Light source, measurement device, method for manufacturing light source, and method for manufacturing measurement device

Abstract

A light source (122) is provided with: a light-emitting chip (1100) on which a surface light-emitting element (1110) is disposed, the light-emitting chip (1100) having a first surface (1102) electrically connected to a cathode of the surface light-emitting element (1110) and a second surface (1101) electrically connected to an anode of the surface light-emitting element (1110); a substrate (1200) on which a first conductive pattern (1210) and a second conductive pattern (1220) are formed; a conductive bonding portion (1300) that bonds the first surface (1102) of the light emitting chip (1100) and the first conductive pattern (1210); and a wire (1250) electrically connecting the second surface (1101) of the light emitting chip (1100) and the second conductive pattern (1220). The light source (122) is further provided with a non-conductive protection part (1310) that is disposed on the outer peripheral side of the bonding part (1300) and covers at least a part of the outer peripheral surface of the bonding part (1300).

Description

Technical Field

[0001] The technology disclosed in this specification relates to light sources, measuring devices, methods for manufacturing light sources, and methods for manufacturing measuring devices. Background Technology

[0002] With the development of AD (Autonomous Driving) and ADAS (Advanced Driver-Assistance Systems), LiDAR (Light Detection and Ranging), as one of the measuring devices used by vehicles to understand their surroundings and estimate their position while driving, has seen continuous progress in its development and research. LiDAR includes a projector that projects (irradiates) a laser onto the object being measured and a receiver that receives the reflected light from the object. Based on the difference between the moment the laser is emitted by the projector and the moment the reflected light is received by the receiver, LiDAR measures the distance to the object and outputs information related to the object. The projector includes a light source and a projection lens through which the light emitted from the light source passes (for example, see Patent Document 1).

[0003] Additionally, the projector has a semiconductor laser that emits laser light. The receiver has: a filter that allows a predetermined bandpass of the laser light output from the projector and reflected by the object being measured to pass through; and a light-receiving element that receives the laser light after passing through the filter (for example, see Patent Document 1).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2021-105613 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] The inventors have researched a technique for using a light source comprising a light-emitting chip with a surface-emitting element as the light source for a projector. This light source includes a light-emitting chip, a substrate, a conductive bonding portion, and conductive wires. The light-emitting chip has a first surface electrically connected to the cathode of the surface-emitting element and a second surface electrically connected to the anode of the surface-emitting element. A first conductive pattern and a second conductive pattern are formed on the substrate. The bonding portion bonds the first surface of the light-emitting chip to the first conductive pattern. The conductive wires electrically connect the second surface of the light-emitting chip to the second conductive pattern.

[0009] In such a light source, the cathode of the surface-emitting element may be short-circuited to conductive components such as wires or the anode of the surface-emitting element via conductive joints.

[0010] This specification discloses a technique that can solve the above-mentioned problems.

[0011] Furthermore, a specified wavelength range is typically shown on the specification sheet of a semiconductor laser. The specified wavelength range is a pre-defined deviation range for the wavelength of the laser emitted by the semiconductor laser. The specified wavelength range is, for example, defined based on manufacturing tolerances of the semiconductor laser. In conventional measuring apparatuses, assuming that the wavelength of the laser emitted by the semiconductor laser deviates within the specified wavelength range, the bandpass of the filter in the photodetector is set to include the aforementioned specified wavelength range.

[0012] However, the actual wavelength of the laser emitted by the semiconductor laser mounted on the measuring device is only a portion of the specified wavelength range. In short, in conventional measuring devices, the bandpass of the filter is set to an extremely wide bandwidth compared to the wavelength range actually required for the measurement. Therefore, the light-receiving element is not only prone to receiving the laser emitted by the semiconductor laser, but also prone to receiving noise (interference light such as sunlight with wavelengths different from those of the semiconductor laser). As a result, the measurement accuracy of the measuring device (e.g., the measurable distance becomes shorter) may be reduced.

[0013] This specification discloses a technique that can solve the above-mentioned problems.

[0014] means for solving problems

[0015] The techniques disclosed in this specification can be implemented, for example, in the following ways.

[0016] (1) A light source according to one embodiment disclosed in this specification comprises: a light-emitting chip having a surface light-emitting element and having a first surface electrically connected to the cathode of the surface light-emitting element and a second surface electrically connected to the anode of the surface light-emitting element; a substrate having a first conductive pattern and a second conductive pattern formed thereon; a conductive bonding portion bonding the first surface of the light-emitting chip to the first conductive pattern; and a wire connecting the second surface of the light-emitting chip to the second conductive pattern, wherein the light source comprises a non-conductive protective portion disposed on the outer periphery of the bonding portion and covering at least a portion of the outer periphery of the bonding portion.

[0017] According to this light source, compared with a structure in which no protective portion is provided on the outer periphery of the conductive joint, it is possible to suppress the cathode of the surface light-emitting element from short-circuiting with conductive components such as the anode of the surface light-emitting element via the joint.

[0018] (2) In the light source described in (1) above, it may also be configured such that a connecting portion electrically connected to the wire is provided at the periphery of the second surface of the light-emitting chip, and the protective portion covers the outer peripheral surface of the connecting portion side of the joint. According to this light source, since the protective portion is located between the joint and the wire, it is possible to suppress the short circuit between the cathode of the surface light-emitting element and the wire via the joint.

[0019] (3) In the light source described in (1) or (2) above, the protective portion may also be configured to cover the entire circumference of the outer peripheral surface of the joint. According to this light source, it is possible to effectively suppress the short circuit between the cathode of the surface light-emitting element and the conductive component via the joint.

[0020] (4) In any of the light sources described in (1) to (3) above, it is also possible to configure the light source such that, when viewed from a direction orthogonal to the light-emitting chip, at least a portion of the outer peripheral surface of the joint is located inside the outer edge of the light-emitting chip, and the protective portion has a support portion sandwiched between the light-emitting chip and the substrate. In this light source, since there is no joint, the support portion of the protective portion is located in the gap between the light-emitting chip and the substrate. Therefore, according to this light source, compared with a structure without a support portion, it is possible to suppress, for example, damage to the light-emitting chip due to applying a load to the light-emitting chip.

[0021] (5) In any of the light sources described in (1) to (4) above, the protective portion may be configured such that it contacts the outer peripheral surface of the joint, and the area of ​​the exposed surface of the protective portion is larger than the contact area between the protective portion and the joint. According to this light source, the protective portion contacts the outer peripheral surface of the joint, which functions as a conductive path. Furthermore, the area of ​​the exposed surface of the protective portion is larger than the contact area between the protective portion and the joint. Therefore, heat generated at the joint can be effectively released via the protective portion.

[0022] (6) The measuring device may also include: a light emitter having a light source of any one of (1) to (5) above; and a light receiver receiving light output from the light emitter and reflected by the measuring object. According to this structure, it is possible to suppress the cathode of the surface light-emitting element from short-circuiting with a conductive component such as the anode of the surface light-emitting element via the junction.

