Image sensor

Abstract

An image sensor includes: a sensor substrate including a plurality of first pixels configured to sense light of a first wavelength and a plurality of second pixels configured to sense light of a second wavelength different from the first wavelength; a first color filter and a second color filter disposed over the sensor substrate and corresponding to the plurality of first pixels and the plurality of second pixels, respectively; a transparent spacer on both the first color filter and the second color filter; at least one ultramicro lens array over the transparent spacer; and a plurality of upper anti-reflection layers on a light incident surface of the at least one ultramicro lens array, the plurality of upper anti-reflection layers being stacked to overlap each other in a vertical direction, the vertical direction being perpendicular to an upper surface of the sensor substrate, the refractive index of the plurality of upper anti-reflection layers increases toward the at least one ultramicro lens array in the vertical direction.

Description

Technical Field

[0001] The inventive concept relates to image sensors, and more particularly to image sensor technology that utilizes a meta-micro-lens. Background Technology

[0002] Generally, an image sensor may include components for focusing incident light. As an example of a focusing device, a microlens array can be used, and light reflection that occurs at the light incident surface of the microlens array ultimately reduces the efficiency of the sensing element. Summary of the Invention

[0003] Some exemplary embodiments of the inventive concept provide image sensors with improved reliability. In some exemplary embodiments, the image sensor may include an antireflective coating to reduce reflectivity at the light-incident surface of the microlens array, thereby improving the efficiency of the image sensor. The antireflective coating may include oxide films, etc.

[0004] According to some exemplary embodiments of the inventive concept, an image sensor may include a sensor substrate comprising a plurality of first pixels and a plurality of second pixels, wherein the plurality of first pixels are configured to sense light of a first wavelength, and the plurality of second pixels are configured to sense light of a second wavelength different from the first wavelength. The image sensor may include a first color filter and a second color filter, respectively, above the sensor substrate and corresponding to the plurality of first pixels and the plurality of second pixels. The image sensor may include a transparent spacer on both the first and second color filters. The image sensor may include at least one microlens array above the transparent spacer, the microlens array comprising a plurality of nanopillars configured to focus incident light onto the plurality of first pixels and the plurality of second pixels. The image sensor may include a plurality of upper antireflective layers on the light-incident surface of the at least one microlens array, wherein the plurality of upper antireflective layers are stacked to overlap each other in a vertical direction perpendicular to the upper surface of the sensor substrate, and the refractive index of the plurality of upper antireflective layers may increase in the vertical direction toward the at least one microlens array.

[0005] According to some exemplary embodiments of the inventive concept, an image sensor may include a sensor substrate comprising a plurality of first pixels and a plurality of second pixels, wherein the plurality of first pixels are configured to sense light of a first wavelength, and the plurality of second pixels are configured to sense light of a second wavelength different from the first wavelength. The image sensor may include a transparent spacer disposed above the sensor substrate. The image sensor may include a first color filter and a second color filter, respectively, between the sensor substrate and the transparent spacer and corresponding to the plurality of first pixels and the plurality of second pixels. The image sensor may include a color filter fence between the first color filter and the second color filter. The image sensor may include a first microlens array above the transparent spacer, the first microlens array comprising a plurality of first nanopillars configured to focus incident light onto the plurality of first pixels and the plurality of second pixels. The image sensor may include a second microlens array above the first microlens array and comprising a plurality of second nanopillars, the plurality of second nanopillars being positioned at a different location in the horizontal direction than the plurality of first nanopillars, such that the plurality of second nanopillars are horizontally offset from the plurality of first nanopillars, extending horizontally parallel to the upper surface of the sensor substrate. The image sensor may include a first etched barrier between a transparent spacer and a first microlens array. The image sensor may include multiple upper antireflective layers on the light-incident surface of the second microlens array. The multiple upper antireflective layers may be stacked to overlap each other in a direction perpendicular to the upper surface of the sensor substrate. The refractive index of the multiple upper antireflective layers may increase toward the second microlens array. The refractive index of each of the multiple upper antireflective layers may be less than the refractive index of the first microlens and greater than the refractive index of air.

[0006] According to some exemplary embodiments of the inventive concept, an image sensor may include a sensor substrate comprising a plurality of first pixels and a plurality of second pixels, wherein the plurality of first pixels are configured to sense light of a first wavelength, and the plurality of second pixels are configured to sense light of a second wavelength different from the first wavelength. The image sensor may include a plurality of lower antireflective layers on an upper surface of the sensor substrate. The image sensor may include a transparent spacer above the plurality of lower antireflective layers. The image sensor may include a first color filter and a second color filter disposed between the sensor substrate and the transparent spacer and corresponding to the plurality of first pixels and the plurality of second pixels, respectively. The image sensor may include a first microlens array above the transparent spacer, the first microlens array comprising a plurality of first nanopillars configured to focus incident light onto the plurality of first pixels and the plurality of second pixels. The image sensor may include a second microlens array disposed above a first microlens array and including a plurality of second nanopillars arranged at horizontally different positions from the plurality of first nanopillars, such that the plurality of second nanopillars are offset horizontally from the plurality of first nanopillars and extend horizontally parallel to the upper surface of the sensor substrate. The image sensor may include a first etch stop between a transparent spacer and the first microlens array. The image sensor may include a plurality of upper antireflective layers on the light-incident surface of the second microlens array. The plurality of upper antireflective layers may be stacked to overlap each other in a vertical direction perpendicular to the upper surface of the sensor substrate. The refractive index of the plurality of upper antireflective layers increases vertically toward the second microlens array. Each of the first and second microlens arrays may be configured to change the phase of a first wavelength of light and then focus the first wavelength of light onto each of the plurality of first pixels, and change the phase of a second wavelength of light and then focus the second wavelength of light onto each of the plurality of second pixels. Attached Figure Description

[0007] The exemplary embodiments will be more clearly understood through the following detailed description taken in conjunction with the accompanying drawings, in which:

[0008] Figure 1 This is a block diagram illustrating an image sensor according to some example embodiments;

[0009] Figure 2 , Figure 3 and Figure 4 This is a diagram illustrating various pixel arrangements in the pixel array of an image sensor according to some example embodiments;

[0010] Figure 5 This is a cross-sectional view of an image sensor according to some example embodiments;

[0011] Figure 6 It is a plan view illustrating the arrangement of pixels in a pixel array according to some example embodiments;

[0012] Figure 7 This is a plan view illustrating the configuration of a microlens array included in an image sensor according to some example embodiments;

[0013] Figure 8 and Figure 9 This is a cross-sectional view of an image sensor according to some example embodiments;

[0014] Figure 10A , Figure 10B , Figure 10C , Figure 10D , Figure 10E , Figure 10F , Figure 10G , Figure 10H , Figure 10I , Figure 10J , Figure 10K and Figure 10L Based on some example implementations Figure 5 A magnified view of region A;

[0015] Figure 11 It is a graph showing the reflectance of the image sensor according to the wavelength of some example implementations;

[0016] Figure 12 It is a graph showing the average reflectance of an image sensor according to some example implementations;

[0017] Figure 13 This is a block diagram of an electronic device including multiple camera modules according to some example embodiments;

[0018] Figure 14 Based on some example implementations Figure 13 Detailed block diagram of the camera module;

[0019] Figure 15 This is a block diagram illustrating the configuration of an image sensor according to some example embodiments;

[0020] Figure 16 This is a block diagram schematically illustrating an electronic device including an image sensor according to some example embodiments; and

[0021] Figure 17 This is an illustrative representation based on some example implementations. Figure 16 A block diagram of the camera module. Detailed Implementation

[0022] Because the exemplary embodiments described herein allow for various variations and forms, some exemplary embodiments will be shown and described in detail in the accompanying drawings. However, this is not intended to limit the exemplary embodiments to a particular mode of practice. The exemplary embodiments described below are examples, and various modifications can be made from these exemplary embodiments.

[0023] Any and all examples or examples of language provided herein are intended only to describe the inventive concept in more detail and do not constitute a limitation on the scope of the inventive concept unless otherwise required.

[0024] Unless otherwise specified, in this specification, the vertical direction may be defined as the Z-direction, and the first horizontal direction and the second horizontal direction may each be defined as a horizontal direction perpendicular to the Z-direction. The first horizontal direction may be referred to as the X-direction, and the second horizontal direction may be referred to as the Y-direction. Vertical horizontal may refer to the height level in the vertical direction (Z-direction). Vertical horizontal may refer to the distance in the vertical direction (Z-direction) from the reference structure and / or surface (e.g., from the upper surface 110S of the sensor substrate 110). The horizontal width in the first horizontal direction may refer to the length in the horizontal direction (X-direction and / or Y-direction), and the vertical length may refer to the length in the vertical direction (Z-direction).

[0025] To clearly illustrate the inventive concept in the accompanying drawings, parts unrelated to the description have been omitted, and similar parts are given similar reference numerals throughout the specification.

[0026] Furthermore, a statement written in the singular can be interpreted as either singular or plural unless explicit expressions such as "a" or "single" are used. Ordinal terms, such as first, second, etc., can be used to describe various elements, but these elements are not limited by these terms. These terms can be used to distinguish one component from another.

[0027] Throughout this specification, the term "connection" means not only that two or more components are directly connected, but may also mean that two or more components are indirectly connected through another component. Furthermore, unless explicitly stated otherwise, the word "comprising" and variations such as "including" or "containing…" shall be understood to imply the inclusion of the stated elements, but not to exclude any other elements.

[0028] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it may be directly on the other element, or an intervening element may be present. Conversely, when an element is referred to as being "directly on" another element, no intervening element is present. Furthermore, when an element is referred to as being "above" or "on" a reference element, it may be located above or below the reference element, and does not necessarily have to be referred to as being "above" or "on" in a direction opposite to gravity.

[0029] It will be understood that elements and / or properties (e.g., structure, surface, orientation, etc.) that are described as "perpendicular", "parallel", "coplanar" or "perpendicular" relative to other elements and / or their properties (e.g., structure, surface, orientation, etc.) may be "perpendicular", "parallel", "coplanar", or may be "substantially perpendicular", "substantially parallel", "substantially coplanar" respectively.

[0030] An element and / or its properties that are “substantially perpendicular,” “substantially parallel,” or “substantially coplanar” relative to other elements and / or their properties (e.g., structure, surface, orientation, etc.) will be understood as being “perpendicular,” “parallel,” or “coplanar” relative to other elements and / or their properties, respectively, within manufacturing and / or material tolerances, and / or having a deviation from “perpendicular,” “parallel,” or “coplanar” in magnitude and / or angle equal to or less than 10% (e.g., ±10% tolerance) relative to other elements and / or their properties.

[0031] It will be understood that a surface that can be described as “flat” can be understood as “planar” or “substantially planar.” A surface that can be described as “planar” can be “planar” or “substantially planar.” A “substantially planar” surface will be understood as a surface that is “planar” within manufacturing and / or material tolerances, and / or has a portion of the surface that has a deviation from “planar” in magnitude and / or angle equal to or less than 10% (e.g., ±10% tolerance) relative to other portions of the surface.

[0032] It will be understood that an element and / or its properties may be described herein as “the same,” “identical,” or “equal” to other elements and / or their properties. It will be further understood that elements and / or their properties described herein as “the same,” “identical,” or “equal” to other elements and / or their properties may be “the same,” “identical,” or “equal,” or “substantially the same,” “substantially identical,” or “substantially equal” to other elements and / or their properties. Elements and / or their properties that are “substantially the same,” “substantially identical,” or “substantially equal” to other elements and / or their properties will be understood to include elements and / or their properties that are the same, identical, or equal to other elements and / or their properties within manufacturing tolerances and / or material tolerances. Elements and / or their properties that are the same or substantially the same, equal, or substantially equal to other elements and / or their properties, and / or the same or substantially identical, may be structurally the same or substantially the same, functionally the same or substantially the same, and / or composed of the same or substantially the same. While the terms “the same,” “equal,” or “identical” may be used in the description of some exemplary embodiments, it should be understood that some imprecision may exist. Therefore, when an element or property is described as being the same, equal, or identical to another element or property, it should be understood that the element or property is identical to the other element or property within the expected manufacturing or operating tolerance range (e.g., ±10%).

[0033] It will be understood that elements and / or properties described herein as "substantially" identical, equal, and / or the same cover elements and / or properties with a relative difference in magnitude equal to or less than 10%. Furthermore, regardless of whether the elements and / or properties are modified to "substantially," it will be understood that these elements and / or properties should be interpreted as including manufacturing or operational tolerances (e.g., ±10%) centered on said elements and / or properties.

[0034] When the terms “about” or “substantially” are used in conjunction with numerical values ​​in this specification, they mean that the associated numerical value includes manufacturing or operational tolerances (e.g., ±10%) centered on said numerical value. Furthermore, when the terms “about” and “substantially” are used in conjunction with geometry, they mean that precision of the geometry is not required, but the tolerance of the shape is within the scope of this disclosure. Moreover, regardless of whether a numerical value or shape is modified with “about” or “substantially,” it will be understood that such numerical values ​​and shapes should be interpreted as including manufacturing or operational tolerances (e.g., ±10%) centered on said numerical value or shape. When a range is specified, the range includes all values ​​within that range, such as increments of 0.1%.

[0035] As described herein, when an operation is described as being performed, or when an effect such as a structure is described as being established “by” or “via” the performance of an additional operation, it will be understood that the operation may be performed “based on” the additional operation and / or the effect / structure may be established, which may include performing the additional operation alone or in combination with other additional operations.

