Light-emitting substrate and display device

Abstract

The invention relates to the technical field of display, and provides a light-emitting substrate and a display device.The light-emitting substrate comprises a substrate body, a first conductive layer, a first inorganic passivation layer and a plurality of bonding pads, and the first conductive layer comprises a first connecting part; the first inorganic passivation layer is located on the side, away from the substrate, of the first conductive layer, a first through hole is formed in the first inorganic passivation layer, and the orthographic projection of the first through hole on the substrate and the orthographic projection of the first connecting part on the substrate are at least partially overlapped; the bonding pad comprises a via hole connecting part and a welding part which are connected, the welding part is located on the side, away from the substrate, of the first inorganic passivation layer, and the via hole connecting part penetrates through the first through hole to be connected with the first connecting part; wherein the first through hole comprises an opening deviating from one side of the substrate, the welding part covers the opening, and the edge of the orthographic projection of the welding part on the substrate and the edge of the orthographic projection of the opening on the substrate form an annular structure. The light-emitting substrate has good structural stability.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and more particularly to a light-emitting substrate and a display device. Background Technology

[0002] In related technologies, during reliability testing of light-emitting substrates, bulging is prone to occur around the pads, which affects product quality.

[0003] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0004] According to one aspect of this disclosure, a light-emitting substrate is provided, wherein the light-emitting substrate comprises:

[0005] Substrate;

[0006] A first conductive layer is located on one side of the substrate, and the first conductive layer includes a first connection portion;

[0007] A first inorganic passivation layer is located on the side of the first conductive layer away from the substrate. A first through-hole is formed on the first inorganic passivation layer. The orthographic projection of the first through-hole on the substrate and the orthographic projection of the first connecting portion on the substrate at least partially overlap.

[0008] Multiple pads, each pad including a connected via connection portion and a solder portion, the solder portion being located on the side of the first inorganic passivation layer away from the substrate, the via connection portion being disposed through the first through hole to connect with the first connection portion;

[0009] The first through hole includes an opening on the side opposite to the substrate, the solder part covers the opening, and the edge of the orthographic projection of the solder part on the substrate and the edge of the orthographic projection of the opening on the substrate form an annular structure.

[0010] In an exemplary embodiment of this disclosure, the welding portion includes a body portion and an annular epitaxial portion. The annular epitaxial portion is disposed around the body portion. The orthographic projection of the body portion on the substrate coincides with the orthographic projection of the opening on the substrate. The orthographic projection of the annular epitaxial portion on the substrate coincides with the annular structure.

[0011] The annular epitaxial portion and the side of the first inorganic passivation layer facing away from the substrate are bonded together.

[0012] In one exemplary embodiment of this disclosure, the width of the annular structure is greater than or equal to 2 μm and less than or equal to 6 μm.

[0013] In one exemplary embodiment of this disclosure, the height of the via connection portion in the direction perpendicular to the substrate is greater than or equal to 2000 angstroms and less than or equal to 10000 angstroms.

[0014] In one exemplary embodiment of this disclosure, the geometric diameter of the orthographic projection of the via connection portion on the substrate is d1, the height of the via connection portion in the direction perpendicular to the substrate is h1, and d1 / h1 is greater than or equal to 3 and less than or equal to 500.

[0015] In one exemplary embodiment of this disclosure, the ratio of the thickness of the welded portion in the direction perpendicular to the substrate to the thickness of the pad in the direction perpendicular to the substrate is greater than or equal to 1 / 4 and less than or equal to 3 / 4.

[0016] In one exemplary embodiment of this disclosure, the via connection portion fills the first through hole, and the via connection portion includes a first sidewall opposite to the inner wall of the first through hole, wherein the angle formed between the first sidewall and the substrate is greater than or equal to 90° and less than or equal to 130°.

[0017] In one exemplary embodiment of this disclosure, the welding portion includes a main body and an anti-oxidation layer. The main body and the through-hole connection portion are connected. The anti-oxidation layer covers the end face of the main body away from the first inorganic passivation layer and covers the side face of the main body connected to the end face.

[0018] In one exemplary embodiment of this disclosure, the materials of the via connection portion and the main body portion include nickel, and the material of the anti-oxidation layer includes gold.

