Plasma processing system and exhaust system

Abstract

The present disclosure provides a plasma processing system and an exhaust system provided with a filter device capable of removing particles in a gas without using a liquid. The plasma processing system includes: a plasma generator configured to perform plasma processing and oxidation processing on a process gas to form a powder; and a collection device for removing the powder from the gas containing the powder, the collection device having: a chamber; an inlet pipe configured to fluidly connect the plasma generator and the chamber and having an inlet opening located inside the chamber or on the surface of the chamber; and an outlet pipe for discharging the gas in the chamber to the outside of the chamber and having an outlet opening located inside the chamber or on the surface of the chamber, in which the chamber does not contain the liquid and is in a dry state, and the direction of the inlet opening and the direction of the outlet opening are not disposed facing each other.

Description

Technical Field

[0001] This invention relates to a plasma processing system and an exhaust system. Background Technology

[0002] To render harmless the exhaust gas emitted from semiconductor processing devices, a plasma treatment system is used. As an example of such a plasma treatment system, a semiconductor waste rendering system is known in Patent Document 1.

[0003] like Figure 1 As shown, the semiconductor waste decontamination system 10 of Patent Document 1 includes: a vacuum pump 18 for evacuating a semiconductor chamber, a decontamination device 12, and a filter device 16. The decontamination device 12 is configured to decontaminate exhaust gas from the semiconductor processing chamber 14 and supply the decontaminated exhaust gas to the filter device 16. The filter device 16 is configured to remove particles generated during the decontamination process from the exhaust gas. More specifically, as shown in FIG. 6 of Patent Document 1, the filter device 16 has a filter chamber 118. Furthermore, the filter chamber 118 forms a liquid reservoir 120 for holding a filter liquid, which is used to filter the process gas flowing into the filter device 16. Thus, when exhaust gas supplied from the decontamination device 12 flows through the filter chamber 118, particles contained in the exhaust gas are separated from the gas flow and adsorbed by the filter liquid.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Publication No. 2023-542946

[0007] Patent Document 2: Japanese Patent Application Publication No. 2023-59416.

[0008] The technical problem that the invention aims to solve

[0009] However, the filtration device 16 disclosed in Patent Document 1 is envisioned for use at extremely low pressures caused by vacuum pump 18. Therefore, a low vapor pressure filter liquid must be used in the filtration device 16. This is because if a high vapor pressure filter liquid is used, the filter liquid will vaporize, causing the pressure in the vacuum to rise. However, low vapor pressure filter liquids are expensive, increasing the operating cost of the device.

[0010] Furthermore, to enable longer-term use of the filter liquid, it is possible to simultaneously filter the liquid using a filter and circulate it within the device, thereby conserving the filter liquid. However, this requires both a filter and a liquid circulation system. As a result, equipment costs increase, and the overall footprint of the device may increase due to the need to configure the filter and liquid circulation system. Therefore, there is a need for a filtration device that can remove particles from gases without using liquid. Summary of the Invention

[0011] Therefore, one of the objectives of this disclosure is to provide a plasma processing system and an exhaust system having a filtration device capable of removing particles from a gas without using a liquid.

[0012] Technical means for solving technical problems

[0013] The plasma processing system disclosed herein comprises: a plasma generator in fluid communication with a semiconductor chamber of a semiconductor manufacturing apparatus, configured to pulverize a process gas supplied from the semiconductor chamber by plasma processing and oxidation treatment to form a powder; and a trapping device in fluid communication with the plasma generator for removing the powder from the gas containing the powder, the trapping device comprising: a chamber; an inlet pipe configured to allow the plasma generator to be in fluid communication with the chamber and having an inlet opening located inside or on the surface of the chamber; and an outlet pipe for discharging gas from the chamber to the outside of the chamber and having an outlet opening located inside or on the surface of the chamber, the chamber being dry and free of liquid, and the directions of the inlet opening and the outlet opening not being opposite to each other.

[0014] The exhaust system disclosed herein comprises: the aforementioned plasma processing system; the semiconductor manufacturing apparatus having the semiconductor chamber; a vacuum pump for evacuating the semiconductor chamber via the plasma generator and the trapping device; and a decontamination device for receiving the gas discharged from the vacuum pump and decontaminating the received gas.

[0015] The plasma processing system disclosed herein comprises: a plasma generator in fluid communication with a semiconductor chamber of a semiconductor manufacturing apparatus, configured to pulverize a process gas supplied from the semiconductor chamber by plasma processing and oxidation treatment, forming a powder; and a collection device in fluid communication with the plasma generator for removing the powder from the gas containing the powder, the collection device comprising: a chamber; an inlet pipe configured to allow the plasma generator to be in fluid communication with the chamber and having an inlet opening located inside or on the surface of the chamber; an outlet pipe for discharging gas from the chamber to the outside of the chamber and having an outlet opening located inside or on the surface of the chamber; and a shield located between the inlet opening and the outlet opening, the chamber being dry and free of liquid. Attached Figure Description

[0016] Figure 1 This is a block diagram of an exhaust system according to an embodiment of the present disclosure.

[0017] Figure 2 It means Figure 1 The diagram shows the structure of the plasma generator.

[0018] Figure 3A It means Figure 1 The diagram shows the structure of the trapping device.

[0019] Figure 3B yes Figure 3A A cross-sectional view of the trapping device shown.

[0020] Figure 4A This is a cross-sectional view showing an example of an inlet opening direction and an outlet opening direction configured opposite to each other.

[0021] Figure 4B This is a cross-sectional view showing an example of an inlet opening direction and an outlet opening direction configured opposite to each other.

[0022] Figure 5A It means and Figure 3A The structural diagram of another trapping device, which is different from the trapping device.

[0023] Figure 5B yes Figure 5A A cross-sectional view of the trapping device shown.

[0024] Figure 6A It means and Figure 3A The structural diagram of another trapping device, which is different from the trapping device.

[0025] Figure 6Byes Figure 6A A top view of the trapping device shown.

[0026] Figure 6C yes Figure 6A A cross-sectional view of the trapping device shown.

[0027] Figure 7 It means and Figure 3A A cross-sectional view of the structure of another trapping device, which is different from the trapping device.

[0028] Figure 8 This is a perspective view of a plasma processing system according to another embodiment of this disclosure.

[0029] Figure 9 This is a block diagram of a plasma processing system according to another embodiment of this disclosure.

[0030] Figure 10 This is a block diagram of an exhaust system according to another embodiment of the present disclosure.

[0031] Figure 11 This is a block diagram of an exhaust system according to another embodiment of the present disclosure.

