Capacitive biaxial accelerometer including Z-axis and method of making same

Abstract

The invention provides a capacitive biaxial accelerometer comprising a Z axis and a manufacturing method thereof. The capacitive biaxial accelerometer comprising the Z axis comprises a complementary metal oxide semiconductor substrate, a micro-electro-mechanical substrate and a cap substrate which are oppositely arranged in parallel and are bonded with each other. The MEMS substrate comprises an X-axis or Y-axis sensing structure and a Z-axis sensing structure which share four MEMS fixing anchor sets according to the packaging direction, at least one stop anchor set is located between the X-axis or Y-axis sensing structure and the Z-axis sensing structure, and the stop anchor set is provided with a spring stop protruding point and a hard stop protruding point and can achieve the two-stage stop effect.

Description

Technical Field

[0001] This invention relates to the field of microelectromechanical systems (MEMS) for detecting acceleration, and particularly to the field of a capacitive biaxial accelerometer. Background Technology

[0002] Microelectromechanical systems (MEMS) refer to mechanical and electromechanical systems whose components possess mechanical functionality, enabling rapid and accurate detection of minute changes in physical properties. Regarding Z-axis accelerometers utilizing MEMS, Taiwan Patent Publication No. I762816 discloses a Z-axis seesaw accelerometer with an embedded movable structure. The embedded movable structure can pivot or move away from the plane of the seesaw beam, thereby improving sensitivity. Taiwan Patent Publication No. I716999 discloses a design with a pivot suspended on a substrate, the pivot and the substrate separated by an unequal distance, thereby improving sensitivity. Summary of the Invention

[0003] The present invention provides a capacitive dual-axis accelerometer including a Z-axis. The movable structure of the Z-axis seesaw of the MEMS substrate is a structure set in the middle region, and the surrounding structure is a structure for performing and sensing left and right motion (X-axis). A fixed anchor group holds the movable structure of the Z-axis seesaw and holds the sensing structures at the four corners.

[0004] The present invention provides a capacitive dual-axis accelerometer including a Z-axis. The Z-axis seesaw is an asymmetrical mass block, and the stop structure and elastic stop structure form a ring around the Z-axis seesaw so that the Z-axis seesaw will not have excessive stroke when moving left and right X.

[0005] This invention provides a capacitive dual-axis accelerometer including a Z-axis, the entire structure being symmetrical about the X-axis. A stopper anchor structure is provided in the hollow area between the X-axis sensing structure and the Z-axis sensing structure. The function of the stopper anchor structure is to absorb impact force and limit the maximum stroke of the mass block during displacement.

[0006] This invention provides a capacitive dual-axis accelerometer including a Z-axis, and a stop anchor group that serves as a limit for both the outer X-mass block and the Z-mass block, with the stop anchor group having a two-stage stopping function.

[0007] A capacitive dual-axis accelerometer including a Z-axis comprises a complementary metal-oxide-semiconductor (CMOS) substrate, a microelectromechanical system (MEMS) substrate, and a cap substrate arranged parallel to each other and bonded together. The MEMS substrate comprises: an X-axis sensing structure forming a frame that encloses a cutout area; and a Z-axis sensing structure disposed within the cutout area and located at a midpoint within the area enclosed by the X-axis sensing structure, wherein the Z-axis sensing structure includes a first Z-axis mass and a second Z-axis mass. The block consists of a first Z-axis mass block and a second Z-axis mass block forming a seesaw mass block; four MEMS fixing anchor groups are disposed in the hollow area, and the plurality of MEMS fixing anchor groups are respectively located at the four corners of the area enclosed by the X-axis sensing structure, wherein each MEMS fixing anchor group includes a connecting anchor point and is fixed to the complementary metal oxide semiconductor (CMOS) substrate and the cap substrate through the connecting anchor point; a Z-hub structure is interconnected with the plurality of MEMS fixing anchor groups, wherein the Z-hub structure is located at the Z-axis sensing structure. Between the first mass block and the second mass block, and connecting the first Z-axis mass block and the second Z-axis mass block; and two stop anchor groups, which are disposed in the hollow area and respectively located between the X-axis sensing structure and the Z-axis sensing structure, wherein each stop anchor group includes: a stop anchor point, which is fixed to the complementary metal oxide semiconductor (CMOS) substrate and the cap substrate respectively; a plurality of first connecting arms and a plurality of first stop springs connecting the stop anchor point, and the stop anchor point is located between the plurality of first connecting arms and the plurality of first stop springs; Multiple first spring stop protrusions are located between the X-axis sensing structure or the Z-axis sensing structure and any of the first connecting arms, wherein each first spring stop protrusion has a first gap to a first stop surface; and multiple hard stop protrusions are located between the X-axis sensing structure or the Z-axis sensing structure and the stop anchor point, wherein each hard stop protrusion has a second gap to the first stop surface, and the first gap is greater than the second gap, wherein the first stop surface is selected from the X-axis sensing structure, the Z-axis sensing structure, the multiple first connecting arms and the stop anchor point.