[0019] In an exemplary embodiment of this disclosure, the material of the first inorganic passivation layer includes one or more of silicon oxide, silicon nitride, and aluminum oxide;

[0020] And / or, the material of the first conductive layer includes copper.

[0021] In one exemplary embodiment of this disclosure, the light-emitting substrate further includes:

[0022] A second conductive layer is located between the substrate and the first conductive layer, and at least a portion of the structure of the second conductive layer and at least a portion of the structure of the first conductive layer are connected by vias.

[0023] In one exemplary embodiment of this disclosure, the light-emitting substrate further includes:

[0024] The second inorganic passivation layer is located between the first inorganic passivation layer and the first conductive layer;

[0025] The first organic layer is located between the second inorganic passivation layer and the first inorganic passivation layer;

[0026] A second through hole is formed on the second inorganic passivation layer and the first organic layer, and the through hole connection portion is disposed through the second through hole to connect with the first connection portion.

[0027] In one exemplary embodiment of this disclosure, the ratio of the thickness of the second inorganic passivation layer to the thickness of the first organic layer is greater than or equal to 1 / 10 and less than or equal to 1.

[0028] In one exemplary embodiment of this disclosure, the light-emitting substrate is used to form a backlight module, or the light-emitting substrate is used to form a display panel.

[0029] In one exemplary embodiment of this disclosure, the light-emitting substrate further includes a light-emitting chip and a driving chip. The driving chip is used to drive the light-emitting chip to emit light, and some of the pads are used to solder to the light-emitting chip, while some of the pads are used to solder to the driving chip.

[0030] Alternatively, the light-emitting substrate may further include a light-emitting chip, and the pads are used for soldering to the light-emitting chip.

[0031] According to one aspect of this disclosure, a method for fabricating a light-emitting substrate is provided, wherein the method includes:

[0032] Provide a substrate;

[0033] A conductive material layer is formed on the substrate, and the conductive material layer is etched to form a first conductive layer, the first conductive layer including a first connection portion;

[0034] An inorganic passivation material layer is formed on the side of the first conductive layer away from the substrate. The inorganic passivation material layer is etched to form a first inorganic passivation layer. A first through-hole is formed on the first inorganic passivation layer so that at least a portion of the structure of the first connection portion is exposed outside the inorganic passivation material layer.

[0035] The first connection portion exposed outside the inorganic passivation material layer is activated to form an activation layer on the side of the first connection portion away from the substrate.

[0036] A metal structure is grown on the side of the activation layer away from the substrate to form a pad. The pad includes a connected via connection portion and a solder portion. The solder portion is located on the side of the first inorganic passivation layer away from the substrate. The via connection portion is disposed through the first through hole to connect with the first connection portion.

[0037] The first through hole includes an opening on the side opposite to the substrate, the solder part covers the opening, and the edge of the orthographic projection of the solder part on the substrate and the edge of the orthographic projection of the opening on the substrate form an annular structure.

[0038] According to one aspect of this disclosure, a display device is provided, wherein the display device includes the above-described light-emitting substrate.

[0039] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0040] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0041] Figure 1 This is a schematic diagram of the structure of a backlight module in related technologies;

[0042] Figure 2 Electron microscope image of a backlight module in a related technology;

[0043] Figure 3 This is a schematic diagram of the structure of an exemplary embodiment of the light-emitting substrate disclosed herein;

[0044] Figure 4 This is an electron microscope image of an exemplary embodiment of the light-emitting substrate disclosed herein;

[0045] Figure 5 This is a partial top view of an exemplary embodiment of the light-emitting substrate disclosed herein;

[0046] Figure 6 This is a partial top view of an exemplary embodiment of the light-emitting substrate disclosed herein;

[0047] Figure 7 This is a schematic diagram of the structure of another exemplary embodiment of the light-emitting substrate disclosed herein;

[0048] Figure 8 This is a schematic diagram of another exemplary embodiment of the light-emitting substrate disclosed herein. Detailed Implementation

[0049] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, they are provided so that this disclosure will be more comprehensive and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore their detailed description will be omitted.

[0050] The terms “a,” “one,” and “the” are used to indicate the existence of one or more elements / components / etc.; the terms “including” and “having” are used to indicate an open-ended meaning of inclusion and that there may be other elements / components / etc. in addition to the listed elements / components / etc.

