Large-angle low-pass high-resistance metamaterial antenna housing
By using a multi-layered, low-pass, high-resistivity metamaterial radome design, and by utilizing microstructures of different shapes and sizes and edge field coupling, the problem of deteriorated transmission characteristics of traditional radomes at large incident angles is solved, achieving broadband wave transmission and low radar cross section, thus meeting the requirements of high-performance communication and stealth.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-31
- Publication Date
- 2026-03-13
AI Technical Summary
Traditional radomes exhibit drastic deterioration in transmission characteristics at large incident angles, making it impossible to achieve broadband wave transmission and resulting in a high radar cross section, which makes it difficult to meet the requirements of high-performance communication and stealth.
The design employs a multi-layered, low-pass, high-impedance metamaterial radome. By setting microstructures of different shapes and sizes in different layers and combining them with edge field coupling to form a parasitic resonant circuit, broadband in-band transmission and fast out-of-band cutoff are achieved.
It achieves broadband wave transmission performance at large incident angles, reduces radar cross section, expands antenna operating coverage, and meets the requirements of high-performance communication and stealth.
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Figure CN121663182A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of metamaterials, and more specifically, to a large-angle, low-pass, high-resistivity metamaterial radome. Background Technology
[0002] Radomes are one of the most commonly used and important components in radar communication systems. With the trend towards wider bandwidth in communication systems, research on broadband radomes is increasingly being strengthened. While designing the broadband characteristics of a frequency selective surface (FSS), it is necessary to ensure the stability of its operating performance across the entire frequency band under different incident angles to improve the overall performance of the antenna system. For traditional FSS radomes, their frequency response is often highly sensitive to the incident angle of electromagnetic waves; as the incident angle increases, the transmission characteristics deteriorate sharply, achieving only a narrow operating bandwidth at large incident angles.
[0003] Existing radome design methods mainly include geometry optimization, material selection, and structural layering. Geometry optimization alone is insufficient to overcome the losses and phase shifts caused by large incident angles. Material selection and layered design can increase bandwidth to some extent, but at large incident angles, the impedance differences and phase delays between different layers lead to a sharp deterioration in transmission characteristics, making it impossible to achieve broadband transmission at large incident angles. Summary of the Invention
[0004] To address the problems in related technologies, this invention proposes a large-angle, low-pass, high-resistivity metamaterial radome, which solves the technical problems of having broadband in-band transmission at large incident angles and fast out-of-band cutoff to reduce the overall radar cross section (RCS).
[0005] This invention provides a large-angle, low-pass, high-resistance metamaterial radome, comprising a first prepreg layer, a second prepreg layer, a third prepreg layer, a fourth prepreg layer, a first core material layer, a second core material layer, a first substrate layer, a second substrate layer, and a third substrate layer. The stacking order of the radome's structures from the outside to the inside is: first substrate layer, first prepreg layer, first core material layer, second prepreg layer, second substrate layer, third prepreg layer, second core material layer, fourth prepreg layer, and third substrate layer. A first microstructure is disposed on the first substrate layer, a second microstructure is disposed on the second substrate layer, and a third microstructure and a fourth microstructure are disposed on the upper and lower surfaces of the third substrate layer, respectively. The first, third, and fourth microstructures are all band-resistance microstructures, and the second microstructure is a band-pass microstructure.
[0006] Preferably, the radome further includes a fifth prepreg layer and a sixth prepreg layer, and the stacking order of the structures of the radome from the outside to the inside is as follows: fifth prepreg layer, first substrate layer, first prepreg layer, first core layer, second prepreg layer, second substrate layer, third prepreg layer, second core layer, fourth prepreg layer, third substrate layer, and sixth prepreg layer.
[0007] Preferably, the first microstructure, the third microstructure, and the fourth microstructure have identical shapes, and the first microstructure, the third microstructure, and the fourth microstructure have different sizes.
[0008] Preferably, the first, third, and fourth microstructures are all hexagonal rings.
