IEPE vibration sensor and temperature drift self-compensation method thereof
By utilizing thermal stress to regulate the mismatch in the thermal expansion coefficients of materials in a MEMS vibration sensor chip, the stiffness and sensitivity of the MEMS vibration sensor chip are controlled, forming a self-compensation mechanism. This solves the problem of temperature drift in IEPE vibration sensors at high temperatures and improves temperature stability.
Patent Information
- Application Number
- CN202511637106.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-10
- Publication Date
- 2026-02-13
AI Technical Summary
Existing IEPE vibration sensors experience temperature drift at high temperatures due to a decrease in amplifier gain. Current compensation methods increase subsequent data processing and circuit complexity.
By utilizing the mismatch in the thermal expansion coefficients of different materials in the MEMS vibration sensor chip to generate thermal stress, the stiffness of the MEMS vibration sensor chip is adjusted, thereby enhancing its sensitivity. Furthermore, a self-compensation mechanism is formed by the gain attenuation of the IEPE amplifier circuit and the increase in the sensitivity of the MEMS vibration sensor chip.
Without increasing circuit or algorithm complexity, the temperature stability of the IEPE vibration sensor is improved, and the impact of temperature changes on the output signal is reduced.
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Figure CN121521251A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of micro-electro-mechanical system (MEMS) and the field of integrated electronic piezoelectric (IEPE) sensor, in particular to an IEPE vibration sensor and a temperature drift self-compensation method thereof. BACKGROUND
[0002] With the progress of science and technology, the influence of measurement and control technology on modern information society is becoming more and more great. MEMS (Micro Electro Mechanical System) piezoelectric vibration sensor can reliably and stably perceive physical and mechanical parameters such as vibration and impact, and is a key link of intelligent control system and automation industry. At the same time, in complex industrial environment, piezoelectric vibration sensor often needs to be integrated with amplification circuit to form IEPE (Integrated Electronics Piezoelectric) vibration sensor to reduce noise interference in signal transmission process.
[0003] However, the silicon-based device in the amplification circuit is easily affected by temperature, and the amplification gain decreases rapidly with the increase of temperature, thereby causing the IEPE vibration sensor to have large temperature drift. At present, the solution to the temperature drift of the IEPE sensor is mainly to compensate the temperature drift of the sensor through a related fitting algorithm, but this will increase the complexity of subsequent data processing and circuit.
[0004] Therefore, how to solve the temperature drift of the IEPE sensor without increasing the complexity of subsequent data processing and circuit has become one of the problems to be solved by the person skilled in the art.
[0005] It should be noted that the above introduction to the technical background is only to facilitate the clear and complete description of the technical scheme of the present application, and to facilitate the understanding of the person skilled in the art. The above technical scheme cannot be considered as known to the person skilled in the art only because it is described in the background art section of the present application. SUMMARY
[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide an IEPE vibration sensor and a temperature drift self-compensation method thereof, which is used to solve the problems of poor temperature stability of the IEPE sensor, increase of subsequent data processing and circuit complexity of the temperature drift compensation scheme and the like in the prior art.
[0007] To achieve the above-mentioned purpose and other related purposes, the present application provides a temperature drift self-compensation method of an IEPE vibration sensor, which at least comprises:
[0008] The gain of the IEPE amplification circuit decreases when the temperature rises; the rigidity of the MEMS vibration sensor chip is decreased through thermal stress regulation in the MEMS vibration sensor chip, thereby improving the sensitivity of the MEMS vibration sensor chip;
[0009] Through the complementarity of the gain attenuation of the IEPE amplification circuit and the sensitivity increase of the MEMS vibration sensor chip, a temperature drift self-compensation mechanism of the IEPE vibration sensor is formed.
[0010] Optionally, the direction of the thermal stress is adjusted based on the thermal stress regulation, thereby causing the rigidity of the MEMS vibration sensor chip to decrease.
[0011] More optionally, the thermal stress direction includes compressive stress that gradually increases as the temperature rises or tensile stress that gradually decreases as the temperature rises.
[0012] More optionally, the method of thermal stress regulation includes disposing material layers with different thermal expansion coefficients at the level of the MEMS vibration sensor chip and / or the packaging level of the MEMS vibration sensor chip.
[0013] More optionally, the materials of the MEMS vibration sensor chip and the packaging substrate are set such that the thermal expansion coefficient of the MEMS vibration sensor chip is greater than the thermal expansion coefficient of the packaging substrate.
