PIN junction type nuclear battery and preparation method thereof, power utilization device and power generation device

Abstract

The invention provides a PIN junction type nuclear battery and a preparation method thereof, a power utilization device and a power generation device, and the PIN junction type nuclear battery comprises at least one semiconductor structure; the semiconductor structure comprises a first electrode layer, a second electrode layer and a PIN unit located between the first electrode layer and the second electrode layer. Each PIN unit comprises a P-type semiconductor layer, an N-type semiconductor layer and an intrinsic semiconductor layer located between the P-type semiconductor layer and the N-type semiconductor layer; wherein the intrinsic semiconductor layer comprises a first radioactive element.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a PIN junction nuclear battery, a preparation method thereof, an electric device and a power generation device. BACKGROUND

[0002] In recent years, with the progress of science and technology, the research and application of micro-electro-mechanical systems have been rapidly developed. They generally have the characteristics of small size, small power, light weight, easy to move, stable performance, low cost and implantability. Among them, nuclear batteries have become the ideal choice for micro-electro-mechanical system power supply due to their miniaturization, integration, high energy density, long service life and independence from external energy. At present, the beta radiation voltage effect micro nuclear battery based on semiconductor devices (PN junction, PIN junction and Schottky diode) has been applied in the fields of aerospace exploration, deep sea and deep earth exploration, weather monitoring in harsh environments such as high mountains and polar regions, medical instruments and the like.

[0003] However, in the related technical solutions, the beta radiation voltage effect micro nuclear battery of the PIN junction has the problems of external radiation source and self-absorption of the radiation source, which leads to radiation energy loss and reduces the conversion efficiency of the nuclear battery. SUMMARY

[0004] Therefore, the present application provides a PIN junction nuclear battery, a preparation method thereof, an electric device and a power generation device. The energy conversion efficiency is effectively improved by adding a radioactive isotope in the intrinsic semiconductor layer.

[0005] In a first aspect, the present application provides a PIN junction nuclear battery, comprising: at least one semiconductor structure; the semiconductor structure comprises: a first electrode layer, a second electrode layer and a PIN unit between the first electrode layer and the second electrode layer; the PIN unit comprises: a P-type semiconductor layer, an N-type semiconductor layer and an intrinsic semiconductor layer between the P-type semiconductor layer and the N-type semiconductor layer; wherein the intrinsic semiconductor layer comprises a first radioactive element. By embedding a radioactive element in the intrinsic semiconductor layer, the radiation energy loss caused by the self-absorption phenomenon can be reduced, and the radioactive element can irradiate the intrinsic semiconductor layer it is in, thereby increasing the radiation angle of the radiation particles released by the radiation source.

[0006] In some embodiments, the first radioactive element is from one or more of the following radiation sources: an alpha type radiation source; a beta type radiation source; an X-ray radiation source; a gamma ray radiation source. The radiation particle energy of the radioactive elements of the above type radiation sources is suitable for the PIN junction nuclear battery of the present application, and the safety is high.

[0007] In some embodiments, in the PIN junction nuclear battery, the first radioactive element comprises one or more of americium-241, plutonium-238, promethium-147, carbon-14, nickel-63, tritium, and yttrium-90. These radioactive elements have relatively long half-lives or high safety, so that the battery can work stably for a long time or has high safety.

[0008] In some embodiments, in the PIN junction nuclear battery, the concentration d1 of the first radioactive element is 0 < d1 < 30 at.%. By setting the concentration of the first radioactive element in this range, the energy conversion efficiency of the nuclear battery can be effectively improved.

[0009] In some embodiments, in the PIN junction nuclear battery, the intrinsic semiconductor layer has a thickness of 20 nm to 350 nm. By setting the intrinsic semiconductor layer within this thickness, it can effectively absorb and utilize the energy released by the radiation source, and can adapt to different radiation sources.

[0010] In some embodiments, in the PIN junction nuclear battery, the first electrode layer has a thickness of 100 nm to 1000 nm. By setting the first electrode layer within this thickness range, it is beneficial to maximize the power density of the battery, and also beneficial to optimize the overall size of the nuclear battery.

[0011] In some embodiments, in the PIN junction nuclear battery, the second electrode layer has a thickness of 100 nm to 1000 nm. By setting the second electrode layer within this thickness range, it is beneficial to maximize the power density of the battery, and also beneficial to optimize the overall size of the nuclear battery.

[0012] In some embodiments, the first electrode layer and / or the second electrode layer comprises a second radioactive element. By irradiating the first electrode layer and / or the second electrode layer, the utilization rate of the radiation particle energy can be further improved.

[0013] In some embodiments, the second radioactive element is the same as or different from the first radioactive element. By using the same or different first and second radioactive elements, the nuclear battery of the present application can be diversified and suitable for different application scenarios.

[0014] In some embodiments, in the PIN junction nuclear battery, the second radioactive element comprises one or more of americium-241, plutonium-238, promethium-147, carbon-14, nickel-63, tritium, and yttrium-90. These radioactive elements have relatively long half-lives or high safety, so that the battery can work stably for a long time or has high safety.

[0015] In some embodiments, in the PIN junction nuclear battery, the concentration of the second radioactive element in the first electrode layer is the same as or different from the concentration of the second radioactive element in the second electrode layer. By setting the same concentration of the same or different radioactive elements in different electrode layers, the battery of the present application can be suitable for a variety of needs and applications.

[0016] In some embodiments, in the PIN junction nuclear battery, the concentration d2 of the second radioactive element in the first electrode layer is 0 < d2 ≤ 30 at.%. By setting the concentration of the second radioactive element in this range, the first electrode layer can be effectively irradiated, thereby effectively simplifying the device structure.

[0017] In some embodiments, in the PIN junction nuclear battery, the concentration d3 of the second radioactive element in the second electrode layer is 0 < d3 ≤ 30 at.%. By setting the concentration of the second radioactive element in this range, the second electrode layer can be effectively irradiated, thereby effectively simplifying the device structure.

[0018] In some embodiments, the nuclear battery comprises at least two semiconductor structures stacked along a first direction; the first direction is the stacking direction of the first electrode layer, the second electrode layer, and the PIN unit. By stacking at least two semiconductor structures, the energy density of the nuclear battery can be effectively improved.

[0019] In some embodiments, two semiconductor structures arranged adjacently share an electrode layer. By using the electrode layer as a common electrode layer of the stacked battery, the device structure can be effectively simplified, and the preparation process can be reduced.

[0020] In some embodiments, the at least two semiconductor structures are arranged in series or in parallel. By arranging the semiconductor structure units in series or in parallel, the battery of the present application can be suitable for a variety of needs and applications.

[0021] In some embodiments, in the case where the nuclear battery comprises two semiconductor structures arranged in series, there are sequentially arranged layers: the first electrode layer, the first N-type semiconductor layer, the first intrinsic semiconductor layer, the first P-type semiconductor layer, the second electrode layer, the second N-type semiconductor layer, the second intrinsic semiconductor layer, the second P-type semiconductor layer, and the third electrode layer. By arranging two semiconductor structures in series, the overall working voltage of the nuclear battery of the present application can be effectively increased.

[0022] In some embodiments, the nuclear battery includes two semiconductor structures arranged in parallel, and has the following layers arranged in sequence: a first electrode layer, a first N-type semiconductor layer, a first intrinsic semiconductor layer, a first P-type semiconductor layer, a second electrode layer, a second P-type semiconductor layer, a second intrinsic semiconductor layer, a second N-type semiconductor layer, and a third electrode layer. By arranging two semiconductor structures in parallel, the capacity and power output of the battery can be effectively improved.

