A patterned material and undercoat composition for a substrate, its use and a device

Abstract

The application provides a patterning material and substrate interlayer composition, application and device thereof, and the composition comprises a main resin A, a main resin B, a thermal acid generator and a solvent; the acid dissociation constant pKa of the conjugated acid corresponding to the anion in the thermal acid generator is lower than -3; the main resin A and the main resin B both contain crosslinkable groups and are crosslinked at 150-300 DEG C; and the molar ratio of the crosslinkable groups in the main resin A to the crosslinkable groups in the main resin B is 1:0.6-1.3. In the application, the main resin A and the main resin B control the molar ratio of the crosslinkable groups in the two resins under the thermal acid generator and at 150-300 DEG C, realize a high crosslinking state, avoid the falling phenomenon of the upper patterning material, and can form a strong crosslinking structure on various substrates and are suitable for use.

Description

Technical Field

[0001] This invention belongs to the field of patterned material underlayer film technology, and particularly relates to a patterned material and substrate intermediate coating composition, its application and device. Background Technology

[0002] In semiconductor manufacturing, patterned substrate intermediate coating is a material located between the patterned material and the substrate that can effectively eliminate light reflection from the substrate and form interference standing waves.

[0003] As semiconductor device manufacturing scenarios become increasingly diverse and substrate types increase, anti-reflective coating materials need to possess greater substrate applicability, meaning they must be able to fully cross-link on the substrate to form a flat and uniform thin film coating. Whether the patterning material and the intermediate coating on the substrate are fully cross-linked directly affects the accuracy of the upper pattern. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a patterned material and substrate intermediate coating composition, the application of the composition and the device thereof, which can achieve a highly cross-linked state, avoid the problem of upper patterned material falling off, and exhibit excellent substrate applicability.

[0005] This invention provides a patterned material and substrate intermediate coating composition, comprising a main resin A, a main resin B, a thermogenic acid-producing agent, and a solvent;

[0006] The acid dissociation constant pKa of the conjugate acid corresponding to the anion in the thermogenic acid-producing agent is less than -3;

[0007] Both the main resin A and the main resin B contain crosslinkable groups and are crosslinked at 150~300℃;

[0008] The molar ratio of crosslinkable groups in the main resin A to crosslinkable groups in the main resin B is 1:0.6~1.3.

[0009] Preferably, the content of the main resin A is 0.5~10wt%, the content of the main resin B is 0.5~20wt%, the content of the thermogenic acid-producing agent is 0.1~1wt%, and the balance is solvent.

[0010] Preferably, the crosslinkable groups in the main resin A are selected from one or more of hydroxyl, phenolic hydroxyl, carboxyl, mercapto, amino groups without aromatic rings, sulfonate and phosphate groups;

[0011] The crosslinkable groups in the main resin B are epoxy functional groups.

[0012] Preferably, the molar ratio of crosslinkable groups in main resin A to epoxy functional groups in main resin B is 1:0.7~1.0;

[0013] The weight-average molecular weights of both main resin A and main resin B are 4,000 to 40,000 Daltons, and their molecular weight distributions are 1.2 to 3.2.

[0014] Preferably, the weight-average molecular weight of the main resin A is 15,000 to 30,000 Daltons, and the molecular weight distribution is 1.5 to 2.2.

[0015] The main resin B has a weight-average molecular weight of 4,000 to 10,000 Daltons and a molecular weight distribution of 1.2 to 1.8.

[0016] Preferably, the main resin A has the structure of Formula I:

[0017] Formula I;

[0018] In Formula I, R 1 R 2 and R 3 Independently selected from -H or straight-chain or branched alkyl groups containing 1 to 5 carbon atoms;

[0019] R1, R2, and R3 are independently selected from ester, ether, amide, ketyl, or straight-chain or branched alkylene groups containing one or more of ester, ether, amide, or ketyl groups; the number of carbon atoms in the alkylene group is 1 to 5.

[0020] R4 is a phenyl group containing 6 to 30 carbon atoms, its derivatives, naphthalene group, biphenyl group, or terphenyl group.

[0021] The R5 is a hydroxyl group, phenolic hydroxyl group, carboxyl group, mercapto group, sulfonic acid group, phosphoric acid group, or an amino group that does not contain an aromatic ring;

[0022] R6 is a heterocyclic alkyl or alkyl group;

[0023] a and c are greater than or equal to 0, and b is greater than 0;

[0024] The main resin B has a structure of formula II:

[0025] Formula II;

[0026] In Formula II, R 1 and R 2 Independently selected from -H or straight-chain or branched alkyl groups containing 1 to 5 carbon atoms;

[0027] The R1 is selected from -H, ester group, ether group, amide group, ketone alkyl group, or a straight-chain or branched alkyl group containing one or more of ester group, ether group, amide group, and ketone alkyl group.

