Semiconductor wafer cutting tool

Abstract

The invention discloses a semiconductor wafer cutting tool which is of an annular disc-shaped structure and comprises a tool body base part and an annular blade part, a mounting hole matched with a main shaft of a scribing machine is formed in the center of the tool body base part, and the annular blade part is integrally formed on the outer circumference of the tool body base part through a powder metallurgy process. The cutter body base part sequentially comprises a hard cutter core layer, a middle vibration absorption layer and a cutter body outer layer from inside to outside, the mounting hole is located in the middle of the hard cutter core layer, the annular cutting edge part is located on the outer circumference of the cutter body outer layer, and the hard cutter core layer, the middle vibration absorption layer and the cutter body outer layer are combined into a whole through the radial gradient hot pressing sintering technology. According to the semiconductor wafer cutting tool, the tool body base part is formed by adopting a three-layer composite structure of the hard tool core layer, the middle vibration absorption layer and the tool body outer layer, and firm metallurgical bonding is realized among the layers through a radial gradient hot pressing sintering process, so that the conditions of edge breakage and microcracks during cutting of a semiconductor wafer can be effectively reduced; cutting precision and stability are improved; and the service life of a cutting tool is prolonged.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a semiconductor wafer cutting tool. BACKGROUND

[0002] Semiconductor chip packaging is a process of cutting and separating the chips on the finished wafer, and then connecting them with the outside through specific technical means to protect the chips and realize their electrical performance. The main process of semiconductor chip packaging includes chip cutting, die bonding, wire bonding, sealing, etc. In the semiconductor packaging process, the key step is to use a scriber equipped with an ultra-thin diamond cutting tool (dicing blade) to divide the wafer into independent chips (Die). The performance of the cutting tool (dicing blade) directly determines the cutting quality, efficiency and production cost.

[0003] However, the existing cutting tool (dicing blade) mainly has the following defects: 1. Stress and damage problem: the stress is concentrated on the cutting edge of the traditional homogeneous or simply plated blade body during high-speed cutting, which easily leads to wafer edge collapse and micro-crack, affecting the strength and yield of the chip. 2. Heat dissipation and thermal management problem: if the heat generated during cutting cannot be quickly and evenly dissipated, it will cause thermal deformation of the blade body, premature shedding of diamond abrasive particles, and may cause thermal damage to heat-sensitive wafer materials. 3. Rigidity-damping contradiction: the blade body needs high rigidity to ensure cutting accuracy and stability, while it also needs certain damping properties to absorb vibration, and a single material is difficult to optimize both performances. 4. Connection reliability problem of multi-layer structure: in order to improve performance, some cutting tools on the market use multi-layer composite structure, but the interlayer usually uses adhesive or single metallurgical bonding, which has the risk of interface separation caused by adhesive failure, insufficient bonding strength and mismatch of thermal expansion coefficient at high temperature. Therefore, in view of the above problems, it is urgent to design a new cutting tool. SUMMARY

[0004] The purpose of the present application is to provide a semiconductor wafer cutting tool with high cutting accuracy, small edge collapse, long service life and stable structure.

[0005] To solve the above technical problems, the present application can adopt the following technical solutions: A semiconductor wafer cutting tool, which is in a ring disc structure, comprises a blade body base and a ring-shaped cutting edge part. The blade body base is provided with a mounting hole in the center for cooperating with the main shaft of a scriber, and the ring-shaped cutting edge part is integrally formed on the outer circumference of the blade body base by powder metallurgy process. The blade body base comprises a hard blade core layer, a middle vibration absorption layer and a blade body outer layer from inside to outside in sequence. The mounting hole is located in the middle of the hard blade core layer, the ring-shaped cutting edge part is located on the outer circumference of the blade body outer layer, and the hard blade core layer, the middle vibration absorption layer and the blade body outer layer are combined into one body by radial gradient hot pressing sintering process.

[0006] In one of the embodiments, the outer circumferential side of the hard cutter core layer is provided with grooves penetrating through the axial direction and uniformly distributed along the circumferential direction, and the middle vibration absorbing layer has solidified parts corresponding to the grooves, and the solidified parts are arranged in the grooves to form a mechanical interlocking structure between the middle vibration absorbing layer and the hard cutter core layer.

[0007] In one of the embodiments, the radial thickness of the hard cutter core layer is 30%-50%, the radial thickness of the middle vibration absorbing layer is 30%-40%, and the radial thickness of the outer layer of the cutter body is 20%-30%.

