Quartz heat preservation base and manufacturing method thereof
By designing a quartz insulation base with detachable support components and a covering insulation layer, the problems of warping and adhesion of quartz bases at high temperatures were solved, achieving efficient heat treatment and cost savings for wafers.
Patent Information
- Application Number
- CN202511794482.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-02
- Publication Date
- 2026-02-27
AI Technical Summary
Existing quartz substrates are prone to warping under high-temperature cycling, causing the wafer to react or stick to the substrate, affecting the quality of heat treatment, and resulting in waste when replacing them.
A quartz insulation base was designed, which uses a detachable support component and a covering isolation layer, combined with a porous quartz layer and ceramic fiber filling, to ensure wafer point contact and temperature stability, and to adapt to wafers of different diameters.
It reduces the risk of wafer-substrate adhesion, improves heat treatment performance, lowers replacement costs, expands the range of applications, and maintains temperature stability at high temperatures.
Smart Images
Figure CN121586444A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of quartz insulation base technology, and more specifically, to a quartz insulation base and its manufacturing method. Background Technology
[0002] In semiconductor heat treatment processes, the quartz substrate, as a key component supporting the wafer, directly impacts process efficiency and product yield. The oxidation and diffusion processes in heat treatment place high demands on the environment, particularly on the purity of the equipment and the air. The quartz substrate falls into this category; its material is difficult-to-process quartz, requiring a long processing flow and primarily relying on grinding and heat treatment. Inadequate air purification or cleaning can introduce metal cation contamination into the silicon wafer during heat treatment, significantly reducing chip yield.
[0003] Existing quartz substrates are typically fixed in the chamber by several support columns. During the heating and cooling process, the pure quartz material will creep under prolonged high-temperature (usually exceeding 1000°C) cycling, causing the quartz substrate to warp. This makes the wafer and the quartz substrate prone to reaction or adhesion at high temperatures, leading to contamination and a reduction in the quality of the wafer's heat treatment. Furthermore, when the quartz substrate is uneven and needs to be replaced, the entire quartz substrate must be replaced, resulting in a significant amount of waste. Summary of the Invention
[0004] To solve the above-mentioned technical problems, the present invention provides a quartz thermal insulation base and its manufacturing method.
[0005] The technical solution is as follows: A quartz insulation base includes a quartz base body, the quartz base body includes a quartz frame, a through groove is opened at the top of the quartz frame, a support component is detachably installed in the through groove, the support component includes two symmetrically arranged placement parts, the two placement parts are used together for the mounting of the wafer; The placement component has a vertical plate portion with an inclined surface extending towards the through slot. The inclined surface is inclined from the top of the vertical plate portion towards the through slot. Multiple slots are evenly spaced at the top of the inclined surface. The bottom wall of the slot is parallel to the inclined surface and has a contact portion that mates with the outer wall of the wafer. Multiple protrusions that mate with the side wall of the wafer are located on both sides of the slot.
[0006] Furthermore, the bevels, slots, contact areas, and protrusions are all covered with an insulating layer.
[0007] Furthermore, the edges of the slots are chamfered, and partitions are detachably installed at the ends of the two placement components. A mounting cavity for mounting wafers is formed between the two placement components and the partitions.
[0008] Further, the inner wall of the through groove on both sides along the length direction of the placing piece is provided with a plurality of first plug-in grooves, and the vertical plate part is provided with a convex part matched with the first plug-in groove at both ends.
[0009] Further, the through opening is provided in the side wall and the end side wall of the quartz frame body, a plurality of sliding grooves are provided in the inner wall of the through opening of the end side wall of the quartz frame body, a supporting piece is inserted into the sliding groove, the supporting piece is provided with a plurality of second plug-in grooves corresponding to the first plug-in grooves at the top wall, and the supporting piece is used to support the bottom of the placing piece.
[0010] Further, the partition plate is inserted into the clamping groove, and the side wall of the partition plate is provided with a matching part matched with the contact part.
[0011] Further, the quartz frame body is provided with a heat preservation part at the bottom wall, cavities are provided in the bottom wall of the heat preservation part, the side wall of the vertical plate part and the side wall of the partition plate, and a porous quartz layer is arranged in the cavity.
[0012] Further, the porous quartz layer and the cavity are filled with ceramic fibers, and the outer contour of the cavity is provided with a quartz plate.