[0028] The R2 is selected from ester group, ether group, amide group, ketone alkyl group, or a straight-chain or branched alkylene group containing one or more of ester group, ether group, amide group, and ketone alkyl group, wherein the number of carbon atoms in the alkylene group is 1 to 5.

[0029] R3 is an epoxy group;

[0030] Where n > 0.

[0031] Preferably, the thermogenic acid-producing agent is selected from fluorine-containing sulfonates or their corresponding conjugate acids.

[0032] Preferably, the fluorinated sulfonate is selected from triethylamine trifluoromethanesulfonate, phthalimino trifluoromethanesulfonate, naphthylimino trifluoromethanesulfonate, diphenyliodotrifluoromethanesulfonate, diphenyliodoperfluorobutyl sulfonate, diphenyl-p-methoxyphenylsulfonate, diphenyl-p-toluenesulfonate, diphenyl-p-tert-butylphenylsulfonate, diphenyl-p-isobutylphenylsulfonate, triphenylsulfonate, and diphenyl-p-isobutylphenylsulfonate. At least one of the following: methoxyphenylsulfonium perfluorobutyl sulfonate, diphenyl-p-tolylsulfonium perfluorobutyl sulfonate, diphenyl-p-tert-butylphenylsulfonium perfluorobutyl sulfonate, diphenyl-p-isobutylphenylsulfonium perfluorobutyl sulfonate, triphenylsulfonium perfluorobutyl sulfonate, tri-p-tert-butylphenylsulfonium perfluorobutyl sulfonate, ammonium perfluorohexyl sulfonate, potassium perfluoroheptyl sulfonate, sodium perfluoropentane sulfonate, potassium perfluorohexane sulfonate, potassium perfluorooctyl sulfonate, and dibutylnaphthylsulfonium trifluoromethanesulfonate;

[0033] In this invention, the conjugate acid corresponding to the anion in the fluorinated sulfonate is selected from at least one of trifluoromethanesulfonic acid, perfluorobutylsulfonic acid, perfluorohexylsulfonic acid, perfluoroheptylsulfonic acid, perfluoropentanesulfonic acid, perfluorohexanesulfonic acid, and perfluorooctylsulfonic acid.

[0034] This invention provides the application of the patterning material and substrate intermediate coating composition described above on a patterned substrate;

[0035] The patterned substrate is selected from SiO2, Cu, Co, W, Si3N4, SiOC, SiCN, Al2O3 or TiN.

[0036] The present invention also provides a device prepared using the patterned material and substrate intermediate coating composition described above.

[0037] This invention provides a patterned material and a substrate intermediate coating composition, comprising a main resin A, a main resin B, a thermogenic acid-producing agent, and a solvent; the conjugate acid corresponding to the anion in the thermogenic acid-producing agent has an acid dissociation constant pKa below -3; both main resin A and main resin B contain crosslinkable groups and are crosslinked at 150~300℃; the molar ratio of crosslinkable groups in main resin A to crosslinkable groups in main resin B is 1:0.6~1.3. In this invention, both main resin A and main resin B contain crosslinkable groups and are crosslinked at 150~300℃, and the molar ratio of crosslinkable groups in the two resins is controlled to achieve a high crosslinking state, avoiding the shedding of the upper patterned material; they can also form strongly crosslinked structures on various substrates, making them highly adaptable. Attached Figure Description

[0038] Figure 1 These are test images of the blank sample and the patterned material and substrate intermediate coating composition of Example 1 of the present invention;

[0039] Figure 2 These are test images of the blank sample and the patterned material and substrate intermediate coating composition of Example 2 of the present invention;

[0040] Figure 3 These are test images of the blank sample and the patterned material and substrate intermediate coating composition of Example 3 of the present invention;

[0041] Figure 4 These are test images of the blank sample and the patterned material and substrate intermediate coating composition of Example 4 of the present invention;

[0042] Figure 5 These are test images of the blank sample and the patterned material and substrate intermediate coating composition of Example 5 of the present invention;

[0043] Figure 6 These are test images of the blank sample and the patterned material and substrate intermediate coating composition of Example 6 of the present invention;

[0044] Figure 7 These are test images of the blank sample and the patterned material and substrate intermediate coating composition of Example 7 of the present invention;

[0045] Figure 8 This is a test diagram of the blank sample and the patterned material and substrate intermediate coating composition of Example 8 of the present invention. Detailed Implementation

[0046] The present invention provides a patterned material and substrate intermediate coating composition, comprising a main resin A, a main resin B, a thermogenic acid-generating agent, and a solvent;

[0047] The acid dissociation constant pKa of the conjugate acid corresponding to the anion in the thermogenic acid-producing agent is less than -3;

[0048] Both the main resin A and the main resin B contain crosslinkable groups and are crosslinked at 150~300℃;

[0049] The molar ratio of crosslinkable groups in the main resin A to crosslinkable groups in the main resin B is 1:0.6~1.3.

