Preparation method and system of electron spin separation orientation and hole mediation superconducting material

Abstract

The invention relates to the technical field of superconducting material preparation, and particularly discloses an electron spin separation orientation and hole mediation superconducting material preparation method and system, and the method comprises the steps: base material atomization and spin pre-separation, superconducting junction composite channel construction, spin orientation stabilization, hole mediation pairing, and high pressure regulation and control optimization when necessary. In the preparation process, a base material is atomized, spinning pre-separation is completed through a non-uniform magnetic field, then a constant external magnetic field is applied by adopting a heterojunction process, and a thin film is prepared in a substrate vacuum environment; reverse stability of electron spinning is maintained by utilizing a Zeeman coupling effect, and precise electron pairing is realized through hole mediation to form a superconducting structure. The material universality is extremely high, the process is stable and controllable, various base materials can break through superconduction critical conditions through precise regulation and control to achieve normal-temperature or near-normal-temperature superconduction, transmission scattering can be reduced through spin locking when the superconduction state is not achieved, the normal-state electric conduction and heat conduction performance is improved, and the material has research and development value and large-scale production and application prospects.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of superconducting material preparation, and particularly relates to an electronic spin separation orientation and hole-mediated superconducting material preparation method and system, and is especially suitable for the research and development and large-scale production of normal or near-normal temperature superconducting materials. BACKGROUND

[0002] Superconducting materials have irreplaceable application value in the fields of energy transmission, quantum computing, nuclear magnetic resonance imaging, etc. due to their zero resistance, complete diamagnetism and other performances. At present, whether in the laboratory research and development stage or in the process of popularization to practicality, normal or near-normal temperature superconducting materials are facing great challenges: the existing technical paths are mostly based on "material component doping", "macroscopic process parameter optimization" (such as high-temperature calcination, high-pressure forming) or "mesoscopic structure regulation" (such as grain orientation control), and the core logic still stays at improving material properties from the macroscopic / mesoscopic level, which fails to directly and accurately regulate the "electron spin pairing", the core mechanism of superconductivity, leading to the difficulty in breaking through the performance bottleneck in the laboratory and efficiently promoting the large-scale practical process.

[0003] The root cause of these technical difficulties is essentially due to two cognitive biases and theoretical limitations: one is the cognitive confusion of fermion properties - electrons (spin-up / spin-down) are essentially fermions, and according to the Pauli exclusion principle, a single fermion does not have superposition state characteristics, but its spin state is mistakenly judged as "superposition state that can be randomly converted"; the other is the limitation of traditional superconductivity theory (with BCS theory as the core) - based on the premise of "electrons cannot be divided", only "electron-phonon coupling" can explain low-temperature superconductivity, which cannot answer the question of "why negatively charged electrons can overcome repulsion to form Cooper pairs", and cannot clarify the transformation relationship between "fermions and bosons", leading to the difficulty of "unable to accurately lock the pairable electrons" in material development.

[0004] These two biases directly lead to: (1) performance improvement limitation: traditional methods rely on adjusting material composition or process conditions, and due to the long-term misunderstanding of electron spin as "superposition state", the important step of "directing and screening fermion state spin-up / spin-down electrons" is not applied, the superconducting critical temperature (Tc) has limited room for improvement, and most materials need ultra-low temperature / ultra-high pressure to superconduct; (2) low electron pairing efficiency: without the step of "locking the direction of electron spin magnetic moment of fermion state", the random distribution of spin-up and spin-down electrons (misled by the "superposition state" recognition) leads to low effective pairing probability, affecting the critical current density (Jc); (3) broken theoretical logic: it is not clear that "only when the spin-up electron and the spin-down electron of the fermion state form a coupled Cooper pair, can it be transformed into a boson with superposition state characteristics", leading to the complete separation of the development paths of different materials, and lacking a universal regulation framework. Therefore, a new type of universal superconducting material preparation method is urgently needed. SUMMARY

[0005] The purpose of this invention is to overcome the shortcomings of existing technologies and to design a method and system for preparing superconducting materials with electron spin separation orientation and hole-mediated conduction. It follows the core mechanism of "fermion to boson conversion" in the "electron-magnetic-universe theory" and achieves this through a fully controllable chain of "locking electron spin state → stabilizing spin direction → constructing hole layer mediation → facilitating precise pairing → forming initial boson". It is also universally applicable to various substrates and solves the fundamental problems of existing preparation methods such as "misjudging electron fermion properties and confusing the applicable scenarios of superposition states", "performance improvement is stuck in a bottleneck", and "material development requires targeted design and has extremely poor versatility".

[0006] To achieve the above objectives, the present invention employs the following technical solution: In a first aspect, the present invention provides a method for preparing a superconducting material with electron spin separation orientation and hole-mediated conductivity, specifically including the following steps: S1. Substrate atomization and spin pre-separation: First, the selected electron channel substrate and hole layer material are atomized separately, so that the atoms of the channel substrate detach from the surface to form atomic gas, and the hole layer material is simultaneously formed into atomic gas; then, the atomized channel substrate is subjected to spin pre-separation through a preset non-uniform magnetic field, thereby obtaining an upspin substrate enriched with upspin electrons and a downspin substrate enriched with downspin electrons respectively. S2. Constructing a spin-separated structure: Thin films are fabricated on a substrate in a vacuum environment using a heterojunction fabrication process; a constant external magnetic field with an intensity of 0.1-2T is continuously applied in the vertical direction of the thin film; a parallel independent composite channel system with a total number of superconducting junctions of 1-1 million pairs is grown by repeating units of upper spin substrate (forming upper spin channel) - hole-type intermediate layer - lower spin substrate (forming lower spin channel). Each superconducting junction consists of "one upper spin channel + one hole-type intermediate layer + one lower spin channel" or "one lower spin channel + one hole-type intermediate layer + one upper spin channel". When multiple layers are stacked, they are arranged in a natural alternation. The total number of superconducting junctions is adjusted according to the requirements of thin film thickness and carrier density. S3, Spin orientation stabilization: Utilizing the Zeeman coupling effect of the constant external magnetic field in step (2), the spin magnetic moment of the upper spin electron in the upper spin channel is aligned with the direction of the magnetic field, and the spin magnetic moment of the lower spin electron in the lower spin channel is opposite to the direction of the magnetic field, maintaining the two types of electrons in a spin-opposite stable state that can form a strong coupling Cooper pair. S4. Hole-mediated pairing: Strongly coupled Cooper pairs (bosons with superposition characteristics) are formed through the charge polarization effect of the hole-type interlayer. Based on the low free electron environment of the hole-type interlayer itself and the weak positive charge generated by charge polarization, it exerts a continuous attraction on the negatively charged newly formed strongly coupled Cooper pairs, thereby promoting the concentrated distribution of strongly coupled Cooper pairs in the hole-type interlayer and the interface region and forming Cooper pair aggregation regions, ultimately obtaining the initial superconducting material. S5. High-pressure control: If the initial superconducting material does not achieve the target performance (such as not achieving room temperature or near room temperature), apply an external pressure of 0.1-100 MPa (the pressure value is adjusted according to the material structure stability threshold to ensure that the composite channel system does not collapse). By reducing the electron center spacing, the attraction of the electron cells is enhanced, promoting the formation of more strongly coupled Cooper pairs (bosons), and finally achieving room temperature or near room temperature. During the high-pressure control process, since the electron spin is a fixed property of fermions, there is no need to worry about the pressure causing the spin state to change.

[0007] As a further technical solution of the present invention, in step S1: the electron channel substrate is selected from pure iron, stainless steel, copper alloy, metal oxide, semiconductor material or other solid material, and the electron channel substrate must contain at least one of iron, cobalt and nickel. If the substrate itself does not contain the above-mentioned ferromagnetic components, at least one of iron, cobalt and nickel with an atomic percentage of 1%-15% needs to be introduced by physical doping or chemical doping before atomization treatment; the hole-type intermediate layer material can be selected from semiconductor material, oxide material or other hole-type material. Preferably, a material with good compatibility is selected according to the channel substrate type of the upper and lower swirl films, combined with factors such as substrate composition and interface compatibility, including P-type doped alumina powder, P-type doped gallium nitride powder or other P-type doped metal oxide, with a doping concentration of 1×10⁻⁶. 15 -1×10 21 cm -3 The atomization process includes laser induction and magnetron sputtering. The non-uniform magnetic field is achieved through an asymmetric magnetic pole configuration with one end focusing magnetization and the other end dissipating magnetization. The focusing magnetic pole adopts a pointed structure (corresponding to the N pole), and the dissipating magnetic pole adopts a planar or arc-shaped structure (corresponding to the S pole). The two magnetic poles are arranged opposite each other. The base magnetic induction intensity of the non-uniform magnetic field is 0.1-2T, and the magnetic field intensity along the direction perpendicular to the particle motion is gradually distributed with a rate of change of not less than 10T / cm. The unpaired electron enrichment of both the upper and lower spin substrates is ≥80%.

[0008] As a further technical solution of the present invention, the heterojunction preparation process in step S2 is one of laser sputtering, magnetron sputtering, molecular beam epitaxy, chemical vapor deposition (CVD), and atomic layer deposition (ALD), and the vacuum pressure range corresponding to each process is ≤6×10 -3 Pa, 1×10-3 Pa-5×10 -1 Pa, 1×10 -7 Pa-1×10 -10 Pa, ≥1×10 -1 Pa and ≤1×10 -2 Pa; wherein chemical vapor deposition can be performed in low vacuum to atmospheric pressure environments as needed. Atmospheric pressure scenarios do not require complex vacuum equipment, while low pressure scenarios can balance accuracy and mass production requirements; and the specific vacuum pressure values ​​of the above-mentioned vacuum environments need to be further optimized and determined based on the equipment accuracy, substrate purity, and composite channel growth accuracy requirements of the selected process; the hole-type intermediate layer material is selected from semiconductor materials, oxide materials, or other hole-type materials, and has the triple functions of "charge polarization-mediated pairing", "physical isolation to prevent crosstalk" and "Cooper pair aggregation".

[0009] As a further technical solution of the present invention, the substrate in step S2 includes sapphire, MgO and SiC.

[0010] As a further technical solution of the present invention, the specific process of forming a strongly coupled Cooper pair in step S4 is as follows: First, relying on the physical structure and carrier characteristics of the hole-type intermediate layer, spatial isolation is formed on the adjacent upper and lower spin channels on both sides to block the cross-channel flow of upper and lower spin electrons; then, Coulomb attraction is applied to the adjacent upper and lower spin electrons on both sides to attract the two types of fermion state electrons to gather at the interface, so that the electron center distance is precisely reduced to < the diameter d of the outermost trajectory circle of the electron element, thereby generating a strongly coupled Cooper pair.

[0011] As a further technical solution of the present invention, in the initial superconducting material formed in step S4, the thickness of the upper and lower swirl channels is 4-200 atomic layers, and the thickness of the hole-type intermediate layer is 3-100 atomic layers.

