Magnetic sensor device and manufacturing method for magnetic sensor device

Abstract

The invention relates to a magnetic sensor device comprising a substrate (10) and at least one sensor structure (A) having: at least one sensing element (16a), which is arranged in a first sensing region (14a) directly or adjacently above a substrate surface (12), a magnetic field component present in the first sensing region (14a) along a sensing axis (18a) which is associated with the first sensing region (14a) and is oriented parallel to the substrate surface (12) can be detected by means of the sensing elements; and a first layer (20a) which comprises at least one soft magnetic material and which is located between the substrate (10) and a first sensing region (14a) located directly or adjacently above the substrate surface (12), or on a side of the first sensing region (14a) facing away from the substrate (10), a first outer surface (22a) of the first layer (20a) oriented towards the first sensing region (14a) having at least one partial surface (24a), each of the plurality of elements is oriented at a local inclination angle of 2 DEG or more and 70 DEG or less with respect to the substrate surface (12).

Description

Technical Field

[0001] This invention relates to a magnetic sensor device. This invention also relates to a method for manufacturing a magnetic sensor device. Background Technology

[0002] US Patent 11,209,503 B2 describes a magnetic sensor having at least one magnetoresistive sensing element and a shielding layer made of at least one soft magnetic material. The shielding layer is either disposed between the substrate surface of the substrate of the magnetic sensor and the at least one magnetoresistive sensing element, or disposed on the side of the at least one magnetoresistive sensing element away from the substrate. Summary of the Invention

[0003] The present invention provides a magnetic sensor device having the features of claim 1 and a method for manufacturing a magnetic sensor device having the features of claim 13.

[0004] Advantages of the invention This invention provides a magnetic sensor device in which, unlike the prior art, a layer comprising at least one soft magnetic material (hereinafter referred to as the first layer) can be used not only as a shielding element / shielding layer but also as a flux deflector / deflection element (flux guide). Thus, the functionality of the first layer of at least one sensor structure of the magnetic sensor device according to the invention is improved relative to the prior art. On one hand, the first layer shields the first sensing region of the sensor structure thus constructed from the influence of the magnetic field component of an external magnetic field oriented parallel to the substrate surface of the substrate of the magnetic sensor device. Furthermore, the first layer guides the magnetic field component of the external magnetic field, oriented perpendicular to the substrate surface, to the associated first sensing region along the sensing axis of at least one sensing element of the corresponding sensor structure. Therefore, the corresponding first layer of the magnetic sensor device according to the invention can also be referred to as a (first) shielding and flux deflection layer.

[0005] By utilizing the (first) shielding and flux deflection layer achieved through this invention, the necessity of equipping at least one sensor structure of the magnetic sensor device according to the invention with a conventional flux deflector is eliminated. Therefore, this invention promotes the miniaturization of the magnetic sensor device. The applicability of the magnetic sensor device can also be improved by the possibility of reducing its size and / or weight created by the invention. Furthermore, since the conventional flux deflector can be eliminated, this invention helps to reduce the cost of the magnetic sensor device.

[0006] In one embodiment of the magnetic sensor device, the first layer is configured such that it can shield a first sensing region from the influence of a magnetic field component oriented along a first spatial axis of an external magnetic field, and deflect the magnetic field component oriented along a vertical axis of the external magnetic field into the first sensing region along a first sensing axis, wherein the first spatial axis is oriented parallel to the substrate surface and the vertical axis is oriented perpendicular to the substrate surface, and wherein the first sensing axis is oriented along a second spatial axis, which is parallel to the substrate surface and perpendicular to the first spatial axis. In the embodiment of the magnetic sensor device described herein, the first layer thus advantageously realizes the functions of a shielding element / shielding layer according to the prior art and a conventional magnetic flux deflector. Therefore, in the embodiment described herein, the versatility of the first layer is improved compared to the prior art.

[0007] If the first layer is configured such that it can shield the first sensing region from the influence of the magnetic field component of the external magnetic field oriented along the first spatial axis, and can deflect the magnetic field component of the external magnetic field oriented along the vertical axis to the first sensing region along the first sensing axis, wherein the first spatial axis is oriented parallel to the substrate surface and the vertical axis is oriented perpendicular to the substrate surface, wherein the first sensing axis is oriented along the first spatial axis, then the multifunctionality of the first layer is also improved.

[0008] Similarly, the first layer can be configured such that it can shield the first sensing region from the influence of the magnetic field component of the external magnetic field oriented along the first spatial axis and the magnetic field component of the external magnetic field oriented along the second spatial axis, and can deflect the magnetic field component of the external magnetic field oriented along the vertical axis into the first sensing region along the first sensing axis, wherein the first and second spatial axes are oriented parallel to the substrate surface, the first spatial axis is oriented perpendicular to the second spatial axis, and the vertical axis is oriented perpendicular to the substrate surface.

[0009] Preferably, the at least one first sensor structure additionally has a second layer comprising the at least one soft magnetic material and / or at least one additional soft magnetic material, wherein if the first layer is located between the substrate and a first sensing region directly on or adjacent to the substrate surface, the second layer is located on the side of the first sensing region facing away from the substrate; or, if the first layer is located on the side of the first sensing region facing away from the substrate, the second layer is located between the substrate and the first sensing region directly on or adjacent to the substrate surface. Therefore, in addition to the first layer, the second layer can also be used at least as a shielding element / shielding layer to improve the shielding of the first sensing region.

[0010] As an advantageous extension, the second outer surface of the second layer, oriented toward the first sensing region, may have at least one partial facet, each of which is oriented with a local tilt angle of greater than or equal to 2° and less than or equal to 70° relative to the substrate surface. Therefore, in addition to its shielding function, the second layer can also be used as a flux deflector. Thus, the versatility of the second layer is also enhanced in the embodiments of the magnetic sensor device described herein.

[0011] For example, the first outer surface and / or the second outer surface may be at least partially shaped as corrugated and / or angled. As will be clear from the following description, this design of the first and / or second layers can be achieved by means of an easy-to-implement manufacturing method.

