Hybrid exposure method, exposure system, storage medium and program product

Abstract

The invention discloses a mixed exposure method, an exposure system, a storage medium and a program product, which are applied to the technical field of photoetching. The method comprises the steps that a to-be-exposed pattern is divided into a first pattern area and a second pattern area based on preset exposure precision, and the exposure precision of the first pattern area is lower than that of the second pattern area; the photoresist region corresponding to the first pattern region is exposed through a first exposure process, the photoresist region corresponding to the second pattern region is exposed through a second exposure process, so that the mask is obtained, and the exposure precision of the first exposure process is smaller than that of the second exposure process; and exposing the to-be-exposed substrate through the mask. Therefore, by adopting exposure processes with different precisions in different regions, the preparation efficiency of the mask can be improved and the exposure requirement of a subsequent to-be-exposed substrate can be met under the condition that the precision of a key region is ensured, so that the high resolution capability is ensured while the processing time is shortened.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of photolithography, and particularly relates to a hybrid exposure method, an exposure system, a computer readable storage medium and a computer program product. BACKGROUND

[0002] With the continuous development of science and technology, optical lithography technology has become the mainstream technology for manufacturing large-area integrated circuit devices. However, although the current optical lithography process can realize rapid processing and effectively reduce the processing time, the scattering of photons in the wavelength scale is limited, and in the case that the processing feature size is close to or smaller than the wavelength of light, the photon scattering effect is obviously enhanced, which makes it difficult to further reduce the minimum resolution of the optical lithography process.

[0003] Therefore, it is very important to improve the resolution while shortening the processing time as much as possible. SUMMARY

[0004] The present application aims to at least solve one of the technical problems existing in the prior art. To this end, the present application provides a hybrid exposure method, an exposure system, a computer readable storage medium and a computer program product, which can improve the preparation efficiency of the mask by using different exposure processes in different regions, ensure the accuracy of the key region, adapt to the exposure requirements of the subsequent to-be-exposed substrate, and thus realize the high resolution capability while shortening the processing time.

[0005] In a first aspect, the present application provides a hybrid exposure method, comprising: based on a preset exposure accuracy, dividing a to-be-exposed pattern into a first pattern region and a second pattern region, wherein the exposure accuracy of the first pattern region is lower than the exposure accuracy of the second pattern region; exposing the photoresist region corresponding to the first pattern region by using a first exposure process, and exposing the photoresist region corresponding to the second pattern region by using a second exposure process to obtain a mask, wherein the exposure accuracy of the first exposure process is less than the exposure accuracy of the second exposure process; exposing a to-be-exposed substrate by using the mask.

[0006] In a second aspect, the present application provides an exposure system, comprising a memory and a processor; the memory stores a computer program that can run on the processor, and the processor implements the hybrid exposure method described above when executing the computer program.

[0007] In a third aspect, the present application provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the hybrid exposure method described above.

[0008] In a fourth aspect, the present application provides a computer program product, comprising a computer program, wherein the computer program is executed by a processor to implement the mixed exposure method.

[0009] The mixed exposure method, the exposure system, the computer readable storage medium and the computer program product provided by the embodiments of the present application can avoid the problem of resource waste caused by using a single high-precision process to process the entire to-be-exposed pattern, and can also avoid the problem that a single low-precision process cannot meet the resolution requirement of the fine area.

[0010] The mask plate obtained by the sub-area exposure simultaneously contains high-precision patterns meeting the fine structure requirement and low-precision patterns meeting the basic contour requirement, and can accurately match the pattern requirement of the subsequent to-be-exposed substrate, thereby achieving the purpose of shortening the processing time while ensuring the high-resolution capability.

