Light-emitting substrate and light-emitting device

Abstract

The embodiment of the invention provides a light-emitting substrate and a light-emitting device, relates to the technical field of display, and is used for improving the electrical performance and the optical performance of the light-emitting device at the same time. The light-emitting substrate comprises a substrate and a plurality of light-emitting devices, the light-emitting devices are located on one side of the substrate, each light-emitting device comprises a first electrode, a light-emitting layer and a second electrode which are stacked, and the first electrode is closer to the substrate than the second electrode; the first electrode comprises a reflecting electrode, and the second electrode comprises a transparent electrode; wherein at least one light-emitting device comprises an optical adjustment structure, the optical adjustment structure comprises an optical adjustment layer and a transparent reflection layer, the optical adjustment layer is located on the side, away from the substrate, of the second electrode, and the transparent reflection layer is located on the side, away from the substrate, of the optical adjustment layer; the conductivity of the optical regulation and control layer is smaller than that of the transparent reflection layer, and the thickness of the optical regulation and control layer is different from that of the transparent reflection layer. The light-emitting substrate is used for displaying images.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of display, and in particular, to a light-emitting substrate and a light-emitting device. BACKGROUND

[0002] Quantum dots (QDs) as a new type of light-emitting material have the advantages of high light color purity, high light-emitting quantum efficiency, adjustable light-emitting color, long service life, etc., and have become a research hotspot of new LED (Light Emitting Diode) light-emitting materials. Therefore, Quantum Dot Light Emitting Diodes (QLED) using quantum dot materials as light-emitting layers have become the main direction of research of new display devices. SUMMARY

[0003] Embodiments of the present disclosure aim to provide a light-emitting substrate and a light-emitting device for simultaneously improving the electrical and optical performance of the light-emitting device.

[0004] To achieve the above-mentioned purpose, embodiments of the present disclosure provide the following technical solutions:

[0005] In one aspect, a light-emitting substrate is provided, which comprises a substrate and a plurality of light-emitting devices, the plurality of light-emitting devices being located on one side of the substrate, each of the light-emitting devices comprising a first electrode, a light-emitting layer and a second electrode stacked in sequence, the first electrode being closer to the substrate than the second electrode; the first electrode comprises a reflective electrode, and the second electrode comprises a transparent electrode; wherein at least one of the light-emitting devices comprises an optical adjustment structure, the optical adjustment structure comprising an optical adjustment layer and a transparent reflective layer, the optical adjustment layer being located on a side of the second electrode away from the substrate, and the transparent reflective layer being located on a side of the optical adjustment layer away from the substrate; the electrical conductivity of the optical adjustment layer is less than that of the transparent reflective layer, and the thickness of the optical adjustment layer is different from that of the transparent reflective layer.

[0006] In the above light-emitting substrate, the transparent reflective layer is provided, so that the first electrode and the transparent reflective layer form a strong microcavity effect, the light-emitting layer is located between the transparent reflective layer and the first electrode, i.e. the light-emitting layer is located in the microcavity, and the intensity of light of a certain wavelength emitted by the light-emitting layer will be increased due to the microcavity effect, so as to improve the light-emitting efficiency of the light-emitting device.

[0007] Further, the cavity length of the microcavity can be adjusted by adjusting the thickness of the optical regulation layer, and since the optical regulation layer is located between the transparent reflective layer and the second electrode, the arrangement of the optical regulation layer does not affect the electrical performance of the light-emitting device. After the thicknesses of the film layers between the first electrode and the second electrode are adjusted to optimize the electrical performance of the light-emitting device, the thickness of the optical regulation layer can be adjusted to optimize the optical performance of the light-emitting device. Therefore, the embodiments of the present disclosure achieve the purpose of adjusting the optical performance and the electrical performance of the light-emitting device separately by arranging the optical regulation structure on the side of the second electrode away from the substrate, so that the light-emitting device has better electrical performance and optical performance.

[0008] In some embodiments, the light transmittance of the optical regulation layer is greater than or equal to the light transmittance of the transparent reflective layer, and the light transmittance of the optical regulation layer ranges from greater than or equal to 90%.

[0009] In some embodiments, the extinction coefficient of the optical regulation layer ranges from 0.001 m -1 to 0.005 m -1 .

[0010] In some embodiments, the material of the optical regulation layer is selected from at least one of 4,4,4,-tris(carbazole-9-yl)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, 4,4'-bis(9-carbazole)biphenyl, silicon oxide, silicon nitride, and silicon oxynitride.

[0011] In some embodiments, the plurality of light-emitting devices includes a first light-emitting device configured to emit first color light, and the optical regulation layer includes a first regulation portion arranged corresponding to the first light-emitting device, wherein the thickness of the first regulation portion ranges from 55 nm to 65 nm.

[0012] In some embodiments, the light-emitting substrate further includes a light extraction layer located on the side of the transparent reflective layer away from the substrate, and the light extraction layer includes a first light extraction portion arranged corresponding to the first light-emitting device, wherein the thickness of the first light extraction portion ranges from 85 nm to 115 nm.

[0013] In some embodiments, the first light-emitting device further includes a first hole transport layer, and the first hole transport layer is located between the first electrode and the light-emitting layer of the first light-emitting device, or the first hole transport layer is located between the light-emitting layer and the second electrode of the first light-emitting device, wherein the thickness of the first hole transport layer ranges from 20 nm to 30 nm.

[0014] In some embodiments, the first light-emitting device further comprises: a first electron transport layer; the first electron transport layer is located between the first electrode of the first light-emitting device and the light-emitting layer of the first light-emitting device, or the first electron transport layer is located between the light-emitting layer of the first light-emitting device and the second electrode of the first light-emitting device; wherein the thickness of the first electron transport layer ranges from 30 nm to 70 nm.

[0015] In some embodiments, the first light-emitting device further comprises: a first hole transport layer and a first electron transport layer; the first electrode of the first light-emitting device, the first hole transport layer, the light-emitting layer of the first light-emitting device, the first electron transport layer and the second electrode of the first light-emitting device are arranged in a direction away from the substrate; or, the first electrode of the first light-emitting device, the first electron transport layer, the light-emitting layer of the first light-emitting device, the first hole transport layer and the second electrode of the first light-emitting device are arranged in a direction away from the substrate; wherein the thickness of the first hole transport layer ranges from 20 nm to 30 nm; the thickness of the first electron transport layer ranges from 30 nm to 70 nm.

[0016] In some embodiments, the plurality of light-emitting devices comprises: a second light-emitting device configured to emit second color light; the optical regulation layer comprises: a second regulation part arranged corresponding to the second light-emitting device; wherein the thickness of the second regulation part ranges from 95 nm to 115 nm.

[0017] In some embodiments, the light-emitting substrate further comprises: a light extraction layer; the light extraction layer comprises: a second light extraction part arranged corresponding to the second light-emitting device; wherein the thickness of the second light extraction part ranges from 105 nm to 145 nm.

[0018] In some embodiments, the second light-emitting device further comprises: a second hole transport layer; the second hole transport layer is located between the first electrode of the second light-emitting device and the light-emitting layer of the second light-emitting device, or the second hole transport layer is located between the light-emitting layer of the second light-emitting device and the second electrode of the second light-emitting device; wherein the thickness of the second hole transport layer ranges from 20 nm to 30 nm.

[0019] In some embodiments, the second light-emitting device further comprises: a second electron transport layer; the second electron transport layer is located between the first electrode of the second light-emitting device and the light-emitting layer of the second light-emitting device, or the second electron transport layer is located between the light-emitting layer of the second light-emitting device and the second electrode of the second light-emitting device; wherein the thickness of the second electron transport layer ranges from 30 nm to 70 nm.

[0020] In some embodiments, the second light-emitting device further comprises a second hole transport layer and a second electron transport layer; the first electrode of the second light-emitting device, the second hole transport layer, the light-emitting layer of the second light-emitting device, the second electron transport layer, and the second electrode of the second light-emitting device are arranged in a direction away from the substrate; or, the first electrode of the second light-emitting device, the second electron transport layer, the light-emitting layer of the second light-emitting device, the second hole transport layer, and the second electrode of the second light-emitting device are arranged in a direction away from the substrate; wherein the thickness of the second hole transport layer ranges from 20 nm to 30 nm; and the thickness of the second electron transport layer ranges from 30 nm to 70 nm.

[0021] In some embodiments, the plurality of light-emitting devices comprises a third light-emitting device configured to emit light of a third color; and the optical regulation layer comprises a third regulation portion arranged corresponding to the third light-emitting device; wherein the thickness of the third regulation portion ranges from 5 nm to 15 nm.

[0022] In some embodiments, the light-emitting substrate further comprises a light extraction layer; and the light extraction layer comprises a third light extraction portion arranged corresponding to the third light-emitting device; wherein the thickness of the third light extraction portion ranges from 55 nm to 85 nm.

[0023] In some embodiments, the third light-emitting device further comprises a third hole transport layer; the third hole transport layer is located between the first electrode of the third light-emitting device and the light-emitting layer of the third light-emitting device; or, the third hole transport layer is located between the light-emitting layer of the third light-emitting device and the second electrode of the third light-emitting device; wherein the thickness of the third hole transport layer ranges from 20 nm to 40 nm.

[0024] In some embodiments, the third light-emitting device further comprises a third electron transport layer; the third electron transport layer is located between the first electrode of the third light-emitting device and the light-emitting layer of the third light-emitting device; or, the third electron transport layer is located between the light-emitting layer of the third light-emitting device and the second electrode of the third light-emitting device; wherein the thickness of the third electron transport layer ranges from 40 nm to 80 nm.

[0025] In some embodiments, the third light-emitting device further comprises a third hole transport layer and a third electron transport layer; the first electrode of the third light-emitting device, the third hole transport layer, the light-emitting layer of the third light-emitting device, the third electron transport layer and the second electrode of the third light-emitting device are arranged in a direction away from the substrate; or, the first electrode of the third light-emitting device, the third electron transport layer, the light-emitting layer of the third light-emitting device, the third hole transport layer and the second electrode of the third light-emitting device are arranged in a direction away from the substrate; wherein the thickness of the third hole transport layer ranges from 20 nm to 40 nm; the thickness of the third electron transport layer ranges from 40 nm to 80 nm.

[0026] In some embodiments, the light transmittance of the transparent reflective layer ranges from greater than or equal to 60% to less than or equal to 90%; and / or, the light transmittance of the second electrode ranges from greater than or equal to 85% in the wavelength range of 400 nm to 700 nm.

[0027] In some embodiments, the material of the transparent reflective layer and the material of the second electrode are independently selected from at least one of gold, silver, magnesium-silver alloy, molybdenum oxide, indium tin oxide, indium zinc oxide, indium tin zinc oxide, indium gallium oxide and aluminum-doped zinc oxide.

