Semiconductor device

Abstract

The semiconductor device includes a first electrode, a second electrode, a semiconductor member, a third electrode, and a first insulating member. The semiconductor component includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, and a fifth semiconductor region of the second conductivity type. The first partial region is located between the first electrode and the first electrode portion in a first direction from the first electrode toward the second electrode. A second direction from the first electrode portion to the second semiconductor region intersects the first direction. A first insulating member position of the first insulating member in a third direction intersecting a plane including the first direction and the second direction is different from a first electrode portion position of the first electrode portion in the third direction. A first distance along the first direction between the first electrode and the fourth semiconductor region is longer than a second distance along the first direction between the first electrode and the first semiconductor portion.

Description

[0001] Related applications

[0002] This application enjoys priority based on Japanese Patent Application No. 2024-156632 (filed on September 10, 2024). This application incorporates all contents of the basic application by reference to that basic application. Technical Field

[0003] Embodiments of the present invention generally relate to semiconductor devices. Background Technology

[0004] For example, in semiconductor devices, it is desirable to improve performance. Summary of the Invention

[0005] According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a semiconductor component, a third electrode, and a first insulating component. The semiconductor component is disposed between the first electrode and the second electrode. The third electrode includes a first electrode portion. The semiconductor component includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, and a fifth semiconductor region of the second conductivity type. The first semiconductor region includes a first partial region, a second partial region, a third partial region, and a fourth partial region. The fifth semiconductor region includes a first semiconductor portion and a second semiconductor portion continuous with the first semiconductor portion. The second semiconductor portion is electrically connected to the fourth semiconductor region. The first partial region is located between the first electrode and the first electrode portion in a first direction from the first electrode to the second electrode. The second semiconductor region is located between the second partial region and the third semiconductor region in the first direction. A second direction from the first electrode portion to the second semiconductor region intersects the first direction. The direction from the first electrode portion to the third semiconductor region is along the second direction. The fourth semiconductor region is located between the first partial region and the first electrode portion. The position of the first insulating member in the third direction, intersecting the plane including the first and second directions, differs from the position of the first electrode portion in the third direction. The first semiconductor portion is located between the third region and the first insulating member. The second semiconductor portion is located between the first insulating member and the fourth region in a direction intersecting the first direction. The first distance along the first direction between the first electrode and the fourth semiconductor region is longer than the second distance along the first direction between the first electrode and the first semiconductor portion.

[0006] According to this embodiment, a semiconductor device capable of improving characteristics can be provided. Attached Figure Description

[0007] Figure 1 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0008] Figure 2 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0009] Figure 3 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0010] Figure 4 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0011] Figure 5 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0012] Figure 6 This is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0013] Figure 7 This is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0014] Figure 8 This is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0015] Figure 9 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0016] Figure 10 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0017] Figure 11 This is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0018] Figure 12 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0019] Figure 13 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0020] Figure 14 This is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0021] Figure 15 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0022] Figure 16 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0023] Figure 17 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0024] Figure 18 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0025] Figure 19 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0026] Figure 20 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0027] Figure 21 This is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. Detailed Implementation

[0028] Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings.

[0029] The accompanying drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc., do not necessarily have to be the same as in reality. Even when representing the same part, there are cases where the dimensions and ratios of each other are represented differently according to the accompanying drawings.

[0030] In this application specification and figures, elements that are the same as those described with respect to the figures already presented are labeled with the same reference numerals, and detailed descriptions are appropriately omitted.

[0031] (First Implementation)

[0032] Figures 1-5 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0033] Figure 6 as well as Figure 7 This is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0034] Figure 1 yes Figure 6 The cross-sectional view along line B1-B2. Figure 2 yes Figure 6 Sectional view along lines B3-B4. Figure 3 yes Figure 6 Sectional view along lines B5-B6. Figure 4 yes Figure 6 A1-A2 profile view. Figure 5 yes Figure 6 A3-A4 profile view.

[0035] like Figures 1-5 As shown, the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a semiconductor component 10S, and a first insulating component 41. The third electrode 53 includes a first electrode portion 53a. The semiconductor component 10S is disposed between the first electrode 51 and the second electrode 52.

