IGBT junction temperature on-line measurement method and system, storage medium and electronic equipment

Abstract

The invention discloses an IGBT junction temperature on-line measurement method and system, a storage medium and electronic equipment. The method comprises the steps of collecting a voltage peak value between a power emitter E and an auxiliary emitter e of a to-be-measured IGBT module and a collector current of the to-be-measured IGBT module; and obtaining the junction temperature of the to-be-measured IGBT module according to the voltage peak value and the collector current by using a pre-established junction temperature mathematical model. According to the method, a junction temperature mathematical model established in advance is utilized, the junction temperature of the to-be-measured IGBT module is calculated according to a voltage peak value between a power emitting electrode E and an auxiliary emitting electrode e of the to-be-measured IGBT module and collector current, and non-intrusive and high-precision online temperature monitoring is achieved under the actual operation condition.

Description

Technical Field

[0001] This invention relates to the field of insulated gate bipolar transistor (IGBT) technology, and more particularly to an online measurement method, system, storage medium, and electronic device for IGBT junction temperature. Background Technology

[0002] Measuring the junction temperature of an insulated gate bipolar transistor (IGBT) is crucial for ensuring its reliable operation. Common measurement methods include optical methods, physical contact methods, thermal network modeling methods, and thermoelectric parameter methods (TSEP).

[0003] The aforementioned technologies have the following limitations: 1. Interference with normal operation during measurement: Most static TSEP methods (such as those using saturation voltage Vce(sat)) require injecting a specific measurement current into the power device, which interrupts the normal operation of the system and makes online monitoring difficult. 2. Susceptibility to parasitic parameters: Some dynamic TSEP methods (such as those based on dVce / dt) are highly susceptible to the influence of stray inductance in the main power circuit. These parasitic parameters introduce significant measurement errors, reducing their reliability in practical applications. Summary of the Invention

[0004] This invention aims to at least partially solve one of the technical problems in related technologies. Therefore, one objective of this invention is to propose an online measurement method for IGBT junction temperature, enabling non-invasive, high-precision online temperature monitoring under actual operating conditions.

[0005] The second objective of this invention is to provide an online method for measuring IGBT junction temperature.

[0006] A third objective of this invention is to provide a computer-readable storage medium.

[0007] The fourth objective of this invention is to provide an electronic device.

[0008] To achieve the above objectives, a first aspect of the present invention provides a method for measuring the junction temperature of an IGBT module. The method includes: acquiring the peak voltage between the power emitter E and the auxiliary emitter e of the IGBT module under test and the collector current of the IGBT module under test; and obtaining the junction temperature of the IGBT module under test based on the peak voltage and the collector current using a pre-established junction temperature mathematical model.

[0009] The junction temperature measurement method for an IGBT module according to an embodiment of the present invention utilizes a pre-established mathematical model of junction temperature, based on the peak voltage between the power emitter E and the auxiliary emitter e of the IGBT module under test. and collector current The junction temperature of the IGBT module under test is calculated, enabling non-invasive and high-precision online temperature monitoring under actual operating conditions.

[0010] In addition, the junction temperature measurement method for IGBT modules proposed in the above embodiments of the present invention may also have the following additional technical features: According to an embodiment of the present invention, the process of establishing the junction temperature mathematical model includes: building a junction temperature test platform for the IGBT module and establishing an initial mathematical model; based on the junction temperature test platform of the IGBT module, measuring the peak voltage of the IGBT module under preset junction temperature point and preset collector current conditions to obtain a test dataset; and using the least squares method to fit the test dataset and the initial mathematical model to obtain the junction temperature mathematical model.