[0009] Preferably, the second microstructure includes a first conductive geometry and six identical second conductive geometries; The first conductive geometric structure is in the shape of a regular hexagonal ring; the six second conductive geometric structures are arranged sequentially end to end to form an approximate regular hexagonal structure, and a regular hexagonal first gap is formed at the center of the approximate regular hexagonal structure; the six second conductive geometric structures are respectively arranged on the six sides of the first conductive geometric structure. Each second conductive geometry includes a plurality of first protrusions, a plurality of second protrusions, and a plurality of third protrusions arranged sequentially and adjacent to each other; the plurality of second protrusions are identical; the plurality of first protrusions, the plurality of second protrusions, and the plurality of third protrusions are all vertically arranged on corresponding sides of the first conductive geometry; each second protrusion is rectangular in shape, and each first protrusion and each third protrusion is trapezoidal in shape; A second gap is formed between any two adjacent first protrusions, a third gap is formed between any two adjacent second protrusions, and each third gap communicates with the first gap; a fourth gap is formed between any two adjacent third protrusions. A fifth gap is formed between any two adjacent second conductive geometric structures, and each fifth gap is connected to the first gap; each second gap is connected to the adjacent fifth gap, and each fourth gap is connected to the adjacent fifth gap; The height of the multiple first protrusions increases sequentially from the direction away from the second protrusion to the direction of the second protrusion, and the height of the multiple third protrusions also increases sequentially from the direction away from the second protrusion to the direction of the second protrusion; each fifth gap coincides with a corresponding diagonal portion passing through the center of the first conductive geometry.
[0010] Preferably, the plurality of third protrusions and the plurality of first protrusions are symmetrical with respect to the plurality of second protrusions. The second gaps formed between any two adjacent first protrusions are different, the third gaps formed between any two adjacent second protrusions are all the same, the fourth gaps formed between any two adjacent third protrusions are different, and the fifth gaps formed between any two adjacent second conductive geometric structures are all the same.
[0011] Preferably, the materials of the first prepreg layer, the second prepreg layer, the third prepreg layer, the fourth prepreg layer, the fifth prepreg layer and the sixth prepreg layer all include carbon fiber prepreg or quartz fiber prepreg, the materials of the first core material layer and the second core material layer both include PMI foam, and the materials of the first substrate layer, the second substrate layer and the third substrate layer all include PI film.
[0012] Preferably, any two adjacent layers among the fifth prepreg layer, the first substrate layer, the first prepreg layer, the first core layer, the second prepreg layer, the second substrate layer, the third prepreg layer, the second core layer, the fourth prepreg layer, the third substrate layer, and the sixth prepreg layer are bonded together with an adhesive film.
[0013] Preferably, the dielectric constant of the first prepreg layer, the second prepreg layer, the third prepreg layer, the fourth prepreg layer, the fifth prepreg layer, and the sixth prepreg layer is 3.3, and the loss tangent is 0.005; the dielectric constant of the adhesive film is 3.2, and the loss tangent is 0.007; the dielectric constant of the first core layer and the second core layer is 1.12, and the loss tangent is 0.068; the dielectric constant of the first substrate layer, the second substrate layer, and the third substrate layer is 3.2, and the loss tangent is 0.002.
[0014] The beneficial effects of this invention are as follows: In the large-angle low-pass high-resistance metamaterial radome described in this embodiment of the invention, the upper and lower band-stop microstructures (i.e., the first microstructure, the third microstructure, and the fourth microstructure) achieve rapid cutoff outside the operating frequency band, reducing the radar cross section (RCS) of the radome; the middle band-pass microstructure (i.e., the second microstructure) achieves broadband wave transmission within the operating frequency band, thereby meeting the requirements of high-performance communication detection systems and stealth. Attached Figure Description
[0015] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0016] Figure 1 This is a schematic diagram of a large-angle, low-pass, high-impedance supermaterial radome according to an embodiment of the present invention.
[0017] Figure 2 for Figure 1 The diagram shows the first and second microstructures.
[0018] Figure 3 for Figure 1 The diagram shows the third and fourth microstructures.
[0019] Figure 4 for Figure 1 The diagram shows the wave transmission curve of the radome 100 in TM mode.
