Laser device, processing method and quantum equipment

Abstract

The invention provides a laser device, a processing method and quantum equipment, and relates to the technical field of quantum computing, the laser device comprises a laser source and a modulation module, and the modulation module comprises a phase modulation unit, an arbitrary waveform generation unit, a filtering unit and an intensity modulation unit. The arbitrary waveform generation unit provides a first voltage signal and a second voltage signal, and the phase modulation unit cooperates with the first voltage signal to form a second laser beam based on a first laser beam emitted by the laser source. And the filtering unit screens out the mth-order sub-beam in the second laser beam, and the intensity modulation unit cooperates with the second voltage signal to form a target beam based on the mth-order sub-beam for quantum state coherent transfer and / or construction of a fast entanglement gate. Wherein based on the first voltage signal and the second voltage signal, the frequency of the target light beam and the waveform and the period of the target light beam are respectively adjustable, and programmable tuning of the target light beam is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of quantum computing, and in particular to a laser device, a processing method and a quantum device for quantum state coherent transfer and quantum entanglement gate construction. BACKGROUND

[0002] In the field of quantum computing, realizing quantum state coherent transfer and quantum entanglement is a key step to promote the practicality of quantum computing technology. The realization of quantum state coherent transfer and quantum entanglement has high requirements for the editability of various parameters of laser pulses, such as pulse frequency, waveform, period, intensity, etc. Therefore, how to provide laser pulses meeting the requirements has become a key problem for those skilled in the art. SUMMARY

[0003] Therefore, the present application provides a laser device, a processing method and a quantum device, and the scheme is as follows:

[0004] The present application provides a laser device for quantum state coherent transfer and fast entanglement gate construction, comprising a laser source and a modulation module, wherein the modulation module comprises a phase modulation unit, an arbitrary waveform generation unit, a filter unit and an intensity modulation unit.

[0005] The laser source emits a first laser beam.

[0006] The arbitrary waveform generation unit provides a first voltage signal and a second voltage signal, and the phase modulation unit is located on the transmission path of the first laser beam. The phase modulation unit cooperates with the first voltage signal to form a second laser beam based on the first laser beam. The second laser beam is a composite light beam comprising multiple sub-beams.

[0007] The filter unit is located on the transmission path of the second laser beam, and the mth sub-beam in the second laser beam is screened out, m≥1, and the frequency of the mth sub-beam is a first preset value based on the first voltage signal.

[0008] The intensity modulation unit is located on the transmission path of the mth sub-beam, and the intensity modulation unit cooperates with the second voltage signal to form a target light beam based on the mth sub-beam. The target light beam is a pulse light beam, and the waveform of the target light beam is a preset waveform and the pulse period is a second preset value based on the second voltage signal.

[0009] The target light beam is transmitted to a target region and acts on target ions in the target region to perform quantum state coherent transfer and / or construct a fast entanglement gate.

[0010] Optionally, the modulation module further comprises a power amplifier, the power amplifier comprises a first-stage power amplifier and a second-stage power amplifier, and the intensity modulation unit is located between the first-stage power amplifier and the second-stage power amplifier.

[0011] The first-stage power amplifier is located on a transmission path of the mth-order sub-beam, and the second-stage power amplifier is located on a transmission path of the target beam.

[0012] The intensity of the target beam is a third preset value based on the power amplifier.

[0013] The filtering unit comprises a grating filtering device or a Fabry-Perot cavity filtering device.

[0014] The grating filtering device comprises, in sequence along a transmission direction of the second laser beam, a beam expander, a first grating, a first mirror, a first lens, a mask, a second lens, a second grating, and a beam reducer; the second laser beam is transmitted to the mask in sequence through the beam expander, the first grating, the first mirror, and the first lens, the mask screens out the mth-order sub-beam in the second laser beam; and the mth-order sub-beam is output in sequence through the second lens, the second grating, and the beam reducer.

[0015] The Fabry-Perot cavity filtering device comprises, in sequence along a transmission direction of the second laser beam, an incident collimating mirror, a Fabry-Perot cavity, and an exit collimating mirror; the Fabry-Perot cavity is composed of oppositely arranged first and second cavity mirrors, a resonant cavity is formed between the first and second cavity mirrors, and the first and / or second cavity mirror is a partially reflective mirror.

[0016] The second laser beam is incident to the Fabry-Perot cavity after collimation by the incident collimating mirror, the mth-order sub-beam in the second laser beam is screened out, and the mth-order sub-beam is output after collimation by the exit collimating mirror.

[0017] Optionally, the laser device further comprises a wavelength conversion module, and the wavelength conversion module is located on a transmission path of the target beam.

[0018] The wavelength conversion module comprises a first beam splitter and a frequency doubling crystal; a part of the target beam of a fundamental frequency is reflected and output by the first beam splitter, and another part is transmitted to the frequency doubling crystal through the first beam splitter; the frequency doubling crystal outputs the target beam of a second frequency based on the target beam of the fundamental frequency transmitted thereto.

[0019] At least one of the target beam of the fundamental frequency and the target beam of the second frequency is the target beam, and the target beam of the fundamental frequency is the target beam without frequency doubling.

[0020] Optionally, the wavelength conversion module further comprises a second beam splitter and a frequency mixing crystal.

[0021] The target light beams at the fundamental frequency and the target light beams at the second harmonic frequency are transmitted through the second beam splitter, a part of which is reflected and output, and a part of which is transmitted through the second beam splitter and transmitted to the frequency mixing crystal. The frequency mixing crystal outputs target light beams at the third harmonic frequency based on the target light beams at the fundamental frequency and the target light beams at the second harmonic frequency transmitted thereto.

[0022] At least one of the target light beams at the fundamental frequency, the target light beams at the second harmonic frequency and the target light beams at the third harmonic frequency is the target light beam.

[0023] Optionally, the laser device further comprises a reverse module, the reverse module comprising a polarizer and a third mirror, the target light beam comprising a first target light beam and a second target light beam.