[0032] Symbol Explanation

[0033] 100, 102: Exhaust system

[0034] 110: Semiconductor manufacturing equipment

[0035] 112: Semiconductor Chamber

[0036] 120: Vacuum pump

[0037] 130: Decontamination device

[0038] 200, 202, 204, 206: Plasma processing system

[0039] 210: Switching device

[0040] 220: Control device

[0041] 222: Pressure gauge

[0042] 300: Plasma Generator

[0043] 302: Ceramic tube

[0044] 304: Coil

[0045] 306: Power Supply

[0046] 308: Ammeter

[0047] 310: Control device

[0048] 312: Plasma

[0049] 400, 402: Gas supply device

[0050] 410: First flow control device

[0051] 420: Second flow control device

[0052] 430: Third flow control device

[0053] 500: Capture device

[0054] 510: Chamber

[0055] 520: Inlet piping

[0056] 522: Entrance opening

[0057] 530: Outlet Piping

[0058] 532: Bending section

[0059] 534: Exit opening

[0060] 550: Capture device

[0061] 560: Chamber

[0062] 570: Inlet piping

[0063] 572: Entrance opening

[0064] 580: Outlet Piping

[0065] 582: Exit opening

[0066] 600: Capture device

[0067] 610: Chamber

[0068] 620: Inlet piping

[0069] 622: Entrance opening

[0070] 630: Export Piping

[0071] 632: Exit opening

[0072] 632: Bending section

[0073] 634: Exit Opening

[0074] 642, 643: Ports for powder recovery

[0075] 650: Capture device

[0076] 652: Chamber

[0077] 654: Powder Collector

[0078] 700: Capture device

[0079] 704: Powder Collector

[0080] 710: Chamber

[0081] 712: Gas Flow Path Chamber

[0082] 714: The Capture Room

[0083] 720: Inlet piping

[0084] 730: Outlet Piping

[0085] 740: Gate

[0086] 750: Capture device

[0087] 754: Powder Collector

[0088] 760: Chamber

[0089] 762: Gas Flow Path Chamber

[0090] 764: The Capture Room

[0091] 770: Inlet piping

[0092] 780: Outlet Piping

[0093] 790: Gate. Detailed Implementation

[0094] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or corresponding constituent elements are labeled with the same symbols, and repeated descriptions are omitted.

[0095] Exhaust System 100

[0096] Figure 1 This is a block diagram of the exhaust system 100 according to an embodiment of this disclosure. (Refer to...) Figure 1 As an example, the exhaust system 100 includes: a plasma processing system 200, a semiconductor manufacturing apparatus 110, a vacuum pump 120, and a decontamination device 130. First, the constituent elements of the exhaust system 100 will be explained.

[0097] Semiconductor Manufacturing Equipment 110

[0098] As an example, the semiconductor manufacturing apparatus 110 includes a semiconductor chamber 112 and a valve 114. As an example, the semiconductor manufacturing apparatus 110 is an apparatus for supplying process gases to a substrate disposed within the semiconductor chamber 112 and performing a film deposition process on the substrate. The semiconductor chamber 112 is connected to a plasma generator 300 of a plasma processing system 200. Therefore, the process gases used in the film deposition process are discharged to the plasma generator 300. Additionally, the valve 114 has the function of adjusting the flow rate of the process gases discharged from the semiconductor chamber 112. Furthermore, in this specification, a semiconductor manufacturing apparatus refers to an apparatus that performs a certain process on a substrate during semiconductor manufacturing. For example, a semiconductor manufacturing apparatus may include a chemical vapor deposition (CVD) apparatus or an atomic layer deposition (ALD) apparatus. Additionally, as an example, a semiconductor manufacturing apparatus may also be an apparatus for manufacturing flat panel displays (FPDs) or solar cells.

[0099] Vacuum Pump 120

[0100] Vacuum pump 120 is in fluid communication with semiconductor chamber 112 via plasma generator 300 and collection device 500 of plasma processing system 200. Vacuum pump 120 is used to draw in process gas from inside semiconductor chamber 112, creating a vacuum inside semiconductor chamber 112. As an example, vacuum pump 120 is configured to maintain a pressure of 10 Pa to 1333 Pa at the suction port during gas intake. In addition, vacuum pump 120 is connected to decontamination device 130. Thus, the gas drawn in from semiconductor chamber 112 by vacuum pump 120 flows to decontamination device 130.

[0101] Harmless Disposal Device 130

[0102] The harmless treatment device 130 has the function of harmlessly treating process gases using known methods. Process gases used in semiconductor manufacturing may contain harmful flammable gases such as silane (SiH4), dichlorosilane (SiH2Cl2), and ammonia (NH3). Furthermore, when using substances that are liquid at room temperature, such as tetraethoxysilane (Si(OC2H5)4), vaporized or vaporized via a mist spray, the process gases may contain halogen-based, difficult-to-decompose gases such as HF, F2, Cl2, NF3, ClF3, SF6, CHF3, C2F6, and CF4, and / or gases such as H2, O2, O3, and rare gases. Therefore, the process gases discharged from the vacuum pump 120 cannot be directly released into the atmosphere and need to be harmlessly treated by the harmless treatment device 130. The harmlessly treated process gases are then released into the atmosphere through an exhaust system including an exhaust pipe.

[0103] Plasma Processing Systems 200

[0104] According to the specifications of the semiconductor manufacturing apparatus 110, the process gas may contain metallic components such as Zr, Hf, Ti, La, Mo, Ru, and Co. These metallic components react with an oxide source to form metal oxide powder. If this powder becomes trapped in the gaps between the rotors of the vacuum pump 120, or in the gaps between the rotors and the housing containing the rotors, it may obstruct the normal rotation of the vacuum pump 120. Therefore, to protect the vacuum pump 120, the exhaust system 100 includes a plasma processing system 200 between the semiconductor chamber 112 and the vacuum pump 120, which removes metallic components from the process gas. The detailed structure of the plasma processing system 200 is described below.

[0105] As an example, such as Figure 1 As shown, the plasma processing system 200 includes: a plasma generator 300, a collection device 500, a gas supply device 400, and a control device 220.

[0106] <Gas Supply Device 400>

[0107] The gas supply device 400 is connected to a rare gas supply source 932, a nitrogen supply source 934, and an oxidizing gas supply source 936. The nitrogen supply source 934 is configured to supply nitrogen to the gas supply device 400. The rare gas supply source 932 is configured to supply rare gases to the gas supply device 400. The oxidizing gas supply source 936 is configured to supply oxidizing gases to the gas supply device 400. Furthermore, the oxidizing gas can be any substance that can provide oxygen in the oxidation reaction, such as O2, O3, N2O, H2O2, ClOx, NOx, H2O, H2 + O2, halogen gas + O2, or any combination thereof. Thus, the rare gas, nitrogen, and oxidizing gas are supplied to the gas supply device 400. Additionally, the gas supply device 400 is connected to the plasma generator 300. The gas supply device 400 is configured to supply the rare gas, nitrogen, and oxidizing gas to the plasma generator 300 at appropriate flow rates. More specifically, the gas supply device 400 includes: a first flow control device 410 for adjusting the flow rate of rare gases, a second flow control device 420 for adjusting the flow rate of nitrogen, and a third flow control device 430 for adjusting the flow rate of oxidizing gases. As an example, the first flow control device 410, the second flow control device 420, and the third flow control device 430 are mass flow controllers.