[0050] In this invention, the molar ratio of crosslinkable groups in the main resin A and main resin B is controlled under the conditions of a thermogenic acid-producing agent and a high temperature of 150~300℃ to achieve a highly crosslinked state and avoid the shedding of the upper patterned material; they can also form a strongly crosslinked structure on a variety of substrates, making them highly applicable.

[0051] The content of the main resin A in this invention is 0.5~10 wt%, specifically 0.5 wt%, 1 wt%, 1.5 wt%, 2.0 wt%, 2.5 wt%, 3 wt%, 3.5 wt%, 4 wt%, 4.5 wt%, 5 wt%, 5.5 wt%, 6 wt%, 6.5 wt%, 7 wt%, 7.5 wt%, 8 wt%, 8.5 wt%, 9 wt%, 9.5 wt%, or 10 wt%; the content of the main resin B is 0.5~20 wt%, specifically 0.5 wt%, 1 wt%, 1.5 wt%, 2.0 wt%, 2.5 wt%, 3 wt%, 3.5 wt%, 4 wt%, 4.5 wt%, 5 wt%, 5.5 wt%, 6 wt%, 6.5 wt%, 7 wt%, 7.5 wt%, 8 wt%, 8.5 wt%, 9 wt%, 9.5 wt%, 10 wt%, 10.5 wt%, 11 wt%, 11.5 wt%, 12 wt%, 12.5 wt%, 13 wt%, 13.5 wt%, 14 wt%, 14.5 wt%, 15 wt%, 15.5 wt%, 16 wt%, 16.5 wt%, 17 wt%, 17.5 wt%, 18 wt%, 18.5 wt%, 19 wt%, 19.5 wt% or 20 wt%; the content of the thermogenic acid-producing agent is 0.1~1 wt%, specifically 0.1 wt%, 0.2 wt%, 0.3 wt%, 0.4 wt%, 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, 0.9 wt% or 1 wt%; the balance is solvent.

[0052] In this invention, the crosslinkable groups in the main resin A are selected from one or more of hydroxyl, phenolic hydroxyl, carboxyl, mercapto, amine without aromatic ring, sulfonate and phosphate; the crosslinkable groups in the main resin B are epoxy functional groups.

[0053] In this invention, the molar ratio of crosslinkable groups in the main resin A to epoxy functional groups in the main resin B is 1:0.6~1.3, preferably 1:0.7~1.0, specifically 1:0.7, 1:0.75, 1:0.8, 1:0.85, 1:0.9 or 1:1.0.

[0054] In this invention, the weight-average molecular weight of both main resin A and main resin B is 4000-40000 Daltons, and the molecular weight distribution is 1.2-3.2. Preferably, the weight-average molecular weight of main resin A is 15000-30000 Daltons, specifically 15000 Daltons, 16000 Daltons, 17000 Daltons, 18000 Daltons, 19000 Daltons, 20000 Daltons, 21000 Daltons, 22000 Daltons, 23000 Daltons, 24000 Daltons, 25000 Daltons, 26000 Daltons, 27000 Daltons, 28000 Daltons, 29000 Daltons, or 30000 Daltons; the molecular weight distribution is 1.5-2.2, specifically 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1, or 2.2.

[0055] The weight-average molecular weight of the main resin B is 4,000 to 10,000 Daltons, specifically 4,000 Daltons, 5,000 Daltons, 6,000 Daltons, 7,000 Daltons, 8,000 Daltons, 9,000 Daltons, or 10,000 Daltons; the molecular weight distribution is 1.2 to 1.8, specifically 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, or 1.8.

[0056] The main resin A described in this invention has the structure of Formula I:

[0057] Formula I;

[0058] In Formula I, R 1 R 2 R 3 Independently selected from -H or straight-chain or branched alkyl groups containing 1 to 5 carbon atoms;

[0059] R1, R2, and R3 are independently selected from ester, ether, amide, ketyl, or one or more straight-chain or branched alkylene groups containing ester, ether, amide, or ketyl groups, wherein the number of carbon atoms in the alkylene group is 1 to 5.

[0060] R4 is a phenyl group containing 6 to 30 carbon atoms, its derivatives, naphthalene group, biphenyl group, or terphenyl group.

[0061] The R5 is a hydroxyl group, phenolic hydroxyl group, carboxyl group, mercapto group, sulfonic acid group, phosphoric acid group, or an amino group that does not contain an aromatic ring;

[0062] R6 is a heterocyclic alkyl or alkyl group;

[0063] a and c are greater than or equal to 0, and b is greater than 0.