[0024] The modulation module alternately outputs the first target light beam and the second target light beam, and the first target light beam and the second target light beam are transmitted to the target region to jointly act on target ions in the target region to perform quantum state coherent transfer and / or construct a fast entanglement gate based on the first target light beam and the second target light beam.

[0025] The second target light beam is transmitted to the third mirror through the polarizer, reflected by the third mirror, and then transmitted to the target region through the polarizer to act on ions in the target region. The third mirror is arranged on a displacement table, and the displacement table adjusts the position of the third mirror so that the second target light beam and the first target light beam simultaneously act on target ions in the target region.

[0026] The application also provides a processing method applied to the laser device for quantum state coherent transfer and fast entanglement gate construction.

[0027] The laser source emits a first laser beam.

[0028] The arbitrary waveform generation unit provides a first voltage signal and a second voltage signal.

[0029] The phase modulation unit is located on the transmission path of the first laser, and cooperates with the first voltage signal to form a second laser beam based on the first laser beam. The second laser beam is a composite light beam comprising multiple sub-beams.

[0030] The filtering unit is located on the transmission path of the second laser beam, and filters out the m-th order sub-beam in the second laser beam. Based on the first voltage signal, the frequency of the m-th order sub-beam is a first preset value.

[0031] The intensity modulation unit is located on the transmission path of the m-th order sub-beam. The intensity modulation unit, in conjunction with the two voltage signals, forms a target beam based on the m-th order sub-beam. The target beam is a pulse beam. Based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value.

[0032] Based on the target beam transmitted to the target region and acting on the target ions in the target region, quantum state coherent transfer and / or construction of fast entanglement gates are performed.

[0033] Optionally, based on the first voltage signal, the frequency of the m-th order sub-beam being a first preset value includes:

[0034] Based on the frequency of the first voltage signal, the frequency of the m-th order sub-beam is the first preset value;

[0035] Based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value, including:

[0036] Based on the waveform of the second voltage signal, the waveform of the target beam is the preset waveform;

[0037] Based on the period of the second voltage signal, the pulse period of the target beam is the second preset value.

[0038] Optionally, the modulation module further includes a power amplifier, which includes a first-stage power amplifier and a second-stage power amplifier. The intensity modulation unit is located between the first-stage power amplifier and the second-stage power amplifier. The first-stage power amplifier is located on the transmission path of the m-th order sub-beam, and the second-stage power amplifier is located on the transmission path of the target beam. The processing method further includes:

[0039] Based on the power amplifier, the intensity of the target beam is a third preset value;

[0040] Wherein, based on the first-stage power amplifier, the intensity of the m-th order sub-beam is a fourth preset value, and the intensity modulation unit forms the target beam based on the m-th order sub-beam with the intensity of the fourth preset value;

[0041] Based on the second-stage power amplifier, the intensity of the target beam is the third preset value.

[0042] This application also provides a quantum device, including the laser device described in any of the above claims.

[0043] Compared with related technologies, the beneficial effects of the technical solution of this application are as follows:

[0044] The laser device includes a laser source and a modulation module. The modulation module includes a phase modulation unit, an arbitrary waveform generation unit, and a filtering unit. The laser source emits a first laser beam, and the arbitrary waveform generation unit provides a first voltage signal and a second voltage signal. The phase modulation unit, in conjunction with the first voltage signal, forms a second laser beam based on the first laser beam. The second laser beam is a composite beam including multiple order sub-beams, specifically a superposition beam of infinitely many order sub-beams. The filtering unit selects the m-th order sub-beam from the second laser beam. The m-th order sub-beam can be any one of the infinitely many order sub-beams in the second laser beam. Based on the first voltage signal, the frequency of the m-th order sub-beam is a first preset value. The intensity modulation unit, in conjunction with the second voltage signal, forms a target beam based on the m-th order sub-beam. Based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value. This laser device can achieve programmable modulation of the frequency, waveform, and period of the target beam based on the first and second voltage signals, that is, it achieves programmable modulation of the beam frequency, waveform, and period used for quantum state coherent transfer and / or construction of fast entanglement gates. Therefore, this laser device can precisely generate the required laser pulses by designing a suitable target beam, achieving high-fidelity quantum state coherent transfer and constructing fast entanglement gates. Furthermore, by using an AC voltage signal provided by an arbitrary waveform generation unit in conjunction with a phase modulation unit and an intensity modulation unit, the device can tune the frequency, period, and waveform of the target beam without requiring complex auxiliary optical paths, making it simple to operate and more practical. Attached Figure Description

[0045] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0046] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size should still fall within the scope of the technical content disclosed in this application, provided that they do not affect the effects and purposes that this application can produce.

[0047] Figure 1 A schematic diagram of the structure of a laser device provided in this application;

[0048] Figure 2 This application provides a schematic diagram of the structure of a modulation module in a laser device.

[0049] Figure 3 This application provides a schematic diagram of the structure of a grating filter device in a laser apparatus;

[0050] Figure 4 This application provides a schematic diagram of the structure of a wavelength conversion module in a laser device.

[0051] Figure 5 This application provides a schematic diagram of the structure of a reverse module in a laser device.

[0052] Figure 6 A flowchart of a processing method provided in this application. Detailed Implementation

[0053] The embodiments of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0054] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0055] Ion trap systems are one of the most promising platforms for realizing quantum computing. Exploring methods for coherent quantum state transfer and quantum entanglement in ion trap systems is of great significance to the development of quantum computing.

