Methods, systems, devices and media for feedforward and feedback coordinated control of semiconductor devices

Abstract

This application provides a method, system, device, and medium for coordinated feedforward and feedback control of semiconductor devices. The method includes: setting a sampling period; acquiring sampled data from the semiconductor device control system within each sampling period; calculating temperature error and disturbance intensity indicators based on the sampled data and determining the current temperature control operation stage; weighting and summing the feedforward control quantity and the feedback control quantity according to the feedforward weight and the feedback weight to obtain a comprehensive control signal; fine-tuning the feedforward weight using an adaptive weight correction strategy; and synchronously updating the feedback weight and the comprehensive control signal; instantiating temperature control tasks according to the temperature control operation stage and triggering conditions; generating a temperature control task queue; assigning priority weights to each temperature control task based on the disturbance intensity indicator and execution response delay; mapping multiple types of temperature control tasks to corresponding execution units; and driving the dynamic scheduling and execution of each execution unit in different temperature control operation stages based on the comprehensive control signal.

Description

Technical Field

[0001] This application relates to semiconductor device control technology, and more particularly to a method, system, device, and medium for coordinated feedforward and feedback control of semiconductor devices. Background Technology

[0002] In wafer manufacturing equipment, the temperature control system is a critical component for ensuring process stability, especially during high-temperature processes such as metal filling, thin film deposition, and annealing. Temperature fluctuations directly affect the density, adhesion, and interface uniformity of materials. Current wafer temperature control systems mostly employ traditional feedback control methods, relying solely on temperature sensor sampling results for error correction. When affected by changes in ambient temperature, heating power disturbances, or cavity airflow variations, feedback control often exhibits response lag or overshoot, leading to uneven temperature distribution on the wafer surface, which in turn affects process consistency and film quality.

[0003] To improve the response lag problem, some equipment has introduced feedforward control. However, feedforward and feedback are often designed independently without establishing dynamic weights or task coordination mechanisms, which can easily lead to imbalances or mutual cancellation of control signals.

[0004] Therefore, there is an urgent need for a method, system, device, and medium for coordinated feedforward and feedback control of semiconductor devices. Summary of the Invention

[0005] This application provides a method, system, device, and medium for coordinated feedforward and feedback control of semiconductor devices to solve the problems of the prior art.

[0006] In a first aspect, this application provides a method for coordinated feedforward and feedback control of a semiconductor device, comprising:

[0007] Temperature control operation phase identification, setting sampling period, acquiring sampling data from semiconductor device control system in each sampling period, calculating temperature error and disturbance intensity index based on the sampling data, and determining the current temperature control operation phase in combination with preset error threshold, the temperature control operation phase includes disturbance-dominated phase, steady-state control phase and transition phase;

[0008] The integrated control signal is calculated by weighting and summing the feedforward control quantity and the feedback control quantity according to the feedforward weight and the feedback weight to obtain the integrated control signal. When the temperature response shows overshoot, undershoot or response lag, an adaptive weight correction strategy is used to fine-tune the feedforward weight and update the feedback weight and the integrated control signal simultaneously.

[0009] The task scheduling and coordination mechanism selects the corresponding task template from the temperature control task template library based on the temperature control operation stage and triggering conditions to instantiate temperature control tasks, generates a temperature control task queue for the current sampling period, assigns priority weights to each temperature control task based on the disturbance intensity index and execution response delay, and maps multiple types of temperature control tasks, including heating power adjustment tasks, execution delay compensation tasks, temperature deviation fine-tuning tasks, and compensation suppression tasks, to corresponding execution units. The mechanism also drives the dynamic scheduling and execution of each execution unit in different temperature control operation stages based on the integrated control signal.

[0010] In one possible design, temperature control operation phase identification, integrated control signal fusion calculation, and task scheduling coordination mechanism are sequentially executed within each sampling period to achieve coordinated adaptive adjustment of feedforward control quantity and feedback control quantity at the periodic time scale.

[0011] In one possible design, based on the temperature control operation stage, the corresponding feedforward weight and feedback weight are selected from a preset weight scheduling table according to the control quantity weight selection strategy.

[0012] The control quantity weight selection strategy includes:

[0013] When the temperature control operation stage is a disturbance-dominated stage, under the premise of satisfying the weight constraint conditions, a matching weight pair with a feedforward weight greater than the feedback weight is selected from the weight scheduling table.

[0014] When the temperature control operation stage is a steady-state control stage, under the premise of satisfying the weight constraint conditions, a matching weight pair with a feedforward weight less than the feedback weight is selected from the weight scheduling table;

[0015] When the temperature control operation phase is a transition phase, under the premise of satisfying the weight constraint conditions, a matching weight pair in the weight scheduling table is selected where the feedforward weight is equal to the feedback weight.

[0016] In one possible design, the sampled data includes feedforward control quantity, feedback control quantity, actual temperature, target temperature, and execution response delay;

[0017] The criteria for determining overshoot, undershoot, or response lag are as follows:

[0018] When the actual temperature is greater than the sum of the target temperature and the target temperature threshold, it is determined to be overshoot;

[0019] When the actual temperature is less than the difference between the target temperature and the target temperature threshold, it is determined to be under-adjusted;

[0020] When the execution response delay is greater than the reference delay threshold, it is determined to be a response lag.

[0021] In one possible design, the temperature error, error change rate, feedforward control quantity change rate, and feedback control quantity change rate are calculated based on the sampled data, and combined with the execution response delay to form a set of physical quantities.

[0022] The disturbance intensity index is calculated based on each parameter in the set of physical quantities and is used to characterize the disturbance amplitude of the semiconductor device control system in the current sampling period.

[0023] In one possible design, the preset task templates in the temperature control task template library include heating power adjustment task templates, execution delay compensation task templates, temperature deviation fine-tuning task templates, and compensation suppression task templates, wherein:

[0024] When the semiconductor device control system is in the disturbance-dominated stage and the disturbance intensity index is greater than the preset disturbance threshold, the heating power adjustment task is instantiated based on the heating power adjustment task template.

[0025] When the semiconductor device control system is in the disturbance-dominated or transitional phase, and the execution response delay exceeds a preset reference delay threshold, an execution delay compensation task is instantiated based on the execution delay compensation task template.

[0026] When the semiconductor device control system is in a steady-state control phase and the temperature error exceeds a preset temperature error threshold, a temperature deviation fine-tuning task is instantiated based on the temperature deviation fine-tuning task template.

[0027] When the semiconductor device control system is in a steady-state control phase or a transition phase, and the proportion of the feedforward component in the integrated control signal exceeds a preset ratio threshold, a compensation and suppression task is instantiated based on the compensation and suppression task template.

