Flexible device, preparation method thereof and flexible spin electronic device

Abstract

The invention discloses a flexible device and a preparation method thereof and a spin electronic device, the flexible device comprises a flexible substrate and a two-dimensional Van der Waals ferromagnetic material layer arranged on the surface of the flexible substrate, and the two-dimensional Van der Waals ferromagnetic material layer is provided with Skyrmion lattices. Therefore, the two-dimensional Van der Waals ferromagnetic material layer with the skyrmion lattice is integrated on the flexible substrate, so that compatibility of a magnetic material and the flexible substrate is realized, and the flexible device has good magnetic performance and mechanical flexibility.

Description

Technical Field

[0001] This application relates to the field of flexible spintronic devices, specifically to a flexible device, a method for fabricating the same, and a flexible spintronic device. Background Technology

[0002] Spintronic devices utilize the spin polarization of electrons, opening up a new way of storing and processing information that differs from traditional electronic devices. Spintronic devices can be controlled through magnetic layers or spin-orbit coupling (DMI), and can even use spin waves to transmit spin currents. This technology utilizes the spin of electrons rather than their charge, providing new possibilities for improving the performance of electronic devices and reducing energy consumption. With the increasing demand for high-performance, low-power devices, the research and development of spintronic devices has become increasingly important.

[0003] It should be noted that the above statements are only used to provide background information related to this application and do not necessarily constitute prior art. Summary of the Invention

[0004] In a first aspect, this application provides a flexible device, including a flexible substrate and a two-dimensional van der Waals ferromagnetic material layer disposed on the surface of the flexible substrate, the two-dimensional van der Waals ferromagnetic material layer having a skyrmion lattice. Thus, by integrating a two-dimensional van der Waals ferromagnetic material layer with a skyrmion lattice onto a flexible substrate, this application achieves compatibility between the magnetic material and the flexible substrate, and the flexible device of this application possesses excellent magnetic properties and mechanical flexibility.

[0005] In some embodiments, the material of the two-dimensional van der Waals ferromagnetic material layer satisfies the chemical formula Fe. a Ga b Te2, where a is 3-4 and b is 0.8-1.2. Therefore, Fe... a Ga b Te2 (a = 3-4, b = 0.8-1.2) crystals possess a two-dimensional van der Waals structure, and their Curie temperature (330K-367K) is higher than room temperature, meaning that this ferromagnetic material crystal exhibits magnetism at room temperature. Simultaneously, through the stacking of van der Waals forces, this ferromagnetic material possesses good mechanical properties and flexibility, making it compatible with flexible substrates.

[0006] In some embodiments, the flexible substrate is made of at least one of polyethylene phthalate, polyethylene terephthalate, and polyimide. Therefore, the selection of a suitable flexible substrate material can increase the flexibility and durability of the flexible device.

[0007] In some embodiments, the thickness of the flexible substrate is 10 μm to 500 μm. Thus, the appropriate selection of the flexible substrate thickness enables the flexible substrate to possess both mechanical flexibility and lightweight properties.

[0008] In some embodiments, the thickness of the two-dimensional van der Waals ferromagnetic material layer is 100 nm to 500 nm. Therefore, choosing a suitable thickness for the two-dimensional van der Waals ferromagnetic material layer can improve the magnetic properties and response speed of the two-dimensional van der Waals ferromagnetic material, as well as increase its storage density and reduce its thermal effects.

[0009] In a second aspect, this application provides a method for fabricating a flexible device, comprising: annealing a two-dimensional van der Waals ferromagnetic material layer to obtain an annealed two-dimensional van der Waals ferromagnetic material layer; wherein the annealing temperature is 40℃-60℃ and the annealing time is 5min-20min; transferring the annealed two-dimensional van der Waals ferromagnetic material layer to the surface of a flexible substrate; and applying stress to the flexible substrate to deform the annealed two-dimensional van der Waals ferromagnetic material layer so that the two-dimensional van der Waals ferromagnetic material layer has a skyrmion lattice, thereby obtaining the flexible device. Thus, the appropriate selection of annealing temperature and time can optimize the crystal structure of the ferromagnetic material, providing conditions for the formation of skyrmions. The fabrication method of the flexible device in this application is highly efficient, requires no introduction of current or voltage, and has low energy loss.