[0013] A manufacturing method of a quartz heat preservation base, comprising the following steps: S1, melt the quartz sand raw material and pour it into the quartz frame body mold to obtain the quartz frame body; S2, melt the quartz sand raw material and pour it into the placing piece mold to obtain the placing piece; S3, melt the quartz sand raw material and pour it into the partition plate mold to obtain the partition plate; S4, place the porous quartz layer in the corresponding cavity of the quartz frame body, the placing piece and the partition plate, fill the porous quartz layer and the cavity with ceramic fibers, and install the quartz plate at the outer contour of the cavity to seal the cavity; S5, fine burn the quartz frame body, the placing piece and the partition plate, and anneal after fine burning; S6, spray an isolation layer on the outer surface of the placing piece; S7, insert the supporting piece into the sliding groove, and place the convex part of the two placing pieces in the second plug-in groove on the supporting piece 114 through the first plug-in groove, so as to complete the manufacturing of the quartz heat preservation base.
[0014] As described above, the quartz heat preservation base and the manufacturing method thereof have the following beneficial effects: The cooperation of the convex points, the clamping grooves and the contact portions makes the outer wall of the wafer form point contact with the contact portions when the wafer is installed, that is, the wafer and the contact portions only have two point contacts, and the two sides of the wafer and the convex points also form point contact, so that the actual contact area of the wafer and the placing piece is reduced, the risk of adhesion between the wafer and the placing piece is reduced, the actual contact area of the wafer and the heat treatment is increased, and the heat treatment effect of the wafer is improved. The problem that the wafer and the quartz base are reacted or adhered under high temperature due to the warping of the quartz base caused by the creep of the pure quartz material under long-time high-temperature (usually more than 1000 DEG C) circulation, so that the wafer is polluted and the heat treatment quality of the wafer is reduced is avoided.
[0015] The detachable arrangement of the supporting assembly and the quartz frame body makes it unnecessary to replace the whole quartz base body when the contact portion or the inner wall of the clamping groove of any placing piece needs to be replaced due to unevenness after long-time repeated use, so that the use cost is saved.
[0016] The arrangement of the inclined surface, the clamping groove and the contact portion makes the contact portions on the two placing pieces be able to place wafers with different diameters without adjustment within a certain range, so that the application range and the practicability of the quartz base body are improved.
[0017] The isolation layer, that is, the amorphous silicon carbide coating, is covered on the inclined surface, the clamping groove, the contact portion and the convex point, so that the quartz base body is prevented from releasing impurities to the wafer under high temperature.
[0018] The ceramic fibers are filled in the porous quartz layer and the cavity, so that the heat release process of the partition plate, the heat preservation portion and the vertical plate portion is slowed down, the temperature in the installation cavity is maintained in a narrow range, a certain heat preservation effect is achieved, and the partition plate, the heat preservation portion and the vertical plate portion are more stable in the high-temperature environment. BRIEF DESCRIPTION OF DRAWINGS
[0019] Figure 1 It is a three-dimensional schematic view of the whole component of the application; Figure 2 It is a three-dimensional schematic view of the quartz frame body and the supporting assembly of the application; Figure 3 It is an exploded three-dimensional schematic view of the quartz frame body and the supporting assembly of the application; Figure 4 It is a three-dimensional schematic view of the quartz frame body of the application; Figure 5 It is a top view sectional schematic view of the partition plate of the application; Figure 6 It is a side view sectional schematic view of the partition plate of the application; Figure 7 It is a three-dimensional schematic view of the placing piece of the application; Figure 8 Figure 1 is a schematic view of the side section of the card slot of the present application.
[0020] In the present application, the reference signs are as follows: 100, quartz base body; 110, quartz frame body; 111, through slot; 112, first plug-in slot; 113, sliding slot; 114, supporting piece; 115, second plug-in slot; 120, heat preservation part; 200, supporting assembly; 210, placing piece; 211, vertical plate part; 2111, protruding part; 212, inclined surface; 213, clamping slot; 214, contact part; 215, protruding point; 216, chamfered part; 300, partition plate; 310, quartz plate; 320, cavity; 330, porous quartz layer; 340, ceramic fiber. DETAILED DESCRIPTION
[0021] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.
