Switching circuit and electronic equipment

Abstract

The invention provides a switching circuit and electronic equipment, and belongs to the field of power devices. The switching circuit comprises an MOSFET, a transistor, a resistor, a control terminal G, a first electrode terminal S and a second electrode terminal D; a control electrode of the MOSFET is electrically connected with the control terminal G, a first electrode of the MOSFET is electrically connected with the first electrode terminal S, and a second electrode of the MOSFET is electrically connected with a first electrode of the transistor; a control electrode of the transistor is electrically connected with the first electrode terminal S, and a second electrode of the transistor is electrically connected with the second electrode terminal D; one end of the resistor is electrically connected with the first electrode of the MOSFET, and the other end of the resistor is electrically connected with the second electrode of the MOSFET.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of power devices, and in particular, to a switching circuit and an electronic device. BACKGROUND

[0002] In the field of electronic circuit design, a cascode is a circuit topology that connects multiple transistors (such as metal oxide semiconductor field effect transistors (MOSFETs), high electron mobility transistors (HEMTs), etc.) in a specific manner. The cascode is also a kind of switching circuit.

[0003] A switching circuit is provided in the related art, which includes a MOSFET and a transistor (for example, a HEMT), wherein a control electrode of the MOSFET is used as a control terminal of the entire circuit, a first electrode of the MOSFET is used as a first electrode terminal of the entire circuit and is electrically connected to a control electrode of the HEMT, a second electrode of the MOSFET is electrically connected to a first electrode of the HEMT, and a second electrode of the HEMT is used as a second electrode terminal of the entire circuit.

[0004] However, the above switching circuit is prone to voltage distribution problems of the MOSFET and the transistor when working, which affects the reliability of the entire switching circuit. SUMMARY

[0005] Embodiments of the present disclosure provide a switching circuit and an electronic device, which can improve the reliability of the switching circuit. The technical solutions are as follows:

[0006] In one aspect, a switching circuit is provided, which includes a MOSFET, a transistor, a resistor, a control terminal G, a first electrode terminal S, and a second electrode terminal D.

[0007] A control electrode of the MOSFET is electrically connected to the control terminal G, a first electrode of the MOSFET is electrically connected to the first electrode terminal S, and a second electrode of the MOSFET is electrically connected to a first electrode of the transistor.

[0008] A control electrode of the transistor is electrically connected to the first electrode terminal S, and a second electrode of the transistor is electrically connected to the second electrode terminal D.

[0009] One end of the resistor is electrically connected to the first electrode of the MOSFET, and the other end of the resistor is electrically connected to the second electrode of the MOSFET.

[0010] Optionally, the MOSFET is a Trench MOSFET, and the transistor is a depletion-mode HEMT.

[0011] Optionally, the resistance value of the resistor is 1-20 MΩ.

[0012] Optionally, the resistor comprises, in sequence, a substrate, a resistor body layer, a dielectric layer, and a contact layer.

[0013] The two ends of the resistor body layer are respectively connected to two first metal blocks of the contact layer through two through holes of the dielectric layer.

[0014] The two first metal blocks are respectively used for electrically connecting the control electrode and the first electrode of the transistor.

[0015] Optionally, the resistor is integrated in the transistor.

[0016] The substrate and the dielectric layer are respectively two passivation layers in the transistor, and the contact layer is in the same layer as the electrode of the transistor.

[0017] Optionally, the resistor body layer is a titanium nitride layer.

[0018] The shape of the resistor body layer is annular, and one side of the annular shape has a notch.

[0019] Optionally, the two ends of the resistor body layer are respectively connected to two second metal blocks, and the two second metal blocks are respectively electrically connected to the two first metal blocks.

[0020] The two second metal blocks are aluminum blocks or aluminum alloy blocks.

[0021] Optionally, the thickness of the resistor body layer is 20 nm-1 μm.

[0022] Optionally, the two first metal blocks are laminated metal blocks of titanium nitride, aluminum alloy, and titanium nitride.