[0036] The first direction D1 from the first electrode 51 to the second electrode 52 is defined as the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the Y-axis direction. A direction perpendicular to both the Z-axis and Y-axis directions is defined as the X-axis direction.

[0037] Semiconductor component 10S includes a first semiconductor region 11 of a first conductivity type, a second semiconductor region 12 of a second conductivity type, a third semiconductor region 13 of a first conductivity type, a fourth semiconductor region 14 of a second conductivity type, and a fifth semiconductor region 15 of a second conductivity type. The first conductivity type is the other between n-type and p-type. The second conductivity type is the other between n-type and p-type. Hereinafter, it is assumed that the first conductivity type is n-type and the second conductivity type is p-type.

[0038] The first semiconductor region 11 may, for example, comprise multiple partial regions. The first semiconductor region 11 may also include, for example, a first partial region 11a, a second partial region 11b, a third partial region 11c, and a fourth partial region 11d, etc. The boundaries of these partial regions may be indistinct or distinct. These partial regions will be described later.

[0039] like Figure 4 as well as Figure 5 As shown, the fifth semiconductor region 15 may also comprise multiple portions. For example, the fifth semiconductor region 15 may include a first semiconductor portion 15a and a second semiconductor portion 15b. The second semiconductor portion 15b is continuous with the first semiconductor portion 15a. Figure 4 As shown, the second semiconductor portion 15b is electrically connected to the fourth semiconductor region 14. Figure 4 In this example, the second semiconductor portion 15b is continuous with the fourth semiconductor region 14. The boundary between the second semiconductor portion 15b and the fourth semiconductor region 14 may be clear or unclear.

[0040] like Figure 1As shown, the first portion region 11a is located between the first electrode 51 and the first electrode portion 53a in the first direction D1 (from the first electrode 51 to the second electrode 52). The second semiconductor region 12 is located between the second portion region 11b and the third semiconductor region 13 of the first semiconductor region 11 in the first direction D1. The second direction D2 from the first electrode portion 53a to the second semiconductor region 12 intersects the first direction D1. The second direction D2 can also be, for example, the Y-axis direction.

[0041] The direction from the first electrode portion 53a toward the third semiconductor region 13 is along the second direction D2. The fourth semiconductor region 14 is located between the first portion region 11a and the first electrode portion 53a.

[0042] exist Figure 6 In the diagram, a solid line represents the pattern of the first insulating component 41, and a dashed line represents the pattern of the third electrode 53. Figure 7 In the diagram, the pattern of the first insulating component 41 is shown in dashed lines, and the pattern of the third electrode 53 is shown in solid lines.

[0043] like Figure 4 As shown, the position of the first insulating member 41 (first insulating member position) on the third direction D3, which intersects the plane containing the first direction D1 and the second direction D2, is different from the position of the first electrode portion 53a (first electrode portion position) on the third direction D3. The third direction D3 can also be, for example, the X-axis direction. For example, the direction from the first insulating member 41 to the first electrode portion 53a includes a component of the third direction D3.

[0044] like Figure 4 As shown, the first semiconductor portion 15a of the fifth semiconductor region 15 is located between the third portion region 11c of the first semiconductor region 11 and the first insulating member 41. The second semiconductor portion 15b is located between the first insulating member 41 and the fourth portion region 11d in a direction intersecting the first direction D1.

[0045] The distance along the first direction D1 between the first electrode 51 and the fourth semiconductor region 14 is defined as the first distance d1. The distance along the first direction D1 between the first electrode 51 and the first semiconductor portion 15a is defined as the second distance d2. The first distance d1 is longer than the second distance d2. For example, the length L15b of the second semiconductor portion 15b along the first direction D1 is longer than the length L14 of the fourth semiconductor region 14 along the first direction D1.