[0012] Secondly, the present invention provides a superconducting material preparation system for electron spin separation orientation and hole-mediated transport, comprising an upspin atomic gas buffer and pressure stabilizing tank, a first upspin atomic gas distribution pipe, a first upspin atomic gas control solenoid valve, a first upspin channel target injection port, a first directional magnetic field, a non-uniform magnetic field, an upspin atomic gas collection pipe, an Nth upspin atomic gas distribution pipe (where N is a positive integer greater than or equal to 1), an Nth upspin atomic gas control solenoid valve, a first hole layer target injection port, a first substrate, a channel substrate vaporization generating unit, a channel substrate atomic gas transport pipeline, a hole layer material vaporization generating unit, and a hole layer material atomic gas transport system. Piping, hole layer material atomic gas buffer and stabilizing tank, first hole layer atomic gas distribution pipe, first hole layer atomic gas control solenoid valve, first downward spin channel target injection port, spin-controlled auxiliary laser, first downward spin atomic gas distribution pipe, Nth hole layer atomic gas distribution pipe, first downward spin atomic gas control solenoid valve, Nth hole layer atomic gas control solenoid valve, Nth upward spin channel target injection port, Nth directional magnetic field, downward spin atomic gas collection pipe, Nth hole layer target injection port, Nth substrate, downward spin atomic gas buffer and stabilizing tank, Nth downward spin atomic gas distribution pipe, Nth downward spin atomic gas control solenoid valve and Nth downward spin channel target The material injection port; the channel substrate gasification generating unit is connected to the non-uniform magnetic field through the channel substrate atomic gas delivery pipeline. A spin-state modulation auxiliary laser is positioned at the location of the non-uniform magnetic field to assist spin separation. The N-pole side of the non-uniform magnetic field is connected to an upper-spin atomic gas buffer and pressure stabilizing tank via an upper-spin atomic gas collection pipe, and the S-pole side is connected to a lower-spin atomic gas buffer and pressure stabilizing tank via a lower-spin atomic gas collection pipe. The output end of the upper-spin atomic gas buffer and pressure stabilizing tank is connected to a first upper-spin atomic gas distribution pipe and an Nth upper-spin atomic gas distribution pipe. The first and Nth upper-spin atomic gas distribution pipes are respectively equipped with a first upper-spin atomic gas control solenoid valve and an Nth upper-spin atomic gas control solenoid valve. The control solenoid valves are provided at the ends of the first and Nth upward-swirling atomic gas distribution pipes, respectively, with the first upward-swirling channel target injection port and the Nth upward-swirling channel target injection port. The output end of the downward-swirling atomic gas buffer pressure stabilizing tank is connected to the first and Nth downward-swirling atomic gas distribution pipes. The first and Nth downward-swirling atomic gas distribution pipes are respectively equipped with the first and Nth downward-swirling atomic gas control solenoid valves. The ends of the first and Nth downward-swirling atomic gas distribution pipes are respectively equipped with the first and Nth downward-swirling channel target injection ports.The cavity layer material vaporization generating unit is located between the upper-swirling atomic gas buffer and pressure stabilizing tank and the lower-swirling atomic gas buffer and pressure stabilizing tank. The cavity layer material vaporization generating unit is connected to the cavity layer material atomic gas buffer and pressure stabilizing tank via a cavity layer material atomic gas delivery pipeline. The output end of the cavity layer material atomic gas buffer and pressure stabilizing tank is connected to a first cavity layer atomic gas distribution pipe and an Nth cavity layer atomic gas distribution pipe. The first cavity layer atomic gas distribution pipe and the Nth cavity layer atomic gas distribution pipe are respectively equipped with a first cavity layer atomic gas control solenoid valve and an Nth cavity layer atomic gas control solenoid valve. The ends of the first and Nth hole layer atomic gas distribution tubes are respectively provided with the first hole layer target injection port and the Nth hole layer target injection port. The first upward spiral channel target injection port, the first hole layer target injection port, and the first downward spiral channel target injection port are positioned towards the first substrate, while the Nth upward spiral channel target injection port, the Nth hole layer target injection port, and the Nth downward spiral channel target injection port are positioned towards the Nth substrate. The first substrate is placed between the S and N poles of the first directional magnetic field, and the Nth substrate is placed between the S and N poles of the Nth directional magnetic field.

[0013] As a further technical solution of the present invention, the working process of the electron spin separation orientation and hole-mediated superconducting material preparation system is as follows: (1) After uniformly mixing the components of the upper and lower swirl membrane channel substrates, the mixture is fed into the channel substrate gasification generation unit. It is converted into a mixture of upper and lower swirl atomic gas by laser bombardment, ion bombardment, heating evaporation or chemical decomposition. The mixed atomic gas is directionally delivered to the non-uniform magnetic field region through the channel substrate atomic gas delivery pipeline. At the same time, the spin-state modulation auxiliary laser is activated to work with the non-uniform magnetic field to complete the spin-state screening and separation of gaseous raw materials. (2) The separated upward-swirling atomic gas is introduced into the upward-swirling atomic gas buffer and pressure stabilizing tank through the upward-swirling atomic gas collection pipe. A portion of the upward-swirling atomic gas in the buffer and pressure stabilizing tank is transported to the first upward-swirling channel target injection port through the first upward-swirling atomic gas distribution pipe and the first upward-swirling atomic gas control solenoid valve, and is injected into the first substrate according to the set timing to complete the upward-swirling film deposition. The other portion of the upward-swirling atomic gas is transported to the Nth upward-swirling channel target injection port through the Nth upward-swirling atomic gas distribution pipe and the Nth upward-swirling atomic gas control solenoid valve, and is injected into the Nth substrate according to the set timing. The downward-swirling atomic gas is transported to the Nth upward-swirling channel target injection port through the Nth upward-swirling atomic gas distribution pipe and the Nth upward-swirling atomic gas control solenoid valve, and is injected into the Nth substrate according to the set timing. The collection tube enters the downspin atomic gas buffer and stabilizing tank. A portion of the downspin atomic gas in the buffer and stabilizing tank is delivered to the first downspin channel target injection port through the first downspin atomic gas distribution pipe and the first downspin atomic gas control solenoid valve. It is then injected onto the first substrate according to the set timing sequence to complete the downspin film deposition. The other portion of the downspin atomic gas is delivered to the Nth downspin channel target injection port through the Nth downspin atomic gas distribution pipe and the Nth downspin atomic gas control solenoid valve. It is then injected onto the Nth substrate according to the set timing sequence. In this way, the deposition of upspin and downspin films is completed simultaneously on N substrates through N channels. (3) After uniformly mixing the components of the hole layer channel substrate, the mixture is fed into the hole layer material gasification generation unit and converted into hole layer atomic gas through laser bombardment, ion bombardment, heating evaporation or chemical decomposition. The hole layer atomic gas is introduced into the hole layer material atomic gas buffer and pressure stabilizing tank through the hole layer material atomic gas delivery pipeline for temporary storage and accumulation. A portion of the hole layer atomic gas is delivered to the first hole layer target injection port through the first hole layer atomic gas distribution pipe and the first hole layer atomic gas control solenoid valve, and is injected into the first substrate (deposited between the upper and lower swirl films) according to the preset rate, direction and time sequence. At the same time, another portion of the hole layer atomic gas is delivered to the Nth hole layer target injection port through the Nth hole layer atomic gas distribution pipe and the Nth hole layer atomic gas control solenoid valve, and is injected into the Nth substrate (deposited between the upper and lower swirl films) according to the set time sequence, thus completing the hole layer deposition on the Nth substrate.

[0014] This invention utilizes the charge polarization effect of a pre-defined hole-type intermediate layer in a composite channel system. Firstly, relying on the physical structure and carrier characteristics of the hole-type intermediate layer, it spatially isolates the adjacent upper and lower spin channels, blocking cross-channel flow between upper and lower spin electrons and preventing electron mixing before pairing. Then, it applies Coulomb attraction to the upper and lower spin electrons within the two channels respectively, drawing both types of fermion-state electrons towards the hole-type intermediate layer interface. This precisely reduces the center-to-center distance between the upper and lower spin electrons to a critical threshold "less than the diameter d of the outermost orbital loop of the electric element" in the "electric-magnetic-element universe theory," thus promoting the aggregation of both types of fermions. The formation of strongly coupled Cooper pairs—simultaneously, the hole-type intermediate layer, due to its own low free electron environment and the weak positive charge generated by charge polarization, exerts a continuous attraction on the newly formed strongly coupled Cooper pairs, causing them to concentrate and distribute within the hole-type intermediate layer and the interface region, naturally forming Cooper pair aggregation regions; at this time, Cooper pairs are transformed into bosons with superposition state characteristics, forming a transformation process of "spinning electron (fermion) - hole - spinning electron (fermion) → Cooper pair (boson)", obtaining the initial superconducting material; among them, the thickness of the spinning channel and the spinning channel is 4-200 atomic layers, and the thickness of the hole-type intermediate layer is 3-100 atomic layers. The layered structure design, together with the hole-mediated pairing process, constitutes the core of the entire process. It precisely controls the key conditions for "fermion pairing to convert into bosons". It solves the pairing disorder caused by "electron cross-layer cross-flow" in traditional processes through isolation, and builds the "superconducting core region" where Cooper pairs exist stably in advance through aggregation. This lays the foundation for subsequent bandgap improvement and room temperature stability, and completely solves the problem of "low pairing efficiency caused by misjudging superposition state" in traditional processes.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: (1) Disruptive innovation in R&D logic: Breaking through the dilemma of blind trial and error caused by the ambiguity of mechanism understanding in the field of superconductivity for nearly a century - existing technologies can only advance through fragmented trial and error by changing materials and adjusting process parameters because they have not clarified the fermion-boson conversion law of electrons, and lack a unified R&D framework; this invention is based on the intrinsic mechanism that electrons have superposition state characteristics only when the fermion spin is fixed and coupled to form bosons. It constructs a system design logic of locking spin → regulating pairing → optimizing performance. It can reduce the random interference in the pairing process by accurately locking the fermion spin state of upspin / downspin electrons, greatly improve the pairing success rate of directional free electrons, upgrade superconductivity R&D from blind trial and error to precise design based on mechanism, and completely break the bottleneck of technological breakthrough for a century.

[0016] (2) Dual breakthroughs in cognition and technology: For the first time, it is clearly stated that the spin-up / spin-down electrons of fermions have no superposition state characteristics, and only when they are coupled to form Cooper pairs do they transform into bosons with superposition state characteristics, correcting the traditional cognitive bias; the process flow is designed by locking the spin of fermion state electrons and precisely controlling the boson formation process, avoiding the problem in traditional technology where only a few specific electrons can be paired due to the lack of clear laws on electron state transformation, and can specifically guide the outer-shell oriented free electrons to complete the fermion → boson transformation, greatly improving the pairing success rate, breaking through long-term theoretical misconceptions, providing a new technical path for room temperature or near room temperature, and the core theoretical basis has been disclosed through multiple channels such as invention patents, academic monographs, and international preprint platforms, with a solid theoretical foundation.

[0017] (3) The material is highly versatile and compatible with a variety of solid substrates (including but not limited to existing superconducting materials), such as pure iron, stainless steel, oxides, copper-based materials, and semiconductor materials. It does not require the design of special processes for different substrates. Its core logic is that the fermion → boson conversion rule is universal. Electrons in all substrates follow the same spin-locking-pairing coupling logic. Under the unified conversion rule, the directional free electrons in different substrates can achieve stable coupling conversion through standardized spin locking and pairing control, which greatly improves the consistency of the success rate of electron pairing across substrates. There is only one basic requirement for the substrate, that is, it must contain at least one of iron, cobalt, and nickel. If the substrate itself does not contain the above ferromagnetic components, at least one of iron, cobalt, and nickel with an atomic percentage of 1%-15% can be introduced through physical or chemical doping before subsequent steps. If it already contains sufficient components, it can directly enter the process flow. This feature can greatly shorten the adaptation cycle of new superconducting materials and reduce the R&D and large-scale production costs.

[0018] (4) Stable and highly controllable process: The core process parameters (1-1,000,000 superconducting junctions in the composite channel, 4-200 atomic layers of the up-spin / down-spin channel thickness, 3-100 atomic layers of the hole layer thickness, a non-uniform magnetic field with spin separation as the base magnetic induction intensity of 0.1-2T and a change rate of not less than 10T / cm along the direction perpendicular to the particle motion, and optional high-voltage control values ​​of 0.1MPa-100MPa) can be flexibly adjusted according to performance requirements; Since electrons are fermions with fixed spin states, there is no need to design additional complex control links to prevent spin switching, reducing process redundancy and significantly improving stability; High-voltage control is an optional step, which can meet the needs of small-batch research and development in the laboratory and can also be adapted to industrial continuous production scenarios.

