Focusing control system and focusing method applied to SIC ion implanter

Abstract

The invention discloses a focusing control system and a focusing method applied to an SIC ion implanter. The control system comprises an industrial personal computer, an ADIO controller, a first high-voltage power supply, a high-voltage bin, a focusing silicon stack, a focusing electrode, a focusing bleeder resistor and a mounting flange. The industrial personal computer is connected with the ADIO controller, the ADIO controller is connected with the first high-voltage power source, the first high-voltage power source is located in the high-voltage bin and connected with the focusing silicon stack, the focusing silicon stack is connected with the mounting flange through the metal fixing piece, the focusing electrode is fixed in the mounting flange, one end of the focusing bleeder resistor is connected with the mounting flange, and the other end of the focusing bleeder resistor is connected with the high-voltage bin. And the other end is connected with the high-pressure cabin. The method has the advantages of remarkably improving the ion utilization rate and the like.

Description

TECHNICAL FIELD

[0001] The present application mainly relates to the technical field of ion implantation process, and particularly relates to a focusing control system and a focusing method applied to an SIC ion implanter. BACKGROUND

[0002] The ion implantation process is to ionize atoms of a certain element, accelerate them in an electric field, obtain a high speed, and then shoot into the wafer surface to change the physical or chemical properties of the wafer material surface. The SIC ion implanter is divided into medium beam ion implanter, large beam ion implanter, and high energy ion implanter according to energy. Each model has a specific acceleration mode, which is divided into high energy mode and low energy mode. The high energy mode and the deceleration mode are realized through a special potential switching device. In the high energy mode, the ion kinetic energy is relatively large, the ion transmission time is short, the divergence is small, and the utilization rate is high. In the low energy mode, the ion kinetic energy is relatively small, the ion transmission time is long, and the ion repulsion force is large, which leads to beam divergence and low utilization rate.

[0003] The SIC ion implanter process is divided into three stages, namely ion beam generation, ion beam selection, and ion beam detection. In the ion beam generation stage, the ion source arc chamber generates positive ions by electron and atom collision. The ions are extracted by a high-voltage electrode to form a beam. At this time, the ion beam is quite diverse, the charge is not uniform, and it is doped with various atoms and electrons. It is far from the use state. The electrons are screened out by the suppression electric field, and the required charged ions are selected by the magnetic field. At this time, the beam has reached the use state. After the detection device tests the important parameters such as beam energy and angle, the implanter can perform implantation work. The low energy beam of the ion implanter is slow in ion speed, and the beam divergence is serious, which leads to large beam spot and center position deviation.

[0004] The SIC ion implanter is composed of a high-pressure chamber area, a beam line area and a target chamber area, the high-pressure chamber area mainly functions to generate an ion beam and preliminarily screen the ion beam, and can adjust the ion beam state, the beam line area mainly functions to further screen the ion beam, and the ion beam with an energy or charge not meeting the requirements is screened out by a magnetic field and an electric field, and the electrons doped in the beam are suppressed and introduced into the ground through a protective graphite, so that a pure ion beam meeting the implantation requirements is obtained, the target chamber area functions to collect and analyze the beam to be implanted by using a graphite collection cup, and when various process parameters meet the implantation requirements, the ion implantation task can be performed, and if the beam does not meet the requirements, the power supply and the magnetic field parameters of the high-pressure chamber area need to be adjusted. SUMMARY

[0005] In view of the technical problems of the prior art, the application provides a focusing control system and a focusing method applied to a SIC ion implanter, which significantly improve ion utilization.

[0006] To solve the above technical problems, the technical scheme provided by the application is as follows. A focusing control system applied to a SIC ion implanter, comprising an industrial computer, an ADIO controller, a first high-voltage power supply, a high-pressure chamber, a focusing silicon stack, a focusing electrode, a focusing discharge resistor and a mounting flange, wherein the industrial computer is connected with the ADIO controller, the ADIO controller is connected with the first high-voltage power supply, the first high-voltage power supply is located inside the high-pressure chamber and connected with the focusing silicon stack, the focusing silicon stack is connected with the mounting flange through a metal fixing part, the focusing electrode is fixed inside the mounting flange, and one end of the focusing discharge resistor is connected with the mounting flange and the other end is connected with the shell of the high-pressure chamber.