[0036] As described herein, an element described as being generally and / or "spaced apart" from another element in a particular direction (e.g., vertically spaced apart, laterally spaced apart, etc.) and / or described as "separated" from said other element can be understood as being generally and / or isolated from said other element in a particular direction without direct contact (e.g., isolated from said other element in the vertical direction without direct contact, isolated from said other element in the lateral or horizontal direction without direct contact, etc.). Similarly, elements described as being generally and / or "spaced apart" from each other in a particular direction (e.g., vertically spaced apart, laterally spaced apart, etc.) and / or described as "separated" from each other can be understood as being generally and / or isolated from each other in a particular direction without direct contact (e.g., isolated from each other in the vertical direction without direct contact, isolated from each other in the lateral or horizontal direction without direct contact, etc.). Similarly, a structure described herein as situated between two other structures to separate those two other structures from each other can be understood as being configured to isolate those two other structures from direct contact.

[0037] Figure 1 This is a block diagram illustrating an image sensor according to some example implementations.

[0038] Reference Figure 1 The image sensor 100, according to the technical spirit of the inventive concept, may include a pixel array 10 and a plurality of circuits for controlling the pixel array 10.

[0039] In some example implementations, the circuitry for controlling the pixel array 10 may include a column driver 20, a row driver 30, a timing controller 40, and a readout circuitry 50.

[0040] Image sensor 100 can operate according to control commands received from image processor 70, and can convert light transmitted from an external object into an electrical signal and output the electrical signal to image processor 70. Image sensor 100 may be a complementary metal-oxide-semiconductor (CMOS) image sensor.

[0041] The pixel array 10 may include a plurality of pixel units PXU having a two-dimensional array structure, which are arranged in a matrix form along a plurality of row lines and a plurality of column lines. In the specification, a row refers to the set of a plurality of unit pixels arranged in the horizontal direction among the plurality of unit pixels included in the pixel array 10, and a column refers to the set of a plurality of unit pixels arranged in the vertical direction among the plurality of unit pixels included in the pixel array 10.

[0042] Each of the plurality of pixel units (PXUs) may have a multi-pixel structure including a plurality of photodiodes. In each of the plurality of pixel units (PXUs), the plurality of photodiodes may receive light transmitted from an object, thereby generating an electric charge. The image sensor 100 may perform an autofocus function by using the phase difference between pixel signals generated by the plurality of photodiodes included in each of the plurality of pixel units (PXUs). Each of the plurality of pixel units (PXUs) may include pixel circuitry for generating a pixel signal from the electric charge generated by the plurality of photodiodes.

[0043] Column driver 20 may include a correlated double sampler, an analog-to-digital converter, etc. The correlated double sampler may be connected via column lines to pixel units PXU included in the row selected by a row selection signal supplied by row driver 30, and can detect reset voltage and pixel voltage by performing correlated double sampling. The analog-to-digital converter can convert the reset voltage and pixel voltage detected by the correlated double sampler into digital signals and transmit the digital signals to readout circuit 50.

[0044] The readout circuit 50 may include latches or buffer circuits, amplifier circuits, etc., capable of temporarily storing digital signals, and can generate image data by temporarily storing or amplifying the digital signals received from the column driver 20. The operating timing of the column driver 20, the row driver 30, and the readout circuit 50 can be determined by the timing controller 40, and the timing controller 40 can be operated by control commands sent by the image processor 70.

[0045] The image processor 70 can perform signal processing on the image data output by the readout circuit 50 and output the processed image data to a display device or store it in a storage device such as a memory. When the image sensor 100 is installed on an autonomous vehicle, the image processor 70 can perform image processing on the image data and send the processed image data to the main controller that controls the autonomous vehicle.

[0046] Figure 2 , Figure 3 and Figure 4 This is a diagram illustrating various pixel arrangements in the pixel array of an image sensor according to some example embodiments.

[0047] The pixel array 10 may include multiple pixels to sense light of different wavelengths. The arrangement of the pixels can be implemented in various ways. For example, Figures 2 to 4 Various example pixel arrangements in the pixel array 10 of the image sensor 100 are shown.

[0048] first, Figure 2 The Bayer pattern, typically used in image sensor 100, is shown. (Refer to...) Figure 2 A unit pattern can comprise four quadrant regions, namely the first to fourth quadrants, which can be blue pixels (B), green pixels (G), red pixels (R), and green pixels (G), respectively. The unit pattern is repeated two-dimensionally in the first direction (X-direction) and the second direction (Y-direction). In other words, in a 2×2 array of unit patterns, two green pixels (G) are arranged diagonally, and one blue pixel (B) and one red pixel (R) are arranged diagonally. Throughout the pixel arrangement, a first row of alternating green pixels (G) and blue pixels (B) in the first direction is repeated in the second direction, along with a second row of alternating red pixels (R) and green pixels (G) in the first direction.

[0049] In addition to the Bayer pattern, the pixels and / or pixel units of the pixel array 10 can be arranged according to various methods, such as the tetra arrangement or the nona arrangement. For example, refer to Figure 3 Pixel array 10 can also be arranged in a CYGM pattern, where magenta pixel M, cyan pixel C, yellow pixel Y, and green pixel G constitute a unit pattern. Furthermore, refer to... Figure 4 The pixel array 10 can also be arranged in an RGBW pattern, where green pixels G, red pixels R, blue pixels B, and white pixels W constitute a unit pattern. Furthermore, although not shown, the unit pattern can have a 3×2 array configuration. Moreover, depending on the color characteristics of the image sensor 100, the pixels of the pixel array 10 can be arranged in various ways (e.g., various arrangements). An example of the pixel array 10 of the image sensor 10 having a Bayer pattern will be described below; however, the operating principle can also be applied to other pixel arrangements besides the Bayer pattern.

[0050] Figure 5 This is a cross-sectional view of an image sensor according to some example implementations.

[0051] Reference Figure 5 According to some example implementations, the image sensor 100a may be included in the above-described references. Figures 1 to 4 The image sensor 100 described herein, and / or may be the one referenced above. Figures 1 to 4The image sensor 100 is described. Image sensor 100a may include a sensor substrate 110 including a plurality of first pixels 111 configured to sense light of a first wavelength and a plurality of second pixels 112 configured to sense light of a second wavelength different from the first wavelength. The first wavelength may be the green region of the visible spectrum (e.g., the green wavelength spectrum). The second wavelength may be the blue region of the visible spectrum (e.g., the blue wavelength spectrum). Third and fourth pixels are not included. Figure 5 The first pixel 111 and the second pixel 112 of the inventive concept can be shown in a cross-sectional view taken along the horizontal direction, but the third and fourth pixels can be shown in another cross-sectional view. That is, the first pixel 111 and the second pixel 112 of the inventive concept can correspond to the third pixel and the fourth pixel. Pixels (e.g., the first pixel 111 and / or the second pixel 112) can include, for example, silicon photodiodes formed in the silicon sensor substrate 110.

[0052] Image sensor 100a may include two or more lower antireflective layers 120 disposed on the upper surface 110S of sensor substrate 110 (e.g., directly or indirectly disposed thereon). Figure 5 In the image sensor 110, the lower antireflective layer 120 may include a first lower antireflective layer 121 and a second lower antireflective layer 122. However, the lower antireflective layer 120 is not limited to this, but may include three, four or more lower antireflective layers. The lower antireflective layer 120 can improve the light utilization efficiency of the pixel array by reducing the light reflected from the upper surface 110S of the sensor substrate 110 in the incident light. In other words, the lower antireflective layer 120 facilitates the sensing of light incident from the outside by the sensor substrate 110. As a result, the image sensor 100a (which may be included in and / or may be the image sensor 100) may have improved light sensitivity, improved light sensing performance and / or image generation performance, improved power efficiency, thereby sensing light and / or generating an image corresponding to the sensed light with reduced power consumption, and / or reducing power consumption without compromising light sensing performance and / or image generation performance, any combination thereof, etc. Each of the first lower antireflective layer 121 and the second lower antireflective layer 122 may be formed with a thickness of about 80 nm to about 120 nm.

[0053] Image sensor 100a may include a first color filter 130a disposed above a first pixel 111 (e.g., at least partially overlapping the first pixel 111 in the Z direction, which may be a direction perpendicular to the upper surface 110S), and a second color filter 130b disposed above a second pixel 112 (e.g., at least partially overlapping the second pixel 112 in the Z direction, which may be a direction perpendicular to the upper surface 110S), the first color filter 130a and the second color filter 130b being disposed above a sensor substrate 110. Although not shown, image sensor 100a may further include a third color filter disposed above a third pixel 113 and a fourth color filter disposed above a fourth pixel 114. For example, the first color filter 130a and the fourth color filter may be green color filters that transmit only green light, the second color filter 130b may be blue color filters that transmit only blue light, and the third color filter may be red color filters that transmit only red light. In the case where the image sensor 100a includes a first microlens array 151 capable of both simple light focusing and color separation, light that has been color-separated to a considerable degree by the first microlens array 151 propagates toward the first to fourth pixels 111, 112, 113, and 114. Therefore, even when using color filters 130a and 130b, light loss can be reduced, minimized, or prevented. By using color filters 130a and 130b, the color purity of the image sensor 100a can be further improved. However, in some example embodiments, color filters 130a and 130b can be omitted. For example, in example embodiments where the color separation efficiency of the first microlens array 151 is sufficiently high to be equal to or greater than a specific color separation efficiency threshold, color filters 130a and 130b can be omitted.

[0054] Even with reduced pixel size, the image sensor 100a, including the aforementioned pixel array, can still provide sufficient light to the pixels because light loss caused by color filters (e.g., organic color filters) is reduced, minimized, or prevented (e.g., loss of incident light reaching the pixels through the image sensor 100a). As a result, the image sensor 100a (which may be included in and / or be part of the image sensor 100) can have improved light sensitivity, improved light sensing performance and / or image generation performance, improved power efficiency, thereby sensing light and / or generating images corresponding to the sensed light with reduced power consumption, and / or reducing power consumption without compromising light sensing performance and / or image generation performance, any combination thereof, etc. Therefore, ultra-high resolution, ultra-small size, and high sensitivity image sensors with hundreds of millions or more pixels can be manufactured. These ultra-high resolution, ultra-small size, and high sensitivity image sensors can be used in various high-performance optical devices or high-performance electronic devices. Such electronic devices may include, but are not limited to, smartphones, mobile phones, cellular phones, personal digital assistants (PDAs), laptops, personal computers (PCs), various portable devices, home appliances, security cameras, medical cameras, automobiles, Internet of Things (IoT) devices, and other mobile or non-mobile computing devices.

[0055] In addition to the image sensor 100a, the electronic device may further include a processor, such as an application processor (AP), configured to control the image sensor, and may run an operating system or application program to control multiple hardware or software components and perform various data processing and calculations. The processor may further include a graphics processing unit (GPU) and / or an image signal processor. Where the processor includes an image signal processor, the processor can be used to store and / or output images (or videos) acquired by the image sensor.

[0056] Image sensor 100a may include a color filter fence 131 disposed between a first color filter 130a and a second color filter 130b (e.g., between the first color filter 130a and the second color filter 130b adjacent to each other in a horizontal direction extending parallel to the upper surface 110S). The color filter fence 131 may also be disposed at the center of each of the first color filter 130a and the second color filter 130b (e.g., in the horizontal direction). That is, the first color filter 130a and the second color filter 130b may each be formed to surround the outer peripheral surface of a separate at least one color filter fence 131. The color filter fences 131 may be arranged to be spaced apart at equal intervals in the horizontal direction. The intervals between the color filter fences 131 in the horizontal direction are not limited to... Figure 5The spacing is shown. The image sensor 100a may include a passivation layer 131a between the color filter fence 131 and the lower antireflective layer 120 and the first and second color filters 130a and 130b. The material of the passivation layer 131a may include, for example, SiO2.

[0057] Image sensor 100a may include a transparent spacer 140 disposed on both the first color filter 130a and the second color filter 130b (e.g., disposed directly or indirectly thereon). Reference will be made below. Figure 6 Describe spacer 140 in detail.

[0058] Image sensor 100a may include a first microlens array 151 and a first etch stop ES1 disposed between spacer 140 and the first microlens array 151 (e.g., disposed directly or indirectly between spacer 140 and the first microlens array 151).

[0059] The first microlens array 151 may include first nanopillars NP1 and a first dielectric layer DL1. The first nanopillars NP1 are supported by spacers 140, have a high refractive index, and alter the phase of incident light. The first dielectric layer DL1 is formed of a low-refractive-index dielectric having a lower refractive index than that of the first nanopillars NP1 and is disposed between the first nanopillars NP1 (e.g., the first dielectric layer DL1 may extend between directly adjacent first nanopillars NP1 in a horizontal direction parallel to the upper surface 110S). The dielectric material of the first dielectric layer DL1 may include, for example, air or SiO2. The diameters of the first nanopillars NP1 may differ from one another. The horizontal spacing between the first nanopillars NP1 (e.g., between directly adjacent first nanopillars NP1) may differ from one another.

[0060] Furthermore, the first microlens array 151 can focus incident light regardless of wavelength, and can also change the phase of the incident light according to its wavelength before focusing it. In some example embodiments, the first microlens array 151 can be divided into a green light focusing region for focusing green light, a blue light focusing region for focusing blue light, and a red light focusing region for focusing red light.

