High-voltage power operational amplifier circuit
By using a hybrid integrated design of a high-voltage power operational amplifier circuit, which utilizes composite Darlington transistors and composite power transistors, clamping diodes and current-limiting resistors to reduce power consumption and compensation capacitors to ensure stability, the problems of insufficient output current, high power consumption and poor stability of traditional high-voltage power operational amplifiers are solved, achieving high-voltage, high-current output and low-cost circuit design.
Patent Information
- Application Number
- CN202511674577.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-14
- Publication Date
- 2026-01-27
AI Technical Summary
Traditional high-voltage power operational amplifiers suffer from problems such as insufficient output current, excessive power consumption under high voltage, severe heat generation, poor stability, and high cost and large size due to reliance on imported components, making it difficult to meet the needs of high-power application scenarios.
It adopts a hybrid integrated design, including an upper power output stage, an intermediate drive stage and a lower power output stage. It utilizes a composite Darlington transistor and a composite power transistor design, combined with clamping diodes and current-limiting resistors to reduce power consumption, uses compensation capacitors to ensure circuit stability, and employs high-voltage Schottky diodes to improve reliability.
It achieves high current output under high voltage, reduces power consumption and heat generation, improves circuit stability and reliability, simplifies circuit structure, reduces cost, and is suitable for high-power applications.
Smart Images
Figure CN121417831A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of power operational amplifier technology, and more specifically to a high-voltage power operational amplifier circuit. Background Technology
[0002] In fields such as industrial control and power electronic conversion, power operational amplifiers (op-amps) need to have high-voltage, high-current output capabilities to drive high-power loads (such as motors and high-voltage actuators). Traditional power op-amps are mostly assembled from imported, one-time integrated silicon chip power amplifiers, resulting in high costs and numerous circuit components. This leads to larger op-amp sizes, poor heat dissipation, and susceptibility to damage. Furthermore, they suffer from insufficient output current, excessive power consumption under high voltage, severe heat generation, and poor stability, making it difficult to meet the stringent requirements of high-power applications.
[0003] Therefore, designing a power operational amplifier circuit that provides high current output under high voltage while also possessing low power consumption and high stability has become a pressing technical problem to be solved in this field. Summary of the Invention
[0004] The high-voltage power operational amplifier circuit proposed in this invention can at least solve one of the technical problems in the background art.
[0005] To achieve the above objectives, the present invention adopts the following technical solution: A high-voltage power operational amplifier circuit includes: an upper power output stage, an intermediate driver stage, a lower power output stage, and an operational amplifier A1; Operational amplifier A1 is connected to the upper power output stage, the intermediate driver stage, and the lower power output stage, respectively. The upper power output stage is connected to the intermediate driver stage, and the intermediate driver stage is connected to the lower power output stage. The output of operational amplifier A1 is connected to one end of compensation capacitor C1, and the other end of energy storage capacitor C1 is grounded. It is also connected to the positive terminal of diode D1 and the negative terminal of diode D2. The negative terminal of diode D1 is connected to the collector of transistor Q3, the positive terminal of diode D2 is connected to the collector of transistor Q4, and the emitter of transistor Q3 is connected to the emitter of transistor Q4. This achieves phase compensation to ensure the high-frequency stability of the circuit, and at the same time provides an amplified drive signal for the intermediate drive stage. The intermediate driving stage consists of transistors Q3 and Q4.
[0006] Furthermore, the upper power output stage of the present invention includes: The base circuit of transistor Q3 is connected to the emitter of transistor Q1B in the upper half-power stage and the current-limiting resistor R1. The other end of the current-limiting resistor R1 is connected to the emitter of transistor Q1A. The base of transistor Q1B is connected to the emitter of transistor Q1A. The collector of transistor Q1B is connected to the collector of transistor Q1A. The base of transistor Q1A is connected to the positive terminal of diode D1.
[0007] Among them, transistors Q1A and Q1B form a composite Darlington transistor.
[0008] Furthermore, the lower power output stage of the present invention includes: The base circuit of transistor Q4 is connected to the emitter of transistor Q6B in the lower half-power stage and the current-limiting resistor R2. The base of transistor Q6B is connected to the emitter of transistor Q6A. The other end of the current-limiting resistor R2 is connected to the emitter of transistor Q6A. The collector of transistor Q6A is connected to the collector of transistor Q6B. The base of transistor Q6A is connected to the cathode of diode D2.
[0009] Among them, transistor Q6A and transistor Q6B form a composite power transistor.
[0010] On the other hand, a power operational amplifier chip is characterized in that the chip includes the operational amplifier circuit as described in any one of claims 1 to 3.