[0023] Optionally, the thickness of the two first metal blocks is less than 10 μm, and the thickness of each layer of the titanium nitride is 50-500 nm.

[0024] In another aspect, an electronic device is also provided, which comprises the switching circuit according to any one of the preceding aspects.

[0025] The technical scheme provided by the embodiments of the present disclosure has at least the following beneficial effects:

[0026] The switch circuit provided by the embodiments of the present disclosure adds a resistance in parallel to the two ends of the MOSFET on the basis of the MOSFET and the transistor included in the related art, realizes voltage clamping protection of the MOSFET, and can improve the reliability of the switch circuit.

[0027] When the switch circuit is turned off, the MOSFET is in an off state, the MOSFET can be regarded as a high resistance, a resistance is connected in parallel to the MOSFET, the leakage current when the MOSFET is turned off mainly passes through the parallel resistance, the voltage between the drain and the source of the MOSFET is equivalent to the voltage between the two ends of the parallel resistance, and the voltage between the drain and the source of the MOSFET can be reduced and kept stable according to the breakdown voltage of the MOSFET and in combination with a parallel resistance of an appropriate size, so that the reliability of long-time application is ensured; and when a peak voltage is encountered, the voltage between the two ends of the parallel resistance can be clamped, so that the voltage between the drain and the source of the MOSFET is less than the breakdown voltage of the MOSFET to protect the MOSFET and improve the robustness of the device. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative labor.

[0029] Figure 1 is a circuit diagram of a switch circuit provided by the embodiments of the present disclosure;

[0030] Figure 2 is a structural schematic diagram of the resistance in the manufacturing process provided by the embodiments of the present disclosure;

[0031] Figure 3 is a structural schematic diagram of the resistance in the manufacturing process provided by the embodiments of the present disclosure;

[0032] Figure 4 is a structural schematic diagram of the resistance in the manufacturing process provided by the embodiments of the present disclosure;

[0033] Figure 5 is a structural schematic diagram of the resistance in the manufacturing process provided by the embodiments of the present disclosure;

[0034] Figure 6 is a structural schematic diagram of the resistance in the manufacturing process provided by the embodiments of the present disclosure.

[0035] The reference signs are as follows:

[0036] 101: MOSFET;

[0037] 102: transistor;

[0038] 103: resistor;

[0039] G: control terminal;

[0040] S: first electrode terminal;

[0041] D: second electrode terminal;

[0042] 131: substrate;

[0043] 132: resistor body layer;

[0044] 133: dielectric layer;

[0045] 134: contact layer;

[0046] 1330: via hole;

[0047] 1340: first metal block;

[0048] 1321: second metal block;

[0049] 1341: third metal block;

[0050] 1342: fourth metal block. DETAILED DESCRIPTION

[0051] In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the following will further describe the embodiments of the present disclosure in conjunction with the accompanying drawings.

[0052] Unless otherwise defined, technical terms or scientific terms used herein should be understood as having the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs.

[0053] The terms "first", "second", "third" and similar terms used in the patent application specification and claims of the present disclosure do not indicate any order, number or importance, but are only used to distinguish different components.

[0054] Similarly, the terms "one" or "a" or similar terms do not indicate a quantity limitation, but indicate the existence of at least one. The terms "include" or "contain" or similar terms mean that the elements or objects appearing before "include" or "contain" cover the elements or objects listed after "include" or "contain" and their equivalents, and do not exclude other elements or objects.

[0055] The terms "connect" or "connected" or similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms "up", "down", "left", "right", "top", "bottom" and the like are only used to indicate relative positional relationships, and when the absolute positions of the described objects change, the relative positional relationships may also change accordingly.

[0056] In the switching circuit, the voltage is distributed according to the capacitances of the MOSFET and the transistor, and the voltage distributed between the drain and the source of the MOSFET has a great influence on the reliability under long-time application conditions, or the drain end encounters a high voltage spike, and the voltage distributed by the MOSFET is higher than the drain breakdown voltage of the MOSFET, which can cause the MOSFET to break down and fail.

