Protection switch

Abstract

The invention relates to a protection switch. The present invention relates to an overvoltage and overcurrent protection switch, and more specifically, to an overvoltage and overcurrent protection switch comprising: a first NMOS type transistor adapted to receive a first voltage across a conductive terminal thereof; a second NMOS type transistor including a source terminal coupled to a source terminal of the first transistor, and adapted to receive a second voltage across a conductive terminal thereof that is less than the first voltage; and a third NMOS type transistor including a source terminal coupled to a source terminal of the first transistor, and adapted to receive the second voltage across a conductive terminal thereof.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to French patent application No. FR2409526, filed on September 9, 2024, entitled “Interrupteurde protection” (protection switch), which is incorporated herein by reference to the fullest extent permitted by law. Technical Field

[0003] This manual generally relates to electronic systems and devices, and more specifically to protection technologies for electronic systems and devices to deal with abnormal phenomena such as overvoltage or overcurrent. Background Technology

[0004] Overvoltage or overcurrent conditions within an electronic system or device may impede its normal operation and may even damage the electronic system or device.

[0005] It is hoped that known overvoltage and overcurrent protection devices can be improved, at least in some respects. Summary of the Invention

[0006] More efficient overvoltage and overcurrent protection devices are currently needed.

[0007] There is a need for more efficient overvoltage and overcurrent protection switches.

[0008] There is a need for overvoltage and overcurrent protection switches that are more compatible with the devices to be protected.

[0009] There is a current need for overvoltage and overcurrent protection switches that can more accurately detect overcurrent.

[0010] There is a current need for overvoltage and overcurrent protection switches with smaller dimensions.

[0011] One embodiment overcomes all or some of the shortcomings of known overvoltage and overcurrent protection switches.

[0012] One embodiment overcomes all or some of the shortcomings of known overvoltage and overcurrent protection devices.

[0013] One embodiment provides an overvoltage and overcurrent protection switch, comprising: a first

[0014] The first NMOS transistor is adapted to receive a first voltage across its conductive terminals; the second NMOS transistor includes a source terminal coupled to the source terminal of the first transistor and is adapted to receive a second voltage less than the first voltage across its conductive terminals; and the third NMOS transistor includes a source terminal coupled to the source terminal of the first transistor and is adapted to receive the second voltage across its conductive terminals.

[0015] According to one embodiment, the second transistor and the third transistor operate in reverse ohmic mode.

[0016] According to one embodiment, the first voltage ranges from 5V to 65V.

[0017] According to one embodiment, the second voltage ranges from 5V to 8V.

[0018] According to one embodiment, the switch further includes: a fourth NMOS transistor adapted to receive the first voltage across its conductive terminals; a fifth NMOS transistor including a source terminal coupled to a source terminal of the fourth transistor and adapted to receive the second voltage across its conductive terminals; and a sixth NMOS transistor including a source terminal coupled to a source terminal of the fourth transistor and adapted to receive the second voltage across its conductive terminals.

[0019] According to one embodiment, the switch further includes a controllable voltage source and management circuitry for the controllable voltage source, the controllable voltage source being adapted to provide a voltage between the source terminal of the second transistor and the gate terminal of the second transistor, and between the source terminal of the third transistor and the gate terminal of the third transistor.

[0020] Another embodiment provides an overvoltage and overcurrent protection device, which includes the aforementioned protective switch.

[0021] Another embodiment provides an apparatus according to claim 7, the apparatus further comprising a control circuit for the switch.

[0022] According to one embodiment, the device further includes an overcurrent detection circuit coupled to the drain terminal of the third transistor.

[0023] According to one embodiment, the overcurrent detection circuit includes an internal voltage compensation circuit.

[0024] According to one embodiment, the device further includes an overvoltage detection circuit coupled to the drain terminal of the first transistor.

[0025] Another embodiment provides an electronic device that includes the above-described overvoltage and overcurrent protection devices.

[0026] Another embodiment provides a charging device that includes the overvoltage and overcurrent protection devices described above.

[0027] Another embodiment provides an electronic system including electronic devices, a charging device, and the aforementioned overvoltage and overcurrent protection devices.