[0028] In one possible design, the execution unit includes an execution power supply unit, a control command output unit, a comprehensive control signal calculation unit, and a data feedback channel;

[0029] The semiconductor device control system maps each temperature control task in the temperature control task queue to a corresponding execution unit and performs corresponding operations based on the type of temperature control task, including:

[0030] When the temperature control task is a heating power adjustment task, it is mapped to the execution power supply unit. The integrated control signal serves as the control input parameter of the execution power supply unit, used to adjust the output power and realize real-time temperature adjustment.

[0031] When the temperature control task is to perform a delay compensation task, it is mapped to the control command output unit to extend the duration of the integrated control signal in order to eliminate the time difference between the integrated control signal and the temperature response.

[0032] When the temperature control task is a temperature deviation fine-tuning task, it is mapped to the data feedback channel. Without changing the feedforward control quantity, the feedback control quantity is slightly corrected according to a preset correction coefficient, and the comprehensive control signal is updated based on the corrected feedback control quantity.

[0033] When the temperature control task is a compensation and suppression task, it is mapped to the integrated control signal calculation unit, the feedforward weight is attenuated according to the preset compensation ratio coefficient, and the feedback weight and integrated control signal are updated accordingly.

[0034] Secondly, this application provides a semiconductor device feedforward and feedback coordinated control system, comprising:

[0035] The temperature control operation phase identification module sets a sampling period. In each sampling period, it acquires sampling data from the semiconductor device control system, calculates temperature error and disturbance intensity index based on the sampling data, and determines the current temperature control operation phase by combining the preset error threshold. The temperature control operation phase includes a disturbance-dominated phase, a steady-state control phase, and a transition phase.

[0036] The integrated control signal fusion calculation module performs a weighted summation of the feedforward control quantity and the feedback control quantity based on the feedforward weight and the feedback weight to obtain the integrated control signal. When the temperature response shows overshoot, undershoot or response lag, an adaptive weight correction strategy is used to fine-tune the feedforward weight and update the feedback weight and the integrated control signal simultaneously.

[0037] The task scheduling and coordination mechanism module selects the corresponding task template from the temperature control task template library based on the temperature control operation stage and triggering conditions to instantiate temperature control tasks, generates the temperature control task queue for the current sampling period, assigns priority weights to each temperature control task based on the disturbance intensity index and execution response delay, and maps multiple types of temperature control tasks, including heating power adjustment tasks, execution delay compensation tasks, temperature deviation fine-tuning tasks, and compensation suppression tasks, to the corresponding execution units. The module also drives the dynamic scheduling and execution of each execution unit in different temperature control operation stages based on the integrated control signal.

[0038] Thirdly, this application provides an electronic device, comprising:

[0039] Processor; and,

[0040] Memory for storing the executable instructions of the processor;

[0041] The processor is configured to perform any of the possible methods described in the first aspect by executing the executable instructions.

[0042] Fourthly, this application provides a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, are used to implement any of the possible methods described in the first aspect.

[0043] Compared with the prior art, this application has the following beneficial effects:

[0044] This application provides a method, system, device, and medium for coordinated feedforward and feedback control of semiconductor equipment. The method identifies the temperature control operation phase of the semiconductor equipment control system within a sampling period, achieving coordinated adjustment of feedforward and feedback control quantities. Compared to existing technologies where feedforward and feedback operate independently with delayed response, this application can automatically adjust the ratio of feedforward and feedback weights according to different temperature control operation phases, exhibiting rapid response capabilities during disturbance-dominated phases and maintaining high temperature stability during steady-state control phases. By introducing a task scheduling coordination mechanism, the integrated control signal is linked to the temperature control task execution process, enabling the semiconductor equipment control system to complete integrated control signal calculation, task allocation, and execution within the same sampling period. This significantly improves the response speed and control accuracy of the temperature control process in wafer manufacturing equipment, ensuring process stability and product consistency.

[0045] Furthermore, this application optimizes the selection of feedforward and feedback weights, the instantiation of temperature control tasks, and the execution mapping. Through a preset weight scheduling table and a temperature control task template library, appropriate feedforward weights, feedback weights, and task types can be automatically matched at different temperature control operation stages, achieving dynamic control logic of priority compensation during disturbance stages and fine-tuning during steady-state stages. This application achieves adaptive optimization of the temperature control strategy without changing the hardware structure, significantly enhancing the anti-disturbance capability and temperature control consistency of semiconductor devices under complex operating conditions. Attached Figure Description

[0046] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0047] Figure 1 This is a schematic flowchart illustrating a semiconductor device feedforward and feedback coordinated control method according to an example embodiment of this application;

[0048] Figure 2 This is a schematic flowchart illustrating the integrated control signal fusion calculation according to an example embodiment of this application;

[0049] Figure 3 This is a flowchart illustrating a task scheduling and coordination mechanism according to an example embodiment of this application;

[0050] Figure 4This is a schematic diagram of the structure of a semiconductor device feedforward and feedback coordinated control system according to an example embodiment of this application;

[0051] Figure 5 This is a schematic diagram of the structure of an electronic device according to an example embodiment of this application.

[0052] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0053] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0054] The semiconductor equipment feedforward and feedback coordinated control method, system, device, and medium proposed in this embodiment are applicable to the temperature control stage in wafer manufacturing equipment, especially in processes such as metal via filling, annealing baking, and thin film deposition, which have high requirements for temperature response speed and stability. This embodiment identifies the temperature control operation stage within the sampling period, dynamically allocates feedforward and feedback weights, and combines a task scheduling coordination mechanism to coordinate heating power adjustment, delay compensation, deviation fine-tuning, and compensation suppression tasks in real time. This enables the wafer manufacturing equipment to quickly recover the target temperature during disturbance stages and maintain high-precision and low-fluctuation thermal control effects during steady-state stages, thereby significantly improving the stability and consistency of the wafer process.

[0055] In this embodiment, the semiconductor device control system is used to comprehensively manage and execute the temperature control process of the semiconductor device, including functional modules such as data acquisition, task scheduling, and instruction issuance.

[0056] When a semiconductor device control system performs a temperature control task, its temperature control process is divided into three stages based on the disturbance intensity index, temperature error, and execution response delay: the disturbance-dominated stage, the steady-state control stage, and the transition stage. Therefore, in this embodiment, the temperature control stage refers to the operating state of the semiconductor device control system when performing the temperature control task.

[0057] Figure 1 This is a schematic flowchart illustrating a semiconductor device feedforward and feedback coordinated control method according to an example embodiment of this application. Figure 1As shown, the semiconductor device feedforward and feedback coordinated control method provided in this embodiment includes:

[0058] Step S101: Identify the temperature control operation stage, set the sampling period, and obtain sampling data from the semiconductor device control system in each sampling period. Calculate the temperature error and disturbance intensity index based on the sampling data, and determine the current temperature control operation stage in combination with the preset error threshold. The temperature control operation stage includes the disturbance-dominated stage, the steady-state control stage, and the transition stage.

