Preparation method of high-performance coating based on HiPIMS multi-target high-speed deposition and cutting tool thereof

Abstract

The invention discloses a preparation method of a high-performance coating based on HiPIMS multi-target high-speed deposition and a cutting tool thereof. The preparation method comprises the steps of substrate pretreatment, substrate surface cleaning, multi-target co-sputtering deposition and the like. In the step of multi-target co-sputtering deposition, a plurality of targets of the same type are started, a coating is deposited on the surface of a substrate in a mixed atmosphere of reaction gas and inert gas by adopting a high-power pulse magnetron sputtering technology under the action of substrate bias voltage, and in the deposition process, the coating is deposited on the surface of the substrate on the basis of a preset total pulse power. And the pulse power applied to each single target material is independently regulated and controlled according to a non-uniform power distribution model, so that the pulse power of each target material is distributed in a proportionally decreasing manner. According to the preparation method provided by the invention, the deposition rate can be effectively increased to meet industrial production requirements, and meanwhile, the coating and the cutting tool with the coating can be ensured to have relatively high use performance.

Description

Technical Field

[0001] This invention relates to the field of coating preparation technology, and in particular to a method for preparing high-performance coatings based on HiPIMS multi-target high-speed deposition and its cutting tool. Background Technology

[0002] Hard coating technology is one of the key supporting technologies in modern high-end manufacturing, and its development is of great significance for improving tool performance. Among them, transition metal nitride coatings, especially TiAlN coatings, have become the preferred coating materials for cutting tools, molds, and key mechanical components due to their excellent high-temperature resistance, high hardness, wear resistance, and oxidation resistance. They can maintain stable mechanical properties under harsh machining environments of high speed and high temperature, significantly extend tool life, and improve machining efficiency and workpiece quality.

[0003] In recent years, TiAlTaN coatings have attracted widespread attention as a more promising superhard coating. They have higher hardness, better high-temperature oxidation resistance and lower coefficient of friction than TiAlN coatings, making them particularly suitable for high-performance applications such as high-speed dry cutting and mold surface strengthening.

[0004] However, the full performance of both TiAlN and TiAlTaN coatings largely depends on the fabrication process employed. In traditional DC magnetron sputtering (DC-MS) deposition, deposition rate and coating quality are often mutually restrictive. To improve the deposition rate, researchers typically attempt to increase the power of a single target, adjust the working gas parameters, or increase the number of targets and standardize the power parameters of each target. However, these measures can easily lead to a loose microstructure in the coating, increased internal stress, uneven thickness, and decreased adhesion, making it difficult to achieve high-performance coatings at high deposition rates.

[0005] To overcome the aforementioned technical bottlenecks, high-power pulsed magnetron sputtering (HiPIMS) technology is considered a promising solution. As disclosed in Chinese patent document CN 107278177 B, HiPIMS can generate high-density plasma through extremely high peak power and pulsed discharge, which significantly improves the ionization rate of sputtered particles, thereby helping to form a dense, uniform and strongly adherent coating structure on the substrate.

[0006] However, HiPIMS itself also has inherent defects that restrict its industrial application. One prominent issue is that the deposition rate of a single-target HiPIMS system is typically much lower than that of traditional DC-MS technology, generally ranging from 0.01 nm / s to 0.1 nm / s. This results in low production efficiency and high costs. Although theoretically, the overall deposition rate can be increased by increasing the number of sputtering targets (i.e., using a multi-target system), simple target stacking and power superposition can introduce new problems. For example, when multiple targets operate simultaneously at high power, the synergistic bombardment effect of high-energy ions on the substrate is dramatically enhanced, easily causing excessive internal stress within the coating. This can lead to coating cracking or peeling, resulting in performance degradation such as decreased coating hardness, reduced adhesion, and increased friction coefficient.

[0007] Therefore, there is an urgent need for a method to prepare high-performance HiPIMS coatings by high-speed deposition, which can effectively improve the deposition rate of HiPIMS to meet the needs of industrial production, while ensuring that the coating has high performance. Summary of the Invention

[0008] To address the aforementioned technical problems, this invention provides a method for preparing high-performance coatings based on HiPIMS multi-target high-speed deposition and its cutting tool.

[0009] The technical solution of this invention is:

[0010] A method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition, characterized by comprising the following steps:

[0011] S1 Substrate Pretreatment: The substrate surface is ultrasonically cleaned and dried, placed on a rotating frame inside the cavity, and the cavity is evacuated.