[0046] like Figure 1As shown, the semiconductor device 110 may also include a second insulating component 42. The second insulating component 42 includes a first insulating portion 42a and a second insulating portion 42b. The first insulating portion 42a is located between the first electrode portion 53a and the second semiconductor region 12, and between the first electrode portion 53a and the third semiconductor region 13. The second insulating portion 42b is located between the fourth semiconductor region 14 and the first electrode portion 53a. The second electrode 52 is electrically connected, for example, to the third semiconductor region 13.

[0047] In the semiconductor device 110, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 can, for example, be a potential referenced to the potential of the second electrode 52. The first electrode 51 corresponds, for example, to the drain electrode. The second electrode 52 corresponds, for example, to the source electrode. The third electrode 53 corresponds, for example, to the gate electrode. The semiconductor device 110 is, for example, a transistor. The semiconductor device 110 can also be, for example, a MOS transistor.

[0048] In the semiconductor device 110, by providing a fourth semiconductor region 14 of the second conductivity type, it is possible to suppress the concentration of electric field intensity, for example. This makes it easier to obtain a higher withstand voltage, for example. It is also possible to reduce the electric field applied to the second insulating member 42 (e.g., the gate oxide film).

[0049] In semiconductor device 110, a superjunction structure is formed using a fifth semiconductor region 15 of a second conductivity type and at least a portion (e.g., a fourth portion region 11d) of a first semiconductor region 11. This allows for easy improvement in the impurity concentration of the first conductivity type in the first semiconductor region 11. It also allows for lower on-resistance. A semiconductor device with improved characteristics can be provided.

[0050] In one embodiment, a fifth semiconductor region 15 is disposed between the first insulating member 41 and the first semiconductor region 11 at a location different from the first electrode portion 53a that facilitates switching. Stable characteristics are readily obtained in this fifth semiconductor region 15. For example, the potential of the fifth semiconductor region 15 can be made substantially the same as the potential of the fourth semiconductor region 14. In one example, a deeper trench can also be formed in the first semiconductor region 11, with impurities of a second conductivity type introduced into the sides of the trench. The remaining space in the trench can then be filled using the first insulating member 41.

[0051] In the first reference example, an attempt was made to obtain a fifth semiconductor region 15 by introducing an impurity of a second conductivity type into a deeper location in the first semiconductor region 11. In the first reference example, it is difficult to uniformly and stably introduce the impurity of the second conductivity type into the deeper location. In the first reference example, it is difficult to obtain stable characteristics.

[0052] In the second reference example, an attempt was made to form a deeper trench in the first semiconductor region 11 and to embed the trench using a semiconductor of the second conductivity type. However, in the second reference example, it is difficult to stably embed the deeper trench using the semiconductor. Furthermore, it is difficult to obtain stable characteristics in the second reference example.

[0053] As a third reference example, consider a configuration in which a second conductivity type (p-type) region is provided at a deeper location below the first electrode portion 53a, which facilitates switching. In this third reference example, the second conductivity type region becomes a floating structure, making it difficult to obtain stable characteristics.

[0054] In this embodiment, a semiconductor device 110 with improved characteristics can be stably obtained by utilizing a stable fifth semiconductor region 15.

[0055] like Figure 4 As shown, the first semiconductor portion 15a and the second semiconductor portion 15b are continuous. The fifth semiconductor region 15 may also include a third semiconductor portion 15c. A first insulating member 41 is located between the third semiconductor portion 15c and the second semiconductor portion 15b.

[0056] like Figure 1 As shown, the length of the first electrode portion 53a along the second direction D2 is defined as the first length L1. For example... Figure 4 as well as Figure 5 As shown, the length of the first insulating member 41 along the third direction D3 is defined as the second length L2. The second length L2 is longer than the first length L1. Due to the longer second length L2, for example, a stable fifth semiconductor region 15 can be easily obtained. For example, when the trench for the first electrode portion 53a and the trench for the first insulating member 41 are made with the same aspect ratio, the trench for the first insulating member 41 can be deepened by utilizing the longer second length L2.

[0057] For example, the second length L2 of the first insulating member 41 along the third direction D3 can also be longer than the third length L3 of the second semiconductor portion 15b along the third direction D3. Because the second length L2 is longer, a stable fifth semiconductor region 15 is easily obtained, for example. A longer third length L3 can be easily and stably obtained, for example, through ion implantation.