[0019] (5) Significant advantages in superconducting performance: By precisely locking the spin type and spin direction of fermion state electrons and guiding the active aggregation of directional upspin / downspin electrons, the electron spacing is reduced to promote boson conversion, completely avoiding the randomness of Cooper pair formation caused by the misconception of superposition state, and the pairing efficiency is significantly improved compared with the existing technology; combined with optional high-voltage control, it can achieve room temperature or near room temperature, and the core performance indicators such as critical current density (Jc) and critical temperature (Tc) are all superior to the existing technology. The essence of the performance improvement is to shift from blind trial and error based on the erroneous property cognition to precise control based on the law of fermion-boson conversion, so as to achieve a deterministic improvement in superconducting performance.

[0020] (6) Triple functional advantages of the core structure: As the core of the process, the hole-type intermediate layer breaks through the traditional single or dual function design and constructs a three-dimensional collaborative guarantee mechanism of "mediation + isolation + aggregation". On the one hand, as the pairing mediating core, it accurately pulls the upper and lower spin electrons to aggregate and couple through the charge polarization effect, providing key structural support for the "efficient conversion of fermions to bosons" and solving the problem of low pairing efficiency in traditional processes. On the other hand, it plays the role of isolation and protection barrier, physically blocking the crosstalk of electrons between the upper and lower spin electron layers, and stabilizes the system state with its insulation-like properties, avoiding damage to the pairing environment due to electron mixing. At the same time, the function of Cooper pair aggregation region is added. Relying on its own low free electron environment and weak positive charge, it forms a continuous attraction to the newly formed strong coupled Cooper pairs, making them concentrated to form a superconducting core region. This not only improves the collective coherence of Cooper pairs to increase the band gap, but also reduces the dissociation loss of Cooper pairs to enhance room temperature stability. Finally, it simultaneously strengthens the process reliability from three dimensions: conversion efficiency, structural stability, band gap improvement and durability. Compared with traditional structures, it achieves a dual breakthrough in function and performance, further amplifying the overall technical advantages.

[0021] (7) Advantages of superconductivity in all substrates: It can achieve a dual upgrade of superconductivity and basic performance for all compatible substrates (including semiconductor materials). It can not only enable various substrates such as semiconductors to break through the superconducting critical conditions and achieve room temperature or near-room temperature superconductivity through precise control; even in application scenarios that have not reached the superconducting state, it can reduce transmission scattering through electron spin locking and simultaneously improve the normal conductivity and thermal conductivity of the substrate, completely breaking the limitation that "only specific materials can be superconducting". It not only opens up new application directions for semiconductor and other substrates at room temperature or near-room temperature, but also provides a performance upgrade path for them in conventional electronic fields (such as chip heat dissipation and high-efficiency conductivity), realizing the dual value of superconducting research and development and the improvement of conventional materials.

[0022] (8) Excellent adaptability to industrial mass production: It can add auxiliary systems such as "atomic gas buffer and pressure stabilization unit" and "pipeline anti-blocking protection unit", which can effectively solve problems such as atomic gas flow fluctuation and pipeline blockage in large-scale production and ensure the stability of continuous production; at the same time, it is compatible with laser sputtering process, magnetron sputtering process, molecular beam epitaxy process, chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process or other mature heterojunction preparation processes. There is no need to reconstruct production equipment, which greatly reduces the threshold for industrialization and provides hardware support for the large-scale transformation of all substrates and superconducting performance advantages, ensuring that the technology moves from the laboratory to industrial application.

[0023] (9) In specific implementation, in addition to the heterojunction preparation process, the present invention can also adopt two process paths: nanoparticle stacking and liquid substrate film formation. These three process paths can be flexibly selected according to the application scenario. On the one hand, it breaks through the limitations of a single preparation method and provides more flexible choices for different research directions (such as precise control of heterojunctions, spin optimization of particle systems, and large-scale liquid film formation) and application scenarios (such as high-end precision devices, large-area flexible substrates, and low-cost mass production components). On the other hand, both processes adopt easy-to-operate core steps such as layered stacking and coating / spraying. Combined with the differentiated treatment scheme of ferromagnetic / non-ferromagnetic substrates compatible with the heterojunction process, while ensuring the stability of electron spin orientation, it can support scientific research breakthroughs in related processes (such as particle spin control and liquid system film formation mechanism), and reduce equipment dependence and mass production costs, realizing the technical value of multi-path collaborative research and multi-scenario adaptation and application. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the structure of a superconducting material preparation system provided by the present invention, which involves electron spin separation orientation and hole-mediated superconductivity.

[0025] Figure 2 This is a schematic diagram of the structure and cyclic deposition of the superconducting material prepared in this invention.

[0026] Figure 3 This is a schematic diagram illustrating the vector relationship of the strong coupling Cooper pairs (bosons) formed by the convergence of up-spin / down-spin electrons (fermions) in the hole layer in this invention. Detailed Implementation

[0027] The present invention will be further described below with reference to the embodiments and accompanying drawings.

[0028] This embodiment can simultaneously improve the conductivity and superconductivity of the substrate through systematic optimization of all chain parameters. It can meet the performance upgrade needs of existing superconducting materials and support the development of novel superconducting materials, ultimately providing a feasible technical path for the preparation of true room-temperature or near-room-temperature superconducting materials. It should be noted that, to ensure the stable retention of the electron spin direction after the removal of the external magnetic field during the "directional locking" process, this embodiment requires the substrate to contain at least one of iron, cobalt, and nickel. If the substrate itself does not contain the aforementioned ferromagnetic components, at least one of iron, cobalt, and nickel must be introduced at an atomic percentage of 1%-15% through physical or chemical doping before subsequent steps. If the substrate already contains sufficient ferromagnetic components, it can directly proceed to the following process flow, which includes the following steps: S1. Substrate atomization and spin pre-separation: This step is used to lock the spin state of fermionic electrons. It employs a non-uniform magnetic field separation technique based on the Stern-Glach experiment (a classic experiment that confirmed electron spin in 1922), and introduces laser assistance. By selecting a laser wavelength that matches the electron energy level (specifically adapted to the electron binding energy in the substrate), the laser photon energy is used to excite the surface electrons of the substrate, reducing the binding effect between the electrons and the substrate lattice and minimizing electron energy loss during the separation process. At the same time, the magnetic field change rate is adjusted to match the type of channel substrate. The two work together to accurately separate the spin-up and spin-down electrons of the fermionic state from the substrate. Since both types of electrons are fermions, their spin is an intrinsic property that is fixed throughout their lives and has no superposition state. After separation, there is no need to worry about their spin state changing, further ensuring the integrity and purity of the separated electrons, which complements the high separation ratio of the Stern-Glach experiment itself.

[0029] The selected electron channel substrate (which must meet the basic requirement of containing or having introduced iron, cobalt, or nickel-iron magnetic components) and the hole layer material are atomized separately (the two can be simultaneously achieved through the same or compatible processes such as laser induction or magnetron sputtering). This causes the atoms of the channel substrate to detach from the surface and form atomic gas, while the hole layer material simultaneously forms atomic gas (the hole layer material only needs atomization and is temporarily stored for later use, without spin separation). The atomized channel substrate is then subjected to a pre-set non-uniform magnetic field (achieved using an asymmetric magnetic pole configuration of "one end focusing magnetization and one end dispersing magnetization": the magnetic field generating device includes a "focusing magnetization pole" with a very small radius of curvature (such as a tip structure, which can be set as the N pole) and a "dispersing magnetization pole" with a significantly larger radius of curvature (such as a planar or arc-shaped structure, corresponding to the S pole), with the two magnetic poles arranged opposite each other to form a gradual change in magnetic field strength along the direction perpendicular to the particle motion path) for spin pre-separation, thereby obtaining an upspin substrate enriched with upspin electrons and a downspin substrate enriched with downspin electrons.

[0030] The non-uniform magnetic field strength is controlled within the range of 0.1-2T. This is the magnetic induction intensity of the magnetic field substrate, i.e. the intensity in the region between the two magnetic poles. The specific value is optimized and adjusted according to the substrate type. The rate of change of the magnetic field strength along the direction perpendicular to the particle motion is not less than 10T / cm. This ensures that the enrichment of unpaired electrons in the upper-spin substrate and the enrichment of unpaired electrons in the lower-spin substrate are both ≥80%. This enrichment is the effective threshold for achieving the superconducting effect. The higher the enrichment, the better the intensity of the superconducting effect and related properties (such as critical temperature and critical current).

[0031] The core of this step is to lock the unpaired electrons of the pairable fermion state, while simultaneously completing the atomic-level preparation of the hole layer raw materials, laying a crucial foundation for the subsequent conversion of fermions into bosons.

[0032] S2 constructs a spin-separated structure: Spin-separated structures are constructed by synchronously applying a constant external magnetic field. Specifically, heterojunction fabrication processes are employed (laser sputtering, magnetron sputtering, molecular beam epitaxy, chemical vapor deposition (CVD), atomic layer deposition (ALD), or other mature heterojunction fabrication processes can be used, selected based on substrate characteristics and channel fabrication precision requirements). All fabrication processes must be carried out in a vacuum environment suitable for the corresponding process requirements. Molecular beam epitaxy (MBE): requires an ultra-high vacuum environment, with a vacuum level of 1×10⁻⁶. -7 Pa - 1×10 -10 Pa; Laser sputtering (pulsed laser deposition) process: requires a high vacuum environment, with a vacuum level ≤ 6 × 10⁻⁶. -3 Pa, the ultimate vacuum can reach 2 × 10⁻⁶ Pa. -6 Pa; Magnetron sputtering process: requires a high vacuum environment, with a vacuum level of 1×10⁻⁶. -3 Pa - 5×10 -1 Pa; Atomic layer deposition (ALD) process: requires a high vacuum environment, with a vacuum level ≤ 1 × 10⁻⁶. -2 Pa; Chemical vapor deposition (CVD) process: Vacuum requirements are relatively relaxed, only ≥1×10 -1 Pa (low vacuum to atmospheric pressure environments can be selected according to requirements. Atmospheric pressure scenarios do not require complex vacuum equipment, while low pressure scenarios can balance accuracy and mass production requirements).

[0033] The purpose of using a vacuum environment is to remove air and prevent impurities such as oxygen and water vapor in the air from interfering with the electron spin state and the atomic-level growth precision of the composite channel, thus ensuring the purity and stability of the structure preparation.

[0034] In this embodiment, the heterojunction fabrication process requires a substrate as a support. This substrate serves as a necessary carrier and lattice guiding layer for the growth of the composite channel system. The specific material can be selected based on the superconducting layer's lattice matching and mechanical strength requirements, such as sapphire, MgO, or SiC. Its core function is to ensure that the repeating units of "upper spin substrate - hole-type intermediate layer - lower spin substrate" can be formed into films according to the preset crystal orientation and structural precision. Whether or not the substrate is retained in the final product can be flexibly chosen based on actual application requirements: if maintaining the mechanical stability of the composite channel system is required (such as in multilayer integrated devices or rigid packaging scenarios), the substrate can be directly retained; if lightweight, flexible packaging, or specific heat dissipation requirements are needed, a sacrificial layer (such as an oxide transition layer or a metal stripping layer) can be pre-prepared between the substrate and the composite channel system. After this step is completed, the sacrificial layer and substrate are removed by chemical etching or physical stripping processes, leaving only the spin-separated composite channel body. Neither treatment method affects the superconducting performance or spin-separation function of the composite channel system.