[0056] Coherent quantum state transfer: In ion trap systems, most qubits are encoded at the hyperfine level of the ion's ground state. Coherent transfer between qubits is generally achieved through two-photon transitions, specifically a Raman process involving two pulses of light. By adjusting the parameters of the two pulses, different protocols can be used to complete the coherent quantum state transfer process. For example: ① Stimulated Raman transition (SRT): This method is simple to operate but sensitive to light intensity. ② Adiabatic Rapid Passage (ARP): This method is complex to operate but insensitive to light intensity and phase. ③ Stimulated Raman Adiabatic Rapid Passage (STIRARP): This method is simple to operate and insensitive to light intensity and phase, but sensitive to the time difference between the two pulses. ④ Dynamical Decoupling (DE): This method is complex to operate but insensitive to phase. It is evident that different quantum state phase transfer protocols have different advantages and disadvantages, and different application scenarios may require the execution of different quantum state coherent transfer protocols. Furthermore, executing different quantum state coherent transfer protocols necessitates various tunings of the pulsed light. Traditional pulsed lasers have difficult-to-tune parameters of their output pulsed light, thus requiring additional optical path configurations for control. This significantly increases the complexity of the optical path and reduces operational fidelity.

[0057] Construction of Fast Entanglement Gates: In ion trap systems, there are two main ways to construct entanglement gates: one is to apply a spin-dependent force to ions using continuous laser light, and the other is to apply a spin-dependent kick to ions using pulsed light. Although both methods can achieve entanglement between multiple ion spin levels, the pulsed light approach has a faster operating speed and greater scalability, making it suitable for large-scale quantum computing.

[0058] The method of constructing entanglement gates by applying spin-dependent impulses to ions using pulsed light requires high precision in controlling the pulse timing. Currently, most laser pulses used to construct entanglement gates are generated by mode-locked lasers. However, mode-locked lasers produce pulses with fixed intervals, making it impossible to obtain the required pulse at any given time. This forces the selection of suitable pulses from a fixed pulse sequence to complete the entanglement gate construction, often resulting in low fidelity. Furthermore, traditional mode-locked pulsed lasers have low repetition rates, typically below 100 Hz, while pulsed light schemes require a large number of pulses to complete the entanglement operation within a short time (usually less than one microsecond). Therefore, mode-locked pulsed lasers cannot provide sufficient pulse resources for selection. These drawbacks make entanglement gate construction using mode-locked lasers as pulse sources extremely difficult and also lead to low fidelity in the final entanglement gate.

[0059] In summary, most current pulsed light cannot meet the requirements for coherent quantum state transfer and fast entanglement gate construction. Therefore, how to provide laser pulses that meet the requirements has become a key issue for those skilled in the art.

[0060] Based on the above, this application provides a laser device that can be used for coherent quantum state transfer and fast entanglement gate construction. For example... Figure 1 As shown, Figure 1 This application provides a schematic diagram of a laser device, which includes a laser source 100 and a modulation module 200. Figure 2 As shown, Figure 2 The diagram shows the structure of the modulation module 200, which includes a phase modulation unit 220, an arbitrary waveform generation unit 240, a filtering unit 260, and an intensity modulation unit 280. The laser source 100 is used to emit a first laser beam.

[0061] The arbitrary waveform generation unit 240 provides a first voltage signal and a second voltage signal, both of which are AC voltage signals. The phase modulation unit 220 is located on the transmission path of the first laser beam. The phase modulation unit 220 can work in conjunction with the first voltage signal to form a second laser beam based on the first laser beam. Specifically, the phase modulation unit 220 can form a second laser beam using the first laser beam based on its own parameters and the first voltage signal provided by the arbitrary waveform generation unit 240. The second laser beam is a composite beam of multiple sub-beams, specifically a composite beam formed by the superposition of infinitely many sub-beams. That is, after the first laser beam emitted by the laser source 100 is modulated by the phase modulation unit 220, it is in a superposition state of infinitely many sub-beams.

[0062] The filtering unit 260 is located on the transmission path of the second laser beam and is used to filter out the m-th order sub-beam in the second laser beam, where m ≥ 1. The m-th order sub-beam can be any one of the infinitely many order sub-beams in the second laser beam. In other words, the filtering unit 260 can filter out any sub-beam in the second laser beam according to requirements to form the target beam. The frequency of the m-th order sub-beam is a first preset value based on the first voltage signal, that is, based on the first voltage signal provided by the arbitrary waveform generation unit 240 to the phase modulation unit 220, the frequency of the m-th order sub-beam is the first preset value. It should be noted that the frequency of the m-th order sub-beam is the first preset value based on the first voltage signal, and the m-th order sub-beam can be any sub-beam in the second laser beam. Therefore, the frequency of each sub-beam in the second laser beam can be determined based on the first voltage signal, and can be controlled based on the first voltage signal. However, it should be noted that the frequencies of each sub-beam in the second laser beam are usually different.

[0063] The intensity modulation unit 280 is located on the transmission path of the m-th order sub-beam, that is, the intensity modulation unit 280 is located on the transmission path of the selected sub-beam. The intensity modulation unit 280, in conjunction with the second voltage signal, forms a target beam based on the m-th order sub-beam. Specifically, the intensity modulation unit 280 can form a target beam based on its own parameters and the second voltage signal provided by the arbitrary waveform generation unit 240. The target beam is a pulse beam, and based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value. In other words, the intensity modulation unit 280, based on its own parameters and the second voltage signal, can form a target pulse beam according to the m-th order sub-beam, and during the formation of the target beam, the waveform and period of the target pulse beam can be controlled according to the second voltage signal.

[0064] When performing quantum state coherent transfer and / or constructing a fast entanglement gate, the aforementioned target beam is transmitted to the target region, such as the ion target region, and acts on the target ions in the target region, thereby performing quantum state coherent transfer and / or constructing a fast entanglement gate.

[0065] It should be noted that the expression for the electric field E of the second laser beam formed after modulation by the phase modulation unit 220 is as follows:

[0066] ;

[0067] in, Let be the amplitude of the electric field of the first laser beam. Integers ranging from negative infinity to positive infinity. express Bessel function of order 1, The amplitude of the AC signal output from the arbitrary waveform generation unit 240 to the phase modulation unit 220 (i.e., the amplitude of the first voltage signal). The half-wave voltage of the phase modulation unit 220, The wave vector of the second laser beam. Indicates optical path length. The frequency of the first laser beam, The frequency of the AC signal output by the arbitrary waveform generation unit 240 (i.e., the frequency of the first voltage signal). Indicates time, Indicates the conjugate part.

