Light emitting diode and light emitting device

Abstract

The invention provides a light-emitting diode and a light-emitting device, a semiconductor lamination of the light-emitting diode comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked from bottom to top, the semiconductor lamination forms a plurality of boss structures, and interlaced spacer regions are arranged between the adjacent boss structures. Groove structures are formed in the first semiconductor layer in the spacer regions, the ratio of the sum of the projected areas of the spacer regions to the projected area of the first semiconductor layer is 0.2-0.5, and the ratio of the sum of the projected areas of the groove structures to the projected areas of the spacer regions is 0.2-1. The groove structure of the spacer region can be covered with an insulating layer and a metal material. Therefore, the light field of the light-emitting diode is modulated, on one hand, waveguide cracking of lateral light can be inhibited, emission of lateral light is increased, on the other hand, the proportion of light emitted towards the light-emitting face can be increased, and therefore the light-emitting efficiency is integrally improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor devices, and more specifically, to a light-emitting diode and a light-emitting device. Background Technology

[0002] Light-emitting diodes (LEDs), due to their high reliability, long lifespan, and low power consumption, are widely used in display devices, automotive lighting, and general lighting. Ultraviolet (UV) LEDs are solid-state semiconductor devices that can directly convert electrical energy into ultraviolet light. In recent years, the enormous application value of UV LEDs, especially deep ultraviolet LEDs, has attracted significant attention and become a new research hotspot.

[0003] In existing ultraviolet LED chips, on the one hand, due to the short wavelength of ultraviolet light, its total internal reflection cone angle is smaller than that of conventional light sources, making light extraction more difficult and more prone to lateral light emission. On the other hand, due to the low injection efficiency of its P-type layer (usually an AlGaN layer), a large area of ​​metal layer is often required to cover the front of the chip to increase current conduction, which further increases the proportion of lateral light in the chip. When this part of the lateral light passes through the interface between the epitaxial material and air, waveguide loss is easily formed, causing the light to be unable to escape and to oscillate back and forth inside the epitaxial material, thus causing light loss. Summary of the Invention

[0004] In view of the defects and shortcomings of existing light-emitting diodes, the purpose of this invention is to provide a light-emitting diode and a light-emitting device.

[0005] To achieve the above and other related objectives, the present invention provides a light-emitting diode, which includes at least a substrate and a semiconductor stack. The semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially from bottom to top. The semiconductor stack forms a light-emitting mesa, which includes Q protrusion structures. Adjacent protrusion structures are separated by interleaved spacing regions. The spacing regions are the first semiconductor layer structures exposed after etching the second semiconductor layer and the active layer. The protrusion structures are unetched semiconductor stacks. The interleaved regions are first cross regions. A groove structure is formed in the first semiconductor layer of the spacer region. The groove structure extends from the first semiconductor layer to the substrate and is projected onto the plane where the first semiconductor layer is located. The ratio of the sum of the projected areas of the spacer region to the projected area of ​​the first semiconductor layer is between 0.2 and 0.5. The ratio of the sum of the projected areas of the groove structure to the sum of the projected areas of the spacer region is between 0.2 and 1. Q is a natural number greater than or equal to 2.

[0006] A second aspect of the present invention provides a light-emitting device, which includes a substrate and a plurality of light-emitting units located on the substrate. A circuit layer is formed on the substrate, and the light-emitting units include the light-emitting diodes provided in this application. The light-emitting diodes are electrically connected to the circuit layer via a pad structure.

[0007] As described above, the light-emitting diode and light-emitting device provided by the present invention have at least the following beneficial technical effects: The light-emitting diode of this application forms a boss structure, making the second semiconductor layer discontinuous. This reduces the number of material layers in the second semiconductor layer, decreases light absorption, and improves the light extraction efficiency of the light-emitting diode. Simultaneously, by designing a groove structure in the gap between the boss structures, waveguides that disrupt lateral light can be suppressed, which is beneficial for the emission of lateral light, thereby improving the light extraction efficiency. Attached Figure Description

[0008] Figure 1 The diagram shown is a top view of the light-emitting diode provided in Embodiment 1 of this application.

[0009] Figure 2 Displayed as along Figure 1 A schematic diagram of the cross-sectional structure along the CC direction.

[0010] Figure 3 Displayed as Figure 1 A top view of the central boss structure and the groove structure.

[0011] Figure 4 Displayed as along Figure 3 A magnified schematic diagram of the partial structure of the rectangular frame S.

[0012] Figure 5 Displayed as along Figure 3 A schematic diagram of the cross-sectional structure along the AA direction.

[0013] Figure 6 The diagram shown is a top view of the light-emitting platform in one optional embodiment.

[0014] Figure 7 The diagram shown is a top view of the light-emitting platform in another alternative embodiment.

[0015] Figure 8 This is a top view of the reflective layer in a light-emitting diode. For ease of illustration, only the boss structure, groove structure, and related structures of the reflective layer are shown.

[0016] Figure 9 The diagram shown is a top view of the first dielectric layer in a light-emitting diode. For ease of illustration, only the boss structure, the groove structure, and the related structures of the first dielectric layer are shown.

[0017] Figure 10 Displayed as along Figure 9 Schematic diagram of the cross-sectional structure along the AA direction.

[0018] Figure 11 The diagram shown is a top view of the structure connecting the electrode layers.

[0019] Figure 12 Displayed as along Figure 11 Schematic diagram of the cross-sectional structure along the AA direction.

[0020] Figure 13 The diagram shown is a top view of the structure connecting the electrode layer in one optional embodiment.

[0021] Figure 14 The diagram shown is a schematic representation of the optical path of the light-emitting diode in this embodiment.

[0022] Figure 15 The diagram shows the optical path of a light-emitting diode that does not have the groove structure described in this application in the prior art.

[0023] Figure 16 The diagram shown is a top view of the reflective layer of the light-emitting diode provided in Embodiment 2 of the present invention. For ease of illustration, only the boss structure, groove structure and other related structures are shown.

[0024] Figure 17 The diagram shown is a top view of the light-emitting diode provided in Embodiment 3 of the present invention.

[0025] Figure 18 Displayed as along Figure 17 A schematic diagram of the cross-sectional structure along the CC direction.

[0026] Figure 19 Displayed as Figure 17 A top view of the central boss structure and the groove structure.

[0027] Figure 20 Displayed as Figure 17 The top view of the first dielectric layer and the connecting electrode layer is shown. For ease of illustration, only the boss structure, groove structure and other related structures are shown.

[0028] Figure 21 Displayed as Figure 20 A schematic diagram of the cross-sectional structure along the AA direction.

[0029] Figure 22 The diagram shown is a top view of the light-emitting diode provided in Embodiment 4 of the present invention.

[0030] Figure 23 A schematic diagram of the structure of the light-emitting device provided in Embodiment 5 of this application.