[0007] Further improvement of the above technical scheme is as follows. The focusing electrode comprises a first fixed threaded port, a beam transmission light path hole, a second fixed threaded port, a third fixed threaded port, a first fixed pin and a second fixed pin, the first fixed threaded port, the second fixed threaded port and the third fixed threaded port are symmetrically distributed for fixing the focusing electrode, the beam transmission light path hole is located at the center of the focusing electrode as an ion beam transmission space, and the first fixed pin and the second fixed pin are symmetrically distributed for positioning the focusing electrode.

[0008] The focusing and venting resistor includes a first resistor connecting ball, a first high-voltage resistor, a brass sleeve, a second high-voltage resistor, a second resistor connecting ball, a resistor connecting ball fixing hole, and a resistor fixing port; the first high-voltage resistor and the second high-voltage resistor are connected through the brass sleeve, the first resistor connecting ball is connected to the first high-voltage resistor by a screw, the second resistor connecting ball is connected to the second high-voltage resistor by a screw, and the resistor fixing port is used to fix the focusing and venting resistor to the screw hole of the high-voltage chamber.

[0009] The focused silicon stack includes a base, a base fixing plate, a bottom fixing plate, an insulating cylinder, a middle fixing plate, a top fixing plate, an insulating pillar, a base support block, an epoxy support plate, a discharge disk support rod, a discharge disk, a wiring ball, a cable lock head seat, an insulating device, a connecting column, and multiple fasteners. The base is installed on the bottom fixing plate with screws. The insulating cylinder contains a discharge disk support rod and a discharge disk. The wiring ball is used to crimp high-voltage power cables, and the insulating device is used to insulate high-voltage output cables.

[0010] The focused silicon stack integrates multiple welding boards, each board containing multiple high-voltage unidirectional diodes, multiple high-voltage resistors, and multiple surge resistors; the multiple boards are connected by metal screws, and the welding points are coated with silicone grease to prevent creepage.

[0011] The first high-voltage power supply has an output voltage range of -125KV to 0, a current output of 5mA, a power output of 625W, and a voltage accuracy of 0.01%. The ground wire of the first high-voltage power supply, one end of the focusing discharge resistor, and the grounding point of the high-voltage chamber are interconnected and at the same potential.

[0012] The focusing control system also includes a charge discharge circuit, comprising an equivalent high-voltage power supply, an equivalent resistance R1 for the focusing silicon stack, an equivalent resistance R2 for the focusing discharge resistor, an equivalent ground for the first high-voltage chamber, an equivalent focusing electrode, and an equivalent ground for the second high-voltage chamber; wherein, the equivalent resistance R1 for the focusing silicon stack includes a high-voltage unidirectional diode D1, a surge suppression resistor R11, and a high-voltage resistor R12, used for voltage division and surge protection.

[0013] The fiber optic communication between the industrial computer and the ADIO controller is a dual-loop system, consisting of a main loop communication and a secondary loop communication.

[0014] The present invention also discloses an ion beam focusing method based on the focusing control system of a SIC ion implanter as described above, comprising the following steps: The output voltage parameters of the first high-voltage power supply can be remotely set via an industrial control computer. The ADIO controller converts the setting signal into a control signal and sends it to the first high-voltage power supply. The first high-voltage power supply applies a negative high voltage to the focusing electrode, forming an electric field between the focusing electrode and the high-voltage ground electrode; The ion beam experiences a horizontal force under the influence of an electric field, which increases its horizontal velocity and achieves beam focusing. Monitor changes in the back-end beam current and adjust the output voltage of the first high-voltage power supply until the beam current reaches its maximum value. The charge on the focusing electrode is discharged after the power is turned off by focusing the discharge resistor.

[0015] As a further improvement to the above technical solution: When adjusting the output voltage of the high-voltage power supply, a slow change is adopted to avoid beam divergence, and the reliability of signal transmission is ensured through dual-loop fiber optic communication.

