An edge etching machine and an edge etching process

Abstract

The application provides an edge etching machine and an edge etching process, and relates to the technical field of semiconductor manufacturing. The edge etching machine comprises a machine body, a plurality of etching devices, a plurality of flushing devices and a transfer device which are arranged on the machine body. The transfer device comprises a tool, a mechanical shaft and a wafer driving mechanism. The tool comprises a containing frame and a clamping plate. A plurality of wafers are sequentially stacked in the containing frame along a first center line. Each clamping plate is tightly attached to the periphery or the whole of the non-etching area of the wafers on both sides of the clamping plate. The mechanical shaft is connected between the wafer driving mechanism and the tool. The wafer driving mechanism is used for driving the containing frame to enter and exit each etching device and each flushing device, and is used for driving all the wafers in the containing frame to rotate around the first center line. The edge etching machine has the advantages of high automation, high work efficiency, comprehensive functions, precise control of the etching area, uniform etching and the like.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to an edge etching machine and an edge etching process. BACKGROUND

[0002] In the process of semiconductor manufacturing, a semiconductor wafer needs to go through many procedures to meet the high standards in the semiconductor industry. In the advanced process of semiconductor wafers, the edge of the wafer is required to be uniform, flat, damage-free and smooth. An edge etching machine is a device for automatically etching and cleaning the edge of a wafer.

[0003] Some edge etching machines in the prior art have automatic cleaning function, and some do not have automatic cleaning function. The working principle of the edge etching machine with cleaning function is to use a manipulator with a suction cup to suck the wafer and sequentially transfer the wafer to the etching tank and the cleaning tank. The disadvantage of this edge etching machine is that it can only etch one wafer at a time, and the working efficiency is low. The working principle of the edge etching machine without cleaning function is to arrange multiple wafers in sequence in the etching tank and control the liquid level in the etching tank to a certain height. The edge of the wafer is in contact with the etching liquid by rotating the wafer with a motor. The disadvantage of this edge etching machine is that it cannot realize automatic cleaning function and needs manual transfer of the wafer to the cleaning tank. In addition, both of the above-mentioned edge etching machines have the problem that the etching liquid contacts the non-etching area of the center of the wafer. SUMMARY

[0004] The first object of the present application is to provide an edge etching machine with high working efficiency, precise control of etching area and automatic cleaning function.

[0005] In order to achieve the above-mentioned object, the present application adopts the following technical solutions:

[0006] An edge etching machine, comprising a machine body, a plurality of etching devices for etching the edge of a wafer, a plurality of flushing devices for cleaning the wafer, and a transfer device, which are installed on the machine body.

[0007] The transfer device comprises a tooling, a mechanical shaft and a wafer driving mechanism, wherein:

[0008] The tooling comprises a containing frame and a clamping plate. The containing frame is used to sequentially stack multiple wafers along a first center line. Each clamping plate is tightly fitted with the periphery or the whole of the non-etching area of the wafers adjacent to it.

[0009] The mounting end of the mechanical shaft is in transmission connection with the wafer driving mechanism, and the free end of the mechanical shaft is provided with the tooling.

[0010] The wafer driving mechanism is used to drive the accommodation frame to enter and exit each of the etching devices and enter and exit each of the rinsing devices, and is used to drive all the wafers and all the clamping plates in the accommodation frame to rotate synchronously around the first center line.

[0011] In some embodiments, the number of etching devices is multiple and arranged in sequence along a first horizontal direction, and each etching device uses a different etching liquid to etch the wafer;

[0012] And / or, the number of rinsing devices is multiple and arranged in sequence along a first horizontal direction;

[0013] And / or, a plurality of etching devices and a plurality of rinsing devices are arranged one by one, and a corresponding etching device and a corresponding rinsing device are arranged in sequence along a second horizontal direction;

[0014] Wherein, the first horizontal direction is orthogonal to the second horizontal direction.

[0015] In some embodiments, the wafer driving mechanism comprises:

[0016] A linear driving module is used to drive the mechanical shaft to translate along the first horizontal direction;

[0017] A first rotary driving module is used to drive the mechanical shaft to rotate around its own axis, so as to switch the position of the tool between above a corresponding etching device and a corresponding rinsing device;

[0018] A lifting driving module is used to drive the mechanical shaft to lift and lower;

[0019] A second rotary driving module is used to drive the accommodation frame to rotate around the first center line on the mechanical shaft, or is used to drive two pressing plates in the accommodation frame to rotate around the first center line on the mechanical shaft, and the two pressing plates are used to clamp all the wafers and all the clamping plates.

[0020] In some embodiments, the linear driving module comprises a first driving source and a horizontal sliding seat, the first driving source is used to drive the horizontal sliding seat to slide on the machine body along the first horizontal direction, the mounting end of the mechanical shaft is arranged on the horizontal sliding seat, and the mechanical shaft has a hollow structure with two open ends;

[0021] The second rotation driving module comprises a fourth driving source, a transmission core shaft, an input bevel gear and an output bevel gear. The fourth driving source is arranged on the horizontal sliding seat and is used to drive the transmission core shaft to rotate around its axis. The transmission core shaft is arranged in the mechanical shaft in a penetrating manner. One end of the transmission core shaft is connected to the power output end of the fourth driving source and the other end of the transmission core shaft is sleeved with the input bevel gear. The output bevel gear is in transmission connection with the containing frame or the pressing plate.

[0022] In some embodiments, the tool further comprises a hanging frame fixed on the mechanical shaft, the containing frame is detachably arranged on the hanging frame, two pressing plates are arranged in the containing frame, and all the wafers and all the clamping plates in the containing frame can be clamped between the two pressing plates.

[0023] The output bevel gear is rotatably arranged on the hanging frame, and the output bevel gear is connected to one of the pressing plates.

[0024] In some embodiments, the tool further comprises an adapter shaft and a pressing knob, wherein:

[0025] The adapter shaft is rotatably arranged on one side wall of the containing frame around the first center line. One end of the adapter shaft arranged in the containing frame is connected to one of the pressing plates, and the other end of the adapter shaft arranged outside the containing frame is connected to the output bevel gear.

[0026] The pressing knob is screwed on the other side wall of the containing frame in a penetrating manner. One end of the pressing knob arranged in the containing frame is connected to the other pressing plate.

[0027] In some embodiments, the etching device comprises an etching tank and an etching spraying module for spraying etching liquid into the etching tank; the rinsing device comprises a rinsing tank and a rinsing spraying module for spraying rinsing liquid into the rinsing tank.

[0028] In some embodiments, the etching tank is open at the top and is provided with an etching liquid discharge hole at the bottom. The etching spraying module comprises a first spraying pipe arranged in a ring shape on the etching tank and / or a second spraying pipe arranged in a straight line in the etching tank. A plurality of nozzles are arranged on each spraying pipe in sequence along the extension direction of the spraying pipe.

[0029] In some embodiments, the rinsing tank is open at the top and is provided with a rinsing liquid discharge hole at the bottom. The rinsing spraying module comprises a third spraying pipe arranged in a ring shape on the rinsing tank and / or a fourth spraying pipe arranged in a straight line in the rinsing tank. A plurality of nozzles are arranged on each spraying pipe in sequence along the extension direction of the spraying pipe.

[0030] And / or, the bottom of the cleaning tank is provided with a bubbling pipe for supplying pure nitrogen, and the top of the cleaning tank is provided with a second overflow port, and the second overflow port is provided with a resistivity detector.

[0031] In some embodiments, a megasonic overflow cleaning device is further installed on the machine body, the megasonic overflow cleaning device comprises a double-layer tank, an inner tank of the double-layer tank is used for placing the containing frame loaded with wafers, a layer between the inner tank and the outer tank of the double-layer tank is used for installing a megasonic transducer and providing a water bath, the bottom of the double-layer tank is provided with a second bottom water injection hole, and the top of the double-layer tank is provided with a third overflow port.