[0061] The first microlens array 151 may include first nanopillars NP1, the size, shape, spacing, and / or arrangement of which are determined such that the first nanopillars NP1 are configured to separate and focus green light onto first pixel 111 and fourth pixel 114, separate and focus blue light onto second pixel 112, and separate and focus red light onto third pixel 113. Furthermore, the thickness of the first microlens array 151 in the third direction (Z direction) may be similar to (e.g., equal to) the height of the first nanopillars NP1 in the third direction, and may be from about 500 nm to about 1500 nm.

[0062] To design a first microlens array 151 for color separation, the structure of the regions corresponding to green, blue, red, and infrared pixels can be improved or optimized while evaluating the performance of multiple candidate color-separating lens arrays based on evaluation factors such as color separation spectrum, optical efficiency, or signal-to-noise ratio. For example, the structure of the regions corresponding to green, blue, and red pixels can be improved or optimized by pre-determining a target value for each of the multiple evaluation factors and then reducing or minimizing the sum of the differences from the target values ​​of the evaluation factors. Alternatively, the structure of the regions corresponding to green, blue, and red pixels can be improved or optimized by creating a performance index for each evaluation factor and increasing or maximizing the value representing the performance.

[0063] The first microlens array 151 may further include a plurality of first etch barriers ES1 disposed below each of the first nanopillars NP1. For example, the first microlens array 151 may include a plurality of first etch barriers ES1 below each individual corresponding first nanopillar NP1. Each first etch barrier ES1 may be disposed between its corresponding first nanopillar NP1 (e.g., a single one of the first nanopillars NP1) and the spacer 140 to protect the spacer 140 from damage during the formation of the first nanopillar NP1. The first etch barrier ES1 may include a transparent dielectric material having relatively high etch selectivity relative to the spacer 140. For example, the first etch barrier ES1 may include at least one material selected from alumina (AlO), hafnium oxide (HfO), and silicon nitride (SiN). The first etch barrier ES1 has a thickness that allows it to perform the function of protecting the underlying layer (i.e., the spacer 140) without impairing the optical properties of the first microlens array 151. The thickness of the first etch barrier ES1 may be, for example, from about 3 nm to about 50 nm, or from about 5 nm to about 15 nm.

[0064] Furthermore, to reduce or minimize the increase in reflectivity caused by the first etch block ES1, the first etch block ES1 can be arranged to not completely cover (e.g., not completely overlap in the Z direction, directly contact or spaced in the Z direction) the entire surface of the spacer 140. In other words, the first etch block ES1 can be arranged to cover only a limited portion of the upper surface of the spacer 140 (e.g., overlap in the Z direction, directly contact or spaced in the Z direction). For example, each first etch block ES1 is arranged only below its corresponding first nanopillar NP1 in the vertical direction (e.g., the Z direction), and the first etch blocks ES1 are spaced apart from each other in the horizontal direction (e.g., the X and / or Y directions), such that the upper surface of the spacer 140 can directly contact the lower surface of the first dielectric layer DL1 in the region between the first etch blocks ES1 (e.g., between first etch blocks ES1 that are directly adjacent in the X and / or Y directions). Because the refractive index of spacer 140 and the refractive index of the first dielectric layer DL1 are equal or substantially equal, almost no reflection occurs at the interface between spacer 140 and the first dielectric layer DL1 (e.g., no reflection or substantially no reflection). Therefore, by reducing or minimizing the total area of ​​the first etch stop ES1, the increase in reflectivity at the interface between spacer 140 and the first etch stop ES1 can be minimized.

[0065] Image sensor 100a may include a light incident surface disposed on the first microlens array 151 (e.g., Figure 5 Two or more upper antireflective layers 160 on the uppermost surface of the material (e.g., arranged directly or indirectly thereon). Figure 5 The diagram shows multiple upper anti-reflective layers 160 comprising three layers, but as... Figure 8 As shown, the plurality of upper antireflective layers 160 may include four layers, and although not shown in the figures, may include four or more layers.

[0066] In some example embodiments, the plurality of upper antireflective layers 160 may include a first upper antireflective layer 161, a second upper antireflective layer 162, and a third upper antireflective layer 163. The first upper antireflective layer 161, the second upper antireflective layer 162, and the third upper antireflective layer 163 may be stacked to overlap each other in the vertical direction (Z direction). The first upper antireflective layer 161 may be located at the uppermost surface of the plurality of upper antireflective layers 160, the second upper antireflective layer 162 may be disposed on the lower surface of the first upper antireflective layer 161 (e.g., directly below it), and the third upper antireflective layer 163 may be disposed on the lower surface of the second upper antireflective layer 162 (e.g., directly below it). Therefore, the vertical level of the third upper antireflective layer 163 may be the lowest. The refractive index of the plurality of upper antireflective layers 160 may be less than the refractive index of the first microlens array 151 and greater than the refractive index of air. For example, the refractive index of the plurality of upper antireflective layers 160 (e.g., the refractive index of each of the plurality of upper antireflective layers 160) may be less than the refractive index of the first microlens array 151 and greater than the refractive index of air. In some example embodiments, when the refractive index of the first microlens array 151 is about 1.69, the refractive index of each of the first upper antireflective layer 161, the second upper antireflective layer 162, and the third upper antireflective layer 163 may be less than 1.69 and greater than 1. Each of the plurality of upper antireflective layers 160 may comprise at least one material selected from Al2O3, HfO, SiO2, AlOC, AlON, AlOCN, Ta2O5, and TiO2, or any combination thereof. For example, each of the first upper antireflective layer 161, the second upper antireflective layer 162, and the third upper antireflective layer 163 may independently comprise at least one material selected from Al2O3, HfO, SiO2, AlOC, AlON, AlOCN, Ta2O5, and TiO2, or any combination thereof.

[0067] The first upper antireflective layer 161, the second upper antireflective layer 162, and the third upper antireflective layer 163 may have increasing refractive indices toward the first microlens array 151 (e.g., their respective refractive indices) (e.g., increasing as the distance between a given upper antireflective layer and the first microlens array 151 in the Z direction decreases). For example, each given upper antireflective layer 160 may have a larger refractive index than another upper antireflective layer 160 located between the first microlens array 151 and the other upper antireflective layer 160 in the Z direction, such that the given upper antireflective layer is closer to the first microlens array 151 in the Z direction than the other upper antireflective layer. In some example embodiments, the refractive index of the second upper antireflective layer 162 may be lower than (e.g., less than) the refractive index of the third upper antireflective layer 163 and greater than the refractive index of the first upper antireflective layer 161. In some example embodiments, in the vertical direction (Z direction), for every 100 nm of the thickness of each of the plurality of upper antireflective layers 160, the refractive index of each of the plurality of upper antireflective layers 160 may increase linearly by about 0.2. In some example embodiments, in the vertical direction (Z direction) (e.g., between the uppermost surface 160u of the plurality of upper antireflective layers 160 (which may be defined by the uppermost surface 161u of the first upper antireflective layer 161) and the lowermost surface 160r of the plurality of upper antireflective layers 160 (which may be defined by the lowermost surface 163r of the third upper antireflective layer 163)), for every 100 nm of the total thickness 160T of the plurality of upper antireflective layers 160, the refractive index of the plurality of upper antireflective layers 160 may increase linearly by about 0.2. That is, as the total thickness 160T of the multiple upper antireflective layers 160 passing through the vertical horizontal plane in the Z direction (e.g., towards the upper surface 110S, from the uppermost surface 160u to the lowermost surface 160r), decreases, the refractive index at the vertical horizontal plane can increase. For example, as the total thickness 160T of the multiple upper antireflective layers 160 passing through the vertical horizontal plane in the Z direction (e.g., in the Z direction from the uppermost surface 160u towards the upper surface 110S and / or to the lowermost surface 160r), decreases, the refractive index of the portion of the upper antireflective layer 160 at the vertical horizontal plane can increase.In some example implementations, the refractive index of a given individual upper antireflective layer (e.g., each of the plurality of upper antireflective layers 160) through the thickness of the given individual upper antireflective layer in the Z direction may be constant or substantially constant, and each pair of directly adjacent (e.g., contacting) upper antireflective layers (e.g., an overlying upper antireflective layer and an underlying upper antireflective layer directly below and in direct contact with the overlying upper antireflective layer) of the plurality of upper antireflective layers 160 may be different, such that the underlying directly adjacent upper antireflective layer has a larger refractive index than the overlying directly adjacent upper antireflective layer, such that as the total thickness 160T through the plurality of upper antireflective layers 160 decreases vertically from the uppermost surface 160u to the lowermost surface 160r, the refractive index increases in a stepwise manner between the individual (e.g., directly adjacent) upper antireflective layers. A step change in refractive index across the total thickness 160T of the multiple upper antireflective layers in the Z direction (e.g., a step change in refractive index between individual (e.g., directly adjacent) upper antireflective layers) can correspond to a linear increase in refractive index as a function of the thickness across the multiple upper antireflective layers 160 from the uppermost surface 160u to the lowermost surface 160r (e.g., an increase of approximately 0.2 per 100 nm for the total thickness 160T of the multiple upper antireflective layers 160 from the uppermost surface 160u to the lowermost surface 160r). In some example embodiments, the refractive index of a given individual upper antireflective layer can increase across the thickness of the given individual upper antireflective layer from the uppermost surface to the lowermost surface of the given individual upper antireflective layer (e.g., towards the upper surface 110S), for example, the refractive index can increase at a linear rate across the thickness of the given individual upper antireflective layer as a function of the thickness in the Z direction. In some example embodiments, where the first upper antireflective layer 161 has a refractive index of about 1.22 and a thickness of 1000 angstroms (Å), the second upper antireflective layer 162 may have a refractive index of about 1.35 and a thickness of 1000 angstroms (Å). In some example embodiments, where the second upper antireflective layer 162 has a refractive index of about 1.35 and a thickness of 1000 angstroms (Å), the third upper antireflective layer 163 may have a refractive index of about 1.46 and a thickness of 1000 angstroms (Å).

[0068] In the upper antireflective layer 160, the refractive index increases as the vertical horizontal decreases (e.g., towards the upper surface 110S in the Z direction). Therefore, when incident light enters the first microlens array 151 (e.g., incident light that passes through multiple upper antireflective layers 160 and is incident on the first microlens array 151), it is diverted from the light incident surface of the first microlens array 151 (e.g., Figure 5When the uppermost surface (151u) of the light is reflected, the propagation path of the reflected light is formed from the region with a higher refractive index to the region with a lower refractive index. Therefore, because the reflected incident light propagates from the upper antireflective layer with a higher refractive index (e.g., the third upper antireflective layer 163) to the upper antireflective layer with a lower refractive index (e.g., the second upper antireflective layer 162), total internal reflection or refraction occurs at the boundary between the upper antireflective layers (e.g., at the boundary or interface between the second upper antireflective layer 162 and the third upper antireflective layer 163), resulting in low-frequency reflection (e.g., a reduction in the amount of incident light reflected from the first microlens array 151 through the entire thickness of the plurality of upper antireflective layers 160 in the Z direction from the image sensor 100). Consequently, the intensity of the reflected light (e.g., the intensity of the incident light reflected from the image sensor 100a through the uppermost surface 161u of the first upper antireflective layer 161 (also referred to herein as the light incident surface of the first upper antireflective layer 161 and / or the light incident surfaces of the plurality of upper antireflective layers 160)) is reduced. In some example implementations, when incident light is reflected from the third upper antireflective layer 163 to the second upper antireflective layer 162, and the angle of incidence of the reflected incident light is greater than a critical angle determined by the refractive index of each of the third upper antireflective layer 163 and the second upper antireflective layer 162, the incident light undergoes total internal reflection at the boundary between the third upper antireflective layer 163 and the second upper antireflective layer 162 (e.g., the incident light is totally reflected back from the lower surface of the second upper antireflective layer 162 to the third upper antireflective layer 163). The aforementioned path of incident light is the same for the boundary between the first upper antireflective layer 161 and the second upper antireflective layer 162, and can also be applied in the same way to the boundary between the first microlens array 151 and the third upper antireflective layer 163. As a result, the plurality of upper antireflective layers 160 (also referred to herein as antireflective films) can cause the image sensor 100a to have reduced, minimized, or prevented reflections at the light-incident surface of the first microlens array 151 (e.g., at the uppermost surface 151u). As a result, image sensor 100a (which may be included in and / or be image sensor 100) may have improved light sensitivity, improved light sensing performance and / or image generation performance, improved power efficiency, thereby sensing light and / or generating an image corresponding to the sensed light with reduced power consumption, and / or reducing power consumption without compromising light sensing performance and / or image generation performance, any combination thereof, etc.

[0069] The thicknesses of the first upper antireflective layer 161, the second upper antireflective layer 162, and the third upper antireflective layer 163 may be different from each other. The thickness of each of the first upper antireflective layer 161, the second upper antireflective layer 162, and the third upper antireflective layer 163 may be from about 100 angstroms (Å) to about 2000 angstroms (Å).

[0070] Figure 6 It is a plan view showing the arrangement of pixels in a pixel array according to some example embodiments.