[0051] In the description of this disclosure, unless otherwise expressly specified and limited, the terms “first” and “second” are used for descriptive purposes only and should not be construed as indicating or implying relative importance; the term “multiple” refers to two or more; and the term “and / or” includes any and all combinations of one or more associated listed items. In particular, references to “the / described” object or “a” object are also intended to indicate one of a possible plurality of such objects.

[0052] Unless otherwise specified or stated, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, an integral connection, an electrical connection, or a signal connection; "connection" can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0053] Furthermore, it should be understood that the directional terms such as "upper," "lower," "inner," and "outer" described in the exemplary embodiments of this disclosure are used to describe the angles shown in the accompanying drawings and should not be construed as limiting the exemplary embodiments of this disclosure. It should also be understood that, in the context of an element or feature being connected to one or more "upper," "lower," "inner," or "outer" elements, it can be directly connected to one or more "upper," "lower," "inner," or "outer" elements, or indirectly connected to one or more "upper," "lower," "inner," or "outer" elements through intermediate elements.

[0054] like Figure 1The diagram shows a schematic of a backlight module in the related technology. The backlight module includes a substrate 100, a fifth inorganic passivation layer PVX5, a second conductive layer 12, a third inorganic passivation layer PVX3, a second organic layer OC2, a fourth inorganic passivation layer PVX4, a first conductive layer, a first inorganic passivation layer PVX1, and a first organic layer OC1, stacked sequentially. The first conductive layer includes a first connection portion 11. Through-holes H are formed on the first inorganic passivation layer PVX1 and the first organic layer OC1 to expose at least a portion of the first connection portion 11 outside the first inorganic passivation layer PVX1 and the first organic layer OC1. The backlight module also includes a pad 2 located within the through-hole H. The pad 2 is connected to the first connection portion 11 and is used to solder an LED chip or a driver chip IC, which drives the LED chip to emit light.

[0055] However, as Figure 1 As shown, due to the poor adhesion between pad 2 and the organic material, a large crack forms between pad 2 and the first organic layer OC1. Under the tension of this crack, cracks also form between the first inorganic passivation layer PVX1 and pad 2. Figure 2 The image shown is an electron microscope (EM) image of a backlight module in a related technology. According to... Figure 2 It is evident that the first inorganic passivation layer PVX1, the first organic layer OC1, and the pad 2 all have cracks. When soldering pad 2 to the LED chip or driver chip IC using solder paste 9, the solder paste 9 can enter the first conductive layer through the cracks between pad 2 and the first organic layer OC1, as well as the cracks between the first inorganic passivation layer PVX1 and the pad 2. The solder paste 9 will react with the first conductive layer, causing bulging around the pad 2, which in turn affects product performance.

[0056] Based on this, this exemplary embodiment provides a light-emitting substrate, such as... Figure 3The diagram shown is a schematic representation of an exemplary embodiment of the light-emitting substrate disclosed herein. The light-emitting substrate may include: a substrate 100, a first conductive layer, a first inorganic passivation layer PVX1, and a plurality of pads 2. The first conductive layer is located on one side of the substrate 100 and includes a first connecting portion 11. The first inorganic passivation layer PVX1 is located on the side of the first conductive layer away from the substrate 100. A first through-hole H1 is formed on the first inorganic passivation layer PVX1. The orthographic projection of the first through-hole H1 on the substrate and the orthographic projection of the first connecting portion 11 on the substrate at least partially overlap. The pad 2 includes a via connection portion 21 and a solder portion 22 connected to each other. The solder portion 22 is located on the side of the first inorganic passivation layer PVX1 away from the substrate 100. The via connection portion 21 is disposed through the first through-hole H1 to connect with the first connecting portion 11. The first through-hole H1 includes an opening H11 on the side away from the substrate. The solder portion 22 covers the opening H11, and the edge of the orthographic projection of the solder portion 22 on the substrate 100 and the edge of the orthographic projection of the opening H11 on the substrate 100 form an annular structure.