[0028] In another aspect, a light-emitting device is provided. The light-emitting device comprises the light-emitting substrate as described in any of the above embodiments. The light-emitting device further comprises a driving chip for driving the light-emitting substrate to emit light.

[0029] The light-emitting device has the same structure and beneficial technical effects as the light-emitting substrate provided in some embodiments described above, and thus will not be described again here. BRIEF DESCRIPTION OF DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the present disclosure, the drawings needed to be used in some embodiments of the present disclosure will be briefly introduced as follows. Obviously, the drawings in the following description are only the drawings of some embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limited to the actual size, actual process, etc. of the products involved in the embodiments of the present disclosure.

[0031] Figure 1 Structure diagram of the light-emitting device according to some embodiments of the present disclosure;

[0032] Figure 2 Structure diagram of the light-emitting substrate according to some embodiments of the present disclosure;

[0033] Figure 3Light path diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0034] Figure 4 Light emission brightness diagram of a light emitting device according to some embodiments of the present disclosure;

[0035] Figure 5 Front surface current efficiency and voltage relationship diagram of a light emitting device according to some embodiments of the present disclosure;

[0036] Figure 6 External quantum efficiency and voltage relationship diagram of a light emitting device according to some embodiments of the present disclosure;

[0037] Figure 7 Light emission angle distribution diagram of a light emitting device according to example 1 of the present disclosure;

[0038] Figure 8 Light emission angle distribution diagram of a light emitting device according to example 2 of the present disclosure;

[0039] Figure 9 Light emission brightness and voltage relationship diagram of a light emitting device according to some embodiments of the present disclosure;

[0040] Figure 10 Light emission angle distribution diagram of a light emitting device according to example 3 of the present disclosure;

[0041] Figure 11 Light emission brightness and voltage relationship diagram of a light emitting device according to example 3 of the present disclosure;

[0042] Figure 12 External quantum efficiency and voltage relationship diagram of a light emitting device according to example 3 of the present disclosure;

[0043] Figure 13 Another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0044] Figure 14 Another light path diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0045] Figure 15 Light emission brightness diagram of a first light emitting device according to some embodiments of the present disclosure;

[0046] Figure 16 Yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0047] Figure 17 Yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0048] Figure 18 Yet another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0049] Figure 19 Another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0050] Figure 20 Another structure diagram of a light emitting substrate according to some embodiments of the present disclosure;

[0051] Figure 21 Light emitting brightness diagram of a second light emitting device according to some embodiments of the present disclosure;

[0052] Figure 22 Light emitting brightness diagram of a third light emitting device according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0053] The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings. Obviously, the described embodiments are only some of the embodiments of the present disclosure, but not all of the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by those of ordinary skill in the art are within the scope of protection of the present disclosure.

[0054] Unless otherwise required by context, the term “comprise” and other forms of the term “comprise”, such as “comprises” and “comprising”, and the like, are used in an open, inclusive sense, i.e., “including, but not limited to”, throughout the specification and claims. The terms “one embodiment”, “some embodiments”, “exemplary embodiments”, “example”, “specific example” or “some examples” as may be present in the specification are not necessarily to be construed as specific or limiting to the embodiments or examples described in which they are used. The terms “one embodiment”, “some embodiments”, “exemplary embodiments”, “example”, “specific example” or “some examples” as may be present in the specification are not necessarily to be construed as specific or limiting to the embodiments or examples described in which they are used. The specific features, structures, materials or characteristics described in the specification are to be construed as illustrative only and are not necessarily to be construed as essential or limiting to the embodiments or examples described in which they are used.

[0055] Hereinafter, the terms “first” and “second” are used only for the purpose of description, and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with “first” and “second” can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, the meaning of “a plurality of” is two or more, unless otherwise specified.

[0056] In describing some embodiments, "coupled" and "connected," along with their derivatives, can be used. It should be understood that these terms are not intended as synonyms for each other. Rather, "connected" can be used to indicate that two or more elements are in direct physical or electrical contact with each other. "Coupled" can be used to indicate that two or more elements are in either physical or electrical contact with each other, even at a distance. As will be apparent, "a" or "an" can be used herein to refer to one or more than one (i.e., to "one or more") of the referenced material or object. The disclosure presented herein is not intended to be limited to the particular embodiments described.

[0057] "at least one of A, B, and C" has the same meaning as "at least one of A, B, or C" and includes the following combinations: only A, only B, only C, A and B, A and C, B and C, and A and B and C.

[0058] "A and / or B" includes the following three combinations: only A, only B, and A and B.

[0059] As used herein, "about," "approximately," or "around" includes the recited value and the average value within an acceptable range of deviation from the recited value, as determined by one of ordinary skill in the art considering the measurement in question and the error in measuring the particular quantity (i.e., the limitations of the measurement system).

[0060] As used herein, "parallel," "perpendicular," and "equal" include the recited condition and conditions that approximate the recited condition, the approximation being within an acceptable range of deviation, as determined by one of ordinary skill in the art considering the measurement in question and the error in measuring the particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallel and near parallel, where near parallel can be within an acceptable deviation range of, for example, 5°; "perpendicular" includes absolute perpendicular and near perpendicular, where near perpendicular can also be within an acceptable deviation range of, for example, 5°. "Equal" includes absolute equality and near equality, where near equality can be within an acceptable deviation range of, for example, less than or equal to 5% of either of the two quantities being compared.

[0061] It will be understood that when a layer or element is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate or intervening layers can also be present.

[0062] Exemplary embodiments are described herein with reference to cross-sectional and / or plan view illustrations that are schematic illustrations of idealized embodiments. Variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated as a rectangle will, typically, have rounded or curved features. Thus, the regions illustrated in the figures are schematic and their shapes are not intended to illustrate the precise shape of a region that would be formed by a given manufacturing technique. The purpose of such illustrations is to more effectively convey specified information from drawing to viewer.

[0063] As Figure 1 illustrated, some embodiments of the present disclosure provide a light emitting device 1000, which can be any device that displays whether it is in motion (e.g., a video) or stationary (e.g., a still image) and whether it is in text or image. More specifically, it is contemplated that the embodiments can be implemented in or in association with a variety of electronic devices such as, but not limited to, a mobile phone (e.g., a cell phone), a wireless device, a personal data assistant (PDA), a handheld or portable computer, a GPS receiver / navigator, a camera, an MP4 video player, a camcorder, a game console, a watch, a clock, a calculator, a television monitor, a flat panel display, a computer monitor, an automobile display (e.g., an odometer display, etc.), a navigation instrument, a cockpit controller and / or display, a display of a camera view (e.g., a display of a rear view camera in a vehicle), an electronic photograph, an electronic billboard or sign, a projector, an architectural structure, a package and an aesthetic structure (e.g., a display of an image for a piece of jewelry), etc. Figure 1 The light emitting device 1000 is exemplified as a cell phone in the following description.

[0064] Exemplarily, the light emitting device 1000 can be an electroluminescent display device or a photoluminescent display device. In the case that the light emitting device 1000 is an electroluminescent display device, the electroluminescent display device can be an organic electroluminescent display device (OLED) or a quantum dot electroluminescent display device (QLED). In the following, some embodiments of the present disclosure are exemplarily described with the light emitting device 1000 as a QLED display device, but the embodiments of the present disclosure include but are not limited to this, and any other display device can also be considered as long as the same technical idea is applied.

[0065] Please continue to refer to Figure 1 The light emitting device 1000 described above includes a light emitting substrate 100.

[0066] In some embodiments, such as Figure 2 As shown, the light-emitting substrate 100 includes a substrate 11 and a plurality of light-emitting devices 10 located on one side of the substrate 11. Each of the plurality of light-emitting devices 10 includes a first electrode 12, a light-emitting layer 15 and a second electrode 17 stacked together. The first electrode 12 is closer to the substrate 11 than the second electrode 17.

[0067] For example, such as Figure 2 As shown, the light-emitting substrate 100 also includes a pixel defining layer 20, on which a plurality of openings K are provided, and a plurality of light-emitting devices 10 are disposed in the plurality of openings K in a corresponding manner.

[0068] For example, the plurality of light-emitting devices 10 include: a first light-emitting device 101, a second light-emitting device 102 and a third light-emitting device 103. For example, the first light-emitting device 101 is used to emit any one of red light, green light and blue light, the second light-emitting device 102 is used to emit another one of red light, green light and blue light, and the third light-emitting device 103 is used to emit the last one of red light, green light and blue light.

[0069] For example, the first electrode 12 is one of the anode and the cathode, and the second electrode 17 is the other of the anode and the cathode.

[0070] In some embodiments, such as Figure 2 As shown, the light-emitting substrate 100 further includes a pixel driving circuit (not shown in the figure) located between the substrate 11 and the plurality of light-emitting devices 10. The pixel driving circuit is used to provide electrical signals to the plurality of light-emitting devices 10 to drive the light-emitting devices 10 to emit light.

[0071] The light-emitting principle of the light-emitting device 10 is as follows: through the circuit connecting the anode and the cathode, holes are injected into the light-emitting layer 15 by the anode and electrons are injected into the light-emitting layer 15 by the cathode. The electrons and holes formed form excitons in the light-emitting layer 15. The excitons return to the ground state through radiative transition and emit photons.

[0072] In some embodiments, such as Figure 3 As shown, taking the first electrode 12 as the anode and the second electrode 17 as the cathode as an example, the light-emitting device 10 further includes: a hole injection layer 13 and a hole transport layer 14 located between the first electrode 12 and the light-emitting layer 15. The hole injection layer 13 and the hole transport layer 14 are arranged in a direction away from the substrate 11. The light-emitting device 10 further includes: an electron transport layer 16 located between the light-emitting layer 15 and the second electrode 17.

[0073] The arrangement of the hole injection layer 13 and the hole transport layer 14 can improve the hole transport efficiency of the light-emitting device 10, and the arrangement of the electron transport layer 16 can improve the electron transport efficiency of the light-emitting device 10, so as to improve the rate of forming excitons in the light-emitting layer 15 by the electrons and the holes, thereby improving the light-emitting efficiency of the light-emitting device 10.

[0074] For example, the second electrode 17 is provided with a light extraction layer 18 away from the substrate 11. For example, the refractive index of the light extraction layer 18 is less than the refractive index of the second electrode 17 and greater than the refractive index of air, so that due to the influence of the refractive index, the arrangement of the light extraction layer 18 can reduce the total reflection of light at the film layer interface, so as to improve the light extraction efficiency of the light-emitting device 10.

[0075] The light-emitting device 10 can be divided into a top-emitting light-emitting device and a bottom-emitting light-emitting device. For example, the first electrode 12 can be arranged as a transparent electrode, and the second electrode 17 can be arranged as a reflective electrode; or the first electrode 12 can be arranged as a reflective electrode, and the second electrode 17 can be arranged as a transparent electrode. The difference between the two is whether the light-emitting direction of the light-emitting device 10 is through the substrate 11 or away from the substrate 11.