[0031] Figure Labels 100. Light-emitting diode; 101. Semiconductor stack; 1011. First semiconductor layer; 1012. Active layer; 1013. Second semiconductor layer; 1014. First metal layer; 10141. First contact layer; 10142. First interconnect layer; 1015. Transparent conductive layer; 101-1. Boss structure; 102. Substrate; 103. Spacer region; 1030. First cross region; 104. Groove structure; 1040. Second cross region; 105. Reflective layer; 1050. 106. First dielectric layer; 1061. Second opening; 1062. Third opening; 107. Connecting electrode layer; 1071. First connecting electrode; 1072. Second connecting electrode; 108. Second dielectric layer; 1081. Fourth opening; 1082. Fifth opening; 109. Second metal layer; 1090. Sixth opening; 110. Third dielectric layer; 1101. Seventh opening; 1102. Eighth opening; 120. Pad; 121. First pad; 122. Second pad.

[0032] 900, Light-emitting device; 901, Circuit board; 902, Circuit layer; 903, Light-emitting unit. Detailed Implementation

[0033] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0034] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Although the illustrations only show components related to the present invention and are not drawn according to the actual number, shape and size of the components, the shape, quantity, positional relationship and proportion of each component can be arbitrarily changed under the premise of realizing the technical solution of this invention, and the layout of the components may also be more complex.

[0035] To overcome the various problems and defects of the prior art, this application provides a light-emitting diode and a light-emitting device, which will now be described in detail through the following specific embodiments.

[0036] Specifically, the present invention provides a light-emitting diode, which includes at least a substrate and a semiconductor stack. The semiconductor stack includes a first semiconductor layer, an active layer and a second semiconductor layer stacked sequentially from bottom to top. The semiconductor stack forms a light-emitting mesa, which includes Q protrusion structures. Adjacent protrusion structures are interleaved with each other and spacer regions. The spacer regions are the first semiconductor layer structures exposed after etching the second semiconductor layer and the active layer. The protrusion structures are unetched semiconductor stacks. The interleaved regions are first cross regions. A groove structure is formed in the first semiconductor layer of the spacer region. The groove structure extends from the first semiconductor layer to the substrate and is projected onto the plane where the first semiconductor layer is located. The ratio of the sum of the projected areas of the spacer region to the projected area of ​​the first semiconductor layer is between 0.2 and 0.5. The ratio of the sum of the projected areas of the groove structure to the sum of the projected areas of the spacer region is between 0.2 and 1. Q is a natural number greater than or equal to 2.

[0037] By forming the aforementioned boss structure, the second semiconductor layer becomes discontinuous, thereby reducing the material layers of the second semiconductor layer, reducing light absorption, and improving the light extraction efficiency of the light-emitting diode. Simultaneously, by designing groove structures in the gaps between the boss structures, waveguides that disrupt lateral light can be suppressed, facilitating the emission of lateral light and further improving light extraction efficiency.

[0038] Optionally, the depth of the groove structure is less than or equal to the thickness of the first semiconductor layer in the spacer region.

[0039] Optionally, the thickness of the first semiconductor layer in the spacer region is H1, and the groove structure has a depth H2 in the thickness direction of the first semiconductor layer, wherein H1 and H2 satisfy: 1 / 2 ≤ H2 / H1 ≤ 1.

[0040] Optionally, the thickness of the first semiconductor layer is H3, and the distance from the bottom of the groove structure to the substrate is H4, where H3 and H4 satisfy: 0≤H4 / H3≤1 / 2.

[0041] Optionally, the span distance between adjacent boss structures in the interval region is D1, and the groove structure has a width D2 in the direction of the span distance D1, where 0 < D2 ≤ D1.

[0042] Optionally, the width D2 of the groove structure is between 0.5 μm and 80 μm.

[0043] The depth and width of the groove structure are designed to maximize the reflection of light radiated from the active layer, thereby improving light extraction efficiency and light emission efficiency. Simultaneously, the groove structure facilitates the alignment and fitting of the photomask during the fabrication process. Furthermore, when the groove structure is continuous, its depth allows for optimal ohmic contact area between the first metal layer and the first semiconductor layer, which helps optimize the operating voltage of the LED.

[0044] Optionally, the cross-section of the boss structure is a polygonal structure with a side length of 3 or more.

[0045] Optionally, the distance between the geometric centers of two adjacent boss structures is D3, the perpendicular distance from the geometric center of the boss structure to the edge is D4, and the boss structure is defined to have a shape parameter M, an expansion coefficient R, and a filling coefficient P, wherein the expansion coefficient R = D4 / D1, the filling coefficient P = Ʃ the projection of the boss structure / the projected area of ​​the light-emitting diode, the shape parameter M = the expansion coefficient R / the filling coefficient P, and the value of the shape parameter M is between 3.5 and 4.5.

[0046] As described above, by setting important dimensional information such as the span distance D1 between boss structures, the width D2 of the groove structure, the distance D3 between the geometric centers of adjacent boss structures, the vertical distance D4 from the geometric center of the boss structure to the edge, and the expansion coefficient of the boss structure, the light-emitting diode can obtain the best brightness within a certain shape parameter M range, and has the best brightness improvement ratio compared with the prior art.

[0047] Optionally, the groove structures are distributed intermittently, and the groove structures do not extend to the first intersection region.

[0048] Optionally, the groove structure is located between adjacent boss structures, and the groove structure is symmetrically distributed along the line connecting the geometric centers of two adjacent boss structures.

[0049] Optionally, along the extension direction of the edge of the boss structure, the groove structure has a length L, the length L being greater than or equal to the vertical distance from the geometric center of the boss structure to the edge and less than or equal to twice the vertical distance from the geometric center of the boss structure to the edge, or the length L being greater than or equal to half the side length of the boss structure and less than or equal to the side length of the boss structure.

[0050] Optionally, the groove structure forms a continuous structure and has a second intersecting region located within the first intersecting region and projected onto the plane where the first semiconductor layer is located, wherein the projected area of ​​the first intersecting region is greater than the projected area of ​​the second intersecting region.

[0051] The groove structure can be designed as an intermittent structure corresponding to the protrusion structure, so as to retain enough first semiconductor layer to form ohmic contacts in the future and ensure that the voltage of the light-emitting diode is not too high; the groove structure can also be designed as a continuous structure, and there is a second intersection area in the area surrounded by the four protrusion structures, thereby increasing the area ratio of the groove structure that can form a change in the optical waveguide and improving the light extraction efficiency.

[0052] Optionally, the light-emitting diode further includes a first metal layer located in the first intersection region for electrical connection with the first semiconductor layer.

[0053] Optionally, the light-emitting diode further includes a first metal layer located in the first cross region and electrically connected to the first semiconductor layer, wherein the first metal layer fills the second cross region.

[0054] Optionally, the overlap area between the first metal layer and the groove structure accounts for 0% to 40% of the sum of the projected areas of the groove structure.