[0023] In some embodiments, the N-type semiconductor layer includes an N-type diamond layer; the P-type semiconductor layer includes a P-type diamond layer; and the intrinsic semiconductor layer includes an intrinsic diamond layer containing the first radioactive element. Diamond has good thermal conductivity, high carrier mobility, and saturation velocity, so that the diamond nuclear battery can operate stably at a higher voltage and current, and can more efficiently collect and transport charge carriers, thereby having a relatively high conversion efficiency of the nuclear battery.

[0024] In a second aspect, the present application provides a method for preparing a PIN junction nuclear battery, wherein the nuclear battery includes at least one semiconductor structure; and the method for preparing the semiconductor structure includes: forming a P-type semiconductor layer / N-type semiconductor layer; forming an intrinsic semiconductor layer containing a first radioactive element on the P-type semiconductor layer / N-type semiconductor layer; forming an N-type semiconductor layer / P-type semiconductor layer on the intrinsic semiconductor layer; forming a first electrode layer on a side of the P-type semiconductor layer / N-type semiconductor layer away from the intrinsic semiconductor layer; and forming a second electrode layer on a side of the N-type semiconductor layer / P-type semiconductor layer away from the intrinsic semiconductor layer. By the above method, the PIN junction nuclear battery of the first aspect of the present application can be effectively prepared.

[0025] In some embodiments, the forming of the intrinsic semiconductor includes: forming the intrinsic semiconductor layer by depositing a precursor containing the first radioactive element. The deposition process is simple to operate and has high practicability, and is suitable for large-scale production.

[0026] In some embodiments, the method includes using microwave plasma chemical vapor deposition for the deposition. By microwave plasma chemical vapor deposition, the intrinsic semiconductor layer can be effectively formed.

[0027] In some embodiments, the first radioactive element includes one or more of americium-241, plutonium-238, promethium-147, carbon-14, nickel-63, tritium, and yttrium-90. These radioactive elements have a relatively long half-life or high safety, so that the battery can work stably for a long time or has high safety.

[0028] In some embodiments, the method comprises performing the deposition until an intrinsic semiconductor layer with a thickness of 20 nm to 350 nm is obtained. By forming an intrinsic semiconductor layer within this thickness, the intrinsic semiconductor layer can effectively absorb and utilize the energy released by the radioactive source.

[0029] In some embodiments, the method comprises controlling the flow rate of the precursor containing the first radioactive element to make the concentration d1 of the first radioactive element in the first electrode layer be: 0 < d1 ≤ 30 at.%. By setting the concentration of the first radioactive element, the energy conversion efficiency of the nuclear battery can be effectively improved.

[0030] In some embodiments, the method further comprises: doping the first electrode layer and / or the second electrode layer with a second radioactive element, so that the second electrode layer and / or the second electrode layer contain the second radioactive element. By doping the first electrode layer and / or the second electrode layer with a second radioactive element, the first electrode layer and / or the second electrode layer can be effectively irradiated, and the device structure is simplified.

[0031] In some embodiments, the method comprises: forming the first electrode layer and the second electrode layer by evaporation, and the thickness of the first electrode layer and the second electrode layer is 100 nm to 1000 nm. The evaporation process is simple to operate and has high practicability, and is suitable for large-scale production.

[0032] In some embodiments, the method comprises: controlling the evaporation rate of the raw material to make the concentration d2 of the second radioactive element in the first electrode layer range from 0 < d2 ≤ 30%; and / or, the concentration d3 of the second radioactive element in the second electrode layer range from 0 < d3 ≤ 30%. By forming the first electrode layer and the second electrode layer within this thickness, the power density of the battery can be maximized, and the overall size of the nuclear battery can also be optimized.

[0033] In a third aspect, the present application provides a power consuming device comprising the PIN junction nuclear battery of the first aspect of the present application or the PIN junction nuclear battery prepared by the preparation method of the second aspect of the present application, and the PIN junction nuclear battery is used to provide electric energy. The power consuming device comprises the PIN junction nuclear battery of the first aspect of the present application or the PIN junction nuclear battery prepared by the second aspect, and therefore has the same technical effects as the PIN junction nuclear battery or the above-mentioned method.

[0034] In a fourth aspect, the present application provides a power device comprising the PIN junction nuclear battery as described in the first aspect of the present application or the PIN junction nuclear battery prepared by the preparation method of the second aspect of the present application. The power device comprises the PIN junction nuclear battery of the first aspect of the present application or the PIN junction nuclear battery prepared by the second aspect, and thus has the same technical effects as the PIN junction nuclear battery or the above-mentioned method. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 Structure diagram of the PIN junction nuclear battery according to the present application;

[0036] Figure 2 Structure diagram of the PIN junction nuclear battery according to the present application;

[0037] Figure 3 Structure diagram of the nuclear battery with two semiconductor structures arranged in series according to the present application;

[0038] Figure 4 Structure diagram of the nuclear battery with multiple semiconductor structures arranged in series according to the present application;

[0039] Figure 5 Structure diagram of the nuclear battery with two semiconductor structures arranged in parallel according to the present application;

[0040] Figure 6 Structure diagram of the nuclear battery with multiple semiconductor structures arranged in parallel according to the present application.

[0041] Symbol markings: 110 - Semiconductor structure; 111 - First electrode layer; 112 - Second electrode layer; 113 - PIN cell; 114 - P-type semiconductor layer; 115 - N-type semiconductor layer; 116 - Intrinsic semiconductor layer; 117 - First radioactive element; 118 - Second radioactive element; 200 - Nuclear battery; 300 - Nuclear battery; 400 - Nuclear battery; 500 - Nuclear battery; 210 - First semiconductor structure; 220 - Second semiconductor structure; 201 - First electrode layer; 202 - First N-type semiconductor layer; 203 - First intrinsic semiconductor layer; 204 - First P-type semiconductor layer; 205 - Second electrode layer; 206 - Second N-type semiconductor layer Body layer; 207-Second intrinsic semiconductor layer; 208-Second P-type semiconductor layer; 209-Third electrode layer; 211-First radioactive element; 212-Second radioactive element; 410-Third semiconductor structure; 420-Fourth semiconductor structure; 401-First electrode layer; 402-First N-type semiconductor layer; 403-First intrinsic semiconductor layer (I layer); 404-First P-type semiconductor layer; 405-Second electrode layer; 406-Second P-type semiconductor layer; 407-Second intrinsic semiconductor layer (I layer); 408-Second N-type semiconductor layer; 409-Third electrode layer; 411-First radioactive element; 412-Second radioactive element. Detailed Implementation

[0042] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0043] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure may be practiced without one or more of these details. In other instances, to avoid confusion with this disclosure, certain technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0044] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0045] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0046] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0047] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0048] Unless otherwise specified, the terms used in this application have the common meanings as commonly understood by those skilled in the art.

[0049] Unless otherwise specified, the values ​​of the parameters mentioned in this application can be determined using various testing methods commonly used in the art, for example, according to the testing methods given in this application.

[0050] In this application, a "PIN junction nuclear battery" refers to a nuclear battery that sequentially comprises a P-type semiconductor layer, an intrinsic semiconductor layer (I layer), and an N-type semiconductor layer.

[0051] In this application, "P-type semiconductor layer" refers to a semiconductor layer that has been "P-type doped". "P-type doping" refers to the doping of a semiconductor material with a trivalent impurity element (such as boron) that can form an electrical path dominated by hole conduction.

[0052] In this application, "N-type semiconductor layer" refers to a semiconductor layer that has undergone "N-type doping". "N-type doping" refers to the doping of a semiconductor material with pentavalent impurity elements, which can form an electrical path that is mainly based on electron conduction.

