Baffle structure and process equipment of semiconductor device

Abstract

The invention discloses a baffle structure and process equipment of a semiconductor device. The baffle structure is located above the spraying plate. The baffle structure comprises a baffle body provided with a plurality of air uniformizing holes; and the turbulent flow column is arranged on the lower surface of the baffle body, and a rectifying groove is formed in the outer surface of the turbulent flow column in the axial direction of the turbulent flow column so that large vortex airflow flowing into the gap between the baffle structure and the spraying plate can be divided into small vortex airflow. According to the invention, the periodic change of the air flow vortex between the baffle plate and the spraying plate can be destroyed, and the generation of cavity resonance phenomenon can be avoided, so that the risk of unbalanced matching of process parameters of two cavities can be reduced, the yield of the process result of a single cavity is improved, and the uniformity of the process result of multiple cavities can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a baffle structure and a process equipment of a semiconductor device. BACKGROUND

[0002] In the process of a semiconductor device, the flow stability of the gas flowing through the key structure is the core element to ensure the efficient and safe operation of the equipment. However, it is found that when the process gas flows through the gap between the baffle and the shower plate, the vortex of the gas flow between the baffle and the shower plate will be periodically changed due to the entrainment effect of the jet flow, the rotation torque generated by the rotation of the jet flow after impacting the shower plate, and the separation of the wall attachment flow and the influence of inertia. This periodically changing vortex will cause the pressure pulsation in the cavity. The pressure pulsation frequency is determined by the vortex period. The cavity also has a natural frequency, which is determined by the volume, inlet and outlet size, material and other factors of the cavity, and is the natural vibration frequency of the cavity.

[0003] When the pressure pulsation frequency (such as 20 Hz) is close to the natural frequency (such as 20.1 Hz) of the cavity, the energy of the pressure pulsation will be continuously absorbed and amplified by the cavity, so that the originally small pressure fluctuation (such as ±0.1 Pa) will be significantly amplified (such as amplified to ±1 Pa or even higher), resulting in Helmholtz resonance (cavity resonance). This cavity resonance will cause the pressure in the cavity to fluctuate violently, causing problems such as uneven film thickness on the wafer surface and increased particle contamination.

[0004] In addition, once the cavity resonance occurs in a certain chamber, the amplified pressure fluctuation will be coupled to another chamber through the connecting pipeline, causing the small frequency difference between the two chambers to be amplified by resonance, and thus causing a significant mismatch problem between the two chambers. The mismatch between the two chambers includes the key parameters such as pressure, gas flow velocity, and temperature of the two chambers that cannot be matched synchronously, thereby affecting the uniformity of the process results of each chamber.

[0005] In order to solve the above problems in the prior art, there is an urgent need in the art for an improved baffle structure that can destroy the periodic change of the vortex of the gas flow between the baffle and the shower plate, avoid the occurrence of cavity resonance, and thus reduce the risk of mismatch between the process parameters of the two chambers. Not only can it improve the yield of the process results of a single chamber, but also can improve the uniformity of the process results of multiple chambers. SUMMARY

[0006] The following gives a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an extensive overview of all contemplated aspects, and is neither intended to identify key or critical elements of all aspects nor to delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description to be given later.

[0007] To overcome the aforementioned deficiencies in the prior art, the present invention provides a baffle structure and a semiconductor device process apparatus that can disrupt the periodic changes of the airflow vortex between the baffle and the spray plate, avoid the occurrence of cavity resonance, thereby reducing the risk of process parameter mismatch between the two chambers. This not only improves the yield of the process results in a single chamber, but also enhances the uniformity of the process results in multiple chambers.

[0008] Specifically, according to the first aspect of the present invention, the baffle structure is located above the spray plate. The baffle structure includes: a baffle body having a plurality of air equalization holes; and a turbulence column disposed on the lower surface of the baffle body, wherein the outer surface of the turbulence column has a flow straightening groove along its axial direction to divide the large vortex airflow flowing into the gap between the baffle structure and the spray plate into small vortex airflow.

[0009] Furthermore, in some embodiments of the present invention, the air distribution holes include a combination of large air distribution holes and small air distribution holes, and the turbulence columns are distributed at least at multiple locations near the large air distribution holes.

[0010] Furthermore, in some embodiments of the present invention, the turbulence columns are distributed at multiple locations on the edge region of the lower surface of the baffle body.

[0011] Furthermore, in some embodiments of the present invention, the height of the turbulence column does not exceed 3 / 5 of the gap distance between the baffle body and the spray plate.

