Ion beam system and grid device and control method thereof

Abstract

The invention discloses an ion beam system and a grid device and a control method thereof, and the ion beam system comprises an ion source which is used for generating and emitting an ion beam; the grid device is at least used for adjusting the emitting speed of the ion beam; the grid mesh device comprises a plurality of grid meshes which are sequentially stacked in the ion beam emitting direction; the sensor is fixed on the grid mesh and is used for acquiring target detection parameters in real time; the target detection parameter is used for determining the working state of the ion beam system. According to the technical scheme, the target detection parameters can be obtained through the sensor arranged on the grid mesh and used for determining the working state of the ion beam system, so that the working state of the ion beam system is detected, the working state of the ion beam system is conveniently adjusted based on operation requirements, and machining operation on the surface of an object is facilitated. And moreover, the sensor is integrated on the grid mesh, so that independent sensor mounting equipment is not needed, and the integration level of the system is improved.

Description

Technical Field

[0001] This application relates to ion beam apparatus, and more specifically, to an ion beam system and its grid device and control method. Background Technology

[0002] Ion beam systems utilize the interaction between high-energy ion beams and object surfaces to achieve specific processing and modification, and are widely used in materials science and surface treatment technologies. Currently, conventional ion beam systems cannot monitor their operational status, hindering surface processing. The lack of real-time monitoring of ion beam systems during the processing further complicates surface handling. Summary of the Invention

[0003] In view of this, this application provides an ion beam system and its grid device and control method, as follows:

[0004] The first aspect of this application provides an ion beam system, comprising:

[0005] An ion source is used to generate and emit an ion beam.

[0006] A grid device, which is used at least to regulate the emission velocity of the ion beam; the grid device includes a plurality of grids stacked sequentially in the ion beam emission direction;

[0007] The sensor, fixed on the grid, is used to acquire target detection parameters in real time; the target detection parameters are used to determine the operating status of the ion beam system.

[0008] Optionally, in the above-described ion beam system, the sensor is communicatively connected to the controller; the controller is used to determine at least one of the operating states of the grid device and the ion source based on the target detection parameters.

[0009] Optionally, in the above-mentioned ion beam system, adjacent grid layers are connected and fixed by an insulating component;

[0010] The insulating components include the sensor.

[0011] Optionally, in the above-described ion beam system, the insulating element includes: a first part and a second part connected to each other; the first part is fixed to one grid; the second part is fixed to another adjacent grid.

[0012] The first part and at least one of the second part have a sensor.

[0013] Optionally, in the above-mentioned ion beam system, the insulating element includes a locking mechanism capable of adjusting the length of the insulating element;

[0014] The operating status of an ion beam system includes the length of the insulating component.

[0015] Optionally, in the above-mentioned ion beam system, at least one grid is provided with an ion beam blocking element, which is used to adjust the uniformity of the ion beam.

[0016] The ion beam blocking device includes a sensor.

[0017] Optionally, in the above-described ion beam system, the ion beam blocking element includes:

[0018] The first baffle and sensor are stacked together;

[0019] Fixtures are used to secure ion beam blocking components to the grid.

[0020] Optionally, in the above-described ion beam system, the ion beam blocking component further includes a second baffle, which is fixed to the sensor on a surface opposite to the first baffle.

[0021] Optionally, in the above-mentioned ion beam system, the grid includes: a body and a plurality of grid holes arranged in a lattice through the body;

[0022] At least one point-shaped or strip-shaped sensor is fixed on the body surface between the grid holes.

[0023] Optionally, in the above-mentioned ion beam system, the target detection parameters can characterize at least one of the following: the degree of deformation of the grid, the flux distribution of the ion beam, and the temperature distribution of the grid.

[0024] Optionally, in the above-mentioned ion beam system, the sensor is communicatively connected to the controller; the controller is used to determine the operating status of the ion beam system based on the target detection parameters.

[0025] The controller can acquire the data map corresponding to the same grid based on the target detection parameters, and determine the working status of the ion beam system based on the data map;

[0026] Among them, the data map can characterize the distribution of target detection parameters in the plane where the grid is located.

[0027] A second aspect of this application provides a grid device for an ion beam system, comprising:

[0028] It includes multiple grids stacked sequentially in the ion beam emission direction;

[0029] The sensor is fixed on the grid and is used to acquire target detection parameters.

[0030] A third aspect of this application provides a control method for the above-mentioned ion beam system, comprising:

[0031] Target detection parameters are acquired in real time through sensors on the grid device;

[0032] The operating status of the ion beam system is determined based on the target detection parameters.

