Pulse power amplifier and pulse radiator

Abstract

This invention relates to the field of power amplifier technology, specifically disclosing a pulsed power amplifier and a pulsed radiator. This invention accurately reflects the actual heating state of the devices by acquiring the temperature distribution of each stage of the power amplifier in real time and judging sensor delay. With the help of a hotspot identification and temperature prediction module, it can identify real hotspot areas and predict over-temperature risks based on temperature trends, achieving early protection and reducing the probability of power transistor or synthesizer link damage. Based on temperature distribution parameter analysis, it monitors delay and the impact of environmental disturbances, and verifies and determines the location of monitored hotspots, improving the accuracy of temperature control and hotspot identification. The pulsed radiator correlates temperature anomalies with radiation parameter fluctuations, identifies the dominant influencing factors, and ensures accurate and stable microwave output. Overall, it achieves real-time monitoring and predictive protection of temperature anomalies and radiation output, triggering protection actions in advance and improving operational safety and reliability.

Description

Technical Field

[0001] This invention relates to the field of power amplifier technology, and more specifically, to pulse power amplifiers and pulse radiators. Background Technology

[0002] In high-power pulsed microwave transmission systems, the components in each stage of the pulsed power amplifier experience rapid transient temperature rises and complex heat conduction characteristics under the influence of peak pulses. Existing temperature monitoring methods generally suffer from inconsistent response speeds, complex thermal coupling paths, and data lag, making it difficult to accurately reflect the actual heating state. Furthermore, factors such as external ambient temperature, fluctuations in the cooling airflow, and heat accumulation in the chassis can significantly disturb temperature sensor readings, making it difficult for the system to distinguish between ambient temperature rise and component self-heating, thus failing to accurately identify the true hot spot location. In addition, current technologies lack predictive mechanisms for temperature changes in hot spot areas, failing to anticipate potential over-temperature risks based on temperature change trends. This leads to delayed protection actions and potential safety hazards such as power transistor failure or synthesis link damage. Moreover, the pulse radiator, as the final microwave radiation output terminal, is highly sensitive to temperature changes, and existing systems cannot establish an effective correlation between temperature anomalies and radiation output parameters, nor can they identify the dominant factors causing fluctuations in radiation parameters, thus making it difficult to ensure the accuracy and stability of the radiation output.

[0003] Therefore, it is necessary to provide a pulse power amplifier and a pulse radiator to solve the above-mentioned technical problems. In order to solve the above problems, a technical solution is provided. Summary of the Invention

[0004] To overcome the aforementioned deficiencies of the prior art, the present invention provides a pulse power amplifier and a pulse radiator to solve the problems in high-power pulse microwave transmission systems where existing temperature monitoring responses are lagging and susceptible to environmental interference, making it impossible to accurately identify the actual hot spots of devices and predict over-temperature risks, and also difficult to correlate temperature anomalies with pulse radiation output, resulting in protection lag and radiation instability.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] The pulse power amplifier includes a pre-stage driver module, a secondary driver module, a final stage synthesizer module, forward and reverse couplers, and a multi-layer temperature monitoring module.

[0007] The preamplifier module includes a power divider, detector, amplifier, and electrically adjustable attenuator;

[0008] The secondary drive module includes an amplifier;

[0009] The final stage synthesis module includes a 16-channel waveguide power divider, a 16-channel waveguide synthesizer, a 4-channel microstrip power divider, a 4-channel microstrip synthesizer, and an amplifier;

[0010] The multi-layer temperature monitoring module is used to acquire temperature distribution parameters through temperature sensors, analyze the impact of delayed monitoring and environmental disturbances based on the temperature distribution parameters, and verify and determine the location of monitoring hotspots.

[0011] As a further embodiment of the present invention, the multi-layer temperature monitoring module includes several temperature sensors, a hierarchical temperature delay monitoring module, a hot spot determination module, and a temperature prediction and identification module.

[0012] Several temperature sensors are used to monitor and acquire the first temperature distribution parameters of the front-end drive module, the secondary drive module, the final synthesis module, and the forward and reverse couplers, and to acquire the second temperature distribution parameters of the working environment.

[0013] The hierarchical temperature delay monitoring module is used to perform sensitivity analysis based on the first temperature distribution parameter to determine whether there is a delay in the acquisition of parameters from the corresponding temperature sensor.

[0014] The hotspot identification module is used to analyze the impact of environmental disturbances using the first temperature distribution parameter and the second temperature distribution parameter, and to identify hotspot areas.

[0015] The temperature prediction and identification module is used to extract hotspot areas with parameter acquisition delays, obtain the corresponding first temperature sequence and third temperature sequence, input the first temperature sequence and third temperature sequence into the temperature prediction and identification strategy, output the temperature anomaly correlation factor, and trigger early protection based on the temperature correlation factor.

[0016] As a further aspect of the present invention, the hierarchical temperature delay monitoring module is used to perform sensitivity analysis based on the first temperature distribution parameter to determine whether there is a delay in the acquisition of the parameters of the corresponding temperature sensor. The specific steps are as follows:

[0017] The first temperature distribution parameter is extracted during the monitoring period and arranged in time sequence to obtain the first temperature sequence. The temperature distribution parameter under normal operating conditions is obtained as the third temperature distribution parameter and arranged in time sequence to obtain the second temperature sequence.

[0018] The temperature sensitivity coefficient is calculated by comparing the first temperature sequence and the second temperature sequence, and the parameter acquisition of the corresponding temperature sensor is determined based on the temperature sensitivity coefficient.