[0008] A capacitive dual-axis accelerometer including a Z-axis comprises a complementary metal-oxide-semiconductor (CMOS) substrate, a microelectromechanical system (MEMS) substrate, and a cap substrate arranged in parallel opposite directions and bonded to each other. The MEMS substrate is characterized by comprising: an X-axis sensing structure forming a frame that encloses a cutout area; a Z-axis sensing structure disposed within the cutout area and located at a midpoint within the area enclosed by the X-axis sensing structure, wherein the Z-axis sensing structure includes a first Z-axis mass block and a second Z-axis mass block, and the first Z-axis mass block and the second Z-axis mass block constitute a seesaw mass block; and a stop anchor assembly disposed within the cutout area and positioned... Between the X-axis sensing structure and the Z-axis sensing structure, the stop anchor assembly includes: a stop anchor point, which is fixed to the complementary metal-oxide-semiconductor (CMOS) substrate and the cap substrate respectively; a plurality of first connecting arms and a plurality of first stop springs connecting the stop anchor point, the stop anchor point being located between the plurality of first connecting arms and the plurality of first stop springs; a plurality of first spring stop protrusions located between the X-axis sensing structure or the Z-axis sensing structure and any of the first connecting arms, wherein each of the first spring stop protrusions has a first distance to a first stop surface; and a plurality of hard stop protrusions located between the X-axis sensing structure or the Z-axis sensing structure and the stop anchor point, wherein each of the first spring stop protrusions has a first distance to a first stop surface. The rigid stop protrusion has a second distance from the first stop surface, and the first distance is greater than the second distance. The first stop surface is selected from the X-axis sensing structure, the Z-axis sensing structure, the plurality of first connecting arms, and the stop anchor point. A plurality of second connecting arms are orthogonally connected to each of the first connecting arms. A plurality of second stop springs are connected to any of the second connecting arms. A plurality of second spring stop protrusions and a plurality of second rigid stop protrusions are located between the plurality of second stop springs and the Z-axis sensing structure. A fixed anchor group is disposed in the hollow area, and the X-axis sensing structure and the Z-axis sensing structure are respectively connected to the cap substrate through the fixed anchor group. The complementary metal-oxide-semiconductor (CMOS) substrate is fixed and electrically connected, wherein the fixed anchor assembly includes: a Z-hub structure located between and connecting the first mass block and the second mass block of the Z-axis sensing structure; a plurality of cantilever structures respectively connected to the Z-hub structure and located between the first mass block and the second mass block of the Z-axis sensing structure, wherein each of the plurality of cantilever structures includes a first elastic beam and a second elastic beam orthogonal to each other; one end of the first elastic beam is connected to the Z-hub structure and the other end of the first elastic beam is connected to the second elastic beam; a plurality of Z-axis suspension assemblies are respectively connected to the plurality of second elastic beams;Multiple MEMS anchor assemblies are located at the four corners of the area enclosed by the X-axis sensing structure. These MEMS anchor assemblies are connected to the multiple Z-axis suspension assemblies. Each MEMS anchor assembly includes a mass anchor point, a first electrical connection spring, and an electrical connection anchor point. The mass anchor point is fixed to the complementary metal-oxide-semiconductor (CMOS) substrate and the cap substrate via the electrical connection anchor point. The first electrical connection spring connects the mass anchor point and the electrical connection anchor point, and the mass anchor point connects to the cap substrate.

[0009] A method for fabricating a capacitive dual-axis accelerometer including a Z-axis includes: providing the cap substrate; fusion bonding a raw substrate to the cap substrate; patterning the raw substrate to form the microelectromechanical substrate; providing the complementary metal oxide semiconductor substrate; and metal eutectic bonding the microelectromechanical substrate and the complementary metal oxide semiconductor substrate. Attached Figure Description

[0010] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, wherein:

[0011] Figure 1 This is a top view schematic diagram of the first embodiment of the structural configuration of the MEMS substrate of the present invention, including the X-axis sensing structure and the Z-axis sensing structure.

[0012] Figure 2 This is a top view schematic diagram of the first embodiment of the shared structure anchor point portion of the MEMS substrate of the present invention, including the X-elastic structure, the annular mass block, and the Z-axis sensing structure.

[0013] Figure 3 This is a top view schematic diagram of the second embodiment of the hub structure included in the MEMS substrate of the first embodiment of the present invention.

[0014] Figure 4 This is a top view schematic diagram of the third embodiment of the hub structure included in the MEMS substrate of the first embodiment of the present invention.

[0015] Figure 5 This is a top view schematic diagram of the first embodiment of the MEMS substrate of the present invention, including the X-sensing structure (X-ring mass block including sensing structure), Z-axis sensing structure, and stop anchor group.

[0016] Figure 6 for Figure 5 Enlarged schematic diagram of some components.

[0017] Figure 7 This is a top view schematic diagram of a second embodiment of the MEMS substrate of the present invention, including the X-axis sensing structure and the stop anchor group, etc.

[0018] Figure 8 This is a top view schematic diagram of the second embodiment of the structural configuration of the MEMS substrate of the present invention, including the X-axis sensing structure and the Z-axis sensing structure.

[0019] Figure 9 This is a side view of the X / Z axis accelerometer of the present invention.

[0020] Figure 10 This is a side view of another structure of the X / Z axis accelerometer of the present invention.

[0021] Figures 11 to 21 This is a schematic cross-sectional view of the manufacturing process of an embodiment of the X / Z axis accelerometer of the present invention.

[0022] Figure label:

[0023] 10-CMOS substrate

[0024] 11-CMOS bottom layer

[0025] 12-First conductive pad

[0026] 13-CMOS circuit layer

[0027] 14- Solder pad

[0028] 15-First Surface

[0029] 16-Sensing electrode plate

[0030] 17-Landing pad

[0031] 20-MEMS substrate (MEMS wafer)

[0032] 21-Openwork area

[0033] 22-First proof mass

[0034] 23-X-axis sensing structure

[0035] 24-Second mass block

[0036] 25-Z axis sensing structure

[0037] 26-Third mass block

[0038] 27-bonded structure

[0039] 30-MEMS substrate

[0040] 31-Z hinge structure

[0041] 32-Second Z-axis mass block

[0042] 33-First spring beam

[0043] 34-First mass block

[0044] 35 - Second spring beam

[0045] 36-Connecting comb anchor

[0046] 37-Movable electrode plate

[0047] 38 - Connecting comb arm

[0048] 39-Stator electrode plate

[0049] 40-Cap substrate

[0050] 41-Cap Body

[0051] 42-First cap pillar (higher)

[0052] 44-Second cap pillar

[0053] 52-First suspension structure

[0054] 53-First Mass Block

[0055] 54-Second suspension structure

[0056] 55-Z hub structure

[0057] 56-First Stop Anchor Group

[0058] 57-Second Stop Anchor Group

[0059] 58 - First suspension spring

[0060] 62-Proof mass anchor

[0061] 64-Electrical connection anchor

[0062] 65 - Cap stopper structure

[0063] 66 - First connecting spring

[0064] 67-Substrate bottom stopper structure

[0065] 68 - Second sensing spring

[0066] 71-X-axis sensing comb pair structure; 72-MEMS anchor structure.

[0067] 74 - First stopper anchor set

[0068] 76-Second Stop Anchor Group

[0069] 83-First connecting arm

[0070] 84-Stop anchor

[0071] 85-Second connecting arm

[0072] 91-First stopper spring

[0073] 92-Second stop spring

[0074] 93 - First spring stopper bump

[0075] 94-Second spring stop protrusion

[0076] 95 - First hard stopper bump

[0077] 96-Second hard stop protrusion

[0078] Gap_1 - First gap

[0079] Gap_2 - Second Gap

[0080] X, Y, Z axes

[0081] O-center

[0082] S - First stop surface Detailed Implementation

[0083] The following embodiments are illustrative. Although the following description refers to one, one, or several implementations, it is not intended that every such reference is the same implementation, or that such features are applicable only to a single implementation. Individual features of different embodiments may be combined to provide other implementations. The features of the invention will be described below by way of simple examples of various implementation device architectures in which the invention can be carried out, and only the relevant components for those examples will be described in detail. However, implementation components of accelerometers that are well known to those skilled in the art may not be specifically described herein.