[0012] As a further advantageous extension, the magnetic sensor device may additionally be configured with at least one second sensor structure, the at least one second sensor structure comprising: at least one additional sensing element, the at least one additional sensing element being respectively arranged in a second sensing region directly on or adjacent to the substrate surface, and capable of detecting magnetic field components present in the second sensing region along respectively assigned second sensing axes oriented parallel to the substrate surface; and a third layer comprising the at least one soft magnetic material and / or at least one additional soft magnetic material, and the third layer being located between the substrate and the second sensing regions directly on or adjacent to the substrate surface, or on the side of the second sensing region away from the substrate, and the third layer having a third outer surface oriented toward the second sensing region, the third outer surface having at least one partial facet, the at least one partial facet being oriented with a local tilt angle greater than or equal to 2° and less than or equal to 70° relative to the substrate surface. Therefore, the embodiments of the magnetic sensor device described herein, in addition to the first sensor structure including at least a first sensing region and a first layer, also have a second sensor structure comprising at least a second sensing region and a third layer. By equipping the implementation of the magnetic sensor device described herein with (at least) two sensor structures, its measurement accuracy and reliability can be improved.

[0013] Advantageously, the first average distance from the at least one sensing element in the first sensing region to the first outer surface of the first layer may not be equal to the second average distance from the at least one sensing element in the second sensing region to the third outer surface of the third layer; and / or the first maximum local tilt angle of at least one inner portion of the first outer surface of the first layer relative to the substrate surface may not be equal to the second maximum local tilt angle of at least one inner portion of the third outer surface of the third layer relative to the substrate surface. In all cases described herein, the first sensor structure may be configured with a first sensitivity different from the second sensitivity of the second sensor structure. This can be used to extend the measurement range of a magnetic sensor device equipped with (at least) two sensor structures.

[0014] The above advantages can also be achieved in the following ways: the thickness of the first layer oriented perpendicular to the substrate surface is not equal to the thickness of the second layer oriented perpendicular to the substrate surface of the third layer; the first length of the first layer oriented along the first sensing axis is not equal to the second length of the third layer oriented along the second sensing axis; the first width of the first layer oriented perpendicular to both the substrate surface and the first sensing axis is not equal to the second width of the third layer oriented perpendicular to both the substrate surface and the second sensing axis; the first interlayer distance between the first and second layers is not equal to the second interlayer distance between the third layer and the fourth layer of the same second sensor structure, wherein the fourth layer includes the at least one soft magnetic material and / or at least one other soft magnetic material. And if the third layer is located between the substrate and the second sensing region located directly on or adjacent to the substrate surface, the fourth layer is located on the side of the second sensing region away from the substrate; or, if the third layer is located on the side of the second sensing region away from the substrate, the fourth layer is located between the substrate and the second sensing region located directly on or adjacent to the substrate surface; and / or the arrangement or distribution of the at least one sensing element in the first sensing region relative to the first volume center of the first sensing region is different from the arrangement or distribution of the at least one sensing element in the second sensing region relative to the second volume center of the second sensing region.

[0015] Advantageously, the first orientation of the first sensing axis can also be different from the second orientation of the second sensing axis. This allows for the creation of different directional sensitivities in the magnetic sensor device.

[0016] As an advantageous extension, the magnetic sensor device may have at least two first sensor structures and at least two second sensor structures, wherein a first spacing between two adjacent first sensor structures is not equal to a second spacing between two adjacent second sensor structures.

[0017] The aforementioned advantages are also achieved by implementing a corresponding manufacturing method for a magnetic sensor device. In an advantageous embodiment of the manufacturing method, a second layer is formed between a substrate and a first sensing region located directly on or adjacent to the substrate surface, wherein, prior to forming the first layer on the side of the first sensing region away from the substrate, a dielectric non-magnetic layer is formed on the side of the first sensing region away from the substrate, the dielectric non-magnetic layer being at least regionally configured with a corrugated shape and / or a truncated pyramidal shape. The first layer is then formed on the dielectric non-magnetic layer. This is easy to implement and achieves at least partially corrugated and / or angled outer surfaces of the first layer. Attached Figure Description

[0018] Other features and advantages of the invention will now be explained with reference to the accompanying drawings, which show: Figures 1a to 1h A schematic diagram of the first embodiment of the magnetic sensor device, together with a coordinate system and magnetic field line diagram used to explain its working principle. Figure 2 : A schematic diagram of the second embodiment of the magnetic sensor device; Figure 3 : A schematic diagram of the third embodiment of the magnetic sensor device; Figure 4 : A flowchart illustrating a first embodiment of a method for manufacturing a magnetic sensor device; Figures 5A to 5D: Cross-sections of intermediate products used to illustrate a second embodiment of the manufacturing method of a magnetic sensor device; and Figures 6A to 6D: Cross-sections of intermediate products used to illustrate the third embodiment of the manufacturing method of the magnetic sensor device. Detailed Implementation

[0019] Figures 1a to 1h A schematic diagram of a first embodiment of a magnetic sensor device is shown, along with a coordinate system and magnetic field line diagram used to illustrate its working principle.

[0020] Figure 1a and 1bThe magnetic sensor device schematically shown has a substrate 10 with a substrate surface 12. The substrate 10 may be, for example, a semiconductor substrate, particularly a silicon substrate. The magnetic sensor device also has at least one sensor structure A. The corresponding sensor structure A includes a sensing region 14a in which at least one sensing element 16a is arranged / constructed. The sensing region 14a is selectively located directly on or adjacent to the substrate surface 12 of the substrate 10. The at least one sensing element 16a arranged / constructed in the sensing region 14a is implemented such that magnetic field components present in the sensing region 14a and along a respective associated sensing axis 18a can be detected / inspected by means of the at least one sensing element 16a. Furthermore, the sensing axis 18a is oriented parallel to the substrate surface 12 of the substrate 10. Detecting the magnetic field components present in the sensing region 14a and oriented along the sensing axis 18a can be understood as confirming at least a minimum magnetic field strength and / or measuring the magnetic field strength / magnetic flux density of the corresponding magnetic field component.

