Semiconductor process chamber

Abstract

The invention provides a semiconductor process chamber which comprises a chamber body and a gas inlet component, the chamber body is provided with a first protective gas channel, the gas inlet component is provided with a first gas inlet channel and a second gas inlet channel, the first gas inlet channel is communicated with the interior of the chamber body and used for conveying reaction gas into the chamber body, and the second gas inlet channel is communicated with the interior of the chamber body. The second gas inlet channel communicates with the interior of the cavity body through a first protection gas channel and is used for conveying first protection gas into the cavity body through the first protection gas channel, and the first protection gas channel is used for enabling the first protection gas conveyed into the cavity body to be distributed between the inner peripheral wall of the cavity body and reaction gas in the cavity body. According to the semiconductor process chamber provided by the invention, on one hand, the maintenance period can be prolonged, the normal operation time can be prolonged, the maintenance cost can be reduced, and on the other hand, the possibility of abnormal particle conditions can be reduced, so that on one hand, the production cost can be reduced, and on the other hand, the stability of semiconductor process results can be improved, and the process yield can be improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically, to a semiconductor process chamber. Background Technology

[0002] Metal-organic chemical vapor deposition (MOCVD) technology can exhibit excellent step coverage and resistivity characteristics in the thin film fabrication process of semiconductor devices where critical dimensions are constantly decreasing and channel aspect ratios are constantly increasing.

[0003] However, in current MOCVD process chambers, a coating is formed on the inner periphery of the chamber during the MOCVD process. As the number of processes increases, the adhesion of the coating gradually decreases, resulting in particle problems caused by coating peeling off, which leads to a shorter maintenance cycle and higher production costs. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process chamber that can, on the one hand, increase maintenance cycle, increase uptime and reduce maintenance costs, and on the other hand, reduce the possibility of particle abnormalities. Thus, it can reduce production costs and improve the stability of semiconductor process results and improve process yield.

[0005] To achieve the objectives of this invention, a semiconductor process chamber is provided, comprising a chamber body and an air intake component;

[0006] The chamber body is provided with a first protective air passage, and the air intake component is provided with a first air intake passage and a second air intake passage;

[0007] The first air inlet is connected to the chamber body and is used to deliver the reaction gas into the chamber body;

[0008] The second air inlet is connected to the chamber body through the first protective air inlet, and is used to deliver the first protective gas into the chamber body through the first protective air inlet;

[0009] The first protective gas channel is used to distribute the first protective gas delivered to the chamber body between the inner peripheral wall of the chamber body and the reaction gas in the chamber body.

[0010] Optionally, the air intake component includes a first air intake pipe and a second air intake pipe;

[0011] The first air intake pipe penetrates the top of the chamber body and has the first air intake passage;

[0012] The second air intake pipe is sleeved outside the first air intake pipe, and the annular space between the second air intake pipe and the first air intake pipe serves as the second air intake passage.

[0013] Optionally, the first protective airway includes a first annular airway, a plurality of first diversion airways, and a plurality of air inlet channels;

[0014] The first annular air passage is disposed circumferentially within the peripheral wall of the chamber body and surrounds the connection between the first air inlet and the chamber body.

[0015] Multiple first diversion channels are arranged at circumferential intervals along the first annular channel, and the first annular channel is connected to the second intake channel through the multiple first diversion channels;

[0016] The plurality of air inlet channels are arranged circumferentially along the first annular air channel and are higher than the support component for supporting the wafer in the chamber body. The first annular air channel is connected to the chamber body through the plurality of air inlet channels.

[0017] Optionally, the intake component may further include an ionization element and a filter element;

[0018] The ionization element is configured in conjunction with the second air inlet to ionize the first protective gas;

[0019] The second air intake is connected to the first protective air intake through the filter element, which is used to filter the charged particles generated by the ionization of the first protective gas.

[0020] Optionally, the ionization device includes a radio frequency coil, the first air intake pipe is made of an insulating material, the second air intake pipe is made of a conductive material, the radio frequency coil is wrapped around the second air intake pipe and is used for electrical connection with a radio frequency source.

[0021] Optionally, the filter element includes a conductive filter screen, which is annularly disposed corresponding to the second air intake channel and grounded, and located between the second air intake channel and the first protective air channel.

[0022] Optionally, the air intake component further includes an air source pipe, through which the second air intake passage is connected to the first protective air source.

[0023] Optionally, the air intake component further includes a heating element, which is configured in conjunction with the air source pipe to heat the first protective gas flowing through the air source pipe.

[0024] Optionally, the ionization energy of the first protective gas is higher than that of the reactant gas.

[0025] Optionally, the semiconductor process chamber further includes a support component disposed within the chamber body. The support component has a support surface for supporting a wafer and a back surface opposite to the support surface. A second protective gas channel is disposed within the support component, which is used to deliver a second protective gas from the back surface of the support component to the back surface of the support component.

[0026] Optionally, the supporting component includes a support member and a bearing member. The support member is connected to the bottom of the chamber body, and the bearing member is disposed on the support member. The bearing member has the bearing surface and the back surface of the bearing component. The second protective airway includes a main airway, a second annular airway, a plurality of second branch airways, and a plurality of outlet channels. The main airway is disposed within the support member and is used to communicate with the second protective air source. The second annular airway is disposed circumferentially along the bearing member and surrounds the main airway. The plurality of second branch airways are spaced apart circumferentially along the second annular airway. The second annular airway communicates with the main airway through the plurality of second branch airways. The plurality of outlet channels are spaced apart circumferentially along the second annular airway, and the outlet end of the outlet channel is located on the back surface of the bearing member.

[0027] Optionally, the air outlet is inclined, and the air outlet end of the air outlet is closer to the edge of the carrier than the air inlet end of the air outlet.

[0028] Optionally, the chamber body is further provided with a plurality of exhaust channels communicating with the chamber body. The semiconductor process chamber also includes an air extraction component. The plurality of exhaust channels are evenly spaced along the circumference of the chamber body within the peripheral wall of the chamber body and are respectively connected to the air extraction component. The air extraction component is used to extract gas from the chamber body through the plurality of exhaust channels.

[0029] Optionally, the air inlet end face of the exhaust duct is lower than or flush with the bottom surface of the support component used to support the wafer, and the air outlet end face of the exhaust duct is located on the bottom surface of the chamber body.

[0030] Optionally, the chamber body is further provided with an exhaust groove, which is annular and disposed along the circumference of the chamber body on the peripheral wall of the chamber body, with the groove opening facing into the chamber body, and the plurality of exhaust channels communicating with the chamber body through the exhaust groove.

[0031] Optionally, the peripheral wall of the chamber body is further provided with a wafer transfer channel communicating with the outside. The semiconductor process chamber also includes a switch structure. The wafer transfer channel is partially connected to the exhaust groove. The wafer transfer channel is used for wafer transfer, and the switch structure is used to open or close the wafer transfer channel.

[0032] Optionally, the switch structure includes a switch body and a driving component. The switch body is disposed outside the chamber body, and the driving component is connected to the switch body to drive the switch body to move and avoid or block the transfer channel.

[0033] Optionally, the switch body is provided with a purge air passage, which is connected to the plate transfer channel when the switch body blocks the plate transfer channel, and is used to deliver purge gas to the exhaust groove through the plate transfer channel.