[0012] Furthermore, in some embodiments of the present invention, a plurality of bottom-opening rectifier slots are evenly distributed at the bottom of the turbulence column.

[0013] Furthermore, in some embodiments of the present invention, the rectifier slot includes one or a combination of more of the following: a rectangular rectifier slot with a bottom opening, a V-shaped rectifier slot, an arc-shaped rectifier slot, a U-shaped rectifier slot, and a trapezoidal rectifier slot.

[0014] Furthermore, in some embodiments of the present invention, the width of the rectifier groove is between 0.5 and 0.8 mm.

[0015] Furthermore, in some embodiments of the present invention, the depth of the rectifier groove is between 0.25 and 0.5 mm.

[0016] Furthermore, the semiconductor device process equipment provided according to the second aspect of the present invention includes: a process chamber for performing process processing; a spray plate disposed above the process chamber for providing process gas within the process chamber; and the baffle structure provided in the first aspect of the present invention disposed above the spray plate for dividing the large vortex airflow flowing into the gap between the baffle structure and the spray plate into small vortex airflows to reduce the pressure pulsation frequency caused by the large vortex airflow.

[0017] Furthermore, in some embodiments of the present invention, the process equipment includes a plurality of said process chambers, and the inherent frequency of each said process chamber is different. Attached Figure Description

[0018] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0019] Figure 1 A schematic diagram of a process apparatus for a semiconductor device according to some embodiments of the present invention is shown.

[0020] Figure 2 A schematic diagram of a baffle structure provided according to some embodiments of the present invention is shown.

[0021] Figures 3A-3D A schematic diagram of the rectifier tank provided according to some embodiments of the present invention is shown.

[0022] Figure 4 A schematic diagram illustrating the destructive effect of a baffle structure provided according to some embodiments of the present invention on large vortex airflow is shown.

[0023] Figure 5A The deposition film thickness curves corresponding to the baffle structure in the prior art are shown.

[0024] Figure 5B The deposition film thickness curves corresponding to the baffle structure provided by the present invention are shown.

[0025] Figure 6A The extinction coefficient curves of the thin film corresponding to the baffle structure in the prior art are shown.

[0026] Figure 6B The extinction coefficient curve of the thin film corresponding to the baffle structure provided by the present invention is shown.

[0027] Figure label:

[0028] 100. Process equipment for semiconductor devices;

[0029] 110 process chambers;

[0030] 120 spray plate;

[0031] 121 gap;

[0032] 130 top cover plate;

[0033] 140, 410 baffle structure;

[0034] 141 Baffle body;

[0035] 142 spoiler columns;

[0036] 143 rectifier slots;

[0037] 1431 Rectangular rectifier slot;

[0038] 1432 V-shaped rectifier slot;

[0039] 1433 arc-shaped rectifier slot;

[0040] 1434 U-shaped rectifier slot;

[0041] 1435 trapezoidal rectifier slot;

[0042] 144 uniform pores. Detailed Implementation

[0043] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0044] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0045] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0046] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0047] As mentioned above, it has been found that when process gas flows through the gap between the baffle and the spray plate, periodically changing vortices are generated due to the entrainment effect of the jet, the rotational torque generated after the jet impacts the spray plate, and the separation of the flow along the wall and its inertia. These periodically changing vortices can cause pressure pulsations in the cavity. When the frequency of the pressure pulsations is close to the natural frequency of the cavity, Helmholtz resonance (cavity resonance) occurs. This cavity resonance can lead to drastic pressure fluctuations within the cavity, causing problems such as uneven film thickness on the wafer surface and increased particulate contamination. Furthermore, once cavity resonance occurs in one chamber, its amplified pressure fluctuations can couple to another chamber through the connecting pipe, causing the minute frequency differences between the two chambers to be amplified by resonance, resulting in a significant mismatch problem between the two chambers.

[0048] To address the aforementioned problems in the prior art, this invention provides a baffle structure and a semiconductor device process apparatus that can disrupt the periodic changes in airflow vortices between the baffle and the spray plate, avoiding the generation of cavity resonance. This reduces the risk of process parameter mismatch between the two chambers, improving not only the yield of single-chamber process results but also the uniformity of multi-chamber process results.

[0049] In some non-limiting embodiments, the baffle structure provided in the first aspect of the present invention can be configured in the process equipment of the semiconductor device provided in the second aspect of the present invention.