[0057] To this end, the embodiment of the present disclosure provides a switching circuit. Figure 1 is a circuit diagram of a switching circuit provided by the embodiment of the present disclosure. As shown in Figure 1 the switching circuit includes a MOSFET 101, a transistor 102, a resistor 103, a control terminal G, a first electrode terminal S, and a second electrode terminal D.

[0058] The control electrode of the MOSFET 101 is electrically connected to the control terminal G, the first electrode of the MOSFET 101 is electrically connected to the first electrode terminal S, and the second electrode of the MOSFET 101 is electrically connected to the first electrode of the transistor 102.

[0059] The control electrode of the transistor 102 is electrically connected to the first electrode terminal S, and the second electrode of the transistor 102 is electrically connected to the second electrode terminal D.

[0060] One end of the resistor 103 is electrically connected to the first electrode of the MOSFET 101, and the other end of the resistor 103 is electrically connected to the second electrode of the MOSFET 101.

[0061] In the switching circuit provided by the embodiment of the present disclosure, a resistor is added in parallel to the MOSFET on the basis of the MOSFET and the transistor included in the related art, the voltage clamping protection of the MOSFET is realized, and the reliability of the switching circuit can be improved.

[0062] When the switching circuit is turned off, the MOSFET is in an off state, the MOSFET can be regarded as a high resistance, a resistor is connected in parallel to the MOSFET, the leakage current when the MOSFET is turned off mainly passes through the parallel resistor, the voltage between the drain and the source of the MOSFET is equivalent to the voltage across the parallel resistor, according to the breakdown voltage of the MOSFET, and in combination with a parallel resistor of an appropriate size, the voltage between the drain and the source of the MOSFET can be reduced and kept stable, the reliability under long-time application can be ensured, and when a spike voltage is encountered, the voltage across the parallel resistor can be clamped, so that the voltage between the drain and the source of the MOSFET is less than the breakdown voltage of the MOSFET to protect the MOSFET and improve the robustness of the device.

[0063] After the parallel resistance is added, the voltage across the drain and source of the MOSFET decreases from 23V to 17V, and the voltage stress across the drain and source of the MOSFET is reduced, which is more conducive to the reliability of the overall switching circuit.

[0064] In a possible implementation manner of the embodiment of the present disclosure, the control pole is a gate pole, the first electrode is a source electrode, and the second electrode is a drain electrode.

[0065] Correspondingly, the control terminal is a gate terminal, the first electrode terminal is a source terminal, and the second electrode terminal is a drain terminal.

[0066] That is, the gate of the MOSFET 101 is electrically connected to the gate terminal, the source of the MOSFET 101 is electrically connected to the source terminal, and the drain of the MOSFET 101 is electrically connected to the source of the transistor 102.

[0067] The gate of the transistor 102 is electrically connected to the source terminal, and the drain of the transistor 102 is electrically connected to the drain terminal.

[0068] The two ends of the resistor 103 are respectively electrically connected to the source and the drain of the MOSFET 101.

[0069] In another possible implementation manner of the embodiment of the present disclosure, the control pole is a gate pole, the first electrode is a drain electrode, and the second electrode is a source electrode.

[0070] Correspondingly, the control terminal is a gate terminal, the first electrode terminal is a drain terminal, and the second electrode terminal is a source terminal.

[0071] That is, the gate of the MOSFET 101 is electrically connected to the gate terminal, the drain of the MOSFET 101 is electrically connected to the drain terminal, and the source of the MOSFET 101 is electrically connected to the drain of the transistor 102.

[0072] The gate of the transistor 102 is electrically connected to the drain terminal, and the source of the transistor 102 is electrically connected to the source terminal.

[0073] The two ends of the resistor 103 are respectively electrically connected to the drain and the source of the MOSFET 101.

