Busbar structure, low-inductance bus capacitor and power electronic system
By employing a double-layer stacked top busbar and a side busbar design with opposite polarity in the low-inductance bus capacitor, the problems of capacitor temperature rise and parasitic inductance are solved, achieving higher heat dissipation efficiency and system stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-26
- Publication Date
- 2026-03-13
AI Technical Summary
Existing low-inductance bus capacitors are prone to failure due to excessive temperature rise in high-power applications. Furthermore, their high parasitic inductance can easily cause voltage spikes at high switching speeds, affecting the stability and reliability of power electronic systems.
The design employs a double-layer stacked top busbar and multiple side busbars with opposite polarities. The side busbars conduct heat from the core and achieve magnetic circuit coupling, reducing temperature rise and parasitic inductance, and avoiding excessively high peak voltages.
It improves the heat dissipation capacity and efficiency of low-inductance bus capacitors, reduces temperature rise and parasitic inductance, and enhances the stability and reliability of power electronic systems.
Smart Images
Figure CN121663271A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of busbar capacitor technology, and more specifically, to a busbar structure, a low-inductance busbar capacitor, and a power electronic system. Background Technology
[0002] Power electronic systems are multidisciplinary systems that use semiconductor devices to convert and control electrical energy. Their core function is to achieve efficient, accurate, and stable conversion and utilization of electrical energy. Power electronic systems are widely used in new energy vehicles, renewable energy and other fields.
[0003] Low-inductance bus capacitors are indispensable in power electronic systems, serving as crucial for improving energy efficiency, ensuring reliability, increasing power density, and adapting to the development of new power devices. Currently, most low-inductance bus capacitors have relatively simple busbar structures, as can be seen... Figure 1 The diagram shows an existing low-inductance bus capacitor with an upper busbar and a lower busbar, with the core positioned between the upper and lower busbars. This type of low-inductance bus capacitor is prone to failure in power electronic systems due to excessive temperature rise during high-power applications. Furthermore, its high parasitic inductance can easily lead to voltage spikes in the circuit under high switching speeds of power devices, potentially exceeding the withstand voltage limit of the power devices and reducing the stability and reliability of the power electronic system. Summary of the Invention
[0004] The purpose of this application is to provide a busbar structure, a low-inductance bus capacitor, and a power electronic system. This busbar structure can effectively improve the heat dissipation capacity and efficiency of the low-inductance bus capacitor, reduce the temperature rise of the low-inductance bus capacitor, and reduce the parasitic inductance of the low-inductance bus capacitor, effectively avoiding excessively high peak voltages.
[0005] To achieve the above objectives, in a first aspect, this application provides a busbar structure for use in busbar capacitors, the busbar structure comprising: Top busbar, wherein the top busbar is configured with a double-layer stacked structure; Side busbars, there are multiple side busbars, the multiple side busbars are arranged in parallel on the top busbar, and the polarities of adjacent side busbars are opposite, and one side busbar of one polarity is surrounded by a side busbar of another polarity.
[0006] In the implementation of the above technical solution, this busbar structure can be applied to low-inductance bus capacitors. It adopts a novel structural design, with the top busbar configured as a double-layer stacked structure. This effectively improves the heat dissipation capacity and efficiency of the low-inductance bus capacitors, reduces their temperature rise, enhances their operating capability under high-power conditions and their ability to absorb large ripple currents, and also reduces the parasitic inductance of the low-inductance bus capacitors, effectively preventing excessively high peak voltages. Furthermore, this busbar structure features multiple parallel... The side busbars on the top busbar are used to house the cores, which is different from the existing arrangement of low-inductance bus capacitor cores. Most of the heat generated inside the core can be conducted to the top busbar through the side busbars and then diffused outwards through the top busbar, which can better dissipate heat from the low-inductance bus capacitors. In addition, the polarities of adjacent side busbars are opposite, with one side busbar being wrapped by the other side busbar, which makes the magnetic circuit coupled. The structural design is extremely reasonable and scientific, which can fully guarantee the stability and reliability of the low-inductance bus capacitors.
[0007] In a preferred embodiment of this application, the top busbar includes a first top busbar and a second top busbar. The first top busbar and the second top busbar are stacked, and a gap is left between the first top busbar and the second top busbar.
[0008] In the implementation of the above technical solution, a gap is left between the first top busbar and the second top busbar in the stacked configuration, so that the first top busbar and the second top busbar are set close to each other. This can greatly reduce the stacking distance between the first top busbar and the second top busbar, thereby better reducing the parasitic inductance of the low-inductance bus capacitor and more effectively avoiding excessively high peak voltage.