[0014] More optionally, the material of the MEMS vibration sensor chip is set to be silicon, and the material of the packaging substrate is set to be silicon nitride.
[0015] More optionally, a stress regulation structure is added between the MEMS vibration sensor chip and the packaging substrate, and the thermal expansion coefficient of the stress regulation structure is less than the thermal expansion coefficient of the MEMS vibration sensor chip.
[0016] More optionally, the material of the stress regulation structure is set to be fused quartz.
[0017] More optionally, the thickness of at least one of the material layers with different thermal expansion coefficients is adjusted to further adjust the size of the thermal stress.
[0018] To achieve the above-mentioned purposes and other related purposes, the present application provides a temperature drift self-compensating IEPE vibration sensor for realizing the temperature drift self-compensation method of the IEPE vibration sensor, and the temperature drift self-compensating IEPE vibration sensor at least includes:
[0019] The MEMS vibration sensor chip, the IEPE amplification circuit and the packaging substrate; the MEMS vibration sensor chip senses vibration and generates corresponding electrical signals; the IEPE amplification circuit is connected to the output end of the MEMS vibration sensor chip, and is used for amplifying the electrical signals output by the MEMS vibration sensor chip; the MEMS vibration sensor chip and the IEPE amplification circuit are arranged on the same packaging substrate, or are arranged on the respective corresponding packaging substrates;
[0020] When the temperature rises, the complementary self-compensation mechanism is formed by the gain attenuation of the IEPE amplification circuit and the sensitivity rise of the MEMS vibration sensor chip.
[0021] Optionally, the IEPE vibration sensor includes a single-axis or a multi-axis.
[0022] Optionally, the MEMS vibration sensor chip includes a fixed frame, a cantilever beam, a piezoelectric film and a mass block, the cantilever beam is suspended by the fixed frame, the piezoelectric film is arranged on the surface of the cantilever beam, and the mass block is arranged at one end of the cantilever beam away from the fixed frame.
[0023] More optionally, the material of the piezoelectric film includes one of aluminum nitride, scandium-doped aluminum nitride, lithium niobate, lead zirconate titanate and lithium tantalate.
[0024] Optionally, the IEPE amplification circuit includes a junction field effect transistor, a bipolar transistor, a feedback capacitor and a voltage dividing resistor network.
[0025] The junction field effect transistor serves as an input stage amplification circuit and receives the output signal of the MEMS vibration sensor chip.
[0026] The bipolar transistor serves as an output stage amplification circuit and receives the output signal of the junction field effect transistor.
[0027] One end of the feedback capacitor is connected to the input end of the junction field effect transistor, and the other end is connected to the output end of the junction field effect transistor.
[0028] The voltage dividing resistor network is connected between the input end of the junction field effect transistor and the output end of the junction field effect transistor, and is used for establishing a direct current static working point.
[0029] As described above, the IEPE vibration sensor and the temperature drift self-compensation method thereof have the following beneficial effects:
[0030] The IEPE vibration sensor and the temperature drift self-compensation method thereof utilize the characteristics of the thermal expansion coefficient mismatch between different materials at the MEMS vibration sensor chip or packaging level, and the direction of the thermal stress is designed purposefully, so that when the temperature rises, the stiffness of the MEMS vibration sensor chip decreases and the sensitivity increases; thus, the gain attenuation of the IEPE amplification circuit at high temperature is complementary, forming a self-compensation mechanism, and the temperature stability of the IEPE vibration sensor can be improved without additional external compensation. BRIEF DESCRIPTION OF DRAWINGS
[0031] Figure 1 A flowchart diagram of the temperature drift self-compensation method of the IEPE vibration sensor of the present application is shown.
[0032] Figure 2 A circuit structure diagram of the IEPE vibration sensor of the present application is shown.
[0033] Figure 3 A structure diagram of the MEMS vibration sensor chip and the packaging substrate of the present application is shown.
[0034] Figure 4 A cross-sectional structure diagram of the AA direction of the present application is shown. Figure 3
[0035] Figure 5 A principle diagram of the thermal stress generated on the MEMS vibration sensor chip of the present application is shown.
[0036] Figure 6 Another structure diagram of the MEMS vibration sensor chip and the packaging substrate of the present application is shown.
[0037] Figure 7 An effect diagram of the temperature drift self-compensation method of the IEPE vibration sensor of the present application is shown.
