Light-emitting device and light-emitting module

Abstract

The present invention realizes a small-sized light-emitting device that emits light having different polarization directions. The light-emitting device is provided with: a plurality of semiconductor laser elements each having an emission peak wavelength within a first wavelength + / -20 nm; a plurality of reflecting members including a first reflecting member having a first light reflecting surface and a second reflecting member having a second light reflecting surface and a wavelength plate provided on the second light reflecting surface, and a plurality of semiconductor laser elements including a first semiconductor laser element and a second semiconductor laser element, light emitted from the first semiconductor laser element is reflected by a first light reflecting surface of the first reflecting member, light emitted from the second semiconductor laser element is reflected by a second light reflecting surface of the second reflecting member, and the polarization direction of the light incident on the first light reflecting surface is the same as the polarization direction of the light incident on the second light reflecting surface. The polarization direction of the light emitted from the first reflecting member is different from the polarization direction of the light emitted from the second reflecting member.

Description

Technical Field

[0001] This invention relates to light-emitting devices and light-emitting modules. Background Technology

[0002] WO2020 / 66868 discloses a laser source device comprising multiple semiconductor laser elements, a polarization rotation element, multiple lenses, a spacer supporting the polarization rotation element and the multiple lenses, and a base on which the multiple semiconductor laser elements are disposed and the spacer is fixed. Multiple stepped portions for supporting the polarization rotation element are provided on the spacer. By supporting the polarization rotation element through the desired stepped portions, the polarization of light emitted from the desired semiconductor laser element can be rotated.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: WO2020 / 66868 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] Regardless of whether polarization rotation elements are used, publicly available laser source devices all have multiple stepped sections placed in the spacers, thus making the devices larger.

[0008] An invention has been disclosed that solves the technical problem of realizing the emission of light with different polarization directions in a small light-emitting device or light-emitting module.

[0009] Alternatively, instead of addressing the aforementioned technical problem, an invention has been disclosed that solves the technical problem of generating small light-emitting devices or light-emitting modules that emit light with consistent polarization directions.

[0010] Alternatively, instead of the aforementioned technical problems, an invention may be disclosed that solves the technical problem of a light-emitting device or light-emitting module that efficiently emits the desired light.

[0011] Alternatively, in place of the aforementioned technical problems, an invention may be disclosed that solves the technical problem of achieving efficient production of light-emitting devices or light-emitting modules.

[0012] In addition, this specification also discloses an invention that solves multiple technical problems in combination with the above-mentioned technical problems.

[0013] Technical solutions for solving technical problems

[0014] The light-emitting device disclosed in the embodiments includes: a package; a plurality of semiconductor laser elements disposed within the internal space of the package, all having emission peak wavelengths within a first wavelength ±20 nm; and a plurality of reflective components having one or more first reflective components and one or more second reflective components disposed within the internal space of the package. The first reflective components have a first light-reflecting surface, and the second reflective components have a second light-reflecting surface and a wavelength plate disposed on the second light-reflecting surface. The plurality of semiconductor laser elements includes one or more first semiconductor laser elements and one or more second semiconductor laser elements. Light emitted from the one or more first semiconductor laser elements is reflected by the first light-reflecting surface of the one or more first reflective components, and light emitted from the one or more second semiconductor laser elements is reflected by the second light-reflecting surface of the one or more second reflective components. Light incident on the first light-reflecting surface and light incident on the second light-reflecting surface have the same polarization direction, while light emitted from the first reflective component and light emitted from the second reflective component have different polarization directions.

[0015] Furthermore, the light-emitting module disclosed in the embodiments includes: a substrate; a first light-emitting device mounted on the substrate, having a first package, one or more first semiconductor laser elements disposed in the internal space of the first package and having a peak emission wavelength within a first wavelength ±20nm, and one or more first reflective components disposed in the internal space of the first package and having a first light-reflecting surface; and a second light-emitting device mounted on the substrate, having a second package, one or more second semiconductor laser elements disposed in the internal space of the second package and having a peak emission wavelength within a first wavelength ±20nm, and one or more second reflective components disposed in the internal space of the second package and having a second light-reflecting surface and a wavelength plate disposed on the second light-reflecting surface.

[0016] In at least one of the inventions disclosed in the embodiments, a small light-emitting device or light-emitting module is capable of emitting light with different polarization directions. Attached Figure Description

[0017] Figure 1 These are perspective views of the light-emitting devices according to the first, second, fifth, and sixth embodiments.

[0018] Figure 2 These are side views of the light-emitting devices according to the first, second, fifth, and sixth embodiments.

[0019] Figure 3 yes Figure 1 A cross-sectional view of section line III-III.

[0020] Figure 4 This is a perspective view showing the structural elements of the internal space of the package arranged in each embodiment.

[0021] Figure 5 This is a top view showing the structural elements of the encapsulation arranged in the first and fifth embodiments.

[0022] Figure 6 This is a top view used to illustrate the light emitted from the light-emitting device of the first embodiment.

[0023] Figure 7A This is a side view of the first reflective component in each embodiment.

[0024] Figure 7B This is a side view of the second reflective component in each embodiment.

[0025] Figure 8 This is a top view showing the constituent elements of the secondary mounting base configured in each embodiment.

[0026] Figure 9 This is a side view showing the constituent elements of the secondary mounting base configured in each embodiment.

[0027] Figure 10 This is a side view of the second reflective component in each embodiment, used to illustrate the lower and upper incident angles.

[0028] Figure 11 This is a perspective view of the packaging of each implementation method.

[0029] Figure 12 yes Figure 11 A cross-sectional view at section line XII-XII.

[0030] Figure 13 This is a top view of the base of each embodiment.

[0031] Figure 14 These are bottom views of the base in each embodiment.

[0032] Figure 15 yes Figure 13 A cross-sectional view of the XV-XV section line.

[0033] Figure 16A This is a top view showing the structural elements arranged in the internal space of the package in the second embodiment.

[0034] Figure 16B This is a top view used to illustrate the light emitted from the light-emitting device of the second embodiment.

[0035] Figure 17AThis is a side view of the light-emitting device according to the third embodiment.

[0036] Figure 17B This is a top view used to illustrate the light emitted from the light-emitting device of the third embodiment.

[0037] Figure 18A This is a side view of the light-emitting device according to the fourth embodiment.

[0038] Figure 18B This is a top view used to illustrate the light emitted from the light-emitting device of the fourth embodiment.

[0039] Figure 19 This is a top view used to illustrate the light emitted from the light-emitting device of the fifth embodiment.

[0040] Figure 20 This is a perspective view of the light-emitting module according to the sixth embodiment.

[0041] Figure 21 This is a top view showing the constituent elements of the internal space of the package of the first light-emitting device arranged in the sixth embodiment.

[0042] Figure 22 This is a top view used to illustrate the light emitted from the first light-emitting device in the sixth embodiment.

[0043] Figure 23 This is a top view showing the constituent elements of the internal space of the package of the second light-emitting device arranged in the sixth embodiment.

[0044] Figure 24 This is a top view used to illustrate the light emitted from the second light-emitting device in the sixth embodiment. Detailed Implementation

[0045] In this specification and claims, the term "polygon" refers to shapes that have undergone rounding, chamfering, chamfering, or filleting of their corners, including triangles, quadrilaterals, etc. Furthermore, shapes that have undergone processing of the middle portions of their sides, not limited to the corners (ends of sides), are also referred to as polygons. That is, shapes that retain the basic outline of a polygon and have undergone localized processing are included in the interpretation of "polygon" as described in this specification and claims.

[0046] Furthermore, this applies not only to polygons, but also to terms describing specific shapes such as trapezoids, circles, and concave / convex shapes. The same applies to the treatment of the sides that form the shape. That is, even if the corners or middle parts of a side are processed, the interpretation of "side" still includes the processed portion. Moreover, when distinguishing between unprocessed "polygons" or "sides" and processed shapes, the term "strict" is used, for example, written as "strict quadrilateral."

[0047] Furthermore, in this specification or claims, the descriptions of top and bottom, left and right, front and back, front and back, front and back, inside and outside, etc., are merely descriptions of relative positions, orientations, directions, etc., and may not be consistent with the actual relationship in use.

[0048] Furthermore, in the accompanying drawings, arrows are sometimes used to indicate directions such as the X, Y, and Z directions. The direction of these arrows is matched across multiple drawings of the same embodiment. Additionally, in the drawings, the direction of the arrow marked X, Y, and Z is designated as the positive direction, and the opposite direction as the negative direction. For example, the direction marked with X at the tip of the arrow is the X direction and is positive. Furthermore, in this specification, the positive X direction is referred to as the "positive X direction," and the opposite direction is referred to as the "negative X direction." The term "X direction" includes both positive and negative directions. This also applies to the Y and Z directions.

[0049] Furthermore, in this specification, when an object is described as "one or more," both the method of having one object and the method of having multiple objects are summarized and described separately. Therefore, by specifying "one or more," implementations having one or more objects, implementations having at least one object, and implementations having multiple objects are all supported.

[0050] Furthermore, in this specification, the description of "one or each" object is a summary of descriptions of one object in an embodiment having one object, descriptions of one object in an embodiment having multiple objects, and descriptions of multiple objects separately in an embodiment having multiple objects. Therefore, by describing "one or each" object, it is supported that in an embodiment having one object, at least one of these objects has description content; in an embodiment having multiple objects, each of these multiple objects has description content; and in an embodiment having one or more objects, all objects have description content.

[0051] Furthermore, in this specification, for example, when describing constituent elements, the terms "component" or "part" are sometimes used. "Companion" refers to an object that is physically treated as a single unit. An object that is physically treated as a single unit can also be described as an object treated as a component during the manufacturing process. On the other hand, "part" refers to an object that does not physically need to be treated separately. For example, "part" is used when partially capturing a part of a component, or when multiple components are grouped together as a single object.

[0052] Furthermore, the distinction between "component" and "part" in the aforementioned writing does not imply a conscious limitation of the scope of claims in the interpretation of the theory of equality. That is, even if a constituent element is described as a "component" in the claims, the applicant does not solely recognize that treating that constituent element as a single physical unit is essential for the application of the present invention.

[0053] Furthermore, in this specification or claims, if a certain constituent element is represented by multiple elements, and they are presented separately, sometimes the prefixes "first" and "second" are added to the beginning of the constituent element for distinction. Additionally, the objects distinguished in this specification and the claims may differ. Therefore, even if a constituent element in the claims is described with the same appendix as in this specification, the object defined by that constituent element may not be consistent between this specification and the claims.

[0054] For example, in this specification, there are constituent elements distinguished by the designations "first," "second," and "third." When constituent elements designated as "first" and "third" in this specification are included in the claims, from an easily observable point of view, they are sometimes distinguished by the designations "first" and "second" in the claims. In this case, the constituent elements designated as "first" and "second" in the claims refer to the constituent elements designated as "first" and "third" in this specification, respectively. Furthermore, this rule is not limited to constituent elements and can be reasonably and flexibly applied to other objects.

[0055] Hereinafter, methods for implementing the present invention will be described. Furthermore, specific methods for implementing the present invention will be described with reference to the accompanying drawings. However, the methods for implementing the present invention are not limited to these specific methods. That is, the illustrated embodiments are not the only ways to implement the present invention. In addition, the size, positional relationships, etc., of the components shown in the drawings are sometimes exaggerated for ease of understanding.