[0055] A suitable overlap area between the first metal layer and the groove structure can, on the one hand, increase the ohmic contact area between the first metal layer and the first semiconductor layer, which is beneficial to optimizing the operating voltage of the light-emitting diode; on the other hand, it can retain enough groove structure to fill the first dielectric layer, thereby forming a good ODR reflective layer with the connecting electrode layer, thereby increasing the light extraction efficiency of the light-emitting diode.

[0056] Optionally, the light-emitting diode further includes a first dielectric layer located above the boss structure and the first metal layer, and filling at least a portion of the groove structure.

[0057] Optionally, the area of ​​the groove structure filled by the first dielectric layer accounts for 60% to 100% of the sum of the projected areas of the groove structure.

[0058] Optionally, the light-emitting diode further includes a connection electrode layer, comprising a first connection electrode located above the first metal layer and a second connection electrode located above the boss structure, and the connection electrode layer located at least partially above the first metal layer forms a continuous chain structure, the chain structure being located above the first dielectric layer filling the groove structure.

[0059] By forming a good ODR reflective layer through the first dielectric layer and the connecting electrode layer filling the groove structure, the proportion of light emitted towards the light-emitting surface is increased, improving the reflection efficiency and thus further increasing the light extraction efficiency of the LED. Simultaneously, setting an appropriate filling ratio of the first dielectric layer in the groove structure increases the overall area of ​​the ODR reflective layer. Specifically, forming an ODR reflective layer on the first dielectric layer and the second connecting electrode above the boss structure increases the reflection efficiency of light emitted from above the boss; the first dielectric layer filling the groove structure increases the reflection of lateral light incident on the groove structure, allowing it to be emitted towards the light-emitting surface, thereby increasing the light extraction efficiency of the LED.

[0060] Optionally, the opening width of the groove structure is greater than the bottom width of the groove structure, and the angle between the sidewall of the groove structure and the plane containing the bottom of the groove structure is between 40° and 90°.

[0061] The tilt angle of the sidewall of the groove structure is beneficial to both the uniformity of the filling of the first dielectric layer in the groove structure and the reflection of light.

[0062] According to another aspect of the present invention, a light-emitting device is provided, the light-emitting device comprising a substrate and a plurality of light-emitting units located on the substrate, a circuit layer being formed on the substrate, the light-emitting units comprising the light-emitting diodes provided by the present invention, the light-emitting diodes being electrically connected to the circuit layer via a pad structure.

[0063] Since the above-mentioned light-emitting devices include the light-emitting diodes of this application, they also have high luminous efficiency and good reliability.

[0064] Example 1 This embodiment provides a light-emitting diode, such as Figure 1 and Figure 2 As shown, the light-emitting diode 100 of this embodiment includes at least a semiconductor stack 101 and a substrate 102. The substrate 102 can be made of sapphire, silicon carbide, silicon, or gallium nitride. In this embodiment, a sapphire substrate is used as an example. In this embodiment, the side of the substrate 102 opposite to the semiconductor stack 101 is the light-emitting side of the light-emitting diode.

[0065] Similarly, refer to Figure 2The aforementioned semiconductor stack 101 is located above the substrate 102 and includes a first semiconductor layer 1011, an active layer 1012, and a second semiconductor layer 1013 stacked sequentially from bottom to top. The first semiconductor layer 1011, active layer 1012, and second semiconductor layer 1013 may include Ш-V nitride semiconductors, such as nitride semiconductors like Al, Ga, and In. The first semiconductor layer 1011 may include n-type impurities (e.g., Si, Ge, Sn), and the second semiconductor layer 1013 may include p-type impurities (e.g., Mg, Sr, Ba). It is understood that the dopants in the first semiconductor layer 1011 and the second semiconductor layer 1013 may also be the opposite of those described above. The active layer 1012 may include a multiple quantum well (MQW) structure, and the desired wavelength can be emitted from the active layer 1012 by adjusting the composition ratio of the nitride semiconductors. In this embodiment, the wavelength of the light radiated by the active layer 1012 is between 200 nm and 400 nm, and further, between 200 nm and 280 nm.

[0066] In this embodiment, as Figure 2 and Figure 3 As shown, the semiconductor stack 101 has light-emitting mesas to expose a portion of the surface of the first semiconductor layer 1011. Further, the light-emitting mesas are formed as Q protrusion structures 101-1, where Q is a natural number greater than or equal to 2. Figure 2 As shown, you can also refer to Figure 3 The boss structure 101-1 is formed by etching the second semiconductor layer 1013 and the active layer 1012 sequentially from top to bottom, or by further etching part of the first semiconductor layer 1011 to expose the first semiconductor layer 1011. That is, the boss structure 101-1 is an unetched semiconductor stack 101. The boss structure 101-1 can be formed as a columnar boss, a prism-shaped boss, a frustum-shaped boss, or other polygonal structures with a cross-section having a side length greater than or equal to 3. For example, the cross-sectional shape of the boss structure 101-1 can be a rectangular structure, a circular structure, an elliptical structure, a trapezoidal structure, a pentagonal structure, a hexagonal structure, etc., and the longitudinal cross-sectional shape can be a rectangular structure, a trapezoidal structure, etc. It is understood that the cross-section described above is the cross-section obtained by cutting the boss structure 101-1 with a projection plane parallel to the plane where the first semiconductor layer 1011 is located. In optional embodiments, such as Figure 3 As shown, the boss structure 101-1 located at the two corners on one side of the light-emitting diode forms a corner with a large arc facing outward, which makes it easier to identify the electrodes of the light-emitting diode when forming the electrode structure later. Since there is less metal layer obstruction of the electrode structure at the corner with a large arc, the recognition is relatively high, which is beneficial to identify the direction of the light-emitting diode. Especially at the package end, the operator can identify the direction of the current entering the second electrode through the corner with a large arc under a low magnification microscope.

[0067] Multiple boss structures 101-1 can be as follows Figure 3 As shown, they have the same cross-sectional shape and size. In some embodiments, they may also be as shown... Figure 6 and Figure 7 The bosses shown have different cross-sectional shapes or sizes; or the cross-sectional shapes of multiple boss structures 101-1 are all different; or some boss structures 101-1 have the same cross-sectional shape; or the cross-sectional sizes of multiple boss structures 101-1 are all different, or some boss structures 101-1 have the same cross-sectional size. Multiple boss structures 101-1 can be as follows: Figure 3 The diagram shows a regular rectangular array distribution, or a regular arrangement in other array forms; or it can be as follows... Figure 6 and Figure 7 As shown, the protrusions are arranged in an irregular manner. For example, the number of protrusions on the periphery of the light-emitting mesa may be greater than the number of protrusion structures 101-1 in the middle region of the light-emitting mesa, or vice versa; or the number of protrusion structures 101-1 may gradually increase or decrease along the first or second direction. The cross-sectional shape and size of the protrusion structure 101-1, as well as the number of protrusion structures 101-1, can be adjusted and selected according to the size of the light-emitting diode, aiming not to negatively affect the light emission effect of the light-emitting diode, while ensuring that the semiconductor epitaxial stack has the best current distribution.