[0012] S2 Substrate Surface Cleaning: In a vacuum environment, inert gas is introduced into the cavity, the bias power supply is turned on, and glow plasma is used to clean the substrate surface.

[0013] S3 Multi-Target Co-Sputtering Deposition: Starting with n identical targets, where n is an integer greater than 2, high-power pulsed magnetron sputtering technology is used to deposit a coating on the substrate surface under continuous substrate bias in a mixed atmosphere of reactive gas and inert gas.

[0014] During the deposition process, the pulse power applied to each target material is independently controlled. The control is as follows: based on a preset total pulse power C, the pulse power of each target material is distributed according to a non-uniform power distribution model so that the deposition rate of the coating is not less than 0.15 nm / s, and the hardness of the deposited coating is not less than 30 GPa, the adhesion is not less than 120 N, and the coefficient of friction is ≤0.4.

[0015] Furthermore, the non-uniform power distribution model is as follows: the pulse power allocated to each target material decreases in proportion as shown in the following formula (1).

[0016] Formula (1):

[0017] ;

[0018] Where, x k Let be the power of the k-th target.

[0019] k is the serial number of the target material, where k = 1, 2, ..., n (integer).

[0020] n is the total number of targets, and n is an integer greater than 2;

[0021] C is the sum of the preset pulse power of all targets;

[0022] r is an empirical constant, 0.90≤r≤0.98.

[0023] The significance of r lies in controlling the decreasing gradient of pulse power for each target. Studies have found that when r < 0.90, the pulse power decreases too drastically, causing the target to be unable to maintain a stable high-power pulse discharge, resulting in a significant reduction in plasma density and consequently a decrease in deposition rate and insufficient film density. When r > 0.98, the pulse power distribution for each target is too uniform, approximating a homogenized power allocation, which cannot effectively suppress the mutual interference of plasmas from multiple targets and makes it difficult to optimize the internal stress of the coating. Only when r is between 0.90 and 0.98, especially the preferred value of 0.95, can high deposition rates and high coating performance be simultaneously achieved through a fine power gradient difference and optimal balanced plasma energy injection, while ensuring that each target operates in a high-efficiency HiPIMS mode.

[0024] Furthermore, the total pulse power C of all the targets is greater than or equal to 20kW, and the pulse power of a single target is less than or equal to 10kW.

[0025] The total pulse power C is one of the decisive factors in the deposition rate. If it is too low, the overall energy input is insufficient, which not only affects the deposition rate but also results in insufficient energy for sputtered particles, making it difficult to form a dense coating structure. Furthermore, if the single-target pulse power is too high, the high-energy ion current generated will excessively bombard the substrate, causing excessive stress inside the coating. When the accumulated stress exceeds the bonding force between the coating and the substrate, it will directly lead to deterioration of the coating adhesion, cracking, or even peeling.

[0026] Furthermore, the peak power of a single target is 35kW to 200kW.

[0027] Furthermore, all the targets are arranged in a uniformly spaced array around the central axis of the rotating frame.

[0028] Furthermore, the rotating frame rotates at a speed of 3 to 15 r / min around its central axis, and the vertical distance between the sputtering surface of each target and the substrate is 150 to 200 mm.

[0029] Furthermore, in step S3, the bias power supply is a negative DC pulse voltage applied to the workpiece, with a voltage of -80 to -150V. The inert gas is argon, the reactant gas is nitrogen, the total gas flow rate of the inert gas and reactant gas is 240 to 320 sccm, and the ratio of the nitrogen flow rate to the argon flow rate is in the range of 30% to 80%. The working gas pressure during the deposition process is 0.2 to 0.8 Pa.

[0030] Furthermore, the target material is TiAl or TiAlTa.

[0031] Furthermore, the matrix is ​​selected from at least one of cemented carbide, cermet, cubic boron nitride, ceramic, polycrystalline diamond, and high-speed steel.

[0032] The present invention also provides a coated cutting tool, characterized in that it comprises a substrate and a coating deposited on the substrate, the coating being prepared by a method of the present invention based on HiPIMS multi-target high-speed deposition of high-performance coating.