[0033] As described above, the ion beam system, its grid device, and control method provided in this application include sensors mounted on the grid for real-time acquisition of target detection parameters. These parameters determine the operating status of the ion beam system. Therefore, this application's technical solution can acquire target detection parameters through sensors mounted on the grid to determine the operating status of the ion beam system, enabling the detection of the system's operating status. This allows the ion beam system to adjust its operating status based on operational requirements, facilitating surface processing. Furthermore, integrating the sensors onto the grid eliminates the need for separate sensor installation equipment, improving the system's integration level. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0035] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application.

[0036] Figure 1 This is a schematic diagram of the structure of an ion beam system provided in an embodiment of this application;

[0037] Figure 2 This is a schematic diagram of another ion beam system provided in an embodiment of this application;

[0038] Figure 3 This is a schematic diagram of the structure of a grid device provided in an embodiment of this application;

[0039] Figure 4 This is a three-dimensional structural diagram of the insulating component in the grid device;

[0040] Figure 5 A schematic diagram illustrating the distribution of insulating elements between two adjacent grids, provided for an embodiment of this application;

[0041] Figure 6A schematic diagram illustrating another distribution of insulating elements between two adjacent grids provided in an embodiment of this application;

[0042] Figure 7 This is a schematic diagram of another grid device provided in an embodiment of this application;

[0043] Figure 8 This is a schematic diagram of the structure of an ion beam blocking device provided in an embodiment of this application;

[0044] Figure 9 This is a schematic diagram of the structure of another grid device provided in the embodiments of this application;

[0045] Figure 10 for Figure 9 A schematic diagram of the ion beam blocking component in the grid device shown.

[0046] Figure 11 A schematic diagram of the layout of an ion beam blocking device on a grid provided in an embodiment of this application;

[0047] Figure 12 This is a schematic diagram illustrating a layout of a strip sensor mounted on a grid, as provided in an embodiment of this application.

[0048] Figure 13 This is a schematic diagram illustrating the layout of a dot-matrix sensor on a grid, as provided in an embodiment of this application.

[0049] Figure 14 A flowchart illustrating an ion beam system control method provided in an embodiment of this application;

[0050] Figure 15 This is a data map of the grid determined based on target detection parameters.

[0051] Figure label:

[0052] 11-Ion source; 111-Coil; 112-Matching device; 113-RF power supply; 114-Gas path; 115-Ionization chamber; 12-Grid device; 121-Grid; 121a-Shield grid; 121b-Accelerating grid; 13-Sensor; 14-Controller; 15-Insulator; 151-First part; 152-Second part; 153-Locking mechanism; 154-First limiting member; 155-Second limiting member; 16-Ion beam blocking member; 161-Fixing member; 161a-Bolt; 161b-Nut; 162-First baffle; 163-Second baffle; 171-Body; 172-Grid hole. Detailed Implementation

[0053] The embodiments of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0054] Currently, ion beam systems mainly include two types: ion beam etching (IBE) equipment and ion beam deposition (IBD) equipment. Both IBE and IBD equipment are based on the interaction between high-energy ion beams and the surface of an object to perform surface processing operations.

[0055] IBE equipment is a high-precision material removal device that uses an accelerated ion beam to bombard the surface of the object to be treated. The high-energy impact of the ion beam sputters atoms or molecules from the material surface, thereby achieving precise material removal and patterning.

[0056] IBD equipment is a surface coating and thin film growth equipment that uses an ion beam to bombard a target material, directionally sputtering target atoms or molecules to form a plume, which is then deposited onto the surface of the object to be treated to form a uniform and dense thin film.

[0057] As described in the background section, current conventional ion beam systems lack the ability to monitor their own working status in real time during the process. The process includes the thermodynamic stage and the workpiece etching or coating stage. Users cannot intuitively detect the health status of the ion beam system and can only rely on the engineer's experience to infer the working status of the ion beam system in order to determine its health status. Therefore, there is an urgent need for an ion beam system that can intuitively detect its own working status in order to better perform ion beam processing on the surface of the object to be processed.

[0058] In view of this, the technical solution of this application provides an ion beam system.

[0059] include:

[0060] An ion source is used to generate and emit an ion beam.

[0061] A grid device, which is used at least to regulate the emission velocity of the ion beam; the grid device includes a plurality of grids stacked sequentially in the ion beam emission direction;

[0062] A sensor, fixed to a grid, is used to acquire target detection parameters in real time; these parameters are used to determine the operating status of the ion beam system.