[0016] Compared with the prior art, the advantages of the present invention are as follows: This invention effectively solves the problems of severe beam divergence, large beam spot size, and center position offset caused by the slow speed and long transmission time of low-energy ion beams, thus significantly improving ion utilization. The system consists of key components such as an industrial control computer, an ADIO controller, a high-voltage power supply, and a focusing electrode. It achieves beam focusing by precisely controlling the electric field force to apply horizontal acceleration to the ions. The control system remotely sets parameters via the industrial control computer, and the ADIO controller converts the signals to drive the high-voltage power supply to output a high-precision voltage (accuracy up to 0.01%), forming a focusing lens electric field between the focusing electrode and the ground electrode, increasing the horizontal velocity of the ion beam and converging it to the center line. Technical benefits include: optimized beam focusing ensures smooth entry into the beamline region, maximizing utilization; independent modular design of system components facilitates disassembly, maintenance, and industrialization; dual-loop communication ensures signal reliability and avoids abnormal interruptions; the focusing silicon stack reduces surge current, and the discharge circuit promptly discharges charge, protecting the high-voltage power supply and improving overall stability and operating time; furthermore, the high-voltage lines use flame-retardant and voltage-resistant materials, further enhancing system safety. Overall, this invention achieves fine beam control in low-energy mode, overcoming the shortcomings of existing technologies such as high difficulty in adjustment and low efficiency. Attached Figure Description

[0017] Figure 1 This is a control principle diagram of the focusing control system in an embodiment of the present invention.

[0018] Figure 2 This is an equivalent schematic diagram of the focusing control system of the present invention in an embodiment.

[0019] Figure 3 This is a schematic diagram of the component layout of the focusing system of the present invention in a specific application.

[0020] Figure 4 This is a front view of the focused silicon stack of the present invention in a specific application.

[0021] Figure 5This is an internal diagram of the focused silicon stack of the present invention in a specific application.

[0022] Figure 6 This is a front view of the focused discharge resistor of the present invention in a specific application.

[0023] Figure 7 This is a rear view of the focused discharge resistor of the present invention in a specific application.

[0024] Figure 8 This is a front view of the focusing electrode of the present invention in a specific application.

[0025] Figure 9 This is a force direction diagram of the single-charge adjustment process of the focusing system of the present invention in a specific application.

[0026] Figure 10 This is a beam deflection pattern of the focusing system of the present invention in a specific application.

[0027] Figure 11 This is the transmission pattern after beam adjustment for the focusing system of the present invention in a specific application.

[0028] Legend: 1. Base; 2. Base fixing plate; 3. Bottom fixing plate; 4. Insulating cylinder; 5. Middle fixing plate; 6. Top fixing plate; 7. Insulating support column; 8. Base support block; 9. Epoxy support plate; 10. Discharge disk support rod; 11. Discharge disk; 12. Terminal ball; 13. Cable lock head seat; 14. Insulating device; 15. Connecting post; 16. First socket head cap countersunk screw; 17. Second socket head cap countersunk screw; 18. Socket head cap screw ; 19. First Phillips head pan head screw; 20. Second Phillips head pan head screw; 21. Grade A coarse thread type 1 hex nut; 22. Coarse thread full thread hex head bolt; 23. Grade A flat washer; 24. Standard spring washer; 25. Grade A flat washer; 26. Standard spring washer; 27. Socket head cap screw; 28. Grade A coarse thread hex thin nut; 29. ​​Annular crimp end; 30. Nylon insulated hose connector; 31. Nylon insulated hose; 101. First 102. Fixed threaded port; 103. Beam transmission optical path hole; 104. Second fixed threaded port; 105. Third fixed threaded port; 106. First fixing pin; 107. Second fixing pin; 208. High-voltage chamber ground electrode; 301. Equivalent high-voltage power supply; 302. Focusing silicon stack equivalent resistance R1; 303. Focusing discharge resistor equivalent resistance R2; 304. First high-voltage chamber equivalent ground; 305. Equivalent focusing electrode; 306. Second high-voltage chamber equivalent ground ; 501, First resistor connecting ball; 502, First high-voltage resistor; 503, Brass sleeve; 504, Second high-voltage resistor; 505, Second resistor connecting ball; 506, Resistor connecting ball fixing hole; 507, Resistor fixing port; 801, Industrial control computer; 802, ADIO controller; 803, First high-voltage power supply; 804, High-voltage chamber; 805, Focusing silicon stack; 806, Focusing electrode; 807, Focusing bleeder resistor; 808, Mounting flange. Detailed Implementation