[0011] Additional aspects and advantages of the embodiments of the present application will be in part apparent and in part pointed out hereinafter. BRIEF DESCRIPTION OF DRAWINGS

[0012] The above and / or additional aspects and advantages of the present application will become apparent and be readily appreciated from the following description, including the appended drawings, wherein: Figure 1 is a first application scenario diagram of the mixed exposure method provided by the embodiments of the present application; Figure 2 is a second application scenario diagram of the mixed exposure method provided by the embodiments of the present application; Figure 3 is a first flowchart of the mixed exposure method provided by the embodiments of the present application; Figure 4 is a second flowchart of the mixed exposure method provided by the embodiments of the present application; Figure 5 is an exposure diagram in which the first exposure process is a laser direct writing exposure process provided by the embodiments of the present application; Figure 6 is a diagram of adding an isolation layer of the mixed exposure method provided by the embodiments of the present application; Figure 7 is a first exposure diagram in which the second exposure process is an electron beam exposure process provided by the embodiments of the present application; Figure 8 is a second exposure diagram in which the second exposure process is an electron beam exposure process provided by the embodiments of the present application; Figure 9is a third flowchart of a hybrid exposure method provided by an embodiment of the present application; Figure 10 is a fourth flowchart of a hybrid exposure method provided by an embodiment of the present application; Figure 11 is a schematic diagram of a mask plate obtained by material deposition in a hybrid exposure method provided by an embodiment of the present application; Figure 12 is a schematic diagram of a mask plate obtained by a hybrid exposure method provided by an embodiment of the present application; Figure 13 is a schematic diagram of a mask plate obtained by a hybrid exposure method provided by an embodiment of the present application used in a micro-nano imprinting process; Figure 14 is a schematic diagram of a module of a hybrid exposure device provided by an embodiment of the present application; Figure 15 is a schematic diagram of a structure of an exposure system provided by an embodiment of the present application. DETAILED DESCRIPTION

[0013] Embodiments of the present application will be described in detail below, examples of the embodiments of the present application are shown in the accompanying drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as a limitation of the present application.

[0014] In the description of the present application, it should be understood that the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified and limited.

[0015] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrally connected. It can be a mechanical connection, or an electrical connection. It can be directly connected, or indirectly connected through an intermediate medium. It can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0016] Based on the problems in the background art, the embodiments of the present application provide a hybrid exposure method, an exposure system, a computer readable storage medium and a computer program product.

[0017] For the convenience of understanding, the background art and application scenarios of the present application are introduced as follows: Generally, a large-area integrated circuit device has multiple different functional modules to meet diversified functional requirements. Different functional modules have obvious differences in precision requirements. For example, modules such as peripheral power supply wiring and signal transmission lines have low requirements for line width precision, belonging to a low-precision area; modules such as core logic operation units and storage units require smaller line widths to achieve high-density integration, belonging to a high-precision area. Such precision partitioning is the result of balancing the functional implementation and manufacturing economy of a large-area integrated circuit device.

[0018] However, the precision improvement of the traditional optical lithography process is limited by the wavelength characteristics of photons. When the feature size to be processed gradually approaches or is even smaller than the wavelength of the light used, the scattering effect of photons will be significantly intensified. The scattering effect of photons will cause the edges of the patterns on the photoresist to be blurred and the details to be distorted, making it difficult for the lithography process to further reduce the minimum resolution and unable to meet the processing requirements of more precise feature sizes.

[0019] The electron beam exposure process generally uses a point-by-point scanning method to complete pattern processing, and the processing period is generally longer. For a large-area integrated circuit device, the point-by-point scanning needs to cover a wider area, resulting in a significant increase in processing time and thus increasing the time cost and labor input cost. Its efficiency is difficult to reach the level required for mass production, and it is difficult to adapt to the efficient manufacturing requirements of large-area devices.

[0020] High-resolution optical lithography technology (such as Extreme Ultraviolet Lithography, EUV) can achieve higher precision based on an abnormally complex optical system (such as a reflective objective lens, a laser plasma light source, etc.). However, the abnormally complex optical system has extremely high precision requirements for core components, and also requires special light source equipment, and the maintenance of the entire system must be carried out in a super-clean environment. The complex structure design and harsh use conditions make the procurement cost and long-term operation and maintenance cost of the equipment high, which is difficult to be widely promoted.

[0021] In the case of processing a large-area pattern, the electron beam exposure process needs to be implemented through write field splicing. The write field splicing has extremely high requirements for the alignment precision of adjacent write fields, and due to external factors such as mechanical vibration and environmental temperature drift, defects are easily caused at the splicing position, thereby affecting the electrical performance of the final product device. At the same time, the dose uniformity of the electron beam is also easily disturbed by factors such as beam stability and electromagnetic interference. The longer the processing time is, the more significant the influence caused by these disturbances will be, ultimately reducing the overall processing precision and affecting the product quality.