[0033] The beneficial technical effects of this invention are:

[0034] Traditional high-power pulsed magnetron sputtering technology is limited in its industrial application due to its low deposition rate, while simply increasing the number of targets or power leads to increased internal stress and performance degradation in the coating. This invention creatively employs a non-uniform power distribution model to finely control the energy injection in a multi-target system, successfully increasing the deposition rate to over 0.15 nm / s, meeting the efficiency requirements of industrial production. Furthermore, all coatings obtained using this method exhibit high performance standards in terms of hardness (≥30 GPa), adhesion (≥120 N), and coefficient of friction (≤0.4), ultimately enabling cutting tools coated with this method to have significant industrial application value. Attached Figure Description

[0035] Figure 1 The images show cross-sectional topography of the coatings in the examples; where (a) is a cross-sectional topography of the coating in Example 1, and (b) is a cross-sectional topography of the coating in Example 7.

[0036] Figure 2 The figures are cross-sectional topographic images of the comparative coatings; (c) is the cross-sectional topographic image of the coating of comparative example 1, (d) is the cross-sectional topographic image of the coating of comparative example 2, and (e) is the cross-sectional topographic image of the coating of comparative example 6.

[0037] Figure 3 The following are surface scratch morphology diagrams of the coatings: (a1) is the surface scratch morphology diagram of the coating of Example 1, (b1) is the surface scratch morphology diagram of the coating of Example 7, (c1) is the surface scratch morphology diagram of the coating of Comparative Example 1, (d1) is the surface scratch morphology diagram of the coating of Comparative Example 2, and (e1) is the surface scratch morphology diagram of the coating of Comparative Example 6.

[0038] Figure 4 The graph shows a comparison of the coating friction coefficients of Examples 1, 7, 1-2, and 6. Detailed Implementation

[0039] In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, the specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0040] Example 1

[0041] This embodiment 1 provides a method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition, which specifically includes the following steps:

[0042] S1 matrix pretreatment

[0043] The substrate was placed in a cleaning container and ultrasonically cleaned with acetone and ethanol for 20 minutes each; then cleaned with deionized water for 10 minutes; and then dried. The dried substrate was then mounted on a rotating frame inside the cavity, and the cavity containing the substrate was evacuated to 3.0 × 10⁻⁶. -3 Pa.

[0044] The substrate in Example 1 is YG8 cemented carbide.

[0045] S2 substrate surface cleaning

[0046] The temperature inside the cavity was heated and stabilized at 400℃. Inert argon gas was introduced, and the argon flow rate was set to 500 sccm. The working pressure inside the cavity was 1.0 Pa. The bias power supply was turned on, and the substrate bias voltage was set to -800V. The substrate surface was cleaned using glow plasma for 25 minutes to remove impurities from the substrate surface and improve the coating adhesion.

[0047] S3 Multitarget Co-sputtering Deposition

[0048] The HiPIMS technology selects a six-target co-sputtering mode to act on the substrate. The specific process is as follows: maintain the chamber temperature at 400℃, adjust the substrate bias voltage to -100V, introduce nitrogen gas as the reaction gas, and make the total gas flow rate of argon and nitrogen mixed in the chamber 250sccm, in which the ratio of nitrogen flow rate to argon flow rate is 50%, and the working gas pressure in the chamber is 0.5Pa.

[0049] In this embodiment 1, six TiAl targets are disposed within the cavity. The Ti and Al content in the TiAl targets is in an equimolar ratio. The six TiAl targets are arranged in a uniformly spaced circular array with the central axis of the rotating frame on which the substrate is mounted as the center point. The six TiAl targets are numbered sequentially from first to sixth targets in a clockwise or counterclockwise order. The vertical distance between the sputtering surface of each TiAl target and the substrate is 170 mm, and the rotating frame rotates around its central axis at a speed of 15 r / min.

[0050] Each TiAl target is independently connected to a HiPIMS pulse power module to independently control the pulse power applied to each TiAl target. This ensures that each target can effectively provide high-energy ions during deposition while avoiding problems such as plasma imbalance or matrix overheating caused by the superposition of energy from multiple targets. The pulse power control of a single target is as follows: based on a preset total pulse power C, the pulse power of each target is distributed according to a non-uniform power distribution model.

[0051] The non-uniform power distribution model is as follows: the pulse power allocated to each target material decreases in proportion as shown in the following formula (1):

[0052] Formula (1): ;

[0053] Where, x k Let x be the power of the k-th target; where x k ≤10kW, more preferably 4kW<x k ≤10kW;

[0054] k is the serial number of the target material, where k = 1, 2, ..., n (integer).

[0055] n is the total number of targets. n is an integer greater than 2, which is more preferred. 3≤n≤8;

[0056] C is the sum of the pulse power of all preset targets, where C≥20kW; more preferably 20kW≤C≤40kW;

[0057] r is an empirical constant, 0.90≤r≤0.98; where r is more preferably 0.95.