[0021] At least one sensing element 16a in the sensing region 14a can be, for example, a Hall element and / or a magnetoresistive element, particularly a TMR (tunneling magnetoresistive), AMR (anisotropic magnetoresistive), and / or GMR (giant magnetoresistive) element. The detection of magnetic field components present in the sensing region 14a and oriented along the sensing axis 18a can be performed / performed by means of the at least one sensing element 16a, and therefore can be based on the operating principles of Hall, GMR, AMR, and / or TMR. However, it should be noted that the constructibility of the magnetic sensor device described herein is not limited to any particular sensing element type of its at least one sensing element 16a. Multiple sensing elements 16a can be placed in pairs such that they each measure the same magnetic field strength but in opposite field directions. Preferably, the multiple sensing elements 16a can be planarly located in a plane oriented parallel to the substrate surface 12 of the substrate 10. However, other arrangements may also be selectively employed for the at least one sensing element 16a arranged / constructed in the sensing region 14a. Multiple sensing elements 16a can be connected in particular to form a Wheatstone measuring bridge, wherein each bridge resistor can be composed of multiple sensing elements 16a connected in parallel and / or in series.

[0022] The magnetic sensor device also has a first layer 20a, which comprises at least one soft magnetic material. Preferably, the first layer 20a is formed entirely of said at least one soft magnetic material. For example, the first layer 20a may be formed at least partially (preferably entirely) of a nickel-iron alloy (NiFe). Preferably, the first layer 20a consists of 81% nickel and 19% iron.

[0023] exist Figures 1a to 1hIn one embodiment, the first layer 20a is located on the side of the sensing region 14a that is away from the substrate 10. Alternatively, the first layer 20a may also be disposed between the substrate 10 and the sensing region 14a located directly on or adjacent to the substrate surface 12. If the first layer 20a is located between the substrate 10 and the sensing region 14a, the first layer 20a may be selectively disposed between the substrate surface 12 and the sensing region 14a adjacent to the substrate surface 12, or disposed in a cut-out portion of the substrate 10 structured into the substrate surface 12.

[0024] Due to its advantageous arrangement relative to the sensing region 14a, the first layer 20a can serve as a shielding element / shielding layer for the sensing region 14a, and in particular, for the at least one sensing element 16a disposed within the sensing region 14a. Specifically, the first layer 20a can be configured such that it (primarily) shields / protects the sensing region 14a / its at least one sensing element 16a from the influence of the magnetic field component Bx_ext oriented along a first spatial axis x, wherein the first spatial axis x is oriented parallel to the substrate surface 12 of the substrate 10. This is readily achieved by giving the first layer 20a sufficient extension along a second spatial axis y, which is perpendicular to the first spatial axis x and parallel to the substrate surface 12.

[0025] As an example only, in Figure 1a and 1b In the first layer 20a shown, its longest axis extends along the second spatial axis y, such that the strongest shielding effect of the first layer 20a is achieved along the first spatial axis x. Therefore, the first spatial axis x can also be defined as the shielding axis of the first layer 20a. Alternatively, the first layer 20a can also have its longest axis along the first spatial axis x, such that the strongest shielding effect of the first layer 20a is achieved along the second spatial axis y. In this case, the second spatial axis y can also be defined as the shielding axis of the first layer 20a. Similarly, the first layer 20a can have the same extension dimension along the first spatial axis x and along the second spatial axis y, such that its shielding effect on the sensing region 14a / at least one of its sensing elements 16a is achieved to the same degree on the two spatial axes x and y, which are parallel to the orientation of the substrate surface 12. Preferably, the extension dimension of the first layer 20a on the spatial axes x and y, which are parallel to the orientation of the substrate surface 12, is greater than its maximum extension dimension along the third spatial axis z, which is perpendicular to the orientation of the substrate surface 12.

[0026] Figure 1aThe orientation of the sensing axis 18a, reproduced in the diagram, along the second spatial axis y and perpendicular to the first spatial axis x, should be interpreted as exemplary only. Alternatively, the sensing axis 18a may also extend parallel to the first spatial axis x and perpendicular to the second spatial axis y. Similarly, the sensing axis 18a may be tilted relative to the spatial axes x and y oriented parallel to the substrate surface 12.

[0027] like Figure 1a and 1b As can be seen, the first outer surface 22a of the first layer 20a oriented toward the sensing region 14a has at least one partial surface 24a, each of which is oriented with a local tilt angle of greater than or equal to 2° and less than or equal to 70° relative to the substrate surface 12. Therefore, the first outer surface 22a of the first layer 20a oriented toward the sensing region 14a should be understood as a "non-planar surface". Preferably, the corresponding local tilt angle of the at least one partial surface 24a, between 2° and 70°, lies in a cross-sectional plane that is perpendicular to the substrate surface 12 and extends along the sensing axis 18a. This can also be described as follows: each of the intersecting lines of a corresponding partial surface 24a in a cross-sectional plane perpendicular to the substrate surface 12 and extending along the sensing axis 18a is tilted with a local tilt angle between 2° and 70° relative to the intersecting line of the substrate surface 12 in that cross-sectional plane.

[0028] Therefore, the first layer 20a, which has a first outer surface 22a, not only functions as a shielding element / shielding layer but also as a flux deflector / deflection element (Flux Guide). Specifically, the first layer 20a can deflect / deflect the magnetic field component Bz_ext of the external magnetic field B_ext, oriented along the third spatial axis z, into the sensing region 14a and deflect / be deflected along the sensing axis 18a. Therefore, compared to the aforementioned prior art, the functionality of the first layer 20a is improved.

[0029] The first outer surface 22a of the first layer 20a can be at least partially planar shaped as corrugated and / or angled. Therefore, the intersection line of the first outer surface 22a in a cross-sectional plane perpendicular to the substrate surface 12 and extending along the sensing axis 18a can be at least partially a wavy line and / or a serrated line. Figure 1a and 1bIn the example, multiple partial surfaces 24a of the first outer surface 22a, each inclined at a local tilt angle greater than or equal to 2° and less than or equal to 70° relative to the substrate surface 12, are located as inner partial surfaces 24a between intermediate partial surfaces 26a of the first outer surface 22a that are oriented parallel to the substrate surface 12. Alternatively, however, the intermediate partial surfaces 26a may not be constructed on the first outer surface 22a. The back side 28a of the first layer 20a facing away from the sensing region 14a may optionally be planar or at least partially corrugated and / or angled.