[0022] The mixed exposure method provided in the application can avoid the resource waste problem caused by using a single high-precision process to process the entire to-be-exposed pattern, and also avoid the problem that a single low-precision process cannot meet the resolution requirement of a fine area.

[0023] The mask plate obtained through the area-based exposure simultaneously contains high-precision patterns meeting the fine structure requirement and low-precision patterns meeting the basic contour, and can accurately match the pattern requirement of the subsequent to-be-exposed substrate, thereby achieving the shortening of the processing time while ensuring the high-resolution capability.

[0024] Please refer to Figure 1 , Figure 1 is an application scenario diagram of a mixed exposure method provided in an embodiment of the application. The application scenario provided in the application includes an exposure system 100, the exposure system 100 includes a first exposure device 10, a second exposure device 20 and a controller 30, and the mixed exposure method provided in the application can be executed by the controller 30.

[0025] The first exposure device 10 is a device adapted to a low-precision exposure process, and can be used to process a pattern area with a low precision requirement. The first exposure device 10 can quickly complete the exposure of a large-area and low-precision pattern, balance the efficiency and cost, and avoid the redundant use of a high-cost and high-precision device.

[0026] Optionally, the first exposure device 10 can include but is not limited to a laser direct writing photolithography machine, an inkjet printing exposure device and the like, and the embodiments of the application do not limit this.

[0027] The second exposure device 20 is a device adapted to a high-precision exposure process, and can be used to process a pattern area with a high precision requirement. The second exposure device 20 can realize the high-resolution exposure of a fine structure, meet the precision requirement of a core area and guarantee the device performance.

[0028] Optionally, the second exposure device 20 can include but is not limited to an electron beam direct writing exposure machine, a focused ion beam exposure device and the like, and the embodiments of the application do not limit this.

[0029] The controller 30 is connected to the first exposure device 10 and the second exposure device 20 respectively, and is used to control the operation of the first exposure device 10 and the second exposure device 20 respectively. The controller 30 can also be used to receive the data of a to-be-exposed pattern, divide different areas according to the precision and distribute to the corresponding exposure device. The controller 30 can also be used to feed back and correct the exposure parameters (such as power, dose, etc.) of the exposure device in real time, and guarantee the consistency of the exposure process.

[0030] Optionally, the controller 30 can include, but is not limited to, a host system (such as an industrial computer, a special workstation), a programmable logic controller (PLC), etc., which are not limited in the embodiments of the present application.

[0031] In an optional embodiment, referring to Figure 2 , the exposure system 100 includes a third exposure device 40 and a controller 30, and the hybrid exposure method provided by the present application can be executed by the controller.

[0032] The third exposure device 40 is a device capable of implementing exposure processes of different precisions. The third exposure device has a shared high-precision displacement table 41 and a positioning system, etc., and implements exposure processes of different precisions through a replaceable emission source 42 (such as a laser emission source and an electron beam emission source) and a matching assembly 43 (such as an optical / beam assembly) designed in a modular manner. In this way, exposure of two precisions can be completed on the same device, the device footprint is reduced, and the alignment error of the substrate transferred between devices is reduced.

[0033] Based on the above background technology and related scene introduction, the embodiments of the present application provide a hybrid exposure method, which will be described in detail as follows: Referring to Figure 3 , the hybrid exposure method provided by the embodiments of the present application is implemented by steps 011, 012 and 013, which will be described in detail as follows.

[0034] Step 011: based on a preset exposure precision, dividing a to-be-exposed pattern into a first pattern region and a second pattern region, wherein the exposure precision of the first pattern region is lower than that of the second pattern region; Step 012: exposing a photoresist region corresponding to the first pattern region by using a first exposure process, and exposing a photoresist region corresponding to the second pattern region by using a second exposure process, to obtain a mask, wherein the exposure precision of the first exposure process is less than that of the second exposure process; Step 013: exposing the to-be-exposed substrate by using the mask.

[0035] The preset exposure precision is an accuracy standard set based on experience or customized by a user.

[0036] In an optional embodiment, the preset exposure precision is located in the interval [500 nm, 2 um]. It can be understood that setting a specific preset exposure precision can provide a clear standard for the region division of the to-be-exposed pattern, and then accurately divide the first pattern region of low precision and the second pattern region of high precision.

