Seed crystal bonding furnace and method of operation thereof

Abstract

This invention belongs to the field of silicon carbide single crystal growth, specifically relating to equipment for seed crystal bonding, and more particularly to a seed crystal bonding furnace and its operating method. The seed crystal bonding furnace includes: a furnace body; a bonding fixture; wherein the bonding fixture includes: an inner ring; and an outer ring. A rotating extrusion table is provided at the bottom of the outer ring; a driving unit is used to drive the outer ring to rotate; during seed crystal bonding, the seed crystal rod is inserted into the inner ring by external force and brought into contact with the bonding surface of the seed crystal on the rotating extrusion table. The driving unit drives the outer ring to rotate, thereby causing the seed crystal to rotate through the rotating extrusion table, expelling air bubbles from the adhesive layer on the seed crystal bonding surface. By driving the outer ring to rotate, and thus causing the seed crystal to rotate through the rotating extrusion table, air bubbles in the adhesive layer on the seed crystal bonding surface can be effectively expelled, ensuring an intact bonding interface, improving bonding strength, thereby improving the heat transfer and stability of the seed crystal, and preventing seed crystal detachment during high-temperature growth.

Description

Technical Field

[0001] This invention belongs to the field of silicon carbide single crystal growth, specifically relating to equipment for seed crystal bonding, and more particularly to a seed crystal bonding furnace and its working method. Background Technology

[0002] In the growth of silicon carbide single crystals, the bonding between the seed crystal and the seed crystal rod is one of the key steps. The seed crystal needs to be fixed to the seed crystal rod using an adhesive (such as glue), and the quality of the bonding directly affects the quality of single crystal growth.

[0003] In related technologies, seed crystal bonding typically employs simple bonding fixtures, aligning the seed crystal and seed crystal rod before applying pressure for bonding. However, this bonding method has significant drawbacks: during the bonding process, air bubbles easily remain in the adhesive layer. The presence of these air bubbles leads to an incomplete bonding interface, reducing bond strength and consequently affecting the heat transfer and stability of the seed crystal, potentially causing seed crystal detachment during high-temperature growth.

[0004] Therefore, how to avoid air bubbles in the adhesive layer during seed crystal bonding is a technical problem that urgently needs to be solved.

[0005] It should be noted that the information disclosed in this background section is only for understanding the background technology of the present application concept, and therefore, the above description is not considered to constitute prior art information. Summary of the Invention

[0006] This disclosure provides at least one seed crystal bonding furnace and its operating method.

[0007] In a first aspect, embodiments of this disclosure provide a seed crystal bonding furnace, comprising:

[0008] The furnace body is equipped with a heating tank;

[0009] An adhesive bonding fixture is disposed within the heating tank;

[0010] The bonding fixture includes:

[0011] The inner ring is used for guiding the seed crystal rod;

[0012] An outer ring rotates at the lower end of the inner ring, and a rotating extrusion table is provided at the bottom of the outer ring;

[0013] A drive unit, which is used to drive the outer ring to rotate;

[0014] When bonding the seed crystal, the seed crystal rod is inserted into the inner ring by external force and put into contact with the bonding surface of the seed crystal on the rotating extrusion table. The outer ring is driven to rotate by the drive unit, thereby driving the seed crystal to rotate through the rotating extrusion table, so as to squeeze out the air bubbles in the glue layer on the bonding surface of the seed crystal.

[0015] In one alternative embodiment, the rotary extrusion table includes:

[0016] The base plate is fixedly connected to the bottom of the outer ring, and a rotating shaft is provided on its top.

[0017] A rotating plate has a rotating groove at its bottom, and the rotating plate is rotatably connected to the base plate through the rotation groove and the cooperation of the rotating shaft;

[0018] The side wall of the rotating shaft is provided with an arc-shaped slider;

[0019] An arc-shaped groove is provided at the fitting point between the rotating groove and the arc-shaped slider.

[0020] In one alternative embodiment, the arcuate groove has an arcuate radius between 90 and 270°.

[0021] When the drive unit drives the outer ring to rotate, the rotating extrusion table is divided into two motion states;

[0022] In the first motion state, the arc-shaped slider slides along the arc-shaped groove, thereby driving the rotating extrusion table to rise;

[0023] In the second motion state, the arc-shaped slider slides to the end of the arc-shaped groove, thereby driving the rotating extrusion table to rotate with the outer ring.