[0011] According to an embodiment of the present invention, the junction temperature testing platform for the IGBT module includes: a test IGBT module; an infrared thermal imaging module for real-time measurement of the actual temperature of the test IGBT module; a heating and heat dissipation module, wherein the test IGBT module is disposed on the heating and heat dissipation module, for adjusting the temperature of the test IGBT module to the target temperature according to the actual temperature and the target temperature of the test IGBT module; a driving circuit, wherein the driving terminal of the driving circuit is connected to the gate of the test IGBT module, for providing a PWM signal of a target switching frequency; and a DC power supply, wherein a first terminal of the DC power supply is connected to the collector of the test IGBT module, and a second terminal of the DC power supply is connected to the emitter of the test IGBT module, for providing a target DC bus voltage to the test IGBT module. A load, the first end of which is connected to the first end of the DC power supply, and the second end of which is connected to the collector of the test IGBT module, for adjusting the collector current of the test IGBT module; A voltage probe is used to detect the voltage between the power emitter E and the auxiliary emitter e of the test IGBT module. And the voltage between the collector c and the auxiliary emitter e of the test IGBT module. A current clamp is used to detect the collector current of the IGBT module under test; an oscilloscope is connected to the voltage probe and the current clamp to acquire the voltage. The voltage and the collector current.

[0012] According to an embodiment of the present invention, the process of establishing the junction temperature mathematical model further includes: based on the voltage acquired by the oscilloscope. The voltage The voltage peak value is extracted from the collector current.

[0013] According to one embodiment of the present invention, the initial mathematical model is:

[0014] in, This indicates the peak voltage. This indicates the junction temperature. The collector current is represented by P00, P10, P01, P11 and P02, which represent the coefficients to be calibrated.

[0015] According to one embodiment of the present invention, the junction temperature mathematical model is as follows:

[0016] in, This indicates the junction temperature. Represents the junction temperature function. This indicates the peak voltage. This represents the collector current.

[0017] According to one embodiment of the present invention, the preset junction temperature ranges from 20°C to 150°C, and the preset collector current ranges from 10A to 40A.

[0018] To achieve the above objectives, a second aspect of the present invention provides a junction temperature measurement system for an IGBT module. The system includes: a data acquisition module for acquiring the peak voltage between the power emitter E and the auxiliary emitter e of the IGBT module under test and the collector current of the IGBT module under test; and a calculation module for obtaining the junction temperature of the IGBT module under test based on the peak voltage and the collector current using a pre-established junction temperature mathematical model.

[0019] To achieve the above objectives, a third aspect of the present invention provides a computer-readable storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, it implements the junction temperature measurement method of the IGBT module as described above.

[0020] To achieve the above objectives, a fourth aspect of the present invention provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, it implements the junction temperature measurement method of the IGBT module as described above.

[0021] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0022] Figure 1This is a flowchart of an IGBT junction temperature measurement method according to an embodiment of the present invention; Figure 2 This is a schematic diagram of an IGBT junction temperature measurement circuit according to an embodiment of the present invention; Figure 3 This is an IGBT turn-off waveform diagram according to an embodiment of the present invention; Figure 4 This is an equivalent circuit diagram of an IGBT chip according to an embodiment of the present invention; Figure 5 This is a flowchart of IGBT junction temperature measurement according to a specific embodiment of the present invention; Figure 6 This is a schematic diagram of an IGBT junction temperature measurement system according to an embodiment of the present invention; Figure 7 This is a structural block diagram of an electronic device according to an embodiment of the present invention. Detailed Implementation

[0023] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0024] It should be noted that the thermoelectric parameter method (TSEP) has become a research focus due to its potential for online measurement. Within the TSEP method, Baker et al. (“IGBT junction temperature measurement via peak gate current”, IEEE Trans. Power Electron., 2016) proposed a method to estimate the junction temperature using the peak gate current. Sundaramoorthy et al. (“A study on IGBT junction temperature onlineestimation using gate-emitter voltage at turn off”, Microelectron. Reliab., 2014) used the gate-emitter voltage during the turn-off process as a temperature-sensitive parameter.

[0025] Methods for measuring the junction temperature of insulated-gate bipolar transistors (IGBTs) still suffer from the problem of not considering the influence of changes in operating current. Specifically, related dynamic TSEP schemes are typically modeled under a fixed collector current. However, in practical applications, the operating current of power devices varies drastically with the load, and ignoring this factor will lead to a significant decrease in measurement accuracy.