[0058] like Figure 1 As shown, multiple first electrode portions 53a can also be provided. The multiple first electrode portions 53a are arranged along the second direction D2. For example... Figure 7 As shown, in this example, multiple third electrodes 53 are provided. The multiple third electrodes 53 are strips extending along a third direction D3. The multiple third electrodes 53 are arranged along a second direction D2.

[0059] like Figure 4 as well as Figure 5 As shown, multiple first insulating components 41 can also be provided. The multiple first insulating components 41 are arranged along a third direction D3. For example... Figure 6 As shown, in this example, the plurality of first insulating components 41 are strips extending along the second direction D2. The plurality of first insulating components 41 are arranged along the third direction D3.

[0060] In an embodiment, the concentration of the fifth impurity of the second conductivity type in the fifth semiconductor region 15 may also be lower than the concentration of the second impurity of the second conductivity type in the second semiconductor region 12. For example, the concentration of the fifth impurity may be 1 × 10⁻⁶. 16 cm －3 Above 8×10 17 cm －3 The concentration of the second impurity can also be, for example, 5 × 10⁻⁶. 16 cm －3 Above 1×10 18 cm －3 The concentration of the fourth impurity of the second conductivity type in the fourth semiconductor region 14 can, for example, be 5 × 10⁻⁶. 16 cm －3 Above 1×10 18 cm －3 the following.

[0061] The first impurity concentration of the first conductivity type in the first semiconductor region 11 can also be, for example, 1 × 10⁻⁶. 15 cm －3 Above 5×10 17 cm －3 The concentration of the third impurity of the first conductivity type in the third semiconductor region 13 can, for example, be 1 × 10⁻⁶. 18 cm －3 Above 1×10 21 cm －3 the following.

[0062] like Figure 1 As shown, the semiconductor component 10S may also include a sixth semiconductor region 16 of a first conductivity type. At least a portion of the sixth semiconductor region 16 is disposed in the first direction D1 between the second portion region 11b and the second semiconductor region 12. The concentration of the sixth impurity of the first conductivity type in the sixth semiconductor region 16 may also be higher than the concentration of the first impurity of the first conductivity type in the first semiconductor region 11. The sixth semiconductor region 16 may also be omitted.

[0063] like Figure 1As shown, the semiconductor component 10S may also include a seventh semiconductor region 17 of a second conductivity type and an eighth semiconductor region 18 of a first conductivity type. At least a portion of the second semiconductor region 12 is located between the first electrode portion 53a and the seventh semiconductor region 17. At least a portion of the third semiconductor region 13 is located between the first electrode portion 53a and the eighth semiconductor region 18. The eighth semiconductor region 18 is located between the seventh semiconductor region 17 and the second electrode 52. For example, the concentration of the seventh impurity of the second conductivity type in the seventh semiconductor region 17 is higher than the concentration of the second impurity of the second conductivity type in the second semiconductor region 12. For example, the concentration of the eighth impurity of the first conductivity type in the eighth semiconductor region 18 is higher than the concentration of the third impurity of the first conductivity type in the third semiconductor region 13. A lower resistance can be obtained between the second electrode 52 and the semiconductor component 10S.

[0064] like Figure 1 As shown, in this example, the third semiconductor region 13 (and the eighth semiconductor region 18) is located between the first electrode portion 53a and a portion 52p of the second electrode 52. The first electrode portion 53a is located between the semiconductor component 10S and another portion 52q of the second electrode 52. A portion of the second insulating component 42 is located between the first electrode portion 53a and the other portion 52q of the second electrode 52.

[0065] like Figure 1 As shown, in this example, the semiconductor component 10S further includes a semiconductor layer 10a of a first conductivity type. The semiconductor layer 10a is located between the first electrode 51 and the first semiconductor region 11. The impurity concentration of the first conductivity type in the semiconductor layer 10a is higher than the first impurity concentration of the first conductivity type in the first semiconductor region 11. A lower resistance can be obtained between the first electrode 51 and the semiconductor component 10S. The semiconductor layer 10a may also be a semiconductor substrate.