[0030] As an advantageous extension, the magnetic sensor device of the embodiments described herein also has a second layer 30a, which comprises the at least one and / or at least one additional soft magnetic material. Preferably, the second layer 30a is formed (entirely) of the at least one soft magnetic material. In particular, the second layer 30a may be formed at least partially (preferably entirely) of a nickel-iron alloy (NiFe), specifically 81% nickel and 19% iron.

[0031] Because Figures 1a to 1h In the example, the first layer 20a is located on the side of the sensing region 14a away from the substrate 10, so the second layer 30a is located between the substrate 10 and the sensing region 14a located directly on or adjacent to the substrate surface 12. Specifically, the second layer 30a is located between the substrate surface 12 and the sensing region 14a adjacent to the substrate surface 12. Alternatively, the second layer 30a may also be arranged in a recess of the substrate 10 structured into the substrate surface 12. It should also be noted that... Figure 1a The arrangement of the second layer 30a in direct contact with the substrate 10, as shown in the figure, should be interpreted as exemplary only. Alternatively, at least one intermediate layer (not shown) may be formed between the substrate 10 and the second layer 30a.

[0032] If the first layer 20a is disposed between the substrate 10 and the sensing region 14a located directly on or adjacent to the substrate surface 12, wherein at least one intermediate layer may also be disposed between the substrate 10 and the first layer 20a, then the second layer 30a is located on the side of the sensing region 14a away from the substrate 10. Preferably, layers 20a and 30a are arranged such that they substantially coincide in cross-section along the third spatial axis z. The distance between layers 20a and 30a is preferably between 0.5 µm and 10 µm. The at least one material that at least surrounds the first layer 20a and may also surround the second layer 30a is preferably non-magnetic.

[0033] Whether the second layer 30a is located between the substrate 10 and the sensing region 14a or on the side of the sensing region 14a away from the substrate 10, the second layer 30a can also be used as a shielding element / shielding layer. This is achieved by... Figure 1c and 1d The magnetic field lines are reproduced graphically: Figure 1c The magnetic field diagram gives the local quotient Qx of the local magnetic flux density value of the local magnetic field B divided by the magnetic flux density value of the magnetic field component Bx_ext of the external magnetic field B_ext oriented along the first spatial axis x. Accordingly, Figure 1d The magnetic field diagram gives the local quotient Qz of the local magnetic flux density value of the local magnetic field B divided by the magnetic flux density value of the external magnetic field B_ext oriented along the third spatial axis z-direction. (This is achieved using...) Figure 1c As can be seen from the magnetic field diagram, with the help of layers 20a and 30a, the sensing region 14a is successfully shielded from the influence of the magnetic field component Bx_ext oriented along the first spatial axis x of the external magnetic field B_ext, resulting in a local quotient Qx (exemplarily) of less than 0.1% within the sensing region 14a. Figure 1d The magnetic field diagram also shows that the local quotient Qz (exemplarily) within the sensing region 14a is approximately 1.5. Therefore, with the help of layers 20a and 30a, there is no or almost no attenuation of the magnetic field component Bz_ext oriented on the third spatial axis z of the external magnetic field B_ext within the sensing region 14a.

[0034] Figure 1e A coordinate system is shown, with the horizontal axis representing the magnetic flux density value Bx_ext (in millitalas mT) of the magnetic field component Bx_ext oriented along the spatial x-axis of the external magnetic field B_ext, and the vertical axis representing the maximum local quotient Qx (in percentage %) within the sensing area 14a. (Using...) Figure 1e The coordinate system thus shows the magnetic flux density values ​​of the magnetic field components Bx_ext along the spatial x-axis, which depend on the external magnetic field B_ext, and the shielding capability / shielding effect of Bx_ext in layers 20a and 30a. (As can be seen with the help of...) Figure 1e As can be seen in the coordinate system, the magnetic flux density Bx_ext of the magnetic field component Bx_ext oriented along the spatial x-axis of the external magnetic field B_ext is ensured to reach (exemplarily) approximately 325 mT, ensuring reliable shielding capability / shielding effect of layers 20a and 30a on the sensing region 14a. Therefore, the shielding capability / shielding effect of layers 20a and 30a can be advantageously utilized until their soft magnetic material becomes "magnetically saturated." (As long as layers 20a and 30a are not "magnetically saturated," they possess permeability several orders of magnitude higher than their non-magnetic environment.) With the help of Figures 1f to 1hThe magnetic field diagram illustrates the advantageous applicability of the first outer surface 22a of the first layer 20a as a flux deflector. Figure 1f The magnetic field line diagram shows the local quotient Ky of the local magnetic flux density value of the local magnetic field B, oriented along the second spatial axis y / sensing axis 18a, divided by the local quotient Ky of the magnetic flux density value of the external magnetic field B_ext, oriented along the third spatial axis z. This quotient Ky can also be referred to as the conversion factor Ky, which reflects how much of the external magnetic field B_ext, oriented along the third spatial axis z, is deflected / deflected into the second spatial axis y / sensing axis 18a. For comparison, in Figure 1g The magnetic field diagram shows the local magnetic flux density value of the local magnetic field B, which is oriented along the third spatial axis z, divided by the local quotient Kz of the magnetic flux density value of the external magnetic field B_ext, which is oriented along the third spatial axis z. Figure 1h yes Figure 1f The enlarged portion of the diagram is shown.

