Aging screening device and method
By combining a DC power supply module and a square wave signal generator to drive the high-frequency square wave signal, the voltage fluctuations in actual application scenarios are simulated, solving the problem that existing technologies cannot effectively screen unreliable GaN devices in high-frequency circuits, and improving the reliability and quality of GaN devices.
Patent Information
- Application Number
- CN202511380917.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-25
- Publication Date
- 2026-02-06
AI Technical Summary
Existing aging screening devices cannot effectively screen out unreliable GaN devices in high-frequency circuit applications, resulting in GaN devices still having reliability issues after screening.
A DC power supply module is combined with a square wave signal generator to convert the signal into a high-frequency square wave to drive the aging test module. This module is used to test GaN devices and simulate voltage fluctuations in real-world application scenarios, including aging tests at 140–160°C for 8–48 hours.
This improves the quality and reliability of GaN devices in high-frequency circuit applications. By simulating voltage fluctuations in real-world application scenarios, devices in the early stages of failure are eliminated, ensuring that the devices enter a stable phase.
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Figure CN121476876A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present disclosure relates to the field of semiconductor, and in particular, to an aging screening device and method. BACKGROUND
[0002] The aging screening device is used for aging test of GaN devices after the GaN devices are manufactured, so as to screen out unqualified GaN devices.
[0003] The related technology provides an aging screening device, which comprises a direct-current power supply module and an aging test module, a voltage input module is electrically connected with the aging test module, and the voltage input module provides direct-current power for the aging test module.
[0004] It is found through actual use of the above-mentioned aging screening device that the above-mentioned aging screening device can only screen out part of unqualified GaN devices, so that the GaN devices after screening still have reliability problems. SUMMARY
[0005] The embodiment of the present disclosure provides an aging screening device and method, which can simulate voltage to remove unqualified GaN devices in actual application, and improve the reliability of GaN devices. The technical solution is as follows:
[0006] In one aspect, an aging screening device is provided, which comprises a direct-current power supply module, a square wave signal generator and an aging test module.
[0007] The direct-current power supply module is electrically connected with the input end of the square wave signal generator, and the output end of the square wave signal generator is electrically connected with the aging test module.
[0008] The direct-current power supply module is used for providing direct-current power.
[0009] The square wave signal generator is used for converting the direct-current power provided by the direct-current power supply module into a high-frequency square wave electrical signal.
[0010] The aging test module is used for testing a to-be-tested GaN device under the driving of the high-frequency square wave electrical signal.
[0011] Optionally, the square wave signal generator is used for converting the direct-current power provided by the direct-current power supply module into a high-frequency square wave electrical signal with a frequency of 100-1000 Hz, a duty cycle of 90-99% and a high voltage of 650 V.
[0012] Optionally, the aging test module comprises:
[0013] An analog circuit is used for providing a use circuit environment of the to-be-tested GaN device for testing.
[0014] a detection circuit for detecting a parameter of the GaN device under test operating in the analog circuit, the parameter being indicative of whether the GaN device under test is failed.
[0015] Optionally, the aging test module is configured to perform the test in an environment of 140-160℃ for 8-48 hours.
[0016] In another aspect, there is provided an aging screening method, the method comprising:
[0017] a direct current power module for providing direct current;
[0018] a square wave signal generator for converting the direct current provided by the direct current power module into a high-frequency square wave electrical signal;
[0019] an aging test module for testing a GaN device under test driven by the high-frequency square wave electrical signal.
[0020] Optionally, the square wave signal generator for converting the direct current provided by the direct current power module into a high-frequency square wave electrical signal comprises:
[0021] the square wave signal generator for converting the direct current provided by the direct current power module into a high-frequency square wave electrical signal with a frequency of 100-1000 Hz, a duty cycle of 90-99%, and a high voltage of 650 V.
[0022] Optionally, the aging test module for testing a GaN device under test driven by the high-frequency square wave electrical signal comprises:
[0023] an analog circuit in the aging test module for providing a usage circuit environment of the GaN device under test for testing;
[0024] a detection circuit in the aging test module for detecting a parameter of the GaN device under test operating in the analog circuit, the parameter being indicative of whether the GaN device under test is failed.
[0025] Optionally, the analog circuit in the aging test module for providing a usage circuit environment of the GaN device under test for testing comprises:
[0026] performing the test in an environment of 140-160℃ for 8-48 hours.