[0028] Another embodiment provides an overvoltage and overcurrent protection method that uses the switch described above. Attached Figure Description

[0029] The above-described features and advantages, as well as other features and advantages, will be described in detail in the following description of specific embodiments, which is given by way of example rather than limitation and with reference to the accompanying drawings, wherein:

[0030] Figure 1 An embodiment of the electronic system is shown;

[0031] Figure 2 An embodiment of an overvoltage and overcurrent protection device is shown;

[0032] Figure 3 The diagram shows curves illustrating the operation of a MOS transistor;

[0033] Figure 4 Another embodiment of the overvoltage and overcurrent protection device is shown; and

[0034] Figure 5 Another embodiment of the overcurrent protection device is shown. Detailed Implementation

[0035] In the accompanying drawings, similar features have been marked with similar symbols. Specifically, common structural and / or functional features in various embodiments may have the same markings and may handle the same structural, dimensional, and material properties.

[0036] For clarity, only the operations and components that are useful for understanding the embodiments described herein are illustrated and described in detail.

[0037] Unless otherwise stated, when referring to two elements connected together, it means a direct connection without any intermediate elements other than conductors, and when referring to two elements "coupled" together, it means that the two elements can be directly connected or can be coupled through one or more other elements.

[0038] In the following disclosure, unless otherwise stated, when absolute position qualifiers such as “front,” “back,” “up,” “down,” “left,” “right,” etc., or relative position qualifiers such as “above,” “below,” “higher,” “lower,” etc., or direction qualifiers such as “horizontal,” “vertical,” etc., refer to the orientation shown in the accompanying drawings, or the orientation of the component when it is in normal use.

[0039] Unless otherwise specified, the expressions “about,” “approximately,” “basically,” and “roughly” indicate within 10%, and preferably within 5%.

[0040] The embodiments described below relate to overvoltage and overcurrent protection devices, and more specifically to protective switches for responding to such abnormal conditions. The switch includes a first high-voltage transistor adapted to receive overvoltage and a second low-voltage transistor adapted to detect overcurrent. Reference will be made to... Figure 2 and Figure 3 The structure of the switch is described in detail, and this structure does not require the use of a high-voltage transistor suitable for overcurrent detection. (Refer to...) Figure 4 and Figure 5 Describe in detail the alternatives to this structure.

[0041] Furthermore, the embodiments described below are particularly suitable for use in any type of industrial field requiring overvoltage and overcurrent protection. More specifically, such protective switches can be used in: the automotive industry, such as in automotive electrification or advanced driver assistance systems (ADAS); industrial fields, such as green energy, infrastructure electrification, the Internet of Things (IoT), and smart homes, where power consumption, energy consumption, and data exchange are critical factors; the personal electronics industry, such as in mobile phones and the IoT, and in high-speed interfaces; and the communications equipment, computer, and peripherals industry, such as in infrastructure and data centers, and in low Earth orbit (LEO) satellites.

[0042] Figure 1 An embodiment of the electronic system 100 is shown very schematically and in block diagram form.

[0043] Electronic system 100 includes electronic device 110 (LOAD), which includes a power distribution device (e.g., a battery) that may need to be charged. For this purpose, system 100 also includes charging device 120 (CHARGER), which is adapted to charge the power distribution device of electronic device 110. Device 110 may also be referred to as a device to be protected.

[0044] System 100 also includes an electrical connection device 130 for devices 110 and 120. According to one embodiment, device 130 is adapted to transmit power from device 120 to device 110, and, if applicable, data. According to one example, device 130 is a wire. Device 130 is capable of handling any type of protocol for power transmission, and, if applicable, any type of protocol for data transmission. According to one example, device 130 can also be used to transmit power from device 110 to device 120, and, if applicable, data.

[0045] According to one embodiment, system 100 further includes an overvoltage and overcurrent protection device 140 that allows device 110 to be protected against overvoltage and overcurrent. (See reference...) Figures 2 to 5 Several embodiments of overvoltage and overcurrent protection devices are described.

[0046] exist Figure 1 In this embodiment, the protection device 140 is shown disposed between the device 130 and the device 110, but alternatively, the device 140 may also be integrated as part of the device 110, the charging device 120, or the device 130.

[0047] According to one embodiment, the protection device 140 includes: a protection switch 141; a control circuit 142 (CMD) for the protection switch 141; an overcurrent detection circuit 143 (OCP); and an overvoltage detection circuit 144 (OVP).

