High-low voltage coupling simulation test method and device, storage medium and platform

Abstract

The invention discloses a high-low voltage coupling simulation test method and device, a storage medium and a platform, and the method comprises the steps: building a high-voltage system simulation model, and extracting parasitic parameters of the high-voltage system simulation model; establishing a low-voltage system simulation model, and extracting parasitic parameters of the low-voltage system simulation model; establishing a high-low voltage crosstalk path model, and extracting parasitic parameters of the high-low voltage crosstalk path model; building a high-low voltage system crosstalk circuit model according to the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model, and introducing parasitic parameters of the high-voltage system simulation model, parasitic parameters of the low-voltage system simulation model and parasitic parameters of the high-low voltage crosstalk path model; and the high-low voltage system crosstalk circuit model is operated, and high-low voltage coupling simulation testing is carried out. Therefore, by establishing the crosstalk circuit model of the high-low voltage system, comprehensive and quantitative evaluation of the high-low voltage crosstalk characteristics of the electric drive system is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electrical simulation, in particular to a high-low voltage coupling simulation test method, a computer readable storage medium, a high-low voltage coupling simulation test device and a high-low voltage coupling simulation test platform. BACKGROUND

[0002] At present, the internal environment of the electric drive system of a new energy vehicle is complex, usually including high-voltage, high-current power components and low-voltage, high-precision control units. The high-voltage loop converts direct current into alternating current to drive the motor through the switching action of the power device, and the low-voltage loop mainly provides stable gate drive voltage for these power devices. However, the high-speed switching behavior of the power device will generate extremely high current and voltage change rates, which constitutes the main source of electromagnetic interference in the electric drive system. Electromagnetic interference propagates through conduction and radiation paths, seriously threatening the signal integrity of low-voltage sensitive control circuits, and may also lead to a decrease in system reliability and even functional failure. SUMMARY

[0003] The present application aims to at least solve one of the technical problems in the related art. To this end, the first object of the present application is to propose a high-low voltage coupling simulation test method, which can comprehensively and quantitatively evaluate the high-low voltage crosstalk characteristics of the electric drive system, so as to predict the conduction and radiation interference of the high-voltage loop on the low-voltage loop in the design stage, and guide the EMC design and optimization of the electric drive system.

[0004] The second object of the present application is to propose a computer readable storage medium.

[0005] The third object of the present application is to propose a high-low voltage coupling simulation test device.

[0006] The fourth object of the present application is to propose a high-low voltage coupling simulation test platform.

[0007] To achieve the above-mentioned objects, the high-low voltage coupling simulation test method according to the first aspect of the present application comprises: establishing a high-voltage system simulation model and extracting the parasitic parameters of the high-voltage system simulation model; establishing a low-voltage system simulation model and extracting the parasitic parameters of the low-voltage system simulation model; establishing a high-low voltage crosstalk path model and extracting the parasitic parameters of the high-low voltage crosstalk path model; according to the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model, building a high-low voltage system crosstalk circuit model, and introducing the parasitic parameters of the high-voltage system simulation model, the parasitic parameters of the low-voltage system simulation model and the parasitic parameters of the high-low voltage crosstalk path model; running the high-low voltage system crosstalk circuit model to perform high-low voltage coupling simulation test.

[0008] According to the high-low voltage coupling simulation test method provided in the embodiments of the present application, the high-low voltage system crosstalk circuit model is established, and the parasitic parameters of the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model are introduced, so as to accurately simulate the influence of high-frequency noise generated by the high-voltage power device in the switching process on the low-voltage sensitive circuit through the conduction coupling channel, and realize comprehensive and quantitative evaluation of the high-low voltage crosstalk characteristics of the electric drive system, thereby predicting the conduction and radiation interference of the high-voltage loop on the low-voltage loop in the design stage, and guiding the EMC design and optimization of the electric drive system.

[0009] In addition, the high-low voltage coupling simulation test method according to the above-mentioned embodiments of the present application can also have the following additional technical features: According to one embodiment of the present application, the high-low voltage crosstalk path model includes a capacitive coupling path model, an inductive coupling path model and a radiation coupling path model.

