Cleaning process for silicon carbide wafer with low oxide layer
By combining ozone aqueous solution, dilute hydrofluoric acid, and metal ion removal solution for cleaning, the problem of surface cleanliness and oxide layer control of silicon carbide wafers has been solved, improving device performance and manufacturing reliability while meeting environmental protection requirements.
Patent Information
- Application Number
- CN202511778860.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-28
- Publication Date
- 2026-02-13
AI Technical Summary
Existing silicon carbide wafer cleaning processes struggle to balance cleanliness with low oxide layer requirements, leading to decreased device performance, particularly high interface state density and unstable breakdown voltage.
After ultrasonic cleaning, the solution is sequentially immersed in ozone aqueous solution, dilute hydrofluoric acid, and metal ion removal solution, combined with an inert gas protection cleaning process to form a passivation protective layer and inhibit oxidation reaction.
Effectively controlling the oxide layer thickness to below 1nm improves device channel mobility and breakdown voltage stability, reduces surface roughness, reduces waste liquid discharge, and meets green manufacturing requirements.
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Figure CN121531950A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor materials, in particular to a silicon carbide wafer cleaning process with low oxidation layer. BACKGROUND
[0002] As the third generation of wide bandgap semiconductor material, silicon carbide has become the core substrate for manufacturing high-temperature high-power and high-frequency devices due to its high-temperature resistance, high breakdown field strength, high thermal conductivity and high-frequency characteristics, and is widely used in new energy vehicles, rail transit and smart grid. The performance of the device directly depends on the cleanliness of the silicon carbide substrate surface and the interface quality. Residual organic matter, metal contaminants, micro-particles or abnormal oxidation layer on the surface can significantly degrade the electrical performance and reliability of the device. Therefore, an efficient and low-damage cleaning process is the key to the industrialization of high-performance silicon carbide devices.
[0003] At present, the industry mostly follows the improved RCA standard cleaning method for silicon wafers. The core of this method is to use a strong oxidizing mixed solution of hydrogen peroxide and ammonia / hydrochloric acid to remove organic matter, particles and metal contaminants. However, due to the large difference in chemical properties between silicon carbide and silicon, this method has obvious defects. First, hydrogen peroxide will react violently with the surface of silicon carbide, generating a silicon dioxide layer with a thickness of more than 2 nanometers. This thick oxidation layer will destroy the lattice matching of the subsequent gate oxide / silicon carbide interface, leading to an increase in interface state density, which restricts the channel mobility of silicon carbide MOSFET devices and reduces the breakdown voltage stability and reliability. Second, although hydrofluoric acid can be used to remove the oxidation layer, pure hydrofluoric acid can only strip the oxidation layer and cannot remove organic matter and metal contaminants. Moreover, the cleaned silicon carbide surface is highly active and will quickly react with air to cause secondary oxidation during drying and transportation. The oxidation layer problem cannot be fundamentally solved, which seriously affects the yield of device mass production.
[0004] In summary, the existing process cannot meet the needs of silicon carbide wafer cleanliness and low oxidation layer. Therefore, it is necessary to develop a new cleaning process that can effectively remove contaminants and inhibit the excessive generation of oxidation layer to adapt to the manufacturing of high-performance silicon carbide devices. SUMMARY
[0005] Therefore, the purpose of the present application is to provide a silicon carbide wafer cleaning process with low oxidation layer to solve the problem that the existing process cannot meet the needs of silicon carbide wafer cleanliness and low oxidation layer.
[0006] To achieve the above technical purpose, the present application provides a silicon carbide wafer cleaning process with low oxidation layer, which comprises the following steps:
[0007] Step S1, immerse the silicon carbide wafer in an organic solvent for ultrasonic cleaning;
[0008] Step S2, immerse the ultrasonically cleaned silicon carbide wafer in an ozone water solution, a hydrofluoric acid solution and a metal ion removal solution in sequence for immersion cleaning;
[0009] Step S3, cleaning the silicon carbide wafer after the immersion, drying, and obtaining a silicon carbide wafer with a clean surface and a thin oxidation layer.
