Method and device for determining aging parameter of physical model, equipment and medium

Abstract

The invention relates to an aging parameter determination method and device of a physical model, equipment and a medium. The method comprises the following steps: acquiring a voltage characteristic curve of a target device in a physical model at a constant temperature and different voltage stresses; determining electric field acceleration data of the target device according to the voltage characteristic curve; the electric field acceleration data is used for representing the influence degree of voltage stress on the aging speed of the target device; acquiring a temperature characteristic curve of the target device under the last voltage stress and different temperature values; the temperature characteristic curve is used for representing the incidence relation between the application time of different temperatures and the corresponding temperature values; determining target activation energy of the target device according to the temperature characteristic curve; the target activation energy is used for representing an energy upper limit value required by aging of the target device; and determining the aging time of the target device according to the target activation energy and the electric field acceleration data. By adopting the method, the aging parameters of the physical model can be accurately determined.

Description

Technical Field

[0001] This application relates to the field of semiconductor device reliability testing technology, and in particular to a method, apparatus, device and medium for determining aging parameters of a physical model. Background Technology

[0002] With the continuous development of integrated circuit manufacturing processes and the shrinking of device dimensions, the negative bias temperature instability (NBTI) effect of p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) has become increasingly significant, becoming one of the key factors affecting the long-term reliability of devices. The NBTI effect mainly manifests as a degradation of electrical characteristics, such as threshold voltage drift and transconductance decrease, under high temperature and negative gate stress conditions, severely impacting circuit performance and lifespan. To accurately assess and predict the aging behavior of devices, a reliable aging physical model needs to be established, and key parameters such as the electric field acceleration factor and activation energy need to be extracted.

[0003] In traditional techniques, the extraction of NBTI aging physics model parameters is typically based on methods recommended by the Joint Electron Device Engineering Council (JEDEC) standards. This requires conducting aging tests on multiple pMOSFET devices under different voltage stresses and temperature conditions. Specifically, when extracting the electric field acceleration factor, the same temperature but different gate voltage stresses must be applied to multiple devices; when extracting the activation energy, the same gate voltage but different temperature stresses must be applied to another batch of devices. The model parameters are obtained by fitting the degradation data separately.

[0004] However, due to manufacturing process variations and initial performance differences among different devices, degradation data from multiple devices may be scattered, affecting the accuracy of model parameters. Furthermore, each stress condition requires repeated testing with multiple samples, resulting in high sample consumption and significantly increased testing time. Additionally, it is impossible to extract all parameters from a single device, limiting the efficiency of model validation and optimization. Therefore, it is necessary to provide a method that can efficiently and accurately extract NBTI aging physical model parameters from a single device to overcome the shortcomings of traditional methods. Summary of the Invention

[0005] Therefore, it is necessary to provide a method, apparatus, equipment, and medium for determining aging parameters of a physical model that can be accurately extracted, addressing the aforementioned technical problems.

[0006] Firstly, this application provides a method for determining aging parameters of a physical model, including:

[0007] Obtain the voltage characteristic curves of the target device in the physical model under constant temperature and different voltage stresses; the voltage characteristic curves are used to characterize the correlation between the application time of different voltage stresses and the corresponding voltage stresses;

[0008] Based on the voltage characteristic curve, the electric field acceleration data of the target device is determined; the electric field acceleration data is used to characterize the degree of influence of voltage stress on the aging rate of the target device.

[0009] Obtain the temperature characteristic curves of the target device under the last voltage stress and different temperature values; the temperature characteristic curves are used to characterize the correlation between the application time at different temperatures and the corresponding temperature values;

[0010] Based on the temperature characteristic curve, the target activation energy of the target device is determined; the target activation energy is used to characterize the upper limit of energy required to induce aging of the target device.

[0011] The aging time of the target device is determined based on the target activation energy and electric field acceleration data.

[0012] In one embodiment, the electric field acceleration data of the target device is determined based on the voltage characteristic curve, including:

[0013] For each iteration, the first equivalent time of the corresponding voltage stress under the current acceleration data is determined based on different voltage stresses, the application time of the corresponding voltage stress, the last voltage stress, and the current acceleration data; wherein, the current acceleration data under the first iteration is the preset initial acceleration data;

[0014] Determine the first positional relationship between the equivalent voltage characteristic curve formed by each first equivalent time and corresponding voltage stress and the preset voltage baseline;

[0015] If the first positional relationship is different, update the current acceleration data according to the first positional relationship, and return to the determination step of executing the first equivalent time, until the first positional relationship is the same.

[0016] The current acceleration data in the last iteration is used as the electric field acceleration data.

[0017] In one embodiment, based on different voltage stresses, the application time of the corresponding voltage stress, the last voltage stress, and the current acceleration data, a first equivalent time for the corresponding voltage stress under the current acceleration data is determined, including:

[0018] For each voltage stress, the voltage acceleration factor is determined based on the voltage stress, the last voltage stress, and the current acceleration data. The voltage acceleration factor is used to characterize the aging rate under voltage stress relative to the acceleration factor under the last voltage stress.

[0019] The first equivalent time of the corresponding voltage stress under the current acceleration data is determined by multiplying the application time of the voltage stress by the voltage acceleration factor.

