Core particle interconnection integrated ultrafast laser pulse transmitting module and transmitting method based on silicon capacitor and germanium-silicon switch
By integrating silicon capacitors, germanium-silicon switches, and laser devices into the same SIP module, the problem of effective switching in existing laser emission systems at the 10 picosecond level is solved, achieving high-efficiency, low-power laser pulse emission, which is suitable for high-speed optical communication, biomedicine, and lidar.
Patent Information
- Application Number
- CN202511719039.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-21
- Publication Date
- 2026-02-10
AI Technical Summary
Existing laser emission systems struggle to achieve effective switching at the 10 picosecond level, and the parasitic inductance and capacitance of traditional MOS or CMOS structures limit pulse response speed and current output capability, resulting in complex systems that are unsuitable for miniaturization.
By integrating silicon capacitors, germanium-silicon switches, high-speed drive circuits, and laser devices into the same SIP module through a Die-to-Die interconnect structure, using SiGe HBT or SiGe BiCMOS transistors as high-speed switches, and combining MOS capacitors and deep trench silicon capacitors manufactured using germanium-silicon technology, high-density energy storage and high-speed discharge are achieved, parasitic parameters are reduced, and current output capability is improved.
It achieves efficient driving and miniaturization of 10 picosecond laser pulses, improves packaging density, and is suitable for high-speed optical communication, biomedicine and lidar and other fields.
Smart Images
Figure CN121507544A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of ultrafast lasers and high-speed electronic integration technology, specifically to an integrated ultrafast laser pulse emission module and emission method based on silicon capacitors and germanium-silicon switches with interconnected cores. Background Technology
[0002] To achieve picosecond-level pulse output, existing laser emission systems often rely on external high-speed pulse power supplies and discrete drive circuits, resulting in system complexity and making them unsuitable for miniaturization requirements. Furthermore, under high output current, traditional MOS or CMOS structures struggle to achieve effective switching at the 10 picosecond level. Additionally, parasitic inductance and capacitance caused by wiring also limit pulse response speed and current output capability.
[0003] With the increasing demand for miniaturized, low-power, high-current, and high-repetition-rate pulsed lasers in applications such as high-speed optical interconnects, biosensing, and lidar, there is an urgent need for a compact system that can highly integrate energy storage, driving, and laser devices and has a high-speed response.
[0004] Therefore, it does not meet the existing requirements. In response, we propose an integrated ultrafast laser pulse emission module and emission method based on silicon capacitors and germanium-silicon switches with chip interconnect. Summary of the Invention
[0005] The purpose of this invention is to provide an integrated ultrafast laser pulse emission module and emission method based on silicon capacitors and germanium-silicon switches. By organically integrating silicon capacitor energy storage, high-speed switching, high-speed driving and high-speed logic circuit interfaces and laser devices into the same SIP module through a die-to-die interconnect structure, the high-speed current driving capability and packaging density of the laser diode are significantly improved. This provides a new path for the miniaturization, integration and high performance of 10 picosecond laser devices and solves the problems mentioned in the background art.
[0006] To achieve the above objectives, the present invention provides the following technical solution:
[0007] The integrated ultrafast laser pulse emission module based on silicon capacitors and germanium-silicon switches includes: a first chip IC-Die, a second chip Laser-Die, an inter-chip interconnection structure, and a system-in-package structure. The first chip IC-Die integrates silicon capacitors, high-speed switches, high-speed drive circuits, and high-speed logic circuit interfaces.
[0008] The second core, Laser-Die, is a laser diode configured to output laser pulses with a pulse width of ten picoseconds under the drive of the pulse current generated by the discharge of a silicon capacitor.
[0009] The inter-chiplet interconnection structure is configured to electrically connect the first chiplet IC-Die and the second chiplet Laser-Die at an extremely short distance and with extremely low parasitic parameters, to realize heat conduction and structural support.
[0010] The system-in-package structure is configured to integrally encapsulate the first chiplet IC-Die and the second chiplet Laser-Die and the inter-chiplet interconnection structure, to form an integrated laser emission module.
[0011] Further, the silicon capacitor is manufactured by using a germanium-silicon process, and is a MOS capacitor or a deep trench silicon capacitor based on a silicon substrate, and is configured to be powered by an external power supply, and to be charged and store energy under the control of the external power supply.
[0012] Further, the high-speed switch is a transistor of a SiGe HBT or SiGe BiCMOS structure, and is configured to turn on the discharge path of the silicon capacitor after receiving a control signal.