[0022] The embodiments provided by the present application will be described in detail as follows: As Figures 1 to 8 shown, a quartz heat preservation base includes a quartz base body 100, the quartz base body 100 includes a quartz frame body 110, the quartz frame body 110 is provided with a through slot 111 at the top, and a supporting assembly 200 is detachably installed in the through slot 111, the supporting assembly 200 includes two symmetrically arranged placing pieces 210, and the two placing pieces 210 are used for mounting a wafer. The placing piece 210 has a vertical plate part 211, the vertical plate part 211 has an inclined surface 212 extending towards the through slot 111, the inclined surface 212 is arranged obliquely from the top of the vertical plate part 211 towards the through slot 111, a plurality of clamping slots 213 are arranged at the top of the inclined surface 212 at equal intervals, the bottom wall of the clamping slot 213 is parallel to the inclined surface 212, and the clamping slot 213 is provided with a contact part 214 matched with the outer wall of the wafer, and the two side walls of the clamping slot 213 are provided with a plurality of protruding points 215 matched with the side wall of the wafer.
[0023] It should be noted that the convex point 215, the clamping groove 213 and the contact part 214 are matched, and the contact part 214 is also a slope structure facing the direction of the through groove 111, so that when the wafer is installed, the circular wafer outer wall forms a point contact with the contact part 214, that is, the wafer and the contact part 214 only have two point contacts, and the wafer on both sides also forms a point contact with the convex point 215, thereby reducing the actual contact area between the wafer and the placing piece 210, reducing the risk of adhesion between the wafer and the placing piece 210, and improving the actual contact area between the wafer and the heat treatment, thereby improving the heat treatment effect of the wafer. Avoid the problem that the pure quartz material creeps and causes the quartz base to warp under the high temperature cycle of more than 1000℃ for a long time, so that the wafer and the quartz base react or adhere under high temperature, causing the wafer to be contaminated and the heat treatment quality of the wafer to be reduced.
[0024] It can be understood that the supporting assembly 200 and the quartz frame body 110 are detachably arranged, and when the inner wall of the contact part 214 or the clamping groove 213 of any placing piece 210 is uneven and needs to be replaced after long-term repeated use, only the corresponding placing piece 210 needs to be replaced, without the need to replace the entire quartz base body 100, thereby saving the use cost.
[0025] In addition, through the arrangement of the slope 212, the clamping groove 213 and the contact part 214, the contact parts 214 on the two placing pieces 210 can be placed without adjustment within a certain range, that is, the wafer of different diameters can be placed, thereby improving the application range and practicability of the quartz base body 100.
[0026] The slope 212, the clamping groove 213, the contact part 214 and the convex point 215 are all covered with an isolation layer.
[0027] It should be noted that the isolation layer can be a high-purity, dense amorphous silicon carbide coating.
[0028] It can be understood that the slope 212, the clamping groove 213, the contact part 214 and the convex point 215 are all covered with an isolation layer, that is, an amorphous silicon carbide coating. The amorphous silicon carbide coating acts as a barrier layer to prevent the quartz base from releasing impurities to the wafer under high temperature.
[0029] As shown in Figures 1 to 2 and Figure 7 The edge of the clamping groove 213 has a chamfered part 216, and the end of the two placing pieces 210 is detachably mounted with a partition plate 300, and the installation cavity for installing the wafer is formed between the two placing pieces 210 and the partition plate 300.
[0030] It should be noted that through the arrangement of the chamfered part 216 at the edge of the clamping groove 213, the installation of the wafer can be facilitated, the stress concentration can be reduced, and the wafer can be prevented from being mechanically damaged by the placing piece 210 during the installation or disassembly of the wafer.
[0031] As shown in Figures 2 to 4 , the through groove 111 is provided with a plurality of first insertion grooves 112 on both sides of the inner wall along the length direction of the placing piece 210, and the vertical plate part 211 has a convex part 2111 at both ends matched with the first insertion grooves 112.
[0032] It should be noted that, by the setting of the first insertion grooves 112 and the convex part 2111, the spacing between the two placing pieces 210 can be adjusted to adapt to wafers of different diameters.
[0033] As shown in Figures 2 to 4 , the through groove 111 is provided with a plurality of first insertion grooves 112 on both sides of the inner wall along the length direction of the placing piece 210, and the vertical plate part 211 has a convex part 2111 at both ends matched with the first insertion grooves 112.
[0034] It should be noted that, by the setting of the first insertion grooves 112 and the convex part 2111, the spacing between the two placing pieces 210 can be adjusted to adapt to wafers of different diameters.
[0035] Specifically, in use, the user adjusts the support piece 114 according to the diameter of the placed wafer, and inserts it into the sliding groove 113 at a height corresponding to the diameter of the wafer, and then places the convex part 2111 of the two placing pieces 210 through the first insertion groove 112 into the second insertion groove 115 on the support piece 114 according to the diameter of the placed wafer, that is, the assembly is completed, the wafer is placed in the clamping groove 213 in turn, and after all the wafers are placed, the partition plate 300 is inserted into the outermost clamping groove 213 at both ends of the placing piece 210, and the quartz base body 100 with wafers is placed into the heat treatment equipment, which is simple to operate and can be adjusted according to wafers of different diameters, further improving the use range and practicality of the quartz base body 100.