[0084] Figure 1 This is a top view schematic diagram of the first embodiment of the structural configuration of the MEMS substrate of the present invention, including the X-axis sensing structure and the Z-axis sensing structure. Figure 2 This is a top view schematic diagram of the first embodiment of the shared structure anchor point portion of the MEMS substrate of the present invention, including the X-elastic structure, the annular mass block, and the Z-axis sensing structure. Figure 3 This is a top view schematic diagram of the second embodiment of the hub structure included in the MEMS substrate of the first embodiment of the present invention. Figure 4 This is a top view schematic diagram of the third embodiment of the hub structure included in the MEMS substrate of the first embodiment of the present invention. It should be noted that... Figure 1 This diagram illustrates the positional arrangement of various structures on the MEMS substrate of the present invention; therefore, some structural details may not be shown. Figure 1 Therefore, please refer to the attached diagrams for structural details.

[0085] Please refer to Figure 1 and Figure 2 The MEMS substrate 20 includes an X-axis sensing structure and a Z-axis sensing structure, and the MEMS substrate 20 also has a cutout area 21. The X-axis sensing structure includes multiple first mass blocks 22, multiple second mass blocks 24, and multiple third mass blocks 26, wherein the first mass blocks 22 and the second mass blocks 24 form a frame that encloses the cutout area 21. The Z-axis sensing structure is located at the middle position of the area enclosed by the X-axis sensing structure. Furthermore, the two third mass blocks 26 of the X-axis sensing structure are respectively connected and fixed to the first mass blocks 22 and within the cutout area 21. Therefore, the X-axis sensing structure of the first embodiment is an X-mass frame structure (proof mass frame structure) surrounding the Z-axis sensing structure.

[0086] Continued reference Figure 1 and Figure 2The Z-axis sensing structure includes a second Z-axis mass block 32, a first mass block 34, and a Z-hinge structure 31, which is connected to a first suspension structure 52 and a second suspension structure 54 via a first elastic beam 33 and a second elastic beam 35. The Z-hinge structure 31 is located between the second Z-axis mass block 32 and the first mass block 34, approximately in the middle, and the center point "O" of the frame is at the center of the Z-hinge structure 31, meaning the Z-hinge structure 31 passes through the central XY axis. The dashed lines in the figure represent the sensing electrode plate of the underlying CMOS substrate. In the first embodiment, the sensing electrode plate of the CMOS substrate is symmetrical about the central Y-axis of the MEMS substrate 20. Furthermore, the second Z-axis mass block 32 and the first mass block 34 have similar geometries but different mass sizes. In the first embodiment, the second Z-axis mass block 32 and the first mass block 34 have different geometric sizes, thus forming an asymmetric sensing structure, which constitutes a Z-sensing see-saw structure and is held by a Z-hub structure 31. The Z-axis see-saw structure forms an inertial torque difference and can rotate with the Z-hub structure 31.

[0087] Continued reference Figure 1 and Figure 2 In the first embodiment, the Z-hub structure 31 and multiple cantilever structures extend from the Z-hub structure 31 into the hollow area 21, and each cantilever structure is connected to a Z-axis suspension assembly. In the first embodiment, each cantilever structure includes a long, straight first elastic beam 33 and a strip-shaped second elastic beam 35, wherein one end of the first elastic beam 33 is connected to the Z-hub structure 31 and the other end is connected to the middle section of the second elastic beam 35. Each Z-axis suspension assembly includes two first suspension structures 52 (side beams) and a second suspension structure 54 (middle beam) connected between the two first suspension structures 52. Furthermore, both ends of the second elastic beam 35 are connected to the two first suspension structures 52, and a hollow area 21 is maintained between the second elastic beam 35 and the second suspension structure 54.

[0088] Please refer to Figure 1 , Figure 2 , Figure 3 and Figure 4 The cantilever structure and Z-axis suspension assembly of the present invention can have different forms, for example Figure 3 In the middle, the second elastic beam 35 of the cantilever structure includes multiple curved arms (spring-like) with multiple rotation angles and has a hollow area 21 between the second suspension structure 54. Figure 4In the first suspension structure 54, the second suspension structure 54 includes multiple curved beams (spring-shaped) at various corners and is directly connected to the first elastic beam 33 of the cantilever structure. The hollow area 21 exists between the first elastic beam 33, the second suspension structure 54, and the first suspension structure 52. Furthermore, independent sensing structures such as the X-axis sensing structure and the Z-axis sensing structure share multiple MEMS anchor groups 72 (MEMSanchor structure). These multiple MEMS anchor groups 72 are located at the four corners extending from the two diagonals of the Z-axis sensing structure, or in other words, the four MEMS anchor groups 72 are located at the four corners within the frame of the MEMS substrate 20. Each MEMS anchor group 72 includes a first electrically connecting spring 66, a proof mass anchor 62, and an electrically connecting anchor 64. The dashed frame of the proof mass anchor 62 in the figure represents the junction of the cap substrate and the electrical connecting anchor 64, respectively representing the junction of the CMOS substrate and the cap substrate. In the first embodiment, a first suspension spring 58 is connected between the first suspension structure 52 of the Z-axis suspension assembly and the mass block anchor point 62, wherein the first suspension spring 58 can absorb stress / strain hollowing / bending deformation from the mass block anchor point 62. For the X-axis sensing structure, the X mass block is connected to the mass block anchor point 62 of the fixed anchor assembly through a third elastic beam 68. For the Z-axis sensing structure, the first suspension structure 52, the second suspension structure 54, and the first suspension spring 58 are connected to the fixed anchor assembly through a first elastic beam 33 and a second elastic beam 35. A first electrical connection spring 66 is connected between the mass block anchor point 62 and the electrical connection anchor point 64 and is an electrical connection spring. A third elastic beam 68 is connected between the mass block anchor point 62 and the first mass block 22 of the X-axis sensing structure and is an X-sensing spring. Alternatively, the fixed anchor group can be described as being connected to the X-axis sensing structure via multiple connecting springs, and to the Z-axis sensing structure via the Z-hub structure 31. The two sides of the Z-axis suspension group are held by the mass block anchor points 62 (PM anchors) via the first suspension springs 58. Therefore, the independent X-axis sensing structure and Z-axis sensing structure share a single fixed anchor group. Thus, the fixed anchor group includes a Z-hub structure 31, multiple cantilever structures, multiple Z-axis suspension groups, and multiple MEMS fixed anchor groups. From a top-down view (XY plane) of the MEMS substrate, the X-axis sensing structure forms a frame enclosing a closed space, the Z-axis sensing structure is located in the central area, and the fixed anchor groups extend from the center to both sides, and then extend vertically to the four corners of the closed space. Furthermore, the X-axis sensing structure, Z-axis sensing structure, and fixed anchor groups are each symmetrical about the X-axis.