[0057] On the one hand, this exemplary embodiment removes the first organic layer in the related technology, and the pad 2 is directly formed on the side of the first inorganic passivation layer PVX1 away from the substrate 100. Since the inorganic passivation layer and the pad 2 have a good bonding degree, no cracks will be generated between the first inorganic passivation layer PVX1 and the pad 2. Thus, this exemplary embodiment can reduce the risk of solder paste flowing into the first conductive layer. On the other hand, this exemplary embodiment removes the first organic layer, so that the depth of the first via H1 is smaller. When the pad 2 is formed by the gold plating process, the pad material can grow more easily outside the first via H1. The pad material grown outside the first via H1 can expand outward in a direction parallel to the substrate 100 to form a "mushroom" structure pad. Thus, the soldering part 22 will not only cover the opening H11, but also cover part of the first inorganic passivation layer PVX1 around the opening H11. Thus, the soldering part 22 can further reduce the risk of solder paste flowing into the first conductive layer.

[0058] In this exemplary embodiment, as Figure 4 The image shown is an electron microscope (EM) image of an exemplary embodiment of the light-emitting substrate of this disclosure. According to... Figure 4 As can be seen, in this exemplary embodiment, the pad 2 and the first inorganic passivation layer PVX1 are tightly bonded, and the solder paste cannot enter the first conductive layer.

[0059] In this exemplary embodiment, the light-emitting substrate can be used in an environment of 85°C and 85% humidity. After the module process is completed, the sample can run continuously for at least 1500 hours without lamp failure or other corrosion problems.

[0060] In this exemplary embodiment, the light-emitting substrate can be used to form a backlight module, which can be used in an LCD display panel. For example... Figure 5 , 6 As shown, Figure 5 This is a partial top view of an exemplary embodiment of the light-emitting substrate disclosed herein. Figure 6 This is a partial top view of an exemplary embodiment of the light-emitting substrate disclosed herein. The light-emitting substrate may further include a light-emitting chip (LED) and a driver chip (IC), the driver chip IC being used to drive the LED to emit light. In this exemplary embodiment, some pads 2 can be used for soldering to the LED, and some pads 2 can be used for soldering to the driver chip IC.

[0061] In this exemplary embodiment, as Figure 7 The diagram shown is a structural schematic of another exemplary embodiment of the light-emitting substrate of this disclosure. The light-emitting substrate may further include a second conductive layer 12, located between the substrate 100 and the first conductive layer. At least a portion of the structure of the second conductive layer 12 and at least a portion of the structure of the first conductive layer are connected via vias. A portion of the structure of the second conductive layer can be used to form multiple signal lines. For example, the multiple signal lines may include power lines and data lines. The data lines can be used to provide data signals to the driver chip IC, and the power lines can be used to provide high / low power signals to the light-emitting chip LED or the driver chip IC. A portion of the first connection portion 11 can bridge between the signal lines located in the second conductive layer and the pads 2.

[0062] In this exemplary embodiment, as Figure 7 As shown, the light-emitting substrate may further include: a fifth inorganic passivation layer PVX5, a third inorganic passivation layer PVX3, a second organic layer OC2, and a fourth inorganic passivation layer PVX4. The substrate 100, the fifth inorganic passivation layer PVX5, the second conductive layer 12, the third inorganic passivation layer PVX3, the second organic layer OC2, the fourth inorganic passivation layer PVX4, the first conductive layer, and the first inorganic passivation layer PVX1 are sequentially stacked.

[0063] Figure 7 The light-emitting substrate shown adopts a double conductive layer architecture, with the signal line disposed in the second conductive layer. It should be understood that in other exemplary embodiments, the light-emitting substrate may also adopt a single conductive layer architecture, and the signal line may also be located in the first conductive layer.

[0064] In this exemplary embodiment, as Figure 8The diagram shown is a structural schematic of another exemplary embodiment of the light-emitting substrate disclosed herein. The light-emitting substrate may further include: a second inorganic passivation layer PVX2 and a first organic layer OC1, wherein the second inorganic passivation layer PVX2 is located between the first inorganic passivation layer PVX1 and the first conductive layer; the first organic layer OC1 is located between the second inorganic passivation layer PVX2 and the first inorganic passivation layer PVX1; wherein a second through-hole H2 is formed on the second inorganic passivation layer PVX2 and the first organic layer OC1, and a through-hole connection portion 21 is disposed through the second through-hole H2 to connect with the first connection portion 11. Relative to... Figure 1 As shown in the related technology, this exemplary embodiment adds a first inorganic passivation layer PVX1 between the first organic layer OC1 and the solder portion 22. The first inorganic passivation layer PVX1 and the solder pad 2 have good adhesion, which can also reduce the risk of solder paste entering the first conductive layer. In addition, the first organic layer OC1 has a planarization effect, thereby improving the flatness of the light-emitting substrate.