[0010] According to one embodiment of the present application, the high-voltage system simulation model includes a motor controller shell model, and establishing the high-voltage system simulation model includes: when the motor controller shell model is established, deleting invalid mechanical features of the motor controller shell model and retaining key electromagnetic features of the motor controller shell model, wherein the invalid mechanical features include reinforcing ribs, mounting holes, chamfers, grooves and character recognition, and the key electromagnetic features include shell holes and opening profiles.

[0011] According to one embodiment of the present application, the high-voltage system simulation model includes a bus capacitor and DC busbar model, and establishing the high-voltage system simulation model includes: when the bus capacitor and DC busbar model is established, deleting invalid mechanical features of the bus capacitor and DC busbar model and retaining key electromagnetic features of the bus capacitor and DC busbar model, wherein the invalid mechanical features include reinforcing ribs, mounting holes, chamfers, grooves and character recognition of the internal winding core, and the key electromagnetic features include external packaging size, electrode position and electrode mounting method.

[0012] According to one embodiment of the present application, the high-voltage system simulation model includes an IGBT model, and establishing the high-voltage system simulation model includes: when the IGBT model is established, deleting invalid mechanical features of the IGBT model and retaining key electromagnetic features of the IGBT model, wherein the invalid mechanical features include reinforcing ribs, mounting holes, chamfers, grooves and character recognition of the internal structure of the chip, and the key electromagnetic features include external packaging structure, terminal layout, heat dissipation substrate and mounting interface.

[0013] According to one embodiment of the present application, the high-voltage system simulation model includes a test bench model, and establishing the high-voltage system simulation model includes: when the test bench model is established, restoring the geometric features, material properties and surface treatment process of the bench metal structure, and constructing the internal circuit structure of the LISN network, the layout of components and the mounting connection relationship thereof with the bench.

[0014] According to one embodiment of the present application, the establishment of the low-voltage system simulation model comprises: checking and confirming the laminated structure, via characteristics and component layout of the PCB, and focusing on screening the key electrical networks and reducing the non-key electrical networks, wherein the key electrical networks include the power supply network, the ground loop and the sensitive signal.

[0015] To achieve the above-mentioned purpose, the computer readable storage medium according to the second aspect of the present application stores a high-low voltage coupling simulation test program, and the program is executed by the processor to realize the high-low voltage coupling simulation test method.

[0016] The computer readable storage medium according to the embodiment of the present application can realize comprehensive and quantitative evaluation of the high-low voltage crosstalk characteristics of the electric drive system by executing the high-low voltage coupling simulation test program stored thereon, so that the conducted and radiated interference of the high-voltage loop on the low-voltage loop can be predicted in the design stage, and the EMC design and optimization of the electric drive system can be guided accordingly.

[0017] To achieve the above-mentioned purpose, the high-low voltage coupling simulation test device according to the third aspect of the present application comprises: a high-voltage system modeling module, configured to establish a high-voltage system simulation model and extract parasitic parameters of the high-voltage system simulation model; a low-voltage system modeling module, configured to establish a low-voltage system simulation model and extract parasitic parameters of the low-voltage system simulation model; a crosstalk path modeling module, configured to establish a high-low voltage crosstalk path model and extract parasitic parameters of the high-low voltage crosstalk path model; a high-low voltage system crosstalk circuit building module, configured to build a high-low voltage system crosstalk circuit model according to the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model, and introduce the parasitic parameters of the high-voltage system simulation model, the parasitic parameters of the low-voltage system simulation model and the parasitic parameters of the high-low voltage crosstalk path model; and a simulation module, configured to run the high-low voltage system crosstalk circuit model to perform high-low voltage coupling simulation test.

[0018] The high-low voltage coupling simulation test device according to the embodiment of the present application can accurately simulate the influence of the high-frequency noise generated by the high-voltage power device in the switching process on the low-voltage sensitive circuit through the conducted coupling path by establishing the high-low voltage system crosstalk circuit model and introducing the parasitic parameters of the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model, so as to realize comprehensive and quantitative evaluation of the high-low voltage crosstalk characteristics of the electric drive system, thereby predicting the conducted and radiated interference of the high-voltage loop on the low-voltage loop in the design stage, and guiding the EMC design and optimization of the electric drive system accordingly.