[0027] Optionally, the aging test module for testing a GaN device under test driven by the high-frequency square wave electrical signal comprises:
[0028] performing a first test on the GaN device under test in an initial normal temperature state to obtain an initial parameter;
[0029] After the aging time, a second test is performed on the GaN device under test to obtain an aging parameter;
[0030] Based on the initial parameter and the aging parameter, it is determined whether the GaN device under test is failed.
[0031] Optionally, the initial parameter and the aging parameter include:
[0032] A drain-source saturation current Idss, a gate-source reverse saturation current Igss, a threshold voltage Vth, and an on-resistance Ron.
[0033] The technical scheme provided by the embodiments of the present disclosure has the following beneficial effects:
[0034] In the embodiments of the present disclosure, the direct current power supply module is electrically connected with the input end of the square wave signal generator, and the direct current power supply module can convert the direct current output by the direct current power supply module into a high-frequency square wave electrical signal; the output end of the square wave signal generator is electrically connected with the aging test module, and the high-frequency square wave electrical signal is input to the aging test module, thereby simulating the voltage fluctuation in the actual application scenario, making the aging condition consistent with the actual use condition of the GaN device, and enabling the unreliable GaN device in the high-frequency circuit application to be removed, thereby improving the quality and reliability of the GaN device application. BRIEF DESCRIPTION OF DRAWINGS
[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the drawings needed to be used in the embodiments description. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art without creative labor.
[0036] Figure 1 is a schematic diagram of failure rates of GaN devices at different stages provided by the embodiments of the present disclosure;
[0037] Figure 2 is a module diagram of an aging screening device provided by the embodiments of the present disclosure;
[0038] Figure 3 is a flowchart of a GaN device aging screening method provided by the embodiments of the present disclosure;
[0039] Figure 4 is a flowchart of a GaN device aging screening method provided by the embodiments of the present disclosure.
[0040] The following are the signs of the drawings:
[0041] 10: direct current power supply module;
[0042] 20: square wave signal generator;
[0043] 30: aging test module;
[0044] 31: analog circuit;
[0045] 32: detection circuit. DETAILED DESCRIPTION
[0046] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure embodiments will be further described in detail below with reference to the drawings.
[0047] The aging screening condition provided by the related art is to age GaN devices under high-voltage direct current for 8-48 hours, and the voltage of the aging screening device remains unchanged in the aging screening process of the GaN device. However, in actual application, the GaN device is applied in a high-frequency circuit, and under the high-frequency circuit, low voltage and high voltage are high-frequency alternations. Therefore, the screening condition provided by the related art does not match the condition in the actual application process.
[0048] Therefore, the aging screening condition provided by the related art can only screen and remove a part of unstable devices under high voltage, but the condition voltage in actual application is fluctuating, and the aging screening condition provided by the related art may not be able to remove the weak devices in actual application.
[0049] Figure 1 is a schematic diagram of failure rates of GaN devices at different stages provided by the present disclosure embodiments. As shown in Figure 1 , the horizontal coordinate is the running time of the GaN device, and the vertical coordinate is the failure rate of the GaN device. As can be seen from the figure, the failure rate of the GaN device is higher in the early failure stage and the wear-out stage, and is lower and stable in the stable stage.
[0050] The present disclosure embodiments provide an aging screening device and method, and the purpose of the aging screening is to make the GaN device pass through the early failure stage to the stable stage of the service life, and to screen out the early failure GaN device.
[0051] Figure 2 is a module diagram of an aging screening device provided by the present disclosure embodiments, referring to Figure 2 , the aging screening device comprises a direct current power supply module 10, a square wave signal generator 20 and an aging test module 30.
[0052] The direct current power supply module 10 is electrically connected with the input end of the square wave signal generator 20, and the output end of the square wave signal generator 20 is electrically connected with the aging test module 30.
[0053] The direct-current power supply module 10 is configured to provide direct-current power, and the square wave signal generator 20 is configured to convert the direct-current power provided by the direct-current power supply module 10 into a high-frequency square wave electrical signal.
[0054] The aging test module 30 is configured to test the GaN device under the driving of the high-frequency square wave electrical signal.