[0066] Semiconductor component 10S may also contain SiC or Si. Semiconductor component 10S may also contain at least one impurity selected from, for example, the group consisting of 4H-SiC, 6H-SiC, and 3C-SiC. When semiconductor component 10S contains SiC, the first conductivity type impurity may contain, for example, at least one selected from the group consisting of N, P, and As. When semiconductor component 10S contains SiC, the second conductivity type impurity may contain, for example, at least one selected from the group consisting of B, Al, and Ga. Semiconductor component 10S may also have, for example, a compound semiconductor containing Ga.

[0067] Semiconductor component 10S includes a crystal. The first electrode portion 53a of the third electrode 53 includes a side 53s opposite to the second semiconductor region 12 and the third semiconductor region 13 (see reference). Figure 1The side surface 53s can, for example, be along the <11-20> direction of the crystal. This makes it easier to obtain lower on-resistance. For example, the surfaces of the semiconductor regions opposite to the side surface 53s can have the same surface orientation. For example, a symmetrical trench shape can be obtained. This further reduces on-resistance.

[0068] The first electrode 51 may also comprise at least one material selected from the group consisting of Ti, Ni, and Au. The first electrode 51 may also have a multilayer film comprising these materials. The second electrode 52 may, for example, comprise at least one material selected from the group consisting of Al, Cu, Ti, and W. The third electrode 53 may, for example, comprise conductive polycrystalline silicon.

[0069] The first insulating component 41 may also comprise at least one component selected from the group consisting of silicon oxide, resin, and polysilicon. The resin may, for example, comprise polyimide. The conductivity of the polysilicon contained in the first insulating component 41 imparts an impurity concentration that may, for example, be 1 × 10⁻⁶. 16 cm －3 the following.

[0070] like Figure 4 As shown, the third electrode 53 may also include a second electrode portion 53b. The direction from the second electrode portion 53b toward the first electrode portion 53a is along a third direction D3. The direction from at least a portion of the first insulating member 41 toward the second electrode portion 53b is along a first direction D1. In this example, the third electrode 53 is a strip along the third direction D3. The strip-shaped third electrode 53 passes over the plurality of first insulating members 41.

[0071] like Figure 2 As shown, the second electrode portion 53b is located in the second direction D2 between a portion of the first insulating member 41 and another portion of the first insulating member 41. The first insulating member 41 is a strip-shaped component along the second direction D2.

[0072] As already described, the semiconductor device 110 may also include a second insulating member 42. The second insulating member 42 includes a first insulating portion 42a and a second insulating portion 42b. The second insulating portion 42b is disposed between the first insulating member 41 and the second electrode portion 53b.

[0073] Figure 8 This is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0074] Figure 9 as well as Figure 10 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0075] Figure 9 Is with Figure 6The cross-sectional view corresponding to lines B3-B4. Figure 10 Is with Figure 6 The cross-sectional view corresponding to lines A3-A4. Figure 8 This is a schematic top view illustrating the pattern of the third electrode 53. (See attached image.) Figure 8 As shown, in the semiconductor device 111 of the embodiment, the planar shape of the third electrode 53 is grid-like. Otherwise, the configuration of the semiconductor device 111 can be the same as that of the semiconductor device 110.

[0076] like Figure 8 As shown, in the semiconductor device 111, the third electrode 53 is a grid-like structure comprising a portion extending along a second direction D2 and a portion extending along a third direction D3. The portion extending along the second direction D2 corresponds, for example, to the first electrode portion 53a. The portion extending along the third direction D3 corresponds, for example, to the second electrode portion 53b.

[0077] In the semiconductor device 111, multiple first insulating components 41 may also be provided (see reference). Figure 6 The plurality of first insulating components 41 are strips extending along the second direction D2. The plurality of first insulating components 41 are arranged along the third direction D3. A portion of the grid-shaped third electrode 53 (the second electrode portion 53b) overlaps with the plurality of first insulating components 41 in the first direction D1.

