Ultra-short pulse laser ceramic grading method and equipment for realizing method

Abstract

The invention provides an ultrashort pulse laser ceramic grading method and equipment for realizing the method. The method comprises the following steps: a) adopting an ultrashort pulse laser beam which is generated by a specific SESAM passive mode-locking seed laser and a regenerative amplifier and has the pulse width of 1-15 ps and the monopulse energy of 10 mu J-1 mJ; b) focusing the ultrashort pulse laser beam into a processing light spot with the light spot diameter of 5-50 microns through a light beam shaping transmission module; c) controlling the focused laser beam to perform grain-dividing path processing on the surface of the ceramic workpiece at a scanning speed of 10-1000 mm / s to realize grain-dividing joint cutting with a depth-to-width ratio of more than 10: 1; according to the method, the energy difference between single pulses is smaller than or equal to + / -2%, the difference of peak power between the pulses is smaller than or equal to + / -3%, and the method is stable in working performance, high in consistency, short in action time / low in damage and high in machining precision.

Description

Technical Field

[0001] This invention relates to the field of laser industrial processing methods and equipment technology, specifically to an ultrashort pulse laser ceramic particle separation method and equipment. Background Technology

[0002] With the rapid development of electronics, new energy, aerospace and other fields, high-performance ceramic materials (such as Al2O3, SiC, ZrO2, etc.) are widely used in key components such as semiconductor packaging, solid-state batteries, and medical devices due to their excellent high temperature resistance, high hardness, and corrosion resistance. However, the high hardness and brittleness of ceramic materials pose significant challenges to their precision machining, especially during high-precision particle size distribution (cutting, dicing, drilling, etc.), which can easily lead to problems such as microcracks, edge chipping, and thermal damage, seriously affecting device performance.

[0003] Conventional laser cutting (nanosecond / continuous laser) has a significant heat accumulation effect, which forms a wide heat-affected zone (HAZ, usually >50 μm) in the cutting area, leading to material phase transformation, microcracks, and even delamination. It is particularly effective for processing transparent ceramics (such as YAG) and brittle ceramics (such as SiC).

[0004] Although existing ultrashort pulse picosecond (ps) and femtosecond (fs) lasers can reduce thermal damage through a "cold processing" mechanism, the current technology still has the following problems: 1. Poor parameter adaptability and weak material adaptability: Most studies focus on femtosecond lasers (pulse width <1 ps), but their equipment is expensive and inefficient, and there is a lack of systematic optimization for controlling the ablation threshold of ceramic materials, resulting in unstable processing quality; and they are difficult to adapt to the particle processing of various ceramic materials.

[0005] 2. Insufficient machining precision: Existing picosecond lasers suffer from low photonic resolution, poor single-pulse energy consistency, low pulse peak energy, and large heat-affected zone, making it difficult to achieve high-precision processing quality.

[0006] 3. Lack of real-time monitoring: Existing technologies mostly rely on offline inspection, which cannot dynamically adjust parameters during processing to suppress cracks or thermal damage, resulting in a low yield (especially for ceramic workpieces with a thickness >1 mm).

[0007] To address the aforementioned issues, there is an urgent need to develop a laser ceramic particle separation method and equipment to achieve: high-precision, low-damage processing; intelligent closed-loop control of processing quality; and broad adaptability to particle separation processing of various ceramic materials. Summary of the Invention

[0008] In view of this, in order to overcome the shortcomings of the prior art, the present invention provides an ultrashort pulse laser ceramic particle separation method and device, which breaks through the above-mentioned technical bottlenecks in the prior art and solves the key technical problems.

[0009] A method for ceramic particle separation using ultrashort pulse laser, the method comprising the following steps: (a) An ultrashort pulse laser beam with a pulse width of 1-15 ps and a single pulse energy of 10 μJ-1 mJ is used; the ultrashort pulse laser beam is generated by a SESAM passive mode-locked seed laser and a regenerative amplifier. The SESAM passive mode-locked seed laser uses a single-tube semiconductor laser as the pump source, and obtains a stable output of mode-locked picosecond laser through a resonant cavity arranged in a double Z-shape, and then emits it through a regenerative amplifier that doubles the output of the resonant cavity. (b) The ultrashort pulse laser beam is focused into a processing spot with a diameter of 5-50 μm by a beam shaping and transmission module; (c) Control the focused laser beam to perform particle-splitting path processing on the surface of the ceramic workpiece at a scanning speed of 10-1000 mm / s to achieve a particle-splitting cut with a depth-to-width ratio greater than 10:1. (d) Monitor the plasma emission spectrum of the processing area in real time and dynamically adjust the pulse energy and repetition frequency to suppress crack generation.

