Silicon photon gyroscope with radiation-proof design

Abstract

The invention provides a silicon photon gyroscope with an anti-radiation design. The silicon photon gyroscope comprises an anti-radiation optical chip module, a radiation hardening signal processing circuit, an intelligent fault-tolerant control unit and an on-orbit self-calibration module, the anti-radiation optical chip module comprises a laser, a beam splitter, an interference ring, a phase modulator and a photoelectric detector; the phase modulator performs phase modulation on the Sagnac phase difference based on the preset half-wave voltage or the calibrated half-wave voltage to form an interference optical signal; the photoelectric detector converts the interference light signal into a phase difference electric signal and outputs the phase difference electric signal to the radiation hardening signal processing circuit; the radiation hardening signal processing circuit is used for obtaining angular velocity data; the intelligent fault-tolerant control unit is used for monitoring the radiation state of the silicon photon gyroscope, and outputting a calibration instruction to the on-orbit self-calibration module if the radiation value is greater than a preset value; the on-orbit self-calibration module is used for obtaining a calibrated half-wave voltage under the condition that a calibration instruction is received, and outputting the calibrated half-wave voltage to the phase modulator; and outputting angular velocity data.

Description

Technical Field

[0001] This invention relates to the fields of optical inertial navigation and micro / nano optoelectronics, and particularly to a radiation-resistant silicon photonic gyroscope. Background Technology

[0002] With the rapid development of silicon photonics technology, silicon photonic gyroscopes (SPGs) have become an important candidate for next-generation high-precision inertial navigation systems due to their advantages such as small size, light weight, low power consumption, and ease of mass production. Their core principle is based on the Sagnac effect: when the system rotates, two beams of light propagating clockwise (CW) and counterclockwise (CCW) generate a phase difference, which can be calculated by interferometric detection of this phase difference. However, existing silicon photonic gyroscopes face four severe challenges in space or nuclear radiation environments:

[0003] (1) Total ionization dose (TID) effect: High-energy protons, electrons and other ionizing radiation generate electron-hole pairs in the dielectric layer, which leads to the accumulation of trap charges at the SiO2 / Si interface, causing problems such as increased waveguide transmission loss, modulator half-wave voltage drift and increased detector dark current.

[0004] (2) Single event effect (SEE): Heavy ions or high-energy particles may bombard the device, which may cause single event upset (SEU) or single event transient (SET), resulting in control logic errors, data loss or system crash.

[0005] (3) Displacement damage (DD): Neutrons or high-energy particles cause lattice displacement, reducing carrier mobility and affecting the response speed and quantum efficiency of photodetectors.

[0006] (4) Thermal-radiation synergistic degradation: The large temperature difference between day and night in the space environment and the exacerbation of the cumulative effect of radiation damage by thermal cycling lead to accelerated degradation of device performance.

[0007] (5) Lack of self-healing and fault tolerance mechanisms: Traditional designs rely solely on shielding protection and do not improve robustness from the perspective of intrinsic device resistance and system-level fault tolerance.

[0008] Some research has attempted to improve the radiation resistance of optoelectronic devices. For example, NASA uses strained quantum well structures in GaAs-based lasers to suppress the TID effect; the European Space Agency (ESA) uses radiation-resistant fibers (such as fluorine-doped silica) in fiber optic gyroscopes, but these are bulky, costly, and difficult to integrate. CN113687452A proposes a radiation-resistant MEMS gyroscope, but it is a mechanical structure and is susceptible to impact; CN115268692B discloses a radiation-hardened CMOS image sensor using SOI technology and redundant logic, but it does not involve silicon photonic gyroscopes.

[0009] In addition, most existing silicon photonic devices are manufactured based on standard CMOS processes, and their SiO2 layers are extremely sensitive to radiation. Long-term exposure to doses above 10 klad(Si) will result in significant performance degradation, which cannot meet the on-orbit lifespan requirements of space missions that last for 5 to 10 years.

[0010] Therefore, there is an urgent need for a radiation-resistant silicon photonic gyroscope that optimizes the entire chain from materials to devices to circuits to systems, in order to achieve high precision, high reliability and long lifespan operation. Summary of the Invention

[0011] This invention provides a radiation-resistant silicon photonic gyroscope that solves the technical problem that existing silicon photonic gyroscopes cannot achieve high precision, high reliability, and long lifespan in space or nuclear radiation environments.