[0108] <Plasma Generator 300>

[0109] Next, refer to Figure 2 . Figure 2 It means Figure 1 The diagram shows the structure of the plasma generator 300. (Refer to...) Figure 2The plasma generator 300 includes a ceramic tube 302, a coil 304 wound around the outer periphery of the ceramic tube 302, and a power supply 306. When rare gases, nitrogen, and oxidizing gases are supplied to the plasma generator 300, the power supply 306 applies a current of a predetermined frequency to the coil 304, thereby generating strong electromagnetic waves inside the ceramic tube 302 and generating plasma 312. For example, the coil 304 is made of copper (Cu). For example, the ceramic tube 302 is made of any one of aluminum nitride (AlN), aluminum oxide (Al2O3), zirconium oxide (ZrO2), hafnium oxide (HfO2), yttrium oxide (Y2O3), and quartz (SiO2). Alternatively, in another embodiment of this disclosure, the ceramic tube 302 may also be made of a material used for thermally spraying the aforementioned ceramic onto the surface of high-temperature corrosion-resistant austenitic metals such as stainless steel, Hastelloy, or Inconel. Alternatively, in another embodiment of this disclosure, the plasma generator 300 may also generate plasma 312 by other known methods.

[0110] like Figure 1 As shown, the plasma generator 300 is in fluid communication with the semiconductor chamber 112. Therefore, process gas is supplied from the semiconductor chamber 112 to the plasma generator 300. The process gas may contain metallic components. The plasma generator 300 processes the process gas through plasma treatment and oxidation, forming the metallic components contained in the process gas into powdered metal oxides (Me). x O y ) R (Me represents metal, Me) x O y Used as a general term for metal oxides. R indicates the state in which electrons, etc., are added to the metal oxide due to plasma treatment. That is, the plasma generator 300 has the function of oxidizing and pulverizing metal components.

[0111] Furthermore, the plasma generator 300 has the function of neutralizing process gases. For example, in the semiconductor manufacturing apparatus 110, when tris(dimethylamino)cyclopentadienylzirconium (Zr[(C5H5)(N(CH3)2)]3) (hereinafter referred to as ZAC) is used as a precursor, (CH3)2NH is generated as a byproduct during the manufacturing of semiconductors in the semiconductor chamber 112. Moreover, (CH3)2NH is known to be explosive. When the plasma generator 300 performs plasma treatment and oxidation treatment on (CH3)2NH, the following chemical reaction occurs. As a result, (CH3)2NH is completely oxidized, loses its explosiveness, and is neutralized.

[0112] 2(CH3)2NH+22O2→4CO2+14H2O+N2

[0113] Therefore, the plasma generator 300 has the function of rendering harmful process gases, such as explosive, flammable, and toxic gases, harmless through oxidation reactions.

[0114] Furthermore, according to the specifications of the semiconductor manufacturing apparatus 110, the flow rate of the process gas supplied to the plasma generator 300 may be unstable. Therefore, the flow rate of the process gas supplied to the plasma generator 300 may vary. Moreover, if the flow rate of the process gas varies, the internal pressure of the plasma generator 300 will vary, which may cause the plasma generator 300 to fail to generate stable plasma 312.

[0115] In this regard, the plasma processing system 200 is equipped with a pressure gauge 222 for measuring the internal pressure of the plasma generator 300 (see reference). Figure 1 Furthermore, as described above, the gas supply device 400 includes a first flow control device 410 for regulating the flow rate of rare gas, a second flow control device 420 for regulating the flow rate of nitrogen, and a third flow control device 430 for regulating the flow rate of oxidizing gas. The control device 220 is configured to control the first flow control device 410, the second flow control device 420, and the third flow control device 430 based on the pressure measured by the pressure gauge 222. Therefore, even if the flow rate of the process gas supplied to the plasma generator 300 varies, the control device 220 can change the flow rates of the rare gas, the oxidizing gas, and the nitrogen according to the pressure changes, thereby enabling the plasma generator 300 to generate stable plasma.

[0116] Additionally, refer to Figure 2 The plasma generator 300 also includes a galvanometer 308 for measuring the current flowing through the coil 304, and a control device 310. The control device 310 is configured to perform at least one of a first process and a second process when the maximum value of the current measured by the galvanometer 308 is greater than a predetermined value when the power supply 306 applies current to the coil 304. In the first process, the control device 310 increases the current applied by the power supply 306 to the coil 304. In the second process, the control device 310 increases the frequency of the current applied to the coil 304.

[0117] When plasma generator 300 generates plasma 312, the current flowing through coil 304 is reduced compared to the case where plasma 312 is not generated, due to the power consumed in generating plasma 312. Therefore, when the maximum value of the current measured by ammeter 308 is greater than a specified value, it can be presumed that plasma 312 has not been generated.

[0118] On the other hand, it is known that plasma 312 is more easily generated when the current applied to coil 304 increases and the frequency of the current applied to coil 304 increases. Therefore, when it is assumed that plasma 312 has not been generated, the control device 310 attempts to reignite plasma 312 under conditions that make it easier to generate plasma 312. In other words, the plasma generator 300 has a function to reignite plasma 312.

[0119] <Collection Device 500>

[0120] Figure 3A It means Figure 1 The diagram shows the structure of the trapping device 500. Figure 3B This is a cross-sectional view of the collection device 500. The collection device 500 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied by the plasma generator 300 (see reference). Figure 1 More specifically, as an example, the trapping device 500 includes: a chamber 510, an inlet pipe 520, and an outlet pipe 530. As an example, the chamber 510 has a cuboid shape, having a top surface 512, a bottom surface 513, and four side surfaces 514, 515, 516, and 517 connecting the top surface 512 and the bottom surface 513. The top surface 512, bottom surface 513, and side surfaces 514, 515, 516, and 517 are rectangular thin plates. Furthermore, the top surface 512, bottom surface 513, and side surfaces 514, 515, 516, and 517 are the surfaces of the chamber 510. The chamber 510 does not contain liquid and is in a dry state. Alternatively, the chamber 510 may also have a spherical, cylindrical, or other similar shape.

[0121] The inlet pipe 520 is configured to provide fluid communication between the plasma generator 300 and the chamber 510. Furthermore, the inlet pipe 520 has an inlet opening 522 located on the top surface 512. In other words, the inlet opening 522 faces the bottom surface 513. Additionally, in this disclosure, "the direction of the pipe opening" refers to the direction of flow from inside the pipe through the opening to the outside of the pipe.

[0122] On the other hand, the outlet pipe 530 is configured to discharge the gas inside the chamber 510 to the vacuum pump 120, which is the outside of the chamber 510. More specifically, the outlet pipe 530 penetrates the bottom surface 513, bends in an L-shape at a bend 532 located inside the chamber 510, and extends from the bend 532 toward the side 514. The outlet pipe 530 has an outlet opening 534 located inside the chamber 510. Furthermore, the outlet opening 534 does not face upward, but rather toward the side 514. That is, in the trapping device 500, the directions of the inlet opening 522 and the outlet opening 534 are not opposite to each other. Moreover, the main body of the outlet pipe 530 is located between the inlet opening 522 and the outlet opening 534, and the main body of the outlet pipe 530 serves as a shield 502. In other words, there must be an obstruction 502 on the straight line connecting the inlet opening 522 and the outlet opening 534, so it is impossible to draw a straight line that connects the inlet opening 522 and the outlet opening 534 without passing through the obstruction 502.