[0034] The present invention has the following beneficial effects:

[0035] The semiconductor process chamber provided by this invention allows reactant gases to be delivered into the chamber body via a first inlet duct during semiconductor processing, thereby enabling semiconductor processing using the reactant gases. Furthermore, during semiconductor processing, a first protective gas can be delivered to a first protective gas duct via a second inlet duct, and then delivered into the chamber body via the first protective gas duct. By designing the first protective gas duct, the first protective gas delivered into the chamber body is distributed between the inner peripheral wall of the chamber body and the reactant gases within the chamber body. This first protective gas isolates the reactant gases within the chamber body from the inner peripheral wall, preventing them from contacting the inner peripheral wall. Thus, the first protective gas effectively protects the inner peripheral wall of the chamber body. This protection eliminates the need for protective components to protect the inner walls of the chamber itself. This reduces the number of protective components required for semiconductor process chamber maintenance. Furthermore, it prevents particle abnormalities caused by reactive gases depositing thin films on the surface of protective components during the thin film deposition stage of semiconductor processes. Additionally, it prevents particle abnormalities caused by arcing and discharge damage to protective components during the plasma processing stage of semiconductor processes. Consequently, it extends maintenance cycles, increases uptime, and reduces maintenance costs. It also reduces the likelihood of particle abnormalities, thereby lowering production costs and improving the stability and yield of semiconductor process results. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the structure of a semiconductor process chamber.

[0037] Figure 2This is a schematic diagram of the exhaust duct and air pump of a semiconductor process chamber.

[0038] Figure 3 This is a schematic diagram of the structure of a semiconductor process chamber provided in an embodiment of the present invention;

[0039] Figure 4 This is a schematic diagram of the airflow and charged particles at the exhaust port of a semiconductor process chamber provided in an embodiment of the present invention;

[0040] Figure 5 This is a schematic diagram of the structure of the air intake component provided in an embodiment of the present invention;

[0041] Figure 6 A schematic diagram of the structure of the first protective gas channel of the semiconductor process chamber provided in an embodiment of the present invention;

[0042] Figure 7 This is a schematic diagram of the structure of the filter element provided in an embodiment of the present invention;

[0043] Figure 8 This is a schematic diagram of the structure of the load-bearing component provided in an embodiment of the present invention;

[0044] Figure 9 This is a schematic diagram of the structure of the second protective airway provided in an embodiment of the present invention;

[0045] Figure 10 This is a schematic diagram of the structure of the exhaust groove and exhaust channel provided in an embodiment of the present invention;

[0046] Figure 11 This is a partial front view schematic diagram of a semiconductor process chamber provided in an embodiment of the present invention;

[0047] Figure 12 This is a partial top view of a semiconductor process chamber provided in an embodiment of the present invention;

[0048] Explanation of reference numerals in the attached figures:

[0049] 1-Cavity body; 11-First protective airway; 111-First annular airway; 112-First diversion airway; 113-Inlet channel; 12-First through hole; 13-Exhaust channel; 14-Exhaust groove; 15-Transfer plate channel; 2-Inlet component; 21-First intake channel; 22-Second intake channel; 23-First intake pipe; 24-Second intake pipe; 25-Ionization element; 26-Filter element; 27-Air source pipe; 28-Heating element; 3-Bearing component; 31-Second protective airway; 311-Main airway; 312-Second annular airway Air passage; 313-Second branch air passage; 314-Outlet air passage; 32-Support component; 33-Carrier component; 34-Heating structure; 4-Wafer; 5-RF source; 6-Evacuation component; 7-Flow equalization component; 8-Switch structure; 81-Switch body; 82-Drive component; 83-Purge air passage; 100-Cavity body; 101-Inlet air passage; 102-Exhaust air passage; 200-Base; 300-First protection component; 400-Second protection component; 500-Purge air pipe; 600-Third protection component; 700-Evacuation pump. Detailed Implementation

[0050] To enable those skilled in the art to better understand the technical solution of the present invention, a related semiconductor process chamber being researched by the inventors of the present invention will first be introduced.

[0051] like Figure 1 and Figure 2 As shown, the relevant semiconductor process chamber includes a chamber body 100 and a base 200. The chamber body 100 is provided with an air inlet 101 and an exhaust 102. The air inlet 101 is located on the top wall of the chamber body 100 and is used to deliver reaction gas into the chamber body 100. The exhaust 102 is semi-annular and is located in the circumferential wall of the chamber body 100. A vacuum pump 700 communicating with the exhaust 102 is provided on one side of the chamber body 100. The base 200 is located inside the chamber body 100 and is used to support the wafer 4. When performing MOCVD in the relevant semiconductor process chamber, the MOCVD process may include a thin film deposition stage and a plasma treatment stage. In the thin film deposition stage, the inlet duct 101 introduces reactive gas into the chamber body 100. The reactive gas can deposit a thin film on the upper surface of the wafer 4. In the plasma treatment stage, the inlet duct 101 introduces reactive gas into the chamber body 100. The reactive gas is ionized in the chamber body 100 to bombard the thin film deposited on the wafer 4 to improve the density of the film and reduce the resistivity of the film. In the thin film deposition stage and the plasma treatment stage, the vacuum pump 700 extracts the gas in the chamber body 100 through the exhaust duct 102.

[0052] like Figure 1As shown, the related semiconductor process chamber also includes a first protective component 300 and a second protective component 400. The first protective component 300 is annular and covers the edge and sidewalls of the base 200 along the circumference of the base 200 to prevent the deposition of a thin film on the lower surface of the wafer 4. The second protective component 400 is annular and is disposed along the circumference of the chamber body 100 and engages with the inner circumferential wall of the chamber body 100. The second protective component 400 is provided with an exhaust port communicating with the exhaust channel 102, and at least a portion of the second protective component 400 is disposed opposite to the first protective component 300. The second protective component 400 has a gap between itself and the first protective component 300, and the exhaust port is correspondingly arranged with the bottom of the base 200 to prevent the reactive gas from flowing to the bottom of the base 200 and causing damage to the part of the chamber body 100 and components below the base 200. The second protective component 400 is used to protect the inner peripheral wall of the chamber body 100 during the thin film deposition stage and the plasma processing stage, to prevent the reactive gas in the thin film deposition stage from depositing a thin film on the inner peripheral wall of the chamber body 100, and to prevent the reactive gas in the plasma processing stage from bombarding the inner peripheral wall of the chamber body 100.

[0053] However, the inventors of this invention have discovered that, on the one hand, in practical applications, during the thin film deposition stage, the reactive gas deposits a thin film on the surface of the first protective component 300. Furthermore, with the accumulation of process cycles and time, the adhesion of the deposited film on the surface of the first protective component 300 gradually decreases, and the deposited film may peel off in flakes, resulting in particle abnormalities. On the other hand, in practical applications, since the first protective component 300 is made of metal, and part of the second protective component 400 is also made of metal, and part of the second protective component 400 is positioned opposite to the first protective component 300, during the plasma treatment stage, when charged particles generated by the ionization of the reactive gas flow into the gap between the first protective component 300 and the second protective component 400, the first protective component 300 and the second protective component 400 will form a structure similar to a parallel-plate capacitor. This necessitates that the gap between the first protective component 300 and the second protective component 400 meet a preset assembly gap range to avoid sparking and discharge phenomena between the first protective component 300 and the second protective component 400 during the plasma treatment stage. Therefore, when the gap between the first protective component 300 and the second protective component 400 does not meet the preset assembly gap range, sparking and discharge are likely to occur between the first protective component 300 and the second protective component 400. When the gap between the first protective component 300 and the second protective component 400 meets the preset assembly gap range, the suction force on the side of the exhaust duct 102 connected to the suction pump 700 is relatively larger than the suction force at other locations. Therefore, more charged particles accumulate between the first protective component 300 and the second protective component 400 at the corresponding positions of the suction pump 700, which can easily form a conductive current and may still lead to sparking and discharge. As the number of sparking and discharge events increases, the surfaces of the first protective component 300 and the second protective component 400 will be damaged, leading to particle abnormalities.