[0009] In a preferred embodiment of this application, the side busbar located in the middle position other than the two ends among the plurality of side busbars is configured as a double-layer stacked structure, and the polarity of the two unit busbars in a single double-layer stacked structure side busbar is the same.
[0010] In the implementation of the above technical solution, the side busbar located in the middle position of the side busbar is set as a double-layer stacked structure, and the two unit busbars in a single double-layer stacked structure have the same polarity. This facilitates the setting of the core in the side busbar and makes it easier for a side busbar of one polarity to be wrapped by a side busbar of another polarity, which makes it easier to achieve magnetic circuit coupling.
[0011] In a preferred embodiment of this application, a gap is left between the two unit busbars in the double-layer stacked structure side busbar.
[0012] In the implementation of the above technical solution, a gap is left between the two unit busbars in the double-layer stacked structure side busbar, so that the two unit busbars in the double-layer stacked structure side busbar are set close to the ground. This can greatly reduce the stacking distance of the two unit busbars in the side busbar, thereby better reducing the parasitic inductance of the low-inductance bus capacitor and more effectively avoiding excessively high peak voltage.
[0013] In a preferred embodiment of this application, one of the adjacent side busbars is connected to the first top busbar, and the other of the adjacent side busbars is connected to the second top busbar.
[0014] In the implementation of the above technical solution, multiple side busbars are staggered to the first top busbar and the second top busbar, which enables the multiple side busbars to conduct the heat generated inside the core to the first top busbar and the second top busbar more evenly. This makes full use of the first top busbar and the second top busbar, and is more conducive to the top busbar to diffuse the heat outward, thereby further improving the heat dissipation capacity and heat dissipation efficiency.
[0015] In a preferred embodiment of this application, the first top busbar and the second top busbar are provided with corresponding connection holes corresponding to the plurality of side busbars.
[0016] In the implementation of the above technical solution, the connection holes provided on the first top busbar and the second top busbar can facilitate the connection of multiple side busbars with the first top busbar and the second top busbar, and facilitate the manufacturing and processing of the busbars.
[0017] In a preferred embodiment of this application, five side busbars are provided, and four core mounting positions are formed by adjacent side busbars among the five side busbars.
[0018] In the implementation of the above technical solution, setting five side busbars is a commonly used and practical busbar structure, which makes the busbar structure more practical and applicable.
[0019] In a preferred embodiment of this application, a flow-through hole is provided on the side busbar at the position corresponding to the core.
[0020] In the implementation of the above technical solution, opening a shunt hole at the corresponding core setting position on the side busbar can help reduce the parasitic inductance of the low-inductance bus capacitor, making the parasitic inductance of the low-inductance bus capacitor even lower.
[0021] Secondly, this application provides a low-inductance bus capacitor, including a capacitor core and the aforementioned busbar structure, wherein the capacitor core is disposed between adjacent side busbars.
[0022] Thirdly, this application provides a power electronic system including the aforementioned low-inductance bus capacitor.
[0023] This application discloses a busbar structure, a low-inductance busbar capacitor, and a power electronic system, which, compared with the prior art, have at least the following advantages: The busbar structure of this application can be applied to busbar capacitors, especially low-inductance busbar capacitors. It adopts a novel structural design, setting the top busbar as a double-layer stacked structure, which effectively improves the heat dissipation capacity and efficiency of low-inductance busbar capacitors, reduces their temperature rise, enhances their operating capability under high-power conditions and their ability to absorb large ripple currents, and also reduces the parasitic inductance of the low-inductance busbar capacitors, effectively avoiding excessively high peak voltages. Furthermore, this busbar structure features multiple parallel components arranged on the top busbar. The side busbars are positioned on the top, with the cores placed between adjacent side busbars. This arrangement of the cores differs from the existing arrangement of low-inductance bus capacitor cores. Most of the heat generated inside the core can be conducted through the side busbars to the top busbar, and then diffused outwards from the top busbar, which can better dissipate heat from the low-inductance bus capacitors. Furthermore, the polarities of adjacent side busbars are opposite, with one type of side busbar being wrapped by the other type, resulting in magnetic circuit coupling. The structural design is extremely reasonable and scientific, which can fully guarantee the stability and reliability of the low-inductance bus capacitors.