[0032] And / or, a drying device is further installed on the machine body, the drying device comprises a drying tank and a heating pipe and / or a nitrogen gas inlet pipe arranged on the drying tank.

[0033] The wafer driving mechanism is further used for driving the containing frame to enter and exit the double-layer tank and / or the drying tank.

[0034] A second object of the present application is to provide an edge corrosion process realized by the above edge corrosion machine, the edge corrosion process comprising the following steps:

[0035] Placing wafers: the containing frame is detached from the mechanical shaft and placed on the operation table, and multiple wafers and multiple clamping plates are alternately placed in the containing frame along the first center line; after all the wafers are placed, each clamping plate is tightly attached to the periphery of the non-corrosion area of the wafers adjacent to the two sides of the clamping plate, and the edge area to be corroded of each wafer is exposed outside;

[0036] Installing wafers: the containing frame loaded with wafers is installed on the free end of the mechanical shaft.

[0037] Corrosion and cleaning: the wafer driving mechanism is controlled to drive the mechanical shaft to move, so that the containing frame enters the first corrosion device to corrode the wafers for the first time, the containing frame enters the first flushing device to flush the wafers for the first time after the first corrosion, the containing frame enters the second corrosion device to corrode the wafers for the second time after the first flushing, the containing frame enters the second flushing device to flush the wafers for the second time after the second corrosion, and so on, until all the corrosion and cleaning processes are completed; during each corrosion process, the wafer driving mechanism is controlled to drive all the wafers and all the clamping plates to rotate synchronously around the first center line.

[0038] The present application has the following beneficial effects:

[0039] The application provides an edge etching machine and an edge etching process realized by the edge etching machine. The edge etching machine comprises a machine body, a plurality of etching devices for etching the edge of a wafer, a plurality of flushing devices for cleaning the wafer and a transfer device, wherein the transfer device comprises a tool, a mechanical shaft and a wafer driving mechanism. The tool comprises a containing frame and a clamping plate. A plurality of wafers are sequentially stacked in the containing frame along a first center line. A clamping plate is clamped between every two adjacent wafers in the containing frame. Each clamping plate is tightly combined with the periphery or the whole of the non-etching area of the wafers on both sides. The mounting end of the mechanical shaft is in driving connection with the wafer driving mechanism. The free end of the mechanical shaft is provided with the tool. The wafer driving mechanism is used for driving the containing frame to enter and exit each etching device and each flushing device, and is used for driving all wafers and all clamping plates in the containing frame to synchronously rotate around the first center line. The edge etching machine has the advantages of high automation, high work efficiency, comprehensive functions, precise control of the etching area, uniform etching and the like. BRIEF DESCRIPTION OF DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the specific embodiments or the prior art, the drawings needed in the specific embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative effort.

[0041] Figure 1 A three-dimensional schematic view of the edge etching machine provided by the embodiment of the application;

[0042] Figure 2 A front view of the edge etching machine provided by the embodiment of the application;

[0043] Figure 3 A local enlarged view of the edge etching machine provided by the embodiment of the application;

[0044] Figure 4 A side view of the edge etching machine provided by the embodiment of the application;

[0045] Figure 5 A sectional view of the transfer device provided by the embodiment of the application;

[0046] Figure 6 A three-dimensional schematic view of the containing frame and parts thereon in the transfer device provided by the embodiment of the application;

[0047] Figure 7 A front view of the containing frame after removing the frame wall thereof; Figure 6

[0048] Figure 8 ​A three-dimensional schematic view of the tooling provided for the embodiments of the present application;

[0049] Figure 9 A cross-sectional view of the tooling provided for the embodiments of the present application;

[0050] Figure 10 A schematic view of the press plate, the clamp plate and the wafer after loading is completed, provided for the embodiments of the present application;

[0051] Figure 11 A three-dimensional schematic view of the containing frame after being placed on the operation table, provided for the embodiments of the present application;

[0052] Figure 12 A partial three-dimensional schematic view of the transfer device, provided for the embodiments of the present application;

[0053] Figure 13 A schematic view from another angle; Figure 12 A schematic view from another angle;

[0054] Figure 14 A cross-sectional view of the etching device provided for the embodiments of the present application;

[0055] Figure 15 A three-dimensional schematic view of the etching device provided for the embodiments of the present application;

[0056] Figure 16 A cross-sectional view of the rinsing device provided for the embodiments of the present application;

[0057] Figure 17 A three-dimensional schematic view of the rinsing device provided for the embodiments of the present application;

[0058] Figure 18 A three-dimensional schematic view of the drying device provided for the embodiments of the present application;

[0059] Figure 19 An internal structure schematic view of the double-layer side wall of the drying tank body provided for the embodiments of the present application.

[0060] Icon:

[0061] 1 - machine body; 11 - driving area; 12 - control area; 121 - control display screen; 13 - working area; 131 - glass door plate; 132 - working platform;

[0062] 2 - etching device; 21 - etching tank body; 211 - etching liquid discharge hole; 212 - first overflow port; 22 - etching spraying module; 221 - first spraying pipe; 222 - second spraying pipe;

[0063] 3 - rinsing device; 31 - cleaning tank body; 311 - cleaning liquid discharge hole; 312 - bubbling pipe support; 313 - second overflow port; 314 - first bottom water injection hole; 32 - quick exhaust cylinder;

[0064] 4-transport device; 41-frock; 411-housing frame; 412-clamping plate; 413-pressing plate; 414-hanging rack; 4141-mounting through hole; 415-adapter shaft; 416-pressing knob; 4161-pressing screw; 4162-hand wheel; 4163-pressing wheel; 42-mechanical shaft; 43-linear drive module; 431-first drive source; 432-horizontal sliding seat; 433-driving gear; 434-first guide assembly; 435-rack; 44-first rotary drive module; 441-second drive source; 442-first belt transmission assembly; 45-lifting drive module; 451-third drive source; 452-lifting sliding seat; 453-screw transmission assembly; 454-second belt transmission assembly; 455-second guide assembly; 46-second rotary drive module; 461-fourth drive source; 462-transmission mandrel; 463-input bevel gear; 464-output bevel gear; 465-input gear; 466-output gear; 467-transition gear; 468-third belt transmission assembly;

[0065] 5-megasonic overflow cleaning device; 51-double-layer tank body;

[0066] 6-drying device; 61-drying tank body; 611-double-layer side wall; 6111-heating cavity; 6112-air inlet cavity; 6113-air inlet hole; 62-heating pipe; 63-nitrogen gas inlet pipe;

[0067] 7-tank cover device; 71-cover plate; 72-cover plate driving mechanism;

[0068] 100-wafer;

[0069] 200-operation table; 210-circular arc groove. DETAILED DESCRIPTION

[0070] The technical solutions of the present application will be described clearly and completely below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the present application.

[0071] It should be noted that in the description of the present application, the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0072] It should be noted that in the description of the present application, the terms "connection" and "installation" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integral connection; it can be directly connected, or connected through an intermediate medium; it can be mechanical connection, or electrical connection. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0073] Some of the existing edge etching machines have automatic cleaning function, but can only etch and clean one wafer at a time, some can etch multiple wafers at a time, but do not have automatic cleaning function, and the existing edge etching machines generally have the problem that the etching liquid contacts the non-etching area of the center of the wafer.

[0074] Based on this, the first aspect embodiment of the present application provides an edge etching machine, referring to Figures 1 to 4 The edge etching machine includes a machine body 1, a plurality of etching devices 2 for etching the edge of a wafer 100, a plurality of flushing devices 3 for cleaning the wafer 100, and a transfer device 4 installed on the machine body 1. As Figure 1 and Figure 2 As shown in the present embodiment, the machine body 1 includes a frame made of a plurality of profiles by welding process and a wall plate covering the four sides of the frame, and each device is installed inside the machine body 1 to realize closed operation and reduce the risk of HF exposure. The number of etching devices 2 can be one or two or more; when the number of etching devices 2 is multiple, each etching device 2 uses different etching liquid to etch the edge of the wafer 100 to meet various etching requirements. The number of flushing devices 3 can also be one or two or more; when the number of flushing devices 3 is multiple, the etching devices 2 and the flushing devices 3 can be one-to-one corresponding and used in pairs, of course, multiple etching devices 2 can also be used with one flushing device 3. As Figure 3As shown, the number of etching devices 2 and rinsing devices 3 in the embodiment is multiple and they are arranged one by one in correspondence, and one etching device 2 and one rinsing device 3 are installed in close proximity to each other, so that the wafer 100 can be cleaned immediately after etching, reducing the time of exposure of the wafer 100 to air.