[0010] Further, after the ultrasonic cleaning in step S1 and before the immersion in step S2, the silicon carbide wafer after the ultrasonic cleaning is immersed in a surfactant solution for immersion treatment.
[0011] Further, the surfactant solution is an APM solution with a mass fraction of 0.1-2%, and the immersion time is 1-3 min.
[0012] Further, the organic solvent is acetone or isopropyl alcohol, and the ultrasonic cleaning time is 3-10 min.
[0013] Further, the concentration of the ozone aqueous solution is 5-20 ppm, and the immersion time of the silicon carbide wafer in the ozone aqueous solution is 1-5 min.
[0014] Further, the mass fraction of the hydrofluoric acid solution is 0.5%-2%, and the immersion time of the silicon carbide wafer in the hydrofluoric acid solution is 15-60 s.
[0015] Further, the metal ion removal solution is a hydrochloric acid solution, a citric acid solution, or an EDTA solution; the immersion temperature of the silicon carbide wafer in the metal ion removal solution is 40-60°C, and the immersion time is 2-8 min.
[0016] Further, in step S3, the cleaning method of the silicon carbide wafer is sonic cleaning.
[0017] Further, the energy parameters of the sonic cleaning are megasonic waves with a frequency of 800-1000 kHz, or ultrasonic waves with a frequency of 120-200 kHz.
[0018] Further, the drying process includes isopropyl alcohol vapor drying.
[0019] In summary, the present application provides a silicon carbide wafer cleaning process with a low oxidation layer. The silicon carbide wafer is first immersed in an organic solvent for ultrasonic cleaning, then sequentially immersed in an ozone aqueous solution, a hydrofluoric acid solution, and a metal ion removal solution for immersion, and finally cleaned and dried to obtain a silicon carbide wafer with a clean surface and a thin oxidation layer. By constructing the composite cleaning process of "ozone oxidation-hydrofluoric acid corrosion-metal ion removal solution complexation", the present application efficiently removes organic contaminants, particulate impurities, and metal ions on the surface of the silicon carbide wafer, significantly inhibits the oxidation reaction on the surface of the silicon carbide wafer, and simultaneously forms a passivation protective layer on the wafer surface in situ, effectively delaying the secondary oxidation of the wafer surface in the subsequent storage and application environment.
[0020] Compared with the prior art, the low-oxidation-layer silicon carbide wafer cleaning process provided by the application has the following advantages: first, by avoiding high-oxidizing chemicals while introducing inert gas protection, the thickness of the oxidation layer is stably controlled below 1 nm (optimally 0.5 nm), which is much better than the conventional RCA cleaning (usually > 2 nm); second, the combination process of "ozone water oxidation-dilute hydrofluoric acid stripping" is adopted, and a metal ion removal solution is used, so that the wafer surface is eroded while organic matter, particles and metal contaminants are efficiently removed, thereby ensuring high cleanliness and low roughness; third, the synergistic effect of the low-oxidation-layer wafer and the high cleanliness can reduce the gate oxide / silicon carbide interface state density, improve the device channel electron mobility, breakdown voltage stability and long-term working reliability, and strengthen the device interface quality; fourth, the process does not need to use dangerous chemicals, which not only reduces the operation difficulty and safety risk, but also reduces the discharge amount of waste liquid and harmful pollutants, which is in line with the green manufacturing trend. BRIEF DESCRIPTION OF DRAWINGS
[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings according to these drawings without creative labor.
[0022] Figure 1 A low-oxidation-layer silicon carbide wafer cleaning process flow diagram provided by an embodiment of the present application. DETAILED DESCRIPTION
[0023] The technical solutions of the embodiments of the present application will be described in detail below with reference to the drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of the present application.
[0024] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore it cannot be understood as a limitation of the present application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.
[0025] Unless specifically stated and defined otherwise, the terms "mount", "connect", "connect" should be broadly understood, for example, can be fixed connection, can also be detachable connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.
[0026] Among them, all raw materials of the application have no special restrictions on their sources, and can be purchased on the market or prepared according to conventional methods well known to those skilled in the art.