[0035] During film formation, a constant external magnetic field with an intensity of 0.1-2T (the specific value is optimized and adjusted according to the substrate type) is continuously applied in the direction perpendicular to the film (perpendicular to the composite channel to be formed); at the same time, a composite channel system is grown on the substrate according to the repeating unit structure of "upward spin substrate (forming an upward spin channel enriched with fermion-state upward spin electrons) - hole-type intermediate layer - downward spin substrate (forming a downward spin channel enriched with fermion-state downward spin electrons)"; the total number of superconducting junctions in the composite channel system is 1-1,000,000 pairs (the specific number is set according to the performance requirements of the superconducting material, at least 1 pair is sufficient to meet the basic superconducting effect), and finally a parallel and independent composite channel system is formed. The core of this structural design is to spatially isolate the two types of fermion-state electrons to prevent electrons with the same spin from being unable to approach due to magnetic repulsion, while reserving the interaction space for subsequent adjustment of the spacing and promoting pairing through the hole-type intermediate layer.

[0036] S3, Spin-oriented stabilization: This step is used to ensure the fermion pairing conditions. Utilizing the Zeeman coupling effect of the constant external magnetic field continuously applied in step S2, the spin magnetic moments of the fermion-state electrons enriched in the upper spin channel are aligned with the direction of the magnetic field, while the spin magnetic moments of the fermion-state electrons enriched in the lower spin channel are opposite to the direction of the magnetic field. Since the electrons are fermions and have fixed spins, this step does not require maintaining spin non-conversion, but only stabilizing their spatial orientation to ensure that the two types of electrons are always in a spin-opposite state that can form a strong coupling Cooper pair, thus avoiding pairing failure due to orientation disorder.

[0037] S4. Achieve hole-mediated pairing: This step is used to promote the fermion-to-boson conversion. Through the charge polarization effect of the pre-defined hole-type intermediate layer in the composite channel system, firstly, relying on the physical structure and carrier characteristics of the hole-type intermediate layer, spatial isolation is formed between the adjacent upper and lower spin channels, blocking the cross-channel flow of upper and lower spin electrons and preventing electron mixing before pairing. Then, Coulomb attraction is applied to the upper and lower spin electrons in the two channels respectively, attracting the two types of fermion electrons to gather at the hole-type intermediate layer interface. This precisely reduces the center-to-center distance between the upper and lower spin electrons to the critical threshold "less than the diameter d of the outermost orbital loop of the electric element" in the "electric element-magnetic element universe theory," prompting the two types of fermions to form a strongly coupled Cooper pair. Simultaneously, the hole-type intermediate layer, due to its low-freedom electron environment and charge polarization, produces... The weak positive charge of the newly formed Cooper pairs exerts a continuous gravitational pull on them, causing them to concentrate in the hole-type intermediate layer and interface region, naturally forming Cooper pair aggregation regions. At this point, the Cooper pairs transform into bosons with superposition characteristics, forming a transformation process of "spinning electron (fermion) - hole - spinning electron (fermion) → Cooper pair (boson)", resulting in the initial superconducting material. This step is the core of the entire process, precisely controlling the key conditions for fermion pairing to transform into bosons. It solves the pairing disorder caused by electron cross-layer crossflow in traditional processes through isolation, and also constructs a superconducting core region with stable Cooper pairs in advance through aggregation, laying the foundation for subsequent bandgap improvement and room temperature stability, and completely solving the problem of low pairing efficiency caused by misjudging the superposition state in traditional processes.

[0038] S5, High Voltage Regulation: This step is selected according to actual needs to optimize the boson formation channel and achieve room temperature, near-room temperature, or superconductivity. If the initial superconducting material obtained in step 4 does not achieve the target superconducting performance (such as failing to achieve room temperature or near-room temperature superconductivity), an external pressure of 0.1MPa-100MPa is applied to it. The specific pressure value needs to be adjusted according to the structural stability threshold of the initial superconducting material to ensure that the composite channel system does not collapse. High pressure can further reduce the relative spacing between fermion electrons, enhance the attraction of electrons, and promote the formation of more strongly coupled Cooper pairs (bosons). Since electrons are fermions and have fixed spins, there is no need to worry about pressure causing spin transformation. Finally, the superconducting performance is further optimized through high pressure to achieve room temperature or near-room temperature effects.

[0039] like Figure 1 As shown, corresponding to the above preparation steps, this embodiment also provides a system for preparing superconducting materials with electron spin separation orientation and hole-mediated transmission, including: 1. Upward-swirling atomic gas buffer and pressure stabilizing tank; 2. First upward-swirling atomic gas distribution pipe; 3. First upward-swirling atomic gas control solenoid valve; 4. First upward-swirling channel target injection port; 5. First directional magnetic field; 6. Non-uniform magnetic field; 7. Upward-swirling atomic gas collection pipe; 8. Nth upward-swirling atomic gas distribution pipe (where N is a positive integer greater than or equal to 1); 9. Nth upward-swirling atomic gas control solenoid valve; 10. First hole layer target injection port; 11. First substrate; 12. Channel substrate gasification generating unit; 13. Channel substrate atomic gas delivery pipeline; 14. Hollow layer material gasification generating unit; 15. Hollow layer material atomic gas buffer and pressure stabilizing tank; 16. First hole layer atomic gas distribution pipe; 17. The system includes: 18, first hole-layer atomic gas control solenoid valve; 19, first downward-spinning channel target injection port; 20, spin-controlled auxiliary laser; 21, first downward-spinning atomic gas distribution pipe; 22, Nth hole-layer atomic gas distribution pipe; 23, first downward-spinning atomic gas control solenoid valve; 24, Nth hole-layer atomic gas control solenoid valve; 25, Nth upward-spinning channel target injection port; 26, Nth directional magnetic field; 27, downward-spinning atomic gas collection pipe; 28, Nth hole-layer target injection port; Nth substrate; 29, downward-spinning atomic gas buffer and pressure stabilizing tank; 30, Nth downward-spinning atomic gas distribution pipe; 31, Nth downward-spinning atomic gas control solenoid valve; and Nth downward-spinning channel target injection port; and channel substrate vaporization generation unit. 12 is connected to the non-uniform magnetic field 6 via the channel substrate atomic gas delivery pipe 13. The spin-state modulation auxiliary laser 20 is set at the position of the non-uniform magnetic field 6 to assist spin separation. The N pole side of the non-uniform magnetic field 6 is connected to the upper spin atomic gas buffer and pressure stabilizing tank 1 via the upper spin atomic gas collection pipe 7, and the S pole side is connected to the lower spin atomic gas buffer and pressure stabilizing tank 30 via the lower spin atomic gas collection pipe 27. The output end of the upper spin atomic gas buffer and pressure stabilizing tank 1 is connected to the first upper spin atomic gas distribution pipe 2 and the Nth upper spin atomic gas distribution pipe 8. The first upper spin atomic gas distribution pipe 2 and the Nth upper spin atomic gas distribution pipe 8 are respectively equipped with the first upper spin atomic gas control solenoid valve 3 and the Nth upper spin atomic gas control solenoid valve 9. The ends of the swirling atomic gas distribution pipe 2 and the Nth swirling atomic gas distribution pipe 8 are respectively provided with the first swirling channel target injection port 4 and the Nth swirling channel target injection port 25; the output end of the swirling atomic gas buffer pressure stabilizing tank 30 is connected to the first swirling atomic gas distribution pipe 21 and the Nth swirling atomic gas distribution pipe 31, the first swirling atomic gas control solenoid valve 23 and the Nth swirling atomic gas control solenoid valve 32 are respectively provided on the first swirling atomic gas distribution pipe 21 and the Nth swirling atomic gas distribution pipe 31, and the ends of the first swirling atomic gas distribution pipe 21 and the Nth swirling atomic gas distribution pipe 31 are respectively provided with the first swirling channel target injection port 19 and the Nth swirling channel target injection port 33;A cavity layer material vaporization generating unit 14 is positioned between an upper-swirling atomic gas buffer and stabilizing tank 1 and a lower-swirling atomic gas buffer and stabilizing tank 30. The cavity layer material vaporization generating unit 14 is connected to a cavity layer material atomic gas buffer and stabilizing tank 16 via a cavity layer material atomic gas delivery pipeline 15. The output end of the cavity layer material atomic gas buffer and stabilizing tank 16 is connected to a first cavity layer atomic gas distribution pipe 17 and an Nth cavity layer atomic gas distribution pipe 22. The first cavity layer atomic gas distribution pipe 17 and the Nth cavity layer atomic gas distribution pipe 22 are respectively equipped with a first cavity layer atomic gas control solenoid valve 18 and an Nth cavity layer atomic gas control solenoid valve 24. The first cavity layer atomic gas distribution pipe... The ends of the 17th and Nth hole layer atomic gas distribution pipes 22 are respectively provided with the first hole layer target injection port 10 and the Nth hole layer target injection port 28. The first upward spiral channel target injection port 4, the first hole layer target injection port 10, and the first downward spiral channel target injection port 19 are arranged towards the first substrate 11. The Nth upward spiral channel target injection port 25, the Nth hole layer target injection port 28, and the Nth downward spiral channel target injection port 33 are arranged towards the Nth substrate 29. The first substrate 11 is placed between the S pole and the N pole of the first directional magnetic field 5, and the Nth substrate 29 is placed between the S pole and the N pole of the Nth directional magnetic field 26. The specific working process is as follows: (1) After uniformly mixing the components of the upper and lower swirl membrane channel substrates, the mixture is fed into the channel substrate gasification generating unit 12. It is converted into a mixed atomic gas of upper and lower swirl through laser bombardment, ion bombardment, heating evaporation or chemical decomposition. The mixed atomic gas is directed to the action area of ​​the non-uniform magnetic field 6 through the channel substrate atomic gas delivery pipeline 13. At the same time, the spin state modulation auxiliary laser 20 is activated to work with the non-uniform magnetic field 6 to complete the spin state screening and separation of the gaseous raw materials. (2) The separated upward-swirling atomic gas is introduced into the upward-swirling atomic gas buffer and pressure-stabilizing tank 1 through the upward-swirling atomic gas collection pipe 7. A portion of the upward-swirling atomic gas in the upward-swirling atomic gas buffer and pressure-stabilizing tank 1 is transported to the first upward-swirling channel target injection port 4 through the first upward-swirling atomic gas distribution pipe 2 and the first upward-swirling atomic gas control solenoid valve 3, and injected into the first substrate 11 according to the set timing to complete the upward-swirling film deposition. The other portion of the upward-swirling atomic gas is transported to the Nth upward-swirling channel target injection port 25 through the Nth upward-swirling atomic gas distribution pipe 8 and the Nth upward-swirling atomic gas control solenoid valve 9, and injected into the Nth substrate 29 according to the set timing. The downward-swirling atomic gas is collected through the downward-swirling atomic gas collection pipe 2. 7. The gas enters the downspin atomic gas buffer and stabilizing tank 30. A portion of the downspin atomic gas in the downspin atomic gas buffer and stabilizing tank 30 is delivered to the first downspin atomic gas injection port 19 through the first downspin atomic gas distribution pipe 21 and the first downspin atomic gas control solenoid valve 23. It is then injected into the first substrate 11 according to the set timing to complete the downspin film deposition. Another portion of the downspin atomic gas is delivered to the Nth downspin atomic gas injection port 33 through the Nth downspin atomic gas distribution pipe 31 and the Nth downspin atomic gas control solenoid valve 32. It is then injected into the Nth substrate 29 according to the set timing. In this way, the deposition of the upspin film and the downspin film is completed simultaneously on N substrates through N channels. (3) After uniformly mixing the components of the hole layer channel substrate, the mixture is fed into the hole layer material gasification generating unit 14 and converted into hole layer atomic gas by laser bombardment, ion bombardment, heating evaporation or chemical decomposition. The hole layer atomic gas is introduced into the hole layer material atomic gas buffer and pressure stabilizing tank 16 through the hole layer material atomic gas delivery pipeline 15 for temporary storage and accumulation. A portion of the hole layer atomic gas is delivered to the first hole layer target injection port 10 through the first hole layer atomic gas distribution pipe 17 and the first hole layer atomic gas control solenoid valve 18 and injected into the first substrate 11 (deposited between the upper and lower swirl films) according to the preset rate, direction and time sequence. At the same time, another portion of the hole layer atomic gas is delivered to the Nth hole layer target injection port 28 through the Nth hole layer atomic gas distribution pipe 22 and the Nth hole layer atomic gas control solenoid valve 24 and injected into the Nth substrate 29 (deposited between the upper and lower swirl films) according to the set time sequence, thus completing the hole layer deposition of the Nth substrate 29.