[0065] In this exemplary embodiment, as Figure 8 As shown, the first organic layer OC1 can be thinned to facilitate the formation of the "mushroom" structure pads via a metallization process. The ratio of the thickness of the second inorganic passivation layer PVX2 to the thickness of the first organic layer OC1 is greater than or equal to 1 / 10 and less than or equal to 1. For example, the ratio of the thickness of the second inorganic passivation layer PVX2 to the thickness of the first organic layer OC1 can be 1 / 10, 2 / 10, 3 / 10, 4 / 10, 5 / 10, 6 / 10, 7 / 10, 8 / 10, 9 / 10, 1, etc. The thickness of the first organic layer OC1 can be less than or equal to 2 μm; for example, the thickness of the first organic layer OC1 can be 0.5 μm, 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm, 2 μm, etc.

[0066] It should be noted that, Figure 8 The light-emitting substrate shown can also be used Figure 7 The diagram shows a dual-conductive-layer architecture. That is... Figure 8 The light-emitting substrate shown may include a substrate 100, a fifth inorganic passivation layer PVX5, a second conductive layer 12, a third inorganic passivation layer PVX3, a second organic layer OC2, a fourth inorganic passivation layer PVX4, a first conductive layer, a second inorganic passivation layer PVX2, a first organic layer OC1, and a first inorganic passivation layer PVX1, which are stacked sequentially.

[0067] In this exemplary embodiment, as Figure 3 , 7As shown in Figure 8, the substrate 100 can be a glass substrate. It should be understood that in other exemplary embodiments, the substrate 100 can also be a PCB substrate, and the material of the PCB substrate can include one or more of phenolic resin, epoxy resin, polyimide, polytetrafluoroethylene, polyphenylene ether, polyester, and polycarbonate.

[0068] In this exemplary embodiment, the material of the first conductive layer includes copper, which readily reacts with solder paste. It should be understood that the material of the first conductive layer can also be other metallic materials. In this exemplary embodiment, the materials of the first inorganic passivation layer PVX1, the second inorganic passivation layer PVX2, the third inorganic passivation layer PVX3, the fourth inorganic passivation layer PVX4, and the fifth inorganic passivation layer PVX5 can include one or more of silicon oxide, silicon nitride, and aluminum oxide. The inorganic passivation layer PVX has an insulating effect.

[0069] In this exemplary embodiment, as Figure 3 , 7 As shown in Figure 8, the welding part 22 may further include a main body 221 and an anti-oxidation layer 222. The main body 221 is connected to the via connection part 21. The anti-oxidation layer 222 covers the end face 2211 of the main body 221 that is away from the first inorganic passivation layer PVX1, and covers the side face 2212 of the main body 221 that is connected to the end face 2211. That is, the anti-oxidation layer 222 covers the surface of the main body that is exposed outside the first inorganic passivation layer PVX1, and the anti-oxidation layer 222 can prevent the main body 221 from being oxidized. The thickness of the anti-oxidation layer 222 can be 30nm-70nm, for example, the thickness of the anti-oxidation layer 222 can be equal to 30nm, 40nm, 50nm, 60nm, 70nm, etc.

[0070] In this exemplary embodiment, the materials of the via connection portion 21 and the main body portion 221 may include nickel, and the material of the anti-oxidation layer 222 may include gold. It should be understood that in other exemplary embodiments, the materials of the via connection portion 21 and the main body portion 221 may also include copper, tin, etc., and the material of the anti-oxidation layer 222 may also include zinc, silver, etc.

[0071] In this exemplary embodiment, as Figure 3 , 7 As shown in Figure 8, the soldering portion 22 includes a body portion 223 and an annular epitaxial portion 224. The annular epitaxial portion 224 is disposed around the body portion 223. The orthographic projection of the body portion 223 on the substrate coincides with the orthographic projection of the opening H11 on the substrate, and the orthographic projection of the annular epitaxial portion 224 on the substrate coincides with the annular structure. The annular epitaxial portion 224 is attached to the side of the first inorganic passivation layer PVX1 facing away from the substrate. This arrangement can reduce the risk of solder paste entering the first conductive layer.

