PIT effect regulation and control method of boron alkene nanobelt

By adjusting the spacing and length of the nanoribbons in the boronene nanoribbon module, the problem of fixing the PIT effect of the boronene nanoribbons was solved, enabling flexible control of the transparent window and expanding its application range.

CN121477510APending Publication Date: 2026-02-06HUZHOU COLLEGE
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202511910525.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-17
Publication Date
2026-02-06

AI Technical Summary

Technical Problem

The PIT effect of boronene nanoribbons cannot be adjusted, resulting in a fixed transparency window and limiting its application scenarios.

Method used

By setting a first and a second boronene nanoribbon with asymmetric lengths on a target substrate, and adjusting their spacing based on control requirements, the target parameters of the boronene nanoribbon module can be controlled by adjusting the position of the nanoribbons using transfer printing technology or MEMS.

Benefits of technology

It enables flexible and controllable adjustment of the PIT effect parameters of the boronene belt module, expanding its application scenarios, especially its potential applications in optical filtering, optical sensing and slow light.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN121477510A_ABST
    Figure CN121477510A_ABST
Patent Text Reader

Abstract

The invention relates to the technical field of micro-nano photonics, and discloses a PIT effect regulation and control method for a boron-ene nanobelt, and the method comprises the steps: arranging a boron-ene nanobelt module on a target substrate; wherein the boron-alkene belt module comprises a first boron-alkene nanobelt with a first length and a second boron-alkene nanobelt with a second length; the distance between the first boron alkene nanobelt and the second boron alkene nanobelt is a first distance; based on the regulation and control demand, determining a regulation and control strategy; on the basis of the regulation and control strategy, regulating and controlling target parameters of the boron-alkene belt module to obtain an adjusted boron-alkene belt module; wherein the target parameter at least comprises the distance between the first boron alkene nanobelt and the second boron alkene nanobelt; the first PIT effect parameter corresponding to the boron-ene band module is different from the second PIT effect parameter corresponding to the adjusted boron-ene band module. According to the scheme, the application scene of the boron-ene belt module can be expanded.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This application relates to the field of micro-nano photonics technology, specifically to, but not limited to, a method for controlling the plasma-induced transparency (PIT) effect of boronene nanoribbons. Background Technology

[0002] Boronene, a unique two-dimensional material, can achieve surface plasmon resonance propagation in the near-infrared and visible light bands. Through electromagnetically induced transparency (EIT), boronene nanoribbons can generate a narrow transparent window in an otherwise broad absorption spectrum, demonstrating great potential in micro- and nano-optical applications. However, in practical applications, the fixed optical response and operating frequency of boronene nanoribbons prevent adjustment of their PIT effect, thus fixing their transparent window and limiting their application scenarios. Summary of the Invention

[0003] Based on the above technical problems, this application provides a method for controlling the PIT effect of boronene nanoribbons, which can flexibly adjust the spacing between boronene nanoribbons in the boronene nanoribbon module, flexibly adjust the PIT effect parameters of the boronene nanoribbon module, thereby enabling flexible adjustment of the transparent window of the boronene nanoribbon module, and thus expanding the application scenarios of the boronene nanoribbon module.

[0004] The technical solution provided in this application is as follows: This application provides a method for controlling the PIT effect of boronene nanoribbons, including: A boronene nanoribbon module is disposed on a target substrate; wherein, the boronene nanoribbon module includes a first boronene nanoribbon of a first length and a second boronene nanoribbon of a second length; the spacing between the first boronene nanoribbon and the second boronene nanoribbon is a first spacing; Based on the needs of regulation, determine the regulation strategy; Based on the aforementioned control strategy, the target parameters of the boronene nanoribbon module are controlled to obtain the adjusted boronene nanoribbon module; wherein, the target parameters include at least the spacing between the first boronene nanoribbon and the second boronene nanoribbon; the first PIT effect parameter corresponding to the boronene nanoribbon module is different from the second PIT effect parameter corresponding to the adjusted boronene nanoribbon module.

[0005] The method for controlling the PIT effect of boronene nanoribbons provided in this application has at least the following beneficial effects: In the PIT effect modulation method of boronene nanoribbons provided in this application embodiment, a boronene nanoribbon module is disposed on a target substrate, and the boronene nanoribbon module includes a first boronene nanoribbon of a first length and a second boronene nanoribbon of a second length. Thus, through the asymmetric lengths of the first and second boronene nanoribbons, the boronene nanoribbon module possesses a transparent window characterized by the first PIT effect parameter. Furthermore, a modulation strategy is determined based on the modulation requirements, and the target parameters of the boronene nanoribbon module are modulated based on the modulation strategy to obtain an adjusted boronene nanoribbon module. This achieves controllable and targeted modulation of the target parameters of the boronene nanoribbon module. Furthermore, the target parameters include the distance between the first and second boronene nanoribbons. The distance between the first and second boronene nanoribbons is such that the first PIT effect parameter of the boronene nanoribbon module differs from the second PIT effect parameter of the adjusted boronene nanoribbon module. Thus, by adjusting the distance between the first and second boronene nanoribbons, the PIT effect parameter of the boronene nanoribbon module can be flexibly adjusted. In summary, the technical solution provided in this application allows for flexible and controllable adjustment of the PIT effect parameter of the boronene nanoribbon module without altering the nanogeometry of the first and second boronene nanoribbons. This achieves flexible and controllable targeted adjustment of the PIT effect of the boronene nanoribbon module and flexible control of the transparent window of the boronene nanoribbon module, thereby expanding the application scenarios of the boronene nanoribbon module. Attached Figure Description