[0038] Element number explanation
[0039] 1-IEPE vibration sensor; 11-MEMS vibration sensor chip; 111-fixed frame; 112-cantilever beam; 113-piezoelectric film; 114-mass block; 12-IEPE amplification circuit; 121-voltage dividing resistor network; 13-power supply; 14-stress regulation structure; 2-packaging substrate. DETAILED DESCRIPTION
[0040] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0041] Please see Figures 1-7 As shown. It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.
[0042] To address the problems existing in the prior art and improve the temperature stability of MEMS-based IEPE vibration sensors, enabling them to accurately and in real-time detect vibration signals in complex and variable application scenarios, this invention proposes a temperature drift self-compensation method for IEPE vibration sensors based on MEMS thermal stress regulation.
[0043] like Figure 1 As shown, the temperature drift self-compensation method of this IEPE vibration sensor includes:
[0044] When the temperature rises, the gain of the IEPE amplifier circuit decreases; in the MEMS vibration sensor chip, the stiffness of the MEMS vibration sensor chip is reduced by thermal stress modulation, thereby improving the sensitivity of the MEMS vibration sensor chip.
[0045] The temperature drift self-compensation mechanism of the IEPE vibration sensor is formed by the complementary relationship between the gain attenuation of the IEPE amplifier circuit and the sensitivity increase of the MEMS vibration sensor chip.
[0046] like Figure 2As shown, the IEPE vibration sensor 1 includes a MEMS vibration sensor chip 11 and an IEPE amplifier circuit 12. The MEMS vibration sensor chip 11 senses vibration and generates a corresponding electrical signal. The IEPE amplifier circuit 12 is connected to the output terminal of the MEMS vibration sensor chip 11 and is used to amplify the electrical signal (charge) output by the MEMS vibration sensor chip 11. When the temperature rises, the carrier concentration of the silicon-based device in the IEPE amplifier circuit 12 increases, and the carrier mobility decreases, resulting in a decrease in the gain of the IEPE amplifier circuit 12. At the same time, in the MEMS vibration sensor chip 11, the mismatch of the thermal expansion coefficients between different materials will generate thermal stress, causing a change in the sensor structure stiffness, and thus generating sensor temperature drift. Through thermal stress regulation, the stiffness of the MEMS vibration sensor chip 11 decreases and the sensitivity increases when the temperature rises. The temperature drift in the IEPE amplifier circuit 12 that causes a decrease in gain and the temperature drift in the MEMS vibration sensor chip 11 that causes an increase in sensitivity complement (cancel each other), thereby reducing the impact of temperature changes on the output signal of the IEPE vibration sensor 1.
[0047] Specifically, such as Figure 2 As shown, in this embodiment, the equivalent circuit of the MEMS vibration sensor chip 11 includes the charge Qpe generated by the sensor, the sensor's own capacitance Cpe, and the sensor's own resistance Rpe, all three connected in parallel. Figure 3 and Figure 4 As shown, in this embodiment, the MEMS vibration sensor chip 11 achieves vibration detection based on the piezoelectric effect. It includes a fixed frame 111, a cantilever beam 112, a piezoelectric film 113, and a mass block 114. The cantilever beam 112 is suspended by the fixed frame 111. The piezoelectric film 113 is disposed on the surface of the cantilever beam 112, and the mass block 114 is disposed at the end of the cantilever beam 112 away from the fixed frame 111. The fixed frame 111, cantilever beam 112, mass block 114, and piezoelectric film 113 are all integrally formed using semiconductor technology. In this example, except for the piezoelectric film 113, the materials of the other structures are the same. The piezoelectric material of the piezoelectric film includes, but is not limited to, aluminum nitride, scandium-doped aluminum nitride, lithium niobate, lead zirconate titanate, and lithium tantalate. In this example, the thickness of the piezoelectric film 113 is set to 0.1 μm ~ 10 μm. The fixed frame 111 of the MEMS vibration sensor chip 11 is connected to the packaging substrate 2 by an adhesive, thereby providing stable support. In practical applications, any MEMS sensor structure capable of vibration detection is applicable to this invention, and will not be described in detail here.