[0012] This invention provides a radiation-resistant silicon photonic gyroscope, including a radiation-resistant optical chip module, a radiation-hardened signal processing circuit, an intelligent fault-tolerant control unit, and an on-orbit self-calibration module;

[0013] The radiation-resistant optical chip module includes a laser, a beam splitter, an interference ring, a phase modulator, and a photodetector. The laser emits a beam that is split into two paths by the beam splitter and enters the interference ring. The two laser paths rotate clockwise and counterclockwise within the interference ring, respectively, generating a Sagnac phase difference. The phase modulator modulates the Sagnac phase difference based on a preset half-wave voltage or a calibrated half-wave voltage to form an interference optical signal. The photodetector converts the interference optical signal into a phase difference electrical signal and outputs it to the radiation hardening signal processing circuit.

[0014] The radiation hardening signal processing circuit is used to demodulate the phase difference electrical signal to obtain angular velocity data, and output it to the on-orbit self-calibration module.

[0015] The intelligent fault-tolerant control unit is used to monitor the radiation state of the silicon photonic gyroscope. If the radiation value is greater than the preset value, it outputs a calibration command to the on-orbit self-calibration module.

[0016] The on-orbit self-calibration module is used to acquire radiation data from the radiation sensor and temperature data from the temperature sensor when a calibration command is received; predict the half-wave voltage based on the radiation data to obtain the required half-wave voltage radiation compensation amount; predict the half-wave voltage based on the temperature data to obtain the required half-wave voltage temperature compensation amount; compensate the preset half-wave voltage based on the required half-wave voltage radiation compensation amount and the required half-wave voltage temperature compensation amount to obtain the calibrated half-wave voltage, and output it to the phase modulator; it is also used to output angular velocity data.

[0017] Preferably, a waveguide composed of silicon nitride and silicon-on-insulator hybrid integrated is provided between the two devices in the radiation-resistant optical chip module for optical path propagation.

[0018] Preferably, waveguides composed of silicon nitride and silicon-on-insulator hybrid integrated are provided between the laser and the beam splitter, and between the interference ring and the phase modulator.

[0019] Preferably, the waveguide structure comprises, from top to bottom, a passivation layer, a waveguide layer, a top silicon layer, a buried layer, and a substrate layer; the passivation layer is a hydrogenated amorphous carbon passivation layer with a hydrogen content greater than 30 at.%; the waveguide layer is made of Si3N4 material and has a ridge structure in the middle; the top silicon layer and the substrate layer are made of Si material; and the buried layer is made of SiO2 material.

[0020] Preferably, the radiation hardening signal processing circuit is used to perform signal demodulation processing on the phase difference electrical signal based on triple-modular redundancy logic and error detection and correction technology.

[0021] Preferably, the silicon photonic gyroscope further includes a first shielding encapsulation structure and a second shielding encapsulation structure; the first shielding encapsulation structure is used to surround the radiation-resistant optical chip module, the radiation-hardening signal processing circuit, the intelligent fault-tolerant control unit, and the on-orbit self-calibration module; the second shielding encapsulation structure is used to surround the radiation-resistant optical chip module.

[0022] Preferably, the first shielding encapsulation structure and the second shielding encapsulation structure adopt a tantalum / tungsten composite shielding layer.

[0023] Preferably, the amount of half-wave voltage radiation compensation to be applied is obtained by the following formula:

[0024] ΔV π =αD(t) β

[0025] In the formula, ΔV π Let denot be the half-wave voltage radiation compensation amount to be applied, D(t) be the radiation data at the current time t, α be the radiation-voltage response coefficient of the optical waveguide, and β be the nonlinear coefficient of the optical waveguide.

[0026] Preferably, the required half-wave voltage temperature compensation amount is obtained by the following formula:

[0027]

[0028] In the formula, ΔV' π V represents the amount of temperature compensation required for the half-wave voltage. π Let L be the preset half-wave voltage, L be the modulation region length of the phase modulator, λ be the operating wavelength, ΔT be the temperature change between the current and previous times, and k be the voltage. neffThe temperature coefficient of the effective refractive index.

[0029] Preferably, the calibrated half-wave voltage is obtained by the following formula:

[0030] V π校准 =V π +ΔV π +ΔV' π

[0031] In the formula, V π校准 This is the calibrated half-wave voltage.