[0056] <First Implementation Method>

[0057] The light-emitting device 1 of the first embodiment will be described. Figures 1 to 15 This is a diagram illustrating an exemplary manner of the light-emitting device 1. Figure 1 This is a three-dimensional view of the light-emitting device 1. Figure 2 This is a side view of the light-emitting device 1. Figure 3 yes Figure 1 A cross-sectional view of the light-emitting device 1 at section line III-III. Figure 4 This is a perspective view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 1. Figure 5 This is a top view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 1. Additionally, in Figure 5 The diagram of wiring 60 is omitted. Figure 6 This is a top view used to illustrate the light emitted from the light-emitting device 1. Furthermore, the shaded lines indicate the shape of the light emitted from the light-emitting device 1. Additionally, L1 and L2 represent light with different polarization directions, resulting in different shaded lines. Figure 7A This is a side view of the first reflective component 40A. Figure 7B This is a side view of the second reflective component 40B. Figure 8 This is a top view showing the components configured on the secondary mounting base 30. Figure 9 This is a side view showing the constituent elements configured on the secondary mounting base 30. Figure 10 This is a schematic side view used to illustrate the lower incident angle θ1 and upper incident angle θ2 of the second reflecting component 40B. Figure 11 This is a 3D view of package 10. Figure 12 yes Figure 11 A cross-sectional view of package 10 at section line XII-XII. Figure 13 This is a top view of base 11. Figure 14 This is a bottom view of base 11. Figure 15 yes Figure 13 A cross-sectional view of the substrate 11 at the XV-XV section line.

[0058] The light-emitting device 1 comprises multiple components. These components include a package 10, multiple semiconductor laser elements 20, one or more secondary mounting bases 30, multiple reflective components 40, one or more protective elements 50, multiple wirings 60, and optical components 70.

[0059] In addition, the light-emitting device 1 may also include other constituent elements. For example, the light-emitting device 1 may also include a semiconductor laser element separately from one or more semiconductor laser elements 20. Alternatively, the light-emitting device 1 may not include some of the constituent elements listed herein.

[0060] First, let’s explain each of the constituent elements.

[0061] (Package 10)

[0062] Package 10 includes a base 11 and a cover 14. The cover 14 is joined to the base 11 to form package 10. An internal space is defined within package 10 for configuring other constituent elements. This internal space is a closed space surrounded by the base 11 and the cover 14. Furthermore, this internal space can be sealed in a vacuum or hermetically sealed state.

[0063] When viewed from above, the outer edge of package 10 is rectangular. This rectangle can be a rectangle with a long side and a short side. In the illustrated package 10, the long side of the rectangle is in the same direction as the X direction, and the short side is in the same direction as the Y direction. Alternatively, the outer edge of package 10 may not be rectangular when viewed from above.

[0064] In package 10, an internal space is formed for configuring other constituent elements. The first upper surface 11A of package 10 is part of the area defining the internal space. In addition, each inner surface 11E and the lower surface 14B of package 10 are part of the area defining the internal space.

[0065] The substrate 11 has a first upper surface 11A and a lower surface 11B. The substrate 11 has a second upper surface 11C. The substrate 11 has one or more outer surfaces 11D. The substrate 11 has one or more inner surfaces 11E. One or more outer surfaces 11D intersect with the second upper surface 11C. One or more outer surfaces 11D intersect with the lower surface 11B. One or more inner surfaces 11E intersect with the second upper surface 11C.

[0066] When viewed from above, the outer edge of the substrate 11 is rectangular. When viewed from above, the outer edge of the substrate 11 is the same as the outer edge of the package 10. When viewed from above, the outer edge of the first upper surface 11A is rectangular. This rectangle can be a rectangle with a long side and a short side. The direction of the long side of the first upper surface 11A is parallel to the direction of the long side of the outer edge of the substrate 11. Alternatively, when viewed from above, the outer edge of the first upper surface 11A may not be rectangular.

[0067] When viewed from above, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C is an annular surface that surrounds the first upper surface 11A when viewed from above. The second upper surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second upper surface 11C is referred to as the inner frame of the second upper surface 11C, and the frame defined by the outer edge of the second upper surface 11C is referred to as the outer frame of the second upper surface 11C.

[0068] The substrate 11 has a recess surrounded by a frame formed by a second upper surface 11C. The recess defines a portion in the substrate 11 that is recessed downwards from the second upper surface 11C. A first upper surface 11A is part of the recess. One or more inner side surfaces 11E are part of the recess. The second upper surface 11C is located above the first upper surface 11A.

[0069] The base 11 has one or more stepped portions 11F. Each stepped portion 11F has an upper surface 11G and a side surface 11H that intersects with and extends downward from the upper surface 11G. Here, a stepped portion 11F has only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner side surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0070] One or more step portions 11F are disposed inside the inner frame of the second upper surface 11C when viewed from above. One or more step portions 11F are formed along part or all of the inner side surface 11E when viewed from above. In the base 11, the side surface 11H is the inner side surface, but the side surface 11H and the inner side surface 11E are different surfaces. One or more inner side surfaces 11E and one or more side surfaces 11H are perpendicular to the first upper surface 11A. The perpendicularity here is allowed to be ±3 degrees.

[0071] One or more step portions 11F may include a first step portion 11F1 and a second step portion 11F2. The first step portion 11F1 and the second step portion 11F2 are disposed at positions opposite to each other on their respective side surfaces 11H. The first step portion 11F1 and the second step portion 11F2 are disposed on the short side side of the inner frame of the second upper surface 11C.

[0072] The substrate 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N can be components made of different materials. The substrate 11 can be configured to include a base component corresponding to the base portion 11M and a frame component corresponding to the frame portion 11N.

[0073] The base 11M includes a first upper surface 11A. The frame portion 11N includes a second upper surface 11C. The frame portion 11N includes one or more outer side surfaces 11D and one or more inner side surfaces 11E. The frame portion 11N includes one or more stepped portions 11F.

[0074] The lower surface of the base 11M constitutes part or all of the lower surface 11B of the base 11. When the lower surface of the base 11M constitutes part of the lower surface 11B of the base 11, the lower surface of the frame portion 11N constitutes the remaining area of ​​the lower surface 11B of the base 11.

[0075] The substrate 11 has multiple wiring portions 12A. The multiple wiring portions 12A include one or more first wiring portions 12A1 disposed in the internal space of the package 10 and one or more second wiring portions 12A2 disposed on the outer surface of the package 10.

[0076] One or more first wiring portions 12A1 are disposed on the upper surface 11G of the stepped portion 11F. The substrate 11 has one or more first wiring portions 12A1 disposed on the upper surface 11G of the first stepped portion 11F1. The substrate 11 has one or more first wiring portions 12A1 disposed on the upper surface 11G of the second stepped portion 11F2.

[0077] One or more second wiring portions 12A2 are disposed on the lower surface 11B of the package 10. One or more second wiring portions 12A2 are disposed on the lower surface 11B of the frame portion 11N. Alternatively, the second wiring portions 12A2 may be disposed on an outer surface of the package 10 that is different from the lower surface 11B.

[0078] When the substrate 11 is viewed from above, it is divided into two regions by the side 11H of the first step portion 11F1 and by an imaginary line parallel to the side 11H. In the region including the upper surface 11G of the first step portion 11F1, one or more second wiring portions 12A2 are provided on the lower surface 11B of the substrate 11.

[0079] When the substrate 11 is viewed from above, it is divided into two regions by the side 11H of the second step portion 11F2 and by an imaginary line parallel to the side 11H. In the region containing the upper surface 11G of the second step portion 11F2, one or more second wiring portions 12A2 are provided on the lower surface 11B of the substrate 11.

[0080] In the substrate 11, one or more first wiring sections 12A1 are electrically connected to second wiring sections 12A2. One or more first wiring sections 12A1 are electrically connected to different second wiring sections 12A2.

[0081] The substrate 11 has a bonding pattern 13A. The bonding pattern 13A is disposed on the second upper surface 11C. The bonding pattern 13A is arranged in a ring shape. The bonding pattern 13A is arranged in a rectangular ring shape. In a top view, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0082] The substrate 11 can be formed, for example, using ceramic as the main material. Examples of ceramics that can be used as the main material of the substrate 11 include aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide.

[0083] Here, the main material refers to the material that constitutes the largest proportion of the mass or volume in the formed object. Furthermore, when an object is formed from a single material, that material is the main material. That is, when a material is the main material, the proportion of that material can be 100%.

[0084] The substrate 11 can also be formed using base components and frame components made from different main materials. For example, the base component can be formed using a metal or a metal-containing composite, graphite, diamond, or other materials with excellent heat dissipation as the main material. Examples of metals that can be used as the main material of the base component include copper, aluminum, or iron. Examples of composites containing a metal that can be used as the main material of the base component include copper-molybdenum or copper-tungsten. For example, the frame component can be formed using ceramics, which are listed as main materials of the substrate 11 above, as the main material.

[0085] The wiring section 12A can be formed using a metallic material as the main material, for example. Examples of metallic materials that can serve as the main material for the wiring section 12A include single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The wiring section 12A can be composed of one or more metal layers, for example.

[0086] The bonding pattern 13A can be formed, for example, using a metallic material as the main material. Examples of metallic materials that can serve as the main material of the bonding pattern 13A include single metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, or alloys containing these metals. The bonding pattern 13A can be composed of one or more metallic layers.

[0087] The cover 14 has an upper surface 14A and a lower surface 14B. Additionally, the cover 14 has one or more side surfaces 14C. The cover 14 is constructed in the shape of a rectangular parallelepiped. Alternatively, the shape of the cover 14 may not be rectangular parallelepiped.

[0088] The cover 14 is joined to the base 11. The lower surface 14B of the cover 14 is joined to the second upper surface 11C of the base 11. The cover 14 is joined to the base 11 by the joining pattern 13A. The cover 14 is joined to the base 11 by an adhesive.

[0089] The cover 14 has light transmittance. Here, light transmittance means that the transmittance of light incident on the cover 14 is 80% or more. In addition, the cover 14 may also have a portion of non-transparent areas.

[0090] The cover 14 can be formed, for example, using glass as the main material. Alternatively, the cover 14 can be formed, for example, using sapphire as the main material.

[0091] (Semiconductor laser element 20)

[0092] The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and multiple side surfaces 21C. The upper surface 21A is rectangular with long and short sides. The shape of the semiconductor laser element 20 when viewed from above is rectangular with long and short sides. However, the shape of the upper surface 21A and the shape of the semiconductor laser element 20 when viewed from above are not limited to these.

[0093] The semiconductor laser element 20 has a light emitting surface 22. For example, the side surface 21C can serve as the light emitting surface 22. The side surface 21C that serves as the light emitting surface 22 intersects with the short side of the upper surface 21A. Alternatively, for example, the upper surface 21A can serve as the light emitting surface 22.

[0094] The semiconductor laser element 20 can be a single-emitter semiconductor laser element consisting of one emitter. Alternatively, the semiconductor laser element 20 can be a multi-emitter semiconductor laser element consisting of multiple emitters.

[0095] For example, the semiconductor laser element 20 can be a semiconductor laser element that emits blue light. Alternatively, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits green light. Alternatively, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits red light. Furthermore, the semiconductor laser element 20 can also be a semiconductor laser element that emits light of other colors or wavelengths.

[0096] Here, blue light refers to light with a peak emission wavelength in the range of 420nm to 494nm. Green light refers to light with a peak emission wavelength in the range of 495nm to 570nm. Red light refers to light with a peak emission wavelength in the range of 605nm to 750nm.