[0064] In Formula I, R 1 R 2 R 3 R1, R2, and R3 are independently preferably selected from -H, -CH2-CH3, -CH2-CH2-CH2-CH3, or -C(CH3)3; , or ;

[0065] The R4 is preferably from ;

[0066] The R5 is preferably selected from -OH, -COOH, -HS, -SO3H, -NH2 or -(C6H4)OH;

[0067] The R6 is preferably from .

[0068] In a specific embodiment of the present invention, the main resin A is any of the following:

[0069] Formula 101 Formula 102

[0070] Formula 103 Equation 104;

[0071] The main resin B described in this invention has a structure of formula II:

[0072] Formula II;

[0073] In Formula II, R 1 and R 2 Independently selected from -H or straight-chain or branched alkyl groups containing 1 to 5 carbon atoms;

[0074] The R1 is selected from -H, ester group, ether group, amide group, ketone alkyl group, or a straight-chain or branched alkyl group containing one or more of ester group, ether group, amide group, and ketone alkyl group.

[0075] The R2 is selected from ester group, ether group, amide group, ketone alkyl group, or one or more straight-chain or branched alkylene groups containing ester group, ether group, amide group, ketone alkyl group, and the number of carbon atoms in the alkylene group is 1 to 5.

[0076] R3 is an epoxy group;

[0077] Where n>0.

[0078] In Formula II, R 1 and R 2 R1 is preferably selected from -H, -CH2-CH3, -CH2-CH2-CH2-CH3 or -C(CH3)3; R2 is preferably selected from -O-, -COO-, -CO-NH- or -C=O-.

[0079] The R3 is preferably from .

[0080] The main resin B in the embodiments of the present invention is selected from any of the following:

[0081] Formula 201 Formula 202 Equation 203.

[0082] The acid dissociation constant (pKa) of the conjugate acid corresponding to the anion in the thermogenic acid-producing agent described in this invention is below -3 at room temperature (25°C), and it can release more protons at high temperatures (150-300°C). The thermogenic acid-producing agent described in this invention is preferably a fluorinated sulfonate or its corresponding conjugate acid. The fluorinated sulfonate is preferably selected from triethylamine trifluoromethanesulfonate, phthaliminotrifluoromethanesulfonate, naphthyliminotrifluoromethanesulfonate, diphenyliodotrifluoromethanesulfonate, diphenyliodoperfluorobutyl sulfonate, diphenyl-p-methoxyphenylsulfonate, diphenyl-p-toluenesulfonate, diphenyl-p-tert-butylphenylsulfonate, diphenyl-p-isobutylphenylsulfonate, triphenylsulfonate, and diphenyl-p-methoxyphenylsulfonate perfluorobutyl. At least one of the following: sulfonate, diphenyl-p-tolylsulfonium perfluorobutyl sulfonate, diphenyl-p-tert-butylphenylsulfonium perfluorobutyl sulfonate, diphenyl-p-isobutylphenylsulfonium perfluorobutyl sulfonate, triphenylsulfonium perfluorobutyl sulfonate, tri-p-tert-butylphenylsulfonium perfluorobutyl sulfonate, ammonium perfluorohexyl sulfonate, potassium perfluoroheptyl sulfonate, sodium perfluoropentane sulfonate, potassium perfluorohexane sulfonate, potassium ammonium perfluorooctyl sulfonate, and dibutylnaphthylsulfonium trifluoromethanesulfonate, more preferably one or more of triethylamine trifluoromethanesulfonate, diphenyliodoperfluorobutyl sulfonate, and diphenyliodotrifluoromethanesulfonate. In this invention, the conjugate acid corresponding to the anion in the fluorinated sulfonate is selected from at least one of trifluoromethanesulfonic acid, perfluorobutylsulfonic acid, perfluorohexylsulfonic acid, perfluoroheptylsulfonic acid, perfluoropentanesulfonic acid, perfluorohexanesulfonic acid, and perfluorooctylsulfonic acid; wherein, at 25°C, the acidic dissociation constant pKa of perfluorobutylsulfonic acid is -3.57; and the acidic dissociation constant pKa of trifluoromethanesulfonic acid is -14.

[0083] The solvent used in this invention is selected from any one or more of propylene glycol methyl ether acetate (PGMEA), propylene glycol monoacetate, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, diethylene glycol methyl ether, methyl 2-hydroxyisobutyrate, γ-butyrolactone, and cyclohexanone.

[0084] In a specific embodiment of the present invention, the formulation of the patterned material and the substrate intermediate coating composition includes:

[0085] The composition comprises a host resin A having a structure of formula 101, a host resin B having a structure of formula 201, diphenyliodoperfluorobutyl sulfonate, and PGMEA solvent in a mass ratio of 5.4:6.7:0.2:94.1; the molar ratio of hydroxyl groups in host resin A to epoxy groups in host resin B is 1:1.3.