[0011] In summary, by using composite Darlington transistors (Q1A, Q1B) in the upper power output stage and composite power transistors (Q6A, Q6B) in the lower power output stage, the total current amplification factor can reach 5000, enabling stable high-voltage bipolar high-current output. Addressing the issues of excessive power consumption, severe heat generation, and poor heat dissipation common in traditional solutions under high voltage, this invention effectively reduces ineffective power consumption and significantly decreases circuit heat generation through the synergistic cooperation of clamping diodes (D1, D2) and current-limiting resistors (R1, R2). Traditional power operational amplifiers are prone to self-oscillation under high-frequency conditions, and under high-voltage environments... The reliability of traditional circuits is low. This invention compensates for the high-frequency phase shift of the circuit by using a compensation capacitor C1, and uses a high-voltage Schottky diode with a reverse withstand voltage of not less than 600V to prevent transistor breakdown, ensuring that the circuit operates stably over a wide frequency range. Traditional solutions often rely on imported single-chip integrated circuits for assembly, which not only results in a large number of components and a large size, but also leads to high operating costs. This invention adopts a hybrid integrated design, which simplifies the circuit structure and reduces the size, and eliminates the need for imported components, significantly reducing production and operating costs. Overall, it is more suitable for the stringent requirements of high-power applications such as industrial control and power electronic conversion. Attached Figure Description
[0012] Figure 1 This is a schematic diagram of the operational amplifier circuit of the present invention. Detailed Implementation
[0013] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some embodiments of the present invention, but not all embodiments.
[0014] like Figure 1 As shown in this embodiment, a high-voltage power operational amplifier circuit includes: an upper power output stage, an intermediate driver stage, a lower power output stage, and an operational amplifier A1. Operational amplifier unit A1 has two signal input terminals (pins 4 and 5), one signal output terminal, a positive power supply terminal (pin 3), and a negative power supply terminal (pin 6). Energy storage capacitor C1 is connected between the signal output terminal and the negative power supply terminal of the operational amplifier unit A1; The upper power output stage consists of transistors Q1A and Q1B, diodes, and resistors. The anode of the diode is connected to the signal output terminal of the operational amplifier unit A1, and the cathode is connected to the base of Q1A. The collector of Q1A is connected to the positive power supply terminal, and the emitter is connected to the base of Q1B. The emitter of Q1B serves as the upper power output auxiliary terminal (pin 2), and a resistor is connected between its base and emitter. The intermediate driver stage consists of transistors Q3 and Q4. The base of Q3 is connected to the signal output terminal of the operational amplifier unit A1, the collector is connected to the positive power supply terminal, and the emitter is connected to the base of Q4. The collector of Q4 is connected to the power output common terminal (pin 1), and the emitter is connected to the negative power supply terminal. The lower power output stage consists of transistors Q6A and Q6B, a diode, and a resistor. The cathode of the diode is connected to the node between the emitter of Q4 and the negative power supply terminal, and the anode is connected to the base of Q6A. The emitter of Q6A is connected to the negative power supply terminal, and the collector is connected to the base of Q6B. The emitter of Q6B serves as the lower power output auxiliary terminal (pin 8), and a resistor is connected between its base and emitter.
[0015] Operational amplifier A1 is connected to the upper power output stage, the intermediate driver stage, and the lower power output stage. The upper power output stage is connected to the intermediate driver stage, and the intermediate driver stage is connected to the lower power output stage.
[0016] The output of operational amplifier A1 is connected to one end of compensation capacitor C1, and the other end of energy storage capacitor C1 is grounded. It is also connected to the positive terminal of diode D1 and the negative terminal of diode D2. The negative terminal of diode D1 is connected to the collector of transistor Q3, the positive terminal of diode D2 is connected to the collector of transistor Q4, and the emitter of transistor Q3 is connected to the emitter of transistor Q4. This achieves phase compensation to ensure the high-frequency stability of the circuit, and at the same time provides an amplified drive signal for the intermediate drive stage. The intermediate driving stage consists of transistors Q3 and Q4.
[0017] The clamping diodes D1 and D2 are high-voltage Schottky diodes with a reverse withstand voltage of not less than 600V and a forward conduction voltage drop of 0.3V~0.5V. They are used to prevent the base-emitter junction of Q1A and Q6A from breaking down due to excessive reverse voltage.
[0018] The base circuit of transistor Q3 is connected to the emitter of transistor Q1B in the upper half-power stage and the current-limiting resistor R1. The other end of the current-limiting resistor R1 is connected to the emitter of transistor Q1A. The base of transistor Q1B is connected to the emitter of transistor Q1A. The collector of transistor Q1B is connected to the collector of transistor Q1A. The base of transistor Q1A is connected to the positive terminal of diode D1.
[0019] In this configuration, transistors Q1A and Q1B form a composite Darlington transistor. The current amplification factor β1 of transistor Q1A is 50~200, and the current amplification factor β2 of transistor Q1B is 100~500. The total current amplification factor after the composite transistor is β1×β2, thus enhancing the current output capability of the upper power output stage. The emitter of transistor Q1A is led out via current-limiting resistor R1 as pin 2 of the operational amplifier chip.
[0020] The base circuit of transistor Q4 is connected to the emitter of transistor Q6B in the lower half-power stage and the current-limiting resistor R2. The base of transistor Q6B is connected to the emitter of transistor Q6A. The other end of the current-limiting resistor R2 is connected to the emitter of transistor Q6A. The collector of transistor Q6A is connected to the collector of transistor Q6B. The base of transistor Q6A is connected to the cathode of diode D2.
