Image sensor and method of manufacturing same

Abstract

The invention relates to an image sensor and a method of manufacturing the same. The image sensor includes: a substrate having a first surface and a second surface opposite to the first surface and including pixel regions spaced apart from each other; a light-transmitting layer covering the second surface and including an anti-reflection portion having an opening; a light shielding portion disposed in the light transmitting layer, filling the opening and covering a portion of a first pixel region of the pixel regions; the grating is arranged on the light transmitting layer; a color filter filling the opening of the grille; and a microlens disposed on the color filter.

Description

Technical Field

[0001] This application relates to an image sensor and a method for manufacturing the image sensor. Background Technology

[0002] An image sensor is a semiconductor device that converts optical images into electrical signals. Recently, with the development of the computer and communications industries, the demand for image sensors with improved performance has increased in various fields such as digital cameras, camcorders, personal communication systems (PCS), gaming devices, security cameras, and medical miniature cameras. Image sensors can be classified into charge-coupled device (CCD) type and complementary metal-oxide-semiconductor (CMOS) type. CMOS image sensors have multiple pixels arranged in a two-dimensional pattern. Each pixel includes a photodiode (PD). The photodiode is used to convert incident light into an electrical signal. Summary of the Invention

[0003] This application aims to provide an image sensor and a method for manufacturing the image sensor, the image sensor including a light-blocking pattern inserted in a light-transmitting film.

[0004] This application relates to an image sensor, the image sensor comprising: a substrate having a first surface and a second surface opposite to the first surface and including pixel regions spaced apart from each other; a light-transmitting layer covering the second surface and including an anti-reflective portion having an opening; a light-shielding portion disposed in the light-transmitting layer, filling the opening and covering a portion of the first pixel region of the pixel region; a grid disposed on the light-transmitting layer; a color filter filling the opening of the grid; and a microlens disposed on the color filter.

[0005] The first pixel area covered by the light-blocking portion may include at least one autofocus pixel.

[0006] Each pixel region may include a pair of sub-pixel regions spaced apart from each other and a pair of photodiodes disposed in the pair of sub-pixel regions, and the light-shielding portion may cover one of the sub-pixel regions in the pair of sub-pixel regions.

[0007] The image sensor may further include a single photodiode disposed in each of the pixel regions, wherein the light-shielding portion may cover a portion of the single photodiode in the first pixel region.

[0008] The light-transmitting layer may further include a surface insulating film, which is disposed between the second surface and the light-shielding portion and between the second surface and the anti-reflective portion.

[0009] The light-transmitting layer may further include a covering film that covers the light-shielding portion and the anti-reflective portion.

[0010] The light-transmitting layer may be located above the second surface. The light-shielding portion may be positioned at the same height as the light-transmitting layer. The light-shielding portion may be located above the portion of the first pixel region. The grid may be located above the light-transmitting layer. The microlens may be located above the color filter.

[0011] The light-shielding portion may have a lower portion protruding below the bottom surface of the anti-reflective portion, and the light-transmitting layer further includes a surface insulating film disposed between the anti-reflective portion and the second surface, and the surface insulating film at least surrounds the side surface of the lower portion of the light-shielding portion.

[0012] The light-transmitting layer may further include a covering film disposed on the anti-reflective portion, the light-shielding portion may have an upper portion protruding above the top surface of the anti-reflective portion, and the side surface of the upper portion of the light-shielding portion may be surrounded by the covering film.

[0013] The thickness of the light-shielding portion may differ from the thickness of the anti-reflective portion.

[0014] The light-shielding portion may be made of a material that reflects, blocks, and / or absorbs light.

[0015] The light-shielding part may be made of at least one of aluminum, titanium, titanium nitride, tungsten, tantalum, tantalum nitride, aluminum oxide, tantalum oxide, copper, molybdenum, nickel, red organic material, green organic material, blue organic material, cyan organic material, magenta organic material, yellow organic material, black organic material, or gray organic material.

[0016] The anti-reflective component may include one or more of the following: silicon or hafnium oxides; silicon or hafnium nitrides; a film for reducing reflection; or a material with low reflectivity.

[0017] The light-transmitting layer allows more than 90% of the incident light to be transmitted.

[0018] The image sensor may further include: a transfer gate disposed on the first surface of the substrate and in each pixel region; and a floating diffusion region disposed on one side of the transfer gate and adjacent to the first surface in each pixel region.

[0019] This application relates to an image sensor, the image sensor comprising: a substrate having a first surface and a second surface opposite to the first surface; a first deep element isolation pattern disposed in the substrate to correspond to pixel regions, each pixel region including a pair of sub-pixel regions; a second deep element isolation pattern disposed between respective pairs of sub-pixel regions; an anti-reflective portion covering the second surface and having an opening; a light-shielding portion filling the opening; a grid disposed on the anti-reflective portion; a color filter filling the opening of the grid; and a microlens disposed on the color filter, wherein at least a first pixel region of the pixel region is part of an autofocus pixel, and the light-shielding portion covers at least a portion of one of the pairs of sub-pixel regions of the first pixel region.

[0020] The image sensor may further include a surface insulating film disposed between the second surface and the light-shielding portion and between the second surface and the anti-reflective portion.

[0021] The image sensor may further include a cover film covering the light-shielding portion and the anti-reflective portion, wherein the grid may be disposed on the cover film.

[0022] The thickness of the light-shielding portion may differ from the thickness of the anti-reflective portion.

[0023] The light-shielding portion may be made of a material that reflects, blocks, and / or absorbs light.

[0024] This application relates to a method for manufacturing an image sensor, the method comprising: forming a surface insulating film on a surface of a substrate; forming an anti-reflective film on the surface insulating film; etching the anti-reflective film to form an opening in the anti-reflective film; forming a light-shielding portion in the opening; forming a cover film on the light-shielding portion and the anti-reflective film; and forming a grid and a color filter on the cover film.

[0025] The formation of the light-shielding portion may include: forming a light-shielding film that fills the opening on the anti-reflective film; and planarizing the light-shielding film to form the light-shielding portion, wherein, when the light-shielding film is planarized, the light-shielding film may be over-etched such that the top surface of the light-shielding portion is lower than the top surface of the anti-reflective film.

[0026] The formation of the light-shielding portion may include: forming a light-shielding film on the anti-reflective film to fill the opening; planarizing the light-shielding film until the anti-reflective film is exposed to form the light-shielding portion; and etching the exposed anti-reflective film, wherein the top surface of the etched anti-reflective film may be lower than the top surface of the light-shielding portion. Attached Figure Description

[0027] Figure 1 This is a block diagram of an image sensor according to an embodiment of this application.

[0028] Figure 2 This is a circuit diagram of the pixel array of the image sensor of this application.

[0029] Figure 3A and Figure 3B This is a circuit diagram of a pixel group of an image sensor according to some embodiments of this application.

[0030] Figure 4 This is a cross-sectional view of an image sensor according to an embodiment of this application.

[0031] Figure 5 yes Figure 4 An enlarged cross-sectional view of part "A".

[0032] Figure 6 and Figure 7 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to some embodiments of this application.

[0033] Figures 8 to 10 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to some embodiments of this application.

[0034] Figures 11 to 13 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to some embodiments of this application.

[0035] Figure 14 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to an embodiment of this application.

[0036] Figures 15 to 19 This is a cross-sectional view illustrating a method for manufacturing an image sensor according to an embodiment of this application.

[0037] Figure 20 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to an embodiment of this application.

[0038] Figure 21 This is a cross-sectional view of an image sensor according to an embodiment of this application.

[0039] Figure 22 This is a cross-sectional view of an image sensor according to an embodiment of this application. Detailed Implementation

[0040] In the following, embodiments of this application will be described in detail with reference to the accompanying drawings.

[0041] Throughout this specification, when a component is described as "comprising" a particular element or group of elements, it will be understood that, unless the context otherwise indicates, the component is formed solely by that element or group of elements, or that the element or group of elements may be combined with additional elements to form the component. On the other hand, the term "composed of" indicates that a component is formed solely by the listed elements.

[0042] Ordinal numbers such as "first," "second," and "third" can simply be used as labels to distinguish certain elements, steps, etc., from one another. Terms not described using "first," "second," etc., in the specification may still be referred to as "first" or "second" in the claims. Furthermore, a term referenced with a specific ordinal number (e.g., "first" in a particular claim) may be described elsewhere with a different ordinal number (e.g., "second" in the specification or another claim).

[0043] For ease of description, spatial relative terms such as “below,” “under,” “down,” “above,” “top,” “bottom,” etc., are used herein to describe the relationship between one element or feature and another shown in the figures. It will be understood that, in addition to the orientation depicted in the figures, the spatial relative terms are also intended to cover different orientations of the device in use or operation. For example, if the device in the figure is flipped, an element described as “below” or “under” other elements or features will subsequently be oriented “above” other elements or features. Thus, the term “below” can encompass both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein can be interpreted accordingly.