[0059] In this step, firstly, the sampling period Δt is set (e.g., Δt=10ms or Δt=100ms). The sampling period runs synchronously with the execution cycle of the semiconductor device control system to ensure that the identification of the temperature control operation stage, the fusion calculation of the integrated control signal, and the task scheduling coordination mechanism are completed under the same control timing, avoiding delays or phase misalignments between data sampling and control command updates.

[0060] Within each sampling period, temperature control operation phase identification, integrated control signal fusion calculation, and task scheduling coordination mechanism are executed sequentially to achieve coordinated adaptive adjustment of feedforward control quantity and feedback control quantity at the periodic time scale.

[0061] After setting the sampling period, based on the set sampling period, in each sampling period, sampling data including feedforward control quantity, feedback control quantity, actual temperature, target temperature and execution response delay are acquired in real time from the semiconductor device control system.

[0062] In this implementation, the feedforward control quantity, feedback control quantity, actual temperature, target temperature, and execution response delay in the sampled data are all provided by the semiconductor device control system. Among them:

[0063] Feedforward control variables are used to characterize the active compensation variables generated based on the detection or prediction results of external disturbances.

[0064] The feedback control quantity is used to characterize the correction quantity calculated based on the error between the real-time temperature sampling and the target temperature.

[0065] Execution response delay is used to characterize the time difference between the issuance of the integrated control signal and the occurrence of a temperature response in a semiconductor device. In this embodiment, the temperature response is the physical process by which the actual temperature of the semiconductor device begins to change after the integrated control signal is applied. The semiconductor device control system detects the first occurrence of this change using a temperature sensor and records the corresponding timestamp as the temperature response timestamp t. resp .

[0066] The execution response delay is calculated by the semiconductor device control system using the synchronization timestamp difference, specifically the timestamp t of the integrated control signal. cmdTime stamp t of temperature response resp The difference between them. The expression for the execution response delay is:

[0067]

[0068] Among them, t resp The timestamp for the temperature response; t cmd For the integrated control signal U final (t) The timestamp of the time of issuance.

[0069] It should be noted that this embodiment does not limit the specific generation methods of feedforward control and feedback control, but focuses on adaptive coordination and task scheduling of the semiconductor device control system under the premise that both have been obtained.

[0070] After obtaining the sampled data, the temperature error, error change rate, feedforward control quantity change rate, and feedback control quantity change rate are calculated based on the sampled data, and combined with the execution response delay to form a set of physical quantities.

[0071] The disturbance intensity index is calculated based on parameters in the set of physical quantities and is used to characterize the disturbance amplitude of the semiconductor device control system within the current sampling period. Specifically:

[0072] Based on the sampled data, the temperature error and error rate of change within the current sampling period are calculated. Simultaneously, the rates of change of the feedforward control quantity and the feedback control quantity are calculated, thus obtaining a set of physical quantities used to determine the temperature control operation phase. Among them:

[0073] Temperature error is:

[0074]

[0075] Where t is the current sampling time corresponding to the current sampling period; T target (t) represents the target temperature for the current sampling period; T actual (t) represents the actual temperature during the current sampling period.

[0076] The error change rate is:

[0077]

[0078] Where t is the current sampling time corresponding to the current sampling period; e(t) is the temperature error of the current sampling period; Δt is the sampling period (e.g., 10 ms or 100 ms), which is the fixed time interval between two adjacent calculations; e(t-Δt) is the temperature error of the previous sampling period.

[0079] The rate of change of the feedforward control quantity is:

[0080]

[0081] Where t is the current sampling time corresponding to the current sampling period; U ff (t) represents the feedforward control quantity for the current sampling period; U ff (t-△t) is the feedforward control quantity of the previous sampling period.

[0082] The rate of change of the feedback control quantity is:

[0083]

[0084] Where t is the current sampling time corresponding to the current sampling period; U fb (t) represents the feedback control quantity for the current sampling period; U fb (t-△t) is the feedback control quantity of the previous sampling period.

[0085] Based on temperature error, error rate of change, feedforward control rate of change, feedback control rate of change, and execution response delay, the set of physical quantities {e(t), de(t) / dt, ΔU} is obtained. ff (t), △U fb (t), △t exec (t)}.

[0086] In this embodiment, since the error rate of change, the feedforward control rate of change, the feedback control rate of change, and the execution response delay have different physical dimensions, in order to ensure the consistency of the disturbance intensity index calculation in a physical sense, the error rate of change, the feedforward control rate of change, the feedback control rate of change, and the execution response delay are dimensionless before the comprehensive calculation of the set of physical quantities.

[0087] The dimensionless processing employs a normalization method, which involves calculating the ratios of the error rate of change, the feedforward control rate of change, the feedback control rate of change, and the execution response delay to their corresponding reference values. This eliminates the differences in physical dimensions, yielding dimensionless parameters for calculating the disturbance intensity index. Specifically:

[0088] The dimensionless representation of the rate of change of error is expressed as:

[0089]

[0090] in, E represents the absolute value of the rate of change of error, used to characterize the speed and drasticness of temperature difference changes; ref This is the preset reference error change rate.

[0091] The dimensionless representation of the rate of change of the feedforward control variable is expressed as follows:

[0092]

[0093] in, U is the absolute value of the rate of change of the feedforward control quantity, used to characterize the magnitude of change of the feedforward control quantity within adjacent cycles; ff,ref This is the preset rate of change of the reference feedforward control quantity.

[0094] The dimensionless representation of the rate of change of the feedback control quantity is expressed as:

[0095]

[0096] in, U is the absolute value of the rate of change of the feedback control quantity, used to characterize the magnitude of change of the feedback control quantity within adjacent periods; fb,ref The preset reference feedback control variable change rate.

[0097] The dimensionless processing of the response delay is represented as follows:

[0098]

[0099] in, The execution response delay for the current sampling period; t ref This is a preset reference execution response latency threshold.

[0100] It should be noted that the reference error change rate, reference feedforward control quantity change rate, reference feedback control quantity change rate, and reference execution response delay threshold are all preset reference values ​​used to characterize the corresponding physical quantities of the semiconductor device control system under normal operating conditions. Each reference value can be set according to the historical operating characteristics of the equipment, system calibration results, or process requirements. In this embodiment, the specific range or specific value of the reference error change rate, reference feedforward control quantity change rate, reference feedback control quantity change rate, and reference execution response delay threshold is not limited.

[0101] Based on the dimensionless error change rate, feedforward control variable change rate, feedback control variable change rate, and execution response delay, the disturbance intensity index within the current sampling period is calculated:

[0102]

[0103] in, All of these are preset weighting coefficients used to balance the weights of each parameter in the set of physical quantities. The weighting coefficients are positive real numbers and are set empirically based on the performance requirements of semiconductor devices. This represents the rate of change of error after dimensionless processing; The rate of change of the feedforward control quantity after dimensionless processing; The rate of change of the feedback control quantity after dimensionless processing; Execution response delay after dimensionless processing.