[0010] In some embodiments, the aforementioned method further includes applying a magnetic field to the annealed two-dimensional van der Waals ferromagnetic material layer. Thus, the magnetic field is applied to the two-dimensional van der Waals ferromagnetic material layer during the formation of skyrmions, and the magnetic field can promote the nucleation and ordered arrangement of skyrmions.

[0011] In some embodiments, the stress includes at least one of tensile stress, bending stress, and torsional stress. This provides a variety of stress application methods, allowing for different deformation pathways to form skyrmion lattices.

[0012] In some embodiments, the strain of the two-dimensional van der Waals ferromagnetic material layer is 0.4%-1.2%. Thus, when the strain of the two-dimensional van der Waals ferromagnetic material layer reaches 0.4%-1.2%, the two-dimensional van der Waals ferromagnetic material layer has a skyrmion lattice.

[0013] In some embodiments, the two-dimensional van der Waals ferromagnetic material layer is obtained by mechanical exfoliation. Thus, mechanical exfoliation can obtain a two-dimensional ferromagnetic material layer from a bulk ferromagnetic material crystal, maintaining the uniformity and integrity of the two-dimensional ferromagnetic material layer.

[0014] In a third aspect, this application provides a flexible spintronic device, including the aforementioned flexible device or a flexible device obtained by the aforementioned flexible device fabrication method. Thus, the flexible spintronic device combines the characteristics of flexible devices with the applications of spintronics, providing new possibilities for applications in fields such as storage, logic operations, and quantum computing. Attached Figure Description

[0015] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0016] Figure 1 This is a graph showing the relationship between the 2D peak positions of monolayer graphene and the strain of Fe3GaTe2 in one embodiment of this application.

[0017] Figure 2 This is a dynamic process diagram showing the change of magnetic domain structure of the Fe3GaTe2 layer with strain in Example 1.

[0018] Figure 3 This is a transport characteristic curve of Fe3GaTe2 in one embodiment of this application.

[0019] Figure 4 This is a tensile test diagram of a flexible device according to one embodiment of this application.

[0020] Figure 5 The images show the state diagrams of the skyrmion lattice after the flexible device in one embodiment of this application has undergone 1000 and 2000 stretches, respectively.

[0021] Figure 6 This is a bending test diagram of a flexible device according to one embodiment of this application.

[0022] Figure 7 The images show the state diagrams of the skyrmion lattice after the flexible device in one embodiment of this application has undergone 1000 and 2000 bending cycles, respectively.

[0023] Figure 8 This is a torsion test diagram of a flexible device according to one embodiment of this application.

[0024] Figure 9 The images show the state diagrams of the skyrmion lattice after the flexible device in one embodiment of this application has undergone 1000 and 2000 torsion cycles, respectively.

[0025] Figure 10 This is a dynamic process diagram showing the change of magnetic domain structure of the Fe3GaTe2 layer with strain in Example 2.

[0026] Figure 11 This is a dynamic process diagram showing the change of magnetic domain structure of the Fe3GaTe2 layer with strain in Example 3. Detailed Implementation

[0027] The following detailed description, with appropriate reference to the accompanying drawings, discloses the flexible device and its fabrication method, as well as embodiments of the flexible spintronic device. However, unnecessary details may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided for the purpose of enabling those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0028] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is also expected that ranges of 60-110 and 80-120 are also included. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is stated as an integer ≥2, it is equivalent to disclosing that the parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0029] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0030] Unless otherwise specified, all technical features and optional technical features of this application may be combined to form new technical solutions.

[0031] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used in this application is for the purpose of describing particular embodiments only and is not intended to limit this application; unless otherwise stated, the values ​​of the parameters mentioned in this application can be measured using various measurement methods commonly used in the art (e.g., they can be tested according to the methods given in the embodiments of this application).

[0032] In the description of this application, "A and / or B" can include any of the cases of A alone, B alone, or A and B, where A and B are merely examples and can be any technical feature connected by "and / or" in this application.

[0033] Magnetic materials play a central role in the research of flexible spintronic devices. They are crucial not only for achieving non-volatile information storage but also for advanced applications such as logic operations and quantum computing. However, most magnetic materials currently exist in a rigid form, which is incompatible with the mechanical flexibility required for flexible devices, thus limiting their application in flexible spintronic devices. Therefore, developing a flexible device that maintains both mechanical flexibility and enhanced magnetic properties has become an urgent problem to be solved.