[0020] Figure 5 for Figure 1 The diagram shows the wave transmission curve of the radome 100 in TE mode. Detailed Implementation
[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention are within the scope of protection of the present invention.
[0022] This invention proposes a large-angle, low-pass, high-resistance metamaterial radome, which aims to achieve broadband in-band transmission and fast out-of-band cutoff at large incident angles to reduce the overall radar cross section (RCS) of the radome, thereby meeting the requirements of high-performance communication detection systems and stealth.
[0023] Figure 1 This is a schematic diagram of a large-angle, low-pass, high-impedance metamaterial radome 100 according to an embodiment of the present invention. Figure 1As shown, the radome 100 includes a first prepreg layer 10, a second prepreg layer 13, a third prepreg layer 14, a fourth prepreg layer 16, a first core material layer 12, a second core material layer 15, a first substrate layer 22, a second substrate layer 24, and a third substrate layer 26. The stacking order of the structures of the radome 100 from the outside to the inside is as follows: first substrate layer 22, first prepreg layer 10, first core material layer 12, second prepreg layer 13, second substrate layer 24, third prepreg layer 14, second core material layer 15, fourth prepreg layer 16, and third substrate layer 26. A first microstructure 220 is disposed on the first substrate layer 22, a second microstructure 240 is disposed on the second substrate layer 24, and a third microstructure 260 and a fourth microstructure 262 are disposed on the upper and lower surfaces of the third substrate layer 26, respectively; wherein, the first microstructure 220, the third microstructure 260 and the fourth microstructure 262 are all band-resistance type microstructures, and the second microstructure 242 is a band-pass type microstructure.
[0024] Furthermore, the radome 100 also includes a fifth prepreg layer 18 and a sixth prepreg layer 19. The stacking order of the structures of the radome 100 from the outside to the inside is as follows: fifth prepreg layer 18, first substrate layer 22, first prepreg layer 10, first core layer 12, second prepreg layer 13, second substrate layer 24, third prepreg layer 14, second core layer 15, fourth prepreg layer 16, third substrate layer 26 and sixth prepreg layer 19.
[0025] In this embodiment, the materials of the first prepreg layer 10, the second prepreg layer 13, the third prepreg layer 14, the fourth prepreg layer 16, the fifth prepreg layer 18, and the sixth prepreg layer 19 are, but are not limited to, carbon fiber prepreg or quartz fiber prepreg. The materials of the first core layer 12 and the second core layer 15 are, but are not limited to, PMI foam, and the materials of the first substrate layer 22, the second substrate layer 24, and the third substrate layer 26 are, but are not limited to, PI film.
[0026] Any two adjacent layers among the fifth prepreg layer 18, the first substrate layer 22, the first prepreg layer 10, the first core layer 12, the second prepreg layer 13, the second substrate layer 24, the third prepreg layer 14, the second core layer 15, the fourth prepreg layer 16, the third substrate layer 26, and the sixth prepreg layer 19 are bonded together with an adhesive film.
[0027] The dielectric constants of the first prepreg layer 10, the second prepreg layer 13, the third prepreg layer 14, the fourth prepreg layer 16, the fifth prepreg layer 18, and the sixth prepreg layer 19 are all 3.3, and the loss tangent is 0.005. The dielectric constant of the adhesive film is 3.2, and the loss tangent is 0.007. The dielectric constants of the first core layer 12 and the second core layer 15 are both 1.12, and the loss tangent is 0.068. The dielectric constants of the first substrate layer 22, the second substrate layer 24, and the third substrate layer 26 are all 3.2, and the loss tangent is 0.002.
[0028] In this embodiment, the thicknesses of the fifth prepreg layer 18, the first prepreg layer 10, the second prepreg layer 13, the third prepreg layer 14, the fourth prepreg layer 16, the sixth prepreg layer 19, the first core layer 12, and the second core layer 15 are 0.27 mm, 0.27 mm, 0.27 mm, 0.18 mm, 0.9 mm, 3.8 mm, and 4 mm, respectively.
[0029] In this embodiment, the first microstructure 220, the third microstructure 260, and the fourth microstructure 262 have the same shape, and the dimensions of the first microstructure 220, the third microstructure 260, and the fourth microstructure 262 are different.
