Mask pattern correction method and device, storage medium and program product

Abstract

The embodiment of the invention provides a mask pattern correction method and device, a storage medium and a program product, and the method comprises the steps: carrying out the mask rule inspection of a target pattern of a concave structure or a convex structure in a mask pattern, and determining a violation pattern. For the violation pattern, a first correction cost for the projection height or recess depth correction and a second correction cost for the structure width correction are determined. And when the first correction cost is smaller than or equal to the second correction cost, performing local height or depth correction. According to the technical scheme provided by the invention, the concave-convex structure graph with the violation problem in the mask graph can be accurately and effectively corrected. It is fully guaranteed that the difference between the corrected pattern and an original ideal mask plate pattern is small, and the phenomenon that a new pattern structure is generated due to the fact that deformation of other line segments is affected can also be avoided through the structure thickness correction mode. Chain reaction caused by edge movement and interference on geometric attributes of adjacent line segments are effectively eliminated, and the correction efficiency and the correction effect of the mask pattern are greatly improved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of computational lithography, and particularly relates to a mask pattern correction method and device, a storage medium and a program product. BACKGROUND

[0002] In the field of computational lithography, mask pattern correction is a key link in optical proximity correction (OPC), and is crucial to guaranteeing the accuracy of the final pattern on a chip and the yield of the chip.

[0003] At present, in the process of processing mask pattern violations, the traditional mask correction method often uses a simple edge translation operation to expand or shrink the size of the pattern. This method has a fundamental defect, which seriously ignores the inherent strong coupling relationship between edges in the mask geometry. When the length of a single edge is corrected, it will directly affect the geometric properties of its adjacent edges, and it is extremely easy to generate new and unexpected geometric structures in the mask pattern. Such problems not only introduce unpredictable subsequent violations, but also can cause the entire correction process to deviate from the optimal solution, and the mask pattern can fall into repeated iteration or even cannot converge, which seriously slows down the correction efficiency and reduces the mask correction effect.

[0004] Therefore, how to efficiently and accurately correct the mask pattern is an important problem to be solved at present. SUMMARY

[0005] The embodiments of the present application provide a mask pattern correction method, device, storage medium and program product, which can effectively improve the correction rate and correction effect of the mask pattern.

[0006] In a first aspect, the embodiments of the present application provide a mask pattern correction method, comprising: performing mask rule checking on at least one target pattern contained in the mask pattern based on a preset mask manufacturing rule, regarding a target pattern that does not pass the mask rule checking as a violation pattern, and the target pattern being a convex structure pattern or a concave structure pattern; determining a first correction cost of correcting the convex height or the concave depth of the violation pattern, and a second correction cost of length correction of the convex top line segment or the concave bottom line segment of the violation pattern, the first correction cost or the second correction cost representing the difference between the corrected pattern of the violation pattern and the violation pattern; correcting the convex height or the concave depth of the violation pattern in the case that the first correction cost is less than or equal to the second correction cost.

[0007] In a second aspect, the embodiments of the present application provide a mask pattern correction device, comprising: a rule checking unit, configured to perform mask rule checking on at least one target pattern contained in the mask layout based on preset mask manufacturing rules, and take a target pattern that fails the mask rule checking as a rule violation pattern, the target pattern being a protruding structure pattern or a recessed structure pattern; a cost determining unit, configured to determine a first correction cost of correcting a protruding height or a recessed depth of the rule violation pattern, and a second correction cost of correcting a length of a protruding top line segment or a recessed bottom line segment of the rule violation pattern, the first correction cost or the second correction cost representing a difference degree between a corrected pattern of the rule violation pattern and the rule violation pattern; a layout correcting unit, configured to correct the protruding height or the recessed depth of the rule violation pattern when the first correction cost is less than or equal to the second correction cost.

[0008] In a third aspect, an electronic device is provided, which includes a processor, a memory, and a program or instructions stored in the memory and executable on the processor, and the program or instructions, when executed by the processor, implement the steps of any of the mask layout correction methods of the embodiments of the present application.

[0009] In a fourth aspect, a readable storage medium is provided, which stores a program or instructions, and the program or instructions, when executed by a processor, implement the steps of any of the mask layout correction methods of the embodiments of the present application.

[0010] In a fifth aspect, a computer program product is provided, and the instructions in the computer program product, when executed by a processor of an electronic device, enable the electronic device to perform the steps of any of the mask layout correction methods of the embodiments of the present application.

[0011] The technical solutions provided by the embodiments of the present application at least bring the following beneficial effects: The mask layout correction method provided by the embodiments of the present application includes: first, mask rule checking can be performed on target patterns that are recessed structures or protruding structures in a mask layout, and rule violation patterns that fail the mask rule checking are determined. For the rule violation patterns, a first correction cost of correcting a protruding height or a recessed depth can be determined, and a second correction cost of correcting a length of a protruding top line segment or a recessed bottom line segment can be determined. When the first correction cost is less than or equal to the second correction cost, local thickness correction can be directly performed on the rule violation patterns in the mask layout.

[0012] The technical scheme provided by the embodiment of the present application can accurately and effectively correct the concave-convex structure pattern with the violation problem in the mask layout. Moreover, by comparing the correction cost to determine the thickness correction mode, the difference between the corrected pattern and the original mask layout is small, and the concave-convex thickness correction mode can also avoid generating new pattern structures. The chain reaction caused by edge movement and the interference with the geometric properties of adjacent line segments are effectively eliminated, and the correction efficiency and correction effect of the mask layout are greatly improved.

[0013] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. BRIEF DESCRIPTION OF DRAWINGS

[0014] In order to more clearly illustrate the technical scheme of the embodiment of the present application, the drawings required to be used in the embodiment of the present application will be briefly introduced below. Those skilled in the art can also obtain other drawings according to these drawings without creating creative labor.

[0015] Figure 1 One of the flowcharts of the mask layout correction method provided by an embodiment of the present application; Figure 2(a) is one of the structure schematic diagrams of a target pattern provided by an embodiment of the present application; Figure 2(b) is another of the structure schematic diagrams of a target pattern provided by an embodiment of the present application; Figure 3(a) is one of the example schematic diagrams of mask layout correction provided by an embodiment of the present application; Figure 3(b) is another of the example schematic diagrams of mask layout correction provided by an embodiment of the present application; Figure 4 The second flowchart of the wafer image correction method provided by an embodiment of the present application; Figure 5 The structure schematic diagram of the mask layout correction device provided by another embodiment of the present application; Figure 6 The hardware structure schematic diagram of the mask layout correction device provided by another embodiment of the present application. DETAILED DESCRIPTION

[0016] The features and exemplary embodiments of various aspects of this application will be described in detail below. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.