[0068] To ensure the luminous effect of the light-emitting mesa, the ratio of the sum of the projected areas of the protrusion structures 101-1 projected onto the plane of the first semiconductor layer 1011 to the projected area of ​​the first semiconductor layer 1011 is between 0.3 and 0.8. For each protrusion structure 101-1, its surface area should not be too large or too small. While ensuring optimal current distribution in the epitaxial structure as described above, it is also necessary to consider that the surface area of ​​each protrusion structure 101-1 should be large enough to guarantee a sufficiently large P-contact area, thereby avoiding the forward voltage V of the P-type semiconductor layer. F Insufficient height results in insufficient brightness of the light-emitting diode. In an optional embodiment, the surface area of ​​each boss structure 101-1 is approximately between 0.130 mm². 2 ~0.151mm 2 .

[0069] like Figure 2 The diagram shows the simultaneous combination Figure 3 After etching the semiconductor stack 101 to form the aforementioned boss structure 101-1, the exposed first semiconductor layer 1011 is formed as a spacer region 130, and the spacer region 130 between adjacent boss structures 211 is in the first direction (i.e. Figure 3The first direction (X-direction) and the second direction (Y-direction) extend alternately, intersecting each other. The first direction and the second direction are two intersecting directions within the same plane, and further, they are two intersecting directions perpendicularly. For example... Figure 2 As shown, the interval regions 103 are staggered in the first and second directions, forming a first intersection region 1030 in the area enclosed by the four boss structures 101-1. Similarly, as... Figure 2 As shown, a groove structure 104 is formed in the first semiconductor layer 1011 of the spacer region 103 between adjacent boss structures 101-1. This groove structure 104 is formed by etching a portion of the first semiconductor layer 1011 in the spacer region 103, and the bottom of the groove structure 104 is located inside the first semiconductor layer 1011 or at the interface between the first semiconductor layer 1011 and the substrate 102. That is, as... Figure 5 As shown, the thickness of the first semiconductor layer 1011 at the spacer region 103 is H1, and the groove structure 104 has a depth H2 in the thickness direction of the first semiconductor layer 1011. H1 and H2 satisfy: 1 / 2 ≤ H2 / H1 ≤ 1, further, 2 / 3 ≤ H2 / H1 ≤ 1, and even further, 3 / 4 ≤ H2 / H1 ≤ 4 / 5. Additionally, similarly... Figure 5 As shown, the thickness of the first semiconductor layer 101 is defined as H3, and the distance from the bottom of the groove structure 104 to the surface of the substrate 102 is defined as H4. Wherein, H3≥H1, and H3 and H4 satisfy: 0≤H4 / H3≤1 / 2, further, 0≤H4 / H3≤1 / 3, and even further, 1 / 5≤H4 / H3≤1 / 4.

[0070] The depth of the groove structure allows for optimal reflection of light radiated from the active layer at more angles, thus improving light extraction efficiency and light emission efficiency. Furthermore, when the groove structure is continuous, its depth ensures optimal ohmic contact area between the first metal layer and the first semiconductor layer, which helps optimize the operating voltage of the LED.

[0071] It is understandable that in a light-emitting diode (LED), the spacing region 130 around the LED 100 forms a cutting region between adjacent LEDs, facilitating subsequent LED segmentation. Similarly, referring to... Figure 1 The first semiconductor layer 1011 surrounding the spacer region 130 of the light-emitting diode is also etched away to expose the substrate 102. This structure reduces the number of material layers in the semiconductor stack 101 of the light-emitting diode, thereby reducing light absorption and improving the light extraction efficiency of the light-emitting diode.

[0072] In an optional embodiment, refer to Figure 4The distance D3 between the geometric centers of two adjacent boss structures 101-1 (i.e., the geometric center of the projection of the boss structure 101-1 onto a plane parallel to the first semiconductor layer 1011) is between 30 μm and 500 μm, further between 50 μm and 300 μm, and even further between 70 μm and 200 μm. When the boss structure shown in this embodiment is formed as a quadrilateral structure with a cross-section, adjacent boss structures 101-1 are arranged with their edges facing each other. The vertical distance D4 from the geometric center of the boss structure 101-1 to the edge is between 10 μm and 200 μm, further between 20 μm and 100 μm, and even further between 30 μm and 80 μm.

[0073] Similarly, refer to Figure 4 The spacing region 130 between adjacent boss structures 101-1 has a span distance (i.e., the width of the spacing region 130) D1. The groove structure 104 has a width D2 in the direction of the span distance D1, and 0 < D2 ≤ D1, further, D2 < D1, and D4 = (D3 - D1) / 2. In an optional embodiment, the span distance D1 of the spacing region 103 is between 10 μm and 80 μm, further, D1 is between 15 μm and 40 μm. The width D2 of the groove structure is between 0.5 μm and 80 μm, further, D2 is between 15 μm and 40 μm. Projected onto the plane where the first semiconductor layer 1011 is located, the ratio of the sum of the projected areas of the spacing region 130 to the projected area of ​​the first semiconductor layer 1011 is between 0.2 and 0.5, and the ratio of the sum of the projected areas of the groove structure 104 to the sum of the projected areas of the spacing region 103 is between 0.2 and 1. The groove structure 104 can suppress the waveguide from breaking side light, which is beneficial to the emission of side light and thus improves the light extraction efficiency. At the same time, the groove structure 104 facilitates the fitting and alignment of the photomask in the design and manufacturing process.

[0074] In an optional embodiment, the span distance of the intervals 130 between the boss structures 101-1 can be the same or different. When the span distances of the intervals 130 are different, the deviation between the maximum and minimum span distances is less than or equal to 30 μm. That is, the span distances of the intervals 130 will not have excessive differences, so as to ensure the reasonable distribution of the boss structures 211. The span distance of the intervals 130 can be adjusted according to the shape, size, and other design features of the boss structures 211.

[0075] In this embodiment, the shape parameter M, expansion coefficient R, and filling coefficient P of the boss structure 101-1 are defined. The expansion coefficient R = D4 / D1, and the filling coefficient P is the ratio of the sum of the projected areas of the boss structures to the projected area of ​​the light-emitting diode (LED), i.e., filling coefficient P = (projected area of ​​the boss structure / projected area of ​​the LED), M = R / P. By setting important dimensional information such as the span distance D1 between boss structures 101-1, the width D2 of the groove structure 104, the distance D3 between the geometric centers of adjacent boss structures 101-1, the perpendicular distance D4 from the geometric center of the boss structure to the edge, and the proportion of the projected area of ​​the boss structure 101-1, the value of M is set between 3.5 and 4.5. This allows the LED to achieve optimal brightness within a certain range of shape parameter M, resulting in the best brightness improvement ratio compared to existing technologies.