[0023] (7) In a method for manufacturing a light source according to one aspect of this specification, the light source comprises: a light-emitting chip, the light-emitting chip having a surface light-emitting element disposed thereon and having a first surface electrically connected to the cathode of the surface light-emitting element and a second surface electrically connected to the anode of the surface light-emitting element; and a substrate having a first conductive pattern and a second conductive pattern formed thereon. The method for manufacturing the light source is characterized by comprising: a step of applying a conductive first bonding material between the first surface of the light-emitting chip and the first conductive pattern of the substrate, and applying a non-conductive second bonding material to at least a portion around the first bonding material; a step of electrically connecting the second surface of the light-emitting chip to the second conductive pattern via a wire; and a step of curing the first bonding material and the second bonding material to form a conductive joint between the first surface of the light-emitting chip and the substrate, and a protective portion covering at least a portion of the outer peripheral surface of the joint. According to this manufacturing method, it is possible to suppress short circuits between the cathode of the surface light-emitting element and conductive components such as the anode of the surface light-emitting element via the joint, and to manufacture a light source.

[0024] (8) Another type of light source disclosed in this specification comprises: a light-emitting chip having a surface light-emitting element disposed thereon and having a first surface electrically connected to the cathode of the surface light-emitting element and a second surface electrically connected to the anode of the surface light-emitting element; a substrate having a first conductive pattern and a second conductive pattern formed thereon; a conductive joint that joins the first surface of the light-emitting chip to the first conductive pattern; and a wire that electrically connects the second surface of the light-emitting chip to the second conductive pattern, wherein, when viewed in a first direction orthogonal to the light-emitting chip, at least a portion of the outer peripheral surface of the joint is located inside the outer edge of the light-emitting chip, and the connection portion of the wire to the second surface is located inside the outer peripheral surface of the joint. According to this light source, for example, compared to a structure where the connection portion of the wire to the light-emitting chip is located outside the outer peripheral surface of the joint, damage to the light-emitting chip due to load applied to the connection portion of the light-emitting chip can be suppressed.

[0025] (9) In the light source described in (8) above, it may also be configured such that, when viewed from the first direction, the periphery of the light-emitting area of ​​the light-emitting chip is located inside the outer peripheral surface of the joint, and the angle θ formed by the imaginary surface of the edge line of the light-emitting area and the edge line of the outer peripheral surface of the joint with respect to the first direction is 45 degrees or more. According to this light source, the heat generated in the light-emitting area can be effectively released to the outside through the joint.

[0026] (10) A measuring apparatus according to one aspect disclosed in this specification comprises: a projector having a semiconductor laser that emits laser light; and a receiver having a filter that allows a specific bandpass of laser light from the laser light output from the projector and reflected by the object being measured to pass through, and a light-receiving element that receives the laser light after it has passed through the filter, wherein the specific bandpass of the filter is a portion of a predetermined wavelength band defined based on manufacturing deviations of the semiconductor laser. According to this measuring apparatus, compared to a structure where the specific bandpass of the filter is the same as the predetermined wavelength band, the influence of noise such as sunlight can be suppressed, for example, an increase in the measurable distance can be achieved.

[0027] (11) In the measuring apparatus described in (10) above, the semiconductor laser may also be configured such that the semiconductor laser includes a first semiconductor laser and a second semiconductor laser, and the filter includes a first filter that allows the laser emitted by the first semiconductor laser to pass through and a second filter that allows the laser emitted by the second semiconductor laser to pass through, wherein the specified wavelengths of the first semiconductor laser and the second semiconductor laser are the same, and the specific bandpasses of the first filter and the second filter are different. According to this measuring apparatus, in the measurement based on the lasers of the first semiconductor laser and the second semiconductor laser respectively, the influence of noise can be suppressed, for example, an increase in the measurable distance can be achieved.

[0028] (12) In the measuring apparatus described in (10) or (11) above, the bandwidth of the specific bandpass may also be configured to be less than 1 / 2 of the bandwidth of the specified band. According to this measuring apparatus, the influence of noise can be suppressed more effectively.

[0029] (13) In a method for manufacturing a measuring device according to one aspect disclosed in this specification, the measuring device comprises: a projector having a semiconductor laser that emits laser light; and a receiver having a filter that allows a specific bandpass of laser light from the laser light output from the projector and reflected by the object being measured to pass through, and a light-receiving element that receives the laser light after it has passed through the filter, wherein the method for manufacturing the measuring device is characterized by comprising: a step of determining which of a plurality of wavelength classes, defined by dividing a predetermined wavelength band based on a manufacturing deviation of the semiconductor laser, a selected semiconductor laser belongs to; and a step of configuring the filter having a specific bandpass corresponding to the wavelength class to which the selected semiconductor laser belongs, in the light receiver. According to this manufacturing method, a measuring device that suppresses the effects of noise can be manufactured more effectively.

[0030] Furthermore, the technology disclosed in this specification can be implemented in various ways, such as by means of a light source, a measuring device equipped with the light source, a method for manufacturing the light source, a method for selecting a filter, and a method for manufacturing the measuring device. Attached Figure Description

[0031] Figure 1 This is a block diagram that schematically illustrates the structure of the measuring device 110 in the first embodiment.

[0032] Figure 2 This is an explanatory diagram showing the structure of the upper surface of the light source 122.

[0033] Figure 3 It means Figure 2 An explanatory diagram of the cross-sectional structure of the light source 122 at position III-III.

[0034] Figure 4 This is a flowchart showing a portion of the manufacturing process of the light source 122.

[0035] Figure 5 This is an explanatory diagram showing the upper surface structure of the light source 122a in the second embodiment.

[0036] Figure 6 It means Figure 5 An explanatory diagram of the cross-sectional structure of the light source 122 at position VI-VI.

[0037] Figure 7 This is a block diagram that schematically shows the structure of the measuring device 210 in the embodiment.

[0038] Figure 8 This is an explanatory diagram representing the specified wavelength band B of the semiconductor laser 223.

[0039] Figure 9 This is a flowchart showing a part of the manufacturing process of the measuring device 210.

[0040] Figure 10 This is an explanatory diagram showing the classification of the specified band B.

[0041] Figure 11 This is an explanatory diagram showing a specific bandpass H1 for the first wavelength class f1.

[0042] Figure 12 This is an illustration of a specific bandpass H2 for the second wavelength class f2. Detailed Implementation

[0043] A. First implementation method:

[0044] A-1. Structure of measuring device 110:

[0045] Figure 1 This is a block diagram that schematically illustrates the structure of the measuring device 110 in this first embodiment. (As shown...) Figure 1 As shown, the measuring device 110 includes a projector 120 that illuminates the object W with an emitted light L1 (e.g., a laser beam) and a receiver 130 that receives the reflected light L2 (return light) from the object W after the emitted light L1 is reflected back by the object W, and functions as a flash lidar. The measuring device 110 measures the difference between the time when the projector 120 emits the emitted light L1 and the time when the receiver 130 receives the reflected light L2 (the time of flight of the laser, hereinafter referred to as "TOF") to obtain information related to the object W.

[0046] The measuring device 110 is mounted, for example, on a vehicle equipped with AD or ADAS (not shown). The measuring device 110 assists in detecting objects such as people and other vehicles while the vehicle is in motion, and provides other devices and users with various information useful for ensuring the safety of the vehicle driver and people around the vehicle, and reducing damage to objects around the vehicle while the vehicle is in motion.