[0063] As described above, the ion beam system includes sensors mounted on a grid to acquire target detection parameters in real time. These parameters determine the operating status of the ion beam system. Therefore, the technical solution of this application can acquire target detection parameters in real time using sensors mounted on the grid to determine the operating status of the ion beam system, enabling the detection of the system's operating status. This allows for adjustment of the ion beam system's operating status based on operational requirements, facilitating surface processing. Furthermore, integrating the sensors onto the grid eliminates the need for separate sensor installation equipment, improving the system's integration level.

[0064] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0065] refer to Figure 1 , Figure 1 This is a schematic diagram of an ion beam system provided in an embodiment of this application. The ion beam system includes:

[0066] Ion source 11, which is used to generate and emit an ion beam;

[0067] A grid device 12 is used at least to adjust the emission velocity of the ion beam; the grid device 12 includes a plurality of grids 121 stacked sequentially in the ion beam emission direction;

[0068] Sensor 13 is fixed on the grid 121 and is used to acquire target detection parameters in real time; the target detection parameters are used to determine the working status of the ion beam system.

[0069] The ion beam system can be either an IBE device or an IBD device. This application does not limit the type of ion beam system.

[0070] The ion beam system may be equipped with one or more sensors 13. For the grid 121 equipped with sensors 13, one or more sensors 13 may be arranged on the grid. In this embodiment, the number of sensors 13 is not limited.

[0071] In this embodiment of the application, the ion beam system includes a sensor 13 disposed on the grid 121. The sensor 13 is used to acquire target detection parameters, and the working status of the ion beam system can be determined by the target detection parameters.

[0072] As can be seen, the technical solution of this application can acquire target detection parameters in real time through the sensor 13 set on the grid 121. The target detection parameters are used to determine the working status of the ion beam system, so as to realize the detection of the working status of the ion beam system. The working status of the ion beam system can be adjusted according to the operation requirements, which facilitates the processing operation on the object surface. Moreover, by integrating the sensor 13 on the grid 121, there is no need for a separate sensor installation device, which improves the integration of the system.

[0073] The target detection parameters are used to determine the operating state of the ion beam system, including: the target detection parameters are used to determine at least one of the operating state of the grid device and the operating state of the ion source. If the target parameters include a first parameter related to the operating state of the grid device, the target detection parameters can determine the operating state of the grid device. If the target parameters include a second parameter related to the operating state of the ion source, the target parameters can determine the operating state of the ion source. The type of sensor 13 can be set such that the target detection parameters include at least one of the first and second parameters.

[0074] Optionally, the ion source 11 includes:

[0075] Ionization chamber 115;

[0076] Gas passage 114, which is connected to ionization chamber 115, is used to provide process gas to ionization chamber 115;

[0077] A coil 111 surrounds the outside of the ionization chamber 115 and is connected to the radio frequency power supply 113 via a matching adapter 112.

[0078] The RF power supply 113 transmits RF energy to the coil 111 wound around the outside of the ionization chamber 115 through the matching unit 112. Through the inductive effect, when the RF energy is turned on, the coil 111 will form an alternating electromagnetic field in the ionization chamber 115. The process gas will be ionized under the action of the electromagnetic field.

[0079] The ionization process of the gas in the ionization chamber 115 involves electrons being released from gas molecules to form free electrons and positive ions. These free electrons and positive ions are further accelerated and collided under the influence of an electromagnetic field, generating more electrons and ions, forming an "avalanche" discharge, and ultimately forming plasma within the ionization chamber 115. During the operation of the ion beam system, the radio frequency power supply 113 continuously provides energy to the coil 111, maintaining the existence of the plasma through electromagnetic induction. Electrons and ions in the plasma continuously collide and redistribute under the influence of the electromagnetic field, maintaining the plasma's equilibrium state.

[0080] A grid device 12 is installed at the front end of the ionization chamber 115. The grid device 12 includes a plurality of grids 121 stacked sequentially in the ion beam emission direction. In this embodiment, the grid device 12 is illustrated with an example having two grids 121.

[0081] The grid device 12 includes at least two grids 121, each comprising an adjacent screen grid 121a and an acceleration grid 121b. The screen grid 121a is connected to a positive DC voltage (DC+), and the acceleration grid 121b is connected to a negative DC voltage (DC-), thereby creating an electric field gradient between the screen grid 121a and the acceleration grid 121b. This gradient tractions and accelerates the plasma within the ionization chamber 115, ultimately forming a directional ion beam outside the ion source 11.

[0082] Optionally, the grid device 12 may also include a deceleration grid disposed on the side of the acceleration grid 121b away from the screen grid 121a. The deceleration grid is not shown in the accompanying drawings of the embodiments of this application. The deceleration grid is grounded.