[0076] Refer again Figures 3 to 5 In this embodiment, the groove structure 104 is a discontinuous structure in both the first and second directions. That is, the groove structure 104 is distributed along the edge of each boss structure 101-1 and does not extend to the first intersection area 1030 of the interval area 103. At this time, the groove structure 104 has a length L along the side length D4 of the boss structure 101-1. This length L is greater than or equal to the perpendicular distance D4 from the geometric center of the boss structure 101-1 to the edge, and less than or equal to twice the perpendicular distance D4 from the joint center of the boss structure 101-1 to the edge, or the length L is greater than or equal to half the side length of the boss structure 101-1 and less than or equal to the side length of the boss structure 101-1. Further, the groove structures 104 between two adjacent boss structures 101-1 are symmetrically distributed in the length L direction about the line connecting the geometric centers of the two boss structures 101-1.

[0077] As described above, the length L and width D2 of the groove structure 104 can ensure that the groove structure 104 has a sufficient area ratio, thereby achieving the best reflection effect of the light radiated by the active layer, which is beneficial to improving the light extraction rate and light extraction efficiency, and also makes it easier to align the photomask in the design process.

[0078] like Figure 2 As shown, and in combination Figure 3 and Figure 5The light-emitting diode 100 in this embodiment further includes a first metal layer 1014, which is located in the first intersection region 1030 of the spacing region 103 to be electrically connected to the exposed first semiconductor layer 1011. Further, the overlap area between the first metal layer 1014 and the groove structure 104 accounts for 0% to 40% of the sum of the projected areas of the groove structure 104. In this embodiment, the first metal layer 1014 does not overlap with the groove structure 104; that is, the first metal layer 1014 does not cover the groove structure 104, but is only located in the first intersection region 1030, and the overlap area between the first metal layer 1014 and the groove structure 104 accounts for 0% of the sum of the projected areas of the groove structure 104. The metal connection 1014 can be a single-layer structure or a multi-layer structure. In optional embodiments, such as... Figure 9 As shown, the first metal layer 1014 includes a first contact layer 10141 and a first connection layer 10142 located above the first contact layer 10141. The first contact layer 10141 forms an ohmic contact with the first semiconductor layer 1011, and can be, for example, one or more of the following metals: Au, Ge, Ni, Ti, Cr, V, Al, etc. The first connection layer 10142 is a protective layer and can be formed on the upper surface of the first contact layer 10141, or as shown in the diagram. Figure 2 As shown, the first contact layer 10141 is completely encapsulated on its upper surface and sidewalls. The first connection layer 10142 can be, for example, a single-layer or multi-layer structure formed from one or more of Au, Ag, Ti, etc. The first metal layer 1014 forms an ohmic contact with the first semiconductor layer 1011, improving its electrical performance and reducing the absorption of light radiated from the active layer 1012.

[0079] Similarly, Figure 2 As shown, a transparent conductive layer 1015 is also formed above the boss structure 101-1. This transparent conductive layer 1015 is formed on the upper surface of the boss structure 101-1 and can completely cover the upper surface of the boss structure 101-1 or cover the middle region of the upper surface of the boss structure 101-1, thereby increasing the current diffusion of the second semiconductor layer 1013 in the boss structure 101-1. The transparent conductive layer 1015 can be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum-doped zinc oxide transparent conductive glass (AZO), etc.

[0080] Reference Figure 2 and Figure 8The light-emitting diode 100 of this embodiment also includes a reflective layer 105, which can be a metal material layer with reflective properties such as Ti, Al, or Ag. The reflective layer 105 is formed above the boss structure 101-1. Specifically, the reflective layer 105 covers the transparent conductive layer 1015 and the edge region of the second semiconductor layer 1013 not covered by the transparent conductive layer 1015. Alternatively, the reflective layer 105 may be formed above the boss structure 101-1 and extend to the sidewall of the boss structure 101-1, further extending to cover the active layer 1012 on the sidewall of the boss structure 101-1, thereby maximally reflecting the light radiated from the active layer 1012 to the front side. The reflective layer 105 forms a first opening 1050 above the boss structure 101-1 to expose the transparent conductive layer 1015, facilitating electrical connection between the subsequently formed metal material and the transparent conductive layer 1015. Figure 8 As shown, in this embodiment, the reflective layer 105 ( Figure 8 The shaded area (with a central diagonal line) forms an island structure above the boss structure 101-1, corresponding to the boss structure 101-1. The reflective layer 105 increases light reflection and enhances the light emission effect of the LED.

[0081] Reference Figure 2 and Figure 9 and Figure 12 The light-emitting diode 100 in this embodiment further includes a first dielectric layer 106, a connecting electrode layer 107, and a second dielectric layer 108. For example... Figure 9 As shown, the first dielectric layer 106 is located above the spacer region 103 and the boss structure 101-1, forming a continuous structure covering the spacer region 103 and the boss structure 101-1. The first dielectric layer 106 has multiple second openings 1061 and third openings 1062 formed in the corresponding regions of the first metal layer 1014 and the boss structure 101-1. The third opening 1062 formed above the boss structure 101-1 corresponds to the first opening 1050 in the reflective layer 105, thereby exposing the first metal layer 1014 and the transparent conductive layer 1015 respectively, facilitating the subsequent connection electrodes to be electrically connected to the first metal layer 1014 and the transparent conductive layer 1015 respectively. Figure 9 As shown, the aperture of the third opening 1062 of the first dielectric layer 106 above the boss structure 101-1 is smaller than the aperture of the first opening 1050 in the reflective layer 105. That is, the first dielectric layer 106 covers the sidewall of the reflective layer 105 at the first opening 1050, thereby encapsulating the reflective layer 105 and preventing short circuits caused by exposure of the reflective layer 105. Furthermore, the first dielectric layer 106 can also form a total internal reflection structure with the reflective layer 105, increasing the reflection of light.

[0082] like Figure 9 and Figure 10 As shown, in the interval 103, the first dielectric layer 106 covers the interval 103 and fills the groove structure 104. Further, the first dielectric layer 106 at least covers the sidewalls of the groove structure 104, or completely fills the groove structure 104. Further, the filling ratio of the first dielectric layer 106 in the groove structure 104 is 60%~100%. In this embodiment, the filling ratio of the first dielectric layer 106 in the groove structure 104 is 100%. In an optional embodiment, to facilitate the coverage and filling of the first dielectric layer 106, the groove structure 104 is configured with an opening width greater than the bottom width. Further, the angle between the sidewalls of the groove structure 104 and the plane containing the bottom of the groove structure 104 is between 40° and 90°, and more specifically, between 60° and 70°. The tilt angle of the sidewalls of the groove structure 104 is beneficial on the one hand to the uniformity of the filling of the first dielectric layer 106 within the groove structure 104, and on the other hand to the reflection of light. Above the boss structure 101-1, the thickness of the first dielectric layer 106 is between 10 Å and 5000 Å, further between 100 Å and 3000 Å, and even further between 500 Å and 2000 Å. The first dielectric layer 106, filled in the groove structure 104, can form a good ODR reflective layer with the subsequently formed metal material, such as the connecting electrode layer 107 and / or the second metal layer 109, increasing the proportion of light emitted towards the light-emitting surface and improving the reflection efficiency, thereby increasing the light-emitting efficiency of the light-emitting diode. At the same time, setting an appropriate thickness of the first dielectric layer 106 and its filling ratio in the groove structure 104 can ensure the reflection effect of the ODR reflective layer and increase the overall area of ​​the ODR reflective layer, thereby further increasing the light-emitting efficiency of the light-emitting diode.

