Method for polishing semiconductor

Abstract

The grinding treatment method of the semiconductor comprises the following steps: setting a plasma forming area on the surface of the semiconductor in a semiconductor grinding process; applying an electric field with a predetermined frequency to the plasma forming area; and introducing nitrogen gas into the plasma formation region to form a nitride layer on the surface of the semiconductor. The method is simple, efficient and low in cost, the temperature of the grinding surface of the semiconductor can be effectively reduced, the heat effect possibly causing material performance change is reduced, the workpiece reliability is improved, and the service life of a semiconductor device is prolonged.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing, and more particularly to a method for grinding semiconductors. Background Technology

[0002] Grinding is a common process in the semiconductor manufacturing industry. Under certain pressure, a grinding disc rotates at low speed to grind or polish semiconductor materials to achieve the required parameters. However, the temperature rise caused during grinding has a significant impact on semiconductor materials. For example, high temperatures increase thermal stress in the material, thus affecting semiconductor devices. High temperatures can damage the structure of semiconductor devices and even cause thermal expansion of the wafer, affecting the size and shape of the final product, reducing reliability and lifespan.

[0003] Several methods exist to reduce the surface temperature during semiconductor polishing. For example, coolants and temperature regulators are used in the polishing process. However, these cooling methods are not ideal and can easily cause uneven heating and cooling of the polished surface, thus affecting the polishing effect.

[0004] Therefore, it is necessary to provide an improved semiconductor polishing method to overcome the above-mentioned defects. Summary of the Invention

[0005] The purpose of this invention is to provide an improved method for polishing semiconductors. This method is simple, efficient, and low-cost, and can effectively reduce the temperature of the polished surface of the semiconductor, reduce the thermal effects that may cause changes in material properties, improve workpiece reliability, and extend the service life of semiconductor devices.

[0006] To achieve the above objectives, the semiconductor polishing method of the present invention includes the following steps:

[0007] During the semiconductor polishing process, a plasma formation region is set on the surface of the semiconductor;

[0008] Apply an electric field of a predetermined frequency to the plasma forming region; and

[0009] Nitrogen gas is introduced into the plasma forming region to form a nitride layer on the surface of the semiconductor.

[0010] Compared with existing technologies, the method of this invention applies an electric field of a predetermined frequency to the plasma formation region on the semiconductor surface, and introduces nitrogen gas into the plasma formation region under this high electric field to form a nitride layer on the semiconductor surface. During the grinding process, the high temperature generated is transferred to the semiconductor substrate via thermal conduction through the nitride layer on the semiconductor surface, thereby achieving efficient heat dissipation through a heat sink on the semiconductor substrate. Therefore, this grinding method achieves low-temperature grinding, which can effectively reduce the thermal stress of the semiconductor material, avoid the impact of thermal stress on semiconductor devices, and reduce stress-induced cracking and damage. Furthermore, low-temperature grinding can lower the surface temperature of the workpiece, reducing thermal effects that may cause changes in material properties and maintaining the original properties of the semiconductor material. Simultaneously, low-temperature grinding technology can reduce adhesion during the grinding process, reduce grinding dust contamination of the grinding surface, and help improve processing accuracy and surface quality. Moreover, low-temperature grinding can reduce particle size increase and deformation, which is beneficial for reducing lattice breakage and lattice slip, improving the reliability and lifespan of the workpiece. Therefore, this processing method is simple, efficient, and low-cost, with significant advantages, and is suitable for widespread industrial application.

[0011] As one example, the predetermined frequency is 150-250kHz.

[0012] As an example, the thickness of the nitride layer is 30-60 nanometers.

[0013] As one embodiment, the electric field of the predetermined frequency is a high-frequency electric field formed by applying a high-frequency voltage between electrodes or between an electrode and ground.

[0014] As one embodiment, the high-frequency electric field is generated by a capacitively coupled antenna or an inductively coupled antenna.

[0015] As one embodiment, the nitrogen gas is introduced into the plasma forming region via a gas injector. Detailed Implementation

[0016] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific implementation methods of this application are described in detail below with reference to some embodiments. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0017] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0018] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0019] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0020] The semiconductor polishing method of the present invention will be further described below with reference to embodiments, but this does not limit the present invention. The method of the present invention aims to provide a semiconductor polishing method that is simple, efficient, and low in cost. It can effectively reduce the temperature of the polished surface of the semiconductor, reduce thermal effects that may cause changes in material properties, improve workpiece reliability, and extend the service life of semiconductor devices.

[0021] In one embodiment of the semiconductor polishing method of the present invention, the following steps are included:

[0022] During the semiconductor polishing process, a plasma formation region is set on the surface of the semiconductor;

[0023] Apply an electric field of a predetermined frequency to the plasma forming region; and

[0024] Nitrogen gas is introduced into the plasma forming region to form a nitride layer on the surface of the semiconductor.