[0017] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0018] In the field of computational lithography, mask pattern correction is an important step in the process of optical proximity effect correction, and it is a key step to ensure the accuracy of the pattern on the final chip and the chip production yield.

[0019] Traditional methods for correcting mask layouts often employ simple edge translation operations to expand or shrink graphic dimensions when addressing graphic violations on the mask layout. This approach severely ignores the strong coupling relationships between edges in the mask layout's geometry.

[0020] Adjusting the length of a single side directly alters the geometric properties of its adjacent sides, potentially generating new and unintended geometric structures in the mask layout. This can introduce unpredictable new violations and cause the entire mask correction process to deviate from the optimal solution, leading to repeated iterations or even failure to convergence. This severely slows down layout correction efficiency and reduces correction effectiveness, ultimately impacting chip manufacturing efficiency and quality.

[0021] Based on the above-mentioned technical problems, embodiments of this application provide a mask layout correction method, device, storage medium, and program product. The method includes: performing mask rule checks on target graphics with recessed or raised structures in the mask layout to identify non-compliant graphics that fail the mask rule check.

[0022] Then, for the irregular patterns in the mask layout, a first correction cost can be determined to modify the height of the protrusions or the depth of the depressions, and a second correction cost can be determined to modify the length of the top line segment of the protrusion or the bottom line segment of the depression. When the first correction cost is less than or equal to the second correction cost, the irregular patterns in the mask layout can be directly corrected locally in terms of thickness.

[0023] The technical solution provided in this application can accurately and effectively correct irregularities in the raised and recessed structures of a mask layout. In this solution, by comparing the correction costs of different methods, a thickness correction method is selected for irregularity correction. This ensures that the corrected pattern is as close as possible to the original mask layout, while also preventing the creation of new pattern structures due to deformation of other line segments. It effectively eliminates the chain reaction caused by edge movement and interference with the geometric properties of adjacent line segments, greatly improving the efficiency and effectiveness of mask layout correction.

[0024] The execution entity used in the embodiments of this application can be a terminal device with image analysis capabilities for mask patterns, such as a desktop computer or laptop computer, or a remote device, such as a server. Alternatively, the execution entity used in the embodiments of this application can also be a software entity, such as a client or software program installed on a terminal device. The execution entity used in applying the technical solutions provided in the embodiments of this application is not strictly limited here, and can be flexibly selected according to the application scenario and actual needs.

[0025] Additionally, it should be noted that this application does not impose strict limitations on the specific application scenarios corresponding to the mask layout correction method, device, storage medium, and program product provided in the embodiments of this application, and can be determined according to actual needs.

[0026] For example, in practical scenarios where mask correction is performed on mask layouts with complex designs, the technical solution provided in this application can perform precise mask rule checks on the concave and convex structural graphics in complex mask layouts, and determine the correction costs for structural thickness correction and structural width correction for non-compliant graphics respectively. When the thickness correction cost is low, thickness correction is performed on non-compliant graphics.

[0027] The technical solution provided in this application can effectively correct the concave and convex structure graphics with violations in complex mask layouts. While ensuring low correction costs, it avoids affecting other graphics in the layout through thickness correction, and there is no need to worry about the spread of the correction operation between other graphic areas. This effectively curbs the generation of new violations and significantly improves the correction speed and effect of mask layouts.

[0028] It should be noted that the application scenarios described in the above embodiments of this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided by the embodiments of this application. Those skilled in the art will understand that with the emergence of new application scenarios, the technical solutions provided by the embodiments of this application are also applicable to similar technical problems. The mask layout correction method, device, storage medium, and program product provided by the embodiments of this application can be applied to various practical scenarios requiring the correction of violations in mask layouts.

[0029] Figure 1 This is a schematic flowchart illustrating a mask layout correction method provided in one embodiment of this application.

[0030] like Figure 1 As shown, a mask layout correction method provided in one embodiment of this application includes steps S101 to S103.

[0031] S101: Based on preset mask manufacturing rules, perform mask rule checks on at least one target graphic contained in the mask layout, and identify target graphics that fail the mask rule check as non-compliant graphics.

[0032] S102: Determine the first correction cost for correcting the height of the protrusion or the depth of the depression of the non-compliant graphic, and the second correction cost for correcting the length of the protruding top segment or the depressed bottom segment of the non-compliant graphic.

[0033] S103: If the first correction cost is less than or equal to the second correction cost, correct the protrusion height or depression depth of the non-compliant graphic.

[0034] In step S101, the technical solution provided in this application embodiment can perform mask rule checks on each target graphic in the mask layout that needs to be corrected for violations, based on preset mask manufacturing rules. When a target graphic has a violation problem, that is, fails the mask rule check, it can be determined as a violation graphic that needs to be corrected.

[0035] The target graphic or violation graphic can be a raised or recessed structure graphic composed of multiple line segments in the mask pattern. Raised and recessed structure graphics refer to graphics comprising at least five sequentially connected line segments, wherein the first, third, and fifth line segments extend along the same reference straight line, and the second and fourth line segments extend perpendicularly to the reference straight line.

[0036] The difference is that, for a raised structure, the third line segment is located on one side of the line along which the first and fifth line segments meet.

[0037] For the concave structure pattern, the third line segment is located on the other side of the line along which the first and fifth line segments meet. The top line segment of the convex structure pattern is the aforementioned third line segment, and the bottom line segment of the concave structure pattern is the aforementioned third line segment. The height of the convexity or the depth of the concavity is the length of the second or fourth line segment. The length of the top line segment of the convexity or the bottom line segment of the concavity is the length of the third line segment.

[0038] For specific examples, please refer to Figures 2(a) and 2(b).

[0039] Figures 2(a) and 2(b) are schematic diagrams of the structure of a target graphic provided in one embodiment of this application.

[0040] Figure 2(a) is a schematic diagram of the target graphic being a concave structure graphic. As shown in Figure 2(a), the concave structure graphic can be composed of five line segments 211-215 in the mask pattern (as described above, the five line segments connected in sequence). Among them, the bottom concave line segment 213 (as described above, the third line segment) of the target graphic is connected to line segment 212 (as described above, the second line segment) and line segment 214 (as described above, the fourth line segment), line segment 211 (as described above, the first line segment) is connected to line segment 212, and line segment 215 (as described above, the fifth line segment) is connected to line segment 214, together forming the concave structure graphic shown in Figure 2(a).