[0055] In the embodiment of the present disclosure, the direct-current power supply module is electrically connected to the input end of the square wave signal generator, and the direct-current power output by the direct-current power supply module can be converted into a high-frequency square wave electrical signal; the output end of the square wave signal generator is electrically connected to the aging test module, and the high-frequency square wave electrical signal is input to the aging test module, so as to simulate the voltage fluctuation in the actual application scenario, so that the aging condition is consistent with the actual use condition of the GaN device, and the GaN device that is unreliable in the high-frequency circuit application can be eliminated, and the quality and reliability of the GaN device application can be improved.
[0056] In the embodiment of the present disclosure, the output end of the direct-current power supply module 10 outputs a positive current, and the input end receives a negative current; the input end of the square wave signal generator 20 receives a positive current, and the output end outputs a positive current; and the input end of the aging test module 30 receives a positive current, and the output end outputs a negative current.
[0057] In the embodiment of the present disclosure, the voltage provided by the direct-current power supply module 10 can be 650V direct-current power.
[0058] In the embodiment of the present disclosure, the direct-current power supply module 10 can be an FTP3000 direct-current stabilized power supply. In other embodiments, the direct-current power supply module 10 can also be other models of direct-current stabilized power supplies.
[0059] In the embodiment of the present disclosure, the square wave signal generator 20 is configured to convert the direct-current power provided by the direct-current power supply module 10 into a high-frequency square wave electrical signal with a frequency of 100-1000Hz, a duty cycle of 90-99%, and a high voltage of 650V.
[0060] In this implementation manner, the frequency of the high-frequency square wave electrical signal is 100-1000Hz, which meets the simulation of the voltage high-frequency fluctuation existing in the actual application; the duty cycle of the high-frequency square wave electrical signal is 90-99%, that is, the high-voltage part occupies a long time, and the simulation of the stable high-voltage scene can also be ensured. That is, through the high-frequency square wave electrical signal, the simulation in the two scenes of high-frequency fluctuation and stable high-voltage can be realized, and the quality and reliability of the GaN device application can be improved.
[0061] The duty cycle is 90%-99%, which means that the high-frequency square wave electrical signal includes alternating 650V high voltage and 0V low voltage; the high-voltage time ratio is 90-99%, and the low-voltage time ratio is 1-10%.
[0062] In other embodiments, the frequency and duty cycle of the high-frequency square wave electrical signal can also be adjusted accordingly as needed.
[0063] Exemplarily, the square wave signal generator 20 is configured to convert the direct current provided by the direct current power supply module 10 into a high-frequency square wave electrical signal with a frequency of 1000 Hz, a duty cycle of 95%, and a high voltage of 650 V.
[0064] In other embodiments, the current output frequency and duty cycle of the square wave signal generator 20 can also be adjusted accordingly with the voltage.
[0065] In the embodiments of the present disclosure, the input end of the direct current power supply module 10 is connected to a commercial power supply or a direct current bus, so as to convert the output of the commercial power supply or the direct current bus into multiple high-precision and programmable direct current outputs.
[0066] In the embodiments of the present disclosure, the square wave signal generator 20 can be a Tektronix AFG31000 signal generator. In other embodiments, the square wave signal generator 20 can also be other types of square wave signal generators.
[0067] As shown in Figure 2 the output end of the direct current power supply module 10 includes a positive output end and a negative output end, the input end of the aging test module 30 includes a positive input end and a negative input end, the positive output end of the direct current power supply module 10 is electrically connected to the positive input end of the aging test module 30, the negative output end of the direct current power supply module 10 is electrically connected to the negative input end of the aging test module 30, and the square wave signal generator 20 is electrically connected between the positive output end of the direct current power supply module 10 and the positive input end of the aging test module 30.
[0068] In the embodiments of the present disclosure, the aging test module 30 includes:
[0069] The analog circuit 31 is configured to provide a circuit of a use environment of the GaN device to be tested for testing. For example, for the GaN device to be tested applied in a power circuit or a radio frequency circuit, the analog circuit 31 is a circuit simulating the power circuit or the radio frequency circuit, and the GaN device to be tested is connected through an interface to realize the aging test and screening of the GaN device to be tested.
[0070] The detection circuit 32 is configured to detect a parameter of the GaN device to be tested working in the analog circuit 31, and the parameter is used to indicate whether the GaN device to be tested is failed.
[0071] In the embodiments of the present disclosure, the detection circuit 32 is electrically connected to the analog circuit 31 to realize the measurement of the parameter of the GaN device to be tested.