[0053] In this application, "intrinsic semiconductor layer (I layer)" refers to a completely undoped intrinsic semiconductor layer.

[0054] In this application, "radioactive element" refers to an element that can spontaneously emit particles or rays (such as alpha rays, beta rays, X-rays, gamma rays, etc.) from its unstable atomic nucleus, releasing energy at the same time, and eventually decaying into a stable element and ceasing to emit radiation.

[0055] In this application, "at.%" refers to atomic percentage, which represents the percentage of atoms of a certain element in a substance. The atomic percentage is calculated as follows: divide the number of atoms of a certain element by the sum of the number of atoms of all elements to obtain the atomic percentage of that element.

[0056] To fully understand this disclosure, detailed steps and structures will be presented in the following description to illustrate the technical solutions of this disclosure. Preferred embodiments of this disclosure are described in detail below; however, other embodiments may also be implemented in addition to these detailed descriptions.

[0057] Nuclear batteries are miniature energy sources that use semiconductor materials to convert the decay energy of a radioactive source into electrical energy. They can be used in extremely harsh working environments such as the deep sea, deep space, and polar regions, where existing miniature energy sources cannot adapt to strong radiation, high vacuum, and difficulties in charging or replacing. They have important scientific and application value for human beings to go to deep space, deep sea, and polar regions.

[0058] The two most important components of a nuclear battery are the radiation unit (i.e., the radiation source) and the transducer unit. Currently, nuclear batteries mainly involve fabricating the radiation source as a planar thin film and placing it on the surface of a semiconductor transducer device. However, due to the external placement of the radiation source and its self-absorption effect, the ability to convert the decay energy of the radiation source into electrical energy is limited, resulting in low conversion efficiency and hindering the effective improvement of the nuclear battery's output performance. Therefore, a new solution is urgently needed to address these issues.

[0059] Based on this, this application provides a PIN junction type core battery, as referenced. Figure 1 , Figure 1 This disclosure provides a schematic diagram of a PIN junction nuclear battery structure according to an embodiment. The PIN junction nuclear battery includes at least one semiconductor structure 110. The semiconductor structure 110 includes a first electrode layer 111, a second electrode layer 112, and a PIN unit 113 located between the first electrode layer 111 and the second electrode layer 112. The PIN unit 113 includes a P-type semiconductor layer 114, an N-type semiconductor layer 115, and an intrinsic semiconductor layer 116 located between the P-type semiconductor layer 114 and the N-type semiconductor layer 115. The intrinsic semiconductor layer 116 includes a first radioactive element 117.

[0060] Thus, by embedding radioactive elements in the intrinsic semiconductor layer, the loss of radiation energy caused by self-absorption can be reduced. At the same time, the radioactive elements can also radiate the intrinsic semiconductor layer, thereby increasing the radiation angle of the particles released by the radiation source (for example, from about 2π solid angle to 4π solid angle), thereby improving the utilization rate of radiation particle energy.

[0061] When selecting a radioactive source, factors such as radiation type, radiation dose ratio, and half-life need to be considered. Based on this, the first radioactive element originates from one or more of the following radioactive sources: alpha-type source; beta-type source; X-ray source; gamma-ray source. The radiation particle energies of the radioactive elements from the above-mentioned types of sources are suitable for the PIN junction nuclear battery of this application and offer high safety.

[0062] For example, an alpha-type radioactive source is a radioactive source whose primary characteristic is the emission of alpha particles, such as Americium-241.

[0063] ( 241 Am) or its compounds, plutonium-238 ( 238 Pu) or its compounds, uranium-238 ( 238 U) or its compounds, 210 Po or its compounds, 228 Th or its compounds, 235 U or its compounds, 238 PuO2 microspheres, 242 Cm or its compounds and 244Cm or at least one of its compounds.

[0064] For example, a β-type radioactive source is a radioactive source characterized primarily by emitting β particles (electrons or positrons), such as promethium-147 (…). 147 Pm) or its compounds, carbon-14 ( 14 C) or its compounds, tritium or its compounds, nickel-63 ( 63 Ni) or its compounds, (C4H3) 3 H5-) n , 3 H2, Ti 3 H4 、35 S or its compounds, 63 Ni or its compounds 90 Sr or its compounds, 90 Sr / 90 Y、 99 Tc or its compounds, 106 Ru or its compounds 137 Cs or its compounds, 144 Ce or its compounds, 147 Pm or its compounds, 151 Sm or its compounds and 226 At least one of Ra or its compounds.

[0065] For example, an X-ray radiation source is a nuclide or its compound that is characterized by emitting X-rays, such as iron-55 (…). 55 Fe) or its compounds.

[0066] For example, a gamma-ray radiation source refers to a nuclide or its compound that is primarily characterized by emitting gamma rays, such as cobalt-60 (…). 60 Co) or its compounds.

[0067] In some embodiments, the first radioactive element may include one or more of Americium-241, Plutonium-238, Promethium-147, Carbon-14, Nickel-63, Tritium, and Yttrium-90. These radioactive elements have relatively long half-lives or high safety, thereby enabling the battery to operate stably for extended periods or to maintain high safety.

[0068] In some embodiments, the concentration d1 of the first radioactive element in the intrinsic semiconductor layer ranges from 0 to 30 at.%; the concentration d1 can be 0.5 at.%, 1 at.%, 5 at.%, 10 at.%, 20 at.%, 25 at.%, 30 at.%, etc., or a range consisting of any two of the above values. Optionally, the concentration d1 of the first radioactive element is 20 at.%. The concentration mentioned in this application can be understood as the doping concentration. By setting the concentration of the first radioactive element within this range, the energy conversion efficiency of the nuclear battery can be effectively improved.

[0069] In some embodiments, the thickness of the intrinsic semiconductor layer ranges from 20 nm to 350 nm, and can be 20 nm, 50 nm, 100 nm, 150 nm, 200 nm, 280 nm, 350 nm, etc., or any combination of two of the above values. By setting an intrinsic semiconductor layer within this thickness, it is possible to effectively absorb and utilize the energy released by the radiation source, and to adapt to different radiation sources.

[0070] In some embodiments, the thickness of the first electrode layer is between 100 nm and 1000 nm, and can be 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, etc., or a range consisting of any two of the above values. By setting the first electrode layer within this thickness range, it is beneficial to maximize the power density of the battery and also to optimize the overall size of the nuclear battery.

[0071] In some embodiments, the thickness of the second electrode layer is from 100 nm to 1000 nm, and can be 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, etc., or a range of any two of the above values. By setting the second electrode layer within this thickness range, it is beneficial to maximize the power density of the battery and also to optimize the overall size of the nuclear battery.

[0072] In some embodiments, the thicknesses of the first electrode layer and the second electrode layer may be the same or different.

[0073] It should be noted that the type of the first radioactive element, the doping concentration of the first radioactive element, the thickness of the intrinsic semiconductor layer, the first electrode layer, and the second electrode layer can be selected and set according to actual needs.

[0074] In this application, references Figure 1To further improve the utilization rate of radiated particle energy, the first electrode layer 111 and / or the second electrode layer 112 can be doped with a second radioactive element 118, so that the first electrode layer 111 and / or the second electrode layer 112 include the second radioactive element 118. In other words, the first electrode layer 111 and / or the second electrode layer 112 include the second radioactive element 118. The second radioactive element radiates the first electrode layer and / or the second electrode layer, making the first electrode layer and / or the second electrode layer radioactive, thus further improving the utilization rate of radiated particle energy. It should be noted that the second radioactive element can be doped only in the first electrode layer, only in the second electrode layer, or simultaneously in both the first and second electrode layers. Among these, when the doping concentration is constant, simultaneously doping the first electrode layer and the second electrode layer with the second radioactive element can better improve the utilization rate of radiated particle energy.