[0074] In a possible implementation manner of the embodiment of the present disclosure, the MOSFET 101 is a Trench Metal Oxide Semiconductor Field Effect Transistor (Trench MOS) 101.

[0075] In the embodiments of the present disclosure, the MOSFET 101 is used to turn off the transistor, and the voltage of the transistor is low, so a Trench MOS tube can be used.

[0076] In the embodiments of the present disclosure, the MOSFET 101 can be a MOSFET with a voltage greater than or equal to 30V, that is, the withstand voltage of the MOSFET 101 is greater than or equal to 30V. Generally, the greater the voltage is, the better, but considering the cost, 30V is usually selected.

[0077] In this implementation, the MOSFET with a withstand voltage of 30V can meet the requirement of using the MOSFET to turn off the first transistor.

[0078] In other possible implementation of the embodiments of the present disclosure, the MOSFET 101 can also be other MOSFETs, which are not limited in the embodiments of the present disclosure.

[0079] In the embodiments of the present disclosure, the MOSFET 101 is in an off state, and the MOSFET 101 can be regarded as a resistance with a size of GΩ. At this time, a resistance with a size of MΩ is connected in parallel, so that the voltage clamping protection described above can be realized.

[0080] For example, the resistance 103 has a resistance value of 1-20MΩ.

[0081] For example, the resistance 103 has a resistance value of 10MΩ.

[0082] In the embodiments of the present disclosure, the transistor 102 can be a high electron mobility transistor (HEMT).

[0083] In a possible implementation of the embodiments of the present disclosure, the transistor 102 is a depletion-mode high electron mobility transistor (D-Mode HEMT).

[0084] In this implementation, since the D-Mode HEMT is a normally open (conductive) device, it is combined with the MOSFET and the resistance to form a switch circuit with a common source and common gate structure.

[0085] In the related art, the transistor 102 is an Enhancement-Mode High Electron Mobility Transistor (E-Mode HEMT). In the implementation manner of the above-mentioned embodiment of the present disclosure, a D-Mode HEMT is adopted as the transistor, that is, the structure of the transistor is adjusted, and through simulation experiments, the overall on-resistance of the circuit is unchanged after the structure adjustment of the transistor and the increase of the resistance and the corresponding capacitor and diode, so as to reduce the influence on the performance of the device.

[0086] In other possible implementation manners of the embodiment of the present disclosure, the transistor 102 can also be other types of transistors, which are not limited in the embodiment of the present disclosure.

[0087] In the embodiment of the present disclosure, since the resistance 103 is connected in parallel between the two ends of the MOSFET, that is, between the control electrode and the first electrode of the transistor 102, the resistance 103 can be integrated in the transistor 102 for the convenience of manufacturing and packaging.

[0088] In the embodiment of the present disclosure, the resistance includes a substrate, a resistance body layer, a dielectric layer and a contact layer which are stacked in sequence; two ends of the resistance body layer are respectively connected with two first metal blocks of the contact layer through two through holes of the dielectric layer; and the two first metal blocks are respectively used for electrically connecting the control electrode and the first electrode of the transistor.

[0089] The resistance structure can be connected with the electrodes of the original transistor 102 structure through the contact layer to realize integration.

[0090] The integrated manner is described in detail below through the manufacturing process of the resistance 103:

[0091] Figure 2 is a structural schematic diagram of the resistance in the manufacturing process provided by the embodiment of the present disclosure. As shown in Figure 2 The first step of resistance manufacturing includes:

[0092] The resistance body layer 132 is manufactured on the substrate 131.

[0093] The material of the resistance body layer 132 is a conductor material or a semiconductor material, such as metal or metal nitride, as long as the material has a large enough sheet resistance to meet the resistance requirement.

[0094] Exemplarily, the resistance body layer 132 can be a titanium nitride layer, and the sheet resistance of titanium nitride is suitable.

[0095] In the embodiment of the present disclosure, the shape of the resistance body layer 132 is annular, and one side of the annular shape has a notch to form the resistance.