[0010] Furthermore, the wavelength of the ultrashort pulse laser is 266nm or 355nm in the ultraviolet band, 532nm in the green band, or 1064nm in the infrared band.

[0011] Furthermore, in step (b), the ultrashort pulse laser beam is focused into a processing spot after passing through a beam expander and then being shaped by a Bessel beam.

[0012] Furthermore, in step (d), the intensity ratio of Al⁺ (394.4 nm) / Al (396.1 nm) spectral lines is detected by the spectral intensity ratio method. When the ratio exceeds the threshold, the pulse energy is reduced by 10%-30%.

[0013] An ultrashort pulse laser ceramic particle separation device for implementing the above method is characterized in that the device comprises: an ultrashort pulse laser source, a beam shaping and transmission system, a five-axis motion platform, an online monitoring module, and a control system; The ultrashort pulse laser source outputs laser with a pulse width of 1-15 ps and a single pulse energy of 10 μJ-1 mJ; The beam shaping and transmission system includes a beam expander, a galvanometer, and an f-theta lens; The five-axis motion platform carries the ceramic workpiece and realizes XYZ linear movement and AB axis rotation; The online monitoring module includes a spectrometer, a high-speed CCD, and an acoustic emission sensor; The control system directs the laser source to start and stop, adjusts laser parameters in real time, precisely controls the motion trajectory of the five-axis motion platform, and receives feedback data from the online monitoring module in real time. The laser beam generated by the laser source is precisely guided to the workpiece surface through the beam shaping and transmission system, while the workpiece is driven by the five-axis motion platform to complete complex processing in collaboration with the laser beam. All parts are integrated and linked through the control system to form an intelligent closed-loop processing system.

[0014] Furthermore, the ultrashort pulse laser source includes a SESAM passive mode-locked seed laser and a regenerative amplifier; The SESAM passive mode-locked seed laser injects pump light with a power range of 1W-10W, and outputs two mode-locked beams, each with a power range of 0.05W-4W. One of the mode-locked beams is selected to be 70MHz-120MHz, with a single pulse energy of 10-500nJ, which is then amplified by the regenerative amplifier. The output light amplified by the regenerative amplifier has a frequency of 50kHz-800kHz and a single pulse energy that is adjustable from 10-300 microjoules. The incident light of the regenerative amplifier forms a 180° angle with the amplified output light.

[0015] Furthermore, the five-axis motion platform adopts air bearing guide rails, with a positioning accuracy of ≤±1 μm and a maximum acceleration of ≥2G.

[0016] Furthermore, the online monitoring module includes a plasma spectral acquisition fiber, the end face of which is installed at a 45° angle to the processing optical axis, improving the acquisition efficiency by more than 20%.

[0017] Furthermore, the control system integrates a digital twin module, which uses a finite element thermodynamic model to predict the thickness of the heat-affected zone at the particle edge and adjusts the laser power accordingly.

[0018] The present invention also provides a ceramic granulation product, which is obtained by the above-described method, wherein the thickness of the heat-affected zone at the granulation edge is <5 μm and the surface roughness Ra is <0.5 μm.

[0019] The beneficial effects of this invention are as follows: 1. This invention is based on the operation of a uniform high-energy single-pulse laser with a single pulse width of 1-15ps. The energy difference between single pulses is ≤±2%, the difference in peak power between pulses is ≤±3%, the working performance is stable, the consistency is high, the action time is short / the damage is low, and the processing accuracy is high.

[0020] 2. This invention controls the heat-affected zone to <5μm and the edge roughness to <0.5μm by optimizing pulse parameters and beam shaping.

[0021] 3. This invention integrates plasma spectral monitoring and digital twin technology to adjust laser parameters and motion trajectory in real time, achieving intelligent closed-loop control. 4. The processing technology of this invention has wide material adaptability: it can cover the efficient particle size division of oxide ceramics (Al2O3, ZrO2), non-oxide ceramics (SiC, Si3N4) and transparent ceramics (YAG). Attached image description:

[0022] Figure 1 Schematic diagram of an ultrashort pulse laser ceramic particle separation device Among them: 1-Ultrashort pulse laser source, 2-Beam transmission system, 3-Five-axis motion platform, 4-Online monitoring module (including spectrometer, high-speed CCD and acoustic emission sensor), 5-Control system; Figure 2 : An optical path structure diagram of one embodiment of the ultrashort pulse laser source of the present invention Among them: 10-SESAM passive mode-locked seed laser, 101-single-tube semiconductor laser, 102-self-focusing lens, 103-laser crystal, 104-plano-concave mirror a, 105-plano-concave mirror b, 106-plane mirror, 107-output mirror, 108-SESAM saturable absorber mirror. 11-Regenerative amplifier; 111-Second polarizer; 112-First quarter-wave plate; 113-Pulse selection switch (1131-Pockmarked cell; 1132-Pockmarked cell high-voltage drive); 114-First 0° total reflection mirror; 115-Third polarizer; 116-Second quarter-wave plate; 117-Pinhole aperture; 118-LD pump laser crystal module; 119-Third quarter-wave plate; 1110-Convex mirror; 1111-Second 0° total reflection mirror; 121-First polarizer; 122-Faraday rotator; 123-Half-wave plate; 13-45° total reflection mirror; A-mode-locked seed laser resonator output light, B-mode-locked seed laser resonator output light C - Output light from the mode-locked seed laser resonator cavity; D - Oscillating light within the mode-locked seed laser resonator cavity; E - Amplified output light from the regenerative amplifier. Detailed Implementation

[0023] The following is a schematic diagram of the appearance of an ultrashort pulse laser ceramic particle separation device according to the present invention, with reference to the accompanying drawings and specific embodiments, to further explain the present invention, which is not limited to the following embodiments.

[0024] All embodiments of the present invention employ a five-axis motion platform (accuracy ±1 μm) + galvanometer scanning (accuracy ±0.5 mrad) and a closed-loop control system (response time <10 ms).

[0025] Quality verification was achieved through crack detection: confocal microscopy (depth resolution 0.1 μm) and phase transformation analysis: XRD diffraction (detection of monoclinic / tetragonal ZrO2 phase transformation).

[0026] Environmental protection measures: HEPA filtration system (dust concentration <0.1 mg / m³). All examples were conducted in a cleanroom with an ambient temperature of 25±3℃ and humidity of <50%.

[0027] Example 1: Optical path structure of the SESAM passive mode-locked seed laser and regenerative amplifier of the present invention The self-focusing lens 102 of the SESAM passive mode-locked seed laser 10 is placed between the single-tube semiconductor laser 101 and the laser crystal 103; a plano-concave mirror a104 is placed on the other side of the laser crystal 103, and the light path passes through the center of the laser crystal and enters the focal point of the plano-concave mirror a104 before incident; a plane mirror 106 is placed at the focal point of the light path after reflection by the plano-concave mirror a104, and the angle between the incident light and the reflected light of the plano-concave mirror a104 is in the range of 0 to 10°; the light path, after passing through the laser crystal, the plano-concave mirror a104, and the plane mirror 106, forms a positive Z-shaped structure; symmetrically, the output mirror 107, the plano-concave mirror b105, and the SESAM saturable absorber mirror 108 form an inverse Z-shaped structure. The structure is as follows: the plane mirror 106 and the output mirror 107 are arranged horizontally, the output mirror 107 is placed on the horizontal line reflected by the plane mirror 106 in the light path, the plane mirror 106 is located at the focal point before the incident light from the plane-concave mirror b105, and the SESAM saturable absorber mirror 108 is located at the focal point after the incident light from the plane-concave mirror b105. The angle between the incident light and the reflected light from the plane-concave mirror b105 is in the range of 0 to 10°. The refracted light from the plane-concave mirror b105 is horizontally incident on the surface of the SESAM saturable absorber mirror 108. The positive Z-shaped structure and the negative Z-shaped structure together constitute a double Z-shaped symmetrical arrangement structure of the resonant cavity.

[0028] A, B, and C are the output beams of the mode-locked seed laser resonator; D is the oscillating beam within the mode-locked seed laser resonator. The pump beam power injected into the mode-locked seed laser is 1W-10W, and the output beams B and C each have a power of 0.05W-4W. One of the mode-locked beams, B, is selected at 70MHz-120MHz, with a single pulse energy of 10-500nJ, and is injected into the regenerative amplifier 12 for amplification.

[0029] The mode-locked seed light B is mode-matched with the injected regenerative amplifier 12 regenerative resonant cavity to obtain the required amplification.