[0019] The temperature sensitivity coefficient is compared with a preset sensitivity threshold. If the temperature sensitivity coefficient is greater than or equal to the preset sensitivity threshold, there is a delay in the acquisition of the corresponding temperature sensor parameters; if the temperature sensitivity coefficient is less than the preset sensitivity threshold, there is no delay in the acquisition of the corresponding temperature sensor parameters.

[0020] As a further aspect of the present invention, the hotspot determination module is used to analyze the impact of environmental disturbances using a first temperature distribution parameter and a second temperature distribution parameter, and to identify hotspot areas. The specific steps are as follows:

[0021] Based on the second temperature distribution parameters, the third temperature sequence is obtained by sorting them according to time sequence. The disturbance influence factors of the ambient temperature are analyzed. A hotspot area identification model is constructed based on the first temperature sequence and the disturbance influence factors. The hotspot area identification coefficient is obtained. The hotspot area is identified based on the hotspot area identification coefficient.

[0022] The hotspot area identification coefficient is compared with the preset identification threshold. If the hotspot area identification coefficient is greater than or equal to the preset identification threshold, the corresponding module is marked as a hotspot area; if the hotspot area identification coefficient is less than the preset identification threshold, the corresponding module is marked as a non-hotspot area.

[0023] As a further aspect of the present invention, early protection is triggered based on a temperature correlation factor, specifically by comparing the temperature correlation factor with a preset correlation threshold range. If the temperature correlation factor is within the preset correlation threshold range, early protection is not triggered; otherwise, early protection is triggered.

[0024] A pulse radiator, comprising a radiator, an output parameter monitoring module, and an output parameter fluctuation accurate analysis module;

[0025] The radiator is used to convert the output signal of the pulse power amplifier into radiation parameters;

[0026] The output parameter monitoring module is used to acquire the radiation parameters of the radiator;

[0027] The accurate analysis module for radiation parameter fluctuations is used to analyze and determine the dominant influencing factors based on the fluctuations in radiation parameters.

[0028] As a further aspect of the present invention, the output parameter monitoring module is used to acquire the radiation parameters of the radiator, the radiation parameters including the following:

[0029] When there is a delay in parameter acquisition, the radiation parameters of the radiator are marked as the first radiation parameters;

[0030] When hotspot areas exist, the radiation parameters of the radiator are labeled as the second radiation parameter;

[0031] When both parameter acquisition delay and hotspot areas exist simultaneously, the radiation parameters of the radiator are marked as the third radiation parameter.

[0032] As a further aspect of the present invention, the output parameter fluctuation accurate analysis module is used to analyze and determine the dominant influencing factors based on the fluctuation of radiation parameters. The specific steps are as follows:

[0033] The first radiation parameter within the monitoring period is arranged in time to form the first radiation sequence, the second radiation parameter is arranged in time to form the second radiation sequence, and the third radiation parameter is arranged in time to form the third radiation sequence.

[0034] By establishing a first-level joint matching model between the first radiation sequence and the second radiation sequence, the first operational correlation factor is output.

[0035] By establishing a two-level joint matching model between the second and third radiation sequences, the second operational correlation factor is output.

[0036] The dominant influencing factors are determined based on the first operational correlation factor and the second operational correlation factor.

[0037] As a further aspect of the present invention, the dominant influencing factor is determined based on the first operational correlation factor and the second operational correlation factor, and the specific steps are as follows:

[0038] The first operational correlation factor and the second operational correlation factor are compared with preset correlation thresholds. If the first operational correlation factor is greater than or equal to the preset correlation threshold, while the second operational correlation factor is less than the preset correlation threshold, the dominant influencing factor is parameter acquisition delay. If the first operational correlation factor is less than the preset correlation threshold, while the second operational correlation factor is greater than or equal to the preset correlation threshold, the dominant influencing factor is hotspot area. If both the first and second operational correlation factors are greater than or equal to the preset correlation threshold, the dominant influencing factor is mixed, meaning that both parameter acquisition delay and hotspot area are dominant factors. If both the first and second operational correlation factors are less than the preset correlation threshold, the dominant influencing factors are excluded as parameter acquisition delay or hotspot area.

[0039] The technical effects and advantages of the pulse power amplifier and pulse radiator of this invention are as follows: This invention, through multi-layer temperature sensors and a hierarchical temperature delay monitoring module, can acquire the temperature distribution parameters of each stage of the power amplifier devices in real time and determine whether there is a delay in the sensor readings, thereby accurately reflecting the actual heating state of the devices. With the help of a hotspot identification module and a temperature prediction and recognition module, it can not only identify real hotspot areas but also predict potential overheating risks based on temperature trends, achieving early protection and reducing the probability of power transistor or synthesizing link damage. By analyzing the disturbances to temperature readings caused by changes in ambient temperature, fluctuations in the heat dissipation airflow, and heat accumulation in the chassis, it can distinguish between device self-heating and ambient temperature rise, improving the accuracy of hotspot identification and temperature control. The pulse radiator, in conjunction with the output parameter monitoring module and fluctuation analysis module, establishes a correlation between temperature anomalies and radiation parameter fluctuations, identifying the dominant factors causing radiation fluctuations and ensuring the accuracy and stability of microwave radiation output. Through real-time monitoring and predictive protection of temperature anomalies and radiation output, protection actions can be triggered in advance to avoid equipment overheating or damage, improving the overall safety and reliability of the system. Attached Figure Description

[0040] Figure 1 This is a schematic diagram of the structure of a pulse power amplifier provided in an embodiment of the present invention;

[0041] Figure 2 This is a schematic diagram of the internal structure of the front-end drive module provided in an embodiment of the present invention;

[0042] Figure 3 This is a schematic diagram of the internal structure of the final-stage synthesis module provided in an embodiment of the present invention;

[0043] Figure 4 This is a schematic diagram of the structure of a pulse radiator provided in an embodiment of the present invention. Detailed Implementation

[0044] The technical solutions of this invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described technical solutions are only a part of this invention, and not all of it. All other technical solutions obtained by those skilled in the art based on the technical solutions of this invention without inventive effort are within the scope of protection of this invention.