[0044] As can be seen, for example in the accompanying figures, items described herein in singular form may be provided in plural form. Therefore, unless the context otherwise indicates, a description of a single item provided in plural form should be understood to apply to the remaining multiple items.

[0045] Figure 1 This is a block diagram of an image sensor according to an embodiment of this application.

[0046] refer to Figure 1 The image sensor according to some embodiments of this application may include a pixel array 1, a row decoder 2, a row driver 3, a column decoder 4, a timing generator 5, a correlated double sampler (CDS) 6, an analog-to-digital converter (ADC) 7, and an input / output buffer (I / O buffer) 8.

[0047] Pixel array 1 may include a plurality of pixels arranged in a two-dimensional manner, and the pixels may convert optical signals into electrical signals. A pixel or unit pixel herein may refer to a sensor element of the disclosed image sensor (e.g., a single-pixel sensor), and / or may refer to the smallest addressable light-sensing element of the image sensor. In some cases, as described herein, pixels may be included as part of a pixel array or pixel group, and / or included within a pixel region. In some cases, as described herein, a pixel may include one or more sub-pixels, and is therefore not limited to a single unit pixel. Pixel array 1 may be driven by a plurality of drive signals (e.g., pixel selection signals, reset signals, and / or charge transfer signals) transmitted from row driver 3. The converted electrical signals may be provided to the associated dual sampler 6.

[0048] The row driver 3 can provide multiple drive signals to the pixel array 1 based on the decoding result from the row decoder 2 to drive multiple pixels. When the pixels are arranged in a matrix, the drive signals can be provided on a row-by-row basis.

[0049] The timing generator 5 can provide timing signals and control signals to the row decoder 2 and the column decoder 4.

[0050] The correlated double sampler 6 can receive electrical signals generated from the pixel array 1, and can hold and sample the received signals. The correlated double sampler 6 can double sample a specific noise level and a signal level caused by the electrical signal to output a difference level corresponding to the difference between the noise level and the signal level.

[0051] The analog-to-digital converter 7 can convert the analog signal corresponding to the difference level output from the correlated dual sampler 6 into a digital signal, and can output the digital signal.

[0052] The input / output buffer 8 can latch digital signals and sequentially output the latched signals to the image signal processor (not shown) based on the decoding results from the column decoder 4.

[0053] Figure 2 This is a circuit diagram of the pixels included in the pixel array of an image sensor according to an embodiment of this application.

[0054] refer to Figure 2The pixel array may include multiple pixels PXL, and the pixels PXL may be arranged in a matrix. Each pixel PXL may include a transfer transistor TX and logic transistors RX, SX, and SFX. The logic transistors RX, SX, and SFX may include a reset transistor RX, a select transistor SX, and a source follower transistor SFX. In addition, each pixel PXL may include a photodiode PD and a floating diffusion region FD.

[0055] A photodiode (PD) can generate and accumulate photocharge proportional to the amount of light incident from the outside. A PD can include a photoelectric conversion element, a phototransistor, a grating, a pinned photodiode, or a combination thereof. A transfer transistor (TX) can transfer the photocharge generated from the PD to a floating diffusion region (FD). The transfer gate of the transfer transistor (TX) can be connected to a transfer gate line (TGL). The floating diffusion region (FD) can receive and accumulate the photocharge generated from the PD.

[0056] The gate of the source follower transistor SFX can be connected to the floating diffusion region FD. The drain terminal of the source follower transistor SFX can be connected to the power supply terminal VDD, which can receive the power supply voltage. The source follower transistor SFX can be controlled according to the amount of photocharge accumulated in the floating diffusion region FD.

[0057] The reset transistor RX periodically resets the charge accumulated in the floating diffusion region FD. The gate of the reset transistor RX can be connected to the reset gate line RGL. The source terminal of the reset transistor RX can be connected to the floating diffusion region FD, and the drain terminal of the reset transistor RX can be connected to the power supply terminal VDD. When the reset transistor RX is turned on, the power supply voltage at the power supply terminal VDD can be applied to the floating diffusion region FD through the reset transistor RX. For example, when the reset transistor RX is turned on, the charge accumulated in the floating diffusion region FD can be discharged by the power supply voltage, thereby resetting the floating diffusion region FD.

[0058] A source follower transistor (SFX) can be used as a source follower buffer amplifier. The SFX amplifies the potential changes in the floating diffusion region (FD) and outputs the amplified potential changes to the output line VOUT.

[0059] The gate of the select transistor SX can be connected to the select gate line SGL. The drain terminal of the select transistor SX can be connected to the source terminal of the source follower transistor SFX, and the source terminal of the select transistor SX can be connected to the output line VOUT. The select transistor SX of the pixel PXL, read out row by row, can be selected by a select signal applied through the corresponding select gate line SGL. When the select transistor SX is turned on, the potential change amplified by the source follower transistor SFX can be output to the output line VOUT through the select transistor SX.

[0060] like Figure 2 As shown, each pixel PXL may include a photodiode PD, a transfer transistor TX, and each logic transistor RX, SX, and SFX, but embodiments of this application are not limited thereto. In some embodiments, some adjacent pixels may be configured as pixel groups, and the pixels in a pixel group may share at least one of the logic transistors RX, SX, and SFX. (Refer to...) Figure 3A and Figure 3B Describe an example related to this.

[0061] Figure 3A and Figure 3B This is a circuit diagram of a pixel group of an image sensor according to some embodiments of this application. Unlike individual pixels (e.g., in...) Figure 2 In these examples, pixels in a pixel group can share the previously disclosed reset transistor RX, source follower transistor SFX, and select transistor SX.

[0062] refer to Figure 3A and Figure 3B A pixel array can include pixel groups PXLG, and each pixel group PXLG can include multiple pixels. Figure 3A and Figure 3B Each of these shows a circuit diagram of a single pixel group PXLG.

[0063] refer to Figure 3AIn one embodiment, the pixel group PXLG may include four pixels (e.g., a first pixel to a fourth pixel). The first pixel may include a first transfer transistor TX1 and a first photodiode PD1, the second pixel may include a second transfer transistor TX2 and a second photodiode PD2, the third pixel may include a third transfer transistor TX3 and a third photodiode PD3, and the fourth pixel may include a fourth transfer transistor TX4 and a fourth photodiode PD4. The gates of the first transfer transistor TX1 to the fourth transfer transistor TX4 may be connected to the first transfer gate line TGL1 to the fourth transfer gate line TGL4, respectively. In one embodiment, the first pixel to the fourth pixel of the pixel group PXLG may share the previously disclosed reset transistor RX, source follower transistor SFX, and select transistor SX.

[0064] refer to Figure 3B In one embodiment, the pixel group PXLG may include four pixels, and each of the four pixels may include two sub-pixels. Therefore, in this example, the pixel group PXLG may include first sub-pixels to eighth sub-pixels. The first to eighth sub-pixels may each include first transfer transistors TX1 to eighth transfer transistors TX8 and first photodiodes PD1 to eighth photodiodes PD8. The gates of the first to eighth transfer transistors TX1 to TX8 may be connected to first transfer gate lines TGL1 to eighth transfer gate lines TGL8, respectively. In one embodiment, the first to eighth sub-pixels may share the previously disclosed reset transistor RX, source follower transistor SFX, and select transistor SX.

[0065] exist Figure 3A and Figure 3B In some embodiments, the pixel group PXLG may comprise four pixels or eight sub-pixels. However, the embodiments of this application are not limited thereto, and the number of pixels and / or sub-pixels in the pixel group PXLG may vary.

[0066] Figure 4 This is a cross-sectional view of an image sensor according to an embodiment of this application. Figure 5 yes Figure 4 An enlarged cross-sectional view of part "A".

[0067] refer to Figure 4An image sensor according to one embodiment may include a photoelectric conversion structure (also referred to herein as a photoelectric conversion array or photoelectric converter) 100. The photoelectric conversion structure 100 may include a first substrate 110, a photodiode 120, a first deep element isolation pattern DTI1, a second deep element isolation pattern DTI2, a first shallow element isolation pattern STI1, a floating diffusion region FD, a transfer gate TG, a first gate insulating film 130, a grid 140, a light-transmitting film 150, a light-shielding pattern 160, a color filter CF, and a microlens ML.

[0068] The first substrate 110 may have a first surface 111 and a second surface 113 opposite to the first surface 111. The first surface 111 may be the front surface of the first substrate 110, and the second surface 113 may be the rear surface of the first substrate 110. Light may be incident on the second surface 113 of the first substrate 110. For example, the second surface 113 of the first substrate 110 may be a light incident surface.