[0054] Therefore, due to particle abnormalities caused by thin film deposition, the first protective component 300 requires regular maintenance, resulting in a short maintenance cycle, short uptime, and high maintenance costs for the semiconductor process chamber, which in turn leads to high production costs for the semiconductor process chamber. Furthermore, the particle abnormalities caused by thin film deposition in the first protective component 300, as well as by arcing discharge phenomena in the first and second protective components 300, increase the likelihood of particle abnormalities, leading to poor stability and low yield in the semiconductor process.

[0055] The semiconductor process chamber provided by the present invention will now be described in detail with reference to the accompanying drawings.

[0056] like Figure 3 , Figure 5 and Figure 6 As shown, this embodiment of the invention provides a semiconductor process chamber, including a chamber body 1 and an air inlet component 2. The chamber body 1 is provided with a first protective air channel 11, and the air inlet component 2 is provided with a first air inlet channel 21 and a second air inlet channel 22. The first air inlet channel 21 communicates with the interior of the chamber body 1 and is used to deliver a reaction gas into the chamber body 1. The second air inlet channel 22 communicates with the interior of the chamber body 1 through the first protective air channel 11 and is used to deliver a first protective gas into the chamber body 1 through the first protective air channel 11. The first protective air channel 11 is used to distribute the first protective gas delivered into the chamber body 1 between the inner peripheral wall of the chamber body 1 and the reaction gas in the chamber body 1.

[0057] The semiconductor process chamber provided by this invention allows reactant gas to be delivered into the chamber body 1 via a first air inlet 21 during semiconductor processing, thereby enabling semiconductor processing using the reactant gas. Furthermore, during semiconductor processing, a first protective gas can be delivered to a first protective gas channel 11 via a second air inlet 22, and then delivered into the chamber body 1 via the first protective gas channel 11. By designing the first protective gas channel 11, the first protective gas delivered into the chamber body 1 is distributed between the inner peripheral wall of the chamber body 1 and the reactant gas within the chamber body 1. This first protective gas effectively isolates the reactant gas within the chamber body 1 from the inner peripheral wall of the chamber body 1, preventing the reactant gas from contacting the inner peripheral wall of the chamber body 1. This allows the inner peripheral wall of the chamber body 1 to be protected by the first protective gas, eliminating the need for a separate protective component (e.g., the first protective component 300 in a semiconductor process chamber) to protect the inner peripheral wall of the chamber body 1. This reduces the number of protective components requiring maintenance in the semiconductor process chamber (e.g., eliminating the need for maintenance of the first protective component 300). Furthermore, it prevents particle abnormalities caused by the deposition of a thin film on the surface of the first protective component 300 due to reactive gas during the thin film deposition stage of the semiconductor process. Additionally, it prevents particle abnormalities caused by arcing discharge between the first protective component 300 and the second protective component 400 during the plasma processing stage of the semiconductor process. Figure 4 As shown, this illustrates the airflow and charged particle conditions between the second protective component 400 and the inner peripheral wall of the chamber body 1. This can, on the one hand, increase the maintenance cycle and uptime, and reduce maintenance costs, and on the other hand, reduce the possibility of particle abnormalities. Consequently, this can, on the one hand, reduce production costs, and on the other hand, improve the stability of semiconductor process results and improve process yield.

[0058] Optionally, the semiconductor process chamber provided in the embodiments of the present invention can be applied to, but is not limited to, MOCVD processes.

[0059] like Figure 3 and Figure 5 As shown, in one embodiment of the present invention, the air intake component 2 may include a first air intake pipe 23 and a second air intake pipe 24; the first air intake pipe 23 penetrates the top of the chamber body 1 and has a first air intake channel 21; the second air intake pipe 24 is sleeved outside the first air intake pipe 23, and the annular space between the second air intake pipe 24 and the first air intake pipe 23 serves as the second air intake channel 22.

[0060] In practical applications, the reaction gas can be transported into the chamber body 1 through the first inlet pipe 23, and the first protective gas can be transported into the first protective gas passage 11 through the annular space between the second inlet pipe 24 and the first inlet pipe 23.

[0061] like Figure 6 As shown, optionally, the top of the chamber body 1 may be provided with a first through hole 12 for the first air inlet pipe 23 to pass through, and a second through hole for the second air inlet pipe 24 to pass through. The first protective air passage 11 may be provided inside the top of the chamber body 1.

[0062] Optionally, the first air intake pipe 23 and the second air intake pipe 24 can be arranged coaxially.

[0063] Optionally, the first through hole 12 and the second through hole can be coaxially arranged.

[0064] In practical applications, the air intake component 2 can be set above the top of the chamber body 1. By passing the first air intake pipe 23 through the first through hole 12, the first air intake channel 21 can be connected to the inside of the chamber body 1. By passing the second air intake pipe 24 through the second through hole, the second air intake channel 22 can be connected to the second protective air channel 31.

[0065] Optionally, the first air inlet pipe 23 can be coaxially arranged with the chamber body 1.

[0066] This design allows the reactive gas to enter the chamber body 1 from the top center, thereby improving the uniformity of the reactive gas distribution within the chamber body 1 and consequently improving the uniformity of the semiconductor process results.

[0067] like Figure 3 and Figure 6As shown, in one embodiment of the present invention, the first protective airway 11 may include a first annular airway 111, a plurality of first diversion airways 112, and a plurality of air inlet channels 113. The first annular airway 111 is disposed circumferentially within the peripheral wall of the chamber body 100 and surrounds the connection between the first air inlet channel 21 and the chamber body 1. The plurality of first diversion airways 112 are spaced apart circumferentially along the first annular airway 111. The first annular airway 111 is connected to the second air inlet channel 22 through the plurality of first diversion airways 112. The plurality of air inlet channels 113 are spaced apart circumferentially along the first annular airway 111 and are higher than the support component for supporting the wafer inside the chamber body. The first annular airway 111 is connected to the inside of the chamber body 1 through the plurality of air inlet channels 113.

[0068] In practical applications, the first protective gas can be transported through the space between the second air inlet pipe 24 and the first air inlet pipe 23 to multiple first diversion air channels 112, and then transported through multiple first diversion air channels 112 to the first annular air channel 111. Since the multiple first diversion air channels 112 are arranged circumferentially along the first annular air channel 111, the first protective gas can enter the first annular air channel 111 from multiple positions spaced apart circumferentially along the first annular air channel 111 through the multiple first diversion air channels 112. After that, the first protective gas can be transported through the first annular air channel 111 to multiple air inlet channels 113, and then transported into the chamber body 1 through multiple air inlet channels 113. By providing a first annular air passage 111 along the circumference of the top of the chamber body 1 and providing multiple air inlet passages 113 at intervals along the circumference of the first annular air passage 111, the first protective gas transported into the chamber body 1 through the multiple air inlet passages 113 can form an annular airflow along the circumference of the chamber body 1 within the chamber body 1. Since the first annular air passage 111 surrounds the connection between the first air inlet passage 21 and the chamber body 1, the annular airflow formed by the first protective gas in the chamber body 1 can surround the reaction gas transported into the chamber body 1 through the first air inlet passage 21, isolating the reaction gas from the inner circumferential wall of the chamber body 1, preventing the reaction gas in the chamber body 1 from contacting the inner circumferential wall of the chamber body 1, thereby protecting the inner circumferential wall of the chamber body 1 by means of the annular airflow formed by the first protective gas in the chamber body 1.