[0104] It should be noted that the semiconductor device control system has the ability to continuously acquire data on feedforward control quantities, feedback control quantities, actual temperature, target temperature, and execution response delay. However, in this embodiment, in order to ensure the consistency of the calculation timing, the sampling data acquisition operation is only performed once at the beginning of each sampling period, and the sampling data is updated again in the next sampling period.

[0105] Based on the disturbance intensity index and the preset error threshold, the temperature control operation stage of the semiconductor equipment control system is determined. The error threshold includes a first disturbance threshold, a second disturbance threshold, and a temperature error threshold, wherein:

[0106] When the disturbance intensity index is greater than the first disturbance threshold, the temperature control operation stage is determined to be the disturbance-dominated stage.

[0107] When the disturbance intensity index is less than the second disturbance threshold and the temperature error is less than the temperature error threshold, the temperature control operation stage is judged to be the steady-state control stage.

[0108] When the disturbance intensity index is less than or equal to the first disturbance threshold, and the disturbance intensity index is greater than or equal to the second disturbance threshold, and the temperature error is greater than or equal to the temperature error threshold, the temperature control operation stage is a transition stage.

[0109] The disturbance-dominated phase is when the semiconductor device control system detects a significant disturbance, and the main focus is on rapid compensation; the steady-state control phase is when the actual temperature measured by the semiconductor device control system is close to the target temperature, and the main focus is on fine-tuning and ensuring stability; the transition phase is the phase from disturbance recovery to steady state.

[0110] It should be noted that the first disturbance threshold, the second disturbance threshold, and the temperature error threshold are all positive real-valued parameters preset based on the thermal inertia characteristics, sampling accuracy, and allowable temperature fluctuation range of the semiconductor equipment. The first disturbance threshold is greater than the second disturbance threshold and is used to distinguish between significant disturbances and steady-state fluctuations. The temperature error threshold is determined according to the process temperature control accuracy requirements and is between 0.1℃ and 5℃.

[0111] By identifying the periodically executed temperature control operation phases, the semiconductor device control system can dynamically detect key parameters such as the rate of temperature change, execution response delay, and disturbance amplitude in the physical dimension, and determine the current temperature control operation phase in real time.

[0112] The identification results during the temperature control operation phase provide a basis for the subsequent adaptive correction of feedforward and feedback weights and the scheduling of temperature control tasks, enabling the semiconductor equipment control system to have operating condition adaptability. It can automatically adjust the composition ratio of the comprehensive control signal according to the changes in disturbance intensity index and temperature error, thereby achieving coordinated control of feedforward and feedback at different stages.

[0113] In the disturbance-dominant phase, the semiconductor device control system adjusts the power command amplitude based on the integrated control signal to quickly offset the temperature change trend. In the steady-state control phase, the semiconductor device control system finely corrects the feedback component of the integrated control signal to keep the actual temperature close to the target temperature. In the transition phase, the semiconductor device control system dynamically balances the weight ratio of the feedforward channel and the feedback channel to achieve a smooth transition and continuous stability in the temperature control process.

[0114] Step S102: Integrated control signal fusion calculation. The feedforward control quantity and the feedback control quantity are weighted and summed according to the feedforward weight and the feedback weight to obtain the integrated control signal. When the temperature response shows overshoot, undershoot or response lag, the feedforward weight is finely adjusted using an adaptive weight correction strategy, and the feedback weight and the integrated control signal are updated synchronously.

[0115] In this step, the semiconductor device control system performs weighted fusion calculations on the feedforward control quantity and the feedback control quantity based on the identified temperature control operation stage to generate a comprehensive control signal.

[0116] In this embodiment, the feedforward control quantity is used to reflect the prediction and compensation of external disturbances, while the feedback control quantity is used to reflect the correction and adjustment of real-time temperature errors. Based on the proportional relationship between the feedforward weight and the feedback weight, this embodiment enables the integrated control signal to achieve an adaptive balance between rapid response and steady-state correction under different operating conditions.

[0117] When overshoot, undershoot, or hysteresis is detected in the temperature response, the feedforward weights are dynamically fine-tuned based on the adaptive weight correction strategy, and the feedback weights and integrated control signals are updated simultaneously, so that the control process has continuous dynamic optimization capabilities.

[0118] Through this integrated control signal fusion calculation, external disturbances can be quickly offset during the disturbance-dominant phase, and temperature stability can be automatically maintained during the steady-state control phase. Real-time coordination between feedforward and feedback is achieved, giving the integrated control signal higher response sensitivity and long-term steady-state accuracy.

[0119] Step S103: Task scheduling and coordination mechanism. Based on the temperature control operation stage and triggering conditions, select the corresponding task template from the temperature control task template library to instantiate the temperature control task, generate the temperature control task queue for the current sampling period, assign priority weights to each temperature control task in combination with the disturbance intensity index and execution response delay, and map multiple types of temperature control tasks, including heating power adjustment tasks, execution delay compensation tasks, temperature deviation fine-tuning tasks and compensation suppression tasks, to the corresponding execution units. Combine the comprehensive control signal to drive the dynamic scheduling and execution of each execution unit in different temperature control operation stages.

[0120] In this step, the semiconductor device control system uses the comprehensive control signal as the unified control reference for temperature control execution. Based on the current temperature control operation stage and triggering conditions, it instantiates different types of temperature control tasks from the preset temperature control task template library and generates the temperature control task queue for the current sampling period.

[0121] Simultaneously, by combining the disturbance intensity index and the execution response delay, priority weights are assigned to each temperature control task, and the temperature control tasks in the temperature control task queue are sorted according to the priority weights to determine the execution order of each temperature control task.

[0122] Then, the various types of temperature control tasks are mapped to the corresponding execution units. The control system issues comprehensive control signals in sequence according to the task priority to complete the parallel scheduling and resource coordination of multiple tasks, and realize the coordinated execution of heating, compensation, correction and suppression.

[0123] This step, by introducing task templates and a priority scheduling mechanism, can automatically match the most suitable control task according to different temperature control operation stages, achieving adaptive hierarchical temperature control logic. This task scheduling and coordination mechanism significantly improves the response speed and control accuracy of semiconductor equipment in different temperature control operation stages, ensuring the continuity of the temperature control process and the overall stability of system operation.

[0124] Figure 2 This is a schematic flowchart illustrating the integrated control signal fusion calculation according to an example embodiment of this application. For example... Figure 2 As shown, the integrated control signal fusion calculation method provided in this embodiment includes:

[0125] In this step, under the premise of identifying the temperature control operation phase of the semiconductor device control system in the current sampling period, the fusion method of the feedforward control quantity and the feedback control quantity is dynamically adjusted so that the feedforward control quantity and the feedback control quantity have adaptive characteristics for different operating conditions.

[0126] Feedforward component W ff (t)·U ff (t) is used to characterize the predictive regulation effect of feedforward control on temperature change trends. Wherein, W ff(t) represents the feedforward weight for the t-th acquisition cycle, U ff (t) is the feedforward control variable for the t-th acquisition cycle.