[0076] Since the top-emitting light-emitting device emits light from the top, it is not necessary to avoid the metal wiring of the thin film transistor (TFT) array for forming the pixel driving circuit at the bottom, so that the pixel design of the top-emitting light-emitting device is more flexible, and has a higher aperture ratio than the bottom-emitting light-emitting device. Therefore, the embodiments of the present disclosure take the light-emitting device 10 as an example for the top-emitting light-emitting device.

[0077] However, in the top-emitting light-emitting device, it is a difficult problem that the thicknesses of the functional layers of the light-emitting device 10 simultaneously satisfy the relatively optimal electrical performance and the relatively optimal optical performance of the light-emitting device 10. For example, when the thicknesses of the functional layers of the light-emitting device 10 satisfy the relatively optimal electrical performance of the light-emitting device 10, at this time, the carrier (electron and hole) transport of the light-emitting device 10 is relatively balanced, but the side light emission of the light-emitting device 10 is strong, resulting in the relatively poor optical performance of the light-emitting device 10. When the thicknesses of the functional layers of the light-emitting device 10 satisfy the relatively optimal optical performance of the light-emitting device 10, at this time, the front light emission of the light-emitting device 10 is relatively strong, but the carrier injection of the light-emitting device 10 is unbalanced, resulting in the relatively poor electrical performance of the light-emitting device 10.

[0078] It should be noted that the electrical performance of the light emitting device 10 is better, and the external quantum efficiency of the light emitting device 10 is higher, wherein the external quantum efficiency (External Quantum Efficiency, EQE) refers to the efficiency of the light generated in the light emitting layer 15 being extracted to the outside of the light emitting device 10. The optical performance of the light emitting device 10 is better, and the front surface current efficiency of the light emitting device 10 is higher. The front surface current efficiency refers to the ratio of the light extraction efficiency and the current of the front surface of the light emitting device 10.

[0079] As shown in FIG. 1, the front surface light emission refers to the angle between the light and the first direction Y being about 0°, and the first direction Y is the direction perpendicular to the substrate 11; the side surface light emission refers to the light other than the front surface light emission. Figure 3

[0080] The following examples are provided regarding the relationship between the thickness of each functional layer of the light emitting device 10 and the electrical performance and the optical performance of the light emitting device 10.

[0081] In some examples, as shown in FIG. 1, the first electrode 12 is a reflective electrode, and the second electrode 17 is a semi-transparent and semi-reflective electrode. Figure 3

[0082] It should be noted that the reflective electrode is used to reflect the light incident on the electrode, and the material of the first electrode 12 is, for example, metal, and the first electrode 12 can be a single-layer structure or a stacked structure. For example, the reflectivity of the reflective electrode is greater than 90%. The semi-transparent and semi-reflective electrode is used to reflect part of the light incident on the electrode and also to transmit part of the light incident on the electrode.

[0083] In the light emitting device 10, the first electrode 12 and the second electrode 17 form a microcavity (also referred to as a resonant cavity), and the light emitting layer 15 is located between the first electrode 12 and the second electrode 17, i.e., the light emitting layer 15 is located in the microcavity. The intensity of light of a certain wavelength emitted by the light emitting layer 15 is increased, and the spectrum of light of a certain wavelength is narrowed. The microcavity can make most of the light emitted by the light emitting layer 15 exit through the second electrode 17, thereby improving the light emitting efficiency of the light emitting device 10.

[0084] That is, the light emitting device 10 has a microcavity effect. Specifically, the microcavity effect mainly refers to the optical interference inside the light emitting device 10. The light is reflected back and forth inside the light emitting device 10, and only light of a certain wavelength can exit to the outside of the light emitting device 10. Moreover, when the light emitting layer 15 of the light emitting device 10 is located in a microcavity formed by a reflective electrode and a semi-transparent and semi-reflective electrode, and the microcavity length and the wavelength of the light are in the same order of magnitude, light of a certain wavelength is selected and strengthened, and the spectrum is narrowed.

[0085] ​​The microcavity cavity length refers to the dimension dl of the microcavity structure in the first direction Y, and can also be understood as the spacing between the first electrode 12 and the second electrode 17. The first direction Y is a direction perpendicular to the substrate 11.

[0086] In the top-emitting light-emitting device, Fabry-Perot interference occurs between the first electrode 12 and the second electrode 17. Fabry-Perot interference is mainly divided into two mechanisms. First, the interference between the emitted light L1 directly emitted from the light-emitting layer 15 and the reflected light L2 from the first electrode 12 is wide-angle interference. Second, the mutual interference between multiple reflected lights L2 is multi-beam interference.

[0087] Furthermore, electromagnetic waves at the dielectric-metal interface L3 are absorbed, and a phase shift occurs when light is reflected at the first electrode 12 formed of a metal material. Therefore, the microcavity cavity length of the top-emitting light-emitting device must be determined considering the difference in optical path length and phase shift between beams at the dielectric-metal interface L3. The phase shift refers to the phase difference between the output sine wave and the input sine wave signal.

[0088] The following provides calculation formulas for the wide-angle interference and multi-beam interference present in the light-emitting device 10.

[0089]

[0090] Formula (1) is wide-angle interference, and formula (2) is multi-beam interference. λ refers to the emission wavelength of the light emitted from the light-emitting layer 15, i represents the film layer between the first electrode 12 and the second electrode 17, and θ is the incident angle of the light at one film layer.

[0091] Formula (1) is used to introduce the mutual interference between the emitted light L1 and the reflected light L2, n i (λ) refers to the refractive index of each film layer between the light-emitting layer 15 and the first electrode 12; d i is the dimension between the light-emitting layer 15 and the first electrode 12 in the first direction Y; is the phase shift of the light reflected by the first electrode 12.

[0092] Formula (2) is used to introduce the mutual interference between multiple reflected lights L2. Within the microcavity structure formed by the first electrode 12 and the second electrode 17, n i (λ) refers to the refractive index of each film layer within the microcavity structure, d i is the thickness of each film layer; is the phase shift of the light reflected by the first electrode 12, is the phase shift of the light reflected by the second electrode 17.

[0093] m refers to the order of resonance, when m = 1, it is referred to as a first-order microcavity cavity length; when m = 2, it is referred to as a second-order microcavity cavity length; when m = 3, it is referred to as a third-order microcavity cavity length. The related parameters of the light emitting device 10 can be brought into the formula to calculate the value of m, and the obtained m is the order of resonance of the light emitting device 10. Moreover, the thickness of each film layer in the microcavity increases, and the value of m increases.

[0094] In the bottom emission type light emitting device, the multi-beam interference is less, because the emitted light of the light emitting layer 15 is rarely reflected back to the second electrode 17 from the first electrode 12 with high transmittance. In the bottom emission type light emitting device, the multi-beam interference is weak, and the multi-beam interference plays a major role in enhancing the light out of the microcavity structure, so that the microcavity effect in the bottom emission type light emitting device is weak.

[0095] In the top emission type light emitting device structure, both the above wide-angle interference and the multi-beam interference exist, and by properly adjusting the thickness and refractive index of each film layer, the microcavity resonance can be optimized. Therefore, the microcavity structure of the top emission type light emitting device can narrow the light emitting spectrum of the light emitting device 10, so that the red, green and blue colors are purer, thereby improving the purity of the light color and the light extraction efficiency of the light emitting device 10, so as to make the color gamut displayed by the light emitting device 1000 wider. Moreover, the top emission type light emitting device can adjust the angular distribution of the light out, enhance the front light out effect, and is beneficial to reduce the power consumption of small and medium size display applications.

[0096] The optical and electrical properties of the light emitting device 10 as shown in Figure 3 will be introduced below.

[0097] In some embodiments, as shown in Figure 3 , the light emitting device 10 is configured to emit green light, and the SETFOS simulation software is used to simulate the influence of different thicknesses of the hole transport layer 14 and the electron transport layer 16 on the light out effect of the light emitting device 10.

[0098] For example, the structure of the light emitting device 10 is represented as: the first electrode 12 (ITO / Ag / ITO, 7nm / 100nm / 7nm) / hole injection layer 13 (PEDOT, 25nm) / hole transport layer 14 (PF8Cz, xnm) / light emitting layer 15 (QD, 20nm) / electron transport layer 16 (ZnMgO, ynm) / second electrode 17 (Mg:Ag, 10nm) / light extraction layer (60nm).

[0099] The light emitting device 10 is located on one side of the substrate 11, for example, the thickness of the substrate 11 is 0.5mm.

[0100] It should be noted that the first electrode 12 (ITO / Ag / ITO, 7nm / 100nm / 7nm) indicates the material of the first electrode 12, the first electrode 12 is a laminated structure formed by material indium tin oxide (ITO) / silver (Ag) / indium tin oxide (ITO), 7nm / 100nm / 7nm indicates the thickness, the thickness of ITO is 7nm, the thickness of Ag is 100nm, and the rest of the description is the same, which will not be repeated here.

[0101] Wherein, PEDOT is the abbreviation of poly 3,4-ethylenedioxythiophene, PF8Cz is the abbreviation of poly (9,9-n-dioctyl-2,7-fluorene-alt-9-isooctyl-3,6-carbazole), and QD is the abbreviation of quantum dot.

[0102] Figure 4 The left color example indicates the light brightness of the light-emitting device 10. The horizontal coordinate indicates the thickness x of the hole transport layer 14, and the vertical coordinate indicates the thickness y of the electron transport layer 16. When the SETFOS simulation software is used for simulation, a plurality of thickness data of the electron transport layer 16 and a plurality of thickness data of the hole transport layer 14 can be simulated, and the difference between each adjacent two thickness data of the electron transport layer 16 can be equal, and the difference between each adjacent two thickness data of the hole transport layer 14 can be equal.

[0103] From Figure 4 The optical performance of the light-emitting device 10 can be seen. The light brightness of the light-emitting device 10 is used to determine the thickness x of the hole transport layer 14 and the thickness y of the electron transport layer 16.

[0104] In Figure 4 the coordinates shown, the thickness x and the thickness y of the lower left area are relatively small, and at this time the microcavity length of the light-emitting device 10 is first order. The yellow-green area S1 indicates that the light brightness of the light-emitting device 10 is about 6500cd / m 2 , which is the optimal front light brightness of the light-emitting device 10. In the area S1, the thickness x of the hole transport layer 14 ranges from 20nm to 30nm, and the thickness y of the electron transport layer 16 ranges from 40nm to 50nm.

