Composite ceramic substrate and method for manufacturing same
By using Group IV metals, Group V metals, and titanium hydride as active metal layers on a ceramic substrate and combining them with a solder layer, a high-tensile-strength composite ceramic substrate is formed, which solves the problems of electromigration and high cost caused by high silver content in the prior art.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-03
- Publication Date
- 2026-03-10
AI Technical Summary
The use of high silver content in existing ceramic substrate manufacturing methods leads to the possibility of electromigration and excessively high process costs.
The composite ceramic substrate structure includes a ceramic substrate, a circuit board, and a composite bonding structure. Group IV metals, Group V metals, and titanium hydride are used as active metal layers and connected by solder layers, and sintered to form a composite ceramic substrate with high tensile strength.
It effectively improves the possibility of electromigration and reduces process costs, providing tensile strength between 100 N/cm and 340 N/cm.
Smart Images
Figure CN121645671A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a ceramic substrate and its manufacturing method, and more particularly to a composite ceramic substrate and its manufacturing method. Background Technology
[0002] In existing ceramic substrate manufacturing methods, the active-metal-brazing (AMB) process typically uses a high silver content, such as more than 50 wt% or even 70 wt% of the total. However, using a high silver content can lead to the possibility of electromigration and also results in excessively high costs for the active-metal-brazing process. Summary of the Invention
[0003] The technical problem to be solved by the present invention is to provide a composite ceramic substrate and its manufacturing method in view of the shortcomings of the prior art. It can effectively improve the problems of electromigration and high process cost caused by the use of high silver content in the existing ceramic substrate manufacturing methods.
[0004] To address the aforementioned technical problems, one technical solution adopted by the present invention is to provide a composite ceramic substrate, comprising: a ceramic substrate; a circuit board; and a composite bonding structure for bonding the ceramic substrate and the circuit board; wherein the composite bonding structure comprises: a first active metal layer bonded to the ceramic substrate; wherein the first active metal layer comprises an active metal material, and the active metal material is selected from at least one of Group IV metals, Group V metals, and titanium hydride; wherein the Group IV metal is titanium, zirconium, or hafnium, and the Group V metal is vanadium, niobium, or tantalum; a second active metal layer bonded to the circuit board; wherein the second active metal layer is composed of titanium or titanium hydride; a solder layer located between the first active metal layer and the second active metal layer; wherein the solder layer comprises tin and copper; wherein the composite ceramic substrate has a tensile strength between 100 N / cm and 340 N / cm.
[0005] To solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a method for manufacturing a composite ceramic substrate, comprising: a first printing step, wherein a first active metal layer is printed on a ceramic substrate, and a solder layer is printed on the first active metal layer; wherein the first active metal layer comprises an active metal material, and the active metal material is selected from at least one of group IV metals, group V metals, and titanium hydride; wherein the group IV metal is titanium, zirconium, or hafnium, and the group V metal is vanadium, niobium, or tantalum; wherein the solder layer comprises tin and copper; a second printing step, wherein a second active metal layer is printed on a circuit board; wherein the second active metal layer is composed of titanium or titanium hydride; a combination step, wherein one side of the circuit board having the second active metal layer formed is combined with one side of the ceramic substrate having the first active metal layer and the solder layer formed; and a sintering step, wherein the sintering is performed at a temperature between 800°C and 100°C and 5×10⁻⁶ molten metals. -6 Up to 5×10 -4 The pressure between the supports is applied to the assembled circuit board, the first active metal layer, the second active metal layer, the solder layer, and the ceramic substrate for sintering for 20 to 50 minutes to form a composite ceramic substrate; wherein the composite ceramic substrate has a tensile strength between 100 N / cm and 340 N / cm.