[0069] The first substrate 110 may be a silicon (Si) substrate, a germanium (Ge) substrate, a silicon-germanium (Si-Ge) substrate, a group II-VI compound semiconductor substrate, a group III-V compound semiconductor substrate, or a silicon-on-insulator (SOI) substrate. The first substrate 110 may include impurities of a first conductivity type, and therefore, the first substrate 110 may have a first conductivity type. For example, the impurities of the first conductivity type may be group III elements. For example, the impurities of the first conductivity type may include p-type impurities such as aluminum (Al), boron (B), indium (In), and / or gallium (Ga).

[0070] A photodiode 120 may be disposed in the first substrate 110. The photodiode 120 may include impurities having a second conductivity type different from the first conductivity type, and therefore, the photodiode 120 may have a second conductivity type. For example, the impurities of the second conductivity type may be group V elements. For example, the impurities of the second conductivity type may include N-type impurities such as phosphorus, arsenic, bismuth, and / or antimony.

[0071] The first substrate 110 and the photodiode 120 can be configured to form a PN junction with each other to form the aforementioned photodiode PD.

[0072] In one embodiment, a first deep element isolation pattern (DTI1) may be disposed in a first substrate 110 to define a pixel region in the first substrate 110, and at least one photodiode 120 may be disposed in each pixel region.

[0073] The first deep element isolation pattern (DTI1) can pass through the first substrate 110. For example, the first deep element isolation pattern (DTI1) can pass through the first surface 111 and the second surface 113 of the first substrate 110 and the body of the substrate between the first surface 111 and the second surface 113 of the first substrate 110.

[0074] A first deep element isolation pattern (DTI1) can be formed in the first substrate 110 to surround each pixel region from a planar perspective. For example, the first deep element isolation pattern (DTI1) can be formed using a technique of filling deep trenches with an insulating material (e.g., by deep trench isolation (DTI) technology), the deep trenches being formed by patterning in the first substrate 110. In one embodiment, the pixel region can be the portion of the first substrate 110 surrounded by the first deep element isolation pattern (DTI1).

[0075] In one embodiment, the first deep element isolation pattern (DTI1) may include a conductive isolation film disposed in a deep trench and an insulating pad disposed between the first substrate 110 and the conductive isolation film. The conductive isolation film may include a conductive material, such as a doped semiconductor material (e.g., doped polysilicon). The conductive isolation film may be spaced apart from the first substrate 110 by the insulating pad, such that the conductive isolation film can be electrically isolated from the first substrate 110 when the image sensor is operating.

[0076] In one embodiment, each pixel region may include a pair of sub-pixel regions. In this case, a photodiode 120 may be disposed in each of the pair of sub-pixel regions. For example, the pair of photodiodes 120 may be disposed separately in the pair of sub-pixel regions. When each pixel region includes a pair of sub-pixel regions, each pixel region may correspond to... Figure 3B One of the pixels in the pixel group PXLG, which consists of two sub-pixels. For example, Figure 3B Each subpixel of a pixel in a pixel group PXLG can be formed on and within each pixel region.

[0077] Pairs of subpixel regions can be separated by at least one of various isolation techniques. For example, pairs of subpixel regions can be separated from each other by a doped isolation technique. For example, a doped isolation region can be provided between pairs of subpixel regions. Alternatively, pairs of subpixel regions can be separated from each other by a doped isolation region and at least one deep element isolation pattern. For example, a doped isolation region and at least one deep element isolation pattern can be provided between pairs of subpixel regions. Alternatively, only at least one deep element isolation pattern can be provided between pairs of subpixel regions (e.g., no doped isolation region).

[0078] In one embodiment, each pixel region may include a pair of sub-pixel regions, and a second deep element isolation pattern DTI2 may be disposed between the pairs of sub-pixel regions.

[0079] The above embodiments disclose that each pixel region includes paired sub-pixel regions, but the embodiments of this application are not limited thereto. In one embodiment, each pixel region may not include sub-pixel regions. In this case, Figure 2 Each pixel PXL in can be formed in Figure 4 On each pixel region and within each pixel region. For example, only one photodiode 120 can be formed in each pixel region. In one embodiment, pixels formed in four adjacent pixel regions can share the aforementioned logic transistors RX, SFX, and SX. In this case, Figure 3A A pixel group PXLG can be formed on four adjacent pixel regions and in four adjacent pixel regions. In the following text, for ease of illustration, pixel regions including paired sub-pixel regions will be described as examples.

[0080] A first shallow element isolation pattern STI1 may be disposed in the first substrate 110 to define an active region. The first shallow element isolation pattern STI1 may be adjacent to a first surface 111 of the first substrate 110. The first shallow element isolation pattern STI1 may be disposed between active regions to electrically isolate the active regions from each other. In one embodiment, the first shallow element isolation pattern STI1 may define at least one active region in each sub-pixel region. When a pixel region does not include a sub-pixel region, the first shallow element isolation pattern STI1 may define at least one active region in each pixel region.

[0081] In one embodiment, the first deep element isolation pattern DTI1 may partially overlap with the first shallow element isolation pattern STI1. For example, the first deep element isolation pattern DTI1 may extend through a portion of the first shallow element isolation pattern STI1. The overlapping portion of the first deep element isolation pattern DTI1 and the first shallow element isolation pattern STI1 may correspond to a portion of the first shallow element isolation pattern STI1 or a portion of the first deep element isolation pattern DTI1.

[0082] A transfer gate TG can be disposed on a first surface 111 of the first substrate 110. The transfer gate TG can be disposed on a corresponding active region (hereinafter referred to as the first active region) of each sub-pixel region. A first gate insulating film 130 can be disposed between the transfer gate TG and the first active region.

[0083] The floating diffusion region FD can be disposed in the first active region located on the side of the transfer gate TG. In one embodiment, the floating diffusion region FD can be a region doped with impurities having a second conductivity type.

[0084] In one embodiment, a gate spacer (not shown) may be disposed on a side surface of the transfer gate TG. The gate spacer may include an insulating material different from the insulating material of the first shallow element isolation pattern STI1. For example, when the first shallow element isolation pattern STI1 comprises silicon oxide, the gate spacer may include silicon nitride and / or silicon oxynitride.

[0085] In one embodiment, a cover liner film (not shown) may be disposed on a first surface 111 of the first substrate 110 to conformally cover the first surface 111, the first gate insulating film 130, the gate spacer, and the transfer gate TG.

[0086] A light-transmitting film 150 (also referred to as a light-transmitting layer 150) may be disposed on the second surface 113 of the first substrate 110. The light-transmitting film 150 may cover the second surface 113 of the first substrate 110 and the top surfaces of the first deep element isolation pattern DTI1 and the second deep element isolation pattern DTI2. The light-transmitting film 150 may include a transparent insulating material. For example, the light-transmitting film 150 may allow more than 80%, more than 90%, or more than 95% of incident light to pass through.

[0087] In one embodiment, the light-transmitting film 150 may function as a film that prevents light reflection (e.g., by including an anti-reflective film 151) and / or as a film with a fixed charge. For example, when the light-transmitting film 150 is used as a film that prevents light reflection, the light-transmitting film 150 can prevent light reflection so that light incident on the second surface 113 of the first substrate 110 can smoothly reach the photodiode 120, thereby improving the efficiency of the disclosed photoelectric conversion structure 100 in capturing and converting light. Alternatively, for example, when the light-transmitting film 150 is used as a film with a fixed charge, the light-transmitting film 150 may have a negative fixed charge. Additionally, for example, the light-transmitting film 150 may include both a film with a fixed charge and a film that prevents light reflection, stacked sequentially.

[0088] In one embodiment, the light-transmitting film 150 may have a single-layer or multi-layer structure. For example, the light-transmitting film 150 may include at least one of an anti-reflective film 151, a surface insulating film 153, or a cover film 155. However, the structure of the light-transmitting film 150 is not limited thereto, and in some embodiments, the light-transmitting film 150 may include other layers in addition to the disclosed anti-reflective film 151, surface insulating film 153, and cover film 155.

[0089] refer to Figure 5According to one embodiment, the light-transmitting film 150 may include an anti-reflective film 151, a surface insulating film 153, and a cover film 155. A portion of the anti-reflective film 151 may have an opening, such as a recess or a hole, extending through it to define an opening region, which may be a recessed region RR, and thus, the anti-reflective film 151 may include a recessed region RR. Although shown as a hole completely extending through the anti-reflective film 151, the opening region marked as a recessed region RR in the figures may be a recess that does not completely extend through the anti-reflective film 151, and the recessed region RR is described as an example in the embodiments discussed herein. Multiple holes or multiple recesses may form an opening pattern, for example, the opening pattern including multiple openings (e.g., multiple recesses or multiple holes).