[0020] In one embodiment, updating the current acceleration data based on the first positional relationship includes:

[0021] If the equivalent voltage characteristic curve is above the preset voltage baseline, reduce the current acceleration data;

[0022] If the equivalent voltage characteristic curve is below the preset voltage baseline, increase the current acceleration data.

[0023] In one embodiment, determining the target activation energy of the target device based on the temperature characteristic curve includes:

[0024] For each iteration, based on different temperature values, the application time of the corresponding temperature value, the last temperature value, and the current activation energy, the second equivalent time of the corresponding temperature value under the current activation energy is determined; wherein, the current activation energy under the first iteration is the preset initial activation energy;

[0025] Determine the second positional relationship between the equivalent temperature characteristic curve formed by each second equivalent time and corresponding temperature value and the preset temperature baseline;

[0026] If the second positional relationship is different, update the current activation energy according to the second positional relationship and return to the determination step of the second equivalent time until the second positional relationship is the same.

[0027] The current activation energy in the last iteration is taken as the target activation energy.

[0028] In one embodiment, determining the second equivalent time for a given temperature value at the current activation energy based on different temperature values, the application time of the corresponding temperature value, the last temperature value, and the current activation energy includes:

[0029] For each temperature value, determine the difference between the current temperature value and the last temperature value;

[0030] The temperature acceleration factor is determined by multiplying the conversion temperature value by the difference; the conversion temperature value is the ratio between the current activation energy and the preset Boltzmann constant.

[0031] The second equivalent time for the corresponding temperature value at the current activation energy is determined by multiplying the application time of the temperature value by the temperature acceleration factor.

[0032] Secondly, this application also provides an apparatus for determining aging parameters of a physical model, comprising:

[0033] The first acquisition module is used to acquire the voltage characteristic curves of the target device in the physical model under constant temperature and different voltage stresses; the voltage characteristic curves are used to characterize the correlation between the application time of different voltage stresses and the corresponding voltage stresses;

[0034] The first determining module is used to determine the electric field acceleration data of the target device based on the voltage characteristic curve; the electric field acceleration data is used to characterize the degree of influence of voltage stress on the aging rate of the target device.

[0035] The second acquisition module is used to acquire the temperature characteristic curves of the target device under the last voltage stress and different temperature values; the temperature characteristic curves are used to characterize the correlation between the application time at different temperatures and the corresponding temperature values.

[0036] The second determining module is used to determine the target activation energy of the target device based on the temperature characteristic curve; the target activation energy is used to characterize the upper limit of energy required to induce aging of the target device.

[0037] The aging determination module is used to determine the aging time of the target device based on the target activation energy and electric field acceleration data.

[0038] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0039] Obtain the voltage characteristic curves of the target device in the physical model under constant temperature and different voltage stresses; the voltage characteristic curves are used to characterize the correlation between the application time of different voltage stresses and the corresponding voltage stresses;

[0040] Based on the voltage characteristic curve, the electric field acceleration data of the target device is determined; the electric field acceleration data is used to characterize the degree of influence of voltage stress on the aging rate of the target device.

[0041] Obtain the temperature characteristic curves of the target device under the last voltage stress and different temperature values; the temperature characteristic curves are used to characterize the correlation between the application time at different temperatures and the corresponding temperature values;

[0042] Based on the temperature characteristic curve, the target activation energy of the target device is determined; the target activation energy is used to characterize the upper limit of energy required to induce aging of the target device.

[0043] The aging time of the target device is determined based on the target activation energy and electric field acceleration data.

[0044] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the following steps:

[0045] Obtain the voltage characteristic curves of the target device in the physical model under constant temperature and different voltage stresses; the voltage characteristic curves are used to characterize the correlation between the application time of different voltage stresses and the corresponding voltage stresses;

[0046] Based on the voltage characteristic curve, the electric field acceleration data of the target device is determined; the electric field acceleration data is used to characterize the degree of influence of voltage stress on the aging rate of the target device.

[0047] Obtain the temperature characteristic curves of the target device under the last voltage stress and different temperature values; the temperature characteristic curves are used to characterize the correlation between the application time at different temperatures and the corresponding temperature values;

[0048] Based on the temperature characteristic curve, the target activation energy of the target device is determined; the target activation energy is used to characterize the upper limit of energy required to induce aging of the target device.

[0049] The aging time of the target device is determined based on the target activation energy and electric field acceleration data.

[0050] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, performs the following steps:

[0051] Obtain the voltage characteristic curves of the target device in the physical model under constant temperature and different voltage stresses; the voltage characteristic curves are used to characterize the correlation between the application time of different voltage stresses and the corresponding voltage stresses;

[0052] Based on the voltage characteristic curve, the electric field acceleration data of the target device is determined; the electric field acceleration data is used to characterize the degree of influence of voltage stress on the aging rate of the target device.

[0053] Obtain the temperature characteristic curves of the target device under the last voltage stress and different temperature values; the temperature characteristic curves are used to characterize the correlation between the application time at different temperatures and the corresponding temperature values;

[0054] Based on the temperature characteristic curve, the target activation energy of the target device is determined; the target activation energy is used to characterize the upper limit of energy required to induce aging of the target device.