[0089] Figure 5This is a top view schematic diagram of a first embodiment of the MEMS substrate of the present invention, including the X-axis sensing structure, Z-axis sensing structure, and stop anchor group. Please refer to... Figure 1 , Figure 2 and Figure 5 Two stop anchor groups are respectively disposed in the hollow area 21 between the X-axis sensing structure and the Z-axis sensing structure. The two stop anchor groups can be the same or different, and include a first stop anchor group 74 and a second stop anchor group 76. The structure of the stop anchor group includes a stop anchor point, multiple connecting arms, multiple stop springs, multiple springstopper bumps (first stop bumps), and multiple hard stopper bumps (second stop bumps). In the first embodiment, a first stop anchor group 74 is provided between the third mass block 26 of the X-axis sensing structure and the first mass block 34 of the Z-axis sensing structure. This first stop anchor group 74 includes a stop anchor point 84, two first connecting arms 83, four first stop springs 91, four first springstop bumps 93, and four first hard stop bumps 95. The stop anchor point 84 is located approximately in the middle section between the third mass block 26 and the first mass block 34, and has a rectangular shape. Figure 5 The two dashed boxes in the diagram represent the joints of the lower CMOS substrate and the upper cap substrate, respectively. Two long, straight first connecting arms 83 extend from the opposite short sides of the stop anchor point 84, with one end fixed to the stop anchor point 84 and approximately parallel to the third mass block 26 and the first mass block 34. Four long, straight first stop springs 91 are respectively disposed on both sides of the two first connecting arms 83, spaced apart from the first connecting arms 83. One end of each is fixed to the stop anchor point 84 and approximately parallel to the third mass block 26 and the first mass block 34, while the other end of each is a free end. Four first spring stop protrusions 93 are respectively disposed at the free ends of the four first stop springs 91. Two of the first spring stop protrusions 93 protrude towards the first mass block 34 and are within the range of the first mass block 34, while the other two protrude towards the third mass block 26 and are within the range of the first mass block 34. Four first hard stop protrusions 95 are respectively set on the two opposite long sides of the stop anchor point 84, two of which protrude towards the first mass block 34 and are within the range of the first mass block 34, and the other two protrusions protrude towards the third mass block 26 and are within the range of the first mass block 34.

[0090] Figure 6 for Figure 5 A magnified diagram of some components. Please refer to... Figure 5 and Figure 6 A first gap (cutout area 21) between the first spring stop protrusion 93 and the third mass block 26 is denoted as Gap_1, and a second gap between the first hard stop protrusion 95 and the third mass block 26 is denoted as Gap_2. Alternatively, it can be said that there is a first gap from the first spring stop protrusion 93 to the third mass block 26 (which provides a first stop surface S), and a second gap between the first hard stop protrusion 95 and the third mass block 26 (which provides a first stop surface S). To facilitate contact with the moving third mass block 26 and to absorb contact force by bending the first stop spring 91, the first gap Gap_1 is smaller than the second gap Gap_2. When the third mass block 26 moves to the left ( Figure 6 When the plane is XY plane) moves ( Figure 6 As the third mass block 26 (marked by the arrow below it) moves closer to the adjacent stop anchor group, the first gap Gap_1 and the second gap Gap_2 decrease simultaneously. Since the first gap Gap_1 is smaller than the second gap Gap_2, the third mass block 26, which is continuously moving to the left, will first contact the first spring stop protrusion 93, causing the first stop spring 91 to bend. When the third mass block 26 moves to the point where the second gap Gap_2 is 0, the moving third mass block 26 will eventually be stopped by the first hard stop protrusion 95 because it is set on the fixed stop anchor 84.

[0091] Figure 7 This is a top view schematic diagram of a second embodiment of the MEMS substrate of the present invention, including the X-axis sensing structure and the stop anchor group, etc. Figure 5 The difference in the embodiment is that two first spring stop protrusions 93 and two first hard stop protrusions 95 are distributed on one side of the third mass block 26 of the X-sensing structure (facing the hollow area). The positions of the two first spring stop protrusions 93 correspond to the two first stop springs 91, and the two first hard stop protrusions 95 correspond to the stop anchor points 84. In this example, the distance between the first spring stop protrusions 93 and the first stop springs 91 (providing the first stop surface S) is a first gap Gap_1, and the distance between the first hard stop protrusions 95 and the stop anchor points 84 (providing the first stop surface S) is a second gap Gap_2. The first gap Gap_1 is smaller than the second gap Gap_2. Please also refer to... Figure 1 , Figure 6 and Figure 7 When the third mass block 26 moves to the left ( Figure 6 When the drawing plane is the XY plane, it moves (same as the XY plane). Figure 6If the direction of movement is not specified, the stop anchor group adjacent to the third mass block 26 still has the function of easily contacting the moving third mass block 26 and absorbing the contact force by bending the first stop spring 91. Therefore, the stop anchor group includes an elastic stop structure with two different gap sizes between the moving mass block and the spring stopper set; the first is that the spring stopper bump is between the stopper spring and the mass block, and the second is that it is located between the mass block and the immovable structure (e.g., the fixed anchor point). The spring stopper set may include a stopper structure, a stop spring, a spring stop bump, and a hard stopper on anchor. The first stop surface S is selected from the X-axis sensing structure, the Z-axis sensing structure, the first connecting arm, and the stop anchor. Therefore, the X-axis sensing structure and the Z-axis sensing structure share the first stop anchor group 74. Please also refer to... Figure 1 , Figure 5 , Figure 6 and Figure 7 As can be understood, the actuation mode and component configuration of the first stop anchor group and the first mass block 34 of the Z-axis sensing structure are as described above. When the first mass block 34 of the Z-axis sensing structure performs Z-axis rotational motion on the XY plane and horizontal X-direction movement, its relative contact and function with the first stop anchor group 74 are similar, and will not be described again here.