[0069] like Figure 6 As shown, optionally, the first annular air passage 111 can surround the first through hole 12, and a plurality of first diversion air passages 112 can be disposed between the first through hole 12 and the first annular air passage 111.

[0070] In practical applications, the annular space between the second intake pipe 24 and the first intake pipe 23, which serves as the second intake channel 22, can communicate with at least the portions of the plurality of first diversion channels 112 near the first through holes 12. The first protective gas can enter the plurality of first diversion channels 112 from the portions of the plurality of first diversion channels 112 near the first through holes 12 through the second intake channel 22, and flow in the first diversion channels 112 along the extension direction of the first diversion channels 112 toward the direction of the first annular channel 111 (i.e., away from the first through holes 12), thereby entering the first annular channel 111 after flowing through the first diversion channels 112.

[0071] like Figure 3 and Figure 6 As shown, optionally, the first diversion airway 112 can be disposed in the top wall of the chamber body 1 and extend radially along the chamber body 1.

[0072] Optionally, multiple first diversion channels 112 can be evenly spaced along the circumference of the first annular channel 111.

[0073] This design allows the first protective gas, which passes through multiple first diversion channels 112, to enter the first annular channel 111 from multiple positions evenly spaced in the circumferential direction. This improves the uniformity of the distribution of the first protective gas in the first annular channel 111, thereby improving the uniformity of the circumferential distribution of the first protective gas entering the chamber body 1 and the uniformity of the protection of the inner circumferential wall of the chamber body 1 by the first protective gas.

[0074] like Figure 5 As shown, in one embodiment of the present invention, the air intake component 2 may further include an ionization element 25 and a filter element 26. The ionization element 25 is configured in conjunction with the second air intake duct 22 to ionize the first protective gas. The second air intake duct 22 is connected to the first protective gas duct 11 through the filter element 26. The filter element 26 is used to filter the charged particles generated by the ionization of the first protective gas.

[0075] This design is due to the fact that during the plasma processing stage of semiconductor manufacturing, radio frequency power is applied to the chamber body 1 to generate electric and magnetic fields. The reactive gas entering the chamber body 1 can be ionized under the action of the high-frequency magnetic field to generate plasma that bombards the thin film deposited on the wafer 4. In this process stage, if the first protective gas is directly transported to the first protective gas channel 11 through the second inlet 22, the first protective gas may also be ionized under the action of the high-frequency magnetic field after being transported into the chamber body 1 through the first protective gas channel 11, causing the protective gas to fail. Thus, on the one hand, the plasma generated by the first protective gas and the plasma generated by the reactive gas may bombard the inner peripheral wall of the chamber body 1 under the action of the electric field in the chamber body 1, causing damage to the inner peripheral wall of the chamber body 1 that requires maintenance and leading to particle abnormalities. On the other hand, the plasma generated by the ionization of the first protective gas may participate in the reaction during the plasma processing stage under the influence of the electric field in the chamber body 1, and together with the plasma generated by the reactive gas, bombard the thin film deposited on the wafer 4, resulting in poor stability of the conductor process and poor process yield.

[0076] The semiconductor process chamber provided in this embodiment of the invention includes an ionization element 25 that cooperates with a second air inlet 22. The second air inlet 22 is connected to a first protective gas duct 11 via a filter element 26. Since the filter element 26 can filter charged particles generated by the ionization of the first protective gas, the first protective gas passing through the second air inlet 22 can be ionized by the ionization element 25 during the plasma processing stage of the semiconductor process. The filter element 26 then filters the charged particles (e.g., gas ions, plasma, and electrons) generated by the ionization of the first protective gas, preventing these charged particles from entering the first protective gas duct 11 and thus preventing them from passing through the first protective gas duct 11. The gas duct 11 enters the chamber body 1. The first protective gas, after ionization, is not easily ionized by the high-frequency magnetic field inside the chamber body 1. This avoids problems caused by the ionization of the first protective gas inside the chamber body 1, allowing the first protective gas to stably protect the inner wall of the chamber body 1 during the plasma processing stage of the semiconductor process. This further extends the maintenance cycle, increases the uptime, and reduces maintenance costs. It also further reduces the possibility of particle abnormalities, thereby further reducing production costs and improving the stability of semiconductor process results and process yield.

[0077] like Figure 5As shown, in one embodiment of the present invention, the ionization element 25 may include a radio frequency coil, the first air intake pipe 23 is made of an insulating material, the second air intake pipe 24 is made of a conductive material, the radio frequency coil is wrapped around the second air intake pipe 24 and is used to electrically connect to the radio frequency source 5.

[0078] In practical applications, radio frequency power can be applied to the radio frequency coil through the radio frequency source 5. Since the first air intake pipe 23 is made of insulating material and the second air intake pipe 24 is made of conductive material, the second air intake duct 22 will generate an electric field and a magnetic field under the action of the radio frequency power applied by the radio frequency coil. The first protective gas passing through the second air intake duct 22 will be ionized by the high-frequency magnetic field. The first air intake duct 21 will not be affected by the radio frequency power applied by the radio frequency coil. The reaction gas passing through the first air intake duct 21 will not be ionized during the process of passing through the first air intake duct 21. Thus, the reaction gas will be ionized in the chamber body 1 after entering the chamber body 1.

[0079] Optionally, the first air intake pipe 23 can be made of ceramic.

[0080] like Figure 5 and Figure 7 As shown, in one embodiment of the present invention, the filter element 26 may include a conductive filter screen, which is arranged in a ring shape corresponding to the second air inlet 22 and grounded, and is located between the second air inlet 22 and the first protective air inlet 11.

[0081] In other words, the conductive filter is ring-shaped and can be correspondingly arranged in the annular space between the second air intake pipe 24 and the first air intake pipe 23, which forms the second air intake channel 22. In practical applications, the ionized first protective gas in the second air intake channel 22 needs to pass through the conductive filter to enter the first protective gas channel 11. Since the conductive filter is grounded, when the ionized first protective gas passes through the conductive filter, the charged particles generated by the ionization of the first protective gas can be guided away by the conductive filter, thereby preventing the charged particles generated by the ionization of the first protective gas from entering the first protective gas channel 11.

[0082] Optionally, the conductive filter can be made of copper.

[0083] like Figure 5 As shown, optionally, a conductive filter can be installed at the bottom end of the second air intake pipe 24.

[0084] like Figure 3 and Figure 5 As shown, in one embodiment of the present invention, the air intake component 2 may further include an air source pipe 27, and the second air intake channel 22 is connected to the first protective air source through the air source pipe 27.

[0085] In practical applications, the first protective gas source is used to provide the first protective gas. The first protective gas can be first delivered to the gas source pipe 27, and then delivered to the second air intake duct 22 through the gas source pipe 27.

[0086] like Figure 5 As shown, in one embodiment of the present invention, the air intake component 2 may further include a heating element 28, which is configured in conjunction with the air source pipe 27 to heat the first protective gas flowing through the air source pipe 27.

[0087] This design is because during the thin film deposition stage of semiconductor technology, the reaction gas needs to enter the chamber body 1 in the form of vaporization. Therefore, the reaction gas needs to have a certain temperature. In order to avoid the first protective gas entering the chamber body 1 from affecting the temperature of the reaction gas, a heating element 28 is provided in conjunction with the gas source pipe 27. The heating element can heat the first protective gas flowing through the gas source pipe 27, so that the first protective gas entering the chamber body 1 can have a certain temperature.