[0055] The aging time of the target device is determined based on the target activation energy and electric field acceleration data.

[0056] The aforementioned physical model's aging parameter determination method, apparatus, equipment, and medium achieve precise quantification of device aging behavior by extracting electric field acceleration data and target activation energy step-by-step: First, voltage characteristic curves are obtained at a constant temperature to analyze the influence of different voltage stresses on the aging rate, thus obtaining electric field acceleration data; subsequently, temperature characteristic curves are obtained under a fixed voltage stress to analyze the mechanism of temperature's effect on aging trigger energy, determining the target activation energy; finally, based on the dual acceleration effect of electric field and temperature, a comprehensive aging model is established to accurately predict device aging time. This method effectively overcomes the limitations of parameter interference in traditional methods by separating electrothermal coupling factors, significantly improving the accuracy and reliability of aging prediction and providing a scientific basis for device lifetime assessment. Attached Figure Description

[0057] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0058] Figure 1 This embodiment provides an application environment diagram for a method for determining aging parameters of a physical model.

[0059] Figure 2A This is a flowchart illustrating a method for determining aging parameters of a physical model provided in this embodiment.

[0060] Figure 2B This is a schematic diagram of a characteristic curve provided in this embodiment;

[0061] Figure 3A This is a flowchart illustrating a step for obtaining electric field acceleration data in this embodiment;

[0062] Figure 3B This embodiment provides an equivalent stress-time relationship diagram;

[0063] Figure 4A This is a flowchart illustrating a step for obtaining the target activation energy provided in this embodiment;

[0064] Figure 4B This embodiment provides a cumulative equivalent stress-time relationship diagram;

[0065] Figure 5 This is a structural block diagram of an aging parameter determination device for a physical model provided in this embodiment;

[0066] Figure 6 This is an internal structural diagram of a computer device provided in this embodiment. Detailed Implementation

[0067] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0068] The method for determining aging parameters of the physical model provided in this application can be applied to, for example... Figure 1 In the application environment shown, terminal 102 communicates with server 104 via a network. A data storage system can store the data that server 104 needs to process. The data storage system can be integrated onto server 104 or placed in the cloud or on other network servers. The computer device acquires the voltage characteristic curves of the target device in the physical model under constant temperature and different voltage stresses; the voltage characteristic curves characterize the correlation between the application time of different voltage stresses and the corresponding voltage stresses; based on the voltage characteristic curves, the electric field acceleration data of the target device is determined; the electric field acceleration data characterizes the degree of influence of voltage stress on the aging rate of the target device; the temperature characteristic curves of the target device are acquired under the last voltage stress and different temperature values; the temperature characteristic curves characterize the correlation between the application time of different temperatures and the corresponding temperature values; based on the temperature characteristic curves, the target activation energy of the target device is determined; the target activation energy characterizes the upper limit of energy required to induce aging of the target device; based on the target activation energy and the electric field acceleration data, the aging time of the target device is determined. The terminal 102 can be, but is not limited to, various personal computers, laptops, smartphones, tablets, IoT devices, and portable wearable devices. IoT devices can include smart speakers, smart TVs, smart air conditioners, and smart in-vehicle systems. Portable wearable devices can include smartwatches, smart bracelets, and head-mounted devices. The server 104 can be implemented using a standalone server or a server cluster consisting of multiple servers.

[0069] In one exemplary embodiment, such as Figure 2A As shown, a method for determining aging parameters of a physical model is provided, which can be applied to... Figure 1 Taking a computer device as an example, the explanation includes the following steps S201 to S205. Wherein:

[0070] S201 obtains the voltage characteristic curves of the target device in the physical model under constant temperature and different voltage stresses.

[0071] The physical model specifically refers to the mathematical model used to describe and predict the aging behavior of p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) under negative bias temperature instability (NBTI) effects. This model quantifies the aging process by extracting key parameters such as the electric field acceleration factor and activation energy.

[0072] The target device refers to the p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) being tested and evaluated, and its aging behavior and characteristics are the focus of the research.

[0073] Voltage stress refers to the negative bias voltage applied to the gate of the pMOSFET device during the test, which is used to simulate the electric field effect under actual working conditions in order to study its impact on the aging behavior of the device.

[0074] The voltage characteristic curve is a curve characterizing the relationship between the applied voltage stress time and the corresponding voltage stress of a pMOSFET device under different voltage stress conditions. This curve is used to analyze and determine the degree of influence of voltage stress on the aging rate of the device, i.e., electric field acceleration data. The voltage characteristic curve is used to characterize the relationship between the applied voltage stress time and the corresponding voltage stress. For example, ... Figure 2B The schematic diagram of the characteristic curves shown can be used to detect the I of the target device. d -V g The curve of the characteristic.

[0075] In some embodiments, a constant temperature T1 is set (e.g., T1 = 25°C), and NBTI voltage stresses at different constant voltages are applied according to a logarithmically increasing stress-time series. The voltage characteristic curves under the corresponding NBTI voltage stresses are measured; that is, the voltage characteristic curve is measured after each voltage stress, and I is monitored. d -V g The dynamics of the stress time change with NBTI until the last set stress time.