[0037] The first exposure process is a low-precision exposure method suitable for the first pattern region, and the second exposure process is a high-precision exposure method suitable for the second pattern region. For example, the first exposure process is a laser direct writing exposure process, and the second exposure process is an electron beam exposure process.

[0038] It can be understood that the to-be-exposed pattern is composed of multiple regions, and different regions have different functions. For example, the core part (such as a logic operation unit, a storage unit, etc.) needs a smaller line width to achieve high-density integration; the peripheral structure (such as a power supply wiring, an interface circuit, etc.) only needs to ensure basic connectivity and does not need to be too precise. In this way, the design of each region can be combined as a whole to meet the device performance.

[0039] Specifically, according to a preset exposure precision, the to-be-exposed pattern is divided into a first pattern region with low precision requirements and a second pattern region with high precision requirements, and the attribution of different regions and the corresponding exposure process are determined. The first exposure process is used to expose the photoresist region corresponding to the first pattern region, and the second exposure process is used to expose the photoresist region corresponding to the second pattern region. Finally, the high-efficiency and low-cost processing of the low-precision first pattern region and the fine processing of the high-precision second pattern region are realized at the same time, and the exposure precision and efficiency are balanced.

[0040] Alternatively, the first exposure process can be used first, and then the second exposure process can be used; or the second exposure process can be used first, and then the first exposure process can be used. The execution order between the two exposure processes is not limited.

[0041] The prepared mask plate and the to-be-exposed substrate coated with photoresist are precisely aligned, the mask plate is irradiated by a light source (such as ultraviolet light, EUV) and / or an energy source, so that the light transmits through the light-transmitting region on the mask plate and is projected onto the photoresist of the to-be-exposed substrate, so that the photoresist in the light-receiving region undergoes a chemical change (such as positive gel degradation or negative gel crosslinking). Then, the to-be-exposed substrate after exposure is developed, washed and the like, so that a pattern consistent with the mask plate pattern is formed on the photoresist of the to-be-exposed substrate, thereby completing the pattern transfer from the mask plate to the to-be-exposed substrate.

[0042] In this way, the problem of resource waste caused by using a single high-precision process to process the entire to-be-exposed pattern can be avoided, and the problem that a single low-precision process cannot meet the resolution of the fine region can also be avoided. The pattern requirements of the subsequent to-be-exposed substrate are precisely matched, and the high-resolution capability is ensured while the processing time is shortened.

[0043] In an optional embodiment, the first exposure process includes a laser direct writing exposure process, and the second exposure process includes an electron beam exposure process.

[0044] Among them, the laser direct writing exposure process is a process of emitting laser from the emission source, controlling the focused laser beam to directly draw patterns on the photoresist point by point and line by line. The exposure precision of the laser direct writing exposure process is moderate (usually 1um~100um), the batch and fast production efficiency is high, and the cost is lower than that of the electron beam exposure process, which is widely used in scenes with low precision requirements.

[0045] Among them, the electron beam exposure process is a process of emitting high-energy electron beams from the emission source, scanning the photoresist point by point in a vacuum environment, and forming patterns through the interaction between electrons and photoresist molecules. The exposure precision of the electron beam exposure process is extremely high (can reach sub-nanometer level), and can realize the processing of ultra-fine structures; but the processing speed is slow, which is suitable for high-precision scenes.

[0046] In this way, the exposure of the large-area low-precision area is completed by the laser direct writing exposure process, and the processing of the core fine structure is completed by the electron beam exposure process. The combination of the two makes the mask obtained by the combination of the two realize the coexistence of high and low precision, balance the processing efficiency and precision demand, reduce the mask manufacturing cost, and adapt to the device manufacturing with multiple precision requirements.

[0047] In an optional embodiment, the photoresist includes a first photoresist and a second photoresist, the first photoresist is matched with the first exposure process, the second photoresist is matched with the second exposure process, the photoresist area corresponding to the first pattern area is composed of the first photoresist, and the photoresist area corresponding to the second pattern area is composed of the second photoresist.