[0008] In one of the embodiments, the cross-sectional shape of the grooves is trapezoidal or circular arc, and the depth of the grooves is 5%-25% of the radial thickness of the hard cutter core layer.

[0009] In one of the embodiments, the middle area between the outer circumferential surface and the mounting hole of the hard cutter core layer is uniformly distributed with one or more circles of blind holes along the circumferential direction, and the diameter of the blind holes is 0.5mm-2.0mm, and the depth of the blind holes is less than 20% of the axial thickness of the hard cutter core layer.

[0010] In one of the embodiments, the annular cutter blade part is composed of a plurality of cutter teeth uniformly and spacedly distributed along the outer circumferential surface of the outer layer of the cutter body, and a chip groove is formed between adjacent cutter teeth.

[0011] In one of the embodiments, the bottom of the chip groove is provided with an axial flow guide groove.

[0012] In one of the embodiments, the annular cutter blade part is made of diamond or cubic boron nitride abrasive particles combined with metal binder material, and is combined with the outer layer of the cutter body through the discharge plasma sintering process.

[0013] In one of the embodiments, the hard cutter core layer is made of tungsten carbide-based hard alloy or molybdenum alloy material, the middle vibration absorbing layer is made of copper-graphene composite material or titanium alloy-ceramic particle composite material, and the outer layer of the cutter body is made of martensitic stainless steel or special alloy steel material.

[0014] In one of the embodiments, the hole wall of the mounting hole is provided with a high-precision key groove or a flange surface. Advantages

[0015] 1. The middle vibration absorbing layer can efficiently suppress vibration, and the hard cutter core layer can ensure the stability of the cutting track, thereby forming a double effect to reduce the occurrence of semiconductor wafer edge collapse and micro-cracks, avoid cutting damage, and improve cutting precision.

[0016] 2. A highly efficient three-dimensional heat dissipation network can be formed by the high thermal conductivity hard core layer and the laterally diffused central vibration-absorbing layer to reduce the thermal load on the cutting tool and the workpiece, thereby achieving excellent heat dissipation performance.

[0017] 3. The base of the blade body is formed with a three-layer composite structure consisting of a hardened core layer, a middle vibration-absorbing layer, and an outer layer. This overcomes the performance limitations of a single material, enabling the cutting tool to achieve both high precision and high stability during high-speed cutting. Furthermore, the interlayer bonding strength of the three-layer composite structure is extremely high, with good fatigue and thermal shock resistance, making the base of the blade body less prone to deformation and delamination. The annular blade edge is firmly bonded, thereby improving the overall service life of the cutting tool. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the semiconductor wafer dicing tool of the present invention; Figure 2 A front view of the semiconductor wafer dicing tool of the present invention. Figure 1 ; Figure 3 A front view of the semiconductor wafer dicing tool of the present invention. Figure 2 ; Figure 4 This is a schematic diagram of the hard core layer of the semiconductor wafer dicing tool of the present invention; Figure 5 This is a schematic diagram of the middle vibration-absorbing layer of the semiconductor wafer dicing tool of the present invention; Figure 6 The semiconductor wafer dicing tool of the present invention Figure 1 Enlarged view of point A in the middle.

[0019] As shown in the attached diagram: 100. Base of the blade body; 110. Hardened core layer; 111. Groove; 112. Blind hole; 120. Central vibration-absorbing section; 121. Cured section; 130. Outer layer of the blade body; 200, Annular cutting edge; 210, cutting teeth; 220, chip groove; 221, flow guide groove. Detailed Implementation

[0020] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0021] It should be noted that when an element is said to be "fixed to" another element, it can be directly on the other element or there may be an intervening element. When an element is said to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. Conversely, when an element is said to be "directly on" another element, there is no intervening element. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0023] Please see Figures 1 to 6 A semiconductor wafer dicing tool has an annular disk-shaped structure, including a tool body base 100 and an annular cutting edge 200. The tool body base 100 has a mounting hole 300 at its center that mates with the spindle of a dicing machine. The annular cutting edge 200 is integrally formed on the outer circumference of the tool body base 100 by powder metallurgy. The tool body base 100 includes, from the inside out, a hard core layer 110, a central vibration-absorbing layer 120, and an outer cutting edge 130. The mounting hole 300 is located in the center of the hard core layer 110, and the annular cutting edge 200 is located on the outer circumference of the outer cutting edge 130. The hard core layer 110, the central vibration-absorbing layer 120, and the outer cutting edge 130 are bonded together by a radial gradient hot pressing sintering process.