[0045] like Figure 1The diagram shown is a schematic diagram of the pulse power amplifier provided in an embodiment of the present invention. The pulse power amplifier includes a pre-stage driving module, a secondary driving module, a final stage combining module, a forward and reverse coupler, and a multi-layer temperature monitoring module. The pre-stage driving module is connected to the secondary driving module, the secondary driving module is connected to the final stage combining module, the final stage combining module is connected to the forward and reverse coupler, and the pre-stage driving module, the secondary driving module, the final stage combining module, and the forward and reverse coupler are respectively connected to the multi-layer temperature monitoring module.

[0046] The preamplifier module includes a power divider, detector, amplifier, and electrically adjustable attenuator;

[0047] The secondary drive module includes an amplifier;

[0048] The final stage synthesis module includes a 16-channel waveguide power divider, a 16-channel waveguide synthesizer, a 4-channel microstrip power divider, a 4-channel microstrip synthesizer, and an amplifier;

[0049] The multi-layer temperature monitoring module is used to acquire temperature distribution parameters through temperature sensors, analyze the impact of delayed monitoring and environmental disturbances based on the temperature distribution parameters, and verify and determine the location of monitoring hotspots.

[0050] It should be noted that the main function of the preamplifier module is to amplify the input signal from 0dBm to a level not lower than the preset input signal of 26dBm, and it also features adjustable gain and input signal detection. A schematic diagram of the internal structure of the preamplifier module is shown below. Figure 2 As shown, the amplifier includes a primary amplifier and a secondary amplifier. The power divider is connected to the detector, the primary amplifier, and the secondary amplifier. The primary amplifier is connected to an electrically adjustable attenuator, and the electrically adjustable attenuator is connected to the secondary amplifier. The initial input signal of 0dBm is amplified through gain distribution, attenuation adjustment, and multiple stages to ultimately achieve an output power of no less than 26dBm. Simultaneously, it integrates adjustable gain and real-time input signal detection capabilities to ensure system flexibility and operational stability.

[0051] The secondary driver module's main function is to amplify the preset input signal of 26dBm to no less than 44dBm, while maintaining high stability.

[0052] The internal structure diagram of the final-stage synthesis module is shown below. Figure 3 As shown, a 6-level binary synthesis architecture is adopted. First, the 44dBm input signal is evenly distributed through 16 waveguide power dividers. After multiple amplification and intermediate synthesis stages, the signal is then combined by 4 microstrip synthesizers, and finally the output power of the signal is increased to no less than 64dBm. The overall system has high stability.

[0053] Preferably, the multi-layer temperature monitoring module includes several temperature sensors, a hierarchical temperature delay monitoring module, a hotspot determination module, and a temperature prediction and identification module; the several temperature sensors are respectively connected to the hierarchical temperature delay monitoring module and the hotspot determination module, and the hierarchical temperature delay monitoring module and the hotspot determination module are respectively connected to the temperature prediction and identification module.

[0054] Several temperature sensors are used to monitor and acquire the first temperature distribution parameters of the front-end drive module, the secondary drive module, the final synthesis module, and the forward and reverse couplers, and to acquire the second temperature distribution parameters of the working environment.

[0055] The hierarchical temperature delay monitoring module is used to perform sensitivity analysis based on the first temperature distribution parameter to determine whether there is a delay in the acquisition of parameters from the corresponding temperature sensor.

[0056] The hotspot identification module is used to analyze the impact of environmental disturbances using the first temperature distribution parameter and the second temperature distribution parameter, and to identify hotspot areas.

[0057] The temperature prediction and identification module is used to extract hotspot areas with parameter acquisition delays, obtain the corresponding first temperature sequence and third temperature sequence, input the first temperature sequence and third temperature sequence into the temperature prediction and identification strategy, output the temperature anomaly correlation factor, and trigger early protection based on the temperature correlation factor.

[0058] In this embodiment of the invention, the pre-stage driver module, secondary driver module, final stage synthesizer module, and forward / reverse couplers are respectively connected to a multi-layer temperature monitoring module to achieve real-time monitoring of the operating temperature of each stage module. The pre-stage driver module includes a power divider, detector, amplifier, and electrically adjustable attenuator, used to complete the pre-stage amplification and amplitude adjustment of the input pulse signal; the secondary driver module includes one or more stages of amplifiers, used to further enhance the power of the pre-stage output; the final stage synthesizer module includes 16-channel waveguide power dividers, 16-channel waveguide synthesizers, 4-channel microstrip power dividers, 4-channel microstrip synthesizers, and multiple final stage amplifiers, used to distribute, synthesize, and output high-power pulse signals from the multiple amplified pulse signals.