[0027] The embodiment of the present application provides a silicon carbide wafer cleaning process with low oxidation layer, comprising the following steps:
[0028] Step S1, using organic solvent to ultrasonic cleaning silicon carbide wafer;
[0029] Step S2, the silicon carbide wafer after ultrasonic cleaning is immersed in ozone aqueous solution for oxidation treatment; the silicon carbide wafer is immersed in hydrofluoric acid solution to remove the surface oxidation layer; the silicon carbide wafer is immersed in metal ion removal solution to remove metal contaminants;
[0030] Step S3, cleaning the silicon carbide wafer obtained in step 2, drying.
[0031] It should be noted that the organic solvent combined with the ultrasonic cleaning process can strip and dissolve most of the organic contaminants (such as grease, photoresist residue) and microparticles on the wafer surface. The ozone aqueous solution can utilize the strong oxidizing property of ozone to degrade the residual stubborn organic matter (such as high molecular polymer) into carbon dioxide and water, so as to achieve deep impurity removal; at the same time, the ozone aqueous solution reacts mildly with silicon carbide, easily forming a uniform and extremely thin "sacrificial layer" to wrap microparticles and weaken their adhesion, paving the way for subsequent desorption; in addition, compared with hydrogen peroxide, the oxidation potential and activity of the ozone aqueous solution are easier to control, which can avoid excessive non-selective oxidation and control the thickness of the oxidation layer from the source. The dilute hydrofluoric acid solution can react with the "sacrificial layer" and the oxidation layer of the wafer to achieve selective peeling of the oxidation layer to expose the silicon carbide wafer; and the low concentration hydrofluoric acid solution can reduce the erosion of the silicon carbide wafer body and reduce etching damage. The acidic metal ion removal solution deeply removes the metal in a mild manner, without introducing strong oxidizing agents such as hydrogen peroxide, which can avoid the catalysis of metal ions on the oxidation of the wafer surface.
[0032] In some embodiments, after ultrasonic cleaning in step S1 and before immersion in step S2, a surfactant solution immersion process is added, and the silicon carbide wafer after ultrasonic cleaning is immersed in the surfactant solution for immersion treatment.
[0033] In some preferred embodiments, the surface active agent solution is a 0.1-2% APM solution by mass fraction, and the soaking time is 1-3 min. Specifically, the 0.1-2% APM solution is prepared using conventional concentrations of raw materials (28% concentrated ammonia, 30% concentrated hydrogen peroxide). In some specific embodiments, the 1% APM solution is prepared using conventional concentrations of raw materials (28% concentrated ammonia, 30% concentrated hydrogen peroxide), and the volume ratio of concentrated ammonia, concentrated hydrogen peroxide, and deionized water is 1:1:100.
[0034] In some embodiments, the organic solvent is acetone or isopropyl alcohol, and the ultrasonic cleaning time is 3-10 min.
[0035] In some embodiments, the concentration of the ozone water solution is 5-20 ppm, and the soaking time of the silicon carbide wafer in the ozone water solution is 1-5 min.
[0036] In some embodiments, the mass fraction of the hydrofluoric acid solution is 0.5%-2%, and the soaking time of the silicon carbide wafer in the hydrofluoric acid solution is 15-60 s.
[0037] In some embodiments, the metal ion removal solution is a hydrochloric acid solution, a citric acid solution, or an EDTA solution; the soaking temperature of the silicon carbide wafer in the metal ion removal solution is 40-60°C, and the soaking time is 2-8 min.
[0038] In some embodiments, in step S3, the cleaning method of the silicon carbide wafer is acoustic wave cleaning.
[0039] In some embodiments, the energy parameters of the acoustic wave cleaning are: megasonic waves with a frequency of 800-1000 kHz; or ultrasonic waves with a frequency of 120-200 kHz.
[0040] It should be noted that overflow flushing of the wafer with high-purity deionized water can enhance the removal of residual solvents and desorbed contaminants; at the same time, the last flushing is supplemented with acoustic wave cleaning, which can achieve physical peeling of nanoparticles through high-frequency vibration, ensuring that there is no residual contamination on the wafer surface.