[0048] According to one embodiment, switch 141 is configured to interrupt the power supply from device 120 to device 110 upon detection of overvoltage and / or overcurrent. In other words, switch 141 is configured to disconnect device 110 from device 120 upon detection of overvoltage and / or overcurrent. Hereinafter, the terminal in switch 141 coupled to device 120 is referred to as the input terminal of switch 141, and the terminal in switch 141 coupled to device 110 is referred to as the output terminal of switch 141. (Refer to...) Figure 2 , Figure 4 and Figure 5 Describe a specific example of switch 141.

[0049] According to one embodiment, the control circuit 142 is adapted to receive information from the detection circuits 143 and 144, and to apply control to the switch 141 based on the information. More specifically, if the control circuit receives information from the detection circuits 143 and 144 indicating that an overvoltage or overcurrent has been detected, the control circuit 142 sends a shutdown control signal to the switch 141, and the switch 141 subsequently becomes a non-conducting state.

[0050] According to one embodiment, the overcurrent detection circuit 143 is coupled (preferably connected) to the output of the switch 141, i.e., located between the switch 141 and the device 110. (Refer to...) Figure 5 A specific example of circuit 143 is described.

[0051] According to one embodiment, the overvoltage detection circuit 144 is coupled (preferably connected) to the input of the switch 141, i.e., located between the switch 141 and the device 120.

[0052] One implementation of the overvoltage and overcurrent protection method is as follows: When the detection device 143 detects an overcurrent, the information is sent to the control circuit 142, which then transmits a control signal to the shut-off switch 141, thereby disconnecting device 110 from device 120. When the detection device 144 detects an overvoltage, the information is sent to the control circuit 142, which then transmits a control signal to the shut-off switch 141, thereby disconnecting device 110 from device 120. When neither overvoltage nor overcurrent is detected, switch 141 is in the ON state.

[0053] Figure 2 An embodiment of the overvoltage and overcurrent protection device 200 is shown in part and schematically in block diagram form.

[0054] Protection device 200 and reference Figure 1 The described protective device 140 is similar. The common features of device 140 and device 200 will not be described in detail again. Only the differences between device 140 and device 200 will be emphasized.

[0055] Therefore, similar to device 140, device 200 includes: a protective switch 210 of type 141; and a control circuit 220 of type 142 for switch 210.

[0056] (CMD); Overcurrent detection circuit 230 (OCP) of type 143; and overvoltage detection circuit 240 (OVP) of type 144.

[0057] According to one example, device 200 includes an input terminal IN200, which...

[0058] IN200 is suitable for coupling to a reference. Figure 1 The described device is of type 120. According to one example, device 200 also includes an output terminal OUT 200 adapted to be coupled to a reference. Figure 1 The device described is of type 110.

[0059] According to one embodiment, switch 210 includes a first transistor T211. According to one example, transistor T211 is a metal-oxide-semiconductor field-effect transistor, or a MOSFET transistor, or a MOS transistor. Furthermore, transistor T211 is an N-channel MOS transistor, or an N-type MOS transistor, or an NMOS transistor. Moreover, transistor T211 is adapted to receive a high voltage across its conductive terminals (i.e., the source and drain terminals). More specifically, transistor T211 is adapted to receive a maximum voltage across its conductive terminals, the maximum voltage being in the range of 5V to 65V, for example, greater than 10V or greater than 12V, for example, approximately 16V.

[0060] According to one embodiment, switch 210 further includes two transistors T212 and T213. According to one example, transistors T211 and T212 are NMOS transistors. Furthermore, transistors T212 and T213 are adapted to receive a low voltage across their conductive terminals. In other words, transistors T212 and T213 are adapted to receive a maximum voltage across their conductive terminals that is less than the maximum voltage that transistor T21 can withstand. More specifically, transistors T212 and T213 are adapted to receive a voltage from 5V to 8V across their conductive terminals, for example, approximately 5V.