[0097] Semiconductor laser elements 20 that emit blue or green light can include those comprising nitride semiconductors. Examples of GaN-based semiconductors include GaN, InGaN, and AlGaN. Semiconductor laser elements 20 that emit red light can include those comprising InAlGaP, GaInP, and GaAs-based semiconductors such as GaAs and AlGaAs.

[0098] Semiconductor laser element 20 emits directional laser light. Diverging light is emitted from the light emitting surface 22 (emission end face) of semiconductor laser element 20. The light emitted from semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") in a plane parallel to the light emitting surface 22. FFP is the shape and intensity distribution of the emitted light at a position away from the light emitting surface of semiconductor laser element.

[0099] Here, light passing through the center of the elliptical shape of the FFP, in other words, light with peak intensity in the FFP's intensity distribution, is referred to as light traveling along the optical axis or light passing through the optical axis. Furthermore, in the intensity distribution of the FFP, light with a peak intensity value of 1 / e... 2 Light of the above intensities is called the primary component of light.

[0100] The shape of the FFP (Factor-Free Plane) of the light emitted from the semiconductor laser element 20 is an ellipse in a plane parallel to the light emitting surface 22, where the stacking direction is longer than the direction perpendicular to the stacking direction. The stacking direction refers to the direction in which multiple semiconductor layers containing the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the planar direction of the semiconductor layer. Alternatively, the major axis direction of the ellipse of the FFP can be called the fast axis direction of the semiconductor laser element 20, and the minor axis direction can be called the slow axis direction of the semiconductor laser element 20.

[0101] Based on the light intensity distribution of FFP, 1 / e of the peak intensity 2 The angle of light spread due to the intensity of the light is defined as the divergence angle of the light from the semiconductor laser element 20. Here, the divergence angle is defined as the angle between the peak intensity of the light (the light passing through the optical axis) and 1 / e of the peak intensity. 2 The divergence angle is represented by the angle formed by light of a given intensity. It should be noted that the divergence angle of light, in addition to being equal to 1 / e of the peak intensity, is also considered. 2 In addition to the intensity of the peak intensity, it is sometimes determined from, for example, the intensity of half the peak intensity. In this specification, when simply referred to as the "divergence angle of light," it refers to 1 / e of the peak intensity. 2 The divergence angle of light at a given intensity.

[0102] The divergence angle of the light emitted from the semiconductor laser element 20 along its fast axis can be greater than 20 degrees and less than 40 degrees. Furthermore, the divergence angle of the light along its slow axis can exceed 0 degrees and be less than 10 degrees. Additionally, the divergence angle along the fast axis is larger than the divergence angle along the slow axis.

[0103] For example, the divergence angle of blue light emitted from the semiconductor laser element 20 along its fast axis can be 20 degrees or more and less than 30 degrees, and the divergence angle along its slow axis can be 2.5 degrees or more and less than 7.5 degrees. Similarly, the divergence angle of green light emitted from the semiconductor laser element 20 along its fast axis can be 20 degrees or more and less than 30 degrees, and the divergence angle along its slow axis can be 5 degrees or more and less than 10 degrees. Likewise, the divergence angle of red light emitted from the semiconductor laser element 20 along its fast axis can be 30 degrees or more and less than 40 degrees, and the divergence angle along its slow axis can be 2.5 degrees or more and less than 7.5 degrees.

[0104] (Secondary mounting base 30)

[0105] The secondary mounting base 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be considered a mounting surface for mounting other components. The upper surface 31A is rectangular in shape. This rectangle of the upper surface 31A may have a short side and a long side. Alternatively, the shape of the upper surface 31A may not be rectangular.

[0106] The secondary mounting base 30, viewed from above, has a rectangular shape. This rectangle of the secondary mounting base 30 may have a short side and a long side. Alternatively, the shape of the secondary mounting base 30 may not be rectangular when viewed from above. When viewed from above, the secondary mounting base 30 may have a shape in which the length in one direction (hereinafter referred to as the short side direction of the secondary mounting base 30) is smaller than the length in the direction perpendicular to it (hereinafter referred to as the long side direction of the secondary mounting base 30). In the illustrated secondary mounting base 30, the short side direction is the same as the X direction, and the long side direction is the same as the Y direction.

[0107] The secondary mounting base 30 can be configured to have a substrate 32A and an upper metal member 32B. Alternatively, the secondary mounting base 30 can also be configured to have a lower metal member 32C. The upper metal member 32B is disposed on the upper surface of the substrate 32A. The lower metal member 32C is disposed on the lower surface of the substrate 32A. The secondary mounting base 30 also includes a wiring layer 33. The wiring layer 33 is disposed above the upper metal member 32B.

[0108] The substrate 32A is insulating. The substrate 32A is formed, for example, from silicon nitride, aluminum nitride, or silicon carbide. The main material of the substrate 32A can be a ceramic with good heat dissipation (high thermal conductivity).

[0109] The upper metal component 32B is primarily made of metals such as copper and aluminum. The upper metal component 32B has one or more metal layers. The upper metal component 32B may have multiple metal layers, each primarily made of a different metal.

[0110] The lower metal component 32C is primarily made of metals such as copper and aluminum. The lower metal component 32C has one or more metal layers. The lower metal component 32C may have multiple metal layers, each primarily made of a different metal.

[0111] The wiring layer 33 can be formed using metal. For example, the wiring layer 33 can be formed using AuSn solder (AuSn metal layer).

[0112] For example, the length of the short side of the secondary mounting base 30 is 700 μm or more and 1400 μm or less. Furthermore, the length of the long side of the secondary mounting base 30 is 1200 μm or more and 2700 μm or less. Additionally, the difference between the length of the long side and the length of the short side of the secondary mounting base 30 is 100 μm or more and 2000 μm or less.

[0113] For example, the thickness of the secondary mounting base 30 (width in the direction perpendicular to the upper surface 31A) is 200 μm or more and 400 μm or less. Additionally, for example, the thickness of the substrate 32A is 100 μm or more and 300 μm or less. Additionally, for example, the thickness of the upper metal component 32B is 25 μm or more and 75 μm or less. Additionally, for example, the thickness of the lower metal component 32C is 25 μm or more and 75 μm or less. Additionally, for example, the thickness of the wiring layer 33 is 1 μm or more and 5 μm or less.

[0114] (Reflective component 40)

[0115] The reflecting component 40 has a lower surface 41A and a light-reflecting surface 41B. Furthermore, the light-reflecting surface 41B is inclined relative to the lower surface 41A. The straight line connecting the lower and upper ends of the light-reflecting surface 41B is inclined relative to the lower surface 41A. The angle at which the light-reflecting surface 41B is inclined relative to the lower surface 41A is called the tilt angle of the light-reflecting surface 41B.

[0116] The light-reflecting surface 41B is a plane. Alternatively, the light-reflecting surface 41B can also be a curved surface. The tilt angle of the light-reflecting surface 41B is 45 degrees. Alternatively, the tilt angle of the light-reflecting surface 41B may not be 45 degrees.

[0117] Here, the first reflective component 40A and the second reflective component 40B, which are one of the reflective components 40, will be described.

[0118] The polarization conversion performance of the first reflecting component 40A and the second reflecting component 40B for light of a specified wavelength is different. Here, polarization conversion performance refers to the ability to change the polarization direction of light, and also includes the concept of keeping the polarization direction unchanged. For example, if the first reflecting component 40A reflects light without changing the polarization direction, while the second reflecting component 40B reflects light by changing the polarization direction, it can also be said that their polarization conversion performances are different.

[0119] As components that change the polarization direction of light, examples include half-wave plate and quarter-wave plate. A half-wave plate is a wavelength plate that emits light with a phase difference of λ / 2 between the two perpendicularly polarized components of the incident light. A quarter-wave plate is a wavelength plate that emits light with a phase difference of λ / 4 between the two perpendicularly polarized components of the incident light. Wavelength plates can also be called polarization conversion components.

[0120] When light of a predetermined wavelength and the same wavelength and polarization direction is incident on the first reflector 40A and the second reflector 40B, the polarization direction of the light emitted from the first reflector 40A after being reflected by the light reflecting surface 41B of the first reflector 40A is different from the polarization direction of the light emitted from the second reflector 40B after being reflected by the light reflecting surface 41B of the second reflector 40B.

[0121] For example, the first reflecting component 40A and the second reflecting component 40B can have different polarization conversion properties relative to light of a specified wavelength by using wavelength plates with different polarization conversion properties. Alternatively, for example, in the first reflecting component 40A and the second reflecting component 40B, one reflecting component 40 has a wavelength plate and the other reflecting component 40 does not have a wavelength plate, thereby enabling them to have different polarization conversion properties relative to light of a specified wavelength.

[0122] The second reflective component 40B has a wavelength plate 42 disposed on the light-reflecting surface 41B. The wavelength plate 42 has a first surface 42A and a second surface 42B that is the opposite side of the first surface 42A. The second surface 42B is located between the first surface 42A and the light-reflecting surface 41B.

[0123] The first reflective component 40A does not have a wavelength plate on the light-reflecting surface 41B. The shape of the first reflective component 40A is the same as that of the second reflective component 40B except for the wavelength plate 42. Correspondingly, the shape of the second reflective component 40B is larger than that of the first reflective component 40A, which has a wavelength plate 42.

[0124] The thickness of the wavelength plate 42 from the first surface 42A to the second surface 42B is 5 μm or less. Alternatively, this thickness can be 1 μm or more. It should be noted that this thickness can be 2 μm or less. This allows the size difference between the first reflective element 40A and the second reflective element 40B to be suppressed.

[0125] The reflectivity and polarization conversion performance of the second reflective component 40B may vary depending on the angle of incidence of the light incident on the first surface 42A of the wavelength plate 42. Assuming light with a large angle of incidence, such as 50 degrees or more, is incident on the first surface 42A, the second reflective component 40B maintains a certain level of reflectivity and polarization conversion performance over a large angle of incidence range.

[0126] The second reflecting component 40B maintains a polarization conversion performance of 85% or more relative to a specified wavelength range for light incident on the first surface 42A within an angle of incidence of 20 degrees to 70 degrees (hereinafter referred to as the "first condition"). Alternatively, within the same angle of incidence, the maintenance rate of polarization conversion performance is 90% or more relative to a specified wavelength range (hereinafter referred to as the "second condition"). Alternatively, within the same angle of incidence, the maintenance rate of polarization conversion performance is 95% or more relative to a specified wavelength range (hereinafter referred to as the "third condition").

[0127] Here, the maintenance rate of polarization conversion performance refers to the ratio of the amount of light emitted with the desired polarization conversion to the amount of light incident on the second reflector 40B. For example, by using a polarizer to direct only light of a specific polarization onto the second reflector 40B, and using another polarizer to measure the amount of light of the desired polarization in the light emitted from the second reflector 40B, the maintenance rate of polarization conversion performance can be determined based on this measured value and the measured value of the amount of light of the specific polarization incident on the second reflector 40B. In the case of a configuration where a wavelength plate is provided on the light reflecting surface of the specific polarized light, theoretically, the reflectivity of the light reflecting surface is greater than or equal to the maintenance rate of polarization conversion performance.

[0128] Furthermore, the light that achieves the desired polarization conversion, for example, light that passes through the 1 / 4 wavelength plate once, is light with a phase difference of λ / 4 relative to the incident light; light that passes through the 1 / 2 wavelength plate once, is light with a phase difference of λ / 2 relative to the incident light; and light that passes through the 1 / 4 wavelength plate twice, is light with a phase difference of λ / 2 relative to the incident light. In the case of a structure with wavelength plates on the light-reflecting surface, consider that the light passes through the wavelength plates twice, once when it enters the light-reflecting surface and once when it is reflected and emitted from the light-reflecting surface.