[0013] Further, the high-speed drive circuit is configured to drive the high-speed switch to turn on and off quickly.
[0014] The high-speed logic circuit interface is configured to receive and process a discharge control signal from the outside, and to transmit the processing result to the high-speed drive circuit.
[0015] Further, the inter-chiplet interconnection structure includes: a first chiplet parallel layer placement structure, a second chiplet parallel layer placement structure, a first chiplet vertical placement structure, and a second chiplet vertical placement structure.
[0016] The chiplet interconnection integrated ultrafast laser pulse emission method based on the silicon capacitor and the germanium-silicon switch includes the following steps:
[0017] S1, integrating a silicon capacitor, a high-speed switch, a high-speed drive circuit, and a high-speed logic circuit interface in the first chiplet IC-Die; wherein the high-speed switch is manufactured by using a germanium-silicon process, and is used to control the discharge path of the silicon capacitor, the high-speed drive is used to control the high-speed switch, and the high-speed logic circuit interface is used to process a discharge control signal;
[0018] S2, forming a laser diode structure in the second chiplet Laser-Die;
[0019] S3, electrically connecting the first chiplet IC-Die and the second chiplet Laser-Die, and using the first chiplet parallel layer placement structure, the second chiplet parallel layer placement structure, the first chiplet vertical placement structure, and the second chiplet vertical placement structure for interconnection.
[0020] S4, the first IC-Die and the second Laser-Die are integrated and packaged in the same system-in-package (SiP);
[0021] S5, the external circuit sends a control signal through the logic circuit interface, the driving circuit drives the on-off of the high-speed switch in response to the control signal, releases the pulse current by the silicon capacitor, and drives the laser diode to emit a laser pulse with a pulse width of 10 picoseconds.
[0022] Further, the interconnection mode of the first IC-Die parallel layer placement structure, the second IC-Die parallel layer placement structure, the first IC-Die vertical placement structure and the second IC-Die vertical placement structure in S3 is as follows:
[0023] The first IC-Die parallel layer placement structure comprises: horizontally stacking the laser diode chip above the first IC-Die, welding adjacent surfaces, connecting one pole of the laser diode to the first IC-Die, and connecting the other pole of the laser diode to the first IC-Die through gold wire;
[0024] The second IC-Die parallel layer placement structure comprises: horizontally stacking the laser diode chip above the first IC-Die, welding adjacent surfaces, connecting one pole of the laser diode to the first IC-Die, and connecting the other pole of the laser diode to the first IC-Die through gold foil;
[0025] The first IC-Die vertical placement structure comprises: vertically stacking the laser diode chip above the first IC-Die, and connecting the two poles of the laser diode to the first IC-Die through welding on both sides;
[0026] The second IC-Die vertical placement structure comprises: vertically stacking the laser diode chip above the first IC-Die, connecting the two poles of the laser diode to the first IC-Die through two additional metal rods on both sides, and forming a heat conduction and support structure.
[0027] Compared with the prior art, the present application has the following advantages:
[0028] In the present application, by integrating silicon capacitor energy storage, high-speed switch, high-speed drive and high-speed logic circuit interface and laser devices in the same SIP module through Die-To-Die interconnection structure, short pulse width, high current output laser pulse emission can be realized in the system-in-package, with the characteristics of fast response speed, low power consumption, high integration, etc., which significantly improves the high-speed current driving capability and packaging density of laser diodes, provides a new implementation path for the miniaturization, integration and high performance of ten picosecond laser devices, and is widely used in high-speed optical communication, biological medicine, laser ranging, biological imaging and other technical fields. BRIEF DESCRIPTION OF DRAWINGS
[0029] Figure 1 The principle diagram of the core particle interconnection integrated ultrafast laser pulse emission module based on silicon capacitor and germanium-silicon switch provided by the present application is shown in the figure.
[0030] Figure 2 The first two core particles horizontally stacked and connected by gold wire are shown in the figure.
[0031] Figure 3 The second two core particles horizontally stacked and connected by gold foil are shown in the figure.
[0032] Figure 4 The third two core particles vertically stacked and connected by direct welding are shown in the figure.
[0033] Figure 5 The fourth two core particles vertically stacked and connected by additional metal rod are shown in the figure.
[0034] Figure 6 The flowchart of the core particle interconnection integrated ultrafast laser pulse emission method based on silicon capacitor and germanium-silicon switch provided by the present application is shown in the figure. DETAILED DESCRIPTION
[0035] The technical solutions in the embodiments of the present application will be described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.
