Combined lens system of ion implanter and ion beam current adjusting method

Abstract

The invention discloses a combined lens system of an ion implanter and an ion beam current adjusting method. The system comprises an industrial personal computer, an ADIO controller, a first high-voltage power supply, a second high-voltage power supply, a focusing electrode lens and a deflection electrode device. The industrial personal computer is respectively connected with the first high-voltage power supply and the second high-voltage power supply through an ADIO controller; the focusing electrode lens is connected with the first high-voltage power supply; the deflection electrode device is connected with the second high-voltage power supply; the focusing electrode lens is used for applying electric field force to the ion beam in the horizontal direction to realize focusing; the deflection electrode device is used for applying electric field force to the ion beam in the vertical direction so as to achieve deflection. The method has the advantages of improving the beam concentration ratio and stability and the like.

Description

Technical Field

[0001] This invention relates to the field of ion beam technology, specifically to a combined lens system for an ion implanter and a method for adjusting the ion beam current. Background Technology

[0002] In short, integrated circuit chip manufacturing is the process of fabricating components onto extremely small semiconductor chips. Typically, completing the manufacturing process of an integrated circuit chip requires hundreds of steps using dozens of different process equipment. A typical process line includes processes such as exposure, etching, ion implantation, oxidation, and coating, which are repeated multiple times. Ion implantation is a crucial step in chip manufacturing, using an ion implanter for ion doping. With rapid technological advancements, market demands for miniaturized chips, more integrated transistors, and lower energy consumption necessitate improvements in ion implantation processes to meet market demands and drive rapid technological progress. The working principle of ion implantation involves ionizing atoms of a specific element and accelerating them in an electric field to achieve high speeds before injecting them into the wafer surface to alter the physical or chemical properties of the wafer material. Ion implanters are categorized by energy level into medium-current, high-current, and high-energy ion implanters. Each model has specific acceleration modes, including high-energy and low-energy modes, achieved through a special potential switching device. Under high-energy mode conditions, ion kinetic energy is relatively large, ion transport time is short, divergence is small, and utilization rate is high; under low-energy mode conditions, ion kinetic energy is relatively small, ion transport time is long, and the ion repulsion force is large, resulting in beam divergence and low utilization rate.

[0003] The ion implantation process consists of three stages: ion beam generation, ion beam selection, and ion beam detection. In the ion beam generation stage, electrons collide with atoms in the ion source arc chamber to generate positively charged ions. These ions are then extracted using high-voltage electrodes to form a beam. At this stage, the ion beam is quite diverse, carrying inconsistent charges and containing various atoms and electrons, far from being usable. Electrons are filtered out by suppressing the electric field, and ions with the desired charge are selected using a magnetic field. At this point, the beam is ready for use. After the machine uses a detection device to test important parameters such as beam energy and angle, implantation can begin. Currently, low-energy ion implanters suffer from slow ion velocity, severe beam divergence, and large beam spots, leading to beam center displacement.

[0004] An ion implanter consists of three main modules: a high-pressure chamber, a beamline region, and a target chamber. The high-pressure chamber primarily generates the ion beam, performs initial ion beam screening, and adjusts the beam's state. The beamline region further screens the ion beam, removing ions with incorrect energy or charge using magnetic and electric fields, and suppressing doped electrons in the beam. These electrons are then guided to the ground through protective graphite, resulting in a pure ion beam suitable for implantation. The target chamber uses a graphite collection cup to collect and analyze the beam to be implanted. Ion implantation can proceed when all process parameters meet the requirements. If the beam does not meet the conditions, the power supply and magnetic field parameters in the high-pressure chamber need to be adjusted. High-energy ion beams have higher kinetic energy, resulting in a more concentrated beam and better beam performance. In contrast, low-energy ion beams from ion implanters exhibit significant beam divergence due to slower ion velocity, leading to a larger beam spot and a shift in the beam center position. The existing ion implanter components are difficult to adjust the beam current, making it impossible to achieve a good beam current state. The beam current utilization rate is low, which makes it impossible to realize some processes of the machine and reduces the machine's operating efficiency. Summary of the Invention

[0005] To address the technical problems existing in the prior art, this invention provides a combined lens system for an ion implanter and an ion beam adjustment method to improve beam concentration and stability.