[0034] In a first aspect of this application, a flexible device is provided, including a flexible substrate and a two-dimensional van der Waals ferromagnetic material layer disposed on the surface of the flexible substrate, the two-dimensional van der Waals ferromagnetic material layer having a skyrmion lattice.

[0035] Three-dimensional ferromagnetic materials are limited in terms of spin transport and domain wall movement due to their size and lattice structure. However, two-dimensional van der Waals ferromagnetic materials can be constructed into layered or thin-film structures at the nanoscale, making it easier to control the electron spin degree of freedom and more efficient in domain wall movement, thereby improving magnetic and electron transport performance. Furthermore, due to their atomic-level thickness and the ability to stack layers through van der Waals forces, two-dimensional van der Waals materials possess good mechanical properties and flexibility, which enhances the compatibility of two-dimensional van der Waals ferromagnetic materials with flexible substrates.

[0036] Skyrmions are topologically stable magnetic structures that exist and remain stable at room temperature. Two-dimensional van der Waals ferromagnetic material layers possess skyrmion lattices. Because skyrmions are small, they can store more information in a smaller area. Therefore, the formation of skyrmion lattices in two-dimensional van der Waals ferromagnetic material layers enables high-density data storage in flexible devices. Furthermore, compared to traditional magnetic storage technologies, skyrmions can be manipulated with smaller currents or localized magnetic fields, requiring less energy for manipulation. The non-volatile nature of skyrmion lattices allows them to maintain their state even after power is lost, improving long-term data stability and security. Therefore, two-dimensional van der Waals ferromagnetic material layers with skyrmion lattices can replace traditional storage cells to fabricate high-density, low-power, and highly stable non-volatile magnetic memories.

[0037] Therefore, this application achieves compatibility between magnetic materials and flexible substrates by integrating a two-dimensional van der Waals ferromagnetic material layer with a skyrmion lattice on a flexible substrate. The flexible device of this application has good magnetic properties and mechanical flexibility.

[0038] In some implementations, the material of the two-dimensional van der Waals ferromagnetic material layer satisfies the chemical formula Fe. a Ga b Te2, where a is 3-4 and b is 0.8-1.2. Therefore, Fe... a Ga b Te2 (a = 3-4, b = 0.8-1.2) crystals possess a two-dimensional van der Waals structure, and their Curie temperature (330K-367K) is higher than room temperature, meaning that this ferromagnetic material crystal exhibits magnetism at room temperature. Simultaneously, through the stacking of van der Waals forces, this ferromagnetic material possesses good mechanical properties and flexibility, making it compatible with flexible substrates.

[0039] Taking Fe3GaTe2 as an example, the Curie temperature of Fe3GaTe2 is about 370K, so Fe3GaTe2 can maintain its ferromagnetic properties at room temperature.

[0040] In some embodiments, the flexible substrate material includes at least one of polyethylene phthalate (PET), polyethylene terephthalate (PEN), and polyimide (PI). PET, PEN, and PI possess good toughness and strength, enabling the flexible substrate to withstand certain mechanical deformations without breakage; simultaneously, these materials exhibit good dimensional stability. Therefore, the selection of a suitable flexible substrate material can increase the flexibility and durability of flexible devices.

[0041] In some embodiments, the thickness of the flexible substrate is 10 μm to 500 μm. Thus, the appropriate selection of the flexible substrate thickness enables the flexible substrate to possess both mechanical flexibility and lightweight properties.

[0042] As an example, the thickness of the flexible substrate can be 10μm, 20μm, 50μm, 100μm, 200μm, 300μm, 400μm or 500μm.

[0043] In some embodiments, the thickness of the two-dimensional van der Waals ferromagnetic material layer is 100 nm to 500 nm. Therefore, choosing an appropriate thickness for the two-dimensional van der Waals ferromagnetic material layer can improve the magnetic properties and response speed of the two-dimensional van der Waals ferromagnetic material, as well as increase its storage density and reduce its thermal effects.

[0044] As an example, the thickness of the two-dimensional van der Waals ferromagnetic material layer can be 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm or 500nm.

[0045] Skyrmions, as carriers of information storage and processing, possess unique advantages in topological stability and nanoscale size. Therefore, to effectively manipulate skyrmions, precise external stimuli are needed to induce their generation or disappearance. Currently, skyrmions are mainly modulated by applying spin-polarized currents. However, the application of current inevitably induces Joule heating in the material, which not only leads to significant energy dissipation but may also negatively impact the long-term stability and reliability of flexible devices.