[0029] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0030] like Figure 1As shown in the embodiment of the present invention, the focusing control system for a SiC ion implanter includes an industrial computer 801, an ADIO controller 802, a first high-voltage power supply 803, a high-voltage chamber 804, a focusing silicon stack 805, a focusing electrode 806, a focusing bleeder resistor 807, and a mounting flange 808. The industrial computer is connected to the ADIO controller via optical fiber and is mainly used for system signal control and communication. The ADIO controller is used to control the first high-voltage power supply 803 and for electrical signal conversion. The first high-voltage power supply 803 is mainly used to provide high potential and power input to the focusing electrode device to ensure its normal operation. The focusing electrode is used for ion beam focusing. The focusing silicon stack is used for voltage equalization, reducing surge current, and protecting the high-voltage power supply and other equipment. The high-voltage bleeder resistor is used to bleed the charge from the focusing electrode and protect the high-voltage power supply and other equipment. The control system operates by remotely controlling the output of the high-voltage power supply to generate a horizontal electric field, changing the horizontal force on the ions, and thus changing the horizontal velocity to adjust the beam current and maximize ion utilization by achieving ion beam focusing.

[0031] Specifically, the industrial computer 801 is connected to the ADIO controller 802 via optical fiber, where the system and control master station are installed. It is used for setting and acquiring signal processing. The software-level configuration includes 0-125KV voltage setting and acquisition, and displays the information on the operation page to achieve remote control. The optical fiber communication is a dual-loop system, consisting of a main loop communication and a secondary loop communication. Its function is to prevent abnormalities in one optical fiber communication path from affecting the normal operation of the system. The ADIO controller 802 is connected to the first high-voltage power supply 803 via a shielded control cable. The ADIO controller 802 is used to interact with the power supply information, control the output of the high-voltage power supply by setting the voltage from 0 to 10VDC, and can also collect the digital alarm signal of the high-voltage power supply, convert the analog signal to binary, and realize the optical fiber transmission signal. The first high-voltage power supply 803 is located inside the high-voltage chamber 804. Its ground wire is connected to the high-voltage chamber's grounding point. The first high-voltage power supply 803 is connected to the focusing silicon stack 5 via a high-voltage output cable. The first high-voltage power supply 803 has a high-voltage output of -125KV-0, a current output of 5mA, and a power output of 625W. The power input voltage has two configurations: 115VAC and 230VAC, with an accuracy of 0.01%. Its main function is to apply a high potential to the focusing electrode 806, creating an electric field between it and the ground potential, thus producing a focusing lens shape. This high-precision power supply allows for precise adjustment of the beam focusing point.

[0032] The high-voltage chamber 804 is a high-potential region, mainly used to generate ion beams for preliminary ion screening, while also providing the potential for further acceleration of the ion beams. The focusing silicon stack 805 is connected to the focusing electrode mounting flange 808 via a metal fastener; The focusing electrode 806 is installed inside the focusing electrode mounting flange 808 and is fixed by a pin and a nut connection. The focusing electrode 806 and the focusing electrode mounting flange 808 have the same potential and the resistance between them is less than 0.5Ω. One end of the focusing discharge resistor 807 is fixed to the lower end of the focusing electrode mounting flange 808 with screws, and the other end is fixed to the high voltage chamber shell with screws and connected to the ground wire to ensure that the potential is consistent. The first high-voltage power supply 803 ground wire, one end of the focusing discharge resistor 807, and the high-voltage chamber grounding point are connected, belonging to the same grounding point and the same potential.