[0090] An antireflective film 151 (also referred to as an antireflective portion 151) may be disposed on a second surface 113 of the first substrate 110, and a surface insulating film 153 may be disposed between the antireflective film 151 and the second surface 113 of the first substrate 110. A cover film 155 may cover the top surface of the antireflective film 151 and the top surface of the light-shielding pattern 160. In one embodiment, the antireflective film 151 may prevent light reflection, thereby improving efficiency in capturing and converting light. The antireflective film 151 may reduce reflection (e.g., by having a tuned refractive index, tuned thickness, or textured surface), and / or the antireflective film 151 may include one or more materials having low reflectivity. In one embodiment, the antireflective film 151 may include an oxide or nitride comprising at least one of silicon or hafnium. For example, the antireflective film 151 may include at least one of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a hafnium oxide film, or a hafnium nitride film. In one embodiment, the light-shielding pattern 160 may be disposed in the antireflective film 151.

[0091] A light-shielding pattern 160 (also referred to as a light-shielding portion 160) may be formed in the light-transmitting film 150. According to one embodiment, the light-shielding pattern 160 may fill a recessed region RR of the anti-reflective film 151. In one embodiment, the light-shielding pattern 160 may have at least one of the functions of absorbing light, reflecting light, or blocking light. In one embodiment, the light-shielding pattern 160 may be disposed on a specific pixel region within a pixel region. For example, the light-shielding pattern 160 may be selectively disposed on a pixel region including an autofocus pixel (hereinafter referred to as the autofocus pixel region). For example, the light-shielding pattern 160 may cover at least a portion of one of the paired sub-pixel regions of the autofocus pixel region. For example, the light-shielding pattern 160 may perpendicularly overlap with at least a portion of one of the paired sub-pixel regions of the autofocus pixel region.

[0092] The light-shielding pattern 160 can be configured to reduce the amount of light (e.g., by absorbing, reflecting, and / or blocking light). In various examples, the light-shielding pattern 160 can absorb, reflect, and / or block more than 50%, more than 80%, more than 90%, or more than 95% of the incident light. In one embodiment, the light-shielding pattern 160 may include a metallic material, a metal nitride, a low-refractive-index material, or an organic material. For example, the light-shielding pattern 160 may include at least one of aluminum, titanium, titanium nitride, tungsten, tantalum, tantalum nitride, aluminum oxide, tantalum oxide, copper, molybdenum, nickel, red organic material, green organic material, blue organic material, cyan organic material, magenta organic material, yellow organic material, black organic material, or gray organic material.

[0093] In one embodiment, when the light-shielding pattern 160 includes an organic material, the light-shielding pattern 160 may be formed of an organic material that absorbs light passing through the color filter CF. For example, when the color filter CF allows red wavelength light to pass through, the light-shielding pattern 160 may include at least one of a green organic material, a blue organic material, a cyan organic material, a black organic material, or a gray organic material. Similarly, when the color filter CF allows blue wavelength light to pass through, the light-shielding pattern 160 may include at least one of a green organic material, a red organic material, a yellow organic material, a black organic material, or a gray organic material. Additionally, when the color filter CF allows green wavelength light to pass through, the light-shielding pattern 160 may include at least one of a blue organic material, a red organic material, a magenta organic material, a black organic material, or a gray organic material.

[0094] In one embodiment, such as Figure 5 As disclosed, the recessed region RR can penetrate the antireflective film 151, and the light-shielding pattern 160 can contact the surface insulating film 153 and the cover film 155. However, embodiments of this application are not limited thereto. In one embodiment, the light-shielding pattern 160 can be spaced apart from the surface insulating film 153 and contact the cover film 155. In another embodiment, the light-shielding pattern 160 can contact the surface insulating film 153 and be spaced apart from the cover film 155. In yet another embodiment, the light-shielding pattern 160 can be spaced apart from both the surface insulating film 153 and the cover film 155.

[0095] In one embodiment, the surface insulating film 153 may have at least one of the functions of a film preventing light reflection, a film having a negative fixed charge, or a film preventing etching. In one embodiment, the surface insulating film 153 may include a metal oxide or a metal fluoride, wherein the metal oxide or metal fluoride comprises at least one of aluminum, hafnium, zirconium, lanthanum, titanium, tantalum, or yttrium. For example, the surface insulating film 153 may include at least one of an aluminum oxide film, a hafnium oxide film, a zirconium oxide film, a lanthanum oxide film, a hafnium silicon oxide film, a hafnium aluminum oxide film, a titanium oxide film, or a tantalum oxide film.

[0096] As described above, the cover film 155 can be disposed on the anti-reflective film 151 to cover the anti-reflective film 151 and the light-shielding pattern 160. For example, the surface insulating film 153, the anti-reflective film 151, and the light-shielding pattern 160 can be disposed between the second surface 113 of the first substrate 110 and the cover film 155. In one embodiment, the cover film 155 can have at least one of the functions of a film that prevents light reflection or a film that prevents etching. For example, the cover film 155 can include at least one of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a hafnium oxide film, a zirconium oxide film, a lanthanum oxide film, a hafnium silicon oxide film, a hafnium aluminum oxide film, a titanium oxide film, or a tantalum oxide film.

[0097] A grid 140 may be disposed on the second surface 113 of the first substrate 110, and a light-transmitting film 150 may be located between the grid 140 and the second surface 113 of the first substrate 110. For example, the grid 140 may be disposed on the light-transmitting film 150. The grid 140 may define an opening. A color filter array comprising two-dimensionally arranged color filters CF may be disposed on the second surface 113 of the first substrate 110. The color filter array may be disposed on the light-transmitting film 150, and each color filter CF may fill a corresponding opening in the opening of the grid 140. A lens array comprising two-dimensionally arranged microlenses ML may be disposed on the second surface 113 of the first substrate 110, and the color filter array may be located between the lens array and the second surface 113 of the first substrate 110. For example, the color filter array may be disposed between the lens array and the light-transmitting film 150.

[0098] In one embodiment, each color filter CF can cover a corresponding pixel region within a pixel region. For example, from a planar perspective, each color filter CF can be positioned above four pixel regions arranged in a 2×2 matrix. In this example, each color filter CF can cover pairs of adjacent pixel regions. However, embodiments of this application are not limited to this. For example, from a planar perspective, each color filter CF can be positioned above nine pixel regions arranged in a 3×3 matrix, or above sixteen pixel regions arranged in a 4×4 matrix.

[0099] In one embodiment, a color filter CF may include a first color filter having a first color, a second color filter having a second color, and a third color filter having a third color. For example, each color filter CF may have any one of red, green, or blue. Alternatively, each color filter CF may have any one of cyan, magenta, or yellow. In addition to the previously disclosed red, green, blue, cyan, magenta, or yellow, the color filter CF may also have other colors.

[0100] The grating 140 can guide incident light into the photodiode 120. The grating 140 can have a single-layer or multi-layer structure. The grating 140 may include a metallic material (e.g., titanium, tungsten, aluminum, tantalum, etc.), a metal nitride (e.g., titanium nitride, tantalum nitride, etc.), and / or a low-refractive-index material. A low-refractive-index material can refer to a material with a refractive index lower than that of silicon (Si). In one embodiment, the low-refractive-index material may include a metal oxide, or a polymer and silicon dioxide nanoparticles located within the polymer. For example, the low-refractive-index material may include at least one of silicon oxide, aluminum oxide, tantalum oxide, or silicon oxynitride. In one embodiment, the low-refractive-index material may have insulating properties.

[0101] In one embodiment, the grating 140 may overlap at least perpendicularly to the first deep element isolation pattern DTI1. In another embodiment, although not shown, the grating 140 may also overlap perpendicularly to the second deep element isolation pattern DTI2. However, embodiments of this application are not limited thereto. In one embodiment, when the grating 140 is laterally shifted, at least a portion of the grating 140 may not overlap perpendicularly to the first deep element isolation pattern DTI1 and the second deep element isolation pattern DTI2. For example, the grating 140 may have a structure laterally offset from the first deep element isolation pattern DTI1 and the second deep element isolation pattern DTI2. The offset structure may be intentionally chosen to optimize the optical path, taking into account manufacturing process margins and / or the angle of travel of incident light, etc.

[0102] A microlens ML can be disposed on the light-transmitting film 150, and a color filter CF is located between the microlens ML and the light-transmitting film 150. At least a portion of the microlens ML can overlap perpendicularly with the photodiode 120. The microlens ML can focus light incident toward the first substrate 110. In one embodiment, the microlens ML can comprise an organic material such as a polymer. For example, the microlens ML can comprise a light-transmitting resin, a photoresist material, or a thermosetting resin.