[0046] Therefore, in a second aspect, this application provides a method for fabricating a flexible device, comprising: annealing a two-dimensional van der Waals ferromagnetic material layer to obtain an annealed two-dimensional van der Waals ferromagnetic material layer; the annealing temperature is 40℃-60℃, and the annealing time is 5min-20min; transferring the annealed two-dimensional van der Waals ferromagnetic material layer to the surface of a flexible substrate; applying stress to the flexible substrate to deform the annealed two-dimensional van der Waals ferromagnetic material layer so that the two-dimensional van der Waals ferromagnetic material layer has a skyrmion lattice, thereby obtaining a flexible device.

[0047] First, a low-temperature annealing process is applied to the two-dimensional van der Waals ferromagnetic material layer. This process causes distortion and deformation of the surface structure of the ferromagnetic material, locally disrupting the inversion symmetry of the material system and modulating local magnetic anisotropy and DMI, thereby influencing the formation of skyrmions and providing conditions for their generation. Second, stress is applied to a flexible substrate, causing it to deform. This deformation is transmitted to the annealed ferromagnetic material layer, inducing its own deformation and resulting in the formation of a skyrmion lattice. Thus, the application of stress allows the ferromagnetic material layer to generate and manipulate skyrmions through strain control without the application of current. This method mitigates energy dissipation caused by Joule heating, thereby reducing the power consumption of the flexible device. Furthermore, the strain-induced skyrmion lattice exhibits stability and uniformity, improving its storage density and read / write speed.

[0048] Therefore, the fabrication method of the flexible device in this application is highly efficient, does not require the introduction of current or voltage, and has low energy loss.

[0049] As an example, the annealing temperature can be 40°C, 45°C, 50°C, 55°C, or 60°C.

[0050] As an example, the annealing time can be 5 min, 7 min, 9 min, 11 min, 13 min, 15 min, 17 min, or 20 min.

[0051] In some embodiments, the aforementioned method further includes applying a magnetic field to the annealed two-dimensional van der Waals ferromagnetic material layer. Thus, the magnetic field is applied to the two-dimensional van der Waals ferromagnetic material layer during the formation of skyrmions, and the magnetic field can promote the nucleation and ordered arrangement of skyrmions.

[0052] In some implementations, the magnetic field strength is 300 Oe. As a result, the energy barrier of the deformed two-dimensional van der Waals ferromagnetic material layer is reduced, and a magnetic field strength of 300 Oe can cause the two-dimensional van der Waals ferromagnetic material layer to evolve from the initial strip magnetic domains into a skyrmion lattice and remain stable.

[0053] In some embodiments, the stress includes at least one of tensile stress, bending stress, and torsional stress. This provides a variety of stress application methods, allowing for different deformation pathways to form skyrmion lattices.

[0054] In some embodiments, the strain of the two-dimensional van der Waals ferromagnetic material layer is 0.4%-1.2%. Thus, when the strain of the two-dimensional van der Waals ferromagnetic material layer reaches 0.4%-1.2%, the two-dimensional van der Waals ferromagnetic material layer has a skyrmion lattice.

[0055] As an example, the dependent variable can be 0.4%, 0.6%, 0.8%, 1.0%, or 1.2%.

[0056] In some implementations, the formation of skyrmion lattices is observed using a magnetic force microscope or a magneto-optical Kerr microscope.

[0057] In some implementations, the strain of two-dimensional van der Waals ferromagnetic materials is calibrated by the shift of the 2D peaks in monolayer graphene. Magnetic force microscopy (MFMS) can directly observe the formation of skyrmions in ferromagnetic materials, providing direct evidence for confirming their presence and distribution. However, MFMS does not provide quantitative information on the strain required to generate skyrmions. Given that the formation and stability of skyrmions are closely related to strain, and that there is a known linear relationship between the 2D Raman peak position changes of monolayer graphene and the strain it experiences, the magnitude of strain applied to the material can be quantitatively analyzed by monitoring the 2D peak position shifts of monolayer graphene. This method not only provides key parameters for controlling skyrmion formation but also allows for the control of skyrmion stability.