[0006] To solve the above-mentioned technical problems, the technical solution proposed by this invention is as follows: A combined lens system for an ion implanter includes an industrial control computer, an ADIO controller, a first high-voltage power supply, a second high-voltage power supply, a focusing electrode lens, and a deflection electrode device. The industrial control computer is connected to the first high-voltage power supply and the second high-voltage power supply respectively via an ADIO controller. The focusing electrode lens is connected to the first high-voltage power supply; the deflecting electrode device is connected to the second high-voltage power supply. The focusing electrode lens is used to apply an electric field force to the ion beam in the horizontal direction to achieve focusing; the deflecting electrode device is used to apply an electric field force to the ion beam in the vertical direction to achieve deflection.

[0007] As a further improvement to the above technical solution: The focusing electrode lens includes a high-voltage port, an ion beam optical path graphite, a focusing electrode surface, a first electrode fixing post, and a second electrode fixing post. The focusing electrode surface has a circular structure and is made of high-purity graphite. The high-voltage port is located on the focusing electrode surface and is used to connect to a high-voltage power supply. The ion beam optical path graphite is integrally formed with the focusing electrode surface. The first electrode fixing post and the second electrode fixing post are located on the focusing electrode surface and are used to fix the focusing electrode lens as a whole in the optical path cavity.

[0008] The deflection electrode device includes a pre-filter aperture flange, a high-voltage connection device, a pre-filter aperture frame, a positive high-voltage electrode, and a low-potential electrode. The high-voltage connection device is installed on the pre-filter aperture flange and is used to conduct high voltage from the atmospheric side to the vacuum side; The pre-filter aperture frame is installed on the vacuum side of the pre-filter aperture flange. The positive high-potential electrode and the low-potential electrode are both located in the pre-filter aperture frame and are connected to the high potential and ground potential respectively to form a deflection electric field.

[0009] A positive high electrode support plate is installed on the pre-filter aperture frame, and the positive high electrode is connected to the positive high electrode support plate through a first insulating magnetic column and a second insulating magnetic column.

[0010] The pre-filter aperture flange is connected to the pre-filter aperture frame by a first screw and a second screw, both of which are cross-head vacuum screws.

[0011] The positive electrode is connected to a high-voltage power supply via a curved conductive rod.

[0012] The positive electrode support plate is equipped with a protective high-purity graphite block to absorb sputtered ions and prevent ions from bombarding the curved conductive rod.

[0013] The ADIO controller and the industrial computer use dual-loop fiber optic communication, including a main loop and a secondary loop, to ensure communication redundancy.

[0014] The first high-voltage power supply has an output voltage range of -20KV to 0 and an accuracy of 0.01%; the second high-voltage power supply has an output voltage range of 0 to 60KV and an accuracy of 0.01%.

[0015] This invention also discloses an ion beam adjustment method based on a combined lens system of an ion implanter as described above, comprising the following steps: S1. Start the system, connect the power supply and cooling water circulation; S2. Apply the second high-voltage power supply voltage and adjust the beam deflection angle; S3. Adjust the voltage of the second high-voltage power supply in stages to find the optimal deflection angle; S4. Apply the first high-voltage power supply voltage and adjust the beam focusing state; S5. Adjust the first high-voltage power supply voltage in stages to find the optimal focusing state; S6. Simultaneously fine-tune the voltages of the first and second high-voltage power supplies to maximize beam utilization. S7. Save the parameters and run the system.

[0016] Compared with the prior art, the advantages of the present invention are as follows: This invention effectively solves key technical challenges in ion implanters during low-energy modes, such as beam widening, center shift, and low utilization caused by slow ion velocity and severe beam divergence, by integrating a focusing electrode lens and a deflection electrode device, along with a high-precision dual high-voltage power supply and intelligent industrial control. The system applies an electric field in the horizontal direction through the focusing electrode to enhance the horizontal ion velocity, achieving precise beam focusing and significantly reducing the beam size. Simultaneously, the deflection electrode applies a controllable electric field in the vertical direction to adjust the vertical ion velocity and correct the beam deflection angle, bringing it back to the transmission center axis. The synergistic effect of these two components simultaneously optimizes the beam's spatial shape and transmission trajectory, thereby significantly improving beam concentration and stability.