[0047] The projector 120 has a light source 122, a projection optical system 124, a projection control device 126, and a current source 128.

[0048] Light source 122 includes a light source having one or more light-emitting elements (not shown), or an array of one or more light-emitting elements (e.g., an array of light-emitting elements obtained by arranging the light-emitting elements in a linear (one-dimensional) or planar (two-dimensional) configuration). As described later, in this embodiment, the light-emitting element is a planar light-emitting element 1110. The structure of light source 122 will be described later.

[0049] Current source 128 supplies current corresponding to the control signal input from light emission control device 126 to the light-emitting element constituting light source 122. For example, current source 128 supplies periodic square wave current to the light-emitting element to switch the current flowing through the light-emitting element on and off.

[0050] The illumination control device 126 controls the current (drive current) supplied from the current source 128 to the light-emitting element by generating a control signal for the control current source 128 and inputting it into the current source 128. The illumination control device 126 inputs a signal indicating the moment when the light-emitting element emits light (the moment when the light-emitting element emits light, hereinafter referred to as the "illumination moment") to the TOF measuring device 40. The illumination control device 126 causes the light-emitting element to emit light periodically by, for example, controlling the periodic switching of the current flowing through the light-emitting element.

[0051] The projection optical system 124 adjusts the distribution of the emitted light L1, for example, by imparting optical effects (refractive, scattering, diffractive, etc.) to the light emitted from the light source 122. The projection optical system 124 is constructed, for example, using various lenses such as collimating lenses, mirrors, and other optical components.

[0052] The light receiver 130 has a light receiving part 132 and a light receiving optical system 134.

[0053] The light-receiving optical system 134 focuses the emitted light L1 from the projector 120 and the reflected light L2 reflected back by the object being measured, such as the object W, onto the light-receiving part 132. The light-receiving optical system 134 is constructed using various lenses such as condenser lenses, various filters such as wavelength filters, and optical components such as mirrors.

[0054] The light-receiving unit 132 is a light source having one or more light-receiving elements (not shown), or an array of one or more light-receiving elements (e.g., an array of light-receiving elements arranged in a linear (one-dimensional) or planar (two-dimensional) configuration). The light-receiving elements are, for example, photodiodes, SPADs (Single Photon Avalanche Diodes), balanced photodetectors, etc. The light-receiving unit 132 generates a current (hereinafter referred to as "photocurrent") corresponding to the intensity of the reflected light L2 by photoelectric conversion of the reflected light L2 incident from the light-receiving optical system 134. The light-receiving unit 132 inputs a signal indicating the moment when the light-receiving element constituting the light-receiving unit 132 receives the reflected light L2 (hereinafter referred to as "photoreceiving moment") and the photocurrent generated by the light-receiving element to the TOF measuring device 40.

[0055] The measuring device 110 also includes a TOF measuring device 40, a controller 42, and a communication interface (I / F) 50.

[0056] The TOF measuring device 40 calculates the TOF based on a signal indicating the time of light emission input from the light emission control device 126 and a signal indicating the time of light reception input from the light receiving unit 132. The TOF measuring device 40, for example, includes a time-measuring IC (integrated circuit) equipped with a TDC (Time to Digital Converter) circuit. The TOF measuring device 40 inputs the calculated TOF and the photocurrent input from the light receiving unit 132 to the controller 42.

[0057] The controller 42 has a processor (CPU (Central Processing Unit), MPU (Microprocessor), ASIC (Application Specific Integrated Circuit), FPGA (Field Programmable Gate Array), DSP (Digital Signal Processor), etc.). Based on the photocurrent and TOF (Time of Flight) input from the TOF measuring device 40, the controller 42 generates information used in various measurements such as detection and ranging of the target object W. This information includes, for example, a histogram used in time-correlated signal photon counting, distances to various points on the target object W, and point cloud information. Furthermore, the controller 42 controls the light projection control device 126 and the light receiving unit 132. For example, by controlling the light projection control device 126 and the light receiving unit 132, the controller 42 controls the aforementioned light projection and light receiving times to speed up or optimize the processing involved in histogram generation. The information generated by the controller 42 is provided (sent) to the device that utilizes the information (hereinafter referred to as "various utilization device 60") via the communication I / F 50.

[0058] Various devices 60 are used for example, to create point cloud-based environmental maps, and to perform self-position estimation using scanning matching algorithms (NDT (Normal Distributions Transform) and ICP (Iterative Closest Point)) (SLAM (Simultaneous Localization and Mapping)).

[0059] A-2. Structure of Light Source 122:

[0060] Figure 2 This is an explanatory diagram showing the structure of the upper surface of the light source 122. Figure 3 It means Figure 2 An explanatory diagram of the cross-sectional structure of the light source 122 at position III-III. Figure 2 and Figure 3The diagram shows mutually orthogonal XYZ axes used to determine direction. In this specification, for convenience, the positive Z-axis direction is referred to as the up direction, the negative Z-axis direction as the down direction, the positive X-axis direction as the right direction, the negative X-axis direction as the left direction, the positive Y-axis direction as the forward direction, and the negative Y-axis direction as the backward direction. Furthermore, the following will describe… Figure 5 The same applies to the attached images.

[0061] like Figure 2 as well as Figure 3 As shown, the light source 122 has a light-emitting chip 1100, a substrate 1200, a conductive junction 1300, and a wire 1250.

[0062] The light-emitting chip 1100 is an array of surface-emitting elements 1110 arranged two-dimensionally on a substrate (semiconductor substrate, ceramic substrate, etc.). The surface-emitting elements 1110 are surface-emitting laser light-emitting elements, such as VCSELs (Vertical Cavity Surface Emitting Lasers). That is, the light-emitting chip 1100 is a VCSEL array with multiple VCSELs. By using the array of surface-emitting elements as the light source of the projector 120, a space-saving projector 120 capable of high-speed beam scanning with high reliability can be realized.

[0063] The upper surface 1101 of the light-emitting chip 1100 includes a light-emitting region 1103 and a pair of connecting regions 1105. The upper surface 1101 is an example of a second surface. The light-emitting region 1103 is a region where a plurality of surface light-emitting elements 1110 are disposed, and is a region that emits light from the plurality of surface light-emitting elements 1110. The light-emitting region 1103 is located at the center of the upper surface 1101 in the left-right direction. The pair of connecting regions 1105 are disposed at both ends of the upper surface 1101 in the left-right direction. Each connecting region 1105 is electrically connected to the anode of the plurality of surface light-emitting elements 1110. The lower surface 1102 of the light-emitting chip 1100 is electrically connected to the cathode of the plurality of surface light-emitting elements 1110. The lower surface 1102 is an example of a first surface.

[0064] A first conductive pattern 1210 and a pair of second conductive patterns 1220 are formed on a substrate 1200. The first conductive pattern 1210 is disposed in the central portion of the substrate 1200 in the left-right direction. The pair of second conductive patterns 1220 are disposed at both ends of the substrate 1200 in the left-right direction.