[0030] The regenerative resonant amplification cavity includes a second polarizer 111, a first quarter-wave plate 112, a first 0° total reflection mirror 114, a pulse selection switch 113, a second 0° total reflection mirror 1111, a third polarizer 115, a second quarter-wave plate 116, a pinhole aperture 117, an LD pump laser crystal module 118, a third quarter-wave plate 119, and a convex mirror 1110; The incident mode-locked seed light B is introduced into the regenerative resonant amplification cavity through an optical isolator (composed of a first polarizer 121, a Faraday rotator 122, and a half-wave plate 123) for resonant amplification. Its depolarization is compensated by the third quarter-wave plate 119, and the convex mirror 1110 compensates for the thermal lensing effect. The pinhole aperture 117 filters out higher-order modes of the amplified light, ensuring the beam quality of the incident seed amplified light. The third polarizer 115, the second quarter-wave plate 116, the convex mirror 1110, and the second 0° total reflection mirror 1111 achieve optical path lengthening of the incident seed light within the regenerative resonant amplification cavity. Controlled by the pulse selection switch 113, the amplified seed light is exported from the regenerative resonant amplification cavity. After total internal reflection by the 45° total reflection mirror 13, the regenerated amplified light E is output from the outlet.

[0031] The frequency of the regenerated amplified light E is 50kHz-80kHz, and the single pulse energy is adjustable from 10 to 300 microjoules; the mode-locked light B forms a 180° angle with the regenerated amplified light E.

[0032] The cavity length of the regenerative amplifier 11 with doubled resonant cavity is an integer multiple of the cavity length 10 corresponding to the spacing of the incident mode-locked picosecond laser seed pulses, where the multiple is the number of regenerated and amplified outputs of the selected mode-locked seed pulses after passing through the regenerative resonant amplifier cavity.

[0033] Example 2: Ultrashort pulse laser ceramic particle separation device for implementing the method of the present invention The device includes: 1. Ultrashort pulse laser source; 2. Beam shaping and transmission system; 3. Five-axis motion platform; 4. Online monitoring module; 5. Control system; The ultrashort pulse laser source 1 outputs laser with a pulse width of 1-15 ps and a single pulse energy of 10 μJ-1 mJ; The beam shaping and transmission system 2 includes a beam expander, a galvanometer, and an f-theta lens; The five-axis motion platform 3 carries the ceramic workpiece and realizes XYZ linear movement and AB axis rotation; The online monitoring module 4 includes a spectrometer, a high-speed CCD, and an acoustic emission sensor; The control system 5 adjusts the laser parameters and motion trajectory in real time based on the data from the monitoring module 4, directly commands the start-up, shutdown, and power of the laser source 1, precisely controls the motion trajectory of the five-axis platform 3, and receives feedback data from the online monitoring module 4 in real time. The beam generated by the laser source 1 is precisely guided to the surface of the workpiece through the beam shaping and transmission system 2, while the workpiece is driven by the five-axis platform 3, working in conjunction with the laser beam to complete complex processing. All parts are integrated and linked through the control system to form an intelligent closed-loop processing system.

[0034] The pulse energy error is controlled within ±3%.

[0035] Example 3: The method of the present invention achieves particle size reduction of Al2O3 ceramic (0.5 mm thickness). a) A short pulse laser beam with a wavelength of 1064 nm (infrared), a pulse width of 15 ps, a single pulse energy of 800 μJ, and a repetition frequency of 50 kHz is used; the short pulse laser beam is generated by the SESAM passive mode-locked seed laser and regenerative amplifier described in Example 1; b) The laser beam is shaped from a Gaussian beam into a flat-top beam with a spot diameter of 20 μm by a beam shaping and transmission system that includes a beam expander, a scanning galvanometer, an F-theta focusing lens and a three-dimensional dynamic focusing module. The focusing lens is f=100 mm. c) Control the laser beam to perform three reciprocating scans on the surface of the Al2O3 ceramic workpiece at a scanning speed of 300 mm / s along the grain separation path; d) Monitor the plasma emission spectrum of the processing area in real time, and dynamically adjust the pulse energy and repetition frequency to suppress crack generation; spectral monitoring: the Al⁺ (394.4 nm) / Al (396.1 nm) intensity ratio threshold is set to 1.2, and the pulse energy is reduced by 20% when the threshold is exceeded.

[0036] Processing results: Heat-affected zone (HAZ): <3 μm; Edge roughness (Ra): 0.3 μm; Chipping width: ≤ 5 μm.