[0033] like Figure 2 As shown, the equivalent circuit of the focusing control system includes an equivalent high-voltage power supply 301 and an equivalent resistor R1 for the focusing silicon stack. Figure 3 302), the equivalent resistance of the focusing bleeder resistor R2 ( Figure 3 The equivalent ground of the first high-voltage chamber is 303), the equivalent focusing electrode is 304, the equivalent focusing electrode is 305, and the equivalent ground of the second high-voltage chamber is 306; the equivalent high-voltage power supply 301 adopts negative high-voltage output, and there are 24 equivalent resistors R1 for the focusing silicon stack, of which 4 are integrated into a group on one board, and a total of 6 boards are composed; the equivalent resistor R1 for the focusing silicon stack includes a high-voltage unidirectional diode D1, a surge suppression resistor R11, and a high-voltage resistor R12.

[0034] The internal high-voltage unidirectional diode D1 is forward-biased and reverse-biased. The surge suppressor R11 is selected with parameters of 470Ω. Its function is to reduce the load voltage rise speed when the power supply starts up, reduce the surge current generated in the circuit, and convert electrical energy into heat energy consumption. The high-voltage resistor R12 is selected with parameters of 100MΩ. Its function is to make the voltage division of the 6 R1 segments consistent, to ensure that the voltage division of the high-voltage unidirectional diode D1 in each segment is consistent, and its other function is to protect the electronic components in the circuit and the high-voltage power supply.

[0035] The equivalent resistance R2 of the focusing discharge resistor is selected with parameters of 220MΩ and power of 600W. Its functions are twofold: first, to form a voltage divider circuit; and second, to discharge the charge on the focusing electrode after the power is turned off, thus protecting the high voltage power supply. The equivalent focusing electrode 305 interacts with the high-voltage ground electrode 205 to form an electric field, applying a horizontal force to the positively charged ion beam, increasing the ion velocity in the horizontal direction, and focusing the ion beam. When the equivalent high-voltage power supply 301 outputs voltage, the power supply outputs a negative high voltage, and the upper end of R1 is at a negative potential. After voltage division through R12, D1 is fully conducting. At this time, the resistance of R1 is approximately 470Ω, and the circuit resistance is 24 times that of R1, approximately 0.11MΩ. 24 times R1 and R2 form a closed circuit, and the potential of the equivalent focusing electrode 305 is consistent with that of the upper end of R2, which can be used to do work on the ion beam, generating a focusing electric field to achieve the effect of focusing the ion beam.

[0036] like Figure 8As shown, the focusing electrode 806 includes a first fixed threaded port 101, a beam transmission optical path hole 102, a second fixed threaded port 103, a third fixed threaded port 104, a first fixing pin 105, and a second fixing pin 106. The first fixed threaded port 101, the second fixed threaded port 103, and the third fixed threaded port 104 are symmetrically positioned for fixing the focusing electrode 806. The beam transmission optical path hole 102 is located at the center of the focusing electrode 806 and belongs to the ion beam transmission space. The first fixing pin 105 and the second fixing pin 106 are symmetrically distributed for positioning the focusing electrode 806. The main function of the focusing electrode 806 is to change the force on the ions in the horizontal direction, thereby changing the horizontal velocity of the ions and exhibiting the ion beam focusing effect.

[0037] like Figures 4-5 As shown, the functions of the focused silicon stack 805 are: first, to reduce the load voltage rise speed when the power supply starts up, reduce the surge current generated in the circuit, and convert electrical energy into heat energy consumption; second, to protect the circuit electronic devices and high-voltage power supply. The focused silicon stack 805 includes a base 1, a base fixing plate 2, a bottom fixing plate 3, an insulating cylinder 4, a middle fixing plate 5, a top fixing plate 6, an insulating support column 7, a base support block 8, an epoxy support plate 9, a discharge disk support rod 10, a discharge disk 11, a terminal ball 12, a cable lock head seat 13, an insulating device 14, a connecting column 15, a first hexagon countersunk screw 16, a second hexagon countersunk screw 17, a hexagon socket head cap screw 18, a first cross-head pan head screw 19, a second cross-head pan head screw 20, a Class A coarse thread type 1 hexagonal nut 21, a coarse thread full thread hexagonal head bolt 22, a Class A flat washer 23, a standard spring washer 24, a Class A flat washer 25, a standard spring washer 26, a hexagon socket head cap screw 27, a Class A coarse thread hexagonal thin nut 28, an annular crimp end 29, a nylon insulating hose connector 30, and a nylon insulating hose 31.