[0088] like Figure 5 As shown, optionally, the heating element 28 may include a heating belt, which may be wrapped around the gas source pipe 27.

[0089] like Figure 3 and Figure 5 As shown, in one embodiment of the present invention, the number of gas source pipes 27 can be multiple, and the second air inlet 22 is connected to a first protective gas source that provides different types of first protective gas through different gas source pipes 27.

[0090] This design is because, in practical applications, different semiconductor processes and different stages of those processes may require different types of first protective gases. Therefore, by delivering different types of first protective gases to the second inlet duct 22 through different gas supply pipes 27, it can be adapted to different semiconductor processes and different stages of those processes. For example, ... Figure 3 and Figure 5 As shown, there are two gas supply pipes 27. Each of the two gas supply pipes 27 is connected to the second air inlet 22 and is connected to a first protective gas source for each of the two first protective gases. That is, one of the two gas supply pipes 27 can deliver one type of first protective gas from one first protective gas source to the second air inlet 22, and the other gas supply pipe 27 can deliver another type of first protective gas from another first protective gas source to the second air inlet 22. However, the number of gas supply pipes 27 is not limited to two; for example, there can be three, four, or more gas supply pipes 27.

[0091] In one embodiment of the present invention, the first protective gas may include nitrogen or an inert gas.

[0092] In practical applications, taking an MOCVD process (such as the MOTiN process) as an example, in the thin film deposition stage, the reactant gas can be tetrakis(dimethylamino)titanium (TDMAT), and helium (He) can be used as the carrier gas and nitrogen (N2) as the dilution gas. In this case, the first protective gas can be nitrogen to avoid interference with the thin film deposition. In the plasma processing stage, the reactant gas can include hydrogen (H2) and nitrogen. In this case, the first protective gas can be an inert gas to avoid interference with the plasma processing.

[0093] Optionally, the inert gas can be argon (Ar).

[0094] In one embodiment of the present invention, the ionization energy of the first protective gas can be higher than that of the reactant gas.

[0095] In other words, the first protective gas is less likely to be ionized than the reactant gas. This design is because during the plasma processing stage, when the first protective gas passes through the second inlet 22, some of it may not be ionized by the ionization element 25. Since the ionization energy of the first protective gas is higher than that of the reactant gas, this unionized portion of the first protective gas is less likely to be ionized under the influence of the high-frequency magnetic field within the chamber body 1 after entering the chamber body 1. This further avoids problems caused by the ionization of the first protective gas within the chamber body 1, enabling the first protective gas to stably protect the inner peripheral wall of the chamber body 1 during the plasma processing stage of the semiconductor process. Consequently, on the one hand, it can further extend the maintenance cycle and uptime, reducing maintenance costs; on the other hand, it can further reduce the possibility of particle abnormalities, thereby further reducing production costs and improving the stability of semiconductor process results and improving process yield.

[0096] Optionally, during the plasma treatment stage, the first protective gas can be argon (Ar). The ionization energy of argon is higher than that of the reaction gases, including hydrogen and nitrogen, used in the plasma treatment stage of the MOCVD process.

[0097] like Figure 3 , Figure 8 and Figure 11 As shown, in one embodiment of the present invention, the semiconductor process chamber may further include a support member 3. The support member 3 is disposed in the chamber body 1. The support member 3 has a support surface for supporting the wafer 4 and a back surface away from the support surface. A second protective gas channel 31 is disposed in the support member 3. The second protective gas channel 31 is used to deliver a second protective gas from the back surface of the support member 3 to the back surface of the support member 3.

[0098] like Figure 1 As shown, in a related semiconductor process chamber being studied by the inventors of this invention, a purge gas pipe 500 is provided at the bottom of the chamber body 100. The purge gas pipe 500 delivers purge gas upward from the bottom of the chamber body 100 toward the lower surface of the base 200. The purge gas is used to block the reaction gases and byproducts of the thin film deposition stage from the top of the base 200 through the gap between the base 200 and the inner peripheral wall of the chamber body 100 to the bottom of the base 200. A thin film is deposited on the lower surface of the base 200 and the inner wall of the chamber body 100 below the base 200. Furthermore, the related semiconductor process chamber also includes a third protective component 600, which is disposed inside the chamber body 100 and covers the bottom wall of the chamber body 100 to prevent the reaction gases and byproducts from diffusing to the bottom of the base 200 and depositing a thin film on the bottom wall of the chamber body 100. However, the inventors of this invention have discovered that because the purge gas is delivered upwards from the bottom of the chamber body 100, the purge gas cannot completely cover the lower surface of the base 200. Furthermore, the purge gas is less effective at preventing the diffusion of reactant gases and byproducts below the base 200. As a result, during long-term use, thin films may still be deposited on the lower surface of the base 200, the inner wall of the chamber body 100 below the base 200, and the third protective component 600. This necessitates maintenance of the base 200 and the chamber body 100, leading to shorter maintenance cycles, shorter uptime, and higher maintenance costs for the semiconductor process chamber. Consequently, production costs are higher, and particle abnormalities are more likely to occur, resulting in poor stability and low yield of the conductor process.

[0099] like Figure 1As shown, in practical applications, the peripheral wall of the chamber body 1 may also be provided with an exhaust duct 13 for gas discharge, and the exhaust duct 102 may be located above the back of the supporting member 3. The exhaust duct 13 is connected to the suction member 6, and the suction member 6 can extract the gas in the chamber body 1 through the exhaust duct 13. The semiconductor process chamber provided in this embodiment of the invention provides a second protective gas duct 31 in the supporting member 3, and the second protective gas duct 31 is designed to deliver the second protective gas to the back of the supporting member 3. When the second protective gas is delivered to the back of the supporting member 3, it will be subjected to the suction force of the suction member 6 upward and towards the inner peripheral wall of the chamber body 1, so that the second protective gas can flow closely to the back of the supporting member 3 towards the inner peripheral wall of the chamber body 1, thereby increasing the area of ​​the second protective gas covering the back of the supporting member 3, and enabling the second protective gas to block the reaction gas and by-products that diffuse downward through the gap between the supporting member 3 and the inner peripheral wall of the chamber body 1 during the process of being sucked from the back of the supporting member 3 to the inner peripheral wall of the chamber body 1. The effect is improved, reducing the amount of reactant gas and byproducts that diffuse downwards to the underside of the support component 3 through the gap between the support component 3 and the inner peripheral wall of the chamber body 1. This reduces the occurrence of thin film deposition on the back side of the support component 3, the inner wall of the chamber body 1 below the support component 3, and eliminates the need for protective components (e.g., a third protective component 600 in a related semiconductor process chamber) on the bottom wall of the chamber body 1. This further extends the maintenance cycle, increases uptime, and reduces maintenance costs. It also further reduces the possibility of particle abnormalities, thereby further reducing production costs and improving the stability of semiconductor process results and process yield.

[0100] Optionally, the second protective gas may include nitrogen or an inert gas.

[0101] In practical applications, taking the MOCVD process as an example, during the thin film deposition stage, the reaction gas can be tetrakis(dimethylamino)titanium (TDMAT). Furthermore, during the thin film deposition stage, helium can be used as the carrier gas and nitrogen as the dilution gas. In this case, the second protective gas can be nitrogen to avoid interference with the thin film deposition.