[0068] Based on the above formula, the electric field of the m-th order sub-beam can be obtained. The expression is Therefore, the frequency of the m-th order sub-beam mentioned above is Known The frequency of the first voltage signal provided by the arbitrary waveform generation unit 240 to the phase modulation unit 220 is such that, based on the frequency of the first voltage signal, the frequency of the m-th order sub-beam is a first preset value. That is, the frequency of the m-th order sub-beam can be modulated based on the first voltage signal.

[0069] After the above-mentioned m-th order sub-beam is converted into the target beam by the intensity modulation unit 280, the electric field expression of the target beam is as follows:

[0070] ;

[0071] in, The voltage magnitude (i.e., the second voltage signal) output by the arbitrary waveform generation unit 240 to the intensity modulation unit 280. This is the half-wave voltage of the intensity modulation unit 280. The intensity modulation unit 280 can modulate the waveform and frequency of the target beam based on its own parameters and in conjunction with the second voltage signal. Specifically, the amplitude of the first voltage signal output by the arbitrary waveform generation unit 240 is fixed. That is, maintaining the amplitude of the first voltage signal output by the arbitrary waveform generation unit 240. The amplitude of the second voltage signal output by the arbitrary waveform generation unit 240 to the intensity modulation unit 280 remains unchanged. The target beam exhibits periodic changes; that is, a periodic second voltage signal can be applied to the intensity modulation unit 280 by the arbitrary waveform generation unit 240, so that the waveform and period of the target beam can be obtained based on the waveform and period of the second voltage signal. Therefore, the waveform and period of the target beam can be precisely modulated based on the second voltage signal. It should be noted that the frequency of the known m-th order sub-beam can be precisely modulated based on the first voltage signal, and according to the electric field expression of the target beam, the frequency of the target beam is not changed during the process of the intensity modulation unit 280 cooperating with the second voltage signal to form the target beam; that is, the frequency of the target beam remains at the first preset value. In other words, the frequency, waveform, and period of the target beam can be precisely modulated based on the first and second voltage signals, thereby realizing programmable modulation of the frequency, waveform, and period of the target beam.

[0072] As described above, this laser device can achieve programmable modulation of the frequency, waveform, and period of the target beam based on the first and second voltage signals. This means it enables programmable modulation of the beam frequency, waveform, and period used for quantum state coherent transfer and / or constructing a fast entanglement gate. Therefore, by designing a suitable target beam, this laser device can precisely generate the required laser pulses, achieving high fidelity in quantum state coherent transfer and constructing a fast entanglement gate. It can be used to execute different quantum state coherent transfer protocols and applied in various physical scenarios. Furthermore, the programmable modulation of the target beam's frequency, waveform, and period allows the quantum state to undergo target evolution, ultimately achieving a high-fidelity and robust fast entanglement gate.

[0073] Meanwhile, as can be seen from the above, the laser device can achieve tuning of the frequency, period and waveform of the target beam by using the AC voltage signal provided by the phase modulation unit 220 and intensity modulation unit 280 in conjunction with the arbitrary waveform generation unit 240. It does not require a complex additional auxiliary optical path, making it simple to operate and more practical.

[0074] In one embodiment of this application, such as Figure 2As shown, the modulation module 200 also includes a power amplifier, comprising a first-stage power amplifier 320 and a second-stage power amplifier 340, with the intensity modulation unit 280 located between the first-stage power amplifier 320 and the second-stage power amplifier 340. The m-th order sub-beam is amplified by the first-stage power amplifier 320 and then transmitted to the intensity modulation unit 280. The intensity modulation unit 280 forms a target beam based on the m-th order sub-beam amplified by the first-stage power amplifier 320. The target beam is transmitted to the second-stage power amplifier 340, where it is amplified to a third preset value to increase the intensity of the target beam and ensure that the intensity of the target beam meets the requirements.

[0075] In one embodiment of this application, the filtering unit 260 includes a grating filter or a Fabry-Perot cavity filter.

[0076] If the filter unit 260 includes a grating filter, such as Figure 3 As shown, Figure 3 This is a schematic diagram of a grating filter device provided in this application. The grating filter device includes a beam expander 261, a first grating 262, a first reflector 263, a first lens 264, a mask 265, a second lens 266, a second reflector 267, a second grating 268, and a beam reducer 269 arranged sequentially along the transmission direction of the second laser beam. The second laser beam is transmitted sequentially through the beam expander 261, the first grating 262, the first reflector 263, and the first lens 264 to the mask 265. The mask 265 filters out the m-th order sub-beam from the second laser beam, and the m-th order sub-beam is output sequentially through the second lens 266, the second reflector 267, the second grating 268, and the beam reducer 269.

[0077] Specifically, the second laser beam enters the beam expander 261, where its spot size is magnified. It then diffracts on the first grating 262, with different frequency sub-beams exhibiting different diffraction angles. The diffracted second laser beam is reflected by the first mirror 263 and focused by the first lens 264 onto the mask 265. The mask 265 only allows sub-beams of a specific order to pass through, filtering out other orders. For example, the mask 265 allows the m-th order sub-beam to pass through. The filtered m-th order sub-beam then passes sequentially through the second lens 266, the second mirror 267, the second grating 268, and the beam reducer 269. The beam reducer 269 shrinks the spot size as much as possible to its original size before entering the first-stage power amplifier 320.

[0078] If the filtering unit 260 includes a Fabry-Perot cavity filter, the Fabry-Perot cavity filter includes an incident collimating mirror, a Fabry-Perot cavity, and an exit collimating mirror arranged sequentially along the transmission direction of the second laser beam. The Fabry-Perot cavity is composed of a first cavity mirror and a second cavity mirror arranged opposite each other, forming a resonant cavity between the first and second cavity mirrors, and the first cavity mirror and / or the second cavity mirror are partial reflectors. The second laser beam is collimated by the incident collimating mirror and then incident into the Fabry-Perot cavity, filtering out the m-th order sub-beam from the second laser beam. The m-th order sub-beam is then collimated by the exit collimating mirror and output. It should be noted that the first cavity mirror and / or the second cavity mirror are partial reflectors used for multi-beam interference frequency selection of the second laser beam. Specifically, the second laser beam is transmitted to the Fabry-Perot cavity via the incident collimating lens. At this time, only the sub-beams in the second laser beam that satisfy the cavity length resonance condition of the Fabry-Perot cavity can pass through the Fabry-Perot cavity. The remaining sub-beams are reflected or suppressed to achieve filtering, thereby selecting the m-th order sub-beam in the second laser beam.