[0075] Here, the second radioactive element can be the same as or different from the first radioactive element. Furthermore, when both the first and second electrode layers are doped with the second radioactive element, the second radioactive element can be the same or different. By using the same or different first and second radioactive elements, the nuclear battery of this application can be diversified and suitable for different application scenarios.

[0076] For example, the second radioactive element is Americium-241 ( 241 Am), Plutonium-238 238 Pu), Promethium-147

[0077] ( 147 Pm), carbon-14 ( 14 C), Nickel-63 ( 63 Ni), tritium and yttrium-90 90 One or more of Y). These radioactive elements have relatively long half-lives or high safety, which enables the battery to operate stably for a long time or to have high safety.

[0078] In some embodiments, the concentration of the second radioactive element in the first electrode layer may be the same as or different from the concentration of the second radioactive element in the second electrode layer. By setting the same or different concentrations of radioactive elements in different electrode layers, the battery of this application can be adapted to a variety of needs and applications.

[0079] In some embodiments, the concentration d2 of the second radioactive element in the first electrode layer ranges from 0 to 30 at.%, such as 0.5 at.%, 1 at.%, 5 at.%, 10 at.%, 20 at.%, 25 at.%, 30 at.%, etc., or it can be a range composed of any two of the above values. By setting the concentration of the second radioactive element within this range, the first electrode layer can be effectively radiated, thereby simplifying the device structure and further improving the energy conversion efficiency of the battery.

[0080] In some embodiments, the concentration d3 of the second radioactive element in the second electrode layer ranges from 0 < d3 ≤ 30 at.%, for example, 0.5 at.%, 1 at.%, 5 at.%, 10 at.%, 20 at.%, 25 at.%, 30 at.%, etc., or it can be a range composed of any two of the above values. By setting the concentration of the second radioactive element within this range, the first electrode layer can be effectively radiated, thereby effectively simplifying the device structure and further improving the energy conversion efficiency of the battery.

[0081] It should be noted that, through calculation, when a first radioactive element is doped into an intrinsic semiconductor layer with a thickness of 100-1000 nm at the above concentration (e.g., 20 at.%), and a second radioactive element is doped into a first electrode layer and a second electrode layer with a thickness of 100-1000 nm at the above concentration (e.g., 20 at.%), the energy conversion efficiency of a nuclear battery with a single semiconductor structure can be improved by at least 15%.

[0082] In some embodiments, the nuclear battery includes at least two semiconductor structures stacked along a first direction. Here, "first direction" can be understood as the stacking direction of the first electrode layer, PIN cells, and second electrode layer (e.g., the Z-axis direction). "At least two" should be understood as two or more. By stacking at least two semiconductor structures, the energy density of the nuclear battery can be effectively increased.

[0083] In some implementations, two adjacent semiconductor structures share a single electrode layer. By using the electrode layer as the interconnect layer of the stacked battery, the device structure can be effectively simplified.

[0084] As previously described, each semiconductor structure includes a first electrode layer, a PIN unit, and a second electrode layer. When the cascading methods of multiple semiconductor structures are different, the stacking methods between the P-type semiconductor layer, N-type semiconductor layer, and intrinsic semiconductor layer in the PIN unit are different. In the embodiments of this disclosure, the cascading relationship between multiple semiconductor structures can be series, parallel, or partially series and partially parallel; in other words, the multiple PIN units in the multiple semiconductor structures can be arranged in series, in parallel, or some PIN units can be arranged in series and others in parallel.

[0085] When multiple PIN units are connected in series, the multiple layers of each PIN unit are arranged in a stacked manner of N-type semiconductor layer, intrinsic semiconductor layer (I layer), and P-type semiconductor layer (NIP), or in a stacked manner of P-type semiconductor layer, intrinsic semiconductor layer (I layer), and N-type semiconductor layer (PIN). This series arrangement effectively increases the overall operating voltage of the nuclear battery described in this application.

[0086] When multiple PIN cells are connected in parallel, the multiple layers of each PIN cell are arranged in an alternating manner of N-type semiconductor layer, intrinsic semiconductor layer (I layer), P-type semiconductor layer (NIP) and P-type semiconductor layer, intrinsic semiconductor layer (I layer), N-type semiconductor layer (PIN). This parallel arrangement can effectively improve the battery's capacity and power output.

[0087] It should be noted that the positions of the first electrode layer and the second electrode layer in each semiconductor structure can be interchanged.

[0088] In some embodiments, two adjacent semiconductor structures in the plurality of semiconductor structures 110 may share an electrode layer, which simplifies the nuclear battery structure and improves the energy density of the nuclear battery. It should be understood that, depending on the stacking method of the PIN cells, when two adjacent semiconductor structures are connected in series or in parallel, the electrodes shared between the two PIN cells are different; that is, they may share a first electrode layer or a second electrode layer.

[0089] In some embodiments, the N-type semiconductor layer includes an N-type ion-doped diamond layer (i.e., an N-type diamond layer); the N-type ion is, for example, a nitrogen (N) ion. The P-type semiconductor layer includes a P-type ion-doped diamond layer (i.e., a P-type diamond layer); the P-type ion is, for example, a boron (B) ion. The intrinsic semiconductor layer includes an intrinsic diamond layer containing a first radioactive element.

[0090] It should be noted that diamond has excellent thermal conductivity, which can quickly dissipate the heat of the nuclear battery, thus preventing a decrease in power output or even damage to the battery due to excessive temperature. In other words, diamond nuclear batteries can operate stably at higher voltages and currents. Furthermore, diamond's high carrier mobility and saturation velocity enable the nuclear battery to collect and transport charge carriers more efficiently, thereby improving the battery's conversion efficiency.

[0091] The following explanation, in conjunction with embodiments and accompanying drawings, describes the cases where two semiconductor structures are connected in series and two semiconductor structures are connected in parallel, with adjacent semiconductor structures sharing a single electrode layer.

[0092] In some embodiments, reference Figure 2 , Figure 2 This application illustrates a nuclear battery comprising two semiconductor structures connected in series. The nuclear battery 200 includes a first semiconductor structure 210 and a second semiconductor structure 220, which share a common electrode layer. The first semiconductor structure 210 includes a first electrode layer 201, a first N-type semiconductor layer 202, a first intrinsic semiconductor layer 203, a first P-type semiconductor layer 204, and a second electrode layer 205. The second semiconductor structure 220 includes a second electrode layer 205, a second N-type semiconductor layer 206, a second intrinsic semiconductor layer 207, a second P-type semiconductor layer 208, and a third electrode layer 209. Here, the second electrode layer 205 is a shared electrode layer between the first semiconductor structure 210 and the second semiconductor structure 220.

[0093] In other words, when the nuclear battery 200 includes two semiconductor structures connected in series, the multiple layers from bottom to top are: first electrode layer 201, first N-type semiconductor layer 202, first intrinsic semiconductor layer 203, first P-type semiconductor layer 204, second electrode layer 205, second N-type semiconductor layer 206, second intrinsic semiconductor layer 207, second P-type semiconductor layer 208, and third electrode layer 209.

[0094] It should be noted that the PIN units in the first semiconductor structure 210 and the second semiconductor structure 220 are arranged in the order of N-type semiconductor layer, intrinsic semiconductor layer (I layer), and P-type semiconductor layer (NIP). In some other embodiments, the PIN units in the first semiconductor structure 210 and the second semiconductor structure 220 may also be arranged in the order of P-type semiconductor layer, intrinsic semiconductor layer (I layer), and N-type semiconductor layer (PIN).