[0061] According to one embodiment, the drain terminal of transistor T211 is coupled (preferably connected) to the input terminal IN200 of device 200, and the source terminal of transistor T211 is coupled (preferably connected) to the source terminals of transistors T212 and T213. According to one embodiment, the drain terminal of transistor T212 is coupled (preferably connected) to the output terminal OUT200 of device 200. According to one embodiment, the drain terminal of transistor T213 is coupled (preferably connected) to the input terminal of overcurrent detection circuit 230. According to one embodiment, the gate terminals of transistors T211, T212, and T213 are all coupled (preferably connected) to the output terminal of control circuit 220.

[0062] Transistor T211 is used as a power switch, allowing the protected device to be disconnected from the charging device upon detection of overvoltage or overcurrent. Transistor T212 acts as a turn-on transistor, allowing power to be transferred to the protected device. Transistor T213 is used as a current-measuring transistor because it transfers a portion of the current received by the protected device to the overcurrent detection circuit 230. According to one embodiment, for normal operation of switch 210, transistors T212 and T213 operate in reverse ohmic mode. (See reference...) Figure 3 This mode is described in detail. Therefore, the control circuit 200 is adapted to provide control signals to transistors T212 and T213, thereby allowing them to operate in reverse ohmic mode.

[0063] One advantage of switch 210 is its smaller footprint compared to known protective switches. In practice, two high-voltage transistors are typically used to construct overvoltage and overcurrent protection transistors. High-voltage transistors generally have a larger surface area compared to low-voltage transistors. Using a single high-power transistor and two low-voltage transistors allows for a reduction in the footprint of switch 210.

[0064] Figure 3 Curve 300 is shown illustrating the operating characteristics of an NMOS transistor. More specifically, curve 300 shows the variation of the NMOS transistor source terminal output current Iout with the voltage VDS across its conductive terminals.

[0065] When the voltage VDS is positive, and more specifically, within the range from zero voltage V300 to saturation voltage V301, the transistor operates in ohmic mode. In other words, under these conditions, the transistor can be treated as a resistor.

[0066] When the voltage VDS exceeds the saturation voltage V301, the transistor operates in saturation mode. In other words, the increase of its output current Iout slows down until it reaches a stable value.

[0067] When the voltage VDS is negative, and more specifically, within the range from zero voltage V300 to reverse saturation voltage V302, the transistor operates in reverse ohmic mode. In other words, in this case, the transistor can still be considered a resistor until the reverse saturation voltage V302 is reached.

[0068] When the current Iout exceeds the reverse saturation current I302, the transistor operates in reverse saturation mode. In other words, the transistor operates as a diode.

[0069] Figure 4 Another embodiment of the overvoltage and overcurrent protection device 400 is shown in part and schematically in block diagram form.

[0070] Protection device 400 and reference Figure 1 The described protective device 140 and reference Figure 2 The described protective device 200 is similar. The common features of devices 140, 200, and 400 will not be described in detail again. Only the differences between devices 140, 200, and 400 will be emphasized.

[0071] Therefore, similar to device 200, device 400 includes: a protective switch 410 of type 210; and a control circuit 420 of type 220 for the switch 410.

[0072] (CMD); Overcurrent detection circuit 430 (OCP) of type 230; and overvoltage detection circuit 440 (OVP) of type 240.

[0073] The difference between device 400 and device 200 is that device 400 includes two input terminals IN401 and IN402, and therefore it includes a dual-path protection switch 410. Device 400 includes a single output terminal OUT400.

[0074] According to one embodiment, the protective switch 410 includes two NMOS transistors T411 and T412, both adapted to receive high voltage (i.e., of the same type as transistor T211). The source terminal of transistor T411 is coupled (preferably connected) to the source terminal of transistor T412 and coupled to a node receiving a reference potential (e.g., ground potential). The drain terminal of transistor T411 is coupled (preferably connected) to input terminal IN401 and coupled to the input terminal of overvoltage detection circuit 440. The drain terminal of transistor T412 is coupled (preferably connected) to input terminal IN402 and coupled to another input terminal of overvoltage detection circuit 440. The gate terminals of transistors T411 and T412 are both coupled (preferably connected) to the output terminal of control circuit 420. Figure 4 (Not shown in the image).

[0075] According to one embodiment, the protection switch 410 also includes three NMOS transistors.

[0076] T413, T414, and T415: Composition and Reference Figure 2 The described switch 210 has the same structure. More specifically, transistor T413 is adapted to receive high voltage (i.e., the same type as transistor T211), and transistors T414 and T415 are adapted to receive low voltage (i.e., the same type as transistors T212 and T213).