[0041] In some embodiments, the drying process includes isopropyl alcohol vapor drying, and the inert gas used is high-purity nitrogen or argon.
[0042] It should be noted that the cleaned wafer is quickly transferred to a drying device filled with the inert gas environment for isopropyl alcohol (IPA) vapor drying: in-situ hydrogen passivation is performed immediately after drying, which terminates hydrogen atoms on the dangling bonds on the surface of the silicon carbide, further stabilizes the surface, and reduces the interface state density.
[0043] The following reference examples are provided by the applicant to describe the present application, and it should be noted that these examples are only descriptive, and do not limit the present application in any way.
[0044] Example 1
[0045] The present embodiment provides a low-oxide silicon carbide wafer cleaning process, the specific steps are as follows:
[0046] Step S1, take a piece of 4-inch n-type 4H-SiC substrate, ultrasonic immersion in acetone solution and isopropyl alcohol solution respectively for 5 min, then use deionized water to rinse the substrate;
[0047] Step S2, immerse the pretreated substrate in an ozone water solution with a concentration of 10 ppm, and treat it at room temperature for 3 min; take out the substrate and immerse it in a 1% hydrofluoric acid solution for 30 s; then transfer the substrate to a 1.5% hydrochloric acid solution and treat it at a constant temperature of 50°C for 5 min;
[0048] Step S3, overflow rinse the substrate with deionized water with a resistivity of 5 min; the last 1 min is synchronized with the opening of megasonic assisted rinsing;
[0049] Step S4, immediately transfer the rinsed substrate to a dry box filled with high-purity nitrogen for IPA steam drying, and the drying time is 10 min.
[0050] Cleaning effect characterization: the substrate surface oxide layer thickness is 0.7 nm by ellipsometer test; X-ray photoelectron spectroscopy (XPS) analysis shows that the surface carbon and metal contamination contents are lower than the instrument detection limit; atomic force microscope (AFM) characterization results show that the surface root mean square roughness (RMS) is less than 0.2 nm.
[0051] Example 2
[0052] The present embodiment provides a low-oxide silicon carbide wafer cleaning process, the specific steps are as follows:
[0053] Step S1, take a piece of 4-inch n-type 4H-SiC substrate, ultrasonic immersion in acetone solution and isopropyl alcohol solution respectively for 5 min, then use deionized water to rinse the substrate;
[0054] Step S2, use a surfactant solution (1% APM solution, Ammonia-Peroxide-Mixture, a very dilute variant) at room temperature for 2 min to remove soluble contaminants;
[0055] Step S3, the pretreated substrate wafer is immersed in an ozone aqueous solution with a concentration of 5 ppm, and is treated at room temperature for 2 min; the substrate wafer is taken out and immersed in a hydrofluoric acid solution with a mass fraction of 0.5%, and is soaked for 20 s; then the substrate wafer is transferred to a hydrochloric acid solution with a mass fraction of 1.0%, and is treated at a constant temperature of 40°C for 3 min;
[0056] Step S4, the substrate wafer is overflow washed with deionized water for 5 min;
[0057] Step S5, the rinsed substrate wafer is immediately transferred to a dry box filled with high-purity nitrogen, and is subjected to IPA vapor drying for 10 min.
[0058] The cleaning effect is characterized: the thickness of the oxide layer on the substrate surface is 0.4 nm through an ellipsometer.
[0059] Comparative Example 1
[0060] The comparative example provides a silicon carbide wafer cleaning process with a low oxide layer, and the specific steps are as follows:
[0061] Step S1, a 4-inch n-type 4H-SiC substrate wafer is taken, and is sequentially immersed in acetone solution and isopropyl alcohol solution for ultrasonic washing for 5 min respectively, and then is washed with deionized water;
[0062] Step S2, the pretreated substrate wafer is immersed in a hydrofluoric acid solution with a mass fraction of 1%, and is soaked for 30 s; then the substrate wafer is immersed in an ozone aqueous solution with a concentration of 10 ppm, and is treated at room temperature for 3 min; then the substrate wafer is transferred to a hydrochloric acid solution with a mass fraction of 1.5%, and is treated at a constant temperature of 50°C for 5 min;
[0063] Step S3, the substrate wafer is overflow washed with deionized water with a resistivity of 18 MΩ·cm for a total time of 5 min; the last 1 min is simultaneously started with megasonic assisted washing; Step S4, the rinsed substrate wafer is immediately transferred to a dry box filled with high-purity nitrogen, and is subjected to IPA vapor drying for 10 min.