[0086] Or, a main resin A having the structure of formula 102, a main resin B having the structure of formula 202, triethylamine trifluoromethanesulfonate salt, and PGMEA solvent in a mass ratio of 4.9:8.4:0.2:80.6; the molar ratio of amino groups in main resin A to epoxy groups in main resin B is 1:0.8;

[0087] Or, a main resin A having the structure of formula 103, a main resin B having the structure of formula 203, diphenyliodoperfluorobutyl sulfonate, and PGMEA solvent in a mass ratio of 7.8:8.9:0.2:100.8; the molar ratio of carboxyl groups in main resin A to epoxy groups in main resin B is 1:0.75;

[0088] Or, a main resin A having the structure of formula 104, a main resin B having the structure of formula 201, diphenyliodotrifluoromethanesulfonate, and PGMEA solvent in a mass ratio of 6.4:7.6:0.2:110.8; the molar ratio of sulfonic acid groups in main resin A to epoxy groups in main resin B is 1:1.1;

[0089] Or it may include a main resin A having a structure of formula 104, a main resin B having a structure of formula 202, triethylamine trifluoromethanesulfonate salt and PGMEA solvent in a mass ratio of 9.5:7.8:0.2:132; the molar ratio of sulfonic acid groups in main resin A to epoxy groups in main resin B is 1:0.6;

[0090] Or it may include a host resin A having the structure of formula 102, a host resin B having the structure of formula 203, diphenyliodotrifluoromethanesulfonate, and PGMEA solvent in a mass ratio of 5.8:5.9:0.2:90.7; the molar ratio of amino groups in host resin A to epoxy groups in host resin B is 1:0.7;

[0091] Alternatively, it may include a host resin A having the structure of formula 102, a host resin B having the structure of formula 201, diphenyliodotrifluoromethanesulfonate, and PGMEA solvent in a mass ratio of 8.1:7.5:0.2:75.3; the molar ratio of amine groups in host resin A to epoxy groups in host resin B is 1:1.2.

[0092] It may include a host resin A having the structure of formula 103, a host resin B having the structure of formula 202, trifluoromethanesulfonic acid, and PGMEA solvent in a mass ratio of 7.4:9.6:0.15:100.5; the molar ratio of carboxyl groups in host resin A to epoxy groups in host resin B is 1:0.7.

[0093] The patterned material and substrate intermediate coating composition described in this invention are preferably prepared according to the following method:

[0094] The main resin A, main resin B, and thermogenic acid-producing agent are dissolved in a solvent to obtain a mixture;

[0095] The mixture was shaken until completely dissolved, then filtered to obtain a patterned material and substrate intermediate coating composition.

[0096] The present invention preferably uses a mechanical shaker for shaking; the present invention preferably uses a 0.2 μm filter head for filtration.

[0097] The present invention preferably involves coating a patterned material and a substrate intermediate coating composition onto a wafer and heating it to obtain a thin film.

[0098] This invention provides an application of the patterning material and substrate intermediate coating composition described above on a patterned substrate;

[0099] The patterned substrate is selected from SiO2, Cu, Co, W, Si3N4, SiOC, SiCN, Al2O3 or TiN.

[0100] The above-mentioned patterned material and substrate intermediate coating composition can form a strong cross-linked structure on various patterned substrates, and has strong applicability.

[0101] The present invention also provides a device prepared using the patterned material and substrate intermediate coating composition described above. Specifically, the device is a wafer.

[0102] To further illustrate the present invention, the following detailed description, in conjunction with embodiments, provides a patterned material and substrate intermediate coating composition, its applications, and devices, but these descriptions should not be construed as limiting the scope of protection of the present invention.

[0103] Example 1

[0104] 5.4 g of host resin A with structure formula 101, 6.7 g of host resin B with structure formula 201, and 0.2 g of diphenyliodoperfluorobutyl sulfonate were dissolved in 94.1 g of PGMEA solvent. The molar ratio of hydroxyl groups in host resin A to epoxy groups in host resin B was 1:1.3. The weight-average molecular weight of host resin A was 21,000 Daltons, with a molecular weight distribution of 2.1, and the weight-average molecular weight of host resin B was 7,000 Daltons, with a molecular weight distribution of 1.6. The mixture was placed on a mechanical shaker and shaken until completely dissolved. After filtration through a 0.2 μm filter, a patterned material and substrate intermediate coating composition was obtained. This composition was coated onto a Si3N4 wafer and heated to 200°C to obtain a thin film. A 1 cm × 5 cm area was cut from the edge of the wafer as a blank before PGMEA cleaning. The remaining wafer was cleaned using PGMEA. The color change of the film before and after cleaning was observed (see [reference]). Figure 1 The composition is fully cross-linked and retains its original color after cleaning with a thickness change of ≤0.5%. Otherwise, the color changes and the thickness change is >0.5%.