[0105] In Figure 4 the coordinates shown, the thickness x of the lower right area is relatively large, and the thickness y is relatively small, and at this time the microcavity length of the light-emitting device 10 is second order. The red area S2 indicates that the light brightness of the light-emitting device 10 is about 8500cd / m 2 , which is the optimal front light brightness of the light-emitting device 10. In the area S2, the thickness x of the hole transport layer 14 ranges from 150nm to 170nm, and the thickness y of the electron transport layer 16 ranges from 40nm to 70nm.

[0106] In Figure 4 the upper left region has a relatively small thickness x and a relatively large thickness y, and the microcavity length of the light emitting device 10 is second order. The yellow-green region S3 represents the light emitting device 10 having a light emitting brightness of about 6500 cd / m 2 , which is the optimal front light emitting brightness of the light emitting device 10. In the region S3, the thickness x of the hole transport layer 14 ranges from 20 nm to 30 nm, and the thickness y of the electron transport layer 16 ranges from 180 nm to 200 nm.

[0107]

[0108] Two examples are provided below, in which the thickness x of the hole transport layer 14 is different, and the optical and electrical properties of the light emitting device 10 are tested. The two examples are denoted as Example 1 and Example 2. In Example 1, the thickness of the electron transport layer 16 is 50 nm, and the thickness of the hole transport layer 14 is 15 nm. In Example 2, the thickness of the electron transport layer 16 is 50 nm, and the thickness of the hole transport layer 14 is 25 nm.

[0109] Figure 5 is a graph of the front current efficiency and voltage of the light emitting device 10, in which the abscissa represents the voltage in V, and the ordinate represents the front current efficiency in cd / A. It can be seen from Figure 5 that in Example 1 in which the thickness x of the hole transport layer 14 is 15 nm, the front current efficiency of the light emitting device 10 can reach about 120 cd / A in the voltage range of 2 V to 8 V. In Example 2 in which the thickness x of the hole transport layer 14 is 25 nm, the front current efficiency of the light emitting device 10 can reach about 100 cd / A in the voltage range of 2 V to 8 V. Therefore, when the thickness x of the hole transport layer 14 is 15 nm, the front current efficiency of the light emitting device 10 is larger, and the light emitting device 10 has better optical properties.

[0110] Figure 6 is a graph of the external quantum efficiency and voltage of the light emitting device 10, in which the abscissa represents the voltage in V, and the ordinate represents the external quantum efficiency. It can be seen from Figure 6 that in Example 1 in which the thickness x of the hole transport layer 14 is 15 nm, the external quantum efficiency of the light emitting device 10 can reach about 18% in the voltage range of 2 V to 8 V. In Example 2 in which the thickness x of the hole transport layer 14 is 25 nm, the external quantum efficiency of the light emitting device 10 can reach about 26% in the voltage range of 2 V to 8 V. Therefore, when the thickness x of the hole transport layer 14 is 25 nm, the external quantum efficiency of the light emitting device 10 is larger, and the light emitting device 10 has better electrical properties.​

[0111] Figure 7 is the light-emitting device 10 of Example 1, wherein the numerical values on the outside of the semicircle represent the light-emitting angle, and the dotted line represents the light-emitting intensity on the line is equal. From Figure 7 It can be seen that the front light-emitting of the light-emitting device 10 represented by Example 1 with the thickness x of the hole transport layer 14 of 15 nm is stronger. Therefore, when the thickness x of the hole transport layer 14 is 15 nm, the light-emitting device 10 has better optical performance.

[0112] Figure 8 is the light-emitting device 10 of Example 2. From Figure 8 It can be seen that the side light-emitting of the light-emitting device 10 represented by Example 2 with the thickness x of the hole transport layer 14 of 25 nm is stronger, and the front light-emitting is weaker. Therefore, when the thickness x of the hole transport layer 14 is 25 nm, the light-emitting device 10 has poor optical performance.

[0113] Figure 9 is the curve diagram of the relationship between the light-emitting brightness and the voltage of the light-emitting device 10, wherein the horizontal coordinate represents the voltage, the unit is V; the vertical coordinate represents the light-emitting brightness, the unit is cd / m 2 The light-emitting brightness of the light-emitting device 10 represented by Example 1 with the thickness x of the hole transport layer 14 of 15 nm is greater than the light-emitting brightness of the light-emitting device 10 represented by Example 2 with the thickness x of the hole transport layer 14 of 25 nm. Therefore, when the thickness x of the hole transport layer 14 is 15 nm, the light-emitting brightness of the light-emitting device 10 is large, and the light-emitting device 10 has better optical performance.

[0114] Therefore, by Figures 5-9 It can be seen that, under the condition that the thickness y of the electron transport layer 16 of the light-emitting device 10 is 50 nm, compared with the thickness x of the hole transport layer 14 of 25 nm, when the thickness x of the hole transport layer 14 is 15 nm, the front current efficiency of the light-emitting device 10 is larger, the front light-emitting is stronger, and the light-emitting brightness is large, and the light-emitting device 10 has better optical performance; when the thickness x of the hole transport layer 14 is 25 nm, the external quantum efficiency of the light-emitting device 10 is larger, and the light-emitting device 10 has better electrical performance. Therefore, the setting of the film layer thickness of the light-emitting device 10 has the problem that the better electrical performance and the better optical performance do not match.

[0115] The influence of increasing the thickness x of the hole transport layer 14 on the optical performance and the electrical performance of the light-emitting device 10 is introduced below. This example is represented as Example 3, in which the thickness y of the electron transport layer 16 is 50 nm, and the thickness x of the hole transport layer 14 ranges from 150 nm to 190 nm.

[0116] Figure 10A light emission angle distribution diagram of the light emitting device 10 of Example 3. From Figure 10 It can be seen that the front light emission of the light emitting device 10 is strong. Therefore, by increasing the thickness x of the hole transport layer 14, the front light emission effect of the light emitting device 10 can be improved.

[0117] Figure 11 A light emission brightness and voltage relationship diagram of the light emitting device 10 of Example 3. From Figure 11 It can be seen that, in the voltage range of 10V-20V, the light emission brightness of the light emitting device 10 ranges from 100cd / m 2 to 10000cd / m 2 , and Figure 9 In the voltage range of 2V-8V, the light emission brightness of the light emitting device 10 reaches 100000cd / m 2 . By comparing Figure 9 and Figure 11 It can be seen that increasing the thickness x of the hole transport layer 14 leads to a decrease in the light emission brightness of the light emitting device 10.

[0118] Figure 12 An external quantum efficiency and voltage relationship diagram of the light emitting device 10 of Example 3. From Figure 12 It can be seen that, in the voltage range of 10V-20V, the external quantum efficiency of the light emitting device 10 is less than 5%. In Figure 6 In Example 1, where the thickness x of the hole transport layer 14 is 15nm, in the voltage range of 2V-8V, the external quantum efficiency of the light emitting device 10 is up to about 18%. In Example 2, where the thickness x of the hole transport layer 14 is 25nm, in the voltage range of 2V-8V, the external quantum efficiency of the light emitting device 10 is up to about 26%. By comparing Figure 6 and Figure 12 It can be seen that increasing the thickness x of the hole transport layer 14 leads to a decrease in the external quantum efficiency of the light emitting device 10.

[0119] Therefore, increasing the thickness x of the hole transport layer 14 can improve the optical performance of the light emitting device 10, but it reduces the electrical performance of the light emitting device 10, and the setting of the film layer thickness of the light emitting device 10 has the problem that the electrical performance is better and the optical performance is better.

[0120] Based on this, as shown in Figure 13 , the embodiment of the present disclosure provides a light emitting substrate 100, which comprises a substrate 11 and a plurality of light emitting devices 10 located on one side of the substrate 11, each light emitting device 10 comprising a first electrode 12, a light emitting layer 15 and a second electrode 17 stacked in order, the first electrode 12 being closer to the substrate 11 than the second electrode 17. The first electrode 12 comprises a reflective electrode, and the second electrode 17 comprises a transparent electrode.

[0121] Exemplarily, the material of the light-emitting layer 15 includes quantum dots, the light-emitting substrate 100 containing quantum dots not only has the characteristics of self-light-emitting and compatibility with flexible process, but also has the advantages of narrow light-emitting spectrum, easy adjustment of light-emitting wavelength, and high light-emitting efficiency.

[0122] Exemplarily, the first electrode 12 is a reflective electrode, which is used to reflect light rays incident on the electrode, and the material of the first electrode 12 is, for example, metal, and the first electrode 12 can be a single-layer structure or a stacked structure. For example, the first electrode 12 is a stacked structure formed by indium tin oxide (ITO) / silver (Ag) / indium tin oxide (ITO).

[0123] Exemplarily, the light transmittance of the second electrode 17 is greater than or equal to 85% in the wavelength range of 400 nm to 700 nm. For example, the material of the second electrode 17 is selected from at least one of gold, silver, magnesium-silver alloy, molybdenum oxide, indium tin oxide, indium zinc oxide, indium tin zinc oxide, indium gallium oxide, and aluminum-doped zinc oxide.

[0124] Therefore, in the embodiment of the present disclosure, the light-emitting direction of the light-emitting device 10 is the direction away from the substrate 11, and the light-emitting device 10 is a top-emitting light-emitting device.

[0125] The weak microcavity effect is formed between the first electrode 12 and the second electrode 17, and the adjustment effect on the optical performance of the light-emitting device 10 is small. The film layer between the first electrode 12 and the second electrode 17 has a great influence on the electrical performance of the light-emitting device 10, and the thickness of the film layer between the first electrode 12 and the second electrode 17 can be adjusted to improve the balance of carrier transport of the light-emitting device 10, thereby improving the electrical performance of the light-emitting device 10.

[0126] Exemplarily, as shown in Figure 13 and Figure 14 The at least one light-emitting device 10 includes an optical adjustment structure 110, which includes an optical adjustment layer 30 and a transparent reflective layer 40. The optical adjustment layer 30 is located on the side of the second electrode 17 away from the substrate 11, and the transparent reflective layer 40 is located on the side of the optical adjustment layer 30 away from the substrate 11. The electrical conductivity of the optical adjustment layer 30 is less than that of the transparent reflective layer 40, and the thicknesses of the optical adjustment layer 30 and the transparent reflective layer 40 are different.

[0127] It should be noted that the transparent reflective layer 40 can be used to reflect part of the light rays incident on the transparent reflective layer 40, and also can transmit part of the light rays incident on the transparent reflective layer 40.

[0128] For example, Figure 14For the light path diagram of the light-emitting substrate 100, the light L4 emitted by the light-emitting layer 15 can directly pass through the transparent reflective layer 40, and the light L5 emitted by the light-emitting layer 15 is reflected on the transparent reflective layer 40.

[0129] Exemplarily, the material of the transparent reflective layer 40 is selected from at least one of gold, silver, magnesium-silver alloy, molybdenum oxide, tungsten oxide, zinc sulfide, indium tin oxide, indium gallium oxide, aluminum-doped zinc oxide, silver nanowire, copper nanowire, and carbon nanotube. The material of the transparent reflective layer 40 is a conductor, and the conductivity of the transparent reflective layer 40 is relatively large.