[0083] Optionally, a neutralizer may be provided on the side of the grid device 12 facing away from the ion source 11. The neutralizer is not shown in the accompanying drawings of this embodiment. The neutralizer is used to emit electrons into the ion beam to neutralize the ion beam and prevent ion beam divergence and charge accumulation during operation.

[0084] During the operation of the ion beam system, prolonged ion beam bombardment can cause the temperature of the grid 121 to rise, and even lead to high-temperature deformation of the grid, thereby affecting the performance of the grid 121. To address this issue, the target detection parameters include deformation parameters and / or temperature parameters. The sensor 13 includes a deformation sensor capable of detecting the deformation parameters of the grid 121 and / or a temperature sensor capable of detecting the temperature parameters of the grid 121. The deformation parameters can determine the deformation state of the grid 121. Based on the deformation state of the grid 121, the degree of deformation of the grid 121 can be detected to assess the health status related to the deformation state of the grid 121. The temperature parameters can determine the temperature distribution of the grid 121. Based on the temperature parameters of the grid 121, the temperature distribution of the grid 121 can be detected to assess the health status related to the temperature distribution of the grid 121.

[0085] If sensor 13 includes a temperature sensor, multiple temperature sensors can detect temperature parameters at different locations on the same grid 121 to determine the temperature distribution on the plane containing the grid 121. Based on this temperature distribution, it can be determined whether the temperature of different regions of the grid 121 meets the target temperature during the operation of the ion beam system. Conventional ion beam systems require warm-up operation before use, necessitating a fixed warm-up time, but cannot detect the actual temperature of the grid 121. The technical solution of this application can detect the temperature distribution of the grid 121 using sensor 13, enabling more accurate detection and improving the repeatability of the ion beam system's processing technology. Furthermore, the temperature parameters of the grid 121 can be combined to determine the temperature distribution on its plane, and the ion beam flux distribution can be determined based on this temperature distribution. Locations with high ion beam flux experience stronger bombardment of the grid 121, leading to a localized temperature increase in these areas. The current health status of the ion beam can be determined based on the ion beam flux distribution.

[0086] Furthermore, during the operation of an ion beam system, under normal operating conditions, the ion beam flux distribution generally exhibits a Gaussian-like distribution. Currently, conventional ion beam systems lack the capability to detect this ion beam distribution. To address this issue, target detection transmission includes ion beam flux parameters. Sensor 13 includes a Faraday sensor capable of detecting these parameters. The Faraday sensor detects the ion beam flux parameters extracted from the grid 121 to determine the current ion beam flux distribution. If the ion beam flux distribution does not meet calibration conditions, such as not conforming to a Gaussian distribution, the ion beam flux distribution can be adjusted using a magnet assembly located in the ionization chamber 115.

[0087] In this embodiment, sensor 13 is not limited to Faraday sensors, temperature sensors, and deformation sensors. Sensor 13 may include at least one of Faraday sensors, temperature sensors, and deformation sensors, and may also be a sensor with other detection functions. This embodiment does not limit the type of sensor 13. Sensor 13 can be powered by wired or wireless power to provide the power required for the device's operation. If wireless power is used, the alternating magnetic field generated by coil 111 can be used as the power source to provide the power required for the device's operation.

[0088] refer to Figure 2 , Figure 2 This is a schematic diagram of another ion beam system provided in an embodiment of this application, based on any of the above embodiments. Figure 2The ion beam system shown also includes a controller 14, which determines the operating state of the ion beam system based on target detection parameters. The sensor 13 is communicatively connected to the controller 14; the controller 14 determines the operating state of the ion beam system based on the target detection parameters. In other words, the controller 14 can determine at least one of the operating states of the grid device 12 and the ion source based on the target detection parameters. In this configuration, the controller 14 can automatically determine the operating state of the ion beam system based on the target detection parameters.

[0089] In other ways, the operating status of the ion beam system can be determined by showing the target detection parameters to the user and then processing the data of the target detection parameters manually or with other equipment.

[0090] refer to Figure 3 , Figure 3 This is a schematic diagram of a grid device provided in an embodiment of this application. In the grid device 12, two adjacent grid layers 121 are connected and fixed by an insulating member 15; wherein, the insulating member 15 includes a sensor 13. Optionally, the insulating member 15 can be a ceramic column.

[0091] in, Figures 1-3 The diagrams illustrate the grid 121 using cross-sectional views perpendicular to its thickness.

[0092] Optionally, two adjacent grids 121 are connected and fixed by multiple insulating parts 15 to ensure the reliability and stability of the connection between the two adjacent grids 121.