[0096] Exemplarily, the shape of the resistance body layer 132 is a rectangular ring, and one side of the rectangular ring is provided with a notch.

[0097] The size and length of the resistance body layer 132 can be designed according to the required resistance size.

[0098] In other examples, the shape of the resistance body layer 132 can also be a circular ring or other non-ring shape.

[0099] Exemplarily, forming the resistance body layer 132 on the substrate 131 can include:

[0100] A layer of titanium nitride is formed by physical sputtering or evaporation, and the sheet resistance of the titanium nitride is generally 20-200 Ω per square, and the thickness is generally thin, for example, 20 nm-1 μm. The titanium nitride with this thickness can ensure that the size of the entire resistance is small, and avoid causing the size of the transistor to be too large when integrated into the transistor.

[0101] Exemplarily, the thickness of the resistance body layer 132 is 50-500 nm.

[0102] The thickness of the resistance body layer 132 depends on the sheet resistance of the resistance material and the deposition and etching capability. Too thick is not conducive to obtaining a larger resistance, and too thin is not conducive to the uniformity of depositing and etching the metal.

[0103] The titanium nitride is processed by photolithography and etching process to form a strip-shaped resistance with a required size and length.

[0104] Figure 3 is a structural schematic diagram of the resistance in the manufacturing process provided by the embodiment of the disclosure. As shown in Figure 3 The second step of manufacturing the resistance includes:

[0105] Two second metal blocks 1321 are manufactured, and the two second metal blocks 1321 are respectively connected to two ends of the resistance body layer 132.

[0106] Since subsequent connection needs to pass through the via of the dielectric layer, the resistance body layer is too thin when etching, which makes it difficult to stop etching of the via dielectric, and the subsequent via connection effect is poor, so two second metal blocks are needed to be manufactured for etching stop.

[0107] Since the previous process is photolithography and etching to form the resistance body layer, the connection metal cannot continue to be formed by this process. Here, the second metal block is formed by evaporation and physical stripping, and the bottom of the second metal block is in contact with the titanium nitride.

[0108] Exemplarily, manufacturing the two second metal blocks 1321 can include:

[0109] First, a photoresist (for example, a negative photoresist) pattern is formed, the photoresist pattern sets a groove at a position where a second metal block is needed to be formed, then aluminum or an aluminum alloy is evaporated, and then the photoresist and the aluminum or the aluminum alloy on the photoresist are stripped, leaving the aluminum or the aluminum alloy in the groove to form the second metal block.

[0110] The aluminum or the aluminum alloy can ensure the electrical connection effect and can also play a blocking role to prevent damage to the main body layer of the resistor.

[0111] The thickness of the second metal block can be 100 nm to 5 μm.

[0112] For example, the thickness of the second metal block is 1 μm.

[0113] Figure 4 is a structural schematic diagram of a resistor in a manufacturing process provided by an embodiment of the disclosure. As shown in Figure 4 the third step of resistor manufacturing includes:

[0114] The medium layer 133 covers the main body layer 132 and the two second metal blocks 1321.

[0115] For example, the medium layer 133 can be a silicon oxide layer, a silicon nitride layer, or a stack of silicon oxide and silicon nitride.

[0116] For example, the thickness of the medium layer 133 can be less than 10 μm.

[0117] For example, manufacturing the medium layer 133 can include:

[0118] The medium layer 133 is formed by chemical vapor deposition.

[0119] Figure 5 is a structural schematic diagram of a resistor in a manufacturing process provided by an embodiment of the disclosure. As shown in Figure 5 the fourth step of resistor manufacturing includes:

[0120] The medium layer 133 is patterned to form two through holes 1330, and the bottoms of the two through holes 1330 are the two second metal blocks 1321.

[0121] For example, patterning the medium layer 133 can include:

[0122] The medium above the two second metal blocks is removed by a photolithography and etching process to form the through holes.