[0130] Exemplarily, the thickness of the transparent reflective layer 40 ranges from 10 nm to 100 nm. For example, when the material of the transparent reflective layer 40 includes magnesium-silver alloy, the thickness of the transparent reflective layer 40 ranges from 10 nm to 20 nm. When the material of the transparent reflective layer 40 includes indium tin oxide, indium gallium oxide, and aluminum-doped zinc oxide, the thickness of the transparent reflective layer 40 ranges from 50 nm to 100 nm. When the material of the transparent reflective layer 40 includes molybdenum oxide and tungsten oxide, the thickness of the transparent reflective layer 40 ranges from 10 nm to 50 nm. When the material of the transparent reflective layer 40 includes silver nanowire, copper nanowire, and carbon nanotube, the thickness of the transparent reflective layer 40 ranges from 20 nm to 50 nm.

[0131] Exemplarily, the material of the optical modulation layer 30 is selected from at least one of 4,4,4,-tris(carbazol-9-yl)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, 4,4'-bis(9-carbazol) biphenyl, silicon oxide, silicon nitride, and silicon oxynitride. The material of the optical modulation layer 30 is an insulator, and the conductivity of the optical modulation layer 30 is relatively small.

[0132] As compared with the material of the transparent reflective layer 40 and the material of the optical modulation layer 30, the conductivity of the optical modulation layer 30 is smaller than the conductivity of the transparent reflective layer 40. Moreover, in the preparation method of the transparent reflective layer 40 and the optical modulation layer 30, the transparent reflective layer 40 can be formed by using an evaporation process, and the optical modulation layer 30 can be formed by using a deposition process. The thickness of a film layer formed by using the evaporation process is generally thinner than the thickness of a film layer formed by using the deposition process. Therefore, the thickness of the transparent reflective layer 40 is generally smaller than the thickness of the optical modulation layer 30.

[0133] Exemplarily, as shown in FIG. 1, the light-emitting substrate 100 further includes a first electrode 10 and a second electrode 20. Figure 14As shown, the first electrode 12 includes a reflective electrode, and the transparent reflective layer 40 can be used to reflect part of the light rays incident on the transparent reflective layer 40 and also transmit part of the light rays incident on the transparent reflective layer 40. The light rays L4 emitted by the light-emitting layer 15 can be directly emitted by the transparent reflective layer 40; the light rays L6 emitted by the light-emitting layer 15 can be reflected by the first electrode 12 to the transparent reflective layer 40; the light rays L5 emitted by the light-emitting layer 15 can be reflected by the transparent reflective layer 40 to the first electrode 12, which are denoted as light rays L7, and the light rays L7 can be reflected by the first electrode 12 to the transparent reflective layer 40; the light rays reflected by the first electrode 12 are denoted as light rays L8. The interference between the light rays L5 and the light rays L8 is wide-angle interference, and the interference between the multiple light rays L8 is multi-beam interference. Thus, a strong microcavity is formed between the first electrode 12 and the transparent reflective layer 40.

[0134] The embodiments of the present disclosure form a strong microcavity effect by the provision of the transparent reflective layer 40, and the light-emitting layer 15 is located between the transparent reflective layer 40 and the first electrode 12, i.e., the light-emitting layer 15 is located in the microcavity, and the intensity of the light of certain wavelengths emitted by the light-emitting layer 15 is increased due to the microcavity effect, so as to improve the light-emitting efficiency of the light-emitting device 10.

[0135] Furthermore, the cavity length of the microcavity can be adjusted by adjusting the thickness of the optical regulation layer 30, and the provision of the optical regulation layer 30 does not affect the electrical performance of the light-emitting device 10 because the optical regulation layer 30 is located between the transparent reflective layer 40 and the second electrode 17. For example, after the thicknesses of the film layers between the first electrode 12 and the second electrode 17 are adjusted to the electrical performance of the light-emitting device 10 is optimal, the thickness of the optical regulation layer 30 is adjusted to the optical performance of the light-emitting device 10 is optimal.

[0136] Therefore, the embodiments of the present disclosure achieve the purpose of adjusting the optical performance and the electrical performance of the light-emitting device 10 separately by providing the optical adjustment structure 110 on the side of the second electrode 17 away from the substrate 11, so that the light-emitting device 10 has optimal electrical performance and optical performance.

[0137] Further, in the case that the thicknesses of the film layers between the first electrode 12 and the second electrode 17 are relatively thin, the second-order microcavity effect of the light-emitting device 10 can be achieved by increasing the thickness of the optical regulation layer 30, so that the light-emitting device 10 has a stronger light-emitting intensity, and the light-emitting device 10 has optimal optical performance.

[0138] In some embodiments, as shown in FIG. 1B, the light-emitting device 10 further includes an optical regulation layer 30 located between the transparent reflective layer 40 and the second electrode 17. Figure 13 As shown, the light transmittance of the optical regulation layer 30 is greater than or equal to the light transmittance of the transparent reflective layer 40.

[0139] It should be noted that light transmittance refers to the ratio of the luminous flux transmitted to the incident luminous flux as incident light travels from the irradiated surface of the film to the opposite surface. For example, the light transmittance of a film can be measured using an ultraviolet-visible absorption spectrometer.

[0140] For example, the light transmittance of the optical control layer 30 is greater than or equal to 90%. For example, the light transmittance of the optical control layer 30 is 90%, 92%, 93%, 96%, 97%, 98%, 99%, or 100%, etc., and there is no limitation here.

[0141] By setting the light transmittance of the optical control layer 30 to be greater than or equal to 90%, the optical control layer 30 can adjust the length of the microcavity while ensuring that the light-emitting device 10 has a high light transmittance.

[0142] For example, the light transmittance of the transparent reflective layer 40 is greater than or equal to 60% and less than or equal to 90%. This allows the transparent reflective layer 40 to reflect a portion of the light incident on it, while also allowing a portion of the light incident on it to pass through.

[0143] By setting the light transmittance of the optical control layer 30 to be greater than or equal to the light transmittance of the transparent reflective layer 40, light can pass through the optical control layer 30 and be further transmitted or reflected in the transparent reflective layer 40, thereby causing light interference and improving the optical performance of the light-emitting device 10.

[0144] In some embodiments, such as Figure 13 As shown, the extinction coefficient of the optical control layer 30 ranges from 0.001 μm. -1 ~0.005m -1 .

[0145] For example, the extinction coefficient of the optical control layer 30 is 0.001m. -1 0.002m -1 0.003m -1 0.004m -1 or 0.005m -1 There are no restrictions here.

[0146] It should be noted that the extinction coefficient reflects the light absorption of the film layer. A larger extinction coefficient indicates that the film layer will absorb some light, resulting in a decrease in the film layer's transmittance. For example, the extinction coefficient of the film layer can be measured using an ellipsometer.

[0147] The extinction coefficient of the optical control layer 30 ranges from 0.001m. -1 ~0.005m-1 The thickness d2 of the first regulating portion 301 is in a range of 55nm-65nm, so as to ensure that the optical regulating layer 30 has a small extinction coefficient, and the optical regulating layer 30 has a high light transmittance.

[0148] In some embodiments, as shown in Figure 13 and Figure 15 , the plurality of light emitting devices 10 comprises: a first light emitting device 101, the first light emitting device 101 is configured to emit first color light; the optical regulating layer 30 comprises: a first regulating portion 301, the first regulating portion 301 is arranged corresponding to the first light emitting device 101; wherein the thickness d2 of the first regulating portion 301 is in a range of 55nm-65nm.

[0149] For example, the first color light is configured to be green light.

[0150] It should be noted that the thickness d2 of the first regulating portion 301 is the size of the first regulating portion 301 in the first direction Y, and the first direction Y is perpendicular to the substrate 11.

[0151] For example, the thickness d2 of the first regulating portion 301 is 55nm, 57nm, 59nm, 60nm, 61nm, 62nm, 64nm or 65nm, etc., which is not limited here.

[0152] Through the setting that the thickness d2 of the first regulating portion 301 is in a range of 55nm-65nm, the first regulating portion 301 can adjust the cavity length of the microcavity between the first electrode 12 of the first light emitting device 101 and the transparent reflection layer 40, increase the mutual interference between the light, so that the first light emitting device 101 has a strong light emitting brightness, and the content of the light emitting brightness is specifically referred to the introduction of the light emitting brightness diagram of the first light emitting device 101 below. Figure 15

[0153] In some embodiments, as shown in Figure 13 and Figure 15 , the light emitting substrate 100 further comprises: a light extraction layer 18, the light extraction layer 18 is located on the side of the transparent reflection layer 40 away from the substrate 11; the light extraction layer 18 comprises: a first light extraction portion 181, the first light extraction portion 181 is arranged corresponding to the first light emitting device 101. Wherein the thickness d3 of the first light extraction portion 181 is in a range of 85nm-115nm.

[0154] For example, the thickness d3 of the first light extraction portion 181 is 85nm, 90nm, 95nm, 100nm, 105nm, 110nm or 115nm, etc., which is not limited here.

[0155] ​It should be noted that the difference between the refractive index of the transparent reflective layer 40 and the refractive index of air is relatively large. This causes total reflection of light between the transparent reflective layer 40 and the air, resulting in a decrease in the light extraction efficiency of the light-emitting device 10. Therefore, a light extraction layer 18 can be provided on the side of the transparent reflective layer 40 away from the substrate 11, and the refractive index of the light extraction layer 18 is between that of the transparent reflective layer 40 and the refractive index of air. This reduces total internal reflection of light at the interface between the transparent reflective layer 40 and the light extraction layer 18, as well as at the interface between the light extraction layer 18 and the air, which is beneficial for light extraction and improves the light extraction efficiency of the light-emitting device 10.

[0156] Therefore, the light extraction layer 18 can improve the front light emission effect of the light-emitting device 10. Furthermore, by setting the thickness d3 of the first light extraction section 181 to be in the range of 85nm to 115nm, the first light extraction section 181 can further increase the front light emission of the first light-emitting device 101, thereby giving the first light-emitting device 101 a stronger light emission brightness. For details regarding light emission brightness, please refer to the following... Figure 15 This document introduces the luminance diagram of the first light-emitting device 101.

[0157] Figure 15 This is a light emission brightness diagram of the first light-emitting device 101, where the horizontal axis represents the thickness d2 of the first control section 301, and the vertical axis represents the thickness d3 of the first light extraction section 181. For example... Figure 13 As shown, the structure of the first light-emitting device 101 is as follows: first electrode 12 (ITO / Ag / ITO, 7nm / 100nm / 7nm) / hole injection layer 13 (PEDOT, 25nm) / hole transport layer 14 (PF8Cz, 25nm) / light-emitting layer 15 (QD, 20nm) / electron transport layer 16 (ZnMgO, 50nm) / second electrode 17 (ITO, 50nm) / first control unit 301 (d2) / transparent reflective layer 40 (Mg:Ag, 10nm) / first light extraction unit 181 (d3).