[0065] The joint 1300 is a conductive joint formed of a conductive material. The conductive material may be, for example, a metal (sintered silver, gold-tin (Au-Sn) solder, tin-silver-copper (Sn-Ag-Cu) solder, etc.) or a resin containing a metal (e.g., silver) filler.

[0066] The bonding portion 1300 bonds the light-emitting chip 1100 to the first conductive pattern 1210 of the substrate 1200, and electrically connects the lower surface 1102 of the light-emitting chip 1100 to the first conductive pattern 1210. Specifically, the upper surface of the bonding portion 1300 is bonded to the lower surface 1102 of the light-emitting chip 1100 in a surface contact state. The lower surface of the bonding portion 1300 is bonded to the upper surface of the first conductive pattern 1210 in a surface contact state. Thus, the cathodes of the plurality of surface light-emitting elements 1110 are electrically connected to the first conductive pattern 1210 via the bonding portion 1300.

[0067] A wire 1250 electrically connects the connection area 1105 of the light-emitting chip 1100 to the second conductive pattern 1220 on the substrate 1200. One end of the wire 1250 is engaged with the connection area 1105 of the light-emitting chip 1100, and the other end of the wire 1250 is engaged with the second conductive pattern 1220. In this embodiment, the left connection area 1105 and the left second conductive pattern 1220 are electrically connected by a plurality of wires 1250 arranged at intervals in the front-back direction. Similarly, the right connection area 1105 and the right second conductive pattern 1220 are electrically connected by a plurality of wires 1250 arranged at intervals in the front-back direction. The wires 1250 are, for example, made of gold.

[0068] A-3. Structure for suppressing short circuits between the cathode and conductive components of the surface light-emitting element 1110:

[0069] In this embodiment, the light source 122 has a structure for suppressing the cathode of the surface light-emitting element 1110 from being short-circuited to a conductive component via the junction 1300. The conductive component is, for example, a wire 1250, a second conductive pattern 1220, or other conductive components located around the light-emitting chip 1100.

[0070] Specifically, the light source 122 has a protective portion 1310. The protective portion 1310 is a non-conductive joint formed of a non-conductive material. The non-conductive material is, for example, resin. Alternatively, to improve heat dissipation, the non-conductive material may be a composite material formed by mixing a filler made of a material with higher thermal conductivity than resin (such as ceramic materials like alumina (Al2O3) or aluminum nitride (AlN)) with resin.

[0071] The protective portion 1310 covers the outer peripheral surface S1 of the joint portion 1300 throughout the entire circumference. That is, the outer peripheral surface S1 of the joint portion 1300 is not exposed to the outside throughout the entire circumference.

[0072] The protective part 1310 has a support part 1312 and a protrusion 1314.

[0073] The support portion 1312 is the part of the protective portion 1310 sandwiched between the light-emitting chip 1100 and the first conductive pattern 1210 (substrate 1200). Specifically, in this embodiment, when viewed in the vertical direction, the outline of the joint portion 1300 is located circumferentially inside the outline of the light-emitting chip 1100 (see reference). Figure 2 Therefore, the periphery of the lower surface 1102 of the light-emitting chip 1100 is separated from the first conductive pattern 1210 in the vertical direction. The support portion 1312 of the protective portion 1310 is disposed in the gap between the periphery of the lower surface 1102 of the light-emitting chip 1100 and the first conductive pattern 1210. The upper surface of the support portion 1312 contacts the periphery of the lower surface 1102 of the light-emitting chip 1100, and the lower surface of the support portion 1312 contacts the first conductive pattern 1210. In this way, the support portion 1312 supports the periphery of the lower surface 1102 of the light-emitting chip 1100. The support portion 1312 is disposed around the entire circumference of the joint portion 1300. In addition, the support portion 1312 contacts the outer peripheral surface S1 of the joint portion 1300 around the entire circumference. The vertical view is an example of a view orthogonal to the light-emitting chip 1100. The direction orthogonal to the light-emitting chip 1100 refers to the direction orthogonal to the light-emitting surface of the light-emitting chip 1100.

[0074] The protrusion 1314 is the portion of the protective portion 1310 that protrudes outward from the light-emitting chip 1100 when viewed in the vertical direction. The area of ​​the exposed surface S2 of the protrusion 1314 is larger than the contact area (area of ​​the outer peripheral surface S1) between the protective portion 1310 (support portion 1312) and the joint portion 1300. Specifically, the protrusion 1314 covers the outer peripheral surface S1 of the light-emitting chip 1100 throughout its entire circumference. Therefore, the periphery of the light-emitting chip 1100 is protected by the protrusion 1314. The exposed surface S2 of the protrusion 1314 is a tapered surface that slopes outward from the periphery as it approaches the substrate 1200. In this way, since the exposed surface S2 of the protrusion 1314 is large, the heat dissipation of the protective portion 1310 is high.

[0075] A-4. Manufacturing method of light source 122:

[0076] Figure 4 This is a flowchart illustrating a portion of the manufacturing process of the light source 122. For example... Figure 4 As shown, a substrate 1200 with a first conductive pattern 1210 and a second conductive pattern 1220 is prepared (S1110).

[0077] Next, a first bonding material is coated between the lower surface 1102 of the light-emitting chip 1100 and the first conductive pattern 1210 of the substrate 1200, and a second bonding material is coated around the first bonding material (S1120). The first bonding material is formed of a conductive bonding material (e.g., an adhesive resin paste or solder containing a conductive material), and upon curing, the aforementioned bonding portion 1300 is formed. The second bonding material is formed of a non-conductive bonding material (e.g., an adhesive resin paste not containing a conductive material), and upon curing, the aforementioned protective portion 1310 is formed.

[0078] For example, the light-emitting chip 1100 can be soldered to the first conductive pattern 1210 using a first bonding material as solder, and then a second bonding material can be coated around the first bonding material. Alternatively, a first bonding material and a second bonding material with adhesive properties can be coated onto the first conductive pattern 1210, and then the light-emitting chip 1100 can be disposed on the first bonding material and the second bonding material. The order in which the first bonding material and the second bonding material are coated onto the first conductive pattern 1210 is arbitrary. By distributing the second bonding material around the first bonding material, it is possible to prevent the first bonding material from overflowing outwards or climbing onto the outer peripheral surface of the light-emitting chip 1100.

[0079] Next, the first bonding material and the second bonding material are cured to form a conductive bonding portion 1300 located between the lower surface 1102 of the light-emitting chip 1100 and the substrate 1200 (first conductive pattern 1210) and a protective portion 1310 (S1130) covering the outer peripheral surface S1 of the bonding portion 1300.

[0080] Next, the upper surface 1101 (connection area 1105) of the light-emitting chip 1100 is electrically connected to the second conductive pattern 1220 via the wire 1250 (S1140). Here, assuming that there is no non-conductive second bonding material (protective part 1310 if cured) around the conductive first bonding material (bonding portion 1300 if cured), the wire 1250 may short-circuit by contacting the first bonding material during connection. However, in this embodiment, the second bonding material is disposed around the first bonding material, and the connection area 1105 side of the outer peripheral surface S1 of the first bonding material is not exposed to the outside. Therefore, short-circuiting between the wire 1250 and the first bonding material during connection can be suppressed. Furthermore, the curing period of at least one of the first and second bonding materials can be before, after, or during the S1140 process. Afterwards, the light source 122 is manufactured by performing a prescribed post-processing.

