A method and system for identifying a scanning probe lithography area

By acquiring the single-row topography height sequence, the deepest etching point and the highest accumulation point are determined, and linear fitting is performed to identify etching boundary points. This solves the subjectivity and low efficiency problems of existing scanning probe etching technology, and realizes automated, high-precision identification and real-time optimization of nano-etched regions.

CN122108017APending Publication Date: 2026-05-29CHINA COAL SCIENCE & TECHNOLOGY (TIANJIN) ROCK FORMATION INTELLIGENT CONTROL TECHNOLOGY CO LTD +2
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
CHINA COAL SCIENCE & TECHNOLOGY (TIANJIN) ROCK FORMATION INTELLIGENT CONTROL TECHNOLOGY CO LTD
Filing Date
2026-02-12
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Existing scanning probe etching technology relies on subjective and inefficient manual selection of cross-section measurement methods, resulting in poor accuracy and low efficiency in nanostructure evaluation, making it impossible to acquire global and statistical information and difficult to achieve real-time feedback and control.

Method used

By acquiring the single-row topography height sequence, the deepest etching point and the highest accumulation point are determined. Linear fitting is then used to identify etching boundary points, and the etching area of ​​the scanning probe is constructed to achieve automated and high-precision identification of nano-etched areas.

Benefits of technology

It achieves automated and high-precision identification of the boundaries of nano-etched regions, providing a reliable data foundation for real-time optimization and quantitative evaluation of scanning probe etching processes, and overcoming the subjectivity and inefficiency of existing manual measurement methods.

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Abstract

The application provides a method and system for identifying a scanning probe etching area. The method comprises: obtaining a single-row topography height sequence, the sequence comprising a plurality of data points, each data point having a position coordinate and a corresponding height value; determining an etching deepest point, a left-side accumulation highest point and a right-side accumulation highest point based on the height sequence; determining a left-side etching boundary point based on the left-side accumulation highest point and the etching deepest point; determining a right-side etching boundary point based on the right-side accumulation highest point and the etching deepest point; and constructing a scanning probe etching area based on the left-side etching boundary point and the right-side etching boundary point. The technical solution provided by the application overcomes the defects of the existing manual measurement method, such as subjectivity, inefficiency and inability to globally evaluate, and realizes automatic and high-precision identification of the boundary of a nanometer etching area, thereby providing a reliable data basis for real-time optimization and quantitative evaluation of a scanning probe etching process.
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