[0038] The base 1 is installed on the bottom fixing plate 3 by screws. It is made of aluminum alloy and has good electrical conductivity. The base 1 is used to install on the metal flange. The insulating cylinder 4 is made of rubber, with good insulation and high voltage resistance. The inner wall of the insulating cylinder is evenly coated with high voltage silicone grease, which has good arc prevention performance. Its function is to protect the shell of the internal circuit board and resistor device, and at the same time, it has a voltage resistance function. It is connected to the discharge disk 11 through three discharge disk support rods 10. The terminal ball 12 is made of stainless steel and has a spherical structure for crimping high voltage power cables. Its advantage is that it has good anti-static function. The insulating device 14 is made of rubber, with good insulation and high voltage resistance performance. It carries high voltage output cables and its function is to fix the high voltage power supply high voltage output cables and at the same time, it has a cable wear prevention function.

[0039] Nylon insulated hose connector 30 and nylon insulated hose 31 are connected to the top of the equipment room for fixing the focused silicon stack components. Figure 5This is an internal diagram of the focused silicon stack. The focused silicon stack 805 contains 6 sections of soldering boards. Each section contains 4 high-voltage unidirectional diodes, 4 high-voltage resistors, and 4 surge resistors. The 6 sections are connected by metal screws, and the high-voltage diodes, high-voltage resistors, and surge resistors are fixed by soldering. Silicon grease is applied to the solder joints to effectively prevent creepage. After installation, the 6 sections are fixed by the 4 slots of the insulating cylinder.

[0040] like Figure 6 and Figure 7 As shown, the focusing discharge resistor 807 includes a first resistor connecting ball 501, a first high-voltage resistor 502, a brass sleeve 503, a second high-voltage resistor 504, a second resistor connecting ball 505, a resistor connecting ball fixing hole 506, and a resistor fixing port 507. The first high-voltage resistor 502 and the second high-voltage resistor 504 are connected through the brass sleeve 503. The first resistor connecting ball 501 is connected to the first high-voltage resistor 502 by a screw, and the second resistor connecting ball 505 is connected to the second high-voltage resistor 504 by a screw. The resistor fixing port 507 is used to fix it in the screw hole of the high-voltage chamber 804. The functions of the focusing discharge resistor 807 are twofold: first, to form a voltage divider circuit; and second, to discharge the charge on the focusing electrode after the power is turned off, thus protecting the high-voltage power supply.

[0041] After being processed in the ion source stage, doped atoms lose their outer electrons, forming positively charged ions. These ions gain initial velocity under the influence of an electric field, forming an ion beam. During propagation, the ion beam experiences repulsive forces between ions, causing it to diverge. When the instrument is in low-energy mode (i.e., when ion velocities are low), this divergence force acts on each ion, resulting in a longer propagation time and a more pronounced divergence. Because the ions do not move horizontally, there is an angle between the optical path and the center, leading to a significant loss in beam utilization. The velocity of a single ion can be decomposed into horizontal and vertical velocities, and the forces acting on it can also be decomposed into horizontal and vertical forces. Changing the vertical velocity of the ions allows for ion deflection, while changing the horizontal velocity allows for ion focusing. Adjusting the ion velocity involves applying forces in different directions to the ions. By changing the horizontal velocity through the focusing electrode 806, the focusing electrode applies a horizontal force to the ions, increasing their horizontal velocity and achieving the ion beam focusing effect.