[0032] By applying the technical solution of this invention, a preset half-wave voltage (the half-wave voltage before calibration) is compensated using radiation and temperature data, and the Sagnac phase difference is modulated using the calibrated half-wave voltage to achieve radiation resistance. This invention possesses resistance to ionizing radiation (TID), single-event effect (SEE), and total dose recovery capabilities, significantly improving the long-term stability and reliability of silicon photonic gyroscopes in space radiation environments. It is suitable for extreme applications such as low-Earth orbit satellites, deep space probes, and nuclear reactor inspection robots. Attached Figure Description

[0033] The accompanying drawings, which form part of this specification, are provided to further illustrate embodiments of the invention and, together with the textual description, explain the principles of the invention. It is obvious that the drawings described below are merely some embodiments of the invention, and those skilled in the art can obtain other drawings based on these drawings without any creative effort.

[0034] Figure 1 A schematic diagram of a radiation-resistant silicon photonic gyroscope according to an embodiment of the present invention is shown.

[0035] Figure 2 A schematic diagram of a waveguide structure provided according to an embodiment of the present invention is shown;

[0036] Figure 3 A schematic diagram of a three-modulus redundancy logic structure according to an embodiment of the present invention is shown;

[0037] Figure 4 A schematic diagram of an on-orbit self-calibration module according to an embodiment of the present invention is shown. Detailed Implementation

[0038] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present invention or its application or use. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0040] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following figures denote similar items; therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0041] like Figure 1 As shown, the present invention provides a radiation-resistant silicon photonic gyroscope, including a radiation-resistant optical chip module, a radiation-hardening signal processing circuit, an intelligent fault-tolerant control unit, and an on-orbit self-calibration module;

[0042] The radiation-resistant optical chip module includes a laser, a beam splitter, an interference ring, a phase modulator, and a photodetector. The laser emits a beam that is split into two paths by the beam splitter and enters the interference ring. The two laser paths rotate clockwise and counterclockwise within the interference ring, respectively, generating a Sagnac phase difference. The phase modulator modulates the Sagnac phase difference based on a preset half-wave voltage or a calibrated half-wave voltage to form an interference light signal. The photodetector converts the interference light signal into a phase difference electrical signal and outputs it to the radiation hardening signal processing circuit. Specifically, when the radiation value is greater than a preset value, the phase modulator modulates the Sagnac phase difference based on the calibrated half-wave voltage; when the radiation value is less than or equal to the preset value, the phase modulator modulates the Sagnac phase difference based on the preset half-wave voltage.

[0043] The radiation hardening signal processing circuit is used to demodulate the phase difference electrical signal to obtain angular velocity data, and output it to the on-orbit self-calibration module.

[0044] The intelligent fault-tolerant control unit is used to monitor the radiation state of the silicon photonic gyroscope. If the radiation value is greater than the preset value, it outputs a calibration command to the on-orbit self-calibration module.

[0045] The on-orbit self-calibration module is used to acquire radiation data from the radiation sensor and temperature data from the temperature sensor when a calibration command is received; predict the half-wave voltage based on the radiation data to obtain the required half-wave voltage radiation compensation amount; predict the half-wave voltage based on the temperature data to obtain the required half-wave voltage temperature compensation amount; compensate the preset half-wave voltage based on the required half-wave voltage radiation compensation amount and the required half-wave voltage temperature compensation amount to obtain the calibrated half-wave voltage, and output it to the phase modulator; it is also used to output angular velocity data.

[0046] To gain a further understanding of the present invention, the following description is provided in conjunction with... Figures 1-4 The radiation-resistant silicon photonic gyroscope of the present invention will be described in detail.

[0047] like Figure 1As shown, a radiation-resistant silicon photonic gyroscope includes a radiation-resistant optical chip module, a radiation-hardened signal processing circuit, an intelligent fault-tolerant control unit, and an on-orbit self-calibration module. The radiation-resistant optical chip module employs a hybrid integrated waveguide combining silicon nitride (Si3N4) and silicon-on-insulator (SOI), with key components utilizing radiation-resistant materials and structures. The radiation-hardened signal processing circuit is based on SOI CMOS technology, integrating triple-mode redundancy (TMR) logic and EDAC error correction. The on-orbit self-calibration module monitors radiation dose drift in real time and dynamically compensates for zero bias and scaling factor. The intelligent fault-tolerant control unit runs a radiation-resistant control algorithm to achieve anomaly detection, mode switching, and data recovery. Furthermore, the silicon photonic gyroscope is encapsulated with multi-level shielding, specifically employing a tantalum (Ta) / tungsten (W) composite shielding layer and localized magnetic shielding.