[0040] Specifically, a superconducting material preparation system based on electron spin separation and hole-mediated processes also includes auxiliary units to ensure the stability and continuity of large-scale mass production. Firstly, it upgrades the atomic gas buffer and pressure stabilization function by adding a pressure and temperature control system module to the existing buffer and pressure stabilization tank between the material vaporization unit and the atomic gas control solenoid valve. When spraying stops, the vaporization unit is kept at low power and kept warm, while a small amount of gaseous raw material is temporarily stored in the existing pressure stabilization tank. Before the next spray, energy is quickly replenished and parameters adjusted via pressure feedback to avoid atomic gas flow fluctuations caused by frequent start-stop cycles of the vaporization unit. Secondly, it adds a pipeline anti-blockage protection unit: a heat-tracing and insulation layer (maintaining the temperature above the raw material condensation threshold) is installed on the atomic gas delivery pipeline, the spray nozzle, and the outer layer of the pressure stabilization tank, and an inert gas purging valve is added at the end of the pipeline. After spraying stops, residual atomic gas is purged with nitrogen or argon to prevent condensation and blockage in the pipeline, ensuring the purity and flow rate of the raw material for the next spray.

[0041] This embodiment transforms the theoretical principle of "fermion to boson conversion" into a feasible superconducting material preparation scheme through "step-by-step process control + systematic device design". It clarifies the technical details of the entire process from atomic gas processing to superconducting structure formation, and solves the technical pain points of poor material compatibility, low pairing efficiency and difficulty in mass production in traditional processes. It can fully support the technical needs of superconducting materials from laboratory research and development to large-scale production.

[0042] This embodiment is based on the "Electron-Magnetic Universe Theory," adhering to two core principles: the spin of up-spin / down-spin electrons (fermions) is fixed indefinitely, and only the Cooper pairs (bosons) formed by coupling possess a superposition state; the composition and spacing threshold of the electron's internal electron-magnetic elements directly determine whether electrons can effectively pair. Through a fully controllable chain of "spin separation - directional locking - hole layer mediation - precise electron pairing," a closed loop is achieved from precise control of microscopic electronic states to breakthroughs in macroscopic superconducting performance. The basis for "directional locking" is that the substrate must contain at least one of iron, cobalt, and nickel (substrates containing sufficient ferromagnetic components can be used directly; non-ferromagnetic substrates require the introduction of 1%-15% of iron, cobalt, or nickel during the preparation process). Through the strong magnetic moments and interatomic magnetic exchange of ferromagnetic elements, it is ensured that after the electron spin is oriented, the spin orientation can still be stably retained when the external magnetic field is removed, providing a prerequisite for subsequent precise electron pairing.

[0043] This embodiment demonstrates the ability to indiscriminately enhance various substrates. Regardless of whether the substrate already possesses superconductivity, its conductivity and superconductivity properties can be simultaneously optimized using this method. This approach can both target and upgrade the performance limits of existing superconducting materials and develop novel superconducting materials based on any substrate (containing iron, cobalt, or nickel, or having been treated to introduce iron, cobalt, or nickel). Ultimately, through systematic and comprehensive optimization and screening, it provides a deterministic path for the development of true room-temperature or near-room-temperature materials, completely breaking the limitation of "one material, one process" in the development of existing superconducting materials, and driving the field of superconductivity to achieve a fundamental leap from "individual breakthroughs" to "systematic development."

[0044] Example 1: This embodiment prepares a superconducting material based on a pure iron substrate. Pure iron (purity ≥99.99%, inherently ferromagnetic, requiring no additional iron-cobalt-nickel doping) is used as the electron channel substrate, and p-type doped alumina (Al2O3:Mg, magnesium doping concentration 1×10⁻⁶) is used. 18 -1×10 20 cm -3 Within a certain range, the selection needs to be optimized based on the hole-layer mediation efficiency requirements. (After magnesium atoms replace some aluminum atoms, fewer valence electrons are formed, creating hole defects, making holes the majority carriers in the material, matching the functional positioning of the "hole layer.") As the raw material for the hole layer, superconducting materials are prepared using a process of "spin separation-directional locking-hole layer mediation-precise electron pairing." The specific steps are as follows: S1. Substrate atomization and spin pre-separation (locking fermion state electron spin state): S11. Raw material preparation: Pure iron powder is used as the electron channel substrate, and P-type doped alumina powder is used as the hole layer raw material. The surface adsorbed water vapor is removed by vacuum drying. S12. Atomization Process: Atomization is achieved simultaneously using laser-induced technology. Pure iron powder is fed into the material gasification unit, and a laser wavelength matching the electron energy level of pure iron is selected (specifically optimized based on the electron binding energy of pure iron within the visible-near-infrared band). The powder is bombarded with an appropriate energy density and frequency to cause pure iron atoms to detach from the surface and form atomic gas. At the same time, P-type doped alumina powder is fed into another gasification unit and bombarded with the same or appropriate laser parameters to form atomic gas, which is temporarily stored in a hole layer atomic gas buffer pressure stabilizing tank for later use. S13, Spin Pre-Separation: The atomized pure iron atom gas is introduced into the non-uniform magnetic field region. The parameters of the non-uniform magnetic field are set as the substrate magnetic induction intensity of 0.1-2T (optimized according to the separation efficiency requirements), and the rate of change of the magnetic field intensity along the direction perpendicular to the movement of the atom gas is not less than 10T / cm. At the same time, an auxiliary laser is introduced (the power is adjusted according to the electron lattice binding strength). Through the synergistic effect of magnetic field separation based on the Stern-Glach principle and laser, a spin-rich pure iron substrate with spin-up electrons and a spin-rich pure iron substrate with spin-down electrons are separated, ensuring that the unpaired electron enrichment of both types of substrates is ≥80% (confirmed by electron spin resonance test).

[0045] S2. Construct a spin-separated structure (simultaneously apply a constant external magnetic field): S21. Process Selection and Vacuum Environment Control: The heterojunction structure is constructed using atomic layer deposition (ALD). A MgO substrate (purity ≥99.99%, thickness 0.5-1 mm, ultrasonically cleaned with an acetone-ethanol mixture for 15 minutes, annealed in a muffle furnace at 900℃ for 3 hours, and then naturally cooled to room temperature) is selected. After conventional cleaning and drying, the substrate is placed in the ALD reaction chamber, and a vacuum is drawn to the high vacuum range specified in the claims (≤1×10⁻⁶). -2 Pa), the cavity temperature is optimized based on the deposition characteristics of pure iron and P-type doped alumina; S22. Applying a constant external magnetic field: Apply a constant external magnetic field with an intensity of 0.1-2T (optimized according to the electron spin orientation stability requirements) to the outside of the reaction chamber along the direction perpendicular to the thin film. The direction of the magnetic field remains unchanged until the end of this step.

[0046] S23. Composite Channel Growth: Deposited according to a repeating unit structure of "upper spiral pure iron substrate (upper spiral channel) - P-type doped alumina hole layer - lower spiral pure iron substrate (lower spiral channel)", specifically: Upward channel deposition: Upward pure iron substrate atomic gas is deposited at a set rate, with the thickness controlled at 4-200 atomic layers (optimized according to electron enrichment requirements). Hole layer deposition: Switch to P-type doped alumina atom gas, with the thickness controlled at 3-100 atomic layers (optimized based on the mediating efficiency). Downward spiral channel deposition: Switch to downward spiral pure iron substrate atomic gas and deposit upward spiral channel with the same parameters; Repeat the above unit structure to grow a cumulative total of 1-1 million pairs of superconducting junction composite channels (the specific number is determined according to the superconducting performance requirements), forming a parallel and independent composite channel system.

[0047] S3, Spin orientation stability (ensuring fermion pairing conditions): Maintain the constant external magnetic field in step S2, and use the Zeeman coupling effect to make the spin magnetic moment of the upper electron in the upper spin channel consistent with the direction of the magnetic field, and the spin magnetic moment of the lower electron in the lower spin channel opposite to the direction of the magnetic field; continue to act until the electron spin orientation is stable (specifically confirmed by conventional electron spin detection methods), ensuring that the two types of electrons are always in a spin-opposite state that can form a strong coupling Cooper pair.

[0048] S4. Achieving hole-mediated pairing (promoting fermion-to-boson conversion): By utilizing the charge polarization effect of the hole layer in p-type doped alumina (where holes are the majority carriers and can efficiently generate Coulomb attraction on electrons on both sides), the spin electrons in the spin-up channel and the spin electrons in the spin-down channel are attracted to gather at the hole layer interface. Through atomic-level precision control of the ALD process, the center-to-center distance between the two types of electrons is precisely reduced to a critical threshold "less than the diameter d of the outermost orbital loop of the electron element" (specifically determined based on the theoretical parameters of the electron-magnetic element and experimental optimization). At this point, the two types of fermions form a strongly coupled Cooper pair (transforming into bosons with superposition state characteristics), thus obtaining the initial superconducting material.

[0049] S5. Optional high-voltage regulation (optimizes superconducting performance as needed): If the initial superconducting material obtained in step four does not achieve the target superconducting performance (e.g., it does not achieve room temperature or near-room temperature superconductivity), then apply an external pressure of 0.1-100 MPa to it (the specific pressure value needs to be optimized according to the structural stability threshold of the initial superconducting material to ensure that the composite channel system does not collapse). High pressure can further reduce the relative spacing between fermion electrons, enhance the attraction between electrons, and promote the formation of more strongly coupled Cooper pairs (bosons). Finally, the superconducting performance can be further optimized through high pressure (specifically monitored and adjusted through conventional superconducting performance testing methods).

[0050] It should be noted that, as a metallic substrate, pure iron has an inherent characteristic in its free electron concentration (approximately 1 × 10⁻⁶). 22 cm -3 The free electrons (which are much higher than those of semiconductor substrates) do not require additional doping control and can directly provide sufficient free electrons for pairing. The hole layer in this embodiment uses P-type doped alumina only as an example. Not only do the parameters such as the doping concentration of this material need to be further optimized in combination with the specific experimental data in the preparation process, but it can also be replaced with other suitable P-type doped metal oxides and other materials. The specific material selection still needs to be verified and screened through subsequent experiments to achieve the best fit with pure iron substrate.

[0051] By comparing and analyzing multiple sets of experimental data, the parameter combination with the most stable spin state and optimal superconducting performance (including the matching parameters between the hole layer and the pure iron substrate) is gradually identified, ensuring that the final product achieves room temperature or near-room temperature. Even if some process ratios (such as the number of composite channel groups, magnetic field strength, and hole layer parameters) do not yet meet the target requirements for room temperature or near-room temperature, the pure iron substrate treated by this method can still reduce transmission scattering through electron spin orientation modulation, significantly improving its normal electrical and thermal conductivity.