[0059] The multi-layer temperature monitoring module is used for hierarchical temperature acquisition, delay analysis, environmental disturbance identification, and hotspot prediction of each stage component of the pulse power amplifier. It includes several temperature sensors, a hierarchical temperature delay monitoring module, a hotspot identification module, and a temperature prediction and identification module. Several temperature sensors are respectively deployed at key heat-generating components in the pre-stage drive module, secondary drive module, final stage synthesis module, and forward and reverse couplers to collect the first temperature distribution parameters of each structure. Simultaneously, temperature sensors are deployed on the equipment casing or in the ambient environment to collect the second temperature distribution parameters, reflecting changes in the external environment. Based on the acquired first temperature distribution parameters, the hierarchical temperature delay monitoring module performs sensitivity analysis, considering the characteristics of different module materials, heat capacity, and heat conduction paths, to determine whether there is hysteresis or abnormal deviation in the temperature response of the corresponding temperature sensors.

[0060] The hotspot identification module compares the first and second temperature distribution parameters to determine whether the temperature rise is caused by environmental disturbances, and further identifies the location and heat diffusion range of the actual hotspot area. The temperature prediction and identification module, for hotspot areas with parameter acquisition delays, acquires both the first temperature sequence and the third temperature sequence after delay compensation, and inputs them into the temperature prediction and identification strategy. Through sequence correlation analysis and trend prediction algorithms, it outputs a temperature anomaly correlation factor. When the temperature anomaly correlation factor reaches a preset threshold, it automatically triggers early protection actions, including reducing the transmit duty cycle, limiting peak power, or shutting down the corresponding module, thereby preventing device damage before the hotspot temperature reaches a dangerous threshold and achieving proactive safety protection for the pulse power amplifier.

[0061] Preferably, the hierarchical temperature delay monitoring module is used to perform sensitivity analysis based on the first temperature distribution parameter to determine whether there is a delay in the acquisition of parameters from the corresponding temperature sensor. The specific steps are as follows:

[0062] The first temperature distribution parameter is extracted during the monitoring period and arranged in time sequence to obtain the first temperature sequence. The temperature distribution parameter under normal operating conditions is obtained as the third temperature distribution parameter and arranged in time sequence to obtain the second temperature sequence.

[0063] The temperature sensitivity coefficient is calculated by comparing the first and second temperature sequences. Based on the temperature sensitivity coefficient, it is determined whether there is a delay in the parameter acquisition of the corresponding temperature sensor. The formula for calculating the temperature sensitivity coefficient is:

[0064] ;

[0065] In the formula: For temperature sensitivity coefficient, To monitor the number of time points, Let i be the first temperature distribution parameter at time i in the first temperature sequence. This represents the mean value of the third temperature distribution parameter in the second temperature sequence. It is the maximum value in the second temperature sequence. This is the minimum value in the second temperature sequence;

[0066] The temperature sensitivity coefficient is compared with a preset sensitivity threshold. If the temperature sensitivity coefficient is greater than or equal to the preset sensitivity threshold, there is a delay in the acquisition of the corresponding temperature sensor parameters; if the temperature sensitivity coefficient is less than the preset sensitivity threshold, there is no delay in the acquisition of the corresponding temperature sensor parameters.

[0067] In one embodiment of the present invention, taking a temperature sensor arranged on the waveguide power synthesizer of the final-stage synthesis module as an example, the method of the hierarchical temperature delay monitoring module for determining whether there is a delay in the temperature acquisition of the sensor based on temperature distribution parameters is explained. First, within the continuous operating cycle of the pulse power amplifier, the real-time temperature value output by the sensor is recorded at a fixed sampling period. The temperature data acquired during the monitoring period are arranged in the sampling order to generate a first temperature sequence, which reflects the actual temperature rise change of the power synthesizer under high-power pulse conditions. Simultaneously, the no-delay temperature change curve under normal heat dissipation conditions is retrieved from the device's historical calibration data and arranged in the same time sequence to obtain a second temperature sequence, which reflects the normal heating rate and temperature fluctuation range of the power synthesizer under standard operating conditions.

[0068] Subsequently, based on the two temperature sequences mentioned above, a comparative analysis method was used to calculate the temperature sensitivity coefficient. In the calculation process, the deviation of the real-time temperature from the average normal temperature was averaged over the monitoring time, and the deviation was normalized to the normal temperature change range so that the calculation results reflected whether the temperature change showed a significant lag characteristic that exceeded the normal range.

[0069] In actual operation, when the power synthesizer heats up rapidly and the temperature sensor reading on the waveguide power synthesizer of the final-stage synthesis module rises significantly lower than the normal temperature rise reference value, i.e., the first temperature sequence deviates significantly from the second temperature sequence, the calculated temperature sensitivity coefficient will increase significantly. For example, during the continuous increase of pulse peak power, the temperature of the power synthesizer's metal cavity rises rapidly, but the temperature sensor on the waveguide power synthesizer of the final-stage synthesis module, due to its long heat conduction path or slow sensor response speed, cannot capture the true temperature rise in a short time, causing the change rate of the first temperature sequence to lag significantly behind that of the second temperature sequence. At this time, if the calculated temperature sensitivity coefficient is greater than or equal to the sensitivity threshold set by the system, the hierarchical temperature delay monitoring module will determine that the temperature response of the temperature sensor on the waveguide power synthesizer of the final-stage synthesis module is delayed, indicating that the temperature it collects cannot accurately reflect the true thermal load of the device.

[0070] Conversely, if the temperature monitored by the temperature sensor on the waveguide power synthesizer of the final synthesis module is consistent with the temperature change curve under normal operating conditions, that is, the change trends of the first temperature sequence and the second temperature sequence are similar, then the calculated temperature sensitivity coefficient will remain at a low level, less than the preset sensitivity threshold. At this time, it is determined that there is no delay in the temperature acquisition of the temperature sensor on the waveguide power synthesizer of the final synthesis module, and its output can be used as an effective basis for the analysis of the real temperature distribution and subsequent hot spot prediction.

