High-power electro-optical modulator

By turning the traveling wave electrode at the end of the waveguide in the lithium niobate electro-optic modulator, the electrode length is increased to increase transmission loss, thus solving the problem of thin film resistor overheating caused by high-power microwave input and improving the microwave power carrying capacity of the modulator.

CN121500622APending Publication Date: 2026-02-10BEIJING AEROSPACE TIMES OPTICAL ELECTRONICS TECH
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Patent Information

Application Number
CN202511780399.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-11-28
Publication Date
2026-02-10

AI Technical Summary

Technical Problem

Existing lithium niobate electro-optic modulators suffer from device damage due to increased film resistance temperature under high-power microwave input. Furthermore, extending the traveling wave electrode length reduces bandwidth and increases microwave-optical mismatch.

Method used

By turning the traveling wave electrode at the end of the waveguide, the electrode length is increased to increase transmission loss and reduce the amount of microwave energy reaching the output end. The length of the interaction region between the electrode and the waveguide is kept constant through an arc transition, thereby improving the high-power microwave carrying capacity.

Benefits of technology

Without affecting the device's bandwidth performance, the power of microwave energy reaching the load resistor is reduced, improving the modulator's ability to handle high-power microwaves and preventing overheating damage to the thin-film resistor.

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Abstract

The invention relates to a high-power electro-optical modulator, and belongs to the technical field of lithium niobate electro-optical modulators, the high-power electro-optical modulator comprises a substrate, a waveguide, a traveling wave electrode and a matching circuit, the matching circuit comprises a matching electrode, a load resistor and a gold wire, and the traveling wave electrode and the matching electrode are of a coplanar waveguide structure. And a signal electrode of the traveling wave electrode is connected with a signal electrode of the matching electrode through a gold wire. The traveling wave electrode turns at the tail end of the waveguide, microwave loss is increased by increasing the length of the traveling wave electrode, microwave energy reaching a microwave matching resistor at the output end of the traveling wave electrode is reduced, and the microwave energy is reduced under the conditions that the length of an electro-optical interaction area of the electrode and the waveguide is kept unchanged and the bandwidth performance of the device is not affected. And the length of the electrode on the chip is greatly increased, so that the bearing capacity of the modulator on high-power microwave input is greatly improved.
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