[0093] exist Figure 3 In the illustrated method, the sensor 13 is mounted using the insulating part 15 between two adjacent grids 121. There is no need to add a separate mounting component for the sensor 13. The installation of the sensor 13 does not increase the system size and improves the system integration.

[0094] The sensor 13 is mounted on the insulating part 15 and is attached and fixed to the grid 121 to ensure the detection accuracy of the sensor 13.

[0095] refer to Figure 4 , Figure 4 This is a three-dimensional structural diagram of an insulating component in a grid device. The insulating component 15 includes: a first part 151 and a second part 152 connected to each other; the first part 151 is fixed on a grid 121; the second part 152 is fixed on an adjacent grid 121; wherein at least one of the first part 151 and the second part 152 has a sensor 13.

[0096] exist Figure 4In the illustrated configuration, a sensor 13 is respectively provided on the first part 151 and the second part 152. The sensor 13 on the first part 151 is attached and fixed to the grid 121 that is relatively fixed to the first part 151, and the sensor 13 on the second part 152 is attached and fixed to the grid 121 that is relatively fixed to the second part 152. In other configurations, either the first part 151 or the second part 152 may have a sensor 13.

[0097] The first part 151 and the second part 152 are connected and fixed to each other by a locking mechanism 153. The locking mechanism 153 can be any of the following: a pin-type structure, a screw-type mechanism, or a snap-fit ​​mechanism. The implementation of the locking mechanism 153 is not limited in this embodiment.

[0098] Optionally, such as Figure 4 As shown, in the insulating member 15, the first part 151 has a first limiting member 154, and the second part 152 has a second limiting member 155. The two grids 121 connected and fixed by the insulating member 15 are located between the first limiting member 154 and the second limiting member 155. If a sensor 13 is provided on the first part 151, the sensor 13 is located between the first limiting member 154 and the grids 121 that are relatively fixed to the first part 151. If a sensor 13 is provided on the second part 152, the sensor 13 is located between the second limiting member 155 and the grids 121 that are relatively fixed to the second part 152. In this way, the sensor 13 and the grids 121 can be tightly attached and fixed by the fixed limiting members of the insulating member 15 without the need to add a separate mounting part for the sensor 13. This improves the integration, facilitates the installation and fixation of the sensor 13, and ensures the detection accuracy of the sensor 13.

[0099] In one embodiment of this application, the length of the insulating member 15 is fixed.

[0100] In other embodiments, the insulating element 15 may include a locking mechanism 153 capable of adjusting its length; the operating state of the ion beam system includes the length of the insulating element 15. In this manner, the ion beam system can automatically adjust the length of the insulating element 15 based on target detection parameters to ensure that the distance between two adjacent grids 121 is always at the target distance, avoiding deviations in the spacing between grids 121 due to deformation, which in turn affects the accuracy and reliability of the ion beam system's processing technology.

[0101] As described above, in this embodiment of the application, the adjustable length locking mechanism 153 is integrated into the insulating member 15 to achieve telescopic adjustment of the locking mechanism 153. The length of the insulating member 15 can be automatically adjusted by the controller 14 based on the operating status of the ion beam system to prevent deformation of the grid 121 due to high temperature.

[0102] In order to better fix the two grids 121 relative to each other by means of insulating members 15, the two adjacent grids 121 are fixedly connected by multiple insulating members 15.

[0103] refer to Figure 5 , Figure 5 This is a schematic diagram illustrating the distribution of insulating elements between two adjacent grids according to an embodiment of this application. In this distribution, multiple insulating elements 15 between two adjacent grids 121 are located on the same circle. Figure 5 This is a top view of grid 121.

[0104] refer to Figure 6 , Figure 6 This is a schematic diagram illustrating another distribution of insulating elements between two adjacent grids provided in an embodiment of this application. In this distribution, multiple insulating elements 15 between two adjacent grids 121 are located on multiple radii of the same circle. Figure 6 This is a top view of grid 121.

[0105] The distribution of multiple insulating elements 15 between two adjacent grids 121 includes, but is not limited to, the following: Figure 5 and Figure 6 As shown. Alternatively, multiple insulating elements 15 between two adjacent grids 121 can be located on the same polygon, on multiple communication rings, or on multiple concentric polygons. This application embodiment does not limit the distribution of multiple insulating elements 15 between two adjacent grids 121.