[0048] Specifically, the silicon photonic gyroscope further includes a first shielding encapsulation structure and a second shielding encapsulation structure; the first shielding encapsulation structure is used to surround the radiation-resistant optical chip module, the radiation-hardening signal processing circuit, the intelligent fault-tolerant control unit, and the on-orbit self-calibration module; the second shielding encapsulation structure is used to surround the radiation-resistant optical chip module. The first and second shielding encapsulation structures employ a tantalum / tungsten composite shielding layer.

[0049] like Figure 2 As shown, a waveguide composed of silicon nitride and silicon-on-insulator hybrid integrated is provided between the two devices in the radiation-resistant optical chip module for optical path propagation. That is, a waveguide composed of silicon nitride and silicon-on-insulator hybrid integrated is provided between the laser and the beam splitter, and between the interference ring and the phase modulator.

[0050] Specifically, the waveguide structure consists of a passivation layer, a waveguide layer, a top silicon layer, a buried layer, and a substrate layer from top to bottom.

[0051] Passivation layer: A 50-100 nm thick hydrogenated amorphous carbon passivation layer is formed on the surface of the ridged silicon nitride (Si3N4) layer by a low-temperature plasma-enhanced chemical vapor deposition (PECVD) process with high hydrogen content (hydrogen content >30 at.%). This achieves efficient radiation protection and performance optimization for the device. For low-dose irradiation below 100 klad (Si), the carrier trap density can be reduced by 30%-50%.

[0052] Waveguide layer: Made of low-loss Si3N4 material, with a thickness of 300nm and a width of 800nm, transmission loss <0.1dB / cm@1550nm, and a bandgap width of ~5eV, thus it is insensitive to ionizing radiation, with TID tolerance >300krad(Si), and only an increase of 0.03dB / cm at 100krad(Si).

[0053] Top silicon layer: The thickness is designed to be 220nm. By thinning the top silicon layer, the accumulation of defects caused by radiation is reduced, thus reducing the impact on light transmission. At the same time, the process is optimized to reduce impurities and improve the quality of silicon crystal, thereby enhancing resistance to radiation particles and reducing radiation loss.

[0054] Buried layer: SiO2, with a thickness of 1-3 μm, located between the top silicon layer and the substrate. Its main function is to achieve optical field confinement to reduce crosstalk, reduce radiation-induced defects by reducing the impurity content of the buried layer, and ensure uniform thickness to prevent abnormal increase in loss.

[0055] Substrate: It is a Si substrate with a thickness of 100-1000μm, which serves as structural support and auxiliary heat dissipation.

[0056] The radiation hardening signal processing circuit is used to demodulate the phase difference electrical signal based on triple modular redundancy (TMR) logic and error detection and correction technology.

[0057] Among them, the triple modular redundancy (TMR) logic is used to protect the critical control circuit, and its specific functions are shown in Table 1.

[0058] Table 1 Key Control Circuits for Triple Modular Redundancy (TMR) Logic Protection

[0059] Application scenarios Triple Modular Redundancy (TMR) Logic Function state machine To prevent the gyroscope from accidentally entering shutdown or calibration mode due to single-event flip. Data Acquisition Timing Ensure accurate ADC sampling timing to avoid data misalignment caused by logic errors. Register output Protect critical parameters such as zero bias and scaling factor from being overwritten by errors. Communication controller Prevent CAN or SPI interfaces from sending incorrect commands via SEU

[0060] like Figure 3 As shown, the TMR structure includes three identical functional logic units, namely logic A, logic B, and logic C; a majority voter whose input is connected to the output of logic A, logic B, and logic C respectively; a common input signal line connected to the input of logic A, logic B, and logic C; and a system output signal line connected to the output of the majority voter.

[0061] Wherein: the functional logic units are the same combinational logic circuits or sequential logic modules, such as flip-flops, adders, state machines or control registers; the majority voter is implemented using combinational logic, and its output follows the "majority rule" principle: when at least two of the three inputs are the same, the output value is the same; all modules are manufactured based on radiation-resistant SOICMOS technology, with symmetrical layout and wiring to reduce the impact of process deviations.