[0026] To address the aforementioned technical problems, embodiments of the present invention provide an IGBT junction temperature measurement method and system, a storage medium, and an electronic device. The IGBT junction temperature measurement method and system, storage medium, and electronic device of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0027] Figure 1 This is a flowchart of an IGBT junction temperature measurement method according to an embodiment of the present invention. Figure 1 As shown, the junction temperature measurement method for an IGBT module may include: S101, collect the peak voltage between the power emitter E and the auxiliary emitter e of the IGBT module under test and the collector current of the IGBT module under test; S102 uses a pre-established mathematical model of junction temperature to obtain the junction temperature of the IGBT module under test based on the peak voltage and collector current.

[0028] Specifically, a voltage sensor is placed between the power emitter E and the auxiliary emitter e of the IGBT module under test, so as to collect the peak voltage between the power emitter E and the auxiliary emitter e of the IGBT module under test. A current sensor is placed at the collector of the IGBT module under test to collect the collector current of the IGBT module. .

[0029] Using a pre-established mathematical model of junction temperature According to the peak voltage and collector current The junction temperature of the IGBT module under test is obtained. .

[0030] The junction temperature measurement method for IGBT modules in this embodiment of the invention utilizes a pre-established mathematical model of junction temperature, based on the peak voltage between the power emitter E and the auxiliary emitter e of the IGBT module under test. and collector current The junction temperature of the IGBT module under test is calculated, enabling non-invasive and high-precision online temperature monitoring under actual operating conditions.

[0031] Figure 2 The schematic diagram of the core measurement circuit of this invention is shown. Rs1 is the loop parasitic resistance, Ls is the loop parasitic inductance, Rs2 is the gate resistance, Le is the auxiliary emitter parasitic inductance, and LE is the power emitter parasitic inductance.

[0032] Figure 2 The physical locations of the measurement points were clarified, and most importantly, it was pointed out that there is an inherent parasitic inductance between the power emitter (E) and auxiliary emitter (e) inside the IGBT module. This forms the basis of the measurement in this invention. The voltage sensing unit (high-voltage differential probe) is directly connected to these two points to measure their voltage. .

[0033] This invention analyzes the turn-off process of the IGBT module to determine the signal extraction timing. Specifically, see [link to relevant documentation]. Figure 3 . Figure 3 The diagram illustrates the waveforms of the four stages of the IGBT module turn-off process, clarifying the specific timing of signal generation. This invention selects the third stage (t3-t4) as the measurement window, during which the MOSFET channel is pinched off, and the collector current... A sharp decline, producing huge According to the law of electromagnetic induction, this changing current, flowing through the parasitic inductance LeE, will generate an induced voltage: = ×| dt|. The peak value of the induced voltage Directly reflects The maximum value of dt.

[0034] Figure 4 The equivalent circuit of an IGBT chip (IGBT module) is based on the core thermoelectric sensing mechanism rooted in the physical structure and semiconductor characteristics of the IGBT chip. An IGBT chip can be equivalently represented by an integrated structure of a MOSFET and a PNP bipolar transistor, with its on-state current consisting of the electron current generated by the MOSFET channel. ) and the hole current injected by the PNP transistor ( Together, they constitute the collector current, which can ultimately be expressed as:

[0035] in, This represents the current gain of the PNP transistor. For carrier mobility, This refers to the intrinsic gate oxide capacitance. The width of the channel. The length of the channel. This refers to the threshold voltage of the IGBT chip. This refers to the gate-emitter voltage of the IGBT chip. It should be noted that... and The value depends on the structural characteristics of the silicon chip corresponding to the IGBT chip.