[0072] In this exemplary embodiment, as Figure 3 , 7 As shown in Figure 8, the width d2 of the annular structure is greater than or equal to 2 μm and less than or equal to 6 μm. For example, the width d2 of the annular structure can be equal to 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, etc. If the width d2 of the annular structure is too small, the sealing effect of the annular epitaxial portion 224 on the opening H11 is poor; if the width d2 of the annular structure is too large, the size of the pads is large, the cost of the light-emitting substrate is high, and adjacent pads 2 are prone to short circuit. This exemplary embodiment sets the width d2 of the annular structure to a suitable size, which can ensure the sealing effect of the annular epitaxial portion 224 on the opening H11, while also saving costs and improving the structural stability of the light-emitting substrate.

[0073] In this exemplary embodiment, as Figure 3 , 7 As shown in Figures 8 and 9, the materials of the first organic layer OC1 and the second organic layer OC2 may include one or more of polyester organic materials, epoxy resin, and silicone.

[0074] In this exemplary embodiment, both the first conductive layer and the second conductive layer may be provided with a protective layer. For example, such as Figure 3 , 7 As shown in Figure 8, a first protective layer 51 can be disposed on the side of the first conductive layer facing the substrate, a second protective layer 52 can be disposed on the side of the first conductive layer away from the substrate, a third protective layer 53 can be disposed on the side of the second conductive layer facing the substrate, and a fourth protective layer 54 can be disposed on the side of the second conductive layer away from the substrate. The protective layer is removed from the position of the first connecting portion 11 where it connects to the pad 2. The protective layer can be a MoNb layer or a molybdenum-titanium-nickel (MTD) layer. The protective layer has an anti-oxidation function and can be used to prevent the first and second conductive layers from being oxidized. The protective layers on both sides of the first conductive layer can be etched together with the first conductive layer in a single etching process, and the protective layers on both sides of the second conductive layer can be etched together with the second conductive layer in a single etching process.

[0075] In this exemplary embodiment, the method for fabricating a light-emitting substrate may include: providing a substrate 100; forming a conductive material layer on the substrate; etching the conductive material layer to form a first conductive layer, the first conductive layer including a first connection portion 11; forming an inorganic passivation material layer on the side of the first conductive layer away from the substrate; etching the inorganic passivation material layer to form a first through-hole H1 on the inorganic passivation material layer, so that at least a portion of the structure of the first connection portion 11 is exposed outside the inorganic passivation material layer.

[0076] In this exemplary embodiment, as Figure 3 , 7As shown in Figure 8, the pad 2 can be formed by an electrochemical self-growth process. The electrochemical self-growth process may include: firstly, cleaning the first connection portion 11 exposed outside the inorganic passivation material layer, for example, by cleaning the first connection portion 11 with an acid solution or alkaline solution to remove dirt from the first connection portion 11; then, micro-etching the first connection portion 11 exposed outside the inorganic passivation material layer to increase the surface roughness and activity of the first connection portion 11 exposed outside the inorganic passivation material layer, so that the first connection portion 11 and the subsequent activation layer can adhere; then, activating the first connection portion 11 exposed outside the inorganic passivation material layer, for example, immersing the first connection portion 11 in an activation solution (e.g., palladium salt solution), thereby forming a layer on the surface of the first connection portion 11. An activation layer (e.g., a palladium layer) is formed; then the first connecting part 11 can be immersed in a nickel plating solution. Palladium acts as a catalyst for gold, reducing nickel ions to elemental nickel and adhering to the surface of the first connecting part. Since the depth of the first through hole H1 is small, the nickel layer generated inside the first through hole H1 extends outward along a direction parallel to the substrate after exceeding the opening H11, forming an annular epitaxial part 224. The nickel structure located inside the first through hole H1 can form a through hole connecting part 21, and the nickel structure located outside the opening H11 can form the main body 221 of the welding part. Finally, the first connecting part 11 can be immersed in a gold plating solution. Nickel will reduce gold ions to elemental gold and adhering to the surface of the nickel layer, and the gold layer can form an anti-oxidation layer.