[0024] In one alternative embodiment, the diameter of the inner ring is R;

[0025] The diameter of the seed crystal rod is r;

[0026] Where R = r.

[0027] In one optional embodiment, an exhaust port is provided below the sidewall of the inner ring;

[0028] When the seed crystal rod is inserted into the inner ring, the air between the seed crystal bonding surface and the seed crystal rod is vented through the exhaust port.

[0029] In one alternative implementation, the number of exhaust ports is two;

[0030] The two exhaust ports are positioned opposite each other.

[0031] In one optional embodiment, the sidewall of the exhaust port is provided with a buffer.

[0032] The drop of the seed crystal rod is buffered when it is inserted into the inner ring.

[0033] In one alternative implementation, the buffer includes:

[0034] The rotating flap is rotatably positioned inside the exhaust port via a reset torsion spring and a plug rod.

[0035] In the initial state, the rotating flap is horizontally positioned in the inner ring and extends toward the center of the inner ring.

[0036] In one optional embodiment, the sidewall of the exhaust port is provided with a sliding groove;

[0037] A reset spring is provided inside the sliding groove;

[0038] One end of the return spring abuts against the bottom of the sliding groove, and the other end abuts against the insertion rod;

[0039] When the seed crystal rod is inserted into the inner ring, the seed crystal rod drives the flip plate to press down along the sliding groove to complete the initial buffering. When the insertion rod slides to the limit position, the seed crystal rod continues to press down, causing the rotating flip plate to flip and complete the secondary buffering.

[0040] Secondly, this disclosure also provides a working method for a seed crystal bonding furnace as described above, the working method comprising:

[0041] Place the seed crystal coated with glue onto the rotary extrusion table;

[0042] Place the bonding fixture into the heating tank;

[0043] Control the furnace body to heat the heating tank for a preset time;

[0044] The seed crystal rod is inserted into the inner ring by external force and adheres to the bonding surface of the seed crystal;

[0045] The drive unit rotates the outer ring, thereby driving the seed crystal to rotate through the rotating extrusion table, so as to squeeze out the air bubbles in the adhesive layer on the seed crystal bonding surface.

[0046] The beneficial effects of this invention are that the seed crystal bonding furnace and its working method drive the outer ring to rotate through the driving unit, thereby driving the seed crystal to rotate through the rotating extrusion table. This can effectively squeeze out air bubbles in the adhesive layer on the seed crystal bonding surface, ensure the integrity of the bonding interface, improve the bonding strength, thereby improving the heat transfer and stability of the seed crystal, and avoiding seed crystal detachment during high-temperature growth.

[0047] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention are realized and obtained through the structures particularly pointed out in the description and the drawings.

[0048] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0049] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0050] Figure 1 This is a schematic diagram of the structure of the seed crystal bonding furnace provided in an embodiment of the present disclosure;

[0051] Figure 2 This is a schematic diagram of the adhesive tooling provided in the embodiments of this disclosure;

[0052] Figure 3 A cross-sectional view of the bonding fixture provided in an embodiment of this disclosure;

[0053] Figure 4 A cross-sectional view from another perspective of the bonding fixture provided in an embodiment of this disclosure;

[0054] Figure 5 A flowchart illustrating the operation method of the seed crystal bonding furnace provided in this embodiment of the disclosure.

[0055] In the diagram: 100, furnace body; 110, heating tank; 200, bonding fixture; 210, inner ring; 211, exhaust port; 211a, sliding groove; 212, buffer component; 212a, rotating flap; 220, outer ring; 221, rotating extrusion table; 221a, base plate; 221b, rotating plate; 221c, rotating shaft; 221d, rotating groove; 221e, arc-shaped sliding groove; 230, drive unit; 300, seed crystal. Detailed Implementation

[0056] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0057] In this document, when it is mentioned that a first component is located on a second component, this can mean that the first component can be directly formed on the second component, or that a third component can be inserted between the first and second components. Furthermore, in the accompanying drawings, the thickness of the components may be exaggerated or reduced for the purpose of effectively describing the technical content.