[0103] In one embodiment, the microlens ML may include a lens pattern and a planarization portion. The planarization portion may be disposed on the color filter CF, and the lens pattern may be disposed on the planarization portion. The lens pattern may include the same material as the planarization portion. The lens pattern and the planarization portion may form a single unit without a boundary surface between them. In one embodiment, the planarization portion may be omitted, and the lens pattern may be directly disposed on the color filter CF.

[0104] In one embodiment, each microlens ML can cover a pixel region. For example, each microlens ML can be perpendicularly overlapped with a corresponding pixel region within the pixel region. Thus, each microlens ML can cover the paired sub-pixel regions included in the corresponding pixel region. Each microlens ML can be perpendicularly overlapped with a pair of photodiodes 120 formed in the paired sub-pixel regions. In one embodiment, each microlens ML in the lens array can be perpendicularly overlapped with a corresponding pixel region within the pixel region. Each microlens ML can be provided to focus incident light and can include a spherical lens, an aspherical lens, or a combination thereof. For example, each microlens ML can have a convex shape when viewed from a cross-sectional perspective.

[0105] As described above, paired sub-pixels can be formed in the paired sub-pixel regions of the pixel region covered by each microlens ML and on the paired sub-pixel regions. For example, paired sub-pixels can be covered by the same color filter CF. In one embodiment, paired sub-pixels can perform not only photoelectric conversion functions that convert light signals into electrical signals, but also autofocus functions. For example, paired sub-pixels can detect the phase difference of light incident through their corresponding microlens ML, and can use the detected phase difference data to perform autofocus functions.

[0106] According to the image sensor in the above embodiment, the recessed region RR can be formed in the light-transmitting film 150 or the anti-reflective film 151, and the light-shielding pattern 160 can fill the recessed region RR. In this case, the light-shielding pattern 160 can be selectively disposed on the autofocus pixel region within the pixel region to cover at least a portion of one of the paired sub-pixel regions in the autofocus pixel region. Therefore, the light-shielding pattern 160 that absorbs or blocks light can be selectively provided in the autofocus pixel (AF pixel), and the configuration of absorbing or blocking light can be minimized in the non-autofocus pixel (non-AF pixel). For example, the amount of light incident on the autofocus pixel can be partially limited to facilitate detection of the phase difference of the incident light for autofocus. Meanwhile, on the non-autofocus (e.g., standard) pixel, the light-shielding pattern 160 may not be provided, and / or the light-transmitting film 150 or the anti-reflective film 151 may be provided. Therefore, the amount of light incident on the non-autofocus pixel can be increased, and the loss of light incident on the non-autofocus pixel can be minimized. As a result, the quantum efficiency (QE) of the image sensor can be improved.

[0107] In some examples, external light can interfere with the function of autofocus pixels (AF pixels), while additional incident light can improve the efficiency and / or performance of non-autofocus pixels (non-AF pixels). For example, excessive incident light may make it difficult for AF pixels to accurately detect the phase difference of light. Therefore, as described above, it is possible to selectively set the light-shielding pattern 160 in AF pixels and to minimize the configuration of absorbing or blocking light in non-AF pixels.

[0108] Figure 6 and Figure 7 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to some embodiments of this application. In the following description, for ease of explanation, the differences from the embodiments described above will be primarily described.

[0109] refer to Figure 6 and Figure 7 A light-shielding pattern 160 and an anti-reflective film 151 may be disposed on a surface insulating film 153, and a cover film 155 may be disposed on the anti-reflective film 151 and the light-shielding pattern 160. In one embodiment, the thickness of the light-shielding pattern 160 may be different from the thickness of the anti-reflective film 151. According to one embodiment, the thickness of the light-shielding pattern 160 and the thickness of the anti-reflective film 151 can be adjusted by changing the selectivity during the planarization process of the light-shielding pattern 160 and the anti-reflective film 151, and the thickness of the light-shielding pattern 160 and / or the thickness of the anti-reflective film 151 can be appropriately adjusted as needed and is therefore unrestricted.

[0110] exist Figure 6 In some embodiments, the thickness of the light-shielding pattern 160 can be greater than the thickness of the anti-reflective film 151. For example, the thickness of the anti-reflective film 151 can be less than the thickness of the light-shielding pattern 160. In this case, a cover film 155 can be formed after the light-shielding pattern 160 is formed. Therefore, a portion of the cover film 155 can have a step, and the horizontal height (e.g., the height in the vertical dimension) of the top surface of the cover film 155 on the light-shielding pattern 160 can be higher than the horizontal height of the top surface of the cover film 155 on the anti-reflective film 151. Therefore, as Figure 6 As shown, a portion of the covering membrane 155 may have steps, but this disclosure is not limited thereto.

[0111] exist Figure 7In some embodiments, the thickness of the light-shielding pattern 160 can be less than the thickness of the anti-reflective film 151. For example, the thickness of the anti-reflective film 151 can be greater than the thickness of the light-shielding pattern 160. In this case, a cover film 155 can be formed after the light-shielding pattern 160 is formed. Therefore, a portion of the cover film 155 can have a step, and the horizontal height of the top surface of the cover film 155 on the light-shielding pattern 160 can be lower than the horizontal height of the top surface of the cover film 155 on the anti-reflective film 151. Therefore, as Figure 7 As shown, a portion of the covering membrane 155 may have steps, but this disclosure is not limited thereto.

[0112] Figures 8 to 10 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to some embodiments of this application.

[0113] refer to Figure 8 The recessed region RR can extend into the interior of the surface insulating film 153. For example, the recessed region RR can pass through at least a portion of the antireflective film 151 and the surface insulating film 153, and the antireflective film 151 and the surface insulating film 153 can include the recessed region RR. Therefore, the light-shielding pattern 160 can be disposed within the antireflective film 151 and the surface insulating film 153. In one embodiment, the recessed region RR can also pass through the surface insulating film 153. Therefore, the lower portion of the light-shielding pattern 160 filling the recessed region RR can protrude below the bottom surface of the antireflective film 151, the surface insulating film 153 can surround the side surface of the lower portion of the light-shielding pattern 160, and the bottom surface of the light-shielding pattern 160 can be substantially coplanar with the bottom surface of the surface insulating film 153.

[0114] Figure 8 The light-shielding pattern 160 is shown in contact with the second surface 113 of the first substrate 110 and the cover film 155, but is not limited thereto. In some embodiments, the light-shielding pattern 160 may contact one of the second surface 113 of the first substrate 110 and the cover film 155, and may be spaced apart from the other. In one embodiment, the light-shielding pattern 160 may be spaced apart from the second surface 113 of the first substrate 110 and the cover film 155.

[0115] refer to Figure 9The recessed region RR can extend into the interior of the cover film 155. For example, the recessed region RR can penetrate both the antireflective film 151 and the cover film 155, and the light-shielding pattern 160 can fill the recessed region RR. Therefore, the light-shielding pattern 160 can be disposed within the antireflective film 151 and the cover film 155. The upper portion of the light-shielding pattern 160 can protrude above the top surface of the antireflective film 151, the cover film 155 can surround the side surface of the upper portion of the light-shielding pattern 160, and the top surface of the light-shielding pattern 160 can be substantially coplanar with the top surface of the cover film 155.

[0116] Figure 9 The light-shielding pattern 160 is shown in contact with the grid 140, the color filter CF, and the surface insulating film 153, but is not limited thereto. In some embodiments, the light-shielding pattern 160 may contact one of the color filter CF and the surface insulating film 153, and may be spaced apart from the other. In one embodiment, the light-shielding pattern 160 may be spaced apart from the grid 140, the color filter CF, and the surface insulating film 153.

[0117] refer to Figure 10 The recessed region RR can extend into the interior of the surface insulating film 153 and the cover film 155. For example, the recessed region RR can penetrate at least a portion of the cover film 155, the anti-reflective film 151, and the surface insulating film 153. Therefore, the light-shielding pattern 160 can be disposed within the anti-reflective film 151, the surface insulating film 153, and the cover film 155. In this case, the lower part of the light-shielding pattern 160 can be like... Figure 8 The lower part of the light-shielding pattern 160 protrudes below the bottom surface of the anti-reflective film 151, and the upper part of the light-shielding pattern 160 can be like... Figure 9 The light-shielding pattern 160 protrudes above the top surface of the anti-reflective film 151.

[0118] Figure 10 The light-shielding pattern 160 is shown in contact with the grid 140, the color filter CF, and the second surface 113 of the first substrate 110, but is not limited thereto. In some embodiments, the light-shielding pattern 160 may contact one of the color filter CF and the second surface 113 and be spaced apart from the other. In one embodiment, the light-shielding pattern 160 may be spaced apart from the grid 140, the color filter CF, and the second surface 113.

[0119] Figures 11 to 13 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to some embodiments of this application.