[0042] Focusing on the system control process: After system installation, the first high-voltage power supply 803 circuit breaker closes, and power is supplied normally for standby. Figure 9The ion beam enters the focusing electrode electric field from the high-voltage chamber electrode. When the first high-voltage power supply 803 is not turned on, the ion beam experiences no horizontal force F1, only the charge repulsion force F2 between the ion beams. The horizontal velocity of the beam continuously increases, resulting in a large beam divergence, severe angle deflection, and significant beam loss. When the first high-voltage power supply 803 is turned on, the host computer sets a start command and sends it to the first high-voltage power supply 803 through the ADIO controller 2. The first high-voltage power supply 803 applies a negative voltage to the focusing electrode 806. After receiving the voltage, the focusing electrode 806 forms a strong electric field and generates a horizontal electric force on the ions, such as... Figure 10 As shown, the ions accelerate horizontally, increasing their horizontal velocity, thus achieving beam focusing. Simultaneously, the beam current changes at the back end are monitored, and the output voltage of the first high-voltage power supply 803 is slowly adjusted. Once the beam current reaches its maximum value, adjustment stops; this is the maximum beam current value for this menu. Figure 11 As shown, after beam adjustment, it will enter the next region along the centerline. This system has already adjusted the beam to its optimal level for this stage.

[0043] This invention effectively solves the problems of severe beam divergence, large beam spot size, and center position offset caused by the slow speed and long transmission time of low-energy ion beams, thus significantly improving ion utilization. The system consists of key components such as an industrial control computer, an ADIO controller, a high-voltage power supply, and a focusing electrode. It achieves beam focusing by precisely controlling the electric field force to apply horizontal acceleration to the ions. The control system remotely sets parameters via the industrial control computer, and the ADIO controller converts the signals to drive the high-voltage power supply to output a high-precision voltage (accuracy up to 0.01%), forming a focusing lens electric field between the focusing electrode and the ground electrode, increasing the horizontal velocity of the ion beam and converging it to the center line. Technical benefits include: optimized beam focusing ensures smooth entry into the beamline region, maximizing utilization; independent modular design of system components facilitates disassembly, maintenance, and industrialization; dual-loop communication ensures signal reliability and avoids abnormal interruptions; the focusing silicon stack reduces surge current, and the discharge circuit promptly discharges charge, protecting the high-voltage power supply and improving overall stability and operating time; furthermore, the high-voltage lines use flame-retardant and voltage-resistant materials, further enhancing system safety. Overall, this invention achieves fine beam control in low-energy mode, overcoming the shortcomings of existing technologies such as high difficulty in adjustment and low efficiency.

[0044] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should be considered within the scope of protection of the present invention.

Claims

1. A focusing control system for a SiC ion implanter, characterized in that, The device includes an industrial computer (801), an ADIO controller (802), a first high-voltage power supply (803), a high-voltage chamber (804), a focusing silicon stack (805), a focusing electrode (806), a focusing discharge resistor (807), and a mounting flange (808). The industrial computer (801) is connected to the ADIO controller (802), and the ADIO controller (802) is connected to the first high-voltage power supply (803). The first high-voltage power supply (803) is located inside the high-voltage chamber (804) and connected to the focusing silicon stack (805). The focusing silicon stack (805) is connected to the mounting flange (808) through a metal fastener. The focusing electrode (806) is fixed inside the mounting flange (808). One end of the focusing discharge resistor (807) is connected to the mounting flange (808), and the other end is connected to the outer shell of the high-voltage chamber (804).

2. The focusing control system for a SiC ion implanter according to claim 1, characterized in that, The focusing electrode (806) includes a first fixed threaded port (101), a beam transmission optical path hole (102), a second fixed threaded port (103), a third fixed threaded port (104), a first fixing pin (105), and a second fixing pin (106). The first fixed threaded port (101), the second fixed threaded port (103), and the third fixed threaded port (104) are symmetrically distributed to fix the focusing electrode (806). The beam transmission optical path hole (102) is located at the center of the focusing electrode (806) as an ion beam transmission space. The first fixing pin (105) and the second fixing pin (106) are symmetrically distributed to position the focusing electrode (806).