[0052] In addition, based on the above process framework, elements such as chromium (2%-15%) and nickel (1%-8%) can be superimposed on pure iron. This not only does not destroy the core mechanism of electron spin locking and pairing and ensure that the superconducting effect is not affected, but also endows the material with corrosion resistance and high strength properties similar to stainless steel. This effectively overcomes the defect of pure iron being prone to rust and expands its application scenarios in harsh environments such as chemical industry and marine engineering.

[0053] Example 2: In this embodiment, an N-type semiconductor substrate superconducting material is prepared using N-type single-crystal silicon (purity ≥ 99.999%) as the substrate. The electron concentration is flexibly controlled by the phosphorus / arsenic doping amount, with a typical optimization range of 1 × 10⁻⁶. 15 -1×10 21 cm -3 It should be noted that increasing the electron concentration can increase the number of free electrons in the substrate that can participate in pairing, thus promoting Cooper pair formation. However, excessively high electron concentrations can restrict the activity space of unpaired free electrons, which is detrimental to improving pairing efficiency. Therefore, in practical applications, the doping concentration needs to be adapted to the atomic layer thickness parameters of the upper and lower spin electron layers. This embodiment does not have an absolute "high concentration is optimal" principle, but rather, for functional levels with different atomic layer thicknesses, there is a unique "concentration-thickness matching optimal value." This optimal value achieves a dynamic balance between "sufficient number of free electrons" and "suitable electron activity space," laying the foundation for efficient Cooper pair formation. Since N-type doping provides free electrons through phosphorus atoms and does not contain ferromagnetic components, 5% nickel element needs to be introduced through physical doping to provide a ferromagnetic basis for subsequent electron spin directional locking.

[0054] In this embodiment, p-type doped gallium nitride (GaN:Zn) is used as the hole layer material, and its zinc doping concentration is set to 1×10⁻⁶. 15 -1×10 21 cm -3Furthermore, the concentration must be compatible with the preset atomic layer thickness of the hole layer: too low a concentration will result in insufficient hole carriers available for pairing of spinning / spinning electrons, leading to missing pairing sites; too high a concentration will cause mobility decay due to reduced hole spacing and enhanced interactions, hindering smooth electron transport and pairing within the hole layer. By precisely controlling the lattice matching degree between the P-type gallium nitride and the N-type single-crystal silicon substrate through atomic layer deposition, the crystal quality and bonding stability of the hole layer and electron layer interface are ensured, constructing an efficient electron pairing "bridging platform." Based on the parameter design of the N-type semiconductor substrate and the P-type hole layer, a "spin separation-directional locking-hole layer-mediated-precise electron pairing" process is used to prepare the superconducting material. The specific steps are as follows: S1. Substrate atomization and spin pre-separation (locking fermion state electron spin state): S11. Raw material preparation and introduction of ferromagnetic components: Take N-type single-crystal silicon powder (pre-treated by phosphorus doping to adjust the electron concentration to 1×10⁻⁶). 19 cm -3 The high-concentration optimized range) is mixed with nickel powder (purity ≥99.99%) at an atomic ratio of 95:5. The mixture is then subjected to vacuum hot pressing (temperature 800℃, pressure 5MPa) to achieve uniform nickel doping, ensuring that nickel atoms do not damage the silicon crystal structure and simultaneously guaranteeing the high-concentration electron transport performance. P-type doped gallium nitride powder is used as the hole layer material. Both are vacuum dried at 100℃ for 4 hours to remove surface moisture and impurities. S12. Atomization Process: Atomization is achieved using a magnetron sputtering-assisted laser-induced process. A nickel-doped N-type single-crystal silicon mixture is fed into a material vaporization unit. A 532nm pulsed laser (parameters optimized based on atomization efficiency) matching the silicon electron binding energy is selected, along with a 0.5A sputtering current to bombard the mixture, causing silicon-nickel mixed atoms to detach from the surface and form atomic gas. Simultaneously, P-type doped gallium nitride powder is fed into another vaporization unit and bombarded with the same laser-sputtering synergistic parameters to form atomic gas, which is temporarily stored in a hole layer atomic gas buffer pressure stabilizer for later use. S13, Spin Pre-Separation: The atomized silicon-nickel mixed atomic gas is introduced into the non-uniform magnetic field region. The magnetic field parameters are set as follows: the magnetic induction intensity of the substrate is 0.1-2T (due to the nickel content, the magnetic field intensity is adapted to the ferromagnetic requirements and optimized according to the separation efficiency), and the rate of change of the magnetic field intensity along the direction perpendicular to the atomic gas movement is not less than 10T / cm. At the same time, an auxiliary laser with a wavelength of 650nm is introduced (the power is adjusted according to the silicon atom lattice binding strength). Through the synergistic effect of magnetic field separation based on the Stern-Glach principle and laser, an up-spin silicon-nickel substrate enriched with up-spin electrons and a down-spin silicon-nickel substrate enriched with down-spin electrons are separated, ensuring that the unpaired electron enrichment of both types of substrates is ≥80%. The unpaired electron enrichment is confirmed by electron spin resonance testing.

[0055] S2. Construct a spin-separated structure (simultaneously apply a constant external magnetic field): S21. Process Selection and Vacuum Environment Control: A heterojunction structure is constructed using molecular beam epitaxy (MBE) (to meet the high-precision deposition requirements of semiconductor substrates). The sapphire substrate (hydroxylated) is placed in the MBE reaction chamber, and a vacuum of 1×10⁻⁶ is applied. -8 Pa (in claim 1×10) -7 -1×10 -10 (Selected within the Pa range), the cavity temperature is optimized and set to 650℃ based on the epitaxial growth characteristics of silicon and gallium nitride; S22. Application of constant external magnetic field: Apply a constant external magnetic field with an intensity of 0.1-2T (the specific intensity is optimized according to the electron spin orientation stability in the semiconductor substrate) in the direction perpendicular to the thin film outside the reaction chamber. The direction of the magnetic field remains unchanged until the end of this step. S23. Composite Channel Growth: Deposited according to a repeating unit structure of "upward-spinning silicon-nickel substrate (upward-spinning channel) - P-type doped gallium nitride hole layer - downward-spinning silicon-nickel substrate (downward-spinning channel)", specifically: Upward channel deposition: Upward silicon-nickel atomic gas is deposited at a rate of 0.05 nm / s, with the thickness controlled at 5-200 atomic layers (the semiconductor substrate needs to be slightly thicker to ensure high-concentration electron transport, and the specific thickness is optimized according to the carrier concentration). - Hole layer deposition: Switch to P-type doped gallium nitride atomic gas, with the thickness controlled at 3-100 atomic layers (the specific thickness is optimized based on the mediating efficiency and the interface barrier of the semiconductor substrate). Downward spiral channel deposition: Switch to downward spiral silicon-nickel atom gas and deposit upward spiral channel with the same parameters; Repeat the above unit structure to grow a total of 500-500 composite channels (the number of channels in the semiconductor substrate does not need to be too high to avoid interlayer carrier scattering; the specific number should be set according to the superconducting performance requirements) to form a parallel and independent composite channel system.

[0056] S3, Spin orientation stability (ensuring fermion pairing conditions): Maintaining the constant external magnetic field in step S2, the Zeeman coupling effect is used to ensure that the spin magnetic moment of the upper electron in the upper spin channel is aligned with the direction of the magnetic field, while the spin magnetic moment of the lower electron in the lower spin channel is opposite to the direction of the magnetic field. Because electrons in semiconductor substrates are more strongly bound by the crystal lattice than in metals, the interaction time needs to be extended to 60 minutes (specifically confirmed by electron spin detection) to ensure that the two types of electrons are always in a spin-opposite state that can form a strong coupling Cooper pair, without orientation disorder.

[0057] S4. Achieving hole-mediated pairing (promoting fermion-to-boson conversion): Utilizing the charge polarization effect of the p-type doped gallium nitride hole layer (hole concentration 1×10⁻⁶) 18-1×10²¹cm -3 It can efficiently attract high-concentration free electrons to the interface, attracting the upper-spin electrons of the upper-spin channel and the lower-spin electrons of the lower-spin channel to the hole layer interface. Through atomic-level precision control of the MBE process, the center distance between the two types of electrons is precisely reduced to the critical threshold of "less than the diameter d of the outermost orbit of the electron element" (specifically determined based on the effective mass of semiconductor charge carriers and experimental optimization). At this time, the two types of fermions form a strongly coupled Cooper pair (converted into bosons), and the initial superconducting material is obtained.

[0058] S5, High-voltage regulation (optimization of superconducting performance as needed): If the initial superconducting material does not achieve the target performance, apply an external pressure of 0.1-80 MPa (the structural stability threshold of the semiconductor substrate is lower than that of metals, and the pressure is controlled within 80 MPa, specifically optimized according to the compressive strength limit of the silicon-gallium nitride heterojunction); high pressure can further reduce the electron spacing, weaken the binding of electrons by the semiconductor lattice, and promote the formation of more Cooper pairs. Finally, the superconducting performance is optimized by testing the four-wire method (the pressure parameters are adjusted according to the target at room temperature or near room temperature).

[0059] This embodiment employs an electron spin separation-oriented and hole-mediated superconducting material preparation system to realize the operation process of its atomic gas transport-deposition system as follows: (1) Up-spin and down-spin atomic gas process: After the silicon-nickel mixed atomic gas is generated by the material gasification generation unit 12 (laser-magnetron sputtering synergy), it is introduced into the spin separation variable non-uniform magnetic field action area through the delivery pipeline, and spin separation is completed with the help of 650nm auxiliary laser; the separated up-spin atomic gas is delivered to the silicon-nickel up-spin target injection port after stabilization in the buffer pressure tank, and deposited according to the set time sequence; the down-spin atomic gas is delivered to the corresponding target injection port along the same path and the deposition is completed synchronously.

[0060] (2) Hole layer transport-deposition process: After the P-type doped gallium nitride atomic gas is generated by the gasification unit, it is introduced into the hole layer buffer pressure stabilizing tank and then transported to the gallium nitride target injection port to complete the hole layer deposition at the rate adapted to the semiconductor substrate.

[0061] (3) Auxiliary unit operation: Since semiconductor raw materials are easily oxidized, the inert gas protection of the atomic gas delivery pipeline needs to be strengthened and the purging time is extended to 15 min; the temperature-pressure linkage control accuracy of the buffer pressure tank is improved to ±0.1 Pa to ensure the purity and flow rate of semiconductor atomic gas and avoid affecting the quality of heterojunction interface.

[0062] By comparing and analyzing multiple sets of experimental data, the optimal parameter combination of 'electron concentration, spin state stability, and superconductivity' is gradually identified, ensuring that the final product meets the target requirements for room temperature or near-room temperature. It should be noted that this embodiment only uses N-type single-crystal silicon (phosphorus-doped + nickel-doped) and P-type doped gallium nitride as substrates to illustrate the application steps of this method in the semiconductor field. As for which substrates (such as silicon, germanium, compound semiconductors, etc. with different doping types) can achieve optimal electrical / thermal conductivity, and which substrate combinations can stably achieve room temperature or near-room temperature performance, further determination is needed through systematic comparative studies of different types of semiconductor materials. This method provides a unified experimental framework and technical path for such research.

[0063] Even if some semiconductor substrates have not yet reached the critical conditions of room temperature or near room temperature, the electron spin orientation control method of this method can significantly reduce lattice scattering and impurity scattering in electron transport, and simultaneously achieve a significant improvement in their conductivity and thermal conductivity under normal conditions, providing a brand-new technical solution for the performance upgrade of semiconductor materials in conventional electronic fields such as chip heat dissipation and high-efficiency conductivity.