[0050] The working principle of the baffle structure described above will be described below with reference to embodiments of semiconductor device process equipment. Those skilled in the art will understand that these embodiments of semiconductor device process equipment are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all operating modes or functions of the baffle structure. Similarly, the baffle structure is also only one non-limiting implementation provided by the present invention and does not constitute a limitation on all operating modes or functions of these semiconductor device process equipment.

[0051] Please refer to Figure 1 , Figure 1 A schematic diagram of a process apparatus for a semiconductor device according to some embodiments of the present invention is shown.

[0052] like Figure 1 As shown, in some embodiments of the present invention, the semiconductor device process equipment 100 may include a process chamber 110, a spray plate 120, and a baffle structure 140.

[0053] Specifically, the interior of the process chamber 110 is primarily used for process treatment. Process treatment can include, but is not limited to, various thin film fabrication processes such as plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and metal-organic chemical vapor deposition (MOCVD), or etching processes such as dry etching and wet etching. The process chamber 110 can be configured with corresponding structures and accessories to meet the specific requirements of the aforementioned semiconductor manufacturing processes; no limitations are specified here. A spray plate 120 can be positioned above the process chamber 110 via a top cover plate 130 to uniformly introduce process gases from above the process chamber 110, facilitating process treatment on the upper surface of the reactant.

[0054] like Figure 1 As shown in the magnified area I, a baffle structure 140 is disposed above the spray plate 120. The baffle structure 140 has multiple air-distributing holes 144. The air-distributing holes 144 may include a combination of large and small air-distributing holes. The baffle structure 140 can pre-distribute the process gas, causing it to diffuse from the central region to the edge region before being conveyed to the spray plate 120 via the air-distributing holes 144. The gas then enters the process chamber 110 through the spray plate 120. Furthermore, during the chamber cleaning process, the baffle structure 140 can also slow down the backflow of cleaning gas into the upper process pipeline, thereby reducing the risk of pipeline contamination.

[0055] In some embodiments of the present invention, the baffle structure 140 can further divide the large vortex airflow flowing into the gap 121 between the baffle structure 140 and the spray plate 120 into small vortex airflows, thereby reducing the pressure pulsation frequency caused by the large vortex airflow. By reducing the pressure pulsation frequency caused by the large vortex airflow, the proximity of the pressure pulsation frequency to the cavity's natural frequency can be reduced, thereby reducing the occurrence of cavity resonance phenomena. This helps to improve problems such as uneven film thickness and particle contamination on the wafer surface, and improves the yield of the process results.

[0056] Specifically, it can be combined with Figure 2 A shared understanding. Figure 2 A schematic diagram of a baffle structure provided according to some embodiments of the present invention is shown.

[0057] like Figure 2 In the illustrated embodiment, the baffle structure 140 located above the spray plate 120 mainly includes a baffle body 141 and a baffle column 142. The baffle column 142 is disposed on the lower surface of the baffle body 141. Further, as Figure 2 As shown in the magnified area II, the outer surface of the turbulence column 142 may be provided with a flow straightening groove 143 along its axial direction to divide the large vortex airflow into the gap 121 between the baffle structure 140 and the spray plate 120 into small vortex airflow.

[0058] In this embodiment, the airflow channel below the baffle body 141 is divided into multiple narrow streams by the baffle column 142 located on the lower surface of the baffle body 141. After the high-speed jet impacts the baffle column 142, it is forced to flow around the column, thus causing the airflow that could have formed a large vortex with a diameter of 10cm to be divided into small airflows that can only flow within a 1-2cm gap between the columns, without enough space to form a large-scale rotation. The straightening groove 143 located on the outer surface of the baffle column 142 can change the direction of the airflow. For example, the axial straightening groove can guide the airflow along the groove. The transverse straightening groove can cut the airflow. Therefore, through the straightening groove 143, the jet that originally flowed in a single direction can be split into multiple small airflows in different directions, thereby further disrupting the overall rotation trend required for a large vortex.

[0059] Furthermore, after the process gas passes through the aforementioned turbulence column 142, the airflow is split into multiple streams. Each stream exhibits slight differences in flow velocity and turning time. For example, some streams arrive at a certain position 0.01 seconds after circling the column, while others arrive in 0.012 seconds. This phase difference results in completely different generation times and rotation directions for small vortices. Therefore, the fragmented, chaotically phased streams cannot synchronously accumulate and detach to form periodic vortices like large vortices. The pressure fluctuations (local pressure increases / decreases) of countless disordered small vortices cancel each other out. For instance, a pressure increase caused by a small vortex will be neutralized by a pressure decrease from an adjacent small vortex. Ultimately, the overall pressure fluctuation within the cavity is significantly reduced, transforming from periodic strong pulsations to irregular weak fluctuations, thereby completely preventing the triggering of Helmholtz resonance.