[0036] The hybrid structure of IGBT chips makes their dynamic characteristics during turn-off extremely sensitive to temperature changes, specifically manifested in the rate of change of collector current. dt) varies with junction temperature ( The thermoelectric sensitivity characteristic changes significantly with increasing carrier mobility. The fundamental reason for this thermoelectric sensitivity lies in the carrier mobility ( ) in the semiconductor material. A strong negative temperature coefficient, the relationship is as follows:

[0037] In the third stage of the IGBT turn-off process (the rapid current decrease stage, t3~t4), the rate of change of the collector current is... dt is the core physical quantity for junction temperature measurement. Its expression is:

[0038] At this stage, the electron current Change is dominant The main reason for dt is that the MOSFET channel has entered a pinch-off state at this moment, and its conductivity drops sharply, thus rapidly cutting off the electron current that provides the base drive current to the PNP transistor. Despite hole current Therefore, it decays, but the electron current... The change is initial and dominant. Recombination of minority carriers in a PNP transistor is a relatively slow process; therefore, during this rapid change phase, dt is mainly affected dt dominates. Changes during this extremely short transient process have a relatively small impact. The conduction mechanism is as follows: as the chip junction temperature increases, lattice vibrations intensify, leading to enhanced carrier scattering and thus increasing electron mobility. A significant decrease. This results in... The absolute value of dt decreases (i.e., the current drop curve becomes flatter). Although the threshold voltage Vth also has a negative temperature coefficient, its change is much smaller than the change in mobility, and therefore it is a minor factor.

[0039] Ultimately, this was modulated by the junction temperature. dt is the package parasitic inductance between the power terminal and the auxiliary terminal. According to the law of electromagnetic induction:

[0040] The peak voltage induced on it is directly determined. The size of ). Therefore, it can be seen that, The temperature sensitivity does not originate from the inductance itself, but rather indirectly and precisely reflects the change of the intrinsic physical parameter of carrier mobility with temperature. This physical mechanism is very stable and significant, making... This becomes an excellent dynamic thermistor parameter (TSEP). This invention achieves this by monitoring the peak voltage. Establish its (peak voltage) ) and junction temperature and operating current A quantitative mapping model was developed, thus realizing a non-invasive, high-precision junction temperature measurement method suitable for online operating conditions.

[0041] In one embodiment of the present invention, the process of establishing a junction temperature mathematical model may include: A junction temperature testing platform for IGBT modules was built, and an initial mathematical model was established.

[0042] The junction temperature test platform based on IGBT modules measures the peak voltage of IGBT modules under preset junction temperature and preset collector current conditions to obtain test data sets. The least squares method was used to fit the junction temperature mathematical model based on the test dataset and the initial mathematical model.

[0043] In one embodiment of the present invention, the preset junction temperature range is 20℃-150℃, and the preset collector current range is 10A-40A.

[0044] In one embodiment of the present invention, the initial mathematical model is:

[0045] in, Indicates the peak voltage. Indicates the junction temperature. P00, P10, P01, P11 and P02 represent the collector current, and P00, P10, P01, P11 and P02 represent the coefficients to be calibrated.

[0046] Specifically, a junction temperature testing platform for IGBT modules was built. Based on the testing principle, various devices were connected, and the DC bus voltage provided by the DC power supply was set to Vdc = 50V, and the switching frequency fsw = 10kHz. The IGBT modules were heated to the target temperature (e.g., 25°C to 150°C) using heating and cooling modules, and the temperature was monitored and recorded in real time using an infrared thermal imager. Different collector currents were set for the control load. (e.g., 10, 20A, 30A, 40A). Use an oscilloscope to record the voltage during the turn-off process. collector current and voltage Waveform, extract voltage peak Using tools such as Matlab to... , junction temperature and collector current A mathematical model of junction temperature is established by performing polynomial fitting.