[0072] In the implementation, the aging test module comprises an analog circuit and a detection circuit, the analog circuit can simulate a working use environment of the GaN device for testing, and the detection circuit can detect whether the GaN device is invalid, thereby completing aging screening.
[0073] In the embodiment of the present disclosure, the detection circuit 32 is configured to perform a first test on the GaN device to be tested in an initial normal temperature state to obtain an initial parameter.
[0074] After the aging time, a second test is performed on the GaN device to be tested to obtain an aging parameter.
[0075] Based on the initial parameter and the aging parameter, it is determined whether the GaN device to be tested is invalid. For example, the initial parameter and the aging parameter comprise:
[0076] A drain-source saturation current Idss, a gate-source reverse saturation current Igss, a threshold voltage Vth, and an on-resistance Ron.
[0077] In the embodiment of the present disclosure, the analog circuit 31 can be an analog circuit in a high-temperature bias test system GK-HTXB-C16.
[0078] In the embodiment of the present disclosure, the detection circuit 32 can be a detection circuit in the high-temperature bias test system GK-HTXB-C16.
[0079] In other embodiments, the analog circuit 31 and the detection circuit 32 can also be other types of analog and detection circuits.
[0080] In the embodiment of the present disclosure, the aging test module 30 is configured to perform a test in an environment of 140-160℃, and the aging time is 8-48h.
[0081] In the implementation, the temperature of 140-160℃ can accelerate the life of the aging GaN device and shorten the test time; and the aging time of the GaN device of 8-48h can make the GaN device pass through an early stage of easy failure and enter a stable stage.
[0082] In the embodiment of the present disclosure, the GaN device can be a transistor.
[0083] Figure 3 is a flow chart of a GaN device aging screening method provided by the embodiment of the present disclosure. Referring to Figure 3 , the method steps comprise:
[0084] S11, a direct current power module is used to provide direct current.
[0085] S12, a square wave signal generator is used to convert the direct current provided by the direct current power supply module into a high-frequency square wave electrical signal.
[0086] S13, an aging test module is used to test the GaN device to be tested under the driving of the high-frequency square wave electrical signal.
[0087] In the embodiment of the present disclosure, the direct current power supply module is electrically connected with the input end of the square wave signal generator, and the direct current output by the direct current power supply module can be converted into a high-frequency square wave electrical signal; the output end of the square wave signal generator is electrically connected with the aging test module, and the high-frequency square wave electrical signal is input to the aging test module, simulating the voltage fluctuation in the actual application scenario, so that the aging conditions and the actual use conditions of the GaN device are consistent, and the unreliable devices of the GaN device in the high-frequency circuit application can be eliminated, and the quality and reliability of the GaN device application can be improved.
[0088] Figure 4 is a flow chart of a GaN device aging screening method provided by the embodiment of the present disclosure. Referring to Figure 4 , the method steps include:
[0089] S21, a direct current power supply module is used to provide direct current.
[0090] In the embodiment of the present disclosure, the voltage provided by the direct current power supply module can be 650V direct current.
[0091] Exemplarily, the direct current with a voltage of 650V is the voltage used by the GaN device in the embodiment of the present disclosure; in other embodiments, the voltage can also be adjusted accordingly.
[0092] S22, a square wave signal generator is used to convert the direct current provided by the direct current power supply module into a high-frequency square wave electrical signal.
[0093] In the embodiment of the present disclosure, the square wave signal generator is used to convert the direct current provided by the direct current power supply module into a high-frequency square wave electrical signal with a frequency of 100-1000Hz, a duty cycle of 90-99%, and a high voltage of 650V.
[0094] In this implementation manner, the frequency of the high-frequency square wave electrical signal is 100-1000Hz, which meets the simulation of the voltage high-frequency fluctuation existing in the actual application; the duty cycle of the high-frequency square wave electrical signal is 90-99%, that is, the high-voltage part occupies a long time, and the simulation of the stable high-voltage scene can also be ensured. That is, through the high-frequency square wave electrical signal, the simulation in the two scenes of high-frequency fluctuation and stable high-voltage can be realized, and the quality and reliability of the GaN device application can be improved.
[0095] The duty cycle is 90% to 99%, which means that the high-frequency square wave electrical signal includes 650V high voltage and 0V low voltage alternately; the high voltage time ratio is 90% to 99%, and the low voltage time ratio is 1% to 10%.