[0024] Specifically, in this embodiment, the hard core layer 110, the middle vibration-absorbing layer 120, and the outer layer 130 are metallurgically bonded using a radial gradient hot-pressing sintering and diffusion welding composite process to form a three-layer composite structure for the blade base 100. This allows the blade base 100 to overcome the performance limitations of a single material, thereby enabling it to achieve both high precision and high stability during high-speed cutting. Furthermore, the radial gradient hot-pressing sintering and diffusion welding composite process ensures high interlayer bonding strength among the hard core layer 100, the middle vibration-absorbing layer 120, and the outer layer 130, resulting in improved fatigue and heat resistance. It has good impact resistance and makes the base 100 of the cutter body less prone to deformation and delamination, thereby improving the overall service life of the cutting tool. The central vibration-absorbing layer 120 can effectively suppress vibration, while the hard core layer 110 can ensure the stability of the cutting trajectory, thus forming a dual effect to reduce the occurrence of semiconductor wafer chipping and micro-cracks, avoid cutting damage, and improve cutting accuracy. At the same time, the high thermal conductivity hard core layer 110 and the laterally diffused central vibration-absorbing layer 120 can form an efficient three-dimensional heat dissipation network, which can also effectively reduce the thermal load on the cutting tool and the workpiece, thereby achieving excellent heat dissipation performance.

[0025] Specifically, during the metallurgical bonding of the blade base 110, a ring-shaped hard blade core layer 110 is used as a core mold. A central vibration-absorbing layer 120 material powder / preform is pre-prepared or laid on its outer surface. The outermost layer is then fitted with a tubular preform of the blade outer layer 130. The mold is then placed in an ultra-high pressure sintering furnace. Under the set temperature and pressure, the central vibration-absorbing layer 120 material undergoes atomic diffusion with the inner and outer layers (i.e., the hard blade core layer 110 and the blade outer layer 130), forming a strong, gradient transition bonding zone without a clear interface. This metallurgical bonding method, using a combination of radial gradient hot-pressing sintering and diffusion welding, effectively avoids adhesive bonding defects, thereby ensuring the hard blade core layer 110... The bonding reliability of the three layers—the central vibration-absorbing layer 120, the outer blade layer 130, and the inner layer—under high temperature and high stress is good, and it is also conducive to heat conduction and stress transfer. After the three-layer structure of the blade base 100 is completed, the abrasive powder of the annular blade edge 200 is directly sintered on the outer circumferential surface of the outer blade layer 130 using the spark plasma sintering (SPS) process. Because the spark plasma sintering process is fast and low temperature, a high-strength metallurgical bond can be formed on the outer circumferential surface of the outer blade layer 130. At the same time, it can also avoid thermal damage to the composite structure of the inner central vibration-absorbing layer 120 and the hard blade core layer 110, thereby making the cutting tool form an integrated seamless annular disk-shaped composite structure.

[0026] In this embodiment, power transmission is achieved through the mounting hole 300 in the middle of the hardened core layer 110, which mates with the spindle of the dicing machine. To facilitate assembly with the spindle, a high-precision keyway or flange surface (not shown in the figure and being prior art, it will not be elaborated upon here) is provided on the wall of the mounting hole 300. The hardened core layer 110 provides core rigidity and an axial heat conduction path. The central vibration-absorbing layer 120 converts the vibration energy generated during cutting into heat energy for dissipation, while the outer layer 130 of the blade serves as a robust base to support the annular cutting edge 2. The combination of 00 allows the annular cutting edge 200 to perform precise cutting. The heat generated during cutting is transferred from the annular cutting edge 200 through the outer layer 130 and the middle vibration-absorbing layer 120 to the high thermal conductivity hard core layer 110, and then dissipated through the spindle flange of the dicing machine. The vibration energy generated is effectively isolated and absorbed by the middle vibration-absorbing layer 120, which ultimately improves the cutting accuracy of the cutting tool and reduces the occurrence of chipping and micro-cracks in semiconductor wafers. At the same time, it can also improve the service life and structural stability of the cutting tool.