[0092] Continued reference Figure 1 , Figure 2 and Figure 5 In the first embodiment, a second stop anchor group 76 is provided between the third mass block 26 of the X-axis sensing structure and the second Z-axis mass block 32 of the Z-axis sensing structure. This second stop anchor group 76 includes an L-shaped elastic stop structure, comprising all the structures of the first stop anchor group 76, plus two second connecting arms 85, two second stop springs 92, two second spring stop protrusions 94, and two second hard stop protrusions 96. The stop anchor points 84 of the second stop anchor group 76 are approximately located in the middle section of the third mass block 26 and the second Z-axis mass block 32, and have a rectangular shape. Figure 5The two dashed boxes in the diagram represent the joints of the lower CMOS substrate and the upper cap substrate, respectively. Two long, straight first connecting arms 83 extend from the opposite short sides of the stop anchor point 84, with one end fixed to the stop anchor point 84 and approximately parallel to the third mass block 26 and the second Z-axis mass block 32. Four long, straight first stop springs 91 are respectively disposed on both sides of the two first connecting arms 83, spaced apart from the first connecting arms 83. One end of each is fixed to the stop anchor point 84 and approximately parallel to the third mass block 26 and the second Z-axis mass block 32, while the other end is a free end. Four first spring stop protrusions 93 are respectively disposed at the free ends of the four first stop springs 91. Two of the first spring stop protrusions 93 protrude towards the second Z-axis mass block 32 and are within the range of the second Z-axis mass block 32, while the other two first spring stop protrusions 93 protrude towards the third mass block 26 and are within the range of the first mass block 34. Four first hard stop protrusions 95 are respectively set on the two opposite long sides of the stop anchor point 84. Two of the first hard stop protrusions 95 protrude towards the first mass block 34 and are within the range of the first mass block 34, while the other two first hard stop protrusions 95 protrude towards the third mass block 26 and are within the range of the second Z-axis mass block 32.

[0093] Continued reference Figure 1 , Figure 2 and Figure 5 The second stop anchor assembly 76 includes two long, straight second connecting arms 85, each connected to one end of one of two first connecting arms 83 and perpendicular to the first connecting arms 83. The first connecting arms 83 are approximately parallel to the X-axis, and their other ends are connected to one end of a second stop spring 92. There is a gap between the second connecting arms 85 and the second stop spring 92. Furthermore, the second stop spring 92, connected to the second connecting arms 85, is approximately parallel to the first connecting arms 83. A second spring stop protrusion 94 is provided on its free end, and a second hard stop protrusion 96 is provided on its connecting end (where it connects to the second connecting arm 85). The second spring stop protrusion 94 and the second hard stop protrusion 96 face the second Z-axis mass block 32 of the Z-axis sensing structure. Similar to the first stop anchor assembly 74, the first connecting arms 83 on the second stop anchor assembly 76 provide the same contact and absorption buffering effect for the movement of the X-sensing structure in the X direction, which will not be elaborated further here. The second connecting arm 85 on the second stop anchor assembly 76 can absorb and buffer the contact impact caused by the rotation of the second Z-axis mass block 32 of the Z-axis sensing structure in the XY plane. Similarly... Figure 6 and Figure 7 As shown, it can be understood that the height of any second spring stop protrusion 94 is greater than that of any second hard stop protrusion 96, thus forming... Figure 6 and Figure 7The first gap_1 and the second gap_2 are shown in the diagram. Thus, the first connecting arm 83 and the second connecting arm 85 of the second stop anchor group 76 form an L-shaped arm, in which the parallel spring stop structures (stop spring, spring stop protrusion and hard stop protrusion) respectively restrict the displacement in the X direction and the rotation direction, and the spring stop structures are orthogonal to each other. It can also be said that the X-axis sensing structure and the Z-axis sensing structure share the second stop anchor group 76.

[0094] Continued reference Figure 1 and Figure 5 Two X-axis sensing comb pairs 71 are respectively disposed between the suspension structure and the second mass block 24 of the X-axis sensing structure, and between the two MEMS fixed anchor groups 72. Each X-axis sensing comb pair 71 includes multiple movable electrode plates 37 and corresponding fixed electrode plates 39 arranged in a comb-like structure and spaced apart from each other. The movable electrode plates 37 are connected to the second mass block 24 of the X-axis sensing structure, and the fixed electrode plates 39 are connected to the connecting comb arm 38 and the connecting comb anchor point 36, wherein one end of the connecting comb arm 38 is fixed to one side of the connecting comb anchor point 36, and Figure 5 The two dashed boxes in the connecting comb anchor point 36 represent the joints of the CMOS substrate and the cap substrate, respectively. The X-axis sensing comb pair structure 71 is electrically connected to the CMOS substrate through the connecting comb anchor point 36. The operation mode of the X-axis sensing comb pair structure 71 is known and will not be described in detail here.

[0095] Figure 8 This is a top view schematic diagram illustrating the structural configuration of the MEMS substrate of the present invention, including the X-axis sensing structure and the Z-axis sensing structure, according to a second embodiment. Please refer to... Figure 1 and Figure 8 From the perspective of the XY plane, Figure 1 The Z-hub structure 31 is located at the center O of the MEMS substrate 20 (where the X and Y axes intersect), or in other words, the Z-hub structure 31 is positioned on the central Y-axis. In contrast, Figure 8The Z-axis pivot structure 55 of the fixed anchor group is offset from the center O of the MEMS substrate 30, or in other words, the Z-axis pivot structure 55 is not located on the central Y-axis. Secondly, the length of the first mass block 53 of the Z-axis sensing structure of the MEMS substrate 30 along the Y-axis is similar to that of the second Z-axis mass block 32, but the length of the first mass block 53 along the X-axis is greater than that of the second Z-axis mass block 32. Therefore, the Z-axis sensing structure of the MEMS substrate 30 is still a movable structure of a Z-axis seesaw, wherein the first mass block 53 of the seesaw mass block is larger or heavier than the second Z-axis mass block 32. Furthermore, regarding the Z-axis sensing structure of the MEMS substrate 30, the sensing electrode plate on the CMOS substrate below the MEMS substrate 30 ( Figure 8 The second Z-axis mass block 32 and the first mass block 53 (indicated by dashed boxes) are asymmetrical about the central Y-axis of the MEMS substrate 30. Furthermore, the shapes and components of the first stop anchor group 74 and the second stop anchor group 76 in the first embodiment differ. In contrast, the shapes and components of the first stop anchor group 56 and the second stop anchor group 57 in the second embodiment are similar to those of the second stop anchor group 76 in the first embodiment. Therefore, the first stop anchor group 56 includes a stop anchor point, two first connecting arms, two second connecting arms, six first stop springs, six first spring stop protrusions, and six first hard stop protrusions, and the connection relationship of these components is the same as that of the second stop anchor group 76, that is, the first stop anchor group 56 also includes an L-shaped elastic stop structure. In addition, the positional relationship and actuation mode of the first stop anchor group 56 and the first mass block 53 are similar to the positional relationship and actuation mode of the second stop anchor group 76 and the second Z-axis mass block 32 in the first embodiment, and therefore will not be described in detail here.