[0037] Example 4: The method of the present invention achieves particle size reduction of ZrO2 ceramics (thickness 1.0 mm). a) A short pulse laser beam with a wavelength of 1064 nm (infrared), a pulse width of 15 ps, a single pulse energy of 800 μJ, and a repetition frequency of 50 kHz is used; the short pulse laser beam is generated by the SESAM passive mode-locked seed laser and regenerative amplifier described in Example 1; b) The laser beam is shaped from a Gaussian beam into a flat-top beam with a spot diameter of 20 μm using a beam shaping and transmission system that includes a beam expander, a scanning galvanometer, an F-theta focusing lens, and a three-dimensional dynamic focusing module. The focal point is 20 μm below the workpiece surface for internal cutting. c) Control the laser beam to perform three reciprocating scans on the surface of the ZrO2 ceramic granulation workpiece at a scanning speed of 100 mm / s; and side blow with nitrogen-assisted gas at a pressure of 0.3 MPa. d) Use an acoustic emission sensor: trigger laser shutdown when the detected microcrack frequency is >100 kHz.

[0038] Processing results: Heat-affected zone (HAZ): <8 μm (no phase change); Bending strength retention: 95% (compared to the original material); Cutting taper angle: <1°.

[0039] Example 5: The method of the present invention achieves particle size reduction of SiC ceramic (0.3 mm thickness). a) An ultrashort pulse laser beam with a wavelength of 532 nm (green light), a pulse width of 2 ps, a single pulse energy of 80 μJ, and a repetition frequency of 500 kHz is used; the ultrashort pulse laser beam is generated by the SESAM passive mode-locked seed laser and regenerative amplifier described in Example 1; b) The laser beam is shaped from a Gaussian beam into a Bessel beam with a diffraction-free length of 300μm by a beam shaping and transmission system comprising a beam expander, a reflector, a conical lens, a first focusing lens, a second focusing lens, a third focusing lens, and a fourth focusing lens; the depth of focus is controlled by an adaptive zoom module. c) Control the laser beam to spirally cut into the surface of the SiC ceramic granulation workpiece with a diameter of 50 μm at a scanning speed of 800 mm / s; The processing results show an aspect ratio of 15:1 and a kerf width of 6±0.5 μm. SEM analysis confirmed the absence of microcracks.

[0040] Example 6: The method of the present invention achieves particle size reduction of Si3N4 ceramic (thickness 2.0 mm). a) An ultrashort pulse laser beam with wavelength of 355nm (ultraviolet), pulse width of 7 ps, single pulse energy of 1 mJ, and repetition frequency of 10 kHz is used; the ultrashort pulse laser beam is generated by the SESAM passive mode-locked seed laser and regenerative amplifier described in Example 1; b) The beam is shaped into a multifocal array (5×5 focal points, 40μm spacing) using a beam shaping and transmission system that includes a beam expander, a scanning galvanometer, and an F-theta focusing lens (the lens and mirror are suitable for the ultraviolet band and have a high laser damage threshold). c) Control the laser beam defocusing amount: +0.02 mm (to reduce surface ablation), and use an auxiliary gas of 0.3 MPa as an energy field to help suppress slag adhesion; d) Monitoring and control using plasma imaging: high-speed CCD is used to identify feather asymmetry and automatically compensate for focus shift.

[0041] Processing effect and cutting efficiency: 4 times higher than single-focus cutting; cross-sectional perpendicularity: 89.5°; material removal rate: 8 mm³ / min.

[0042] Example 7: The method of the present invention achieves particle size reduction of YAG transparent ceramic (1.5 mm thickness). a) An ultrashort pulse laser beam with wavelength of 266 nm (deep ultraviolet), pulse width of 1 ps, single pulse energy of 30 μJ, and repetition frequency of 1 MHz is used; the ultrashort pulse laser beam is generated by the SESAM passive mode-locked seed laser and regenerative amplifier described in Example 1; b) A Bessel-Gaussian beam is generated using a spatial light modulator (SLM), and self-focusing is used to induce internal modification—a nonlinear effect: c) Control the laser beam to perform layered processing on the surface of the YAG transparent ceramic granulated workpiece at a scanning speed of 50 mm / s: each layer has a cutting depth of 50 μm (30 layers in total). d) Transmittance monitoring: Adjust pulse energy when the transmittance change in the cutting area is >10% in real time.

[0043] Processing results: Heat-affected zone (HAZ): Undetectable (optical microscope); Laser damage threshold: Maintain original value (>15 J / cm²); Edge light transmission loss: <2%.

[0044] The above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art can still make modifications or equivalent substitutions to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention are within the protection scope of the claims of the present invention pending approval.