[0071] As can be seen from the above examples, the hierarchical temperature delay monitoring module can effectively identify the response lag of temperature sensors in different modules, ensure the reliability of temperature data, and provide an accurate basis for subsequent hotspot identification and early protection decisions.

[0072] Preferably, the hotspot determination module is used to analyze the impact of environmental disturbances using a first temperature distribution parameter and a second temperature distribution parameter, and to identify hotspot areas. The specific steps are as follows:

[0073] Based on the second temperature distribution parameters, the third temperature sequence is obtained by sorting them according to time sequence. The disturbance influence factors of the ambient temperature are analyzed. A hotspot area identification model is constructed based on the first temperature sequence and the disturbance influence factors. The hotspot area identification coefficient is obtained. The hotspot area is identified based on the hotspot area identification coefficient.

[0074] The hotspot area identification coefficient is compared with the preset identification threshold. If the hotspot area identification coefficient is greater than or equal to the preset identification threshold, the corresponding module is marked as a hotspot area; if the hotspot area identification coefficient is less than the preset identification threshold, the corresponding module is marked as a non-hotspot area.

[0075] The formula for calculating the disturbance impact factor is:

[0076] ;

[0077] In the formula: Let be the disturbance influence factor at time i. Let i+1 be the second temperature distribution parameter. Let i be the second temperature distribution parameter at time i. The maximum value of the third temperature sequence. It is the minimum value of the third temperature sequence.

[0078] A hotspot region identification model is constructed based on the first temperature sequence and the disturbance influence factor to obtain the hotspot region identification coefficient. The specific formula for the hotspot region identification model is as follows:

[0079] ;

[0080] In the formula: This is the hotspot area identification coefficient. Let i+1 be the temperature distribution parameter of the first temperature in the first temperature sequence. This represents the mean value of the first temperature distribution parameter in the first temperature sequence.

[0081] In one embodiment of the present invention, the specific working process of the hotspot determination module is illustrated using a temperature sensor group arranged on the surface of a waveguide synthesizer in the final-stage synthesis module as an example. First, during equipment operation, the second temperature distribution parameters output by the ambient temperature sensor are continuously collected, and a third temperature sequence is obtained according to the sampling time sequence. This sequence is used to characterize the dynamic changes in the operating environment temperature within the monitoring period. To further analyze the impact of ambient temperature changes on device temperature, a disturbance influence factor is constructed using the adjacent differences in the ambient temperature sequence. This factor reflects the rate and magnitude of ambient temperature changes and is normalized to establish a unified evaluation scale with device temperature changes. For example, when the ambient temperature at the equipment operating location suddenly rises due to the air conditioner stopping or an external heat source approaching, the disturbance influence factor will increase significantly, indicating a strong external interference component in the current temperature fluctuation.

[0082] Subsequently, real-time temperature data from temperature sensors deployed in the power synthesizer is retrieved and sequentially generated into a first temperature sequence to reflect the device's thermal trajectory. During hotspot identification, both the device's temperature rise rate and environmental disturbances are considered. By constructing a hotspot region identification model, it can be used to determine whether the device's temperature change is primarily caused by internal heating rather than external temperature disturbances. For example, if the ambient temperature fluctuates only slightly in the short term, but the power synthesizer temperature rises rapidly, the identification coefficient will increase significantly; conversely, if the power synthesizer temperature rises relatively steadily but the ambient temperature changes rapidly, the hotspot region identification coefficient will tend to be lower.

[0083] After calculating the hotspot identification coefficient, it is compared with a preset hotspot identification threshold. If the hotspot identification coefficient is greater than or equal to the threshold, the power synthesizer is judged to have significant self-heating behavior and is marked as a hotspot area. For example, during the continuous transmission of high-power pulses, a certain power amplifier unit may experience excessively rapid temperature rise due to load imbalance or increased internal losses. In this case, the temperature rise rate of the device is much higher than the contribution of environmental disturbances, causing the hotspot identification coefficient to increase significantly, thus identifying it as a true hotspot area. Conversely, when the hotspot identification coefficient is less than the threshold, it is considered that the temperature rise of the module is mainly caused by environmental changes or the temperature change range is within the normal range, and it is marked as a non-hotspot area. Through the above steps, the hotspot determination module can effectively identify the true heat-generating location within the equipment, eliminate environmental interference, and provide accurate temperature field positioning basis for subsequent temperature prediction and early protection.

[0084] Preferably, the temperature prediction and identification module is used to extract hotspot areas with parameter acquisition delays, obtain the corresponding first temperature sequence and third temperature sequence, input the first temperature sequence and third temperature sequence into the temperature prediction and identification strategy, output a temperature anomaly correlation factor, and trigger early protection based on the temperature correlation factor, specifically as follows:

[0085] The temperature correlation factor is compared with a preset correlation threshold range. If the temperature correlation factor is within the preset correlation threshold range, early protection is not triggered; otherwise, early protection is triggered. The formula for the temperature prediction and identification strategy is:

[0086] ;

[0087] In the formula: As a factor related to temperature anomalies, Let i be the first temperature distribution parameter at time i in the first temperature sequence. The mean value of the first temperature distribution parameter in the first temperature sequence. Let i be the second temperature distribution parameter in the third temperature sequence. This represents the mean value of the second temperature distribution parameter in the third temperature sequence.

[0088] It should be noted that the triggering of early protection is specifically manifested as follows: when there is a delay in parameter acquisition, that is, when the sensor temperature has not yet risen, but the temperature of the hot spot area has already risen, that is, the correlation factor has risen, thus triggering early protection.