[0096] In other embodiments, the frequency and duty cycle of the high-frequency square wave electrical signal can also be adjusted accordingly as needed.
[0097] S23, a first test is performed on the GaN device under test in an initial normal temperature state to obtain initial parameters.
[0098] In the embodiments of the present disclosure, the initial parameters include drain-source saturation current Idss, gate-source reverse saturation current Igss, threshold voltage Vth, and on-resistance Ron.
[0099] In this implementation, the drain-source saturation current Idss can directly screen out early leakage defects of the GaN device; the gate-source reverse saturation current Igss can directly reflect the integrity of the gate medium; the threshold voltage Vth can ensure that the driving voltage window of the same batch of tubes is consistent, avoiding uneven current in parallel or bridge arm applications; and the on-resistance Ron directly determines the conduction loss and temperature rise of the GaN device.
[0100] The first test can lock the lowest loss point of the GaN device.
[0101] S24, after a certain aging time, a second test is performed on the GaN device under test to obtain aging parameters.
[0102] In the embodiments of the present disclosure, aging is performed in an environment of 140-160°C, and the aging time is 8-48h.
[0103] In this implementation, aging in an environment of 140-160°C can accelerate the life of the aged GaN device and shorten the test time; and the aging time of 8-48h can make the GaN device pass through the early stage of easy failure and enter the stable stage.
[0104] For example, the test is performed in an environment of 150°C, and the aging time is 40h.
[0105] In the embodiments of the present disclosure, the aging parameters and the initial parameters are the same, that is, the aging parameters include the drain-source saturation current Idss, the gate-source reverse saturation current Igss, the threshold voltage Vth, and the on-resistance Ron.
[0106] S25, based on the initial parameters and the aging parameters, it is determined whether the GaN device under test is failed.
[0107] In this implementation, the parameters of the second test can be compared with the parameters of the first test to determine whether the GaN device is failed.
[0108] For example, the step S25 can include:
[0109] determining whether the drain-source saturation current Idss, the gate-source reverse saturation current Igss, the threshold voltage Vth, and the on-resistance Ron in the initial parameters are within a normal range;
[0110] For example, when the drain-source saturation current Idss is 5 μA, the gate-source reverse saturation current Igss is 50 nA, the threshold voltage Vth is 2 V, and the on-resistance Ron is 150 mΩ, it is determined that the initial parameters are within the normal range.
[0111] determining whether the ratio of each of the drain-source saturation current Idss, the gate-source reverse saturation current Igss, the threshold voltage Vth, and the on-resistance Ron in the initial parameters to each of the drain-source saturation current Idss, the gate-source reverse saturation current Igss, the threshold voltage Vth, and the on-resistance Ron in the initial parameters is within a normal range.
[0112] For example, when the ratio of the drain-source saturation current Idss in the initial parameters to the drain-source saturation current Idss in the initial parameters is less than 10, the ratio of the gate-source reverse saturation current Igss in the initial parameters to the gate-source reverse saturation current Igss in the initial parameters is less than 10, the ratio of the threshold voltage Vth in the initial parameters to the threshold voltage Vth in the initial parameters is 0.8 to 1.2, and the ratio of the on-resistance Ron in the initial parameters to the on-resistance Ron in the initial parameters is 0.8 to 1.2, it is determined that each of the parameters is within the normal range.
[0113] When any of the parameters in the above two steps is not within the normal range, it is determined that the GaN device is failed.
[0114] For example, when the drain-source saturation current Idss is 5 μA, the gate-source reverse saturation current Igss is 50 nA, the threshold voltage Vth is 2 V, and the on-resistance Ron is 150 mΩ, it is determined that the initial parameters are within the normal range.
[0115] For example, when the drain-source saturation current Idss is 5 μA, the gate-source reverse saturation current Igss is 50 nA, the threshold voltage Vth is 2 V, and the on-resistance Ron is 150 mΩ, it is determined that the initial parameters are within the normal range.
[0116] For example, when the drain-source saturation current Idss is 5 μA, the gate-source reverse saturation current Igss is 50 nA, the threshold voltage Vth is 2 V, and the on-resistance Ron is 150 mΩ, it is determined that the initial parameters are within the normal range.
[0117] If the parameters in the second step are not in the normal range, it is determined that the GaN device is invalid.