[0060] Furthermore, such as Figure 2 As shown, in some optional embodiments, the turbulence columns 142 can be distributed at least in multiple locations near the large air-measuring holes in the baffle body 141. Specifically, after the airflow is ejected from the large air-measuring holes in the baffle body 141, it will maintain a straight-line motion due to inertia. At the same time, affected by the friction of the edge wall of the hole, the airflow outside the jet will be decelerated, forming a low-speed boundary layer. At this time, the airflow flows close to the lower surface wall of the baffle body 141. When the jet flows forward for a certain distance, the energy of the low-speed boundary layer will be exhausted by the wall friction, and it will no longer be able to follow the direction of the high-speed jet. At this time, the flow close to the wall will separate from the wall. The separated low-speed airflow will be drawn in by the mainstream of the jet, forming a vortex. In this regard, by setting multiple turbulence columns 142 in the area near the large air-measuring holes of the baffle body 141, the vortex effect in the large hole area between the baffle body 141 and the spray plate 120 can be improved, and the occurrence of airflow stagnation and swirling at the large holes can be reduced.

[0061] In some alternative embodiments, the turbulence columns 142 can also be distributed at multiple locations on the edge region of the lower surface of the baffle body 141. Since the edge region of the baffle body 141 and the spray plate 120 is the boundary of the chamber wall, the airflow boundary conditions are more complex. Gas flowing towards the edge region is forced to change direction due to the obstruction of the boundary wall, easily inducing vortices. Furthermore, the gas near the wall slows down due to frictional resistance, while the mainstream gas away from the wall flows faster. This shearing effect of fast and slow airflows tears the airflow, forming rotating vortices. To address this, by providing multiple turbulence columns 142 on the edge region of the lower surface of the baffle body 141, the corner vortex effect in the edge region between the baffle body 141 and the spray plate 120 can be improved, reducing the occurrence of airflow stagnation and swirling at the corners.

[0062] Furthermore, optionally, the turbulence columns 142 can also be distributed at multiple locations in the central region of the lower surface of the baffle body 141. By distributing the turbulence columns 142 at multiple locations on the lower surface of the baffle body 141, the vortex effect in the plane of the gap 121 between the baffle body 141 and the spray plate 120 can be improved as a whole.

[0063] In some alternative embodiments, the turbulence columns 142 are also specifically positioned at multiple locations within the area where the aforementioned vortex effect is likely to occur, based on the actual structural configuration of the baffle body 141 and the spray plate 120, in order to break the large vortex airflow flowing through the area into smaller vortex airflow. For example, multiple (e.g., 6) turbulence columns 142 can be provided in the central region or eccentric region of the baffle body 141.

[0064] Furthermore, combined Figure 1 Local magnified region I and Figure 2 As shown, in some embodiments, the height h of the turbulence column 142 preferably does not exceed 3 / 5 of the distance 121 between the baffle body 141 and the spray plate 120. For example, the height h of the turbulence column 142 above the baffle body 141 can be between 1 and 7 mm. In this invention, the purpose of setting the turbulence column 142 above the baffle body 141 is to break the large, periodic vortices near the large holes in the baffle body 141 into disordered small vortices, thus achieving a rectification effect. By controlling the height h of the turbulence column 142 to within 3 / 5 of the distance 121 (e.g., within 7 mm), the process gas blocking effect caused by the turbulence column 142 being too close to the spray plate 120 below it can be avoided. This is especially true when the process gas is a fluorine-containing cleaning gas, which is often corrosive. If the cleaning gas accumulates in the gap 121 between the baffle body 141 and the spray plate 120, it will cause the concentration of the cleaning gas in the gap 121 to be too high, which will corrode the baffle structure 140 and / or the spray plate 120.

[0065] Continue as Figure 2 As shown, in some embodiments, a plurality of bottom-opening straightening slots 143 may be evenly distributed at the bottom of the turbulence column 142. Optionally, the number of straightening slots 143 may be 4 to 12. By providing a plurality of straightening slots 143 at the bottom of the outer surface of the turbulence column 142, the number of airflow segments can be increased, dividing the airflow into multiple small airflows with slight differences in flow velocity and turning time, thereby avoiding the generation of periodic large vortices.