[0062] Three logic units receive the same input signal in parallel, perform independent operations, and output the results. A majority voter compares the three outputs, and the result that accounts for the majority is used as the final system output.

[0063] The working principle of the majority voter is shown in Table 2: its core function is to eliminate the impact of single point of failure or transient error by following the principle of "majority rule", thereby improving the reliability of the system.

[0064] Table 2. Working principle of key control circuits for triple modular redundancy (TMR) logic protection.

[0065]

[0066] like Figure 4 As shown, the on-orbit self-calibration module monitors radiation dose and temperature drift in real time and dynamically compensates for system errors. Table 4 shows the functions of each sub-module in the on-orbit self-calibration module.

[0067] Table 4 Key Control Circuits for Triple Modular Redundancy (TMR) Logic Protection

[0068]

[0069] The specific workflow of the on-orbit self-calibration module is as follows:

[0070] 1. Real-time acquisition: The on-orbit self-calibration module continuously acquires information from the radiation sensor and temperature sensor, which is represented as radiation data D(t) and temperature data T(t);

[0071] 2. Data fusion: Using D(t) and T(t) as input parameters, the model is degraded for prediction;

[0072] 3. Radiation Model Calculation: Using a pre-calibrated radiation drift model, predict the voltage change of the half-wave voltage as introduced by radiation.

[0073] ΔV π =αD(t) β

[0074] In the formula, ΔV π The half-wave voltage radiation compensation amount to be applied is given by D(t), where D(t) is the radiation data at the current time t, α is the radiation-voltage response coefficient of the optical waveguide, with units of V / krad, and β is the nonlinear coefficient of the optical waveguide.

[0075] The specific calculation process for α and β is as follows:

[0076] (1) Prepare multiple sets of tests: Perform different cumulative radiation doses on the same batch of silicon nitride optical waveguides;

[0077] (2) Test the corresponding ΔV π Changes: The increase in measured half-wave voltage at each dose;

[0078] (3) Data fitting: Taking the logarithm of both sides of the above equation, as follows:

[0079] ln(ΔV π )=lnα+lnβD(t)

[0080] At this time, ln(ΔV)π The slope β is linearly related to lnD(t). The slope β is obtained by linear fitting, and then α is obtained by substituting any set of data.

[0081] 4. Generate radiation compensation: via ΔV π =αD(t) β Calculate the required half-wave voltage radiation compensation ΔV based on the measured values ​​of α and β. π :

[0082] 5. Temperature Model Calculation: Using a pre-calibrated temperature drift model, predict the voltage change of the half-wave voltage as a function of temperature.

[0083]

[0084] In the formula, ΔV' π This represents the temperature compensation amount of the half-wave voltage to be applied, expressed in V / ℃. π The preset half-wave voltage, i.e., the half-wave voltage of the phase modulator at the reference temperature, is expressed in V; L is the modulation region length of the phase modulator, expressed in m; λ is the operating wavelength, expressed in nm; ΔT is the temperature change between the current and previous moments, expressed in °C; and kJ / L is the kJ / L. neff The temperature coefficient of the effective refractive index is expressed in °C.

[0085] 6. Closed-loop correction: Compensation control is performed in the on-orbit self-calibration module. Half-wave voltage stability is maintained through dual compensation methods of radiation and temperature. The compensation formula is as follows:

[0086] V π校准 =V π +ΔV π +ΔV' π

[0087] In the formula, V π校准 This is the calibrated half-wave voltage.

[0088] In summary, this invention provides a radiation-resistant silicon photonic gyroscope. It compensates for a preset half-wave voltage (the half-wave voltage before calibration) using radiation and temperature data, and modulates the Sagnac phase difference using the calibrated half-wave voltage to achieve radiation resistance. Furthermore, radiation resistance mechanisms are introduced at the material selection, device structure, and circuit design levels. This invention possesses resistance to ionizing radiation (TID), single-event effect (SEE), and total dose recovery capabilities, significantly improving the long-term stability and reliability of silicon photonic gyroscopes in space radiation environments. It is suitable for extreme applications such as low-Earth orbit satellites, deep space probes, and nuclear reactor inspection robots.

[0089] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0090] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore should not be construed as limiting the scope of protection of this invention.