[0071] Figure 6 The arrangement of pixels in the pixel array 10 of the image sensor 100 is shown, which has the following characteristics: Figure 2 The Bayer pattern arrangement is shown. This arrangement is used to sense incident light in a unit pattern such as a Bayer pattern. For example, the first pixel 111 and the fourth pixel 114 can be green pixels configured to sense green light, the second pixel 112 can be a blue pixel configured to sense blue light, and the third pixel 113 can be a red pixel configured to sense red light. In a unit pattern in the form of a 2×2 array, the first pixel 111 and the fourth pixel 114, which are green pixels, can be arranged in one diagonal direction, and the second pixel 112 and the third pixel 113, which are blue pixels and red pixels respectively, can be arranged in the other diagonal direction.

[0072] Refer again Figure 5 A spacer 140 is disposed between the sensor substrate 110 and the first microlens array 151 to be configured to maintain a constant spacing (e.g., a constant spacing in the Z direction) between the sensor substrate 110 and the first microlens array 151. The spacer 140 (which may be interchangeably referred to herein as a transparent spacer) may comprise a dielectric material transparent to visible light, such as SiO2 or silanol-based glass (e.g., siloxane spin-coated glass (SOG)), having a lower refractive index than the first nanopillars NP1 of the first microlens array 151 (e.g., their respective refractive indices), and a low absorption coefficient in the visible light band. The thickness of the spacer 140 (e.g., in the Z direction) may be determined based on the focal length of the light focused by the first microlens array 151, and may be selected, for example, in the range of about 0.5 to about 1.5 times the focal length of the light at a reference wavelength λ0.

[0073] Assuming the reference wavelength λ0 is 540 nm, which is green light, the pitch of pixels 111, 112, 113, and 114 (e.g., in the X and / or Y directions) is 0.8 μm, the refractive index n of spacer 140 at a wavelength of 540 nm is 1.46, the focal length f of the green light (i.e., the distance between the lower surface of the first microlens array 151 and the point where the green light converges (e.g., in the Z direction)) can be about 1.64 μm, and the thickness of spacer 140 (e.g., in the Z direction) can be selected in the range of about 0.82 μm to about 2.46 μm.

[0074] The first microlens array 151 may include first nanopillars NP1 and a first dielectric layer DL1. The first nanopillars NP1 are supported by spacers 140, have a high refractive index, and are configured to change the phase of incident light. The first dielectric layer DL1 is formed of a low-refractive-index dielectric having a lower refractive index than that of the first nanopillars NP1 and is disposed between the first nanopillars NP1 (e.g., between first nanopillars NP1 directly adjacent in the horizontal direction). The dielectric material of the first dielectric layer DL1 may include, for example, air or SiO2.

[0075] Figure 7 This is a plan view illustrating the configuration of a microlens array included in an image sensor according to some example embodiments.

[0076] Reference Figure 7 In some example embodiments, the plurality of first microlens arrays 151 arranged in the pixel array 10 may include first to fourth lenses 151a, 151b, 151c, and 151d to focus incident light only onto the first to fourth pixels 111, 112, 113, and 114 without color separation. For example, the first to fourth lenses 151a, 151b, 151c, and 151d can simply focus incident light onto the corresponding first to fourth pixels 111, 112, 113, and 114, respectively, and color separation can occur in color filters 130a and 130b. Furthermore, in some example embodiments, the first microlens array 151 can focus light, and can also change the phase of the light according to the wavelength of the light before focusing it. In some example implementations, the phase of a first wavelength of light can be changed, and then the first wavelength of light can be focused onto each first pixel 111; the phase of a second wavelength of light can be changed, and then the second wavelength of light can be focused onto each second pixel 112; the phase of a third wavelength of light can be changed, and then the third wavelength of light can be focused onto each third pixel 113; and the phase of a fourth wavelength of light can be changed, and then the fourth wavelength of light can be focused onto each fourth pixel 114. In addition to the focusing of specific wavelengths via the first microlens array 151, color separation may occur independently and repeatedly in color filters 130a and 130b. Reference will be made below. Figure 7The following describes the case where only focusing is performed. To focus the incident light, a plurality of first nanopillars NP1 in each of the first to fourth lenses 151a, 151b, 151c, and 151d can be arranged symmetrically with respect to the center of each of the first to fourth lenses 151a, 151b, 151c, and 151d in a first direction (X direction) and a second direction (Y direction). Specifically, the first nanopillars NP1 arranged in the central region of each of the first to fourth lenses 151a, 151b, 151c, and 151d can have the largest diameter, such that the largest phase delay occurs in the central region of each of the first to fourth lenses 151a, 151b, 151c, and 151d, and the diameter of the first nanopillars NP1 can gradually decrease from the central region of each of the first to fourth lenses 151a, 151b, 151c, and 151d.

[0077] exist Figure 7 In the first microlens array 151 shown, the first to fourth lenses 151a, 151b, 151c, and 151d can serve as corresponding lenses for all the first to fourth photosensitive units of the corresponding first to fourth pixels 111, 112, 113, and 114. In some example embodiments, the first microlens array 151 can be configured to form a focal point on each of the first to fourth photosensitive units of the first to fourth pixels 111, 112, 113, and 114.

[0078] Simultaneously, the spacer 140 can provide a flat (e.g., planar or substantially planar) surface, allowing the first microlens array 151 to be formed on the color filters 130a and 130b. Furthermore, the spacer 140 can serve as a spacer, together with the color filters 130a and 130b, to provide a distance (e.g., in the Z direction) between the sensor substrate 110 and the first microlens array 151. The distance (e.g., in the Z direction) between the sensor substrate 110 and the first microlens array 151 can be determined by the focal length of the first microlens array 151. For example, the thickness of the spacer 140 (e.g., in the Z direction) and the thickness of the color filters 130a and 130b can be equal to the focal length of the first microlens array 151. Therefore, light concentrated by the first microlens array 151 can be focused onto the sensor substrate 110. When the focal length of the first microlens array 151 is sufficiently short, the spacer 140 can be omitted.

[0079] Figure 8 and Figure 9 This is a cross-sectional view of an image sensor according to some example implementations. Figure 8 An image sensor 100b according to some example embodiments is shown, which may be included as shown above. Figures 1 to 4The image sensor 100 described is and / or may be the image sensor 100. Figure 9 An image sensor 100c according to some example embodiments is shown, which may include the image sensor 100c as shown above. Figures 1 to 4 The image sensor 100 described is and / or may be the image sensor 100.

[0080] Reference Figure 8 and Figure 9 as well as Figure 5 The main description is related to Figure 5 The differences.

[0081] Reference Figure 8 The upper anti-reflective layer 160 included in the image sensor 100b may include four layers. The upper anti-reflective layer 160 may further include a fourth upper anti-reflective layer 164. However, the number of layers (e.g., quantity) of the upper anti-reflective layer 160 is not limited thereto and may be four or more layers. The fourth upper anti-reflective layer 164 may be disposed below the third upper anti-reflective layer 163. The refractive index of the fourth upper anti-reflective layer 164 may be greater than the refractive index of the third upper anti-reflective layer 163 and less than the refractive index of the first microlens array 151. Even in Figure 8 In the case of a vertical direction (Z direction), for every 100 nm of the thickness of each of the plurality of upper antireflective layers 160, the refractive index of each of the plurality of upper antireflective layers 160 can increase linearly by about 0.2. That is, as the vertical level decreases (e.g., a portion of the upper antireflective layer 160 decreases in distance from the upper surface 110S in the Z direction), the refractive index can increase. In some example embodiments, where the third upper antireflective layer 163 has a refractive index of about 1.46 and a thickness of 1000 angstroms (Å), the fourth upper antireflective layer 164 can have a refractive index of about 1.67 and a thickness of 1000 angstroms (Å).

[0082] Reference Figure 9Image sensor 100c may include two microlens arrays. In some example embodiments, image sensor 100c may include a first microlens array 151 and a second microlens array 152. The second microlens array 152 may be disposed above the first microlens array 151. That is, light incident on image sensor 100c may first pass through the second microlens array 152 and then through the first microlens array 151. The thicknesses of the first microlens array 151 and the second microlens array 152 may be substantially equal to each other. The second microlens array 152 may include second nanopillars NP2 and a second dielectric layer DL2. The second nanopillars NP2 have a high refractive index and change the phase of the incident light. The second dielectric layer DL2 is disposed between the second nanopillars NP2 and is formed of a low-refractive-index dielectric having a lower refractive index than that of the second nanopillars NP2. The second nanopillars NP2 and the second dielectric layer DL2 may be made of the same or substantially the same material as the first nanopillars NP1 and the first dielectric layer DL1. In some example embodiments, the horizontal position of the second nanopillar NP2 may differ from the horizontal position of the plurality of first nanopillars NP1. For example, the first nanopillars NP1 may at least partially or completely not overlap with the second nanopillars NP2, or the first nanopillars NP1 may at least partially or completely expose themselves from the second nanopillars NP2 in the Z direction, and the second nanopillars NP2 may at least partially or completely expose themselves from the first nanopillars NP1 in the Z direction. That is, a first dielectric layer DL1 may be disposed on the underside of the second nanopillars NP2, instead of the same first nanopillars NP1 (e.g., the underside of each second nanopillar NP2 may overlap with the first dielectric layer DL1 in the Z direction). Like the first microlens array 151, the second microlens array 152 is capable not only of simple light focusing but also of color separation. Each of the first microlens array 151 and the second microlens array 152 included in the image sensor 100c may be able to focus light only, or may be able to change the phase of light of a first wavelength and then focus the light of the first wavelength onto each first pixel, and change the phase of light of a second wavelength and then focus the light of the second wavelength onto each second pixel.

[0083] In some example embodiments, both the first microlens array 151 and the second microlens array 152 are capable of focusing only the incident light. In some example embodiments, both the first microlens array 151 and the second microlens array 152 are capable of changing the phase of the incident light according to its wavelength, and then focusing the incident light onto each pixel corresponding to that wavelength. In some example embodiments, the first microlens array 151 may be capable of focusing only all the incident light, and the second microlens array 152 may be capable of changing the phase of the incident light according to its wavelength, and then focusing the incident light onto each pixel corresponding to that wavelength. In some example embodiments, the first microlens array 151 is capable of changing the phase of the incident light according to its wavelength, and then focusing the incident light onto each pixel corresponding to that wavelength, while the second microlens array 152 is capable of focusing only all the incident light.

[0084] The image sensor 100c may further include a second etch stop ES2 disposed between the first microlens array 151 and the second microlens array 152. The second etch stop ES2 may be substantially the same as the first etch stop ES1.

[0085] Figures 10A to 10L Based on some example implementations Figure 5 A magnified view of region A.

[0086] Reference Figure 10A The upper antireflective layer 160a can be disposed on the upper surface of the first microlens array 151 (e.g., directly or indirectly disposed thereon). However, the example embodiment is not limited thereto, and the upper antireflective layer 160a can also be disposed on the upper surface of the second microlens array. The upper antireflective layer 160a may include a first upper antireflective layer 161a, a second upper antireflective layer 162a, and a third upper antireflective layer 163a. ​​Apertures 161ah can be formed in the first upper antireflective layer 161a. The apertures can be exposed to the outside. The apertures 161ah formed in the first upper antireflective layer 161a can be arranged in a two-dimensional periodic pattern (e.g., spaced apart according to a periodic interval). The cross-sectional area of ​​the apertures 161ah formed in the first upper antireflective layer 161a in the horizontal direction can be constant. No apertures can be formed in the second upper antireflective layer 162a and the third upper antireflective layer 163a. The uppermost surfaces of the first upper antireflective layer 161a, the second upper antireflective layer 162a, and the third upper antireflective layer 163a can be constant (for example, the upper surfaces of the first, second, and third upper antireflective layers 161a, 162a, and 163a can be planar or substantially planar in the X and Y directions).

[0087] Reference Figure 10BAn upper antireflective layer 160b may be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160b may include a first upper antireflective layer 161b, a second upper antireflective layer 162b, and a third upper antireflective layer 163b. Holes 161bh and 162bh may be formed in the first and second upper antireflective layers 161bb and 162bb. Holes 161bh and 162bh formed in the first and second upper antireflective layers 161bb and 162bb may have the same width and position in the horizontal direction, and these holes may be formed sequentially or simultaneously. Hole 161bh may overlap with a separate corresponding hole 162bh in the Z direction. Holes 161bh and 162bh formed in the first and second upper antireflective layers 161bb and 162bb may be arranged in a two-dimensional periodic pattern. No pores can be formed in the third upper antireflective layer 163b.

[0088] Reference Figure 10C An upper antireflective layer 160c can be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160c may include a first upper antireflective layer 161c, a second upper antireflective layer 162c, and a third upper antireflective layer 163c. Apertures 161ch, 162ch, and 163ch can be formed in the first upper antireflective layer 161c, the second upper antireflective layer 162c, and the third upper antireflective layer 163c. Apertures 161ch, 162ch, and 163ch formed in the first upper antireflective layer 161c, the second upper antireflective layer 162c, and the third upper antireflective layer 163c may have the same width and position in the horizontal direction, and may be formed sequentially or simultaneously. Aperture 161ch may overlap with individual corresponding apertures 162ch and 163ch in the Z direction. The holes 161ch, 162ch, and 163ch formed in the first upper antireflective layer 161c, the second upper antireflective layer 162c, and the third upper antireflective layer 163c can be arranged in a two-dimensional periodic pattern. Due to the holes 161ch, 162ch, and 163ch formed in the first upper antireflective layer 161c, the second upper antireflective layer 162c, and the third upper antireflective layer 163c, a portion of the upper surface of the first microlens array 151 can be exposed to the outside.