[0047] In one embodiment of the present invention, the junction temperature testing platform for the IGBT module includes: Test IGBT module; Infrared thermal imaging module, used to measure the actual temperature of the IGBT module in real time; The heating and heat dissipation module, on which the test IGBT module is mounted, is used to adjust the temperature of the test IGBT module to the target temperature based on the actual temperature and the target temperature of the test IGBT module. The drive circuit, whose drive terminal is connected to the gate of the test IGBT module, is used to provide a PWM signal for the target switching frequency. A DC power supply, with its first terminal connected to the collector of the test IGBT module and its second terminal connected to the emitter of the test IGBT module, is used to provide the target DC bus voltage to the test IGBT module. The load has its first end connected to the first end of the DC power supply, and its second end connected to the collector of the test IGBT module to adjust the collector current of the test IGBT module. A voltage probe is used to detect the voltage between the power emitter (E) and auxiliary emitter (e) of an IGBT module. And test the voltage between the collector (c) and auxiliary emitter (e) of the IGBT module. ; Current clamp is used to detect and test the collector current of an IGBT module; An oscilloscope, connected to a voltage probe and current clamp, is used to acquire voltage data. ,Voltage and collector current.

[0048] In this embodiment, an infrared thermal imager (IR) measures the surface temperature of the IGBT module in real time. A heating and heat dissipation module (such as a heating platform and heat sink) is used to control the temperature of the IGBT module and reduce self-heating errors. Specifically, the heating and heat dissipation module adjusts the temperature of the IGBT module to the target temperature based on the actual temperature and the target temperature. The infrared thermal imager and the heating and heat dissipation module are used to adjust the IGBT module to a preset junction temperature point.

[0049] In this embodiment, the load ensures that the collector current Ic remains constant, and the collector current can also be adjusted by adjusting the load. .

[0050] In this embodiment, the drive circuit provides a PWM signal to the IGBT module for testing, with an adjustable switching frequency (e.g., 10kHz); the DC power supply provides a stable DC bus voltage Vdc (e.g., 50V) to the IGBT module for testing; and the current clamp and voltage probe are used to detect the current signal (collector current). ) and voltage signal (voltage) and voltage The oscilloscope measures the voltage between the collector (c) and emitter (e) of the IGBT module. collector current The voltage between the power emitter (E) and the auxiliary emitter (e) of the IGBT module The waveform.

[0051] Embodiments of the present invention at different collector currents and junction temperature Next, verify the accuracy of the model.

[0052] Example 1: Fixed collector current =20A, variable junction temperature .

[0053] The junction temperature Tj was increased from 25°C to 150°C in 25°C increments, and the measured values ​​were... With junction temperature The relationship is linear, with a goodness of fit > 0.99.

[0054] Example 2: Fixed junction temperature Tj = 65°C, varying collector current .

[0055] collector current From 5A to 30A, With collector current The change in the property values ​​increases and decreases, showing a linear relationship with a goodness of fit >0.99.

[0056] Example 3: Establishing a binary model. This is achieved through fitting multiple sets of data. .

[0057] In one embodiment of the present invention, the process of establishing the junction temperature mathematical model further includes: based on the voltage acquired by the oscilloscope. ,Voltage Combine the collector current with the voltage peak value.

[0058] Specifically, based on the voltage acquired by the oscilloscope ,Voltage and collector current Extracting peak voltage .

[0059] In one embodiment of the present invention, the junction temperature mathematical model is as follows:

[0060] in, Indicates the junction temperature. Represents the junction temperature function. Indicates the peak voltage. This represents the collector current.

[0061] The following describes the IGBT junction temperature measurement process according to an embodiment of the present invention: See Figure 5 The implementation process of this invention includes the following two main stages: Phase 1: Offline calibration and modeling, establishing mathematical models of VeE-peak, Tj, and Ic: Experimental measurements were conducted under different junction temperatures (25°C to 125°C) and different collector currents (5A to 30A). A bivariate quadratic model was established using surface fitting methods. The optimal coefficients P00, P10, P01, P11, and P02 are obtained using the least squares method and stored in the non-volatile memory of the signal processing unit.

[0062] Phase Two: Online Real-Time Junction Temperature Measurement. The measurement process includes: Signal Acquisition: Synchronously acquiring real-time values ​​of VeE-peak and Ic. Data Processing: Calculating the junction temperature using the following algorithm. The calculated junction temperature value will be used for system monitoring and protection.