[0077] According to one embodiment, the drain terminal of transistor T413 is coupled (preferably connected) to the input terminal IN401 of device 400; the source terminal of transistor T413 is coupled (preferably connected) to the source terminals of transistors T414 and T415. According to one embodiment, the drain terminal of transistor T414 is coupled (preferably connected) to the output terminal OUT400 of device 400. According to one embodiment, the drain terminal of transistor T415 is coupled (preferably connected) to the input terminal of overcurrent detection circuit 430. According to one embodiment, the gate terminals of transistors T413, T414, and T415 are all coupled (preferably connected) to the output terminal of control circuit 420.

[0078] According to one embodiment, the protection switch 410 further includes three additional NMOS transistors T416, T417, and T418, which are configured in accordance with reference to... Figure 2 The protective switch 210 described has the same structure. More specifically, transistor T416 is adapted to receive high voltage (i.e., the same type as transistor T211), and transistors T417 and T418 are adapted to receive low voltage (i.e., the same type as transistors T212 and T213).

[0079] According to one embodiment, the drain terminal of transistor T416 is coupled (preferably connected) to the input terminal IN402 of device 400, and the source terminal of transistor T416 is coupled (preferably connected) to the source terminals of transistor T417 and transistor T418. According to one embodiment, the drain terminal of transistor T417 is coupled (preferably connected) to the output terminal OUT400 of device 400. According to one embodiment, the drain terminal of transistor T418 is coupled (preferably connected) to the input terminal of overcurrent detection circuit 430. According to one embodiment, transistors T416, T417, and transistor T418...

[0080] The gate terminals of T418 are all coupled (preferably connected) to the output of control circuit 420.

[0081] For reference Figure 2 and Figure 3 The transistors T414, T415, and T415 are described.

[0082] T416, transistor T417, and transistor T418 are all controlled to operate in reverse ohmic mode.

[0083] The advantage of this device is that it allows overvoltage and overcurrent to be detected at both input terminals.

[0084] Furthermore, references can be made to those skilled in the art. Figure 4 The described embodiments are extended to overvoltage and overcurrent protection devices that include two or more input terminals.

[0085] Figure 5 Another embodiment of the overvoltage and overcurrent protection device 500 is shown in part and schematically in block diagram form.

[0086] Protection device 500 and reference Figure 1 The described protective device 140 and reference Figure 2 The described protective device 200 is similar. The common features of devices 140, 200, and 500 will not be described in detail again. Only the differences between devices 140, 200, and 500 will be emphasized.

[0087] Therefore, similar to device 200, device 500 includes: a protective switch 510 of type 210; and a control circuit 520 of type 220 for the switch 510.

[0088] (CMD); Overcurrent detection circuit 530 (OCP) of type 230; and, according to one example, overvoltage detection circuit 240 of type ( Figure 5 (Not shown in the image).

[0089] The difference between device 500 and device 200 is that switch 510 is adapted to filter overcurrents occurring at the input terminals.

[0090] According to one embodiment, the protection switch 510 also includes three NMOS transistors.

[0091] T511, T512, and T513: Composition and Reference Figure 2 The described switch 210 has the same structure. More specifically, transistor T511 is adapted to receive high voltage (i.e., the same type as transistor T211), and transistors T512 and T513 are adapted to receive low voltage (i.e., the same type as transistors T212 and T213).

[0092] According to one embodiment, the drain terminal of transistor T511 is coupled (preferably connected) to the input terminal IN501 of device 500, and the source terminal of transistor T511 is coupled (preferably connected) to the source terminals of transistors T512 and T513. According to one embodiment, the drain terminal of transistor T512 is coupled (preferably connected) to the output terminal OUT500 of device 500. According to one embodiment, the drain terminal of transistor T513 is coupled (preferably connected) to the input terminal of overcurrent detection circuit 530. According to one embodiment, the gate terminal of transistor T513 is coupled (preferably connected) to the output terminal of control circuit 520.

[0093] According to one embodiment, switch 510 further includes a controllable voltage source VS510 and a management circuit 511 (current level setting) for the controllable voltage source VS510. The voltage source is adapted to provide control potentials to transistors T512 and T513, and is adapted to adjust for cross-terminal voltage levels.