[0017] This system boasts high-precision voltage regulation capabilities (power supply accuracy up to 0.01%). Combined with a dual-loop fiber optic communication redundancy design and modular component structure, it not only achieves remote precision control and high system reliability but also facilitates installation, maintenance, and industrialization. In practical applications, this system maximizes the utilization of low-energy ion beams, improves beam injection efficiency and uniformity in the beamline region, thereby enhancing chip manufacturing process yield and overall equipment performance. It is particularly suitable for applications in high-end integrated circuit manufacturing with stringent ion implantation precision requirements. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the control principle of the combined lens system in an embodiment of the present invention.

[0019] Figure 2 This is a schematic diagram of the component layout of the combined lens of the present invention in a specific application.

[0020] Figure 3 This is a front view of the focusing lens of the present invention in a specific application.

[0021] Figure 4 This is a side view of the focusing lens of the present invention in a specific application.

[0022] Figure 5 This is a front view of the electro-lens of the present invention in a specific application.

[0023] Figure 6 This is a top view of the electro-lens of the present invention in a specific application.

[0024] Figure 7 This is one of the rear views of the electro-lens of the present invention in a specific application.

[0025] Figure 8 This is a second rear view of the electro-lens of the present invention in a specific application.

[0026] Figure 9 This refers to the beam deflection direction of the combined lens of the present invention in a specific application.

[0027] Figure 10 This indicates the direction of force during the single-charge adjustment process of the combined lens of the present invention in a specific application.

[0028] Figure 11 This refers to the beam-adjusted transmission direction of the combined lens of the present invention in a specific application.

[0029] Legend: 1. Industrial computer; 2. ADIO controller; 3. First high-voltage power supply; 4. Second high-voltage power supply; 5. Focusing electrode lens; 6. Deflection electrode device; 101. High-voltage port; 102. Ion beam optical path graphite; 103. Focusing electrode surface; 104. First electrode fixing post; 105. Second electrode fixing post; 301. First graphite support plate; 302. Second graphite support plate; 303. Cooling water inlet port; 304. Cooling... 305. Water output port; 306. High-voltage connection device; 307. Pre-filter aperture flange; 308. First screw; 309. Second screw; 300. Pre-filter aperture frame; 310. Positive high electrode support plate; 311. First insulating magnetic column; 312. Optical path cavity; 313. Low potential electrode; 314. Protective high-purity graphite; 315. Curved conductive rod; 316. Second insulating magnetic column; 317. Low potential electrode support plate; 318. Positive high electrode. Detailed Implementation

[0030] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0031] like Figure 1 As shown, the combined lens system of the ion implanter provided in this embodiment of the invention includes an industrial control computer 1, an ADIO controller 2, a first high-voltage power supply 3, a second high-voltage power supply 4, a focusing electrode lens 5, and a deflection electrode device 6. Industrial computer 1 is connected to ADIO controller 2 via optical fiber, where the system and control master station are installed for setting and acquiring signal processing; the software is configured to set and acquire 0-20KV voltage, and the information is displayed on the operation page for remote operation; the optical fiber communication is a dual-loop system, consisting of a main loop communication and a secondary loop communication, which is used to prevent abnormalities in one optical fiber communication from affecting the normal operation of the system. ADIO controller 2 is connected to the first high-voltage power supply 3 and the second high-voltage power supply 4 via shielded control cables. ADIO controller 2 is used to interact with power information, and can also collect digital power alarm signals, convert analog signals to binary signals, and realize fiber optic signal transmission. like Figure 2As shown, the first high-voltage power supply 3 is connected to the focusing lens 5 via a high-voltage output cable. The high-voltage output of the first high-voltage power supply 3 is -20KV-0, the current output is 20mA, and the power output is 400W. The power input voltage has two configurations: 115VAC and 230VAC, with an accuracy of 0.01%. Its main function is to apply voltage to the focusing electrode lens 5, forming an electric field between it and the ground potential, thus creating the focusing lens shape. The high-precision power supply precisely adjusts the beam focusing point. The main function of the focusing electrode lens 5 is to change the force on the ions in the horizontal direction, thereby changing the horizontal velocity of the ions and presenting the ion beam focusing effect. The second high-voltage power supply 4 is connected to the deflection electrode device 6 via a high-voltage output cable. The second high-voltage power supply 4 has a high-voltage output of 0-60KV, a current output of 20mA, a power output of 1200W, and a power input voltage of 230VAC. Its accuracy can reach 0.01%. Its main function is to apply voltage to the deflection electrode device 6, forming an electric field between it and the ground potential, thus creating a deflection lens shape. The high-precision power supply can accurately adjust the vertical angle of the beam and the ion velocity. The main function of the deflection electrode device 6 is to change the force on the ions in the vertical direction, thereby changing the vertical velocity of the ions and exhibiting the effect of ion beam deflection.