[0025] In the method of this invention, an electric field of a predetermined frequency is applied to the plasma formation region on the semiconductor surface, and nitrogen gas is introduced into the plasma formation region under this high electric field to form a nitride layer on the semiconductor surface. During the grinding process, the high temperature generated is transferred to the semiconductor substrate via thermal conduction through the nitride layer on the semiconductor surface, thereby achieving efficient heat dissipation through a heat sink on the semiconductor substrate. Therefore, this grinding method achieves low-temperature grinding, which can effectively reduce the thermal stress of the semiconductor material, avoid the impact of thermal stress on semiconductor devices, and reduce stress-induced cracking and damage. Furthermore, low-temperature grinding can lower the surface temperature of the workpiece, reducing thermal effects that may cause changes in material properties and maintaining the original properties of the semiconductor material. Simultaneously, low-temperature grinding technology can reduce adhesion during the grinding process, reduce grinding dust contamination of the grinding surface, and help improve processing accuracy and surface quality. Moreover, low-temperature grinding can reduce particle size increase and deformation, which is beneficial for reducing lattice breakage and lattice slip, improving the reliability and lifespan of the workpiece. Therefore, this processing method is simple, efficient, and low-cost, with significant advantages, and is suitable for widespread industrial application.

[0026] In a specific embodiment, firstly, during the semiconductor polishing process, a plasma formation region is formed on the surface of the semiconductor. Then, a predetermined high-frequency electric field is applied to the plasma formation region; for example, the frequency of this electric field is 150-250 kHz, preferably 200 kHz. Specifically, this predetermined high-frequency electric field is a high-frequency electric field generated by applying a high-frequency voltage between electrodes or between an electrode and ground. For example, it can be generated by a capacitively coupled antenna or an inductively coupled antenna.

[0027] A gas injector is disposed on the side of the plasma formation region to introduce a raw material gas into the plasma formation region. In this embodiment, the raw material gas includes nitrogen gas. Nitrogen gas is introduced through the gas injector to form a nitride layer in the plasma formation region. That is, a nitride layer is formed on the surface of the semiconductor, which can resist the heat generated by polishing and reduce the surface temperature. In one embodiment, the thickness of the nitride layer is between 30 and 60 nanometers, preferably 45 nanometers.

[0028] Heat from the nitride layer is transferred to the substrate via thermal conduction on the semiconductor surface. The heat generated during grinding can then be dissipated through a heat sink on the semiconductor substrate.

[0029] In summary, this invention applies an electric field of a predetermined frequency to the plasma formation region on the semiconductor surface, and introduces nitrogen gas into the plasma formation region under this high electric field to form a nitride layer on the semiconductor surface. During the grinding process, the high temperature generated is transferred to the semiconductor substrate via thermal conduction through the nitride layer on the semiconductor surface, thereby achieving efficient heat dissipation through a heat sink on the semiconductor substrate. Therefore, this grinding method achieves low-temperature grinding, which can effectively reduce the thermal stress of the semiconductor material, avoid the impact of thermal stress on semiconductor devices, and reduce stress-induced cracking and damage. Furthermore, low-temperature grinding can lower the surface temperature of the workpiece, reducing thermal effects that may cause changes in material properties and maintaining the original properties of the semiconductor material. Simultaneously, low-temperature grinding technology can reduce adhesion during the grinding process, reduce grinding dust contamination of the grinding surface, and help improve processing accuracy and surface quality. Moreover, low-temperature grinding can reduce particle size increase and deformation, which is beneficial for reducing lattice breakage and lattice slip, improving the reliability and lifespan of the workpiece. Therefore, this processing method is simple, efficient, and low-cost, with significant advantages, and is suitable for widespread industrial application.

[0030] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any equivalent variations made in accordance with the claims of the present invention are still within the scope of the present invention.

Claims

1. A method for polishing semiconductors, characterized in that, Includes the following steps: During the semiconductor polishing process, a plasma formation region is set on the surface of the semiconductor; An electric field of a predetermined frequency is applied to the plasma forming region; as well as Nitrogen gas is introduced into the plasma forming region to form a nitride layer on the surface of the semiconductor.

2. The semiconductor polishing method as described in claim 1, characterized in that, The predetermined frequency is 150-250kHz.

3. The semiconductor polishing method as described in claim 1, characterized in that, The thickness of the nitride layer is 30-60 nanometers.

4. The semiconductor polishing method as described in claim 1, characterized in that, The predetermined frequency electric field is a high-frequency electric field generated by applying a high-frequency voltage between electrodes or between an electrode and ground.

5. The semiconductor polishing method as described in claim 4, characterized in that, The high-frequency electric field is generated by a capacitively coupled antenna or an inductively coupled antenna.

6. The semiconductor polishing method as described in claim 1, characterized in that, The nitrogen gas is introduced into the plasma formation region through a gas injector.