[0079] In one embodiment of this application, such as Figure 1 As shown, the laser device also includes a wavelength conversion module 400, which is located on the transmission path of the target beam, specifically along the beam transmission direction in the laser device, and is located behind the modulation module 200. Figure 4 As shown, Figure 4 The diagram illustrates the structure of the wavelength conversion module 400. The wavelength conversion module 400 includes a first beam splitter 420 and a frequency doubling crystal 440. The fundamental frequency target beam is transmitted to the first beam splitter 420; a portion is reflected and output by the first beam splitter 420, and a portion is transmitted through the first beam splitter 420 to the frequency doubling crystal 440. The frequency doubling crystal 440 outputs a second-harmonic target beam based on the fundamental frequency target beam transmitted to it. At least one of the fundamental frequency target beam and the second-harmonic target beam serves as the final target beam, used for coherent quantum state transfer and fast entanglement gate construction. It should be noted that, relative to the second-harmonic target beam, the aforementioned fundamental frequency target beam is the undoped initial target beam.

[0080] In one embodiment of this application, such as Figure 4As shown, the wavelength conversion module 400 may further include a second beam splitter 460 and a frequency combiner crystal 480. A second-harmonic target beam is transmitted to the second beam splitter 460, with a portion reflected and output by the second beam splitter 460, and a portion transmitted through the second beam splitter 460 to the frequency combiner crystal 480. The fundamental frequency target beam can also be transmitted through the second beam splitter 460 to the frequency combiner crystal 480. The frequency combiner crystal 480 outputs a third-harmonic target beam based on the fundamental frequency target beam and the second-harmonic target beam transmitted thereon. At least one of the target beam, the second-harmonic target beam, and the third-harmonic target beam serves as the target beam for coherent quantum state transfer and fast entanglement gate construction.

[0081] As described above, the wavelength conversion module 400 can have one, two, or three output windows. If the wavelength conversion module 400 outputs a target beam of fundamental frequency and a target beam of second harmonic frequency, the reflecting end of the first beam splitter 420 and the output end of the frequency doubling crystal are each two output windows. If the wavelength conversion module 400 outputs target beams of fundamental frequency, second harmonic frequency, and third harmonic frequency, then the reflecting end of the first beam splitter 420, the reflecting end of the second beam splitter 460, and the output end of the frequency combining crystal are each three output windows. Specifically, the expression for the electric field of the second harmonic target beam is: The expression for the electric field of the third harmonic target beam is: Therefore, the frequencies of the aforementioned target beams are specifically controlled by adjusting the order of the m-th order sub-beam and / or by adjusting the frequency of the first voltage signal output by the arbitrary waveform generation unit 240. This allows for arbitrary adjustment. Furthermore, the light intensity of each of the aforementioned target beams is proportional to... Therefore, the amplitude of the first voltage signal can be fixed. That is, keeping the amplitude of the first voltage signal output from the arbitrary waveform generation unit 240 to the phase modulation unit 220 unchanged, and making the amplitude of the second voltage signal output from the arbitrary waveform generation unit 240 to the intensity modulation unit 280 unchanged. The periodic variation allows the arbitrary waveform generation unit 240 to apply a periodic AC signal to the intensity modulation unit 280, causing the intensity of each target beam to vary periodically. Based on the above, it can be seen that this laser device can accurately construct pulse beams with the required frequency, waveform, and period, thus accurately constructing target beams that meet the requirements.

[0082] Based on the above, the laser device can output three target beams in three different wavelength bands. The frequency of each target beam can be arbitrarily adjusted by changing the order of the sub-beams allowed to pass through the mask 265 or the frequency of the AC signal output from the arbitrary waveform generator 240 to the phase modulation unit 220. The waveform and period of each target beam can be arbitrarily adjusted by changing the amplitude of the AC signal output from the arbitrary waveform generator 240 to the phase modulation unit 220 and the intensity modulation unit 280. The intensity of each target beam can be adjusted by a power amplifier. This means that the frequency, waveform, single-pulse width, and pulse interval of each target beam can be arbitrarily adjusted, thus enabling programmable control of the desired pulse beam and consequently, programmable adjustment of the target beam.

[0083] For some applications requiring illumination from both sides, i.e., needing two pulsed light beams to simultaneously act on the target ions in the target area, in one embodiment of this application, such as... Figure 5 As shown, Figure 5 The diagram shows the structure of the inversion module 500. The laser device also includes the inversion module 500, which comprises a polarizer 520 and a third reflector 540. The modulation module 200 alternately outputs a first target beam and a second target beam. The first and second target beams are transmitted to the target region and simultaneously act on the target ions in the target region. Specifically, the two pulsed beams act on the target ions in the target region in opposite directions simultaneously. Quantum state coherent transfer and / or the construction of a fast entanglement gate are performed based on the first and second target beams.

[0084] The second target beam is transmitted via polarizer 520 to the third reflector 540, reflected by the third reflector 540, and then transmitted again via polarizer 520 to the target region, acting on the ions in the target region. The third reflector 540 is positioned on a displacement stage 560, which adjusts the position of the third reflector 540 so that the second and first target beams act simultaneously on the target ions in the target region, thereby allowing two pulsed beams to act simultaneously on the target ions in the target region. It should be noted that the parameters of the two pulsed beams are different, such as frequency, intensity, and pulse period.