[0019] To achieve the above-mentioned purpose, the high-low voltage coupling simulation test platform according to the fourth aspect of the present application comprises the high-low voltage coupling simulation test device according to the foregoing embodiments.

[0020] According to the high-low voltage coupling simulation test platform of the embodiment of the present application, the high-low voltage coupling simulation test device is adopted, so that the high-low voltage crosstalk characteristics of the electric drive system can be comprehensively and quantitatively evaluated, so that the conduction and radiation interference of the high-voltage loop on the low-voltage loop can be predicted in the design stage, and the EMC design and optimization of the electric drive system can be guided.

[0021] Additional aspects and advantages of the present application will be described in the following description and become apparent from the following description, or will be learned by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 A flowchart of a high-low voltage coupling simulation test method according to an embodiment of the present application is shown. Figure 2 A circuit schematic diagram of a high-low voltage crosstalk capacitive coupling path according to an embodiment of the present application is shown. Figure 3 A block diagram of a high-low voltage coupling simulation test device according to an embodiment of the present application is shown. Figure 4 A block diagram of a high-low voltage coupling simulation test platform according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0023] Embodiments of the present application are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by reference to the accompanying drawings are exemplary and are intended to explain the present application, and cannot be understood as limiting the present application.

[0024] The high-low voltage coupling simulation test method, computer readable storage medium, high-low voltage coupling simulation test device and high-low voltage coupling simulation test platform of the embodiments of the present application are described below with reference to the accompanying drawings.

[0025] Figure 1 A flowchart of a high-low voltage coupling simulation test method according to an embodiment of the present application is shown.

[0026] Specifically, in some embodiments of the present application, referring to Figure 1 As shown in the high-low voltage coupling simulation test method, comprising: S1, a high-voltage system simulation model is established, and the parasitic parameters of the high-voltage system simulation model are extracted.

[0027] Specifically, in this embodiment of the present application, the high-voltage system simulation model comprises a motor controller housing model, a bus capacitor and DC busbar model, an IGBT model and a test bench model, after the establishment of the high-voltage system simulation model, the model is imported into the HFSS software, and appropriate material properties are assigned to each component in the model to clearly define the electromagnetic properties of each component in the high-voltage system simulation model, then, the port boundary conditions are accurately set at the corresponding electrical interfaces, and the frequency domain solver parameters are configured, so as to perform electromagnetic field simulation on the high-voltage system simulation model, and extract the parasitic parameters of the high-voltage system.

[0028] It should be noted that the electromagnetic behavior of the high-voltage system accurately obtained by electromagnetic calculation in the HFSS software can be packaged as a high-fidelity "black box" component, which can be reused as a sub-circuit module and embedded into a larger power electronic system, so that when performing larger-scale electromagnetic simulation, it is not necessary to repeatedly model and simulate test this type of high-voltage system.

[0029] S2, a low-voltage system simulation model is established, and the parasitic parameters of the low-voltage system simulation model are extracted.

[0030] Specifically, in this embodiment of the present application, after the establishment of the low-voltage system simulation model, the PCB model of the low-voltage system simulation model is imported into the Q3D environment, the model is set, and the static electromagnetic field solver is used for simulation calculation to extract the parasitic parameters of the low-voltage system simulation model, wherein setting the model includes defining the source port and sink port of each network, setting the copper foil conductivity, dielectric constant of dielectric layer and other material properties, and adaptively dividing the grid for complex structures to ensure the grid accuracy of the key area.

[0031] S3, a high-low voltage crosstalk path model is established, and the parasitic parameters of the high-low voltage crosstalk path model are extracted.

[0032] Specifically, in this embodiment of the present application, the high-low voltage crosstalk path model can include any one or more of a capacitive coupling path model, an inductive coupling path model and a radiation coupling path model.