[0083] like Figure 11 and Figure 13 As shown, the connecting electrode layer 107 includes a first connecting electrode 1071 and a second connecting electrode 1072 that are spaced apart from and insulated from each other and located above the first dielectric layer 106. The first connecting electrode 1071 is located in the spacer region 103, specifically above the first metal layer 1014. At least a portion of the first connecting electrode 1071 forms a continuous structure, for example, a continuous structure in a first direction and / or a second direction. Figure 11 As shown, the first connecting electrode 1071 forms multiple continuous chain-like structures in a first direction, and the multiple chain-like structures are mutually insulated in a second direction. In an optional embodiment, as... Figure 13 As shown, the first connecting electrode 1071 has a continuous structure in both the first and second directions, for example... Figure 11As shown, multiple continuous chain-like structures are formed in the first and second directions, respectively, and these chain-like structures are interconnected. The first connecting electrode 1071 fills the first opening 1060 in the corresponding area of ​​the first intersection region 1030 and is electrically connected to the first metal layer 1014. The second connecting electrode 1072 is located above the boss structure 101-1 and is electrically connected to the transparent conductive layer 1015 through the first opening 1060 and the opening 1050. Similarly... Figure 12 As shown, the second connecting electrode 1072 forms an island structure above the boss structure 101-1, thereby achieving mutual insulation with the first connecting electrode 1071. Through the aforementioned connecting electrode layer 107 and the first dielectric layer 106, a good ODR reflection system can be formed, further increasing the proportion of light emitted towards the light-emitting surface and improving the light emission effect.

[0084] Refer again Figure 2 The second dielectric layer 108 is located above the connecting electrode layer 107, and a plurality of fourth openings 1081 are formed in the corresponding region of a portion of the first metal layer 1014, and a plurality of fifth openings 1082 are formed in the corresponding region of the boss structure 101-1. Further, in order to achieve insulation between the subsequently formed metal layer and the connecting electrode layer 107, the fourth openings 1081 are formed only in the corresponding region of the first metal layer 1014 on one side of the light-emitting diode 100 to expose the first connecting electrode 1071. A fifth opening 1082 is formed above each boss structure 101-1 to expose the second connecting electrode 1072.

[0085] The first dielectric layer 106 and the second dielectric layer 108 can be made of the same material or different materials. In this embodiment, the first dielectric layer 106 and the second dielectric layer 108 are made of the same material, for example, both are SiO2 layers, or they can be SiO2, TiO2, Ta2O5, or SiO2. x SiO x N y The multilayer material can be any combination of Si3N4 and Al2O3. The connecting electrode layer 107 can be a metal material layer with reflective properties, such as Ti, Al, or Ag. Thus, the connecting electrode layer can form a metal mirror. Since Ag has good reflective properties in the visible light band, in this embodiment, a mirror formed of Ti or Al is preferred for the UV light-emitting diode. The connecting electrode layer 107 and the reflective layer 105 can form a total internal reflection system, increasing light reflection and improving the light emission effect of the light-emitting diode 100.

[0086] Similarly, Figure 2As shown, the light-emitting diode 100 of this embodiment further includes a second metal layer 109 and a third dielectric layer 110. The second metal layer 109 is located above the second dielectric layer 108, and a sixth opening 1090 is formed in the region corresponding to the first metal layer 1014 on one side of the light-emitting diode 100. The sixth opening 1090 corresponds to the fourth opening 1081 formed on that side of the second dielectric layer 108 that exposes the first connection electrode 1071, thereby exposing the first connection electrode 1071.

[0087] Similarly, Figure 2 As shown, the third dielectric layer 110 is located above the second metal layer 109. The third dielectric layer 110 forms a seventh opening 1101 in the region corresponding to the sixth opening 1090, and an eighth opening 1102 is formed in the region corresponding to the boss structure 101-1 on the other side of the light-emitting diode 100. The seventh opening 1101 is corresponding to the sixth opening 1090 to expose the first connection electrode 1071, and the eighth opening 1102 is formed in the region corresponding to the boss structure 101-1 to expose the second metal layer 109. To prevent short circuits, in this embodiment, the aperture of the sixth opening 1090 corresponding to the first metal layer 1014 is larger than the aperture of the fourth opening 1081 corresponding to it, and the aperture of the seventh opening 1101 in the third dielectric layer 110 is preferably smaller than the aperture of the sixth opening 1090. Thus, the third insulating layer 110 can be formed on the sidewall of the sixth opening 1090, covering the second metal layer 109 at the sidewall of the sixth opening 1090, preventing short circuit with the subsequently formed first pad 121.

[0088] Refer again Figure 1 and Figure 2 The light-emitting diode in this embodiment also includes pads 120 formed above the third dielectric layer 110. The pads 120 include a first pad 121 and a second pad 122 spaced apart above the third dielectric layer 110. The first pad 110 is located on the side containing the seventh opening 1101 and the sixth opening 1090, and fills the seventh opening 1101, the sixth opening 1090, and the fourth opening 1081. It is electrically connected to the first connection electrode 1071, and further electrically connected to the first semiconductor layer 1011 through the first metal layer 1014. The second pad 122 fills the eighth opening 1102 to be electrically connected to the second metal layer 109, and further electrically connected to the second semiconductor layer 1013 through the second connection electrode 1071 and the transparent conductive layer 1015.

[0089] To verify the effect of the recessed structure 104 of the photodiode in this embodiment on light emission, such as Figure 14 and Figure 15 The diagram shows a comparison of the optical path diagrams of the light-emitting diode of this embodiment and a prior art light-emitting diode that does not have the groove structure shown in this embodiment. In the prior art, such as... Figure 15 As shown, the light emitted from the active layer 1012, especially the side-emitted light, has a waveguide inside the semiconductor stack 101, oscillating back and forth within the semiconductor stack 1. Corresponding to scheme A, it cannot be emitted, resulting in significant loss of side light intensity in the light-emitting diode, severely affecting its light extraction performance. For the light-emitting diode of this embodiment, as... Figure 14 As shown, when light is incident on the sidewall of the groove structure 104, the waveguide of the lateral light is broken due to the presence of the groove structure 104. At the same time, the semiconductor stack 101 and the first dielectric layer 106 filled in the groove structure 104 have a difference in refractive index. Therefore, more light can be emitted along the side of the light-emitting diode without being confined in the semiconductor stack. This reduces lateral light loss and increases the overall light output efficiency of the light-emitting diode.