[0085] Accordingly, this application also provides a processing method applied to the laser device described in any of the above embodiments. The laser device includes a laser source 100 and a modulation module 200. The modulation module 200 includes a phase modulation unit 220, an arbitrary waveform generation unit 240, and a filtering unit 260. This processing method can perform quantum state coherent transfer and fast entanglement gate construction based on the laser device described in any of the above embodiments. Figure 6 As shown, Figure 6 A flowchart of a processing method provided in this application is provided, the processing method including:

[0086] S1: Laser source 100 emits the first laser beam.

[0087] S2: The arbitrary waveform generation unit 240 provides a first voltage signal and a second voltage signal.

[0088] S3: The phase modulation unit 220 is located on the transmission path of the first laser beam. The phase modulation unit 220 can coordinate with the first voltage signal to form a second laser beam based on the first laser beam. That is, the phase modulation unit 220 can form a second laser beam using the first laser beam based on its own parameters and the first voltage signal provided by the arbitrary waveform generation unit 240. The second laser beam is a composite beam of multi-order sub-beams, specifically a composite beam formed by the superposition of infinitely many order sub-beams. That is, after the first laser beam emitted by the laser source 100 is modulated by the phase modulation unit 220, it is in a superposition state of infinitely many order sub-beams.

[0089] S4: The filtering unit 260 is located on the transmission path of the second laser beam and is used to filter out the m-th order sub-beam in the second laser beam, where m ≥ 1, meaning the m-th order sub-beam can be any one of the infinitely many order sub-beams in the second laser beam. The frequency of the m-th order sub-beam is a first preset value based on the first voltage signal, i.e., the first voltage signal provided by the arbitrary waveform generation unit 240 to the phase modulation unit 220. It should be noted that, based on the first voltage signal, the frequency of the m-th order sub-beam is the first preset value, and the m-th order sub-beam is any sub-beam in the second laser beam. Therefore, based on the first voltage signal, the frequency of each sub-beam in the second laser beam can be determined based on the first voltage signal, and thus can be controlled based on the first voltage signal. However, it should be noted that the frequencies of the sub-beams in the second laser beam are usually different due to their different orders.

[0090] S5: The intensity modulation unit 280 is located on the transmission path of the m-th order sub-beam, that is, the intensity modulation unit 280 is located on the transmission path of the selected m-th order sub-beam. The intensity modulation unit 280, in conjunction with the second voltage signal, forms a target beam based on the m-th order sub-beam. In other words, the intensity modulation unit 280 can form a target beam based on the m-th order sub-beam based on its own parameters and the second voltage signal provided by the arbitrary waveform generation unit 240. The target beam is a pulse beam, and based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value. That is, the intensity modulation unit 280, based on its own parameters and the second voltage signal, can form a target pulse beam based on the m-th order sub-beam, and the waveform and period of the target pulse beam can be controlled based on the second voltage signal.

[0091] S6: Based on the target beam transmitted to the target region and acting on the target ions in the target region, perform quantum state coherent transfer and / or construct a fast entanglement gate. It should be noted that the target region can be, for example, an ion target region.

[0092] As described above, this processing method can achieve programmable modulation of the frequency, waveform, and period of the target beam based on the first and second voltage signals. This means it enables programmable modulation of the beam frequency, waveform, and period used for quantum state coherent transfer and / or constructing a fast entanglement gate. Therefore, this laser device can precisely generate the required laser pulses by designing a suitable target beam, achieving high fidelity in quantum state coherent transfer and constructing a fast entanglement gate. It can be used to execute different quantum state coherent transfer protocols and applied in various physical scenarios. Furthermore, this processing method enables programmable modulation of the frequency, waveform, and period of the target beam, allowing the quantum state to complete target evolution and ultimately achieving a high-fidelity and robust fast entanglement gate.

[0093] In one embodiment of this application, determining the frequency of the m-th order sub-beam to a first preset value based on the first voltage signal includes: the frequency of the m-th order sub-beam being the first preset value based on the frequency of the first voltage signal. Determining the waveform of the target beam to be a preset waveform and the pulse period to be a second preset value based on the second voltage signal includes: the waveform of the target beam being the preset waveform based on the waveform of the second voltage signal; and the pulse period of the target beam being the second preset value based on the period of the second voltage signal. It should be noted that the relationship between the first voltage signal and the frequency of the m-th order sub-beam, and the relationship between the second voltage signal and the waveform and period of the target beam, have already been described in detail in the aforementioned laser device section and will not be repeated here.

[0094] In one embodiment of this application, the processing method further includes: based on a power amplifier, the intensity of the target beam is a third preset value. Specifically, based on a first-stage power amplifier, the intensity of the m-th order sub-beam is amplified to a fourth preset value, and the intensity modulation unit forms the target beam based on the m-th order sub-beam with the intensity of the fourth preset value; based on a second-stage power amplifier, the intensity of the target beam is amplified to a third preset value so that the intensity of the target beam meets the requirements.

[0095] This application also provides a quantum device, which includes the laser device described in any of the above embodiments. It should be noted that the laser device has already been described in detail above and will not be repeated here.

[0096] To more clearly illustrate the laser device described in this application, the working process of the laser device will be described in detail below through specific embodiments.

[0097] Example 1

[0098] Applied to Achieving coherent quantum state transfer based on the ARP protocol in an ionic system. Specifically, using... In ion energy levels For qubits , For qubits The corresponding configuration of the laser device can be as follows: An optical path containing an intensity modulation unit 280 is used; the wavelength of the first laser beam output by the laser source 100 is 1108 nm; and the filter unit 260 is adjusted to allow the -3rd order sub-beam to pass through. The phase modulation unit 220 alternately outputs two laser configurations, which can be configured as follows: both have the same intensity and their frequencies satisfy... ,in , which is the energy level difference between two hyperfine levels. Optimization is needed based on experimental conditions. The intensity modulation unit 280 outputs pulsed light from both laser configurations; specifically, the arbitrary waveform generator 240 applies a period of [period missing] to the intensity modulation unit 280. The wavelength conversion module 400 outputs third-harmonic light, converting the laser wavelength of the target beam to 369nm. The target beam enters the ion manipulation region and is incident on the target ions. The target beam is linearly polarized, and its incident direction is the same as the direction of the static magnetic field. In the reversing module 500, the polarizer 520 is a quarter-wave plate, so the polarization direction of the second target beam rotates 90 degrees after reversal. The distance of the third reflector 540 is adjusted to when the frequency is... When the first target beam reaches the target ion, the frequency is The second target beam also reached the target ion precisely. By selecting an appropriate pulse intensity and... This allows quantum states to be in The quantum state coherent transfer under the ARP protocol was successfully executed when the flip occurred via an adiabatic path within a certain time.