[0058] In this embodiment 1, C is set to 40kW and r=0.95.

[0059] The six TiAl targets mentioned above correspond to the first to the sixth targets, respectively. The pulse power (i.e., the average power of each target) of the first to the sixth targets is calculated by formula (1): 7.55kW for the first target, 7.17kW for the second target, 6.81kW for the third target, 6.47kW for the fourth target, 6.15kW for the fifth target, and 5.84kW for the sixth target. Then, according to the pulse power of each target, its corresponding duty cycle and peak power are set independently. The pulse power of each target is the product of the duty cycle and the peak power. The pulse power parameters of the first to the sixth targets are shown in Table 1. High-power pulsed magnetron sputtering of TiAl targets is turned on according to the pulse parameters corresponding to each target, and the deposition time of TiAlN coating is 60min.

[0060] Table 1. Pulse power parameters of the first to sixth targets in Example 1.

[0061] Example 2

[0062] The difference between Example 2 and Example 1 is that:

[0063] (a) The preset total pulse power C is different; in Example 2, C = 30kW.

[0064] (ii) Example 2 uses a total of four TiAl targets;

[0065] (iii) The values ​​of r are different. In Example 2, r = 0.90.

[0066] The pulse power parameters of the first to fourth targets in Example 2 are shown in Table 2. High-power pulsed magnetron sputtering of the TiAl target was initiated according to the pulse parameters corresponding to each target, and the deposition time for the TiAlN coating was 60 minutes.

[0067] Table 2. Pulse power parameters of the first to fourth targets in Example 2.

[0068] Example 3

[0069] The difference between Example 3 and Example 1 is that:

[0070] (a) The number of targets is different; Example 3 has a total of 8 TiAl targets.

[0071] (ii) The values ​​of r are different; in Example 3, r = 0.98.

[0072] (iii) In the S3 multi-target co-sputtering deposition step, the total gas flow rate of the argon and nitrogen mixture in the cavity is 260 sccm, of which the ratio of nitrogen flow rate to argon flow rate is 80%, and the working gas pressure in the cavity is 0.6 Pa.

[0073] The preset total pulse power C in Example 3 is the same as in Example 1, C = 40kW. The pulse power parameters for the first to eighth targets in Example 3 are shown in Table 3. High-power pulsed magnetron sputtering of the TiAl target was initiated according to the pulse parameters corresponding to each target, and the deposition time for the TiAlN coating was 60 minutes.

[0074] The difference between Example 3 and Example 1 is that:

[0075] Table 3. Pulse power parameters of the first to eighth targets in Example 3.

[0076] Example 4

[0077] The only difference between Example 4 and Example 1 is the duty cycle and peak power of each target. The pulse power parameters of the first to sixth targets in Example 4 are shown in Table 4.

[0078] Table 4

[0079] Example 5

[0080] The only difference between Example 5 and Example 1 is the target material. All six targets in Example 5 are TiAlTa targets. The molar ratio of Ti, Al, and Ta in the TiAlTa target is 50:45:5.

[0081] Example 6

[0082] The only difference between Example 6 and Example 3 is the preset total pulse power C, which is 20kW in Example 6. The pulse power parameters for the first to eighth targets in Example 6 are shown in Table 5. High-power pulsed magnetron sputtering of the TiAl target was initiated according to the pulse parameters corresponding to each target, and the deposition time for the TiAlN coating was 60 minutes.

[0083] Table 5

[0084] Example 7

[0085] The difference between Example 7 and Example 1 is that the preset total power C is different; in Example 7, C = 45kW. The pulse power parameters of the first to sixth targets in Example 7 are shown in Table 6.

[0086] Table 6

[0087] Comparative Example 1

[0088] The difference between Comparative Example 1 and Example 1 is that Comparative Example 1 also has six TiAl targets with a preset total power C=40kW. However, the pulse power of the six TiAl targets is not distributed according to the power distribution model provided by the present invention. The pulse power of the six TiAl targets in Comparative Example 1 is the same, which is 6.66kW. Their duty cycle is 7.5% and their peak power is 88.80kW.

[0089] Comparative Example 2

[0090] Compared with Example 1, Comparative Example 2 has the same number of targets, target types, and total power value. The only difference is that r=0.8 in Comparative Example 2. The pulse power parameters of the first to sixth targets in Comparative Example 2 are shown in Table 7.