[0075] With reference to the drawings again, Figure 1 In the embodiment, the machine body 1 is divided into a driving area 11 and a working area 13 from top to bottom, and a control area 12 is arranged on the front side of the connecting position of the driving area 11 and the working area 13, the wafer driving mechanism is mainly installed in the driving area 11, the control display screen 121, various instruments and various control buttons are installed in the control area 12, various etching devices 2 and various rinsing devices 3 are installed in the working area 13, and the upper end of the mechanical shaft 42 is located in the driving area 11 and the lower end is located in the working area 13. Further, an openable and closable window is arranged on the panel of the working area 13, and a glass door panel 131 is arranged on the openable and closable window, so that the working staff can check the working progress of the etching machine through the glass door panel 131, and can also open the openable and closable window to operate the components in the machine body 1.

[0076] With reference to the drawings again, Figure 2 and Figure 3 A working platform 132 is arranged in the working area 13, which divides the internal space of the working area 13 into two parts, and the etching devices 2 and the rinsing devices 3 are installed in the lower space of the working platform 132, and the space above the working platform 132 is used for the movement of the tooling 41 and the mechanical shaft 42, and the working platform 132 is provided with a through hole corresponding to each etching device 2 and each rinsing device 3. Further, the working platform 132 is in a hollow plate structure, so that the liquid dripping on the platform can flow downward through the through holes on the working platform 132.

[0077] As an optional embodiment, the number of etching devices 2 is multiple and they are arranged in sequence along a first horizontal direction, and each etching device 2 uses different etching liquid to etch the edge of the wafer 100; and / or, the number of rinsing devices 3 is multiple and they are arranged in sequence along a first horizontal direction; and / or, a plurality of etching devices 2 and a plurality of rinsing devices 3 are arranged one by one in correspondence, and one etching device 2 and one rinsing device 3 are arranged in sequence along a second horizontal direction; wherein the first horizontal direction is orthogonal to the second horizontal direction.

[0078] As an optional embodiment, Figure 3As shown, in the present embodiment, the number of etching devices 2 and rinsing devices 3 is four respectively and they are arranged one by one, four etching devices 2 and four rinsing devices 3 are arranged from left to right, and a corresponding etching device 2 and a rinsing device 3 are arranged in front and back. In an embodiment, in the direction from left to right, the functions of each etching device 2 are as follows: the first etching device 2, specifically a silicon etching device, is used to remove the silicon body at a high speed to realize the removal of the wafer cutting damage layer; the second etching device 2 uses HF to remove the silicon oxide residue on the wafer surface to eliminate the silicon surface micropores and prepare a clean interface for subsequent metal contamination treatment; the third etching device 2 uses HNO3 to oxidize and dissolve the residual fluorosilicate on the wafer 100 to prevent the crystallization of by-products from contaminating; and the fourth etching device 2 uses HNO3 / NH4F for fine morphology control and passivation, as a buffer oxide etchant, to realize controllable micro-etching, maintain F - stable concentration, precise control of edge corner etching amount, surface passivation (generation of ammonium fluorosilicate layer to inhibit drilling and etching, formation of smooth transition edge), etc. Of course, the etching formula is not limited to the above-mentioned scheme, and can be flexibly switched according to the needs in actual work to adapt to different pollutants such as oxide layer / metal residue, etc.

[0079] Each etching device 2 in the present embodiment is equipped with a circulation, filtration, constant temperature, flow monitoring and concentration monitoring system to cooperatively ensure the precision and stability of the cleaning process, and the specific working principles of each system are as follows:

[0080] Circulation system: the circulation pump is used to drive the solution in the etching device 2 to circulate and flow to ensure the uniform distribution of the chemical active components and avoid cleaning differences caused by local concentration gradient. The fluid flow rate is maintained at >1 m / s during the circulation to control the particle suspension, prevent the secondary deposition of peeled particles, and improve the removal rate of submicron contaminants.

[0081] Filtration system: the 0.05-0.2 μm precision filter is used to intercept pollutants to capture the particles and by-products (such as metal hydroxide) falling off during the etching process, ensure the cleanliness of the liquid, at the same time, prolong the life of the chemical solution, reduce the risk of clogging of the nozzle and sensor by particulate matter, and reduce the equipment maintenance frequency.

[0082] Constant temperature system: the constant temperature machine is used to stabilize the solution temperature at 20℃ (accuracy ±0.5℃); the process is highly sensitive to temperature, the reaction rate may increase by 2-3 times for every 10℃ increase in temperature, constant temperature at 20℃ can avoid reaction runaway, ensure constant etching amount per unit time (such as ±5% deviation), and prevent over-etching or drilling.

[0083] Flow monitoring system: Real-time monitoring of circulation flow (typical value 10-20 L / min) by flow meter to ensure uniform coverage of wafer surface by cleaning.

[0084] Fault warning system: Flow abnormalities (such as pipeline leakage or pump failure) trigger an alarm to prevent cleaning failure due to insufficient flow.

[0085] Concentration monitoring system: Real-time monitoring of chemical concentration in the tank by concentration meter to ensure that the chemical components are always in the optimal ratio range. Once the concentration change is detected, automatic liquid supplement or dilution operation is triggered to maintain the stability of the tank liquid.

[0086] The specific composition of the above-mentioned circulation, filtration, constant temperature, flow monitoring and concentration monitoring systems is prior art and not the innovative structure of the present application. The circulation pump, constant temperature machine, flow meter, concentration meter and the like are common flow control instruments, and therefore are not described in detail.

[0087] Referring to Figure 5 and Figure 6 , the transfer device 4 includes a tooling 41, a mechanical shaft 42, and a wafer driving mechanism, wherein: the tooling 41 includes a containing frame 411 and a clamping plate 412, the containing frame 411 is used to sequentially stack multiple wafers 100 along a first center line, and a clamping plate 412 is clamped between every two adjacent wafers 100 in the containing frame 411, each clamping plate 412 is tightly attached to the periphery or the whole of the non-etching area (generally the middle part of the wafer 100) of the two adjacent wafers 100 on both sides; the mounting end (i.e. the upper end) of the mechanical shaft 42 is in transmission connection with the wafer driving mechanism, and the free end (i.e. the lower end) of the mechanical shaft 42 is provided with the tooling 41; the wafer driving mechanism is used to drive the containing frame 411 to enter and exit each etching device 2 and each flushing device 3, and to drive all wafers 100 and all clamping plates 412 in the containing frame 411 to rotate synchronously around the first center line.

[0088] The edge etching machine has the following advantages: firstly, a plurality of wafers 100 can be etched and cleaned automatically at one time, and the edge etching machine has the advantages of high automation degree, high work efficiency and comprehensive functions compared with the prior art; secondly, the clamping plate 412 is tightly attached to the position 5 mm inside the edge of the wafer 100 (the size can be adjusted according to the actual situation), so that the edge of the wafer 100 to be etched is exposed outside and forms an etching belt, and the clamping plate 412 forms a physical barrier to prevent the etching liquid from flowing to the center area of the wafer 100, which can prevent liquid from penetrating whether it is sprayed or soaked; thirdly, during the etching process, the wafer driving mechanism can drive all wafers 100 and all clamping plates 412 in the containing frame 411 to rotate at a speed of 10-50 rpm (the speed parameter can be adjusted as needed) around the first center line, so that the etching liquid uniformly covers the edge of the wafer; fourthly, the edge etching machine provided by the present application has more comprehensive functions than the existing edge etching machine, and has lower cost, less etching liquid and higher compatibility than the existing full wafer etching process and equipment. The edge etching machine provided by the present application has high compatibility, supports 6-8 inch wafers, and is suitable for silicon-based / compound semiconductor (GaN, SiC) edge processing.