[0102] like Figure 3 , Figure 8 and Figure 9As shown, in one embodiment of the present invention, the supporting component 3 may include a support member 32 and a supporting member 33. The support member 32 is connected to the bottom of the chamber body 1, and the supporting member 33 is disposed on the support member 32. The supporting member 33 has a supporting surface and a back surface of the supporting component 3. The second protective airway 31 includes a main airway 311, a second annular airway 312, a plurality of second branch airways 313 and a plurality of air outlets 314. The main airway 311 is disposed in the support member 32 and is used to communicate with the second protective air source. The second annular airway 312 is arranged circumferentially along the supporting member 33 and surrounds the main airway 311. The plurality of second branch airways 313 are arranged at intervals circumferentially along the second annular airway 312. The second annular airway 312 is connected to the main airway 311 through the plurality of second branch airways 313. The plurality of air outlets 314 are arranged at intervals circumferentially along the second annular airway 312, and the air outlet end of the air outlet 314 is located on the back surface of the supporting member 33.

[0103] In practical applications, the support member 32 is used to support the carrier member 33, and the carrier member 33 is used to support the wafer 4. The carrier member 33 has a bearing surface for supporting the wafer 4 and a back surface away from the bearing surface. The second protective gas source is used to provide the second protective gas. The second protective gas can first be transported to the main gas channel 311, then transported through the main gas channel 311 to multiple second branch gas channels 313, and then transported through the multiple second branch gas channels 313 to the second annular gas channel 312. Since the multiple second branch gas channels 313 are arranged circumferentially around the second annular gas channel 312, the second protective gas through the multiple second branch gas channels 313 can enter the second annular gas channel 312 from multiple positions spaced circumferentially around the second annular gas channel 312. After that, the second protective gas can be transported through the second annular gas channel 312 to multiple outlet channels 314. Since the outlet end of the outlet channel 314 is located on the back of the support member 33, the second protective gas through the multiple outlet channels 314 can flow out from the back of the support member 3 and flow to the back of the support member 3 under the action of the suction of the suction member 6.

[0104] like Figure 3 and Figure 8 As shown, optionally, the main air passage 311 can extend along the axial direction of the support member 32.

[0105] Optionally, the main air passage 311 and the carrier 33 can be arranged coaxially.

[0106] Optionally, the second protective air source can be located outside the bottom of the chamber body 1, and the bottom end of the main air channel 311 can be connected to the second protective air source.

[0107] like Figure 8 and Figure 9 As shown, optionally, multiple second diversion airways 313 can be arranged between the main airway 311 and the second annular airway 312.

[0108] In practical applications, the main air passage 311 can be connected to at least the portions of the multiple second branch air passages 313 near the center of the support member 33. The second protective gas can enter the multiple second branch air passages 313 from the portions of the multiple second branch air passages 313 near the center of the support member 33 through the main air passage 311, and flow in the second branch air passages 313 along the extension direction of the second branch air passages 313 toward the direction of the second annular air passage 312 (i.e., away from the center of the support member 33), so that after flowing through the second branch air passages 313, it enters the second annular air passage 312.

[0109] like Figure 8 and Figure 9 As shown, optionally, the second diversion airway 313 may extend radially along the carrier 33.

[0110] Optionally, multiple second diversion channels 313 can be evenly spaced along the circumference of the second annular channel 312.

[0111] This design allows the second protective gas, which passes through multiple second diversion channels 313, to enter the second annular channel 312 from multiple positions evenly spaced in the circumferential direction. This improves the uniformity of the distribution of the second protective gas in the second annular channel 312, and further improves the uniformity of the distribution of the second protective gas flowing out from the back of the support member 33 in the circumferential direction on the back of the support member 33, thereby improving the uniformity of the protection of the back of the support member 33 by the second protective gas.

[0112] like Figure 8 As shown, in one embodiment of the present invention, the air outlet 314 can be inclined, and the air outlet end of the air outlet 314 is closer to the edge of the carrier 33 than the air inlet end of the air outlet 314.

[0113] This design reduces the downward flow of the second protective gas flowing out from the back of the support member 33 through the vent 314, thereby allowing the second protective gas flowing out from the back of the support member 33 through the vent 314 to adhere more closely to the back of the support member 33, thus improving the ability of the second protective gas to protect the back of the support member 33.

[0114] like Figure 8 and Figure 9 As shown, in one embodiment of the present invention, the carrier 33 may be provided with a plurality of channel groups, each channel group including a plurality of air outlet channels 314, and the plurality of air outlet channels 314 of one channel group surround the plurality of air outlet channels 314 of another channel group.

[0115] This design allows multiple air outlet channels 314 to be spaced apart along a radius of the support member 33. With the help of the multiple air outlet channels 314 spaced apart along a radius of the support member 33, the second protective gas can be delivered from multiple positions spaced apart along a radius of the back of the support member 33 to the back of the support member 33. This can increase the area and stability of the second protective gas covering the back of the support member 33, thereby improving the ability of the second protective gas to protect the back of the support member 33.

[0116] For example, such as Figure 8 and Figure 9 As shown, the carrier 33 can be provided with two sets of channels, each set including multiple air outlet channels 314. The multiple air outlet channels 314 of one set surround the multiple air outlet channels 314 of the other set, so that two air outlet channels 314 are spaced apart on one radius of the carrier 33. With the help of the two air outlet channels 314 spaced apart on one radius of the carrier 33, the second protective gas can be delivered from two positions spaced apart on one radius of the back of the carrier 33 to the back of the carrier 33. However, the number of sets of channels provided in the carrier 33 is not limited to this. For example, the number of sets of channels provided in the carrier 33 can also be three, four or more.

[0117] like Figure 9 As shown, in one embodiment of the present invention, the number of air outlet channels 314 included in the channel group near the center of the support member 33 in the plurality of channel groups can be greater than the number of air outlet channels 314 included in the channel group near the edge of the support member 33.

[0118] In other words, the more air outlet channels 314 are included in the channel group closer to the center of the support member 33, the greater the density of air outlet channels 314 in the channel group closer to the center of the support member 33, the fewer air outlet channels 314 are included in the channel group closer to the edge of the support member 33, and the smaller the density of air outlet channels 314 in the channel group closer to the edge of the support member 33. This design is because the second protective gas delivered by the vent 314 closer to the center of the support member 33 is farther from the exhaust duct 13, and the suction force of the suction component 6 is smaller, resulting in a greater degree of flow downwards towards the support member 33. Conversely, the second protective gas delivered by the vent 314 closer to the edge of the support member 33 is closer to the exhaust duct 13, and the suction force of the suction component 6 is greater, resulting in a smaller degree of flow downwards towards the support member 33. Therefore, when the number of vent 314s in the vent group near the center of the support member 33 is equal to the number of vent 314s in the vent group near the edge of the support member 33, the protection capability of the second protective gas delivered by the vent group near the center of the support member 33 for the back of the support member 33 will be weaker than that of the second protective gas delivered by the vent group near the edge of the support member 33 for the back of the support member 33. The semiconductor process chamber provided in this embodiment of the invention can improve the protection capability of the second protective gas delivered by the channel group near the center of the carrier 33 for the back side of the carrier 33 by making the number of gas outlet channels 314 in the channel group near the center of the carrier 33 greater than the number of gas outlet channels 314 in the channel group near the edge of the carrier 33.

[0119] like Figure 3 , Figures 10-12 As shown, in one embodiment of the present invention, the chamber body 1 may also be provided with a plurality of exhaust channels 13 communicating with the interior of the chamber body 1. The semiconductor process chamber may also include an air extraction component 6. The plurality of exhaust channels 13 are evenly spaced along the circumference of the chamber body 1 within the peripheral wall of the chamber body 1 and are respectively connected to the air extraction component 6. The air extraction component 6 is used to extract the gas in the chamber body 1 through the plurality of exhaust channels 13.