[0064] Comparative Example 2
[0065] The comparative example provides a silicon carbide wafer cleaning process with a low oxide layer, and the specific steps are as follows:
[0066] Step S1, a 4-inch n-type 4H-SiC substrate wafer is taken, and is sequentially immersed in acetone solution and isopropyl alcohol solution for ultrasonic washing for 5 min respectively, and then is washed with deionized water;
[0067] Step S2, the pretreated substrate wafer is immersed in a hydrofluoric acid solution with a mass fraction of 1%, and is soaked for 30 s; then the substrate wafer is immersed in an ozone aqueous solution with a concentration of 10 ppm, and is treated at room temperature for 3 min; then the substrate wafer is transferred to a hydrochloric acid solution with a mass fraction of 1.5%, and is treated at a constant temperature of 50°C for 5 min;
[0068] Step S2: Immerse the pretreated substrate in an ozone aqueous solution with a concentration of 10 ppm and treat it at room temperature for 3 min; transfer the substrate to a hydrochloric acid solution with a mass fraction of 1.5% and treat it at a constant temperature of 50°C for 5 min; then transfer the substrate to a hydrofluoric acid solution with a mass fraction of 1% and soak it for 30 s.
[0069] Step S3, using resistivity The substrate was rinsed with deionized water for a total time of 5 minutes; during the last minute, megasonic assisted rinsing was simultaneously activated.
[0070] Step S4: Immediately transfer the rinsed substrate to a drying oven filled with high-purity nitrogen for IPA steam drying for 10 minutes.
[0071] Cleaning effect characterization: The oxide layer thickness on the substrate surface was 0.7 nm as measured by ellipsometry; X-ray photoelectron spectroscopy (XPS) analysis showed that the content of carbon and metal contamination on the surface was below the instrument detection limit; Atomic force microscopy (AFM) characterization results showed that the root mean square roughness (RMS) of the surface was <0.2 nm.
[0072] Comparative Example 3
[0073] This comparative example provides a silicon carbide wafer cleaning process with a low oxide layer, the specific steps of which are as follows:
[0074] Step S1: Take a 4-inch n-type 4H-SiC substrate and ultrasonically immerse it in acetone solution and isopropanol solution for 5 minutes each. After completion, rinse the substrate with deionized water.
[0075] Step S2: Immerse the pretreated substrate in a 10 ppm SC1 solution and treat it at room temperature for 3 min; remove the substrate and immerse it in a 1% hydrofluoric acid solution for 30 s; then transfer the substrate to a 1.5% hydrochloric acid solution and treat it at a constant temperature of 50°C for 5 min.
[0076] Step S3, using resistivity The substrate was rinsed with deionized water for a total time of 5 minutes; during the last minute, megasonic assisted rinsing was simultaneously activated.
[0077] Step S4: Immediately transfer the rinsed substrate to a drying oven filled with high-purity nitrogen for IPA steam drying for 10 minutes.
[0078] Cleaning effect characterization: The oxide layer thickness on the substrate surface was 0.7 nm as measured by ellipsometry; X-ray photoelectron spectroscopy (XPS) analysis showed that the content of carbon and metal contamination on the surface was below the instrument detection limit; Atomic force microscopy (AFM) characterization results showed that the root mean square roughness (RMS) of the surface was <0.2 nm.
[0079] Comparative Example 4
[0080] This comparative example provides a silicon carbide wafer cleaning process with a low oxide layer, the specific steps of which are as follows:
[0081] Step S1: Take a 4-inch n-type 4H-SiC substrate and ultrasonically immerse it in acetone solution and isopropanol solution for 5 minutes each. After completion, rinse the substrate with deionized water.