[0089] Reference Figure 10DAn upper antireflective layer 160d can be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160d may include a first upper antireflective layer 161d, a second upper antireflective layer 162d, and a third upper antireflective layer 163d. Apertures 161dh can be formed in the first upper antireflective layer 161d. The apertures can be exposed to the outside. The cross-sectional area of ​​each aperture 161dh in the horizontal direction can be reduced towards the first microlens array 151. The apertures 161dh formed in the first upper antireflective layer 161d can be arranged in a two-dimensional periodic pattern. No apertures can be formed in the second upper antireflective layer 162d and the third upper antireflective layer 163d. The uppermost surfaces of the first upper antireflective layer 161d, the second upper antireflective layer 162d, and the third upper antireflective layer 163d can be constant (e.g., the upper surfaces of the first, second, and third upper antireflective layers 161d, 162d, and 163d can be planar or substantially planar in the X and Y directions).

[0090] Reference Figure 10E An upper antireflective layer 160e may be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160e may include a first upper antireflective layer 161e, a second upper antireflective layer 162e, and a third upper antireflective layer 163e. Apertures 161eh and 162eh may be formed in the first upper antireflective layer 161e and the second upper antireflective layer 162e. Apertures 161eh and 162eh may be exposed to the outside. The cross-sectional area of ​​each of the plurality of apertures 161eh and 162eh in the horizontal direction may be reduced towards the first microlens array 151. The sidewalls of the holes 161eh and 162eh formed in the first upper antireflective layer 161e and the second upper antireflective layer 162e can be formed continuously (e.g., such that there is no step change in cross-sectional area or shape between the holes 161eh and 162eh at the interface between the bottom of the hole 161eh and the top of the hole 162eh, e.g., such that the holes 161eh and 162eh together define a single hole with a continuously tapering shape, and the width does not change stepwise when passing through the first and second upper antireflective layers 161e and 162e), and can be formed sequentially or simultaneously. The holes 161eh and 162eh formed in the first upper antireflective layer 161e and the second upper antireflective layer 162e can be arranged in a two-dimensional periodic pattern. No holes can be formed in the third upper antireflective layer 163e.

[0091] Reference Figure 10FAn upper antireflective layer 160f can be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160f may include a first upper antireflective layer 161f, a second upper antireflective layer 162f, and a third upper antireflective layer 163f. Apertures 161fh, 162fh, and 163fh can be formed in the first upper antireflective layer 161f, the second upper antireflective layer 162f, and the third upper antireflective layer 163f. Apertures 161fh, 162fh, and 163fh can be exposed to the outside. The cross-sectional area of ​​each of the plurality of apertures 161fh, 162fh, and 163fh in the horizontal direction can be reduced towards the first microlens array 151. The sidewalls of the holes 161fh, 162fh, and 163fh formed in the first upper antireflective layer 161f, the second upper antireflective layer 162f, and the third upper antireflective layer 163f can be formed continuously (e.g., such that at the interface between the bottom of hole 161fh and the top of hole 162fh, there is no step change in cross-sectional area or shape between holes 161fh and 162fh, and at the interface between the bottom of hole 162fh and the top of hole 163fh, there is no step change in cross-sectional area or shape between holes 162fh and 163fh, for example, such that holes 161fh, 162fh, and 163fh together define a single hole with a continuously tapering shape, and the width does not change step when passing through the first to third upper antireflective layers 161f to 163f), and can be formed sequentially or simultaneously. The holes 161fh, 162fh, and 163fh formed in the first upper antireflective layer 161f, the second upper antireflective layer 162f, and the third upper antireflective layer 163f can be arranged in a two-dimensional periodic pattern. Due to the holes 161fh, 162fh, and 163fh formed in the first upper antireflective layer 161f, the second upper antireflective layer 162f, and the third upper antireflective layer 163f, a portion of the upper surface of the first microlens array 151 can be exposed to the outside (e.g., through the holes).

[0092] Reference Figure 10GAn upper antireflective layer 160g can be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160g may include a first upper antireflective layer 161g, a second upper antireflective layer 162g, and a third upper antireflective layer 163g. The third upper antireflective layer 163g, disposed at the lowest position, may include a plurality of holes 163gh arranged in a two-dimensional periodic pattern. A second upper antireflective layer 162g disposed on the third upper antireflective layer 163g may cover the outer surface of the third upper antireflective layer 163g. A first upper antireflective layer 161g disposed on the second upper antireflective layer 162g may cover the outer surface of the second upper antireflective layer 162g. The second upper antireflective layer 162g may be formed to fill the holes 163gh formed in the third upper antireflective layer 163g. The second upper antireflective layer 162g may include a plurality of holes 162gh arranged simultaneously and periodically in a two-dimensional pattern. The first upper antireflective layer 161g can be formed to fill the holes 162gh formed in the second upper antireflective layer 162g. The first upper antireflective layer 161g may include a plurality of holes 161gh arranged simultaneously and periodically in two dimensions. The cross-sectional area of ​​the holes 163gh formed in the third upper antireflective layer 163g in the horizontal direction may be larger than the cross-sectional area of ​​the holes 162gh formed in the second upper antireflective layer 162g in the horizontal direction. The cross-sectional area of ​​the holes 162gh formed in the second upper antireflective layer 162g in the horizontal direction may be larger than the cross-sectional area of ​​the holes 161gh formed in the first upper antireflective layer 161g in the horizontal direction. The holes 162gh and 163gh formed in the second upper antireflective layer 162g and the third upper antireflective layer 163g may not be exposed to the outside, but the holes 161gh formed in the first upper antireflective layer 161g may be exposed to the outside.

[0093] Reference Figure 10HAn upper antireflective layer 160h can be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160h may include a first upper antireflective layer 161h, a second upper antireflective layer 162h, and a third upper antireflective layer 163h. The third upper antireflective layer 163h, disposed at the lowest position, may include a plurality of holes 163hh arranged in a two-dimensional periodic pattern. A second upper antireflective layer 162h disposed on the third upper antireflective layer 163h may cover the outer surface of the third upper antireflective layer 163h. A first upper antireflective layer 161h disposed on the second upper antireflective layer 162h may cover the outer surface of the second upper antireflective layer 162h. The second upper antireflective layer 162h may be formed to fill the holes 163hh formed in the third upper antireflective layer 163h. The second upper antireflective layer 162h may include a plurality of holes 162hh arranged simultaneously and periodically in a two-dimensional pattern. The first upper antireflective layer 161h can be formed to fill the holes 162hh formed in the second upper antireflective layer 162h. The vertical and horizontal orientation of the top surface of the first upper antireflective layer 161h can be constant (e.g., the upper surface of the first upper antireflective layer 161h can be planar or substantially planar in the X and Y directions). The cross-sectional area of ​​the holes 163hh formed in the third upper antireflective layer 163h in the horizontal direction can be larger than the cross-sectional area of ​​the holes 162hh formed in the second upper antireflective layer 162h in the horizontal direction.

[0094] Reference Figure 10I An upper antireflective layer 160i may be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160i may include a first upper antireflective layer 161i, a second upper antireflective layer 162i, and a third upper antireflective layer 163i. The third upper antireflective layer 163i, disposed at its lowest position, may include a plurality of holes 163ih arranged in a two-dimensional periodic pattern. A second upper antireflective layer 162i disposed on the third upper antireflective layer 163i may cover the outer surface of the third upper antireflective layer 163i. A first upper antireflective layer 161i disposed on the second upper antireflective layer 162i may cover the outer surface of the second upper antireflective layer 162i. The second upper antireflective layer 162i may be formed to fill the holes 163ih formed in the third upper antireflective layer 163i. The vertical horizontality of the uppermost surface of each of the first upper antireflective layer 161i and the second upper antireflective layer 162i may be constant (e.g., it may be planar or substantially planar).

[0095] Reference Figure 10JAn upper antireflective layer 160j can be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160j may include a first upper antireflective layer 161j, a second upper antireflective layer 162j, and a third upper antireflective layer 163j. The third upper antireflective layer 163j, disposed at the lowest position, may include a plurality of holes 163jh arranged in a two-dimensional periodic pattern. The cross-sectional area of ​​the third upper antireflective layer 163j in the horizontal direction may be increased toward the first microlens array 151. A second upper antireflective layer 162j disposed on the third upper antireflective layer 163j may cover the outer surface of the third upper antireflective layer 163j. A first upper antireflective layer 161j disposed on the second upper antireflective layer 162j may cover the outer surface of the second upper antireflective layer 162j. The second upper antireflective layer 162j may be formed to fill the holes 163jh formed in the third upper antireflective layer 163j. The second upper antireflective layer 162j may include a plurality of holes 162jh arranged simultaneously and periodically in a two-dimensional manner. The first upper antireflective layer 161j may be formed to fill the holes 162jh formed in the second upper antireflective layer 162j. The first upper antireflective layer 161j may include a plurality of holes 161jh arranged simultaneously and periodically in a two-dimensional manner. The cross-sectional area of ​​the holes 163jh formed in the third upper antireflective layer 163j in the horizontal direction may be larger than the cross-sectional area of ​​the holes 162jh formed in the second upper antireflective layer 162j in the horizontal direction. The cross-sectional area of ​​the holes 162jh formed in the second upper antireflective layer 162j in the horizontal direction may be larger than the cross-sectional area of ​​the holes 161jh formed in the first upper antireflective layer 161j in the horizontal direction. The holes 163jh and 162jh formed in the third upper antireflective layer 163j and the second upper antireflective layer 162j may not be exposed to the outside, but the holes 161jh formed in the first upper antireflective layer 161j may be exposed to the outside.

[0096] Reference Figure 10KAn upper antireflective layer 160k can be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160k may include a first upper antireflective layer 161k, a second upper antireflective layer 162k, and a third upper antireflective layer 163k. The third upper antireflective layer 163k, disposed at its lowest position, may include a plurality of holes 163kh arranged in a two-dimensional periodic pattern. The cross-sectional area of ​​the third upper antireflective layer 163k in the horizontal direction may be increased toward the first microlens array 151. A second upper antireflective layer 162k disposed on the third upper antireflective layer 163k may cover the outer surface of the third upper antireflective layer 163k. A first upper antireflective layer 161k disposed on the second upper antireflective layer 162k may cover the outer surface of the second upper antireflective layer 162k. The second upper antireflective layer 162k may be formed to fill the holes 163kh formed in the third upper antireflective layer 163k. The second upper antireflective layer 162k may include a plurality of holes 162kh arranged simultaneously and periodically in a two-dimensional manner. The first upper antireflective layer 161k may be formed to fill the holes 162kh formed in the second upper antireflective layer 162k. The vertical and horizontal orientation of the top surface of the first upper antireflective layer 161k may be constant, for example, planar or substantially planar. The cross-sectional area of ​​the holes formed in the third upper antireflective layer 163k in the horizontal direction may be greater than the cross-sectional area of ​​the holes 162kh formed in the second upper antireflective layer 162k in the horizontal direction.

[0097] Reference Figure 10L The upper antireflective layer 160l can be disposed on the upper surface of the first microlens array 151. The upper antireflective layer 160l may include a first upper antireflective layer 161l, a second upper antireflective layer 162l, and a third upper antireflective layer 163l. The third upper antireflective layer 163l disposed at the lowest position may include a plurality of holes 163lh arranged in a two-dimensional periodic pattern. The cross-sectional area of ​​the third upper antireflective layer 163l in the horizontal direction may be increased toward the first microlens array 151. The second upper antireflective layer 162l disposed on the third upper antireflective layer 163l may cover the outer surface of the third upper antireflective layer 163l. The first upper antireflective layer 161l disposed on the second upper antireflective layer 162l may cover the outer surface of the second upper antireflective layer 162l. The second upper antireflective layer 162l may be formed to fill the holes 163lh formed in the third upper antireflective layer 163l. The vertical level of the uppermost surface of each of the first upper antireflective layer 161l and the second upper antireflective layer 162l can be constant, for example, such that the uppermost surface of each of the first upper antireflective layer 161l and the second upper antireflective layer 162l can be planar or substantially planar.

[0098] Figure 11 It is a graph showing the reflectivity of the image sensor based on the wavelength according to some example implementations.

[0099] Reference Figure 11 The X-axis represents wavelength. The Y-axis represents the reflectivity (e.g., surface reflectance (%)) of each image sensor. The wavelength band represented by the X-axis is in the range of 400nm to 700nm, which is similar to the wavelength band of visible light. The 520nm wavelength band in the green band will be primarily described. A represents the case where the upper antireflective layer is formed as a single film using an oxide film with related technologies. B represents the case where three upper antireflective layers are formed. C represents the case where four upper antireflective layers are formed. Referring to the graphs, it can be seen that A has the highest reflectivity at approximately 520nm, approximately 8% to 9%. It can be seen that B and C have reflectivity of approximately 5% to 6% at approximately 520nm, relatively lower than A. It can be seen that the peak reflectivity of A is approximately 9.5%, the peak reflectivity of B is approximately 7.0%, and the peak reflectivity of C is approximately 6.6%, with the peak values ​​in the order of highest to lowest being A, B, and C. In other words, it can be seen that, compared to forming a single film, as proposed in the inventive concept, the reflectivity is effectively reduced by forming multiple films with increasing refractive index toward the bottom and by increasing the number of films.

[0100] Figure 12 It is a graph showing the average reflectance of an image sensor according to some example implementations.