[0035] Such as using Figures 1f to 1h It is evident that at least one portion of the surface 24a of the first outer surface 22a of the first layer 20a (due to its local tilt angle relative to the substrate surface 12 of greater than or equal to 2° and less than or equal to 70°) can be well used to deflect the magnetic field component Bz_ext of the external magnetic field B_ext oriented along the third spatial axis z into the second spatial axis y / sensing axis 18a. (This is feasible because the permeability decreases by several orders of magnitude when transitioning from the first layer 20a to at least one surrounding nonmagnetic material, thus the local magnetic field in the nonmagnetic material is almost perpendicular to the orientation of the first outer surface 22a.) A typical external magnetic field B_ext to be measured has a magnetic flux density of ±20 mT (millitalas) to ±100 mT (millitalas). (However, the measurement range of magnetoresistive sensing elements is typically only a few millitalas.) Therefore, a suitable value for the conversion factor Ky is less than 1, typically between 0.05 and 0.25. This can be easily achieved with the design of the first outer surface 22a of the first layer 20a. Even a conversion factor Ky of (almost) 0 is possible, wherein the sensing element 16a is preferably centrally positioned in the corresponding region between the two partial surfaces 24a.

[0036] At least the flux deflection function of the first layer 20a is reliably scalable by determining the shape of the first outer surface 22a, i.e., the corresponding local tilt angle. The distance of the sensing element 16a from the first outer surface 22a of the first layer 20a along the third spatial axis z can also be easily determined such that the conversion factor Ky has a preferred value at the location of the sensing element 16a. Similarly, the position of the sensing element 16a along the second spatial axis y can also be easily determined such that the conversion factor Ky corresponds to a preferred value at the location of the sensing element 16a.

[0037] As an optional extension, the second outer surface 32a of the second layer 30a oriented toward the sensing region 16a may also have at least one (not shown) partial surface, each of which is oriented with a local tilt angle of greater than or equal to 2° and less than or equal to 70° relative to the substrate surface 12. Therefore, the second outer surface 32a of the second layer 30a may also be at least partially shaped as corrugated and / or angled.

[0038] At least one portion of the first outer surface 22a of the first layer 20a and / or at least one portion of the second outer surface 32a of the second layer 30a may be oriented, in particular, at a local tilt angle of greater than or equal to 2° and less than or equal to 60° relative to the substrate surface 12, for example, at a local tilt angle of greater than or equal to 3° and less than or equal to 60°, especially at a local tilt angle of greater than or equal to 3° and less than or equal to 50°, and at a local tilt angle of greater than or equal to 5° and less than or equal to 50°.

[0039] Figure 2 A schematic diagram of a second embodiment of the magnetic sensor device is shown.

[0040] Figure 2In addition to a substrate 10 and a first sensor structure A with components 14a to 32a, the magnetic sensor device also has at least one second sensor structure B. Each of the at least one second sensor structure B is configured with at least one additional (not shown) sensing element, which is respectively arranged in a second sensing region 14b located directly on or adjacent to the substrate surface 12. With the aid of the at least one additional sensing element, it is also possible to detect magnetic field components present in the second sensing region 14b along sensing axes 18b respectively assigned to and oriented parallel to the substrate surface 12. Furthermore, each of the at least one second sensor structure B also has at least one third layer 20b, which includes the at least one and / or at least one additional soft magnetic material. The third layer 20b is located between the substrate 10 and the second sensing region 14b located directly on or adjacent to the substrate surface 12, or on the side of the second sensing region 14b away from the substrate 10. Furthermore, the third layer 20b has a third outer surface 22b oriented toward the second sensing region 14b, which has at least one partial surface (not shown) oriented with a local tilt angle of greater than or equal to 2° and less than or equal to 70° relative to the substrate surface 12. By equipping the magnetic sensor device described herein with the at least two sensor structures A and B, its measurement accuracy and reliability can be improved. Figure 2 As illustrated in the diagram, for all the aforementioned components 14a to 32a of the at least one first sensor structure, the corresponding components, particularly the fourth layer 30b corresponding to the second layer 30a, can be constructed on / in the at least one second sensor structure B.

[0041] Optionally, the first average distance from the at least one sensing element 16a in the first sensing region 14a to the first outer surface 22a of the first layer 20a may not be equal to the second average distance from the at least one sensing element in the second sensing region 14b to the third outer surface 22b of the third layer 20b. Alternatively or additionally, the first maximum local tilt angle of the at least one inner portion surface 24a of the first outer surface 22a of the first layer 20a relative to the substrate surface 12 may also not be equal to the second maximum local tilt angle of the at least one inner portion surface of the third outer surface 22b of the third layer 20b relative to the substrate surface 12. The at least two sensor structures A and B can therefore have different sensitivities / response sensitivities, thereby covering a relatively wide measurement range by optimizing the sensitivity of at least one of the at least two sensor structures A and B for specific portions of the measurement range, respectively.

[0042] about Figure 2 Other characteristics, features, and advantages of the magnetic sensor device are described above with reference to the embodiment shown in FIG1.

[0043] Figure 3 A schematic diagram of a third embodiment of the magnetic sensor device is shown.

[0044] Such as using Figure 3 It is evident that the orientation of the corresponding first sensing axis 18a of the at least one first sensor structure A may also differ from the orientation of the corresponding second sensing axis 18b of the at least one second sensor structure B. Alternatively or additionally, if the magnetic sensor device has at least two first sensor structures A and at least two second sensor structures B, the first spacing ΔA between two adjacent first sensor structures A may not be equal to the second spacing ΔB between two adjacent second sensor structures B.

[0045] The at least two sensor structures A and B can also be configured with different sensitivities / response sensitivities, in such a way that the thickness of the first layer 20a oriented perpendicular to the substrate surface 12 is not equal to the thickness of the second layer 20b oriented perpendicular to the substrate surface 12. Other possibilities include: the first length of the first layer 20a oriented along the first sensing axis 18a is not equal to the second length of the third layer 20b oriented along the second sensing axis 18b, and / or the first width of the first layer 20a oriented perpendicular to both the substrate surface 12 and the first sensing axis 18a is not equal to the second width of the third layer oriented perpendicular to both the substrate surface 12 and the second sensing axis 18b. If the at least two sensor structures A and B also have a second layer 30a or a fourth layer 30b respectively, it can also be determined that the first interlayer distance from the first layer 20a to the second layer 30a of the same first sensor structure A is not equal to the second interlayer distance from the third layer 20b to the fourth layer 30b of the same second sensor structure B. Furthermore, the arrangement or distribution of the at least one sensing element 16a in the first sensing region 14a of the at least one first sensor structure A relative to the first volume center of the first sensing region 14a of the same first sensor structure A may differ from the arrangement or distribution of the at least one sensing element in the second sensing region 14b of the at least one second sensor structure B relative to the second volume center of the second sensing region 14b of the same second sensor structure B. All possibilities mentioned herein for constructing the at least two sensor structures A and B with different sensitivities / response sensitivities are readily achievable.