[0091] Table 7

[0092] Comparative Example 3

[0093] Compared with Example 2, Comparative Example 3 has the same number of targets, target types, and total power value. The only difference is that r=0.85 in Comparative Example 3. The pulse power parameters of the first to sixth targets in Comparative Example 3 are shown in Table 8.

[0094] Table 8

[0095] Comparative Example 4

[0096] The only difference between Comparative Example 4 and Example 1 is the preset total pulse power C. In Comparative Example 4, C = 18 kW. Comparative Example 4 also has six TiAl targets. The pulse power parameters of the first to sixth targets in Comparative Example 4 are shown in Table 9. High-power pulsed magnetron sputtering of the TiAl targets was started according to the pulse parameters corresponding to each target, and the deposition time of the TiAlN coating was 60 min.

[0097] Table 9

[0098] Comparative Example 5

[0099] The only difference between Comparative Example 5 and Example 2 is the preset total pulse power C, which is 40kW in Comparative Example 5. The pulse power parameters for the first to fourth targets in Comparative Example 5 are shown in Table 10. High-power pulsed magnetron sputtering of the TiAl target was initiated according to the pulse parameters corresponding to each target, and the deposition time for the TiAlN coating was 60 minutes.

[0100] Table 10

[0101] Comparative Example 6

[0102] The difference between Comparative Example 6 and Example 1 is that, in the S3 multi-target co-sputtering deposition step, the total gas flow rate of the argon and nitrogen mixture in the cavity is 250 sccm, the ratio of nitrogen flow rate to argon flow rate is 90%, and the working gas pressure in the cavity is 0.5 Pa.

[0103] Comparative Example 7

[0104] The difference between Comparative Example 7 and Example 1 is that, in the S3 multi-target co-sputtering deposition step, the total gas flow rate of the argon and nitrogen mixture in the cavity is 250 sccm, the ratio of nitrogen flow rate to argon flow rate is 20%, and the working gas pressure in the cavity is 0.5 Pa.

[0105] The only difference between Comparative Example 8 and Example 1 is that in the S3 multi-target co-sputtering deposition step, two TiAl targets are provided, which are arranged opposite to each other. The pulse power parameters of the first and second targets in Comparative Example 8 are shown in Table 11.

[0106] Table 11

[0107] The test results of the coatings prepared in Examples 1-7 and Comparative Examples 1-8 are shown in Table 12.

[0108] in:

[0109] Coating thickness was measured using a scanning electron microscope (SEM); the cross-sectional morphology of the coatings in the examples and comparative examples is shown in the figures below. Figure 1 and Figure 2 As shown.

[0110] Deposition rate (nm / s): Deposition rate = coating thickness / deposition time.

[0111] Nanohardness test: The nanohardness (GPa) was measured using a nanoindenter in nanoindentation depth mode (i.e., the indentation depth does not exceed one-tenth of the coating).

[0112] Adhesion testing: The scratch test method was used, with the critical load at which the coating first failed (obvious peeling, cracking) as the quantitative indicator of adhesion. Specifically, the adhesion of each TiAlN coating was quantitatively evaluated under an automatic continuous loading mode with a scratch length of 5 mm, a termination load of 150 N, and a loading speed of 70 N / min. The surface scratch morphology images of the relevant coatings in the examples and comparative examples are shown below. Figure 3 As shown.

[0113] Friction coefficient test: The tribological properties of each coating were tested. A 6mm diameter TC4 alloy ball was used as the grinding ball, and the TiAlN coating surface was subjected to reciprocating wear for 30 minutes at room temperature. The wear area length was 5mm. The friction tester monitored and recorded the friction force changes in real time. The friction coefficient was calculated by dividing the real-time friction force by the constant normal load. The friction coefficient comparison diagrams for the relevant coatings in the examples and comparative examples are shown below. Figure 4 As shown.

[0114] Table 12

[0115] As shown in Table 12, Examples 1-7 not only increased the deposition rate to a high level of 0.159-0.202 nm / s, but also achieved high hardness (≥30.28 GPa), adhesion (≥120 N), and low coefficient of friction (≤0.38) in their corresponding coatings. Example 5, using a TiAlTa target, achieved the highest hardness of 36.86 GPa and a low coefficient of friction of 0.29, demonstrating that the preparation method of this invention is applicable to different types of target materials.