[0105] Example 2

[0106] 4.9 g of host resin A with structure formula 102, 8.4 g of host resin B with structure formula 202, and 0.2 g of triethylamine trifluoromethanesulfonate were dissolved in 80.6 g of PGMEA solvent. The molar ratio of amine groups in host resin A to epoxy groups in host resin B was 1:0.8. The weight-average molecular weight of host resin A was 25,000 Daltons with a molecular weight distribution of 2.3, and the weight-average molecular weight of host resin B was 5,000 Daltons with a molecular weight distribution of 1.5. The mixture was shaken on a mechanical shaker until completely dissolved, and then filtered through a 0.2 μm filter to obtain a patterned material and substrate intermediate coating composition. This composition was coated onto a TiN wafer and heated to 200 °C to obtain a thin film. A 1 cm × 5 cm area was cut from the edge of the wafer as a blank before PGMEA cleaning. The remaining wafer was cleaned using PGMEA. The color change of the film before and after cleaning was observed (see [reference]). Figure 2 The composition is fully cross-linked and retains its original color after cleaning with a thickness change of ≤0.5%. Otherwise, the color changes and the thickness change is >0.5%.

[0107] Example 3

[0108] 7.8 g of host resin A with structure formula 103, 8.9 g of polymer 2 with structure formula 203, and 0.2 g of diphenyliodoperfluorobutyl sulfonate were dissolved in 100.8 g of PGMEA solvent. The molar ratio of carboxyl groups in host resin A to epoxy groups in host resin B was 1:0.75. The weight-average molecular weight of host resin A was 30,000 Daltons with a molecular weight distribution of 2.2, and the weight-average molecular weight of host resin B was 10,000 Daltons with a molecular weight distribution of 1.8. The mixture was shaken on a mechanical shaker until completely dissolved, and then filtered through a 0.2 μm filter to obtain a patterned material and substrate intermediate coating composition. This composition was coated onto an Al2O3 wafer and heated to 200°C to obtain a thin film. A 1 cm × 5 cm area was cut from the edge of the wafer as a blank before PGMEA cleaning. The remaining wafer was cleaned using PGMEA. The color change of the film before and after cleaning was observed (see [reference]). Figure 3 The composition is fully cross-linked and retains its original color after cleaning with a thickness change of ≤0.5%. Otherwise, the color changes and the thickness change is >0.5%.

[0109] Example 4

[0110] 6.4 g of host resin A with structure formula 104, 7.6 g of host resin B with structure formula 201, and 0.2 g of diphenyliodotrifluoromethanesulfonate were dissolved in 110.8 g of PGMEA solvent. The molar ratio of sulfonic acid groups in host resin A to epoxy groups in host resin B was 1:1.1. The weight-average molecular weight of host resin A was 15,000 Daltons with a molecular weight distribution of 1.5, and the weight-average molecular weight of host resin B was 7,000 Daltons with a molecular weight distribution of 1.6. The mixture was shaken on a mechanical shaker until completely dissolved, and then filtered through a 0.2 μm filter to obtain a patterned material and substrate intermediate coating composition. This composition was coated onto a SiO2 wafer and heated to 200 °C to obtain a thin film. A 1 cm × 5 cm area was cut from the edge of the wafer as a blank before PGMEA cleaning. The remaining wafer was cleaned using PGMEA. The color change of the film before and after cleaning was observed (see [reference]). Figure 4 The composition is fully cross-linked and retains its original color after cleaning with a thickness change of ≤0.5%. Otherwise, the color changes and the thickness change is >0.5%.

[0111] Example 5

[0112] 9.5g of host resin A with structure formula 104, 7.8g of host resin B with structure formula 202, and 0.2g of triethylamine trifluoromethanesulfonate were dissolved in 132g of PGMEA solvent. The molar ratio of sulfonic acid groups in host resin A to epoxy groups in host resin B was 1:0.6. The weight-average molecular weight of host resin A was 15,000 Daltons with a molecular weight distribution of 1.5, and the weight-average molecular weight of host resin B was 5,000 Daltons with a molecular weight distribution of 1.5. The mixture was shaken on a mechanical shaker until completely dissolved, and then filtered through a 0.2 μm filter to obtain a patterned material and substrate intermediate coating composition. This composition was coated onto a SiCN wafer and heated to 200°C to obtain a thin film. A 1cm × 5cm area was cut from the edge of the wafer as a blank before PGMEA cleaning. The remaining wafer was cleaned using PGMEA. The color change of the film before and after cleaning was observed (see [link to relevant documentation]). Figure 5 The composition is fully cross-linked and retains its original color after cleaning with a thickness change of ≤0.5%. Otherwise, the color changes and the thickness change is >0.5%.