[0006] Figure 1 A schematic flowchart illustrating the method for controlling the PIT effect of nanoribbons provided in this application embodiment; Figure 2 This is a schematic diagram of the structure of the boronene belt module provided in the embodiments of this application; Figure 3 A schematic diagram illustrating the polarization-dependent dielectric constant variation of borophene provided in an embodiment of this application; Figure 4 A schematic diagram of the PIT effect of the boronene belt module provided in the embodiments of this application; Figure 5 A comparative schematic diagram of the physical mechanism of the PIT effect in the boronene belt module provided in the embodiments of this application; Figure 6 A schematic diagram illustrating the effect of the peak transmittance of the boronene belt module provided in this embodiment of the application changing with frequency; Figure 7A A schematic diagram illustrating the principle of regulating the bias voltage of boronene nanoribbons provided in the embodiments of this application; Figure 7B A schematic diagram showing the changes in the optical properties of the boronene belt module provided in the embodiments of this application as a function of electron density; Figure 8A schematic diagram illustrating the effect of the transparent window provided in this embodiment of the application changing with the length of the nano-boronene ribbon in the boronene ribbon module; Figure 9 This is a schematic diagram of a module assembly set on a target substrate provided in an embodiment of this application; Figure 10 This is a schematic diagram illustrating how the transmittance of the boronene ribbon module provided in this application changes with the cell period. Detailed Implementation

[0007] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings.

[0008] It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit this application.

[0009] Boronene, as a unique two-dimensional material, can support the propagation of surface plasmons in the near-infrared and visible light bands, which makes it show great potential in the field of micro-nano optics. This two-dimensional material can not only be synthesized on metal surfaces by molecular beam epitaxy, but also fabricated into independent nanosheets using liquid phase exfoliation. At the same time, boronene has attracted much attention due to its anisotropy, optical transparency, phonon-mediated superconductivity, and ultra-high thermal conductivity. On the other hand, inspired by plasmon modes in other two-dimensional materials, boronene metasurfaces have exhibited excellent anisotropic plasmon behavior in the visible to near-infrared spectral range, thus opening up new possibilities for photonics and nano-optics research.

[0010] EIT (Electronic Interference Through-Interference) is a quantum interference phenomenon observed in three-level atomic systems. Its characteristic is the creation of a narrow transparent window within an otherwise broad absorption spectrum. However, the practical applications of this effect are limited by its dependence on extreme environmental conditions, including ultra-low temperatures and high laser intensities. Currently, the potential applications of the PIT (Pulsed Interference Through-Interference) effect in optical filtering, optical sensing, and slow light have attracted widespread attention.

[0011] In practical applications, realizing the PIT effect mainly relies on two strategies: destructive interference with bright-bright mode coupling and bright-dark mode coupling. Based on these two strategies, researchers have developed various PIT metasurface structures and achieved significant theoretical and experimental progress. However, after fabrication, the fixed optical response and operating frequency limit the ability of PIT devices containing at least two boronene nanoribbons to adjust the transparent window, which severely hinders the application of tunable PIT devices.

[0012] Based on the above technical problems, this application provides a method for controlling the PIT effect of boronene nanoribbons. Figure 1A schematic flowchart of the method for controlling the PIT effect of nanoribbons provided in the embodiments of this application is shown below. Figure 1 As shown, the method may include the following steps: Step 101: Place the boronene tape module on the target substrate.

[0013] The boronene nanoribbon module includes a first boronene nanoribbon of a first length and a second boronene nanoribbon of a second length; the spacing between the first boronene nanoribbon and the second boronene nanoribbon is the first spacing.

[0014] In some embodiments, the target substrate may be a flexible substrate; for example, the target substrate may be a dielectric layer.

[0015] In some embodiments, the first boronene nanoribbon and the second boronene nanoribbon can both be rectangular or strip-shaped; and the first length and the second length can be different, so that the boronene ribbon module can constitute an asymmetric metasurface electromagnetic model.

[0016] In some embodiments, the first borene nanoribbon can be a monolayer borene or a bilayer borene, and the second borene nanoribbon can be a monolayer borene or a bilayer borene.

[0017] In some embodiments, the first spacing may include an initial spacing between the first borene nanoribbon and the second borene nanoribbon.

[0018] Figure 2 This is a schematic diagram of the structure of the boronene belt module provided in the embodiments of this application, as shown below. Figure 2 As shown, the length of the first boronene nanoribbon can be The length of the second boronene nanoribbon can be The spacing between the two can be g, and the width of the first borene nanoribbon can be w. The width of the second borene nanoribbon can be the same as or different from the width of the first borene nanoribbon.

[0019] Step 102: Determine the control strategy based on the control needs.

[0020] In some embodiments, the control strategy may include methods, steps, target values ​​and conditions for setting at least one parameter of the borene belt module.

[0021] In some embodiments, the control requirements may include the need to control the transparent window of the boronene belt module; for example, the transparent window may correspond to the spectral range of the resonance peak of the transmittance of the boronene belt module over a wide spectral range, thus the control requirements may include the need to control the resonance peak of the transmittance corresponding to the transparent window.

[0022] In some embodiments, the control strategy can be determined in the following ways: The anisotropic optical properties, effective dielectric constant, and transmission spectral range of the first and second boronene nanoribbons in the boronene nanoribbon module are analyzed to determine the target parameter whose influence on the spectral range of the resonance peak of PIT is greater than or equal to the threshold. The methods, steps, and conditions for adjusting the target parameter are then determined as the control strategy.