[0033] Next, taking the capacitive coupling path as an example, the establishment process of the high-low voltage crosstalk path model of the embodiment of the present application and the extraction process of the parasitic parameters of the high-low voltage crosstalk path model are described as follows: Specifically, as Figure 2As shown, the electromagnetic interference generated by the high-voltage IGBT is transmitted into the low-voltage MOSFET through the coupling capacitor C1, and then sequentially through the low-voltage wiring harness, the low-voltage LISN, the ground copper plate, the motor controller shell and the bus capacitor, and finally returns to the high-voltage IGBT. In this embodiment of the present application, first, the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model are imported into the HFSS software, and appropriate material properties are assigned to each component to establish the high-low voltage crosstalk path model. Then, ports are set at the pins of the MOSFET on the low-voltage system side and the output terminals of the IGBT three-phase module on the high-voltage system side. Subsequently, the solver is configured and the simulation is performed, and the parasitic parameters of the high-low voltage crosstalk path model are extracted.

[0034] S4, according to the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model, a high-low voltage system crosstalk circuit model is built, and the parasitic parameters of the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model are introduced.

[0035] Specifically, in this embodiment of the present application, a high-low voltage system crosstalk circuit model for high-low voltage coupling simulation test is built through the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model, and the parasitic parameters of the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model are introduced, so as to accurately simulate the influence of the high-frequency noise generated by the high-voltage power device in the switching process on the low-voltage sensitive circuit through the conduction coupling path.

[0036] S5, running the high-low voltage system crosstalk circuit model, performing high-low voltage coupling simulation test.

[0037] Specifically, in this embodiment of the present application, by running the high-low voltage system crosstalk circuit model, the working state between the high-voltage system simulation model and the low-voltage system simulation model is simulated under the high-low voltage crosstalk path model, thereby realizing comprehensive and quantitative evaluation of the high-low voltage crosstalk characteristics of the electric drive system, so that the conduction and radiation interference of the high-voltage loop on the low-voltage loop can be predicted in the design stage, and the EMC design and optimization of the electric drive system can be guided.

[0038] Further, in some embodiments of the present application, the high-voltage system simulation model includes a motor controller shell model, and establishing the high-voltage system simulation model includes: when establishing the motor controller shell model, deleting invalid mechanical features of the motor controller shell model and retaining key electromagnetic features of the motor controller shell model, wherein the invalid mechanical features include reinforcing ribs, mounting holes, chamfers, grooves and character recognition, and the key electromagnetic features include shell holes and opening profiles.

[0039] Specifically, in this embodiment of the present application, the motor controller housing model is constructed based on the actual size of the product, and the mechanical structure details are simplified in the modeling of the motor controller housing to greatly reduce the model complexity, improve the calculation efficiency and accuracy, and achieve the balance of calculation efficiency and simulation accuracy.

[0040] More specifically, in this embodiment of the present application, in the modeling of the motor controller housing, the ineffective mechanical features of the motor controller housing model, such as the reinforcing ribs, mounting holes, chamfers, grooves and character recognition, which have little effect on the high-low voltage coupling simulation, can be deleted, and the key electromagnetic features of the motor controller housing model, such as the shell hole and opening profile, which have greater effect on the high-low voltage coupling simulation, are retained.

[0041] Further, in some embodiments of the present application, the high-voltage system simulation model includes a bus capacitor and a DC busbar model, and the establishment of the high-voltage system simulation model includes: in the establishment of the bus capacitor and the DC busbar model, deleting the ineffective mechanical features of the bus capacitor and the DC busbar model and retaining the key electromagnetic features of the bus capacitor and the DC busbar model, wherein the ineffective mechanical features include the reinforcing ribs, mounting holes, chamfers, grooves and character recognition of the internal winding core, and the key electromagnetic features include the external packaging size, electrode position and electrode mounting mode.

[0042] Specifically, in this embodiment of the present application, the bus capacitor and the DC busbar model are constructed based on the actual size of the product, and the mechanical structure details are simplified in the modeling of the bus capacitor and the DC busbar to greatly reduce the model complexity, improve the calculation efficiency and accuracy, and achieve the balance of calculation efficiency and simulation accuracy.

[0043] More specifically, in this embodiment of the present application, in the modeling of the bus capacitor and the DC busbar, the ineffective mechanical features of the internal winding core of the bus capacitor and the DC busbar model, such as the reinforcing ribs, mounting holes, chamfers, grooves and character recognition, which have little effect on the high-low voltage coupling simulation, can be deleted, and the key electromagnetic features of the bus capacitor and the DC busbar model, such as the external packaging size, electrode position and electrode mounting mode, which have greater effect on the high-low voltage coupling simulation, are retained.