[0113] Example 6

[0114] 5.8 g of host resin A with structure formula 102, 5.9 g of host resin B with structure formula 203, and 0.2 g of diphenyliodotrifluoromethanesulfonate were dissolved in 90.7 g of PGMEA solvent. The molar ratio of amino groups in host resin A to epoxy groups in host resin B was 1:0.7. The weight-average molecular weight of host resin A was 25,000 Daltons, and the molecular weight distribution was 2.3. The weight-average molecular weight of host resin B was 10,000 Daltons, and the molecular weight distribution was 1.8. The mixture was placed on a mechanical shaker and shaken until completely dissolved. After filtration through a 0.2 μm filter, a patterned material and substrate intermediate coating composition was obtained. This composition was coated onto a SiOC wafer and heated to 200 °C to obtain a thin film. A 1 cm × 5 cm area was cut from the edge of the wafer as a blank before PGMEA cleaning. The remaining wafer was cleaned using PGMEA. The color change of the film before and after cleaning was observed (see [reference]). Figure 6 The composition is fully cross-linked and retains its original color after cleaning with a thickness change of ≤0.5%. Otherwise, the color changes and the thickness change is >0.5%.

[0115] Example 7

[0116] 8.1 g of host resin A having the structure of formula 102, 7.5 g of host resin B having the structure of formula 201, and 0.2 g of diphenyliodotrifluoromethanesulfonate were dissolved in 75.3 g of PGMEA solvent. The molar ratio of the amino groups of host resin A to the epoxy groups of host resin B was 1:1.2. The weight-average molecular weight of host resin A was 25,000 Daltons, and the molecular weight distribution was 2.3. The weight-average molecular weight of host resin B was 7,000 Daltons, and the molecular weight distribution was 1.6. The mixture was placed on a mechanical shaker and shaken until completely dissolved. After filtration through a 0.2 μm filter, a patterned material and substrate intermediate coating composition was obtained. This composition was coated onto a Cu wafer and heated to 200 °C to obtain a thin film. A 1 cm × 5 cm area was cut from the edge of the wafer as a blank before PGMEA cleaning. The remaining wafer was cleaned using PGMEA. The color change of the film before and after cleaning was observed (see [reference]). Figure 7 The composition is fully cross-linked and retains its original color after cleaning with a thickness change of ≤0.5%. Otherwise, the color changes and the thickness change is >0.5%.

[0117] Example 8

[0118] 7.4 g of host resin A with structure formula 103, 9.6 g of host resin B with structure formula 202, and 0.15 g of trifluoromethanesulfonic acid were dissolved in 100.5 g of PGMEA solvent. The molar ratio of carboxyl groups in host resin A to epoxy groups in host resin B was 1:0.7. The weight-average molecular weight of host resin A was 30,000 Daltons with a molecular weight distribution of 2.2, and the weight-average molecular weight of host resin B was 5,000 Daltons with a molecular weight distribution of 1.5. The mixture was placed on a mechanical shaker and shaken until completely dissolved. After filtration through a 0.2 μm filter, a patterned material and substrate intermediate coating composition was obtained. This composition was coated onto a Si3N4 wafer and heated to 200 °C to obtain a thin film. A 1 cm × 5 cm area was cut from the edge of the wafer as a blank before PGMEA cleaning. The remaining wafer was cleaned using PGMEA. The color change of the film before and after cleaning was observed (see [reference]). Figure 8 The composition is fully cross-linked and retains its original color after cleaning with a thickness change of ≤0.5%. Otherwise, the color changes and the thickness change is >0.5%.

[0119] Table 1

[0120]

[0121] As can be seen from the above embodiments, the present invention provides a patterned material and substrate intermediate coating composition, comprising a main resin A, a main resin B, a thermogenic acid-producing agent, and a solvent; the acid dissociation constant pKa of the conjugate acid corresponding to the anion in the thermogenic acid-producing agent is lower than -3; both main resin A and main resin B contain crosslinkable groups and are crosslinked at 150~300℃; the molar ratio of crosslinking groups in main resin A to crosslinking groups in main resin B is 1:0.6~1.3. In the present invention, by controlling the molar ratio of crosslinking groups in the two resins under the conditions of thermogenic acid-producing agent and 150~300℃, a high crosslinking state is achieved, avoiding the shedding of the upper patterned material; they can also form a strong crosslinked structure on various substrates, exhibiting strong applicability. Experimental results show that the crosslinking degree of the patterned material and substrate intermediate coating composition with different compositions is acceptable on different patterned substrates.