[0064] The superconducting material prepared in this embodiment is a multilayer composite film structure. Its core is formed by the cyclic deposition of basic units of "upward-spinning superconducting film-hole layer-downward-spinning superconducting film" (or "downward-spinning superconducting film-hole layer-upward-spinning superconducting film"), such as... Figure 2 As shown, the specific preparation process and structural characteristics are as follows: (1) With substrate 2-1 (corresponding to Figure 1 The substrate (numbered 11 in the middle) serves as the composite film carrier. First, upward-spinning atomic gas (or downward-spinning atomic gas) is deposited to form the first layer of upward-spinning superconducting film 2-2 (or downward-spinning superconducting film 2-2), with a thickness of 4-200 atomic layers. (2) Deposit the hole layer atomic gas to form the Nth hole superconducting film 2-3, with a thickness of 3-100 atomic layers; (3) Deposit down-spinning atomic gas (or up-spinning atomic gas) to form a third down-spinning superconducting film 2-4 (or up-spinning superconducting film 2-4), with a thickness of 4-200 atomic layers; By repeatedly depositing superconducting films in the following order: “upward superconducting film 2-2 (or downward superconducting film 2-2) → hole superconducting film 2-3 → downward superconducting film 2-4 (or upward superconducting film 2-4) → hole superconducting film 2-3 → upward superconducting film 2-2 (or downward superconducting film 2-2) → hole superconducting film 2-3 → downward superconducting film 2-4 (or upward superconducting film 2-4)…”, a superconducting multilayer composite film can be prepared. Each group of three films, “upward superconducting film 2-2 (or downward superconducting film 2-2) → hole superconducting film 2-3 → downward superconducting film 2-4 (or upward superconducting film 2-4)”, together constitutes a complete superconducting junction. By controlling the number of times the above-mentioned cyclic deposition is carried out, n pairs of superconducting junctions can be precisely prepared, and finally a superconducting multilayer composite film containing n pairs of superconducting junctions can be obtained.

[0065] In this embodiment, a constant external magnetic field of 0.1-2T is applied to the top and bottom of the composite film throughout the preparation process. This ensures that the upward-rotating electrons in the upward-rotating superconducting film and the downward-rotating electrons in the downward-rotating superconducting film are strictly and uniformly oriented, and... Figure 3 This echoes the mechanism that "up-spin / down-spin electrons need to maintain their chiral properties to form strongly coupled Cooper pairs," creating favorable conditions for electron pairing within each superconducting junction and ultimately forming a stable superconducting system. Figure 3 The core theoretical mechanism used to explain the superconductivity phenomenon of this invention (based on the published "Electric Element Magnetism Element Universe Theory," see Chinese Invention Patent 202310152282.6 and other documents) is as follows: (1) Composition and Motion Laws of Electronic Elementary Units: A single downspinning electron (3-4) or upspinning electron (3-7) is composed of an equal number of electric and magnetic elements (downspinning electrons contain 3-6 electric elements and 3-5 magnetic elements; upspinning electrons contain 3-9 electric elements and 3-8 magnetic elements). The number of the two types of elementary units is perfectly matched. The specific number is derived from the electric-magnetic-element universe theory as 1.236 × 10⁻⁶. 20 Both electric and magnetic elements move according to quantum laws and possess two key characteristics: first, the diameters of their outermost orbits are equal; second, their centers of motion differ. Electric elements move in circles with their electron center as the center, while magnetic elements move in circles with points evenly distributed on the outermost orbit of the electric element as the center. Their planes of motion are perpendicular to each other, causing each individual spin-up or spin-down electron to form a spin angular momentum vector body with a specific direction (electron spin is a recognized intrinsic angular momentum vector in modern quantum physics; "spin-down" and "spin-up" correspond to different vector directions), and together they construct a stable N-S magnetic pole dynamic structure. The essential difference between "spin-down" and "spin-up" lies in the chirality difference of the aforementioned spin vector bodies: the spin vector body of a spin-down electron follows the left-hand rule, while the spin vector body of a spin-up electron follows the right-hand rule. This characteristic naturally gives it the basis for the superposition of opposite vectors.

[0066] (2) Electron interaction and Cooper pair formation conditions: The interaction state of the up-spin electron and the down-spin electron, as two opposing spin angular momentum vector bodies, is determined by the relative relationship between the distance between their centers and the diameter d of the outermost orbit of the electron element. The core issue is whether effective vector superposition can be achieved: When the spacing is greater than d, the repulsive force of the outer magnetic element dominates, and the two spin vector bodies repel each other and cannot form an effective superposition. When the spacing is less than d, the attraction of the core electron element dominates. The upper spin vector and the lower spin vector are coupled through vector superposition to form the composite spin vector corresponding to the Cooper pair, which is consistent with the core logic of "spin-opposite electrons correlated to form Cooper pairs" in modern superconducting theory.

[0067] (3) Key role of the hole layer: In the multilayer composite film structure prepared in this embodiment, the hole superconducting film between the upper-spin superconducting film and the lower-spin superconducting film, through the potential difference between electrons and holes, pulls the upper-spin electrons (whose magnetic moments are expressed as upper-spin vector 3-7) and the lower-spin electrons (whose magnetic moments are expressed as lower-spin vector 3-4) with different chiralities on both sides towards the hole region, so that they satisfy the vector superposition condition of "spacing < d", and finally couple to form a strong coupling Cooper pair 3-1; the electric element 3-3 at the center of the strong coupling Cooper pair is composed of electric elements 3-6 and 3-9 with opposite rotation directions in two vector bodies. Their electric effects cancel each other out due to vector superposition, and only exhibit magnetism to the outside, thus exhibiting the unique diamagnetism of superconducting materials (which is consistent with the phenomenon that "magnetic fields cannot penetrate the interior of materials" in existing superconducting experiments). From the microscopic mechanism level, the scientific nature of the technical solution is verified, providing core physical guarantee for zero-resistance electron transmission.

[0068] The "Electro-Magnetic-Magnetic Universe Theory" upon which this invention is based has been publicly disclosed through multiple channels, including a Chinese invention patent (patent number: 202310152282.6), the monograph "Electro-Magnetic-Magnetic Universe Theory" (ISBN: 9789815290073), and an international preprint (https: / / vixra.org / abs / 2507.0077). This theory focuses on elucidating the structure and properties of leptons. Its research conclusions regarding the internal composition and spin properties of the electron (the core representative of leptons) directly break through the existing cognitive and theoretical limitations of superconducting technology, specifically in the following three aspects: (1) Correcting the traditional understanding of electron spin state: Clarifying that electrons (upspin / downspin) belong to fermions and their spin state is an intrinsic property that is fixed throughout their lives. A single electron does not have a superposition state, which effectively corrects the deviation in the traditional understanding that "electrons are in a superposition state of upspin and downspin".

[0069] (2) Revealing the core transformation logic of superconductivity: The essence of superconductivity is the "transformation of electrons from fermions to bosons". Only when the spin electrons and spin electrons in the fermion state satisfy the condition that "the distance between the electron centers is less than the diameter of the outermost orbit of the electron element", they can overcome the magnetic repulsion through the attraction of the electron element to form a coupled Cooper pair, and then transform into a boson with superposition state characteristics, and finally realize the superconducting phenomenon.

[0070] (3) Elucidating the microscopic structure and spin mechanism of electrons: Based on the "electromagnetic universe theory", each electron consists of 1.236 × 10 20 A single electric electron and an equal number of magnetic elements constitute a system where both follow quantum laws and undergo circular motion. The outermost orbital diameters are equal, but their centers of motion differ. The electric electron moves in a circle centered on its electron center, while the magnetic elements move in a circle centered on points evenly distributed on the outermost orbital plane of the electric electron. Their planes of motion are perpendicular, making each individual spin-up or spin-down electron a spin angular momentum vector body with a specific direction. Simultaneously, the motion of the magnetic elements forms the N and S poles of the electron. Furthermore, the essence of "spin-down" and "spin-up" is the chiral difference of these spin vector bodies; spin-down follows the left-hand rule, while spin-up follows the right-hand rule, naturally possessing the basis for reverse vector superposition. This research fundamentally elucidates the essential mechanism of "fermions (spin-up / spin-down electrons) pairing and transforming into bosons," providing unified and rigorous theoretical support for the precise preparation of superconducting materials. Based on this, developing a novel preparation method centered on "locking spin-up / spin-down fermion-state electrons and controlling the boson formation process" has become a key path to overcome the century-old bottleneck of existing superconducting technology.

[0071] Example 3: Based on the above embodiments, this embodiment can also take the heterojunction fabrication process as the core and be compatible with the following two extended implementation methods to adapt to the R&D and mass production needs of different technical fields: (1) Nanoparticle stacking molding method: Each layer of substrate is processed separately. A constant directional magnetic field is applied during the preparation of nanoparticles to pre-fix the electron spin of the substrate to a single state (spin up or spin down) to produce nanoparticles with consistent spin. Subsequently, a directional magnetic field is continuously applied throughout the layered stacking and shaping process to arrange and shape the spin up, hole layer and spin down nanoparticles layer by layer, forming an alternating spin separation structure of "spin up unit layer - hole layer - spin down unit layer - hole layer", which is suitable for superconducting research and development in the field of nanomaterials. (2) Liquid substrate coating / spraying film formation method: Each layer of substrate is processed separately. A constant directional magnetic field is applied when preparing the liquid system to pre-fix the electron spin of the substrate to a single state (spin up or spin down) to form a liquid substrate with consistent spin. Then, a directional magnetic field is continuously applied throughout the coating, spraying, casting and curing film formation process to cure the liquid substrate layer by layer to form the above-mentioned alternating spin separation structure, which is suitable for mass production scenarios of low-cost coating film formation.

[0072] In this embodiment, non-ferromagnetic substrates require the addition of 1%-15% iron, nickel, and cobalt (ferromagnetic elements), while ferromagnetic substrates do not require additional addition. This addition (or the ferromagnetism of the substrate itself) works in conjunction with the constant directional magnetic field throughout the process to ensure that the electron spin remains oriented from the basic unit to the final structure and remains stable even after the magnetic field is removed. The hole layer and spin unit layer substrates are compatible. This method can prepare superconducting materials and can improve electrical and thermal conductivity, reduce mass production costs, and provide a feasible path for superconducting research and technology transfer for researchers with different technical backgrounds.

Claims

1. A method for preparing a superconducting material with electron spin separation orientation and hole-mediated conductivity, characterized in that, This is achieved through a fully controllable chain of processes: "locking the electron spin state → stabilizing the spin direction → constructing a hole layer to mediate → facilitating precise pairing → forming the initial boson," specifically including the following steps: S1. Substrate atomization and spin pre-separation: First, the selected electron channel substrate and hole layer material are atomized separately, so that the atoms of the channel substrate detach from the surface to form atomic gas, and the hole layer material is simultaneously formed into atomic gas; then, the atomized channel substrate is subjected to spin pre-separation through a preset non-uniform magnetic field, thereby obtaining an upspin substrate enriched with upspin electrons and a downspin substrate enriched with downspin electrons respectively. S2. Constructing a spin-separated structure: A thin film is prepared on a substrate in a vacuum environment using a heterojunction fabrication process; a constant external magnetic field with an intensity of 0.1-2T is continuously applied in the direction perpendicular to the film; a parallel independent composite channel system with a total number of superconducting junctions of 1-1 million pairs is grown by repeating units of upper spin substrate - hole-type intermediate layer - lower spin substrate. Each superconducting junction consists of "one upper spin channel + one hole-type intermediate layer + one lower spin channel" or "one lower spin channel + one hole-type intermediate layer + one upper spin channel". When multiple layers are stacked, they are arranged in a natural alternation. The total number of superconducting junctions is adjusted according to the film thickness and carrier density requirements. This composite channel system can also be constructed by stacking nanoparticles or by coating / spraying liquid substrate. A constant directional magnetic field must be applied throughout the preparation process to ensure electron spin orientation. S3, Spin orientation stabilization: Utilizing the Zeeman coupling effect of the constant external magnetic field in step (2), the spin magnetic moment of the upper electron in the upper spin channel is aligned with the direction of the magnetic field, and the spin magnetic moment of the lower electron in the lower spin channel is opposite to the direction of the magnetic field. This maintains the two types of electrons in a spin-opposite stable state where they can form a strong coupling Cooper pair. Relying on the ferromagnetic properties of the electron channel substrate, the spin direction is stably preserved after the external magnetic field is removed. S4. Hole-mediated pairing: Strongly coupled Cooper pairs are formed through the charge polarization effect of the hole-type interlayer. Based on the low free electron environment of the hole-type interlayer itself and the weak positive charge generated by charge polarization, it exerts a continuous attraction on the negatively charged newly formed strongly coupled Cooper pairs, thereby promoting the concentrated distribution of strongly coupled Cooper pairs in the hole-type interlayer and the interface region and forming Cooper pair aggregation regions, ultimately obtaining the initial superconducting material. S5. High-pressure control: If the initial superconducting material does not achieve the target performance, i.e., it does not achieve room temperature or near room temperature, an external pressure of 0.1-100MPa is applied to enhance the attraction of electrons by reducing the electron center spacing, promoting the formation of more strongly coupled Cooper pairs, and finally achieving room temperature or near room temperature. During the high-pressure control process, since the electron spin is a fixed property of fermions, there is no need to worry about the pressure causing the spin state to change.