[0041] Figure 2(b) is a schematic diagram of the target graphic as a raised structure graphic. As shown in Figure 2(b), the raised structure graphic can be composed of five line segments 221-225 in the mask pattern. Among them, the top raised line segment 223 (as the third line segment mentioned above) of the target graphic is connected to line segment 222 (as the second line segment mentioned above) and line segment 224 (as the fourth line segment mentioned above), line segment 221 (as the first line segment mentioned above) is connected to line segment 222, and line segment 225 (as the fifth line segment mentioned above) is connected to line segment 224, together forming the raised structure graphic shown in Figure 2(b).

[0042] In some embodiments, the target graphic can be determined based on the line segment combination parameters of each line segment in the mask layout. The mask rule checking process can be to detect violations in the spacing between two adjacent line segments of a raised top line segment or a recessed bottom line segment in the target graphic.

[0043] In step S102, the technical solution provided in this application embodiment can determine the correction cost under two different correction methods for the non-compliant graphic in the mask pattern, namely the first correction cost of correcting the protrusion height or depression depth of the non-compliant graphic, and the second correction cost of correcting the length of the protrusion top line segment or the depression bottom line segment of the non-compliant graphic.

[0044] The correction cost represents the degree of difference between the mask layout after correction based on the corresponding correction method and the uncorrected mask layout, i.e., the degree of difference between the corrected version of the non-compliant graphic and the non-compliant graphic itself. In some embodiments, the correction cost can be determined based on the line segment correction value corresponding to the correction method, which can also fully consider the impact of non-optimizable edges in the mask layout, i.e., fixed line segments, on the correction cost. The correction value can represent the displacement or length change of the line segment.

[0045] The depth of the depression is the length of the shortest adjacent line segment at the bottom of the depression in the depression structure pattern, such as the length of line segment 212 in Figure 2(a) above. The height of the protrusion is the length of the shortest adjacent line segment at the top of the protrusion in the protrusion structure pattern, such as the length of line segment 222 in Figure 2(b) above.

[0046] The length of the bottom recessed line segment is the width of the recessed portion in the recessed structure pattern, such as the length of the bottom recessed line segment 213 in Figure 2(a) above. The length of the top convex line segment is the width of the convex portion in the convex structure pattern, such as the length of the top convex line segment 223 in Figure 2(b) above.

[0047] In step S103, the technical solution provided in this application embodiment can compare the correction costs of two correction methods: correcting the height of the protrusion or the depth of the depression in the non-compliant graphic, and correcting the length of the top line segment of the protrusion or the bottom line segment of the depression.

[0048] When the first correction cost is determined to be less than or equal to the second correction cost, it means that correcting the height of the protrusion or the depth of the depression for the non-compliant graphic results in a smaller adjustment to the mask pattern compared to correcting the length of the top line segment of the protrusion or the bottom line segment of the depression. Furthermore, correcting the height of the protrusion or the depth of the depression will not lead to the generation of new structures or new non-compliant features.

[0049] In this case, you can choose to directly correct the protrusion height or depression depth of the non-compliant graphic in the mask pattern, because adjusting only the protrusion height or depression depth will not affect other graphic areas, so there is no need to consider the geometric changes in other graphic areas caused by the correction of non-compliant graphics.

[0050] The correction process can specifically be to eliminate the recessed part in the recessed structure pattern, for example, in Figure 2(a), the bottom line segment 213 of the recess is moved to be collinear with the line segment 211 to eliminate the recess, or to remove the protruding part in the protruding structure, for example, in Figure 2(b), the top line segment 223 of the protrusion is moved to be collinear with the line segment 221 to remove the protrusion.

[0051] The irregularities in the corrected target graphic are resolved, and because the adjustment targets the height of the bulge or the depth of the depression, it does not affect the other adjacent edges. For example, in Figure 2(a), after the depression is eliminated, line segments 211 and 215 remain consistent with the original state. Otherwise, if a more costly correction method were used to lengthen the bottom line segment of the depression, such as increasing the length of the bottom line segment 213 to resolve the irregularity, it would lead to changes in geometric parameters such as the length of line segments 211 and 215, potentially resulting in new graphic structures or irregularities.

[0052] In some embodiments, when the first correction cost is greater than the second correction cost, in order to ensure the accuracy of the overall mask layout correction and prevent new violations from occurring due to local modifications to the structural width, mask rule checks can be performed on other graphic areas in the mask layout besides the target graphic, and the check results can be determined.

[0053] Then, by combining the inspection results and the line segment correction values ​​corresponding to the second correction cost, a global graphic correction can be performed on the entire mask layout. During the global graphic correction, while correcting the concavity and convexity widths of the non-compliant graphics, the non-compliant conditions in other graphic areas of the layout are also fully considered in the inspection results. This global graphic correction aims to minimize the generation of new non-compliant issues and ensure the accuracy, effectiveness, and efficiency of the overall mask layout correction process.

[0054] In other embodiments, after the first correction cost is less than or equal to the second correction cost, and the protrusion height or indentation depth of the non-compliant graphic is corrected, mask rule checks can be performed on other graphic areas in the mask layout to determine the check results.

[0055] Since the non-compliant graphics in the target graphic have already been corrected, the non-compliant graphics areas in the mask pattern other than the target graphic can be corrected based on the inspection results, resulting in a mask pattern with overall correction.

[0056] Regarding the specific processing steps of determining the target graphic from the mask pattern in step S101 above, in the embodiments provided in this application, it is possible to determine whether the combination of multiple line segments is a concave structure or a convex structure based on the line segment geometric parameters of each line segment in the mask pattern, thereby determining the target graphic in the mask pattern.

[0057] Specifically, in this embodiment, for each line segment in the mask pattern, multiple line segments within a preset neighborhood range corresponding to that line segment can be determined. Then, based on the line segment geometry parameters of that line segment and the line segment geometry parameters of the multiple line segments within the preset neighborhood range, it is determined whether the combined line segment pattern formed by the line segment and the multiple line segments within the neighborhood of that line segment is a raised structure or a recessed structure.

[0058] A combination of line segments with raised or recessed structures can be used as the target shape in a mask pattern. The line segments are the recessed bottom segments or the raised top segments within the target shape. Specifically, the geometric parameters of the line segments may include, but are not limited to, length parameters (representing the line segment length), direction parameters (representing whether the line segment is a horizontal line segment parallel to or perpendicular to the reference horizontal direction in the mask pattern), and angle parameters (representing the angle between the line segment and the reference horizontal direction in the mask pattern).