[0101] Reference Figure 12 The Y-axis represents the average reflectance of each image sensor (e.g., average reflectance (%)). A, B, and C are referenced above. Figure 11 The descriptions are the same. Referring to the average reflectance of each case, the average reflectance of A is approximately 5.8%. The average reflectance of B is approximately 4%. The average reflectance of C is approximately 4.2%. That is, it can be seen that, in the case of forming multiple films with the refractive index increasing towards the bottom as proposed in the inventive concept, rather than forming a single oxide film of the related technology, the average reflectance in the visible light wavelength band is effectively reduced.

[0102] Figure 13 It is a block diagram of an electronic device that includes multiple camera modules. Figure 14 yes Figure 13 Detailed block diagram of the camera module.

[0103] Reference Figure 13 The electronic device 1000 may include a camera module group 1100, an application processor 1200, a power management integrated circuit (PMIC) 1300, and an external memory 1400.

[0104] The camera module group 1100 may include multiple camera modules 1100a, 1100b and 1100c. Figure 13Some example implementations in which three camera modules 1100a, 1100b, and 1100c are arranged are shown, but the example implementations are not limited thereto. In some example implementations, the camera module group 1100 may be modified to include only two camera modules or to include n camera modules (n is a natural number of 4 or greater).

[0105] Reference Figure 14 The camera module 1100b may include a prism 1105, an optical path folding element (OPFE) 1110, an actuator 1130, an image sensing device 1140, and a storage device 1150.

[0106] Here, the detailed configuration of a camera module 1100b will be described in more detail, but according to some example implementations, the following description can also be applied to other camera modules 1100a and 1100c.

[0107] The prism 1105 may include a reflective surface 1107 of light-reflecting material, thereby altering the path of light incident from the outside.

[0108] In some example embodiments, prism 1105 can change the path of light incident in the first direction (X direction) to a second direction (Y direction) perpendicular to the first direction (X direction). Furthermore, by rotating the reflective surface 1107 of the light-reflecting material about the central axis 1106 in direction A, or by rotating the central axis 1106 in direction B, prism 1105 can change the path of light incident in the first direction (X direction) to a second direction (Y direction) perpendicular to the first direction. In this case, OPFE 1110 can also move in the first direction (X direction), the second direction (Y direction), and a third direction (Z direction).

[0109] In some example implementations, such as Figure 14 As shown, the maximum rotation angle of prism 1105 in direction A is less than or equal to 15° in the positive (+)A direction and greater than 15° in the negative (-)A direction, but the example implementation is not limited to this.

[0110] In some example implementations, prism 1105 can move within 20°, between 10° and 20°, or between 15° and 20° in the positive (+) or negative (-) B direction, wherein prism 1105 can move at the same angle in the positive (+) or negative (-) B direction, or at nearly similar angles (within 1°).

[0111] In some example implementations, the prism 1105 can move the reflective surface 1107 of the light-reflecting material in a third direction (Z direction) parallel to the extension direction of the central axis 1106.

[0112] OPFE 1110 may include, for example, m optical lenses (m being a natural number). The m lenses can be moved in a second direction (Y direction) to change the optical zoom ratio of camera module 1100b. For example, if the basic optical zoom ratio of camera module 1100b is z, the optical zoom ratio of camera module 1100b can be changed to 3z, 5z, 7z, or greater when the m optical lenses included in OPFE 1110 are moved.

[0113] Actuator 1130 can move OPFE 1110 or optical lens to a specific position. For example, actuator 1130 can adjust the position of optical lens so that image sensor 1142 is located at the focal length of optical lens for precise sensing.

[0114] Image sensing device 1140 may include image sensor 1142, control logic 1144, and memory 1146. Image sensor 1142 can sense an image of a target using light provided through an optical lens. Control logic 1144 can control the overall operation of camera module 1100b. For example, control logic 1144 can control the operation of camera module 1100b according to control signals provided via control signal line CSLb.

[0115] The memory 1146 may store information required for the operation of the camera module 1100b, such as calibration data 1147. Calibration data 1147 may include information required by the camera module 1100b to generate image data using light provided from an external source. Calibration data 1147 may include, for example, information about the aforementioned rotation angle, information about the focal length, information about the optical axis, etc. In the case where the camera module 1100b is implemented as a multi-state camera (where the focal length varies depending on the position of the optical lens), calibration data 1147 may include the focal length value of the optical lens for each position (or state) and information related to autofocus.

[0116] Storage device 1150 can store image data sensed by image sensor 1142. Storage device 1150 can be disposed outside image sensing device 1140 and can be implemented as stacked with the sensor chip constituting image sensing device 1140. In some example embodiments, storage device 1150 can be implemented as electrically erasable programmable read-only memory (EEPROM), but the example embodiments are not limited thereto.

[0117] Simultaneously refer to Figure 13 and Figure 14In some example implementations, each of the plurality of camera modules 1100a, 1100b, and 1100c may include an actuator 1130. Therefore, depending on the operation of the actuator 1130 included therein, each of the plurality of camera modules 1100a, 1100b, and 1100c may include the same or different calibration data 1147.

[0118] In some example embodiments, any one of the plurality of camera modules 1100a, 1100b and 1100c (e.g. 1100b) may be a folding lens type camera module including the aforementioned prism 1105 and OPFE 1110, and other camera modules (e.g. 1100a and 1100c) may be vertical type camera modules excluding prism 1105 and OPFE 1110, but the inventive concept is not limited thereto.

[0119] In some example implementations, any one of the plurality of camera modules 1100a, 1100b, and 1100c (e.g., 1100c) may be, for example, a vertical depth camera that extracts depth information using infrared (IR) light. In this case, application processor 1200 may combine image data provided from the depth camera with image data provided from another camera module (e.g., 1100a or 1100b) to generate a three-dimensional (3D) depth image.

[0120] In some example embodiments, at least two of the plurality of camera modules 1100a, 1100b, and 1100c (e.g., 1100a and 1100b) may have different fields of view. In this case, the optical lenses of at least two of the plurality of camera modules 1100a, 1100b, and 1100c (e.g., 1100a and 1100b) may be different from each other, but the inventive concept is not limited thereto.

[0121] Furthermore, in some example embodiments, the fields of view of the multiple camera modules 1100a, 1100b, and 1100c may be different from each other. In this case, the optical lenses included in the multiple camera modules 1100a, 1100b, and 1100c may also be different from each other, but the inventive concept is not limited thereto.

[0122] In some example implementations, the multiple camera modules 1100a, 1100b, and 1100c can be arranged to be physically separate from each other. That is, instead of dividing the sensing area of ​​a single image sensor 1142 for use, the multiple camera modules 1100a, 1100b, and 1100c can be arranged independently within each of the multiple camera modules 1100a, 1100b, and 1100c.

[0123] Return to reference Figure 13The application processor 1200 may include an image processing device 1210, a memory controller 1220, and internal memory 1230. The application processor 1200 may be implemented separately from the multiple camera modules 1100a, 1100b, and 1100c. For example, the application processor 1200 and the multiple camera modules 1100a, 1100b, and 1100c may be implemented as separate semiconductor chips.

[0124] The image processing apparatus 1210 may include a plurality of sub-image processors 1212a, 1212b and 1212c, an image generator 1214 and a camera module controller 1216.

[0125] The image processing device 1210 may include a plurality of sub-image processors 1212a, 1212b and 1212c, the number of which corresponds to the number of the plurality of camera modules 1100a, 1100b and 1100c.

[0126] Image data generated by camera modules 1100a, 1100b, and 1100c can be provided to corresponding sub-image processors 1212a, 1212b, and 1212c via separate image signal lines ISLa, ISLb, and ISLc, respectively. For example, image data generated by camera module 1100a can be provided to sub-image processor 1212a via image signal line ISLa, image data generated by camera module 1100b can be provided to sub-image processor 1212b via image signal line ISLb, and image data generated by camera module 1100c can be provided to sub-image processor 1212c via image signal line ISLc. This transmission of image data can be performed using, for example, a camera serial interface (CSI) based on a Mobile Industrial Processor Interface (MIPI), but is not limited to this.

[0127] Meanwhile, in some example implementations, a sub-image processor can be arranged to correspond to multiple camera modules. For example, such as Figure 13 As shown, sub-image processors 1212a and 1212c can be integrated into one sub-image processor instead of being separate from each other. This allows image data provided by camera modules 1100a and 1100c to be selected by a selection element (e.g., a multiplexer) and then provided to the integrated sub-image processor.

[0128] Image data provided to each of the sub-image processors 1212a, 1212b, and 1212c can be provided to the image generator 1214. The image generator 1214 can generate an output image based on image generation information or pattern signals using the image data provided by each of the sub-image processors 1212a, 1212b, and 1212c.

[0129] Specifically, the image generator 1214 can generate an output image by merging at least some of the image data generated by camera modules 1100a, 1100b, and 1100c with different fields of view, based on image generation information or a pattern signal. Furthermore, the image generator 1214 can generate an output image by selecting any one of multiple image data generated by camera modules 1100a, 1100b, and 1100c with different fields of view, based on image generation information or a pattern signal.

[0130] In some example implementations, the image generation information may include a zoom signal (or zoom factor). Furthermore, in some example implementations, the mode signal may be, for example, a signal based on a mode selected by the user.

[0131] When the image generation information is a zoom signal (zoom factor) and camera modules 1100a, 1100b, and 1100c have different fields of view, image generator 1214 can perform different operations depending on the type of zoom signal. For example, when the zoom signal is a first signal, image generator 1214 can merge image data output from camera module 1100a and image data output from camera module 1100c, and then generate an output image using the merged image signal and image data output from camera module 1100b that was not used for merging. When the zoom signal is a second signal different from the first signal, image generator 1214 does not perform this image data merging and can select any one of the multiple image data output from camera modules 1100a, 1100b, and 1100c to generate the output image. However, the inventive concept is not limited to this, and the method of processing image data can be modified and implemented as needed.

[0132] In some example implementations, the image generator 1214 may receive multiple image data with different exposure times from at least one of a plurality of sub-image processors 1212a, 1212b and 1212c, and generate merged image data with increased dynamic range by performing high dynamic range (HDR) processing on the multiple image data.

[0133] The camera module controller 1216 can provide control signals to each of the camera modules 1100a, 1100b, and 1100c. The control signals generated by the camera module controller 1216 can be provided to the corresponding camera modules 1100a, 1100b, and 1100c respectively through separate control signal lines CSLa, CSLb, and CSLc.

[0134] Based on mode signals or image generation information including zoom signals, any one of multiple camera modules 1100a, 1100b, and 1100c (e.g., 1100b) can be designated as the master camera module, and the other camera modules (e.g., 1100a and 1100c) can be designated as slave cameras. This information can be included in control signals, which are then provided to the corresponding camera modules 1100a, 1100b, and 1100c respectively via separate control signal lines CSLa, CSLb, and CSLc.

[0135] The camera module that operates as the master module or slave module can be changed based on the zoom factor or operating mode signal. For example, when the field of view of camera module 1100a is wider than that of camera module 1100b, and the zoom factor indicates a low zoom ratio, camera module 1100b can operate as the master module, and camera module 1100a can operate as the slave module. Conversely, when the zoom factor indicates a high zoom ratio, camera module 1100a can operate as the master module, and camera module 1100b can operate as the slave module.

[0136] In some example implementations, the control signals provided from the camera module controller 1216 to each of the camera modules 1100a, 1100b, and 1100c may include a synchronization enable signal. For example, if camera module 1100b is the main camera and camera modules 1100a and 1100c are the slave cameras, the camera module controller 1216 may send a synchronization enable signal to camera module 1100b. Having received the synchronization enable signal, camera module 1100b may generate a synchronization signal based on the received synchronization enable signal and provide the generated synchronization signal to camera modules 1100a and 1100c via the synchronization signal line SSL. Camera modules 1100b, 1100a, and 1100c may synchronize with each other based on the synchronization signal to send image data to the application processor 1200.

[0137] In some example implementations, the control signals provided from the camera module controller 1216 to the plurality of camera modules 1100a, 1100b, and 1100c may include mode information based on a mode signal. Based on the mode information, the plurality of camera modules 1100a, 1100b, and 1100c may operate in a first operating mode and a second operating mode related to the sensing rate.

[0138] In the first operating mode, multiple camera modules 1100a, 1100b and 1100c can generate image signals at a first rate (e.g., generate image signals at a first frame rate), encode image signals at a second rate higher than the first rate (e.g., encode image signals at a second frame rate higher than the first frame rate), and send the encoded image signals to the application processor 1200.

[0139] Application processor 1200 can store the received image signal (i.e., the encoded image signal) in internal memory 1230 provided therein or in external memory 1400 outside of application processor 1200. Then, it can read and decode the encoded image signal from internal memory 1230 or external memory 1400 and display image data generated based on the decoded image signal. For example, a corresponding sub-image processor among the plurality of sub-image processors 1212a, 1212b, and 1212c of image processing apparatus 1210 can perform decoding and can also perform image processing on the decoded image signal.

[0140] In the second operating mode, multiple camera modules 1100a, 1100b, and 1100c can generate image signals at a third rate lower than the first rate (e.g., at a third frame rate lower than the first frame rate) and send the image signals to the application processor 1200. The image signals provided to the application processor 1200 can be unencoded signals. The application processor 1200 can perform image processing on the received image signals or store the image signals in internal memory 1230 or external memory 1400.

[0141] PMIC 1300 can supply power, such as power supply voltage, to each of the multiple camera modules 1100a, 1100b, and 1100c. For example, under the control of application processor 1200, PMIC 1300 can supply a first power to camera module 1100a via power signal line PSLa, a second power to camera module 1100b via power signal line PSLb, and a third power to camera module 1100c via power signal line PSLc.