[0046] about Figure 3 Other characteristics, features, and advantages of the magnetic sensor device are described above with reference to the embodiments of Figures 1 and 2.

[0047] In the above embodiment, layers 20a, 20b, 30a, and 30b are reproduced as cuboids. However, alternatively, layers 20a, 20b, 30a, and 30b may also have rounded corners and / or sloping flanks. The typical lengths of layers 20a, 20b, 30a, and 30b are between 5 µm and 100 µm on the first spatial axis x, between 25 µm and 600 µm on the second spatial axis y, and between 2 µm and 20 µm on the third spatial axis z.

[0048] Figure 4 A flowchart illustrating a first embodiment of a method for manufacturing a magnetic sensor device is shown.

[0049] At least one sensor structure is formed using the method steps described below. Multiple sensor structures can also be manufactured in this manner if desired.

[0050] In method step S1 of the manufacturing method, at least one sensing element is respectively arranged in a sensing region of the at least one sensor structure located directly on the substrate surface or adjacent to the substrate surface, such that magnetic field components present in the sensing region along respective assigned sensing axes oriented parallel to the substrate surface can be detected by means of the at least one sensing element. Furthermore, in method step S2 of the manufacturing method, at least one first layer comprising at least one soft magnetic material of the at least one sensor structure is formed between the substrate and the sensing region located directly on the substrate surface or adjacent to the substrate surface, or on the side of the sensing region away from the substrate. Method step S2 also includes a sub-step S2a, in which a first outer surface of the first layer oriented toward the sensing region is constructed, the first outer surface having at least one partial surface oriented with a local tilt angle of greater than or equal to 2° and less than or equal to 70° relative to the substrate surface. Thus, the magnetic sensor device produced by the manufacturing method described herein has a first layer in which the functions of magnetic flux deflection and shielding are at least jointly integrated into the first layer 20a.

[0051] Optionally, the manufacturing method may further include method step S3, in which a second layer comprising at least one and / or at least one additional soft magnetic material is additionally formed. If the first layer is located between the substrate and a first sensing region directly on or adjacent to the substrate surface, the second layer is formed on the side of the first sensing region facing away from the substrate. However, if the first layer is located on the side of the first sensing region facing away from the substrate, the second layer is formed between the substrate and the first sensing region directly on or adjacent to the substrate surface.

[0052] Regarding the advantageous order of performing steps S1 to S3, refer to the following description.

[0053] Figures 5A to 5D show cross-sections of intermediate products used to illustrate a second embodiment of the manufacturing method of a magnetic sensor device.

[0054] In the method described herein, a second layer 30a is first formed between the substrate surface 12 and a subsequent sensing region 14a located adjacent to and above the substrate surface 12. Preferably, the second layer 30a is formed of a nickel-iron alloy. Since alloys composed of nickel and iron are difficult to etch, a selective electroplating process (selective plating) can be performed to deposit the nickel-iron alloy. (This selective electroplating process for forming the first layer 20a is illustrated in more detail with reference to Figure 5C.) After the second layer 30a is formed, it is completely covered by a dielectric nonmagnetic layer 40. The dielectric nonmagnetic layer 40 can be, for example, a silicon dioxide layer. The at least one sensing element 16a is then formed. Contacts may also be fabricated before and after the fabrication of the at least one sensing element 16a, but this is not illustrated in Figure 5A. The at least one sensing element 16a is then covered with another dielectric nonmagnetic layer 42. The dielectric nonmagnetic layer 42 can also be, for example, a silicon dioxide layer. Optionally, planarization, such as chemical mechanical polishing (CMP), may be performed after depositing the dielectric nonmagnetic layer 42. An etch stop layer 44 is then deposited.

[0055] In an embodiment of the manufacturing method described herein, before forming the first layer 20a on the side of the sensing region 14a away from the substrate 10, a dielectric nonmagnetic layer 46a is formed on the side of the sensing region 14a away from the substrate 10, wherein the dielectric nonmagnetic layer 46a is at least regionally constructed with a corrugated shape and / or a truncated pyramidal shape. For this purpose, a raw material 46 of the (later) dielectric nonmagnetic layer 46a, such as silicon dioxide, is deposited on an etch stop layer 44. In the embodiment described herein, the dielectric nonmagnetic layer 46a is at least regionally constructed with a truncated pyramidal shape. This occurs using an etch mask 48, which, for the etching step performed to structure the dielectric nonmagnetic layer 46a, differs from the raw material 46 of the (later) dielectric nonmagnetic layer 46a and has a significantly higher etch rate. Figure 5A shows an intermediate product after the construction of the etch mask 48 but before the execution of the etching step. The structuring of the etch mask 48 can be performed, for example, by means of a photolithography process. In particular, the etching mask 48 can be composed of cuboid regions that determine the position of the subsequent truncated pyramid shape.

[0056] Subsequently, etching of the raw material 46 is performed using etching mask 48. The etching mask 48 is then removed. This intermediate product is shown in Figure 5B.

[0057] The first layer 20a is formed on the dielectric nonmagnetic layer 46a. Advantageously, the first layer 20a is formed of a nickel-iron alloy. A selective electroplating process is performed for this purpose. First, a conductive seed layer 50 (or conductive seed-layer) is deposited onto the intermediate product of FIG. 5B. Subsequently, a non-conductive capping layer 52 is deposited onto the conductive seed layer 50 and structured in a subsequent photolithography step such that the seed layer 50 is exposed only in the desired areas for the growth of the first layer 20a. The non-conductive capping layer 52 can be made, for example, of silicon dioxide. Then, on the exposed areas of the seed layer 50, the nickel-iron alloy can be selectively grown by means of an electroplating process. FIG. 5C shows the intermediate product after the selective electroplating deposition of the nickel-iron alloy.