[0059] The preset neighborhood range can specifically represent the neighborhood degree of each line segment. For example, in Figure 2(a) above, the preset neighborhood range can be the adjacent line segments in the second-degree neighborhood of each line segment, namely line segments 212 and 214 in the first-degree neighborhood of the concave bottom line segment 223, and line segments 211 and 215 in the second-degree neighborhood, which together form the target graphic of the concave structure.

[0060] It should be noted that, in the process of traversing line segments of the mask layout to determine the target graphic, the embodiments provided in this application, in order to further improve the mask correction speed, can automatically skip other line segment combinations that have not undergone the target graphic judgment process described in the above embodiments when determining that a certain line segment combination is the target graphic. This minimizes useless judgment processes for non-target graphics, improves the efficiency of target graphic determination, and enhances the overall processing efficiency of the mask correction process.

[0061] In addition, non-variable line segments can be pre-marked in the mask layout. The geometric parameters of these line segments cannot be changed in subsequent correction processes, which can provide data basis when determining the correction cost of different correction methods.

[0062] Based on the above embodiments, target graphics with concave-convex structures can be accurately identified from the mask pattern to be corrected. Through comparative analysis of geometric parameters, line segment combinations with convex-concave structures can be precisely identified, significantly improving the accuracy of target graphic identification. This embodiment provides accurate inspection targets for subsequent mask rule checking processes, further improving the correction speed and accuracy of the mask correction process.

[0063] Regarding the mask rule checking process for the target graphic in step S101 above, in the embodiments provided in this application, after determining the target graphic from the mask layout based on the above embodiments, mask rule checking can be performed on the adjacent line segments of the raised top line segment or the recessed bottom line segment in the target graphic to determine whether the target graphic is a non-compliant graphic.

[0064] The specific mask rule check for adjacent line segments can be based on the line segment spacing constraints in the preset mask manufacturing rules to determine whether the spacing between two adjacent line segments of a raised top line segment or a recessed bottom line segment violates the rules, that is, to determine whether there is an edge-to-edge violation (E2E) in the target graphic.

[0065] If the spacing between two adjacent line segments does not meet the line segment spacing constraint in the preset mask manufacturing rules, the target graphic is determined to be a non-compliant graphic that needs correction. Taking Figure 2(a) as an example, the bottom line segment 213 of the recessed structure in the target graphic shown in Figure 2(a) is the recessed structure, and the corresponding adjacent line segments are line segments 212 and 214. When the spacing between line segments 212 and 214 in Figure 2(a) does not meet the line segment spacing constraint in the preset mask manufacturing rules, the target graphic shown in Figure 2(a) is determined to be a non-compliant graphic. Similarly, in Figure 2(b), if the spacing between line segments 222 and 224 does not meet the line segment spacing constraint, the target graphic shown in Figure 2(b) is determined to be a non-compliant graphic.

[0066] Based on the above embodiments, precise and effective edge-to-edge violation detection can be performed on each target graphic in the mask layout, accurately identifying the non-compliant graphics that require correction. This embodiment provides accurate and effective correction targets for the subsequent mask correction process, significantly improving the correction efficiency and effect of the mask layout.

[0067] Regarding the specific determination process of the first correction cost and the second correction cost in the above step S102, it can be calculated and determined based on the actual line segment correction value of the corresponding correction method.

[0068] The principle behind adjusting the height of a protrusion or the depth of a depression is that for two line segments with edge-to-edge violations, eliminating the shorter side resolves the violation. The principle behind adjusting the length of the top line segment of a protrusion or the bottom line segment of a depression is to adjust the spacing between the two line segments with edge-to-edge violations, thereby eliminating the violation.

[0069] Specifically, for adjusting the height of a protrusion or the depth of a depression, the height of the protrusion of the protrusion structure or the depth of the depression structure in the target graphic can be used as the correction value for this correction method.

[0070] Taking Figure 2(a) above as an example, assuming that the target graphic shown in Figure 2(a) is a non-compliant graphic, and the spacing between line segment 212 and line segment 214 is non-compliant, the corresponding correction of the depression depth is to translate the bottom line segment 213 of the depression to line segment 211, and the translation distance is the length of line segment 212, i.e. the first correction value.

[0071] To correct the length of the raised top segment or the recessed bottom segment, the segment spacing constraint in the preset mask manufacturing rules can be determined first. Then, based on the width of the irregular shape (i.e., the length of the raised top segment or the recessed bottom segment) and the segment spacing constraint, the length adjustment value required for the irregular shape to meet the segment spacing constraint can be calculated as the correction value for this correction method. Specifically, the correction value represents the change in length of the raised top segment or the recessed bottom segment when correcting the length of the irregular shape, or the sum of the displacements of two adjacent segments of the raised top segment or the recessed bottom segment. In this correction method, displacement refers to the distance moved by two adjacent segments in the direction away from each other.

[0072] Taking Figure 2(a) as an example again, assuming that the target graphic shown in Figure 2(a) is a non-compliant graphic, and the spacing between line segment 212 and line segment 214 is non-compliant, the length correction of the concave bottom line segment 213 is to translate line segment 212 and line segment 214 away from each other, so that the spacing between them (that is, the length of the concave bottom line segment 213) increases, and the spacing increment is the aforementioned correction value.

[0073] Furthermore, based on the correction values ​​corresponding to the two correction methods, the first correction cost and the second correction cost can be calculated. In some embodiments, the correction cost is the square or sum of squares of the correction value. The square or sum of squares of the correction value can characterize the change in the area of ​​the graphic before and after the correction. Compared with the correction value itself, it can further highlight the degree of influence of the two correction methods on the area of ​​the mask pattern, so that when selecting a correction method based on the correction cost, a correction method that can solve the violation problem and minimize the change in the mask pattern after correction can be selected.

[0074] Based on the above embodiments, the correction costs of the two correction methods corresponding to the non-compliant graphic can be accurately determined. The cost difference can be accurately predicted before the actual correction operation. Furthermore, cost comparison visualization can be achieved, providing accurate reference data for the selection of subsequent correction methods and further improving the correction accuracy and efficiency of the mask pattern.

[0075] Regarding the specific determination process of the correction cost in step S102 in the above embodiments, in the embodiments provided in this application, the correction cost of different correction methods can be determined by calculating the square of the correction value, and the influence of fixed line segments in the mask layout, i.e., non-optimizable line segments, is fully considered in the determination process.