[0081] A-5. Effects of this implementation method:

[0082] As explained above, in the light source 122 of this embodiment, the non-conductive protective portion 1310 covers the outer peripheral surface S1 of the conductive joint portion 1300 (see reference). Figure 2 and Figure 3 Therefore, compared to a structure where the protective portion 1310 is not disposed on the outer periphery of the joint 1300, it is possible to prevent the cathode of the surface light-emitting element 1110 from short-circuiting with a conductive component, such as the anode of the surface light-emitting element 1110, via the joint 1300. Furthermore, in this embodiment, the protective portion 1310 covers the entire circumference of the outer peripheral surface S1 of the joint 1300. Therefore, it is possible to effectively prevent the cathode of the surface light-emitting element 1110 from short-circuiting with a conductive component via the joint 1300.

[0083] Assuming in Figure 3 Without the support portion 1312 in the light source 122 shown, the periphery of the lower surface 1102 of the light-emitting chip 1100 is suspended from the substrate 1200. As a result, the light-emitting chip 1100 is easily damaged when a load is applied to its periphery. In contrast, in this embodiment, the protective portion 1310 has a support portion 1312 sandwiched between the light-emitting chip 1100 and the first conductive pattern 1210 (substrate 1200). Thus, according to this embodiment, compared to a structure without the support portion 1312, it is possible to suppress, for example, the damage to the light-emitting chip 1100 caused by applying a load to it.

[0084] In this embodiment, the protective portion 1310 contacts the outer peripheral surface S1 of the joint portion 1300, which functions as a conductive path. Furthermore, the area of ​​the exposed surface S2 of the protrusion 1314 is larger than the contact area (area of ​​the outer peripheral surface S1) between the joint portion 1300 and the support portion 1312. Therefore, according to this embodiment, heat generated in the joint portion 1300 can be effectively released via the protective portion 1310.

[0085] B. Second implementation method:

[0086] Figure 5 This is an explanatory diagram showing the upper surface structure of the light source 122a in this second embodiment. Figure 6 It means Figure 5 The diagram illustrates the cross-sectional structure of the light source 122 at position VI-VI. Hereinafter, descriptions of structures in the measuring apparatus 110 of the second embodiment that are identical to those in the measuring apparatus 110 of the first embodiment will be omitted as appropriate.

[0087] B-1. Structure for suppressing short circuits between the cathode and conductive components of the surface light-emitting element 1110:

[0088] In this second embodiment, the structure of the light source 122a differs from that of the light source 122 in the first embodiment described above. Specifically, the difference between the light source 122a and the light source 122 is that the light source 122a does not have a protective portion 1310. However, in this second embodiment, the light source 122a also has a structure for suppressing the short circuit between the cathode of the surface light-emitting element 1110 and the conductive component via the junction portion 1300.

[0089] The light source 122a also satisfies the following first condition.

[0090] <First condition>

[0091] When viewed vertically, the outer peripheral surface S1 of the junction 1300 is located closer to the inner side than the outer edge of the light-emitting chip 1100 (see reference). Figure 5 The connection portion 1252 between the wire 1250 and the upper surface 1101 (connection area 1105) of the light-emitting chip 1100 is located inside the outer peripheral surface S1 of the joint portion 1300.

[0092] Specifically, such as Figure 6 As shown, the first distance D1 from the central axis C of the light-emitting chip 1100 to the outer peripheral surface S1 of the joint 1300 is shorter than the second distance D2 from the central axis C to the outer peripheral surface of the light-emitting chip 1100. Furthermore, the third distance D3 from the central axis C to the connecting portion 1252 is shorter than the first distance D1.

[0093] The light source 22a also satisfies the following second condition.

[0094] <Second Condition>

[0095] When viewed from above and below, the periphery of the light-emitting area 1103 of the light-emitting chip 1100 is located inside the outer peripheral surface S1 of the junction 1300, and the imaginary surface L passing through the edge of the light-emitting area 1103 and the edge of the outer peripheral surface S1 of the junction 1300 has an inclination angle θ of more than 45 degrees with respect to the vertical direction.

[0096] Specifically, such as Figure 6 As shown, the fourth distance D4 from the central axis C to the periphery of the light-emitting region 1103 is shorter than the first distance D1. The inclination angle θ of the aforementioned imaginary surface L relative to the central axis C is greater than 45 degrees.

[0097] B-2. Effects of this implementation method:

[0098] As explained above, in the light source 122a of this embodiment, when viewed in the vertical direction, the outer peripheral surface S1 of the joint 1300 is located inside the outer edge of the light-emitting chip 1100 (see reference). Figure 5(First condition). Therefore, for example, compared to a structure where the junction 1300 extends outward from the light-emitting chip 1100, it is possible to suppress the cathode of the surface light-emitting element 1110 from short-circuiting with the conductive component via the junction 1300. Moreover, in this embodiment, when viewed in the vertical direction, the outer edge of the first conductive pattern 1210 is also located inward from the outer edge of the light-emitting chip 1100 (see reference). Figure 6 ).

[0099] In this embodiment, the connection portion 1252 between the wire 1250 and the upper surface 1101 of the light-emitting chip 1100 is located inside the outer peripheral surface S1 of the junction portion 1300 (first condition). According to this embodiment, for example, compared to a structure where the connection portion 1252 is located outside the outer peripheral surface S1 of the junction portion 1300, it is possible to suppress damage to the light-emitting chip 1100 caused by applying a load to the connection portion 1252 of the light-emitting chip 1100.

[0100] In this embodiment, the periphery of the light-emitting region 1103 of the light-emitting chip 1100 is located inside the outer peripheral surface S1 of the junction 1300, and the inclination angle θ formed by the imaginary surface L passing through the edge of the light-emitting region 1103 and the edge of the outer peripheral surface S1 of the junction 1300 with respect to the vertical direction is 45 degrees or more (second condition). The radiation angle of the heat generated in the light-emitting region 1103 diffusing towards the lower surface 1102 of the light-emitting chip 1100 is 45 degrees or less with respect to the central axis C. Therefore, according to this embodiment, for example, compared with the structure described above where the inclination angle θ is less than 45 degrees, the heat generated in the light-emitting region 1103 can be effectively released to the outside through the junction 1300.

[0101] C. Variations:

[0102] The technology disclosed in this specification is not limited to the above-described embodiments, and can be modified in various ways without departing from its spirit, for example, the following modifications are also possible.

[0103] The structure of the measuring device 110 and the light sources 122 and 122a in the above embodiments is just one example and can be modified in various ways. For example, in the above embodiments, the light source 122 and 122a are provided with multiple surface light-emitting elements 1110 as examples, but the light source may also be a structure provided with a single surface light-emitting element.