[0058] The exposed areas of the non-conductive capping layer 52 and seed layer 50 can now be removed. If the capping layer 52 is made of a sufficiently stable and non-magnetic material (e.g., silicon dioxide), its removal can be omitted. Subsequently, the first layer 20a can be covered with a dielectric, non-magnetic layer 54 (e.g., a silicon dioxide layer). Advantageously, the material surrounding layers 20a and 30a is chosen to be non-magnetic. The final product obtained in this way is shown in Figure 5D.

[0059] Figures 6A to 6D show cross-sections of intermediate products used to illustrate a third embodiment of the manufacturing method of a magnetic sensor device.

[0060] In the manufacturing method described herein, unlike the previously explained implementation, the etched mask 48 is constructed with a "hill-like structure." This can be achieved, for example, by photolithography, particularly by grayscale lithography or by reflow lithography. In the case of grayscale lithography, the hillsides can also be implemented as straight. This intermediate product is shown in Figure 6A.

[0061] As can be seen with reference to Figure 6B, the "hill-like structure" can be transferred into the dielectric nonmagnetic layer 46a by subsequent etching. The etch rate ratio between the etch mask 48 and the raw material 46 of the dielectric nonmagnetic layer 46a determines the post-transfer geometry. Optionally, directional, tilted ion beam etching can be performed to make the resulting flank configuration straighter.

[0062] After removing the etch mask 48, a conductive seed layer 50 is redeposited. A non-conductive capping layer 52 (e.g., photoresist) can then be deposited using photolithography and structured as desired. Selective electroplating deposition can then be performed again to form the first layer 20a. This is illustrated in Figure 6C.

[0063] Next, the exposed areas of the non-conductive capping layer 52 and the seed layer 50 can be removed. Finally, the first layer 20a can be covered with a dielectric non-magnetic layer 54. The final product achieved in this way is shown in Figure 6D.

Claims

1. A magnetic sensor device, comprising: A substrate (10) having a substrate surface (12); and At least one first sensor structure (A), said at least one first sensor structure having: - At least one sensing element (16a) is arranged in a first sensing region (14a) located directly on or adjacent to the substrate surface (12) and above the substrate surface, and by means of the at least one sensing element, magnetic field components present in the first sensing region (14a) along a first sensing axis (18a) respectively assigned and parallel to the substrate surface (12) are respectively detected. and - A first layer (20a), comprising at least one soft magnetic material, and the first layer is located between the substrate (10) and the first sensing region (14a) located directly on or adjacent to the surface of the substrate (12) above the surface of the substrate, or on the side of the first sensing region (14a) away from the substrate (10). Its features are, The first outer surface (22a) of the first layer (20a) oriented toward the first sensing region (14a) has at least one partial surface (24a), which is oriented with a local tilt angle of greater than or equal to 2° and less than or equal to 70° relative to the substrate surface (12).

2. The magnetic sensor device according to claim 1, wherein, The first layer (20a) is configured such that the first sensing region (14a) can be shielded from the influence of the magnetic field component (Bx_ext) of the external magnetic field (B_ext) oriented along the first spatial axis (x), and the magnetic field component (Bz_ext) of the external magnetic field (B_ext) oriented along the vertical axis (z) can be deflected along the first sensing axis (18a) into the first sensing region (14a), wherein the first spatial axis (x) is oriented parallel to the substrate surface (12) and the vertical axis (z) is oriented perpendicular to the substrate surface (12), wherein the first sensing axis (18a) is oriented along the second spatial axis (y), the second spatial axis being parallel to the substrate surface (12) and perpendicular to the first spatial axis (x).

3. The magnetic sensor device according to claim 1, wherein, The first layer (20a) is configured such that the first sensing region (14a) can be shielded from the influence of the magnetic field component (Bx_ext) of the external magnetic field (B_ext) oriented along the first spatial axis (x), and the first layer (20a) can deflect the magnetic field component (Bz_ext) of the external magnetic field (B_ext) oriented along the vertical axis (z) into the first sensing region (14a) along the first sensing axis (18a), wherein the first spatial axis (x) is oriented parallel to the substrate surface (12), and the vertical axis (z) is oriented perpendicular to the substrate surface (12), wherein the first sensing axis (18a) is oriented along the first spatial axis (x).

4. The magnetic sensor device according to claim 1, wherein, The first layer (20a) is configured such that the first sensing region (14a) can be shielded from the influence of the magnetic field component (Bx_ext) oriented along the first spatial axis (x) and the magnetic field component (By_ext) oriented along the second spatial axis (y) of the external magnetic field (B_ext), and the first layer (20a) can deflect the magnetic field component (Bz_ext) oriented along the vertical axis (z) of the external magnetic field (B_ext) into the first sensing region (14a) along the first sensing axis (18a), wherein the first spatial axis (x) and the second spatial axis (y) are oriented parallel to the substrate surface (12), the first spatial axis (x) is oriented perpendicular to the second spatial axis (y), and the vertical axis (z) is oriented perpendicular to the substrate surface (12).

5. The magnetic sensor device according to any one of the preceding claims, wherein, The at least one first sensor structure (A) additionally has a second layer (30a) comprising the at least one soft magnetic material and / or at least one additional soft magnetic material, wherein if the first layer (20a) is located between the substrate (10) and the first sensing region (14a) located directly on or adjacent to the substrate surface (12) above the substrate surface, the second layer (30a) is located on the side of the first sensing region (14a) away from the substrate (10); or, if the first layer (20a) is located on the side of the first sensing region (14a) away from the substrate (10), the second layer (30a) is located between the substrate (10) and the first sensing region (14a) located directly on or adjacent to the substrate surface (12) above the substrate surface.

6. The magnetic sensor device according to claim 5, wherein, The second outer surface (32a) of the second layer (30a) oriented toward the first sensing region (14a) has at least one partial surface, the at least one partial surface being oriented with a local tilt angle of greater than or equal to 2° and less than or equal to 70° relative to the substrate surface (12).