[0032] After being processed in the ion source stage, doped atoms lose their outer electrons, forming positively charged ions. These ions gain initial velocity under the influence of a strong electric field, forming an ion beam. During propagation, the ion beam experiences repulsive forces between ions, resulting in a divergence tendency. When the instrument is in low-energy mode (i.e., when ion velocities are low), this divergence force acts on each ion individually, resulting in a longer propagation time and a more pronounced divergence. Because the ions do not move horizontally, there is an angle between the optical path and the center, leading to a significant loss in beam utilization. The velocity of a single ion can be decomposed into horizontal and vertical velocities, and the forces acting on it can also be decomposed into horizontal and vertical forces. Changing the vertical velocity allows for ion deflection, while changing the horizontal velocity allows for ion focusing. Adjusting the ion velocity involves applying forces in different directions. The deflection direction is achieved through the positive and negative electrodes inside the deflection electrode device 6. These electrodes are symmetrically distributed, ensuring uniform force on the ions within the electrode region, thus completing the tasks of vertical velocity adjustment and angle optimization. The horizontal velocity is changed by the focusing electrode lens, which applies a force to the horizontal ions, increasing their horizontal velocity and completing the focusing task.

[0033] It can control the output of each high-voltage power supply, generate a horizontal electric field through the focusing electrode lens and a vertical electric field through the deflecting electrode lens, change the horizontal and vertical forces on the ions, and thus change the vertical and horizontal velocities, thereby adjusting the beam current and maximizing the utilization of the ion beam.

[0034] like Figure 3 and Figure 4As shown, the focusing electrode lens 5 includes a high-voltage port 101, an ion beam optical path graphite 102, a focusing electrode surface 103, a first electrode fixing post 104, and a second electrode fixing post 105. The high-voltage port 101 is fixed by screw embedding, with the protruding part made of brass. A high-voltage access hole is provided at the connector end, allowing a spring to be inserted. The ion beam optical path graphite 102 is made of high-purity graphite and is integral with the focusing electrode surface 103, with a structural dimension higher than the focusing electrode surface 103. The focusing electrode surface 103 has a circular structure and is made of high-purity graphite. The first electrode fixing post 104 and the second electrode fixing post 105 are fixed to the focusing electrode surface 103 by screws, and are made of insulating ceramic. They are used to fix the focusing lens and prevent direct contact between the lens and the metal cavity.

[0035] The structural features of this focusing electrode lens 5 are as follows: 1. The lens has a large overall area, creating a large electric field space with the ground electrode; previous focusing lenses had smaller areas and weaker focusing capabilities. 2. The high-voltage contact of the high-voltage port 101 is more stable, resulting in a more stable output (the previous lens was directly fixed to the cavity with a nut, and the two ends used insulating components, which was more expensive. The high voltage was directly applied to the cavity, which was complex and prone to external arcing). 3. Two electrode fixing posts (104, 105) are configured for more stable lens fixation; 4. Configure the ion beam optical path with graphite 102. This hole is consistent with the optical path cavity, making the control more accurate and stable.

[0036] Working principle of focusing electrode lens 5: as follows Figure 9 , 10 As shown in Figure 11: The high-voltage power supply 3 applies a negative voltage to the focusing electrode lens 5. After receiving the voltage, the focusing electrode lens 5 forms an electric field and generates a horizontal electric force F1 on the ions. Figure 10 As shown, the ions have acceleration in the horizontal direction. Increasing the horizontal velocity results in a larger horizontal velocity of the ion beam, while the vertical velocity remains unchanged. Compared with the beam that does not pass through the lens, this ion beam exhibits a focused shape and less divergence.