[0120] refer to Figures 11 to 13The position and / or width of the light-shielding pattern 160 can be appropriately changed as needed. As described above, the position of the light-shielding pattern 160 can be changed when the grille 140 is laterally shifted along the path of the incident light. For example, the horizontal position of the light-shielding pattern 160 can be changed proportionally to the distance by which the grille 140 is laterally shifted from the first deep element isolation pattern DTI1.

[0121] Figure 5 The light-shielding pattern 160 can cover one sub-pixel region of a pair of sub-pixel regions and a first deep element isolation pattern DTI1 and a second deep element isolation pattern DTI2 located on both sides of one of the sub-pixel regions, while Figure 11 The shifted light-shielding pattern 160 may not overlap perpendicularly with the first deep element isolation pattern DTI1, but may overlap perpendicularly with one sub-pixel region in a pair of sub-pixel regions and a portion of the other sub-pixel region in the pair of sub-pixel regions.

[0122] Figure 12 The shifted light-blocking pattern 160 may cover one of the paired sub-pixel regions, but may not cover the other sub-pixel region in the paired sub-pixel region. Figure 12 The horizontal width of the light-blocking pattern is 160, which can be larger than Figure 11 The light-blocking pattern is 160mm wide and narrow. Figure 13 The shifted light-shielding pattern 160 can cover at least a portion of the first deep element isolation pattern DTI1, as well as a portion of one sub-pixel region and a portion of the other sub-pixel region in the paired sub-pixel regions. Figure 13 The width of the light-blocking pattern is 160, which can be greater than Figure 11 The width of the light-shielding pattern 160 is wide. As a result, the horizontal position of the light-shielding pattern 160 can be changed according to the displacement of the grille 140, and the width of the light-shielding pattern 160 can be adjusted appropriately as needed.

[0123] Figure 14 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to an embodiment of this application.

[0124] Figure 14 The adjacent autofocus pixel regions are shown. (Reference) Figure 14In this embodiment, a photodiode 120 can be disposed in each pixel region. For example, unlike the embodiments described above, the pixel region may not include paired sub-pixel regions and a second deep element isolation pattern located between the paired sub-pixel regions. Here, the light-shielding pattern 160 can cover a portion of at least one pixel region. For example, the light-shielding pattern 160 can cover a portion of the autofocus pixel region. As described above, a photodiode 120 can be disposed in the autofocus pixel region, and the light-shielding pattern 160 can cover a portion of the photodiode 120 in the autofocus pixel region. The light-shielding pattern 160 can be... Figures 5 to 13 One of the 160 light-blocking patterns.

[0125] The autofocus pixel region can be divided into a left and a right portion relative to a virtual center line CL that passes through the center of the photodiode 120 and is perpendicular to the second surface 113. In one embodiment, such as Figure 14 As shown, the light-shielding pattern 160 can cover the left portion of the autofocus pixel region. However, embodiments of this application are not limited thereto. In one embodiment, the light-shielding pattern 160 can also cover the right portion of the autofocus pixel region. In some embodiments, the pixel region may include a plurality of autofocus pixel regions, and one light-shielding pattern 160 can cover the left portion of at least one of the autofocus pixel regions, while another light-shielding pattern 160 can cover the right portion of at least another autofocus pixel region.

[0126] Figures 15 to 19 This is a cross-sectional view illustrating a method for manufacturing an image sensor according to an embodiment of this application. Figures 15 to 19 Is with Figure 4 The enlarged cross-sectional view corresponding to part "A".

[0127] refer to Figure 15A first substrate 110 having a first surface 111 and a second surface 113 can be provided, and a first deep element isolation pattern (DTI1) and a second deep element isolation pattern (DTI2) can be formed in the first substrate 110. The first deep element isolation pattern (DTI1) can define a pixel region, and the second deep element isolation pattern (DTI2) can be formed between pairs of sub-pixel regions of the pixel region. A photodiode 120 can be formed in each sub-pixel region using an ion implantation process. In some embodiments, the photodiode 120 can be formed before or after the formation of the first deep element isolation pattern (DTI1) and the second deep element isolation pattern (DTI2). Subsequently, various components (e.g., transfer gate (TG), floating diffusion region (FD), interlayer insulating film, wiring) can be formed on the second surface 113 of the first substrate 110. Subsequently, the first substrate 110 can be coupled to another substrate, and then the second surface 113 of the first substrate 110 can be planarized. In one embodiment, a surface insulating film 153 can be formed on the planarized second surface 113 of the first substrate 110, and an anti-reflective film 151 can be formed on the surface insulating film 153.

[0128] refer to Figure 16 A mask pattern (not shown) can be formed on the antireflective film 151. The mask pattern may have an opening defining a recessed region RR. The opening may expose a portion of the antireflective film 151. The mask pattern can be used as an etching mask to etch the antireflective film 151 to form the recessed region RR in the antireflective film 151.

[0129] In one embodiment, an etching process for forming the recessed region RR may be performed until the surface insulating film 153 is exposed. In this case, the exposed surface of the surface insulating film 153 may correspond to the bottom surface of the recessed region RR. In one embodiment, the horizontal height (e.g., height in the vertical dimension) of the bottom surface of the recessed region RR may be substantially the same as the horizontal height of the top surface of the surface insulating film 153 or the bottom surface of the antireflective film 151. However, embodiments of this application are not limited thereto. In some embodiments, when the etching process stops before the surface insulating film 153 is exposed or includes over-etching, the horizontal height of the bottom surface of the recessed region RR may differ from the horizontal height of the top surface of the surface insulating film 153 or the bottom surface of the antireflective film 151.

[0130] The mask pattern can be removed after the recessed region RR is formed. As previously disclosed, the horizontal height of the bottom surface of the recessed region RR can be substantially the same as the horizontal height of the top surface of the surface insulating film 153 or the bottom surface of the antireflective film 151.

[0131] refer to Figure 17A light-shielding film 161 can be formed on the anti-reflective film 151 having a recessed region RR. The light-shielding film 161 can fill the recessed region RR. For example, the light-shielding film 161 can be formed using a deposition process. In one embodiment, the light-shielding film 161 may include a metallic material, a metal nitride, a low-refractive-index material, or an organic material. For example, the light-shielding film 161 may be made of at least one of aluminum, titanium, titanium nitride, tungsten, tantalum, tantalum nitride, aluminum oxide, tantalum oxide, copper, molybdenum, nickel, red organic material, green organic material, blue organic material, cyan organic material, magenta organic material, yellow organic material, black organic material, and gray organic material.

[0132] refer to Figure 18 A planarization process can be performed on the light-shielding film 161 to form a light-shielding pattern 160.

[0133] In one embodiment, the top surface of the light-shielding pattern 160 may be substantially coplanar with the top surface of the anti-reflective film 151. In this case, a planarization process can be performed until the anti-reflective film 151 is exposed. Therefore, it is possible to manufacture... Figure 5 The image sensor shown.

[0134] Alternatively, or as an alternative, the process can be appropriately modified to manufacture... Figures 6 to 14 The image sensor shown in any of the embodiments described herein. For example, in one embodiment, the thickness of the light-shielding pattern 160 may be formed to be greater than the thickness of the anti-reflective film 151. In this case, a planarization process may be performed until the anti-reflective film 151 is exposed, and an additional etching process may be performed on the exposed anti-reflective film 151. Thus, the top surface of the etched anti-reflective film 151 may be lower than the top surface of the light-shielding pattern 160, and can be fabricated Figure 6 The image sensor shown.

[0135] In one embodiment, the thickness of the light-shielding pattern 160 can be formed to be less than the thickness of the anti-reflective film 151. In this case, the planarization process can include an etching process of the light-shielding film 161 after the anti-reflective film 151 has been exposed. Therefore, the top surface of the light-shielding pattern 160 can be lower than the top surface of the anti-reflective film 151, and can be manufactured... Figure 7 The image sensor shown.

[0136] refer to Figure 19 A cover film 155 can be formed on the anti-reflective film 151 and the light-shielding pattern 160. Subsequently, a [further details can be added] on the cover film 155. Figure 5 The grid 140, color filter CF, and microlens ML.

[0137] In one embodiment, Figures 8 to 10The image sensor can be manufactured by varying the patterning process used to form the recessed region RR in various ways (e.g., a process for forming a mask pattern and an etching process that uses the mask pattern as an etching mask). In one embodiment, in reference Figure 16 During the described etching process, the anti-reflective film 151 and the surface insulating film 153 can be etched. Therefore, it is possible to manufacture... Figure 8 An image sensor. In one embodiment, the patterning process for forming the recessed region RR can be performed after the formation of the cover film 155, and the cover film 155 and the anti-reflective film 151 can be etched by the etching process of the patterning process. Therefore, it is possible to manufacture... Figure 9 An image sensor. In one embodiment, a patterning process can be performed after the cover film 155 is formed, and the cover film 155, the anti-reflective film 151, and the surface insulating film 153 can be etched by an etching process of the patterning process. Therefore, it is possible to manufacture... Figure 10 Image sensor.