[0099] Example 2

[0100] Applied to Coherent quantum state transfer based on the STIRARP protocol is achieved in an ionic system. In ion energy levels For qubits , For qubits The corresponding configuration of the laser device can be as follows: An optical path containing an intensity modulation unit 280 is used; the laser source 100 outputs a laser wavelength of 1108 nm; and the filter unit 260 is adjusted to allow -3rd order light to pass through. The phase modulation unit 220 alternately outputs two laser configurations, specifically, the two lasers have the same waveform and pulse frequencies of [missing information]. , . , It is a constant value and must satisfy the following conditions: ,in , which is the energy level difference between two hyperfine energy levels. The intensity modulation unit 280 outputs laser light in both configurations as pulsed light; specifically, the arbitrary waveform generation unit 240 applies a period of to the intensity modulation unit 280. The wavelength conversion module 400 outputs third-harmonic light, meaning the laser wavelength of the target beam is converted to 369nm. The target beam enters the ion manipulation region and is incident on the target ions. The target beam is linearly polarized, and its incident direction is the same as the direction of the static magnetic field. In the reversing module 500, the polarizer 520 is a quarter-wave plate, so the polarization direction of the second target beam rotates 90 degrees after reversal. The distance of the third reflecting mirror 540 is adjusted so that when the frequency is... When the first target beam reaches the target ion, the frequency is The second target beam also happened to follow The time is reached by the target ion. This is achieved by selecting an appropriate pulse intensity and delay time. This allows quantum states to be in The quantum state flips within a time frame via an adiabatic path, thus successfully executing the coherent quantum state transfer under the STIRARP protocol.

[0101] It should be noted that the laser device can also realize coherent quantum state transfer based on other transfer protocols, such as the AE transfer protocol described in the background section. This application only uses the above embodiments as examples for illustration.

[0102] Example 3

[0103] Applied to A fast entanglement gate based on spin-dependent impulse is constructed in an ion system. The laser device can be configured as described in Example 1, except that the target beam acts on two target ions in the target region. Since the ions acquire an impulse related to their initial spin state during an adiabatic Raman transition, their spin can be coupled to their motion state. By having the modulation module 200 output the two target beam configurations in a specific timing sequence, the motion state of the ions can evolve along a closed path in phase space, ultimately coupling their spin states to construct an entanglement gate between the two ions. The timing sequence of the target beams needs to be optimized based on specific experimental conditions.

[0104] In summary, this application provides a laser device, a processing method, and a quantum device. The laser device includes a laser source and a modulation module. The modulation module includes a phase modulation unit, an arbitrary waveform generation unit, and a filtering unit. The laser source emits a first laser beam, and the arbitrary waveform generation unit provides a first voltage signal and a second voltage signal. The phase modulation unit, in conjunction with the first voltage signal, forms a second laser beam based on the first laser beam. The second laser beam is a composite beam including multiple order sub-beams, specifically a superimposed beam of infinitely many order sub-beams. The filtering unit selects the m-th order sub-beam from the second laser beam. The m-th order sub-beam can be any one of the infinitely many order sub-beams in the second laser beam. Based on the first voltage signal, the frequency of the m-th order sub-beam is a first preset value. The intensity modulation unit, in conjunction with the second voltage signal, forms a target beam based on the m-th order sub-beam. Based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value. This laser device can programmably modulate the frequency, waveform, and period of the target beam based on a first voltage signal and a second voltage signal. This means it enables programmable modulation of the beam frequency, waveform, and period used for quantum state coherent transfer and / or constructing fast entanglement gates. Therefore, by designing a suitable target beam, this laser device can precisely generate the required laser pulses, achieving high fidelity in quantum state coherent transfer and constructing fast entanglement gates. Furthermore, this laser device can tune the frequency, period, and waveform of the target beam using an AC voltage signal provided by a phase modulation unit, an intensity modulation unit, and an arbitrary waveform generation unit. It requires no complex auxiliary optical paths, making it simple to operate and highly practical.

[0105] The various embodiments in this specification are described in a progressive, parallel, or combined manner. Each embodiment focuses on its differences from other embodiments, and similar or identical parts between embodiments can be referred to interchangeably. For the apparatuses disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and relevant parts can be referred to the method section.

[0106] It should be noted that, in the description of this application, the terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a component centrally located at the same time.

[0107] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0108] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A laser device, characterized in that, For quantum state coherent transfer and fast entanglement gate construction, it includes: a laser source and a modulation module, wherein the modulation module includes a phase modulation unit, an arbitrary waveform generation unit, a filtering unit and an intensity modulation unit; The laser source emits a first laser beam; The arbitrary waveform generating unit provides a first voltage signal and a second voltage signal. The phase modulation unit is located on the transmission path of the first laser beam. The phase modulation unit works in conjunction with the first voltage signal to form a second laser beam based on the first laser beam. The second laser beam is a composite beam including multiple sub-beams. The filtering unit is located on the transmission path of the second laser beam, and filters out the m-th order sub-beam in the second laser beam, where m≥1, and the frequency of the m-th order sub-beam is a first preset value based on the first voltage signal; The intensity modulation unit is located on the transmission path of the m-th order sub-beam. The intensity modulation unit, in conjunction with the second voltage signal, forms a target beam based on the m-th order sub-beam. The target beam is a pulse beam, and based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value. The target beam is transmitted to the target region and acts on the target ions in the target region to perform quantum state coherent transfer and / or construct a fast entanglement gate.