[0142] In response to a power control signal PCON from the application processor 1200, the PMIC 1300 can generate power corresponding to each of the plurality of camera modules 1100a, 1100b, and 1100c, and adjust the power level. The power control signal PCON can include a power adjustment signal for each operating mode of the plurality of camera modules 1100a, 1100b, and 1100c. For example, the operating mode can include a low-power mode, in which case the power control signal PCON can include information about the camera module operating in the low-power mode and the set power level. The power levels supplied to the plurality of camera modules 1100a, 1100b, and 1100c can be the same or different from each other. Furthermore, the power levels can be changed dynamically.

[0143] Figure 15 This is a block diagram illustrating the configuration of an image sensor according to some example implementations.

[0144] Reference Figure 15 The image sensor 1500 may include a pixel array 1510, a controller 1530, a row driver 1520, and a pixel signal processor 1540.

[0145] Image sensor 1500 may include at least one of the image sensors 100a, 100b, and 100c described above. Pixel array 1510 may include a plurality of unit pixels arranged in a two-dimensional manner, and each unit pixel may include a photoelectric conversion device. The photoelectric conversion device may absorb light to generate photocharge, and the electrical signal (output voltage) based on the generated photocharge may be provided to pixel signal processor 1540 via a vertical signal line.

[0146] The pixel array 1510 includes individual pixels that can provide an output voltage one at a time, row by row. Therefore, individual pixels in a row of the pixel array 1510 can be simultaneously activated by the selection signal output by the row driver 1520. The individual pixels in the selected row can provide an output voltage to the output line of the corresponding column based on the absorbed light.

[0147] The controller 1530 can control the row driver 1520 to cause the pixel array 1510 to absorb light and accumulate photocharge, temporarily store the accumulated photocharge, and output an electrical signal to the outside of the pixel array 1510 according to the stored photocharge. In addition, the controller 1530 can control the pixel signal processor 1540 to measure the output voltage provided by the pixel array 1510.

[0148] The pixel signal processor 1540 may include a correlated dual sampler 1542, an analog-to-digital converter 1544, and a buffer 1546. The correlated dual sampler 1542 can sample and hold the output voltage provided by the pixel array 1510.

[0149] The correlated double sampler 1542 can double sample a specific noise level and a level based on the generated output voltage, and output the level corresponding to the difference between them. Furthermore, the correlated double sampler 1542 can receive a ramp signal generated by the ramp signal generator 1548, compare the ramp signals with each other, and output the comparison result.

[0150] The analog-to-digital converter 1544 can convert an analog signal corresponding to the level received from the correlated dual sampler 1542 into a digital signal. The buffer 1546 can latch the digital signal, and the latched signal can be sequentially output to the outside of the image sensor 1500 and transmitted to the image processor (not shown).

[0151] Figure 16 This is a schematic block diagram illustrating an electronic device including an image sensor according to some example embodiments.

[0152] Reference Figure 16 In the network environment ED00, electronic device ED01 can communicate with electronic device ED02 via a first network ED98 (e.g., a short-range wireless communication network), or with electronic device ED04 and / or server ED08 via a second network ED99 (e.g., a long-range wireless communication network). Electronic device ED01 can communicate with electronic device ED04 via server ED08. Electronic device ED01 may include a processor ED20, a memory ED30, an input device ED50, an audio output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a haptic module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a user identification module ED96, and / or an antenna module ED97. In electronic device ED01, some of these components (e.g., display device ED60) may be omitted, or other components may be added. Some of these components may be implemented as a single integrated circuit. For example, a sensor module ED76 (e.g., a fingerprint sensor, an iris sensor, or an illuminance sensor) can be embedded in the display device ED60 (e.g., a display) to be implemented.

[0153] Processor ED20 can run software (e.g., program ED40) to control one or more other components (e.g., hardware and software components) connected to electronic device ED01 and perform various data processing or calculations. As part of the data processing or calculations, processor ED20 can load commands and / or data received from other components (e.g., sensor module ED76 or communication module ED90) into volatile memory ED32, process the commands and / or data stored in volatile memory ED32, and store the resulting data in non-volatile memory ED34. Processor ED20 may include a main processor ED21 (e.g., a central processing unit or application processor) and an auxiliary processor ED23 (e.g., a graphics processing unit, image signal processor, sensor hub processor, or communication processor) that can operate independently or in conjunction with the main processor ED21. The auxiliary processor ED23 may consume less power than the main processor ED21 and may perform specific functions.

[0154] When the main processor ED21 is inactive (e.g., in sleep mode), the auxiliary processor ED23 can control functions and / or states related to some components of the electronic device ED01 (e.g., display device ED60, sensor module ED76, or communication module ED90) on behalf of the main processor ED21. Alternatively, when the main processor ED21 is active (e.g., in application running mode), the auxiliary processor ED23 can work with the main processor ED21 to control functions and / or states related to some components of the electronic device ED01 (e.g., display device ED60, sensor module ED76, or communication module ED90). The auxiliary processor ED23 (e.g., an image signal processor or a communication processor) can also be implemented as part of other functionally related components (e.g., camera module ED80 or communication module ED90).

[0155] Memory ED30 may store various data required by components of electronic device ED01 (e.g., processor ED20 or sensor module ED76). Data may include, for example, software (such as program ED40), as well as input and / or output data for commands related to the software. Memory ED30 may include volatile memory ED32 and / or non-volatile memory ED34. Non-volatile memory ED32 may include internal memory ED36 fixedly mounted in electronic device ED01 and removable external memory ED38.

[0156] The program ED40 can be stored as software in the memory ED30 and may include the operating system ED42, middleware ED44 and / or application ED46.

[0157] Input device ED50 can receive commands and / or data for components of electronic device ED01 (e.g., processor ED20) from an external source (e.g., a user) to electronic device ED01. Input device ED50 may include a microphone, mouse, keyboard, and / or digital pen (e.g., stylus).

[0158] Audio output device ED55 can output audio signals to the external device ED01. Audio output device ED55 may include a speaker and / or a receiver. The speaker can be used for general purposes such as playing multimedia or recording, and the receiver can be used to receive incoming calls. The receiver can be integrated into the speaker or implemented as a separate, independent device.

[0159] Display device ED60 can visually provide information to the outside of electronic device ED01. Display device ED60 may include a display, holographic device or projector and control circuitry for controlling the device. Display device ED60 may include touch circuitry configured to detect touch, and / or sensor circuitry (e.g., pressure sensor) configured to measure the intensity of the force generated by the touch.

[0160] Audio module ED70 can convert sound into electrical signals and vice versa. Audio module ED70 can obtain sound through input device ED50, or output sound through the speaker and / or headphones of audio output device ED55 and / or another electronic device (e.g., electronic device ED02) directly or wirelessly connected to electronic device ED01.

[0161] Sensor module ED76 can detect the operating status (e.g., power or temperature) or external environmental status (e.g., user status) of electronic device ED01 and generate electrical signals and / or data values ​​corresponding to the detected status. Sensor module ED76 may include gesture sensors, gyroscope sensors, atmospheric pressure sensors, magnetic sensors, accelerometers, grip sensors, proximity sensors, color sensors, IR sensors, biometric sensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0162] Interface ED77 may support one or more specified protocols that can be used to connect electronic device ED01 directly or wirelessly to another electronic device (e.g., electronic device ED02). Interface ED77 may include a High Definition Multimedia Interface (HDMI) port, a Universal Serial Bus (USB) interface, a Secure Digital (SD) card interface, and / or an audio interface.

[0163] The connection end ED78 may include a connector through which electronic device ED01 can be physically connected to another electronic device (e.g., electronic device ED02). The connection end ED78 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (e.g., a headphone connector).

[0164] The haptic module ED79 can convert electrical signals into mechanical stimuli (e.g., vibration or motion) or electrical stimuli that a user can perceive through touch or kinesthesia. The haptic module ED79 may include a motor, a piezoelectric element, and / or an electrical stimulation device.

[0165] The ED80 camera module can capture both still and moving images. The ED80 camera module may include a lens assembly containing one or more lenses. Figure 1The image sensor 100, image signal processor, and / or flash are included. A lens assembly included in the camera module ED80 can collect light emitted from the object whose image will be captured.

[0166] The power management module ED88 manages the power supplied to the electronic device ED01. The power management module ED88 can be implemented as part of a PMIC.

[0167] Battery ED89 can power components of electronic device ED01. Battery ED89 may include non-rechargeable primary batteries, rechargeable rechargeable batteries, and / or fuel cells.

[0168] Communication module ED90 can support the establishment of a direct (wired) communication channel and / or a wireless communication channel between electronic device ED01 and another electronic device (e.g., electronic device ED02, electronic device ED04, or server ED08), and communicate through the established communication channel. Communication module ED90 may include one or more communication processors operating independently of processor ED20 (e.g., application processor), and supports direct and / or wireless communication. Communication module ED90 may include wireless communication module ED92 (e.g., cellular communication module, short-range wireless communication module, or Global Navigation Satellite System (GNSS) communication module) and / or wired communication module ED94 (e.g., local area network (LAN) communication module or power line communication module). The corresponding communication module can communicate with other electronic devices via a first network ED98 (e.g., a short-range communication network such as Bluetooth, Wi-Fi Direct, or Infrared Data Association (IrDA)) or a second network ED99 (e.g., a long-range communication network such as a cellular network, the Internet, or a computer network (e.g., a LAN or wide area network (WAN)). These various types of communication modules can be integrated into a single component (e.g., a single chip) or implemented as multiple separate components (e.g., multiple chips). The wireless communication module ED92 can identify and verify electronic devices ED01 within communication networks such as the first network ED98 and / or the second network ED99 by using user information (e.g., the International Mobile Subscriber Identity (IMSI)) stored in the user identification module ED96.

[0169] Antenna module ED97 can transmit signals and / or power to or from an external source (e.g., another electronic device). The antenna may include a radiator made of conductive patterns on a substrate (e.g., a printed circuit board (PCB)). Antenna module ED97 may include one or more antennas. In cases where antenna module ED97 includes multiple antennas, communication module ED90 can select from the multiple antennas an antenna suitable for a communication scheme used in a communication network such as first network ED98 and / or second network ED99. Signals and / or power can be transmitted or received between communication module ED90 and other electronic devices via the selected antenna. In addition to the antenna, other components (e.g., radio frequency integrated circuits (RFICs)) may be included as part of antenna module ED97.

[0170] Some components can connect to each other and exchange signals (e.g., commands or data) through communication schemes between peripheral devices (e.g., bus, general purpose input / output (GPIO), serial peripheral interface (SPI), or MIPI).

[0171] Commands or data can be sent or received between electronic device ED01 and external electronic device ED04 via server ED08 connected to the second network ED99. Electronic devices ED02 and ED04 may be of the same or different type as electronic device ED01. All or some operations performed by electronic device ED01 can be performed by one or more of electronic devices ED02, ED04, and ED08. For example, when electronic device ED01 needs to perform a certain function or service, it can request one or more other electronic devices to perform part or all of the function or service, instead of performing it itself. The one or more other electronic devices that have received the request can perform additional functions or services related to the request and send the execution result to electronic device ED01. Cloud computing, distributed computing, and / or client-server computing technologies can be used for this purpose.

[0172] Figure 17 It is shown schematically. Figure 16 A block diagram of the camera module.

[0173] Reference Figure 17 The camera module ED80 may include a lens assembly CM10, a flash CM20, and an image sensor 100 (e.g., Figure 1The system includes an image sensor 100, an image stabilizer CM40, a memory CM50 (e.g., a buffer memory), and / or an image signal processor CM60. A lens assembly CM10 can collect light emitted from the object whose image will be captured. A camera module ED80 may include multiple lens assemblies CM10; in this case, the camera module ED80 may be a dual-camera system, a 360-degree camera, or a spherical camera. Some of the multiple lens assemblies CM10 may have the same lens properties (e.g., angle of view, focal length, autofocus, aperture number (F-number), or optical zoom) or may have different lens properties. The lens assembly CM10 may include a wide-angle lens or a telephoto lens.

[0174] The flash CM20 can emit light to enhance light emitted or reflected from an object. The flash CM20 may include one or more light-emitting diodes (e.g., red-green-blue (RGB) light-emitting diodes (LEDs), white LEDs, IR LEDs, or ultraviolet LEDs) and / or a xenon lamp. The image sensor 100 may be as described above. Figure 1 The image sensor described herein can obtain an image corresponding to an object by converting light emitted or reflected from an object and then transmitted through the lens assembly CM10 into an electrical signal. The image sensor 100 may include one or more sensors selected from image sensors with different properties, such as RGB sensors, black-and-white (BW) sensors, IR sensors, or ultraviolet (UV) sensors. Each sensor included in the image sensor 100 may be implemented as a charge-coupled device (CCD) sensor and / or a complementary metal-oxide-semiconductor (CMOS) sensor.

[0175] In response to movement of the camera module ED80 or the electronics ED01 including the camera module ED80, the image stabilizer CM40 may move one or more lenses, including the lens assembly CM10 or the image sensor 100, in a specific direction, or control the operating characteristics of the image sensor 100 (e.g., adjust the readout timing) to compensate for the negative effects of movement. The image stabilizer CM40 may detect movement of the camera module ED80 or the electronics ED01 using a gyroscope sensor (not shown) or an accelerometer sensor (not shown) disposed inside or outside the camera module ED80. The image stabilizer CM40 may also be implemented optically.