[0158] from Figure 15 As can be seen, the red area S4 indicates that the luminance emitted by the first light-emitting device 101 is approximately 9000 cd / m². 2 This brightness is the preferred front-facing light emission brightness of the first light-emitting device 101. In region S4, the thickness d2 of the first control section 301 ranges from 55nm to 65nm, and the thickness d3 of the first light extraction section 181 ranges from 85nm to 115nm.

[0159] Therefore, by setting the thickness of the first regulating portion 301 to be in the range of 55nm-65nm and the thickness of the first light extraction portion 181 to be in the range of 85nm-115nm, the first light emitting device 101 can have a stronger light extraction brightness.

[0160] In some embodiments, as shown in Figure 16 and Figure 17 , the first light emitting device 101 further comprises a first hole transport layer 141, which is located between the first electrode 12 and the light emitting layer 15 of the first light emitting device 101, or which is located between the light emitting layer 15 and the second electrode 17 of the first light emitting device 101; wherein the thickness d4 of the first hole transport layer 141 is in the range of 20nm-30nm.

[0161] For example, as shown in Figure 16 , the first hole transport layer 141 is located between the first electrode 12 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is an anode, and the second electrode 17 of the first light emitting device 101 is a cathode.

[0162] For example, as shown in Figure 17 , the first hole transport layer 141 is located between the light emitting layer 15 and the second electrode 17 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode.

[0163] For example, the thickness d4 of the first hole transport layer 141 is 20nm, 21nm, 22nm, 23nm, 25nm, 26nm, 27nm, 28nm, 29nm or 30nm, etc., which is not limited here.

[0164] By setting the thickness d4 of the first hole transport layer 141 to be in the range of 20nm-30nm, the hole transport performance of the first light emitting device 101 can be improved, which is conducive to improving the electrical performance of the first light emitting device 101.

[0165] In some embodiments, as shown in Figure 18 and Figure 19 , the first light emitting device 101 further comprises a first electron transport layer 161, which is located between the first electrode 12 and the light emitting layer 15 of the first light emitting device 101, or which is located between the light emitting layer 15 and the second electrode 17 of the first light emitting device 101; wherein the thickness d5 of the first electron transport layer 161 is in the range of 30nm-70nm.

[0166] For example, as shown in Figure 18As shown in FIG. 1A, the first electron transport layer 161 is located between the first electrode 12 of the first light emitting device 101 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode.

[0167] As shown in FIG. 1A, the first electron transport layer 161 is located between the first electrode 12 of the first light emitting device 101 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode. Figure 19 As shown in FIG. 1A, the first electron transport layer 161 is located between the first electrode 12 of the first light emitting device 101 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode.

[0168] As shown in FIG. 1A, the first electron transport layer 161 is located between the first electrode 12 of the first light emitting device 101 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode.

[0169] As shown in FIG. 1A, the first electron transport layer 161 is located between the first electrode 12 of the first light emitting device 101 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode.

[0170] As shown in FIG. 1A, the first electron transport layer 161 is located between the first electrode 12 of the first light emitting device 101 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode. Figure 13 and Figure 20 As shown in FIG. 1A, the first electron transport layer 161 is located between the first electrode 12 of the first light emitting device 101 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode.

[0171] As shown in FIG. 1A, the first electron transport layer 161 is located between the first electrode 12 of the first light emitting device 101 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode. Figure 13 As shown in FIG. 1A, the first electron transport layer 161 is located between the first electrode 12 of the first light emitting device 101 and the light emitting layer 15 of the first light emitting device 101. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode.

[0172] Figure 20 ​As shown, the first electrode 12 of the first light emitting device 101, the first electron transport layer 161, the light emitting layer 15 of the first light emitting device 101, the first hole transport layer 141 and the second electrode 17 of the first light emitting device 101 are arranged in a direction away from the substrate 11. At this time, the first electrode 12 of the first light emitting device 101 is a cathode, and the second electrode 17 of the first light emitting device 101 is an anode.

[0173] By setting the thickness d4 of the first hole transport layer 141 in the range of 20nm-30nm and the thickness d5 of the first electron transport layer 161 in the range of 30nm-70nm, the transport performance of holes and electrons of the first light emitting device 101 can be improved, and the balance of electron and hole transport can be improved, which is beneficial to improve the electrical performance of the first light emitting device 101.

[0174] In some embodiments, as shown in Figure 13 and Figure 21 , the plurality of light emitting devices 10 comprises: a second light emitting device 102, the second light emitting device 102 is configured to emit second color light; the optical regulation layer 30 comprises: a second regulation part 302, the second regulation part 302 is arranged corresponding to the second light emitting device 102; wherein the thickness d6 of the second regulation part 302 ranges from 95nm to 115nm.

[0175] Exemplarily, the second color light is configured as red light.

[0176] Exemplarily, the thickness d6 of the second regulation part 302 is 95nm, 97nm, 98nm, 100nm, 102nm, 105nm, 110nm or 115nm, etc., which is not limited here.

[0177] By setting the thickness d6 of the second regulation part 302 in the range of 95nm-115nm, the second regulation part 302 can adjust the cavity length of the microcavity between the first electrode 12 of the second light emitting device 102 and the transparent reflection layer 40, increase the mutual interference between light, so that the second light emitting device 102 has stronger light emitting brightness. For the content of the light emitting brightness of the second light emitting device 102, please refer to the introduction of the light emitting brightness chart of the second light emitting device 102 below, which will not be described here. Figure 21

[0178] In some embodiments, as shown in Figure 13 and Figure 21 , the light emitting substrate 100 further comprises: a light extraction layer 18, the light extraction layer 18 is located on the side of the transparent reflection layer 40 away from the substrate 11; the light extraction layer 18 comprises: a second light extraction part 182, the second light extraction part 182 is arranged corresponding to the second light emitting device 102; wherein the thickness d7 of the second light extraction part 182 ranges from 105nm to 145nm. ​

[0179] For example, the thickness d7 of the second light extraction section 182 is 105nm, 110nm, 115nm, 120nm, 125nm, 130nm, 135nm, 140nm or 145nm, etc., and there is no limitation here.

[0180] By setting the second light extraction section 182 and its thickness d7 to be in the range of 105nm to 145nm, total internal reflection of light at the interface between the transparent reflective layer 40 and the second light extraction section 182, as well as at the interface between the second light extraction section 182 and the air, can be reduced. This is beneficial for light extraction and can increase the front light emission of the second light-emitting device 102, thereby giving the second light-emitting device 102 a stronger light emission brightness. For details regarding light emission brightness, please refer to the following... Figure 21 This section introduces the content of the light output brightness diagram of the second light-emitting device 102.

[0181] Figure 21 This is a brightness diagram of the second light-emitting device 102, where the horizontal axis represents the thickness d6 of the second control section 302, and the vertical axis represents the thickness d7 of the second light extraction section 182. For example... Figure 13 As shown, the structure of the second light-emitting device 102 is as follows: first electrode 12 (ITO / Ag / ITO, 7nm / 100nm / 7nm) / hole injection layer 13 (PEDOT, 25nm) / hole transport layer 14 (PF8Cz, 25nm) / light-emitting layer 15 (QD, 20nm) / electron transport layer 16 (ZnMgO, 50nm) / second electrode 17 (ITO, 50nm) / second control unit 302 (d6) / transparent reflective layer 40 (Mg:Ag, 10nm) / second light extraction unit 182 (d7).

[0182] from Figure 21 As can be seen, the red area S5 indicates that the luminance emitted by the second light-emitting device 102 is approximately 3500 cd / m². 2 This brightness is the optimal front-facing light emission brightness of the second light-emitting device 102. In region S5, the thickness d6 of the second control section 302 ranges from 95nm to 115nm, and the thickness d7 of the second light extraction section 182 ranges from 105nm to 145nm.

[0183] Therefore, by setting the thickness d6 of the second control unit 302 to be in the range of 95nm to 115nm and the thickness d7 of the second light extraction unit 182 to be in the range of 105nm to 145nm, the second light-emitting device 102 can have a strong light-emitting brightness.

[0184] In some embodiments, such as Figure 16 and Figure 17As shown in FIG. 1, the second light-emitting device 102 further comprises a second hole transport layer 142; the second hole transport layer 142 is located between the first electrode 12 of the second light-emitting device 102 and the light-emitting layer 15 of the second light-emitting device 102, or the second hole transport layer 142 is located between the light-emitting layer 15 of the second light-emitting device 102 and the second electrode 17 of the second light-emitting device 102; wherein the thickness d8 of the second hole transport layer 142 ranges from 20 nm to 30 nm.

[0185] As shown in FIG. 1, Figure 16 As shown in FIG. 1, the second hole transport layer 142 is located between the first electrode 12 of the second light-emitting device 102 and the light-emitting layer 15 of the second light-emitting device 102. At this time, the first electrode 12 of the second light-emitting device 102 is an anode, and the second electrode 17 of the second light-emitting device 102 is a cathode.

[0186] As shown in FIG. 1, Figure 17 As shown in FIG. 1, the second hole transport layer 142 is located between the first electrode 12 of the second light-emitting device 102 and the light-emitting layer 15 of the second light-emitting device 102. At this time, the first electrode 12 of the second light-emitting device 102 is an anode, and the second electrode 17 of the second light-emitting device 102 is a cathode.

[0187] As shown in FIG. 1, the thickness d8 of the second hole transport layer 142 is 20 nm, 21 nm, 22 nm, 23 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm or 30 nm, etc., which is not limited here.

[0188] By setting the thickness d8 of the second hole transport layer 142 ranging from 20 nm to 30 nm, the hole transport performance of the second light-emitting device 102 can be improved, which is conducive to improving the electrical performance of the second light-emitting device 102.

[0189] As shown in FIG. 1, Figure 18 and Figure 19 As shown in FIG. 1, the second light-emitting device 102 further comprises a second electron transport layer 162; the second electron transport layer 162 is located between the first electrode 12 of the second light-emitting device 102 and the light-emitting layer 15 of the second light-emitting device 102, or the second electron transport layer 162 is located between the light-emitting layer 15 of the second light-emitting device 102 and the second electrode 17 of the second light-emitting device 102; wherein the thickness d9 of the second electron transport layer 162 ranges from 30 nm to 70 nm.

[0190] As shown in FIG. 1, Figure 18 As shown in FIG. 1, the second electron transport layer 162 is located between the first electrode 12 of the second light-emitting device 102 and the light-emitting layer 15 of the second light-emitting device 102. At this time, the first electrode 12 of the second light-emitting device 102 is a cathode, and the second electrode 17 of the second light-emitting device 102 is an anode.