[0089] In the above structure, in each adjacent one of the clamping plates 412 and the wafers 100, the clamping plate 412 can be tightly attached to the periphery of the non-etching area of the wafer 100, or can be tightly attached to the entire non-etching area of the wafer 100, both of which can isolate the non-etching area of the wafer 100 from the etching liquid during the etching process. In this embodiment, the clamping plate 412 includes a clamping plate main body having a diameter equal to that of the wafer 100 to be etched and two sealing rings respectively arranged on the two end faces of the clamping plate main body; after the clamping plate 412 and the wafer 100 are pressed tightly, the outer peripheral surface of the clamping plate main body and the outer peripheral surface of the wafer 100 are on the same cylinder surface, and the sealing rings are tightly attached to the periphery of the non-etching area of the wafer 100, so as to reduce the contact area and the pressure on the wafer 100.

[0090] As an optional embodiment, the material of the clamping plate 412 is fluororubber (resistant to corrosion of various chemical liquids); or the clamping plate main body is made of a corrosion-resistant hard material, and the sealing rings on the two end faces of the clamping plate main body are made of fluororubber material.

[0091] Optionally, the wafer driving mechanism is configured to drive the containing frame 411 to rotate around the first center line on the mechanical shaft 42, thereby driving all wafers 100 in the containing frame 411 to rotate; or the wafer driving mechanism is configured to drive all wafers 100 in the containing frame 411 to rotate around the first center line relative to the containing frame 411.

[0092] In the embodiment, the containing frame 411 is detachably fixed on the free end of the mechanical shaft 42, all the wafers 100 and all the clamping plates 412 can rotate around the first center line in the containing frame 411, and the wafer driving mechanism is configured to drive all the wafers 100 and all the clamping plates 412 in the containing frame 411 to rotate synchronously around the first center line. In other embodiments, the containing frame 411 can be arranged to rotate around the first center line and be fixed on the free end of the mechanical shaft 42, all the wafers 100 and all the clamping plates 412 are fixed in the containing frame 411, and the wafer driving mechanism is configured to drive the containing frame 411 to rotate around the first center line on the mechanical shaft 42. The purpose of the above two technical solutions is to rotate the wafer 100 during etching and cleaning to improve the uniformity of etching and the cleanliness of cleaning. The advantage of the technical solution of the embodiment is that the periphery of the wafer 100 can be exposed outside through the opening of the containing frame 411 during rotation, so that the edge etching zone of the wafer 100 can be more uniformly contacted with the etching liquid.

[0093] With reference to the foregoing Figure 5 and Figure 6 , as an optional embodiment, the tooling 41 further comprises a hanging bracket 414 fixed on the mechanical shaft 42, and the containing frame 411 is detachably arranged on the hanging bracket 414; two pressing plates 413 are arranged in the containing frame 411, and all the wafers 100 and all the clamping plates 412 in the containing frame 411 can be clamped between the two pressing plates 413. In the embodiment, the upper end of the hanging bracket 414 is provided with a mounting through hole 4141 for sleeving on the mechanical shaft 42, and a through hole for penetrating the screw to connect the mechanical shaft 42 is arranged on the hole wall of the mounting through hole 4141, and the hanging bracket 414 is fixed on the mechanical shaft 42 by the screw. The containing frame 411 is detachably fixed on the hanging bracket 414 by screw connection or clamping, and the two pressing plates 413 are rotatably arranged in the containing frame 411 around the first center line.

[0094] The embodiment adopts the following scheme to realize the rotation of the two pressing plates 413: with reference to the foregoing Figures 7 to 10 , the tooling 41 further comprises an adapter shaft 415 and a pressing knob 416. The adapter shaft 415 is rotatably arranged on one side wall of the containing frame 411 around the first center line through a bearing (bearing connection is an optional scheme, and direct plug-in connection can also be adopted), the cross section of one end of the adapter shaft 415 in the containing frame 411 is non-circular (for example, polygonal or special-shaped such as quadrilateral, hexagonal, etc.), and the other end of the adapter shaft 415 outside the containing frame 411 is connected to the wafer driving mechanism; one pressing plate 413 (413a) close to the adapter shaft 415 is rotatably arranged on the containing frame 411 around the first center line through a bearing (bearing connection is an optional scheme, and direct plug-in connection can also be adopted), and the other pressing plate 413 (413b) is rotatably arranged on the containing frame 411 around the first center line through a bearing (bearing connection is an optional scheme, and direct plug-in connection can also be adopted). Figure 7The first positioning slot is adapted to the cross section of the adapter shaft 415 and is used for inserting the adapter shaft 415, and the purpose of the first positioning slot is to make the adapter shaft 415 rotate the pressing plate 413 during rotation. The pressing knob 416 is a through type screw connected to the other side wall of the containing frame 411, and the pressing knob 416 specifically includes a pressing screw 4161, a hand wheel 4162 fixedly connected to the outer end of the pressing screw 4161, and a pressing wheel 4163 rotatably installed on the inner end of the pressing screw 4161 around the first center line, and the second positioning slot is arranged on one of the pressing plates 413 close to the pressing knob 416 for inserting the pressing wheel 4163.

[0095] According to the mechanical transmission principle, when the hand wheel 4162 is screwed, the pressing knob 416 moves in the direction of approaching or moving away from the pressing plate 413, so as to realize clamping and releasing the wafer 100 and the clamping plate 412 between the two clamping plates 412; when all the wafers 100 are tightly clamped between the two pressing plates 413, rotating the adapter shaft 415 will drive the two pressing plates 413 and the wafers 100 and the clamping plates 412 between them to rotate synchronously.

[0096] Referring to Figure 11 , as an optional embodiment, the containing frame 411 is a rectangular structure with openings at the top and bottom (other embodiments can also have only one end opening), and each frame wall of the containing frame 411 is a hollow plate, that is, a plate with through holes. The above arrangement makes the wafers 100 in the containing frame 411 fully contact with the etching liquid and the cleaning liquid during etching and cleaning, and on the other hand, it facilitates the discharge of liquid in the frame and avoids the accumulation of liquid in the frame.

[0097] Continuing to refer to Figure 5 , as an optional embodiment, the wafer driving mechanism includes: a linear driving module 43 for driving the mechanical shaft 42 to translate in the first horizontal direction; a first rotary driving module 44 for driving the mechanical shaft 42 to rotate around its axis to switch the position of the tooling 41 between above the corresponding one etching device 2 and one rinsing device 3; a lifting driving module 45 for driving the mechanical shaft 42 to lift; and a second rotary driving module 46 for driving the containing frame 411 or the two pressing plates 413 in the containing frame 411 to rotate around the first center line on the mechanical shaft 42, and the two pressing plates 413 are used for clamping all the wafers 100 and all the clamping plates 412.

[0098] Referring to Figure 12 and Figure 13 , the structures of the driving modules in the embodiment are as follows:

[0099] The linear driving module 43 comprises a first driving source 431 and a horizontal sliding base 432. The first driving source 431 is configured to drive the horizontal sliding base 432 to slide on the machine body 1 in a first horizontal direction. Specifically, the horizontal sliding base 432 is installed on the machine body 1 through a first guiding assembly 434. The first guiding assembly 434 comprises a first guide rail fixedly installed on the machine body 1 and extending in the first horizontal direction, and a first sliding block slidingly arranged on the first guide rail and fixedly arranged at the bottom of the horizontal sliding base 432. The first driving source 431 is specifically an electric motor. The body of the first driving source 431 is fixedly installed on the horizontal sliding base 432. The output shaft of the first driving source 431 is sleeved with a driving gear 433. A rack 435 is fixedly installed on the machine body 1 and extends in the first horizontal direction. The rack 435 is in meshing connection with the driving gear 433. In the above technical solution, in the process of starting the first driving source 431, the horizontal sliding base 432 and all components arranged thereon are driven to slide on the machine body 1 through the gear and the rack.