[0096] Continued reference Figure 1 and Figure 8 Although the above description uses the X / Z dual-axis sensing accelerometer of the present invention relative to the X or Y axis, it is understood that the overall structure of the first and second embodiments can actually be rotated 90 degrees to serve as a Y / Z dual-axis sensing accelerometer, and the sensing axis can also be defined by the packaging direction of subsequent processes. The above description is not intended to limit the application of the present invention.

[0097] Figure 9 This is a side view of the X / Z axis accelerometer of the present invention. To facilitate explanation of the positional relationships of certain structures of the three substrates in the X and Z directions, therefore... Figure 9 Not a correspondence Figure 1 or Figure 8 Any cross-section of the MEMS substrate. Please refer to... Figure 9The X / Z axis accelerometer includes a complementary metal-oxide-semiconductor (CMOS) substrate 10, a microelectromechanical system (MEMS) substrate 20, and a cap substrate 40, which are arranged parallel to each other and bonded together. The MEMS substrate 20 is located between the CMOS substrate 10 and the cap substrate 40. The CMOS substrate 10 may include a CMOS bottom layer 11 and a CMOS circuit layer 13 on the surface of the CMOS bottom layer 11. The CMOS circuit layer 13 includes several conductive structures, such as conductive pads and conductive vias, which can be used for electrical connection, electrical conduction, or physical connection. In one embodiment, a first surface 15 of the CMOS circuit layer 13 includes one or more first conductive pads 12 that are in physical contact with the MEMS substrate 20 and the cap substrate 40 after fusion bonding. A solder pad 14 is exposed on the first surface 15 for connection with other structures. One or more sensing electrode plates 16 correspond to the Z-axis sensing structure (seesaw mass block) of the MEMS substrate 20.

[0098] Continued reference Figure 9 The cap substrate 40 may include a cap body 41 and a plurality of cap pillars and cap stoppers protruding from the cap body 41 and facing the MEMS substrate 20. In one embodiment, one or more first cap pillars 42 correspond to the first conductive pads 122 of the CMOS substrate 10 and are fixed to the CMOS substrate 10 through the MEMS substrate 20, and one or more second cap pillars 44 are fixed to the MEMS substrate 20. Furthermore, one or more second cap pillars 44 correspond to the X-axis sensing structure 23 and / or Z-axis sensing structure 25 of the MEMS substrate 20, wherein the length of the second cap pillar 44 (the depth from the cap substrate 40 towards the MEMS substrate 20) is less than that of the first cap pillar 42, or the cap substrate 40 has two cap pillars of different lengths, and the cap space formed between the cap substrate 40 and the MEMS substrate 20 has at least two different depths. When the first cap top post 42 is joined and fixed to the MEMS substrate 20, a gap is still maintained between the second cap top post 44 and the structure of the MEMS substrate 20.

[0099] Continued reference Figure 1 , Figure 2 and Figure 9The MEMS substrate 20 has two types of anchor point structures. Multiple mass block anchor points 62 serve as cap anchor point structures, which are connected and fixed to the entire movable sensing structure of the MEMS substrate 20 via elastic structures (first suspension spring 58 and third elastic beam 68). Multiple electrical connection anchor points 64 serve as electrical connection anchor point structures, which are electrically connected to the underlying CMOS circuit layer 13 via electrical connection springs (first electrical connection spring 66) and the cap anchor point structure (mass block anchor points 62). Therefore, the MEMS sensing structure's anchor point structure uses two types of anchor point structures as both a fixing structure and an electrical conduction structure. Thus, during the bonding process, since the cap anchor point structure (mass block anchor points 62) is suspended within the cap space, the risk of cracking due to bonding pressure on the cap anchor point structure (mass block anchor points 62) can be reduced. Secondly, if the electrical connection anchor structure (electrical connection anchor 64) is cracked due to bonding, its electrical connection can still be maintained and the stability of the sensing structure will not be affected, thereby improving the process yield and stability of the product.

[0100] Continued reference Figure 1 , Figure 2 and Figure 9 One or more cap stop structures 65 and substrate stop structures 67 can be respectively disposed on the upper and lower surfaces of the X-axis sensing structure 23 and / or the Z-axis sensing structure 25, that is, the cap stop structure 65 and substrate stop structure 67 can respectively face the CMOS substrate 10 or the cap substrate 40 (Z-axis direction). Figure 9 In the embodiment, the cap stop structure 65 and the substrate stop structure 67 are respectively disposed on the upper and lower surfaces of the seesaw mass block of the Z-axis sensing structure 25, wherein the cap stop structure 65 corresponds to part or all of the second cap top post 44, and the substrate stop structure 67 can correspond to the sensing electrode plate 16.

[0101] Figure 10 This is a schematic diagram of another structural side view of the X / Z axis accelerometer of the present invention. Similar. Figure 9 , Figure 10 The positional relationship of the partial structures of the three substrates in the X and Z directions is shown below. Figure 10 Not a correspondence Figure 1 or Figure 8 Any cross-section of the MEMS substrate. Please also refer to... Figure 1 , Figure 9 and Figure 10 , Figure 10 The first surface 15 of the CMOS substrate 10 further includes a landing pad 17, the position of which corresponds to the substrate stop structure 67 on the Z-axis sensing structure 25, while the X-axis sensing structure 23 (which may be a first mass block, a second mass block, or a third mass block) has a cap stop structure 65 corresponding to the second cap top post 44 on the cap substrate 40. Figure 10The acceleration motion in the Z direction causes the Z-axis sensing structure 25 to perform a seesaw motion. The second cap top post 44 is typically about 2-5 μm in size and can serve to limit the travel of the MEMS movable structure towards the cap substrate 40. Figure 10 The X-axis sensing structure 23 on the left side of the diagram lacks a cap stop structure 65. When the X-axis sensing structure 23 is subjected to force and displaces upwards, contacting the second cap top post 44, it may experience an adhesive phenomenon that cannot be released due to large-area contact. In contrast, Figure 10 The X-axis sensing structure 23 on the right side of the figure has a cap stop structure 65, which contacts the second cap top post 44 through a smaller area, thus preventing adhesion. The cap stop structure 65 on the Z-axis sensing structure 25 plays a similar role to the cap stop structure 65 on the X-axis sensing structure, and will not be described in detail here.