[0082] Step S2: Immerse the pretreated substrate in a 10 ppm potassium hydroxide solution and treat it at room temperature for 3 min; remove the substrate and immerse it in a 1% hydrofluoric acid solution for 30 s; then transfer the substrate to a 1.5% hydrochloric acid solution and treat it at a constant temperature of 50°C for 5 min.
[0083] Step S3, using resistivity The substrate was rinsed with deionized water for a total time of 5 minutes; during the last minute, megasonic assisted rinsing was simultaneously activated.
[0084] Step S4: Immediately transfer the rinsed substrate to a drying oven filled with high-purity nitrogen for IPA steam drying for 10 minutes.
[0085] Cleaning effect characterization: The oxide layer thickness on the substrate surface was 0.7 nm as measured by ellipsometry; X-ray photoelectron spectroscopy (XPS) analysis showed that the content of carbon and metal contamination on the surface was below the instrument detection limit; Atomic force microscopy (AFM) characterization results showed that the root mean square roughness (RMS) of the surface was <0.2 nm.
[0086] Table 1. Surface characterization of silicon carbide substrates
[0087]
[0088] The above are merely preferred embodiments of this application and are not intended to limit the present invention. Although this application has been described in detail with reference to examples, those skilled in the art can still modify the technical solutions described in the foregoing examples or make equivalent substitutions for some of the technical features. However, any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A silicon carbide wafer cleaning process with a low oxide layer, characterized in that, Includes the following steps: Step S1: Immerse the silicon carbide wafer in an organic solvent for ultrasonic cleaning; Step S2: Immerse the ultrasonically cleaned silicon carbide wafer in ozone aqueous solution, hydrofluoric acid solution and metal ion removal solution in sequence for washing. Step S3: Clean and dry the immersed silicon carbide wafer to obtain a silicon carbide wafer with a clean surface and a thin oxide layer.
2. The silicon carbide wafer cleaning process with low oxide layer according to claim 1, characterized in that, After ultrasonic cleaning in step S1 and before immersion in step S2, the ultrasonically cleaned silicon carbide wafer is immersed in a surfactant solution for immersion treatment.
3. The silicon carbide wafer cleaning process with low oxide layer according to claim 2, characterized in that, The surfactant solution includes an APM solution with a mass fraction of 0.1-2%, and the immersion time is 1-3 minutes.
4. The silicon carbide wafer cleaning process with low oxide layer according to claim 1, characterized in that, The organic solvent is acetone or isopropanol, and the ultrasonic cleaning time is 3-10 minutes.
5. The silicon carbide wafer cleaning process with low oxide layer according to claim 1, characterized in that, The concentration of the ozone aqueous solution is 5~20ppm, and the immersion time of the silicon carbide wafer in the ozone aqueous solution is 1~5min.
6. The silicon carbide wafer cleaning process with low oxide layer according to claim 1, characterized in that, The hydrofluoric acid solution has a mass fraction of 0.5% to 2%, and the silicon carbide wafer is immersed in the hydrofluoric acid solution for 15 to 60 seconds.
7. The silicon carbide wafer cleaning process with low oxide layer according to claim 1, characterized in that, The metal ion removal solution is a hydrochloric acid solution, a citric acid solution, or an EDTA solution; the silicon carbide wafer is immersed in the metal ion removal solution at a temperature of 40~60°C for 2~8 minutes.
8. The silicon carbide wafer cleaning process with low oxide layer according to claim 1, characterized in that, In step S3, the silicon carbide wafer is cleaned by acoustic cleaning.
9. The silicon carbide wafer cleaning process with low oxide layer according to claim 8, characterized in that, The energy parameters for the acoustic cleaning are: megasonic waves with a frequency of 800~1000kHz; or ultrasonic waves with a frequency of 120~200kHz.
10. The silicon carbide wafer cleaning process with low oxide layer according to claim 1, characterized in that, The drying process includes isopropanol steam drying.