[0030] Specifically, such as Figure 2 and Figure 3 As shown, the first microstructure 220, the third microstructure 260 and the fourth microstructure 262 are all hexagonal rings.
[0031] Specifically, the linewidth 'a' of the first microstructure 220 is 0.087 mm, and the length 'b' of the diagonal passing through the center of the first microstructure 220 is 5.9 mm. The linewidth 'g' of the third microstructure 260 is 0.086 mm, and the length 'h' of the diagonal passing through the center of the third microstructure 260 is 5.8 mm. The linewidth 'i' of the fourth microstructure 262 is 0.086 mm, and the length 'j' of the diagonal passing through the center of the fourth microstructure 262 is 6.44 mm.
[0032] Specifically, the second microstructure 240 includes a first conductive geometry 243 and six identical second conductive geometries 244.
[0033] The first conductive geometry 243 is in the shape of a regular hexagonal ring.
[0034] Six second conductive geometric structures 244 are arranged sequentially, one after the other, to form an approximate regular hexagonal structure. A first regular hexagonal gap is formed at the center of the approximate regular hexagonal structure. The six second conductive geometric structures 244 are respectively arranged on the six sides of the first conductive geometric structure 243.
[0035] Each second conductive geometry 244 includes a plurality of first protrusions 344, a plurality of second protrusions 346, and a plurality of third protrusions 348 arranged sequentially and adjacent to each other. The plurality of second protrusions 346 are identical. The plurality of first protrusions 344, the plurality of second protrusions 346, and the plurality of third protrusions 348 are all vertically arranged on corresponding sides of the first conductive geometry 243. Each second protrusion 346 is rectangular in shape, and each first protrusion 344 and each third protrusion 348 is trapezoidal in shape.
[0036] A second gap is formed between any two adjacent first protrusions 344, a third gap is formed between any two adjacent second protrusions 346, and each third gap is connected to the first gap; a fourth gap is formed between any two adjacent third protrusions 348.
[0037] A fifth gap 246 is formed between any two adjacent second conductive geometric structures 244, and each fifth gap 246 is connected to the first gap; each second gap is connected to the adjacent fifth gap 246, and each fourth gap is connected to the adjacent fifth gap 246.
[0038] The heights of the plurality of first protrusions 344 increase sequentially from the direction away from the second protrusion 346 to the direction of the direction of the plurality of third protrusions 348, and the heights of the plurality of third protrusions 348 also increase sequentially from the direction away from the second protrusion 346 to the direction of ...
[0039] The plurality of third protrusions 348 and the plurality of first protrusions 344 are symmetrically arranged with respect to the plurality of second protrusions 346. The second gaps formed between any two adjacent first protrusions 344 are all different, the third gaps formed between any two adjacent second protrusions 346 are all identical, the fourth gaps formed between any two adjacent third protrusions 348 are all different, and the fifth gaps formed between any two adjacent second conductive geometries 244 are all identical.
[0040] Specifically, the linewidth c of the first conductive geometry 243 is 0.09 mm. The linewidth d of the second conductive geometry 244 is 0.144 mm. The distance e between the two parallel opposite sides of the first hexagonal slit is 3.122 mm. The length f of the diagonal passing through the center of the first conductive geometry 243, which is a hexagonal ring, is 6.531 mm.