[0044] Further, in some embodiments of the present application, the high-voltage system simulation model includes an IGBT model, and the establishment of the high-voltage system simulation model includes: in the establishment of the IGBT model, deleting the ineffective mechanical features of the IGBT model and retaining the key electromagnetic features of the IGBT model, wherein the ineffective mechanical features include the reinforcing ribs, mounting holes, chamfers, grooves and character recognition of the internal structure of the chip, and the key electromagnetic features include the external packaging structure, terminal layout, heat dissipation substrate and mounting interface.

[0045] Specifically, in this embodiment of the present application, the IGBT model is constructed based on the actual size of the product, and the mechanical structure details thereof are simplified in a targeted manner when the IGBT model is constructed, so as to greatly reduce the model complexity, improve the calculation efficiency and accuracy, and realize the balance between the calculation efficiency and the simulation accuracy.

[0046] More specifically, in this embodiment of the present application, when the IGBT model is constructed, the reinforcing ribs, mounting holes, chamfers, grooves and text recognition and other invalid mechanical features of the chip internal structure of the IGBT model, which have little influence on the high-low voltage coupling simulation, can be deleted, and the external packaging structure, terminal layout, heat dissipation substrate and mounting interface and other key electromagnetic features of the IGBT model, which have greater influence on the high-low voltage coupling simulation, are retained.

[0047] Further, in some embodiments of the present application, the high-voltage system simulation model includes a test bench model, and the establishment of the high-voltage system simulation model includes: when the test bench model is established, restoring the geometric features, material properties and surface treatment process of the bench metal structure, and constructing the internal circuit structure, component layout and mounting connection relationship thereof with the bench of the LISN network.

[0048] Specifically, in this embodiment of the present application, the test bench model includes a test bench main body, a line impedance stabilization network (LISN) and an insulating pad, and when the test bench model is constructed, a complete virtual test environment is established through the three-dimensional electromagnetic field simulation software ANSYS SPACECLAIM, and the geometric features, material properties and surface treatment process of the bench metal structure are accurately restored in the modeling process to ensure that the grounding impedance characteristics thereof are consistent with the real laboratory environment, and at the same time, the internal circuit structure, component layout and mounting connection relationship thereof with the bench of the LISN network are constructed in detail to accurately simulate the propagation, reflection and coupling effects of electromagnetic waves in the actual test environment.

[0049] Further, in some embodiments of the present application, the establishment of the low-voltage system simulation model includes: checking and confirming the laminated structure, via hole characteristics and component layout of the PCB, and focusing on screening the key electrical networks and reducing the non-key electrical networks, wherein the key electrical networks include the power network, the ground loop and the sensitive signal.

[0050] Specifically, in this embodiment of the present application, in the modeling process of the low-voltage system simulation model, a systematic modeling method needs to be adopted for the complexity of the low-voltage system PCB wiring in the actual project, and more specifically, in this embodiment of the present application, the layer structure, via characteristics and component layout of the PCB are comprehensively checked and confirmed in the ANSYS SIwave platform, and the key electrical networks such as the power supply network, the ground loop and the sensitive signal are mainly screened to accurately simulate the low-voltage system PCB wiring in the actual project, improve the accuracy of the simulation, and at the same time, the non-key networks are reasonably reduced, and the multi-layer PCB structure is simplified as a thicknessless plane to reduce the model complexity and improve the calculation efficiency.

[0051] and the multi-layer PCB structure is simplified as a thicknessless plane, and finally the optimized layout model is exported to the Q3D environment for deep processing and parasitic parameter extraction of the PCB In summary, according to the high-low voltage coupling simulation test method of the embodiment of the present application, the high-low voltage system crosstalk circuit model is established, and the parasitic parameters of the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model are introduced, so as to accurately simulate the influence of the high-frequency noise generated by the high-voltage power device in the switching process on the low-voltage sensitive circuit through the conduction coupling channel, realize comprehensive and quantitative evaluation of the high-low voltage crosstalk characteristics of the electric drive system, and thus predict the conduction and radiation interference of the high-voltage loop on the low-voltage loop in the design stage, and guide the EMC design and optimization of the electric drive system.