[0006] One of the beneficial effects of the present invention is that the composite ceramic substrate and its manufacturing method provided by the present invention can effectively improve the problems of electromigration and high process cost caused by the use of high silver content in the existing ceramic substrate manufacturing methods by means of the technical solutions of "the first active metal layer comprising an active metal material, and the active metal material being selected from at least one of group IV metals, group V metals and titanium hydride" and "the second active metal layer being composed of titanium or titanium hydride".
[0007] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and illustration only and are not intended to limit the present invention. Attached Figure Description
[0008] Figure 1 This is a schematic diagram of a composite ceramic substrate according to one embodiment of the present invention.
[0009] Figure 2 This is a schematic diagram of a composite ceramic substrate according to another embodiment of the present invention.
[0010] Figure 3 This is a flowchart illustrating a method for manufacturing a composite ceramic substrate according to one embodiment of the present invention.
[0011] Figure 4 This is a flowchart illustrating a method for manufacturing a composite ceramic substrate according to another embodiment of the present invention. Detailed Implementation
[0012] The following specific embodiments illustrate the implementation of the "composite ceramic substrate and its manufacturing method" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, the accompanying drawings of this invention are for simple illustrative purposes only and are not depictions of actual dimensions; this is stated beforehand. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention.
[0013] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein should, as appropriate, include any combination of one or more of the related listed items.
[0014] [Composite ceramic substrate]
[0015] See Figure 1 As shown, Figure 1 This is a schematic diagram of a composite ceramic substrate according to one embodiment of the present invention. The present invention provides a composite ceramic substrate 100. The composite ceramic substrate 100 includes a ceramic substrate 1, a circuit board 2, and a composite bonding structure 3 for bonding the ceramic substrate 1 and the circuit board 2. The composite ceramic substrate 100 may include any form of ceramic substrate 1 and circuit board 2, and the present invention is not limited thereto.
[0016] The composite bonding structure 3 includes a first active metal layer 31, a second active metal layer 32, and a solder layer 33. The first active metal layer 31 is bonded to the ceramic substrate 1, the second active metal layer 32 is bonded to the circuit board 2, and the solder layer 33 is located between the first active metal layer 31 and the second active metal layer 32.
[0017] In this embodiment, the thickness of the first active metal layer 31 is between 3 micrometers and 15 micrometers, the thickness of the second active metal layer 32 is between 3 micrometers and 9 micrometers, and the thickness of the solder layer 33 is between 3 micrometers and 15 micrometers, but the present invention is not limited thereto. Optionally, the thickness of the first active metal layer 31 is between 6 micrometers and 12 micrometers, the thickness of the second active metal layer 32 is between 4 micrometers and 8 micrometers, and the thickness of the solder layer 33 is between 6 micrometers and 12 micrometers.
[0018] The first active metal layer 31 comprises an active metal material, and the active metal material is selected from at least one of Group IV metals, Group V metals, and titanium hydride. The Group IV metal is titanium (Ti), zirconium (Zr), or hafnium (Hf), and the Group V metal is vanadium (V), niobium (Nb), or tantalum (Ta).
[0019] In one embodiment, the active metal material is titanium, and the first active metal layer 31 comprises 100 wt% titanium based on a total weight of 100 wt%. In another embodiment, the active metal material is titanium hydride, and the first active metal layer 31 comprises 100 wt% titanium hydride based on a total weight of 100 wt%. In other words, the first active metal layer 31 may be composed solely of titanium or titanium hydride, but the present invention is not limited thereto.
[0020] In one embodiment, the first active metal layer 31 further comprises tin and copper, and the active metal material is titanium. Based on a total weight of 100 wt%, the first active metal layer 31 comprises 27.5 wt% to 47.5 wt% tin, 50 wt% to 70 wt% copper, and 0.1 wt% to 5 wt% titanium. Optionally, based on a total weight of 100 wt%, the first active metal layer 31 comprises 32.5 wt% to 42.5 wt% tin, 55 wt% to 65 wt% copper, and 1 wt% to 4 wt% titanium. More preferably, based on a total weight of 100 wt%, the first active metal layer 31 comprises approximately 37.5 wt% tin, approximately 60 wt% copper, and approximately 2.5 wt% titanium.