[0077] It should be noted that, based on the above-described process, the shape of the orthographic projection (ring structure) of the annular epitaxial portion 224 onto the substrate is related to the shape of the opening H11. The ring structure can be circular, rectangular, elliptical, or other shapes. Furthermore, the width of the ring structure at various locations can be the same or slightly different.

[0078] In this exemplary embodiment, as Figure 3 , 7 As shown in Figure 8, the height h1 of the via connection portion 21 in the direction perpendicular to the substrate 100 is greater than or equal to 2000 angstroms and less than or equal to 10000 angstroms. For example, the height h1 of the via connection portion 21 in the direction perpendicular to the substrate 100 can be equal to 2000 angstroms, 3000 angstroms, 4000 angstroms, 5000 angstroms, 6000 angstroms, 7000 angstroms, 8000 angstroms, 9000 angstroms, 10000 angstroms, etc. If h1 is too small, the first inorganic passivation layer PVX1 will be too thin, and the insulation effect of the first inorganic passivation layer PVX1 will be poor. If h1 is too large, the nickel will not easily extend beyond the opening H11 during nickel plating, making it difficult to form the annular epitaxial portion 224. At the same time, if h1 is too large, the via connection portion 21 is also prone to breakage. This exemplary embodiment sets h1 to a suitable size, which can facilitate the formation of the "mushroom" structure of the pads and improve the structural stability of the via connection portion 21.

[0079] In this exemplary embodiment, as Figure 3 , 7 As shown in Figure 8, the geometric diameter of the orthographic projection of the via connection portion 21 on the substrate 100 is d1, and the height of the via connection portion 21 in the direction perpendicular to the substrate is h1. d1 / h1 is greater than or equal to 3 and less than or equal to 500. For example, d1 / h1 can be equal to 3, 10, 20, 40, 60, 80, 100, 200, 300, 400, 500, etc. The geometric diameter of the orthographic projection of the via connection portion 21 on the substrate 100 is the diameter of the smallest circumcircle of the orthographic projection of the via connection portion 21 on the substrate 100.

[0080] In this exemplary embodiment, as Figure 3 , 7 As shown in Figure 8, the ratio of the thickness h2 of the solder portion 22 in the direction perpendicular to the substrate 100 to the thickness h1+h2 of the pad 2 in the direction perpendicular to the substrate is greater than or equal to 1 / 4 and less than or equal to 3 / 4. For example, h2 / (h1+h2) can be equal to 1 / 4, 2 / 4, 3 / 4, etc. h2 can be equal to 1μm, 1.2μm, 1.4μm, 1.6μm, 1.8μm, 2μm, etc.

[0081] In this exemplary embodiment, as Figure 3 , 7 As shown in Figure 8, the via connection portion 21 is filled in the first through hole H1. The via connection portion 21 includes a first sidewall 211 opposite to the inner wall of the first through hole H1. The angle β formed between the first sidewall 211 and the substrate 100 is greater than 90° and less than or equal to 130°. For example, β can be equal to 92°, 95°, 98°, 100°, 105°, 110°, 115°, 120°, 125°, 130°, etc.

[0082] It should be understood that the aforementioned light-emitting substrate can also be used to form a display panel. The pads on the light-emitting substrate can be used to bond light-emitting chips, which can be used to directly display images.

[0083] This exemplary embodiment also provides a method for manufacturing a light-emitting substrate, wherein the manufacturing method includes:

[0084] Provide a substrate;

[0085] A conductive material layer is formed on a substrate, and the conductive material layer is etched to form a first conductive layer, the first conductive layer including a first connection portion;

[0086] An inorganic passivation material layer is formed on the side of the first conductive layer away from the substrate. The inorganic passivation material layer is etched to form a first inorganic passivation layer. A first through-hole is formed on the first inorganic passivation layer so that at least a portion of the structure of the first connection portion is exposed outside the inorganic passivation material layer.

[0087] The first connection portion exposed outside the inorganic passivation material layer is activated to form an activation layer on the side of the first connection portion away from the substrate.