[0095] Here, both the first intrinsic semiconductor layer 203 and the second intrinsic semiconductor layer 207 may include the first radioactive element 211, or one of the intrinsic semiconductor layers may include the first radioactive element 211. By doping some or all of the intrinsic semiconductor layers with the first radioactive element, the doped intrinsic semiconductor layer can be radiated and become radioactive, thereby improving the utilization rate of radiation particle energy.

[0096] In some embodiments, the first electrode layer 201, the second electrode layer 205, and the third electrode layer 209 may all contain the second radioactive element 212, or some of the electrode layers may contain the second radioactive element 212. By doping some or all of the electrode layers with the second radioactive element, the doped electrode layers can be radiated to make them also radioactive. In this way, using the electrode layers containing the second radioactive element as interconnect layers between semiconductor structures can improve the utilization rate of radiation energy and further improve the conversion efficiency of the nuclear battery.

[0097] It should be noted that in multiple semiconductor structures arranged in series, each adjacent semiconductor structure shares an electrode layer, which simplifies the device structure of the nuclear battery and improves its energy density.

[0098] In other embodiments, reference is made to... Figure 3 The nuclear battery 300 also includes multiple semiconductor structures connected in series (such as 310, 320, 330, etc.). All PIN units in the multiple semiconductor structures are arranged in the same stacking manner; for example, they are all arranged in a stacking manner of N-type semiconductor layer, intrinsic semiconductor layer (I layer), and P-type semiconductor layer (NIP), or they are all arranged in a stacking manner of P-type semiconductor layer, intrinsic semiconductor layer (I layer), and N-type semiconductor layer (PIN). And adjacent semiconductor structures (or PIN units) share a common electrode layer. In this way, multiple semiconductor structures can be connected in series.

[0099] In some embodiments, reference Figure 4 , Figure 4This is a schematic diagram of a nuclear battery comprising two parallel semiconductor structures, as shown in an embodiment of the present disclosure. The nuclear battery 400 includes a third semiconductor structure 410 and a fourth semiconductor structure 420, which share a common electrode layer. The third semiconductor structure 410 includes a first electrode layer 401, a first N-type semiconductor layer 402, a first intrinsic semiconductor layer (I layer) 403, a first P-type semiconductor layer 404, and a second electrode layer 405. The fourth semiconductor structure 420 includes a second electrode layer 405, a second P-type semiconductor layer 406, a second intrinsic semiconductor layer (I layer) 407, a second N-type semiconductor layer 408, and a third electrode layer 409. The second electrode layer 405 is a shared electrode layer between the third semiconductor structure 410 and the fourth semiconductor structure 420.

[0100] In other words, when the nuclear battery 400 includes two semiconductor structures arranged in parallel, the multiple layers from bottom to top are: first electrode layer 401, first N-type semiconductor layer 402, first intrinsic semiconductor layer (I layer) 403, first P-type semiconductor layer 404, second electrode layer 405, second P-type semiconductor layer 406, second intrinsic semiconductor layer (I layer) 407, second N-type semiconductor layer 408, and third electrode layer 409.

[0101] Here, the first intrinsic semiconductor layer 403 and the second intrinsic semiconductor layer 407 may both include the first radioactive element 411, or one of the intrinsic semiconductor layers may include the first radioactive element 411. By doping the first radioactive element in some or all of the intrinsic semiconductor layers, the doped intrinsic semiconductor layer can be radiated and become radioactive, thereby improving the utilization rate of radiation particle energy.

[0102] In some embodiments, the first electrode layer 401, the second electrode layer 405, and the third electrode layer 409 may all contain the second radioactive element 412, or some of the electrode layers may contain the second radioactive element 412. By doping some or all of the electrode layers with the second radioactive element, the doped electrode layers can be radiated to make them also radioactive. In this way, using the electrode layers containing the second radioactive element as interconnect layers between semiconductor structures can improve the utilization rate of radiation energy and further improve the conversion efficiency of the nuclear battery.

[0103] It should be noted that in multiple semiconductor structures arranged in parallel, each adjacent semiconductor structure shares an electrode layer, which simplifies the device structure of the nuclear battery and improves its energy density.

[0104] It should be noted that the stacking arrangement of the layers in the PIN units of the third semiconductor structure 410 and the fourth semiconductor structure 420 is reversed. Specifically, when the PIN units of the third semiconductor structure 410 are arranged in the order of N-type semiconductor layer, intrinsic semiconductor layer (I layer), and P-type semiconductor layer (NIP), the PIN units of the fourth semiconductor structure 420 are arranged in the order of P-type semiconductor layer, intrinsic semiconductor layer (I layer), and N-type semiconductor layer (PIN). In some other embodiments, when the PIN units of the third semiconductor structure 410 can be arranged in the order of P-type semiconductor layer, intrinsic semiconductor layer (I layer), and N-type semiconductor layer (PIN), the PIN units of the fourth semiconductor structure 420 are arranged in the order of N-type semiconductor layer, intrinsic semiconductor layer (I layer), and P-type semiconductor layer (NIP).

[0105] In other embodiments, reference is made to... Figure 5 The nuclear battery 500 also includes more parallel semiconductor structures (such as 510, 520, 530, etc.). The stacking method of each layer of each two adjacent PIN units in the multiple semiconductor structures is opposite, so that each two adjacent semiconductor structures can be connected in parallel.

[0106] To better understand how a first radioactive element is doped into the intrinsic semiconductor layer in the embodiments of this disclosure, this application provides a method for preparing a PIN junction nuclear battery, wherein the PIN junction nuclear battery includes at least one semiconductor structure 110.

[0107] refer to Figure 6 , Figure 6 This is a schematic diagram of a process for forming a semiconductor structure 110 according to an embodiment of this disclosure. The method includes:

[0108] S601: Forming a P-type semiconductor layer / N-type semiconductor layer;

[0109] S602: An intrinsic semiconductor layer (I layer) containing a first radioactive element is formed on a P-type semiconductor layer / N-type semiconductor layer;

[0110] S603: An N-type semiconductor layer / P-type semiconductor layer is formed on the intrinsic semiconductor layer;

[0111] S604: A first electrode layer is formed on the side of the P-type semiconductor layer / N-type semiconductor layer away from the intrinsic semiconductor layer;

[0112] S605: A second electrode layer is formed on the side of the N-type semiconductor layer / P-type semiconductor layer away from the intrinsic semiconductor layer.

[0113] In some implementations, the above method includes:

[0114] S601, forming a P-type semiconductor layer;

[0115] S602, an intrinsic semiconductor layer (I layer) containing a first radioactive element is formed on a P-type semiconductor layer;

[0116] S603, an N-type semiconductor layer is formed on the intrinsic semiconductor layer;

[0117] S604, a first electrode layer is formed on the side of the P-type semiconductor layer away from the intrinsic semiconductor layer; and

[0118] S605, a second electrode layer is formed on the side of the N-type semiconductor layer away from the intrinsic semiconductor layer.

[0119] In some implementations, the above method includes:

[0120] S601, forming an N-type semiconductor layer;

[0121] S602, an intrinsic semiconductor layer (I layer) containing a first radioactive element is formed on an N-type semiconductor layer;

[0122] S603, a P-type semiconductor layer is formed on the intrinsic semiconductor layer;

[0123] S604, a first electrode layer is formed on the side of the N-type semiconductor layer away from the intrinsic semiconductor layer; and

[0124] S605, a second electrode layer is formed on the side of the P-type semiconductor layer away from the intrinsic semiconductor layer.

[0125] The above method can effectively prepare the PIN junction nuclear battery of the first aspect of this application.