[0021] The second active metal layer 32 is composed of titanium or titanium hydride. In other words, the second active metal layer 32 may contain only titanium or titanium hydride and no other metal components.
[0022] The solder layer 33 comprises tin and copper. In one embodiment, based on a total weight of 100 wt%, the solder layer 33 comprises 65 wt% to 85 wt% tin and 15 wt% to 35 wt% copper. Optionally, based on a total weight of 100 wt%, the solder layer 33 comprises 70 wt% to 80 wt% tin and 20 wt% to 30 wt% copper. More preferably, based on a total weight of 100 wt%, the solder layer 33 comprises approximately 75 wt% tin and approximately 25 wt% copper.
[0023] In one embodiment, in addition to tin and copper, the solder layer 33 also comprises titanium. Based on a total weight of 100 wt%, the solder layer 33 comprises 27.5 wt% to 47.5 wt% tin, 50 wt% to 70 wt% copper, and 0.1 wt% to 5 wt% titanium. Optionally, based on a total weight of 100 wt%, the solder layer 33 comprises 32.5 wt% to 42.5 wt% tin, 55 wt% to 65 wt% copper, and 1 wt% to 4 wt% titanium. More preferably, based on a total weight of 100 wt%, the solder layer 33 comprises approximately 37.5 wt% tin, approximately 60 wt% copper, and approximately 2.5 wt% titanium.
[0024] In one embodiment, in addition to tin and copper, the solder layer 33 also comprises titanium hydride. Based on a total weight of 100 wt%, the solder layer 33 comprises 27.5 wt% to 47.5 wt% tin, 50 wt% to 70 wt% copper, and 0.1 wt% to 5 wt% titanium hydride. Optionally, based on a total weight of 100 wt%, the solder layer 33 comprises 32.5 wt% to 42.5 wt% tin, 55 wt% to 65 wt% copper, and 1 wt% to 4 wt% titanium hydride. More preferably, based on a total weight of 100 wt%, the solder layer 33 comprises approximately 37.5 wt% tin, approximately 60 wt% copper, and approximately 2.5 wt% titanium hydride.
[0025] In one embodiment, in addition to tin and copper, the solder layer 33 also comprises silver and titanium. Based on a total weight of 100 wt%, the solder layer 33 comprises 12 wt% to 22 wt% tin, 50 wt% to 60 wt% copper, 20 wt% to 30 wt% silver, and 0.1 wt% to 5 wt% titanium. Optionally, based on a total weight of 100 wt%, the solder layer 33 comprises 14.5 wt% to 19.5 wt% tin, 52.5 wt% to 57.5 wt% copper, 22.5 wt% to 27.5 wt% silver, and 1.5 wt% to 4.5 wt% titanium. More preferably, based on a total weight of 100 wt%, the solder layer 33 comprises approximately 17 wt% tin, approximately 55 wt% copper, approximately 25 wt% silver, and approximately 3 wt% titanium.
[0026] The composite ceramic substrate 100 has a tensile strength between 100 N / cm and 340 N / cm, but the present invention is not limited thereto. Optionally, the tensile strength of the composite ceramic substrate 100 is between 180 N / cm and 340 N / cm. It is worth noting that, based on a total weight of 100 wt% for the composite adhesive structure 3, the composite adhesive structure 3 contains 10 wt% to 80 wt% tin, 20 wt% to 50 wt% titanium, and 0 wt% to 25 wt% silver. In other words, the composite adhesive structure 3 may contain no silver or only a small amount of silver.
[0027] Please see Figure 2 As shown, Figure 2 This is a schematic diagram of a composite ceramic substrate according to another embodiment of the present invention. In this embodiment, the composite ceramic substrate 100 may include two circuit boards 2 and two composite bonding structures 3, and the two circuit boards 2 are bonded to both sides of the ceramic substrate 1 through the two composite bonding structures 3.