[0076] It should be noted in advance that in some embodiments, the non-adjustable line segment not only affects the determination of the second correction value, but also affects the selection of the actual correction method. For example, when the edge in the second-degree domain of the concave bottom line segment or the convex top line segment in the violation graphic (e.g., line segment 211 or line segment 215 in Figure 2(a)) is a non-adjustable line segment in the fixed line segment information, it means that this kind of violation graphic cannot be corrected by adjusting the length of the convex top line segment or the concave bottom line segment, otherwise it will change the geometric properties of the non-adjustable line segment. Only the convex height or concave depth can be corrected, that is, the violation can be eliminated without affecting the geometric properties of the non-adjustable edge.

[0077] In some embodiments, non-adjustable line segments can be further categorized into non-adjustable position, non-adjustable length, and non-adjustable position and length, depending on actual design requirements. When a non-adjustable line segment appears in a non-compliant graphic, such as two adjacent sides of a recessed bottom line segment or a raised top line segment (e.g., line segments 212 and 214 in Figure 2(a)), the two adjacent sides cannot move, thus preventing length correction and structural width changes for the recessed bottom line segment or the raised top line segment, i.e., the correction method corresponding to the second correction cost cannot be selected. However, the length of the two adjacent sides can be adjusted, allowing for adjustment of the recess depth or the raised width, i.e., the correction method corresponding to the first correction cost.

[0078] When a non-compliant graphic contains line segments whose length cannot be adjusted, let's take two adjacent sides of a concave bottom line segment or a convex top line segment as an example. In this case, the length of the two adjacent sides cannot be adjusted, meaning that the depth of the concavity or the width of the convexity cannot be adjusted, and therefore the correction method corresponding to the first correction cost cannot be selected. However, the position of the two adjacent sides can be moved, so the length of the concave bottom line segment or the convex top line segment can be adjusted, which is the correction method corresponding to the second correction cost.

[0079] When a non-compliant graphic contains line segments whose position and length are both non-adjustable, consider two or one adjacent edge of a concave bottom line segment or a convex top line segment as an example. In this case, if the position and length of one adjacent edge cannot be adjusted, adjusting the depth of the concavity or the width of the convexity, or adjusting the length of the concave bottom line segment or the convex top line segment, is not feasible. Therefore, it is impossible to choose the repair method corresponding to the first or second correction cost to address the non-compliant issue.

[0080] Therefore, for non-compliant graphics corrected using the technical solutions provided in this application, the correction method needs to be flexibly selected based on the non-adjustable line segments and the specific type of non-adjustability. In the embodiments provided in this application, for correction methods that adjust the height of protrusions or the depth of depressions, since only the bottom line segment of the depression or the top line segment of the protrusion changes position during actual correction, the square of the displacement of the bottom line segment of the depression or the top line segment of the protrusion, i.e., the square of the correction value in the above embodiments, can be used as the first correction cost representing the difference in layout before and after the correction of the height of protrusions or the depth of depression.

[0081] Regarding the correction method for adjusting the length of the raised top segment or the recessed bottom segment, the aforementioned non-adjustable segment can be used to determine the displacement of the adjacent side of the recessed bottom segment or the raised top segment of the non-compliant graphic as a correction value during the process of determining the second correction cost. In this embodiment, the non-adjustable segment refers to the segment whose length is adjustable but whose position is not adjustable in the above example.

[0082] Taking Figure 2(a) above as an example, when it is determined, based on the fixed line segment information, that neither of the two adjacent line segments 212 and 214 of the recessed bottom line segment 213 are the aforementioned non-adjustable line segments, line segment 212 and line segment 214 can each correspond to a displacement, and the sum of the values ​​is equal to the correction value in the above embodiment, i.e., the length adjustment value. Specifically, it can be determined based on a preset ratio, such as half the length adjustment value or other preset ratios, such as 30% and 70% of the length adjustment value, or 40% and 60% of the length adjustment value, etc. The specific choice can be made flexibly according to actual needs and application scenarios.

[0083] When, based on fixed line segment information, one of the two adjacent line segments 212 and 214 of the concave bottom line segment 213 is determined to be a non-adjustable line segment (e.g., line segment 212 is non-adjustable), the geometric properties of line segment 212 cannot be affected by the correction process. To correct the length of the concave bottom line segment, only the other adjacent side, line segment 214, can be translated. Therefore, in this case, the displacement corresponding to line segment 212 is zero, while the displacement corresponding to line segment 214 is equal to the length adjustment value.

[0084] Regardless of whether the violation pattern corresponding to the second correction cost determination process is any of the cases in the above examples, the second correction cost can be determined by calculating the sum of the squares of the displacements corresponding to two adjacent segments of the raised top segment or the concave bottom segment.

[0085] When neither of the two adjacent line segments is an adjustable segment, the second correction cost is the sum of the squares of the two displacements after the length adjustment value is divided equally or proportionally. When one of the two adjacent line segments is an adjustable segment, the displacement of one adjacent line segment is equal to the length adjustment value, while the displacement of the other is zero. In this case, the second correction cost is equal to the square of the length adjustment value.

[0086] Based on the above embodiments, the correction costs for different correction processes on non-compliant graphics can be accurately determined, and the influence of non-optimizable line segments is fully considered, significantly improving the accuracy and reliability of the correction cost determination. This embodiment can provide an accurate and effective reference for subsequent correction method selection steps, enabling more precise selection of whether to perform bump thickness correction with a small impact on the layout, effectively improving the correction effect and efficiency of the mask layout.

[0087] In addition to step S103 above, in one embodiment provided in this application, when the first correction cost is greater than the second correction cost, in this case, the difference in layout before and after correction caused by length correction of the raised top line segment or the recessed bottom line segment is less than the difference in layout before and after correction caused by correction of the raised height or the recessed depth. Therefore, length correction should be performed on the raised top line segment or the recessed bottom line segment of the non-compliant graphic.

[0088] However, in order to prevent changes in the geometric properties of other graphic areas caused by directly modifying the structural width of the non-compliant graphic, the length modification process for the protruding top line segment or the concave bottom line segment of the non-compliant graphic can be placed in the global non-compliant correction of the mask layout. This fully considers the impact of structural width modification on other graphic areas and avoids the emergence of new non-compliant issues as much as possible.

[0089] Specifically, if the first correction cost is greater than the second correction cost, mask rule checks can be performed on other graphic regions in the mask layout besides the target graphic, and the corresponding check results can be determined. The check results can indicate the violations in other graphic regions, serving as a reference basis for subsequent global processes.

[0090] Then, based on the second correction cost in the above embodiments and the inspection results obtained from the global mask rule check, a global graphic correction can be performed on the mask layout.