[0036] In order to solve the technical problems that the traditional MOS or CMOS structure is difficult to realize effective switching in 10 picoseconds, and the parasitic inductance and parasitic capacitance caused by the wire also limit the pulse response speed and current output capability, please refer to Figure 1 Figure 6 The present application provides the following technical solutions:
[0037] The core particle interconnection integrated ultrafast laser pulse emission module based on silicon capacitor and germanium-silicon switch includes five parts: a first core particle IC-Die, a second core particle Laser-Die, a core particle interconnection structure and a system-level packaging structure. The first core particle IC-Die is internally integrated with a silicon capacitor, a high-speed switch, a high-speed drive circuit and a high-speed logic circuit interface, thereby greatly reducing parasitic parameters such as wiring inductance and resistance, and being conducive to high-speed response. The silicon capacitor is manufactured by using a germanium-silicon process, is a MOS capacitor or a deep trench silicon capacitor made of a silicon substrate, and is constructed by using a high dielectric constant medium to form a high unit area capacitance density structure, and can complete charging and discharging operations in a very short time; the capacitor is powered by an external power supply, and after being charged, is in a standby state, and can release stored energy instantaneously under the action of a control signal to generate a short-time high-current pulse for driving a laser.
[0038] The high-speed switch is a transistor in a SiGe HBT or SiGe BiCMOS structure, can complete the conduction and turn-off process in picoseconds, ensures that the laser pulse can reach the order of 10 picoseconds, and is suitable for high-speed current control requirements; the control end thereof is connected with an external control logic circuit, the discharge path of the silicon capacitor is turned on after the high-speed switch receives a control signal; the output end thereof is directly connected with the laser diode core particle to inject the current released by the capacitor into the laser in the shortest path; the high-speed drive circuit is configured to drive the high-speed switch made of a germanium-silicon process to be turned on with a very short rise time after receiving a trigger signal from the logic circuit interface, so that the pulse current of the energy storage silicon capacitor is released; the high-speed logic circuit interface is configured to receive and process a discharge control signal from the outside, and receive a picosecond-level pulse width control signal according to a preset logic protocol, such as LVDS, CML or ECL, so as to transmit the processing result to the high-speed drive circuit, ensure that the pulse laser output has a picosecond-level precision, and realize high-precision timing control of the 10 picosecond-level laser pulse emission process; based on this, the performance of high-speed driving is significantly improved, the control link delay is shortened, and the regulation and control ability of the current output pulse width is improved; secondly, by realizing the integrated design of “energy storage - drive control - current output” in the same core particle, the current transmission path is further compressed, the parasitic inductance is effectively reduced, and stable circuit support is provided for laser output with a pulse width of 10 picoseconds or even shorter.
[0039] The second core particle Laser-Die is a laser diode configured to output a laser pulse with a pulse width of 10 picoseconds under the driving of the pulse current generated by the discharge of the silicon capacitor; the laser diode core particle has high response speed and stable center wavelength output capability, and can emit a laser pulse with a typical pulse width of 10 picoseconds after receiving the transient high current output from the high-speed switch.
[0040] The die-to-die interconnection structure is configured to electrically connect the first die IC-Die and the second die Laser-Die at a very short distance and with very low parasitic parameters, realize heat conduction and structural support, effectively reduce parasitic inductance and parasitic resistance in the transmission path, and significantly improve the high-speed response capability and current transmission efficiency of the system.
[0041] The system-in-package structure is configured to integrally package the first die IC-Die and the second die Laser-Die and the die-to-die interconnection structure, and form an integrated laser emission module with a small size and high integration. The laser emission module has high-speed interconnection, a heat dissipation path, and a shielding layer, and is used to ensure the electrical integrity and thermal stability of the laser driving path. The system-in-package structure can be based on a ceramic or organic substrate, and has multiple internal structures such as a heat dissipation layer, a metal lead, and a packaging filler to enhance the thermal performance and EMI shielding capability. The external port adopts a SIP packaging form, which is convenient for high-speed interconnection with a master control circuit board.
[0042] The die-to-die interconnection integrated ultrafast laser pulse emission method based on a silicon capacitor and a germanium-silicon switch includes the following steps:
[0043] S1. Integrating a silicon capacitor, a high-speed switch, a high-speed driving circuit, and a high-speed logic circuit interface in the first die IC-Die. The high-speed switch is manufactured by a germanium-silicon process and is used to control the discharge path of the silicon capacitor. The high-speed driving circuit is used to control the high-speed switch, and the high-speed logic circuit interface is used to process a discharge control signal.