[0027] In addition, the hard core layer 110 in this embodiment is made of tungsten carbide-based cemented carbide or molybdenum alloy material, preferably ultrafine-grained (0.4μm-0.8μm grain size) tungsten carbide powder, with cobalt as the binder phase and a cobalt content of 10 wt%-15 wt%. This gives the hard core layer 110 high rigidity and high thermal conductivity. The hard core layer 110 made of this material can provide overall structural support for the cutting tool, ensuring dynamic rigidity under high-speed rotation, and quickly conducting the heat generated in the cutting area inward to the spindle of the dicing machine. The middle vibration-absorbing layer 120 tightly covers the outer circumference of the hard core layer 110 and is made of copper-graphene composite material or titanium alloy-ceramic particle composite material. Copper powder (purity >99.9%) is preferably used as the matrix, and 1-5 vol% of few-layer graphene nanosheets (thickness <5nm, sheet diameter 5μm-15μm) are uniformly mixed in as a thickener. The strong damping phase gives the middle vibration-absorbing layer 120 high damping characteristics, thus enabling it to absorb and dissipate radial and tangential vibrations generated during cutting, thereby suppressing resonance and laterally diffusing the conducted heat. The outer blade layer 130 tightly covers the outer circumference of the middle vibration-absorbing layer 120 and is made of martensitic stainless steel (such as 18Ni300) or special alloy steel. Because martensitic stainless steel or special alloy steel has high strength and wear resistance, it can better combine with the annular blade 200. The outer blade layer 130 can also protect the composite structure of the middle vibration-absorbing layer 120 and the hard blade core layer 110.

[0028] Please see Figures 2 to 5In order to improve the overall bonding strength and thermal management efficiency of the blade base 100, in this embodiment, the outer circumferential side surface of the hard blade core layer 110 is provided with grooves 111 that are axially continuous and evenly distributed circumferentially. The cross-sectional shape of the grooves 111 is trapezoidal or arc-shaped. The middle vibration-absorbing layer 120 has a curing part 121 corresponding to the grooves 111. The curing part 121 is placed in the grooves 111 so that the middle vibration-absorbing layer 120 and the hard blade core layer 110 form a mechanical interlocking structure.

[0029] After the hard core layer 110 is pre-sintered or sintered, several evenly spaced grooves 111 can be machined on its outer circumferential surface using laser etching or precision grinding. The hard core layer 110 with grooves 111 is placed in a mold, and then composite powder of the central vibration-absorbing layer 120 is filled in. The powder will fully fill and fill all the grooves 111 under vibration loading. Then, the preform of the outer layer 130 of the blade body is fitted on and radial gradient hot pressing sintering is performed. Under high temperature and high pressure, the vibration-absorbing layer material filled in the grooves 111 will be completely densified to form a solidified part 121. The solidified part 121 will form a strong metallurgical bond and mechanical interlock with the wall of the groove 111. The fit between the groove 111 and the solidified part 121 forms a "mortise and tenon effect", and after sintering, the central vibration-absorbing layer 120 is mechanically locked to the hard core layer 110 in the radial direction, thereby improving the performance of the central vibration-absorbing layer 120. The shear and peel resistance between the 20 and the hard core layer 110 effectively prevents the risk of interface separation that may occur under high centrifugal force or thermal shock. At the same time, the cooperation between the groove 111 and the solidified part 121 greatly increases the effective contact surface area between the middle vibration-absorbing layer 120 and the hard core layer 110, thereby opening up more and shorter "heat flow channels" for heat transfer from the middle vibration-absorbing layer 120 to the highly thermally conductive hard core layer 110, significantly reducing the interface thermal resistance and improving the overall heat dissipation efficiency of the cutting tool by more than 20%. In addition, the solidified parts 121 in several grooves 111 can form "micro dampers", which can more effectively dissipate the vibration energy transmitted radially and further improve the vibration absorption effect. Of course, the trapezoidal groove 111 can also make the stress distribution at the bonding interface more gentle, thereby avoiding the stress concentration phenomenon at the edge of the planar bonding interface.