[0066] Next, please refer to Figures 3A-3D . Figures 3A-3D A schematic diagram of the rectifier tank provided according to some embodiments of the present invention is shown.

[0067] likeFigure 2 and Figures 3A-3D As shown, in some embodiments, the rectifier slot 143 may include one or a combination of more of the following: a rectangular rectifier slot 1431 with a bottom opening, a V-shaped rectifier slot 1432, an arc-shaped rectifier slot 1433, a U-shaped rectifier slot 1434, and a trapezoidal rectifier slot 1435. For example, the rectifier slot 143 surrounding the outer surface of the spoiler column 142 may be a plurality of rectangular rectifier slots 1431 with bottom openings. As another example, the rectifier slot 143 surrounding the outer surface of the spoiler column 142 may be a combination of a plurality of rectangular rectifier slots 1431 and V-shaped rectifier slots 1432 with bottom openings. Those skilled in the art can select and combine these rectifier slots based on the actual size of the spoiler column 142, the difficulty of creating the above-mentioned different shaped rectifier slot structures, and the processing cost.

[0068] Continue as Figure 2 and Figures 3A-3D As shown, further, in some embodiments, the width w of the rectifier slot 143 is preferably between 0.5 and 0.8 mm. Test results show that the vortex-breaking and rectification effect is best when the width w of the rectifier slot 143 is controlled between 0.5 and 0.8 mm. If the width w is less than 0.5 mm, the vortex-breaking capability for large vortices will be insufficient. Conversely, if the width w is set to be greater than 0.8 mm, the number of rectifier slots 143 that can be set on the bottom surface of a single turbulence column 142 will decrease, thus affecting the vortex-breaking effect.

[0069] In addition, continue as Figure 2 and Figures 3A-3D As shown, in some embodiments, the groove depth d of the rectifier groove 143 is preferably between 0.25 and 0.5 mm. Test results show that controlling the groove depth d of the rectifier groove 143 between 0.25 and 0.5 mm can improve vortex breaking efficiency. When the groove depth d is less than 0.25 mm, the depth is insufficient, leading to incomplete vortex breaking. If the groove depth d is greater than 0.5 mm, it will cause a significant increase in processing difficulty and cost. Moreover, the strength of the rectifier groove 143 cannot be guaranteed at this depth.

[0070] In some optional embodiments, the baffle structure 140, including the baffle body 141 and the turbulence column 142, can be integrally manufactured by casting, welding, or stamping to meet the requirements of convenient processing in the mass production stage. The air distribution holes 144 in the baffle structure 140 can be machined. In other optional embodiments, the turbulence column 142 is disposed in a turbulence bushing. By attaching the turbulence bushing to the lower surface of the baffle body 141, the baffle structure 140 including the turbulence column 52 is obtained.

[0071] This concludes the basic description of the main structure of the baffle structure 140 provided in the first aspect of the present invention.

[0072] Continue back Figure 1 ,exist Figure 1 In the illustrated embodiment, the semiconductor device process equipment may include multiple process chambers 110 for simultaneously performing the same or different process steps, thereby increasing equipment throughput. Each process chamber 110 has a slightly different inherent frequency due to factors such as processing precision and installation errors. For example, Figure 1 The natural frequency of the left cavity is 20.1 Hz, and the natural frequency of the right cavity is 20.3 Hz, with a difference of 0.2 Hz between the two.

[0073] Furthermore, please combine Figure 4 A shared understanding. Figure 4 A schematic diagram illustrating the destructive effect of a baffle structure provided according to some embodiments of the present invention on large vortex airflow is shown.

[0074] like Figure 4 As shown, during the process using the existing baffle structure 410, the periodically fluctuating large vortex formed near the large gas-uniforming hole of the baffle structure 410 will cause cavity resonance with the semi-enclosed cavity filled with process gas (such as SiH4) above it. To address this, in this invention, by setting multiple turbulence-inducing pillars 142 higher than the baffle body 141 on the lower surface of the baffle body 141, and setting several rectifier grooves 143 on the outer surface of the turbulence-inducing pillars 142, the periodically fluctuating large vortex near the large gas-uniforming hole can be broken into disordered small vortices, thereby eliminating the cavity resonance phenomenon caused by the periodic changes of the large vortex. This reduces the risk of process parameter mismatch between the two chambers due to cavity resonance. For the process equipment 100 of multi-chamber semiconductor devices, this invention not only improves the yield of single-chamber process results but also enhances the uniformity of multi-chamber process results.