[0052] Based on the high-low voltage coupling simulation test method of the aforementioned embodiment of the present application, the embodiment of the present application further proposes a computer readable storage medium having a high-low voltage coupling simulation test program stored thereon, and the program is executed by a processor to realize the high-low voltage coupling simulation test method of the aforementioned embodiment of the present application.

[0053] It should be understood that the specific embodiments of the computer readable storage medium of the present application can refer to the specific embodiments of the high-low voltage coupling simulation test method of the aforementioned embodiment of the present application, and to reduce redundancy, it will not be described here.

[0054] In summary, according to the computer readable storage medium of the embodiment of the present application, through the high-low voltage coupling simulation test program stored thereon, the high-low voltage crosstalk characteristics of the electric drive system can be comprehensively and quantitatively evaluated, so as to predict the conduction and radiation interference of the high-voltage loop on the low-voltage loop in the design stage, and guide the EMC design and optimization of the electric drive system.

[0055] Figure 3 The block diagram of the high-low voltage coupling simulation test device according to the embodiment of the present application is shown.

[0056] Specifically, in some embodiments of the present application, reference is made toFigure 3 As shown, the high-low voltage coupling simulation test device 100 comprises: The high-voltage system modeling module 10, the low-voltage system modeling module 20, the crosstalk path modeling module 30, the high-low voltage system crosstalk circuit modeling module 40, and the simulation module 50.

[0057] The high-voltage system modeling module 10 is configured to establish a high-voltage system simulation model and extract parasitic parameters of the high-voltage system simulation model; the low-voltage system modeling module 20 is configured to establish a low-voltage system simulation model and extract parasitic parameters of the low-voltage system simulation model; the crosstalk path modeling module 30 is configured to establish a high-low voltage crosstalk path model and extract parasitic parameters of the high-low voltage crosstalk path model; the high-low voltage system crosstalk circuit modeling module 40 is configured to establish a high-low voltage system crosstalk circuit model according to the high-voltage system simulation model, the low-voltage system simulation model, and the high-low voltage crosstalk path model, and introduce the parasitic parameters of the high-voltage system simulation model, the parasitic parameters of the low-voltage system simulation model, and the parasitic parameters of the high-low voltage crosstalk path model; and the simulation module 50 is configured to run the high-low voltage system crosstalk circuit model to perform high-low voltage coupling simulation testing.

[0058] Further, the high-voltage system modeling module 10 is specifically configured to, when establishing a motor controller shell model, delete invalid mechanical features of the motor controller shell model and retain key electromagnetic features of the motor controller shell model, wherein the invalid mechanical features include reinforcing ribs, mounting holes, chamfers, grooves, and text recognition, and the key electromagnetic features include shell holes and opening contours.

[0059] Further, the high-voltage system modeling module 10 is specifically configured to, when establishing a bus capacitor and DC busbar model, delete invalid mechanical features of the bus capacitor and DC busbar model and retain key electromagnetic features of the bus capacitor and DC busbar model, wherein the invalid mechanical features include reinforcing ribs, mounting holes, chamfers, grooves, and text recognition of the internal winding core, and the key electromagnetic features include external packaging dimensions, electrode positions, and electrode mounting methods.

[0060] Further, the high-voltage system modeling module 10 is specifically configured to, when establishing an IGBT model, delete invalid mechanical features of the IGBT model and retain key electromagnetic features of the IGBT model, wherein the invalid mechanical features include reinforcing ribs, mounting holes, chamfers, grooves, and text recognition of the internal structure of the chip, and the key electromagnetic features include external packaging structures, terminal layouts, heat dissipation substrates, and mounting interfaces.

[0061] Further, the high-voltage system modeling module 10 is specifically configured to, when establishing a test bench model, restore the geometric features, material properties, and surface treatment processes of the bench metal structure, and construct the internal circuit structure of the LISN network, the layout of components and devices, and their installation connection relationship with the bench.