[0030] Furthermore, in this embodiment, to achieve optimized synergy between rigidity and damping, the radial thickness t1 of the hard core layer 110 is 30%-50%, the radial thickness t2 of the central vibration-absorbing layer 120 is 30%-40%, and the radial thickness t3 of the outer layer 130 is 20%-30%. The hard core layer 110, with a radial thickness t1 of 30%-50%, preferably 40%, provides extremely high overall rigidity and a primary axial heat conduction path, ensuring minimal deformation of the cutting tool during high-speed rotation and under cutting resistance, thus guaranteeing the straightness and accuracy of the cutting path. Sufficient radial thickness also provides ample cross-sectional area, facilitating the rapid dissipation of the large amount of heat generated by the annular cutting edge 200 to the spindle of the dicing machine. The central vibration-absorbing layer 120, with a radial thickness t2 of 30%-40%, preferably 35%, provides sufficient volume and mass to effectively absorb and dissipate vibration energy, allowing it to accommodate sufficient damping material (such as graphene or ceramic particles), thereby forming an effective "viscoelastic" effect. The "hydraulic layer" maximizes the vibration absorption effect while ensuring rigidity. If the radial thickness of the central vibration-absorbing layer 120 is too thin, the amount of conductive vibration-absorbing material will be insufficient, resulting in poor damping effect. If the radial thickness is too thick, although the damping is better, it will excessively encroach on the space of the rigid core layer 110, leading to a decrease in the overall rigidity of the cutting tool and affecting accuracy. The outer layer 130 of the cutting tool with a radial thickness of 20%-30%, preferably 25%, can provide a reliable base for bonding with the annular cutting edge 200. It can also effectively protect the central vibration-absorbing layer 120 and the hard core layer 110 from external corrosion or damage. It can also help control the total mass of the cutting tool and is more friendly to the load of the high-acceleration dicing machine spindle motor.

[0031] In addition, the depth h of the groove 111 is 5%-25% of the radial thickness t1 of the hard core layer 110. The depth h is preferably 10%-20%. If the depth h of the groove 111 is too shallow, the mechanical interlocking effect between the hard core layer 110 and the central vibration-absorbing layer 120 will be insufficient. If the depth h of the groove 111 is too deep, the load-bearing structure of the hard core layer 110 will be excessively weakened. Therefore, setting the depth h of the groove 111 within this range can ensure the overall performance of the cutting tool.

[0032] Please see Figure 2 and Figure 4In this embodiment, one or more rings of blind holes 112 are evenly distributed circumferentially in the middle area between the outer circumference and the mounting hole 300 on both sides of the hard core layer 110. The diameter of the blind holes 112 is 0.5mm-2.0mm, and the depth of the blind holes 112 is less than 20% of the axial thickness of the hard core layer (the axial thickness of the cutting tool is 0.51mm-1.52mm). The evenly distributed ring or multiple rings of blind holes 112 can lay a better foundation for subsequent dynamic balancing and reduce the final balancing mass to be removed. At the same time, by setting the diameter and depth of the blind holes 112, the overall weight can be effectively reduced without weakening the rigidity of the hard core layer 110, which is conducive to achieving higher acceleration of the dicing machine spindle. Of course, the combination of blind holes 112 at specific positions can be used as an identifier for product model or installation direction.

[0033] For further details, please refer to Figure 1 , Figure 2 and Figure 6 In this embodiment, the annular cutting edge 200 is composed of a plurality of teeth 210 evenly spaced along the outer circumferential surface of the outer layer 130 of the cutting edge, and chip grooves 220 are formed between adjacent teeth 210. The annular cutting edge 200 is made of diamond or cubic boron nitride abrasive grains and a metal binder. Each tooth 210 is a mixture of diamond abrasive grains (10 μm in diameter) and a metal binder (such as cobalt or nickel), and is sintered on the outer circumferential surface of the outer layer 130 of the cutting edge under a spark plasma sintering process. During the sintering process, the metal binder of the tooth 210 diffuses with the surface atoms of the outer layer 130 of the cutting edge, thereby forming a strong metallurgical bond. This bond has a higher strength than traditional brazing or electroplating. By combining the integrated gradient cutting edge base 100 with the intermittent (i.e., evenly spaced) functional annular cutting edge 200, the occurrence of chipping and microcracks in semiconductor wafer cutting can be significantly reduced, and the cutting accuracy, stability and service life of the cutting tool can be improved.

[0034] Furthermore, the design of the spaced-out cutting teeth 210 allows for the formation of chip-collecting grooves 220 between adjacent cutting teeth 210. These grooves provide an escape channel for the fine chips generated during cutting, thus preventing chip accumulation, frictional heat generation, and blockage. Simultaneously, during cutting, coolant can reach the cutting front (i.e., the root of the cutting teeth 210) and the sides of each cutting tooth 210 directly through the chip-collecting grooves 220, achieving three-dimensional cooling. Additionally, the intermittent cutting tooth structure disrupts the continuity of vibration and sound waves, helping to reduce resonance and noise. It also provides space for the thermal expansion of the cutting teeth 210, reducing thermal stress accumulation and significantly saving expensive diamond abrasive while ensuring cutting efficiency.