[0058] Specifically, taking the ferromagnetic material Fe3GaTe2 as an example, although graphene and Fe3GaTe2 are two different materials with different physical and chemical properties, graphene, due to its excellent conformability, can adhere tightly to the surface of Fe3GaTe2. When Fe3GaTe2 deforms, the strain is transferred to graphene, causing graphene to also deform, thus changing its lattice parameters. This lattice change can be monitored using Raman spectroscopy, allowing us to obtain the relationship between the 2D peak positions of graphene and the applied strain. Since the strain experienced by graphene is consistent with that of Fe3GaTe2, by measuring the 2D peak position shift of graphene, we can indirectly determine the degree of deformation of Fe3GaTe2, thereby indirectly obtaining the relationship between the 2D peak positions of monolayer graphene and the strain of Fe3GaTe2. Figure 1 As shown, the 2D peak position of monolayer graphene exhibits a linear relationship with the strain of Fe3GaTe2. Therefore, the shift of the 2D peak of monolayer graphene can be used as an indirect means to monitor and calibrate the deformation of Fe3GaTe2.

[0059] In some embodiments, the two-dimensional van der Waals ferromagnetic material layer is obtained by mechanical exfoliation. Thus, the two-dimensional ferromagnetic material layer can be obtained from a bulk ferromagnetic material crystal by mechanical exfoliation, while maintaining the uniformity and integrity of the two-dimensional ferromagnetic material layer.

[0060] Taking the ferromagnetic material Fe3GaTe2 as an example, the steps of the mechanical exfoliation method are as follows: First, select Fe3GaTe2 crystal as the starting material; attach tape or polydimethylsiloxane (PDMS) film to the surface of Fe3GaTe2 crystal, and use the adhesiveness of the tape or the viscoelasticity of the PDMS film to peel off the two-dimensional material layer.

[0061] In a third aspect, this application provides a flexible spintronic device, including the aforementioned flexible device or a flexible device obtained by the aforementioned flexible device fabrication method. Thus, the flexible spintronic device combines the characteristics of flexible devices with the applications of spintronics, providing new possibilities for applications in fields such as storage, logic operations, and quantum computing.

[0062] The following specific embodiments illustrate the solution of this application. It should be noted that these embodiments are for illustrative purposes only and should not be considered as limiting the scope of this application. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments whose manufacturers are not specified are all conventional products that can be obtained commercially.

[0063] Example 1

[0064] A flexible device includes a flexible substrate, polyethylene terephthalate (PET), and a two-dimensional van der Waals ferromagnetic material layer, Fe3GaTe2, disposed on the surface of the PET. The Fe3GaTe2 layer has a skyrmion lattice. The Fe3GaTe2 layer has a thickness of 280 nm, and the flexible substrate has a thickness of 300 μm.

[0065] Specifically, the fabrication process of a flexible device is as follows:

[0066] (1) Use blue adhesive tape for mechanical peeling to peel off the Fe3GaTe2 single crystal to obtain the Fe3GaTe2 layer; then adhere the Fe3GaTe2 layer to the surface of the polydimethylsiloxane (PDMS) film.

[0067] (2) Adhere the other side of the PDMS film to the glass plate, place the glass plate with the Fe3GaTe2 layer and the PDMS film on the heating stage, and heat it at 50°C for 10 minutes; after heating, let the glass plate cool naturally to room temperature.

[0068] (3) Transfer the Fe3GaTe2 layer to the surface of a flexible PET substrate;

[0069] (4) Fix the PET flexible substrate on the stress stage; apply tensile stress to the PET flexible substrate to cause deformation of the PET flexible substrate; the deformation of the PET flexible substrate is transferred to the Fe3GaTe2 layer to cause deformation of the Fe3GaTe2 layer;

[0070] (5) The Fe3GaTe2 layer was scanned multiple times using a probe with a magnetic force microscope (MFM) and a magnetic field strength of 300 Oe. When the magnetic force microscope scan showed that Fe3GaTe2 had formed a skyrmion lattice, the application of tensile stress was stopped. At this point, the deformation of the Fe3GaTe2 layer was 0.80%. Figure 2 k).

[0071] Performance testing:

[0072] a. Skyrmion stability test:

[0073] The dynamic process diagram of the magnetic domain structure of the Fe3GaTe2 layer as a function of strain in this embodiment is shown below. Figure 2 As shown.