[0091] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A radiation-resistant silicon photonic gyroscope, characterized in that, This includes a radiation-resistant optical chip module, a radiation-hardened signal processing circuit, an intelligent fault-tolerant control unit, and an on-orbit self-calibration module; The radiation-resistant optical chip module includes a laser, a beam splitter, an interference ring, a phase modulator, and a photodetector. The laser emits a beam that is split into two paths by the beam splitter and enters the interference ring. The two laser paths rotate clockwise and counterclockwise within the interference ring, respectively, generating a Sagnac phase difference. The phase modulator modulates the Sagnac phase difference based on a preset half-wave voltage or a calibrated half-wave voltage to form an interference optical signal. The photodetector converts the interference optical signal into a phase difference electrical signal and outputs it to the radiation hardening signal processing circuit. The radiation hardening signal processing circuit is used to demodulate the phase difference electrical signal to obtain angular velocity data, and output it to the on-orbit self-calibration module. The intelligent fault-tolerant control unit is used to monitor the radiation state of the silicon photonic gyroscope. If the radiation value is greater than the preset value, it outputs a calibration command to the on-orbit self-calibration module. The on-orbit self-calibration module is used to acquire radiation data from the radiation sensor and temperature data from the temperature sensor when a calibration command is received; predict the half-wave voltage based on the radiation data to obtain the required half-wave voltage radiation compensation amount; predict the half-wave voltage based on the temperature data to obtain the required half-wave voltage temperature compensation amount; compensate the preset half-wave voltage based on the required half-wave voltage radiation compensation amount and the required half-wave voltage temperature compensation amount to obtain the calibrated half-wave voltage, and output it to the phase modulator; it is also used to output angular velocity data.

2. The silicon photonic gyroscope according to claim 1, characterized in that, The radiation-resistant optical chip module has a waveguide integrated from silicon nitride and silicon-on-insulator between the two devices that propagate the light path.

3. The silicon photonic gyroscope according to claim 2, characterized in that, Waveguides composed of silicon nitride and silicon-on-insulator hybrid integrated are provided between the laser and the beam splitter, and between the interference ring and the phase modulator.

4. The silicon photonic gyroscope according to claim 2 or 3, characterized in that, The waveguide structure consists of a passivation layer, a waveguide layer, a top silicon layer, a buried layer, and a substrate layer from top to bottom. The passivation layer is a hydrogenated amorphous carbon passivation layer with a hydrogen content greater than 30 at.%. The waveguide layer is made of Si3N4 material and has a ridge structure in the middle. The top silicon layer and the substrate layer are made of Si material. The buried layer is made of SiO2 material.

5. The silicon photonic gyroscope according to claim 1, characterized in that, The radiation hardening signal processing circuit is used to demodulate the phase difference electrical signal based on triple-modular redundancy logic and error detection and correction technology.

6. The silicon photonic gyroscope according to claim 1, characterized in that, The silicon photonic gyroscope further includes a first shielding encapsulation structure and a second shielding encapsulation structure; the first shielding encapsulation structure is used to surround the radiation-resistant optical chip module, the radiation-hardening signal processing circuit, the intelligent fault-tolerant control unit, and the on-orbit self-calibration module; the second shielding encapsulation structure is used to surround the radiation-resistant optical chip module.

7. The silicon photonic gyroscope according to claim 1, characterized in that, The first shielding encapsulation structure and the second shielding encapsulation structure adopt a tantalum / tungsten composite shielding layer.

8. The silicon photonic gyroscope according to claim 1, characterized in that, The required half-wave voltage radiation compensation amount can be obtained using the following formula: ΔV π =αD(t) β In the formula, ΔV π Let denot be the half-wave voltage radiation compensation amount to be applied, D(t) be the radiation data at the current time t, α be the radiation-voltage response coefficient of the optical waveguide, and β be the nonlinear coefficient of the optical waveguide.

9. The silicon photonic gyroscope according to claim 1, characterized in that, The required half-wave voltage temperature compensation amount can be obtained using the following formula: In the formula, ΔV' π V represents the amount of temperature compensation required for the half-wave voltage. π Let L be the preset half-wave voltage, L be the modulation region length of the phase modulator, λ be the operating wavelength, ΔT be the temperature change between the current and previous times, and k be the voltage. neff The temperature coefficient of the effective refractive index.

10. The silicon photonic gyroscope according to claim 1, characterized in that, The calibrated half-wave voltage is obtained using the following formula: V π校准 =V π +ΔV π +ΔV' π In the formula, V π校准 This is the calibrated half-wave voltage.

Images