[0035] Finally, in this embodiment, a guide groove 221 extending axially is also provided at the bottom of the chip groove 220. The guide groove 221 can more accurately guide the coolant entering the chip groove 220 to the root of the cutting tooth 210 (the core area where heat is generated), and enhance the axial flow of the coolant. At the same time, it can also provide a smoother axial discharge channel for fine chips, reduce the accumulation in the chip groove 220, thereby improving the chip removal and cooling effect of the cutting tool.

[0036] In summary, when the cutting tool of the present invention cuts semiconductor wafers, the spindle of the dicing machine drives the cutting tool to rotate at high speed, while the annular blade 200 contacts the wafer. The hard core layer 110 ensures that the overall runout of the cutting tool is minimal, the central vibration-absorbing layer 120 quickly absorbs the generated minor vibrations, and the cutting heat can be quickly conducted away by the base 100 of the blade body. Moreover, data from multiple cutting operations show that, compared with conventional nickel-based brazing cutting tools of the same specifications, the cutting tool of the present invention can reduce the average front-side chipping size of semiconductor wafers by 35% and the back-side chipping size by 50% when cutting semiconductor wafers, while increasing the cutting tool life by approximately 80%.

[0037] The foregoing has shown and described the basic principles, main features, and advantages of this invention. Those skilled in the art can readily implement this invention based on the accompanying drawings and the above description; however, any modifications, alterations, or variations made by those skilled in the art without departing from the scope of the invention's technical solution, utilizing the disclosed technical content, are equivalent embodiments of this invention; furthermore, any equivalent changes, alterations, or variations made to the above embodiments based on the essential technology of this invention still fall within the protection scope of this invention's technical solution.

Claims

1. A semiconductor wafer dicing blade in a ring-disk configuration, characterized by: The cutter body base is provided with a mounting hole in the center for matching with the main shaft of a wafer scribing machine, and the annular cutting edge part is integrally formed on the outer periphery of the cutter body base by a powder metallurgy process. The cutter body base comprises a hard cutter core layer, a middle vibration absorption layer and a cutter body outer layer from inside to outside, the mounting hole is located in the middle of the hard cutter core layer, the annular cutting edge part is located on the outer periphery of the cutter body outer layer, and the hard cutter core layer, the middle vibration absorption layer and the cutter body outer layer are combined into one by a radial gradient hot-pressing sintering process.

2. The semiconductor wafer dicing blade of claim 1, wherein: The outer periphery side of the hard cutter core layer is provided with grooves penetrating along the axial direction and uniformly distributed along the circumferential direction, and the middle vibration absorption layer has solidified parts corresponding to the grooves, so that the middle vibration absorption layer and the hard cutter core layer form a mechanical interlocking structure.

3. The semiconductor wafer dicing blade of claim 2, wherein: The radial thickness of the hard cutter core layer is 30%-50%, the radial thickness of the middle vibration absorption layer is 30%-40%, and the radial thickness of the cutter body outer layer is 20%-30%.

4. The semiconductor wafer dicing blade of claim 3, wherein: The cross-sectional shape of the groove is trapezoidal or circular arc, and the depth is 5%-25% of the radial thickness of the hard cutter core layer.

5. The semiconductor wafer dicing blade of claim 1, wherein: The two surfaces of the hard cutter core layer are uniformly distributed with one or more circles of blind holes in the middle area between the outer periphery and the mounting hole, the diameter of the blind hole is 0.5mm-2.0mm, and the depth of the blind hole is less than 20% of the axial thickness of the hard cutter core layer.

6. The semiconductor wafer dicing blade of claim 1, wherein: The annular cutting edge part is composed of a plurality of cutter teeth uniformly and spacedly distributed along the outer periphery surface of the cutter body outer layer, and a chip groove is formed between adjacent cutter teeth.

7. The semiconductor wafer dicing blade of claim 6, wherein: The bottom of the chip groove is provided with an axial flow guide groove.

8. The semiconductor wafer dicing blade of claim 6, wherein: The annular cutting edge part is made of diamond or cubic boron nitride abrasive particles combined with metal binder material, and is combined with the cutter body outer layer by a spark plasma sintering process.

9. The semiconductor wafer dicing blade of claim 1, wherein: The hard cutter core layer is made of tungsten carbide-based hard alloy or molybdenum alloy material, the middle vibration absorption layer is made of copper-graphene composite material or titanium alloy-ceramic particle composite material, and the cutter body outer layer is made of martensitic stainless steel or special alloy steel material.

10. The semiconductor wafer dicing blade of claim 1, wherein: The hole wall of the mounting hole is provided with a high-precision key groove or a flange surface.

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