[0076] S202 determines the electric field acceleration data of the target device based on the voltage characteristic curve.

[0077] Among them, electric field acceleration data is a physical parameter characterizing the sensitivity of the aging rate of a pMOSFET device to changes in the gate electric field (or voltage). It is a quantitative exponential coefficient describing the rate at which the threshold voltage drift of the device increases exponentially with the gate stress voltage. In the negative bias temperature instability (NBTI) aging physical model, electric field acceleration data is a key parameter in the following exponential relationship: ΔV th ∝exp(m*V gstress ), where V gstress Here, V represents the gate voltage stress, m represents the electric field acceleration data, and V represents the voltage stress.th This represents the voltage threshold. Electric field acceleration data are used to characterize the impact of voltage stress on the aging rate of the target device.

[0078] In some embodiments, electric field acceleration data of the target device is extracted from the voltage characteristic curve.

[0079] S203 acquires the temperature characteristic curves of the target device under the last voltage stress and different temperature values.

[0080] The temperature characteristic curve, obtained through a step-by-step temperature stress test under constant voltage stress, characterizes the degradation dynamics of the negative bias temperature instability (NBTI) of pMOSFET devices. The temperature characteristic curve illustrates the correlation between the application time at different temperatures and the corresponding temperature values. Specifically, this curve describes the threshold voltage drift (ΔV). th The curve represents the functional relationship between the energy level (Ea) and the accumulated stress time, obtained under a series of continuously varying temperature conditions. This curve provides direct experimental evidence for extracting the activation energy (Ea) parameter from the NBTI aging physical model.

[0081] In some embodiments, the last voltage stress is set to remain constant, and different temperature values ​​are applied according to a logarithmically increasing stress time series, and the temperature characteristic curves at the corresponding temperature values ​​are measured. That is, the temperature characteristic curves are measured once after each change of temperature value until the last set temperature value.

[0082] S204 determines the target activation energy of the target device based on the temperature characteristic curve.

[0083] The target activation energy refers to the activation energy (Ea) extracted from a single pMOSFET device using the aforementioned experimental method, which is essential for the device's own negative bias temperature instability (NBTI) aging process. The target activation energy characterizes the upper limit of energy required to induce aging in the target device. It is a key parameter in the NBTI aging physics model, quantitatively describing the energy barrier height required to induce aging in a specific pMOSFET device, and characterizing the sensitivity of its aging rate to temperature changes.

[0084] In some embodiments, the target activation energy of the target device is directly extracted from the temperature characteristic curve.

[0085] S205 determines the aging time of the target device based on the target activation energy and electric field acceleration data.

[0086] In some embodiments, the first voltage stress of the stepped voltage stress is not a constant temperature stress, but a stepped voltage stress. Therefore, the preceding stepped temperature stress needs to be converted into a constant temperature stress, which is not difficult to achieve by using the "equivalent stress time (t)". effThe algorithm calculates the stress time t for each step of temperature stress. i Converted to the highest temperature T end The following t eff For example, as shown in formula (1) below:

[0087] (1)

[0088] Among them, t eff E is the equivalent stress time. a Let T be the target activation energy, k be the Boltzmann constant, and T be the activation energy. end The last temperature value, T i Let t be the current temperature value, p be the time exponent, and t be the time exponent. i For the time of application.

[0089] It should be noted that, due to the activation energy E a The step-by-step temperature stress has already been extracted. According to formula (1), the stress time t of each step-by-step temperature stress can be obtained. i Converted to the highest temperature T end The following t eff This allows the stepped temperature stress to be equivalent to the stress at the highest temperature T. end The constant temperature stress is then calculated, and m is extracted using the step voltage stress extraction method.

[0090] The aging parameter determination method of the above physical model achieves precise quantification of device aging behavior by extracting electric field acceleration data and target activation energy step by step: First, voltage characteristic curves are obtained at a constant temperature, and the influence of different voltage stresses on the aging rate is analyzed to obtain electric field acceleration data; then, temperature characteristic curves are obtained under a fixed voltage stress, and the mechanism of temperature's effect on aging trigger energy is analyzed to determine the target activation energy; finally, based on the dual acceleration effect of electric field and temperature, a comprehensive aging model is established to accurately predict device aging time. This method effectively overcomes the limitations of parameter interference in traditional methods by separating electrothermal coupling factors, significantly improving the accuracy and reliability of aging prediction and providing a scientific basis for device lifetime assessment.

[0091] Figure 3A This is a flowchart illustrating the steps for obtaining electric field acceleration data in one embodiment. This embodiment refines the steps for determining the electric field acceleration data of the target device based on the voltage characteristic curve in the above embodiment, including the following steps:

[0092] For each iteration, S301 determines the first equivalent time of the corresponding voltage stress under the current acceleration data based on different voltage stresses, the application time of the corresponding voltage stress, the last voltage stress, and the current acceleration data.

[0093] The equivalent time refers to the time under reference stress conditions (such as reference voltage V). ref Reference temperature T ref Under these conditions, the stress produced is higher than that actually applied (such as V). i ,T i The actual time t is experienced below i The time required to achieve the same amount of degradation or damage. The first equivalent time is the starting point of the reference time axis for all time transformations using the "equivalent stress time" algorithm. All degradation data measured under other stress conditions have their stress times converted to equivalent values ​​relative to this "first equivalent time," thus unifying all data points under the same reference condition and forming a continuous degradation curve for extracting model parameters. The current accelerated data in the first iteration is the preset initial accelerated data.