[0138] Figure 20 As with Figure 4 The enlarged cross-sectional view corresponding to part "A" shows an image sensor according to an embodiment of this application.

[0139] refer to Figure 20 The light-blocking pattern 160 can be formed on the autofocus pixel PXL, but not necessarily on the ordinary pixel PXL. The light-blocking pattern 160 can absorb or block some light incident through the microlens ML to reduce the amount of light incident on certain areas. As mentioned above, external light can interfere with the function of the autofocus pixel, such as detecting the phase difference of light, while additional incident light can improve the efficiency and / or performance of the non-autofocus pixel. Therefore, the autofocus pixel PXL can detect the phase difference of the incident light and can use the detected phase difference data to perform the autofocus function. As a result, since the light-blocking pattern 160 is not formed on the ordinary pixel PXL, the amount of light loss incident on the ordinary pixel PXL can be minimized. Therefore, the quantum efficiency (QE) of the image sensor can be increased.

[0140] Figure 21 This is a cross-sectional view of an image sensor according to an embodiment of this application.

[0141] refer to Figure 21 An image sensor according to one embodiment may include a first structure 100 and a second structure 200. The first structure 100 may be stacked on the second structure 200. That is, the image sensor according to one embodiment may have a stacked structure. The first structure 100 may also be referred to herein as a photoelectric conversion structure (e.g., the first structure 100 may be...). Figure 4The first structure 100 and the second structure 200 may be referred to as a proximity circuit structure and may include, for example, circuitry for processing pixel data into an image. The first structure 100 and the second structure 200 may be joined to each other by at least one of a variety of joining methods and electrically connected to each other by at least one of a variety of connection methods.

[0142] The first structure 100 may include an optical control layer 20, a photoelectric conversion layer 10, and a first wiring layer 30a. The photoelectric conversion layer 10 may be disposed between the optical control layer 20 and the first wiring layer 30a.

[0143] The light control layer 20 may include Figure 5 The photoelectric conversion layer 10 may include a microlens ML, a color filter CF, a grid 140, a light-transmitting film 150, and a light-shielding pattern 160. Figure 4 The first substrate 110, photodiode 120, first deep element isolation pattern DTI1, second deep element isolation pattern DTI2, first shallow element isolation pattern STI1, floating diffusion region FD, first gate insulating film 130, and transfer gate TG. The first wiring layer 30a may include a first interlayer insulating film 170, a first contact plug 180, a first wiring 190, and a first bonding pad 410.

[0144] A first interlayer insulating film 170 may be disposed on a first surface 111 of a first substrate 110. The first interlayer insulating film 170 may cover the first surface 111, the floating diffusion region FD, and the transfer gate. For example, each first interlayer insulating film 170 may include at least one of silicon oxide, silicon oxynitride, and silicon nitride. In one embodiment, the first interlayer insulating films 170 may be sequentially stacked on the first surface 111 of the first substrate 110. A first contact plug 180 and a first wiring 190 may be disposed in the first interlayer insulating film 170.

[0145] The first bonding pad 410 can be disposed in the first interlayer insulating film 175, which is the lowest layer of the first interlayer insulating film 170.

[0146] The second structure 200 may include a nearby circuit layer 40 and a second wiring layer 30b.

[0147] The nearby circuit layer 40 may include a second substrate 210, a second shallow element isolation pattern STI2, a second gate insulating film 230, and a nearby circuit gate MxG, and the second wiring layer 30b may include a second interlayer insulating film 270, a second contact plug 280, a second wiring 290, and a second bonding pad 420.

[0148] The second substrate 210 may have a third surface 211 and a fourth surface 213 opposite to the third surface 211. The third surface 211 may be the front surface of the second substrate 210, and the fourth surface 213 may be the rear surface of the second substrate 210. The second shallow element isolation pattern STI2 may be disposed in a shallow trench of a specific depth recessed from the third surface 211 of the second substrate 210.

[0149] The second shallow element isolation pattern STI2 can define an active region in the second substrate 210. The second shallow element isolation pattern STI2 can be adjacent to the third surface 211 of the second substrate 210.

[0150] The nearby circuit gate MxG can be disposed on the corresponding active region of the second substrate 210. In one embodiment, the nearby circuit gate MxG can be disposed on the third surface 211 of the second substrate 210. The second gate insulating film 230 can be disposed between the nearby circuit gate MxG and the corresponding active region. The nearby circuit source / drain regions can be disposed in the corresponding active regions located on both sides of each of the nearby circuit gates MxG.

[0151] The second interlayer insulating film 270 can be disposed on the third surface 211 of the second substrate 210 to cover the third surface 211, the second gate insulating film 230, and the nearby circuit gate MxG. The second interlayer insulating film 270 can be sequentially stacked on the third surface 211 of the second substrate 210. The second contact plug 280 and the second wiring 290 can be disposed in the second interlayer insulating film 270. The second bonding pad 420 can be disposed in the second interlayer insulating film 275, which is the uppermost layer of the second interlayer insulating film 270.

[0152] First bonding pad 410 and second bonding pad 420 can electrically connect the first structure 100 and the second structure 200. In one embodiment, the first bonding pad 410 and the second bonding pad 420 can be bonded to each other to electrically connect the first structure 100 to the second structure 200. In one embodiment, the first bonding pad 410 and the second bonding pad 420 can include copper. The first bonding pad 410 and the second bonding pad 420 can be bonded to each other using copper-copper bonding technology. The bonded bonding pads 410 and 420 can form a single body with no boundary surface between them. In one embodiment, the bottommost first interlayer insulating film 175 can be covalently bonded to the topmost second interlayer insulating film 275.

[0153] Figure 22 This is a cross-sectional view of an image sensor having multiple structures according to an embodiment of this application.

[0154] refer to Figure 22An image sensor according to one embodiment may include a first structure 100, a second structure 200, and a third structure 300. The first structure 100 may be stacked on the third structure 300, and the third structure 300 may be stacked on the second structure 200. For example, the third structure 300 may be disposed between the first structure 100 and the second structure 200. The third structure 300 may also be referred to as an intermediate structure. The first structure 100 and the third structure 300 may be joined to each other by at least one of various joining methods and electrically connected to each other by at least one of various connection methods, and the second structure 200 and the third structure 300 may be joined to each other by at least one of various joining methods and electrically connected to each other by at least one of various connection methods.

[0155] The third structure 300 may include an intermediate layer 50, a third wiring layer 30c, and a fourth wiring layer 30d. The intermediate layer 50 may be disposed between the third wiring layer 30c and the fourth wiring layer 30d.

[0156] The intermediate layer 50 may include a third substrate 310, a third shallow element isolation pattern STI3, a third gate insulating film 330, and a gate. The third wiring layer 30c may include at least one of the third interlayer insulating films 370, a third contact plug 380, a third wiring 390, and a third bonding pad 430. The fourth wiring layer 30d may include at least another of the third interlayer insulating films 370 and a fourth bonding pad 440.

[0157] The third substrate 310 may have a fifth surface 311 and a sixth surface 313 opposite to the fifth surface 311. The fifth surface 311 may be the front surface of the third substrate 310, and the sixth surface 313 may be the rear surface of the third substrate 310. Conversely, the fifth surface 311 may be the rear surface of the third substrate 310, and the sixth surface 313 may be the front surface of the third substrate 310.

[0158] The third shallow element isolation pattern STI3 can be disposed in a shallow trench of a specific depth recessed from the fifth surface 311 of the third substrate 310. The third shallow element isolation pattern STI3 can define an active region in the third substrate 310. In one embodiment, the third shallow element isolation pattern STI3 can be adjacent to the fifth surface 311 of the third substrate 310.

[0159] Gates (e.g., reset gate, select gate, source follower gate SFG, etc.) may be disposed on corresponding active regions of the third substrate 310. In one embodiment, the reset gate, select gate, and source follower gate SFG may be disposed on the fifth surface 311 of the third substrate 310. A third gate insulating film 330 may be disposed between each of the reset gate, select gate, and source follower gate SFG and a corresponding active region. Source / drain regions may be disposed in corresponding active regions located on either side of each gate.

[0160] At least one of the third interlayer insulating films 370 may be disposed on the fifth surface 311 of the third substrate 310 to cover the fifth surface 311, the third gate insulating film 330, the reset gate, the select gate, and the source follower gate SFG. In one embodiment, a plurality of third interlayer insulating films 370 may be sequentially stacked on the fifth surface 311 of the third substrate 310. At least another of the third interlayer insulating films 370 may be disposed on the sixth surface 313 of the third substrate 310 (e.g., below). For example, a third interlayer insulating film 377 may be disposed on the sixth surface 313 of the third substrate 310 (e.g., below). A third contact plug 380 and a third wiring 390 may be disposed within the third interlayer insulating film 370.