[0036] As shown in Figure 1 and Figures 4 to 5 , the partition plate 300 is inserted into the clamping groove 213, and the side wall of the partition plate 300 has a matching part matched with the contact part 214.
[0037] It should be noted that, since the contact portion 214 is arranged obliquely, the contact portions 214 on the two symmetrical placing pieces 210 form a V-shaped arrangement as a whole, and the matching portion on the side wall of the partition plate 300 is arranged in cooperation with the contact portion 214, so that even if the spacing between the two placing pieces 210 is adjusted, the matching portion of the partition plate 300 can always form a V-shaped cooperation with the contact portions 214 on the two symmetrical placing pieces 210 as a whole, without the need to replace the partition plate 300.
[0038] Specifically, the contact portions 214 on the two symmetrical placing pieces 210 form a V-shaped arrangement as a whole, so that when a wafer of any diameter is placed in the clamping groove 213 between the two placing pieces 210, as shown in the state Figure 8 The outer wall of the wafer and the corresponding contact portion 214 have a tangent point, so that when the diameter of the wafer is greater than the spacing between the bottoms of the two contact portions 214 and the diameter of the wafer is less than the spacing between the tops of the two contact portions 214, the spacing between the two placing pieces 210 can be adjusted within a certain range.
[0039] The bottom wall of the quartz frame body 110 has a heat preservation portion 120, the bottom wall of the heat preservation portion 120, the side wall of the vertical plate portion 211 and the side wall of the partition plate 300 are all provided with cavities 320, and the cavities 320 are provided with a porous quartz layer 330 inside.
[0040] The cavities 320 are provided with quartz plates 310 on the outside profile.
[0041] It should be noted that, by filling the porous quartz layer 330 and the cavities 320 with ceramic fibers 340, the heat dissipation process of the partition plate 300, the heat preservation portion 120 and the vertical plate portion 211 is slowed down, so that the temperature in the mounting cavity fluctuates within a narrow range, thereby achieving a certain heat preservation effect, and at the same time, the porous quartz layer 330 is arranged in a honeycomb shape, which increases the structural strength and makes the partition plate 300, the heat preservation portion 120 and the vertical plate portion 211 more stable in a high-temperature environment.
[0042] A manufacturing method of a quartz heat preservation base, comprising the following steps: S1, pouring quartz sand raw materials into a quartz frame body 110 mold after melting to obtain a quartz frame body 110; S2, pouring quartz sand raw materials into a placing piece 210 mold after melting to obtain a placing piece 210; S3, pouring quartz sand raw materials into a partition plate 300 mold after melting to obtain a partition plate 300; S4, placing the porous quartz layer 330 in the cavity 320 corresponding to the quartz frame body 110, the placing piece 210 and the partition plate 300, and filling the ceramic fiber 340 in the porous quartz layer 330 and the cavity 320, and sealing the cavity 320 by installing the quartz plate 310 at the outer profile of the cavity 320, Specifically, the quartz plate 310 is fused with the quartz frame body 110, the placing piece 210 and the partition plate 300 at high temperature by adopting a quartz argon arc welding (TIG welding) or a hydrogen oxygen flame fusion welding process, so as to realize the sealing of the cavity 320. S5, fine burning the quartz frame body 110, the placing piece 210 and the partition plate 300, and annealing after fine burning to release the thermal stress generated in the melting, cooling and welding process of the quartz frame body 110, the placing piece 210 and the partition plate 300; S6, spraying an isolation layer on the outer surface of the placing piece 210; S7, inserting the supporting piece 114 into the sliding groove 113, and then placing the convex part 2111 of the two placing pieces 210 in the second insertion slot 115 on the supporting piece 114 through the first insertion slot 112, so as to complete the manufacturing of the quartz heat preservation base.
[0043] The above only describes the preferred embodiments of the present application, and the protection scope of the present application is not limited to the above-mentioned embodiments, and any technical scheme falling within the idea of the present application belongs to the protection scope of the present application. It should be noted that, for ordinary skilled in the art, some improvements and decorations without departing from the principle of the present application are also considered as the protection scope of the present application.
[0044] In the description of the present application, it should be understood that the terms "upper", "lower", "left", "right" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements indicated must have a specific orientation, and a specific orientation structure and operation, therefore, it cannot be understood as a limitation on the present application. In addition, "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" can explicitly or implicitly include one or more features. In the description of the present application, unless otherwise specified, the meaning of "multiple" is two or more.