2. The laser device according to claim 1, characterized in that, The modulation module further includes a power amplifier, which includes a first-stage power amplifier and a second-stage power amplifier, and the intensity modulation unit is located between the first-stage power amplifier and the second-stage power amplifier; The first-stage power amplifier is located on the transmission path of the m-th sub-beam, and the second-stage power amplifier is located on the transmission path of the target beam. The intensity of the target beam is a third preset value, based on the power amplifier.

3. The laser device according to claim 1, characterized in that, The filtering unit includes a grating filter or a Fabry-Perot cavity filter; The grating filtering device includes a beam expander, a first grating, a first reflector, a first lens, a mask, a second lens, a second grating, and a beam reducer arranged sequentially along the transmission direction of the second laser beam; the second laser beam is transmitted sequentially through the beam expander, the first grating, the first reflector, and the first lens to the mask, and the mask filters out the m-th order sub-beam in the second laser beam; The m-th order sub-beam is output sequentially through the second lens, the second grating, and the beam shrinking mirror; The Fabry-Perot cavity filtering device includes an incident collimator, a Fabry-Perot cavity, and an exit collimator arranged sequentially along the transmission direction of the second laser beam; wherein, the Fabry-Perot cavity is composed of a first cavity mirror and a second cavity mirror arranged opposite to each other, a resonant cavity is formed between the first cavity mirror and the second cavity mirror, and the first cavity mirror and / or the second cavity mirror is a partial reflector; The second laser beam is collimated by the incident collimating lens and then incident into the Fabry-Perot cavity. The m-th order sub-beam in the second laser beam is selected and then collimated by the exit collimating lens before being output.

4. The laser device according to claim 1, characterized in that, The laser device further includes a wavelength conversion module, which is located on the transmission path of the target beam; The wavelength conversion module includes a first beam splitter and a frequency doubling crystal. The target beam with the fundamental frequency passes through the first beam splitter, part of which is reflected and output by the first beam splitter, and part of which is transmitted through the first beam splitter to the frequency doubling crystal. The frequency doubling crystal outputs the target beam with the second harmonic frequency based on the target beam with the fundamental frequency transmitted thereto. The target beam is at least one of the fundamental frequency target beam and the second harmonic target beam, wherein the fundamental frequency target beam is the unharmonicized target beam.

5. The laser device according to claim 4, characterized in that, The wavelength conversion module also includes a second beam splitter and a frequency combining crystal; The target beam of the fundamental frequency and the target beam of the second harmonic are passed through the second beam splitter. Part of the beam is reflected and output by the second beam splitter, and part of the beam is transmitted through the second beam splitter to the frequency combining crystal. The frequency combining crystal outputs the target beam of the third harmonic based on the target beam of the fundamental frequency and the target beam of the second harmonic transmitted thereto. The target beam is at least one of the fundamental frequency target beam, the second harmonic target beam, and the third harmonic target beam.

6. The laser device according to claim 1, characterized in that, The laser device also includes a reversing module, which includes a polarizer and a third mirror, and the target beam includes a first target beam and a second target beam. The modulation module alternately outputs the first target beam and the second target beam. The first target beam and the second target beam are transmitted to the target region and act together on the target ions in the target region. Based on the first target beam and the second target beam, quantum state coherent transfer and / or fast entanglement gate are performed. The second target beam is transmitted to the third reflector via the polarizer, reflected by the third reflector, and then transmitted to the target region via the polarizer to act on the ions in the target region. The third reflector is disposed on a displacement stage, and the displacement stage adjusts the position of the third reflector so that the second target beam and the first target beam act on the target ions in the target region simultaneously.

7. A processing method, characterized in that, This processing method is applied to the laser device for quantum state coherent transfer and fast entanglement gate construction as described in any one of claims 1-6; the processing method includes: The laser source emits a first laser beam; The arbitrary waveform generation unit provides a first voltage signal and a second voltage signal; The phase modulation unit is located on the transmission path of the first laser beam. The phase modulation unit works in conjunction with the first voltage signal to form a second laser beam based on the first laser beam. The second laser beam is a composite beam including multiple sub-beams. The filtering unit is located on the transmission path of the second laser beam, and filters out the m-th order sub-beam in the second laser beam. Based on the first voltage signal, the frequency of the m-th order sub-beam is a first preset value. The intensity modulation unit is located on the transmission path of the m-th order sub-beam. The intensity modulation unit, in conjunction with the two voltage signals, forms a target beam based on the m-th order sub-beam. The target beam is a pulse beam. Based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value. Based on the target beam transmitted to the target region and acting on the target ions in the target region, quantum state coherent transfer and / or construction of fast entanglement gates are performed.

8. The processing method according to claim 7, characterized in that, Based on the first voltage signal, the frequency of the m-th order sub-beam is a first preset value, including: Based on the frequency of the first voltage signal, the frequency of the m-th order sub-beam is the first preset value; Based on the second voltage signal, the waveform of the target beam is a preset waveform, and the pulse period is a second preset value, including: Based on the waveform of the second voltage signal, the waveform of the target beam is the preset waveform; Based on the period of the second voltage signal, the pulse period of the target beam is the second preset value.

9. The processing method according to claim 7, characterized in that, The modulation module further includes a power amplifier, which comprises a first-stage power amplifier and a second-stage power amplifier. The intensity modulation unit is located between the first-stage power amplifier and the second-stage power amplifier. The first-stage power amplifier is located on the transmission path of the m-th order sub-beam, and the second-stage power amplifier is located on the transmission path of the target beam. The processing method further includes: Based on the power amplifier, the intensity of the target beam is a third preset value; Wherein, based on the first-stage power amplifier, the intensity of the m-th order sub-beam is a fourth preset value, and the intensity modulation unit forms the target beam based on the m-th order sub-beam with the intensity of the fourth preset value; Based on the second-stage power amplifier, the intensity of the target beam is the third preset value.

10. A quantum device, characterized in that, Includes the laser device according to any one of claims 1-6.

Images