[0021] In this configuration, transistors Q6A and Q6B form a composite power transistor. The current amplification factor β3 of transistor Q6A is 50~200, and the current amplification factor β4 of transistor Q6B is 100~500. The total current amplification factor after combination is β3×β4, thus enhancing the current output capability of the next power output stage. The emitter of transistor Q6B is led out via a resistor as pin 8 of the operational amplifier chip.
[0022] The current-limiting resistors R1 and R2 have resistance values of 10Ω to 100Ω and power ratings of not less than 1W. They are used to limit the base injection current when Q1B and Q6B are turned on, thus preventing overcurrent damage to the transistors.
[0023] The upper half-power stage's Q1A and Q1B, together with the series diode, form a positive-phase high-current output branch, utilizing the current multiplication effect of the Darlington structure to achieve high-current output; the lower half-power stage's Q6A and Q6B, together with the series resistor, form an anti-phase high-current output branch, symmetrical to the positive-phase branch, achieving bipolar high-voltage high-current output; the compensation capacitor C1 is used to cancel the high-frequency phase shift of the circuit, prevent self-excited oscillation, and ensure the stability of the circuit over a wide frequency range.
[0024] Traditional power operational amplifier integrated circuits operate at a power supply voltage of ±15V and have an output current of 50mA to 500mA. This invention, after testing, can operate stably at a power supply voltage of ±20V and an output current of 10A, with an operating temperature below 60℃.
[0025] Compared with traditional power operational amplifiers, this invention offers comprehensive advantages in core performance and practicality: Traditional power operational amplifiers generally suffer from insufficient output current, especially under high-voltage conditions, making it difficult to meet the driving requirements of high-power loads such as motors and high-voltage actuators. This invention, through the design of composite Darlington transistors (Q1A, Q1B) in the upper power output stage and composite power transistors (Q6A, Q6B) in the lower power output stage, achieves a total current amplification factor of up to 5000, stably realizing high-voltage bipolar high-current output. Traditional solutions suffer from excessive power consumption under high voltage, often resulting in severe heat generation and poor heat dissipation. This invention, through the synergistic cooperation of clamping diodes (D1, D2) and current-limiting resistors (R1, R2), effectively… This invention reduces ineffective power consumption and significantly reduces circuit heat generation. Traditional power operational amplifiers are prone to self-oscillation under high-frequency conditions and have low reliability under high-voltage environments. This invention uses a compensation capacitor C1 to cancel the high-frequency phase shift of the circuit, and a high-voltage Schottky diode with a reverse withstand voltage of not less than 600V to prevent transistor breakdown, ensuring stable operation of the circuit over a wide frequency range. Traditional solutions often rely on imported single-chip integrated circuits for assembly, which not only results in a large number of components and large size, but also leads to high operating costs. This invention adopts a hybrid integrated design, which simplifies the circuit structure and reduces the size, and eliminates the need for imported components, greatly reducing production and operating costs. Overall, it is more suitable for the stringent requirements of high-power applications such as industrial control and power electronic conversion.
[0026] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0027] The various embodiments in this specification are described in a related manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.
[0028] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims
1. A high-voltage power operational amplifier circuit, characterized in that, include: Upper power output stage, intermediate driver stage, lower power output stage, operational amplifier A1; Operational amplifier A1 is connected to the upper power output stage, the intermediate driver stage, and the lower power output stage, respectively. The upper power output stage is connected to the intermediate driver stage, and the intermediate driver stage is connected to the lower power output stage. The output of operational amplifier A1 is connected to one end of compensation capacitor C1, and the other end of energy storage capacitor C1 is grounded. It is also connected to the positive terminal of diode D1 and the negative terminal of diode D2. The negative terminal of diode D1 is connected to the collector of transistor Q3, the positive terminal of diode D2 is connected to the collector of transistor Q4, and the emitter of transistor Q3 is connected to the emitter of transistor Q4. This achieves phase compensation to ensure the high-frequency stability of the circuit, and at the same time provides an amplified drive signal for the intermediate drive stage. The intermediate driving stage consists of transistors Q3 and Q4.
2. The power operational amplifier circuit according to claim 1, characterized in that, The upper power output stage includes: The base circuit of transistor Q3 is connected to the emitter of transistor Q1B in the upper half-power stage and the current-limiting resistor R1. The other end of the current-limiting resistor R1 is connected to the emitter of transistor Q1A. The base of transistor Q1B is connected to the emitter of transistor Q1A. The collector of transistor Q1B is connected to the collector of transistor Q1A. The base of transistor Q1A is connected to the positive terminal of diode D1. Among them, transistors Q1A and Q1B form a composite Darlington transistor.
3. The power operational amplifier circuit according to claim 1, characterized in that, The lower power output stage includes: The base circuit of transistor Q4 is connected to the emitter of transistor Q6B in the lower half-power stage and the current-limiting resistor R2. The base of transistor Q6B is connected to the emitter of transistor Q6A. The other end of the current-limiting resistor R2 is connected to the emitter of transistor Q6A. The collector of transistor Q6A is connected to the collector of transistor Q6B. The base of transistor Q6A is connected to the cathode of diode D2. Among them, transistor Q6A and transistor Q6B form a composite power transistor.