[0028] [Manufacturing method of composite ceramic substrate]
[0029] Please see Figure 3 As shown, Figure 3 This is a flowchart illustrating a method for manufacturing a composite ceramic substrate according to one embodiment of the present invention. The present invention also provides a method for manufacturing a composite ceramic substrate, wherein the aforementioned composite ceramic substrate 100 may be obtained by performing the aforementioned method, but the present invention is not limited thereto. The method for manufacturing the composite ceramic substrate includes a first printing step S110, a second printing step S120, a combination step S130, and a sintering step S140. Of course, the method for manufacturing the composite ceramic substrate may include other steps as needed, and the present invention is not limited thereto.
[0030] In the first printing step S110, a first active metal layer 31 is printed on a ceramic substrate 1, and then a solder layer 33 is printed on the first active metal layer 31. The first active metal layer 31 comprises an active metal material, and the active metal material is selected from at least one of Group IV metals, Group V metals, and titanium hydride. The Group IV metal is titanium, zirconium, or hafnium, and the Group V metal is vanadium, niobium, or tantalum.
[0031] In one embodiment, the active metal material is titanium, and the first active metal layer 31 contains 100 wt% titanium based on a total weight of 100 wt%. In one embodiment, the active metal material is titanium hydride, and the first active metal layer 31 contains 100 wt% titanium hydride based on a total weight of 100 wt%.
[0032] In one embodiment, the first active metal layer 31 further comprises tin and copper, and the active metal material is titanium. Based on a total weight of 100 wt% for the first active metal layer 31, the first active metal layer 31 comprises 27.5 wt% to 47.5 wt% tin, 50 wt% to 70 wt% copper, and 0.1 wt% to 5 wt% titanium.
[0033] The solder layer 33 comprises tin and copper. In one embodiment, based on a total weight of 100 wt% for the solder layer 33, the solder layer 33 comprises 65 wt% to 85 wt% tin and 15 wt% to 35 wt% copper.
[0034] In one embodiment, in addition to tin and copper, the solder layer 33 also comprises titanium. Based on a total weight of 100 wt% for the solder layer 33, the solder layer 33 comprises 27.5 wt% to 47.5 wt% tin, 50 wt% to 70 wt% copper, and 0.1 wt% to 5 wt% titanium.
[0035] In one embodiment, in addition to tin and copper, the solder layer 33 also comprises titanium hydride. Based on a total weight of 100 wt% for the solder layer 33, the solder layer 33 comprises 27.5 wt% to 47.5 wt% tin, 50 wt% to 70 wt% copper, and 0.1 wt% to 5 wt% titanium hydride.
[0036] In one embodiment, in addition to tin and copper, the solder layer 33 also comprises silver and titanium. Based on a total weight of 100 wt% for the solder layer 33, the solder layer 33 comprises 12 wt% to 22 wt% tin, 50 wt% to 60 wt% copper, 20 wt% to 30 wt% silver, and 0.1 wt% to 5 wt% titanium.
[0037] Please see Figure 4 As shown, Figure 4 This is a flowchart of a method for manufacturing a composite ceramic substrate according to another embodiment of the present invention. After the first printing step S110, the method for manufacturing the composite ceramic substrate may further include a first baking step S111, in which the ceramic substrate 1 on which the first active metal layer 31 and the solder layer 33 are formed is baked at a temperature between 120°C and 180°C for 20 to 40 minutes.
[0038] In the second printing step S120, a second active metal layer 32 is printed on a circuit board 2. The second active metal layer 32 is composed of titanium or titanium hydride.
[0039] like Figure 4 As shown, after the second printing step S120, the manufacturing method of the composite ceramic substrate may further include a second baking step S121, in which the circuit board 2 on which the second active metal layer 32 is formed is baked at a temperature between 120°C and 180°C for 20 to 40 minutes.