3. The focusing control system for a SiC ion implanter according to claim 1, characterized in that, The focusing discharge resistor (807) includes a first resistor connecting ball (501), a first high-voltage resistor (502), a brass sleeve (503), a second high-voltage resistor (504), a second resistor connecting ball (505), a resistor connecting ball fixing hole (506), and a resistor fixing port (507). The first high-voltage resistor (502) and the second high-voltage resistor (504) are connected through the brass sleeve (503). The first resistor connecting ball (501) is connected to the first high-voltage resistor (502) by a screw. The second resistor connecting ball (505) is connected to the second high-voltage resistor (504) by a screw. The resistor fixing port (507) is used to fix the focusing discharge resistor (807) to the screw hole of the high-voltage chamber (804).

4. The focusing control system for a SiC ion implanter according to claim 1, 2, or 3, characterized in that, The focused silicon stack (805) includes a base (1), a base fixing plate (2), a bottom fixing plate (3), an insulating cylinder (4), a middle fixing plate (5), a top fixing plate (6), an insulating support column (7), a base support block (8), an epoxy support plate (9), a discharge disk support rod (10), a discharge disk (11), a wiring ball (12), a cable lock head seat (13), an insulating device (14), a connecting column (15), and multiple fasteners; the base (1) is installed on the bottom fixing plate (3) by screws, the insulating cylinder (4) is provided with a discharge disk support rod (10) and a discharge disk (11), the wiring ball (12) is used to crimp high-voltage power cables, and the insulating device (14) is used to insulate high-voltage output cables.

5. The focusing control system for a SiC ion implanter according to claim 4, characterized in that, The focused silicon stack (805) integrates multiple welding boards, each board containing multiple high-voltage unidirectional diodes, multiple high-voltage resistors and multiple surge resistors; the multiple boards are connected by metal screws, and the welding points are coated with silicone grease to prevent creepage.

6. The focusing control system for a SiC ion implanter according to claim 1, 2, or 3, characterized in that, The first high-voltage power supply (803) has an output voltage range of -125KV to 0, a current output of 5mA, a power output of 625W, and a voltage accuracy of 0.01%. The ground wire of the first high-voltage power supply (803), one end of the focusing discharge resistor (807), and the grounding point of the high-voltage chamber (804) are interconnected and at the same potential.

7. The focusing control system for a SiC ion implanter according to claim 1, 2, or 3, characterized in that, The focusing control system also includes a charge discharge circuit, comprising an equivalent high-voltage power supply (301), an equivalent resistance R1 (302) for the focusing silicon stack, an equivalent resistance R2 (303) for the focusing discharge resistor, an equivalent ground of the first high-voltage chamber (304), an equivalent focusing electrode (305), and an equivalent ground of the second high-voltage chamber (306); wherein, the equivalent resistance R1 (302) for the focusing silicon stack includes a high-voltage unidirectional diode D1, a surge suppression resistor R11, and a high-voltage resistor R12, for voltage division and surge protection.

8. The focusing control system for a SiC ion implanter according to claim 1, 2, or 3, characterized in that, The fiber optic communication between the industrial control computer (801) and the ADIO controller (802) is a dual-loop system, consisting of a main loop communication and a secondary loop communication.

9. An ion beam focusing method based on the focusing control system of a SiC ion implanter according to any one of claims 1-8, characterized in that, Includes the following steps: The output voltage parameters of the first high-voltage power supply (803) can be remotely set via an industrial computer (801); The ADIO controller (802) converts the setting signal into a control signal and sends it to the first high-voltage power supply (803); The first high-voltage power supply (803) applies a negative high voltage to the focusing electrode (806), forming an electric field between the focusing electrode (806) and the high-voltage ground electrode (205); The ion beam experiences a horizontal force under the influence of an electric field, which increases its horizontal velocity and achieves beam focusing. Monitor the changes in the beam current at the back end and adjust the output voltage of the first high-voltage power supply (803) until the beam current reaches its maximum value; The charge on the focusing electrode (806) is discharged after the power is turned off by the focusing discharge resistor (807).

10. The ion beam focusing method according to claim 9, characterized in that: When adjusting the output voltage of the first high-voltage power supply (803), a slow change method is adopted to avoid beam divergence, and the reliability of signal transmission is ensured through dual-loop optical fiber communication.

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