[0089] In this embodiment of the invention, during the operation of a high-power pulse amplifier, a microstrip synthesizer in the final stage synthesis module may experience a rapid local temperature rise within a short period due to power superposition effects. However, due to delays in sensor acquisition and signal transmission, the temperature sensors in the pre-stage driver module or the final stage module may not have detected this temperature rise. The temperature prediction and identification module extracts hotspot regions with parameter acquisition delays and inputs the corresponding first and third temperature sequences into the temperature prediction and identification strategy to calculate a temperature anomaly correlation factor. When the calculated correlation factor exceeds a preset threshold, it is determined that the temperature in the hotspot region has abnormally increased. Even if the sensor has not yet reflected this, early protection measures will be triggered, such as reducing the power output of that channel, adjusting the power divider allocation, or activating a local cooling device, thereby effectively preventing the module from being damaged due to local overheating. This mechanism ensures that the amplifier can respond to potential temperature rise risks in advance, achieving safe and stable continuous operation even with parameter acquisition delays.

[0090] like Figure 4The diagram shown is a schematic diagram of the structure of a pulse radiator provided in an embodiment of the present invention. The pulse radiator includes a radiator, an output parameter monitoring module, and an output parameter fluctuation accurate analysis module. The radiator is connected to the output parameter monitoring module, and the output parameter monitoring module is connected to the output parameter fluctuation accurate analysis module.

[0091] The radiator is used to convert the output signal of the pulse power amplifier into radiation parameters;

[0092] The output parameter monitoring module is used to acquire the radiation parameters of the radiator;

[0093] The accurate analysis module for radiation parameter fluctuations is used to analyze and determine the dominant influencing factors based on the fluctuations in radiation parameters.

[0094] Preferably, the output parameter monitoring module is used to acquire the radiation parameters of the radiator, which include the following:

[0095] When there is a delay in parameter acquisition, the radiation parameters of the radiator are marked as the first radiation parameters;

[0096] When hotspot areas exist, the radiation parameters of the radiator are labeled as the second radiation parameter;

[0097] When both parameter acquisition delay and hotspot areas exist simultaneously, the radiation parameters of the radiator are marked as the third radiation parameter.

[0098] Preferably, the output parameter fluctuation accurate analysis module is used to analyze and determine the dominant influencing factors based on the fluctuation of radiation parameters. The specific steps are as follows:

[0099] The first radiation parameter within the monitoring period is arranged in time to form the first radiation sequence, the second radiation parameter is arranged in time to form the second radiation sequence, and the third radiation parameter is arranged in time to form the third radiation sequence.

[0100] By establishing a first-level joint matching model between the first radiation sequence and the second radiation sequence, the first operational correlation factor is output.

[0101] By establishing a two-level joint matching model between the second and third radiation sequences, the second operational correlation factor is output.

[0102] The dominant influencing factors are determined based on the first operational correlation factor and the second operational correlation factor.

[0103] In this embodiment of the invention, the high-power pulse signal output by the pulse power amplifier is converted into radiation parameters that can be detected by the pulse radiator. The pulse radiator converts the electrical signal output by the power amplifier into electromagnetic radiation waves, and the output parameter monitoring module collects its radiation characteristics in real time, including instantaneous power, amplitude fluctuations, and directionality.

[0104] During the monitoring process, when there is a sensor data acquisition delay in the output signal of the pulse power amplifier, the radiation parameter corresponding to the radiator is marked as the first radiation parameter; if a hot spot area appears in the power amplifier module, causing radiation abnormality, the radiation parameter is marked as the second radiation parameter; when both parameter acquisition delay and hot spot area exist simultaneously, it is marked as the third radiation parameter.

[0105] The output parameter fluctuation accurate analysis module arranges different types of radiation parameters according to time series to form the first, second, and third radiation sequences. It calculates the first operational correlation factor through a first-level joint matching model, and further establishes a second-level joint matching model with the second and third radiation sequences to output the second operational correlation factor. This module can comprehensively judge the dominant influencing factors of the pulse power amplifier on radiation fluctuations, and realize the accurate analysis of the impact of abnormal pulse power amplifier output characteristics on radiation performance. This provides a reliable basis for timely adjustment of power distribution, optimization of heat dissipation, and ensuring the stable operation of the radar system.

[0106] Preferably, a first-level joint matching model is established between the first radiation sequence and the second radiation sequence to output a first operational correlation factor. The formula for the first-level joint matching model is as follows:

[0107] ;

[0108] In the formula: As the first operational correlation factor, Let be the first radiation parameter at time i in the first radiation sequence. The mean value of the first radiation parameter in the first radiation sequence. Let be the second radiation parameter at time i in the second radiation sequence. This represents the mean value of the second radiation parameter in the second radiation sequence.

[0109] In a pulsed power amplifier and pulsed radiator system, the correlation between two types of radiation parameters can be quantitatively measured by establishing a first-order joint matching model between the first radiation sequence and the second radiation sequence and calculating the first operational correlation factor. Its purpose is twofold: firstly, it reveals the relationship between the power amplifier module's output delay and local hotspots on radiation fluctuations, identifying which fluctuations may originate from sensor acquisition delays; secondly, through this correlation analysis, potential abnormal operating states can be detected in advance, providing a reference for temperature control and radiation output optimization. Overall, it improves the system's sensitivity and controllability to radiation output fluctuations, enabling precise monitoring and preventative maintenance of the power amplifier module and radiator status, reducing operational risks, and ensuring the stable operation of the pulsed radiator.