[0063] The IGBT junction temperature measurement method of this invention has high measurement accuracy. By measuring the induced voltage through the auxiliary-emitter circuit, interference from the main power circuit is effectively avoided. Combined with a binary quadratic mathematical model, high-precision measurement is achieved across the entire temperature range.

[0064] The IGBT junction temperature measurement method of this invention has strong anti-interference ability, utilizes parasitic inductance signal detection, has low signal source impedance, and has significantly better anti-electromagnetic interference ability than traditional main circuit detection methods, and can still maintain reliable measurement in harsh electromagnetic environments.

[0065] The IGBT junction temperature measurement method of this invention is highly practical. It adopts automatic current change rate compensation technology and introduces collector current as a second independent variable to effectively eliminate measurement errors caused by changes in operating current, making the method applicable to real-time monitoring under various load conditions.

[0066] The IGBT junction temperature measurement method of this invention is simple to implement, requires no modification to the existing equipment structure, utilizes the inherent characteristics of the IGBT module to achieve the measurement, and all signal processing can be integrated into a standard driver board, reducing implementation costs and complexity.

[0067] The IGBT junction temperature measurement method of this invention, through a unique signal detection scheme and advanced mathematical modeling method, successfully solves the problems of accuracy, reliability and practicality in IGBT junction temperature measurement, and provides an effective technical means for the reliability management of power electronic systems.

[0068] The IGBT junction temperature measurement method implemented in this invention can overcome the defects of related technologies and can achieve non-invasive, high-precision online temperature monitoring under actual operating conditions.

[0069] It should be noted that parasitic inductance It forms voltage The key is that its value can be extracted using an impedance analyzer or simulation software.

[0070] The junction temperature measurement method for IGBT modules in this embodiment of the invention is applicable to all IGBT or MOSFET modules with auxiliary emitter pins, and is especially applicable to multi-chip parallel modules.

[0071] This invention can acquire voltage peak values ​​in real time via an embedded system. and collector current Substitute into the junction temperature mathematical model to calculate the junction temperature. This enables online monitoring of junction temperature and overheat protection.

[0072] This invention establishes a two-factor junction temperature model: A junction temperature model is established. With peak voltage and collector current Bivariate functional relations This solves the problem of the influence of current changes on temperature measurement results and enables accurate online measurement.

[0073] The embodiments of the present invention achieve non-invasive online measurement. When measuring junction temperature, the embodiments of the present invention do not require modification of the IGBT module itself. Real-time temperature monitoring can be completed in microseconds by simply measuring the auxiliary terminal voltage on the existing driver board.

[0074] In this embodiment of the invention, the voltage measurement location can also be set to replace the parasitic inductance voltage of the emitter with a voltage generated by a similar parasitic inductance in the collector circuit.

[0075] Embodiments of the present invention are not limited to measuring peak voltage ( This can be extended to other features extracted from the voltage waveform, such as rate of change (dVeE / dt), integral area, etc.

[0076] The embodiments of the present invention use and Regarding junction temperature A binary quadratic mathematical model can be used to estimate the temperature. This model can also employ polynomials, lookup tables, or other mathematical methods. Neural networks can also be used to establish... and collector current Regarding junction temperature The relationship.

[0077] The junction temperature measurement method for IGBT modules in this embodiment of the invention solves the following three core problems: (1) It solves the problem that the existing dynamic TSEP method is easily affected by parasitic parameters of the main power circuit, resulting in large measurement errors; (2) It solves the problem that the existing method does not consider the operating current ( (3) The problem of serious accuracy loss in actual variable operating conditions caused by changes; (4) The problem of interference with normal operation of the device caused by the need to inject test current in the static TSEP method.