[0116] Under the same total power conditions, although Comparative Example 1 also had a high deposition rate, its adhesion was only 113 N, significantly lower than the 139 N of Example 1. This indicates that while simple power superposition can improve the deposition rate, it will lead to a deterioration in coating adhesion due to the inability to optimize internal stress.

[0117] Since the r values ​​of Comparative Examples 2 and 3 are outside the range defined by this invention, their deposition rates are comparable to their corresponding examples, but their coating performance is significantly degraded. For example, the hardness of Comparative Example 2 is only 27.63 GPa and the coefficient of friction is as high as 0.44, which is significantly worse than the performance of the coatings of Example 1 (r=0.95) and Example 2 (r=0.90).

[0118] Comparative Example 4 failed to meet the requirements for deposition rate (0.142 nm / s) and hardness (26.35 GPa), indicating that a total power C ≥ 20 kW is fundamental to ensuring energy input and coating quality. Similarly, in Comparative Example 5, the pulse power of the single target was too high (greater than 10 kW), resulting in excessive bombardment of the substrate by the generated high-energy ion current, causing excessive stress within the coating and thus deteriorating its performance.

[0119] The coating performance of Comparative Examples 6 and 7, especially in terms of hardness and coefficient of friction, was far inferior to that of Example 1 due to the imbalance of the reactant gas ratio.

[0120] The performance of Comparative Example 8 was poor, indicating that the preparation method described in this invention is for complex systems with three or more targets (n>2), and the dual-target system cannot demonstrate its advantages.

[0121] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition, characterized in that, Includes the following steps: S1 Substrate Pretreatment: The substrate surface is ultrasonically cleaned and dried, placed on a rotating frame inside the cavity, and the cavity is evacuated. S2 Substrate Surface Cleaning: In a vacuum environment, inert gas is introduced into the cavity, the bias power supply is turned on, and glow plasma is used to clean the substrate surface. S3 Multi-Target Co-Sputtering Deposition: Starting with n identical targets, where n is an integer greater than 2, high-power pulsed magnetron sputtering technology is used to deposit a coating on the substrate surface under continuous substrate bias in a mixed atmosphere of reactive gas and inert gas. During the deposition process, the pulse power applied to each target material is independently controlled. The control is as follows: based on a preset total pulse power C, the pulse power of each target material is distributed according to a non-uniform power distribution model so that the deposition rate of the coating is not less than 0.15 nm / s, and the hardness of the deposited coating is not less than 30 GPa, the adhesion is not less than 120 N, and the coefficient of friction is ≤0.

4.

2. The method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition according to claim 1, characterized in that, The non-uniform power distribution model is as follows: the pulse power allocated to each target material decreases in proportion as shown in the following formula (1). Formula (1): ； Where, x k Let be the power of the k-th target. k is the serial number of the target material, where k = 1, 2, ..., n (integer). n is the total number of targets, and n is an integer greater than 2; C is the sum of the preset pulse power of all targets; r is an empirical constant, 0.90≤r≤0.

98.

3. The method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition according to claim 2, characterized in that, The total pulse power of all the targets is C≥20kW, and the pulse power of a single target is ≤10kW.

4. The method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition according to claim 3, characterized in that, The peak power of a single target is 35kW to 200kW.

5. The method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition according to claim 1, characterized in that, All the targets are arranged in a uniformly spaced array around the central axis of the rotating frame.

6. The method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition according to claim 1, characterized in that, The rotating frame rotates at a speed of 3 to 15 r / min around its central axis, and the vertical distance between the sputtering surface of each target and the substrate is 150 to 200 mm.

7. The method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition according to claim 1, characterized in that, In step S3, the bias power supply is a negative DC pulse voltage applied to the workpiece, with a voltage of -80 to -150V. The inert gas is argon, the reactant gas is nitrogen, the total gas flow rate of the inert gas and reactant gas is 240 to 320 sccm, and the ratio of the nitrogen flow rate to the argon flow rate is in the range of 30% to 80%. The working gas pressure during the deposition process is 0.2 to 0.8 Pa.

8. The method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition according to claim 1, characterized in that, The target material is TiAl or TiAlTa.

9. The method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition according to claim 1, characterized in that, The matrix is ​​selected from at least one of cemented carbide, cermet, cubic boron nitride, ceramic, polycrystalline diamond, and high-speed steel.

10. A coated cutting tool, characterized in that, The coating comprises a substrate and a coating deposited on the substrate, wherein the coating is prepared by a method for preparing a high-performance coating based on HiPIMS multi-target high-speed deposition as described in any one of claims 1-9.

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