[0123] Figure 6 is a structural schematic diagram of a resistor in a manufacturing process provided by an embodiment of the disclosure. As shown in Figure 6 the fifth step of resistor manufacturing includes:

[0124] The contact layer 134 is made on the dielectric layer 133. The contact layer 134 includes two first metal blocks 1340, which are respectively electrically connected with two ends of the resistance body layer 132 through two through holes 1330 of the dielectric layer 133.

[0125] For example, the contact layer 134 can be a stack of titanium nitride, aluminum alloy and titanium nitride, and the two first metal blocks 1340 are stack metal blocks of titanium nitride, aluminum alloy and titanium nitride.

[0126] In this implementation, the stack is an electrode structure, which can meet the requirements of the resistance contact layer and can also be used as an electrode of the transistor, and the upper and lower titanium nitride layers are used as diffusion barriers of Al.

[0127] In other examples, the contact layer 134 can also include only a stack of titanium nitride and aluminum alloy.

[0128] For example, the thickness of the contact layer 134 is less than 10 μm, and the thickness of each layer of the titanium nitride is 50-500 nm.

[0129] For example, the thickness of each layer of the titanium nitride is 100 nm.

[0130] In this implementation, the thickness of the contact layer needs to consider the wire packaging and the process capability of actual production. Generally, the thicker the better, but too thick will cause the overall device size to be too large.

[0131] For example, the thickness of the contact layer 134 can be 2-6 μm.

[0132] For example, the contact layer 134 is made on the dielectric layer 133 in the same way as the second metal block is made, which is not described here.

[0133] In the embodiment of the present disclosure, the resistance 103 is integrated in the transistor 102, that is, the resistance 103 is made in the process of making the transistor 102, so that the manufacturing process is simple and the connection line of the resistance and the transistor can be simplified.

[0134] In the embodiment of the present disclosure, the resistance can not be limited to which layer of the transistor is made, as long as the subsequent transistor can be connected to the resistance. For example, the resistance can be made between the passivation layers before the electrodes of the transistor are made.

[0135] For example, the transistor includes a stacked substrate, a buffer layer, a channel layer, a barrier layer, a cap layer, a passivation layer and an electrode.

[0136] In the disclosed embodiment, the passivation layer of the transistor can be divided into two layers, which are used as the substrate 131 and the dielectric layer 133 of the resistor respectively, and then the resistor body layer 132 is made between the two layers, and then the contact layer 134 of the resistor is made in the same layer as the electrode of the transistor.

[0137] That is, the substrate 131 and the dielectric layer 133 are respectively two passivation layers in the transistor 102, and the contact layer 134 is in the same layer as the electrode of the transistor 102.

[0138] In this way, the resistor can be integrated in the transistor without affecting the original manufacturing of the transistor.

[0139] In other examples, the resistor body layer 132 can also be arranged between other passivation layers or other insulating layers of the transistor.

[0140] As shown in Figure 6 A1 of the two first metal blocks 1340 can be the control electrode of the transistor, that is, the first metal block A1 and the control electrode of the transistor are directly made together to realize connection.

[0141] Optionally, the contact layer 134 can further include a third metal block 1341 (A3) and a fourth metal block 1342 (A4), wherein the third metal block 1341 can be the first electrode of the transistor, and the fourth metal block 1342 can be the second electrode of the transistor.

[0142] In the structure shown in Figure 6 A2 and A3 are arranged separately and then connected to the second electrode of the MOS. In this way, A2 and A3 are arranged separately instead of integrally, which facilitates the measurement of the resistance value of the resistor.

[0143] In other examples, A2 and A3 can also be integrally arranged and then connected to the second electrode of the MOS.

[0144] The electronic device provided by the embodiment of the present disclosure also includes the switch circuit as shown in any one of Figure 1 or Figure 2 of the drawings.

[0145] The electronic device provided by the embodiment of the present disclosure includes the switch circuit, which adds a resistor in parallel to the two ends of the MOSFET on the basis of the MOSFET and the transistor included in the related art, realizes voltage clamping protection of the MOSFET, and can improve the reliability of the switch circuit.