[0078] Compared with related technologies, the junction temperature measurement method of this invention directly produces the following beneficial effects: high measurement accuracy, strong anti-interference ability, and by selecting the peak value of the induced voltage of the auxiliary emitter circuit ( Using junction temperature (JT) as a temperature-sensitive parameter, this signal originates from its local parasitic inductance, effectively avoiding the complex electromagnetic interference caused by high current and high dv / dt in the main power circuit, resulting in a pure signal and significantly higher temperature measurement accuracy than methods based on main circuit parameters (such as dVce / dt). Applicable to practical variable operating condition applications: This invention establishes a method based on junction temperature (JT) ) and collector current ( A bivariate mathematical model with and as common independent variables. This model can automatically compensate for the impact of changes in operating current on... This invention mitigates the impact of varying load currents, maintaining high-precision temperature measurement results even in complex application scenarios with dynamic load current changes (such as inverters and motor drives), making it highly practical. It achieves truly non-intrusive online monitoring: Utilizing the dynamic voltage signal naturally generated during IGBT turn-off, this invention achieves completely undisturbed, online, and real-time monitoring of IGBT junction temperature without applying any additional test current or altering the device's operating state, facilitating system status monitoring and reliability management.

[0079] This invention performs real-time online measurement of IGBT junction temperature based on dynamic thermoelectric parameters, which has the advantages of high precision, high reliability, ease of installation, and applicability to complex actual working conditions.

[0080] This invention provides a junction temperature measurement system for IGBT modules.

[0081] Figure 6 This is a schematic diagram of an IGBT junction temperature measurement system according to an embodiment of the present invention. Figure 6 As shown, the IGBT junction temperature measurement system 100 may include a data acquisition module 10 and a calculation module 20.

[0082] The acquisition module 10 is used to acquire the peak voltage between the power emitter E and the auxiliary emitter e of the IGBT module under test and the collector current of the IGBT module under test; the calculation module 20 is used to obtain the junction temperature of the IGBT module under test based on the peak voltage and the collector current using a pre-established junction temperature mathematical model.

[0083] It should be noted that other specific embodiments of the IGBT junction temperature measurement system provided in the embodiments of the present invention can be found in other specific embodiments of the IGBT junction temperature measurement method of the above embodiments of the present invention.

[0084] This invention provides a computer-readable storage medium.

[0085] In this embodiment, a computer program is stored on a computer-readable storage medium. When the computer program is executed by a processor, it implements the junction temperature measurement method of the IGBT module as described above.

[0086] This invention provides an electronic device.

[0087] In this embodiment, the electronic device may include a memory and a processor. The memory stores a computer program, and when the computer program is executed by the processor, it implements the junction temperature measurement method of the IGBT module as described above.

[0088] Figure 7 This is a structural block diagram of an electronic device according to an embodiment of the present invention.

[0089] like Figure 7 As shown, the electronic device 500 includes a processor 501 and a memory 503. The processor 501 and the memory 503 are connected, for example, via a bus 502. Optionally, the electronic device 500 may also include a transceiver 504. It should be noted that in practical applications, the transceiver 504 is not limited to one type, and the structure of this electronic device 500 does not constitute a limitation on the embodiments of the present invention.

[0090] Processor 501 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It can implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this invention. Processor 501 may also be a combination that implements computational functions, such as including one or more microprocessor combinations, a combination of a DSP and a microprocessor, etc.

[0091] Bus 502 may include a pathway for transmitting information between the aforementioned components. Bus 502 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. Bus 502 can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 7 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0092] The memory 503 stores a computer program corresponding to the junction temperature measurement method of the IGBT module in the above embodiments of the present invention. This computer program is controlled and executed by the processor 501. The processor 501 executes the computer program stored in the memory 503 to implement the content shown in the foregoing method embodiments.

[0093] Among them, electronic devices 500 include, but are not limited to: mobile terminals such as mobile phones, laptops, digital radio receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), and in-vehicle terminals (such as in-vehicle navigation terminals), as well as fixed terminals such as digital TVs and desktop computers. Figure 7 The electronic device 500 shown is merely an example and should not be construed as limiting the functionality and scope of use of the embodiments of the present invention.

[0094] It should be noted that the logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, and can be specifically implemented in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transmit programs for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include: an electrical connection having one or more wires (electronic device), a portable computer disk drive (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Alternatively, the computer-readable medium may be paper or other suitable media on which the program can be printed, since the program can be obtained electronically, for example, by optically scanning the paper or other medium, followed by editing, interpreting, or otherwise processing as necessary, and then stored in a computer memory.