[0094] In some embodiments, based on a preset first equivalent time determination formula (2), the first equivalent time of the corresponding voltage stress under the current acceleration data is determined according to different voltage stresses, the application time of the corresponding voltage stress, the last voltage stress, and the current acceleration data.

[0095] (2)

[0096] Among them, t eff The time of equivalent stress is given by p, where p is the time exponent and t is the time power exponent. i The time to apply the acceleration is m, where m is the current acceleration data and V is V. gstress,i For voltage stress, V gstress,l This is the last voltage stress.

[0097] In some embodiments, for each voltage stress, a voltage acceleration factor for the voltage stress is determined based on the voltage stress, the last voltage stress, and the current acceleration data; a first equivalent time for the corresponding voltage stress under the current acceleration data is determined based on the product between the application time of the voltage stress and the voltage acceleration factor. The voltage acceleration factor characterizes the aging rate under voltage stress relative to the acceleration factor under the last voltage stress.

[0098] For example, for each voltage stress, the difference between the voltage stress and the last voltage stress is determined; the product of the difference and the current acceleration data is used as the voltage acceleration factor of the voltage stress.

[0099] It should be noted that V gstress The higher the temperature (T remains constant), the faster the NBTI degradation rate; at higher V... gstress Under stress time t, the ΔV generated th If it is in the first V gstress Under these conditions, a stress time longer than t is required to produce the same ΔV.th Introducing "equivalent stress time (t)" eff The concept of ")" is defined as follows: at a higher V gstress Under the condition of applying NBTI stress for a time t, a degradation ΔV is produced. th So, in the first V gstress Under these conditions, the same degradation ΔV is produced. th The required time is called the "equivalent stress time (t)". eff )".

[0100] S302 determines the first positional relationship between the equivalent voltage characteristic curve formed by each first equivalent time and corresponding voltage stress and the preset voltage reference line.

[0101] In some embodiments, a first positional relationship is compared between the equivalent voltage characteristic curve formed by each first equivalent time and the corresponding voltage stress and a preset voltage reference line.

[0102] S303 If the first positional relationship is different, update the current acceleration data according to the first positional relationship and return to the determination step of executing the first equivalent time until the first positional relationship is the same.

[0103] In some embodiments, when the equivalent voltage characteristic curve is above the preset voltage reference line, the current acceleration data is decreased; when the equivalent voltage characteristic curve is below the preset voltage reference line, the current acceleration data is increased.

[0104] For example, such as Figure 3B As shown in (a) of the equivalent stress-time relationship diagram, we guess a value of m that is larger than the typical electric field acceleration data range of NBTI, and use formula (2) to convert the actual stress time under the second and subsequent step voltage stresses into t. eff , will t eff By accumulating and adding them together, we get ΔV th The relationship between the cumulative equivalent stress time (i.e., the equivalent voltage characteristic curve) is observed to determine whether it falls within the ΔV at the first voltage. th On the extension of ~t (i.e., the preset voltage reference line). Here, ΔV is calculated for different values ​​of m. th ~t eff The relationship is such that ΔV under step voltage stress only occurs when the value of m equals the true value. th Only then will it fall into the ΔV of the first temperature. th On the extension of ~t. The hollow point in the diagram is ΔV. th ~Accumulated stress time, solid point is ΔV th ~Cumulative equivalent stress time.

[0105] For example, such as Figure 3BAs shown in (b) of the equivalent stress-time relationship diagram, we guess a value of m that is smaller than the typical electric field acceleration data range of NBTI. Using the same analysis method, we observe ΔV th Does the cumulative equivalent stress time (i.e., the equivalent voltage characteristic curve) fall within ΔV at the first voltage? th On the extension line of ~t (i.e., the preset voltage reference line).

[0106] For example, such as Figure 3B As shown in (c) of the equivalent stress-time relationship diagram, based on the above two guesses of m as the boundary, a bisection method is used to gradually find a suitable guess of m, such that ΔV th The cumulative equivalent stress time (i.e., the equivalent voltage characteristic curve) falls exactly on the ΔV of the first voltage. th On the extension of ~t (i.e., the preset voltage baseline), the value of m at this point is the NBTI electric field acceleration data.

[0107] S304 uses the current acceleration data in the last iteration as the electric field acceleration data.

[0108] In some embodiments, an iterative optimization algorithm is used to accurately determine the electric field acceleration data: in each iteration, based on the current acceleration data, the actual application time under different voltage stresses is uniformly converted into the first equivalent time relative to the last voltage stress, and an equivalent voltage characteristic curve is constructed; by judging the positional relationship between this curve and a preset voltage baseline, the acceleration data is intelligently adjusted—the acceleration data is reduced when the curve is above the baseline and increased when it is below, and so on iteratively until the curve coincides with the baseline. This dynamic feedback mechanism effectively solves the error problem caused by initial value deviation in traditional single fitting, and by automatically converging to the optimal solution, it significantly improves the extraction accuracy and reliability of electric field acceleration data, laying a solid foundation for subsequent aging prediction.