[0191] Exemplarily, as shown in Figure 19 Exemplarily, the second electron transport layer 162 is located between the light emitting layer 15 of the second light emitting device 102 and the second electrode 17 of the second light emitting device 102. At this time, the first electrode 12 of the second light emitting device 102 is an anode, and the second electrode 17 of the second light emitting device 102 is a cathode.

[0192] Exemplarily, the thickness d9 of the second electron transport layer 162 is 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm or 70 nm, etc., which is not limited herein.

[0193] By setting the thickness d9 of the second electron transport layer 162 in the range of 30 nm to 70 nm, the electron transport performance of the second light emitting device 102 can be improved, which is conducive to improving the electrical performance of the second light emitting device 102.

[0194] In some embodiments, as shown in Figure 13 and Figure 20 Exemplarily, the second light emitting device 102 further comprises: a second hole transport layer 142 and a second electron transport layer 162; the first electrode 12 of the second light emitting device 102, the second hole transport layer 142, the light emitting layer 15 of the second light emitting device 102, the second electron transport layer 162 and the second electrode 17 of the second light emitting device 102 are arranged in a direction away from the substrate 11; or, the first electrode 12 of the second light emitting device 102, the second electron transport layer 162, the light emitting layer 15 of the second light emitting device 102, the second hole transport layer 142 and the second electrode 17 of the second light emitting device 102 are arranged in a direction away from the substrate 11; wherein the thickness d8 of the second hole transport layer 142 ranges from 20 nm to 30 nm; the thickness d9 of the second electron transport layer 162 ranges from 30 nm to 70 nm.

[0195] Exemplarily, as shown in Figure 13 The first electrode 12 of the second light emitting device 102, the second hole transport layer 142, the light emitting layer 15 of the second light emitting device 102, the second electron transport layer 162 and the second electrode 17 of the second light emitting device 102 are arranged in a direction away from the substrate 11. At this time, the first electrode 12 of the second light emitting device 102 is an anode, and the second electrode 17 of the second light emitting device 102 is a cathode.

[0196] Exemplarily, as shown in Figure 20 The first electrode 12 of the second light emitting device 102, the second hole transport layer 142, the light emitting layer 15 of the second light emitting device 102, the second electron transport layer 162 and the second electrode 17 of the second light emitting device 102 are arranged in a direction away from the substrate 11. At this time, the first electrode 12 of the second light emitting device 102 is an anode, and the second electrode 17 of the second light emitting device 102 is a cathode.

[0197] By setting the thickness d8 of the second hole transport layer 142 in the range of 20-30 nm and the thickness d9 of the second electron transport layer 162 in the range of 30-70 nm, the transport performance of holes and electrons of the second light emitting device 102 can be improved, and the balance of electron and hole transport can be improved, which is beneficial to improve the electrical performance of the second light emitting device 102.

[0198] In some embodiments, as shown in Figure 13 and Figure 1 , the plurality of light emitting devices 10 comprises: a third light emitting device 103, the third light emitting device 103 is configured to emit third color light; the optical regulation layer 30 comprises: a third regulation part 303, the third regulation 303 is arranged corresponding to the third light emitting device 103; wherein the thickness d10 of the third regulation part 303 ranges from 5 nm to 15 nm.

[0199] Exemplarily, the third color light is configured as blue light.

[0200] Exemplarily, the thickness d10 of the third regulation part 303 is 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 12 nm or 15 nm, etc., which is not limited here.

[0201] By setting the thickness d10 of the third regulation part 303 in the range of 5-15 nm, the third regulation part 303 can adjust the cavity length of the microcavity between the first electrode 12 of the third light emitting device 103 and the transparent reflection layer 40, increase the mutual interference between light, so that the third light emitting device 103 has stronger light emission brightness. For the content of the light emission brightness of the third light emitting device 103, please refer to the following introduction of the light emission brightness chart of the third light emitting device 103, which will not be described here. ​

[0202] In some embodiments, as shown in ​ and ​ , the light emitting substrate 100 further comprises: a light extraction layer 18, the light extraction layer 18 is located on the side of the transparent reflection layer 40 away from the substrate 11; the light extraction layer 18 comprises: a third light extraction part 183, the third light extraction part 183 is arranged corresponding to the third light emitting device 103; wherein the thickness d11 of the third light extraction part 183 ranges from 55 nm to 85 nm.

[0203] Exemplarily, the thickness d11 of the third light extraction part 183 is 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm or 85 nm, etc., which is not limited here.

[0204] ​By setting the third light extraction part 183 and the thickness d11 of the third light extraction part 183 in the range of 55nm-85nm, the total reflection of light at the interface between the transparent reflection layer 40 and the third light extraction part 183 and at the interface between the third light extraction part 183 and air can be reduced, which is beneficial for light extraction and can increase the front light emission of the third light emitting device 103, so that the third light emitting device 103 has a stronger light emission brightness. For details of the light emission brightness, please refer to the following introduction of the light emission brightness diagram of the third light emitting device 103. ​

[0205] ​ The light emission brightness diagram of the third light emitting device 103, wherein the abscissa represents the thickness d10 of the third control part 303, and the ordinate represents the thickness d11 of the third light extraction part 183. As shown in ​ , the structure of the third light emitting device 103 is represented as: first electrode 12 (ITO / Ag / ITO, 7nm / 100nm / 7nm) / hole injection layer 13

[0206] (PEDOT, 25nm) / hole transport layer 14 (PF8Cz, 25nm) / light emitting layer 15 (QD, 20nm) / electron transport layer 16 (ZnMgO, 50nm) / second electrode 17 (ITO, 50nm) / third control part 303 (d10) / transparent reflection layer 40 (Mg:Ag, 10nm) / third light extraction part 183 (d11).

[0207] As can be seen from ​ , the red area S6 represents that the light emission brightness of the third light emitting device 103 is about 170cd / m 2 , which is the optimal front light emission brightness of the third light emitting device 103. In the area S6, the thickness d10 of the third control part 303 is in the range of 5nm-15nm, and the thickness d11 of the third light extraction part 183 is in the range of 55nm-85nm.

[0208] Therefore, by setting the thickness d10 of the third control part 303 in the range of 5nm-15nm and the thickness d11 of the third light extraction part 183 in the range of 55nm-85nm, the third light emitting device 103 can have a stronger light emission brightness.

[0209] In some embodiments, as ​ and ​ ​As shown in FIG. 1, the third light-emitting device 103 further comprises a third hole transport layer 143; the third hole transport layer 143 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103; or, the third hole transport layer 143 is located between the light-emitting layer 15 of the third light-emitting device 103 and the second electrode 17 of the third light-emitting device 103; wherein the thickness d12 of the third hole transport layer 143 ranges from 20 nm to 40 nm.

[0210] As shown in FIG. 1, the third hole transport layer 143 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103. At this time, the first electrode 12 of the third light-emitting device 103 is an anode, and the second electrode 17 of the third light-emitting device 103 is a cathode. ​ As shown in FIG. 1, the third hole transport layer 143 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103. At this time, the first electrode 12 of the third light-emitting device 103 is an anode, and the second electrode 17 of the third light-emitting device 103 is a cathode.

[0211] ​ As shown in FIG. 1, the third hole transport layer 143 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103. At this time, the first electrode 12 of the third light-emitting device 103 is an anode, and the second electrode 17 of the third light-emitting device 103 is a cathode.

[0212] As shown in FIG. 1, the third hole transport layer 143 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103. At this time, the first electrode 12 of the third light-emitting device 103 is an anode, and the second electrode 17 of the third light-emitting device 103 is a cathode.

[0213] As shown in FIG. 1, the third hole transport layer 143 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103. At this time, the first electrode 12 of the third light-emitting device 103 is an anode, and the second electrode 17 of the third light-emitting device 103 is a cathode.

[0214] As shown in FIG. 1, the third hole transport layer 143 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103. At this time, the first electrode 12 of the third light-emitting device 103 is an anode, and the second electrode 17 of the third light-emitting device 103 is a cathode. ​ ​ As shown in FIG. 1, the third light-emitting device 103 further comprises a third electron transport layer 163; the third electron transport layer 163 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103; or, the third electron transport layer 163 is located between the light-emitting layer 15 of the third light-emitting device 103 and the second electrode 17 of the third light-emitting device 103; wherein the thickness d13 of the third electron transport layer 163 ranges from 40 nm to 80 nm.

[0215] As shown in FIG. 1, the third hole transport layer 143 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103. At this time, the first electrode 12 of the third light-emitting device 103 is an anode, and the second electrode 17 of the third light-emitting device 103 is a cathode. ​ As shown in FIG. 1, the third hole transport layer 143 is located between the first electrode 12 of the third light-emitting device 103 and the light-emitting layer 15 of the third light-emitting device 103. At this time, the first electrode 12 of the third light-emitting device 103 is an anode, and the second electrode 17 of the third light-emitting device 103 is a cathode.​​

[0216] For example, such as ​ As shown, the third electron transport layer 163 is located between the light-emitting layer 15 of the third light-emitting device 103 and the second electrode 17 of the third light-emitting device 103. At this time, the first electrode 12 of the third light-emitting device 103 is the anode, and the second electrode 17 of the third light-emitting device 103 is the cathode.

[0217] For example, the thickness d13 of the third electron transport layer 163 is 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm or 80nm, etc., and there is no limitation here.

[0218] By setting the thickness d13 of the third electron transport layer 163 to be in the range of 40nm to 80nm, the electron transport performance of the third light-emitting device 103 can be improved, which is beneficial to improving the electrical performance of the third light-emitting device 103.

[0219] In some embodiments, such as ​ and ​ As shown, the third light-emitting device 103 further includes: a third hole transport layer 143 and a third electron transport layer 163; the first electrode 12, the third hole transport layer 143, the light-emitting layer 15, the third electron transport layer 163, and the second electrode 17 of the third light-emitting device 103 are arranged in a direction away from the substrate 11; or, the first electrode 12, the third electron transport layer 163, the light-emitting layer 15, the third hole transport layer 143, and the second electrode 17 of the third light-emitting device 103 are arranged in a direction away from the substrate 11; wherein, the thickness d12 of the third hole transport layer 143 ranges from 20 nm to 40 nm; and the thickness d13 of the third electron transport layer 163 ranges from 40 nm to 80 nm.

[0220] For example, such as ​ As shown, the first electrode 12, the third hole transport layer 143, the light-emitting layer 15, the third electron transport layer 163, and the second electrode 17 of the third light-emitting device 103 are arranged in a direction away from the substrate 11. At this time, the first electrode 12 of the third light-emitting device 103 is the anode, and the second electrode 17 of the third light-emitting device 103 is the cathode.