[0126] In some implementations, the intrinsic semiconductor layer is formed by depositing a precursor containing a first radioactive element. This deposition process is simple to operate, highly practical, and suitable for large-scale production.

[0127] In some embodiments, microwave plasma chemical vapor deposition is used to form the intrinsic semiconductor layer from a precursor containing a first radioactive element. Intrinsic semiconductor layers can be effectively formed via microwave plasma chemical vapor deposition.

[0128] In some implementations, the deposition is performed until an intrinsic semiconductor layer with a thickness of 20 nm to 350 nm is obtained.

[0129] In some embodiments, the concentration d1 of the first radioactive element in the first electrode layer is set to 0 < d1 ≤ 30 at.% by controlling the flow rate of the precursor containing the first radioactive element. By setting this concentration of the first radioactive element, the energy conversion efficiency of the nuclear battery can be effectively improved.

[0130] In some embodiments, the first electrode layer and / or the second electrode layer are doped with a second radioactive element so that the second electrode layer and / or the second electrode layer contains the second radioactive element. By doping the first electrode layer and / or the second electrode layer with a second radioactive element, the first electrode layer and / or the second electrode layer can be effectively radiated, simplifying the device structure.

[0131] In some embodiments, a first electrode layer and a second electrode layer, both with a thickness of 100 nm to 1000 nm, are formed by vapor deposition. The vapor deposition process is simple to operate, highly practical, and suitable for mass production.

[0132] In some embodiments, the concentration d2 of the second radioactive element in the first electrode layer is controlled to be in the range of 0 < d2 ≤ 30 at.% by controlling the evaporation rate of the raw material; and / or, the concentration d3 of the second radioactive element in the second electrode layer is in the range of 0 < d3 ≤ 30 at.%. By forming the first and second electrode layers within this thickness, it is beneficial to maximize the power density of the battery and also to optimize the overall size of the nuclear battery.

[0133] In one specific embodiment, exemplarily, the N-type semiconductor layer is an N-type diamond layer; the P-type semiconductor layer is a P-type diamond layer; and the intrinsic semiconductor layer is an intrinsic diamond layer. The fabrication method is as follows:

[0134] The process of S601, forming an N-type diamond layer, includes: providing a substrate, cleaning and pre-treating the substrate to ensure a clean and flat surface; using vapor deposition technology (such as chemical vapor deposition (CVD)), placing the substrate in a reaction chamber for CVD, and introducing carbon-containing gases (such as methane CH4, acetylene C2H2, etc.) and reducing gases (such as hydrogen H2) into the reaction chamber, decomposing and reducing them at high temperature to produce carbon atoms, thus forming diamond nuclei on the substrate surface; further, carbon atoms are deposited on the nuclei to continuously grow the diamond film, during which the diamond film is doped with N-type ions (such as nitrogen ions) to form an N-type diamond layer.

[0135] The N-type diamond layer is polished and etched to improve its surface quality and performance. Here, the thickness of the N-type diamond layer ranges from 500 nm to 1500 nm. For example, the thickness of the N-type diamond layer is 1000 nm.

[0136] It should be noted that the key to diamond layer deposition technology is controlling deposition conditions, such as gas flow rate, gas pressure, and temperature, to obtain high-quality diamond layers. Diamond layer deposition technologies are relatively mature and will not be elaborated upon here.

[0137] Perform S602, using microwave plasma chemical vapor deposition (MPCVD) technology to form a layer containing [a specific component] on the surface of an N-type diamond layer. 14 The intrinsic diamond layer of C. The specific method includes: placing the N-type diamond layer inside a cylindrical resonant cavity; using a microwave frequency of 2.45 GHz; and introducing a reactive gas into the cavity. Here, the gas source is CH4. 14 CH4, H2, inert gases (such as argon (Ar)), oxygen (O2), and nitrogen (N2); among which, H2 is used to reduce CH4 and 14 CH4, to form an intrinsic diamond layer, and 14 Carbon is doped into the intrinsic diamond layer. Ar and N2 are used as protective gases. Oxygen acts as a catalyst. Thus, a diamond containing... 14 The intrinsic diamond layer (I layer) of C. It should be understood that, 14 C is radioactive, therefore, containing 14 The intrinsic diamond layer of C is also radioactive. Here, containing 14 The thickness of the intrinsic diamond layer of C ranges from 20 nm to 350 nm. 14 The doping concentration d1 of C ranges from 0 to 30 at.%, for example. 14 The C doping concentration d1 is 20 at.%. Here, in the intrinsic diamond layer... 14 The doping concentration of C can be determined by... 14 C is determined by its proportion in the intrinsic diamond layer, i.e. 14 C contains 14 The intrinsic diamond layer of C contains less than 30% carbon atoms. For example, 14 C atoms make up 20% of the total.

[0138] It should be noted that MPCVD technology is used to achieve doping in intrinsic diamond layers. 14 During the C process, it is possible to control 14 CH4 flow rate control 14 The doping concentration of C; where, 14 The higher the flow rate of CH4, the more the intrinsic diamond layer... 14 The higher the C doping concentration, the better.

[0139] Perform S603, using vapor deposition techniques (such as CVD), in a process containing...14 A P-type diamond layer is formed on the surface of the intrinsic diamond layer of C to form a PIN unit. Specific methods include: forming a P-type diamond layer on the surface of the already formed N-type diamond layer and... 14 The intrinsic diamond layered structure of C is placed in a reaction chamber used for vapor deposition, containing... 14 One side of the intrinsic diamond layer of C is exposed; carbon-containing gas (such as methane CH4, acetylene C2H2, etc.) and reducing gas (such as hydrogen H2) are introduced into the reaction chamber, and decomposed and reduced at high temperature to produce carbon atoms, so as to form a reaction chamber containing carbon atoms. 14 The exposed surface of the intrinsic diamond layer of C forms a diamond nucleus. Further, carbon atoms are deposited on this nucleus, causing the diamond film to grow continuously. During the growth process, the diamond film is doped with P-type ions (such as boron ions) to form a P-type diamond layer.

[0140] The surface of the P-type diamond layer is polished and etched to improve its surface quality and performance. Here, the thickness of the P-type diamond layer ranges from 25 nm to 100 nm. For example, the thickness of the P-type diamond layer is 80 nm. This allows the formation of PIN cells.

[0141] A first electrode layer is formed on one side of the PIN cell; a second electrode layer is formed on one side of the PIN cell; it should be understood that the order of forming the first electrode layer and the second electrode layer can be interchanged, that is, the order of forming S604 and S605 can be interchanged.

[0142] In step S604, a first electrode layer is formed on the surface of the N-type diamond layer in the PIN cell, away from the intrinsic semiconductor layer. The material of the first electrode layer is a conductive material, such as silver (Ag) or copper (Cu). The methods for forming the first electrode layer include, but are not limited to, chemical vapor deposition, vacuum evaporation, and other techniques. The thickness of the first electrode layer ranges from 100 nm to 1000 nm.

[0143] In some embodiments, the first electrode layer is doped with a second radioactive element to contain the second radioactive element. In some specific embodiments: the PIN cell is placed in a vacuum coating machine at 5×10⁻⁶ ℃. -4 Co-deposited on the surface of N-type diamond layer under vacuum conditions of Pa 63 NiClx (e.g., X=2) and Ag, 63 The NiClx to Ag evaporation rate ratio is 0.1:1, resulting in a product containing... 63 The first electrode layer of Ni (Ag electrode layer); for example, containing 63 The thickness of the first electrode layer (Ag electrode layer) of Ni is 80 nm. 63 Ni doping concentration, i.e. 63The atomic percentage of Ni in both the first and second electrode layers is less than 30%. For example, 63 Ni has an atomic percentage of 20%.