[0104] In the above embodiment, a pair of connection regions 1105 arranged left and right are disposed on the upper surface 1101 of the light-emitting chip 1100, but it is also possible to have a connection region 1105 disposed only on either the left or right side. Additionally, in the above embodiment, a pair of second conductive patterns 1220 are formed on the substrate 1200, but it is also possible to have only one of the pair of second conductive patterns 1220 disposed on the substrate. In the above embodiment, the connection regions 1105 and the second conductive patterns 1220 are electrically connected through multiple wires 1250, but the connection regions 1105 and the second conductive patterns 1220 can also be electrically connected through a single wire 1250.

[0105] In the first embodiment described above, the protective portion 1310 has a bonding function that bonds the light-emitting chip 1100 to the substrate 1200 (first conductive pattern 1210), but it may also not have this bonding function. For example, the protective portion 1310 may be fixedly disposed on the substrate 1200 without being bonded to the light-emitting chip 1100. In this structure, it is preferable that the protective portion 1310 contacts the light-emitting chip 1100, but it may also not contact the light-emitting chip 1100 and instead only cover the lower part of the outer peripheral surface S1 of the bonding portion 1300. As long as the protective portion 1310 covers a portion of the outer peripheral surface S1 of the bonding portion 1300, it is possible to prevent the cathode of the surface light-emitting element 1110 from short-circuiting with conductive components such as the wire 1250 through the bonding portion 1300.

[0106] In the first embodiment described above, the protective portion 1310 covers the entire circumference of the outer peripheral surface S1 of the joint portion 1300, but the protective portion 1310 only needs to cover at least a portion of the outer peripheral surface S1 of the joint portion 1300. For example, the protective portion 1310 may also be a structure that only covers the connection region 1105 side of the outer peripheral surface S1 of the joint portion 1300. As a result, it is possible to effectively suppress the cathode of the surface light-emitting element 1110 from short-circuiting with the wire 1250 via the joint portion 1300.

[0107] In the first embodiment described above, when viewed in the vertical direction, at least a portion of the outline of the joint 1300 may be located outside the outline of the light-emitting chip 1100. Furthermore, in the first embodiment described above, the protective portion 1310 may also be a structure without either the support portion 1312 or the protrusion 1314. Alternatively, at least one of the support portion 1312 and the protrusion 1314 may be disposed only in a portion surrounding the joint 1300.

[0108] In the first embodiment described above, the protective portion 1310 may also be a structure that does not contact the joint portion 1300. However, if the protective portion 1310 is in contact with the joint portion 1300, the heat dissipation efficiency in releasing heat generated in the joint portion 1300 due to energization to the outside via the protective portion 1310 can be improved. In the first embodiment described above, the area of ​​the exposed surface S2 of the protrusion 1314 may also be less than or equal to the contact area between the joint portion 1300 and the protective portion 1310. Furthermore, the exposed surface S2 of the protrusion 1314 is not limited to a conical surface; it may be a plane along the vertical direction or a curved surface.

[0109] In the second embodiment described above, the structure may also not satisfy either the first condition or the second condition. Furthermore, when viewed vertically, the outer edge of the first conductive pattern 1210 may be located further outward than the outer edge of the light-emitting chip 1100.

[0110] In the above embodiments, the forming material of each component is just one example, and it can also be formed from other materials.

[0111] D. Third implementation method:

[0112] Hereinafter, a third embodiment of the present disclosure will be described with reference to the accompanying drawings. Furthermore, descriptions of components having the same reference numerals as those already described in the first embodiment will be appropriately omitted.

[0113] D-1. Structure of measuring device 210:

[0114] Figure 7 This is a block diagram that schematically illustrates the structure of the measuring device 210 in this embodiment. (As shown...) Figure 7 As shown, the measuring device 210 includes a projector 220 that illuminates the object W with emitted light L1 (e.g., a laser beam) and a receiver 230 that receives the reflected light L2 (return light) from the object W, and functions as a flash lidar. The measuring device 210 measures the difference between the moment the projector 220 emits the emitted light L1 and the moment the receiver 230 receives the reflected light L2 (the time of flight of the laser, hereinafter referred to as "TOF") to obtain information related to the object W.

[0115] The measuring device 210 is mounted, for example, on a vehicle equipped with AD or ADAS (not shown). The measuring device 210 assists in detecting objects such as people and other vehicles while the vehicle is in motion, and provides other devices and users with various information useful for ensuring the safety of the vehicle driver and people around the vehicle, and reducing damage to objects around the vehicle while the vehicle is in motion.

[0116] The projector 220 has a light source 222, a projection optical system 224, a projection control device 226, and a current source 228.

[0117] Light source 222 includes a light-emitting source having one or more semiconductor lasers (not shown), or an array of one or more semiconductor lasers (e.g., a semiconductor laser array obtained by configuring the semiconductor lasers in a linear (one-dimensional) or planar (two-dimensional) configuration). The semiconductor lasers are, for example, external resonator type vertical-plane light-emitting lasers or laser diodes. In this embodiment, light source 222 has one semiconductor laser 223.

[0118] Current source 228 supplies current corresponding to the control signal input from light emission control device 226 to semiconductor laser 223 constituting light source 222. For example, current source 228 supplies periodic square wave current to semiconductor laser 223 to switch the current flowing through semiconductor laser 223 on and off.

[0119] The projection control device 226 generates a control signal for the current source 228 and inputs it into the current source 228, thereby controlling the current (drive current) supplied from the current source 228 to the semiconductor laser 223. The projection control device 226 inputs a signal indicating the projection moment of the semiconductor laser 223 to the TOF measuring device 40. For example, the projection control device 226 performs periodic switching control of the current flowing through the semiconductor laser 223, thereby causing the semiconductor laser 223 to periodically and repeatedly emit light.

[0120] The projection optical system 224 adjusts the distribution of the emitted light L1, for example, by imparting optical effects (refractive, scattering, diffractive, etc.) to the light emitted from the light source 222. The projection optical system 224 is constructed, for example, using various lenses such as collimating lenses, mirrors, and other optical components.

[0121] The light receiver 230 includes a light receiving section 232, a filter 233, and a light receiving optical system 234.

[0122] The light-receiving optical system 234 focuses the reflected light L2 onto the light-receiving part 232. The reflected light L2 is the light reflected back from the object being measured, such as the object W, by the emitted light L1 from the projector 220. The light-receiving optical system 234 is constructed using various lenses such as condenser lenses and optical components such as mirrors.

[0123] The light-receiving unit 232 is a light source having one or more light-receiving elements (not shown), or an array of one or more light-receiving elements (e.g., an array of light-receiving elements arranged in a linear (one-dimensional) or planar (two-dimensional) configuration). The light-receiving elements are, for example, photodiodes, SPADs (Single Photon Avalanche Diodes), balanced photodetectors, etc. The light-receiving unit 232 generates a current (hereinafter referred to as "photocurrent") corresponding to the intensity of the reflected light L2 by photoelectric conversion of the reflected light L2 incident from the light-receiving optical system 234. The light-receiving unit 232 inputs a signal indicating the moment when the light-receiving element constituting the light-receiving unit 232 receives the reflected light L2 (hereinafter referred to as "photoreceiving moment") and the photocurrent generated by the light-receiving element to the TOF measuring device 40.