[0176] The memory CM50 can store some or all of the image data acquired by the image sensor 100 for the next image processing task. For example, when multiple images are acquired at high speed, the acquired raw data (e.g., Bayer pattern data or high-resolution data) can be stored in the memory CM50, only the low-resolution image can be displayed, and then the raw data of the selected (e.g., user-selected) image can be sent to the image signal processor CM60. The memory CM50 can be integrated into the memory ED30 of the electronic device ED01, or it can be configured as a separate memory that operates independently.

[0177] Image signal processor CM60 can perform image processing on images acquired by image sensor 100 or image data stored in memory CM50. Image processing may include depth map generation, 3D modeling, panorama generation, feature point extraction, image compositing, and / or image compensation (e.g., noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, or softening). Image signal processor CM60 can perform control (exposure time control or readout timing control) of components included in camera module ED80 (e.g., image sensor 100). Images processed by image signal processor CM60 may be stored back in memory CM50 for further processing, or may be provided to external components of camera module ED80 (e.g., memory ED30, display device ED60, electronic device ED02, electronic device ED04, or server ED08). Image signal processor CM60 may be integrated into processor ED20, or may be configured as a separate processor operating independently of processor ED20. When the image signal processor CM60 is configured as a separate processor from the processor ED20, the image processed by the image signal processor CM60 can be displayed by the display device ED60 after undergoing additional image processing by the processor ED20.

[0178] The electronic device ED01 may include multiple camera modules ED80 with different properties or functions. In this case, one of the multiple camera modules ED80 may be a wide-angle camera and another may be a telephoto camera. Similarly, one of the multiple camera modules ED80 may be a front-facing camera and another may be a rear-facing camera.

[0179] As described herein, any device, system, module, part, unit, controller, circuit and / or part thereof, and / or any part thereof (including but not limited to image sensor 100, pixel array 10, column driver 20, row driver 30, timing controller 40, readout circuit 50, image processor 70, image sensor 100a, image sensor 100b, image sensor 100c, electronic device 1000, multiple camera modules 1100a, 1100b and 1100c, prism 1105, optical path folding element OPFE) according to any example implementation. 1110, Actuator 1130, Image Sensing Device 1140, Image Sensor 1142, Control Logic 1144, Memory 1146, Storage Device 1150, Application Processor 1200, Image Processing Device 1210, Multiple Sub-Image Processors 1212a, 1212b and 1212c, Image Generator 1214, Camera Module Controller 1216, Memory Controller 1220, Internal Memory 1230, PMIC 1300, External Memory 1400, Image Sensor 1500, Pixel Array 1510, Line Driver 1520, Controller 1530, Pixel Signal Processor 1540, Ramp Signal Generator 1548, Correlation Double Sampler 1542, ADC 1544, Buffer 1546, Network Environment ED00, Electronic Device ED01, Electronic Device ED02, Electronic Device ED04, Server ED08, Processor ED20, Memory ED30, Input Device ED50, Audio Output Device ED55, Display Device ED60, Audio Module ED70, Sensor Module D76, Interface ED77, Haptic Module ED79, Camera Module ED80, Power Management Module ED88, Battery ED89, Communication Module ED90, User Identification Module ED96, Antenna Module ED97, Program ED40, Lens Assembly CM10, Flash CM20, Image Stabilizer CM40, Memory CM50, Image Signal Processor CM60, and any part thereof may include one or more instances of processing circuitry, may be included in one or more instances of processing circuitry, and / or may be implemented by one or more instances of processing circuitry, such as hardware including logic circuitry; hardware / software combinations, such as a processor executing software; or combinations thereof. For example, the processing circuitry may more specifically include, but is not limited to, a central processing unit (CPU), an arithmetic logic unit (ALU), a graphics processing unit (GPU), an application processor (AP), a digital signal processor (DSP), a microcomputer, a field-programmable gate array (FPGA) and programmable logic units, a microprocessor, an application-specific integrated circuit (ASIC), a neural network processing unit (NPU), an electronic control unit (ECU), an image signal processor (ISP), etc.In some example implementations, the processing circuitry may include: a non-transitory computer-readable storage device (e.g., a memory), such as a solid-state drive (SSD), storing a program of instructions; and a processor (e.g., a CPU) configured to execute the program of instructions to perform functions and / or methods performed by some or all of any means, system, module, section, unit, controller, circuit, and / or portions thereof according to any example implementation.

[0180] The above embodiments are examples, and those skilled in the art can make various modifications and equivalent exemplary embodiments. Therefore, the true scope of protection based on the exemplary embodiments should be determined by the technical spirit described in the appended claims.

[0181] Although the inventive concept has been specifically shown and described with reference to some exemplary embodiments thereof, it will be understood that various changes in form and detail may be made therein without departing from the spirit and scope of the appended claims.

[0182] This application is based on and claims priority to Korean Patent Application No. 10-2024-0108968, filed with the Korean Intellectual Property Office on August 14, 2024, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. An image sensor, comprising: A sensor substrate includes a plurality of first pixels and a plurality of second pixels, wherein the plurality of first pixels are configured to sense light of a first wavelength, and the plurality of second pixels are configured to sense light of a second wavelength different from the first wavelength; A first color filter and a second color filter are located above the sensor substrate, and the first color filter and the second color filter correspond to the plurality of first pixels and the plurality of second pixels, respectively. Transparent spacers on both the first and second color filters; At least one microlens array above the transparent spacer, the at least one microlens array comprising a plurality of nanopillars, the plurality of nanopillars focusing incident light onto the plurality of first pixels and the plurality of second pixels; as well as Multiple anti-reflective layers are applied to the light-incident surface of at least one microlens array. The plurality of upper anti-reflective layers are stacked and overlap each other in a vertical direction, the vertical direction being perpendicular to the upper surface of the sensor substrate, and The refractive index of the plurality of upper antireflective layers increases in the vertical direction toward the at least one microlens array.

2. The image sensor according to claim 1, wherein, The refractive index of the plurality of upper antireflective layers is less than the refractive index of the at least one microlens array and greater than the refractive index of air.

3. The image sensor according to claim 1, wherein, In the vertical direction, for every 100 nm of the thickness of the upper antireflective layer, the refractive index of each of the plurality of upper antireflective layers increases linearly by about 0.

2.

4. The image sensor according to claim 1, wherein At least one of the plurality of upper antireflective layers includes a plurality of holes arranged in a two-dimensional periodic pattern, and The plurality of holes are exposed to the outside of the image sensor.

5. The image sensor according to claim 4, wherein, The cross-sectional area of ​​each of the plurality of holes in the horizontal direction decreases toward the at least one microlens array.

6. The image sensor according to claim 1, wherein The plurality of upper anti-reflective layers includes a first upper anti-reflective layer, a second upper anti-reflective layer, and a third upper anti-reflective layer. Among the plurality of upper anti-reflective layers, the third upper anti-reflective layer is located at the lowest position, and the third upper anti-reflective layer includes a plurality of holes arranged in a two-dimensional periodic pattern. Among the plurality of upper antireflective layers, the second upper antireflective layer is on top of the third upper antireflective layer, and the second upper antireflective layer covers the outer surface of the third upper antireflective layer, and Among the plurality of upper anti-reflective layers, the first upper anti-reflective layer is on top of the second upper anti-reflective layer, and the first upper anti-reflective layer covers the outer surface of the second upper anti-reflective layer.

7. The image sensor according to claim 6, wherein, The cross-sectional area of ​​the third upper anti-reflective layer in the horizontal direction expands toward the at least one microlens array.

8. The image sensor according to claim 6, wherein, The uppermost surface of at least one of the second upper antireflective layer and the first upper antireflective layer is planar.

9. The image sensor according to claim 1, wherein, The thickness of each of the plurality of upper antireflective layers in the vertical direction is between 100 Å and 2000 Å.

10. The image sensor of claim 1, further comprising an etch stop between the transparent spacer and the at least one microlens array.

11. An image sensor, comprising: A sensor substrate includes a plurality of first pixels and a plurality of second pixels, wherein the plurality of first pixels are configured to sense light of a first wavelength, and the plurality of second pixels are configured to sense light of a second wavelength different from the first wavelength; A transparent spacer above the sensor substrate; A first color filter and a second color filter are located between the sensor substrate and the transparent spacer, and the first color filter and the second color filter correspond to the plurality of first pixels and the plurality of second pixels, respectively. A filter fence between the first color filter and the second color filter; A first microlens array above the transparent spacer, the first microlens array comprising a plurality of first nanopillars configured to focus incident light onto a plurality of first pixels and a plurality of second pixels; A second microlens array above the first microlens array, the second microlens array including a plurality of second nanopillars, the plurality of second nanopillars being located at positions in the horizontal direction different from the plurality of first nanopillars in the horizontal direction, such that the plurality of second nanopillars are offset from the plurality of first nanopillars in the horizontal direction, the horizontal direction extending parallel to the upper surface of the sensor substrate; A first etching barrier is located between the transparent spacer and the first microlens array; as well as Multiple anti-reflective layers are applied to the light-incident surface of the second microlens array. The plurality of upper anti-reflective layers are stacked to overlap each other in a vertical direction extending perpendicular to the upper surface of the sensor substrate. The refractive index of the plurality of upper anti-reflective layers increases in the vertical direction toward the second microlens array, and The refractive index of the plurality of upper anti-reflective layers is less than the refractive index of the first microlens array and greater than the refractive index of air.

12. The image sensor according to claim 11, wherein At least one of the plurality of upper anti-reflective layers includes a plurality of holes arranged in a two-dimensional periodic pattern. The plurality of holes are exposed to the outside of the image sensor, and The cross-sectional area of ​​each of the plurality of holes in the horizontal direction decreases toward the second microlens array.

13. The image sensor according to claim 11, wherein The plurality of upper anti-reflective layers includes a first upper anti-reflective layer, a second upper anti-reflective layer, and a third upper anti-reflective layer. Among the plurality of upper anti-reflective layers, the third upper anti-reflective layer is located at the lowest position, and the third upper anti-reflective layer includes a plurality of holes arranged in a two-dimensional periodic pattern. Among the plurality of upper anti-reflective layers, the second upper anti-reflective layer is on top of the third upper anti-reflective layer, and the second upper anti-reflective layer covers the outer surface of the third upper anti-reflective layer. Among the plurality of upper antireflective layers, the first upper antireflective layer is on top of the second upper antireflective layer, and the first upper antireflective layer covers the outer surface of the second upper antireflective layer. The cross-sectional area of ​​the third upper anti-reflective layer in the horizontal direction expands toward the second microlens array.

14. The image sensor according to claim 13, wherein, The refractive index of the second upper antireflective layer is less than that of the third upper antireflective layer and greater than that of the first upper antireflective layer.

15. The image sensor according to claim 11, wherein, The thickness of each of the plurality of upper antireflective layers in the vertical direction is between 100 Å and 2000 Å.

16. The image sensor according to claim 11, wherein, Each of the plurality of upper antireflective layers comprises at least one material selected from Al2O3, HfO, SiO2, AlOC, AlON, AlOCN, Ta2O5, and TiO2, or any combination thereof.

17. The image sensor of claim 11, further comprising a plurality of lower anti-reflective layers on the upper surface of the sensor substrate.

18. The image sensor of claim 11, further comprising a second etch stop between the first microlens array and the second microlens array.

19. An image sensor, comprising: A sensor substrate, the sensor substrate including a plurality of first pixels and a plurality of second pixels, wherein the plurality of first pixels are configured to sense light of a first wavelength, and the plurality of second pixels are configured to sense light of a second wavelength different from the first wavelength; Multiple lower anti-reflective layers on the upper surface of the sensor substrate; Transparent spacers above the plurality of lower antireflective layers; A first color filter and a second color filter are located between the sensor substrate and the transparent spacer, and the first color filter and the second color filter correspond to the plurality of first pixels and the plurality of second pixels, respectively. A first microlens array above the transparent spacer, the first microlens array comprising a plurality of first nanopillars configured to focus incident light onto a plurality of first pixels and a plurality of second pixels; A second microlens array above the first microlens array, the second microlens array including a plurality of second nanopillars, the plurality of second nanopillars being located at positions in the horizontal direction different from the plurality of first nanopillars in the horizontal direction, such that the plurality of second nanopillars are offset from the plurality of first nanopillars in the horizontal direction, the horizontal direction extending parallel to the upper surface of the sensor substrate; A first etch barrier between the transparent spacer and the first microlens array; as well as Multiple anti-reflective layers are applied to the light-incident surface of the second microlens array. The plurality of upper anti-reflective layers are stacked to overlap each other in a vertical direction extending perpendicular to the upper surface of the sensor substrate. The refractive index of the plurality of upper anti-reflective layers increases in the vertical direction toward the second microlens array, and Each of the first microlens array and the second microlens array is configured as follows: The phase of the light of the first wavelength is changed, and then the light of the first wavelength is focused onto each of the plurality of first pixels, and The phase of the light of the second wavelength is changed, and then the light of the second wavelength is focused onto each of the plurality of second pixels.

20. The image sensor of claim 19, wherein In the vertical direction, for every 100 nm of the thickness of the upper antireflective layer, the refractive index of each of the plurality of upper antireflective layers increases linearly by approximately 0.2, and The thickness of each of the plurality of upper antireflective layers is between 100 Å and 2000 Å.

Images