[0091] Specifically, in the embodiments provided in this application, global graphic correction can be based on preset mask manufacturing rules to globally search for locations on the mask layout where there are violations other than the target graphic. Then, the correction weight of each violation line segment is determined according to a preset weight calculation method. The correction value that resolves the corresponding violation is allocated and determined according to the correction weight. In the actual correction process, the correction value is applied to the corresponding violation line segment.

[0092] During the global correction process, for irregular graphics requiring length correction of raised top segments or recessed bottom segments, two adjacent segments of either segment can be identified as irregular segments. Based on the irregularity of these adjacent segments, their weight in the aforementioned length adjustment value can be determined, serving as the correction weight. In actual global correction, the displacement of the two irregular segments in the irregular graphic can be determined based on the correction weight and length adjustment value. Adjusting the graphic based on this displacement eliminates the irregularity.

[0093] When correcting the structural width of a target graphic with violations in a mask layout, in addition to the second correction cost and length adjustment value, it is also necessary to fully consider the violations in the graphic areas adjacent to the target graphic in the inspection results, and to avoid new violations in the graphic areas adjacent to the target graphic due to length correction of the protruding top line segment or the concave bottom line segment of the violation graphic.

[0094] Based on the above embodiments, the mask layout can be effectively corrected as a whole. When adjusting the concave and convex widths of non-compliant patterns, the geometric impact on the surrounding pattern areas is fully considered, effectively reducing the possibility of new non-compliant issues arising from the adjustment of the concave and convex widths. This fully ensures the correction effect of the mask layout and the practicality of the corrected mask layout, further accelerating chip production speed and yield.

[0095] Following step S103 above, in one embodiment provided in this application, for a mask layout after at least some of the non-compliant graphics have been corrected for protrusion height or depression depth, mask rule checks can be performed on other graphic areas besides the target graphic, and the check results can be determined.

[0096] Then, based on the inspection results, graphic corrections can be performed on other graphic areas in the mask layout except for the target graphic to obtain the mask layout after overall correction. Since the non-compliant graphics in the target graphic have all been corrected for the protrusion height or depression depth in the above steps, the above mask rule inspection and correction process can be skipped in the global correction process here.

[0097] It should be noted that whether correcting the protrusion height or depression depth of the non-compliant graphics or performing global detection and correction on the mask layout, the actual correction must be based on the minimum optimized side length preset during the mask layout correction process. That is, the actual adjustment of the line segment length cannot be less than the minimum optimized side length. Other preset conditions during the mask layout correction process must also be considered. The embodiments provided in this application do not strictly limit the preset conditions during the mask layout correction process, and can be flexibly selected according to actual needs and application scenarios.

[0098] Based on the above embodiments, after eliminating violations in the mask layout by correcting the protrusion height or recess depth, accurate and effective global violation correction can be performed on the mask layout, ensuring the overall correction effect of the mask layout. Furthermore, in this embodiment, since violations in the target graphic are resolved by correcting the protrusion height or recess depth, violation detection and correction of the target graphic can be skipped during global correction, significantly improving the overall correction rate for the mask layout. Simultaneously, because the protrusion height or recess depth correction effectively avoids the generation of new violations, the number of correction iterations for the mask layout is greatly reduced, and the layout correction accuracy is improved.

[0099] The following two actual layout optimization examples illustrate the comparison between the mask layout correction method provided in this application and the traditional concave-convex width adjustment method. For details, please refer to Figures 3(a) and 3(b).

[0100] Figures 3(a) and 3(b) are schematic diagrams illustrating an example of mask pattern correction provided in one embodiment of this application.

[0101] Figure 3(a) shows an example of a mask layout before and after modification according to an embodiment of this application. As shown in Figure 3(a), a mask layout has some mask patterns 311 and mask patterns 312 distributed on it. In the mask pattern 312, there is a target pattern 313 with a raised structure, and two adjacent line segments of the raised top line segment in the target pattern 313 have an edge-to-edge violation 314.

[0102] In Figure 3(a), the corrected contour 315 is the contour after the structural width of the target graphic 313 is directly corrected. Although it solves the edge-to-edge violation 314, it adds an edge-to-edge violation 316 between the mask graphic 312 and the mask graphic 311, that is, a new violation problem occurs.

[0103] In Figure 3(a), the corrected contour 317 is the contour after the target graphic 313 is corrected for the height of the protrusion based on the technical solution provided in this application. It can be clearly seen that the original protrusion is eliminated, the edge-to-edge violation 314 also disappears, and no new graphic or new violation problem appears.

[0104] Figure 3(b) shows another example of a mask layout before and after modification according to an embodiment of this application. As shown in Figure 3(b), a mask layout has a portion of mask patterns 321. In the mask pattern 321, there is a target pattern 322 that is a recessed structure pattern, and two adjacent line segments of the recessed bottom line segment in the target pattern 322 have an edge-to-edge violation 323.

[0105] In Figure 3(b), the corrected contour 324 is the contour after the structural width of the target graphic 322 is directly corrected. Although it solves the edge-to-edge violation 323, it adds edge-to-edge violation 325 and corner-to-corner violation 326 to the mask graphic 321, that is, new violation problems occur.

[0106] In Figure 3(b), the corrected contour 327 is the contour after the concavity depth of the target graphic 322 is corrected based on the technical solution provided in this application. It can be seen that the original concave part is filled in, and the edge-to-edge violation 323 disappears accordingly. No new graphic or new violation problem appears.

[0107] To further understand, the mask layout correction method provided in this application will be described in general, based on the above embodiments. For details, please refer to... Figure 4 As shown.

[0108] Figure 4 This is a schematic flowchart illustrating a wafer image correction method according to one embodiment of this application. Figure 4 As shown, it includes steps S401-S407.

[0109] S401: Based on the line segment geometry parameters, determine whether the target graphic in the mask pattern to be corrected is a raised or recessed structure.

[0110] S402: Based on the preset mask manufacturing rules, perform mask rule checks on the target graphic to determine the existence of non-compliant graphics with edge-to-edge violations.

[0111] S403: Determine the correction value for correcting the height of the bump or the depth of the depression in the non-compliant graphic, and the second correction value for correcting the length of the top line segment of the bump or the bottom line segment of the depression in the non-compliant graphic.

[0112] S404: Based on the first correction value, determine the first correction cost for correcting the height of the bulge or the depth of the depression, and based on the second correction value, determine the second correction cost for correcting the length of the top segment of the bulge or the bottom segment of the depression.

[0113] S405: Determine the relationship between the first correction cost and the second correction cost.

[0114] S406: If the first correction cost is less than or equal to the second correction cost, the protrusion height or indentation depth of the non-compliant graphic is corrected based on the first correction value, and after correction, mask rule checks and non-compliance corrections are performed on other graphic areas in the mask layout except for the target graphic to obtain the corrected mask layout.