[0045] In the description of the application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" and the like should be understood in a broad sense, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be mechanically connected, or electrically connected; can be directly connected, or indirectly connected through an intermediate medium, or can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0046] The above describes one embodiment of the present application in detail, but the content described is only a preferred embodiment of the present application, and cannot be considered as limiting the scope of the present application. Any equivalent changes and improvements made within the scope of the present application should still be attributed to the patent coverage of the present application.
Claims
1. A quartz thermal insulation base, characterized in that, The quartz base body (100) includes a quartz frame (110), and a through slot (111) is provided at the top of the quartz frame (110). A support assembly (200) is detachably installed in the through slot (111). The support assembly (200) includes two symmetrically arranged placement pieces (210), which are used together for wafer mounting. The placement component (210) has a vertical plate portion (211), the vertical plate portion (211) has an inclined surface (212) extending towards the through groove (111), the inclined surface (212) is inclined from the top of the vertical plate portion (211) towards the through groove (111), and a plurality of slots (213) are provided at equal intervals at the top of the inclined surface (212). The bottom wall of the slot (213) is parallel to the inclined surface (212) and has a contact portion (214) that mates with the outer wall of the wafer. Both sides of the slot (213) have a plurality of protrusions (215) that mate with the side wall of the wafer.
2. The quartz insulation base according to claim 1, characterized in that, The inclined surface (212), the slot (213), the contact part (214) and the protrusion (215) are all covered with an insulating layer.
3. A quartz thermal insulation base according to claim 2, characterized in that, The card slot (213) has a chamfered portion (216) at the edge, and the two placement pieces (210) are detachably mounted with partitions (300) at their ends. A mounting cavity for mounting wafers is formed between the two placement pieces (210) and the partitions (300).
4. A quartz thermal insulation base according to claim 3, characterized in that, The through groove (111) has multiple first insertion grooves (112) on both sides of the inner wall along the length of the placement part (210), and the vertical plate part (211) has protrusions (2111) at both ends that cooperate with the first insertion grooves (112).
5. A quartz thermal insulation base according to claim 4, characterized in that, The quartz frame (110) has openings on both sides and both ends. Multiple grooves (113) are provided on the inner walls of the openings on both ends of the quartz frame (110). Support members (114) are inserted into the grooves (113). Multiple second insertion grooves (115) corresponding to the multiple first insertion grooves (112) are provided on the top wall of the support member (114). The support member (114) is used to support the bottom of the placement member (210).
6. A quartz thermal insulation base according to claim 5, characterized in that, The partition (300) is inserted into the slot (213), and the side wall of the partition (300) has a mating part that mates with the contact part (214).
7. A quartz thermal insulation base according to claim 6, characterized in that, The bottom wall of the quartz frame (110) has an insulation part (120). The bottom wall of the insulation part (120), the side wall of the vertical plate part (211) and the side wall of the partition (300) are all provided with cavities (320). A porous quartz layer (330) is provided inside the cavity (320). The porous quartz layer (330) is distributed in a honeycomb pattern.
8. A quartz thermal insulation base according to claim 7, characterized in that, Both the porous quartz layer (330) and the cavity (320) are filled with ceramic fibers (340), and quartz plates (310) are provided on the outer contour of the cavity (320).
9. The method for manufacturing the quartz insulation base according to any one of claims 1-8, characterized in that, Includes the following steps: S1. After melting the quartz sand raw material, pour it into the quartz frame (110) mold to obtain the quartz frame (110). S2. Melt the quartz sand raw material and pour it into the mold of the placement part (210) to obtain the placement part (210). S3. After melting the quartz sand raw material, pour it into the partition plate (300) mold to obtain the partition plate (300). S4. A porous quartz layer (330) is placed in the cavity (320) corresponding to the quartz frame (110), the placement piece (210) and the partition (300), and ceramic fibers (340) are filled in the porous quartz layer (330) and the cavity (320). A quartz plate (310) is installed on the outer contour of the cavity (320) to seal the cavity (320). S5. The quartz frame (110), the placement piece (210) and the partition (300) are finely fired and then annealed. S6. Apply an isolation layer to the outer surface of the placement part (210); S7. Insert the support (114) into the slide (113), and then place the protrusions (2111) of the two placement parts (210) into the second insertion groove (115) on the support (114) through the first insertion groove (112) to complete the production of the quartz insulation base.