[0122] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A patterned material and a substrate intermediate coating composition, characterized in that, Includes main resin A, main resin B, thermogenic acid-producing agent, and solvent; The acid dissociation constant pKa of the conjugate acid corresponding to the anion in the thermogenic acid-producing agent is less than -3; Both the main resin A and the main resin B contain crosslinkable groups and are crosslinked at 150~300℃; The molar ratio of crosslinkable groups in the main resin A to crosslinkable groups in the main resin B is 1:0.6~1.3; Main resin A has the structure of formula I: Formula I; In Formula I, R 1 R 2 and R 3 Independently selected from -H or straight-chain or branched alkyl groups containing 1 to 5 carbon atoms; R1, R2, and R3 are independently selected from ester, ether, amide, ketyl, or one or more straight-chain or branched alkylene groups containing ester, ether, amide, or ketyl groups, wherein the number of carbon atoms in the alkylene group is 1 to 5. R4 is a phenyl group containing 6 to 30 carbon atoms, its derivatives, naphthalene group, biphenyl group, or terphenyl group. The R5 is a hydroxyl group, phenolic hydroxyl group, carboxyl group, mercapto group, sulfonic acid group, phosphoric acid group, or an amino group that does not contain an aromatic ring; R6 is a heterocyclic alkyl or alkyl group; a and c are greater than or equal to 0, and b is greater than 0; The main resin B has a structure of formula II: Formula II; In Formula II, R 1 and R 2 Independently selected from -H or straight-chain or branched alkyl groups containing 1 to 5 carbon atoms; The R1 is selected from -H, ester group, ether group, amide group, ketone alkyl group, or a straight-chain or branched alkyl group containing one or more of ester group, ether group, amide group, and ketone alkyl group. The R2 is selected from ester group, ether group, amide group, ketone alkyl group, or a straight-chain or branched alkylene group containing one or more of ester group, ether group, amide group, and ketone alkyl group, wherein the number of carbon atoms in the alkylene group is 1 to 5. R3 is an epoxy group; Where n > 0.

2. The patterned material and substrate intermediate coating composition according to claim 1, characterized in that, The content of the main resin A is 0.5~10wt%, the content of the main resin B is 0.5~20wt%, the content of the thermogenic acid-producing agent is 0.1~1wt%, and the balance is solvent.

3. The patterned material and substrate intermediate coating composition according to claim 1, characterized in that, The crosslinkable groups in the main resin A are selected from one or more of the following: hydroxyl, phenolic hydroxyl, carboxyl, mercapto, amino group without aromatic ring, sulfonate and phosphate. The crosslinkable groups in the main resin B are epoxy functional groups; The molar ratio of crosslinkable groups in host resin A to epoxy functional groups in host resin B is 1:0.7~1.

0.

4. The patterned material and substrate intermediate coating composition according to claim 1, characterized in that, The weight-average molecular weights of both main resin A and main resin B are 4,000 to 40,000 Daltons, and their molecular weight distributions are 1.2 to 3.

2.

5. The patterned material and substrate intermediate coating composition according to claim 4, characterized in that, The main resin A has a weight-average molecular weight of 15,000 to 30,000 Daltons and a molecular weight distribution of 1.5 to 2.

2. The main resin B has a weight-average molecular weight of 4,000 to 10,000 Daltons and a molecular weight distribution of 1.2 to 1.

8.

6. The patterned material and substrate intermediate coating composition according to claim 1, characterized in that, The thermogenic acid-producing agent is selected from fluorine-containing sulfonates or their corresponding conjugate acids.

7. The patterned material and substrate intermediate coating composition according to claim 6, characterized in that, The fluorinated sulfonate is selected from triethylamine trifluoromethanesulfonate, benzoyliminotrifluoromethanesulfonate, naphthyliminotrifluoromethanesulfonate, diphenyliodotrifluoromethanesulfonate, diphenyliodoperfluorobutylsulfonate, diphenyl-p-methoxyphenylsulfonate, diphenyl-p-toluenesulfonate, diphenyl-p-tert-butylphenylsulfonate, diphenyl-p-isobutylphenylsulfonate, triphenylsulfonate, and diphenyl-p-methoxy The following is a list of at least one of the following: diphenyl-p-tolyl sulfonate, diphenyl-p-tert-butylphenyl sulfonate, diphenyl-p-isobutylphenyl sulfonate, triphenyl-p-tert-butylphenyl sulfonate, tri-p-tert-butylphenyl sulfonate, ammonium perfluorohexyl sulfonate, potassium perfluoroheptyl sulfonate, sodium perfluoropentane sulfonate, potassium perfluorohexane sulfonate, potassium perfluorooctyl sulfonate, and dibutylnaphthyl sulfonate; The conjugate acid corresponding to the anion in the fluorinated sulfonate is selected from at least one of trifluoromethanesulfonic acid, perfluorobutylsulfonic acid, perfluoroheptylsulfonic acid, perfluoropentanesulfonic acid, perfluorohexanesulfonic acid, and perfluorooctylsulfonic acid.

8. The application of the patterning material and substrate intermediate coating composition according to any one of claims 1 to 7 on a patterned substrate; The patterned substrate is selected from SiO2, Cu, Co, W, Si3N4, SiOC, SiCN, Al2O3 or TiN.

9. A device prepared using the patterned material and substrate intermediate coating composition according to any one of claims 1 to 7.

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