[0078] like Figure 9 as well as Figure 10 As shown, a second insulating portion 42b is provided between the second electrode portion 53b included in the third electrode 53 and the first insulating member 41. The aforementioned fourth semiconductor region 14 and fifth semiconductor region 15 are also provided in the semiconductor device 111. For example, a higher withstand voltage can be easily obtained. For example, a lower on-resistance can be obtained. A semiconductor device capable of improving characteristics can be provided.

[0079] Figure 11 This is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0080] Figure 12 as well as Figure 13 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0081] Figure 12 Is with Figure 6 The cross-sectional view corresponding to lines B3-B4. Figure 13 Is with Figure 6 The cross-sectional view corresponding to line A1-A2. Figure 11 The pattern of the first insulating component 41 and the third electrode 53 is illustrated. For example... Figure 11As shown, in the semiconductor device 112 of the embodiment, the first insulating member 41 is strip-shaped, and the third electrode 53 is island-shaped. The configuration of the semiconductor device 112 can also be the same as that of the semiconductor device 110.

[0082] like Figure 11 As shown, a plurality of first insulating components 41 are provided. The plurality of first insulating components 41 are strip-shaped along a second direction D2. The plurality of first insulating components 41 are arranged along a third direction D3. A plurality of first electrode portions 53a are provided. The plurality of first electrode portions 53a are arranged along both the second direction D2 and the third direction D3. One of the plurality of first electrode portions 53a is located in the third direction D3 between one of the plurality of first insulating components 41 and another of the plurality of first insulating components 41.

[0083] like Figure 13 As shown, the direction from a portion of the first insulating member 41 toward the first electrode portion 53a is along the third direction D3. A portion of the first insulating member 41 is located between one of the plurality of first electrode portions 53a and another of the plurality of first electrode portions 53a in the third direction D3. The aforementioned fourth semiconductor region 14 and fifth semiconductor region 15 are also provided in the semiconductor device 112. For example, a higher withstand voltage can be easily obtained. For example, a lower on-resistance can be obtained. A semiconductor device capable of improving characteristics can be provided.

[0084] like Figure 13 As shown, a third electrode wiring 53L electrically connected to the first electrode portion 53a may also be provided. Alternatively, a third insulating portion 42c of the second insulating member 42 may be provided between the third electrode wiring 53L and the second electrode 52.

[0085] Figure 14 This is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0086] Figures 15-20 This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0087] Figure 15 yes Figure 14 The cross-sectional view along line B1-B2. Figure 16 yes Figure 14 Sectional view along lines B3-B4. Figure 17 yes Figure 14 Sectional view along lines B5-B6. Figure 18 yes Figure 14 A1-A2 profile view. Figure 19 yes Figure 14 A3-A4 profile view.

[0088] like Figure 14As shown, in the semiconductor device 113 of the embodiment, the plurality of first insulating members 41 are island-shaped, and the plurality of third electrodes 53 are strip-shaped. The configuration of the semiconductor device 113 may also be the same as that of the semiconductor device 110.

[0089] like Figure 14 As shown, a plurality of third electrodes 53 are provided in the semiconductor device 113. The plurality of third electrodes 53 extend along a third direction D3. Figure 16 As shown, the plurality of third electrodes 53 each include a second electrode portion 53b. A portion of the first insulating member 41 is located in the second direction D2 between one second electrode portion 53b of the plurality of third electrodes 53 and another second electrode portion 53b of the plurality of third electrodes 53.

[0090] like Figure 16 As shown, multiple first insulating components 41 are provided. The third electrode 53 includes a second electrode portion 53b. Figure 14 as well as Figure 18 As shown, the direction from the second electrode portion 53b to the first electrode portion 53a is along a third direction D3 that intersects the plane containing the first direction D1 and the second direction D2. Figure 16 As shown, the second electrode portion 53b is located in the second direction D2 between one portion of the plurality of first insulating members 41 and another portion of the plurality of first insulating members 41.