[0040] In the assembly step S130, the side of the circuit board 2 where the second active metal layer 32 is formed is assembled to the side of the ceramic substrate 1 where the first active metal layer 31 and the solder layer 33 are formed.
[0041] In the sintering step S140, the temperature is between 800°C and 100°C and 5×10 -6 Up to 5×10 -4 The pressure between the Torr plates sinters the assembled circuit board 2, the first active metal layer 31, the second active metal layer 32, the solder layer 33, and the ceramic substrate 1 for 20 to 50 minutes to form a composite ceramic substrate 100. Optionally, in the sintering step S140, the pressure is 4 × 10⁻⁶. -5 Up to 6×10 -5 The pressure between the supports sinters the assembled circuit board 2, the first active metal layer 31, the second active metal layer 32, the solder layer 33, and the ceramic substrate 1.
[0042] In this embodiment, the thickness of the first active metal layer 31 is between 3 micrometers and 15 micrometers, the thickness of the second active metal layer 32 is between 3 micrometers and 9 micrometers, and the thickness of the solder layer 33 is between 3 micrometers and 15 micrometers, but the present invention is not limited thereto.
[0043] Furthermore, after the sintering step S140 in one embodiment, the first active metal layer 31, the solder layer 33, and the second active metal layer 32 of the composite bonding structure 3 can gradually be formed into an active metal layer, a connecting structure layer, and a eutectic main structure layer, with the connecting structure layer located between the active metal layer and the eutectic main structure layer. The active metal layer is mainly formed of titanium, the connecting structure layer comprises tin and silver and copper dispersed in the tin, and the eutectic main structure layer is formed of tin and a eutectic structure dispersed in the tin and composed of copper and titanium, but the present invention is not limited thereto.
[0044] [Experimental Data Testing]
[0045] The present invention will now be described in detail with reference to Examples 1 to 6 and Comparative Example 1. However, the following examples are provided only to help understand the present invention, and the scope of the present invention is not limited to these examples.
[0046] Example 1: The first active metal layer contains 37.5 wt% tin, 60 wt% copper and 2.5 wt% titanium, the solder layer contains 37.5 wt% tin, 60 wt% copper and 2.5 wt% titanium, and the second active metal layer contains 100 wt% titanium hydride.
[0047] Example 2: The first active metal layer contains 37.5 wt% tin, 60 wt% copper and 2.5 wt% titanium, the solder layer contains 17 wt% tin, 55 wt% copper, 25 wt% silver and 3 wt% titanium, and the second active metal layer contains 100 wt% titanium hydride.
[0048] Example 3: The first active metal layer contains 100 wt% titanium, the solder layer contains 37.5 wt% tin, 60 wt% copper and 2.5 wt% titanium, and the second active metal layer contains 100 wt% titanium.
[0049] Example 4: The first active metal layer contains 100 wt% titanium hydride, the solder layer contains 37.5 wt% tin, 60 wt% copper and 2.5 wt% titanium hydride, and the second active metal layer contains 100 wt% titanium hydride.
[0050] Example 5: The first active metal layer contains 100 wt% titanium hydride, the solder layer contains 17 wt% tin, 55 wt% copper, 25 wt% silver and 3 wt% titanium, and the second active metal layer contains 100 wt% titanium hydride.
[0051] Example 6: The first active metal layer contains 100 wt% titanium hydride, the solder layer contains 75 wt% tin and 25 wt% copper, and the second active metal layer contains 100 wt% titanium hydride.
[0052] Comparative Example 1: The first active metal layer contains 73 wt% silver, 22 wt% copper and 5 wt% titanium, and the second active metal layer contains 73 wt% silver, 22 wt% copper and 5 wt% titanium.
[0053] The component ratios, thicknesses, tensile strengths, and uniformities of the adhesive structure layers of the composite ceramic substrates in Examples 1 to 6 and Comparative Example 1 are shown in Table 1 below, and the relevant test methods are described below.