[0127] Feedback component W fb (t)·U fb (t) is used to characterize the correction effect of feedback control on the actual temperature error. Where W fb (t) represents the feedback weight for the t-th acquisition cycle, U fb (t) represents the feedback control quantity for the t-th acquisition cycle.

[0128] Step S1021: According to the temperature control operation stage, select the corresponding feedforward weight and feedback weight from the preset weight scheduling table according to the control quantity weight selection strategy.

[0129] In this step, the feedforward weights and feedback weights must satisfy the following weight constraints:

[0130]

[0131] Where t is the current sampling time corresponding to the current sampling period; W ff (t) represents the feedforward weight for the current sampling period; W fb (t) represents the feedback weight for the current sampling period.

[0132] Control quantity weight selection strategies include:

[0133] When the temperature control operation stage is a disturbance-dominated stage, under the premise of satisfying the weight constraint conditions, a matching weight pair with a feedforward weight greater than the feedback weight is selected from the weight scheduling table.

[0134] When the temperature control operation stage is a steady-state control stage, under the premise of satisfying the weight constraint conditions, a matching weight pair with a feedforward weight less than the feedback weight is selected from the weight scheduling table;

[0135] When the temperature control operation phase is a transition phase, under the premise of satisfying the weight constraint conditions, a matching weight pair in the weight scheduling table is selected where the feedforward weight is equal to the feedback weight.

[0136] It should be noted that when there are multiple matching weight pairs that meet the conditions in the preset weight scheduling table, the semiconductor device control system determines a unique matching weight pair according to the preset weight selection rules. For example, it prioritizes selecting the matching item with the smallest difference from the matching weight pair selected in the previous sampling period to ensure the smoothness of the changes in feedforward weights and feedback weights.

[0137] Step S1022: Based on the feedforward weight and feedback weight, perform weighted fusion calculation on the feedforward control quantity and the feedback control quantity to generate a comprehensive control signal.

[0138] In this step, the integrated control signal serves as the control input parameter for the power supply unit, driving the unit to perform temperature regulation operations during the temperature control task scheduling and execution phase.

[0139] The formula for calculating the integrated control signal is:

[0140]

[0141] Where t is the current sampling time corresponding to the current sampling period; W ff (t) represents the feedforward weight for the current sampling period; W fb (t) represents the feedback weight for the current sampling period; U ff (t) represents the feedforward control quantity for the current sampling period; U fb (t) represents the feedback control quantity for the current sampling period; W ff (t)·U ff (t) represents the feedforward component of the integrated control signal for the current sampling period; W fb (t)·U fb (t) represents the feedback component of the integrated control signal in the current sampling period.

[0142] Step S1023: When the temperature response of the semiconductor device control system exhibits overshoot, undershoot, or lag, an adaptive weight correction strategy is adopted to fine-tune the feedforward weights and simultaneously update the feedback weights and the integrated control signal.

[0143] In this step, the purpose of fine-tuning the feedforward and feedback weights is to adapt to environmental conditions and long-term changes in semiconductor equipment. This is because, during the temperature control process of semiconductor equipment, factors such as changes in ambient temperature, aging of heating lamps, thermal sensor drift, and hysteresis of the actuator can cause the thermal inertia and response characteristics of the semiconductor equipment to drift slowly.

[0144] To avoid the failure of fixed weights due to these non-sudden changes, this step uses an adaptive weight correction strategy to automatically optimize the ratio of feedforward control to feedback control as the semiconductor device's state and environmental conditions change. This ensures the long-term stability and rapid response capability of the semiconductor device control system without readjusting the feedforward and feedback control.

[0145] Specifically, when an overshoot, undershoot, or lag is detected in the temperature response of the semiconductor device control system, the feedforward weights are fine-tuned according to the direction of the temperature error.

[0146] The criteria for judging overshoot, undershoot, or response lag are as follows:

[0147] When the actual temperature is greater than the sum of the target temperature and the target temperature threshold, it is determined to be overshoot, and the expression is:

[0148]

[0149] Where t is the current sampling time of the current sampling period; T actual (t) represents the actual temperature during the current sampling period; T target (t) represents the target temperature for the current sampling period; △T allow A preset target temperature threshold is used to limit the allowable range of temperature fluctuations, ΔT. allow The value is preset to a positive real number between 0.2℃ and 3℃ based on the temperature control accuracy of the semiconductor equipment and the sampling accuracy of the sensor, in order to balance temperature response sensitivity and stability.

[0150] When the actual temperature is less than the difference between the target temperature and the target temperature threshold, it is determined to be under-adjusted, and the expression is:

[0151]

[0152] Where t is the current sampling time of the current sampling period; T actual (t) represents the actual temperature during the current sampling period; T target (t) represents the target temperature for the current sampling period; △T allow A preset target temperature threshold is used to limit the allowable range of temperature fluctuations, ΔT. allow The value is preset to a positive real number between 0.2℃ and 3℃ based on the temperature control accuracy of the semiconductor equipment and the sampling accuracy of the sensor, in order to balance temperature response sensitivity and stability.

[0153] When the execution response delay is greater than a reference delay threshold, it is determined to be a response lag, and the expression is:

[0154]

[0155] Where t is the current sampling time of the current sampling period; △t exec (t) represents the execution response delay for the current sampling period; △t ref A preset reference delay threshold is used to determine whether the actuator's response is lagging, Δt ref The value is preset to a positive real number between 0.05 s and 5 s based on the thermal response time constant of the semiconductor device, to ensure that the system remains stable within the normal response range.

[0156] The adaptive weight adjustment strategy is implemented using the following calculation formula:

[0157]

[0158] Where t is the current sampling time of the current sampling period; k p k is the proportional adjustment coefficient used to control the sensitivity of feedforward weight updates. p The value of is preset to a positive real number between 0.01 and 0.2 based on the ratio of the thermal response time constant of the semiconductor device to the control cycle, in order to achieve a balance between response speed and stability; sign(e(t)) is the temperature error sign function, used to determine the direction of the temperature error. When e(t)>0, sign(e(t))=1, when e(t)<0, sign(e(t))=-1, and when e(t)=0, sign(e(t))=0, to determine the direction of increase or decrease of the feedforward weight adjustment; e(t) is the temperature error of the current sampling period; ΔW is the weight update step size, representing the amplitude of a single update, used to prevent oscillations caused by over-adjustment. ΔW is preset based on empirical values ​​or the stability of the semiconductor device, and its value is a positive real number less than 0.05.

[0159] The formula for calculating the feedback weight update is as follows:

[0160]

[0161] Where t is the current sampling time of the current sampling period; W ff_update (t) represents the feedforward weights after fine-tuning for the current sampling period.