[0123] Furthermore, in this disclosure, "the manner in which the directions of the inlet opening and the outlet opening are configured relative to each other" includes not only, but also, Figure 4A The arrangement shown, where the outlet opening 952 is located in front of the inlet opening 950, also includes, for example... Figure 4B The inlet opening 950 and outlet opening 952 are shown to be offset from each other in the parallel direction. That is, the arrangement in which the directions of the inlet opening and the outlet opening are not opposite each other includes at least the following: Figure 4A and Figure 4B As shown in the diagram.

[0124] Thus, in the trapping device 500, the directions of the inlet opening 522 and the outlet opening 534 are not opposite to each other. Therefore, the gas flowing in from the inlet opening 522 cannot flow straight to the outlet opening 534. That is, the gas flowing in from the inlet opening 522 meanders within the chamber 510 while flowing towards the outlet opening 534. As a result, the pressure loss of the gas flowing within the chamber 510 increases. Furthermore, the chamber 510 is larger than the inlet pipe 520. Therefore, inside the chamber 510, the gas can flow in a larger space than in the inlet pipe 520. In other words, inside the chamber 510, the gas can flow in a flow path with a larger cross-sectional area than in the inlet pipe 520. As a result, the gas velocity slows down inside the chamber 510. And, when the gas velocity slows down, particles contained in the gas are less likely to be agitated by the airflow, thus depositing on the bottom surface 513 of the chamber 510 and being removed. That is, the collection device 500 is able to remove particles contained in the gas.

[0125] Furthermore, the interior of the preferred chamber 510 contains a region where the upward velocity component of the gas is less than the settling velocity of the particles. This is because, in such a region, once the particles fall, they will not be propelled upwards by the gas. For example, the trapping device 500 can be configured such that 50%, 60%, 70%, 80%, or 90% or more of the total volume within the chamber 510 constitutes this region.

[0126] Furthermore, the trapping device 500 is not limited to the above structure as long as the direction of the inlet opening 522 and the direction of the outlet opening 534 are not opposite to each other. In another embodiment of this disclosure, for example, the inlet opening 522 may be located inside the chamber 510, and the outlet opening 534 may be located on the surface of the chamber 510.

[0127] Additionally, as an example, the collection device 500 includes a powder recovery port 542 and a maintenance port 544. As an example, the powder recovery port 542 is located on the side 515. The powder recovery port 542 is used to recover powder deposited inside the chamber 510. As an example, the maintenance port 544 is located on the side 515. The maintenance port 544 is used to mount an analyzer.

[0128] <Collection Device 550>

[0129] Figure 5A This is a structural diagram showing the structure of another trapping device 550, which is different from the trapping device 500. Figure 5B This is a cross-sectional view of the trapping device 550. The trapping device 550 is interchangeable with the trapping device 500 in the exhaust system 100, and is configured to be used in the exhaust system 100.

[0130] The collection device 550 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied by the plasma generator 300 (see reference). Figure 1More specifically, as an example, the trapping device 550 has a chamber 560, an inlet pipe 570, and an outlet pipe 580. The chamber 560 has an L-shaped cross-section and includes a first top surface 562, a second top surface 563, a bottom surface 564, and five side surfaces 565, 566, 567, 567, 568, and 569. Furthermore, the first top surface 562, the second top surface 563, the bottom surface 564, and the five side surfaces 565, 566, 567, 567, 568, and 569 are the surfaces of the chamber 560. The first top surface 562, the second top surface 563, and the bottom surface 564 are rectangular thin plates. The second top surface 563 is located above the first top surface 562. The side surfaces 565, 566, and 569 are rectangular thin plates. Side surface 565 connects the first top surface 562 and the bottom surface 564. Side 566 connects the second top surface 563 and the bottom surface 564. Side 569 connects the first top surface 562 and the second top surface 563. Sides 567 and 568 are L-shaped thin plates. Sides 567 and 568 connect the first top surface 562, the second top surface 563, and the bottom surface 564. Furthermore, chamber 560 does not contain liquid and is in a dry state.

[0131] Inlet piping 570 is configured to provide fluid communication between plasma generator 300 and chamber 560 (see reference). Figure 1 Furthermore, the inlet pipe 570 has an inlet opening 572 located on the first top surface 562. In other words, the inlet opening 572 faces the bottom surface 564.

[0132] On the other hand, the outlet pipe 580 is configured as a vacuum pump 120 to discharge gas from the chamber 560 to the outside of the chamber 560. More specifically, the portion of the outlet pipe 580 located directly below the second top surface 563 extends through the bottom surface 564 and extends towards the second top surface 563 inside the chamber 510. The outlet pipe 580 has an outlet opening 582 located inside the chamber 560. The outlet opening 582 is formed in a cut-out portion of the outer peripheral surface of the outlet pipe 580. Furthermore, the outlet opening 582 does not face upwards, but faces towards the side 566. That is, in the trapping device 550, the direction of the inlet opening 572 and the direction of the outlet opening 582 are not opposite to each other. Furthermore, the body of the outlet pipe 580 and the wall of the chamber 560 are located between the inlet opening 572 and the outlet opening 584, and the body of the outlet pipe 580 and the wall of the chamber 560 serve as shields 552 and 554. In other words, there must be obstructions 552 and 554 on the straight line connecting the inlet opening 572 and the outlet opening 582, so it is impossible to draw a straight line connecting the inlet opening 572 and the outlet opening 582 without passing through the obstructions 552 and 554.

[0133] Thus, in the collection device 550, the directions of the inlet opening 572 and the outlet opening 582 are not aligned with each other. Therefore, the collection device 550 can remove particles contained in the gas using the same principle as the collection device 500 described above.

[0134] Additionally, the collection device 550, as an example, includes a powder recovery port 592 and a maintenance port 594. As an example, the powder recovery port 592 is located on the side 566. The powder recovery port 592 is used to recover powder deposited inside the chamber 560. As an example, the maintenance port 594 is located on the side 566. The chamber 560 is used to mount an analyzer.

[0135] <Collection Device 600>

[0136] Figure 6A This is a structural diagram showing the structure of another trapping device 600, which is different from trapping device 500 and trapping device 550. Figure 6B This is a top view of the trapping device 600. Figure 6C This is a cross-sectional view of the trapping device 600. The trapping device 600 is interchangeable with the trapping device 500 in the exhaust system 100, and is configured to be used in the exhaust system 100.

[0137] The collection device 600 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied by the plasma generator 300 (see reference). Figure 1 More specifically, as an example, the trapping device 600 has a chamber 610, an inlet pipe 620, and an outlet pipe 630. The chamber 610 has a cuboid shape, with a top surface 612, a bottom surface 613, and four side surfaces 614, 615, 616, and 617 connecting the top surface 612 and the bottom surface 613. The top surface 612, bottom surface 613, and side surfaces 614, 615, 616, and 617 are rectangular thin plates. Furthermore, the top surface 612, bottom surface 613, and side surfaces 614, 615, 616, and 617 are the surfaces of the chamber 610. The chamber 610 does not contain any liquid and is in a dry state.