[0048] Specifically, such as Figure 2As shown, in this embodiment, the IEPE amplifier circuit 12 includes a junction field-effect transistor (JFET), a bipolar junction transistor (BJT), a feedback capacitor Cf, and a voltage divider resistor network 121. The JFET serves as the input stage amplifier circuit, with its gate receiving the output signal from the MEMS vibration sensor chip 11. The source and drain of the JFET can be connected to appropriate devices or ports as needed to achieve input stage amplification; details are omitted here. The BJT serves as the output stage amplifier circuit, with its base receiving the output signal from the JFET. The emitter and collector of the BJT can be connected to appropriate devices or ports as needed; details are omitted here. One end of the feedback capacitor Cf is connected to the input terminal of the JFET, and the other end is connected to the output terminal of the BJT. The voltage divider resistor network 121 is connected between the input terminal of the junction field-effect transistor (JFET) and the output terminal of the junction field-effect transistor (BJT) to establish a DC quiescent operating point. In one example, the voltage divider resistor network 121 includes a first resistor R1, a second resistor R2, and a third resistor R3. The first resistor R1 and the second resistor R2 are connected in series between the input terminal of the JFET and the output terminal of the BJT. One end of the third resistor R3 is connected to the connection node of the first resistor R1 and the second resistor R2, and the other end is grounded. In practical applications, any structure capable of amplifying the voltage or charge of the signal output from the MEMS vibration sensor chip 11 is applicable to this invention, including but not limited to operational amplifiers, which will not be elaborated here.
[0049] Specifically, such as Figure 2 As shown, in this embodiment, the output terminal of the IEPE amplifier circuit 12 is further provided with a power supply 13 and an output capacitor Cout. The output terminal of the power supply 13 is connected to the output terminal of the IEPE amplifier circuit 12 and is used to provide a current of 2mA to 20mA. One end of the output capacitor Cout is connected to the output terminal of the IEPE amplifier circuit 12, and the other end outputs a signal.
[0050] Specifically, in this embodiment, the desired thermal stress direction is obtained by controlling the thermal stress. This thermal stress direction presents as compressive stress that gradually increases with temperature or tensile stress that gradually decreases with temperature on the cantilever beam of the MEMS vibration sensor chip 11. This achieves the purpose of making the mechanical stiffness of the MEMS vibration sensor chip 11 decrease with temperature and generating a positive temperature drift that increases sensitivity.
[0051] Specifically, in this embodiment, the thermal stress control method includes setting material layers with different coefficients of thermal expansion on the layer of the MEMS vibration sensor chip 11 and / or the packaging layer of the MEMS vibration sensor chip 11, and generating thermal stress through the mismatch of the coefficients of thermal expansion between different materials.
[0052] As one implementation, the materials 2 of the MEMS vibration sensor chip 11 and the packaging substrate are configured such that the coefficient of thermal expansion of the MEMS vibration sensor chip 11 is greater than that of the packaging substrate 2, thereby reducing the stiffness of the MEMS vibration sensor chip 11. In one example, the material of the MEMS vibration sensor chip 11 is set to silicon (e.g., silicon). Figure 3 and Figure 4 As shown, in this example, the fixed frame 111, cantilever beam 112, and mass block 114 are all made of silicon, while the packaging substrate 2 is made of silicon nitride, whose coefficient of thermal expansion is less than that of silicon. Figure 5 As shown, when the temperature rises, the thermal expansion of the packaging substrate 2 is less than that of the MEMS vibration sensor chip 11. This results in a compressive stress on the MEMS vibration sensor chip 11 that gradually increases with temperature, thereby reducing the mechanical stiffness of the MEMS vibration sensor chip 11 and increasing its sensitivity. In practical applications, appropriate materials can be selected as needed to increase the sensitivity of the MEMS vibration sensor chip 11, and this embodiment is not the only option.
[0053] Furthermore, the thickness of at least one of the material layers with different coefficients of thermal expansion can be adjusted to further regulate the magnitude of thermal stress. As an example, the thickness of the fixing frame 111 or the packaging substrate 2 can be adjusted; in general use, adjusting the thickness of the packaging substrate 2 is more convenient.
[0054] As another implementation, a stress regulation structure 14 is added between the MEMS vibration sensor chip 11 and the packaging substrate 2. The coefficient of thermal expansion of the stress regulation structure 14 is smaller than that of the MEMS vibration sensor chip 11. Figure 6 As shown, the stress regulation structure 14 is disposed at the bottom of the MEMS vibration sensor chip 11. The material of the MEMS vibration sensor chip 11 is silicon, and the material of the stress regulation structure 14 is fused silica. Fused silica has an extremely low coefficient of thermal expansion (less than that of silicon), which can generate a large compressive stress on the MEMS vibration sensor chip 11 during the heating process. Furthermore, the magnitude of thermal stress can be controlled by changing the thickness of the stress regulation structure 14 (or the material layer of the MEMS vibration sensor chip 11), thereby causing different degrees of temperature drift in the MEMS vibration sensor chip 11.