Claims

1. A method of ultra-short pulsed laser ceramic fractionation, characterized by, The method comprises the steps of: (a) using an ultrashort pulse laser beam with a pulse width of 1-15 ps and a single pulse energy of 10 μJ-1 mJ; the ultrashort pulse laser beam is generated by a SESAM passively mode-locked seed laser and a regenerative amplifier, the SESAM passively mode-locked seed laser uses a single-tube semiconductor laser as a pump source, and a stable output mode-locked picosecond laser is obtained through a double-Z-shaped resonant cavity, and then the laser is emitted through a resonant cavity doubled regenerative amplifier; (b) focusing the ultrashort pulse laser beam into a processing spot with a spot diameter of 5-50 μm through a beam shaping transmission module; (c) controlling the focused laser beam to process the ceramic workpiece surface at a scanning speed of 10-1000 mm / s to realize a kerf with a depth-to-width ratio greater than 10:1; (d) real-time monitoring of the plasma emission spectrum of the processing area, dynamic adjustment of the pulse energy and repetition frequency to suppress crack generation.

2. The method of claim 1, wherein the wavelength of the ultrashort pulse laser is 266 nm, 355 nm, 532 nm, or 1064 nm.

3. The method of claim 1, wherein the ultrashort pulse laser beam is focused into a processing spot after passing through a beam expander and then a Bessel beam shaper in step (b).

4. The method of claim 1, wherein the spectral intensity ratio method is used to detect the Al⁺(394.4 nm) / Al(396.1 nm) spectral line intensity ratio in step (d), and the pulse energy is reduced by 10%-30% when the ratio exceeds the threshold value. The device comprises an ultrashort pulse laser source (1), a beam shaping transmission system (2), a five-axis motion platform (3), an online monitoring module (4), and a control system (5); The ultrashort pulse laser source (1) outputs a laser beam with a pulse width of 1-15 ps and a single pulse energy of 10 μJ-1 mJ; The beam shaping transmission system (2) includes a beam expander, a galvanometer, and an f-theta lens; 5. An ultra-short pulse laser ceramic fractionating apparatus which implements the method according to any one of claims 1 to 4, characterized by The five-axis motion platform (3) carries the ceramic workpiece and realizes XYZ linear movement and AB axis rotation; The online monitoring module (4) includes a spectrometer, a high-speed CCD, and an acoustic emission sensor; The control system (5) controls the start and stop of the laser source (1) according to the data of the monitoring module (4), adjusts the laser parameters in real time, accurately controls the motion trajectory of the five-axis motion platform (3), and receives the feedback data of the online monitoring module (4) in real time; the beam generated by the laser source (1) is precisely guided to the workpiece surface through the beam shaping transmission system (2), and the workpiece is driven by the five-axis motion platform (3) to complete complex processing cooperatively with the laser beam; all parts are integrated and linked through the control system to form an intelligent closed-loop processing whole.

6. The device of claim 5, wherein the ultrashort pulse laser source (1) comprises a SESAM passively mode-locked seed laser and a regenerative amplifier. ​ ​ ​ ​ The SESAM passively mode-locked seed laser is injected with pump light power in the range of 1 W-10 W, and the output of two mode-locked lights is 0.05 W-4 W; one of the two mode-locked lights is selected to be 70 MHz-120 MHz, and the single-pulse energy is 10-500 nJ, which enters the regenerative amplifier for amplification; the output light frequency of the regenerative amplifier is 50 kHz-800 kHz, and the single-pulse energy is 10-300 microjoules adjustable; The incident light of the regenerative amplifier and the amplified output light form an angle of 180°.

7. The apparatus of claim 5, wherein, The five-axis motion platform (3) adopts air bearing guide rails, and the positioning accuracy is ≤±1 μm, and the maximum acceleration is ≥2G.

8. The apparatus of claim 5, wherein, The online monitoring module (4) comprises a plasma spectrum collection optical fiber (41), the end face of which is installed at an angle of 45° with the machining optical axis, and the collection efficiency is increased by more than 20%.

9. The apparatus of claim 5, wherein, The control system (5) integrates a digital twin module, predicts the thickness of the grain separation edge heat affected zone through a finite element thermodynamic model, and feeds back to adjust the laser power.

10. A ceramic particle classification device characterized by The method of any one of claims 1-4 is used for processing, and the thickness of the grain separation edge heat affected zone is <5 μm, and the surface roughness Ra is <0.5 μm.

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