[0129] Preferably, the second reflecting component 40B maintains a polarization conversion performance of 85% or more relative to a specified wavelength range of light within an incident angle of 15 degrees to 75 degrees (hereinafter, this condition is referred to as the "fourth condition"). Alternatively, within the incident angle range, the maintenance rate of polarization conversion performance of light within a specified wavelength range is preferably 90% or more (hereinafter, this condition is referred to as the "fifth condition").

[0130] As the range of incident angles of light incident on the wavelength plate 42 increases, the reflectivity and polarization conversion performance characteristics relative to the wavelength of light can change according to the change in the incident angle. For example, the wavelength of light with the highest reflectivity (peak reflectivity wavelength) can also change according to the change in the incident angle. Therefore, the wavelength range that satisfies the above-mentioned condition for maintaining the polarization conversion performance can be narrower, making the manufacture of the second reflective component 40B easier.

[0131] In the second reflective component 40B, regarding the first to fifth conditions for the maintenance rate of polarization conversion performance described above, the wavelength range of the light satisfying the conditions (the "specified wavelength range" in the conditions) is at least 10 nm or more. Alternatively, the specified wavelength range is more preferably at least 20 nm or more.

[0132] Furthermore, the wavelength range of the light satisfying the first condition does not need to be greater than 50 nm. In other words, the second reflective component 40B can satisfy the condition of maintaining the polarization conversion performance within a wavelength range not exceeding 50 nm, but not satisfy the condition of maintaining the polarization conversion performance within a wavelength range exceeding 50 nm.

[0133] Furthermore, the wavelength range of the light satisfying the second condition does not need to be above 40 nm. In other words, the second reflective component 40B can satisfy the condition of maintaining the polarization conversion performance within a wavelength range not exceeding 40 nm, but not satisfy the condition of maintaining the polarization conversion performance within a wavelength range exceeding 40 nm.

[0134] Furthermore, the wavelength range of the light satisfying the third condition does not need to be greater than 30 nm. In other words, the second reflective component 40B can satisfy the condition of maintaining the polarization conversion performance within a wavelength range not exceeding 30 nm, but not the condition of maintaining the polarization conversion performance within a wavelength range exceeding 30 nm.

[0135] Furthermore, the wavelength range of the light satisfying the fourth condition does not need to be above 40 nm. In other words, the second reflective component 40B can satisfy the condition of maintaining the polarization conversion performance within a wavelength range not exceeding 40 nm, but not the condition of maintaining the polarization conversion performance within a wavelength range exceeding 40 nm.

[0136] Furthermore, the wavelength range of the light satisfying the fifth condition does not need to be greater than 30 nm. In other words, the second reflective component 40B can satisfy the condition of maintaining the polarization conversion performance within a wavelength range not exceeding 30 nm, but not the condition of maintaining the polarization conversion performance within a wavelength range exceeding 30 nm.

[0137] The second reflecting component 40B only needs to satisfy any one of the first to fifth conditions described above, provided that the polarized light incident on the light reflecting surface 41B is either p-polarized or s-polarized. That is, it can be a second reflecting component 40B where both p-polarized and s-polarized incident light satisfy the condition, or it can be a second reflecting component 40B where only either p-polarized or s-polarized incident light satisfies the condition.

[0138] For example, the second reflecting member 40B is p-polarized light relative to the light incident on the light reflecting surface 41B, satisfying any one of the first to fifth conditions described above. Furthermore, it is preferable that both the p-polarized incident light and the s-polarized incident light satisfy the conditions for the second reflecting member 40B.

[0139] Within a specified wavelength range where the second reflective component 40B satisfies at least any one of the first to fifth conditions, the maximum reflectivity of the light reflected by the light-reflecting surface 41B of the first reflective component 40A is greater than the maximum maintenance rate of the polarization conversion performance of the second reflective component 40B. This reflectivity is at least 1% greater than the maintenance rate. Alternatively, the reflectivity may be at least 2% greater than the maintenance rate. Or, the reflectivity may be at least 3% greater than the maintenance rate.

[0140] The main material of the reflective component 40 can be glass, metal, etc. Heat-resistant materials can be used as the main material of the reflective component 40. Examples of main materials include quartz or BK7 (borosilicate glass) glass, and metals such as Al. The reflective component 40 can also be formed using Si as the main material.

[0141] If the main material is a reflective material such as Al, a light-reflecting surface 41B can be formed from the main material. Alternatively, instead of forming the light-reflecting surface 41B from the main material, the main material can be used to form the approximate shape of the reflective component 40, and the light-reflecting surface 41B can be formed on the surface of the approximate shape. In this case, the light-reflecting surface 41B can be formed, for example, using a metal layer such as Ag or Al, or a dielectric multilayer film such as Ta2O5 / SiO2, TiO2 / SiO2, or Nb2O5 / SiO2. The illustrated reflective component 40 has a reflective film formed of a dielectric multilayer film disposed on the surface of the approximate shape formed from the main material, forming the light-reflecting surface 41B.

[0142] The reflectivity of the light-reflecting surface 41B relative to the peak wavelength of the light incident on it is 90% or more. Alternatively, this reflectivity may be 95% or more. Furthermore, the reflectivity may be 99% or more. The reflectivity may be 100% or less.

[0143] (Protective Component 50)

[0144] The protective element 50 has an upper surface 51A, a lower surface 51B, and one or more side surfaces 51C. The protective element 50 is rectangular in shape. Alternatively, the protective element 50 may not be rectangular in shape.

[0145] The protection element 50 is used to prevent excessive current from flowing through a specific component (such as a semiconductor laser component) and causing damage. A Zener diode can be used as an example of the protection element 50. Furthermore, a Zener diode formed of Si can be employed as the Zener diode.

[0146] (Wiring 60)

[0147] Wiring 60 is a linear conductive material with its two ends serving as joints. The joints at both ends become joints with other components. Wiring 60 is used for electrical connection between two components. Wiring 60 is, for example, a metallic conductor. Metals such as gold, aluminum, silver, and copper can be used.

[0148] (Optical component 70)

[0149] The optical component 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The optical component 70 imparts optical effects to light incident upon it. The optical effects imparted to light by the optical component 70 include, for example, focusing, collimation, diffusion, polarization, diffraction, wave combining, guiding, reflection, and wavelength conversion.

[0150] The optical component 70 has an optically active surface that imparts optical effects. The upper surface 71A, lower surface 71B, or side surface 71C can serve as the optically active surface. Alternatively, the optically active surface can be located at a different position than the upper surface 71A, lower surface 71B, and side surface 71C. For example, the optically active surface can also be formed internally, rather than on the surface of the optical component 70.

[0151] Optical component 70 may have one or more lens surfaces 71D. Lens surface 71D is the optical working surface of optical component 70. Alternatively, optical component 70 with lens surface 71D may also be referred to as a lens component. Light emitted from optical component 70 through lens surface 71D is given focusing, diffusion, or collimating optical effects by optical component 70. For example, optical component 70 is a collimating lens that causes light entering optical component 70 to be collimated and emitted as collimated light.

[0152] One or more lens surfaces 71D are disposed on the upper surface 71A side. Alternatively, lens surfaces 71D may also be disposed on the lower surface 71B side. The upper surface 71A and the lower surface 71B are planar. One or more lens surfaces 71D intersect with the upper surface 71A. When viewed from above, one or more lens surfaces 71D are surrounded by the upper surface 71A.

[0153] When viewed from above, the optical component 70 has a rectangular shape. However, the shape of the optical component 70 may not be rectangular when viewed from above. The lower surface 71B is flat. No lens surface 71D is formed on the lower surface 71B side of the optical component 70. The lower surface 71B has a rectangular shape. However, the shape of the lower surface 71B may not be rectangular.

[0154] In the optical component 70, the portion that overlaps with the lens surface 71D when viewed from above is designated as a lens portion 72A. In the optical component 70, the portion that overlaps with the upper surface 71A when viewed from above is designated as a non-lens portion 72B. The lower surface 71B has a region that constitutes the lower surface of one or more lens portions 72A and a region that constitutes the lower surface of the non-lens portion 72B.

[0155] The optical component 70 may have a plurality of lens surfaces 71D continuously formed in one direction. When viewed from above, the direction in which the plurality of lens surfaces 71D are arranged is called the connecting direction of the lenses. In the illustrated optical component 70, the connecting direction is the same as the X-direction.

[0156] Multiple lens surfaces 71D are formed such that the vertices of each lens surface 71D are aligned on a straight line. This imaginary straight line connecting the vertices is parallel to the lower surface 71B of the optical component 70. Furthermore, this parallelism includes a difference within ±5 degrees.

[0157] The curvature of some or all of the multiple lens surfaces 71D, and more than two lens surfaces 71D, can be the same. All of the multiple lens surfaces 71D can have the same curvature.

[0158] The optical component 70 is transparent. The transmittance of the optical component 70 relative to the peak wavelength of light incident on it is 80% or more. The optical component 70 may also have transparent areas and opaque areas (hereinafter referred to as opaque areas). In the opaque areas, the transmittance relative to the peak wavelength of light incident on the optical component 70 is 50% or less. The optical component 70 can be formed using, for example, glass such as BK7.

[0159] Next, the light-emitting device 1 will be described.

[0160] (Light-emitting device 1)

[0161] In the light-emitting device 1, a plurality of semiconductor laser elements 20 are arranged in the internal space of the package 10. By arranging the semiconductor laser elements 20 in a sealed space, the reduction in light output caused by dust accumulation can be suppressed.

[0162] Multiple semiconductor laser elements 20 are disposed on the first upper surface 11A. The multiple semiconductor laser elements 20 are arranged in one direction. Here, the direction in which the multiple semiconductor laser elements 20 are arranged is referred to as the first direction. In the illustrated light-emitting device 1, the first direction is a direction parallel to the X direction.

[0163] The light-emitting surfaces 22 of the plurality of semiconductor laser elements 20 are aligned in a second direction, which is perpendicular to the first direction, when viewed from above. Alternatively, the plurality of semiconductor laser elements 20 may be offset in the second direction, but the offset in the second direction is preferably 30 μm or less. When the offset in the second direction increases, the light-emitting device 1 becomes larger in the second direction.

[0164] Multiple semiconductor laser elements 20 emit light in a second direction. The optical axes of the light emitted from each semiconductor laser element 20 are parallel to each other. In each semiconductor laser element 20, the optical axis of the light emitted from the light emitting surface 22 is parallel to the second direction. In the illustrated light-emitting device 1, the second direction is a direction parallel to the Y direction.

[0165] In one or each of the semiconductor laser elements 20, the fast axis direction of the light emitted from the light emitting surface 22 is parallel to the direction perpendicular to the first upper surface 11A. In one or each of the semiconductor laser elements 20, the slow axis direction of the light emitted from the light emitting surface 22 is parallel to the first direction. In the illustrated light-emitting device 1, the fast axis direction is the same as the Z direction, and the slow axis direction is the same as the X direction.

[0166] Here, among the light emitted from the plurality of semiconductor laser elements 20, the light emitted from one semiconductor laser element 20 is referred to as partial light, distinguishing the light emitted from each individual semiconductor laser element 20. The light emitted from the plurality of semiconductor laser elements 20 is composed of multiple partial lights.