[0048] It can be understood that the energy types (such as laser, electron, ion, etc.) and action mechanisms of different exposure processes are different, so the photoresist also needs to match the energy response characteristics of the exposure process. For example, the laser direct writing exposure process relies on photon energy, and is suitable for photoresists sensitive to specific wavelengths (such as ultraviolet sensitive glue, AZ 1500), which realizes patterning through photochemical reaction; the electron beam exposure process relies on high-energy electron beams, and the corresponding photoresist can crosslink or degrade through electron bombardment (for example, Hydrogen Silsesquioxane, abbreviated as HSQ), and its molecular structure needs to withstand the strong energy action of the electron beam.

[0049] If the photoresist does not match the exposure process, it will cause problems such as low photosensitivity, poor resolution, or pattern distortion, which cannot meet the process precision and reliability requirements.

[0050] In an optional embodiment, please refer to Figure 4 , step 012 includes: Step 0121: Expose the photoresist area corresponding to the first pattern area by the first exposure process; Step 0122: Expose the photoresist region corresponding to the second pattern region by using the second exposure process to obtain a mask.

[0051] Specifically, first spin a first layer of first photoresist corresponding to the first exposure process on a substrate (such as a silicon wafer smaller than 4 inches, glass, etc.) to a corresponding thickness, then perform a pre-baking, heat at a corresponding temperature to enhance the adhesion of the film to the substrate; then perform exposure by the first exposure process, and then perform a post-baking, heat at a corresponding temperature to promote the chemical reactions in the first photoresist that have not been completed, and stabilize the pattern structure; then after processing with a corresponding developer, the unexposed photoresist is dissolved, forming a three-dimensional structure of the bottom layer pattern.

[0052] Then spin a second layer of second photoresist corresponding to the second exposure process on the top layer of the substrate processed by the first exposure process to a corresponding thickness, then perform a pre-baking, heat at a corresponding temperature to enhance the adhesion between the films; then perform exposure by the second exposure process to make finer patterns, and then perform a post-baking, heat at a corresponding temperature to promote the chemical reactions in the first photoresist that have not been completed, and stabilize the pattern structure; then after processing with a corresponding developer again, the unexposed photoresist is dissolved, obtaining the pattern structure of the bottom layer and the fine functional layer.

[0053] For example, please refer to Figure 5 In the case where the first exposure process is a laser direct writing exposure process and the second exposure process is an electron beam exposure process, first spin a first layer of laser direct writing positive photoresist AZ 1500 on a 3-inch silicon wafer to 4um, then perform a pre-baking, bake at 80℃ for 3min to enhance the adhesion of the film to the substrate; then perform exposure by the laser direct writing exposure process, and then perform a post-baking, bake at 100℃ for 1.5min to promote the chemical reactions in the AZ 1500 that have not been completed, and stabilize the pattern structure; then after processing with a corresponding developer, the unexposed photoresist is dissolved, forming a three-dimensional structure of the bottom layer pattern.

[0054] Please refer to Figure 7 and Figure 8 Then, on the 3-inch silicon wafer processed by the laser direct writing exposure process, the spin coating process is to spin at a speed of 500rpm for 5s, and then at a high speed of 7000rpm for 60s to form a HSQ film with a thickness of about 105nm (error not more than 5nm) and a smooth surface; then perform a pre-baking, bake at 80℃ for 3min to enhance the adhesion between the films; then perform exposure by the electron beam exposure process to make finer patterns, and then perform a post-baking, bake at 100℃ for 1.5min to promote the chemical reactions in the HSQ that have not been completed, and stabilize the pattern structure; then after processing with a corresponding developer again, the unexposed photoresist is dissolved, obtaining the pattern structure of the bottom layer and the fine functional layer.

[0055] In an alternative embodiment, referring to Figure 4 , the hybrid exposure method further comprises step 014, which is specified below.

[0056] Step 014: Adding an isolation layer between the first photoresist and the second photoresist during the interval between the exposure using the first exposure process and the exposure using the second exposure process.

[0057] The isolation layer is a functional film between different photoresist layers, which is used for physical isolation and chemical blocking. For example, inorganic film (such as silicon nitride), metal film (such as aluminum, chromium), organic isolation material (such as polyimide), etc.