[0044] S2. Forming a laser diode structure in the second die Laser-Die.
[0045] S3. Electrically connecting the first die IC-Die and the second die Laser-Die by using a first die parallel layer placement structure, a second die parallel layer placement structure, a first die vertical placement structure, and a second die vertical placement structure.
[0046] S4. Integrally packaging the first die IC-Die and the second die Laser-Die in the same system-in-package SiP.
[0047] S5. An external circuit sends a control signal through a logic circuit interface, a driving circuit responds to the control signal to drive the on-off of a high-speed switch, a silicon capacitor releases a pulse current, and a laser diode emits a laser pulse with a pulse width of 10 picoseconds.
[0048] In S3, the first die parallel layer placement structure, the second die parallel layer placement structure, the first die vertical placement structure, and the second die vertical placement structure are used for interconnection, and specifically:
[0049] As Figure 2 : the first IC-Die parallel placement structure, comprising: placing the laser diode chip 2 horizontally above the first IC-Die 1, welding the adjacent surfaces, connecting one pole of the laser diode 2 to the first IC-Die 1, and connecting the other pole of the laser diode 2 to the first IC-Die 1 through the gold wire 3.
[0050] As Figure 3 : the second IC-Die parallel placement structure, comprising: placing the laser diode chip 2 horizontally above the first IC-Die 1, welding the adjacent surfaces, connecting one pole of the laser diode 2 to the first IC-Die 1, and connecting the other pole of the laser diode 2 to the first IC-Die 1 through the gold foil 3.
[0051] As Figure 4 : the first IC-Die vertical placement structure, comprising: placing the laser diode chip 2 vertically above the first IC-Die 1, welding the two sides to form two welds 3, thereby connecting the two poles of the laser diode 2 to the first IC-Die 1.
[0052] As Figure 5 : the second IC-Die vertical placement structure, comprising: placing the laser diode chip 2 vertically above the first IC-Die 1, connecting the two poles of the laser diode 2 and the first IC-Die 1 through the additional metal rod 3 on both sides, thereby connecting the two poles of the laser diode 2 to the first IC-Die 1 and forming a heat-conducting and supporting structure.
[0053] The beneficial effects achieved by the above content: through silicon capacitor charging energy storage, and using high-speed switching devices made of silicon-germanium (SiGe) process to control the discharge path, and through the high-speed logic circuit interface to receive external control signals, the high-speed driving circuit drives the high-speed switch, thereby driving the laser diode to generate short pulse laser of the order of ten picoseconds. The high-speed switch, silicon capacitor, high-speed drive and high-speed logic circuit interface are integrated into a semiconductor chip (IC-Die), and the laser diode is another chip (Laser-Die). The two chips are horizontally stacked or vertically stacked, and then connected and integrated through Die-To-Die direct connection technology, which can make the connection between the two very short, the length tends to 0, greatly reduces the parasitic parameters, improves the response speed and performance of the circuit, and realizes the integration of low parasitic parameters in the form of system-level packaging. The invention can realize a driving current of about 200mA and a laser pulse width of ten picoseconds, and is suitable for high-speed communication, biological imaging, laser radar and other fields.
[0054] Working principle: by integrating silicon capacitor, high-speed switch, high-speed drive circuit and high-speed logic circuit interface in the first core particle IC-Die, forming a laser diode structure for emitting laser pulses in the second core particle Laser-Die; through the interconnection mode of core particle parallel stack structure and core particle vertical placement structure, the first core particle is electrically connected with the second core particle, and is integrated and packaged in the same system-in-package SiP; through the logic circuit interface to send control signals to drive the on-off of the high-speed switch, so as to release pulse current by using the silicon capacitor, and drive the laser diode to emit ultrafast laser pulses with a pulse width of 10 picoseconds.
[0055] It should be noted that, in this document, relational terms such as first and second and the like can be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article, or apparatus.
[0056] Although embodiments of the present application have been shown and described, it is to be understood that various modifications, substitutions, alternatives, and variations can be made in the embodiments without departing from the spirit and scope of the present application as defined by the appended claims and their equivalents.