2. The method for preparing superconducting materials with electron spin separation orientation and hole-mediated transmission according to claim 1, characterized in that, The electron channel substrate in step S1 is selected from pure iron, stainless steel, copper alloy, metal oxide, semiconductor material, or other solid materials, and the electron channel substrate must contain at least one of iron, cobalt, and nickel. If the substrate itself does not contain the above-mentioned ferromagnetic components, at least one of iron, cobalt, and nickel with an atomic percentage of 1%-15% must be introduced by physical doping or chemical doping before atomization. The hole-type intermediate layer material is selected from semiconductor material, oxide material, or other hole-type material. The atomization method includes laser induction and magnetron sputtering. The non-uniform magnetic field is achieved by an asymmetric magnetic pole configuration with one end focusing magnetization and the other end dispersing magnetization. The focusing magnetic pole adopts a pointed structure, and the dispersing magnetic pole adopts a planar or arc-shaped structure. The two magnetic poles are arranged opposite each other. The base magnetic induction intensity of the non-uniform magnetic field is 0.1-2T, and the magnetic field intensity along the direction perpendicular to the particle motion is gradually distributed with a change rate of not less than 10T / cm. The unpaired electron enrichment of both the upper and lower spin substrates is ≥80%.

3. The method for preparing superconducting materials with electron spin separation orientation and hole-mediated transmission according to claim 2, characterized in that, The heterojunction fabrication process described in step S2 is one of laser sputtering, magnetron sputtering, molecular beam epitaxy, chemical vapor deposition, and atomic layer deposition. The vacuum pressure ranges corresponding to each process are ≤6×10⁻⁶. -3 Pa, 1×10 -3 Pa-5×10 -1 Pa, 1×10 -7 Pa-1×10 -10 Pa, ≥1×10 -1 Pa and ≤1×10 -2 Pa; the substrate comprises sapphire, MgO and SiC.

4. The method for preparing superconducting materials with electron spin separation orientation and hole-mediated transmission according to claim 3, characterized in that, The specific process of forming a strongly coupled Cooper pair in step S4 is as follows: First, relying on the physical structure and carrier characteristics of the hole-type intermediate layer, spatial isolation is formed between the adjacent upper and lower spin channels on both sides to block the cross-channel flow of upper and lower spin electrons; then, Coulomb attraction is applied to the adjacent upper and lower spin electrons on both sides to attract the two types of fermion electrons to gather at the interface, so that the distance between the electron centers is precisely reduced to less than the diameter d of the outermost orbital loop of the electron cell, thereby generating a strongly coupled Cooper pair.

5. The method for preparing superconducting materials with electron spin separation orientation and hole-mediated transmission according to claim 4, characterized in that, In the initial superconducting material formed in step S4, the thickness of the upper and lower swirl channels is 4-200 atomic layers, and the thickness of the hole-type intermediate layer is 3-100 atomic layers.

6. A system for preparing a superconducting material with electron spin separation orientation and hole-mediated conduction as described in any one of claims 1-5, characterized in that, This includes an upspinning atomic gas buffer and pressure stabilizing tank, a first upspinning atomic gas distribution pipe, a first upspinning atomic gas control solenoid valve, a first upspinning channel target injection port, a first directional magnetic field, a non-uniform magnetic field, an upspinning atomic gas collection pipe, an Nth upspinning atomic gas distribution pipe, an Nth upspinning atomic gas control solenoid valve, a first hole layer target injection port, a first substrate, a channel substrate vaporization generating unit, a channel substrate atomic gas delivery pipeline, a hole layer material vaporization generating unit, a hole layer material atomic gas delivery pipeline, a hole layer material atomic gas buffer and pressure stabilizing tank, a first hole layer atomic gas distribution pipe, and a first hole layer target injection port. The system includes a gas-controlled solenoid valve, the first downward-spinning channel target injection port, a spin-controlled auxiliary laser, the first downward-spinning atomic gas distribution pipe, the Nth hole-layer atomic gas distribution pipe, the first downward-spinning atomic gas control solenoid valve, the Nth hole-layer atomic gas control solenoid valve, the Nth upward-spinning channel target injection port, the Nth directional magnetic field, a downward-spinning atomic gas collection pipe, the Nth hole-layer target injection port, the Nth substrate, a downward-spinning atomic gas buffer and pressure stabilizing tank, the Nth downward-spinning atomic gas distribution pipe, the Nth downward-spinning atomic gas control solenoid valve, and the Nth downward-spinning channel target injection port; the channel substrate vaporization generation unit transmits atomic gas through the channel substrate. The delivery pipeline is connected to a non-uniform magnetic field. A spin-state modulation auxiliary laser is positioned at the location of the non-uniform magnetic field to assist spin separation. The N-pole side of the non-uniform magnetic field is connected to an upper-spin atomic gas buffer and pressure stabilizing tank via an upper-spin atomic gas collection pipe, and the S-pole side is connected to a lower-spin atomic gas buffer and pressure stabilizing tank via a lower-spin atomic gas collection pipe. The output end of the upper-spin atomic gas buffer and pressure stabilizing tank is connected to a first upper-spin atomic gas distribution pipe and an Nth upper-spin atomic gas distribution pipe. The first and Nth upper-spin atomic gas distribution pipes are respectively equipped with a first upper-spin atomic gas control solenoid valve and an Nth upper-spin atomic gas control solenoid valve. The first and Nth upward-swirling atomic gas distribution pipes are respectively equipped with the first upward-swirling channel target injection port and the Nth upward-swirling channel target injection port at their ends; the output end of the downward-swirling atomic gas buffer pressure stabilizing tank is connected to the first and Nth downward-swirling atomic gas distribution pipes, and the first and Nth downward-swirling atomic gas distribution pipes are respectively equipped with the first and Nth downward-swirling atomic gas control solenoid valves, and the first and Nth downward-swirling atomic gas distribution pipes are respectively equipped with the first and Nth downward-swirling channel target injection ports at their ends;The cavity layer material vaporization generating unit is located between the upper-swirling atomic gas buffer and pressure stabilizing tank and the lower-swirling atomic gas buffer and pressure stabilizing tank. The cavity layer material vaporization generating unit is connected to the cavity layer material atomic gas buffer and pressure stabilizing tank via a cavity layer material atomic gas delivery pipeline. The output end of the cavity layer material atomic gas buffer and pressure stabilizing tank is connected to a first cavity layer atomic gas distribution pipe and an Nth cavity layer atomic gas distribution pipe. The first cavity layer atomic gas distribution pipe and the Nth cavity layer atomic gas distribution pipe are respectively equipped with a first cavity layer atomic gas control solenoid valve and an Nth cavity layer atomic gas control solenoid valve. The ends of the first and Nth hole layer atomic gas distribution tubes are respectively provided with the first hole layer target injection port and the Nth hole layer target injection port. The first upward spiral channel target injection port, the first hole layer target injection port, and the first downward spiral channel target injection port are positioned towards the first substrate, while the Nth upward spiral channel target injection port, the Nth hole layer target injection port, and the Nth downward spiral channel target injection port are positioned towards the Nth substrate. The first substrate is placed between the S and N poles of the first directional magnetic field, and the Nth substrate is placed between the S and N poles of the Nth directional magnetic field.

7. The superconducting material preparation system based on electron spin separation orientation and hole-mediated superconductivity according to claim 6, characterized in that, Its working process is as follows: (1) After uniformly mixing the components of the upper and lower swirl membrane channel substrates, the mixture is fed into the channel substrate gasification generation unit. It is converted into a mixture of upper and lower swirl atomic gas by laser bombardment, ion bombardment, heating evaporation or chemical decomposition. The mixed atomic gas is directionally delivered to the non-uniform magnetic field region through the channel substrate atomic gas delivery pipeline. At the same time, the spin-state modulation auxiliary laser is activated to work with the non-uniform magnetic field to complete the spin-state screening and separation of gaseous raw materials. (2) The separated upward-swirling atomic gas is introduced into the upward-swirling atomic gas buffer and pressure stabilizing tank through the upward-swirling atomic gas collection pipe. A portion of the upward-swirling atomic gas in the buffer and pressure stabilizing tank is transported to the first upward-swirling channel target injection port through the first upward-swirling atomic gas distribution pipe and the first upward-swirling atomic gas control solenoid valve, and is injected into the first substrate according to the set timing to complete the upward-swirling film deposition. The other portion of the upward-swirling atomic gas is transported to the Nth upward-swirling channel target injection port through the Nth upward-swirling atomic gas distribution pipe and the Nth upward-swirling atomic gas control solenoid valve, and is injected into the Nth substrate according to the set timing. The downward-swirling atomic gas is transported to the Nth upward-swirling channel target injection port through the Nth upward-swirling atomic gas distribution pipe and the Nth upward-swirling atomic gas control solenoid valve, and is injected into the Nth substrate according to the set timing. The collection tube enters the downspin atomic gas buffer and stabilizing tank. A portion of the downspin atomic gas in the buffer and stabilizing tank is delivered to the first downspin channel target injection port through the first downspin atomic gas distribution pipe and the first downspin atomic gas control solenoid valve. It is then injected onto the first substrate according to the set timing sequence to complete the downspin film deposition. The other portion of the downspin atomic gas is delivered to the Nth downspin channel target injection port through the Nth downspin atomic gas distribution pipe and the Nth downspin atomic gas control solenoid valve. It is then injected onto the Nth substrate according to the set timing sequence. In this way, the deposition of upspin and downspin films is completed simultaneously on N substrates through N channels. (3) After uniformly mixing the components of the hole layer channel substrate, the mixture is fed into the hole layer material gasification generation unit and converted into hole layer atomic gas through laser bombardment, ion bombardment, heating evaporation or chemical decomposition. The hole layer atomic gas is introduced into the hole layer material atomic gas buffer and pressure stabilizing tank through the hole layer material atomic gas delivery pipeline for temporary storage and accumulation. A portion of the hole layer atomic gas is delivered to the first hole layer target injection port through the first hole layer atomic gas distribution pipe and the first hole layer atomic gas control solenoid valve, and injected into the first substrate according to the preset rate, direction and time sequence. At the same time, another portion of the hole layer atomic gas is delivered to the Nth hole layer target injection port through the Nth hole layer atomic gas distribution pipe and the Nth hole layer atomic gas control solenoid valve, and injected into the Nth substrate according to the set time sequence to complete the hole layer deposition of the Nth substrate.

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