[0058] It can be understood that the first photoresist and the second photoresist may be mutually soluble, and the developer corresponding to the second photoresist may also cause damage to the first photoresist, and the developer corresponding to the first photoresist may also cause damage to the second photoresist.

[0059] Specifically, an isolation layer is additionally prepared between the exposed photoresist and the photoresist to be exposed by magnetron sputtering, thermal evaporation, chemical vapor deposition, etc. In this way, the contact between the first photoresist and the second photoresist can be blocked, the mixing can be avoided, and the secondary influence (such as accidental crosslinking or degradation) of the subsequent exposure energy on the completed photoresist pattern can be blocked.

[0060] For example, referring to Figure 6 , the magnetron sputtering technology is used to add an isolation layer (the dark line part in the figure indicated by the text of the isolation layer), and high-energy particles are used to bombard the target material (metal aluminum, chromium), so that the target material atoms are deposited on the exposed photoresist to form a thin film with high density, good uniformity, high chemical stability and mechanical strength as an isolation layer. Referring to Figure 7 and Figure 8 , the isolation layer can effectively physically isolate and chemically isolate the first photoresist and the second photoresist.

[0061] In an alternative embodiment, referring to Figure 9 , step 012 comprises: Step 0123: Exposing the photoresist region corresponding to the first pattern region using the first exposure process, and exposing the photoresist region corresponding to the second pattern region using the second exposure process, the exposed photoresist region corresponding to the first pattern region and the exposed photoresist region corresponding to the second pattern region respectively form a hybrid photoresist pattern; Step 0124: Depositing material on the hybrid photoresist pattern to obtain a mask plate.

[0062] In the material deposition, a target material (e.g., metal, oxide, etc.) is deposited on the surface of the photoresist by physical or chemical methods to form a structure complementary to the photoresist pattern, which is used to shape the subsequent mask pattern. For example, electrolytic plating of a metal master (metal ions are reduced and deposited on the surface of the mixed photoresist pattern by electrolysis to form a metal layer), physical deposition, chemical vapor deposition, etc.

[0063] Specifically, after the two exposure processes, the two types of photoresist regions obtained jointly form a mixed photoresist pattern containing high-precision and low-precision features. Based on the mixed photoresist pattern, the deposited material covers the mixed photoresist pattern and the area not protected by the photoresist through material deposition. Subsequently, by removing the photoresist, the remaining deposited material is the desired mask.

[0064] In this way, the preparation of the mask is realized by material deposition, which provides a high-precision template for subsequent large-scale photolithography of devices.

[0065] In an alternative embodiment, referring to Figure 10 , step 0122 includes: Step 01241: Plating a metal layer on the mixed photoresist pattern to form a composite structure; Step 01242: Removing the photoresist and the isolation layer in the composite structure, respectively, to obtain a mask.

[0066] Specifically, a metal layer (e.g., nickel, chromium, etc.) is deposited by electrolytic plating of a metal master, which covers the surface of the mixed isolation layer, photoresist pattern, and the substrate area not protected by the photoresist, forming a composite structure in which the photoresist, isolation layer, and metal layer are stacked. Then, chemical etching (e.g., photoresist solvent dissolution) or plasma etching is used to remove the photoresist and the isolation layer in the composite structure, leaving only the metal structure deposited on the substrate, and finally obtaining a mask formed by the metal structure.

[0067] For example, referring to Figure 11 , a metal layer is deposited on the surface of the isolation layer and the mixed photoresist pattern to form a composite structure before peeling, and a mask with an isolation layer is obtained after peeling off the photoresist. Then, by using chemical etching or plasma etching, the isolation layer is removed to obtain the mask shown in Figure 12 , which has patterns of different precision.

[0068] Alternatively, the mask with mixed patterns of high precision and low precision can not only be used for exposing the substrate to be exposed, but also be used in micro-nano imprinting process. Micro-nano imprinting process is a process that uses a pre-made master to imprint patterns on a plastic material (e.g., photoresist, polymer) by mechanical pressure, and the patterns are retained after solidification. Referring to Figure 13 , Figure 13The schematic diagram of the mask plate used in the micro-nano imprinting process is shown in the figure. The mask plate is used as a master plate for imprinting. The pattern on the mask plate is imprinted on the target material, so that the surface of the target material forms a structure complementary to the mask plate. After removing the mask plate, the finished product with micro-nano pattern structure is obtained.