[0023] Specifically, in the near-infrared spectral range, the first borene nanoribbons and / or the second borene nanoribbons can utilize the surface conductivity of monolayer borene. This can be described by the Drud model, as shown in equations (1) to (2): (1) (2) Wherein, 𝑗 represents the direction of the optical axis inside the borophene crystal, which can specifically characterize the x-axis or y-axis. Let be the angular frequency of the incident light. The electron relaxation time, typically set to 60 femtoseconds, is used to characterize the electron charge. Represents electron density, Used to represent the drude mass related to the direction 𝑗. Used to represent the effective electron mass along the x-axis and y-axis directions, with the effective electron mass along the x-axis being... It can be 1.4 times the electron rest mass ( Effective electron mass along the y-direction It can be expressed as 5.2 times the electron rest mass.

[0024] Specifically, the effective dielectric constant of monolayer boronene It can be calculated from the surface conductivity in each direction, as shown in equation (3): (3) in, The relative permittivity of borophene can be represented, and its value can be 11. It can be the free space dielectric constant. The thickness of the monolayer boronene nanoribbon can be used. In the simulation of the monolayer boronene nanoribbon, the thickness is assumed to be much smaller than 0.3 nanometers of the target wavelength in order to effectively simulate the optical and physical properties of the monolayer boronene.

[0025] Figure 3 This is a schematic diagram illustrating the polarization-dependent dielectric constant variation of borone provided in an embodiment of this application. Figure 3In the coordinate systems shown in (a) and (b), the horizontal axis represents frequency in THz, the left vertical axis represents the real part of the polarization-dependent dielectric constant, and the right vertical axis represents the imaginary part of the polarization-dependent dielectric constant. Figure 3 As can be seen from (a) and (b), with As the dielectric constant increases, in the low-frequency region (0-100THz), the negative value of the real part of the polarization-dependent dielectric constant decreases, while the imaginary part of the polarization-dependent dielectric constant gradually increases, corresponding to a state of increased charge carriers and enhanced metallicity. In the high-frequency region (200-250THz) shown by the closed ring in the upper right corner of each figure, the real parts of all curves tend to flatten and overlap, and the influence of charge carrier concentration can be ignored. Meanwhile, in the mid-frequency range (100-200THz), the real parts of each curve increase rapidly, while the absorption peaks of the imaginary part are concentrated in this region (within the ring curve in the lower right corner of the figure), which is the key frequency band for the transition between metal and dielectric.

[0026] Figure 4 A schematic diagram of the PIT effect of the boronene belt module provided in this application embodiment. Specifically, in Figure 4 In the diagram, the horizontal axis represents frequency, the vertical axis represents transmittance, and the first length can be... Its transmission spectrum is represented by a blue dashed line, and the second length can be... The transmission spectrum of the first boronene nanoribbon is represented by a red dashed line, while the transmission spectrum of the boronene nanoribbon module is represented by a purple solid line. For simplicity, the first boronene nanoribbon can be referred to as a Long strip, the second boronene nanoribbon as a Short strip, and the boronene nanoribbon module as Two strips.

[0027] like Figure 4 As shown, the transmission spectrum of the first boronene nanoribbon is superimposed with that of the second boronene nanoribbon to obtain the transmission spectrum of the boronene nanoribbon module. Specifically, the two transmission dips observed in the PIT spectrum at 124.78 THz and 140.92 THz are highly consistent with the original resonance modes of each resonator, intuitively demonstrating the generation of the PIT effect.

[0028] In practical applications, the PIT phenomenon includes destructive interference of bright-bright mode coupling and bright-dark mode coupling, while Figure 4 The diagram shows the PIT effect corresponding to the destructive interference of the Ming-Ming mode coupling.

[0029] Figure 5 A comparative schematic diagram illustrating the physical mechanism of the PIT effect in the boronene belt module provided in the embodiments of this application. Figure 5 (a) and (d) correspond to fLD = 124.78 THz, while Figure 5(b) and (e) correspond to fMP = 130.68 THz. Figure 5 (c) and (f) correspond to fRD = 140.92 THz, and Figure 5 In equations (a), (b), and (c), the electric field (Ez) of the Z component in the xy plane is characterized, while Figure 5 In (d), (e), and (f), the distribution of the magnetic field |Hz| is characterized. The white dashed box marks the boundary between the two boronene nanoribbons. The "+" and "-" symbols represent the positive and negative polarities of the charge distribution, respectively.

[0030] Specifically, such as Figure 5 As shown in (a) and (c), when the incident wave electric field is aligned with the length direction of the nanoribbon, the first and second boronene nanoribbons excite electric dipole modes at resonant frequencies of 124.78 THz and 140.92 THz, respectively. Figure 5 (d) and (f) are respectively with Figure 5 The magnetic field distribution states corresponding to (a) and (c); from Figure 5 As can be seen in (b), at 130.68 THz, there is a distinct antiparallel charge distribution between the two boronene nanoribbons, indicating that the asymmetric quadrupole mode is excited at 130.68 THz; simultaneously, as Figure 5 As shown in (e), the corresponding magnetic field is mainly concentrated in the gap region between the two nanoribbons; the above indicates that the PIT effect originates from the hybridization and coupling between the bright electric dipole modes generated by two boronene nanoribbons of different lengths.

[0031] Figure 6 This is a schematic diagram illustrating the effect of frequency on the peak transmittance of the boronene belt module provided in this embodiment of the application. Figure 6 In the coordinate system shown, the horizontal axis represents frequency in THz, the vertical axis represents transmittance, and g is used to characterize the spacing between the first and second borene nanoribbons. Figure 6 As shown, with the increase of the spacing between the first and second boronene nanoribbons, the peak transmittance shifts to lower frequencies, while simultaneously widening the transparency window. Therefore, by adjusting the spacing between the first and second boronene nanoribbons, the position of the PIT transmission peak and the position of the transparency window can be adjusted.

[0032] Step 103: Based on the control strategy, adjust the target parameters of the boronene belt module to obtain the adjusted boronene belt module.