[0037] like Figures 5-8 As shown, the deflection electrode device 6 includes a first graphite support plate 301, a second graphite support plate 302, a cooling water inlet port 303, a cooling water outlet port 304, a high-voltage connection device 305, a pre-filter aperture flange 306, a first screw 307 (a cross-slot pan head vacuum screw), a second screw 308 (a cross-slot pan head vacuum screw), a pre-filter aperture frame 309, a positive high-potential electrode support plate 310, a first insulating magnetic column 311, an optical path cavity 312, a low-potential electrode 313, a protective high-purity graphite block 314, a curved conductive rod 315, a second insulating magnetic column 316, a low-potential electrode support plate 317, and a positive high-potential electrode 318. The first graphite support plate 301 and the second graphite support plate 302 are fixed to the panel of the pre-filter aperture flange 306 by screws. The pre-filter aperture flange 306 is made of aluminum. The cooling water inlet port 303 and the cooling water outlet port 304 are located on the panel of the pre-filter aperture flange 306.

[0038] The high-voltage connection device 305 is connected to the pre-filter aperture flange 306 via a pin. The high-voltage connection device 305 uses a ceramic-encapsulated copper port, with high-voltage ports provided on both the vacuum and atmospheric sides for airtight vacuum. It transmits high voltage from the atmospheric side to the vacuum side via a built-in metal conductive rod, exhibiting strong high-voltage resistance and insulation capabilities.

[0039] The pre-filter aperture flange 306 is connected to the pre-filter aperture frame 309 via a first screw 307 and a second screw 308. The pre-filter aperture flange 306 isolates the atmosphere from the vacuum, providing a sealing function. The pre-filter aperture flange 306 is a metal part, in the form of a panel, slightly larger than the mounting hole in the vacuum chamber. A sealing ring is used between the flange and the ion implanter chamber, thus the inside of the flange is a vacuum, while the outside is exposed to the atmosphere. Both the first screw 307 and the second screw 308 are Phillips head pan head vacuum screws, which can promptly release the vacuum at a fixed position, reducing the risk of vacuum leakage.

[0040] The pre-filter aperture frame 309 is made of aluminum and is used to support the positions of various components; the positive electrode support plate 310 is fixed on the pre-filter aperture frame 309; the first insulating magnetic column 311 and the second insulating magnetic column 316 are connected to the positive electrode support plate 310 by fixing screws. The positive electrode support plate 310 is made of ceramic and serves as a pressure-resistant and insulating material; the optical path cavity 312 is a circular structure made of high-purity graphite and is integrated with the positive electrode support plate 310; the low-potential electrode 313 is made of high-purity graphite, fixed on the low-potential electrode support plate 317, and connected to the ground, possessing ground potential properties.

[0041] A curved conductive rod 315 is fixed to the positive electrode 318, introducing the high-voltage power supply to the positive electrode 318. A protective high-purity graphite block 314 is fixed to the positive electrode support plate 310, absorbing sputtered ions from the beam and preventing ions from bombarding the curved conductive rod 315. Specifically, the high-purity graphite block 314 is protective graphite. The beam is a positively charged ion beam with a divergent tendency. This device is located close to the beam generation location, and a small number of ions may sputter onto the graphite. Graphite has a ground potential and will replenish the ions with corresponding electrons to form atoms; this process is ion absorption. Main functions: 1. Graphite has strong internal electron mobility; 2. The graphite surface can quickly replenish electrons to neutralize the charge and form atoms. This characteristic prevents ions from sputtering onto the metal cavity, causing component damage.

[0042] The second high-voltage power supply 4 applies a positive voltage to the positive electrode 318. After receiving the voltage, the positive electrode 318 forms an electric field and generates a perpendicular electric force F2 on the ions. Figure 10 As shown, the ions decelerate in the vertical direction, reducing their vertical velocity. This change in the vertical velocity of the ion beam results in a deflected beam compared to the beam passing through the lens.