[0069] In this way, the high-precision features formed by the two exposure processes are retained by the metal plating layer, and finally a mask plate with both efficiency and precision is obtained, which can meet the lithography needs of complex devices.

[0070] According to the method described in the above embodiment, the application also provides a hybrid exposure device for executing the steps in the above hybrid exposure method. Please refer to Figure 14 , Figure 14 is a module schematic diagram of the hybrid exposure device 200 provided by the application. The hybrid exposure device 200 comprises: The division module 201 is configured to divide the to-be-exposed pattern into a first pattern region and a second pattern region based on a preset exposure precision, wherein the exposure precision of the first pattern region is lower than that of the second pattern region. The acquisition module 202 is configured to expose the photoresist region corresponding to the first pattern region by using a first exposure process, and expose the photoresist region corresponding to the second pattern region by using a second exposure process, so as to obtain a mask plate, wherein the exposure precision of the first exposure process is less than that of the second exposure process. The exposure module 203 is configured to expose the to-be-exposed substrate by using the mask plate.

[0071] It should be noted that the specific details of each module unit in the above hybrid exposure device have been described in detail in the above embodiment of the hybrid exposure method, and will not be repeated here.

[0072] In the application, the term "module" or "unit" refers to a computer program or part of a computer program with a predetermined function, which works with other related parts to achieve a predetermined target, and can be implemented entirely or partially by using software, hardware (such as processing circuit or memory) or combination thereof. Similarly, one processor (or multiple processors or memory) can be used to implement one or more modules or units. In addition, each module or unit can be part of an overall module or unit that includes the functions of the module or unit.

[0073] In an optional embodiment, the hybrid exposure device in the application can be implemented in a hardware manner, such as an exposure system or a component in the exposure system, for example, an integrated circuit or a chip. The hybrid exposure device can also be implemented in a software manner, such as an application installed in the exposure system.

[0074] The embodiment of the present application further provides an exposure system, comprising a memory and a processor; the memory stores a computer program which can run on the processor; the processor executes the computer program to realize the processes of the embodiment of the mixed exposure method and achieve the same technical effects. To avoid repetition, details are not described herein.

[0075] Optionally, the exposure system further comprises an exposure device which is controlled by the processor. The processor controls the action (such as the scanning path of the energy beam, the exposure timing, etc.) of the exposure device by calling the data in the memory to realize the processes of the embodiment of the mixed exposure method. The exposure device can be a combination of a first exposure device (such as a laser direct writing lithography machine, an inkjet printing exposure device, etc.) and a second exposure device (such as an electron beam direct writing exposure machine, a focused ion beam exposure device, etc.), or a device which can realize exposure processes with different precisions.

[0076] In an optional embodiment, referring to Figure 15 , Figure 15 is a structural schematic diagram of the exposure system provided by the embodiment of the present application. The exposure system 300 comprises a processor 301 and a memory 302. The memory 302 stores a computer program 303 which can run on the processor 301. The computer program 303 is executed by the processor 301 to realize the processes of the embodiment of the mixed exposure method and achieve the same technical effects. To avoid repetition, details are not described herein.

[0077] The embodiment of the present application further provides a computer readable storage medium which stores a computer program. The computer program is executed by the processor to realize the processes of the embodiment of the mixed exposure method and achieve the same technical effects. To avoid repetition, details are not described herein.

[0078] The processor can be the processor in the exposure system in the above-mentioned embodiments. The computer readable storage medium can be a computer readable only memory (ROM), a random access memory (RAM), a magnetic disc or an optical disc, etc.

[0079] Computer-readable media can include computer storage media and communication media. Computer storage media includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data. Computer storage media includes, but is not limited to, RAM, ROM, Erasable Programmable Read-Only Memory (EPROM), Electrically Erasable Programmable Read-Only Memory (EEPROM), flash memory or other solid state memory technology, CD-ROM, Digital Versatile Disc (DVD), or other optical storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices. Computer storage media is not limited to the above examples. It is therefore to be understood that any such changes, modifications, or additions are intended to be considered as being within the scope of this application.