[0161] The third bonding pad 430 can be disposed in the third interlayer insulating film 375, which is the uppermost layer of the third interlayer insulating film 370, and the fourth bonding pad 440 can be disposed in the third interlayer insulating film 377, which is the lowermost layer of the third interlayer insulating film 370.

[0162] First bonding pads to fourth bonding pads 410, 420, 430, and 440 can electrically connect first structures to third structures 100, 200, and 300. In one embodiment, first bonding pad 410 and third bonding pad 430 can be bonded to each other to electrically connect first structure 100 to third structure 300. In one embodiment, second bonding pad 420 and fourth bonding pad 440 can be bonded to each other to electrically connect second structure 200 to third structure 300.

[0163] In one embodiment, the third structure 300 may be different from... Figure 22 The bonding pads shown can be, for example, vertically reversed (e.g., reflected), vertically and horizontally reversed (e.g., reflected), rotated 180°, etc. For example, the first bonding pad 410 and the fourth bonding pad 440 can be bonded to each other to electrically connect the first structure 100 to the third structure 300. For example, the second bonding pad 420 and the third bonding pad 430 can be bonded to each other to electrically connect the second structure 200 to the third structure 300.

[0164] In one embodiment, the third bonding pad 430 and the fourth bonding pad 440 may comprise copper, as may the first bonding pad 410 and the second bonding pad 420. The bonding pads among the first to fourth bonding pads 410, 420, 430 and 440 may be bonded to each other using copper-copper bonding technology. For example, the bonding pads may form a single body with no boundary surfaces between them.

[0165] In one embodiment, the bonding films among the first to third interlayer insulating films 170, 270, and 370 can be bonded to each other by forming covalent bonds. For example, the first interlayer insulating film 175, which is the lowest layer of the first interlayer insulating film 170, can be bonded to the third interlayer insulating film 375, which is the highest layer of the third interlayer insulating film 370. For example, the second interlayer insulating film 275, which is the highest layer of the second interlayer insulating film 270, can be bonded to the third interlayer insulating film 377, which is the lowest layer of the third interlayer insulating film 370.

[0166] In one embodiment, when the third structure 300 is vertically reversed (e.g., reflected) and coupled (not shown, e.g., inverted, inverted left-right, rotated 180°, etc.), the first interlayer insulating film 175, which is the lowest layer of the first interlayer insulating film 170, can be bonded to the third interlayer insulating film 377, which is the highest layer of the third interlayer insulating film 370, and the second interlayer insulating film 275, which is the highest layer of the second interlayer insulating film 270, can be bonded to the third interlayer insulating film 375, which is the lowest layer of the third interlayer insulating film 370.

[0167] According to one embodiment of this application, quantum efficiency (QE) can be increased by selectively forming light-shielding patterns.

[0168] Although this application has been described above with reference to exemplary embodiments thereof, it will be understood by those skilled in the art or of ordinary skill that this application may be modified and altered in various ways without departing from the spirit and technical scope of this application as described in the appended claims. For example, it will be understood that the above embodiments may be combined in various forms to achieve a degree of compatibility with each other.

[0169] Therefore, the technical scope of this application should not be limited to the detailed description in the specification, but should be determined by the patent claims.

Claims

1. An image sensor, the image sensor comprising: A substrate having a first surface and a second surface opposite to the first surface, and including pixel regions spaced apart from each other; A light-transmitting layer that covers the second surface and includes an anti-reflective portion with an opening; A light-shielding portion is disposed in the light-transmitting layer, fills the opening, and covers a portion of the first pixel region of the pixel region; A grille is disposed on the light-transmitting layer; A color filter that fills the opening of the grid; and A microlens is disposed on the color filter.

2. The image sensor according to claim 1, wherein, The first pixel area covered by the light-blocking portion includes at least one autofocus pixel.

3. The image sensor according to claim 1, wherein: Each pixel region includes: Paired sub-pixel regions, wherein the paired sub-pixel regions are spaced apart from each other, and Pairs of photodiodes, wherein the pairs of photodiodes are respectively disposed in the paired sub-pixel regions; and The light-blocking portion covers one of the paired sub-pixel regions.

4. The image sensor according to claim 1, further comprising: A single photodiode, wherein the single photodiode is disposed in each pixel region. in, The light-shielding portion covers a portion of the single photodiode in the first pixel region.

5. The image sensor according to claim 1, wherein, The light-transmitting layer further includes a surface insulating film, which is disposed between the second surface and the light-shielding portion, and between the second surface and the anti-reflective portion.

6. The image sensor according to claim 5, wherein, The light-transmitting layer further includes a covering film that covers the light-shielding portion and the anti-reflective portion.

7. The image sensor according to claim 1, wherein: The light-transmitting layer is located above the second surface; The light-blocking portion is set at the same height as the light-transmitting layer; The light-blocking portion is located above the portion of the first pixel region; The grille is located above the light-transmitting layer; and The microlens is located above the color filter.

8. The image sensor according to claim 7, wherein, The light-shielding portion has a lower part that protrudes below the bottom surface of the anti-reflective portion. The light-transmitting layer further includes a surface insulating film, which is disposed between the anti-reflective portion and the second surface. The surface insulating film at least surrounds the side surface of the lower part of the light-shielding portion.

9. The image sensor according to claim 7, wherein, The light-transmitting layer also includes a cover film disposed on the anti-reflective portion. The light-shielding portion has an upper part that protrudes above the top surface of the anti-reflective portion, and The upper side surface of the light-shielding portion is surrounded by the covering film.

10. The image sensor according to claim 1, wherein, The thickness of the light-shielding portion is different from the thickness of the anti-reflective portion.

11. The image sensor according to claim 1, wherein, The light-shielding portion is made of a material that reflects, blocks, and / or absorbs light.

12. The image sensor according to claim 11, wherein, The light-shielding part is made of at least one of the following: aluminum, titanium, titanium nitride, tungsten, tantalum, tantalum nitride, aluminum oxide, tantalum oxide, copper, molybdenum, nickel, red organic material, green organic material, blue organic material, cyan organic material, magenta organic material, yellow organic material, black organic material, or gray organic material.

13. The image sensor according to claim 1, further comprising: A transfer gate is disposed on the first surface of the substrate and on each pixel region; and A floating diffusion region is disposed in each pixel region on one side of the transfer gate and adjacent to the first surface.

14. An image sensor, the image sensor comprising: A substrate having a first surface and a second surface opposite to the first surface; A first deep element isolation pattern is disposed in the substrate to correspond to a pixel region, each pixel region including a pair of sub-pixel regions; The second deep element isolation pattern is disposed between each pair of sub-pixel regions; An anti-reflective portion, the anti-reflective portion covering the second surface and having an opening; A light-shielding portion, wherein the light-shielding portion fills the opening; A grille is disposed on the anti-reflective portion; A color filter that fills the opening of the grid; and Microlenses, the microlenses being disposed on the color filter, in, At least the first pixel region of the pixel region is part of the autofocus pixel, and The light-blocking portion covers at least a portion of one of the paired sub-pixel regions of the first pixel region.

15. The image sensor according to claim 14, further comprising: A surface insulating film is disposed between the second surface and the light-shielding portion, and between the second surface and the anti-reflective portion.

16. The image sensor according to claim 14, further comprising: A covering film that covers the light-shielding portion and the anti-reflective portion. in, The grille is disposed on the covering film.

17. The image sensor according to claim 14, wherein, The thickness of the light-shielding portion is different from the thickness of the anti-reflective portion.

18. A method for manufacturing an image sensor, the method comprising: A surface insulating film is formed on one surface of the substrate; An anti-reflective film is formed on the surface insulating film; Etch the antireflective film to form an opening in the antireflective film; A light-shielding portion is formed in the opening; and A covering film is formed on the light-shielding portion and the anti-reflective film.

19. The method according to claim 18, wherein, The formation of the light-shielding portion includes: A light-shielding film filling the opening is formed on the anti-reflective film; and The light-shielding film is planarized to form the light-shielding portion, and wherein, When the light-shielding film is planarized, it is over-etched so that the top surface of the light-shielding portion is lower than the top surface of the anti-reflective film.

20. The method according to claim 18, wherein, The formation of the light-shielding portion includes: A light-shielding film is formed on the anti-reflective film to fill the opening; Planarize the light-shielding film until the anti-reflective film is exposed to form the light-shielding portion; and Etching the exposed antireflective film, in which, The top surface of the etched antireflective film is lower than the top surface of the light-shielding portion.

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