[0115] S407: If the first correction cost is greater than the second correction cost, perform mask rule checks on other graphic regions in the mask layout except for the target graphic. Based on the check results and the second correction value, perform global violation correction on the mask layout to obtain the corrected mask layout.

[0116] Through steps S401 to S407 described above, efficient and high-precision violation correction of the mask layout can be achieved, allowing for flexible selection of low-cost correction methods and minimizing the generation of new violation problems caused by pattern correction. Specific implementation methods and technical details can be found in the above embodiments, and will not be elaborated further here.

[0117] The above describes the specific implementation of the mask pattern correction method provided in this application embodiment. The technical solution provided in this application embodiment can accurately and effectively correct the concave and convex structure graphics with irregularities in the mask pattern.

[0118] In the technical solution provided in this application, the thickness correction method is selected for violation correction by comparing the correction costs of different correction methods. This ensures that the difference between the corrected pattern and the original mask layout is minimal, while the correction of bump height or recess depth can also avoid creating new pattern structures due to the deformation of other line segments. This effectively eliminates the chain reaction caused by edge movement and the interference with the geometric properties of adjacent line segments, greatly improving the correction efficiency and effect of the mask layout, thereby significantly improving subsequent chip production efficiency and quality.

[0119] Based on the mask layout correction method provided in the above embodiments, this application also provides specific implementation methods of the mask layout correction device, please refer to the following embodiments.

[0120] Figure 5 A schematic diagram of a mask layout correction device provided in another embodiment of this application. The mask layout correction device 500 includes: The rule checking unit 501 is used to perform mask rule checking on at least one target graphic contained in the mask layout based on preset mask manufacturing rules, and to regard the target graphic that fails the mask rule check as a violation graphic. The target graphic is a raised structure graphic or a recessed structure graphic. Cost determination unit 502 is used to determine a first correction cost for correcting the height of the protrusion or the depth of the depression of the non-compliant graphic, and a second correction cost for correcting the length of the top line segment of the protrusion or the bottom line segment of the depression of the non-compliant graphic. The first correction cost or the second correction cost represents the degree of difference between the non-compliant graphic before and after correction. The layout correction unit 503 is used to correct the protrusion height or depression depth of the non-compliant graphic when the first correction cost is less than or equal to the second correction cost.

[0121] In some embodiments, the cost determination unit 502 described above is specifically used for: The square of the convex height or concave depth is used as the first correction cost, where the convex height is the length of the shortest adjacent side of the convex top segment and the concave depth is the length of the shortest adjacent side of the concave bottom segment.

[0122] In some embodiments, the cost determination unit 502 described above is specifically used for: Determine the line segment spacing constraints in the preset mask manufacturing rules; Determine the length adjustment value that ensures the length of the raised top segment or the recessed bottom segment meets the segment spacing constraint condition; Determine whether the two adjacent sides of a raised top line segment or a recessed bottom line segment are non-adjustable line segments. Non-adjustable line segments are line segments whose position cannot be adjusted. If one of the adjacent sides is a non-adjustable line segment, then the displacement of that adjacent side is determined to be zero, and the displacement of the other adjacent side is the length adjustment value; If both adjacent sides are adjustable line segments, the displacements corresponding to the two adjacent sides are calculated based on the preset ratio and length adjustment value. The sum of the squares of the displacements of the two adjacent sides is used as the second correction cost.

[0123] In some embodiments, the layout correction unit 503 described above is specifically used for: If the first correction cost is determined to be greater than the second correction cost, mask rule checks are performed on other graphic areas in the mask layout except for the target graphic, and the check results are determined. Based on the inspection results and the second correction cost, determine the correction weights corresponding to the two adjacent segments of the raised top segment or the recessed bottom segment. Based on the corrected weights, the displacement of two adjacent line segments is determined, and the length of the target graphic is corrected based on the displacement.

[0124] In some embodiments, the layout correction unit 503 is specifically used for: Perform mask rule checks on other graphic regions in the mask layout, excluding the target graphic, and determine the check results; Based on the inspection results, graphic corrections were made to other graphic areas.

[0125] In some embodiments, the rule checking unit 501 described above is specifically used for: The target graphic in the mask pattern is determined based on the line segment geometric parameters of multiple line segments in the mask pattern. Determine whether the line segment spacing between two adjacent line segments of a raised top line segment or a recessed bottom line segment in the target graphic conforms to the preset mask manufacturing rules; If not, the target graphic is determined to be a violation graphic.

[0126] In some embodiments, the rule checking unit 501 described above is specifically used for: For each line segment, based on the line segment geometric parameters of the line segment and multiple adjacent line segments within the preset neighborhood of the line segment, it is determined whether the line segment combination graphic of the line segment is a convex structure or a concave structure. The line segment combination graphic is a multi-line segment graphic composed of the line segment and multiple adjacent line segments. If so, determine the line segment combination shape as the target shape.

[0127] Figure 6 This is a schematic diagram of the hardware structure of a mask layout correction device provided in yet another embodiment of this application.

[0128] The mask layout correction device may include a processor 601 and a memory 602 storing computer program instructions.

[0129] Specifically, the processor 601 may include a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits that can be configured to implement the embodiments of this application.

[0130] Memory 602 may include mass storage for data or instructions. For example, and not limitingly, memory 602 may include a hard disk drive (HDD), floppy disk drive, flash memory, optical disk, magneto-optical disk, magnetic tape, or Universal Serial Bus (USB) drive, or a combination of two or more of these. Where appropriate, memory 602 may include removable or non-removable (or fixed) media. Where appropriate, memory 602 may be internal or external to the integrated gateway disaster recovery device. In a particular embodiment, memory 602 is non-volatile solid-state memory.

[0131] In a particular embodiment, memory 602 includes read-only memory (ROM). Where appropriate, the ROM may be a mask-programmed ROM, a programmable ROM (PROM), an erasable PROM (EPROM), an electrically erasable PROM (EEPROM), an electrically rewritable ROM (EAROM), or flash memory, or a combination of two or more of these.

[0132] The processor 601 implements any of the mask layout correction methods in the above embodiments by reading and executing computer program instructions stored in the memory 602.

[0133] In one example, the mask layout correction device may further include a communication interface 603 and a bus 610. Wherein, as Figure 6 As shown, the processor 601, memory 602, and communication interface 603 are connected through bus 610 and complete communication with each other.

[0134] The communication interface 603 is mainly used to realize communication between various modules, devices, units and / or equipment in the embodiments of this application.