[0106] refer to Figure 7 , Figure 7 This is a schematic diagram of another grid device provided in an embodiment of this application. In this method, at least one grid 121 is provided with an ion beam blocking member 16, which is used to adjust the uniformity of the ion beam. The ion beam blocking member 16 includes a sensor 13. While adjusting the ion beam uniformity of the grid 121, the ion beam blocking member 16 can also detect target detection parameters. Figure 7 The grid 121 is illustrated by a cross-sectional view perpendicular to the thickness direction of the grid 121.

[0107] exist Figure 7 In the illustrated configuration, the sensor 13 is mounted using the ion beam blocking element 16 of the grid 121, which improves the system's integration.

[0108] like Figure 7 As shown, the ion beam blocking member 16 can be fixed to the grid 121 by the fixing member 161. Optionally, the fixing member 161 may include fixing screws, which are fixedly connected to the grid 121 based on the grid holes on the grid 121.

[0109] Sensor 13 can be fixed to one side surface of grid 121 by fastener 161. Sensor 13 is fixed in contact with grid 121 to ensure detection accuracy.

[0110] In this embodiment, if the sensor 13 is mounted using the ion beam blocking member 16 of the grid 121, the ion beam blocking member 16 can be disposed in the ion beam blocking member 16 of any one of the grids 121 in the grid device 12. At least one of the screen grid 121a, the acceleration grid 121b, and the deceleration grid in the grid device 12 can be used to mount the sensor 13 via the ion beam blocking member 16.

[0111] refer to Figure 8 , Figure 8 This is a schematic diagram of an ion beam blocking device provided in an embodiment of this application. The ion beam blocking device 16 includes: a first baffle 162 and a sensor 13 stacked together; and a fixing member 161 for fixing the ion beam blocking device 16 to a grid 121. In this configuration, the sensor 13 is a sheet sensor, stacked with the first baffle 162, and fixed to the surface of the grid 121 by the fixing member 161.

[0112] Optionally, the fixing member 161 can be a fixing screw, including bolt 161a and nut 161b. An ion beam blocking member 16 can be fixedly connected to the grid 121 through multiple fixing members 161 to ensure the reliability and stability of the connection between the ion beam blocking member 16 and the grid 121.

[0113] The first baffle 162 is made of a material resistant to ion bombardment, such as a graphite plate. The stacked structure of the first baffle 162 and the sensor 13 is a component that can block the passage of the ion beam. This component has multiple through-holes penetrating the stacked structure, which can prevent the ion beam from bombarding the sensor 13 and causing damage. Optionally, the through-holes in the stacked structure can be configured to correspond one-to-one with the grids on the grid 121. The apertures of the through-holes in the stacked structure and the grids can be different, and the distribution density of the through-holes in the stacked structure and the grids can be different.

[0114] refer to Figure 9 and Figure 10 , Figure 9 This is a schematic diagram of another grid device provided in an embodiment of this application. Figure 10 for Figure 9 The schematic diagram of the ion beam blocking component in the grid device shown is as follows: Figure 7and Figure 8 Based on the method shown. Figure 9 and Figure 10 In the illustrated configuration, the ion beam blocking element 16 further includes a second baffle 163, which is fixed to the sensor 13 on the surface opposite to the first baffle 162. Figure 9 The grid 121 is illustrated by a cross-sectional view perpendicular to the thickness direction of the grid 121.

[0115] exist Figure 9 and Figure 10 In the illustrated configuration, the sensor 13 is positioned between the first baffle 162 and the second baffle 163. These two baffles effectively protect the sensor 13 from damage caused by ion bombardment. In this configuration, it is unnecessary to provide through-holes in the ion beam blocking member 16.

[0116] refer to Figure 11 , Figure 11 This is a schematic diagram illustrating the layout of ion beam blocking elements on a grid according to an embodiment of this application. Multiple ion beam blocking elements 16 can be disposed on the grid 121. Figure 11 This is a top view of grid 121.

[0117] In this embodiment, multiple ion beam blocking elements 16 can be provided on the grid 121. The distribution of the ion beam blocking elements 16 can be set based on the effect of adjusting the ion beam uniformity, and is not limited to... Figure 11 As shown.

[0118] refer to Figure 12 , Figure 12 This is a schematic diagram illustrating a layout of a strip sensor mounted on a grid according to an embodiment of this application. In this layout, the grid 121 includes a body 171 and a plurality of grid holes 172 arranged in a dot matrix penetrating the body 171; at least one strip sensor 13 is fixed on the surface of the body between the grid holes 172. Figure 12 This is a top view of grid 121.