[0167] The fast axis directions of the partial beams emitted from each semiconductor laser element 20 are parallel to each other. The slow axis directions of the partial beams emitted from each semiconductor laser element 20 are also parallel to each other. Multiple partial beams of light arranged in an elliptical FFP are emitted through the multiple semiconductor laser elements 20 in the first direction.

[0168] Each semiconductor laser element 20 emits light with the same divergence angle along the fast axis. Here, "same" includes a difference of ±5 degrees. Each semiconductor laser element 20 emits light with the same divergence angle along the slow axis. Here, "same" includes a difference of ±3 degrees. Multiple portions of light with the same divergence angle are emitted from the plurality of semiconductor laser elements 20. Furthermore, the plurality of semiconductor laser elements 20 may also include two or more semiconductor laser elements 20 with different divergence angles.

[0169] Each semiconductor laser element 20 emits light with the same polarization direction. Each semiconductor laser element 20 emits TE mode light from the light emission surface 22. Alternatively, each semiconductor laser element 20 emits TM mode light from the light emission surface 22.

[0170] The emission peak wavelengths of the multiple semiconductor laser elements 20 are all within ±20 nm of a first wavelength. Alternatively, the emission peak wavelengths of the multiple semiconductor laser elements 20 are all within ±10 nm of the first wavelength. In other words, the multiple semiconductor laser elements 20 are selected in such a way that the maximum difference in emission peak wavelengths among the multiple semiconductor laser elements 20 is within a wavelength range of 20 nm.

[0171] The plurality of semiconductor laser elements 20 may include two semiconductor laser elements 20 whose emission peak wavelengths differ from each other by more than 3 nm and less than 8 nm. The plurality of semiconductor laser elements 20 may include: a semiconductor laser element 20 with an emission peak wavelength of a first wavelength; a semiconductor laser element 20 with an emission peak wavelength greater than the first wavelength by more than 2 nm and less than 8 nm; and a semiconductor laser element 20 with an emission peak wavelength less than the first wavelength by more than 2 nm and less than 8 nm. By multiplexing the emission peak wavelengths within a close range, speckle noise can be reduced.

[0172] In the light-emitting device 1, multiple semiconductor laser elements 20 are mounted on one or more secondary mounting bases 30. Each semiconductor laser element 20 can be mounted on a different secondary mounting base 30. Alternatively, two or more semiconductor laser elements 20 can be mounted on a single secondary mounting base 30. The semiconductor laser elements 20 are positioned on the first upper surface 11A via the secondary mounting base 30. By clamping the secondary mounting base 30, the height of the light emission point from the first upper surface 11A to the semiconductor laser element 20 can be adjusted.

[0173] The heights of the multiple semiconductor laser elements 20 from the first upper surface 11A to the light emission point are consistent. Furthermore, this consistency includes a height directional offset of less than 30 μm from the first upper surface 11A to the light emission point. In the illustrated light-emitting device 1, the height direction is the same as the Z-direction.

[0174] In the light-emitting device 1, a plurality of reflective elements 40 are disposed within the internal space of the package 10. The plurality of reflective elements 40 are disposed on the first upper surface 11A. The plurality of reflective elements 40 are arranged in a first direction.

[0175] The plurality of reflective elements 40 includes one or more first reflective elements 40A and one or more second reflective elements 40B. The number of first reflective elements 40A provided in the light-emitting device 1 is the same as or one more than the number of second reflective elements 40B provided in the light-emitting device 1. Since the reflectivity of light on the light-reflecting surface 41B of the first reflective element 40A is greater than the polarization conversion performance maintenance rate of the second reflective element 40B, the amount of light emitted from the light-emitting device 1 increases when the number of first reflective elements 40A is greater than the number of second reflective elements 40B. Alternatively, the number of first reflective elements 40A provided in the light-emitting device 1 may be one less than the number of second reflective elements 40B provided in the light-emitting device 1.

[0176] The light-reflecting surfaces 41B of the plurality of reflective elements 40 are aligned in a second direction when viewed from above. Furthermore, this alignment includes an offset of less than 50 μm in the second direction between the plurality of reflective elements 40. By suppressing the height shift of the light emission point and the offset in the second direction of the light-reflecting surfaces 41B, it is possible to align the points where light traveling along the optical axis between the various light components illuminates the light-reflecting surfaces 41B in a straight line when viewed from above.

[0177] Light emitted from multiple semiconductor laser elements 20 is reflected by multiple reflective surfaces 41B of reflective elements 40. More than one portion of the light is reflected by a single reflective surface 41B. At least with respect to the main portion of the light, multiple portions of the light are directed towards the reflective surfaces 41B of different reflective elements 40. At least with respect to the main portion of the light, individual portions of the light are directed towards the reflective surfaces 41B of different reflective elements 40. The relationship between the reflective surface 41B and the portions of the light can be one-to-one.

[0178] The plurality of semiconductor laser elements 20 includes one or more first semiconductor laser elements 20A corresponding to one or more first reflective components 40A and one or more second semiconductor laser elements 20B corresponding to one or more second reflective components 40B. It should be noted that the divergence angles of the first semiconductor laser elements 20A and the second semiconductor laser elements 20B may also be different from each other.

[0179] Light emitted from one or more first semiconductor laser elements 20A is reflected by light-reflecting surfaces 41B of one or more first reflective components 40A. Light emitted from one or more second semiconductor laser elements 20B is reflected by light-reflecting surfaces 41B of one or more second reflective components 40B.

[0180] Light emitted from one or more second semiconductor laser elements 20B enters the first surface 42A of the wavelength plate 42 of one or more second reflective components 40B, is reflected by the light reflecting surface 41B of the wavelength plate 42 of one or more second reflective components 40B, and exits from the first surface 42A of the wavelength plate 42 of one or more second reflective components 40B.

[0181] In the plurality of reflecting elements 40, the polarization direction of the light incident on the light reflecting surface 41B is the same. p-polarized light is incident on the wavelength plate 42 of the second reflecting element 40B. Alternatively, s-polarized light can also be incident on the wavelength plate 42 of the second reflecting element 40B. For example, each semiconductor laser element 20 emits TM-mode light from the light emitting surface 22 in a second direction.

[0182] When light with the same polarization direction enters multiple reflective elements 40, the polarization direction of the light emitted from the first reflective element 40A is different from that of the light emitted from the second reflective element 40B. Furthermore, even if light with different polarization directions enters multiple reflective elements 40, the polarization direction of the light emitted from the first reflective element 40A and the light emitted from the second reflective element 40B may still be different.

[0183] When the wavelength plate 42 is a quarter-wavelength plate, when light with the same polarization direction enters the first reflecting component 40A and the second reflecting component 40B, the phase difference between the light emitted from the first reflecting component 40A and the light emitted from the second reflecting component 40B is λ / 2. When p-polarized light enters the reflecting component 40, the light emitted from the second reflecting component 40B becomes s-polarized light.

[0184] When light composed of multiple partial lights whose peak wavelengths converge to within a range of 20 nm is emitted from the light-emitting device 1, the presence of both p-polarized and s-polarized partial lights helps to reduce speckle noise. Furthermore, by employing a structure in which a wavelength plate 42 is provided on the light-reflecting surface 41B of the reflecting member 40, the light-emitting device can be miniaturized.

[0185] The light reflecting surface 41B of the multiple reflective components 40 is irradiated with divergent light emitted from the multiple semiconductor laser elements 20. By irradiating the light reflecting surface 41B with the light diverging from the light emitting surface 22, a light-emitting device 1 can be realized without placing optical components for controlling the light between the semiconductor laser elements 20 and the reflective components 40, which helps to miniaturize the light-emitting device. The light emitted from the multiple semiconductor laser elements 20 through the optical axis enters the light reflecting surface 41B of the multiple reflective components 40 at an incident angle of 45 degrees.

[0186] The light emitted from the main portion of the semiconductor laser elements 20 is irradiated onto the light reflecting surface 41B of each reflecting component 40. The light emitted from each semiconductor laser element 20 and traveling along the optical axis is irradiated onto the light reflecting surface 41B of the different reflecting components 40.

[0187] The polarization conversion performance retention rate of the second reflective component 40B is maximized at the incident angle of the light emitted from the second semiconductor laser element 20B along the optical axis and incident on the first surface 42A. In the illustrated light-emitting device 1, the polarization conversion performance retention rate is maximized when the incident angle of the light incident on the first surface 42A is 45 degrees.

[0188] Here, the cross-section taken along an imaginary plane perpendicular to the first upper surface 11A and passing through the optical axis of the light emitted from the semiconductor laser element 20 is called the optical axis cross-section. Furthermore, the angle of incidence relative to the wavelength plate 42 when the light travels along a straight line connecting the light emission point of the second semiconductor laser element 20B's light emission surface 22 to the lower end of the first surface 42A of the second reflector 40B, as seen in the optical axis cross-section, is called the lower limit angle of incidence θ1. Additionally, the angle of incidence relative to the wavelength plate 42 when the light travels along a straight line connecting the light emission point of the second semiconductor laser element 20B's light emission surface 22 to the upper end of the first surface 42A of the second reflector 40B, as seen in the optical axis cross-section, is called the upper limit angle of incidence θ2 (see reference). Figure 10 ).

[0189] In the light-emitting device 1, the second semiconductor laser element 20B and the second reflective component 40B are arranged such that the upper limit incident angle θ2 is 70 degrees or more. Alternatively, the second semiconductor laser element 20B and the second reflective component 40B are arranged such that the upper limit incident angle θ2 is 75 degrees or more. This allows light traveling above the optical axis from the second semiconductor laser element 20B, with an incident angle of less than the upper limit incident angle θ2 with the first surface 42A, to be directed towards the wavelength plate 42.

[0190] Theoretically, the smaller the distance between the light emitting surface 22 of the second semiconductor laser element 20B and the first surface 42A of the wavelength plate 42, the larger the upper limit incident angle θ2. On the other hand, if the light emitting surface 22 is too close to the first surface 42A, the second semiconductor laser element 20B and the first surface 42A may overlap when viewed from above, potentially becoming an obstacle to the light emitted from the second reflecting member 40B. Taking this into consideration, the second semiconductor laser element 20B and the second reflecting member 40B are preferably arranged such that the upper limit incident angle θ2 is 80 degrees or less.

[0191] In relation to the second reflective member 40B that satisfies at least any one of the first to third conditions, the upper limit incident angle θ2 is preferably 70 degrees or more and 80 degrees or less. Furthermore, in relation to the second reflective member 40B that satisfies at least any one of the fourth or fifth conditions, the upper limit incident angle θ2 is preferably 75 degrees or more and 80 degrees or less.

[0192] In one or more second semiconductor laser elements 20B and one or more second reflective components 40B, the corresponding second semiconductor laser element 20B and second reflective component 40B can satisfy the above-mentioned upper limit incident angle θ2 condition.

[0193] Even when the divergent light enters the second reflective component 40B, the range of the incident angle of the light is adjusted by the configuration of the second semiconductor laser element 20B and the second reflective component 40B based on the incident angle dependence of the polarization conversion performance in the wavelength plate 42, thereby enabling the desired emitted light to be effectively emitted from the light-emitting device 1.

[0194] Furthermore, considering the assumed range of the incident angle of light incident on the reflecting component 40, the angular range of the incident angle that yields sufficient polarization conversion performance in the wavelength plate 42 is determined. Correspondingly, the wavelength range of light yielding sufficient polarization conversion performance is kept relatively narrow, thereby enabling efficient manufacturing of the wavelength plate 42. When sufficient polarization conversion performance is desired over a wider wavelength range, the thickness from the first surface 42A to the second surface 42B of the wavelength plate 42 may increase.