[0055] like Figure 2 As shown, in this embodiment, the open-loop gain G of the IEPE amplifier circuit 12 is:
[0056] ;
[0057] Where gm is the transconductance of the junction field-effect transistor (JFET), and R D R is the drain load resistor of a junction field-effect transistor (JFET). S This is the source resistance of the JFET. Due to the influence of phonon scattering, the mobility of charge carriers gradually decreases with increasing temperature, resulting in a gradual decrease in the transconductance of the JFET. The drain load resistance of the JFET is also affected by the next stage, the BJT, and also shows a decreasing trend with increasing temperature. Together, these factors lead to a gradual decrease in open-loop gain with increasing temperature.
[0058] The charge amplification factor S of the IEPE amplifier circuit 12 Amp for:
[0059] ;
[0060] Where Vout is the output voltage of the IEPE amplifier circuit 12, Cf is the feedback capacitor, and Cpe is the sensor's own capacitance. As the open-loop gain G gradually decreases with increasing temperature, the charge amplification factor of the IEPE charge amplifier circuit gradually decays, resulting in a decrease in the temperature stability of the IEPE vibration sensor.
[0061] After combining the MEMS vibration sensor chip 11 with the IEPE amplifier circuit 12 to form an IEPE vibration sensor, when the temperature rises, the gain of the IEPE amplifier circuit 12 decreases, but the sensitivity of the MEMS vibration sensor chip 11, which is controlled by thermal stress, increases, thus forming self-compensation and reducing the temperature drift of the overall IEPE vibration sensor. Figure 7 As shown, the temperature stability of the IEPE vibration sensor is greatly improved after self-compensation.
[0062] The present invention also provides an IEPE vibration sensor 1 with self-compensating temperature drift, comprising:
[0063] The MEMS vibration sensor chip 11, IEPE amplifier circuit 12, and packaging substrate 2 are described above, and will not be repeated here. The MEMS vibration sensor chip 11 and IEPE amplifier circuit 12 are disposed on the same packaging substrate 2, or separately on their respective corresponding packaging substrates 2. The IEPE vibration sensor 1 forms a self-compensation mechanism based on the temperature drift self-compensation method of the present invention.
[0064] Specifically, the IEPE vibration sensor 1 includes single-axis or multi-axis sensors, which can be set according to actual needs.
[0065] It should be noted that any IEPE vibration sensor structure that can achieve temperature drift complementarity through the mismatch of thermal expansion coefficients between different materials is applicable to the present invention, and is not limited to this embodiment.
[0066] In summary, this invention provides an IEPE vibration sensor and its temperature drift self-compensation method, comprising: when the temperature rises, the gain of the IEPE amplifier circuit decreases; in the MEMS vibration sensor chip, thermal stress is controlled to reduce the stiffness of the MEMS vibration sensor chip, thereby increasing the sensitivity of the MEMS vibration sensor chip; through the complementarity of the gain attenuation of the IEPE amplifier circuit and the increase in sensitivity of the MEMS vibration sensor chip, a temperature drift self-compensation mechanism for the IEPE vibration sensor is formed. This invention's temperature drift self-compensation method for IEPE vibration sensors based on MEMS thermal stress control utilizes the mismatch in thermal expansion coefficients between different materials at the MEMS vibration sensor chip or packaging level to design the direction of thermal stress, thereby making the temperature drift of the MEMS vibration sensor complementary to the temperature drift of the IEPE amplifier circuit, forming a self-compensation mechanism. This improves the temperature stability of the IEPE vibration sensor without the need for additional circuit or algorithm compensation. Therefore, this invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.
[0067] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.
Claims
1. A method for self-compensation of temperature drift in an IEPE vibration sensor, characterized in that, The temperature drift self-compensation method for the IEPE vibration sensor includes at least the following: When the temperature rises, the gain of the IEPE amplifier circuit decreases; in the MEMS vibration sensor chip, the stiffness of the MEMS vibration sensor chip is reduced by thermal stress modulation, thereby improving the sensitivity of the MEMS vibration sensor chip. The temperature drift self-compensation mechanism of the IEPE vibration sensor is formed by the complementarity between the gain attenuation of the IEPE amplifier circuit and the sensitivity increase of the MEMS vibration sensor chip.