[0102] Continued reference Figure 1 , Figure 9 and Figure 10 On the other hand, when the Z-axis sensing structure 25 moves downwards in a seesaw motion due to acceleration in the Z-direction, the substrate stop structure 67 on the Z-axis sensing structure 25 can limit the travel of the MEMS movable structure in the direction of the CMOS substrate 10. When the MEMS movable structure comes into contact with the landing pad 17, the contact area between the two is further reduced to avoid adhesion. It is best if the landing pad 17 is electrically connected to the MEMS movable structure.

[0103] Based on the above, the entire structure of the X / Z axis accelerometer of the present invention is symmetrical about the X-axis. A stopper anchor structure is provided in the hollow area between the X-axis sensing structure and the Z-axis sensing structure. The function of the stopper anchor structure is to absorb impact force and limit the maximum stroke of the mass block in the displacement.

[0104] Figures 11 to 21 This is a schematic cross-sectional view of the manufacturing process of an embodiment of the X / Z axis accelerometer of the present invention. It should be noted that... Figures 11 to 21 The diagram illustrates the process steps and does not focus on the relationships between structures; therefore, the above... Figures 1 to 10 Individual structures of each substrate may not be shown on parts of the same step, but this does not mean that individual structures were not formed in the same step. Please also refer to... Figure 9 , Figure 10 , Figure 11 and Figure 12A cap body 41 is provided, and through general patterning steps, such as photolithography, exposure, development, and etching, first cap top posts 42 and second cap top posts 44 of different heights are formed on the surface of the cap body 41, wherein the height of the first cap top post 42 is greater than the height of the second cap top post 44. (See also...) Figure 9 , Figure 10 , Figure 13 and Figure 14 The original MEMS substrate 20 (original substrate) is bonded to the patterned cap body 49 in an appropriate manner, such as fusion bonding, and the original MEMS substrate 20 is thinned. (See also...) Figure 9 , Figure 10 , Figure 15 , Figure 16 and Figure 17 The thinned MEMS substrate 20 is deposited and patterned in an appropriate manner to form a bonding structure 27, and then a MEMS sensing structure including an X-axis sensing structure, a Z-axis sensing structure, a fixed anchor group, a stop anchor group, and a sensing comb pair structure is formed. (See also...) Figure 9 , Figure 10 , Figure 18 and Figure 19 The CMOS substrate is constructed using known methods, with a CMOS circuit layer 13 formed above the CMOS bottom layer 11, and several conductive pads 12, solder pads 14, electrode plates 16, etc., exposed through appropriate etching. (Reference) Figure 9 , Figure 10 , Figure 20 and Figure 21 In an appropriate manner, such as eutectic bonding, the combination of MEMS substrate 20 and cap substrate 40 is overlaid on CMOS substrate 10 to bond the two together. If necessary, the cap substrate 40 is thinned and the cap substrate 40 and MEMS substrate 20 are then sawn to obtain the X / Z axis accelerometer of the present invention.

[0105] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be defined by the claims.

Claims

1. A capacitive dual-axis accelerometer including a Z-axis, comprising a complementary metal-oxide-semiconductor (CMOS) substrate, a microelectromechanical system (MEMS) substrate, and a cap substrate arranged in parallel opposite directions and bonded to each other, characterized in that, The microelectromechanical (MEMS) substrate includes: An X-axis sensing structure forms a frame that encloses a cutout area. A Z-axis sensing structure is disposed in the hollow area and located at a middle position within the area enclosed by the X-axis sensing structure. The Z-axis sensing structure includes a first Z-axis mass block and a second Z-axis mass block, and the first Z-axis mass block and the second Z-axis mass block constitute a seesaw mass block. Four MEMS fixing anchors are disposed in the hollow area. The multiple MEMS fixing anchors are located at the four corners of the area enclosed by the X-axis sensing structure. Each MEMS fixing anchor includes a connecting anchor point and is fixed to the complementary metal oxide semiconductor (CMOS) substrate and the cap substrate through the connecting anchor point. A Z-hub structure and the plurality of MEMS fixed anchor groups are interconnected, wherein the Z-hub structure is located between the first mass block and the second mass block of the Z-axis sensing structure, and connects the first Z-axis mass block and the second Z-axis mass block; as well as Two stop anchor assemblies are disposed in the hollow area and located between the X-axis sensing structure and the Z-axis sensing structure, respectively, wherein each stop anchor assembly includes: A stop anchor point is fixed to the complementary metal oxide semiconductor (CMOS) substrate and the cap substrate, respectively; Multiple first connecting arms and multiple first stop springs are connected to the stop anchor point, and the stop anchor point is located between the multiple first connecting arms and the multiple first stop springs; Multiple first spring stop protrusions are located between the X-axis sensing structure or the Z-axis sensing structure and any of the first connecting arms, wherein each first spring stop protrusion has a first distance from a first stop surface; as well as Multiple hard stop protrusions are located between the X-axis sensing structure or the Z-axis sensing structure and the stop anchor point, wherein each hard stop protrusion has a second distance from the first stop surface, and the first distance is greater than the second distance. The first stop surface is selected from the X-axis sensing structure, the Z-axis sensing structure, the multiple first connecting arms and the stop anchor point.

2. The capacitive dual-axis accelerometer including a Z-axis as described in claim 1, characterized in that, Each of the plurality of stop anchor assemblies further includes a plurality of second connecting arms, a plurality of second stop springs, a plurality of second spring stop protrusions, and a plurality of second hard stop protrusions, wherein each of the second connecting arms is orthogonally connected to each of the first connecting arms; each of the second stop springs is connected to any of the second connecting arms and is located between the connected second connecting arm and the Z-axis sensing structure; the plurality of second spring stop protrusions and the plurality of second hard stop protrusions are each disposed on the plurality of second stop springs, and the plurality of second spring stop protrusions and the plurality of second hard stop protrusions are located between the plurality of second stop springs and the Z-axis sensing structure, and the height of any of the second spring stop protrusions is greater than that of any of the second hard stop protrusions.