[0091] like Figure 14 As shown, in the semiconductor device 113, the direction from the first insulating member 41 to the first electrode portion 53a is inclined relative to the second direction D2. The direction from the first insulating member 41 to the first electrode portion 53a is inclined relative to the direction from the second electrode portion 53b to the first electrode portion 53a.

[0092] The fourth semiconductor region 14 and the fifth semiconductor region 15 described above are also provided in the semiconductor device 113. For example, it is easy to obtain a higher withstand voltage. For example, it is possible to obtain a lower on-resistance. A semiconductor device that can improve characteristics can be provided.

[0093] In semiconductor devices 110-113, the sixth semiconductor region 16 may also be omitted.

[0094] (Second Implementation)

[0095] Figure 21 This is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment.

[0096] Figure 21 For example, with Figure 6 The cross-sectional view corresponding to lines B1-B2. For example... Figure 21As shown, in the semiconductor device 120 of the embodiment, the sixth semiconductor region 16 included in the semiconductor component 10S is disposed in the second direction D2 between the first electrode portion 53a and a portion of the first semiconductor region 11 (e.g., the fifth portion region 11e). In the semiconductor device 120, for example, a higher withstand voltage can be easily obtained. For example, a lower on-resistance can be obtained. A semiconductor device capable of improving characteristics can be provided. The configuration described with respect to the semiconductor device 120 can also be applied to any semiconductor device of the first embodiment.

[0097] In this implementation, information related to length and thickness is obtained through observation using electron microscopy, etc. Information related to the material composition is obtained through methods such as SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy Dispersive X-ray Spectroscopy).

[0098] According to the implementation method, a semiconductor device capable of improving characteristics can be provided.

[0099] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, any specific configuration of elements such as electrodes, semiconductor components, and insulating components included in a semiconductor device is included within the scope of the present invention, provided that a person skilled in the art can appropriately select from the known range to similarly implement the present invention and obtain the same effects.

[0100] Furthermore, any combination of two or more elements from each specific example within the technically possible scope is also included within the scope of this invention, as long as it contains the spirit of this invention.

[0101] In addition, all semiconductor devices that can be implemented by those skilled in the art based on appropriate design changes to the semiconductor device described above as embodiments of the present invention are also within the scope of the present invention as long as they contain the spirit of the present invention.

[0102] In addition, it can be understood that any modifications and alterations that can be conceived by those skilled in the art within the scope of the present invention are also within the scope of the present invention.

[0103] While several embodiments of the invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, and are included within the scope of the invention as set forth in the claims and its equivalents.

[0104] Explanation of reference numerals in the attached figures

[0105] 10S: Semiconductor component; 10a: Semiconductor layer; 11-18: First-eighth semiconductor regions; 11a-11e: First-fifth partial regions; 15a-15c: First-third conductor portions; 41, 42: First and second insulating components; 42a-42c: First-third insulating portions; 51-53: First-third electrodes; 52p, 52q: Partial portions; 53L: Third electrode wiring; 53a, 53b: First and second electrode portions; 53s: Side surface; 110-113, 120: Semiconductor device; D1-D3: First-third direction; L1-L3: First-third length; d1, d2: First-second distance.

Claims

1. A semiconductor device, characterized by comprising: Possessing: a first electrode; a second electrode; a semiconductor component provided between the first electrode and the second electrode; a third electrode including a first electrode portion; and a first insulating component, the semiconductor component includes: a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, a third partial region, and a fourth partial region; a second semiconductor region of a second conductivity type; a third semiconductor region of the first conductivity type; a fourth semiconductor region of the second conductivity type; and a fifth semiconductor region of the second conductivity type, the fifth semiconductor region including a first semiconductor portion and a second semiconductor portion continuous with the first semiconductor portion, the second semiconductor portion electrically connected to the fourth semiconductor region, the first partial region is located between the first electrode and the first electrode portion in a first direction from the first electrode toward the second electrode, the second semiconductor region is located between the second partial region and the third semiconductor region in the first direction, a second direction from the first electrode portion toward the second semiconductor region crosses the first direction, a direction from the first electrode portion toward the third semiconductor region is along the second direction, the fourth semiconductor region is located between the first partial region and the first electrode portion, a first insulating component position of the first insulating component in a third direction intersecting a plane including the first direction and the second direction is different from a first electrode portion position of the first electrode portion in the third direction, the first semiconductor portion is located between the third partial region and the first insulating component, the second semiconductor portion is located between the first insulating component and the fourth partial region in a direction intersecting the first direction, a first distance between the first electrode and the fourth semiconductor region in the first direction is longer than a second distance between the first electrode and the first semiconductor portion in the first direction.