[0094] The control potential is adjusted by the value of the current transmitted between IN500 and terminal OUT500.

[0095] Furthermore, according to one example, the overcurrent detection circuit may include: an NMOS transistor.

[0096] T531; two comparators Comp531 and Comp532; resistor R531; and the comparator's internal voltage compensation circuit (VS530).

[0097] According to one example, the drain terminal of transistor T531 is coupled (preferably connected) to the drain terminal of transistor T513, and the source terminal of transistor T531 is coupled (preferably connected) to node 531. The gate terminal of transistor T531 is coupled (preferably connected) to the output of comparator Comp531. The first terminal of resistor R531 is coupled (preferably connected) to node 531, and the second terminal of resistor R531 is coupled (preferably connected) to the node providing a reference potential (e.g., ground potential). The non-inverting input terminal (+) of the comparator is coupled (preferably connected) to node 531, and the inverting input terminal (-) is coupled to the output terminal OUT500 of device 500 via circuit VS530. According to one example, circuit VS530 is a voltage source that provides a voltage Voffset230 to compensate for the internal offset voltage of comparator Comp530. Comparator Comp531 and the transistor constitute a conversion stage that converts the current provided by transistor T513 into voltage.

[0098] In one example, the comparator Comp532 is used to compare the voltage supplied by the conversion stage with a reference voltage Vref500. This is an overcurrent detection stage. For this purpose, the comparator...

[0099] The non-inverting input terminal (+) of Comp532 is coupled (preferably connected) to the source terminal of transistor T531. The inverting input terminal (-) of comparator Comp532 is adapted to receive a reference voltage Vref500. The output terminal of comparator Comp532 is coupled (preferably connected) to control circuitry 520.

[0100] One implementation of the overvoltage and overcurrent protection method is as follows. When the detection device 530 detects an overcurrent, the information is sent to the circuit 511, which then transmits control to adapt to the closing of switches T512 and T513, thereby disconnecting the device to be protected from the charging device. When the overvoltage detection device ( Figure 5 When an overvoltage is detected (not shown), information is sent to the control circuit 520, which then transmits control of the shut-off switch T511 to disconnect the device to be protected from the charging device.

[0101] The advantage of this embodiment is that it allows compensation of the offset voltage of the comparator Comp531.

[0102] Voffset530. ​​In reality, the voltage Voffset is constant, but the current it provides depends on the on-state resistance of transistor T513. The smaller this resistance, the smaller the current generated by the voltage Voffset; therefore, simply changing the resistance value of transistor T513 can alter the error of the overcurrent detection circuit.

[0103] Various embodiments and variations have been described herein. Those skilled in the art will understand that certain features of these embodiments can be combined, and other variations will be readily apparent to them. Specifically, refer to... Figure 4 and Figure 5 The described embodiments can be combined without any creative effort.

[0104] Finally, based on the functional descriptions provided above, those skilled in the art are capable of implementing the embodiments and variations described herein.

Claims

1. An overvoltage and overcurrent protection switch comprising: a first N-channel metal oxide semiconductor (NMOS) type transistor adapted to receive a first voltage across its conductive terminals; a second NMOS type transistor including a source terminal coupled to a source terminal of the first transistor and adapted to receive a second voltage, less than the first voltage, across its conductive terminals; and a third NMOS type transistor including a source terminal coupled to a source terminal of the first transistor and adapted to receive the second voltage across its conductive terminals.

2. The switch of claim 1, wherein the second and third transistors operate in reverse ohmic mode.

3. The switch of claim 1, wherein the first voltage ranges from 5 volts (V) to 65 V; and wherein the second voltage ranges from 5 V to 8 V.

4. The switch of claim 1, further comprising: a fourth NMOS type transistor adapted to receive the first voltage across its conductive terminals; a fifth NMOS type transistor including a source terminal coupled to a source terminal of the fourth transistor and adapted to receive the second voltage across its conductive terminals; and a sixth NMOS type transistor including a source terminal coupled to a source terminal of the fourth transistor and adapted to receive the second voltage across its conductive terminals.