[0062] Further, the low-voltage system modeling module 20 is specifically configured to check and confirm the PCB stack structure, via characteristics and component layout, and focus on screening key electrical networks and reducing non-key electrical networks, wherein the key electrical networks include power supply networks, ground loops and sensitive signals.

[0063] It should be understood that the specific embodiments of the high-low voltage coupling simulation test device of the present application can refer to the specific embodiments of the high-low voltage coupling simulation test method of the aforementioned embodiments of the present application, and to reduce redundancy, will not be repeated here.

[0064] In summary, according to the high-low voltage coupling simulation test device of the embodiments of the present application, by establishing a high-low voltage system crosstalk circuit model, and introducing the parasitic parameters of the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model, the influence of the high-frequency noise generated by the high-voltage power device in the switching process on the low-voltage sensitive circuit through the conduction coupling path can be accurately simulated, and the high-low voltage crosstalk characteristics of the electric drive system can be comprehensively and quantitatively evaluated, so that the conduction and radiation interference of the high-voltage loop on the low-voltage loop can be predicted in the design stage, and the EMC design and optimization of the electric drive system can be guided.

[0065] Figure 4 The block diagram of the high-low voltage coupling simulation test platform according to the embodiments of the present application is shown.

[0066] Specifically, in some embodiments of the present application, referring to Figure 4 As shown in the figure, the high-low voltage coupling simulation test platform 1000 includes the high-low voltage coupling simulation test device 100 of the above-mentioned embodiments of the present application.

[0067] It should be understood that the specific embodiments of the high-low voltage coupling simulation test platform 1000 of the present application can refer to the specific embodiments of the high-low voltage coupling simulation test device of the aforementioned embodiments of the present application, and to reduce redundancy, will not be repeated here.

[0068] In summary, according to the high-low voltage coupling simulation test platform of the embodiments of the present application, by using the aforementioned high-low voltage coupling simulation test device, the high-low voltage crosstalk characteristics of the electric drive system can be comprehensively and quantitatively evaluated, so that the conduction and radiation interference of the high-voltage loop on the low-voltage loop can be predicted in the design stage, and the EMC design and optimization of the electric drive system can be guided.

[0069] It is to be appreciated that the above description and the examples that follow are intended to be illustrative only and that changes can be made to the description, either functionally or chronologically, as well as changes being made concerning the order of implementation. The logic and / or steps represented in the flow diagrams and / or described herein can be considered as a sequence of executable instructions, and can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For purposes of this specification, a "computer-readable medium" can be any apparatus that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. The computer-readable medium can be, for example, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system (or apparatus) or a propagation medium. More specific examples (a non-exhaustive list) of the computer-readable medium include the following: an electrical connection (electronic) having one or more wires, a portable computer diskette (magnetic), a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber (optical), and a portable compact disc read-only memory (CDROM). Note that the computer-readable medium can even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, for example via the optical scanner of a device or device or via an intermediary, such as a facility bureau, then compiled, interpreted, or processed in a suitable manner if necessary, and then stored in a computer storage medium.

[0070] It should be understood that aspects of the application can be implemented in hardware, software, firmware or combinations thereof. In the above embodiments, various steps or methods can be implemented in software or firmware that is stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any of the following technologies, known in the art, or combinations thereof, can be used: a discrete logic circuit having logic gates for implementing logic functions upon data signals, an application specific integrated circuit having appropriate combinational logic gates, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0071] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Also, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in an appropriate manner.

[0072] In the description of the application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the application.

[0073] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.

[0074] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0075] In the present application, unless otherwise explicitly specified and limited, the first feature "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0076] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as a limitation on the present application, and those skilled in the art can make changes, modifications, replacements and variations to the above embodiments within the scope of the present application.

Claims

1. A high-low voltage coupling simulation test method, characterized in that, The method comprises: establishing a high-voltage system simulation model and extracting parasitic parameters of the high-voltage system simulation model; establishing a low-voltage system simulation model and extracting parasitic parameters of the low-voltage system simulation model; establishing a high-low voltage crosstalk path model and extracting parasitic parameters of the high-low voltage crosstalk path model; building a high-low voltage system crosstalk circuit model according to the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model, and introducing the parasitic parameters of the high-voltage system simulation model, the parasitic parameters of the low-voltage system simulation model and the parasitic parameters of the high-low voltage crosstalk path model; running the high-low voltage system crosstalk circuit model to perform high-low voltage coupling simulation test.