[0100] The lifting driving module 45 comprises a third driving source 451 and a lifting sliding base 452. The third driving source 451 is configured to drive the lifting sliding base 452 to lift on the horizontal sliding base 432. The first rotary driving module 44, the second rotary driving module 46 and the mechanical shaft 42 are installed on the lifting sliding base 452. Specifically, the third driving source 451 is an electric motor. The body of the third driving source 451 is fixedly installed on the horizontal sliding base 432. The output shaft of the third driving source 451 is connected to the lifting sliding base 452 through a lead screw transmission assembly 453. That is, the lead screw in the lead screw transmission assembly 453 is connected to the output shaft of the third driving source 451. The nut in the lead screw transmission assembly 453 is fixedly installed on the lifting sliding base 452. Further, in order to limit the movement track of the lifting sliding base 452, a second guiding assembly 455 is connected between the lifting sliding base 452 and the horizontal sliding base 432. In the embodiment, the second guiding assembly 455 is specifically a guide rail and sliding block assembly. Further, the output shaft of the third driving source 451 is connected to the lead screw in the lead screw transmission assembly 453 through a second belt transmission assembly 454. Of course, if the installation space and the speed reduction requirement are not considered, the output shaft of the third driving source 451 can be directly connected to the lead screw in the lead screw transmission assembly 453 through a shaft coupling. The belt transmission assembly comprises an input pulley, an output pulley and a belt connected between the two pulleys. The input pulley is sleeved on the output shaft of the electric motor. The output pulley is sleeved on the component to be driven.

[0101] The first rotary driving module 44 comprises a second driving source 441 and a first belt transmission assembly 442. The second driving source 441 is specifically an electric motor. The body of the second driving source 441 is fixedly installed on the lifting sliding base 452. The output shaft of the second driving source 441 is connected to the mechanical shaft 42 through the first belt transmission assembly 442.

[0102] In combination Figure 9 and Figure 12The second rotary driving module 46 comprises a fourth driving source 461, a transmission mandrel 462, an input bevel gear 463 and an output bevel gear 464. The fourth driving source 461 is arranged on the horizontal sliding seat 432 and used to drive the transmission mandrel 462 to rotate around its axis. The mechanical shaft 42 has a hollow structure with two open ends. The transmission mandrel 462 is arranged in the interior of the mechanical shaft 42 in a penetrating manner. One end of the transmission mandrel 462 is connected to the power output end of the fourth driving source 461, and the other end of the transmission mandrel 462 is sleeved with the input bevel gear 463. The output bevel gear 464 is in driving connection with the containing frame 411 or the pressing plate 413. Specifically, the transmission mandrel 462 is coaxially sleeved with the mechanical shaft 42 and connected through a bearing. The fourth driving source 461 is specifically a motor. The body of the fourth driving source 461 is fixedly installed on the lifting sliding seat 452. The output shaft of the fourth driving source 461 is connected to the upper end of the transmission mandrel 462 through the third belt driving assembly 468.

[0103] Further, referring to Figure 9 In the embodiment, the second rotary driving module 46 further comprises an input gear 465 and an output gear 466 rotatably installed on the suspension frame 414. The input gear 465 is coaxially and fixedly installed with the output bevel gear 464. The input gear 465 and the output gear 466 can be directly meshed and connected or indirectly connected through one or more transition gears 467. The output gear 466 and the containing frame 411 are respectively installed on two opposite installation surfaces of the suspension frame 414. The cross section of one end of the adapter shaft 415 penetrating the containing frame 411 is non-circular (for example, polygonal or special-shaped such as quadrilateral, hexagonal, etc.). The output gear 466 is provided with a third positioning slot matching the aforementioned cross section and used for inserting the adapter shaft 415. After the containing frame 411 is fixedly installed on the suspension frame 414, the outer end of the adapter shaft 415 penetrates the suspension frame 414 and is inserted into the third positioning slot of the output gear 466. The purpose of such arrangement is to drive the adapter shaft 415 to rotate simultaneously with the output gear 466 in the process of rotation, thereby driving the two pressing plates 413, all the wafers 100 and all the clamping plates 412 to rotate synchronously.

[0104] Referring to Figure 14 and Figure 15 The etching device 2 comprises an etching tank 21 and an etching spraying module 22 used for spraying etching liquid into the etching tank 21. Referring to Figure 16The rinsing device 3 comprises a cleaning tank 31 and a cleaning spray module for spraying cleaning liquid into the cleaning tank 31. The tank in the present application is made of corrosion-resistant material (for example, NPP / PFA / PVDF / quartz). In the corresponding corrosion device 2 and rinsing device 3, the corrosion tank 21 and the cleaning tank 31 are distributed side by side in the second horizontal direction. When the containing frame 411 on the mechanical shaft 42 is located directly above a corrosion tank 21, the control mechanical shaft 42 is rotated by 180° around the axis, and the containing frame 411 is rotated to be directly above the cleaning tank 31 corresponding to the corrosion tank 21.

[0105] Referring to Figure 15 As an optional embodiment, the top of the corrosion tank 21 is opened for the tooling 41 to enter and exit; the bottom of the corrosion tank 21 is provided with a corrosion liquid drainage hole 211; the corrosion spray module 22 comprises a first spray pipe 221 arranged in a ring shape on the corrosion tank 21 and / or a second spray pipe 222 arranged in a straight line in the corrosion tank 21, and each spray pipe is provided with a plurality of nozzles arranged in sequence along the extension direction thereof.

[0106] In the present embodiment, the first spray pipe 221 is mounted on the top periphery of the corrosion tank 21, and the first spray pipe 221 is provided with a plurality of nozzles arranged in a ring array; the first spray pipe 221 can be additionally arranged in the corrosion tank 21 as needed. The second spray pipe 222 is arranged at each of the four corners in the corrosion tank 21, and the second spray pipe 222 is provided with a plurality of nozzles arranged in a vertical array. Through the above arrangement, the spraying range fully covers the surface of the corrosion area, avoiding the corrosion blind area. In the corrosion work, through the multi-angle spraying combined with the rotation of the wafer 100, the uniform distribution of the solution is ensured, and the cleaning difference between the chips is significantly reduced. In one embodiment of the present embodiment, the corrosion liquid flow is accurately controlled at 0.2-0.5 L / min, and the drop uniformity error is controlled at <5%.

[0107] As an optional embodiment, the top of the corrosion tank 21 is provided with a first overflow port 212, so that the corrosion liquid can flow in a circulating manner. In the present embodiment, the outer end surface of the tank opening of the corrosion tank 21 is in a sawtooth structure, and a first overflow port 212 is formed between two adjacent teeth. Compared with the conventional through-hole overflow port, the sawtooth overflow port in the present embodiment can make the liquid in the tank periphery flow out uniformly.

[0108] Referring to Figure 16As an optional embodiment, the top of the cleaning tank 31 is provided with an opening for the tool 41 to enter and exit; the bottom of the cleaning tank 31 is provided with a cleaning liquid discharge hole 311, and the cleaning spray module includes a third spray pipe arranged in a ring shape on the cleaning tank 31 and / or a fourth spray pipe arranged in a straight line in the cleaning tank 31, and each spray pipe is provided with a plurality of nozzles arranged in sequence along the extension direction of the spray pipe.