[0138] Inlet piping 620 is configured to provide fluid communication between plasma generator 300 and chamber 610 (see reference). Figure 1 Furthermore, the inlet pipe 620 has an inlet opening 622 located on the top surface 612. In other words, the inlet opening 622 faces the bottom surface 613.

[0139] On the other hand, the outlet pipe 630 is configured as a vacuum pump 120 to discharge gas from the chamber 610 to the outside of the chamber 610. More specifically, the outlet pipe 630 extends through the side 614, bends in an L-shape at a bend 632 located inside the chamber 610, and extends from the bend 632 toward the bottom surface 613. The outlet pipe 630 has an outlet opening 634 located inside the chamber 610. Furthermore, the outlet opening 634 does not face upwards, but rather toward the bottom surface 613. That is, in the trapping device 600, the directions of the inlet opening 622 and the outlet opening 634 are not opposite to each other. Moreover, the main body of the outlet pipe 630 is located between the inlet opening 622 and the outlet opening 634, and the main body of the outlet pipe 630 serves as a shield 602. In other words, there must be an obstruction 602 on the straight line connecting the inlet opening 622 and the outlet opening 634, so it is impossible to draw a straight line that connects the inlet opening 622 and the outlet opening 634 without passing through the obstruction 602.

[0140] Thus, in the collecting device 600, the directions of the inlet opening 622 and the outlet opening 634 are not opposite to each other. Therefore, the collecting device 600 can remove particles contained in the gas using the same principle as the collecting device 500 described above.

[0141] As an example, the collection device 600 has two powder recovery ports 642 and 643. As an example, powder recovery port 642 is located on side 617. As an example, powder recovery port 643 is located on side 616. Powder recovery ports 642 and 643 are used to recover powder deposited inside the chamber 610. Thus, the collection device 600 may also have more than two powder recovery ports 642 and 643.

[0142] <Collection Device 800>

[0143] Figure 7 This is a cross-sectional view showing the structure of another trapping device 800, which is different from trapping device 500, trapping device 550, and trapping device 600. The trapping device 800 is interchangeable with the trapping device 500 in the exhaust system 100 and is configured to be used in the exhaust system 100.

[0144] The collection device 800 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied by the plasma generator 300 (see reference). Figure 1More specifically, as an example, the trapping device 800 has a chamber 810, an inlet pipe 820, and an outlet pipe 830. The chamber 810 has a cuboid shape, with a top surface 812, a bottom surface 813, and four side surfaces connecting the top surface 812 and the bottom surface 813. The top surface 812, the bottom surface 813, and the four side surfaces are rectangular thin plates. Furthermore, the top surface 812, the bottom surface 813, and the four side surfaces are the surfaces of the chamber 810. The chamber 810 does not contain any liquid and is in a dry state.

[0145] Inlet piping 820 is configured to provide fluid communication between plasma generator 300 and chamber 810 (see reference). Figure 1 Furthermore, the inlet pipe 820 has an inlet opening 822 located on the top surface 812. In other words, the inlet opening 822 faces the bottom surface 813.

[0146] On the other hand, the outlet pipe 830 is configured as a vacuum pump 120 to discharge the gas inside the chamber 810 to the outside of the chamber 810. Furthermore, the outlet pipe 830 has an outlet opening 832 located on the bottom surface 813. In other words, the outlet opening 832 faces the top surface 812. As an example, both the inlet opening 822 and the outlet opening 832 are circular. And, as an example, the centerline of the inlet opening 822 coincides with the centerline of the outlet opening 832. That is, in the trapping device 800, the directions of the inlet opening 822 and the outlet opening 832 are arranged opposite to each other.

[0147] Furthermore, the trapping device 800 includes a shield 802 located between the inlet opening 822 and the outlet opening 832. In other words, the shield 802 must exist on the straight line connecting the inlet opening 822 and the outlet opening 832, and it is impossible to draw a straight line connecting the inlet opening 822 and the outlet opening 832 without passing through the shield 802. As an example, the shield 802 is formed of a thin plate.

[0148] Thus, a shield 802 is provided in the collection device 800 between the inlet opening 822 and the outlet opening 832. Therefore, the gas flowing in from the inlet opening 822 cannot flow straight to the outlet opening 832. That is, the gas flowing in from the inlet opening 822 meanders within the chamber 810 while flowing towards the outlet opening 832. As a result, the pressure loss of the gas flowing within the chamber 810 increases. Furthermore, the chamber 810 is larger than the inlet pipe 820. Therefore, the gas can flow in a larger space inside the chamber 810 than in the inlet pipe 820. In other words, the gas can flow in a flow path with a larger cross-sectional area inside the chamber 810 than in the inlet pipe 820. As a result, the gas velocity slows down inside the chamber 810. And, when the gas velocity slows down, particles contained in the gas are less likely to be agitated by the airflow, and thus are deposited on the bottom surface 813 of the chamber 810 and removed. That is, the collection device 800 is able to remove particles contained in the gas.

[0149] Therefore, in the exhaust system 100, if the vacuum pump 120 malfunctions and stops, the vacuum pressure of the plasma generator 300 cannot be guaranteed (see reference). Figure 1 In this case, the plasma generator 300 can maintain plasma generation by increasing the power applied to the coil 304 by the power supply 306. However, when the power is increased, the various components of the plasma generator 300 will be subjected to high loads, which is undesirable. In addition, if the decontamination device 130 malfunctions and stops, the undecontaminated gas will be released into the atmosphere, which is also undesirable.

[0150] To address this, in the exhaust system 100, the control device 220, upon detecting that any one of the plasma generator 300, vacuum pump 120, and decontamination device 130 has stopped, shuts down the remaining devices in these three components and outputs a signal to the semiconductor manufacturing apparatus 110 to stop the semiconductor manufacturing process. This prevents the release of harmful gases when any one of the plasma generator 300, vacuum pump 120, or decontamination device 130 stops.

[0151] In addition, the exhaust system 100 includes a valve 108. The valve 108 has the function of regulating the flow rate of the gas supplied from the collection device 500 to the vacuum pump 120.

[0152] Furthermore, when the plasma processing system 200 malfunctions, or when maintenance is needed to remove powder trapped inside the collection device 500, the operator may wish to disconnect the plasma processing system 200 from the semiconductor manufacturing apparatus 110 and the vacuum pump 120. When the operator disconnects the plasma processing system 200 from the semiconductor manufacturing apparatus 110, the semiconductor chamber 112 is exposed to atmospheric pressure, requiring more steps to restart the semiconductor manufacturing apparatus 110. Therefore, the restart time becomes longer. To address this, in the exhaust system 100, the operator can disconnect the plasma processing system 200 from the semiconductor manufacturing apparatus 110 with valve 114 closed. This prevents the semiconductor chamber 112 from being exposed to atmospheric pressure, shortening the restart time. Additionally, when disconnecting the plasma processing system 200 from the semiconductor manufacturing apparatus 110, the operator can simultaneously close valves 108 and 114. This is to prevent the disadvantages caused by the vacuum pump 120 being exposed to atmospheric pressure, as described later.