[0074] Specifically, such as Figure 2 As shown in Figure a, when the Fe3GaTe2 layer is not stretched, its magnetic domain structure is strip-shaped; as Figure 2 As shown in b, magnetic probe scanning of the Fe3GaTe2 layer begins, and its magnetic domain structure starts to change; as... Figure 2As shown in (ck), with the increase of strain in the Fe3GaTe2 layer, the disordered magnetic domain structure of the Fe3GaTe2 layer gradually transforms into a lattice state with uniform size and regular arrangement. When the strain reaches 0.80%, ( Figure 2 k), the Fe3GaTe2 layers form uniformly sized and regularly arranged skyrmion lattice states; such as Figure 2 As shown in (lm), after releasing the strain on the Fe3GaTe2 layer and reapplying the strain to 0.80%, the Fe3GaTe2 layer maintains a skyrmion lattice state; as Figure 2 As shown in (no), with a strain of 0.80%, after erasing the Fe3GaTe2 layer in a 4K Oe magnetic field, the magnetic domain structure of the Fe3GaTe2 layer returned to the stripe state. However, after scanning with a magnetic probe, the magnetic domain structure of the Fe3GaTe2 layer returned to the skyrmion lattice state.

[0075] Therefore, by Figure 2 As shown, the Fe3GaTe2 layer processed by this application can form a skyrmion lattice, and once strain-induced skyrmions are generated, the skyrmions will exist stably.

[0076] b. Transport characteristics of Fe3GaTe2

[0077] The transport characteristics of the flexible device in Example 1 were plotted, and the transport characteristic curve of the Fe3GaTe2 layer is shown in the figure below. Figure 3 As shown. Figure 3 Displaying the topological Hall resistivity R T xy The variation with the increase or decrease of the applied magnetic field, that is, the existence of obvious difference peaks in the low field region, indicates the existence of obvious topological Hall effect components, and also proves the existence of topological spin configuration skyrmions in the Fe3GaTe2 layer.

[0078] c. Stability testing of flexible devices

[0079] The stability of the flexible device in Example 1 was tested by performing multiple tensile, bending, and torsion tests using a tensile torsion testing system.

[0080] The stability testing steps are as follows:

[0081] 1. Select long, flexible devices;

[0082] 2. Mount the flexible device on a dedicated test fixture to ensure stable installation; apply tensile force to the flexible device multiple times using a tensile testing machine;

[0083] 3. Take a new flexible device and install it on a dedicated test fixture to ensure stable installation; repeatedly bend the flexible device.

[0084] 4. Take a new flexible device and install it on a dedicated test fixture to ensure stable installation; repeatedly twist the flexible device.

[0085] The stability test results of Example 1 are as follows: Figures 4-9 As shown, after 1000 and 2000 stretching, 1000 and 2000 bending, and 1000 and 2000 torsion tests, the skyrmion lattice state of the Fe3GaTe2 layer did not change, and the skyrmion lattice of the Fe3GaTe2 layer in Example 1 has good stability.

[0086] Example 2

[0087] The difference between Example 2 and Example 1 lies in the annealing temperature, which is 40°C. The dynamic process of the magnetic domain structure of the Fe3GaTe2 layer as a function of strain in this example is shown in the figure below. Figure 10 As shown.

[0088] Specifically, such as Figure 10 As shown in Figure a, when the Fe3GaTe2 layer is not stretched, its magnetic domain structure is strip-shaped; as Figure 10 As shown in (bi), with the increase of strain in the Fe3GaTe2 layer, the disordered magnetic domain structure of the Fe3GaTe2 layer gradually transforms into an ordered lattice state. When the strain reaches 1.00%, ( Figure 10 i) The Fe3GaTe2 layer forms a skyrmion lattice state; such as Figure 10 As shown in (jl), after releasing the strain on the Fe3GaTe2 layer, the strain was reapplied to 1.00% ( Figure 10 k), the Fe3GaTe2 layer maintains a skyrmion lattice state, and the strain continues to increase to 1.50% ( Figure 10 l), the Fe3GaTe2 layer continues to maintain a skyrmion lattice state. Therefore, by Figure 10 As shown, the Fe3GaTe2 layer processed by this application can form a skyrmion lattice, and once strain-induced skyrmions are generated, the skyrmions will exist stably.

[0089] Figure 10 and Figure 2 The comparison shows that the higher the annealing temperature applied to the Fe3GaTe2 layer, the more successfully skyrmions can be formed under lower deformation conditions.

[0090] Example 3

[0091] The difference between Example 3 and Example 1 lies in the annealing temperature and the thickness of the Fe3GaTe2 layer. In Example 3, the annealing temperature was 60℃, and the thickness of the Fe3GaTe2 layer was 130nm. The dynamic process diagram of the magnetic domain structure of the Fe3GaTe2 layer as a function of strain in this example is shown below. Figure 11 As shown.