[0041] In other optional embodiments, the first, third, and fourth microstructures are all in the shape of regular quadrilateral rings; the second microstructure includes a first conductive geometry and four identical second conductive geometries. The first conductive geometric structure is in the shape of a regular quadrilateral ring; the four second conductive geometric structures are arranged sequentially and adjacent to each other to form an approximately regular quadrilateral structure, and a first quadrilateral gap is formed at the center of the approximately regular quadrilateral structure; the four second conductive geometric structures are respectively arranged on the four sides of the first conductive geometric structure. Each second conductive geometry includes a plurality of first protrusions, a plurality of second protrusions, and a plurality of third protrusions arranged sequentially and adjacent to each other; the plurality of second protrusions are identical; the plurality of first protrusions, the plurality of second protrusions, and the plurality of third protrusions are all vertically arranged on corresponding sides of the first conductive geometry; each second protrusion is rectangular in shape, and each first protrusion and each third protrusion is trapezoidal in shape; A second gap is formed between any two adjacent first protrusions, a third gap is formed between any two adjacent second protrusions, and each third gap communicates with the first gap; a fourth gap is formed between any two adjacent third protrusions. A fifth gap is formed between any two adjacent second conductive geometric structures, and each fifth gap is connected to the first gap; each second gap is connected to the adjacent fifth gap, and each fourth gap is connected to the adjacent fifth gap; The height of the multiple first protrusions increases sequentially from the direction away from the second protrusion to the direction of the second protrusion, and the height of the multiple third protrusions also increases sequentially from the direction away from the second protrusion to the direction of the second protrusion; each fifth gap coincides with a corresponding diagonal portion passing through the center of the first conductive geometry.
[0042] In the alternative embodiments, similarly, the plurality of third protrusions and the plurality of first protrusions are symmetrical with respect to the plurality of second protrusions, the second gaps formed between any two adjacent first protrusions are different, the third gaps formed between any two adjacent second protrusions are all the same, the fourth gaps formed between any two adjacent third protrusions are different, and the fifth gaps formed between any two adjacent second conductive geometries are all the same.
[0043] Traditional single-layer FSS in existing technologies presents a contradiction in achieving wide-angle stability and wideband characteristics. Increasing the complexity of microstructure units to expand bandwidth often worsens wide-angle stability; while pursuing wide-angle stability usually requires sacrificing bandwidth or increasing the number of structural layers, leading to design complexity, increased cost, and increased insertion loss.
[0044] The innovations of the radome 100 of this invention compared to the prior art are as follows: the resonance principle of the radome 100 is that each microstructure unit is equivalent to an LC resonant circuit; the radome 100 provides an FSS array based on symmetrical conformal coupling units, the main unit of which is a multi-layered nested microstructure; by setting coupling structures of microstructures of different shapes and / or different sizes in different layers, and by forming additional parasitic resonant circuits through edge field coupling, the bandwidth is expanded; and the hexagonal arrangement of the microstructures has better wide-angle stability. In other optional embodiments, the quadrilateral arrangement of the microstructures also has good wide-angle stability.
[0045] Figure 4 for Figure 1 The diagram shows the wave transmission curve of the radome 100 in TM mode. Figure 5 for Figure 1 The diagram shows the transmittance curve of the radome 100 in TE mode. Simulation results are as follows... Figure 4 and Figure 5 As shown in Table 1, the transmission statistics results are presented in the table.
[0046] Table 1
[0047] As shown in Table 1 above, the embodiments of the present invention disclose a broadband transparent radome 100 with a large incident angle (i.e., a large-angle low-pass high-resistance metamaterial radome 100). The radome 100 shown in the present invention adopts a C-layer sandwich three-layer microstructure design, with upper and lower layers being band-resistive microstructures (i.e., Figure 1 The first microstructure 220, the third microstructure 260, and the fourth microstructure 262 shown achieve fast out-of-band cutoff, reducing the RCS of the radome 100; the intermediate bandpass microstructure (i.e. Figure 1 The second microstructure 240 shown achieves broadband in-band transmission. Simulation calculations, as shown in Table 1 above, demonstrate that in both TE and TM modes, the radome 100 achieves an average transmittance greater than 80% within the operating frequency band of 0-1 GHz at incident angles of 0°, 10°, 20°, 30°, 40°, 50°, and 60°; and in both TE and TM modes, the radome 100 achieves fast cutoff outside the operating frequency band of 6-12 GHz. The large-angle low-pass, high-impedance metamaterial radome 100 of this invention does not limit the incident angle of electromagnetic waves, and still exhibits excellent in-band transmission and fast cutoff performance outside the operating frequency band for a relatively large range of incident angles (e.g., 0°~60°).
[0048] It should be noted that there is currently no quantitative definition of high transmittance in scientific research and engineering, and this concept is indeed difficult to define numerically. Of course, generally speaking, and without other limiting conditions, a transmittance higher than -1dB (80%) is generally considered high transmittance.