[0033] The target parameters include at least the spacing between the first borene nanoribbon and the second borene nanoribbon; the first PIT effect parameter corresponding to the borene ribbon module is different from the second PIT effect parameter corresponding to the adjusted borene ribbon module.

[0034] In some embodiments, the second spacing characterized by the target parameter can be greater than or less than the first spacing; for example, the value of the second spacing can be determined according to the control requirements of the width of the corresponding transparent window and the frequency corresponding to the PIT transmission peak.

[0035] In some embodiments, the first PIT effect parameter may include the first width of the transparent window corresponding to the boronene belt module and the first frequency corresponding to the peak value of its transmittance, while the second PIT effect parameter may include the adjusted second width of the transparent window corresponding to the boronene belt module and the second frequency corresponding to the peak value of its transmittance.

[0036] In some embodiments, the target parameters of the borophene belt module can be adjusted in the following ways: By adjusting the placement of the first and / or second boronene nanoribbons on the target substrate using transfer printing technology or microelectromechanical systems (MEMS), the first pitch can be specifically adjusted to obtain the adjusted boronene nanoribbon module.

[0037] As can be seen from the above, in the PIT effect modulation method of boronene nanoribbons provided in this application embodiment, a boronene nanoribbon module is set on the target substrate, and the boronene nanoribbon module includes a first boronene nanoribbon of a first length and a second boronene nanoribbon of a second length. Thus, through the asymmetric lengths of the first and second boronene nanoribbons, the boronene nanoribbon module possesses a transparent window characterized by the first PIT effect parameter. Furthermore, a modulation strategy is determined based on the modulation requirements, and the target parameters of the boronene nanoribbon module are modulated based on the modulation strategy to obtain an adjusted boronene nanoribbon module. Thus, controllable and targeted modulation of the target parameters of the boronene nanoribbon module is achieved. Based on this, the target parameters include the lengths of the first and second boronene nanoribbons. The spacing between the first and second boronene nanoribbons is adjusted, and the first PIT effect parameter corresponding to the boronene nanoribbon module is different from the second PIT effect parameter corresponding to the adjusted boronene nanoribbon module. Thus, by adjusting the spacing between the first and second boronene nanoribbons, the PIT effect parameter corresponding to the boronene nanoribbon module can be flexibly adjusted. In summary, the technical solution provided by the embodiments of this application can flexibly and controllably adjust the PIT effect parameter of the boronene nanoribbon module without changing the nanogeometry of the first and second boronene nanoribbons. This achieves flexible and controllable targeted adjustment of the PIT effect of the boronene nanoribbon module and flexible control of the transparent window of the boronene nanoribbon module, thereby expanding the application scenarios of the boronene nanoribbon module.

[0038] Based on the foregoing embodiments, the method for controlling the PIT effect of borophene nanoribbons provided in this application can achieve the following by controlling the target parameters of the borophene nanoribbon module based on the control strategy: During the preparation stage, the placement of the first boronene nanoribbon and / or the second boronene nanoribbon on the target substrate is adjusted by transfer printing technology to change the first spacing to the second spacing.

[0039] The second spacing is related to the regulatory demand.

[0040] In some embodiments, the second spacing can be determined based on the width of the transparent window corresponding to the control requirements and the frequency position corresponding to the peak transmittance.

[0041] In some embodiments, the placement position of the first boronene nanoribbon and / or the placement position of the second boronene nanoribbon can be adjusted according to the control requirements to adjust the first spacing to the second spacing.

[0042] As can be seen from the above, in the PIT effect control method of boronene nanoribbons provided in this application embodiment, during the preparation stage, the placement positions of the first boronene nanoribbons and / or the second boronene nanoribbons on the target substrate are adjusted by transfer printing technology to change the first spacing to the second spacing. Thus, during the preparation stage, targeted control of the placement positions of the first boronene nanoribbons and / or the second boronene nanoribbons can be achieved, thereby enabling flexible control of the spacing between the two boronene nanoribbons.

[0043] Based on the foregoing embodiments, the method for controlling the PIT effect of borophene nanoribbons provided in this application can also achieve the control of the target parameters of the borophene nanoribbon module based on the control strategy in the following ways: In the application phase, the placement of the first boronene nanoribbon and / or the second boronene nanoribbon on the target substrate is dynamically adjusted using MEMS to change the first spacing to the second spacing.

[0044] The second spacing is related to the regulatory demand.

[0045] In some embodiments, the application phase may be later than the preparation phase, and it can characterize the phase of applying or using the borophene belt module after the preparation phase is completed.

[0046] In some embodiments, during the application phase, the placement positions of the first boronene nanoribbon and / or the second boronene nanoribbon on the target substrate can be specifically adjusted according to at least one of the following: control requirements, actual control difficulty, control risks, and control costs, so as to adjust the first spacing to the second spacing; the second spacing can also be determined according to the width of the transparent window corresponding to the control requirements and the frequency position corresponding to the peak transmittance.

[0047] As can be seen from the above, in the PIT effect control method of boronene nanoribbons provided in this application embodiment, during the application stage, the placement positions of the first boronene nanoribbons and / or the second boronene nanoribbons on the target substrate are dynamically adjusted by MEMS to adjust the first spacing to the second spacing. Thus, during the application stage, without changing the nanostructure of the first and second boronene nanoribbons, flexible control of the placement positions of the first and / or second boronene nanoribbons can be achieved, thereby enabling flexible and targeted adjustment of the transparent window of the boronene ribbon module.

[0048] Based on the foregoing embodiments, in the PIT effect control method of boronene nanoribbons provided in this application, the target parameters also include the bias voltage corresponding to the first boronene nanoribbon and / or the second boronene nanoribbon; the first PIT effect parameters and the second PIT effect parameters also include the phase shift and group refractive index of the boronene ribbon module; the phase shift and group refractive index are related to the bias voltage.