[0119] refer to Figure 13 , Figure 13 This is a schematic diagram illustrating a layout of point sensors on a grid according to an embodiment of this application. In this layout, the grid 121 includes a body 171 and multiple grid holes 172 arranged in a dot matrix penetrating the body 171; at least one point sensor 13 is fixed on the surface of the body between the grid holes 172. Figure 13 This is a top view of grid 121.

[0120] exist Figure 12 and Figure 13In the illustrated configuration, point-shaped or strip-shaped sensors 13 are disposed on the surface of the body between the grid holes 172 to acquire target detection parameters. This allows for the detection of targets at more locations on the plane of the grid 121, thereby improving the accuracy of data acquisition. The strip-shaped sensor 13 can be rectangular, wavy, or annular, among other types.

[0121] In other embodiments of this application, the sensor 13 may be embedded within the body 171.

[0122] Optionally, the target detection parameters can characterize at least one of the following: the degree of deformation of the grid 121, the uniformity of the ion beam flux distribution, and the temperature of the grid 121. As described above, the target detection parameters include at least one of the following: deformation parameters, temperature parameters, and ion beam flux parameters. If the target detection parameters include deformation parameters, the target detection parameters can characterize the degree of deformation of the grid 121; if the target detection parameters include temperature parameters, the target detection parameters can characterize the temperature distribution of the grid 121; if the target detection parameters include ion beam flux parameters, the target detection parameters can characterize the ion beam flux distribution of the grid 121.

[0123] As described above, sensor 13 is communicatively connected to controller 14; controller 14 is used to determine the operating state of ion beam system based on target detection parameters; controller 14 can acquire data map corresponding to the same grid 121 based on target detection parameters, and determine the operating state of ion beam system based on data map; wherein, data map can characterize the distribution of target detection parameters in the plane where grid 121 is located, and the operating state of ion beam system can be determined based on this distribution.

[0124] In another embodiment of this application, a grid device 12 for an ion beam system is also provided. The grid device 12 includes: a plurality of grids 121 stacked sequentially in the ion beam emission direction; and a sensor 13 fixed on the grids 121 for acquiring target detection parameters. The implementation of the grid device 12 can refer to any of the above embodiments, and will not be described again in the embodiments of this application.

[0125] In another embodiment of this application, a control method for the above-described ion beam system is also provided, the control method being as follows: Figure 14 As shown.

[0126] refer to Figure 14 , Figure 14 This application provides a flowchart illustrating an ion beam system control method, which includes:

[0127] Step S11: Obtain target detection parameters through sensor 13 on grid device 12.

[0128] Step S12: Determine the operating status of the ion beam system based on the target detection parameters.

[0129] For the grid 121 on which the sensor 13 is installed, a Cartesian coordinate system can be established based on the plane on which the grid 121 is located, and the coordinate points of the sensor 13 can be calibrated. Based on this, the sensor 13 can detect target detection parameters at multiple different positions on the plane on which the grid 121 is located.

[0130] refer to Figure 15 , Figure 15 The data map of the grid 121 is determined based on the target detection parameters. Using the coordinates of the corresponding points of sensor 13 and the collected target detection parameters, a topological interpolation algorithm can be used to obtain the data map corresponding to the same grid 121. The operating state of the ion beam system is then determined based on this data map. The more sensors 13 installed in the grid 121, the closer the interpolated data map will be to the actual distribution of the target detection parameters. The interpolation algorithm can include any of the following: nearest neighbor interpolation, dynamic Shepard interpolation, spline interpolation, triangular interpolation, and iterative interpolation based on Fourier transform.

[0131] In this embodiment of the application, the target detection parameters collected by multiple sensors 13 can be interpolated and calculated in combination with the coordinate points where the sensors 13 are located to obtain a relevant data map of the plane where the grid 121 is located. The current working state of the ion source and / or the grid 121 can be inferred through this data map. The current working state is compared with the standard state to determine the health status of the ion source and / or the grid 121.

[0132] As mentioned above, sensor 13 can be a deformation sensor. In this case, multiple deformation sensors can detect the degree of deformation of the grid 121 due to high temperature, and interpolation calculations can obtain relevant data maps of the entire plane containing the grid 121. Based on these data maps, if it is determined that the deformation of a certain area of ​​the grid 121 or the deformation of the entire plane exceeds a set threshold, it indicates that the grid 121 is in an unhealthy state, requiring adjustment of its operating status or replacement.

[0133] Alternatively, sensor 13, as described above, can be a Faraday sensor. In this case, multiple Faraday sensors can detect the ion beam flux distribution drawn out by the grid 121, and interpolation calculations can obtain a relevant data map of the entire plane containing the grid 121. Based on this data map, the ion beam flux distribution of the ion beam system can be detected and updated in real time. If the ion beam flux distribution does not meet the required distribution, it can be adjusted using an external magnet assembly.