[0162] It should be noted that the adaptive weight correction strategy is a self-learning mechanism for feedforward weights and feedback weights. This embodiment introduces this self-learning mechanism to enable the collaborative relationship between feedforward control quantities and feedback control quantities to have the ability to continuously self-optimize, avoiding control rigidity or response lag caused by fixed weights, thereby improving the dynamic adaptability and long-term stability of the semiconductor device control system.

[0163] Figure 3 This is a flowchart illustrating a task scheduling and coordination mechanism according to an example embodiment of this application. For example... Figure 3 As shown, the task scheduling and coordination mechanism provided in this embodiment includes:

[0164] Step S1031: In each sampling period, based on the preset temperature control task template library, according to the temperature control operation stage and corresponding triggering conditions, the corresponding temperature control task is instantiated and the temperature control task queue for the current sampling period is generated.

[0165] In this step, the temperature control task template library contains various types of pre-set task templates for the semiconductor device control system. These templates store different types of temperature control tasks and their corresponding trigger conditions. The semiconductor device control system instantiates and generates corresponding temperature control tasks based on these templates, forming the temperature control task queue for the current sampling period. The pre-set task templates in the temperature control task template library include heating power adjustment task templates, execution delay compensation task templates, temperature deviation fine-tuning task templates, and compensation suppression task templates. Among them:

[0166] When the semiconductor device control system is in a disturbance-dominated phase and the disturbance intensity index exceeds a preset disturbance threshold, a heating power adjustment task is instantiated based on the heating power adjustment task template. The heating power adjustment task adjusts the power output command amplitude based on the integrated control signal to quickly compensate for temperature change trends and improve disturbance response speed.

[0167] When the semiconductor device control system is in a disturbance-dominated or transitional phase, and the execution response delay exceeds a preset reference delay threshold, an execution delay compensation task is instantiated based on the execution delay compensation task template. The execution delay compensation task compensates for timing deviations caused by execution delay by extending the duration of the integrated control signal, ensuring that the integrated control signal is synchronized with the temperature response.

[0168] When the semiconductor device control system is in a steady-state control phase and the temperature error |e(t)| exceeds a preset temperature error threshold, a temperature deviation fine-tuning task is instantiated based on the temperature deviation fine-tuning task template. The temperature deviation fine-tuning task is used to finely correct the feedback components of the integrated control signal, gradually bringing the actual temperature closer to the target temperature and maintaining steady-state accuracy.

[0169] When the semiconductor device control system is in a steady-state control phase or a transition phase, and the feedforward component W in the integrated control signal... ff (t)·U ff (t) The proportion exceeds the preset proportion threshold η ff (e.g. η) ff When the range is ∈ [0.6, 0.8], a compensation and suppression task is instantiated based on the compensation and suppression task template. The compensation and suppression task reduces the proportion of the feedforward component in the integrated control signal by dynamically attenuating the feedforward weights, thereby preventing temperature fluctuations caused by overcompensation.

[0170] Based on the temperature control task template library, the corresponding task templates are selected and instantiated according to the temperature control operation stage and triggering conditions of the semiconductor equipment control system, and a temperature control task queue for the current sampling period is generated.

[0171] It should be noted that by combining the task template with the temperature control operation stage identification results, the most suitable temperature control task can be automatically selected in different temperature control operation stages, thereby enabling the semiconductor equipment control system to maintain a balance between response speed and stability, and improve the continuity of disturbance recovery and steady-state maintenance and control accuracy.

[0172] Step S1032: Based on the temperature control task queue, combined with the disturbance intensity index and execution response delay, priority weights are assigned to each temperature control task in the temperature control task queue.

[0173] In this step, a priority weight is assigned to each temperature control task. The formula for calculating the priority weight is as follows:

[0174]

[0175] Where t is the current sampling time of the current sampling period; S d (t) represents the disturbance intensity index for the current sampling period; △t exec (t) represents the execution response delay for the current sampling period; △t ref A preset reference delay threshold is used to determine whether the actuator's response is lagging, Δt ref The values ​​are preset to positive real numbers between 0.05 s and 5 s based on the thermal response time constant of the semiconductor device; β1 and β2 are preset priority balance coefficients.

[0176] Step S1033: Sort the temperature control tasks in the temperature control task queue in descending order according to priority weights to determine the execution order of each temperature control task.

[0177] In this step, after assigning priority weights to each temperature control task, the temperature control tasks in the task queue are sorted in descending order. This sorting determines the execution order of each temperature control task. The semiconductor device control system issues control commands sequentially according to the sorting result, thereby realizing dynamic scheduling and resource allocation of temperature control tasks.

[0178] It should be noted that by introducing a priority allocation mechanism based on disturbance intensity index and execution response delay, the semiconductor device control system can automatically adjust the execution order of temperature control tasks according to the current operating conditions. During the disturbance phase, fast response tasks are executed first, and during the steady-state phase, fine correction tasks are executed first, thereby improving the response efficiency and stability of the semiconductor device control system.

[0179] Step S1034: The semiconductor equipment control system performs execution coordination and resource mapping for the temperature control task according to the task type and its execution unit.

[0180] In this step, the semiconductor device control system maintains multiple execution units for temperature control, including an execution power supply unit, a control command output unit, a comprehensive control signal calculation unit, and a data feedback channel.

[0181] The semiconductor device control system maps each temperature control task in the temperature control task queue to a corresponding execution unit and performs corresponding operations based on the type of temperature control task, including:

[0182] When the temperature control task is a heating power adjustment task, it is mapped to the execution power supply unit. The integrated control signal serves as the control input parameter of the execution power supply unit, used to adjust the output power and achieve real-time temperature regulation.

[0183] When the temperature control task is to perform a delay compensation task, it is mapped to the control command output unit to extend the duration of the integrated control signal, thereby eliminating the time difference between the integrated control signal and the temperature response.

[0184] When the temperature control task is a temperature deviation fine-tuning task, it is mapped to the data feedback channel, and the feedback control quantity is adjusted according to a preset correction coefficient γ without changing the feedforward control quantity. fb A small proportional correction is made, and the integrated control signal is updated based on the corrected feedback control quantity. The correction expression for the feedback control quantity is:

[0185]

[0186] Where t is the current sampling time of the current sampling period; γ fb This is the preset correction factor; U fb (t) represents the feedback control quantity for the current sampling period.

[0187] Update integrated control signals:

[0188]

[0189] Where t is the current sampling time of the current sampling period; The feedforward weights for the current sampling period; This is the feedforward control quantity for the current sampling period; The feedback weight for the current sampling period; This is the corrected feedback control value for the current sampling period.

[0190] When the temperature control task is a compensation and suppression task, it is mapped to the integrated control signal calculation unit and calculated according to the preset compensation ratio coefficient γ. ff For the feedforward weight W ∈ [0.8, 0.95] ff(t) is decayed, and the feedback weights and integrated control signals are updated accordingly. The expression for gradually decaying the feedforward weights is:

[0191]

[0192] Where t is the current sampling time of the current sampling period; This is the preset compensation ratio coefficient; This represents the feedforward weight for the current sampling period.