[0024] The low-inductance bus capacitor of this application adopts the aforementioned busbar structure, which can effectively improve the heat dissipation capacity and efficiency of the low-inductance bus capacitor, reduce the temperature rise of the low-inductance bus capacitor, improve the working capacity of the low-inductance bus capacitor under high power conditions and the ability to absorb large ripple current, and also reduce the parasitic inductance of the low-inductance bus capacitor, effectively avoiding excessively high peak voltages; in addition, the magnetic circuit coupling of this low-inductance bus capacitor has an extremely reasonable and scientific structural design, which can fully guarantee the stability and reliability of the low-inductance bus capacitor.
[0025] The power electronic system of this application uses the aforementioned low-inductance bus capacitor. The temperature rise of the low-inductance bus capacitor is reduced, which can greatly reduce the possibility of capacitor failure due to excessive temperature rise in high-power applications in power electronic systems. Furthermore, the low-inductance bus capacitor has low parasitic inductance, which is less likely to cause voltage spikes in the circuit due to parasitic inductance under the high switching speed of power devices. This can effectively avoid excessively high peak voltages, effectively protect power devices, better meet the high requirements of power devices for low-inductance bus capacitors, and improve the stability and reliability of the power electronic system. Attached Figure Description
[0026] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0027] Figure 1 This is a schematic diagram of the structure of a low-inductance bus capacitor in the prior art; Figure 2 This is a schematic diagram of the structure of the low-inductance bus capacitor provided in an embodiment of this application; Figure 3 This is a three-dimensional structural diagram of the busbar structure provided in the embodiments of this application; Figure 4 This is a side view of the busbar structure provided in the embodiments of this application; Figure 5 yes Figure 4 An enlarged schematic diagram of the local structure; Figure 6 This is a schematic diagram of the structure of the capacitor core provided in the embodiments of this application.
[0028] Reference numerals: 11, top busbar; 111, first top busbar; 112, second top busbar; 12, side busbar; 121, unit busbar; 122, branch flow hole; 13, capacitor core. Detailed Implementation
[0029] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0030] In this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.
[0031] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.
[0032] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or a point connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.
[0033] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, elements, or components (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, elements, or components. Unless otherwise stated, "a plurality of" means two or more.
[0034] Currently, the busbar structure of most low-inductance bus capacitors is designed to be relatively simple, as can be seen from... Figure 1 The diagram shows an existing low-inductance bus capacitor with an upper busbar and a lower busbar, with the core positioned between the upper and lower busbars. This type of low-inductance bus capacitor is prone to failure in power electronic systems due to excessive temperature rise during high-power applications. Furthermore, its high parasitic inductance can easily lead to voltage spikes in the circuit under high switching speeds of power devices, potentially exceeding the withstand voltage limit of the power devices and reducing the stability and reliability of the power electronic system.
[0035] To address the problems in the prior art, this application provides a busbar structure, a low-inductance bus capacitor, and a power electronic system. This busbar structure can effectively improve the heat dissipation capacity and efficiency of the low-inductance bus capacitor, reduce the temperature rise of the low-inductance bus capacitor, and reduce the parasitic inductance of the low-inductance bus capacitor, effectively avoiding excessively high peak voltages.
[0036] Example 1 See Figures 2 to 6 An embodiment of this application provides a busbar structure, comprising: Top busbar 11 is configured as a double-layer stacked structure; There are multiple side busbars 12, which are arranged in parallel on the top busbar 11. The polarities of adjacent side busbars 12 are opposite, and one type of side busbar 12 is surrounded by another type of side busbar 12.
[0037] One busbar structure of this application embodiment can be applied to busbar capacitors, and is particularly suitable for low-inductance busbar capacitors.
[0038] In this embodiment, multiple side busbars 12 are arranged parallel to each other on the top busbar 11, and the multiple side busbars 12 are arranged perpendicular to the top busbar 11; preferably, the multiple side busbars 12 are arranged at equal intervals on the top busbar 11; in this embodiment, cores are arranged between adjacent side busbars 12, as detailed in the following example. Figure 2 , Figure 2 The low-inductance bus capacitor illustrates the structure of the busbar and the core.