7. The magnetic sensor device according to any one of the preceding claims, wherein, The first outer surface (22a) and / or the second outer surface (32a) are at least partially shaped as corrugated and / or angled.

8. The magnetic sensor device according to any one of the preceding claims, further comprising: At least one second sensor structure (B), said at least one second sensor structure having: - At least one additional sensing element, which is respectively arranged in a second sensing region (14b) located directly on or adjacent to the substrate surface (12) and above the substrate surface, and by means of the at least one additional sensing element, magnetic field components present in the second sensing region (14b) along a second sensing axis (18b) respectively assigned and parallel to the substrate surface (12) can be detected. and - A third layer (20b), comprising the at least one soft magnetic material and / or at least one additional soft magnetic material, and the third layer being located between the substrate (10) and the second sensing region (14b) located directly on or adjacent to the substrate surface (12) above the substrate surface, or on the side of the second sensing region (14b) away from the substrate (10), and the third layer having a third outer surface (22b) oriented toward the second sensing region (14b), the third outer surface having at least one partial facet, the at least one partial facet being oriented with a local tilt angle of greater than or equal to 2° and less than or equal to 70° relative to the substrate surface (12).

9. The magnetic sensor device according to claim 8, wherein: - The first average distance from at least one sensing element (16a) in the first sensing region (14a) to the first outer surface (22a) of the first layer (20a) is not equal to the second average distance from at least one sensing element in the second sensing region (14b) to the third outer surface (22b) of the third layer (20b); and / or - The first maximum local tilt angle of at least one inner portion surface (24a) of the first outer surface (22a) of the first layer (20a) relative to the substrate surface (12) is not equal to the second maximum local tilt angle of at least one inner portion surface of the third outer surface (22b) of the third layer (20b) relative to the substrate surface (12).

10. The magnetic sensor device according to claim 8 or 9, wherein: - The thickness of the first layer (20a) oriented perpendicular to the substrate surface (12) is not equal to the thickness of the second layer (20b) oriented perpendicular to the substrate surface (12); - The first length of the first layer (20a) oriented along the first sensing axis (18a) is not equal to the second length of the third layer (20b) oriented along the second sensing axis (18b); - The first width of the first layer (20a) oriented perpendicular to the substrate surface (12) and perpendicular to the first sensing axis (18a) is not equal to the second width of the third layer (20b) oriented perpendicular to the substrate surface (12) and perpendicular to the second sensing axis (18b); - The first interlayer distance from the first layer (20a) to the second layer (30a) is not equal to the second interlayer distance from the third layer (20b) to the fourth layer (30b) of the same second sensor structure (B), the fourth layer comprising the at least one soft magnetic material and / or at least one additional soft magnetic material, and if the third layer (20b) is located between the substrate (10) and the second sensing area (14b) located directly on or adjacent to the substrate surface (12), the fourth layer is located on the side of the second sensing area (14b) away from the substrate (10); or, if the third layer (20b) is located on the side of the second sensing area (14b) away from the substrate (10), the fourth layer is located between the substrate (10) and the second sensing area (14b) located directly on or adjacent to the substrate surface (12); and / or - The arrangement or distribution of at least one sensing element (16a) in the first sensing region (14a) relative to the first volume center of the first sensing region (14a) is different from the arrangement or distribution of at least one sensing element in the second sensing region (14b) relative to the second volume center of the second sensing region (14b).

11. The magnetic sensor device according to any one of claims 8 to 10, wherein, The first orientation of the first sensing axis (18a) is different from the second orientation of the second sensing axis (18b).

12. The magnetic sensor device according to any one of claims 8 to 11, wherein, The magnetic sensor device has at least two first sensor structures (A) and at least two second sensor structures (B), wherein the first distance (ΔA) between two adjacent first sensor structures (A) is not equal to the second distance (ΔB) between two adjacent second sensor structures (B).

13. A method for manufacturing a magnetic sensor device, comprising the following steps: At least one sensing element (16a) is respectively arranged on the substrate surface (12) of the substrate (10) of at least one sensor structure (A) or in a sensing region (14a) adjacent to and above the substrate surface of the substrate, such that the at least one sensing element (16a) can respectively detect magnetic field components (S1) existing in the first sensing region (14a) along sensing axes (18a) respectively assigned and parallel to the substrate surface (12); and A first layer (20a) of the at least one sensor structure (A) is formed between the substrate (10) and the sensing area (14a) located directly on or adjacent to the surface of the substrate (12) above the surface of the substrate, or on the side of the sensing area (14a) away from the substrate (10), the first layer comprising at least one soft magnetic material (S2). Its characteristics include the following steps: The first outer surface (22a) of the first layer (20a) is oriented toward the sensing region (14a), the first outer surface having at least one partial surface (24a), the at least one partial surface being oriented with a local tilt angle (S2a) of greater than or equal to 2° and less than or equal to 70° relative to the substrate surface (12).

14. The manufacturing method according to claim 13, wherein, A second layer (30a) is additionally formed of the at least one sensor structure (A), the second layer comprising the at least one soft magnetic material and / or at least one additional soft magnetic material, wherein if the first layer (20a) is located between the substrate (10) and the first sensing region (14a) located directly on or adjacent to the surface of the substrate (12), the second layer is formed on the side of the first sensing region (14a) away from the substrate (10), or if the first layer (20a) is located on the side of the first sensing region (14a) away from the substrate (10), the second layer is formed between the substrate (10) and the first sensing region (14a) located directly on or adjacent to the surface of the substrate (12) (S3).

15. The manufacturing method according to claim 14, wherein, The second layer (30a) is formed between the substrate (10) and the first sensing region (14a) located directly on or adjacent to the surface of the substrate (12). Before forming the first layer (20a) on the side of the first sensing region (14a) away from the substrate (10), a dielectric nonmagnetic layer (46a) is formed on the side of the first sensing region (14a) away from the substrate (10). The dielectric nonmagnetic layer is at least regionally constructed with a corrugated shape and / or a truncated pyramidal shape, wherein the first layer (20a) is formed on the dielectric nonmagnetic layer (46a).

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