[0193] Update feedback weights:

[0194]

[0195] Where t is the current sampling time of the current sampling period; The updated feedforward weights for the current sampling period; This represents the updated feedback weight for the current sampling period.

[0196] Update integrated control signals:

[0197]

[0198] Where t is the current sampling time of the current sampling period; The updated feedforward weights for the current sampling period; This is the feedforward control quantity for the current sampling period; The updated feedback weights for the current sampling period; This is the feedback control quantity for the current sampling period.

[0199] When multiple temperature control tasks need to be executed in parallel within the same sampling period, the semiconductor device control system coordinates them based on the priority weights of the temperature control tasks and the occupancy status of the execution units, including:

[0200] When multiple temperature control tasks access the same execution unit and execution conflicts occur, the semiconductor device control system uses priority weight P. i (t) is the criterion for judgment, and temperature control tasks with higher priority weight values ​​are executed first;

[0201] When the execution units can work in parallel, the semiconductor device control system simultaneously issues multiple temperature control task instructions and executes multiple temperature control tasks in parallel.

[0202] It should be noted that the temperature deviation fine-tuning task and the compensation and suppression task are adaptive correction operations of the integrated control signal, used to dynamically optimize the amplitude or weight of the integrated control signal within the current sampling period. The updated signal from the temperature deviation fine-tuning task and the compensation and suppression task will serve as the input basis for the heating power adjustment task, and the execution power supply unit will perform the specific power output and temperature adjustment operations, thereby realizing a closed-loop connection of "algorithm correction - signal update - physical execution" and ensuring the continuous consistency of feedforward and feedback collaborative control between the computation layer and the execution layer.

[0203] This application introduces a mapping and coordination mechanism between temperature control tasks and execution units, enabling the semiconductor device control system to maintain execution stability and timing consistency under multi-task parallel conditions. This mechanism ensures that temperature control tasks of different types do not interfere with each other when sharing hardware resources, while improving the efficiency of issuing integrated control signals and the real-time performance of execution, thereby enhancing the reliability and controllability of the semiconductor device control system.

[0204] Step S1035: The semiconductor equipment control system sends the updated integrated control signal to the corresponding execution unit to drive the heating or cooling device to perform temperature regulation operation.

[0205] In this step, after completing the scheduling and resource mapping of the temperature control task, the semiconductor device control system sends the updated integrated control signal to the corresponding execution unit to drive the heating or cooling device to perform temperature regulation operation.

[0206] The power supply unit adjusts the output power or cooling intensity in real time based on the amplitude and direction of the integrated control signal to achieve precise control of the target temperature; the control command output unit ensures that the signal is sent and the sampling period is synchronized to maintain the continuity of the control timing.

[0207] During the temperature control process, the temperature sensor sampling unit continuously monitors the actual temperature change and sends the sampled data back to the semiconductor device control system to update the disturbance intensity index and temperature error for the next sampling cycle.

[0208] This step achieves a complete closed loop for integrated control signals from the algorithm layer to the physical execution layer. By completing the integrated control signal fusion calculation, task scheduling, and execution feedback within each sampling period, the semiconductor device control system can achieve rapid disturbance response and steady-state self-balancing control under different operating conditions, significantly improving the response speed, control accuracy, and operational stability of the temperature control process.

[0209] Figure 4 This is a schematic diagram illustrating the structure of a semiconductor device feedforward and feedback coordinated control system according to an example embodiment of this application. Figure 4As shown, the semiconductor device feedforward and feedback collaborative control system 400 provided in this embodiment includes: a temperature control operation stage identification module 410, a comprehensive control signal fusion calculation module 420, and a task scheduling collaborative mechanism module 430.

[0210] The temperature control operation stage identification module 410 sets a sampling period. In each sampling period, it acquires sampling data from the semiconductor device control system, calculates temperature error and disturbance intensity index based on the sampling data, and determines the current temperature control operation stage in combination with a preset error threshold. The temperature control operation stage includes a disturbance-dominated stage, a steady-state control stage, and a transition stage.

[0211] The integrated control signal fusion calculation module 420 performs a weighted summation of the feedforward control quantity and the feedback control quantity according to the feedforward weight and the feedback weight to obtain the integrated control signal. When the temperature response shows overshoot, undershoot or response lag, an adaptive weight correction strategy is used to fine-tune the feedforward weight and update the feedback weight and the integrated control signal simultaneously.

[0212] The task scheduling and coordination mechanism module 430 selects the corresponding task template from the temperature control task template library based on the temperature control operation stage and triggering conditions to instantiate the temperature control task, generates the temperature control task queue for the current sampling period, assigns priority weights to each temperature control task based on the disturbance intensity index and execution response delay, and maps multiple types of temperature control tasks, including heating power adjustment tasks, execution delay compensation tasks, temperature deviation fine-tuning tasks, and compensation suppression tasks, to the corresponding execution units. It also drives the dynamic scheduling and execution of each execution unit in different temperature control operation stages based on the comprehensive control signal.

[0213] Figure 5 This is a schematic diagram of the structure of an electronic device according to an example embodiment of this application. For example... Figure 5 As shown, the electronic device 500 provided in this embodiment includes: a processor 501 and a memory 502; wherein:

[0214] Memory 502 is used to store computer programs, and the memory may also be flash memory.

[0215] Processor 501 is used to execute the execution instructions stored in the memory to implement the various steps in the above method. For details, please refer to the relevant descriptions in the preceding method embodiments.

[0216] Alternatively, the memory 502 can be either standalone or integrated with the processor 501.

[0217] When the memory 502 is a device independent of the processor 501, the electronic device 500 may further include:

[0218] Bus 503 is used to connect the memory 502 and the processor 501.

[0219] This embodiment also provides a readable storage medium storing a computer program, which, when executed by at least one processor of an electronic device, enables the electronic device to perform the methods provided in the various embodiments described above.

[0220] This embodiment also provides a program product including a computer program stored in a readable storage medium. At least one processor of an electronic device can read the computer program from the readable storage medium, and the at least one processor executes the computer program to cause the electronic device to perform the methods provided in the various embodiments described above.

[0221] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the foregoing claims.

[0222] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope.