[0124] Filter 233 is a wavelength filter that allows laser light of a specific bandpass to pass through; for example, it is a bandpass filter. The specific bandpass of filter 233 will be described later. Filter 233 is disposed between the light-receiving optical system 234 and the light-receiving unit 232.

[0125] The measuring device 210 also includes a TOF measuring device 40, a controller 42, and a communication interface (I / F) 50. Information generated by the controller 42 is provided (sent) to various application devices 60 via the communication I / F 50.

[0126] D-2. Specific bandpass of filter 233:

[0127] The specification band B is shown in the specification sheet of semiconductor laser 223. The specification band B is a pre-conceived deviation range (bandwidth) of the wavelength of the laser emitted (outgoing light L1) from semiconductor laser 223. The specification band B is specified, for example, based on the manufacturing tolerances of semiconductor laser 223.

[0128] Figure 8 This is an explanatory diagram representing the specified wavelength band B of the semiconductor laser 223. Figure 8 The horizontal axis represents the wavelength of light, the left vertical axis represents the laser intensity of the laser emitted by semiconductor laser 223 (outgoing light L1), and the right vertical axis represents the filter transmittance of filter 233 (described later). Figures 10 to 12 (The same applies). Figure 8 Curve G1 represents the results of laser intensity measurements using multiple semiconductor lasers 223 (described later). Figures 10 to 12 (The same applies). According to curve G1, for multiple semiconductor lasers 223, the peak wavelengths of the laser intensity exhibited by the peak wavelengths are different from each other. That is, for multiple semiconductor lasers 223, there is a deviation in the wavelength (peak wavelength) of the laser. The defined band B is the band that includes the deviation range of the pre-conceived peak wavelength for the semiconductor lasers 223.

[0129] Figure 8 Curve G2 represents the filter transmittance (described later). Figure 11 and Figure 12 (The same applies). Figure 8 The reference numeral H in the accompanying drawings indicates the bandpass H of the comparative example filter. The bandpass H of the comparative example filter is set to include a bandwidth encompassing a predetermined wavelength band B. Therefore, laser light emitted by all semiconductor lasers 223 whose peak wavelengths fall within the predetermined wavelength band B can pass through the comparative example filter and be received by the light-receiving unit 232. However, the bandpass H of the comparative example filter is set to include a wider bandwidth encompassing the predetermined wavelength band B. Therefore, not only laser light emitted by the semiconductor laser 223, but also interfering light such as sunlight with wavelengths different from those of the semiconductor laser 223, also passes through the comparative example filter and is received by the light-receiving unit 232. As a result, the measurement accuracy of the measuring device 210 (e.g., a shorter measurable distance) may decrease.

[0130] In contrast, in the measuring apparatus 210 of this embodiment, the specific bandpass of the filter 233 is a portion of a predetermined wavelength band B. The specific bandpass of the filter 233 includes the peak wavelength of the laser emitted by the semiconductor laser 223 installed in the measuring apparatus 210. Furthermore, the bandwidth of the specific bandpass of the filter 233 is less than or equal to half the bandwidth of the predetermined wavelength band B.

[0131] D-3. Method for manufacturing the measuring device 210:

[0132] Figure 9 This is a flowchart showing a portion of the manufacturing process of the measuring device 210. Figure 10 This is an explanatory diagram showing the classification of the specified band B. For example... Figure 10 As shown, the specified band B is divided into three wavelength classes f1 to f3. These three wavelength classes f1 to f3 are, for example, bands obtained by equally dividing the specified band B into three segments.

[0133] like Figure 9 As shown, the peak wavelength of the semiconductor laser 223 selected from the plurality of semiconductor lasers 223 (hereinafter, sometimes referred to as "selected semiconductor laser 223") is measured (S2110). For example, the selected semiconductor laser 223 is made to emit light, and the peak wavelength of the laser emitted by the selected semiconductor laser 223 is measured by a known wavelength measuring instrument (optical wavelength meter, etc.).

[0134] Next, it is determined which wavelength class the peak wavelength of the selected semiconductor laser 223 belongs to (S2120). Based on the measurement results in S2110, it is determined which of the three wavelength classes f1 to f3 the selected semiconductor laser 223 belongs to. Furthermore, at least a portion of the steps in S2110 and S2120 can be performed manually or automatically using machinery based on robots or the like.

[0135] Next, a filter 233 (hereinafter, sometimes referred to as "corresponding filter 233") with a specific bandpass corresponding to the wavelength class to which the selected semiconductor laser 223 belongs is prepared (S2130). Figure 11 This is an explanatory diagram showing a specific bandpass H1 for the first wavelength class f1. Figure 12 This is an explanatory diagram showing a specific bandpass H2 for the second wavelength class f2. For example... Figure 11 As shown, when the peak wavelength of the selected semiconductor laser 223 belongs to the first wavelength class f1, the specific bandpass H1 of the filter 233 is a frequency band with a bandwidth narrower than the specified band B and including the first wavelength class f1. Figure 12 As shown, when the peak wavelength of the semiconductor laser 223 is selected to be in the second wavelength class f2, the specific bandpass H2 of the filter 233 is a frequency band with a bandwidth narrower than the specified band B and including the second wavelength class f2.

[0136] Next, the selected semiconductor laser 223 is placed on the projector 220, and the corresponding filter 233 is placed on the receiver 230 (S2140). After that, the remaining assembly processes are performed, and the manufacturing of the measuring device 210 is completed. According to this manufacturing method, the measuring device 210 with noise suppression can be manufactured more effectively.

[0137] D-4. Effects of this implementation method:

[0138] As explained above, in the measuring apparatus 210 of this embodiment, the specific bandpass of the filter 233 is a portion of a predetermined wavelength band B. The specific bandpass of the filter 233 includes the peak wavelength of the laser emitted by the semiconductor laser 223 installed in the measuring apparatus 210. Therefore, according to this embodiment, compared to a structure where the specific bandpass of the filter 233 is the same as that of the predetermined wavelength band B, the influence of noise such as sunlight can be suppressed, thereby improving the measurable distance.

[0139] In this embodiment, the bandwidth of a specific bandpass of filter 233 is less than half the bandwidth of the specified band B. This allows for more effective suppression of noise.

[0140] E. Variation:

[0141] The technology disclosed in this specification is not limited to the above-described embodiments, and can be modified in various ways without departing from its spirit, for example, the following modifications are also possible.

[0142] The structure of the measuring device 210, the projector 220, and the receiver 230 in the above embodiments is just one example and can be modified in various ways. For example, in the above embodiments, the filter 233 is disposed between the light-receiving optical system 234 and the light-receiving part 232, but it can also be disposed in front of the light-receiving optical system 234, or it can be assembled as a component of the light-receiving optical system 234.