[0058] In this document, when an element or layer is referred to as “located,” “joined to,” “connected to,” “attached to,” or “coupled to” another element or layer, it may be directly located, joined, connected, attached to, or coupled to the other element or layer, or there may be intermediate elements or layers present. Conversely, when an element is referred to as “directly on another element or layer,” “directly joined to,” “directly connected to,” “directly attached to,” or “directly coupled to” another element or layer, there may be no intermediate elements or layers present. Other terms used to describe relationships between elements should be interpreted in a similar manner (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.). As used herein, the term “and / or” includes any and all combinations of one or more of the related listed items.

[0059] In this document, exemplary embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. As used herein, expressions such as “at least one of…” modify the entire list of elements when following a list of elements, rather than individual elements in the list. For example, the expression “at least one of a, b, and c” should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0060] The terminology used herein is for the purpose of describing specific exemplary configurations only and is not intended to be limiting. As used herein, the singular articles “a,” “an,” and “the” may also be intended to include plural forms unless otherwise expressly stated herein. The terms “comprising,” “including,” and “having” are inclusive and thus specify the presence of features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein should not be construed as requiring them to be performed in the specific order discussed or shown, unless specifically identified as such. Additional or alternative steps may be employed.

[0061] As used herein, the phrases “in one embodiment,” “according to one embodiment,” “in some embodiments,” etc., generally refer to the fact that a particular feature, structure, or characteristic following the phrase can be included in at least one embodiment of this disclosure. Therefore, a particular feature, structure, or characteristic can be included in more than one embodiment of this disclosure, such that these phrases do not necessarily refer to the same embodiment. As used herein, the terms “example,” “exemplary,” etc., are used to “serve as an example, instance, or illustration.” Any implementation, aspect, or design described herein as “example” or “exemplary” is not necessarily to be construed as preferred or superior to other implementations, aspects, or designs. Rather, the use of the terms “example,” “exemplary,” etc., is intended to present concepts in a specific manner.

[0062] Research has found that seed crystal bonding typically employs simple bonding fixtures, aligning the seed crystal and seed crystal rod before applying pressure for bonding. However, this bonding method has significant drawbacks: during the bonding process, air bubbles easily remain in the adhesive layer. The presence of these air bubbles leads to an incomplete bonding interface, reducing bond strength and consequently affecting the heat transfer and stability of the seed crystal. This can result in seed crystal detachment or growth defects during high-temperature growth.

[0063] Based on the above research, this disclosure provides a seed crystal bonding furnace and its working method. The driving unit 230 drives the outer ring 220 to rotate, thereby driving the seed crystal 300 to rotate through the rotating extrusion table 221. This can effectively squeeze out air bubbles in the adhesive layer on the bonding surface of the seed crystal 300, ensuring the integrity of the bonding interface, improving the bonding strength, thereby improving the heat transfer and stability of the seed crystal 300, and preventing the seed crystal 300 from falling off during high-temperature growth.

[0064] The shortcomings of the above solutions are the result of the inventor's practical experience and careful research. Therefore, the discovery process of the above problems and the solutions proposed in this disclosure should be considered as the inventor's contribution to this disclosure.

[0065] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0066] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0067] Please see Figure 1 and Figure 2 At least one embodiment provides a seed crystal bonding furnace, comprising: a furnace body 100 having a heating groove 110; a bonding fixture 200 disposed within the heating groove 110; wherein the bonding fixture 200 comprises: an inner ring 210 for guiding the seed crystal rod; an outer ring 220 rotatably disposed at the lower end of the inner ring 210, and a rotating extrusion table 221 disposed at the bottom of the outer ring 220; and a driving unit 230 for driving the outer ring 220 to rotate; when bonding the seed crystal 300, the seed crystal rod is inserted into the inner ring 210 by external force and adheres to the bonding surface of the seed crystal 300 on the rotating extrusion table 221, and the outer ring 220 is driven to rotate by the driving unit 230, thereby driving the seed crystal 300 to rotate through the rotating extrusion table 221 to squeeze out air bubbles in the adhesive layer on the bonding surface of the seed crystal 300.