[0153] Furthermore, when the operator separates the plasma processing system 200 from the vacuum pump 120, the internal pressure of the vacuum pump 120 rises due to exposure to atmospheric pressure, requiring a longer time to re-establish a vacuum. To address this, in the exhaust system 100, the operator can separate the plasma processing system 200 from the vacuum pump 180 with valve 108 closed. This prevents the vacuum pump 120 from being exposed to atmospheric pressure, shortening the time required for it to re-establish a vacuum. Additionally, the operator can simultaneously close valves 108 and 114 when separating the plasma processing system 200 from the vacuum pump 120. This is to prevent the aforementioned disadvantages caused by the semiconductor chamber 112 being exposed to atmospheric pressure.

[0154] Plasma Processing System 202

[0155] Figure 8 This is a perspective view of a plasma processing system 202 according to another embodiment of this disclosure. The plasma processing system 202 is interchangeable with the plasma processing system 200 in the exhaust system 100, and is configured to be used in the exhaust system 100. (See reference...) Figure 8 As an example, the plasma processing system 202 includes a plasma generator 300, a collection device 650, a gas supply device 400, and a control device 220. As an example, the plasma generator 300, gas supply device 400, and control device 220 of the plasma processing system 202 have the same structure as the components of the plasma processing system 200. Therefore, these descriptions are omitted.

[0156] As an example, the collection device 650 includes a chamber 652 and a powder collector 654. The powder collector 654 is disposed within the chamber 652 and configured to be positively charged. More specifically, the powder collector 654 is a conductive plate connected to a power source (not shown). The powder collector 654 becomes positively charged by applying a voltage from the power source.

[0157] As described above, the powder contained in the gas discharged from the plasma generator 300 is a metal oxide (Me). x O y ) R Metal oxides (Me) x O y ) R When exposed to plasma 312, it will collide with ions or electrons and become negatively charged. When this negatively charged metal oxide (Me...) x O y ) R When the powder enters the interior of the collecting device 650, it is attracted to the powder collector 654 by Coulomb force. As a result, the collecting device 650 can collect more powder than if it did not have the powder collector 654.

[0158] Furthermore, in another embodiment of this disclosure, the above-described collection devices 500, 550, 600, and 800 may also include a powder collector 654.

[0159] Plasma Processing System 204

[0160] Figure 9 This is a block diagram of a plasma processing system 204 according to another embodiment of this disclosure. The plasma processing system 204 is interchangeable with the plasma processing system 200 in the exhaust system 100, and is configured to be used in the exhaust system 100. (See also...) Figure 9 As an example, the plasma processing system 204 includes: a plasma generator 300, a trapping device (an example of a first trapping device) 700, a trapping device (an example of a second trapping device) 750, and a switching device 210. As an example, the plasma generator 300 of the plasma processing system 202 has the same structure as the components of the plasma processing system 200. Therefore, the description of the plasma generator 300 is omitted.

[0161] Reference Figure 9The collection device 700 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied by the plasma generator 300. More specifically, as an example, the collection device 700 includes: a chamber 710, an inlet pipe 720, an outlet pipe 730, a gate 740, and a powder collector 704. Furthermore, the chamber 710 does not contain any liquid and is in a dry state. Moreover, the chamber 710 includes a gas flow path chamber 712 and a collection chamber 714.

[0162] The powder collector 704 is located inside the collection chamber 714 and is configured to be positively charged. Therefore, the powder recovered by the collection device 700 is attracted to the powder collector 704 and deposited more inside the collection chamber 714.

[0163] As an example, gate 740 is a gate valve that, when closed, separates the gas flow path chamber 712 from the collection chamber 714. Furthermore, in the collection device 700, when gate 740 is closed, the inlet pipe 720 is configured to be in fluid communication with the outlet pipe 730 via the gas flow path chamber 712, not via the collection chamber 714. Therefore, by closing gate 740, the vacuum pressure in the gas flow path chamber 712 can be maintained, and the collection chamber 714 can be exposed to the atmosphere. That is, as long as gate 740 is closed, the operator can access the collection chamber 714 and recover the powder accumulated within it while the exhaust system 100 is running.

[0164] On the other hand, the collection device 750 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied by the plasma generator 300. More specifically, as an example, the collection device 750 includes: a chamber 760, an inlet pipe 770, an outlet pipe 780, a gate 790, and a powder collector 754. Furthermore, the chamber 760 does not contain liquid and is in a dry state. In addition, the chamber 760 includes a gas flow path chamber 762 and a collection chamber 764.

[0165] The powder collector 754 is located inside the collection chamber 764 and is configured to be positively charged. Therefore, the powder recovered by the collection device 750 is attracted to the powder collector 754 and deposited more inside the collection chamber 764.

[0166] Gate 790, as an example, is a gate valve that, when closed, separates the gas flow path chamber 762 from the collection chamber 764. Furthermore, in the collection device 750, when gate 790 is closed, the inlet pipe 770 is configured to be in fluid communication with the outlet pipe 780 via the gas flow path chamber 762, bypassing the collection chamber 764. Therefore, by closing gate 790, the vacuum pressure in the gas flow path chamber 762 can be maintained, and the collection chamber 764 can be exposed to the atmosphere. That is, as long as gate 790 is closed, the operator can access the collection chamber 764 and recover the powder accumulated within it while the exhaust system 100 is running.

[0167] The switching device 210 includes powder-containing gas supplied from the plasma generator 300. More specifically, the switching device 210 includes valves 212, 214, 216, and 218. Valve 212 is installed in the inlet pipe 720 and functions to regulate the flow rate of gas flowing through the inlet pipe 720. Valve 214 is installed in the outlet pipe 730 and functions to regulate the flow rate of gas flowing through the outlet pipe 730. Valve 216 is installed in the inlet pipe 770 and functions to regulate the flow rate of gas flowing through the inlet pipe 770. Valve 218 is installed in the outlet pipe 780 and functions to regulate the flow rate of gas flowing through the outlet pipe 780.

[0168] In the plasma processing system 204, gas supplied from the plasma generator 300 is supplied to the collection device 700 by opening valves 212 and 216. Conversely, gas supplied from the plasma generator 300 is supplied to the collection device 750 by opening valves 214 and 218. That is, when one of the collection devices 700 and 750 is being maintained, the other collection device 700 or 750 can also be used to remove particles from the gas. In other words, in the plasma processing system 204, the operator can maintain one of the collection devices 700 or 750 without stopping operation.

[0169] As described above, the plasma processing system 204 has two trapping devices 700 and 750, but is not limited to this structure. In another embodiment of this disclosure, for example, the plasma processing system 204 may have three or more trapping devices, and a switching device configured to switch the gas supply target between these trapping devices.