[0120] This design is due to the discovery by the inventors of this invention that in a related semiconductor process chamber they are studying, the chamber body 100 has a vacuum pump 700 connected to the exhaust duct 102 on only one side, which causes a lateral airflow problem in the chamber body 100. This results in the thin film on the wafer 4 near the vacuum pump 700 being thinner than the thin film at other locations on the wafer 4, and the resistance value of the part of the wafer 4 near the vacuum pump 700 being larger than the resistance value at other locations on the wafer 4, thus causing a poor process yield. The semiconductor process chamber provided in this embodiment of the invention, by uniformly arranging multiple exhaust channels 13 along the circumferential direction of the chamber body 1 within the peripheral wall of the chamber body 1, and by connecting the multiple exhaust channels 13 to the suction component 6, allows the suction component 6 to extract the gas inside the chamber body 1 from multiple positions uniformly spaced circumferentially to the outside of the chamber body 1. Furthermore, since the multiple exhaust channels 13 are connected to the suction component 6, the multiple positions uniformly spaced circumferentially to the chamber body 1 can be uniformly subjected to the suction force of the suction component 6. Compared with the suction pump 700 connected to the exhaust channel 102 on one side of the chamber body 100, this can improve the uniformity of airflow inside the chamber body 1, avoid lateral airflow problems in the chamber body 1, thereby improving the uniformity of thin film thickness on the wafer 4, improving the uniformity of resistance value on the wafer 4, and ultimately improving the process yield.

[0121] like Figure 3 As shown, optionally, multiple exhaust ducts 13 can be connected to the same extraction component 6 respectively.

[0122] like Figure 3 As shown, optionally, the air extraction component 6 can be located outside the bottom of the chamber body 1.

[0123] like Figure 10 and Figure 12 As shown, optionally, the cross-section of the exhaust duct 13 can be arc-shaped.

[0124] like Figure 12 As shown, optionally, the number of exhaust ducts 13 can be four. However, the number of exhaust ducts 13 is not limited to this; for example, the number of exhaust ducts 13 can also be two, three, five, or more.

[0125] like Figure 3 and Figure 11 As shown, in one embodiment of the present invention, the air inlet end face of the exhaust duct 13 may be lower than or flush with the bottom surface of the support component 3 used to support the wafer 4, and the air outlet end face of the exhaust duct 13 may be located on the bottom surface of the chamber body 1.

[0126] In practical applications, during semiconductor processing, the bottom surface of the support component 3 can be higher than or flush with the air inlet end face of the exhaust channel 13. By positioning the air outlet end face of the exhaust channel 13 at the bottom surface of the chamber body 1, the gas inside the chamber body 1 can flow towards the bottom of the chamber body 1 after entering the exhaust channel 13 and be discharged from the bottom surface of the chamber body 1.

[0127] like Figure 3 , Figure 10 and Figure 11 As shown, in one embodiment of the present invention, the chamber body 1 may also be provided with an exhaust groove 14. The exhaust groove 14 is annular and is disposed along the circumference of the chamber body 1 on the circumferential wall of the chamber body 1. The groove opening of the exhaust groove 14 faces the inside of the chamber body 1. Multiple exhaust channels 13 are respectively connected to the inside of the chamber body 1 through the exhaust groove 14.

[0128] In practical applications, during the process of the gas in the chamber body 1 being extracted to the outside of the chamber body 1, the gas in the chamber body 1 can first enter the exhaust groove 14 through the slot of the exhaust groove 14. After entering the exhaust groove 14, the gas can flow along the circumference of the chamber body 1 in the exhaust groove 14, thereby entering multiple exhaust channels 13 and being discharged to the outside of the chamber body 1 through multiple exhaust channels 13.

[0129] like Figure 3 and Figure 10 As shown, in one embodiment of the present invention, the periphery of the chamber body 1 may also be provided with a wafer transfer channel 15 communicating with the outside. The semiconductor process chamber may also include a switch structure 8. The wafer transfer channel 15 is partially connected to the exhaust groove 14. The wafer transfer channel 15 is used for the transfer of the wafer 4, and the switch structure 8 is used to open or close the wafer transfer channel 15.

[0130] In practical applications, when it is necessary to transfer wafer 4 from outside the chamber body 1 to inside the chamber body 1, or from inside the chamber body 1 to outside the chamber body 1, the switching structure 8 opens the wafer transfer channel 15, allowing wafer 4 to be transferred from outside the chamber body 1 to inside the chamber body 1, or from inside the chamber body 1 to outside the chamber body 1, through the wafer transfer channel 15 and the portion of the exhaust groove 14 that corresponds to the wafer transfer channel 15. When semiconductor processing is required, the switching structure 8 closes the wafer transfer channel 15, separating the wafer transfer channel 15 from outside the chamber body 1, thereby sealing the chamber body 1.

[0131] like Figure 10 As shown, in one embodiment of the present invention, the switch structure 8 may include a switch body 81 and a drive component 82. The switch body 81 is disposed outside the chamber body 1, and the drive component 82 is connected to the switch body 81 and is used to drive the switch body 81 to move to avoid or block the plate transmission channel 15.

[0132] In practical applications, the drive component 82 can open the film transfer channel 15 by moving the drive switch body 81 to avoid it, and the drive component 82 can close the film transfer channel 15 by moving the drive switch body 81 to block it.

[0133] Optionally, the switch body 81 can be an isolation valve.

[0134] Optionally, the drive component 82 can be a lifting drive component 82.

[0135] In practical applications, the lifting drive component 82 drives the switch body 81 to descend, so that the switch body 81 avoids the plate transfer channel 15. The lifting drive component 82 drives the switch body 81 to rise, so that the switch body 81 blocks the plate transfer channel 15.

[0136] like Figure 3 and Figure 10 As shown, in one embodiment of the present invention, the switch body 81 may be provided with a purge air passage 83. The purge air passage 83 is connected to the plate transfer channel 15 when the switch body 81 blocks the plate transfer channel 15, and is used to deliver purge gas to the exhaust groove 14 through the plate transfer channel 15.

[0137] In practical applications, semiconductor processes can proceed when the switch body 81 blocks the wafer transfer channel 15, that is, when the switch body 81 closes the wafer transfer channel 15. During semiconductor processing, purge gas can be supplied to the wafer transfer channel 15 via the purge gas channel 83. The purge gas can flow through the wafer transfer channel 15 toward the portion of the exhaust groove 14 that is connected to the wafer transfer channel 15. It flows radially opposite to the gas discharged from the chamber body 1 to the exhaust groove 14, blocking the gas discharged from the chamber body 1 to the wafer transfer channel 15 from flowing toward the wafer transfer channel 15. This allows the gas discharged from the chamber body 1 to the exhaust groove 14 to be discharged to the outside of the chamber body 1 via the exhaust channel 13. Furthermore, both the purge gas and the gas discharged from the chamber body 1 to the exhaust groove 14 can be discharged to the outside of the chamber body 1 via the exhaust channel 13. This avoids lateral problems in the airflow within the chamber body 1 due to the presence of the wafer transfer channel 15 on the side of the chamber body 1 corresponding to the wafer transfer channel 15. This improves the uniformity of the airflow within the chamber body 1, thereby improving the uniformity of the thin film thickness on the wafer 4, improving the uniformity of the resistance value of the wafer 4, and ultimately improving the process yield.