[0043] Combined lens system control process: After system installation, the deflection electrode device 6 is cooled by water, providing cooling functionality. The circuit breakers for the first high-voltage power supply 1 and the second high-voltage power supply 2 are closed, enabling normal power supply and standby operation. Figure 9 The ion beam enters the deflection electrode device 6, positioned between the high-potential electrode 318 and the low-potential electrode 313. The ion beam is at a certain angle to the centerline, causing the ions to deviate from the center and move towards the high-voltage electrode. At this point, the beam is in an unadjusted state, resulting in significant beam loss. The host computer sets a start command, which is sent to the first high-voltage power supply 3 via the ADIO controller 2 to apply a negative voltage to the focusing electrode lens 5. Upon receiving the voltage, the focusing electrode lens 5 generates an electric field, producing a horizontal electric force on the ions. Figure 10 As shown, at this time, the ions have acceleration in the horizontal direction, increasing their horizontal velocity; the host computer sets the start command and sends it to the second high-voltage power supply 4 through the ADIO controller 2 to apply a positive voltage to the deflection electrode device 6. After receiving the voltage, the deflection electrode device 6 forms an electric field and generates a vertical electric force on the ions, as shown in the figure. Figure 10 As shown, the ions are decelerating in the vertical direction at this point. The vertical ion velocity is reduced. The beam current at the back end is monitored, and the output voltage of the high-voltage power supply is slowly changed. Adjustment stops when the beam current reaches its maximum value; this is the maximum beam current value, indicating that the combined system adjustment is complete. Figure 11 As shown, after beam adjustment, it will enter the next region along the centerline. This system has already adjusted the beam to its optimal level for this stage.

[0044] This invention effectively solves key technical problems in ion implanters during low-energy modes, such as beam spot enlargement, center shift, and low utilization caused by slow ion velocity and severe beam divergence, by integrating a focusing electrode lens 5 and a deflection electrode device 6, along with a high-precision dual high-voltage power supply and intelligent industrial control. The system applies an electric field in the horizontal direction through the focusing electrode to enhance the horizontal ion velocity, achieving precise beam focusing and significantly reducing the beam spot size. Simultaneously, the deflection electrode applies a controllable electric field in the vertical direction to adjust the vertical ion velocity and correct the beam deflection angle, bringing it back to the transmission center axis. The synergistic effect of these two components simultaneously optimizes the beam's spatial shape and transmission trajectory, thereby significantly improving beam concentration and stability.

[0045] This system boasts high-precision voltage regulation capabilities (power supply accuracy up to 0.01%). Combined with a dual-loop fiber optic communication redundancy design and modular component structure, it not only achieves remote precision control and high system reliability but also facilitates installation, maintenance, and industrialization. In practical applications, this system maximizes the utilization of low-energy ion beams, improves beam injection efficiency and uniformity in the beamline region, thereby enhancing chip manufacturing process yield and overall equipment performance. It is particularly suitable for applications in high-end integrated circuit manufacturing with stringent ion implantation precision requirements.

[0046] In addition, the system of this invention is installed in parallel with conventional machine tool systems and operates independently; the components of this system are tested independently from conventional machine tool components, can be disassembled and assembled separately, and are easy to maintain; the control and power supply system is installed on the gas box electrical frame, and the system materials are installed independently, which can realize industrialization.

[0047] This invention further provides a combined lens system based on the ion implanter described above, comprising the following steps: S1. After installing the entire system, configure the power parameters, start the power supply, and activate the cooling water circulation function; S2. After the beam enters the deflection electric field, the voltage of the second high-voltage power supply 4 is applied separately over a large area to find the beam deflection angle; S3. Change the voltage value of the second high-voltage power supply 4 in stages to find the optimal deflection angle; S4. After the beam enters the deflection electric field, apply the voltage of the first high-voltage power supply 3 separately over a large area, find the beam divergence angle, and adjust the beam focusing state; S5. Change the voltage value of the first high-voltage power supply 3 in stages to find the optimal focusing state; S6. Simultaneously apply voltages to the first high-voltage power supply 3 and the second high-voltage power supply 4, making small-range changes and adjustments to maximize the optimal utilization of the beam current. S7. Adjustment complete. Press this menu to run.

[0048] The above-mentioned working process involves remote operation to control the output of each high-voltage power supply, generating horizontal and vertical electric fields, changing the vertical and horizontal forces on the ions, and thus changing the vertical and horizontal velocities. This achieves the function of adjusting the beam current, effectively correcting the beam deflection angle to the center line, and focusing the beam current to the center point, allowing it to smoothly enter the beamline region and maximizing the utilization rate of the ion beam.

[0049] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should be considered within the scope of protection of the present invention.