[0109] In the embodiment, the flushing device 3 is a QDR flushing device (Quick Dump Rinser), which can quickly remove the chemical liquid and particulate impurities remaining on the surface of the wafer 100, and ensure the cleanliness of the wafer. The cleaning tank 31 is welded by NPP plate and has acid and alkali corrosion resistance. During the cleaning process, the spray range of the plurality of spray pipes can cover all areas in the tank, and there is no dead angle. Further, the fast discharge cylinder 32 is installed at the cleaning liquid discharge hole 311 of the cleaning tank 31, so as to realize the rapid discharge of the liquid in the tank (completed in seconds), and the high-speed water flow is used to carry away the particulate and residual liquid.

[0110] As an optional embodiment, the top of the cleaning tank 31 is provided with a second overflow port 313, and the bottom is provided with a first bottom water inlet hole 314. During the cleaning process, deionized water is injected into the cleaning tank 31 through the spray pipe and the bottom water inlet hole at the same time, so as to fill the cleaning tank 31 in a very short time (usually <10 seconds), reduce the oxidation layer growth caused by the exposure of the wafer to air, and at the same time, the injected deionized water is continuously updated in the gap of the tank with the overflow. Further, the resistivity detector can be arranged at the second overflow port 313, so as to monitor the water quality in real time and ensure the purity of the flushing. Usually, the water injection-drainage process is repeated 3-4 times (the number of times is adjusted according to the situation) each time, so as to completely remove the residual substances.

[0111] As an optional embodiment, the outer end face of the slot of the cleaning tank 31 is a sawtooth structure, and a second overflow port 313 is formed between two adjacent teeth.

[0112] Referring to Figure 17 As an optional embodiment, the bottom of the cleaning tank 31 is provided with a bubbling pipe (not shown in the figure) for introducing pure nitrogen, and the bubbling pipe is installed in the cleaning tank 31 through the bubbling pipe support 312. During the cleaning process, the pure nitrogen is input into the bottom of the cleaning tank 31 through the bubbling pipe, so as to enhance the water flow flushing force, reduce the oxygen content in the water, prevent the wafer from being oxidized, reduce the deposition of pollutants, and at the same time, the nitrogen bubbling makes the wafer vibrate slightly, which is beneficial to the stripping of the attached pollutants.

[0113] Continuing to refer to Figure 2 and Figure 3As an optional embodiment, the edge etching machine further comprises a plurality of tank cover devices 7, which are arranged at the periphery of the plurality of etching devices 2 one by one. The tank cover device 7 comprises a cover plate 71 and a cover plate driving mechanism 72, wherein the cover plate 71 can cover the top opening of the corresponding etching tank body 21, and the cover plate driving mechanism 72 is used to drive the cover plate 71 to move to open or close the top opening of the etching tank body 21. In this embodiment, one side of the cover plate 71 is rotatably mounted on the working platform 132 of the machine body 1, and the cover plate driving mechanism 72 drives the cover plate 71 to rotate through a motor or a cylinder to open or close the top opening of the etching tank body 21. When the wafer 100 is in the etching process in one of the etching tank bodies 21, the corresponding cover plate 71 can cover the top opening of the etching tank body 21, thereby preventing the etching liquid from splashing outward to a certain extent. It should be noted that during the etching process, only the accommodation frame 411 in the tooling 41 is located in the tank body, and the upper end of the suspension bracket 414 needs to pass out of the tank body and be connected with the mechanical shaft 42, so that the gap for avoiding the suspension bracket 414 needs to be left between the cover plate 71 and the top opening of the etching tank body 21.

[0114] In other embodiments, the tank cover device 7 can also be arranged at the periphery of each rinsing device 3 to open or close the top opening of the cleaning tank body 31.

[0115] Continuing to refer to Figure 2 As an optional embodiment, the edge etching machine further comprises a megasonic overflow cleaning device 5 arranged on the machine body 1, which is a device for submicron cleaning of objects based on the high-frequency vibration effect of megasonic waves and the auxiliary action of the overflow system, and is used for high-precision particle removal and surface purification of the wafer 100 in the edge etching machine.

[0116] In this embodiment, the megasonic overflow cleaning device 5 comprises a double-layer tank body 51, and the wafer driving mechanism is further used to drive the accommodation frame 411 to enter and exit the double-layer tank body 51. Specifically, the megasonic overflow cleaning device 5 is arranged at one end of all the rinsing devices 3 along the first horizontal direction, that is, each cleaning tank body 31 and the double-layer tank body 51 are distributed side by side along the first horizontal direction. Of course, in other embodiments, the megasonic overflow cleaning device 5 can also be arranged at one end of all the etching devices 2 along the first horizontal direction, that is, each etching tank body 21 and the double-layer tank body 51 are distributed side by side along the first horizontal direction.

[0117] As an optional embodiment, the inner tank (specifically made of quartz) of the double-layer tank 51 is used to place the containing frame 411 containing the wafer 100, the bottom of the double-layer tank 51 is provided with a second bottom water injection hole, and the top is provided with a third overflow port; the interlayer between the inner tank and the outer tank of the double-layer tank 51 is used to install the megasonic transducer and provide a water bath. As an optional embodiment, the outer end surface of the inner tank of the double-layer tank 51 at the tank opening is a sawtooth structure, and a third overflow port is formed between two adjacent teeth.

[0118] Compared with the conventional megasonic overflow cleaning machine, the megasonic overflow cleaning device 5 provided in the embodiment can isolate the chemical corrosion of the megasonic transducer by improving the tank into a double-layer structure. In other embodiments, the megasonic overflow cleaning device 5 can also be a conventional single-layer tank.

[0119] As an optional embodiment, the bottom surface of the inner tank of the double-layer tank 51 is inclined. For example, the bottom surface of the inner tank of the double-layer tank 51 is an inclined surface with an angle of 2° with the horizontal plane. The above-mentioned setting can accelerate the separation of bubbles from the tank wall and reduce the loss of megasonic energy.

[0120] In one embodiment of the present embodiment, during the cleaning process, ultrapure water is injected from the bottom of the double-layer tank 51 at a flow rate of 10-20 L / min and overflowed from the top, ensuring that the water flow is uniformly replaced from bottom to top, and the contaminants are discharged with the overflow water, and the liquid level is updated in real time; at the same time, a megasonic transducer with a working frequency of 950 kHz and a power adjustable range of 100-800 W is used, the megasonic wave is transmitted to the inner tank through the water coupling between the interlayers, and the 0.1-0.2 μm particles are stripped by the fluid shear force, which avoids both the damage to the wafer surface and the corrosion risk of the transducer directly contacting the corrosive liquid. In addition, a resistivity detector can be arranged at the third overflow port, so that the resistivity is maintained in the range of ≥18 MΩ.

[0121] As an optional embodiment, referring to Figure 18 , the edge etching machine further comprises a drying device 6 arranged on the machine body 1, the drying device 6 comprises a drying tank 61, the drying tank 61 is provided with a heating pipe 62 and / or a nitrogen gas inlet pipe 63, and the wafer driving mechanism is further used to drive the containing frame 411 to enter and exit the drying tank 61.

[0122] In the present embodiment, the megasonic overflow cleaning device 5 and the drying device 6 are distributed side by side along the second horizontal direction, i.e., the double-layered tank body 51 and the drying tank body 61 are distributed in front of and behind each other. In some embodiments, the cleaning tank bodies 31 and the double-layered tank body 51 are distributed side by side along the first horizontal direction, and the etching tank bodies 21 and the drying tank body 61 are distributed side by side along the first horizontal direction. In other embodiments, the cleaning tank bodies 31 and the drying tank body 61 are distributed side by side along the first horizontal direction, and the etching tank bodies 21 and the double-layered tank body 51 are distributed side by side along the first horizontal direction. When the accommodating frame 411 on the mechanical shaft 42 is located directly above the double-layered tank body 51, the control mechanical shaft 42 is rotated by 180° about the axis, and then the accommodating frame 411 is rotated to be directly above the drying tank body 61. Although Figures 1 to 3 The structure of the drying device 6 is not shown, however, according to the foregoing description and the mounting manner of the corresponding etching device 2 and the flushing device 3, those skilled in the art can understand the position structure of the drying device 6 after being mounted on the machine body 1.