[0135] Bus 610 includes hardware, software, or both, that couples components of an online data traffic metering device together. For example, and not limitingly, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an Infinite Bandwidth Interconnect, a Low Pin Count (LPC) bus, a memory bus, a Microchannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses, or combinations of two or more of these. Where appropriate, bus 610 may include one or more buses. Although specific buses are described and illustrated in embodiments of this application, any suitable bus or interconnect is contemplated herein.

[0136] Furthermore, in conjunction with the mask layout correction methods in the above embodiments, this application embodiment can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions; when these computer program instructions are executed by a processor, they implement any one of the mask layout correction methods in the above embodiments.

[0137] This application also provides a computer program product, including a computer program, which, when executed, implements any of the mask layout correction methods described in the above embodiments.

[0138] It should be clarified that this application is not limited to the specific configurations and processes described above and shown in the figures. For the sake of brevity, detailed descriptions of known methods are omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of this application is not limited to the specific steps described and shown. Those skilled in the art can make various changes, modifications, and additions, or change the order of steps, after understanding the spirit of this application.

[0139] The functional blocks shown in the above-described structural diagram can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they can be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, etc. When implemented in software, the elements of this application are programs or code segments used to perform the required tasks. Programs or code segments can be stored on a machine-readable medium or transmitted over a transmission medium or communication link via data signals carried on a carrier wave. "Machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio frequency (RF) links, etc. Code segments can be downloaded via computer networks such as the Internet, intranets, etc.

[0140] It should also be noted that the exemplary embodiments mentioned in this application describe methods or systems based on a series of steps or apparatus. However, this application is not limited to the order of the above steps; that is, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0141] The aspects of this disclosure have been described above with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this disclosure. It should be understood that each block in the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing apparatus to produce a machine such that these instructions, executable via the processor of the computer or other programmable data processing apparatus, enable the implementation of the functions / actions specified in one or more blocks of the flowchart illustrations and / or block diagrams. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field-programmable logic circuit. It is also understood that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can also be implemented by special-purpose hardware performing the specified functions or actions, or can be implemented by a combination of special-purpose hardware and computer instructions.

[0142] The above description is merely a specific implementation of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

Claims

1. A reticle map correction method, characterized by, The method comprises the following steps: performing mask rule checking on at least one target pattern contained in a mask layout based on preset mask manufacturing rules, and taking the target pattern that fails to pass the mask rule checking as a rule violation pattern, the target pattern being a protruding structure pattern or a recessed structure pattern; determining a first correction cost for correcting the protruding height or the recessed depth of the rule violation pattern, and a second correction cost for length correction of the protruding top line segment or the recessed bottom line segment of the rule violation pattern, the first correction cost or the second correction cost representing the difference degree before and after correction of the rule violation pattern; correcting the protruding height or the recessed depth of the rule violation pattern when the first correction cost is less than or equal to the second correction cost.

2. The method of claim 1, wherein, The method for determining the first correction cost for correcting the protruding height or the recessed depth of the rule violation pattern comprises the following steps: taking the square of the protruding height or the recessed depth as the first correction cost, the protruding height being the length of the shortest adjacent side of the protruding top line segment, and the recessed depth being the length of the shortest adjacent side of the recessed bottom line segment.

3. The method of claim 1, wherein, The method for determining the second correction cost for length correction of the protruding top line segment or the recessed bottom line segment of the rule violation pattern comprises the following steps: determining a line segment spacing constraint condition in the preset mask manufacturing rules; determining a length adjustment value that makes the length of the protruding top line segment or the recessed bottom line segment satisfy the line segment spacing constraint condition; judging whether two adjacent sides of the protruding top line segment or the recessed bottom line segment are unadjustable sides, the unadjustable side representing a line segment whose position cannot be adjusted; if one of the two adjacent sides is an unadjustable side, determining that the displacement of the unadjustable side is zero and the displacement of the other side is the length adjustment value; if both of the two adjacent sides are adjustable sides, calculating the displacements of the two adjacent sides respectively based on a preset ratio and the length adjustment value; taking the sum of the squares of the displacements of the two adjacent sides as the second correction cost.

4. The method of claim 1, wherein, After the first correction cost for correcting the protruding height or the recessed depth of the rule violation pattern and the second correction cost for length correction of the protruding top line segment or the recessed bottom line segment of the rule violation pattern are determined, the method further comprises the following steps: performing mask rule checking on other pattern regions in the mask layout except the target pattern to determine a checking result when it is determined that the first correction cost is greater than the second correction cost; determining correction weights corresponding to two adjacent line segments of the protruding top line segment or the recessed bottom line segment based on the checking result and the second correction cost; determining the displacements of the two adjacent line segments based on the correction weights, and performing length correction on the target pattern based on the displacements.

5. The method of claim 1, wherein, After the protruding height or the recessed depth of the rule violation pattern is corrected, the method further comprises the following steps: performing mask rule checking on other pattern regions in the mask layout except the target pattern to determine a checking result; performing pattern correction on the other pattern regions based on the checking result.

6. The method of claim 1, wherein, The method comprises: performing mask rule checking on at least one target pattern contained in a mask layout based on a preset mask manufacturing rule, and regarding the target pattern that fails to pass the mask rule checking as a rule violation pattern, which comprises: Determining a target pattern in the mask layout according to line segment geometric parameters of a plurality of line segments in the mask layout; Determining whether a line segment spacing between two adjacent line segments of the protruding top line segment or the recess bottom line segment in the target pattern conforms to the preset mask manufacturing rule; If not, determining that the target pattern is the rule violation pattern.

7. The method of claim 6, wherein, The method comprises: For each line segment, determining whether a line segment combination pattern of the line segment is a protruding structure or a recess structure according to line segment geometric parameters of the line segment and a plurality of adjacent line segments within a preset neighborhood range of the line segment, the line segment combination pattern being a multi-line segment pattern composed of the line segment and the plurality of adjacent line segments; If yes, determining that the line segment combination pattern of the line segment is the target pattern.

8. An electronic device, comprising: The device comprises a processor and a memory storing computer program instructions; The processor executes the computer program instructions to implement the mask layout correction method according to any one of claims 1-7.

9. A computer-readable storage medium, characterized in that, The computer readable storage medium stores computer program instructions, and the computer program instructions are executed by the processor to implement the mask layout correction method according to any one of claims 1-7.

10. A computer program product, characterised in that, The instructions in the computer program product are executed by the processor of the electronic device to enable the electronic device to perform the mask layout correction method according to any one of claims 1-7.

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