[0195] When the first reflective component 40A and the second reflective component 40B are arranged in the first direction, a minimum spacing may be required between the semiconductor laser element 20 and the reflective component 40. In this case, the spacing between the first reflective component 40A and the semiconductor laser element 20 is larger than the spacing between the second reflective component 40B and the semiconductor laser element 20. If the wavelength plate 42 becomes thicker, the spacing between the first reflective component 40A and the semiconductor laser element 20 also becomes larger, and the light-emitting device 1 becomes larger.

[0196] Furthermore, given the same light emission point height, the greater the thickness of the wavelength plate 42, the greater the difference between the range of incident angles of light incident on the light reflecting surface 41B and the range of incident angles of light incident on the first surface 42A of the wavelength plate 42. Therefore, the thinner the wavelength plate 42, the better, in order to ensure efficient reflection of properly polarized light on the light reflecting surface 41B.

[0197] The divergence angle of the light emitted from the second semiconductor laser element 20B along its fast axis is preferably less than the value obtained by subtracting the incident angle of the light passing through the optical axis into the wavelength plate 42 from the upper incident angle θ2. By satisfying this relationship between the divergence angle and the upper incident angle θ2, the polarization-converted light can be efficiently emitted from the second reflecting component 40B.

[0198] In the light-emitting device 1, the divergence angle of the light emitted from the second semiconductor laser element 20B in the fast axis direction is sometimes greater than the value obtained by subtracting the incident angle of the light passing through the optical axis into the wavelength plate 42 from the upper limit incident angle θ2. In this case, a portion of the light in the main part does not irradiate the wavelength plate 42. Therefore, if the difference between the divergence angle in the fast axis direction and the value obtained by subtracting the incident angle of the light passing through the optical axis into the wavelength plate 42 from the upper limit incident angle θ2 is too large, the amount of light emitted after polarization conversion becomes less. Therefore, in one or more second reflecting members 40B, the intensity of the light irradiated towards the upper end of the light reflecting surface 41B, which is part of the light irradiating the light reflecting surface 41B, is preferably less than 15% of the peak intensity.

[0199] In the light-emitting device 1, a plurality of reflective components 40 are arranged in such a manner that no second reflective component 40B is disposed between the first reflective component 40A and the first reflective component 40A is disposed between the second reflective component 40B and the second reflective component 40A.

[0200] A second reflective member 40B is not disposed between an imaginary straight line passing through one end of one or more first reflective members 40A and parallel to the second direction, and an imaginary straight line passing through the other end and parallel to the second direction. Similarly, a first reflective member 40A is not disposed between an imaginary straight line passing through one end of one or more second reflective members 40B and parallel to the second direction, and an imaginary straight line passing through the other end and parallel to the second direction.

[0201] In the light-emitting device 1, one or more protective elements 50 are disposed within the internal space of the package 10. One or more protective elements 50 are mounted on the secondary mounting base 30. One protective element 50 protects one or more semiconductor laser elements 20.

[0202] In the light-emitting device 1, multiple wirings 60 are provided for electrical connection. The multiple wirings 60 include two or more wirings 60 for electrically connecting multiple semiconductor laser elements 20 to the package 10. The multiple wirings 60 also include one or more wirings 60 for electrically connecting one or more protection elements 50 to the multiple semiconductor laser elements 20. By providing multiple wirings 60, the multiple semiconductor laser elements 20 are electrically connected to the first wiring section 12A1 and the second wiring section 12A2.

[0203] Multiple semiconductor laser elements 20 are electrically connected in series. A current path is formed from the first wiring section 12A1 located in the first step section 11F1 through the multiple semiconductor laser elements 20 to the first wiring section 12A1 located in the second step section 11F2. Alternatively, a current path is formed from the first wiring section 12A1 located in the second step section 11F2 through the multiple semiconductor laser elements 20 to the first wiring section 12A1 located in the first step section 11F1.

[0204] Light emitted from multiple semiconductor laser elements 20 is reflected by multiple reflective components 40 and emitted upward from the upper surface 14A. The polarization direction of the light emitted from one or more first semiconductor laser elements 20A and emitted from the upper surface 14A is different from the polarization direction of the light emitted from one or more second semiconductor laser elements 20B and emitted from the upper surface 14A.

[0205] The polarization ratio of one or more portions of the light emitted from the upper surface 14A, which are emitted from one or more first semiconductor laser elements 20A and reflected by one or more first reflecting members 40A and then emitted from the upper surface 14A, is 10 or higher. This polarization ratio can be measured, for example, only from light emitted from one or more of the plurality of semiconductor laser elements 20's first semiconductor laser elements 20A. Alternatively, for example, light can be emitted from the plurality of semiconductor laser elements 20, and a light-shielding member can be arranged in the optical path of the light emitted from one or more second semiconductor laser elements 20B for measurement. Furthermore, the polarization ratio here represents the ratio of p-polarized light to s-polarized light; whether p-polarized light or s-polarized light is used as the denominator depends on the polarization direction of the incident light. The denominator is the one where the polarization ratio of p-polarized light and s-polarized light is 1 or higher.

[0206] The polarization ratio of the light emitted from the upper surface 14A is 5 or less. Furthermore, it is preferable that the polarization ratio is 3 or less, and more preferably 2 or less. This light includes multiple portions of light emitted from one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B. The polarization ratio here uses the same denominator as the polarization ratio of the one or more portions of light emitted from the aforementioned one or more first semiconductor laser elements 20A.

[0207] In the light-emitting device 1, the optical component 70 is fixed to the package 10. The optical component 70 is engaged with the cover 14 and fixed to the package 10. Light emitted from the plurality of semiconductor laser elements 20 and from the package 10 enters the optical component 70. The light entering the optical component 70 is given an optical effect by the optical action surface and exits from the optical component 70.

[0208] The optical component 70 has multiple lens surfaces 71D corresponding to each semiconductor laser element 20. The main portion of light emitted from a semiconductor laser element 20, i.e., the light reflected by the reflecting component 40, passes through a lens surface 71D. The portion of light that has passed through each lens surface becomes collimated light and is emitted from the optical component 70. Multiple collimated portions of light are emitted from the light-emitting device 1 along a first direction.

[0209] <Second Implementation Method>

[0210] The light-emitting device 2 of the second embodiment will be described. Figures 1 to 4 as well as Figures 7A to 16B The accompanying drawing is an exemplary embodiment of the light-emitting device 2. Figure 1 This is a three-dimensional view of the light-emitting device 2. Figure 2 This is a side view of the light-emitting device 2. Figure 3 yes Figure 1 A cross-sectional view of the light-emitting device 2 at section line III-III. Figure 4 This is a perspective view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 2. Figure 16A This is a top view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 2. Additionally, in Figure 16A The diagram of wiring 60 is omitted in the text. Figure 16B This is a top view used to illustrate the light emitted from the light-emitting device 2. Furthermore, the shaded lines indicate the shape of the light emitted from the light-emitting device 2. Additionally, L1 and L2 represent light with different polarization directions, hence the different shaded lines. Figure 7A This is a side view of the first reflective component 40A. Figure 7B This is a side view of the second reflective component 40B. Figure 8 This is a top view showing the components configured on the secondary mounting base 30. Figure 9 This is a side view showing the constituent elements configured on the secondary mounting base 30. Figure 10 This is a schematic side view used to illustrate the lower incident angle θ1 and upper incident angle θ2 of the second reflecting component 40B. Figure 11 This is a 3D view of package 10. Figure 12 yes Figure 11 A cross-sectional view of package 10 at section line XII-XII. Figure 13 This is a top view of base 11. Figure 14 This is a bottom view of base 11. Figure 15 yes Figure 13 A cross-sectional view of the substrate 11 at the XV-XV section line.

[0211] The above description of the light-emitting device 1 of the first embodiment and its constituent elements, starting from the light-emitting device 2 Figures 1 to 4 ,as well as Figures 7A to 16BThe entire description of the light-emitting device 2, after removing any potentially contradictory content from the accompanying drawings, also applies. All non-contradictory content will not be repeated here.

[0212] (Light-emitting device 2)

[0213] In the light-emitting device 2, the plurality of reflective elements 40 include a second reflective element 40B disposed between two first reflective elements 40A. Additionally, the plurality of reflective elements 40 include a first reflective element 40A disposed between two second reflective elements 40B. The plurality of reflective elements 40 are arranged with the first reflective elements 40A and the second reflective elements 40B alternately. This arrangement also enables the reduction of speckle noise.

[0214] Furthermore, by alternately arranging the first reflective element 40A and the second reflective element 40B, a mechanism for reducing speckle noise can be achieved through adjacent first reflective elements 40A and second reflective elements 40B. Therefore, one or more speckle noise reduction units composed of adjacent first reflective elements 40A and second reflective elements 40B can be configured, enabling optical control of the unit unit.

[0215] <Third Implementation Method>

[0216] The light-emitting device 3 of the third embodiment will be described. Figures 1 to 15 , Figure 17A as well as Figure 17B The accompanying drawing is an exemplary embodiment of the light-emitting device 3. Figure 1 This is a perspective view of the light-emitting device 1, which is a component of the light-emitting device 3. Figure 2 This is a side view of the light-emitting device 1. Figure 3 yes Figure 1 A cross-sectional view of the light-emitting device 1 at section line III-III. Figure 4 This is a perspective view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 1. Figure 5 This is a top view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 1. Additionally, in Figure 5 The diagram of wiring 60 is omitted in the text. Figure 6 This is a top view used to illustrate the light emitted from the light-emitting device 1. Furthermore, the shaded lines indicate the shape of the light emitted from the light-emitting device 1. Additionally, L1 and L2 represent light with different polarization directions, resulting in different shaded lines. Figure 7A This is a side view of the first reflective component 40A. Figure 7B This is a side view of the second reflective component 40B. Figure 8 This is a top view showing the components configured on the secondary mounting base 30. Figure 9This is a side view showing the constituent elements configured on the secondary mounting base 30. Figure 10 This is a schematic side view used to illustrate the lower incident angle θ1 and upper incident angle θ2 of the second reflecting component 40B. Figure 11 This is a 3D view of package 10. Figure 12 yes Figure 11 A cross-sectional view of package 10 at section line XII-XII. Figure 13 This is a top view of base 11. Figure 14 This is a bottom view of base 11. Figure 15 yes Figure 13 A cross-sectional view of the substrate 11 at the XV-XV section line. Figure 17A This is a side view of the light-emitting device 3. Figure 17B This is a top view used to illustrate the light emitted from the light-emitting device 3. Furthermore, the shaded lines indicate the shape of the light emitted from the light-emitting device 3. Additionally, L1 and L2 represent light with different polarization directions, resulting in different shaded lines.

[0217] The light-emitting device 1 of the first embodiment, the light-emitting device 2 of the second embodiment, and the description of each component element, starting from the light-emitting device 3... Figures 1 to 15 , Figure 17A as well as Figure 17B The entire description of the light-emitting device 3, after removing any potentially contradictory content from the accompanying drawings, also applies. All non-contradictory content will not be repeated here.

[0218] (Partial polarization conversion component 80)

[0219] The partial polarization conversion component 80 has a polarization conversion region 81. The polarization direction of light incident into the polarization conversion region 81 is converted before it exits from the partial polarization conversion component 80. The polarization conversion region 81 can be formed by setting a wavelength plate.

[0220] (Light-emitting device 3)

[0221] The light-emitting device 3 is a light-emitting device that includes the light-emitting device 1 of the first embodiment and a partial polarization conversion component 80.