[0144] It should be noted that, in the above embodiments, 63 The NiClx to Ag evaporation rate ratio is 0.1:1. Under this ratio, the resulting... 63 Ni-doped N-type diamond layer 63 The Ni doping concentration is approximately 20 at.%. In other embodiments, vapor deposition can be performed at other ratios to obtain other doping concentrations. 63 Ni N-type diamond layer.

[0145] It should be noted that in the co-evaporation process, the temperature can be controlled by a separate temperature control device. 63 The evaporation rates of NiClx and Ag, when a larger evaporation rate is required... 63 When the Ni doping concentration is increased, it can be achieved by increasing the concentration of Ni doping. 63 The evaporation temperature of NiClx is increased. 63 This is achieved by the amount of Ni deposited.

[0146] In step S605, a second electrode layer is formed on the surface of the P-type diamond layer in the PIN cell, on the side furthest from the intrinsic semiconductor layer. The material of the second electrode layer can be the same as or different from that of the first electrode layer; here, the material of the second electrode layer is a conductive material, such as Ag or Cu. Methods for forming the second electrode layer include, but are not limited to, chemical vapor deposition and vacuum evaporation. The thickness of the second electrode layer ranges from 100 nm to 1000 nm.

[0147] Similarly, to further improve the utilization rate of radiated particles, the second electrode layer is doped with a second radioactive element, so that the second electrode layer contains the second radioactive element. Since the second element is radioactive, the second electrode layer is also radioactive. Here, the second radioactive element may be the same as or different from the first radioactive element; for ease of understanding, the second radioactive element is used here. 63 Taking Ni as an example. The specific method includes: placing the PIN unit into a vacuum coating machine, at 5×10... -4 Co-deposited on the surface of a P-type diamond layer under vacuum conditions of Pa. 63 NiClx and Ag, 63 The NiClx to Ag evaporation rate ratio is 0.1:1, resulting in a product containing... 63 The second electrode layer of Ni; exemplarily, containing 63 The thickness of the second electrode layer (Ag electrode layer) of Ni is 80 nm.

[0148] In this way, a complete semiconductor structure 110 can be formed.

[0149] As previously described, a nuclear battery may include one or more semiconductor structures 110. To improve the energy and density of the nuclear battery, the nuclear battery provided in this embodiment may include multiple semiconductor structures 110. The multiple semiconductor structures 110 are stacked along a first direction, which can be understood as the stacking direction of the first electrode layer, PIN cells, and the second electrode layer. The multiple PIN cells in the multiple semiconductor structures may be connected in series, in parallel, or some PIN cells may be connected in series while others are connected in parallel. Each pair of adjacent semiconductor structures 110 shares one electrode layer.

[0150] It should be noted that the multiple semiconductor structures in the nuclear battery are repeating units of semiconductor structure 110 in the aforementioned embodiments; forming multiple semiconductor structures can be understood as forming multiple repeating semiconductor structures 110; in other words, the preparation method of each layer in the multiple semiconductor structures is the same as the preparation method of each layer of semiconductor structure 110 described in the aforementioned embodiments, and will not be repeated here. Adjacent semiconductor structures in the multiple semiconductor structures may or may not share an electrode layer. However, it should be understood that sharing an electrode layer between two adjacent semiconductor structures can simplify the nuclear battery structure, increase structural density, and improve energy conversion efficiency. The stacking method of each layer in the multiple semiconductor structures can be set according to requirements (such as series, parallel, etc.), and is not limited here.

[0151] For example, return to reference Figure 2 , Figure 2 This is a schematic diagram of a nuclear battery 200 comprising two semiconductor structures arranged in series, as shown in an embodiment of the present disclosure; wherein, the multiple layers of the nuclear battery 200 are, from bottom to top, the following: first electrode layer 201, first N-type semiconductor layer 202, first intrinsic semiconductor layer (I layer) 203, first P-type semiconductor layer 204, second electrode layer 205, second N-type semiconductor layer 206, second intrinsic semiconductor layer (I layer) 207, second P-type semiconductor layer 208, and third electrode layer 209.

[0152] Based on this, the method for forming the nuclear battery 200 includes: sequentially forming a first N-type semiconductor layer 202, a first intrinsic semiconductor layer (I layer) 203, a first P-type semiconductor layer 204, a second electrode layer 205, a second N-type semiconductor layer 206, a second intrinsic semiconductor layer (I layer) 207, and a second P-type semiconductor layer 208 stacked together; forming a first electrode layer 201 on the surface of the first N-type semiconductor layer 202 away from the first intrinsic semiconductor layer 203; and forming a third electrode layer 209 on the surface of the second P-type semiconductor layer 208 away from the second intrinsic semiconductor layer 207. It should be understood that the order in which the first electrode layer 201 and the third electrode layer 209 are formed can be interchanged.

[0153] In other embodiments, reference is made to... Figure 3 The nuclear battery 300 also includes more semiconductor structures arranged in series (such as 310, 320, 330, etc.). In the process of forming the nuclear battery 300, the PIN units in each semiconductor structure are arranged in a stacking manner of N-type semiconductor layer, intrinsic semiconductor layer (I layer), and P-type semiconductor layer, or all of them are arranged in a stacking manner of P-type semiconductor layer, intrinsic semiconductor layer (I layer), and N-type semiconductor layer; and adjacent semiconductor structures (or PIN units) can share a single electrode layer.

[0154] For example, return to reference Figure 4 , Figure 4 This is a schematic diagram of a nuclear battery 400 comprising two semiconductor structures arranged in parallel, as shown in an embodiment of the present disclosure; wherein, the multiple layers of the nuclear battery 400 are, from bottom to top, the following: first electrode layer 401, first N-type semiconductor layer 402, first intrinsic semiconductor layer (I layer) 403, first P-type semiconductor layer 404, second electrode layer 405, second P-type semiconductor layer 406, second intrinsic semiconductor layer (I layer) 407, second N-type semiconductor layer 408, and third electrode layer 409.

[0155] Based on this, the method for forming the nuclear battery 400 includes: sequentially forming a first N-type semiconductor layer 402, a first intrinsic semiconductor layer (I layer) 403, a first P-type semiconductor layer 404, a second electrode layer 405, a second P-type semiconductor layer 406, a second intrinsic semiconductor layer (I layer) 407, and a second N-type semiconductor layer 408 stacked together; forming a first electrode layer 401 on the surface of the first N-type semiconductor layer 402 away from the first intrinsic semiconductor layer 403; and forming a third electrode layer 409 on the surface of the second N-type semiconductor layer 408 away from the second intrinsic semiconductor layer 407. It should be understood that the order in which the first electrode layer 401 and the third electrode layer 409 are formed can be interchanged.

[0156] In other embodiments, reference is made to... Figure 5The nuclear battery 500 also includes more parallel semiconductor structures (such as 510, 520, 530, etc.). In the process of forming the nuclear battery 500, the stacking method of each layer in each two adjacent PIN units is reversed; and the semiconductor structures (or PIN units) between two adjacent units can share a single electrode layer.

[0157] In this embodiment of the disclosure, during the formation of the intrinsic semiconductor layer, the intrinsic semiconductor layer is doped with a first radioactive element so that the intrinsic semiconductor layer contains the first radioactive element. In this way, on the one hand, after integrating the intrinsic semiconductor layer with the first radioactive element, the first radioactive element can be prevented from being externally placed, and the radiation angle of the first radioactive element when releasing particles can be increased, thereby improving the energy utilization rate of the radiated particles. On the other hand, the intrinsic semiconductor layer is radiated by the first radioactive element so that the intrinsic semiconductor layer has radioactivity, thereby improving the energy utilization rate of the radiated particles, and thus improving the energy conversion efficiency of the nuclear battery.