[0090] Example 2 This embodiment also provides a light-emitting diode (LED), which also includes at least a semiconductor stack 101. In an optional embodiment, the LED 100 further includes a substrate 102, which can be made of sapphire, silicon carbide, silicon, or gallium nitride. In this embodiment, a sapphire substrate is used as an example. In this embodiment, the side of the substrate 102 opposite to the semiconductor stack 101 is the light-emitting side of the LED.

[0091] The similarities to the light-emitting diode 100 provided in other embodiments will not be repeated here; the differences are as follows: like Figure 16 As shown by the shaded area indicated by the diagonal line, in this embodiment, the reflective layer 105 is not only formed above the boss structure 101-1, but also forms a gap region 103 between adjacent boss structures 101-1 in a first direction or a second direction, while filling the groove structure 104 in the gap region 103. Further, the reflective layer 105 at least covers the sidewalls of the groove structure 104. Figure 16 As shown, in this embodiment, the reflective layer 105 forms a continuous chain-like structure in the first direction (X direction). Simultaneously, the reflective layer 105 does not cover the first intersection region 1030, and therefore does not cover the first metal layer 1014. The continuous chain-like structure of the reflective layer 105 provides greater stability, preventing it from detaching during film removal and improving its reliability. Furthermore, its filling of the groove structure 104 increases the proportion of light emitted towards the light-emitting surface, thereby increasing the light extraction efficiency of the LED.

[0092] In addition, a protective layer (not shown in the figure) can be formed between the transparent conductive layer 1015 and the reflective layer 105. This protective layer is an insulating material layer. On the one hand, it can prevent highly reflective metals in the reflective layer 105 from migrating to the sidewalls of the semiconductor stack 101, forming a conductive path and causing a short circuit. On the other hand, it can also form an ODR reflective structure with the reflective layer 105, thereby improving reflectivity. The material of the above-mentioned protective layer can include SiO2, TiO2, Ta2O5, SiO2, etc. x SiO x N y A multilayer material consisting of any of the following: Si3N4, Al2O3, etc.

[0093] Example 3 This embodiment also provides a light-emitting diode (LED), which also includes at least a semiconductor stack 101. In an optional embodiment, the LED 100 further includes a substrate 102, which can be made of sapphire, silicon carbide, silicon, or gallium nitride. In this embodiment, a sapphire substrate is used as an example. In this embodiment, the side of the substrate 102 opposite to the semiconductor stack 101 is the light-emitting side of the LED.

[0094] The similarities to the light-emitting diode 100 provided in other embodiments will not be repeated here; the differences are as follows: like Figure 17 and Figure 19 As shown, in this embodiment, the groove structure 104 forms a continuous structure in the first and second directions, and a second intersection region 1040 is formed in the first intersection region 1030 of the spacing region 103. Projected onto the plane where the first semiconductor layer 1011 is located, the projected area of ​​the first intersection region 1030 is larger than the projected area of ​​the second intersection region 1040, and the projected outline of the second intersection region 1040 is located within the projected outline of the first intersection region 1030. Figure 17 As shown, the second intersection region 1040 can partially penetrate the first semiconductor layer 1011 along its thickness direction. In an optional embodiment, the second intersection region 1040 can completely penetrate the first semiconductor layer 1011. The arrangement of the second intersection region 1040 is consistent with the arrangement of the groove structure 104.

[0095] like Figure 17 and Figure 18As shown, the first metal layer 1014 is located in the first intersection region 1030 and fills the second intersection region 1040. Since the second intersection region 1040 can expose the sidewalls of the first semiconductor layer 1011, although the second intersection region 1040 loses part of the surface of the first semiconductor layer 1011 in the first intersection region 1030, the increased exposure of the sidewalls of the first semiconductor layer 1011 ensures that the contact area between the first metal layer 1014, especially the first contact layer 10141, and the first semiconductor layer 1011 remains unchanged or even increases. Therefore, it can ensure that the operating voltage of the light-emitting diode 100 remains unchanged or reduce the operating voltage of the light-emitting diode 100, which is beneficial to improving the photoelectric efficiency of the light-emitting diode. The overlap area between the first metal layer 1014 and the groove structure 104 accounts for 0% to 40% of the sum of the projected areas of the groove structure 104. The appropriate overlap area between the first metal layer 1014 and the groove structure 104 is beneficial for optimizing the operating voltage of the light-emitting diode. On the other hand, it can retain enough groove structure 104 to fill the first dielectric layer 106, thereby forming a good ODR reflective layer with the subsequent metal materials, such as the connecting electrode layer 107 and / or the second metal layer 109, thereby increasing the light extraction efficiency of the light-emitting diode.

[0096] Similarly, Figure 17 and Figure 18 As shown, the first dielectric layer 106 fills the groove structure 104 at this time, but does not fill its second intersection region 1040. That is, the filling ratio of the first dielectric layer 106 in the groove structure is less than 100%, and further, it is between 60% and 100%. Figure 20 and Figure 21 As shown, in this embodiment, the connecting electrode layer 107 includes a first connecting electrode 1071 and a second connecting electrode 1072, which are spaced apart from and insulated from each other and located above the first dielectric layer 106. The first connecting electrode 1071 is located in the spacing region 103, specifically above the first metal layer 1014, and at least a portion of the first connecting electrode 1071 forms a continuous structure, for example, a continuous structure in a first direction and / or a second direction. The second connecting electrode 1072 forms an island structure above the boss structure 101-1, thereby achieving mutual insulation with the first connecting electrode 1071. The connecting electrode layer 107 can also play a certain reflective role, forming a good ODR reflection system with the first dielectric layer 106, increasing the reflection of light, further increasing the proportion of light emitted towards the light-emitting surface, and improving the light emission effect.

[0097] Example 4 This embodiment also provides a light-emitting diode (LED), which also includes at least a semiconductor stack 101. In an optional embodiment, the LED 100 further includes a substrate 102, which can be made of sapphire, silicon carbide, silicon, or gallium nitride. In this embodiment, a sapphire substrate is used as an example. In this embodiment, the side of the substrate 102 opposite to the semiconductor stack 101 is the light-emitting side of the LED.