[0110] Preferably, a second operational correlation factor is output by establishing a two-level joint matching model between the second and third radiation sequences. The formula for the two-level joint matching model is as follows:

[0111] ;

[0112] In the formula: As the second operational correlation factor, Let be the second radiation parameter at time i in the second radiation sequence. This represents the mean value of the second radiation parameter in the second radiation sequence. Let i be the third radiation parameter in the third radiation sequence at time i. This represents the mean value of the third radiation parameter in the third radiation sequence.

[0113] In pulsed power amplifier and pulsed radiator systems, by establishing a two-level joint matching model between the second and third radiation sequences and calculating the second operational correlation factor, the correlation between hotspot effects and delay superposition effects on radiation output can be quantified. Its purpose is to reveal the contribution of sensor acquisition delay to radiation fluctuations when hotspot regions occur, thereby identifying which radiation anomalies are caused by the superposition of these two factors. Through this analysis, the dominant influencing factors can be more accurately determined, providing a scientific basis for the temperature control strategy of pulsed power amplifiers and the radiation regulation of radiators, improving the stability and safety of equipment operation, and reducing the risks of misjudgment and overprotection.

[0114] Preferably, the dominant influencing factor is determined based on the first operational correlation factor and the second operational correlation factor, and the specific steps are as follows:

[0115] The first operational correlation factor and the second operational correlation factor are compared with preset correlation thresholds. If the first operational correlation factor is greater than or equal to the preset correlation threshold, while the second operational correlation factor is less than the preset correlation threshold, the dominant influencing factor is parameter acquisition delay. If the first operational correlation factor is less than the preset correlation threshold, while the second operational correlation factor is greater than or equal to the preset correlation threshold, the dominant influencing factor is hotspot area. If both the first and second operational correlation factors are greater than or equal to the preset correlation threshold, the dominant influencing factor is mixed, meaning that both parameter acquisition delay and hotspot area are dominant factors. If both the first and second operational correlation factors are less than the preset correlation threshold, the dominant influencing factors are excluded as parameter acquisition delay or hotspot area.

[0116] In this embodiment of the invention, when a pulse power amplifier and a pulse radiator are operating in conjunction, the analysis of output parameter fluctuations needs to determine whether they are caused by parameter acquisition delays in the power amplifier module or by local hot spots. The dominant influencing factor is determined by comparing the calculated first and second operational correlation factors with a preset correlation threshold.

[0117] Specifically, when the first operational correlation factor is above the threshold and the second operational correlation factor is below the threshold, it indicates that radiation fluctuations are mainly caused by the delay in acquiring the power amplifier module parameters. This means the sensor has not yet reflected the power amplifier output changes in real time, but the radiator has already shown fluctuations. When the first operational correlation factor is below the threshold and the second operational correlation factor is above the threshold, it indicates that radiation fluctuations are mainly caused by hot spots in the power amplifier module, meaning localized overheating affects radiation performance. When both are high, it indicates that output delay and hot spot effects work together, forming a mixed dominant factor, requiring simultaneous attention to the power amplifier module's temperature control and parameter acquisition speed. When both are low, the significant impact of parameter acquisition delay and hot spots on radiation fluctuations can be ruled out, indicating that system fluctuations may originate from other factors, such as external environmental disturbances or changes in the radiator's own characteristics. Through the above, the main cause of fluctuations can be accurately identified in a real operating environment, providing a basis for power amplifier module adjustment, heat dissipation optimization, and radiator performance assurance.

[0118] Through the above embodiments, this invention, using multi-layer temperature sensors and a hierarchical temperature delay monitoring module, can acquire the temperature distribution parameters of each stage of the power amplifier device in real time and determine whether there is a delay in the sensor readings, thereby accurately reflecting the actual heating state of the device. With the help of a hotspot identification module and a temperature prediction and recognition module, it can not only identify real hotspot areas but also predict potential overheating risks based on temperature trends, achieving early protection and reducing the probability of power transistor or synthesizer link damage. By analyzing the disturbances to temperature readings caused by changes in ambient temperature, fluctuations in the heat dissipation airflow, and heat accumulation in the chassis, it can distinguish between device self-heating and ambient temperature rise, improving the accuracy of hotspot identification and temperature control. A pulse radiator, in conjunction with an output parameter monitoring module and a fluctuation analysis module, establishes a correlation between temperature anomalies and radiation parameter fluctuations, identifying the dominant factors causing radiation fluctuations and ensuring the accuracy and stability of microwave radiation output. Through real-time monitoring and predictive protection of temperature anomalies and radiation output, protection actions can be triggered in advance to avoid equipment overheating or damage, improving the overall operational safety and reliability.

[0119] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application.