[0054] Tensile strength: 90-degree peel test, according to IPC-TM 650 Test methods manual No. 2.4.9 "Peel Strength, Flexible Dielectric Materials".
[0055] Uniformity: Detected using an ultrasonic scanning microscope developed by Sonoscan.
[0056]
[0057]
[0058]
[0059] [Discussion of Test Results]
[0060] As can be seen from Example 6, the composite ceramic substrate exhibits optimal tensile strength and excellent uniformity through a first active metal layer and a second active metal layer composed of titanium hydride, and a solder layer composed of tin and copper. As can be seen from Examples 1 to 5, the first active metal layer can also be composed of titanium, or may further include tin and copper, and the second active metal layer can also be composed of titanium. Furthermore, the solder layer can be composed only of tin and copper, or may include titanium and titanium hydride. As can be seen from Comparative Example 1, a high silver content results in insufficient tensile strength and poor uniformity.
[0061] [Beneficial Effects of the Examples]
[0062] One of the beneficial effects of the present invention is that the composite ceramic substrate and its manufacturing method provided by the present invention can effectively improve the problems of electromigration and high process cost caused by the use of high silver content in the existing ceramic substrate manufacturing methods by means of the technical solutions of "the first active metal layer comprising an active metal material, and the active metal material being selected from at least one of group IV metals, group V metals and titanium hydride" and "the second active metal layer being composed of titanium or titanium hydride".
[0063] The above-disclosed content is only an optional and feasible embodiment of the present invention, and is not intended to limit the claims of the present invention. Therefore, all equivalent technical changes made based on the description and drawings of the present invention are included in the claims of the present invention.
Claims
1. A composite ceramic substrate, characterized by, The composite ceramic substrate comprises: a ceramic substrate; a circuit board; and a composite bonding structure bonding the ceramic substrate and the circuit board; wherein the composite bonding structure comprises: a first active metal layer bonded to the ceramic substrate; wherein the first active metal layer comprises an active metal material selected from at least one of a Group IV metal, a Group V metal, and titanium hydride; wherein the Group IV metal is titanium, zirconium, or hafnium, and the Group V metal is vanadium, niobium, or tantalum; a second active metal layer bonded to the circuit board; wherein the second active metal layer is composed of titanium or titanium hydride; and a solder layer between the first active metal layer and the second active metal layer; wherein the solder layer comprises tin and copper. The composite ceramic substrate has a tensile strength of between 100 N / cm and 340 N / cm.
2. The composite ceramic substrate of claim 1, wherein The active metal material is titanium, and the first active metal layer comprises 100 wt% of titanium based on a total weight of the first active metal layer being 100 wt%.
3. The composite ceramic substrate of claim 1, wherein The active metal material is titanium hydride, and the first active metal layer comprises 100 wt% of titanium hydride based on a total weight of the first active metal layer being 100 wt%.
4. The composite ceramic substrate of claim 1, wherein The first active metal layer further comprises tin and copper, and the active metal material is titanium; wherein the first active metal layer comprises 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium based on a total weight of the first active metal layer being 100 wt%.
5. The composite ceramic substrate of claim 1, wherein The solder layer comprises 65 wt% to 85 wt% of tin and 15 wt% to 35 wt% of copper based on a total weight of the solder layer being 100 wt%.
6. The composite ceramic substrate of claim 1, wherein The solder layer further comprises titanium; wherein the solder layer comprises 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium based on a total weight of the solder layer being 100 wt%.
7. The composite ceramic substrate of claim 1, wherein The solder layer further comprises titanium hydride; wherein the solder layer comprises 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium hydride based on a total weight of the solder layer being 100 wt%.
8. The composite ceramic substrate of claim 1, wherein, The solder layer further comprises silver and titanium; wherein the solder layer comprises 12 wt% to 22 wt% of tin, 50 wt% to 60 wt% of copper, 20 wt% to 30 wt% of silver, and 0.1 wt% to 5 wt% of titanium based on a total weight of the solder layer being 100 wt%.