[0158] This application also provides an electrical device, including the PIN junction core battery provided in the above embodiments.

[0159] In some implementations, the electrical appliance may also include lighting equipment, energy storage equipment, etc., but is not limited thereto.

[0160] This application also provides a power generation device, including a PIN junction nuclear battery as described in the above embodiments of this disclosure.

[0161] It should be understood that the phrase "an embodiment" or "one embodiment" throughout the specification means that a specific feature, structure, or characteristic related to the embodiment is included in at least one embodiment of this disclosure. Therefore, "in one embodiment" or "one embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this disclosure, the sequence numbers of the above-described processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this disclosure. The sequence numbers of the above-described embodiments are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0162] The above description is merely a preferred embodiment of this disclosure and does not limit the patent scope of this disclosure. Any equivalent structural transformations made using the contents of this specification and drawings under the inventive concept of this disclosure, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this disclosure.

Claims

1. A PIN junction type nuclear battery, characterized in that, include: At least one semiconductor structure; The semiconductor structure includes: a first electrode layer, a second electrode layer, and a PIN unit located between the first electrode layer and the second electrode layer; the PIN unit includes: a P-type semiconductor layer, an N-type semiconductor layer, and an intrinsic semiconductor layer located between the P-type semiconductor layer and the N-type semiconductor layer; The intrinsic semiconductor layer includes a first radioactive element.

2. The nuclear battery according to claim 1, characterized in that, The first radioactive element includes one or more of the following radioactive sources: Alpha-type radiation source; beta-type radiation source; X-ray radiation source; gamma-ray radiation source.

3. The nuclear battery according to claim 1 or 2, characterized in that, The PIN junction nuclear battery satisfies one or more of the following conditions: (1) The first radioactive element includes one or more of the following: americium-241, plutonium-238, promethium-147, carbon-14, nickel-63, tritium, and yttrium-90; (2) The concentration d1 of the first radioactive element is: 0 < d1 ≤ 30 at.%; (3) The thickness of the intrinsic semiconductor layer is 20 nm to 350 nm; (4) The thickness of the first electrode layer is 100 nm to 1000 nm; (5) The thickness of the second electrode layer is 100 nm to 1000 nm.

4. The nuclear battery according to any one of claims 1 to 3, characterized in that, The first electrode layer and / or the second electrode layer include a second radioactive element.

5. The nuclear battery according to claim 4, characterized in that, The second radioactive element may be the same as or different from the first radioactive element.

6. The nuclear battery according to claim 4 or 5, characterized in that, The PIN junction nuclear battery satisfies one or more of the following conditions: (1) The second radioactive element includes one or more of the following: americium-241, plutonium-238, promethium-147, carbon-14, nickel-63, tritium, and yttrium-90; (2) The concentration of the second radioactive element in the first electrode layer is the same as or different from the concentration of the second radioactive element in the second electrode layer; (3) The concentration d2 of the second radioactive element in the first electrode layer is: 0 < d2 ≤ 30 at.%; and / or, the concentration d3 of the second radioactive element in the second electrode layer is: 0 < d3 ≤ 30 at.%.

7. The nuclear battery according to any one of claims 1 to 6, characterized in that, The nuclear battery includes at least two semiconductor structures stacked along a first direction; the first direction is the stacking direction of the first electrode layer, the second electrode layer, and the PIN unit.

8. The nuclear battery according to claim 7, characterized in that, Two adjacent semiconductor structures share a single electrode layer.

9. The nuclear battery according to claim 7 or 8, characterized in that, The at least two semiconductor structures are arranged in series or in parallel.

10. The nuclear battery according to claim 9, characterized in that, In the case where the nuclear battery comprises two semiconductor structures connected in series, it has the following layers arranged sequentially: First electrode layer, first N-type semiconductor layer, first intrinsic semiconductor layer, first P-type semiconductor layer, second electrode layer, second N-type semiconductor layer, second intrinsic semiconductor layer, second P-type semiconductor layer, third electrode layer.

11. The nuclear battery according to claim 9, characterized in that, In the case where the nuclear battery comprises two semiconductor structures arranged in parallel, it has the following layers arranged sequentially: First electrode layer, first N-type semiconductor layer, first intrinsic semiconductor layer, first P-type semiconductor layer, second electrode layer, second P-type semiconductor layer, second intrinsic semiconductor layer, second N-type semiconductor layer, third electrode layer.

12. The nuclear battery according to any one of claims 1 to 11, characterized in that, The N-type semiconductor layer includes an N-type diamond layer; the P-type semiconductor layer includes a P-type diamond layer; and the intrinsic semiconductor layer includes an intrinsic diamond layer containing the first radioactive element.

13. A method for preparing a PIN junction nuclear battery, characterized in that, The nuclear battery includes at least one semiconductor structure; the method for preparing the semiconductor structure includes: Forming P-type semiconductor layers / N-type semiconductor layers; An intrinsic semiconductor layer containing a first radioactive element is formed on the P-type semiconductor layer / N-type semiconductor layer; An N-type semiconductor layer / P-type semiconductor layer is formed on the intrinsic semiconductor layer; A first electrode layer is formed on the side of the P-type semiconductor layer / N-type semiconductor layer away from the intrinsic semiconductor layer; A second electrode layer is formed on the side of the N-type semiconductor layer / P-type semiconductor layer away from the intrinsic semiconductor layer.

14. The preparation method according to claim 13, characterized in that, The formation of the intrinsic semiconductor layer includes: The intrinsic semiconductor layer is formed by depositing a precursor containing a first radioactive element.

15. The preparation method according to claim 14, characterized in that, The method satisfies one or more of the following conditions: (1) The deposition was performed using microwave plasma chemical vapor deposition; (2) The first radioactive element includes one or more of the following: americium-241, plutonium-238, promethium-147, carbon-14, nickel-63, tritium, and yttrium-90; (3) Perform the deposition until an intrinsic semiconductor layer with a thickness of 20 nm to 350 nm is obtained; (4) The concentration d1 of the first radioactive element in the first electrode layer is 0 < d1 ≤ 30 at.% by controlling the flow rate of the precursor containing the first radioactive element.

16. The preparation method according to any one of claims 13 to 15, characterized in that, The method further includes: The first electrode layer and / or the second electrode layer are doped with a second radioactive element so that the second electrode layer and / or the second electrode layer contains the second radioactive element.

17. The preparation method according to claim 16, characterized in that, The method satisfies one or more of the following conditions: (1) The second radioactive element includes one or more of the following: americium-241, plutonium-238, promethium-147, carbon-14, nickel-63, tritium, and yttrium-90; (2) The first electrode layer and the second electrode layer, each with a thickness of 100 nm to 1000 nm, are formed by vapor deposition; (3) By controlling the evaporation rate of the raw material source, the concentration d2 of the second radioactive element in the first electrode layer is in the range of 0 < d2 ≤ 30 at.%; and / or, the concentration d3 of the second radioactive element in the second electrode layer is in the range of 0 < d3 ≤ 30 at.%.

18. An electrical appliance, characterized in that, The PIN junction nuclear battery includes any one of claims 1 to 12 or a PIN junction nuclear battery prepared by any one of claims 13 to 16, wherein the PIN junction nuclear battery is used to provide electrical energy.

19. A power generation device, characterized in that, This includes PIN junction nuclear batteries as described in any one of claims 1 to 12 or PIN junction nuclear batteries prepared by the preparation method as described in any one of claims 13 to 16.

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