[0080] The embodiment of the present application further provides a computer program product comprising a computer program which, when executed by a processor, implements the hybrid exposure method described above. The processor can be the processor in the exposure system in the above embodiment. The computer program, when executed by the processor, implements each process of the embodiment of the hybrid exposure method described above and achieves the same technical effects. To avoid repetition, no further description is given here.

[0081] It can be understood that in the detailed description of the present application, data related to the identity or characteristics of the user is involved. When the above embodiments of the present application are applied to specific products or technologies, the user's permission or consent is required, and the collection, use and processing of the relevant data need to comply with relevant laws, regulations and standards in the country and region.

[0082] In the description of the present specification, the description referring to the terms "certain embodiments", "in an optional embodiment", "exemplarily" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the present specification and the features of the different embodiments or examples without contradiction.

[0083] Any processes or methods described in the flow charts or otherwise described herein can be understood as representing code, code modules, or portions of code that include executable instructions for performing specific logical functions or steps, and the preferred embodiments of the application include additional implementations that can not be described in detail, such as can be understood by those of ordinary skill in the art, in which the functions described are performed by a different order of steps, or by substantially simultaneous execution of the steps, or by a different arrangement of the steps, or by a combination of these approaches, as will be understood by those of ordinary skill in the art.

[0084] While the embodiments of the application have been shown and described with reference to certain embodiments thereof, it will be understood by those of ordinary skill in the art that various changes, modifications, substitutions, and alterations can be made hereto without departing from the principles and spirit of the application, and it is intended that the application be limited only by the scope of the claims and the equivalents thereof.

Claims

1. A hybrid exposure method characterized by, The method comprises: based on a preset exposure accuracy, dividing a to-be-exposed pattern into a first pattern region and a second pattern region, wherein the exposure accuracy of the first pattern region is lower than the exposure accuracy of the second pattern region; exposing a photoresist region corresponding to the first pattern region using a first exposure process and exposing a photoresist region corresponding to the second pattern region using a second exposure process to obtain a mask plate, wherein the exposure accuracy of the first exposure process is lower than the exposure accuracy of the second exposure process; exposing a to-be-exposed substrate through the mask plate.

2. The hybrid exposure method according to claim 1, wherein The photoresist comprises a first photoresist and a second photoresist, the first photoresist is matched with the first exposure process, the second photoresist is matched with the second exposure process, the photoresist region corresponding to the first pattern region is composed of the first photoresist, and the photoresist region corresponding to the second pattern region is composed of the second photoresist.

3. The hybrid exposure method according to claim 2, wherein The method further comprises: adding an isolation layer between the first photoresist and the second photoresist during the interval between the exposure using the first exposure process and the exposure using the second exposure process.

4. The hybrid exposure method according to claim 3, wherein The method further comprises: exposing a photoresist region corresponding to the first pattern region using a first exposure process and exposing a photoresist region corresponding to the second pattern region using a second exposure process to obtain a mask plate, wherein the exposure accuracy of the first exposure process is lower than the exposure accuracy of the second exposure process. The method further comprises:

5. The hybrid exposure method according to claim 4, wherein exposing a photoresist region corresponding to the first pattern region using a first exposure process and exposing a photoresist region corresponding to the second pattern region using a second exposure process to obtain a mask plate, wherein the exposure accuracy of the first exposure process is lower than the exposure accuracy of the second exposure process. The method further comprises: depositing a material on the mixed photoresist pattern to obtain the mask plate.

6. The hybrid exposure method according to claim 1, wherein The method further comprises:

7. The hybrid exposure method according to claim 1, wherein forming a composite structure by plating a metal layer on the mixed photoresist pattern; 8. An exposure system characterized by comprising: removing the photoresist and the isolation layer in the composite structure respectively to obtain the mask plate.

9. A computer readable storage medium having stored thereon a computer program, characterized in that, The preset exposure accuracy is in the interval [500 nm, 2 um].

10. A computer program product, characterised in that, The first exposure process comprises a laser direct writing exposure process, and the second exposure process comprises an electron beam exposure process. The computer program is executed by the processor to implement the hybrid exposure method according to any one of claims 1-7. The computer program is executed by the processor to implement the hybrid exposure method according to any one of claims 1-7. The computer program is executed by the processor to implement the hybrid exposure method according to any one of claims 1-7.

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