[0039] In this embodiment, the polarities of adjacent side busbars 12 are opposite. This can be understood as all adjacent side busbars 12 having opposite polarities. For example, if one of the adjacent side busbars 12 is positive, the other of the adjacent side busbars 12 is negative. If a side busbar 12 has two adjacent side busbars 12, and the side busbar 12 is positive, then both of its adjacent side busbars 12 are negative. In this embodiment, a side busbar 12 of one polarity being surrounded by a side busbar 12 of another polarity means that a side busbar 12 of one polarity is surrounded by an adjacent side busbar 12 of another polarity. That is, a side busbar 12 of one polarity will be surrounded by two adjacent side busbars 12 of another polarity. Understandably, in this case, the number of side busbars 12 is set to an odd number. For example, the number of side busbars 12 can be set to three, five, or seven, so as to ensure that a side busbar 12 of one polarity is surrounded by a side busbar 12 of another polarity.
[0040] An embodiment of this application provides a busbar structure applicable to low-inductance bus capacitors. It employs a novel structural design, with the top busbar 11 configured as a double-layer stacked structure. This effectively improves the heat dissipation capacity and efficiency of the low-inductance bus capacitors, reduces their temperature rise, enhances their operating capability under high-power conditions and their ability to absorb large ripple currents, and also reduces the parasitic inductance of the low-inductance bus capacitors, effectively preventing excessively high peak voltages. Furthermore, this busbar structure includes multiple side busbars arranged parallel to each other on the top busbar 11. 12. The adjacent side busbars 12 are used to set the core, which makes the core setting method different from the existing low inductance bus capacitor core setting method. Most of the heat generated inside the core can be conducted through the side busbars 12 to the top busbar 11, and then diffused outward through the top busbar 11, which can better dissipate heat from the low inductance bus capacitor. In addition, the polarities of the adjacent side busbars 12 are opposite, with one side busbar 12 of one polarity being wrapped by the other side busbar 12, which makes the magnetic circuit coupled. The structural design is extremely reasonable and scientific, which can fully guarantee the stability and reliability of the low inductance bus capacitor.
[0041] For example, taking a low-inductance bus capacitor with specifications of 500V and 600μF as an example, its DC input current is 200A and its ripple current is 120A. After being connected to... Figure 1 The following data comparison table shows the experimental results of comparing the low-inductance bus capacitors (of the same specification) of the prior art:
[0042] The data comparison table obtained from the experiment shows that the low-inductance busbar capacitor manufactured by the busbar structure in this embodiment is significantly better than... Figure 1 The prior art low-inductance bus capacitor shown reduces the hot spot temperature by 5°C and the inductance by 1.3nH.
[0043] In this embodiment, the side busbar 12 located in the middle position outside the two ends among the multiple side busbars 12 is set as a double-layer stacked structure, and the polarity of the two unit busbars 121 in a single double-layer stacked structure side busbar 12 is the same.
[0044] Specifically, the side busbar 12 located in the middle position other than the two ends among the multiple side busbars 12 is set as a double-layer stacked structure, that is, the two side busbars 12 located at the two ends among the multiple side busbars 12 adopt a single-layer busbar, while the other side busbars 12 except for the two side busbars 12 located at the two ends are set as a double-layer stacked structure. The two unit busbars 121 in a single double-layer stacked structure side busbar 12 have the same polarity, that is, the polarity of the two unit busbars 121 in a single double-layer stacked structure side busbar 12 is either negative or positive. It can be understood that if the polarity of the two unit busbars 121 in a double-layer stacked structure side busbar 12 is positive, then the polarity of the two unit busbars 121 in another double-layer stacked structure side busbar 12 adjacent to the side busbar 12 of the double-layer stacked structure is negative, thus satisfying the setting of opposite polarities of adjacent side busbars 12.
[0045] In the above structure, the side busbar 12 located in the middle position of the side busbar 12 is set as a double-layer stacked structure, and the two unit busbars 121 in the side busbar 12 with a single double-layer stacked structure have the same polarity, which facilitates the setting of the core in the side busbar 12 and makes it easier for a side busbar 12 of one polarity to be wrapped by a side busbar 12 of another polarity, which makes it easier to realize magnetic circuit coupling.
[0046] Furthermore, in this embodiment, a gap is left between the two unit busbars 121 in the double-layer stacked structure side busbar 12.
[0047] In the above structure, a gap is left between the two unit busbars 121 in the double-layer stacked side busbar 12, so that the two unit busbars 121 in the double-layer stacked side busbar 12 are arranged close to each other. This can greatly reduce the stacking distance of the two unit busbars 121 in the side busbar 12, thereby better reducing the parasitic inductance of the low-inductance bus capacitor and more effectively avoiding excessively high peak voltage.
[0048] For example, in this embodiment, five side busbars 12 are provided, and four core mounting positions are formed among the five adjacent side busbars 12.