[0049] Accordingly, based on the regulation strategy, the target parameters of the borophene belt module can be regulated in the following ways: The bias voltage of the first boronene nanoribbon is adjusted to the first bias voltage. And / or, The bias voltage of the second boronene nanoribbon is adjusted to the second bias voltage.

[0050] Related studies have shown that changing the bias voltage of boronene nanoribbons can alter the electron density within them, thereby changing their transmittance.

[0051] Figure 7A This is a schematic diagram illustrating the principle of regulating the bias voltage of boronene nanoribbons provided in the embodiments of this application, as shown below. Figure 7A As shown, ion gel can be used as an ion gel coating layer. The substrate can be a metal contact point, the dielectric layer corresponding to the target substrate, and the thin film between the dielectric layer and the ionogel capping layer can be a first boronene nanoribbon or a second boronene nanoribbon. Specifically, by adjusting the voltage amplitude applied to the metal contact point, the bias voltage of the first boronene nanoribbon and / or the second boronene nanoribbon can be flexibly adjusted.

[0052] In some embodiments, the bias voltage of the first boronene nanoribbon can be adjusted to a first bias voltage and / or the bias voltage of the second boronene nanoribbon can be adjusted to a second bias voltage through the ion gel coating layer and metal contact points, so as to adjust the electron density in the boronene and thereby achieve the control of the PIT effect parameters of the boronene nanoribbon module; wherein the ion gel coating layer and metal contact points can be associated with the first boronene nanoribbon and / or the second boronene nanoribbon.

[0053] Specifically, a three-stage plasma model can be used to verify and analyze the above process; in this model, the incident electric field can be defined as... The first excitation mode can be The second excitation mode can be Using the coupled Lorentz oscillator model, the coupling equations corresponding to the first and second excitation modes can be shown in equations (4) and (5), respectively: (4) (5) in, Let be the angular frequency of the incident light. The first resonance frequency of the first excitation mode. This is the second resonance frequency of the second excitation mode. The first damping coefficient for the first excitation mode. It is the second damping coefficient of the second excitation mode, parameter The coupling strength between the first and second excitation modes was characterized. Characterizes the first independent coupling strength between the first excitation mode and the incident electric field. This represents the second independent coupling strength between the second excitation mode and the incident electric field. By solving equations (4) and (5), the complex amplitude expression of the first excitation mode can be obtained, as shown in equation (6). (6) In other words, The complex amplitude is proportional to the polarizability of the three-stage plasma model.

[0054] Since the energy dissipation of metasurface devices is mainly related to the imaginary part of the magnetic susceptibility, the transmittance of the boronene metasurface characterized by the first or second boronene nanoribbon, as represented by equation (7), can be obtained. The calculation formula is as follows: (7) In other words, the transmittance of the first or second boronene nanoribbon is related to the bias voltage applied to them, respectively.

[0055] Figure 7B This is a schematic diagram comparing the changes in optical properties of the boronene ribbon module provided in this application embodiment with changes in electron density. The optical properties may include transmittance, phase shift, and group index.

[0056] exist Figure 7BThe electron densities corresponding to (a) to (e) shown are as follows. They are respectively , , , as well as , Figure 7B The (f) to (j) shown are respectively with Figure 7B The electron densities corresponding to (a) to (e) are the same, and Figure 7B The (k) to (o) shown are respectively with Figure 7B The electron densities corresponding to (a) to (e) are the same.

[0057] For example, from Figure 7B As shown in (a) to (e), the transmittance of the boronene band module decreases with decreasing electron density, and the spectral position of the transparent window corresponding to the transmittance also shifts to lower frequencies. Increase to At this point, the dispersion loss significantly decreases, causing the peak frequency of the PIT window to jump from 65.76 terahertz to 145.82 terahertz. Therefore, by adjusting the electron density of the boronene nanoribbon, the transmittance of the PIT effect and the spectral position of the transparent window can be specifically adjusted. In other words, as the electron density in the boronene ribbon module increases, the intensity of the PIT resonance peak gradually strengthens, and this enhancement effect directly stems from the influence of electron density changes on surface plasmon dispersion loss. Thus, the position of the PIT window can be dynamically adjusted by regulating the electron density of boronene without altering the nanoscale geometry.

[0058] Meanwhile, the slow light phenomenon is usually manifested in the spectral response through the group refractive index of the transmitted light. The group refractive index is a direct indicator for evaluating the performance of slow light devices; a higher value indicates a more significant slow light effect, and the two are positively correlated. The group refractive index is used to characterize the slow light effect. It can be shown in equation (8): (8) In equation (8), Let k be the speed of light in a vacuum, kk represent the wave vector in a vacuum, and ℎ be the thickness of the boronene nanoribbon. This represents the phase change during light transmission.

[0059] For example, from Figure 7B As shown in (f) to (j), the phase dispersion of the boronene band module becomes significant near the transparent window and intensifies with increasing electron density; furthermore, Figure 7BAs shown in (k) to (o), the group refractive index of the boronene band module is related to the gradient of the phase-frequency curve. That is, the more significant the phase dispersion, the higher the group refractive index. Therefore, the group refractive index will gradually increase with the increase of electron density. Furthermore, the group delay will also be enhanced accordingly when the electron density gradually increases.

[0060] It is worth noting that when the electron density reaches At this time, the group refractive index within the transparent window is close to 27. This demonstrates that by adjusting the electron density of borone, not only can the transparent window be adjusted, but the group refractive index related to the PIT effect can also be controlled.

[0061] Table 1 lists the parameter values ​​for fitting transmission spectra with different electron densities.