[0068] The drive unit 230 drives the outer ring 220 to rotate, which in turn drives the seed crystal 300 to rotate through the rotating extrusion table 221. This effectively squeezes out air bubbles in the adhesive layer on the bonding surface of the seed crystal 300, ensuring the integrity of the bonding interface, improving the bonding strength, thereby improving the heat transfer and stability of the seed crystal 300, and preventing the seed crystal 300 from falling off during high-temperature growth.

[0069] Please see Figure 2 and Figure 3 The rotating extrusion table 221 includes: a base plate 221a, which is fixedly connected to the bottom of the outer ring 220 and has a rotating shaft 221c on its top; a rotating plate 221b, which has a rotating groove 221d on its bottom and is rotatably connected to the base plate 221a through the cooperation of the rotating groove 221d and the rotating shaft 221c; an arc-shaped slider is provided on the side wall of the rotating shaft 221c; and an arc-shaped groove 221e is provided at the fitting point between the rotating groove 221d and the arc-shaped slider.

[0070] By cooperating with the rotating plate 221b and the base plate 221a, the seed crystal 300 is ensured to rotate evenly during the bonding process, thereby squeezing out air bubbles in the adhesive layer and avoiding local pressure concentration.

[0071] Specifically, the arc of the arc-shaped groove 221e is between 90° and 270°; when the driving unit 230 drives the outer ring 220 to rotate, the rotating extrusion table 221 has two motion states; in the first motion state, the arc-shaped slider slides along the arc-shaped groove 221e, thereby driving the rotating extrusion table 221 to rise (the rising direction is as follows). Figure 3 (As shown in F2); In the second motion state, the arc-shaped slider slides to the end of the arc-shaped groove 221e, thereby driving the rotating extrusion table 221 to rotate with the outer ring 220 (rotation direction as shown in F2). Figure 3 (As shown in F1).

[0072] In the first state, the seed crystal is pre-pressed 300 mm by rising to initially eliminate large air bubbles; in the second state, tiny air bubbles are further extruded by rotation. This process avoids sudden rotational pressure that could cause glue to splatter or distribute unevenly, ensuring smooth and consistent bonding.

[0073] Please see Figure 3 and Figure 4 The inner ring 210 has a diameter of R; the seed crystal rod has a diameter of r; where R = r. The diameter of the inner ring 210 is matched with the diameter of the seed crystal rod, thereby ensuring a tight fit between the seed crystal rod and the inner ring 210, preventing offset or shaking during the insertion process. At the same time, it removes air between the seed crystal rod and the seed crystal 300, reducing the amount of air bubbles trapped during bonding.

[0074] Specifically, an exhaust port 211 is provided on the lower side wall of the inner ring 210; when the seed crystal rod is inserted into the inner ring 210, the air between the bonding surface of the seed crystal 300 and the seed crystal rod is vented through the exhaust port 211. By setting the exhaust port 211, the gas discharge channel is fixed, thereby avoiding disorderly gas movement and reducing the amount of gas retention.

[0075] It should be noted that there are two exhaust ports 211; the two exhaust ports 211 are arranged opposite to each other. The two oppositely arranged exhaust ports 211 achieve balanced exhaust, avoiding pressure unevenness or airflow disturbance that may be caused by exhaust from one side. This ensures the symmetry and thoroughness of the air evacuation process, further reduces dead zones where air bubbles remain, and improves the stability of the overall bonding quality.

[0076] To prevent air bubbles from impacting the adhesive layer during rapid air compression and remaining within it, please refer to... Figure 3 and Figure 4 In a preferred embodiment, a buffer 212 is provided on the side wall of the exhaust port 211; this buffer cushions the fall of the seed crystal rod when it is inserted into the inner ring 210. This slows down the air venting speed, reduces the impact on the adhesive layer, and thus reduces the generation of gas in the adhesive layer. Simultaneously, it alleviates the impact force when the seed crystal rod falls, preventing adhesive splattering due to instantaneous rigid collision.

[0077] Please continue reading. Figure 3 and Figure 4 The buffer 212 includes a rotating flap 212a, which is rotatably disposed in the exhaust port 211 by means of a reset torsion spring and a plug rod; in the initial state, the rotating flap 212a is horizontally disposed in the inner ring 210 and extends toward the middle of the inner ring 210.