[0221] For example, such as ​As shown, the first electrode 12, the third electron transport layer 163, the light-emitting layer 15, the third hole transport layer 143, and the second electrode 17 of the third light-emitting device 103 are arranged along a direction away from the substrate 11. In this case, the first electrode 12 of the third light-emitting device 103 is the cathode, and the second electrode 17 of the third light-emitting device 103 is the anode.

[0222] By setting the thickness d12 of the third hole transport layer 143 to be in the range of 20nm to 40nm and the thickness d13 of the third electron transport layer 163 to be in the range of 40nm to 80nm, the hole and electron transport performance of the third light-emitting device 103 can be improved, and the balance of electron and hole transport can be improved, which is beneficial to improving the electrical performance of the third light-emitting device 103.

[0223] In some embodiments, such as ​ As shown, the light-emitting device 10 further includes a hole injection layer 13, which is located on the side of the hole transport layer 14 away from the light-emitting layer 15.

[0224] By setting the hole injection layer 13, the hole injection capability of the light-emitting device 10 can be improved, thereby improving the electrical performance of the light-emitting device 10.

[0225] For example, the light-emitting device 10 further includes at least one of an electron blocking layer, a hole blocking layer, and an electron injection layer. For instance, the electron blocking layer is located between the hole transport layer 14 and the light-emitting layer 15, the hole blocking layer is located on the side of the electron transport layer 16 closer to the light-emitting layer 15, and the electron injection layer is located on the side of the electron transport layer 16 away from the light-emitting layer 15.

[0226] By setting an electron injection layer, the electron injection capability of the light-emitting device 10 can be improved. By setting an electron blocking layer and a hole blocking layer, the balance of electron and hole transport in the light-emitting device 10 can be further improved, which is beneficial to improving the electrical performance of the light-emitting device 10.

[0227] like ​ As shown, some embodiments of the present disclosure provide a light-emitting device 1000 including a light-emitting substrate 100 as described in any of the above embodiments.

[0228] Of course, the light-emitting device 1000 may also include other components, such as a driver chip for providing electrical signals to the light-emitting substrate 100 to drive the light-emitting substrate 100 to emit light. The chip may be a circuit board and / or an integrated circuit (IC).

[0229] In some embodiments, the light emitting device 1000 can be a lighting device, in which case the light emitting device 1000 is used as a light source to achieve a lighting function. For example, the light emitting device 1000 can be a backlight module in a liquid crystal display device, a lamp for internal or external lighting, or various signal lamps, etc.

[0230] In other embodiments, the light emitting device 1000 can be a display device, in which case the light emitting substrate 100 is a display substrate used to achieve a display image (i.e. picture) function.

[0231] The above merely provides a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who thinks of changes or replacements within the technical scope disclosed by the present disclosure shall be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. A light-emitting substrate, characterized in that, include: Substrate; Multiple light-emitting devices are located on one side of the substrate. Each light-emitting device includes a stacked first electrode, a light-emitting layer, and a second electrode, wherein the first electrode is closer to the substrate than the second electrode. The first electrode includes a reflective electrode, and the second electrode includes a transparent electrode; At least one of the light-emitting devices includes: an optical adjustment structure, the optical adjustment structure including an optical control layer and a transparent reflective layer, the optical control layer being located on the side of the second electrode away from the substrate, and the transparent reflective layer being located on the side of the optical control layer away from the substrate; the conductivity of the optical control layer is less than the conductivity of the transparent reflective layer, and the thicknesses of the optical control layer and the transparent reflective layer are different.

2. The light-emitting substrate according to claim 1, characterized in that, The light transmittance of the optical control layer is greater than or equal to the light transmittance of the transparent reflective layer, and the range of the light transmittance of the optical control layer is greater than or equal to 90%.

3. The light-emitting substrate according to claim 1, characterized in that, The extinction coefficient of the optical control layer ranges from 0.001m. -1 ~0.005m -1 .

4. The light-emitting substrate according to claim 1, characterized in that, The material of the optical control layer is selected from at least one of 4,4,4'-tris(carbazole-9-yl)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, 4,4'-di(9-carbazole)biphenyl, silicon oxide, silicon nitride, and silicon oxynitride.

5. The light-emitting substrate according to claim 1, characterized in that, The plurality of light-emitting devices includes: a first light-emitting device, the first light-emitting device being configured to emit light of a first color; The optical control layer includes: a first control unit, which is disposed corresponding to the first light-emitting device; The thickness of the first control unit ranges from 55nm to 65nm.

6. The light-emitting substrate according to claim 5, characterized in that, Also includes: A light extraction layer is located on the side of the transparent reflective layer away from the substrate; The light extraction layer includes: a first light extraction section, which is disposed corresponding to the first light-emitting device; The thickness of the first light extraction section ranges from 85 nm to 115 nm.

7. The light-emitting substrate according to claim 5, characterized in that, The first light-emitting device further includes: a first hole transport layer; the first hole transport layer is located between the first electrode and the light-emitting layer of the first light-emitting device, or the first hole transport layer is located between the light-emitting layer and the second electrode of the first light-emitting device. The thickness of the first hole transport layer ranges from 20nm to 30nm.

8. The light-emitting substrate according to claim 5, characterized in that, The first light-emitting device further includes: a first electron transport layer; the first electron transport layer is located between the first electrode of the first light-emitting device and the light-emitting layer of the first light-emitting device, or the first electron transport layer is located between the light-emitting layer of the first light-emitting device and the second electrode of the first light-emitting device; The thickness of the first electron transport layer ranges from 30 nm to 70 nm.

9. The light-emitting substrate according to claim 5, characterized in that, The first light-emitting device further includes: a first hole transport layer and a first electron transport layer; The first electrode, the first hole transport layer, the light-emitting layer, the first electron transport layer, and the second electrode of the first light-emitting device are disposed along a direction away from the substrate; or, the first electrode, the first electron transport layer, the light-emitting layer, the first hole transport layer, and the second electrode of the first light-emitting device are disposed along a direction away from the substrate. The thickness of the first hole transport layer ranges from 20 nm to 30 nm, and the thickness of the first electron transport layer ranges from 30 nm to 70 nm.

10. The light-emitting substrate according to claim 1, characterized in that, The plurality of light-emitting devices includes: a second light-emitting device, the second light-emitting device being configured to emit light of a second color; The optical control layer includes: a second control unit, which is disposed correspondingly to the second light-emitting device; The thickness of the second control unit ranges from 95 nm to 115 nm.

11. The light-emitting substrate according to claim 10, characterized in that, Also includes: A light extraction layer; the light extraction layer includes: a second light extraction part, the second light extraction part being disposed corresponding to the second light-emitting device; The thickness of the second light extraction section ranges from 105 nm to 145 nm.

12. The light-emitting substrate according to claim 10, characterized in that, The second light-emitting device further includes: a second hole transport layer; the second hole transport layer is located between the first electrode of the second light-emitting device and the light-emitting layer of the second light-emitting device, or the second hole transport layer is located between the light-emitting layer of the second light-emitting device and the second electrode of the second light-emitting device; The thickness of the second hole transport layer ranges from 20 nm to 30 nm.

13. The light-emitting substrate according to claim 10, characterized in that, The second light-emitting device further includes: a second electron transport layer; the second electron transport layer is located between the first electrode of the second light-emitting device and the light-emitting layer of the second light-emitting device; or, the second electron transport layer is located between the light-emitting layer of the second light-emitting device and the second electrode of the second light-emitting device; The thickness of the second electron transport layer ranges from 30 nm to 70 nm.

14. The light-emitting substrate according to claim 10, characterized in that, The second light-emitting device further includes: a second hole transport layer and a second electron transport layer; The first electrode, the second hole transport layer, the light-emitting layer, the second electron transport layer, and the second electrode of the second light-emitting device are arranged in a direction away from the substrate; or, the first electrode, the second electron transport layer, the light-emitting layer, the second hole transport layer, and the second electrode of the second light-emitting device are arranged in a direction away from the substrate. The thickness of the second hole transport layer ranges from 20 nm to 30 nm; the thickness of the second electron transport layer ranges from 30 nm to 70 nm.

15. The light-emitting substrate according to claim 1, characterized in that, The plurality of light-emitting devices includes: a third light-emitting device, the third light-emitting device being configured to emit a third color light; The optical control layer includes a third control unit, which is disposed corresponding to the third light-emitting device; The thickness of the third control unit ranges from 5 nm to 15 nm.

16. The light-emitting substrate according to claim 14, characterized in that, Also includes: A light extraction layer; the light extraction layer includes: a third light extraction part, the third light extraction part being disposed corresponding to the third light-emitting device; The thickness of the third light extraction section ranges from 55 nm to 85 nm.

17. The light-emitting substrate according to claim 15 or 16, characterized in that, The third light-emitting device further includes: a third hole transport layer; the third hole transport layer is located between the first electrode of the third light-emitting device and the light-emitting layer of the third light-emitting device; or, the third hole transport layer is located between the light-emitting layer of the third light-emitting device and the second electrode of the third light-emitting device; The thickness of the third hole transport layer ranges from 20 nm to 40 nm.

18. The light-emitting substrate according to claim 15, characterized in that, The third light-emitting device further includes: a third electron transport layer; the third electron transport layer is located between the first electrode of the third light-emitting device and the light-emitting layer of the third light-emitting device; or, the third electron transport layer is located between the light-emitting layer of the third light-emitting device and the second electrode of the third light-emitting device; The thickness of the third electron transport layer ranges from 40 nm to 80 nm.

19. The light-emitting substrate according to claim 15, characterized in that, The third light-emitting device further includes: a third hole transport layer and a third electron transport layer; The first electrode, the third hole transport layer, the light-emitting layer, the third electron transport layer, and the second electrode of the third light-emitting device are arranged in a direction away from the substrate; or, the first electrode, the third electron transport layer, the light-emitting layer, the third hole transport layer, and the second electrode of the third light-emitting device are arranged in a direction away from the substrate. The thickness of the third hole transport layer ranges from 20 nm to 40 nm, and the thickness of the third electron transport layer ranges from 40 nm to 80 nm.

20. The light-emitting substrate according to any one of claims 1 to 19, characterized in that, The light transmittance of the transparent reflective layer is greater than or equal to 60% and less than or equal to 90%; and / or, Within the wavelength range of 400nm to 700nm, the light transmittance of the second electrode is greater than or equal to 85%.

21. The light-emitting substrate according to claim 20, characterized in that, The materials of the transparent reflective layer and the second electrode are independently selected from at least one of gold, silver, magnesium-silver alloy, molybdenum oxide, indium tin oxide, indium zinc oxide, indium tin zinc oxide, indium gallium oxide, and aluminum-doped zinc oxide.

22. A light-emitting device, characterized in that, include: The light-emitting substrate as described in any one of claims 1 to 21; It also includes a driver chip for driving the light-emitting substrate to emit light.

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