2. The high-low voltage coupling emulation test method of claim 1, wherein, The high-low voltage crosstalk path model comprises a capacitive coupling path model, an inductive coupling path model and a radiation coupling path model.

3. The high-low voltage coupling emulation test method of claim 2, wherein, The high-voltage system simulation model comprises a motor controller shell model, and the establishment of the high-voltage system simulation model comprises: When the motor controller shell model is established, invalid mechanical features of the motor controller shell model are deleted and key electromagnetic features of the motor controller shell model are retained, wherein the invalid mechanical features comprise reinforcing ribs, mounting holes, chamfers, grooves and character recognition, and the key electromagnetic features comprise shell holes and opening profiles.

4. The high-low voltage coupling emulation test method of claim 2, wherein, The high-voltage system simulation model comprises a bus capacitor and DC busbar model, and the establishment of the high-voltage system simulation model comprises: When the bus capacitor and DC busbar model is established, invalid mechanical features of the bus capacitor and DC busbar model are deleted and key electromagnetic features of the bus capacitor and DC busbar model are retained, wherein the invalid mechanical features comprise reinforcing ribs, mounting holes, chamfers, grooves and character recognition of the internal winding core, and the key electromagnetic features comprise external packaging size, electrode position and electrode mounting mode.

5. The high-low voltage coupling emulation test method of claim 2, wherein, The high-voltage system simulation model comprises an IGBT model, and the establishment of the high-voltage system simulation model comprises: When the IGBT model is established, invalid mechanical features of the IGBT model are deleted and key electromagnetic features of the IGBT model are retained, wherein the invalid mechanical features comprise reinforcing ribs, mounting holes, chamfers, grooves and character recognition of the internal structure of the chip, and the key electromagnetic features comprise external packaging structure, terminal layout, heat dissipation substrate and mounting interface.

6. The high-low voltage coupling emulation test method of claim 3, wherein, The high-voltage system simulation model comprises a test bench model, and the establishment of the high-voltage system simulation model comprises: When the test bench model is established, the geometric features, material properties and surface treatment process of the bench metal structure are restored, and the internal circuit structure of the LISN network, the layout of the components and the mounting connection relationship thereof with the bench are constructed.

7. The high-low voltage coupling emulation test method of claim 2, wherein, The establishment of the low-voltage system simulation model comprises: The laminated structure, via hole characteristics and component layout of the PCB are checked and confirmed, and key electrical networks are screened and non-key electrical networks are reduced, wherein the key electrical networks comprise power supply networks, ground loops and sensitive signals.

8. A computer readable storage medium, characterized in that, The high-low voltage coupling simulation test program is stored thereon, and the program is executed by the processor to implement the high-low voltage coupling simulation test method of any one of claims 1-7. The high-low voltage coupling simulation test program is stored thereon, and the program is executed by the processor to implement the high-low voltage coupling simulation test method of any one of claims 1-7.

9. A high-low voltage coupling simulation test device, characterized in that, The device comprises: a high-voltage system modeling module, configured to establish a high-voltage system simulation model and extract parasitic parameters of the high-voltage system simulation model; a low-voltage system modeling module, configured to establish a low-voltage system simulation model and extract parasitic parameters of the low-voltage system simulation model; a crosstalk path modeling module, configured to establish a high-low voltage crosstalk path model and extract parasitic parameters of the high-low voltage crosstalk path model; a high-low voltage system crosstalk circuit modeling module, configured to establish a high-low voltage system crosstalk circuit model according to the high-voltage system simulation model, the low-voltage system simulation model and the high-low voltage crosstalk path model, and introduce the parasitic parameters of the high-voltage system simulation model, the parasitic parameters of the low-voltage system simulation model and the parasitic parameters of the high-low voltage crosstalk path model; a simulation module, configured to run the high-low voltage system crosstalk circuit model to perform high-low voltage coupling simulation testing.

10. A high-low voltage coupling simulation test platform, characterized in that, The platform comprises the high-low voltage coupling simulation testing device of claim 9.

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