Multi-angle adjustment ion beam impurity sputtering experiment device and method based on magnetic driving

By using a magnetically driven multi-angle isocentric adjustment mechanism and a multi-layer magnetic shielding structure, the problems of vacuum seal leakage and sputtering point drift in ion beam sputtering experimental devices have been solved, realizing a multi-angle impurity sputtering experiment with high stability and high repeatability, which is suitable for the research of materials for fusion reactor PFC components.

CN121601540APending Publication Date: 2026-03-03HEFEI INSTITUTE OF PHYSICAL SCIENCE CHINESE ACADEMY OF SCIENCES
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Patent Information

Application Number
CN202511733898.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-11-24
Publication Date
2026-03-03

AI Technical Summary

Technical Problem

Existing ion beam sputtering experimental setups suffer from issues such as wear and leakage of the vacuum sealing structure, magnetic field interference, and sputtering point drift when adjusting multiple angles, affecting the repeatability and accuracy of the experiments.

Method used

A magnetically driven multi-angle isocentric adjustment mechanism is adopted. Through the magnetic drive device and multi-layer magnetic shielding structure, the sample stage can be continuously and controllably adjusted from 0° to 90°, keeping the ion beam incident point fixed, avoiding vacuum leakage and magnetic field interference, and ensuring high stability and repeatability of the experiment.

Benefits of technology

It achieves high-precision, stable, and repeatable multi-angle adjustment of the sample stage in a vacuum environment, solves the problems of vacuum seal leakage and sputtering point drift in traditional devices, and provides a highly stable and repeatable impurity sputtering experimental platform.

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Abstract

The invention discloses a multi-angle adjustment ion beam impurity sputtering experiment device and method based on magnetic driving. The multi-angle adjustment ion beam impurity sputtering experiment device comprises a vacuum cavity, a sample table assembly, a magnetic control angle isocentric adjustment mechanism and a multi-layer magnetic shielding mechanism. By adjusting the magnetic field direction and strength of an electromagnet in the magnetic driving angle isocentric adjusting mechanism, 0-90-degree non-contact angle adjustment of a sample in a vacuum environment is realized, and the vacuum sealing problem caused by a traditional shaft penetrating type transmission structure is avoided. The multilayer magnetic shielding mechanism can effectively inhibit interference of magnetic field leakage to ion beam transmission and sputtering processes. Due to the isocentric adjustment design, the sputtering point position of the sample is kept fixed in the rotating process, and the problems of ion flux deviation and sputtering point drift caused by incident angle change are solved. The device is compact in structure, reliable in sealing, small in magnetic interference and suitable for multi-angle impurity sputtering, incident angle dependence research and surface deposition experiments.
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