[0078] The buffer 212 is a rotating flap 212a with a reset torsion spring. When the seed crystal rod contacts, the rotating flap 212a can move in accordance with its downward pressure to achieve smooth guidance and buffering.

[0079] Please continue reading. Figure 3 and Figure 4 The side wall of the exhaust port 211 is provided with a sliding groove 211a; a return spring is provided in the sliding groove 211a; one end of the return spring abuts against the bottom of the sliding groove 211a, and the other end abuts against the insertion rod; when the seed crystal rod is inserted into the inner ring 210, the seed crystal rod drives the flip plate to press down along the sliding groove 211a to complete the initial buffering, until the insertion rod slides to the limit position, the seed crystal rod continues to press down, driving the rotating flip plate 212a to flip over, completing the secondary buffering.

[0080] The sliding groove 211a and the return spring achieve initial buffering, and the rotating flap 212a and the return torsion spring complete secondary buffering, further slowing down the air discharge speed and preventing the rapid compression of air from causing gas to enter the adhesive layer, thus reducing the generation of gas in the adhesive layer.

[0081] Please see Figure 5 At least one embodiment also provides a method of operation applied to the seed crystal bonding furnace as described above, the method comprising:

[0082] S110: Place the seed crystal 300 coated with glue onto the rotary extrusion table 221.

[0083] S120: Place the bonding fixture 200 into the heating tank 110.

[0084] S130: Controls the furnace body 100 to heat the heating tank 110 for a preset time.

[0085] S140: The seed crystal rod is inserted into the inner ring 210 by external force and is attached to the bonding surface of the seed crystal 300.

[0086] S150: The drive unit 230 rotates and the outer ring 220 rotates, thereby driving the seed crystal 300 to rotate through the rotating extrusion table 221, so as to squeeze out the air bubbles in the adhesive layer on the bonding surface of the seed crystal 300.

[0087] The beneficial effects of this invention are that it provides a seed crystal bonding furnace and its working method. The seed crystal bonding furnace includes: a furnace body 100, which is provided with a heating tank 110; a bonding fixture 200, which is disposed in the heating tank 110; wherein, the bonding fixture 200 includes: an inner ring 210, which is used for guiding the seed crystal rod; an outer ring 220, which rotates at the lower end of the inner ring 210, and a rotating extrusion table 221 is provided at the bottom of the outer ring 220; a driving part 230, which is used to drive the outer ring 220 to rotate; when bonding the seed crystal 300, the seed crystal rod is inserted into the inner ring 210 by external force and puts it into contact with the bonding surface of the seed crystal 300 on the rotating extrusion table 221. The driving part 230 drives the outer ring 220 to rotate, thereby driving the seed crystal 300 to rotate through the rotating extrusion table 221, so as to squeeze out the air bubbles in the adhesive layer on the bonding surface of the seed crystal 300. The drive unit 230 drives the outer ring 220 to rotate, which in turn drives the seed crystal 300 to rotate through the rotating extrusion table 221. This effectively squeezes out air bubbles in the adhesive layer on the bonding surface of the seed crystal 300, ensuring the integrity of the bonding interface, improving the bonding strength, thereby improving the heat transfer and stability of the seed crystal 300, and preventing the seed crystal 300 from falling off during high-temperature growth.

[0088] In the description of the embodiments of the present invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention based on the specific circumstances.

[0089] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence unless expressly indicated herein. Therefore, without departing from the teachings of the exemplary embodiments, the first element, component, region, layer, or segment discussed above may be referred to as a second element, component, region, layer, or segment.

[0090] Spatially relative terms, such as “inside,” “outside,” “below,” “below,” “down,” “above,” “up,” etc., may be used herein to describe the relationship between one element or feature illustrated in the figures and another element or feature. In addition to the orientations depicted in the figures, spatially relative terms may be intended to cover different orientations of the device in use or operation. For example, if the device in the figure is flipped, an element described as “below” or “below” other elements or features would be oriented as “above” other elements or features. Thus, the example term “below” can cover both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0091] In the above discussion, unless otherwise stated, when used to describe numerical values, the terms “about,” “approximately,” “basically,” etc., indicate a change of + / - 10% in that value.