Claims
1. A chip-to-chip integrated ultrafast laser pulse emission module based on silicon capacitors and germanium-silicon switches, characterized in that, include: The system comprises a first chip IC-Die, a second chip Laser-Die, an inter-chip interconnect structure, and a system-in-package structure. The first chip IC-Die integrates silicon capacitors, high-speed switches, high-speed drive circuits, and high-speed logic circuit interfaces. The second core, Laser-Die, is a laser diode configured to output laser pulses with a pulse width of ten picoseconds under the drive of the pulse current generated by the discharge of a silicon capacitor. The inter-chip interconnect structure is configured to make an electrical connection between the first chip IC-Die and the second chip Laser-Die with an extremely short distance and extremely low parasitic parameters. The system-level packaging structure is configured to encapsulate the first chip IC-Die, the second chip Laser-Die, and the interconnection structure between the chips into a single integrated laser emitting module.
2. The integrated ultrafast laser pulse emission module based on silicon capacitors and germanium-silicon switches according to claim 1, characterized in that, The silicon capacitor is manufactured using germanium-silicon technology. It is a MOS capacitor or deep trench silicon capacitor made on a silicon substrate and is configured to be powered by an external power source, and to be charged and store energy under the control of the external power source.
3. The integrated ultrafast laser pulse emission module based on silicon capacitors and germanium-silicon switches according to claim 1, characterized in that, The high-speed switch uses a transistor with a SiGe HBT or SiGe BiCMOS structure, configured to conduct the discharge path of the silicon capacitor after receiving a control signal.
4. The integrated ultrafast laser pulse emission module based on silicon capacitors and germanium-silicon switches according to claim 1, characterized in that, The high-speed drive circuit is configured to drive a high-speed switch to turn on and off rapidly. The high-speed logic circuit interface is configured to receive and process discharge control signals from the outside, and transmit the processing results to the high-speed drive circuit.
5. The integrated ultrafast laser pulse emission module based on silicon capacitors and germanium-silicon switches according to claim 1, characterized in that, The interconnection structure between the core particles includes: a first core particle parallel stacking structure, a second core particle parallel stacking structure, a first core particle vertically placed structure, and a second core particle vertically placed structure interconnection method.
6. A chip-to-particle interconnect integrated ultrafast laser pulse emission method based on silicon capacitors and germanium-silicon switches, implemented based on the chip-to-particle interconnect integrated ultrafast laser pulse emission module based on silicon capacitors and germanium-silicon switches as described in any one of claims 1-5, characterized in that, Includes the following steps: S1. A silicon capacitor, a high-speed switch, a high-speed drive circuit, and a high-speed logic circuit interface are integrated in the first chip IC-Die. Among them, the high-speed switch is manufactured using germanium-silicon technology and is used to control the discharge path of the silicon capacitor. The high-speed drive is used to control the high-speed switch, and the high-speed logic circuit interface is used to process the discharge control signal. S2. Form a laser diode structure in the second core laser-Die; S3. Electrically connect the first IC-Die and the second Laser-Die using interconnection methods such as parallel stacking of the first IC-Die, parallel stacking of the second IC-Die, vertical placement of the first IC-Die, and vertical placement of the second IC-Die. S4. Integrate the first chip IC-Die and the second chip Laser-Die into the same system-in-package (SiP). S5. The external circuit sends a control signal through the logic circuit interface. The drive circuit responds to the control signal to drive the high-speed switch to open and close, uses the silicon capacitor to release the pulse current, and drives the laser diode to emit a laser pulse with a pulse width of 10 picoseconds.
7. The chip-to-chip interconnected ultrafast laser pulse emission method based on silicon capacitors and germanium-silicon switches according to claim 6, characterized in that, S3 employs an interconnection method involving a first core particle parallel stacked structure, a second core particle parallel stacked structure, a first core particle vertically placed structure, and a second core particle vertically placed structure, specifically as follows: The first chip parallel stacked structure includes: horizontally stacking laser diode chips on top of the first chip IC-Die, welding adjacent surfaces, connecting one electrode of the laser diode to the first chip IC-Die, and connecting the other electrode of the laser diode to the first chip IC-Die through a gold wire; The second core parallel stacked structure includes: horizontally stacking the laser diode core on top of the first core IC-Die, welding adjacent surfaces together, connecting one electrode of the laser diode to the first core IC-Die, and connecting the other electrode of the laser diode to the first core IC-Die through gold foil; The first chip vertical placement structure includes: vertically stacking the laser diode chip on top of the first chip IC-Die, and connecting the two poles of the laser diode to the first chip IC-Die by welding the two sides. The second core vertical placement structure includes: vertically stacking the laser diode core on top of the first core IC-Die, with additional metal rods on both sides connected to the two poles of the laser diode and the first core IC-Die respectively, and connecting the two poles of the laser diode to the first core IC-Die to form a heat conduction and support structure.