[0109] Figure 4A This is a flowchart illustrating the steps for obtaining the target activation energy in one embodiment. This embodiment refines the steps for determining the target activation energy of the target device based on the temperature characteristic curve in the above embodiments, including the following steps:

[0110] For each iteration, S401 determines the second equivalent time of the corresponding temperature value at the current activation energy based on different temperature values, the application time of the corresponding temperature value, the last temperature value, and the current activation energy.

[0111] In the first iteration, the current activation energy is the preset initial activation energy.

[0112] In some embodiments, the second equivalent time is determined based on the second equivalent time determination formula, as shown in the following formula (3), according to different temperature values, the application time of the corresponding temperature value, the last temperature value and the current activation energy, the second equivalent time of the corresponding temperature value under the current activation energy is determined.

[0113] (3)

[0114] Among them, t eff E is the equivalent stress time. a The current activation energy is given by T, where k is the Boltzmann constant. l The last temperature value, T i Let t be the current temperature value, p be the time exponent, and t be the time exponent. i For the time of application.

[0115] In some embodiments, for each temperature value, the difference between the temperature value and the last temperature value is determined; a temperature acceleration factor is determined based on the product of the transition temperature value and the difference; and a second equivalent time for the corresponding temperature value at the current activation energy is determined based on the product of the application time of the temperature value and the temperature acceleration factor. The transition temperature value is the ratio between the current activation energy and a preset Boltzmann constant.

[0116] It should be noted that the higher the temperature (voltage V), the more... gstress (Unchanged), the faster the NBTI degradation rate, the greater the ΔV generated within stress time t at higher temperatures. th If it is at the first temperature, a stress time longer than t is required to produce the same ΔV. th Introducing "equivalent stress time (t)" eff The concept of "degradation ΔV" is defined as follows: At a higher temperature, an NBTI stress applied for a time t produces a degradation ΔV. th Therefore, at the first temperature, the same degradation ΔV is produced. th The required time is called the "equivalent stress time (t)". eff )".

[0117] S402 determines the second positional relationship between the equivalent temperature characteristic curve formed by each second equivalent time and corresponding temperature value and the preset temperature baseline.

[0118] In some embodiments, a second positional relationship is established between the equivalent temperature characteristic curve formed by comparing each second equivalent time and the corresponding temperature value and a preset temperature baseline.

[0119] S403 If the second positional relationship is different, update the current activation energy according to the second positional relationship and return to the step of determining the second equivalent time until the second positional relationship is the same.

[0120] In some embodiments, when the equivalent temperature characteristic curve is above the preset temperature baseline, the current acceleration data is decreased; when the equivalent temperature characteristic curve is below the preset temperature baseline, the current acceleration data is increased.

[0121] For example, with V gtress =-1.5V, step temperature range 25℃~125℃, taking 25℃ step as an example for explanation, such as Figure 4B As shown in (a) of the cumulative equivalent stress-time relationship diagram, we can guess an E that is larger than the typical activation energy range of NBTI. a The value is used to convert the actual stress time at the second and subsequent temperatures into t using formula (3). eff , will t eff By accumulating and adding them together, we get ΔV th The relationship between cumulative equivalent stress time (i.e., equivalent temperature characteristic curve) is observed to determine whether it falls within the ΔV of the first temperature. th On the extension of ~t (i.e., the temperature baseline). Among them, different E a ΔV calculated by value th ~t eff The relationship only applies when E a When the value equals the true value, ΔV under step temperature stress th Only then will it fall into the ΔV of the first temperature. th On the extension of ~t. The hollow point in the diagram is ΔV. th ~Accumulated stress time, solid point is ΔV th ~Cumulative equivalent stress time.

[0122] For example, with V gtress =-1.5V, step temperature range 25℃~125℃, taking 25℃ step as an example for explanation, such as Figure 4B As shown in (b) of the cumulative equivalent stress-time relationship diagram, we can guess an E value smaller than the typical activation energy range of NBTI. a Using the same analytical method, observe ΔV. th Does the cumulative equivalent stress time (i.e., the equivalent temperature characteristic curve) fall within the ΔV of the first temperature? th On the extension of ~t (i.e., the temperature baseline).

[0123] For example, with V gtress =-1.5V, step temperature range 25℃~125℃, taking 25℃ step as an example for explanation, such as Figure 4B As shown in (c) of the cumulative equivalent stress time relationship diagram, based on the above two conjectures E a Given the boundary value, a binary search method is used to gradually find a suitable guess E. a Value, such that ΔV thThe cumulative equivalent stress time (i.e., the equivalent temperature characteristic curve) falls exactly at ΔV of the first temperature. th On the extension of ~t (i.e., the temperature baseline), E at this time a The value represents the NBTI activation energy.

[0124] S404 uses the current activation energy in the last iteration as the target activation energy.