[0092] Specifically, such as Figure 11 As shown in Figure a, when the Fe3GaTe2 layer is not stretched, its magnetic domain structure is mostly in the Skyrmion lattice state. This is because, compared to Example 1, the Fe3GaTe2 layer in Example 3 is thinner and has a higher annealing temperature. Therefore, the small strain introduced during the fabrication of the flexible device is sufficient to change the magnetic domain structure of the Fe3GaTe2 layer. Figure 11 As shown in (bc), as the strain of the Fe3GaTe2 layer increases, the entire Fe3GaTe2 layer forms uniformly sized and regularly arranged skyrmion lattice states.

[0093] Figure 11 and Figure 2 The comparison shows that the higher the annealing temperature applied to the Fe3GaTe2 layer and the thinner the Fe3GaTe2 layer, the more successfully skyrmions can be formed under lower deformation conditions.

[0094] Comparative Example 1

[0095] The difference between Comparative Example 1 and Example 1 is that the annealing temperature was 30°C. When the annealing temperature was 30°C, the strain of the Fe3GaTe2 layer increased from 0 to 1.2%, and no skyrmions were detected in the Fe3GaTe2 layer; even with further increases in the strain of the Fe3GaTe2 layer, no skyrmions were detected.

[0096] Comparative Example 2

[0097] The difference between Comparative Example 2 and Example 1 is that the annealing temperature was 70°C. When the annealing temperature was 70°C, the strain of the Fe3GaTe2 layer increased from 0 to 1.2%, and no skyrmions were detected in the Fe3GaTe2 layer; even with further increases in the strain of the Fe3GaTe2 layer, no skyrmions were detected.

[0098] It should be noted that this application is not limited to the above-described embodiments. The above embodiments are merely examples, and any embodiments with the same structure and effect as the technical concept within the scope of this application are included in the technical scope of this application. Furthermore, various modifications that can be conceived by those skilled in the art to the embodiments, and other ways of constructing by combining some of the constituent elements of the embodiments, without departing from the spirit of this application, are also included in the scope of this application.

Claims

1. A flexible device, characterized in that, The flexible device comprises a flexible substrate and a two-dimensional van der Waals ferromagnetic material layer disposed on a surface of the flexible substrate, wherein the two-dimensional van der Waals ferromagnetic material layer has a lattice of skyrmions.

2. The flexible device of claim 1, wherein, The material of the two-dimensional van der Waals ferromagnetic material layer satisfies the chemical formula Fe a Ga b Te2, wherein a is 3-4, and b is 0.8-1.

2.

3. The flexible device according to claim 1 or 2, characterized in that, The material of the flexible substrate comprises at least one of polyethylene terephthalate, polyethylene naphthalate, and polyimide.

4. The flexible device according to claim 1 or 2, characterized in that, The thickness of the flexible substrate is 10 μm-500 μm; and / or, The thickness of the two-dimensional van der Waals ferromagnetic material layer is 100 nm-500 nm.

5. A method of manufacturing a flexible device as claimed in any one of the claims 1-4, characterized in that, The method comprises: annealing the two-dimensional van der Waals ferromagnetic material layer to obtain an annealed two-dimensional van der Waals ferromagnetic material layer; The annealing temperature is 40℃-60℃, and the annealing time is 5 min-20 min; transferring the annealed two-dimensional van der Waals ferromagnetic material layer to a surface of a flexible substrate; applying stress to the flexible substrate to deform the annealed two-dimensional van der Waals ferromagnetic material layer so that the two-dimensional van der Waals ferromagnetic material layer has a lattice of skyrmions, thereby obtaining the flexible device.

6. The method of claim 5, wherein, The method further comprises applying a magnetic field to the annealed two-dimensional van der Waals ferromagnetic material layer.

7. The method according to claim 5 or 6, characterized in that, The stress comprises at least one of tensile stress, bending stress, and torsional stress.

8. The method according to claim 5 or 6, characterized in that, The strain of the two-dimensional van der Waals ferromagnetic material layer is 0.4%-1.2%.

9. The method of claim 5 or 6, wherein, The two-dimensional van der Waals ferromagnetic material layer is obtained by a mechanical exfoliation method.

10. A flexible spintronic device, characterized in that, The flexible device is prepared by the method of any one of claims 5-9.

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