[0049] Specifically, in this embodiment, the two side busbars 12 located at both ends of the five side busbars 12 are single-layer busbars, while the other three side busbars 12, excluding the two side busbars 12 located at both ends, are set as double-layer stacked structures; wherein, the two side busbars 12 located at both ends of the five side busbars 12 have the same polarity as the middle side busbar 12 (i.e., the third side busbar 12), and the remaining two side busbars 12 have the opposite polarity to the three side busbars 12.
[0050] In the above structure, setting five side busbars 12 is a commonly used and practical busbar structure, which makes the busbar structure more practical and applicable.
[0051] Example 2 See Figures 2 to 6 Based on the above embodiment one, a busbar structure in this embodiment includes: Top busbar 11 is configured as a double-layer stacked structure; Side busbar 12, there are multiple side busbars 12, multiple side busbars 12 are arranged in parallel on top busbar 11, and the polarities of adjacent side busbars 12 are opposite, one side busbar 12 of one polarity is surrounded by a side busbar 12 of another polarity. The top busbar 11 includes a first top busbar 111 and a second top busbar 112. The first top busbar 111 and the second top busbar 112 are stacked, and a gap is left between the first top busbar 111 and the second top busbar 112.
[0052] In this embodiment, the first top busbar 111 and the second top busbar 112 are arranged in parallel, and the first top busbar 111 and the second top busbar 112 adopt the same shape design, both being rectangular.
[0053] In the above structure, a gap is left between the first top busbar 111 and the second top busbar 112 stacked together, so that the first top busbar 111 and the second top busbar 112 stacked together are arranged close to each other. This can greatly reduce the stacking distance between the first top busbar 111 and the second top busbar 112, thereby better reducing the parasitic inductance of the low inductance bus capacitor and more effectively avoiding excessively high peak voltage.
[0054] Example 3 See Figures 2 to 6 Based on the above embodiment two, the difference between this embodiment and embodiment two is that the busbar structure in this embodiment includes: Top busbar 11 is configured as a double-layer stacked structure; Side busbar 12, there are multiple side busbars 12, multiple side busbars 12 are arranged in parallel on top busbar 11, and the polarities of adjacent side busbars 12 are opposite, one side busbar 12 of one polarity is surrounded by a side busbar 12 of another polarity. Among them, one of the adjacent side busbars 12 is connected to the first top busbar 111, and the other of the adjacent side busbars 12 is connected to the second top busbar 112; specifically, as shown in the figure Figure 4 As shown, multiple side busbars 12 are alternately connected to the first top busbar 111 and the second top busbar 112.
[0055] In the above structure, multiple side busbars 12 are staggered to the first top busbar 111 and the second top busbar 112, which allows the multiple side busbars 12 to conduct the heat generated inside the core to the first top busbar 111 and the second top busbar 112 more evenly. This makes full use of the first top busbar 111 and the second top busbar 112, and is more conducive to the top busbar 11 to diffuse heat outward, thereby further improving the heat dissipation capacity and heat dissipation efficiency.
[0056] Furthermore, in this embodiment, the first top busbar 111 and the second top busbar 112 are provided with corresponding connection holes for a plurality of side busbars 12.
[0057] In the above structure, the connection holes provided on the first top busbar 111 and the second top busbar 112 can facilitate the connection of multiple side busbars 12 with the first top busbar 111 and the second top busbar 112, which facilitates the manufacturing and processing of the busbars.
[0058] Example 4 See Figures 2 to 6 Based on any of the embodiments one to three above, the difference between this embodiment and any of the embodiments one to three is that the busbar structure of this embodiment includes: Top busbar 11 is configured as a double-layer stacked structure; Side busbar 12, there are multiple side busbars 12, multiple side busbars 12 are arranged in parallel on top busbar 11, and the polarities of adjacent side busbars 12 are opposite, one side busbar 12 of one polarity is surrounded by a side busbar 12 of another polarity. Among them, the side busbar 12 has a flow-through hole 122 at the position corresponding to the core.
[0059] In this embodiment, a flow-through hole 122 is provided on each side busbar 12 at the position corresponding to the core. For example, three flow-through holes 122 are provided on each side busbar 12 at the position corresponding to the core. The three flow-through holes 122 are located at the middle position and both ends of each side busbar 12.
[0060] In the above structure, a flow-through hole 122 is opened on the side busbar 12 at the position corresponding to the core, which can help reduce the parasitic inductance of the low-inductance bus capacitor, making the parasitic inductance of the low-inductance bus capacitor even lower.