[0123] In the present embodiment, three quartz infrared type heating pipes 62 are arranged on the two side wall plates of the drying tank body 61 in the vertical direction, so that the wafers 100 in the tank are uniformly heated. A nitrogen gas inlet pipe 63 is arranged at the bottom of each of the two side wall plates of the drying tank body 61. During the drying process, dry nitrogen gas is delivered into the tank through the nitrogen gas inlet pipe 63, and the heating pipes 62 heat the wafers 100 in the tank, so that the moisture in the tank is quickly removed, and the nitrogen gas mixed with the moisture is discharged from the top opening of the drying tank body 61, thereby ensuring the cleanliness of the wafers, avoiding defects on the surface of the wafers, and preventing the wafers from being marked or stained due to the adhesion of moisture.

[0124] Referring to Figure 19 As an optional embodiment, in order to avoid the heating pipes 62 from contacting the residual etching liquid, the drying tank body 61 includes two double-layered side walls 611, and a plurality of (three in the present embodiment) heating pipes 62 are arranged in the interlayer of each double-layered side wall 611. Further, the interlayer of the double-layered side wall 611 is divided into a heating cavity 6111 and an inlet cavity 6112 by a partition plate, wherein the heating pipes 62 are arranged in the heating cavity 6111, and a plurality of gas inlet holes 6113 are arranged on the inner cavity wall of the inlet cavity 6112, and a through hole is arranged on the outer cavity wall of the inlet cavity 6112 and communicates with the outlet of the nitrogen gas inlet pipe 63. The nitrogen gas inlet pipe 63 can deliver gas into the inlet cavity 6112, and the gas in the inlet cavity 6112 can enter the drying tank body 61 through the plurality of gas inlet holes 6113.

[0125] The second aspect embodiment of the present application provides an edge etching process realized by using the above-described edge etching machine, and the process includes the following steps:

[0126] S1, placing wafers: referring toFigure 10 and Figure 11 The containing frame 411 is detached from the mechanical shaft 42 and placed on the operation table 200, and multiple wafers 100 and multiple clamping plates 412 are alternately placed in the containing frame 411 along the first center line; after all the wafers 100 are placed, each clamping plate 412 is tightly attached to the periphery of the non-etching area of the two adjacent wafers 100, and the edge area to be etched of each wafer 100 is exposed.

[0127] Further, the top of the operation table 200 is provided with a circular arc groove 210, the circular arc groove 210, the clamping plate body, and the pressing plate 413 are all equal to the diameter of the wafer 100 to be etched. After the containing frame 411 is placed on the operation table 200, the circular arc groove 210 is located at the bottom of the containing frame 411, the center line of the circular arc groove 210 is collinear with the axis of the adapter shaft 415 and the axis of the pressing knob 416 and coincides with the first center line, so that the wafer 100 to be etched and the clamping plate 412 can be supported and positioned, and it is ensured that the center line of the wafer 100 and the center line of the clamping plate 412 are coincident with the first center line. The outer diameter of the circular arc groove 210, the clamping plate 412, and the pressing plate 413 can be adjusted according to the outer diameter size of the wafer 100 to be etched.

[0128] The step of placing the wafer specifically includes: S1.1, placing the containing frame 411 on the operation table 200, at this time, the center line of the circular arc groove 210, the axis of the adapter shaft 415, and the axis of the pressing knob 416 are collinear; S1.2, placing the front pressing plate 413 (the front end refers to the end close to the adapter shaft 415) on the circular arc groove 210, and inserting the adapter shaft 415 into the first positioning groove on the front pressing plate 413; S1.3, alternately placing multiple wafers 100 and multiple clamping plates 412 on the circular arc groove 210, after all the wafers 100 are placed, placing the rear pressing plate 413 on the circular arc groove 210; S1.4, screwing the pressing knob 416, inserting the pressing wheel 4163 on the pressing knob 416 into the second positioning groove on the rear pressing plate 413, and clamping all the wafers 100 and all the clamping plates 412 between the two pressing plates 413, and then the next step can be performed.

[0129] S2, installing the wafer: installing the containing frame 411 with the wafer 100 on the free end of the mechanical shaft 42. Specifically, the containing frame 411 with the wafer 100 is fixedly installed on the hanging bracket 414 by screwing or clamping, etc., after the installation is completed, referring to Figure 9 , the outer end of the adapter shaft 415 penetrates through the hanging bracket 414 and is inserted into the third positioning groove on the output gear 466, so that the adapter shaft 415 and the output gear 466 can rotate synchronously.

[0130] S3, etching and cleaning: the wafer driving mechanism drives the mechanical shaft 42 to move, so that the containing frame 411 enters the first etching device 2 to etch the wafer 100, and then enters the first flushing device 3 to flush the wafer 100, and then enters the second etching device 2 to etch the wafer 100, and then enters the second flushing device 3 to flush the wafer 100, and so on, until the etching and cleaning process is completed; during each etching process, the wafer driving mechanism drives all the wafers 100 and all the clamping plates 412 to rotate synchronously around the first center line.

[0131] The etching and cleaning process specifically includes: S3.1, the wafer driving mechanism drives the mechanical shaft 42 and the tooling 41 thereon to move to a position where the tooling 41 is directly above the first etching tank 21; S3.2, the lifting driving module 45 drives the mechanical shaft 42 and the tooling 41 thereon to descend, so that the containing frame 411 enters the first etching tank 21; S3.3, the etching spraying module 22 sprays etching liquid into the etching tank 21, and at the same time, the second rotary driving module 46 drives the two pressing plates 413, all the wafers 100 and all the clamping plates 412 to rotate synchronously around the first center line; S3.4, the lifting driving module 45 drives the mechanical shaft 42 and the tooling 41 thereon to ascend to a position where the tooling 41 is directly above the first etching tank 21, and then the first rotary driving module 44 drives the mechanical shaft 42 to rotate by 180°, so that the tooling 41 rotates to a position directly above the first flushing tank 31, and then the lifting driving module 45 drives the mechanical shaft 42 and the tooling 41 thereon to descend, so that the containing frame 411 enters the first flushing tank 31; S3.5, the flushing spraying module sprays flushing liquid into the flushing tank 31, and at the same time, the second rotary driving module 46 drives the two pressing plates 413, all the wafers 100 and all the clamping plates 412 to rotate synchronously around the first center line; S3.6, the wafer driving mechanism drives the mechanical shaft 42 and the tooling 41 thereon to move to a position where the tooling 41 is directly above the second etching tank 21, and then the steps S3.2-3.5 are repeated. The above steps are repeated until the etching and cleaning process is completed.

[0132] Optionally, the edge etching process further includes:

[0133] S4, megasonic overflow cleaning: after the etching process is completed, the wafer driving mechanism drives the mechanical shaft 42 and the tooling 41 thereon to move into the double-layer tank 51 to perform megasonic overflow cleaning;

[0134] S5, drying: after the foregoing steps are completed, the wafer driving mechanism drives the mechanical shaft 42 and the tooling 41 thereon to move into the drying tank 61 to perform drying.

[0135] In summary, the edge etching machine and the edge etching process provided by the embodiments can realize an integrated process of etching-cleaning-drying, and a single device can complete the whole process of edge processing, and has a high degree of automation. Moreover, through improvement of the wafer tool, the non-etching area of the wafer 100 is physically isolated, and no matter the etching mode is spraying or immersion, the liquid can be prevented from penetrating into the non-etching area of the wafer 100, and the consumption of chemical etching products is greatly reduced. In addition, the tool 41 structure in the embodiments can control the rotation of the wafer 100 during etching and cleaning, so that the etching liquid and the cleaning liquid can uniformly cover the edge of the wafer 100.