[0146] Wherein, when the switch circuit is off, the MOSFET is in an off state, the MOSFET can be regarded as a high resistance, the MOSFET is connected in parallel with a resistance, the leakage current when the MOSFET is off mainly passes through the parallel resistance, the voltage between the drain and the source of the MOSFET is equivalent to the voltage across the parallel resistance, according to the breakdown voltage of the MOSFET, combined with a parallel resistance of appropriate size, the voltage between the drain and the source of the MOSFET can be reduced and kept stable, the reliability of long-time application is ensured; and when a sharp peak voltage is encountered, the voltage across the parallel resistance can be clamped, so that the voltage between the drain and the source of the MOSFET is less than the breakdown voltage of the MOSFET to protect the MOSFET, and the robustness of the device is improved.

[0147] In the embodiments of the present disclosure, in addition to the above-mentioned switch circuit, the electronic device also includes a power supply, a user module and other structures, and the embodiments of the present disclosure do not make redundant description here.

[0148] In the embodiments of the present disclosure, the electronic device can be a radio frequency and wireless communication device, a power electronics and energy device, a data and signal processing device, an artificial intelligence and data center device, a medical device, an aerospace, a test and measurement device, etc.

[0149] The above only describes optional embodiments of the present disclosure, and does not limit the present disclosure, and any modification, equivalent replacement, improvement, etc. within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. A switching circuit, characterized by, The switch circuit comprises a MOSFET (101), a transistor (102), a resistor (103), a control terminal G, a first electrode terminal S and a second electrode terminal D; a control electrode of the MOSFET (101) is electrically connected with the control terminal G, a first electrode of the MOSFET (101) is electrically connected with the first electrode terminal S, and a second electrode of the MOSFET (101) is electrically connected with a first electrode of the transistor (102); a control electrode of the transistor (102) is electrically connected with the first electrode terminal S, and a second electrode of the transistor (102) is electrically connected with the second electrode terminal D; one end of the resistor (103) is electrically connected with the first electrode of the MOSFET (101), and the other end of the resistor (103) is electrically connected with the second electrode of the MOSFET (101).

2. The switching circuit of claim 1, wherein The resistor (103) has a resistance of 1-20 MΩ.

3. The switching circuit according to claim 1 or 2, characterized in that, The resistor (103) comprises a substrate (131), a resistor body layer (132), a dielectric layer (133) and a contact layer (134) which are stacked in sequence; two ends of the resistor body layer (132) are respectively connected with two first metal blocks (1340) of the contact layer (134) through two through holes (1330) of the dielectric layer (133); the two first metal blocks (1340) are respectively used for electrically connecting the control electrode and the first electrode of the transistor (102).

4. The switching circuit of claim 3, wherein The resistor (103) is integrated in the transistor (102); the substrate (131) and the dielectric layer (133) are respectively two passivation layers in the transistor (102), and the contact layer (134) is in the same layer with electrodes of the transistor (102).

5. The switching circuit of claim 3, wherein The resistor body layer (132) is a titanium nitride layer; the resistor body layer (132) has a shape of a ring with a notch on one side of the ring.

6. The switching circuit of claim 5, wherein Two second metal blocks (1321) are respectively connected with two ends of the resistor body layer (132), and the two second metal blocks (1321) are respectively electrically connected with the two first metal blocks (1340); the two second metal blocks (1321) are aluminum blocks or aluminum alloy blocks.

7. The switching circuit of claim 3, wherein The resistor body layer (132) has a thickness of 20 nm-1 μm.

8. The switching circuit of claim 3, wherein, The two first metal blocks (1340) are laminated metal blocks of titanium nitride, aluminum alloy and titanium nitride.

9. The switching circuit of claim 8, wherein, The two first metal blocks (1340) have a thickness less than 10 μm, and each layer of the titanium nitride has a thickness of 50-500 nm.

10. An electronic device, comprising: The electronic device comprises the switch circuit according to any one of claims 1-9.

Images