2. The temperature drift self-compensation method for the IEPE vibration sensor according to claim 1, characterized in that: The direction of thermal stress is adjusted based on the regulation of the thermal stress, thereby reducing the stiffness of the MEMS vibration sensor chip.
3. The temperature drift self-compensation method for the IEPE vibration sensor according to claim 2, characterized in that: The thermal stress direction includes compressive stress that gradually increases with increasing temperature or tensile stress that gradually decreases with increasing temperature.
4. The temperature drift self-compensation method for the IEPE vibration sensor according to any one of claims 1 to 3, characterized in that: The method for controlling thermal stress includes setting material layers with different coefficients of thermal expansion on the layer of the MEMS vibration sensor chip and / or the packaging layer of the MEMS vibration sensor chip.
5. The self-compensation method for temperature drift of the IEPE vibration sensor according to claim 4, characterized in that: The materials of the MEMS vibration sensor chip and the packaging substrate are configured such that the coefficient of thermal expansion of the MEMS vibration sensor chip is greater than that of the packaging substrate.
6. The temperature drift self-compensation method for the IEPE vibration sensor according to claim 5, characterized in that: The MEMS vibration sensor chip is made of silicon, and the packaging substrate is made of silicon nitride.
7. The temperature drift self-compensation method for the IEPE vibration sensor according to claim 4, characterized in that: A stress-regulating structure is added between the MEMS vibration sensor chip and the packaging substrate, wherein the coefficient of thermal expansion of the stress-regulating structure is smaller than that of the MEMS vibration sensor chip.
8. The temperature drift self-compensation method for the IEPE vibration sensor according to claim 7, characterized in that: The stress-regulating structure is made of fused silica.
9. The self-compensation method for temperature drift of the IEPE vibration sensor according to claim 4, characterized in that: Adjusting the thickness of at least one material layer among material layers with different coefficients of thermal expansion further enables the adjustment of the magnitude of thermal stress.
10. A temperature drift self-compensating IEPE vibration sensor, used to implement the temperature drift self-compensation method for the IEPE vibration sensor as described in any one of claims 1-9, characterized in that, The temperature drift self-compensating IEPE vibration sensor includes at least: The system comprises a MEMS vibration sensor chip, an IEPE amplifier circuit, and a packaging substrate; the MEMS vibration sensor chip senses vibration and generates a corresponding electrical signal; the IEPE amplifier circuit is connected to the output terminal of the MEMS vibration sensor chip and is used to amplify the electrical signal output by the MEMS vibration sensor chip; the MEMS vibration sensor chip and the IEPE amplifier circuit are disposed on the same packaging substrate, or respectively disposed on their respective corresponding packaging substrates. As the temperature rises, the gain attenuation of the IEPE amplifier circuit and the increase in sensitivity of the MEMS vibration sensor chip complement each other to form a self-compensation mechanism.
11. The temperature drift self-compensating IEPE vibration sensor according to claim 10, characterized in that: The IEPE vibration sensor includes single-axis or multi-axis sensors.
12. The temperature drift self-compensating IEPE vibration sensor according to claim 10, characterized in that: The MEMS vibration sensor chip includes a fixed frame, a cantilever beam, a piezoelectric film, and a mass block. The cantilever beam is suspended by the fixed frame, the piezoelectric film is disposed on the surface of the cantilever beam, and the mass block is disposed at the end of the cantilever beam away from the fixed frame.
13. The temperature drift self-compensating IEPE vibration sensor according to claim 12, characterized in that: The piezoelectric thin film is made of one of the following materials: aluminum nitride, scandium-doped aluminum nitride, lithium niobate, lead zirconate titanate, and lithium tantalate.
14. The temperature drift self-compensating IEPE vibration sensor according to claim 10, characterized in that: The IEPE amplifier circuit includes a junction field-effect transistor, a bipolar transistor, a feedback capacitor, and a voltage divider resistor network. The junction field-effect transistor serves as the input stage amplifier circuit, receiving the output signal from the MEMS vibration sensor chip. The bipolar transistor serves as the output stage amplifier circuit, receiving the output signal from the junction field-effect transistor. One end of the feedback capacitor is connected to the input terminal of the junction field-effect transistor (JFET), and the other end is connected to the output terminal of the JFET. The voltage divider resistor network is connected between the input terminal and the output terminal of the junction field-effect transistor (JFET) to establish a DC static operating point.