[0120] Finally: The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A pulse power amplifier, characterized in that, It includes a pre-stage driver module, a secondary driver module, a final stage synthesis module, forward and reverse couplers, and a multi-layer temperature monitoring module; The preamplifier module includes a power divider, detector, amplifier, and electrically adjustable attenuator; The secondary drive module includes an amplifier; The final stage synthesis module includes a 16-channel waveguide power divider, a 16-channel waveguide synthesizer, a 4-channel microstrip power divider, a 4-channel microstrip synthesizer, and an amplifier; The multi-layer temperature monitoring module is used to acquire temperature distribution parameters through temperature sensors, analyze the impact of delayed monitoring and environmental disturbances based on the temperature distribution parameters, and verify and determine the location of monitoring hotspots. The multi-layer temperature monitoring module includes several temperature sensors, a hierarchical temperature delay monitoring module, a hotspot identification module, and a temperature prediction and recognition module. Several temperature sensors are used to monitor and acquire the first temperature distribution parameters of the front-end drive module, the secondary drive module, the final synthesis module, and the forward and reverse couplers, and to acquire the second temperature distribution parameters of the working environment. The hierarchical temperature delay monitoring module is used to perform sensitivity analysis based on the first temperature distribution parameter to determine whether there is a delay in the acquisition of parameters from the corresponding temperature sensor. The hotspot identification module is used to analyze the impact of environmental disturbances using a first temperature distribution parameter and a second temperature distribution parameter, and to identify hotspot areas. The specific steps are as follows: Based on the second temperature distribution parameters, the third temperature sequence is obtained by sorting them according to time sequence. The disturbance influence factors of the ambient temperature are analyzed. A hotspot area identification model is constructed based on the first temperature sequence and the disturbance influence factors. The hotspot area identification coefficient is obtained. The hotspot area is identified based on the hotspot area identification coefficient. The hotspot area identification coefficient is compared with the preset identification threshold. If the hotspot area identification coefficient is greater than or equal to the preset identification threshold, the corresponding module is marked as a hotspot area; if the hotspot area identification coefficient is less than the preset identification threshold, the corresponding module is marked as a non-hotspot area. The temperature prediction and identification module is used to extract hotspot areas with parameter acquisition delays, obtain the corresponding first temperature sequence and third temperature sequence, input the first temperature sequence and third temperature sequence into the temperature prediction and identification strategy, output the temperature anomaly correlation factor, and trigger early protection based on the temperature correlation factor.

2. The pulse power amplifier according to claim 1, characterized in that, The hierarchical temperature delay monitoring module is used to perform sensitivity analysis based on the first temperature distribution parameter to determine whether there is a delay in the acquisition of parameters from the corresponding temperature sensor. The specific steps are as follows: The first temperature distribution parameter is extracted during the monitoring period and arranged in time sequence to obtain the first temperature sequence. The temperature distribution parameter under normal operating conditions is obtained as the third temperature distribution parameter and arranged in time sequence to obtain the second temperature sequence. The temperature sensitivity coefficient is calculated by comparing the first temperature sequence and the second temperature sequence, and the parameter acquisition of the corresponding temperature sensor is determined based on the temperature sensitivity coefficient. The temperature sensitivity coefficient is compared with a preset sensitivity threshold. If the temperature sensitivity coefficient is greater than or equal to the preset sensitivity threshold, there is a delay in the acquisition of the corresponding temperature sensor parameters; if the temperature sensitivity coefficient is less than the preset sensitivity threshold, there is no delay in the acquisition of the corresponding temperature sensor parameters.

3. The pulse power amplifier according to claim 1, characterized in that, The early protection is triggered based on the temperature correlation factor. Specifically, the temperature correlation factor is compared with a preset correlation threshold range. If the temperature correlation factor is within the preset correlation threshold range, the early protection is not triggered; otherwise, the early protection is triggered.

4. A pulse radiator, applied to a pulse power amplifier as described in any one of claims 1-3, characterized in that, This includes a radiator, an output parameter monitoring module, and an output parameter fluctuation accurate analysis module; The radiator is used to convert the output signal of the pulse power amplifier into radiation parameters; The output parameter monitoring module is used to acquire the radiation parameters of the radiator; The accurate analysis module for radiation parameter fluctuations is used to analyze and determine the dominant influencing factors based on the fluctuations in radiation parameters.

5. The pulse radiator according to claim 4, characterized in that, The output parameter monitoring module is used to acquire the radiation parameters of the radiator, which include the following: When there is a delay in parameter acquisition, the radiation parameters of the radiator are marked as the first radiation parameters; When hotspot areas exist, the radiation parameters of the radiator are labeled as the second radiation parameter; When both parameter acquisition delay and hotspot areas exist simultaneously, the radiation parameters of the radiator are marked as the third radiation parameter.

6. The pulse radiator according to claim 4, characterized in that, The output parameter fluctuation accurate analysis module is used to analyze and determine the dominant influencing factors based on the fluctuations in radiation parameters. The specific steps are as follows: The first radiation parameter within the monitoring period is arranged in time to form the first radiation sequence, the second radiation parameter is arranged in time to form the second radiation sequence, and the third radiation parameter is arranged in time to form the third radiation sequence. By establishing a first-level joint matching model between the first radiation sequence and the second radiation sequence, the first operational correlation factor is output. By establishing a two-level joint matching model between the second and third radiation sequences, the second operational correlation factor is output. The dominant influencing factors are determined based on the first operational correlation factor and the second operational correlation factor.

7. The pulse radiator according to claim 6, characterized in that, The dominant influencing factors are determined based on the first and second operational correlation factors. The specific steps are as follows: The first operational correlation factor and the second operational correlation factor are compared with preset correlation thresholds. If the first operational correlation factor is greater than or equal to the preset correlation threshold, while the second operational correlation factor is less than the preset correlation threshold, the dominant influencing factor is parameter acquisition delay. If the first operational correlation factor is less than the preset correlation threshold, while the second operational correlation factor is greater than or equal to the preset correlation threshold, the dominant influencing factor is hotspot area. If both the first and second operational correlation factors are greater than or equal to the preset correlation threshold, the dominant influencing factor is mixed, meaning that both parameter acquisition delay and hotspot area are dominant factors. If both the first and second operational correlation factors are less than the preset correlation threshold, the dominant influencing factors are excluded as parameter acquisition delay or hotspot area.

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