[0098] The similarities to the light-emitting diode 100 provided in other embodiments will not be repeated here; the differences are as follows: In this embodiment, the protrusion structure 101-1 of the light-emitting diode is formed as an irregular pattern structure. For example, as shown... Figure 22 As shown, in this embodiment, the groove structure 104 is formed as a continuous structure. Projected onto the plane containing the surface of the substrate 102, the projection outline of the groove structure 104 in the middle region of the light-emitting diode is formed as a hexagonal structure and is formed as a closely arranged shape. The projection outline of the boss structure 101-1 falls within the projection outline of the groove structure 104. In the first direction ( Figure 22 In the X-direction, the gap 103 between the projection of the boss structure 101-1 and the projection of the groove structure 104 serves as the region for forming the first metal layer 1014. In this region, the projected outline of the boss structure 101-1 and the projected outline of the groove structure 104 form a triangular-like area. That is, the projected outline of the boss structure 101-1 is formed as a pentagonal structure, with one side extending in the first direction to form a triangular-like area with the projected outline of the groove structure 104; the remaining four sides are parallel to four sides of the groove structure 104. This arrangement can create sufficient space to form the first metal layer 1014, while also ensuring sufficient projected area of ​​the boss structure 101-1, ensuring that the light-emitting diode has sufficient light-emitting area.

[0099] The boss structure 101-1 located in the edge region of the light-emitting diode (i.e. Figure 22 The outermost boss structure 101-1 of the light-emitting diode shown has a projected outline that is an irregular polygon. On the side near the edge of the light-emitting diode, the projected outline of the boss structure 104 is parallel to the edge of the light-emitting diode. On the side opposite to the edge of the light-emitting diode, the projected outline of the boss structure 101-1 is parallel to the projected outline of the groove structure 104.

[0100] Understandably, attached Figure 22 Only some of the structural reference numerals are shown in the accompanying drawings; the remaining structures, which have the same configuration as those in Embodiments 1 to 3, are not shown.

[0101] Example 5 This embodiment provides a light-emitting device, such as... Figure 23 As shown, the light-emitting device 900 includes a substrate 901 and a plurality of light-emitting units 903 located on the substrate 901. A circuit layer 902 is formed on the substrate 901. The light-emitting units 903 in this embodiment include any one or more light-emitting diodes provided in Embodiments 1 to 4 of this application. The light-emitting diodes are electrically connected to the circuit layer 902 via the pad structure 120. The light-emitting device 900 in this embodiment includes the light-emitting diode provided in Embodiment 1, and therefore has good light emission effect.

[0102] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A light emitting diode comprising at least a substrate and a semiconductor stack, the semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked in this order from bottom to top, characterized in that, The semiconductor stack is formed with a light-emitting mesa, the light-emitting mesa comprises Q convex structures, and the adjacent convex structures are mutually staggered interval regions, the interval region is the first semiconductor layer structure exposed after etching the second semiconductor layer and the active layer, the convex structure is the unetched semiconductor stack, and the mutually staggered interval regions are first cross regions. The first semiconductor layer of the interval region is formed with a groove structure, the groove structure extends from the first semiconductor layer to the substrate, and the projection area of the groove structure on the plane where the first semiconductor layer is located is between 0.2 and 0.5 times the projection area of the interval region, the ratio of the projection area of the groove structure to the projection area of the interval region is between 0.2 and 1, and Q is a natural number greater than or equal to 2.

2. The light emitting diode of claim 1, wherein, The depth of the groove structure is less than or equal to the thickness of the first semiconductor layer of the interval region.

3. The light emitting diode of claim 1, wherein, The thickness of the first semiconductor layer of the interval region is H1, the groove structure has a depth H2 in the thickness direction of the first semiconductor layer, and H1 and H2 satisfy: 1 / 2≤H2 / H1≤1.

4. The light emitting diode of claim 1, wherein, The thickness of the first semiconductor layer is H3, the distance from the bottom of the groove structure to the substrate is H4, and H3 and H4 satisfy: 0≤H4 / H3≤1 / 2.

5. The light emitting diode of claim 1, wherein, The span distance of the interval region between adjacent convex structures is D1, the groove structure has a width D2 in the direction of the span distance D1, and 0<D2≤D1.

6. The light emitting diode of claim 5, wherein, The width D2 of the groove structure is between 0.5 μm and 80 μm.

7. The light emitting diode of claim 1, wherein, The cross section of the convex structure is a polygonal structure with the number of sides being greater than or equal to 3.

8. The light emitting diode of claim 5, wherein, The distance between the geometric centers of two adjacent convex structures is D3, the vertical distance from the geometric center of the convex structure to the side is D4, the convex structure is defined to have a shape parameter M, an expansion coefficient R, and a filling coefficient P, wherein the expansion coefficient R=D4 / D1, the filling coefficient P=Ʃprojection area of the convex structure / projection area of the light-emitting diode, and the shape parameter M=expansion coefficient R / filling coefficient P, and the shape parameter M is in the range of 3.5-4.

5.

9. The light emitting diode of claim 1, wherein, The groove structure is discontinuously distributed, and the groove structure does not extend to the first cross region.

10. The light emitting diode of claim 9, wherein, The groove structure is located between adjacent convex structures, and the groove structure is symmetrically distributed along the line connecting the geometric centers of two adjacent convex structures.

11. The light emitting diode of claim 9, wherein, In the extension direction of the side of the convex structure, the groove structure has a length L, the length L is greater than or equal to the vertical distance from the geometric center of the convex structure to the side and less than or equal to twice the vertical distance from the geometric center of the convex structure to the side, or the length L is greater than or equal to half the side length of the convex structure and less than or equal to the side length of the convex structure.

12. The light emitting diode of claim 1, wherein, The groove structure forms a continuous structure and has a second cross region, the second cross region is located in the first cross region, and the projection area of the first cross region is greater than the projection area of the second cross region.

13. The light emitting diode of claim 9, wherein, The first metal layer is located in the first intersection region and is electrically connected to the first semiconductor layer.

14. The light emitting diode of claim 12, wherein, The first metal layer is located in the first intersection region and is electrically connected to the first semiconductor layer, and the first metal layer fills the second intersection region.

15. The light emitting diode according to claim 13 or 14, characterized in that The overlapping area of the first metal layer and the groove structure accounts for 0% to 40% of the sum of the projected areas of the groove structure.

16. The light emitting diode of claim 13 or 14, wherein, The first dielectric layer is located above the boss structure and the first metal layer and fills at least part of the groove structure.

17. The light emitting diode of claim 16, wherein, The area of the groove structure filled by the first dielectric layer accounts for 60% to 100% of the sum of the projected areas of the groove structure.

18. The light emitting diode of claim 16, wherein, The connection electrode layer is located above the boss structure and the first metal layer, and at least part of the connection electrode layer located above the first metal layer forms a continuous chain structure, and the chain structure is located above the first dielectric layer filling the groove structure.

19. The light emitting diode of claim 1, wherein, The opening width of the groove structure is greater than the bottom width of the groove structure, and the included angle between the sidewall of the groove structure and the plane where the bottom of the groove structure is located is between 40° and 90°.

20. A light emitting device comprising: The substrate is provided with a circuit layer, and the light emitting unit comprises a light emitting diode according to any one of claims 1 to 19, and the light emitting diode is electrically connected to the circuit layer through a pad structure.

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