Claims

1. A method for coordinated feedforward and feedback control of semiconductor devices, characterized in that, The method comprises the following steps: temperature control operation phase identification, setting a sampling period, obtaining sampling data from a semiconductor device control system in each sampling period, calculating a temperature error and a disturbance intensity index based on the sampling data, and determining the current temperature control operation phase in combination with a preset error threshold, wherein the temperature control operation phase comprises a disturbance dominant phase, a steady-state control phase, and a transition phase; comprehensive control signal fusion calculation, weighted summation of the feedforward control quantity and the feedback control quantity according to the feedforward weight and the feedback weight to obtain the comprehensive control signal, and fine-tuning of the feedforward weight by using an adaptive weight correction strategy when the temperature response appears overshoot, undershoot, or response lag, and synchronous updating of the feedback weight and the comprehensive control signal; task scheduling coordination mechanism, instantiation of a temperature control task by selecting a corresponding task template from a temperature control task template library according to the temperature control operation phase and a trigger condition, generation of a temperature control task queue of the current sampling period, assignment of a priority weight to each temperature control task in combination with the disturbance intensity index and an execution response delay, and mapping of multiple types of temperature control tasks including a heating power adjustment task, an execution delay compensation task, a temperature deviation fine-tuning task, and a compensation suppression task to corresponding execution units, and driving of each execution unit in different temperature control operation phases in combination with the comprehensive control signal.

2. The semiconductor device feedforward and feedback collaborative control method of claim 1, wherein, The temperature control operation phase identification, the comprehensive control signal fusion calculation, and the task scheduling coordination mechanism are sequentially performed in each sampling period to realize the collaborative adaptive adjustment of the feedforward control quantity and the feedback control quantity at a cycle-level time scale.

3. The semiconductor device feedforward and feedback collaborative control method of claim 1, wherein, According to the temperature control operation phase, a corresponding feedforward weight and a feedback weight are selected from a preset weight scheduling table according to a control quantity weight selection strategy. The control quantity weight selection strategy comprises: when the temperature control operation phase is the disturbance dominant phase, a matching weight pair with the feedforward weight greater than the feedback weight is selected from the weight scheduling table under the premise of satisfying a weight constraint condition; when the temperature control operation phase is the steady-state control phase, a matching weight pair with the feedforward weight less than the feedback weight is selected from the weight scheduling table under the premise of satisfying the weight constraint condition; when the temperature control operation phase is the transition phase, a matching weight pair with the feedforward weight equal to the feedback weight is selected from the weight scheduling table under the premise of satisfying the weight constraint condition.

4. The semiconductor device feedforward and feedback collaborative control method of claim 1, wherein, The sampling data comprises a feedforward control quantity, a feedback control quantity, an actual temperature, a target temperature, and an execution response delay. The judgment conditions for the overshoot, the undershoot, or the response lag are as follows: when the actual temperature is greater than the sum of the target temperature and a target temperature threshold, it is determined as an overshoot; when the actual temperature is less than the difference between the target temperature and the target temperature threshold, it is determined as an undershoot; when the execution response delay is greater than a reference delay threshold, it is determined as a response lag.

5. The semiconductor device feedforward and feedback collaborative control method of claim 1, wherein, The temperature error, the error change rate, the feedforward control quantity change rate, and the feedback control quantity change rate are calculated based on the sampling data, and form a physical quantity set in combination with the execution response delay. The disturbance intensity index is calculated based on each parameter in the physical quantity set, and is used to represent the disturbance amplitude of the semiconductor device control system in the current sampling period.

6. The semiconductor device feedforward and feedback collaborative control method of claim 1, wherein, The preset task templates in the temperature control task template library include a heating power adjustment task template, an execution delay compensation task template, a temperature deviation fine-tuning task template, and a compensation inhibition task template, wherein: When the semiconductor device control system is in the disturbance dominant stage and the disturbance intensity index is greater than a preset disturbance threshold, a heating power adjustment task is instantiated based on the heating power adjustment task template; When the semiconductor device control system is in the disturbance dominant stage or the transition stage and the execution response delay exceeds a preset reference delay threshold, an execution delay compensation task is instantiated based on the execution delay compensation task template; When the semiconductor device control system is in the steady-state control stage and the temperature error exceeds a preset temperature error threshold, a temperature deviation fine-tuning task is instantiated based on the temperature deviation fine-tuning task template; When the semiconductor device control system is in the steady-state control stage or the transition stage and the feedforward component proportion in the integrated control signal exceeds a preset proportion threshold, a compensation inhibition task is instantiated based on the compensation inhibition task template.

7. The semiconductor device feedforward and feedback collaborative control method of claim 1, wherein, The execution unit includes an execution power supply unit, a control instruction output unit, an integrated control signal calculation unit, and a data feedback channel; The semiconductor device control system maps each temperature control task in the temperature control task queue to a corresponding execution unit and performs corresponding operations according to the type of the temperature control task, including: When the temperature control task is a heating power adjustment task, it is mapped to the execution power supply unit, and the integrated control signal is used as the control input parameter of the execution power supply unit to adjust the output power and realize real-time adjustment of the temperature; When the temperature control task is an execution delay compensation task, it is mapped to the control instruction output unit, the duration of the integrated control signal is extended, and the time difference between the integrated control signal and the temperature response is eliminated; When the temperature control task is a temperature deviation fine-tuning task, it is mapped to the data feedback channel, a small-scale proportional correction is made to the feedback control amount according to a preset correction coefficient without changing the feedforward control amount, and the integrated control signal is updated based on the corrected feedback control amount; When the temperature control task is a compensation inhibition task, it is mapped to the integrated control signal calculation unit, the feedforward weight is attenuated according to a preset compensation proportion coefficient, and the feedback weight and the integrated control signal are updated accordingly.

8. A semiconductor device feedforward and feedback cooperative control system, characterized by, It includes: A temperature control operation stage recognition module that sets a sampling period, acquires sampling data from the semiconductor device control system in each sampling period, calculates a temperature error and a disturbance intensity index based on the sampling data, and determines the current temperature control operation stage in combination with a preset error threshold, wherein the temperature control operation stage includes a disturbance dominant stage, a steady-state control stage, and a transition stage; An integrated control signal fusion calculation module that weights and sums the feedforward control amount and the feedback control amount according to the feedforward weight and the feedback weight to obtain the integrated control signal, and uses an adaptive weight correction strategy to fine-tune the feedforward weight when the temperature response has overshoot, undershoot, or response lag, and synchronously updates the feedback weight and the integrated control signal. The task scheduling coordination mechanism module selects corresponding task templates from the temperature control task template library according to the temperature control operation phase and the trigger condition, instantiates the temperature control task, generates a temperature control task queue of the current sampling period, assigns a priority weight to each temperature control task in combination with the disturbance intensity index and the execution response delay, and maps multiple types of temperature control tasks including a heating power adjustment task, an execution delay compensation task, a temperature deviation fine adjustment task, and a compensation suppression task to corresponding execution units, and drives each execution unit to perform dynamic scheduling and execution in different temperature control operation phases in combination with the comprehensive control signal.

9. An electronic device, comprising: Comprise: a processor; and a memory for storing executable instructions of the processor; wherein the processor is configured to execute the method of any one of claims 1 to 7 by executing the executable instructions.

10. A computer-readable storage medium, characterized in that, The computer readable storage medium stores computer execution instructions, and the computer execution instructions are executed by the processor to implement the method of any one of claims 1 to 7.

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