[0222] In the light-emitting device 3, a partial polarization conversion component 80 is provided in the optical path of the light emitted from the optical component 70. Light emitted from the plurality of semiconductor laser elements 20 enters the partial polarization conversion component 80.

[0223] Regarding each portion of the light, a portion of the light enters the polarization conversion region 81, while the remaining portion does not. Preferably, 50% ± 5% of the light in each portion enters the polarization conversion region 81. Thus, since the portion of light emitted from a semiconductor laser element 20 contains first and second light with different polarization directions, a reduction in speckle noise can be expected.

[0224] The partial polarization conversion component 80 can either allow incident light to pass through and exit, or it can reflect the incident light and exit. When allowing light to pass through, the wavelength plate forming the polarization conversion region 81 can be a half-wavelength plate. When reflecting light, the wavelength plate forming the polarization conversion region 81 can be a quarter-wavelength plate. Thus, the polarization conversion region 81 can convert p-polarized light into s-polarized light, or convert s-polarized light into p-polarized light and exit.

[0225] <Fourth Implementation Method>

[0226] The light-emitting device 4 of the fourth embodiment will be described. Figures 1 to 4 , Figures 7A to 16B , Figure 18A as well as Figure 18B The accompanying drawing is an exemplary embodiment of the light-emitting device 4. Figure 1 This is a perspective view of the light-emitting device 2, which is a component of the light-emitting device 4. Figure 2 This is a side view of the light-emitting device 2. Figure 3 yes Figure 1 A cross-sectional view of the light-emitting device 2 at section line III-III. Figure 4 This is a perspective view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 2. Figure 16A This is a top view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 2. Additionally, in Figure 16A The diagram of wiring 60 is omitted in the text. Figure 16B This is a top view used to illustrate the light emitted from the light-emitting device 2. Furthermore, the shaded lines indicate the shape of the light emitted from the light-emitting device 2. Additionally, L1 and L2 represent light with different polarization directions, hence the different shaded lines. Figure 7A This is a side view of the first reflective component 40A. Figure 7B This is a side view of the second reflective component 40B. Figure 8 This is a top view showing the components configured on the secondary mounting base 30. Figure 9 This is a side view showing the constituent elements configured on the secondary mounting base 30. Figure 10 This is a schematic side view used to illustrate the lower incident angle θ1 and upper incident angle θ2 of the second reflecting component 40B. Figure 11 This is a 3D view of package 10. Figure 12 yes Figure 11 A cross-sectional view of package 10 at section line XII-XII. Figure 13 This is a top view of base 11. Figure 14 This is a bottom view of base 11. Figure 15 yes Figure 13 A cross-sectional view of the substrate 11 at the XV-XV section line. Figure 18A This is a side view of the light-emitting device 4. Figure 18B This is a top view used to illustrate the light emitted from the light-emitting device 4. Furthermore, the shaded lines indicate the shape of the light emitted from the light-emitting device 4. Additionally, L1 and L2 represent light with different polarization directions, resulting in different shaded lines.

[0227] The light-emitting device 1 of the first embodiment, the light-emitting device 2 of the second embodiment, the light-emitting device 3 of the third embodiment, and the light-emitting device 4 mentioned in the description of each component are described above. Figures 1 to 4 , Figures 7A to 16B , Figure 18A as well as Figure 18B The entire description of the light-emitting device 4, after removing any potentially contradictory content from the accompanying drawings, also applies. All non-contradictory content will not be repeated here.

[0228] The difference between the light-emitting device 4 and the light-emitting device 3 is that the light-emitting device 1 of the first embodiment, which is included in the light-emitting device 3 of the third embodiment, is replaced by the light-emitting device 2 of the second embodiment. Since there are no other differences, the light-emitting device 4 can be described based on the description of the first to third embodiments already described.

[0229] <Fifth Implementation Method>

[0230] The light-emitting device 5 of the fifth embodiment will be described. Figures 1 to 5 , Figures 7A to 15 as well as Figure 19 The accompanying drawing is an exemplary embodiment of the light-emitting device 5. Figure 1 This is a three-dimensional view of the light-emitting device 5. Figure 2 This is a side view of the light-emitting device 5. Figure 3 yes Figure 1 A cross-sectional view of the light-emitting device 5 at section line III-III. Figure 4 This is a perspective view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 5. Figure 5 This is a top view showing the constituent elements of the internal space of the package 10 disposed in the light-emitting device 5. Additionally, in Figure 5 The diagram of wiring 60 is omitted in the text. Figure 19 This is a top view used to illustrate the light emitted from the light-emitting device 5. Furthermore, the shaded lines indicate the shape of the light emitted from the light-emitting device 5. Additionally, L1 and L2 represent light with different polarization directions, resulting in different shaded lines. Figure 7A This is a side view of the first reflective component 40A. Figure 7B This is a side view of the second reflective component 40B. Figure 8 This is a top view showing the components configured on the secondary mounting base 30. Figure 9This is a side view showing the constituent elements configured on the secondary mounting base 30. Figure 10 This is a schematic side view used to illustrate the lower incident angle θ1 and upper incident angle θ2 of the second reflecting component 40B. Figure 11 This is a 3D view of package 10. Figure 12 yes Figure 11 A cross-sectional view of package 10 at section line XII-XII. Figure 13 This is a top view of base 11. Figure 14 This is a bottom view of base 11. Figure 15 yes Figure 13 A cross-sectional view of the substrate 11 at the XV-XV section line.

[0231] The above description of the light-emitting device 1 of the first embodiment and its constituent elements, starting from the light-emitting device 5 Figures 1 to 5 , Figures 7A to 15 as well as Figure 19 The entire accompanying drawing, excluding any content that could be considered contradictory or contradicts the description of the following light-emitting device 5, also applies to the description of light-emitting device 5. All content that does not contradict is not repeated here.

[0232] (Light-emitting device 5)

[0233] In the light-emitting device 5, the first semiconductor laser element 20A and the second semiconductor laser element 20B emit light with different polarization directions. The first semiconductor laser element 20A emits TE mode light, and the second semiconductor laser element 20B emits TM mode light. Alternatively, the first semiconductor laser element 20A emits TM mode light, and the second semiconductor laser element 20B emits TE mode light.

[0234] The first semiconductor laser element 20A and the second semiconductor laser element 20B emit light of different colors. The difference between the peak emission wavelength of the light emitted from the first semiconductor laser element 20A and the peak emission wavelength of the light emitted from the second semiconductor laser element 20B is 30 nm or more. Alternatively, the difference can be 50 nm or more. Alternatively, the difference can be 70 nm or more.

[0235] In the light-emitting device 5, the plurality of semiconductor laser elements 20 include one or more semiconductor laser elements 20 that emit red light, one or more semiconductor laser elements 20 that emit green light, and one or more semiconductor laser elements 20 that emit blue light.

[0236] Furthermore, the polarization direction of the red light emitted from the semiconductor laser element 20 is different from the polarization direction of the green light emitted from the semiconductor laser element 20, and also different from the polarization direction of the blue light emitted from the semiconductor laser element 20. On the other hand, the polarization direction of the green light emitted from the semiconductor laser element 20 is the same as the polarization direction of the blue light emitted from the semiconductor laser element 20.

[0237] In the light-emitting device 5, light with different polarization directions emitted from multiple semiconductor laser elements 20 becomes light with the same polarization direction and is emitted from multiple reflective components 40. By directing portions of light with different polarization directions into the first reflective component 40A and the second reflective component 40B, light with the same polarization direction is emitted. For optical control, it is sometimes desirable for the polarization directions to be consistent; in the case of the light-emitting device 5, it is possible to emit light with consistent polarization directions.

[0238] For example, the plurality of semiconductor laser elements 20 include one or more first semiconductor laser elements 20A that emit red light, one or more second semiconductor laser elements 20B that emit green light, and one or more second semiconductor laser elements 20B that emit blue light.

[0239] Among the multiple semiconductor laser elements 20, the divergence angle along the fast axis of the semiconductor laser element 20 emitting red light is greater than that of the semiconductor laser element 20 emitting green light, and also greater than that of the semiconductor laser element 20 emitting blue light. The larger divergence angle allows for a wider range of incident angles of light entering the wavelength plate 42, thus enabling the wavelength plate 42 to suppress light loss by allowing light with a smaller divergence angle to enter.

[0240] Additionally, for example, the plurality of semiconductor laser elements 20 may include one or more second semiconductor laser elements 20B that emit red light, one or more first semiconductor laser elements 20A that emit green light, and one or more first semiconductor laser elements 20A that emit blue light.

[0241] When the diverging light is incident on the wavelength plate 42, in order to maintain polarization conversion performance over a wide range of incident angles, the wavelength range of the light incident on one or more second reflective elements 40B is preferably narrow. When the peak emission wavelength of the semiconductor laser element 20 emitting blue light differs from that of the semiconductor laser element 20 emitting green light by more than 50 nm, directing red light onto the second reflective element 40B and directing green and blue light onto the first reflective element 40A respectively simplifies the manufacture of the wavelength plate 42. Alternatively, it is not necessary to prepare separate wavelength plates 42 for green light and blue light, which offers advantages in terms of productivity.

[0242] <Sixth Implementation Method>

[0243] The light-emitting module 901 of the sixth embodiment will be described. Figures 1 to 4 , Figures 7A to 15 ,as well as Figures 20 to 24 The accompanying drawing is an exemplary embodiment of the light-emitting module 901. Figure 20 This is a 3D view of the light-emitting module 901. Furthermore, Figure 20 The XYZ directions in the first light-emitting device 6 match the XYZ directions in the second light-emitting device 7, but do not match the XYZ directions in the first light-emitting device 6. Figure 1 This is a perspective view of the first light-emitting device 6 and the second light-emitting device 7. Figure 2 This is a side view of the first light-emitting device 6 and the second light-emitting device 7. Figure 3 yes Figure 1 A cross-sectional view of the first light-emitting device 6 and the second light-emitting device 7 at section line III-III. Figure 4 This is a perspective view showing the structural elements of the first light-emitting device 6 and the second light-emitting device 7 arranged in the internal space of the package 10. Figure 21 This is a top view showing the structural elements of the internal space of the package 10 disposed in the first light-emitting device 6. Figure 22 This is a top view used to illustrate the light emitted from the first light-emitting device 6. Figure 23 This is a top view showing the structural elements of the internal space of the package 10 arranged in the second light-emitting device 7. Figure 24 This is a top view used to illustrate the light emitted from the second light-emitting device 7. Additionally, in Figure 21 and Figure 23 The diagram of wiring 60 is omitted. Figure 22 and Figure 24 The shadow represents the shape of the light emitted from the light-emitting device 1. In addition, L1 and L2 represent light with different polarization directions, which makes the shadow lines different. Figure 7A This is a side view of the first reflective component 40A. Figure 7B This is a side view of the second reflective component 40B. Figure 8 This is a top view showing the components configured on the secondary mounting base 30. Figure 9 This is a side view showing the constituent elements configured on the secondary mounting base 30. Figure 10 This is a schematic side view used to illustrate the lower incident angle θ1 and upper incident angle θ2 of the second reflecting component 40B. Figure 11 This is a 3D view of package 10. Figure 12 yes Figure 11 A cross-sectional view of package 10 at section line XII-XII. Figure 13 This is a top view of base 11. Figure 14 This is a bottom view of base 11. Figure 15 yes Figure 13 A cross-sectional view of the substrate 11 at the XV-XV section line.