[0062] Table 1 Based on the above characteristics, it can be determined that the boronene belt module provided in this application has the potential for application in advanced slow light devices in the near-infrared region: the enhanced group refractive index helps to manipulate light pulses, can extend the storage time of light signals and improve the sensitivity of sensing applications, thereby paving the way for actively controlled nanophotonics technology.

[0063] As can be seen from the above, in the PIT effect modulation method of boronene nanoribbons provided in this application embodiment, the target parameters also include the bias voltage corresponding to the first boronene nanoribbon and / or the second boronene nanoribbon. The bias voltage of the first boronene nanoribbon is adjusted to the first bias voltage, and / or the bias voltage of the second boronene nanoribbon is adjusted to the second bias voltage. In this way, the bias voltage of the two boronene nanoribbons in the boronene ribbon module can be flexibly adjusted, thereby enabling flexible adjustment of the electron density of the two boronene nanoribbons, and thus enabling flexible and precise adjustment of the PIT effect parameters of the boronene ribbon module. Furthermore, the first PIT effect parameters and the second PIT effect parameters also include the phase shift and group refractive index of the boronene ribbon module. The phase shift and group refractive index are related to the bias voltage. Thus, by adjusting the bias voltage of the boronene nanoribbons in the boronene ribbon module, the phase shift and group refractive index of the boronene ribbon module can be finely adjusted, providing conditions for the application of the boronene ribbon module in the field of slow light control.

[0064] Based on the foregoing embodiments, the target parameters in the PIT effect regulation method of boronene nanoribbons provided in this application embodiment further include the lengths of the first boronene nanoribbon and / or the second boronene nanoribbon.

[0065] Accordingly, based on the regulation strategy, the target parameters of the borophene belt module can also be regulated in the following ways: Adjust the first length to the third length, and / or adjust the second length to the fourth length.

[0066] Among them, the third and / or fourth lengths are related to regulatory needs.

[0067] In some embodiments, the third and fourth lengths may be determined based on the width of the transparent window characterized by the modulation requirements and the spectral range of the resonance peak.

[0068] Figure 8 This is a schematic diagram illustrating the effect of the transparent window provided in this embodiment changing with the length of the nano-boronene ribbon in the boronene ribbon module. Figure 8 In the graph, the horizontal axis represents frequency, and the vertical axis represents transmittance.

[0069] like Figure 8 As shown in (a) in the figure, when When the transmittance increases from 58 nm to 62 nm, the frequency corresponding to the local minimum transmittance on the left side of the transparent window shifts towards lower frequencies, while the resonant frequency corresponding to the local minimum transmittance on the right side of the transparent window remains relatively stable. This significantly widens the transparent window. Figure 8 Regarding (b) in this context, when When the wavelength is shortened from 50 nanometers to 46 nanometers, the frequency corresponding to the minimum transmittance on the right side of the transparent window shifts towards higher frequencies, while the resonant frequency of the local minimum transmittance on the left side remains almost unchanged. In other words... The shortening of the window also causes the transparent window to expand.

[0070] In summary, the shift in transmittance dip originates from the difference in resonant frequencies of the various boronene nanoribbons, indicating that precise tuning... and This allows for effective adjustment of the window range of the PIT effect, thereby enabling precise control over the optical response.

[0071] Therefore, by determining the third and / or fourth lengths based on the control requirements, and adjusting the first length to the third length, and / or adjusting the second length to the fourth length, it is possible to flexibly control the width of the transparent window of the boronene belt module.

[0072] For example, the lengths of the first borene nanoribbon and / or the second borene nanoribbon can be adjusted by transfer printing technology or MEMS.

[0073] As can be seen from the above, in the PIT effect regulation method of boronene nanoribbons provided in this application embodiment, the target parameters also include the lengths of the first and / or second boronene nanoribbons, and the first length is adjusted to a third length, and / or the second length is adjusted to a fourth length, wherein the third and / or fourth lengths are related to the regulation requirements. Thus, through the above operations, the controllability of regulating the length of the boronene nanoribbons is improved, and the flexibility and diversity of regulating the PIT effect parameters of the boronene nanoribbon module are also enhanced.

[0074] Based on the foregoing embodiments, the method for controlling the PIT effect of boronene nanoribbons provided in this application can also perform the following operations: Set the module set on the target base.

[0075] The module set includes at least two boronene belt modules.

[0076] In some embodiments, the spacing between boronene belt modules in the module set can be preset.

[0077] Figure 9 This is a schematic diagram illustrating a structure for setting a module assembly on a target substrate, as provided in an embodiment of this application. Figure 9 As shown, multiple module sets 902 can be set on the target substrate 901, and each module set 902 can include multiple boronene belt modules 903.

[0078] For example, such as Figure 9 As shown, multiple modules can be arranged in parallel on the target substrate.

[0079] As can be seen from the above, in the method for controlling the PIT effect of boronene nanoribbons provided in this application embodiment, a module set including at least two boronene nanoribbon modules is disposed on the target substrate. This improves the flexibility and diversity of the boronene nanoribbon module placement and also allows the module set to have a transparent window corresponding to each boronene nanoribbon module.

[0080] Based on the foregoing embodiments, in the method for regulating the PIT effect of boronene nanoribbons provided in this application, the module set includes a periodic structure of boronene nanoribbon modules.

[0081] In some embodiments, the periodic structure may refer to the boronene belt modules in the module set being periodically arranged in at least one spatial dimension; for example, the boronene belt modules are periodically arranged at a first interval in a first direction of the target substrate, and / or, the boronene belt modules are periodically arranged at a second interval in a second direction of the target substrate; and the first interval and the second interval may be the same or different.