[0049] For specific examples, such as Figure 4 and Figure 5 As shown, when the incident angle is 60°, the radome 100 exhibits the following characteristics: 1) Transparent zone: In both TE and TM modes, the bandwidth of the transparent zone with a transmittance greater than 80% is 1 GHz; 2) Cutoff zone: In both TE and TM modes, an out-of-band cutoff of more than -5 dB in the 6-12 GHz frequency band can be achieved. This means that the antenna coverage range can be effectively expanded while maintaining a low RCS, ensuring efficient communication of the antenna system.
[0050] This invention proposes a design for a large-angle broadband low-pass high-impedance radome (i.e., a large-angle low-pass high-impedance metamaterial radome 100) for aircraft communication and navigation antennas. It is primarily applied in satellite communication, radar systems, aerospace radomes, wireless sensor networks, and electromagnetic compatibility. Its advantage lies in maintaining a wide bandwidth even at large incident angles, effectively expanding the antenna's operating coverage and thus improving the overall performance of the antenna system. Furthermore, in military applications, considering stealth requirements, the radome 100 of this invention is designed with both effective in-band passability and rapid out-of-band cutoff to meet stealth requirements.
[0051] When designing a wideband transmission antenna radome 100 at large incident angles, traditional transmission materials and methods often lead to poor impedance matching, enhanced multiple reflections and interference effects, and the excitation of higher-order modes as the incident angle increases. These factors combined cause a sharp decline in transmission performance. Therefore, precise control of the electromagnetic properties of the material and the adoption of a novel, complex structural design are required to achieve consistent high transmittance at large incident angles across a wide bandwidth. Simulation experiments have demonstrated that the technical solution of the radome 100 described in this invention achieves significant technical advantages (i.e., wide-angle stability and wideband characteristics) compared to existing technologies, overcoming the shortcomings of existing technologies.
[0052] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A large-angle, low-pass, high-resistance metamaterial radome, characterized in that: The radome comprises a first prepreg layer, a second prepreg layer, a third prepreg layer, a fourth prepreg layer, a first core material layer, a second core material layer, a first substrate layer, a second substrate layer, and a third substrate layer. The stacking order of the structures of the radome from the outside to the inside is: first substrate layer, first prepreg layer, first core material layer, second prepreg layer, second substrate layer, third prepreg layer, second core material layer, fourth prepreg layer, and third substrate layer. A first microstructure is disposed on the first substrate layer, a second microstructure is disposed on the second substrate layer, and a third microstructure and a fourth microstructure are disposed on the upper and lower surfaces of the third substrate layer, respectively. The first, third, and fourth microstructures are all band-stop microstructures, and the second microstructure is a band-pass microstructure.
2. The radome according to claim 1, characterized in that: It also includes a fifth prepreg layer and a sixth prepreg layer. The stacking order of the structures of the radome from the outside to the inside is as follows: fifth prepreg layer, first substrate layer, first prepreg layer, first core layer, second prepreg layer, second substrate layer, third prepreg layer, second core layer, fourth prepreg layer, third substrate layer, and sixth prepreg layer.
3. The radome according to claim 2, characterized in that: The first, third, and fourth microstructures have identical shapes, but their dimensions are different.
4. The radome according to claim 3, characterized in that: The first, third, and fourth microstructures are all hexagonal rings.