5. The switch of claim 1, further comprising a controllable voltage source and a management circuit for the controllable voltage source, the controllable voltage source adapted to provide a voltage between the source terminal of the second transistor and a gate terminal of the second transistor and between the source terminal of the third transistor and a gate terminal of the third transistor.

6. An overvoltage and overcurrent protection apparatus comprising: a switch comprising: a first N-channel metal oxide semiconductor (NMOS) type transistor adapted to receive a first voltage across its conductive terminals; a second NMOS type transistor including a source terminal coupled to a source terminal of the first transistor and adapted to receive a second voltage, less than the first voltage, across its conductive terminals; and a third NMOS type transistor including a source terminal coupled to a source terminal of the first transistor and adapted to receive the second voltage across its conductive terminals.

7. The apparatus of claim 6, wherein the second and third transistors of the switch operate in reverse ohmic mode.

8. The apparatus of claim 6, wherein the first voltage of the switch ranges from 5 volts (V) to 65 V; and wherein the second voltage of the switch ranges from 5 V to 8 V.

9. The apparatus of claim 6, wherein the switch further comprises: ​ ​ a fourth NMOS transistor adapted to receive the first voltage across its conductive terminals; a fifth NMOS transistor including a source terminal coupled to a source terminal of the fourth transistor and adapted to receive the second voltage across its conductive terminals; and a sixth NMOS transistor including a source terminal coupled to a source terminal of the fourth transistor and adapted to receive the second voltage across its conductive terminals.

10. The apparatus of claim 6, wherein the switch further comprises: a controllable voltage source; and a management circuit of the controllable voltage source; wherein the controllable voltage source is adapted to provide a voltage between the source terminal of the second transistor of the switch and a gate terminal of the second transistor, and between the source terminal of the third transistor of the switch and a gate terminal of the third transistor.

11. The apparatus of claim 6, further comprising a control circuit of the switch.

12. The apparatus of claim 6, further comprising an overcurrent detection circuit coupled to a drain terminal of the third transistor of the switch.

13. The apparatus of claim 12, wherein the overcurrent detection circuit comprises an internal voltage compensation circuit.

14. The apparatus of claim 6, further comprising an overvoltage detection circuit coupled to a drain terminal of the first transistor of the switch.

15. An electronic system comprising: an electronic device; a charging device; and an overvoltage and overcurrent protection device, the overcurrent and overvoltage protection device comprising: a switch, the switch comprising: a first N-channel metal oxide semiconductor (NMOS) transistor adapted to receive a first voltage across its conductive terminals; a second NMOS transistor including a source terminal coupled to a source terminal of the first transistor and adapted to receive a second voltage less than the first voltage across its conductive terminals; and a third NMOS transistor including a source terminal coupled to a source terminal of the first transistor and adapted to receive the second voltage across its conductive terminals.

16. The system of claim 15, wherein the second and third transistors of the switch of the overvoltage and overcurrent protection device operate in reverse ohmic mode.

17. The system of claim 15, wherein the switch of the overvoltage and overcurrent protection device further comprises: a fourth NMOS transistor adapted to receive the first voltage across its conductive terminals; a fifth NMOS transistor including a source terminal coupled to a source terminal of the fourth transistor and adapted to receive the second voltage across its conductive terminals; and a sixth NMOS transistor including a source terminal coupled to a source terminal of the fourth transistor and adapted to receive the second voltage across its conductive terminals. a sixth NMOS type transistor comprising a source terminal coupled to a source terminal of the fourth transistor and adapted to receive the second voltage across its conductive terminals.

18. The system of claim 15, wherein the switch of the overvoltage and overcurrent protection device further comprises: a controllable voltage source; and a management circuit of the controllable voltage source; wherein the controllable voltage source is adapted to provide a voltage between the source terminal of the second transistor of the switch and a gate terminal of the second transistor, and between the source terminal of the third transistor of the switch and a gate terminal of the third transistor.

19. The device of claim 15, further comprising an overcurrent detection circuit coupled to a drain terminal of the third transistor of the switch of the overvoltage and overcurrent protection device; and an overvoltage detection circuit coupled to a drain terminal of the first transistor of the switch of the overvoltage and overcurrent protection device.

20. The device of claim 19, wherein the overcurrent detection circuit comprises an internal voltage compensation circuit.

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