[0082] As can be seen from the above, in the method for controlling the PIT effect of borophene nanoribbons provided in this application embodiment, the module set includes a periodic structure of borophene ribbon modules. Thus, the stability and robustness of the PIT effect of the module set can be improved through the periodic structure of the borophene ribbon modules.

[0083] Based on the foregoing embodiments, in the method for controlling the PIT effect of boronene nanoribbons provided in this application, the parameters of the m-th module are different from those of the n-th module.

[0084] Wherein, the parameters of the m-th module include the parameters of the m-th boronene belt module in the module set; the parameters of the n-th module include the parameters of the n-th boronene belt module in the module set; the parameters of the m-th module include at least the spacing of the m-th nanobelts; the parameters of the n-th module include at least the spacing of the n-th nanobelts; the spacing of the m-th nanobelts includes the spacing between two boronene nanobelts in the m-th boronene belt module; the spacing of the n-th nanobelts includes the spacing between two boronene nanobelts in the n-th boronene belt module; m and n are both integers greater than or equal to 1, and the values ​​of m and n are different.

[0085] As can be seen from the foregoing embodiments, the PIT effect parameter of the boronene ribbon module can change with the different spacing between the asymmetric boronene nanoribbons contained in the boronene ribbon module. Therefore, by differentiating the nanoribbon spacing corresponding to different boronene ribbon modules in the module set, the boronene ribbon modules contained in the module set have different PIT effect parameters, thereby making the transparent windows and the resonance peaks of transmittance corresponding to different boronene ribbon modules in the module set also exhibit different states.

[0086] It should be noted that the nanoribbon spacing corresponding to each boronene ribbon module in the module set can be preset, and the boronene ribbon module can be set on the target substrate according to the above nanoribbon spacing during the preparation stage. Alternatively, the nanoribbon spacing corresponding to each boronene ribbon module can be adjusted during the application stage using the method provided in the aforementioned embodiments.

[0087] As can be seen from the above, in the PIT effect modulation method of boronene nanoribbons provided in the embodiments of this application, the nanoribbon spacing corresponding to different boronene nanoribbon modules in the module set is different. In this way, the PIT effect parameters corresponding to the boronene nanoribbon modules in the module set have diversity, thereby improving the diversity of the resonance peaks of the transparent window and the transmittance corresponding to the boronene nanoribbon modules in the module set.

[0088] Based on the foregoing embodiments, in the PIT effect regulation method of boronene nanoribbons provided in this application embodiment, the m-th module parameter also includes the lengths of the two boronene nanoribbons contained in the m-th boronene nanoribbon module; the n-th module parameter also includes the lengths of the two boronene nanoribbons contained in the n-th boronene nanoribbon module.

[0089] In some embodiments, the lengths of the two boronene nanoribbons included in the m-th boronene nanoribbon module may be different from the lengths of the two boronene nanoribbons included in the n-th boronene nanoribbon module, or the lengths of the two boronene nanoribbons included in the m-th boronene nanoribbon module may be different from the length of one of the two boronene nanoribbons included in the n-th boronene nanoribbon module.

[0090] In some embodiments, the lengths of the two boronene nanoribbons contained in different boronene nanoribbon modules in the module set can be differentiated during the preparation stage, or can be controlled during the application stage using the methods provided in the foregoing embodiments.

[0091] As can be seen from the above, in the PIT effect modulation method of boronene nanoribbons provided in this application embodiment, the m-th module parameter also includes the lengths of the two boronene nanoribbons contained in the m-th boronene nanoribbon module, and the n-th module parameter also includes the lengths of the two boronene nanoribbons contained in the n-th boronene nanoribbon module. Thus, by differentiating the lengths of the two boronene nanoribbons contained in different boronene nanoribbon modules within the module set, the diversity of the PIT effect parameters corresponding to different boronene nanoribbon modules in the module set can be improved. In this case, a module set can possess diverse transparent windows, thereby enabling the module set to meet diverse optical processing requirements.

[0092] Based on the foregoing embodiments, in the PIT effect modulation method of boronene nanoribbons provided in this application embodiment, the parameters of the m-th module further include the cell periods of the two boronene nanoribbons contained in the m-th boronene nanoribbon module; the parameters of the n-th module further include the cell periods of the two boronene nanoribbons contained in the n-th boronene nanoribbon.

[0093] Figure 10 This is a schematic diagram illustrating how the transmittance of the boronene ribbon module provided in this application changes with the cell period. Figure 10 As shown, when the value of the cell period P changes from 50 to 150 or even 200, the local minimum value of the transmittance of the boronene ribbon module will be enhanced synchronously. Therefore, by using different cell periods, the transparent window of the boronene ribbon module can be adjusted synchronously.

[0094] In some embodiments, the cell period in the m-th module parameter may be different from at least one of the cell periods in the n-th module parameter.

[0095] As can be seen from the above, in the PIT effect modulation method of boronene nanoribbons provided in this application embodiment, the m-th module parameter includes the cell periods of the two boronene nanoribbons contained in the m-th boronene nanoribbon module, and the n-th module parameter includes the cell periods of the two boronene nanoribbons contained in the n-th boronene nanoribbon module. Thus, by setting boronene nanoribbon modules with different cell periods, the module set can possess different PIT effect parameters, thereby enabling the module set to possess different transparency windows, and further improving the diversity of the transparency windows of the module set.

[0096] It should be noted that, in the embodiments of this application, any two boronene nanoribbon modules in the module set can also have their electron density adjusted by adjusting the bias voltage applied to the boronene nanoribbon, thereby achieving targeted adjustment of their transparent windows.