[0075] Next, please refer to Figure 5A and Figure 5B . Figure 5A The deposition film thickness curves corresponding to the baffle structure in the prior art are shown. Figure 5B The deposition film thickness curves corresponding to the baffle structure provided by the present invention are shown.

[0076] like Figure 5A As shown, in the first and second process chambers using the existing baffle structure 410, after the deposition process is completed in both chambers, the deposition film thickness curves are S1 and S2, respectively. Correspondingly, as... Figure 5B As shown, the baffle structure 410 in the first and second process chambers is replaced with the baffle structure 140 of this invention. After the deposition process is completed in both chambers, the adhesion of the deposition film thickness curves S1 and S2 is significantly better than that of the existing baffle structure 410.

[0077] In addition, please see Figure 6A and Figure 6B . Figure 6A The extinction coefficient curves of the thin film corresponding to the baffle structure in the prior art are shown. Figure 6B The extinction coefficient curve of the thin film corresponding to the baffle structure provided by the present invention is shown.

[0078] like Figure 6A As shown, in the first and second process chambers using the existing baffle structure 410, after the deposition process is completed in both chambers, the extinction coefficient curves of the thin film are S3 and S4, respectively. Correspondingly, as... Figure 5B As shown, the baffle structure 410 in the first and second process chambers is replaced with the baffle structure 140 of this invention. After the deposition process is completed in both chambers, the adhesion of the film extinction coefficient curves S3 and S4 is also better than that of the existing baffle structure 410.

[0079] Through the above Figure 5A , 5B As shown in 6A and 6B, by using the baffle structure 140 with a baffle column 142 and a rectifier groove 143 provided by the present invention for deposition process, since cavity resonance is eliminated, the small frequency difference between the two chambers will not be amplified by resonance, the problem of process parameter mismatch in the central region of the two chambers is improved, and the uniformity of the deposited film thickness in each chamber is significantly improved.

[0080] In summary, the present invention provides a baffle structure and a semiconductor device process apparatus that can disrupt the periodic changes of airflow vortices between the baffle and the spray plate, avoid the occurrence of cavity resonance, thereby reducing the risk of process parameter mismatch between the two chambers. This not only improves the yield of process results in a single chamber, but also enhances the uniformity of process results in multiple chambers.

[0081] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0082] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A baffle structure located above a shower plate, characterized in that, The baffle structure comprises: a baffle body provided with a plurality of uniform gas holes; and a turbulence column provided on the lower surface of the baffle body, the outer surface of the turbulence column being provided with a flow regulating groove along the axial direction thereof to divide the large vortex airflow flowing into the gap between the baffle structure and the shower plate into small vortex airflows.

2. The baffle structure of claim 1, wherein The uniform gas holes comprise a combination of uniform large holes and uniform small holes, and the turbulence columns are distributed at least at multiple positions near the uniform large holes.

3. The baffle structure of claim 1, wherein The turbulence columns are distributed at multiple positions of the edge region of the lower surface of the baffle body.

4. The baffle structure of claim 1, wherein The height of the turbulence column is not more than 3 / 5 of the gap distance between the baffle body and the shower plate.

5. The baffle structure of claim 1, wherein The bottom of the turbulence column is uniformly provided with a plurality of bottom opening flow regulating grooves.

6. The baffle structure of claim 5, wherein The flow regulating groove comprises one or more of a combination of a rectangular bottom opening flow regulating groove, a V-shaped flow regulating groove, an arc-shaped flow regulating groove, a U-shaped flow regulating groove, and a trapezoidal flow regulating groove.

7. The baffle structure of claim 5, wherein The groove width of the flow regulating groove is between 0.5-0.8 mm.

8. The baffle structure of claim 5, wherein The groove depth of the flow regulating groove is between 0.25-0.5 mm.

9. A process apparatus for a semiconductor device, characterized by comprising: It comprises: a process chamber, the inside of which is used for process treatment; a shower plate provided above the process chamber for providing process gas in the process chamber; and a baffle structure according to any one of claims 1-8 provided above the shower plate for dividing the large vortex airflow flowing into the gap between the baffle structure and the shower plate into small vortex airflows to reduce the pressure pulsation frequency caused by the large vortex airflow. A plurality of process chambers are included, and the cavity inherent frequencies of each process chamber are different.

10. The process apparatus of claim 9, wherein, A plurality of process chambers are included, and the cavity inherent frequencies of each process chamber are different.

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