[0092] Based on the above-described preferred embodiments of the present invention, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the inventive concept. The technical scope of this invention is not limited to the contents of the specification, but must be determined according to the scope of the claims.

Claims

1. A seed crystal bonding furnace, characterized in that, include: Furnace body (100), which is provided with heating groove (110); An adhesive bonding fixture (200) is disposed within the heating tank (110); The bonding fixture (200) includes: Inner ring (210), which is used for seed rod guidance; An outer ring (220) rotates at the lower end of the inner ring (210), and a rotating extrusion table (221) is provided at the bottom of the outer ring (220). A drive unit (230) is used to drive the outer ring (220) to rotate; When bonding the seed crystal (300), the seed crystal rod is inserted into the inner ring (210) by external force and is attached to the bonding surface of the seed crystal (300) on the rotary extrusion table (221). The outer ring (220) is driven to rotate by the drive unit (230), thereby driving the seed crystal (300) to rotate through the rotary extrusion table (221) to squeeze out the air bubbles in the adhesive layer on the bonding surface of the seed crystal (300). The diameter of the inner ring (210) is R; The diameter of the seed crystal rod is r; Where R = r; An exhaust port (211) is provided below the side wall of the inner ring (210). When the seed crystal rod is inserted into the inner ring (210), the air between the bonding surface of the seed crystal (300) and the seed crystal rod is vented through the exhaust port (211); The number of exhaust ports (211) is two; The two exhaust ports (211) are arranged opposite each other; The sidewall of the exhaust port (211) is provided with a buffer (212). When the seed crystal rod is inserted into the inner ring (210), the fall of the seed crystal rod is buffered; The buffer (212) includes: The rotating flap (212a) is rotatably disposed inside the exhaust port (211) via a reset torsion spring and a plug rod; In the initial state, the rotating flap (212a) is horizontally positioned in the inner ring (210) and extends toward the center of the inner ring (210); The side wall of the exhaust port (211) is provided with a sliding groove (211a). A return spring is provided inside the sliding groove (211a); One end of the return spring abuts against the bottom of the sliding groove (211a), and the other end abuts against the insertion rod; When the seed crystal rod is inserted into the inner ring (210), the seed crystal rod drives the flip plate to press down along the sliding groove (211a) to complete the initial buffer. When the insertion rod slides to the limit position, the seed crystal rod continues to press down, causing the rotating flip plate (212a) to flip and complete the secondary buffer.

2. The seed crystal bonding furnace as described in claim 1, characterized in that, The rotary extrusion table (221) includes: The base plate (221a) is fixedly connected to the bottom of the outer ring (220), and a rotating shaft (221c) is provided on its top. A rotating plate (221b) has a rotating groove (221d) at its bottom, and the rotating plate (221b) is rotatably connected to the base plate (221a) through the cooperation of the rotating groove (221d) and the rotating shaft (221c); The side wall of the rotating shaft (221c) is provided with an arc-shaped slider; An arc-shaped groove (221e) is provided at the fitting point between the rotating groove (221d) and the arc-shaped slider.

3. The seed crystal bonding furnace as described in claim 2, characterized in that, The arc of the arc-shaped groove (221e) is between 90° and 270°; When the drive unit (230) drives the outer ring (220) to rotate, the rotating extrusion table (221) is divided into two motion states; In the first motion state, the arc-shaped slider slides along the arc-shaped groove (221e), thereby driving the rotary extrusion table (221) to rise; In the second motion state, the arc-shaped slider slides to the end of the arc-shaped groove (221e), thereby driving the rotating extrusion table (221) to rotate with the outer ring (220).

4. A method for operating a seed crystal bonding furnace as described in any one of claims 1-3, characterized in that, The working method includes: Place the seed crystal (300) coated with glue onto the rotary extrusion table (221); Place the bonding fixture (200) into the heating tank (110); The furnace body (100) is controlled to heat the heating tank (110) for a preset time; The seed crystal rod is inserted into the inner ring (210) by external force and is attached to the bonding surface of the seed crystal (300); The drive unit (230) rotates the outer ring (220), thereby driving the seed crystal (300) to rotate through the rotating extrusion table (221) to squeeze out the air bubbles in the adhesive layer on the bonding surface of the seed crystal (300).

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