[0125] In some embodiments, an iterative convergence mechanism is constructed to achieve accurate extraction of the target activation energy: in each iteration, based on the current activation energy, the actual application time under different temperature stresses is uniformly converted into a second equivalent time relative to the last temperature value, and an equivalent temperature characteristic curve is generated; by intelligently judging the positional relationship between this curve and a preset temperature baseline, the activation energy estimate is dynamically adjusted—lowering the activation energy when the curve is above the baseline and raising the activation energy when it is below the baseline, iterating cyclically until the curve completely coincides with the baseline. This adaptive feedback method effectively overcomes the sensitivity of traditional single calculations to initial values, and through continuous optimization, makes the equivalent time data perfectly match the theoretical model, significantly improving the extraction accuracy and reliability of activation energy parameters, and providing key parameter guarantees for establishing an accurate aging prediction model.

[0126] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0127] Based on the same inventive concept, this application also provides an aging parameter determination device for physical models to implement the aging parameter determination method for the physical model described above. The solution provided by this device is similar to the solution described in the above method. Therefore, the specific limitations in the embodiments of one or more aging parameter determination devices for physical models provided below can be found in the limitations of the aging parameter determination method for physical models described above, and will not be repeated here.

[0128] In one exemplary embodiment, such as Figure 5As shown, an aging parameter determination device for a physical model is provided, comprising: a first acquisition module, a first determination module, a second acquisition module, a second determination module, and an aging determination module, wherein:

[0129] The first acquisition module 10 is used to acquire the voltage characteristic curves of the target device in the physical model under constant temperature and different voltage stresses; the voltage characteristic curves are used to characterize the correlation between the application time of different voltage stresses and the corresponding voltage stresses;

[0130] The first determining module 11 is used to determine the electric field acceleration data of the target device based on the voltage characteristic curve; the electric field acceleration data is used to characterize the degree of influence of voltage stress on the aging rate of the target device.

[0131] The second acquisition module 12 is used to acquire the temperature characteristic curves of the target device under the last voltage stress and different temperature values; the temperature characteristic curves are used to characterize the correlation between the application time of different temperatures and the corresponding temperature values.

[0132] The second determining module 13 is used to determine the target activation energy of the target device based on the temperature characteristic curve; the target activation energy is used to characterize the upper limit of energy required to induce aging of the target device.

[0133] The aging determination module 14 is used to determine the aging time of the target device based on the target activation energy and electric field acceleration data.

[0134] In some embodiments, the first determining module 11 is further configured to, for each iteration process, determine the first equivalent time of the corresponding voltage stress under the current acceleration data based on different voltage stresses, the application time of the corresponding voltage stress, the last voltage stress, and the current acceleration data; wherein, the current acceleration data under the first iteration process is a preset initial acceleration data; determine the first positional relationship between the equivalent voltage characteristic curve formed by each first equivalent time and the corresponding voltage stress and the preset voltage baseline; if the first positional relationship is different, update the current acceleration data according to the first positional relationship, and return to the step of determining the first equivalent time until the first positional relationship is the same; and use the current acceleration data under the last iteration process as the electric field acceleration data.

[0135] In some embodiments, the first determining module 11 is further configured to, for each voltage stress, determine a voltage acceleration factor of the voltage stress based on the voltage stress, the last voltage stress, and the current acceleration data; the voltage acceleration factor is used to characterize the aging rate under voltage stress relative to the acceleration factor under the last voltage stress; and determine a first equivalent time of the corresponding voltage stress under the current acceleration data based on the product between the application time of the voltage stress and the voltage acceleration factor.

[0136] In some embodiments, the first determining module 11 is further configured to decrease the current acceleration data when the equivalent voltage characteristic curve is above the preset voltage reference line, and increase the current acceleration data when the equivalent voltage characteristic curve is below the preset voltage reference line.

[0137] In some embodiments, the first determining module 13 is further configured to, for each iteration process, determine a second equivalent time for the corresponding temperature value under the current activation energy based on different temperature values, the application time of the corresponding temperature value, the last temperature value, and the current activation energy; wherein the current activation energy under the first iteration process is a preset initial activation energy; determine a second positional relationship between the equivalent temperature characteristic curve formed by each second equivalent time and the corresponding temperature value and a preset temperature baseline; if the second positional relationship is different, update the current activation energy according to the second positional relationship and return to the second equivalent time determining step until the second positional relationship is the same; and take the current activation energy under the last iteration process as the target activation energy.

[0138] In some embodiments, the first determining module 13 is further configured to: determine the difference between the temperature value and the last temperature value for each temperature value; determine the temperature acceleration factor based on the product between the conversion temperature value and the difference; the conversion temperature value is the ratio between the current activation energy and the preset Boltzmann constant; and determine the second equivalent time of the corresponding temperature value at the current activation energy based on the product between the application time of the temperature value and the temperature acceleration factor.

[0139] The various modules in the aging parameter determination device of the above physical model can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in the processor of a computer device in hardware form or independent of it, or stored in the memory of a computer device in software form, so that the processor can call and execute the operations corresponding to each module.

[0140] In one exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 6As shown, this computer device includes a processor, memory, input / output (I / O) interfaces, and a communication interface. The processor, memory, and I / O interfaces are connected via a system bus, and the communication interface is also connected to the system bus via the I / O interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and a database. The internal memory provides the environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The database stores data. The I / O interfaces are used for exchanging information between the processor and external devices. The communication interface is used for communicating with external terminals via a network connection. When executed by the processor, the computer program implements a method for determining aging parameters of a physical model.