[0134] Alternatively, sensor 13, as described above, can be a temperature sensor. In this case, multiple temperature sensors can detect temperature parameters at multiple locations on the grid 121, and then interpolation calculations can be used to determine the temperature distribution on the plane containing the grid 121, thereby determining the relevant data map. Based on this data map, it can be determined whether the temperature parameters of the grid 121 meet the target temperature. Furthermore, the ion beam flux distribution can be qualitatively inferred based on the temperature distribution, because locations with high ion beam flux distribution exert a stronger bombardment effect on the grid 121, correspondingly leading to a local temperature increase at those locations.

[0135] In this embodiment, the control method described above can be formulated by the controller 14. The controller 14 can determine the operating state of the ion beam system based on the target detection parameters, and thus determine its health status. The determination of the operating state of the ion beam system can be implemented by one or more machine learning (ML) / artificial intelligence (AI) algorithms. The ML / AI algorithm can evaluate the operating state and health status of the ion beam system based on one or more sensor measurements performed by the sensor 13. The operating state of the ion beam system includes at least one of the following: the degree of grid deformation, the ion beam flux distribution, and the grid temperature distribution. Optionally, the ML / AI algorithm can be used to calculate and control the expansion and contraction of the insulating component 15.

[0136] The various embodiments in this application are described in a progressive, parallel, or combined manner. Each embodiment focuses on its differences from other embodiments, and similar or identical parts between embodiments can be referred to interchangeably. The implementation methods provided in this application can be combined with each other without contradiction.

[0137] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An ion beam system, characterized in that, include: An ion source, wherein the ion source is used to generate and emit an ion beam; A grid device, the grid device being used at least for adjusting the emission velocity of the ion beam; the grid device comprising a plurality of grids sequentially stacked in the ion beam emission direction; The sensor, fixed on the grid, is used to acquire target detection parameters in real time; The target detection parameters are used to determine the operating status of the ion beam system.

2. The ion beam system according to claim 1, characterized in that, The sensor is communicatively connected to the controller; the controller is used to determine at least one of the operating states of the grid device and the ion source based on the target detection parameters.

3. The ion beam system according to claim 1 or 2, characterized in that, The adjacent layers of the grid are connected and fixed by insulating components; The insulating component includes the sensor.

4. The ion beam system according to claim 3, characterized in that, The insulating element includes: a first portion and a second portion connected opposite to each other; the first portion is fixed to one of the grids; the second portion is fixed to an adjacent grid. The sensor is provided in at least one of the first part and the second part.

5. The ion beam system according to claim 3, characterized in that, The insulating component includes a locking mechanism capable of adjusting the length of the insulating component; The operating status of the ion beam system includes the length of the insulating component.

6. The ion beam system according to claim 1 or 2, characterized in that, At least one of the grids is provided with an ion beam blocking element, which is used to adjust the uniformity of the ion beam. The ion beam blocking device includes the sensor.

7. The ion beam system according to claim 6, characterized in that, The ion beam blocking device includes: The first baffle and the sensor are stacked together; A fixing member is used to fix the ion beam blocking member to the grid.

8. The ion beam system according to claim 7, characterized in that, The ion beam blocking device further includes a second baffle, which is fixed to the sensor and the surface of the side opposite to the first baffle.

9. The ion beam system according to claim 1 or 2, characterized in that, The grid includes: a body and a plurality of grid holes arranged in a dot matrix through the body; At least one point-shaped or strip-shaped sensor is fixed on the body surface between the grid holes.

10. The ion beam system according to claim 1 or 2, characterized in that, The target detection parameters can characterize at least one of the following: the degree of deformation of the grid, the flux distribution of the ion beam, and the temperature distribution of the grid.

11. The ion beam system according to claim 1, characterized in that, The sensor is communicatively connected to the controller; the controller is used to determine the operating status of the ion beam system based on the target detection parameters. The controller can acquire a data map corresponding to the same grid based on the target detection parameters, and determine the operating status of the ion beam system based on the data map; The data map can characterize the distribution of the target detection parameters in the plane where the grid is located.

12. A grid device for an ion beam system, characterized in that, include: It includes multiple grids stacked sequentially in the ion beam emission direction; A sensor, fixed to the grid, is used to acquire target detection parameters.

13. A control method for an ion beam system as described in any one of claims 1-11, characterized in that, include: Target detection parameters are acquired in real time by sensors on the grid device; The operating status of the ion beam system is determined based on the target detection parameters.

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