[0138] Optionally, the purging gas may include nitrogen or an inert gas.

[0139] like Figure 12 As shown, optionally, a heating structure 34 may be provided inside the carrier 33, which is used to heat the wafer 4 on the carrier 33.

[0140] This design is because, in processes such as MOCVD, before the thin film deposition stage, the wafer 4 on the carrier 33 can be heated by the heating structure 34 to heat the carrier 33, which is beneficial for the subsequent deposition of thin films on the wafer 4.

[0141] like Figure 3 As shown, optionally, the semiconductor process chamber may also include a flow equalization component 7. The flow equalization component 7 is disposed in the chamber body 1 and located below the first air inlet 21 and inside the circumference of the plurality of air inlet channels 113. The flow equalization component 7 is used to equalize the flow of the reaction gas delivered to the chamber body 1 through the first air inlet 21, so that the reaction gas is evenly distributed in the chamber body 1.

[0142] In practical implementation, the outlet ends of the multiple air inlets 113 can be horizontal with or slightly lower than the outlet end of the flow equalization component 7. The outlet direction of the multiple air inlets 113 is vertically downward, which can prevent the first protective gas flowing out of the air inlets 113 from affecting the airflow of the reaction gas.

[0143] In summary, the semiconductor process chamber provided by the embodiments of the present invention can, on the one hand, increase maintenance cycle and uptime, and reduce maintenance costs, and on the other hand, reduce the possibility of particle abnormalities. Thus, it can reduce production costs and improve the stability of semiconductor process results and improve process yield.

[0144] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process chamber, characterized in that, Includes the chamber body and the air intake components; The chamber body is provided with a first protective air passage, and the air intake component is provided with a first air intake passage and a second air intake passage; The first air inlet is connected to the chamber body and is used to deliver the reaction gas into the chamber body; The second air inlet is connected to the chamber body through the first protective air inlet, and is used to deliver the first protective gas into the chamber body through the first protective air inlet; The first protective gas channel is used to distribute the first protective gas delivered to the chamber body between the inner peripheral wall of the chamber body and the reaction gas in the chamber body.

2. The semiconductor process chamber according to claim 1, characterized in that, The air intake component includes a first air intake pipe and a second air intake pipe; The first air intake pipe penetrates the top of the chamber body and has the first air intake passage; The second air intake pipe is sleeved outside the first air intake pipe, and the annular space between the second air intake pipe and the first air intake pipe serves as the second air intake passage.

3. The semiconductor process chamber according to claim 1, characterized in that, The first protective airway includes a first annular airway, multiple first diversion airways, and multiple air inlet channels; The first annular air passage is disposed circumferentially within the peripheral wall of the chamber body and surrounds the connection between the first air inlet and the chamber body. Multiple first diversion channels are arranged at circumferential intervals along the first annular channel, and the first annular channel is connected to the second intake channel through the multiple first diversion channels; The plurality of air inlet channels are arranged circumferentially along the first annular air channel and are higher than the support component for supporting the wafer in the chamber body. The first annular air channel is connected to the chamber body through the plurality of air inlet channels.

4. The semiconductor process chamber according to claim 2, characterized in that, The air intake component also includes an ionization element and a filter element; The ionization element is configured in conjunction with the second air inlet to ionize the first protective gas; The second air intake is connected to the first protective air intake through the filter element, which is used to filter the charged particles generated by the ionization of the first protective gas.

5. The semiconductor process chamber according to claim 4, characterized in that, The ionization device includes a radio frequency coil. The first air intake pipe is made of an insulating material, and the second air intake pipe is made of a conductive material. The radio frequency coil is wrapped around the second air intake pipe and is used to electrically connect to a radio frequency source.

6. The semiconductor process chamber according to claim 4, characterized in that, The filter element includes a conductive filter screen, which is arranged in a ring shape corresponding to the second air intake and grounded, and is located between the second air intake and the first protective air intake.

7. The semiconductor process chamber according to claim 1, characterized in that, The air intake component also includes an air source pipe, and the second air intake passage is connected to the first protective air source through the air source pipe.

8. The semiconductor process chamber according to claim 7, characterized in that, The air intake component also includes a heating element, which is configured in conjunction with the air source pipe to heat the first protective gas flowing through the air source pipe.

9. The semiconductor process chamber according to claim 1, characterized in that, The ionization energy of the first protective gas is higher than that of the reactant gas.

10. The semiconductor process chamber according to claim 1, characterized in that, The semiconductor process chamber further includes a support component disposed within the chamber body. The support component has a support surface for supporting a wafer and a back surface opposite to the support surface. A second protective gas channel is disposed within the support component, which is used to deliver a second protective gas from the back surface of the support component to the back surface of the support component.

11. The semiconductor process chamber according to claim 10, characterized in that, The supporting component includes a support member and a bearing member. The support member is connected to the bottom of the chamber body, and the bearing member is disposed on the support member. The bearing member has the bearing surface and the back surface of the bearing component. The second protective airway includes a main airway, a second annular airway, a plurality of second branch airways, and a plurality of outlet channels. The main airway is disposed within the support member and is used to communicate with the second protective air source. The second annular airway is arranged circumferentially along the bearing member and surrounds the main airway. The plurality of second branch airways are spaced apart circumferentially along the second annular airway. The second annular airway communicates with the main airway through the plurality of second branch airways. The plurality of outlet channels are spaced apart circumferentially along the second annular airway, and the outlet end of the outlet channel is located on the back surface of the bearing member.

12. The semiconductor process chamber according to claim 11, characterized in that, The air outlet is inclined, and the air outlet end of the air outlet is closer to the edge of the support member than the air inlet end of the air outlet.

13. The semiconductor process chamber according to claim 1, characterized in that, The chamber body is also provided with a plurality of exhaust channels communicating with the chamber body. The semiconductor process chamber also includes an air extraction component. The plurality of exhaust channels are evenly spaced along the circumference of the chamber body within the peripheral wall of the chamber body and are respectively connected to the air extraction component. The air extraction component is used to extract the gas in the chamber body through the plurality of exhaust channels.

14. The semiconductor process chamber according to claim 13, characterized in that, The air inlet end face of the exhaust duct is lower than or flush with the bottom surface of the support component used to support the wafer, and the air outlet end face of the exhaust duct is located on the bottom surface of the chamber body.

15. The semiconductor process chamber according to claim 13, characterized in that, The chamber body is also provided with an exhaust groove, which is annular and arranged along the circumference of the chamber body on the peripheral wall of the chamber body. The opening of the exhaust groove faces into the chamber body, and multiple exhaust channels are respectively connected to the chamber body through the exhaust groove.

16. The semiconductor process chamber according to claim 15, characterized in that, The periphery of the chamber body is also provided with a wafer transfer channel communicating with the outside. The semiconductor process chamber also includes a switch structure. The wafer transfer channel is partially connected to the exhaust groove. The wafer transfer channel is used for wafer transfer. The switch structure is used to open or close the wafer transfer channel.

17. The semiconductor process chamber according to claim 16, characterized in that, The switch structure includes a switch body and a driving component. The switch body is disposed outside the chamber body, and the driving component is connected to the switch body to drive the switch body to move and avoid or block the transfer channel.

18. The semiconductor process chamber according to claim 17, characterized in that, The switch body is provided with a purge air passage, which is connected to the plate transfer channel when the switch body blocks the plate transfer channel, and is used to deliver purge gas to the exhaust groove through the plate transfer channel.

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