[0097] In summary, the technical solution provided in this application, by adjusting the bias voltage, length, spacing, and cell period of the boronene nanoribbons in the boronene ribbon module, enables flexible and diversified adjustment of the PIT window of the boronene ribbon module. This allows for more flexible and diverse control of the default PIT effect of the boronene ribbon, thus providing a foundation for customized optical responses of the boronene ribbon module. Furthermore, by precisely controlling the electron density within the boronene nanoribbons, dynamic modulation of the near-infrared spectral response of the boronene ribbon module is successfully achieved. Simultaneously, the dispersive characteristics and controllable group refractive index of the PIT transparent window open up new avenues for the realization of dynamically controllable slow light technology, laying the foundation for the application of boronene ribbon modules in cutting-edge fields such as optical information processing, optical storage, and photonic integrated circuits.

[0098] The description of the various embodiments above tends to emphasize the differences between the various embodiments. The similarities or similarities between them can be referred to, and for the sake of brevity, they will not be repeated here.

[0099] The methods disclosed in the various method embodiments provided in this application can be arbitrarily combined to obtain new method embodiments without conflict.

[0100] The features disclosed in the various product embodiments provided in this application can be arbitrarily combined without conflict to obtain new product embodiments.

[0101] The features disclosed in the various method or device embodiments provided in this application can be arbitrarily combined without conflict to obtain new method or device embodiments.

[0102] It should be noted that the aforementioned computer-readable storage media can be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), magnetic random access memory (FRAM), flash memory, magnetic surface memory, optical disc, or compact disc read-only memory (CD-ROM), etc.; or it can be various electronic devices including one or any combination of the above-mentioned memories, such as mobile phones, computers, tablet devices, personal digital assistants, etc.

[0103] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0104] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0105] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware nodes. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal device (which may be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of this application.

[0106] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0107] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0108] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0109] The above are merely preferred embodiments of this application and do not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A method for controlling the PIT effect of boronene nanoribbons, characterized in that, The method includes: A boronene nanoribbon module is disposed on a target substrate; wherein, the boronene nanoribbon module includes a first boronene nanoribbon of a first length and a second boronene nanoribbon of a second length; the spacing between the first boronene nanoribbon and the second boronene nanoribbon is a first spacing; Based on the needs of regulation, determine the regulation strategy; Based on the aforementioned control strategy, the target parameters of the boronene nanoribbon module are controlled to obtain the adjusted boronene nanoribbon module; wherein, the target parameters include at least the spacing between the first boronene nanoribbon and the second boronene nanoribbon; the first PIT effect parameter corresponding to the boronene nanoribbon module is different from the second PIT effect parameter corresponding to the adjusted boronene nanoribbon module.

2. The method according to claim 1, characterized in that, The control of the target parameters of the boronene belt module based on the control strategy includes: During the preparation stage, the placement positions of the first boronene nanoribbon and / or the second boronene nanoribbon on the target substrate are adjusted by transfer printing technology to change the first spacing to a second spacing; wherein the second spacing is related to the control requirements.

3. The method according to claim 1, characterized in that, The control of the target parameters of the boronene belt module based on the control strategy includes: In the application phase, the placement positions of the first boronene nanoribbon and / or the second boronene nanoribbon on the target substrate are dynamically adjusted by a microelectromechanical system (MEMS) to adjust the first spacing to a second spacing; wherein the second spacing is related to the control requirements.

4. The method according to claim 1, characterized in that, The target parameters also include a bias voltage corresponding to the first boronene nanoribbon and / or the second boronene nanoribbon; the first PIT effect parameter and the second PIT effect parameter also include the phase shift and group refractive index of the boronene ribbon module; the phase shift and the group refractive index are related to the bias voltage; Based on the aforementioned control strategy, the target parameters of the borophene belt module are controlled, including: The bias voltage of the first boronene nanoribbon is adjusted to the first bias voltage; And / or, The bias voltage of the second boronene nanoribbon is adjusted to the second bias voltage; The first bias voltage and the second bias voltage are associated with the control requirements.

5. The method according to claim 1, characterized in that, The target parameters also include the lengths of the first borene nanoribbon and / or the second borene nanoribbon; the control of the target parameters of the borene nanoribbon module based on the control strategy includes: Adjust the first length to the third length. And / or, Adjust the second length to the fourth length; The third length and / or the fourth length are associated with the control requirements.

6. The method according to any one of claims 1 to 5, characterized in that, The method further includes: The module set is disposed on the target substrate; wherein the module set includes at least two of the boronene belt modules.

7. The method according to claim 6, characterized in that, The module set includes a periodic structure containing the boronene belt module.

8. The method according to claim 6, characterized in that, The parameters of the m-th module are different from those of the n-th module; wherein, the parameters of the m-th module include the parameters of the m-th boronene belt module in the module set; the parameters of the n-th module include the parameters of the n-th boronene belt module in the module set; the parameters of the m-th module include the spacing between the m-th nanobelts; the parameters of the n-th module include the spacing between the n-th nanobelts; the spacing between the m-th nanobelts includes the spacing between two boronene nanobelts in the m-th boronene belt module; the spacing between the n-th nanobelts includes the spacing between two boronene nanobelts in the n-th boronene belt module; m and n are both integers greater than or equal to 1, and the values ​​of m and n are different.

9. The method according to claim 8, characterized in that, The parameters of the m-th module also include the lengths of the two boronene nanoribbons contained in the m-th boronene nanoribbon module; the parameters of the n-th module also include the lengths of the two boronene nanoribbons contained in the n-th boronene nanoribbon module.

10. The method according to claim 8, characterized in that, The parameters of the m-th module also include the cell periods of the two boronene nanoribbons contained in the m-th boronene nanoribbon module; the parameters of the n-th module also include the cell periods of the two boronene nanoribbons contained in the n-th boronene nanoribbon.