[0061] Example 5 See Figures 2 to 6 This application provides a low-inductance bus capacitor, including a capacitor core 13 and a busbar structure of any one of the above embodiments one to four, wherein the capacitor core 13 is disposed between adjacent side busbars 12.
[0062] The low-inductance bus capacitor in this application adopts the busbar structure of any one of the embodiments one to four above, which can effectively improve the heat dissipation capacity and efficiency of the low-inductance bus capacitor, reduce the temperature rise of the low-inductance bus capacitor, improve the working capacity of the low-inductance bus capacitor under high power conditions and the ability to absorb large ripple current, and also reduce the parasitic inductance of the low-inductance bus capacitor, effectively avoiding excessively high peak voltage; in addition, the magnetic circuit coupling of the low-inductance bus capacitor has a very reasonable and scientific structural design, which can fully guarantee the stability and reliability of the low-inductance bus capacitor.
[0063] Example 6 See Figures 2 to 6 This application provides a power electronic system including the low-inductance bus capacitor of Embodiment 5 above.
[0064] The power electronic system of this application embodiment uses the low-inductance bus capacitor of Embodiment 5 above. The temperature rise of the low-inductance bus capacitor is reduced, which can greatly reduce the situation where the low-inductance bus capacitor is prone to failure due to excessive temperature rise in high-power application scenarios in power electronic systems. In addition, the low-inductance bus capacitor has low parasitic inductance, which is less likely to cause voltage spikes caused by circuit parasitic inductance under the high switching speed of power devices. It can effectively avoid excessively high peak voltage, effectively protect power devices, better adapt to the high requirements of power devices for low-inductance bus capacitors, and improve the stability and reliability of power electronic systems.
[0065] In all the above embodiments, "large" and "small" are relative terms, "more" and "less" are relative terms, and "upper" and "lower" are relative terms. The embodiments of this application will not elaborate further on the expression of such relative terms.
[0066] It should be understood that phrases such as "in one embodiment," "in this embodiment," "in this application embodiment," or "as an optional implementation" throughout the specification mean that a specific feature, structure, or characteristic related to an embodiment is included in at least one embodiment of this application. Therefore, phrases such as "in one embodiment," "in this embodiment," "in this application embodiment," or "as an optional implementation" appearing throughout the specification do not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Those skilled in the art should also understand that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily essential to this application.
[0067] In the various embodiments of this application, it should be understood that the sequence number of each process does not necessarily imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.
[0068] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of protection of the claims.
Claims
1. A busbar structure, characterized in that, Applied to busbar capacitors, the busbar structure includes: Top busbar, wherein the top busbar is configured with a double-layer stacked structure; Side busbars, there are multiple side busbars, the multiple side busbars are arranged in parallel on the top busbar, and the polarities of adjacent side busbars are opposite, and one side busbar of one polarity is surrounded by a side busbar of another polarity.
2. The busbar structure according to claim 1, characterized in that, The top busbar includes a first top busbar and a second top busbar. The first top busbar and the second top busbar are stacked, and a gap is left between the first top busbar and the second top busbar.
3. The busbar structure according to claim 1, characterized in that, The side busbar located in the middle position outside the two ends of the plurality of side busbars is configured as a double-layer stacked structure, and the polarity of the two unit busbars in a single double-layer stacked structure side busbar is the same.
4. A busbar structure according to claim 3, characterized in that, In the double-layer stacked structure of the side busbar, there is a gap between the two unit busbars.
5. A busbar structure according to claim 2, characterized in that, One of the adjacent side busbars is connected to the first top busbar, and the other of the adjacent side busbars is connected to the second top busbar.
6. A busbar structure according to claim 5, characterized in that, The first top busbar and the second top busbar are provided with corresponding connection holes for the side busbars.
7. A busbar structure according to any one of claims 1-6, characterized in that, Five side busbars are provided, and four core mounting positions are formed by adjacent side busbars among the five side busbars.
8. A busbar structure according to any one of claims 1-6, characterized in that, A flow-through hole is provided on the side busbar at the position corresponding to the core.
9. A low-inductance bus capacitor, characterized in that, It includes a capacitor core and a busbar structure as described in any one of claims 1-8, wherein the capacitor core is disposed between adjacent side busbars.
10. A power electronic system, characterized in that, This includes the low-inductance bus capacitor as described in claim 9.