Claims

1. A combined lens system of an ion implanter, characterized by, It comprises an industrial computer (1), an ADIO controller (2), a first high-voltage power supply (3), a second high-voltage power supply (4), a focusing electrode lens (5) and a deflection electrode device (6). The industrial computer (1) is connected with the first high-voltage power supply (3) and the second high-voltage power supply (4) through the ADIO controller (2). The focusing electrode lens (5) is connected with the first high-voltage power supply (3), and the deflection electrode device (6) is connected with the second high-voltage power supply (4). The focusing electrode lens (5) is used for applying electric field force to the ion beam in the horizontal direction to realize focusing, and the deflection electrode device (6) is used for applying electric field force to the ion beam in the vertical direction to realize deflection.

2. The combined lens system of an ion implanter according to claim 1, wherein, The focusing electrode lens (5) comprises a high-voltage port (101), an ion beam light path graphite (102), a focusing electrode surface (103), a first electrode fixing column (104) and a second electrode fixing column (105); the focusing electrode surface (103) is in a circular structure and is made of high-purity graphite; the high-voltage port (101) is located on the focusing electrode surface (103) and is used for connecting a high-voltage power supply; the ion beam light path graphite (102) is integrally formed with the focusing electrode surface (103); the first electrode fixing column (104) and the second electrode fixing column (105) are located on the focusing electrode surface (103) and are used for fixing the focusing electrode lens (5) as a whole in a light path cavity (312).

3. The combined lens system of an ion implanter according to claim 1 or 2, wherein The deflection electrode device (6) comprises a pre-filtering diaphragm flange (306), a high-voltage connecting device (305), a pre-filtering diaphragm skeleton (309), a positive high electrode (318) and a low potential electrode (313). The high-voltage connecting device (305) is installed on the pre-filtering diaphragm flange (306) and is used for conducting high voltage from the atmospheric side to the vacuum side. The pre-filtering diaphragm skeleton (309) is installed on the vacuum side of the pre-filtering diaphragm flange (306). The positive high electrode (318) and the low potential electrode (313) are both located in the pre-filtering diaphragm skeleton (309) and are connected with high potential and ground potential respectively to form a deflection electric field.

4. The combined lens system of an ion implanter according to claim 3, wherein A positive high electrode support plate (310) is installed on the pre-filtering diaphragm skeleton (309), and the positive high electrode (318) is connected to the positive high electrode support plate (310) through a first insulating magnetic column (311) and a second insulating magnetic column (316).

5. The combined lens system of an ion implanter according to claim 4, wherein The pre-filtering diaphragm flange (306) is connected to the pre-filtering diaphragm skeleton (309) through a first screw (307) and a second screw (308), and the first screw (307) and the second screw (308) are both cross-slot disc head vacuum screws.

6. The combined lens system of an ion implanter according to claim 3, wherein The positive high electrode (318) is connected with a high-voltage power supply through a curved conductive rod (315).

7. The combined lens system of an ion implanter according to claim 6, wherein A protective high-purity graphite block (314) is arranged on the positive high electrode support plate (310) and is used for absorbing sputtering ions to prevent ion bombardment on the curved conductive rod (315).

8. The combined lens system of an ion implanter according to claim 1 or 2, wherein Double-loop optical fiber communication is adopted between the ADIO controller (2) and the industrial computer (1), including a main loop and a secondary loop, to ensure communication redundancy.

9. The combined lens system of an ion implanter according to claim 1 or 2, wherein The output voltage range of the first high-voltage power supply (3) is -20KV to 0, and the precision is 0.01%; the output voltage range of the second high-voltage power supply (4) is 0 to 60KV, and the precision is 0.01%.

10. A method of adjusting ion beam current in a combined lens system of an ion implanter according to any one of claims 1 to 9, characterized by, The method comprises the steps of: S1. Start the system, turn on the power supply and the cooling water circulation; S2. Apply the voltage of the second high-voltage power supply (4), and adjust the deflection angle of the beam current; S3. Adjust the voltage of the second high-voltage power supply (4) in steps to find the optimal deflection angle; S4. Apply the voltage of the first high-voltage power supply (3), and adjust the focusing state of the beam current; S5. Adjust the voltage of the first high-voltage power supply (3) in steps to find the optimal focusing state; S6. Simultaneously fine-tune the voltages of the first high-voltage power supply (3) and the second high-voltage power supply (4) to maximize the utilization of the beam current; S7. Save the parameters and run the system.

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