9. The composite ceramic substrate of claim 1, wherein, The first active metal layer has a thickness of between 3 micrometers and 15 micrometers, the second active metal layer has a thickness of between 3 micrometers and 9 micrometers, and the solder layer has a thickness of between 3 micrometers and 15 micrometers.
10. A method of manufacturing a composite ceramic substrate, characterized by, The method for manufacturing the composite ceramic substrate comprises: a first printing step of printing a first active metal layer on a ceramic substrate, and then printing a solder layer on the first active metal layer; wherein the first active metal layer comprises an active metal material, and the active metal material is selected from at least one of a group IV metal, a group V metal, and titanium hydride; wherein the group IV metal is titanium, zirconium, or hafnium, and the group V metal is vanadium, niobium, or tantalum; and wherein the solder layer comprises tin and copper; a second printing step of printing a second active metal layer on a circuit board; wherein the second active metal layer is composed of titanium or titanium hydride; a combining step of combining the circuit board having the second active metal layer on one side with the ceramic substrate having the first active metal layer and the solder layer on one side; wherein the composite ceramic substrate has a tensile strength between 100 N / cm and 340 N / cm. The first sintering step involves a temperature between 800°C and 100°C and 5×10⁻⁶ sintering cycles. -6 Up to 5×10 -4 The pressure between the substrates is used to sinter the assembled circuit board, the first active metal layer, the second active metal layer, the solder layer and the ceramic substrate for 20 to 50 minutes to form a composite ceramic substrate. After the first printing step, the method of manufacturing the composite ceramic substrate further comprises a first baking step of baking the ceramic substrate having the first active metal layer and the solder layer at a temperature between 120 °C and 180 °C for 20 to 40 minutes.
11. The method of manufacturing a composite ceramic substrate according to claim 10, wherein After the second printing step, the method of manufacturing the composite ceramic substrate further comprises a second baking step of baking the circuit board having the second active metal layer at a temperature between 120 °C and 180 °C for 20 to 40 minutes.
12. The method of manufacturing a composite ceramic substrate according to claim 10, wherein The active metal material is titanium, and the first active metal layer comprises 100 wt% of titanium based on a total weight of the first active metal layer being 100 wt%.
13. The method of manufacturing a composite ceramic substrate according to claim 10, wherein The active metal material is titanium hydride, and the first active metal layer comprises 100 wt% of titanium hydride based on a total weight of the first active metal layer being 100 wt%.
14. The method of manufacturing a composite ceramic substrate according to claim 10, wherein The first active metal layer further comprises tin and copper, and the active metal material is titanium; 15. The method of manufacturing a composite ceramic substrate according to claim 10, wherein wherein the first active metal layer comprises 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium based on a total weight of the first active metal layer being 100 wt%. The solder layer further comprises titanium; wherein the solder layer comprises 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium based on a total weight of the solder layer being 100 wt%.
16. The method of manufacturing a composite ceramic substrate according to claim 10, wherein The solder layer further comprises titanium; wherein the solder layer comprises 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium based on a total weight of the solder layer being 100 wt%.
17. The method of manufacturing a composite ceramic substrate according to claim 10, wherein 18. The method of manufacturing a composite ceramic substrate according to claim 10, wherein 19. The method of manufacturing a composite ceramic substrate according to claim 10, wherein The solder layer further comprises silver and titanium; wherein, based on the total weight of the solder layer being 100 wt%, the solder layer comprises 12 wt% to 22 wt% of tin, 50 wt% to 60 wt% of copper, 20 wt% to 30 wt% of silver, and 0.1 wt% to 5 wt% of titanium.
20. The method of manufacturing a composite ceramic substrate according to claim 10, wherein The thickness of the first active metal layer is between 3 microns and 15 microns, the thickness of the second active metal layer is between 3 microns and 9 microns, and the thickness of the solder layer is between 3 microns and 15 microns.