[0143] In the above embodiment, the measuring device 210 has a structure comprising a semiconductor laser 223 and a filter 233, but it is not limited to this and may also have a structure comprising multiple semiconductor lasers and multiple filters corresponding to each of the multiple semiconductor lasers. For example, the projector 220 may have a first semiconductor laser and a second semiconductor laser, and the projector 220 may have a first filter that allows the laser emitted by the first semiconductor laser to pass through and a second filter that allows the laser emitted by the second semiconductor laser to pass through. In this case, it is preferable that the predetermined wavelengths of the first semiconductor laser and the second semiconductor laser are the same, and the specific bandpasses of the first filter and the second filter are different from each other. Specifically, when the peak wavelength of the first semiconductor laser belongs to the first wavelength class f1, the specific bandpass of the first filter is a specific bandpass H1 corresponding to the first wavelength class f1. When the peak wavelength of the second semiconductor laser belongs to the second wavelength class f2, the specific bandpass of the first filter is a specific bandpass H2 corresponding to the first wavelength class f2. Thus, in the measurement of the lasers based on the first semiconductor laser and the second semiconductor laser respectively, the influence of noise can be suppressed, for example, the measurable distance can be improved.

[0144] In the above embodiment, the bandwidth of the specific bandpass of filter 233 is less than 1 / 2 of the bandwidth of the specified band B, but is not limited thereto. For example, it may be less than 1 / 3 or less of the bandwidth of the specified band B, or less than 1 / 5 of the bandwidth of the specified band B. The lower limit of the bandwidth of the specific bandpass of filter 233 is not particularly limited. For example, it may be more than 1 / 100 or more of the bandwidth of the specified wavelength band B.

[0145] In the manufacturing method of the measuring device 210 of the above embodiment, the specified wavelength band B is equally divided into three wavelength classes f1 to f3. However, it is not limited to this; the specified wavelength band B may also be divided into two wavelength classes, or even four or more wavelength classes. Furthermore, for at least two of the multiple wavelength classes, the bandwidth may be different from each other.

[0146] In the above embodiments, the forming material of each component is just one example, and it can also be formed from other materials.

[0147] The various embodiments disclosed in this specification can be appropriately combined, and the structures obtained by such combinations are also included in this disclosure. For example, the light source 222 in the measuring device 210 in the third embodiment can also be the light source 122 in the first embodiment or the light source 122a in the second embodiment.

[0148] This application is based on Japanese Patent Application No. 2023-116439 and Japanese Patent Application No. 2023-116441, filed on July 18, 2023, the contents of which are incorporated herein by reference.

Claims

1. A light source, characterized by Possessing: a light emitting chip configured with a surface light emitting element, and having a first surface electrically connected to a cathode of the surface light emitting element and a second surface electrically connected to an anode of the surface light emitting element; a substrate formed with a first conductive pattern and a second conductive pattern; a conductive bonding portion bonding the first surface of the light emitting chip and the first conductive pattern; and a wire electrically connecting the second surface of the light emitting chip and the second conductive pattern, wherein the light source possesses a non-conductive protection portion disposed on the outer periphery side of the bonding portion and covering at least a portion of the outer peripheral surface of the bonding portion.

2. The light source according to claim 1, wherein a connecting portion electrically connected to the wire is provided on the peripheral portion of the second surface of the light emitting chip, the protection portion covers the outer peripheral surface on the connecting portion side in the bonding portion.

3. The light source according to claim 1, wherein the protection portion covers the entire periphery of the outer peripheral surface of the bonding portion.

4. The light source according to any one of claims 1 to 3, wherein at least a portion of the outer peripheral surface of the bonding portion is located inward of the outer edge of the light emitting chip when viewed from a direction orthogonal to the light emitting chip, the protection portion has a supporting portion sandwiched between the light emitting chip and the substrate.

5. The light source according to any one of claims 1 to 3, wherein the protection portion is in contact with the outer peripheral surface of the bonding portion, and the area of the exposed surface of the protection portion is larger than the contact area of the protection portion and the bonding portion.

6. An assay device characterised in that, Possessing: a light projector possessing the light source according to any one of claims 1 to 3; and a light receiver receiving light output from the light projector and reflected by a measurement object.

7. A method of manufacturing a light source, the light source having: a light emitting chip provided with a surface light emitting element, and having a first surface electrically connected to a cathode of the surface light emitting element and a second surface electrically connected to an anode of the surface light emitting element; and a substrate formed with a first conductive pattern and a second conductive pattern, the manufacturing method of the light source is characterized by comprising: a process of applying a first conductive bonding material between the first surface of the light emitting chip and the first conductive pattern of the substrate, and applying a non-conductive second bonding material to at least a portion of the periphery of the first bonding material; a process of electrically connecting the second surface of the light emitting chip and the second conductive pattern by a wire; and a process of curing the first bonding material and the second bonding material to form a conductive bonding portion between the first surface of the light emitting chip and the substrate, and a protection portion covering at least a portion of the outer peripheral surface of the bonding portion.

8. A light source, characterized by Possessing: a light emitting chip configured with a surface light emitting element, and having a first surface electrically connected to a cathode of the surface light emitting element and a second surface electrically connected to an anode of the surface light emitting element; a substrate formed with a first conductive pattern and a second conductive pattern; a conductive bonding portion bonding the first surface of the light emitting chip and the first conductive pattern; and a wire electrically connecting the second surface of the light emitting chip and the second conductive pattern, wherein at least a part of the outer circumferential surface of the bonding portion is located inward of the outer edge of the light emitting chip when viewed in a first direction orthogonal to the light emitting chip, the connecting portion of the lead wire to the second surface is located inward of the outer circumferential surface of the bonding portion.

9. The light source according to claim 8, wherein a peripheral edge of a light emitting region of the light emitting chip is located inward of the outer circumferential surface of the bonding portion when viewed in the first direction, an inclination angle θ of an imaginary plane passing through an edge line of the light emitting region and an edge line of the outer circumferential surface of the bonding portion with respect to the first direction is 45 degrees or more.

10. An assay device characterised in that, provided with: a light projector having a semiconductor laser that emits laser light; and a light receiver having a filter that passes a specific band of laser light among laser light output from the light projector and reflected by a measurement target, and a light receiving element that receives the laser light that has passed through the filter, wherein the specific band of the filter is a part of a prescribed wavelength band prescribed based on a manufacturing variation of the semiconductor laser.

11. The measurement device according to claim 10, wherein the semiconductor laser includes a first semiconductor laser and a second semiconductor laser, the filter includes a first filter that passes laser light emitted by the first semiconductor laser and a second filter that passes laser light emitted by the second semiconductor laser, the prescribed wavelength band of the first semiconductor laser and the second semiconductor laser are the same as each other, the specific band of the first filter and the second filter are different from each other.

12. The measurement device according to claim 10 or 11, wherein a bandwidth of the specific band is 1 / 2 or less of a bandwidth of the prescribed wavelength band.

13. A manufacturing method of a measurement device, The measurement device includes a light projector having a semiconductor laser that emits laser light, and a light receiver having a filter that passes a specific band of the laser light output from the light projector and reflected by a measurement target, and a light-receiving element that receives the laser light that has passed through the filter, wherein the manufacturing method of the measurement device includes: a process of judging which wavelength class among a plurality of wavelength classes prescribed by dividing a prescribed wavelength band prescribed based on a manufacturing variation of a semiconductor laser a selected semiconductor laser selected from among the plurality of semiconductor lasers belongs to; and a process of disposing, at the light receiver, the filter having a specific band corresponding to the wavelength class to which the selected semiconductor laser belongs.

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