[0244] In the above description of the light-emitting device 1 of the first embodiment to the light-emitting device 5 of the fifth embodiment and each constituent element, except for the light-emitting module 901... Figures 1 to 4 , Figures 7A to 15 as well as Figures 20 to 24 All content, except for content contradicting the accompanying drawings and the following description of the light-emitting module 901, also applies to the description of the light-emitting module 901. Content that does not contradict is not repeated here.

[0245] The light-emitting module 901 has multiple components. These components include a first light-emitting device 6, a second light-emitting device 7, a wiring board 101, a connector 201, and a thermistor 301. In addition, the light-emitting module 901 may also have other components, or it may not have some of the components listed herein.

[0246] The first light-emitting device 6 has multiple components. These multiple components include a package 10, one or more first semiconductor laser elements 20A, one or more secondary mounting bases 30, one or more first reflective components 40A, one or more protective elements 50, multiple wirings 60, and optical components 70.

[0247] The second light-emitting device 7 comprises multiple components. These multiple components include a package 10, one or more second semiconductor laser elements 20B, one or more secondary mounting bases 30, one or more second reflective components 40B, one or more protective elements 50, multiple wirings 60, and optical components 70.

[0248] (Light-emitting module 901)

[0249] In the light-emitting module 901, a first light-emitting device 6 and a second light-emitting device 7 are mounted on the wiring board 101. The first light-emitting device 6 includes one or more first semiconductor laser elements 20A and a first reflective component 40A, and the second light-emitting device 7 includes one or more second semiconductor laser elements 20B and a second reflective component 40B.

[0250] Even with this structure of the light-emitting module 901, it can achieve the same effect as the light-emitting device of the first to fifth embodiments. In addition, by preparing light-emitting devices with the first reflective component 40A and light-emitting devices with the second reflective component 40B separately, various supply methods such as light-emitting modules that coexist, light-emitting modules that do not coexist, and light-emitting device units can be flexibly provided as needed.

[0251] The various embodiments of the present invention have been described above, but the light-emitting device and light-emitting module of the present invention are not strictly limited to the light-emitting device or light-emitting module of each embodiment. That is, the present invention cannot be realized as long as it is not limited to the shape and structure of the light-emitting device or light-emitting module disclosed in each embodiment. The present invention does not necessarily have to have all the constituent elements to be applicable. For example, if a part of the constituent elements of the light-emitting device or light-emitting module disclosed in the embodiments is not described in the claims, the degree of design freedom of those skilled in the art, such as substitution, omission, shape modification, and material change, is recognized for that part of the constituent elements, and the invention described in the claims is determined to be applicable based on this.

[0252] Based on the content described herein, the following technical matters are disclosed.

[0253] (Item 1)

[0254] A light-emitting device comprising: a package; a plurality of semiconductor laser elements disposed within the internal space of the package, all having emission peak wavelengths within a first wavelength ±20 nm; and a plurality of reflective components having one or more first reflective components and one or more second reflective components disposed within the internal space of the package, the first reflective components having a first light-reflecting surface, the second reflective components having a second light-reflecting surface and a wavelength plate disposed above the second light-reflecting surface, the plurality of semiconductor laser elements including one or more first semiconductor laser elements and one or more second semiconductor laser elements, light emitted from the one or more first semiconductor laser elements being reflected by the first light-reflecting surface of the one or more first reflective components, light emitted from the one or more second semiconductor laser elements being reflected by the second light-reflecting surface of the one or more second reflective components, light incident on the first light-reflecting surface and light incident on the second light-reflecting surface having the same polarization direction, and light emitted from the first reflective component and light emitted from the second reflective component having different polarization directions.

[0255] (Item 2) The light-emitting device according to Item 1, wherein in the one or more first reflective components, no wavelength plate is provided on the first light-reflecting surface, and the wavelength plate disposed on the second light-reflecting surface of the one or more second reflective components is a 1 / 4 wavelength plate.

[0256] (Item 3) The light-emitting device according to item 1 or 2, wherein the plurality of reflective components are arranged in a first direction, and the plurality of semiconductor laser elements emit light in a direction perpendicular to the first direction when viewed from above.

[0257] (Item 4) The light-emitting device according to any one of items 1 to 3, wherein the thickness of the wavelength plate in the direction perpendicular to the second light-reflecting surface is 5 μm or less.

[0258] (Item 5) The light-emitting device according to any one of items 1 to 4, wherein the plurality of reflective elements are arranged in the first direction in such a manner that the first reflective element and the second reflective element are alternately arranged.

[0259] (Item 6) The light-emitting device according to any one of items 1 to 5, wherein the plurality of semiconductor laser elements emit divergent light from the light emitting surface, and the divergent light emitted from the plurality of semiconductor laser elements respectively irradiates the plurality of reflective components.

[0260] (Item 7) The light-emitting device according to Item 6, wherein the plurality of semiconductor laser elements respectively emit divergent light with a divergence angle of less than 40 degrees in the fast axis direction.

[0261] (Item 8) The light-emitting device according to any one of items 1 to 7, wherein, in the one or more second reflective members, the intensity of the portion of light irradiated to the upper end of the second light reflective surface as part of the light irradiated to the second light reflective surface is less than 15% of the peak intensity.

[0262] (Item 9) A light-emitting module comprising: a substrate; a first light-emitting device mounted on the substrate, having a first package, one or more first semiconductor laser elements disposed in the internal space of the first package and having a peak emission wavelength within a first wavelength ±20 nm, and one or more first reflective components disposed in the internal space of the first package and having a first light-reflecting surface; and a second light-emitting device mounted on the substrate, having a second package, one or more second semiconductor laser elements disposed in the internal space of the second package and having a peak emission wavelength within a first wavelength ±20 nm, and one or more second reflective components disposed in the internal space of the second package and having a second light-reflecting surface and a wavelength plate disposed on the second light-reflecting surface.

[0263] Industrial availability

[0264] The light-emitting device and light-emitting module described in the embodiments can be used in projectors. That is, a projector can be considered one application of the present invention. Furthermore, the present invention is not limited thereto and can be used in various applications such as lighting, exposure, vehicle headlights, head-mounted displays, and backlights for other displays.

[0265] Explanation of reference numerals in the attached figures

[0266] 1, 2, 3, 4, 5, 6, 7: Light-emitting devices

[0267] 10: Packaging

[0268] 11: Matrix

[0269] 11A: First upper surface

[0270] 11B: Lower surface

[0271] 11C: Second upper surface

[0272] 11D: Outer surface

[0273] 11E: Inner surface

[0274] 11F: Staircase

[0275] 11F1: First step

[0276] 11F2: Second Step

[0277] 11G: Upper surface

[0278] 11H: Side view

[0279] 11M: Base

[0280] 11N: Frame

[0281] 12A: Wiring section

[0282] 12A1: First wiring section

[0283] 12A2: Second wiring section

[0284] 13A: Joining pattern

[0285] 14: Cover

[0286] 14A: Upper surface

[0287] 14B: Lower surface

[0288] 14C: Side view

[0289] 20: Semiconductor laser components

[0290] 20A: First semiconductor laser element

[0291] 20B: Second semiconductor laser element

[0292] 21A: Upper surface

[0293] 21B: Lower surface

[0294] 21C: Side view

[0295] 22: Light exit surface

[0296] 30: Secondary mounting base

[0297] 31A: Upper surface

[0298] 31B: Lower surface

[0299] 31C: Side view

[0300] 32A: Substrate

[0301] 32B: Upper metal component

[0302] 32C: Lower metal component

[0303] 33: Wiring layer

[0304] 40: Reflective component

[0305] 40A: First reflective component

[0306] 40B: Second reflector

[0307] 41A: Lower surface

[0308] 41B: Light reflecting surface

[0309] 42: Wavelength plate

[0310] 42A: First page

[0311] 42B: Second side

[0312] 50: Protective components

[0313] 51A: Upper surface

[0314] 51B: Lower surface

[0315] 51C: Side View

[0316] 60: Wiring

[0317] 70: Optical components (lens components)

[0318] 71A: Upper surface

[0319] 71B: Lower surface

[0320] 71C: Side View

[0321] 71D: Lens surface (optical working surface)

[0322] 72A: Lens section

[0323] 72B: Non-lens section

[0324] 80: Partial polarization conversion component

[0325] 81: Polarization conversion region

[0326] 101: Wiring board

[0327] 201: Connector

[0328] 301: Thermistor

[0329] 901: Light-emitting module

Claims

1. A light-emitting device, characterized in that, have: Encapsulation; Multiple semiconductor laser elements are disposed within the internal space of the package, and the peak emission wavelengths of all of them are within ±20 nm of a first wavelength. A plurality of reflective components, each having one or more first reflective components and one or more second reflective components disposed within the internal space of the package, wherein the first reflective component has a first light-reflecting surface, and the second reflective component has a second light-reflecting surface and a wavelength plate disposed above the second light-reflecting surface. The plurality of semiconductor laser elements includes one or more first semiconductor laser elements and one or more second semiconductor laser elements. Light emitted from the one or more first semiconductor laser elements is reflected by the first light-reflecting surface of the one or more first reflective components. Light emitted from the one or more second semiconductor laser elements is reflected by the second light-reflecting surface of the one or more second reflective components. The light incident on the first light reflecting surface has the same polarization direction as the light incident on the second light reflecting surface. The light emitted from the first reflective component has a different polarization direction than the light emitted from the second reflective component.

2. The light-emitting device according to claim 1, characterized in that, In one or more of the first reflective components, no wavelength plate is provided on the first light-reflecting surface. The wavelength plate disposed on the second light-reflecting surface of the one or more second reflective components is a 1 / 4 wavelength plate.

3. The light-emitting device according to claim 1 or 2, characterized in that, The plurality of reflective components are arranged in a first direction. The plurality of semiconductor laser elements emit light in a direction perpendicular to the first direction when viewed from above.

4. The light-emitting device according to any one of claims 1 to 3, characterized in that, The thickness of the wavelength plate in the direction perpendicular to the second light-reflecting surface is less than 5 μm.

5. The light-emitting device according to any one of claims 1 to 4, characterized in that, The plurality of reflective elements are arranged in the first direction with the first reflective element and the second reflective element arranged alternately.

6. The light-emitting device according to any one of claims 1 to 5, characterized in that, The plurality of semiconductor laser elements emit scattered light from the light emitting surface. The divergent light emitted from the plurality of semiconductor laser elements respectively illuminates the plurality of reflective components.

7. The light-emitting device according to claim 6, characterized in that, The plurality of semiconductor laser elements respectively emit divergent light with a divergence angle of less than 40 degrees in the fast axis direction.

8. The light-emitting device according to any one of claims 1 to 7, characterized in that, In the one or more second reflective components, the intensity of the portion of light irradiating the upper end of the second light reflective surface, which is part of the light irradiated onto the second light reflective surface, is less than 15% of the peak intensity.

9. A light-emitting module, characterized in that, have: substrate; A first light-emitting device is mounted on the substrate and includes a first package, one or more first semiconductor laser elements disposed in the internal space of the first package and having a light emission peak wavelength within a first wavelength ±20nm, and one or more first reflective components disposed in the internal space of the first package and having a first light-reflecting surface. The second light-emitting device is mounted on the substrate and includes a second package, one or more second semiconductor laser elements disposed in the internal space of the second package and having a peak emission wavelength within ±20 nm of the first wavelength, and one or more second reflective components disposed in the internal space of the second package and having a second light-reflecting surface and a wavelength plate disposed on the second light-reflecting surface.

Images