[0095] It should be understood that various parts of the present invention can be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0096] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0097] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0098] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0099] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0100] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0101] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A method of measuring a junction temperature of an IGBT module, characterized by, The method comprises: collecting a voltage peak value between a power emitter E and an auxiliary emitter e of a to-be-tested IGBT module and a collector current of the to-be-tested IGBT module; obtaining a junction temperature of the to-be-tested IGBT module according to the voltage peak value and the collector current by using a pre-established junction temperature mathematical model.

2. The method of junction temperature measurement of an IGBT module according to claim 1, characterized by, The process of establishing the junction temperature mathematical model comprises: building a junction temperature test platform of the IGBT module and establishing an initial mathematical model; measuring a voltage peak value of the IGBT module under a preset junction temperature point and a preset collector current condition based on the junction temperature test platform of the IGBT module to obtain a test data set; obtaining the junction temperature mathematical model according to the test data set and the initial mathematical model by using a least square method.

3. The method of junction temperature measurement of an IGBT module according to claim 2, characterized by, The junction temperature test platform of the IGBT module comprises: a test IGBT module; an infrared thermal imaging module for measuring an actual temperature of the test IGBT module in real time; a heating and heat dissipation module, wherein the test IGBT module is arranged on the heating and heat dissipation module, and the heating and heat dissipation module is configured to adjust the temperature of the test IGBT module to a target temperature according to the actual temperature of the test IGBT module and the target temperature; a drive circuit, wherein a drive end of the drive circuit is connected with a gate of the test IGBT module, and the drive circuit is configured to provide a PWM signal of a target switching frequency; a direct current power supply, wherein a first end of the direct current power supply is connected with a collector of the test IGBT module, a second end of the direct current power supply is connected with an emitter of the test IGBT module, and the direct current power supply is configured to provide a target direct current bus voltage to the test IGBT module; a load, wherein a first end of the load is connected with the first end of the direct current power supply, and a second end of the load is connected with the collector of the test IGBT module, and the load is configured to adjust the collector current of the test IGBT module; a voltage probe for detecting the voltage between the power emitter E and the auxiliary emitter e of the test IGBT module and the voltage between the collector c and the auxiliary emitter e of the test IGBT module ; a current clamp for detecting the collector current of the test IGBT module. an oscilloscope connected to the voltage probe and the current clamp for acquiring the voltage , the voltage and the collector current.

4. The method of junction temperature measurement of an IGBT module according to claim 3, characterized by, The process of establishing the junction temperature mathematical model further comprises: extracting the voltage peak value from the voltage , the voltage and the collector current, extracted by the oscilloscope.

5. The method of junction temperature measurement of an IGBT module according to claim 2, characterized by, The initial mathematical model is: wherein denotes the voltage peak, denotes the junction temperature, denotes the collector current, P00, P10, P01, P11 and P02 denote coefficients to be calibrated.

6. The method of junction temperature measurement of an IGBT module according to claim 2, characterized by, The junction temperature mathematical model is: wherein, denotes the junction temperature, denotes a junction temperature function, denotes the voltage peak, denotes the collector current.

7. The method of junction temperature measurement of an IGBT module according to claim 2, characterized by, The preset junction temperature ranges from 20℃ to 150℃, and the preset collector current ranges from 10A to 40A.

8. A junction temperature measurement system of an IGBT module, characterized by, The system comprises: a collecting module configured to collect a voltage peak value between a power emitter E and an auxiliary emitter e of a to-be-tested IGBT module and a collector current of the to-be-tested IGBT module; a calculating module configured to obtain a junction temperature of the to-be-tested IGBT module according to the voltage peak value and the collector current by using a pre-established junction temperature mathematical model.

9. A computer readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the junction temperature measurement method of the IGBT module according to any one of claims 1-7.

10. An electronic device comprising a memory, a processor, the memory having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the junction temperature measurement method of the IGBT module according to any one of claims 1-7.

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