[0136] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An edge erosion machine characterized by, The utility model relates to a wafer etching and cleaning device, which comprises a machine body (1), a plurality of etching devices (2) for etching the edge of a wafer (100) arranged on the machine body (1), a plurality of flushing devices (3) for cleaning the wafer (100), and a transfer device (4); The transfer device (4) comprises a tooling (41), a mechanical shaft (42), and a wafer driving mechanism, wherein: The tooling (41) comprises a containing frame (411), a clamping plate (412), and two pressing plates (413), the containing frame (411) is used for sequentially stacking a plurality of wafers (100) along a first center line, each adjacent two wafers (100) in the containing frame (411) is clamped with a clamping plate (412), each clamping plate (412) is tightly attached to the periphery or the whole of the non-etching area of the wafers (100) adjacent to its two sides, and two pressing plates (413) are used for clamping all the wafers (100) and all the clamping plates (412) in the containing frame (411); The mounting end of the mechanical shaft (42) is in transmission connection with the wafer driving mechanism, and the free end of the mechanical shaft (42) is arranged with the tooling (41); The wafer driving mechanism is used for driving the containing frame (411) to enter and exit each etching device (2) and each flushing device (3), and is used for driving all the wafers (100) and all the clamping plates (412) in the containing frame (411) to synchronously rotate around the first center line; A plurality of etching devices (2) and a plurality of flushing devices (3) are arranged one by one in correspondence, and a corresponding etching device (2) and a flushing device (3) are arranged in sequence along a second horizontal direction; The wafer driving mechanism comprises: A linear driving module (43) is used for driving the mechanical shaft (42) to translate along a first horizontal direction, and the first horizontal direction is orthogonal to the second horizontal direction; A first rotary driving module (44) is used for driving the mechanical shaft (42) to rotate around its axis, so that the position of the tooling (41) is switched between above a corresponding etching device (2) and a flushing device (3); A lifting driving module (45) is used for driving the mechanical shaft (42) to lift and lower; A second rotary driving module (46) is used for driving the containing frame (411) to rotate around the first center line on the mechanical shaft (42), and is used for driving the two pressing plates (413) to rotate around the first center line on the mechanical shaft (42).

2. The edge erosion machine of claim 1, wherein, The number of etching devices (2) is multiple, and the etching devices (2) are arranged in sequence along the first horizontal direction, each etching device (2) uses different etching liquid to etch the wafer (100); And / or, the number of flushing devices (3) is multiple, and the flushing devices (3) are arranged in sequence along the first horizontal direction.

3. The edge erosion machine of claim 2, wherein, The linear driving module (43) comprises a first driving source (431) and a horizontal sliding seat (432), the first driving source (431) is used for driving the horizontal sliding seat (432) to slide on the machine body (1) in the first horizontal direction, and the mounting end of the mechanical shaft (42) is arranged on the horizontal sliding seat (432), and the mechanical shaft (42) has a hollow structure with two open ends; The second rotary driving module (46) comprises a fourth driving source (461), a transmission mandrel (462), an input bevel gear (463) and an output bevel gear (464), wherein: the fourth driving source (461) is arranged on the horizontal sliding seat (432) and is used for driving the transmission mandrel (462) to rotate around the axis line thereof, the transmission mandrel (462) is arranged in the interior of the mechanical shaft (42) in a penetrating mode, one end of the transmission mandrel (462) is connected to the power output end of the fourth driving source (461), and the other end of the transmission mandrel (462) is sleeved with the input bevel gear (463), and the output bevel gear (464) is in transmission connection with the containing frame (411) or the pressing plate (413).

4. The edge erosion machine of claim 3, wherein, The tooling (41) further comprises a suspension frame (414) fixed to the mechanical shaft (42), the containing frame (411) is detachably arranged on the suspension frame (414), two pressing plates (413) are arranged in the containing frame (411), and all the wafers (100) and all the clamping plates (412) in the containing frame (411) can be clamped between the two pressing plates (413); The output bevel gear (464) is rotatably arranged on the suspension frame (414), and the output bevel gear (464) is connected to one of the pressing plates (413).

5. The edge erosion machine of claim 4, wherein, The tooling (41) further comprises an adapter shaft (415) and a pressing knob (416), wherein: The adapter shaft (415) is rotatably arranged on one side wall of the containing frame (411) around the first center line, one end of the adapter shaft (415) in the containing frame (411) is connected to one of the pressing plates (413), and the other end of the adapter shaft (415) outside the containing frame (411) is connected to the output bevel gear (464); The pressing knob (416) is arranged on the other side wall of the containing frame (411) in a penetrating mode, one end of the pressing knob (416) in the containing frame (411) is connected to the other pressing plate (413).

6. The edge erosion machine of claim 1, wherein, The etching device (2) comprises an etching tank (21) and an etching spraying module (22) for spraying etching liquid into the etching tank (21); and the washing device (3) comprises a washing tank (31) and a washing spraying module for spraying washing liquid into the washing tank (31).

7. The edge erosion machine of claim 6, wherein, The top of the etching tank body (21) is open, and a bottom of the etching tank body (21) is provided with an etching liquid discharge hole (211). The etching spray module (22) comprises a first spray pipe (221) arranged in a ring shape on the etching tank body (21) and / or a second spray pipe (222) arranged in a straight line in the etching tank body (21). A plurality of nozzles are arranged on each spray pipe in sequence along the extension direction of the spray pipe. And / or, the top of the cleaning tank body (31) is open, and a bottom of the cleaning tank body (31) is provided with a cleaning liquid discharge hole (311). The cleaning spray module comprises a third spray pipe arranged in a ring shape on the cleaning tank body (31) and / or a fourth spray pipe arranged in a straight line in the cleaning tank body (31). A plurality of nozzles are arranged on each spray pipe in sequence along the extension direction of the spray pipe. And / or, the bottom of the cleaning tank body (31) is provided with a bubbling pipe for supplying pure nitrogen gas. The top of the cleaning tank body (31) is provided with a second overflow port (313). The resistivity detector is arranged at the second overflow port (313).

8. The edge erosion machine of claim 1, wherein, The ultrasonic overflow cleaning device (5) arranged on the machine body (1) comprises a double-layer tank body (51). The inner tank of the double-layer tank body (51) is used for placing the containing frame (411) containing the wafer (100). The interlayer between the inner tank and the outer tank of the double-layer tank body (51) is used for mounting an ultrasonic transducer and providing a water bath. The bottom of the double-layer tank body (51) is provided with a second bottom water injection hole, and the top of the double-layer tank body (51) is provided with a third overflow port. And / or, the drying device (6) arranged on the machine body (1) comprises a drying tank body (61) and a heating pipe (62) and / or a nitrogen gas inlet pipe (63) arranged on the drying tank body (61). The wafer driving mechanism is also used to drive the containing frame (411) to enter and exit the double-layer tank body (51) and / or the drying tank body (61).

9. An edge etching process using the edge etching machine according to any one of claims 1 to 8, characterized in that, The method comprises the following steps: Placing the wafer: the containing frame (411) is detached from the mechanical shaft (42) and placed on the operation table (200). A plurality of wafers (100) and a plurality of clamping plates (412) are alternately placed in the containing frame (411) along the first center line. After all the wafers (100) are placed, each clamping plate (412) is tightly attached to the periphery of the non-etching area of the wafers (100) adjacent to the two sides thereof, and the edge area to be etched of each wafer (100) is exposed to the outside. Installing the wafer: the containing frame (411) containing the wafer (100) is installed on the free end of the mechanical shaft (42). Corrosion and cleaning: control the wafer drive mechanism to drive the mechanical shaft (42) to move, so that the containing frame (411) enters the first etching device (2) to etch the wafer (100) for the first time, after the first etching, the containing frame (411) enters the first washing device (3) to wash the wafer (100) for the first time, after the first washing, the containing frame (411) enters the second etching device (2) to etch the wafer (100) for the second time, after the second etching, the containing frame (411) enters the second washing device (3) to wash the wafer (100) for the second time, and so on, until all the etching and cleaning processes are completed; in the process of each etching, control the wafer drive mechanism to drive all the wafers (100) and all the clamping plates (412) to rotate synchronously around the first center line.

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