2. The semiconductor device according to claim 1, wherein the first semiconductor portion is continuous with the second semiconductor portion.

3. The semiconductor device according to claim 1, wherein a fifth impurity concentration of the second conductivity type in the fifth semiconductor region is lower than a second impurity concentration of the second conductivity type in the second semiconductor region.

4. The semiconductor device according to claim 1, wherein the first insulating component includes at least one selected from the group consisting of silicon oxide, resin, and polycrystal silicon.

5. The semiconductor device according to claim 1, wherein The concentration of the impurity that gives conductivity to the polysilicon is 1 x 10 16 cm －3 -3 or less, and the concentration of the impurity that gives conductivity to the polysilicon is 1 x 10 -4 or less. a second length of the first insulating component in the third direction is longer than a first length of the first electrode portion in the second direction.

6. The semiconductor device according to claim 1, wherein a second length of the first insulating component in the second direction is longer than a third length of the second semiconductor portion in the second direction. ​ 7. The semiconductor device according to claim 1, wherein the semiconductor member includes a crystal, the first electrode portion includes a side surface facing the second semiconductor region and the third semiconductor region, the side surface is along a <11-20> direction of the crystal.

8. The semiconductor device according to claim 1, wherein the semiconductor member includes SiC.

9. The semiconductor device according to claim 1, further comprising a second insulating member including a first insulating portion and a second insulating portion, the first insulating portion is between the first electrode portion and the second semiconductor region and between the first electrode portion and the third semiconductor region, the second insulating portion is between the fourth semiconductor region and the first electrode portion.

10. The semiconductor device according to claim 9, wherein a part of the second insulating member is between the first electrode portion and the second electrode.

11. The semiconductor device according to claim 1, wherein a plurality of the first electrode portions are provided, the plurality of the first electrode portions are arranged in the second direction.

12. The semiconductor device according to claim 1, wherein a plurality of the first insulating members are provided, the plurality of the first insulating members are arranged in the third direction.

13. The semiconductor device according to claim 1, wherein the third electrode further includes a second electrode portion, a direction from the second electrode portion to the first electrode portion is along the third direction, a direction from at least a part of the first insulating member to the second electrode portion is along the first direction.

14. The semiconductor device according to claim 13, further comprising a second insulating member including a first insulating portion and a second insulating portion, the second insulating portion is between the first insulating member and the second electrode portion.

15. The semiconductor device according to claim 13, wherein the third electrode is in a lattice shape of a portion extending in the second direction and a portion extending in the third direction.

16. The semiconductor device according to claim 1, wherein a direction from a part of the first insulating member to the first electrode portion is along the third direction.

17. The semiconductor device according to claim 1, wherein the third electrode includes a plurality of the first electrode portions, a part of the first insulating member is between one of the plurality of the first electrode portions and another of the plurality of the first electrode portions in the third direction.

18. The semiconductor device according to claim 1, wherein a plurality of the third electrodes are provided, the plurality of the third electrodes respectively further include a second electrode portion, a part of the first insulating member is between one of the second electrode portions of the plurality of the third electrodes and another of the second electrode portions of the plurality of the third electrodes in the second direction. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 19. The semiconductor device according to claim 1, wherein a plurality of the first insulating members are provided, the third electrode further includes a second electrode portion, the second electrode portion is located between one of the plurality of the first insulating members and another of the plurality of the first insulating members in the second direction.

20. The semiconductor device according to claim 1, wherein a direction from the first insulating member to the first electrode portion is inclined with respect to the second direction. ​ ​

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