[0141] Those skilled in the art will understand that Figure 6 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0142] In one embodiment, a computer device is also provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above method embodiments.

[0143] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the steps in the above method embodiments.

[0144] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above method embodiments.

[0145] It should be noted that the data involved in this application (including but not limited to data used for analysis, data stored, data displayed, etc.) are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of the relevant data must comply with relevant regulations.

[0146] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0147] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0148] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method of determining an aging parameter of a physical model, the method comprising: The method comprises: obtaining a voltage characteristic curve of a target device in a physical model under constant temperature and different voltage stresses; the voltage characteristic curve is used to represent a correlation between an application time of different voltage stresses and a corresponding voltage stress; determining, according to the voltage characteristic curve, electric field acceleration data of the target device; the electric field acceleration data is used to represent an influence degree of voltage stress on an aging speed of the target device; obtaining a temperature characteristic curve of the target device under a last voltage stress and different temperature values; the temperature characteristic curve is used to represent a correlation between an application time of different temperatures and a corresponding temperature value; determining, according to the temperature characteristic curve, a target activation energy of the target device; the target activation energy is used to represent an upper limit value of energy required to initiate aging of the target device; determining, according to the target activation energy and the electric field acceleration data, an aging time of the target device.

2. The method of claim 1, wherein, The method comprises: for each iteration process, determining, according to different voltage stresses, an application time of a corresponding voltage stress, a last voltage stress and current acceleration data, a first equivalent time of the corresponding voltage stress under the current acceleration data; wherein the current acceleration data under a first iteration process is preset initial acceleration data; determining a first positional relationship between an equivalent voltage characteristic curve formed by the first equivalent time and the corresponding voltage stress and a preset voltage reference line; in a case where the first positional relationship is not the same, updating the current acceleration data according to the first positional relationship, and returning to perform the step of determining the first equivalent time until the first positional relationship is the same; taking the current acceleration data under a last iteration process as the electric field acceleration data.

3. The method of claim 2, wherein, The method comprises: for each voltage stress, determining, according to the voltage stress, a last voltage stress and current acceleration data, a voltage acceleration factor of the voltage stress; the voltage acceleration factor is used to represent an acceleration multiple of an aging rate under the voltage stress relative to a last voltage stress; determining, according to a product between an application time of the voltage stress and the voltage acceleration factor, a first equivalent time of the corresponding voltage stress under the current acceleration data.

4. The method of claim 2, wherein, The method comprises: in a case where the equivalent voltage characteristic curve is located above the preset voltage reference line, reducing the current acceleration data; in a case where the equivalent voltage characteristic curve is located below the preset voltage reference line, increasing the current acceleration data.

5. The method of claim 1, wherein, The method comprises: For each iteration process, a second equivalent time of the corresponding temperature value under the current activation energy is determined according to different temperature values, an application time of the corresponding temperature value, a last temperature value and the current activation energy; wherein the current activation energy under the first iteration process is a preset initial activation energy; A second positional relationship between an equivalent temperature characteristic curve formed by the second equivalent time and the corresponding temperature value and a preset temperature reference line is determined; In a case that the second positional relationship is not the same position, the current activation energy is updated according to the second positional relationship, and the step of determining the second equivalent time is returned until the second positional relationship is the same position; The current activation energy under the last iteration process is taken as a target activation energy.

6. The method of claim 5, wherein, The step of determining the second equivalent time of the corresponding temperature value under the current activation energy according to different temperature values, an application time of the corresponding temperature value, a last temperature value and the current activation energy comprises: For each temperature value, a difference value between the temperature value and the last temperature value is determined; A temperature acceleration factor is determined according to a product between a conversion temperature value and the difference value; the conversion temperature value is a ratio between the current activation energy and a preset Boltzmann constant; A second equivalent time of the corresponding temperature value under the current activation energy is determined according to a product between an application time of the temperature value and the temperature acceleration factor.

7. An apparatus for determining an aging parameter of a physical model, the apparatus comprising: The device comprises: A first obtaining module is configured to obtain a voltage characteristic curve of a target device in a physical model under constant temperature and different voltage stresses; the voltage characteristic curve is used to represent a correlation between an application time of different voltage stresses and a corresponding voltage stress; A first determining module is configured to determine electric field acceleration data of the target device according to the voltage characteristic curve; the electric field acceleration data is used to represent an influence degree of voltage stress on an aging speed of the target device; A second obtaining module is configured to obtain a temperature characteristic curve of the target device under a last voltage stress and different temperature values; the temperature characteristic curve is used to represent a correlation between an application time of different temperatures and a corresponding temperature value; A second determining module is configured to determine a target activation energy of the target device according to the temperature characteristic curve; the target activation energy is used to represent an upper limit value of energy required to cause aging of the target device; An aging determining module is configured to determine an aging time of the target device according to the target activation energy and the electric field acceleration data. 8.A computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer device is configured to perform the method according to any one of claims 1-7. The processor executes the computer program to implement the steps of the method in any one of claims 1 to 6.

9. A computer readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 6.

10. A computer program product comprising a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 6.

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