[0118] For example, the initial parameters are as follows: the drain-source saturation current Idss is 5 μA, the gate-source reverse saturation current Igss is 50 nA, the threshold voltage Vth is 2 V, and the on-resistance Ron is 150 mΩ. It is shown that the initial parameters are in the normal range.
[0119] The aging parameters are as follows: the drain-source saturation current Idss is 3 μA, the gate-source reverse saturation current Igss is 45 nA, the threshold voltage Vth is 1.8 V, and the on-resistance Ron is 160 mΩ.
[0120] Therefore, the ratio of the drain-source saturation current Idss is 3 / 5 = 0.6, the ratio of the gate-source reverse saturation current Igss is 45 / 50 = 0.9, the ratio of the threshold voltage Vth is 1.8 / 2 = 0.9, and the ratio of the on-resistance Ron is 160 / 150 = 1.1. (The calculation result is rounded to one decimal place.) It is shown that all the parameters are in the normal range.
[0121] If the parameters in the first step and the second step are in the normal range, it is determined that the GaN device is qualified.
[0122] The above description is only optional embodiments of the present disclosure, and is not intended to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.
Claims
1. An aging screening device, characterized in that, The device includes: a DC power supply module (10), a square wave signal generator (20), and an aging test module (30); The DC power supply module (10) is electrically connected to the input terminal of the square wave signal generator (20), and the output terminal of the square wave signal generator (20) is electrically connected to the aging test module (30). The DC power module (10) is used to provide DC power; The square wave signal generator (20) is used to convert the DC power supplied by the DC power module (10) into a high-frequency square wave signal; The aging test module (30) is used to test the GaN device under test under the drive of the high-frequency square wave electrical signal.
2. The aging screening device according to claim 1, characterized in that, The square wave signal generator (20) is used to convert the DC power provided by the DC power module (10) into a high-frequency square wave electrical signal with a frequency of 100-1000Hz, a duty cycle of 90-99%, and a voltage of 650V.
3. The aging screening device according to claim 1 or 2, characterized in that, The aging test module (30) includes: Analog circuit (31) is used to provide the operating circuit environment for the GaN device under test for testing; The detection circuit (32) is used to detect the parameters of the GaN device under test operating in the analog circuit (31), the parameters being used to indicate whether the GaN device under test has failed.
4. The aging screening device according to claim 1 or 2, characterized in that, The aging test module (30) is used to conduct tests in an environment of 140-160℃ for 8-48 hours.
5. An aging screening method, characterized in that, The method includes: DC power is provided by a DC power module; A square wave signal generator is used to convert the DC power supplied by the DC power module into a high-frequency square wave signal. An aging test module was used to test the GaN device under test under the drive of the high-frequency square wave electrical signal.
6. The method according to claim 5, characterized in that, The step of using a square wave signal generator to convert the DC power supplied by the DC power module into a high-frequency square wave signal includes: The square wave signal generator is used to convert the DC power supplied by the DC power module into a high-frequency square wave signal with a frequency of 100-1000Hz, a duty cycle of 90-99%, and a voltage of 650V.
7. The method according to claim 5 or 6, characterized in that, The aging test module is used to test the GaN device under test under the drive of the high-frequency square wave electrical signal, including: The analog circuit in the aging test module is used to provide the circuit environment for testing the GaN device under test. The detection circuit in the aging test module is used to detect the parameters of the GaN device under test operating in the analog circuit. The parameters are used to indicate whether the GaN device under test has failed.
8. The method according to claim 7, characterized in that, The use of the analog circuit in the aging test module to provide the operating circuit environment for the GaN device under test for testing includes: The test was conducted at an environment of 140–160℃, with an aging time of 8–48 hours.
9. The method according to claim 5 or 6, characterized in that, The aging test module is used to test the GaN device under test under the drive of the high-frequency square wave electrical signal, including: The GaN device under test was tested for the first time under initial room temperature conditions to obtain initial parameters; After the aging period, the GaN device under test was tested a second time to obtain the aging parameters; Based on the initial parameters and the aging parameters, it is determined whether the GaN device under test has failed.
10. The method according to claim 9, characterized in that, The initial parameters and the aging parameters include: Drain-source saturation current Idss, gate-source reverse saturation current Igss, threshold voltage Vth, on-resistance Ron.