3. The capacitive dual-axis accelerometer including a Z-axis as described in claim 1, characterized in that, It also includes multiple cantilever structures and multiple Z-axis suspension assemblies, wherein the multiple cantilever structures are respectively connected to the Z-hub structure and located between the first Z-axis mass block and the second Z-axis mass block of the Z-axis sensing structure, and the multiple cantilever structures and the four MEMS fixed anchor assemblies are connected through the multiple Z-axis suspension assemblies.

4. The capacitive dual-axis accelerometer including a Z-axis as described in claim 3, characterized in that, Each of the MEMS fixed anchor groups further includes an electrical connection anchor point, a first electrical connection spring, and a mass block anchor point, and the Z-axis suspension group and the mass block anchor point are connected through a first suspension spring; and the mass block anchor point and the electrical connection anchor point are connected through the first electrical connection spring.

5. The capacitive dual-axis accelerometer including a Z-axis as described in claim 3, characterized in that, It also includes multiple X-axis sensing comb pairs, which are disposed in the hollow area and each is located between the X-axis sensing structure and any of the Z-axis suspension groups, and each X-axis sensing comb pair includes multiple movable electrode plates connected to the X-axis sensing structure.

6. The capacitive dual-axis accelerometer including a Z-axis as described in claim 1, characterized in that, The cap substrate includes a plurality of cap top posts and a plurality of cap stop structures facing the microelectromechanical (MEMS) substrate, and the cap substrate and the microelectromechanical (MEMS) substrate are connected through the plurality of cap top posts; the positions of the plurality of cap stop structures correspond to the X-axis sensing structure or the Z-axis sensing structure; and the depth of the plurality of cap stop structures is less than the depth of the plurality of cap stop structures.

7. The capacitive dual-axis accelerometer including a Z-axis as described in claim 6, characterized in that, It further includes multiple cap stop structures disposed on the X-axis sensing structure and / or the Z-axis sensing structure, wherein the multiple cap stop structures face the cap substrate and correspond to the multiple cap top posts.

8. The capacitive dual-axis accelerometer including a Z-axis as described in claim 1, characterized in that, It further includes multiple substrate stop structures disposed on the first Z-axis mass block and / or the second Z-axis mass block of the Z-axis sensing structure, wherein the multiple substrate stop structures face the complementary metal oxide semiconductor (CMOS) substrate.

9. A capacitive dual-axis accelerometer including a Z-axis, characterized in that, The system comprises a complementary metal-oxide-semiconductor (CMOS) substrate, a microelectromechanical system (MEMS) substrate, and a cap substrate, which are arranged in parallel opposite directions and bonded to each other. The MEMS substrate comprises: An X-axis sensing structure forms a frame that encloses a cutout area. A Z-axis sensing structure is disposed in the hollow area and located at a middle position within the area enclosed by the X-axis sensing structure. The Z-axis sensing structure includes a first Z-axis mass block and a second Z-axis mass block, and the first Z-axis mass block and the second Z-axis mass block constitute a seesaw mass block. A stop anchor assembly is disposed in the hollow area and located between the X-axis sensing structure and the Z-axis sensing structure, wherein the stop anchor assembly includes: A stop anchor point is fixed to the complementary metal oxide semiconductor (CMOS) substrate and the cap substrate, respectively; Multiple first connecting arms and multiple first stop springs are connected to the stop anchor point, and the stop anchor point is located between the multiple first connecting arms and the multiple first stop springs; Multiple first spring stop protrusions are located between the X-axis sensing structure or the Z-axis sensing structure and any of the first connecting arms, wherein each first spring stop protrusion has a first distance from a first stop surface; Multiple hard stop protrusions are located between the X-axis sensing structure or the Z-axis sensing structure and the stop anchor point, wherein each hard stop protrusion has a second distance from the first stop surface, and the first distance is greater than the second distance. The first stop surface is selected from the X-axis sensing structure, the Z-axis sensing structure, the multiple first connecting arms and the stop anchor point. Multiple second connecting arms, each of which is orthogonally connected to each of the first connecting arms; A plurality of second stop springs, each of the second stop springs being connected to any of the second connecting arms; and Multiple second spring stop protrusions and multiple second hard stop protrusions are located between the multiple second stop springs and the Z-axis sensing structure; and A fixed anchor assembly is disposed in the cutout area. The X-axis sensing structure and the Z-axis sensing structure are fixed to the cap substrate and electrically connected to the complementary metal-oxide-semiconductor (CMOS) substrate through the fixed anchor assembly, respectively. The fixed anchor assembly includes: A Z-axis pivot structure is located between the first mass block and the second mass block of the Z-axis sensing structure, and connects the first mass block and the second mass block; Multiple cantilever structures are respectively connected to the Z-hub structure and located between the first mass block and the second mass block of the Z-axis sensing structure, wherein each of the multiple cantilever structures includes a first elastic beam and a second elastic beam orthogonal to each other; one end of the first elastic beam is connected to the Z-hub structure and the other end of the first elastic beam is connected to the second elastic beam; Multiple Z-axis suspension assemblies are respectively connected to the multiple second elastic beams; and Multiple MEMS anchor groups are located at the four corners of the area enclosed by the X-axis sensing structure. The multiple MEMS anchor groups are connected to the multiple Z-axis suspension groups. Each MEMS anchor group includes a mass block anchor point, a first electrical connection spring, and an electrical connection anchor point. It is fixed to the complementary metal oxide semiconductor (CMOS) substrate and the cap substrate through the electrical connection anchor point. The mass block anchor point and the electrical connection anchor point are connected through the first electrical connection spring, and the cap substrate is connected through the mass block anchor point.

10. A method for manufacturing a capacitive dual-axis accelerometer including a Z-axis as described in any one of claims 1 to 9, characterized in that, include: Provide the cap substrate; A primary substrate is fused onto the cap substrate; The original substrate is patterned to form the microelectromechanical substrate; This complementary metal oxide semiconductor substrate is provided; as well as The microelectromechanical substrate and the complementary metal oxide semiconductor substrate are bonded together by a metal eutectic bonding.

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