[0170] Exhaust System 102

[0171] Figure 10 This is a block diagram of another exhaust system 102, different from exhaust system 100. (Refer to...) Figure 10As an example, exhaust system 102 includes: plasma processing system 206, semiconductor manufacturing apparatus 110, vacuum pump 120, and decontamination device 130. As an example, the semiconductor manufacturing apparatus 110, vacuum pump 120, and decontamination device 130 of exhaust system 102 have the same structure as the components of exhaust system 100. Therefore, these descriptions are omitted. As an example, plasma processing system 206 includes: plasma generator 300, collection device 500, gas supply device 402, and control device 220. As an example, the plasma generator 300, collection device 500, and control device 220 of plasma processing system 206 have the same structure as the components of plasma processing system 200. Therefore, these descriptions are omitted.

[0172] Reference Figure 10 The gas supply device 402 is connected to an etching gas supply source 983. The etching gas supply source 983 is configured to supply etching gas to the gas supply device 400. The gas supply device 402 is also connected to a collection device 500. The gas supply device 402 is configured to supply etching gas to the collection device 500 at an appropriate flow rate. More specifically, the gas supply device 402 has a flow control device (not shown) for adjusting the flow rate of the etching gas. When etching gas is supplied to the collection device 500, the etching gas reacts with the powder deposited on the collection device 500, causing the powder to vaporize. The vaporized powder is then discharged from the device via a vacuum pump 120 and a decontamination device 130. In other words, by using etching gas to remove powder deposited on the collection device 500, the plasma processing system 206 can reduce the deposition rate of powder on the collection device 500. As a result, the plasma processing system 206 can reduce the frequency of powder recovery operations from the collection device 500. Furthermore, the etching gas is selected based on the physical properties of the deposited powder. For example, the etching gas may contain NF3, CF4, CIF3, C4F8, C2F6, SF6, and / or H2.

[0173] In another embodiment of this disclosure, such as Figure 11 As shown, the gas supply device 402 can also be configured to supply etching gas to the plasma generator 300 instead of the collection device 500. In this case, the plasma generator 300 can radicalize the etching gas supplied from the gas supply device 402 and supply the radicalized etching gas to the collection device 500. As a result, the plasma processing system 206 can be combined with... Figure 10 In the same way, the powder deposited in the collection device 500 is removed, which can reduce the frequency of powder recovery operations from the collection device 500.

[0174] [Postscript]

[0175] Some or all of the above embodiments can also be described as follows, but are not limited to the following.

[0176] (Postscript 1)

[0177] The plasma processing system described in Appendix 1 comprises: a plasma generator fluidly connected to a semiconductor chamber of a semiconductor manufacturing apparatus, configured to pulverize a process gas supplied from the semiconductor chamber by plasma processing and oxidation treatment, forming a powder; and a trapping device fluidly connected to the plasma generator for removing the powder from the gas containing the powder, the trapping device comprising: a chamber; an inlet pipe configured to fluidly connect the plasma generator to the chamber and having an inlet opening located inside or on the surface of the chamber; and an outlet pipe for discharging the gas inside the chamber to the outside of the chamber and having an outlet opening located inside or on the surface of the chamber, the chamber being dry and free of liquid, the inlet opening and the outlet opening not being oriented opposite each other.

[0178] (Postscript 2)

[0179] The plasma processing system described in Appendix 2 is the plasma processing system described in Appendix 1, wherein the trapping device has a powder collector configured to be positively charged within the chamber.

[0180] (Note 3)

[0181] The plasma processing system described in Appendix 3 is a plasma processing system described in any one of Appendices 1 to 3, wherein the chamber has a cuboid shape and has a top surface, a bottom surface and a side surface connecting the top surface and the bottom surface, the inlet opening is located on the top surface, the outlet pipe passes through the bottom surface, bends in an L-shape at a bend located inside the chamber, and extends from the bend toward the side surface.

[0182] (Postscript 4)

[0183] The plasma processing system described in Appendix 4 is a plasma processing system described in any one of Appendices 1 to 3, wherein the chamber has an L-shaped cross-section and has a first top surface, a bottom surface, and a second top surface located above the first top surface, the inlet opening is located on the first top surface, the outlet pipe extends through the bottom surface in a portion located directly below the second top surface and extends inside the chamber toward the second top surface, and the outlet opening is formed in a portion of the outer peripheral surface of the outlet pipe that is cut out.

[0184] (Note 5)

[0185] The plasma processing system described in Appendix 5 is a plasma processing system described in any one of Appendices 1 to 3, wherein the chamber has a cuboid shape and has a top surface, a bottom surface and a side surface connecting the top surface and the bottom surface, the inlet opening is located on the top surface, the outlet pipe passes through the side surface, bends in an L-shape at a bend located inside the chamber, and extends from the bend toward the bottom surface.

[0186] (Note 6)

[0187] The plasma processing system described in Appendix 6 is the plasma processing system described in Appendix 2. The chamber includes a gas flow path chamber and a collection chamber. The collection device has a gate that separates the gas flow path chamber and the collection chamber by closing. When the gate is closed, the inlet piping is in fluid communication with the outlet piping via the gas flow path chamber. The powder collector is located inside the collection chamber.

[0188] (Note 7)

[0189] The plasma processing system described in Appendix 7 is a plasma processing system described in any one of Appendices 1 to 6, comprising a gas supply device configured to supply etching gas to the plasma generator, the plasma generator being configured to radicalize the etching gas supplied from the gas supply device and supply the radicalized etching gas, used to remove the powder, to the collection device.

[0190] (Postscript 8)

[0191] The plasma processing system described in Appendix 8 is a plasma processing system described in any one of Appendices 1 to 7, which includes a gas supply device configured to supply etching gas for removing the powder to the trapping device.

[0192] (Note 9)

[0193] The plasma processing system described in Appendix 9 is a plasma processing system as described in any one of Appendices 1 to 8, wherein the trapping device is a first trapping device, and the plasma processing system further comprises: a second trapping device in fluid communication with the plasma generator for removing the powder from the gas containing the powder; and a switching device configured to switch the supply target of the powder-containing gas supplied from the plasma generator between the first trapping device and the second trapping device.

[0194] (Postscript 10)

[0195] The plasma processing system described in Appendix 10 is a plasma processing system according to any one of Appendices 1 to 9, comprising: a gas supply device configured to supply rare gas, nitrogen, and oxidizing gas to the plasma generator; a pressure gauge for measuring the internal pressure of the plasma generator; and a control device, wherein the gas supply device has: a first flow control device for regulating the flow rate of the rare gas; a second flow control device for regulating the flow rate of the nitrogen; and a third flow control device for regulating the flow rate of the oxidizing gas, the control device being configured to control the first flow control device, the second flow control device, and the third flow control device based on the pressure measured by the pressure gauge.

[0196] (Postscript 11)

[0197] The exhaust system described in Appendix 11 comprises: a plasma processing system as described in any one of Appendices 1 to 10; the semiconductor manufacturing apparatus having the semiconductor chamber; a vacuum pump for evacuating the semiconductor chamber via the plasma generator and the trapping device; and a decontamination device for receiving the gas discharged from the vacuum pump and decontaminating the received gas.

[0198] (Postscript 12)

[0199] The exhaust system described in Appendix 12 is the same as the exhaust system described in Appendix 11, but with a control device that, when it detects that any one of the plasma generator, the vacuum pump, and the decontamination device has stopped, stops the remaining devices of the plasma generator, the vacuum pump, and the decontamination device, and outputs a signal to the semiconductor manufacturing apparatus to stop the semiconductor manufacturing process.