5. The radome according to claim 2, characterized in that, The second microstructure includes a first conductive geometry and six identical second conductive geometries; The first conductive geometric structure is in the shape of a regular hexagonal ring; the six second conductive geometric structures are arranged sequentially end to end to form an approximate regular hexagonal structure, and a regular hexagonal first gap is formed at the center of the approximate regular hexagonal structure; the six second conductive geometric structures are respectively arranged on the six sides of the first conductive geometric structure. Each second conductive geometry includes a plurality of first protrusions, a plurality of second protrusions, and a plurality of third protrusions arranged sequentially and adjacent to each other; the plurality of second protrusions are identical; the plurality of first protrusions, the plurality of second protrusions, and the plurality of third protrusions are all vertically arranged on the corresponding sides of the first conductive geometry; Each second protrusion is rectangular in shape, and each first protrusion and each third protrusion are trapezoidal in shape; A second gap is formed between any two adjacent first protrusions, a third gap is formed between any two adjacent second protrusions, and each third gap communicates with the first gap; a fourth gap is formed between any two adjacent third protrusions. A fifth gap is formed between any two adjacent second conductive geometric structures, and each fifth gap is connected to the first gap; each second gap is connected to the adjacent fifth gap, and each fourth gap is connected to the adjacent fifth gap; The height of the multiple first protrusions increases sequentially from the direction away from the second protrusion to the direction of the second protrusion, and the height of the multiple third protrusions also increases sequentially from the direction away from the second protrusion to the direction of the second protrusion; each fifth gap coincides with a corresponding diagonal portion passing through the center of the first conductive geometry.
6. The radome according to claim 5, characterized in that: The plurality of third protrusions and the plurality of first protrusions are symmetrical with respect to the plurality of second protrusions. The second gaps formed between any two adjacent first protrusions are different, the third gaps formed between any two adjacent second protrusions are all the same, the fourth gaps formed between any two adjacent third protrusions are different, and the fifth gaps formed between any two adjacent second conductive geometric structures are all the same.
7. The radome according to claim 2, characterized in that, The first, third, and fourth microstructures are all in the shape of regular quadrilateral rings; The second microstructure includes a first conductive geometry and four identical second conductive geometries; The first conductive geometric structure is in the shape of a regular quadrilateral ring; the four second conductive geometric structures are arranged sequentially and adjacent to each other to form an approximately regular quadrilateral structure, and a first quadrilateral gap is formed at the center of the approximately regular quadrilateral structure; the four second conductive geometric structures are respectively arranged on the four sides of the first conductive geometric structure. Each second conductive geometry includes a plurality of first protrusions, a plurality of second protrusions, and a plurality of third protrusions arranged sequentially and adjacent to each other; the plurality of second protrusions are identical; the plurality of first protrusions, the plurality of second protrusions, and the plurality of third protrusions are all vertically arranged on the corresponding sides of the first conductive geometry; Each second protrusion is rectangular in shape, and each first protrusion and each third protrusion are trapezoidal in shape; A second gap is formed between any two adjacent first protrusions, a third gap is formed between any two adjacent second protrusions, and each third gap communicates with the first gap; a fourth gap is formed between any two adjacent third protrusions. A fifth gap is formed between any two adjacent second conductive geometric structures, and each fifth gap is connected to the first gap; each second gap is connected to the adjacent fifth gap, and each fourth gap is connected to the adjacent fifth gap; The height of the multiple first protrusions increases sequentially from the direction away from the second protrusion to the direction of the second protrusion, and the height of the multiple third protrusions also increases sequentially from the direction away from the second protrusion to the direction of the second protrusion; each fifth gap coincides with a corresponding diagonal portion passing through the center of the first conductive geometry.
8. The radome according to claim 2, characterized in that: The materials of the first, second, third, fourth, fifth, and sixth prepreg layers all include carbon fiber prepreg or quartz fiber prepreg. The materials of the first and second core material layers both include PMI foam. The materials of the first, second, and third substrate layers all include PI film.
9. The radome according to claim 2, characterized in that: Any two adjacent layers among the fifth prepreg layer, the first substrate layer, the first prepreg layer, the first core layer, the second prepreg layer, the second substrate layer, the third prepreg layer, the second core layer, the fourth prepreg layer, the third substrate layer, and the sixth prepreg layer are bonded together with an adhesive film.
10. The radome according to claim 9, characterized in that, The dielectric constants of the first, second, third, fourth, fifth, and sixth prepreg layers are all 3.3, and the loss tangent is 0.
005. The dielectric constant of the adhesive film is 3.2, and the loss tangent is 0.
007. The dielectric constants of the first and second core layers are both 1.12, and the loss tangent is 0.
068. The dielectric constants of the first, second, and third substrate layers are all 3.2, and the loss tangent is 0.002.