[0200] (Postscript 13)

[0201] The plasma processing system described in Appendix 13 is a plasma processing system according to any one of Appendices 1 to 10, wherein the plasma generator comprises: a ceramic tube; a coil wound around the outer periphery of the ceramic tube; a power source that applies a current of a predetermined frequency to the coil; a galvanometer for measuring the current flowing through the coil; and a control device configured to perform at least one of a first process and a second process when the maximum value of the current measured by the galvanometer is greater than a predetermined value when the power source applies current to the coil, wherein in the first process, the control device increases the current applied to the coil by the power source, and in the second process, the control device increases the frequency of the current applied to the coil.

[0202] (Postscript 14)

[0203] The plasma processing system described in Appendix 14 comprises: a plasma generator fluidly connected to a semiconductor chamber of a semiconductor manufacturing apparatus, configured to pulverize a process gas supplied from the semiconductor chamber by plasma processing and oxidation treatment, forming a powder; and a trapping device fluidly connected to the plasma generator for removing the powder from the gas containing the powder, the trapping device comprising: a chamber; an inlet pipe configured to fluidly connect the plasma generator to the chamber and having an inlet opening located inside or on the surface of the chamber; an outlet pipe for discharging the gas inside the chamber to the outside of the chamber and having an outlet opening located inside or on the surface of the chamber; and a shielding material located between the inlet opening and the outlet opening, the chamber being dry and free of liquid.

Claims

1. A plasma processing system, characterized in that, have: A plasma generator, fluidly connected to a semiconductor chamber of a semiconductor manufacturing apparatus, configured to pulverize a process gas supplied from the semiconductor chamber by plasma treatment and oxidation treatment, thereby forming a powder; and A collection device, fluidly connected to the plasma generator, is used to remove the powder from the gas containing the powder. The trapping device has: chamber; An inlet pipe configured to provide fluid communication between the plasma generator and the chamber, and having an inlet opening located inside the chamber or on the surface of the chamber; as well as An outlet pipe for discharging gas from the chamber to the outside of the chamber, and having an outlet opening located inside the chamber or on the surface of the chamber. The chamber does not contain any liquid and is in a dry state. The directions of the inlet opening and the outlet opening are not opposite to each other.

2. The plasma processing system according to claim 1, characterized in that, The collection device has a powder collector configured to be positively charged within the chamber.

3. The plasma processing system according to claim 1 or 2, characterized in that, The chamber has a cuboid shape and has a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface. The entrance opening is located on the top surface. The outlet pipe penetrates the bottom surface, bends in an L-shape at a bend located inside the chamber, and extends from the bend toward the side.

4. The plasma processing system according to claim 1 or 2, characterized in that, The chamber has an L-shaped cross-section and includes a first top surface, a bottom surface, and a second top surface located above the first top surface. The entrance opening is located on the first top surface. The outlet pipe penetrates the bottom surface at the portion located directly below the second top surface and extends towards the second top surface inside the chamber. The outlet opening is formed in the portion of the outer circumferential surface of the outlet pipe that is cut out.

5. The plasma processing system according to claim 1 or 2, characterized in that, The chamber has a cuboid shape and has a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface. The entrance opening is located on the top surface. The outlet pipe extends through the side, bends in an L-shape at a bend located inside the chamber, and extends from the bend toward the bottom surface.

6. The plasma processing system according to claim 2, characterized in that, The chamber includes a gas flow path chamber and a collection chamber. The trapping device has a gate that separates the gas flow path chamber from the trapping chamber by closing it. When the gate is closed, the inlet piping is in fluid communication with the outlet piping via the gas flow path chamber. The powder collector is located inside the collection chamber.

7. The plasma processing system according to claim 1 or 2, characterized in that, It includes a gas supply device configured to supply etching gas to the plasma generator. The plasma generator is configured to radicalize the etching gas supplied from the gas supply device and supply the radicalized etching gas, used to remove the powder, to the collection device.

8. The plasma processing system according to claim 1 or 2, characterized in that, The device includes a gas supply unit configured to supply etching gas to the trapping device for removing the powder.

9. The plasma processing system according to claim 1 or 2, characterized in that, The trapping device is the first trapping device. The plasma processing system also features: A second trapping device, fluidly connected to the plasma generator, is used to remove the powder from the gas containing the powder; and A switching device configured to switch the supply target of the powder-containing gas supplied from the plasma generator between the first trapping device and the second trapping device.

10. The plasma processing system according to claim 1 or 2, characterized in that, have: A gas supply device configured to supply rare gas, nitrogen and oxidizing gas to the plasma generator; A pressure gauge used to measure the internal pressure of the plasma generator; and Control device, The gas supply device has: A first flow control device is used to regulate the flow rate of the rare gas; A second flow control device is used to regulate the flow rate of the nitrogen gas; as well as A third flow control device is used to regulate the flow rate of the oxidizing gas. The control device is configured to control the first flow control device, the second flow control device, and the third flow control device based on the pressure measured by the pressure gauge.

11. An exhaust system, characterized in that, have: The plasma processing system according to claim 1 or 2; The semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus having the semiconductor chamber; A vacuum pump is used to evacuate the semiconductor chamber via the plasma generator and the trapping device; as well as A harmless treatment device that receives gas discharged from the vacuum pump and performs harmless treatment on the received gas.

12. The exhaust system according to claim 11, characterized in that, Equipped with a control device, When the control device detects that any one of the plasma generator, the vacuum pump, and the decontamination device has stopped, it stops the remaining devices of the plasma generator, the vacuum pump, and the decontamination device, and outputs a signal to the semiconductor manufacturing apparatus to stop the semiconductor manufacturing process.

13. The plasma processing system according to claim 1 or 2, characterized in that, The plasma generator includes: Ceramic tubes; A coil wound around the outer periphery of the ceramic tube; A power source that applies a current of a specified frequency to the coil; A galvanometer used to measure the current flowing through the coil; as well as Control device, The control device is configured to, when the power supply applies current to the coil, execute at least one of a first process and a second process if the maximum value of the current measured by the ammeter is greater than a predetermined value. In the first process, the control device increases the current applied to the coil by the power supply. In the second process, the control device increases the frequency of the current applied to the coil.

14. A plasma processing system, characterized in that, have: A plasma generator, fluidly connected to a semiconductor chamber of a semiconductor manufacturing apparatus, configured to pulverize a process gas supplied from the semiconductor chamber by plasma treatment and oxidation treatment, thereby forming a powder; and A collection device, fluidly connected to the plasma generator, is used to remove the powder from the gas containing the powder. The trapping device has: chamber; An inlet pipe configured to provide fluid communication between the plasma generator and the chamber, and having an inlet opening located inside the chamber or on the surface of the chamber; An outlet pipe for discharging gas from the chamber to the outside of the chamber, and having an outlet opening located inside the chamber or on the surface of the chamber; as well as A shielding structure located between the inlet opening and the outlet opening. The chamber does not contain any liquid and is in a dry state.

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