[0088] A metal structure is grown on the side of the activation layer away from the substrate to form a pad. The pad includes a via connection portion and a solder portion connected together. The solder portion is located on the side of the first inorganic passivation layer away from the substrate. The via connection portion is provided through the first through hole to connect with the first connection portion.

[0089] The first through hole includes an opening on the side away from the substrate, the welding part covers the opening, and the edge of the orthogonal projection of the welding part on the substrate and the edge of the orthogonal projection of the opening on the substrate form a ring structure.

[0090] The method for fabricating the light-emitting substrate can form the aforementioned light-emitting substrate.

[0091] It should be noted that the scale of the accompanying drawings in this disclosure can be used as a reference in actual manufacturing processes, but is not limited thereto. For example, the aspect ratio of the channels, the thickness and spacing of each film layer, and the width and spacing of each signal line can be adjusted according to actual needs. The number of pixels in the display substrate and the number of sub-pixels in each pixel are not limited to the quantities shown in the figures. The accompanying drawings described in this disclosure are merely schematic diagrams of the structure. Furthermore, the qualifiers such as "first" and "second" are only used to define different structural names and do not imply a specific order.

[0092] This exemplary embodiment also provides a display device, which includes the above-described light-emitting substrate. The display device can be a mobile phone, tablet computer, television, or other display device.

[0093] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the claims.

[0094] It should be understood that this disclosure is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this disclosure is defined only by the appended claims.

Claims

1. A light-emitting substrate, wherein, The light-emitting substrate includes: Substrate; A first conductive layer is located on one side of the substrate, and the first conductive layer includes a first connection portion; A first inorganic passivation layer is located on the side of the first conductive layer away from the substrate. A first through-hole is formed on the first inorganic passivation layer. The orthographic projection of the first through-hole on the substrate and the orthographic projection of the first connecting portion on the substrate at least partially overlap. Multiple pads, each pad including a connected via connection portion and a solder portion, the solder portion being located on the side of the first inorganic passivation layer away from the substrate, the via connection portion being disposed through the first through hole to connect with the first connection portion; The first through hole includes an opening on the side opposite to the substrate, the solder part covers the opening, and the edge of the orthographic projection of the solder part on the substrate and the edge of the orthographic projection of the opening on the substrate form an annular structure.

2. The light-emitting substrate according to claim 1, wherein, The welding portion includes a body portion and an annular epitaxial portion. The annular epitaxial portion is disposed around the body portion. The orthographic projection of the body portion on the substrate coincides with the orthographic projection of the opening on the substrate. The orthographic projection of the annular epitaxial portion on the substrate coincides with the annular structure. The annular epitaxial portion and the side of the first inorganic passivation layer facing away from the substrate are bonded together.

3. The light-emitting substrate according to claim 1, wherein, The width of the ring structure is greater than or equal to 2 μm and less than or equal to 6 μm.

4. The light-emitting substrate according to claim 1, wherein, The height of the via connection portion in the direction perpendicular to the substrate is greater than or equal to 2000 angstroms and less than or equal to 10000 angstroms.

5. The light-emitting substrate according to claim 1, wherein, The geometric diameter of the orthographic projection of the via connection on the substrate is d1, and the height of the via connection in the direction perpendicular to the substrate is h1, where d1 / h1 is greater than or equal to 3 and less than or equal to 500.

6. The light-emitting substrate according to claim 1, wherein, The ratio of the thickness of the weld portion in the direction perpendicular to the substrate to the thickness of the pad in the direction perpendicular to the substrate is greater than or equal to 1 / 4 and less than or equal to 3 / 4.

7. The light-emitting substrate according to claim 1, wherein, The via connection portion fills the first through hole, and the via connection portion includes a first sidewall opposite to the inner wall of the first through hole. The angle formed between the first sidewall and the substrate is greater than 90° and less than or equal to 130°.

8. The light-emitting substrate according to claim 1, wherein, The welding part includes a main body and an anti-oxidation layer. The main body and the through-hole connection part are connected. The anti-oxidation layer covers the end face of the main body away from the first inorganic passivation layer and covers the side face of the main body connected to the end face.

9. The light-emitting substrate according to claim 8, wherein, The materials of the via connection and the main body include nickel, and the material of the anti-oxidation layer includes gold.

10. The light-emitting substrate according to claim 1, wherein, The material of the first inorganic passivation layer includes one or more of silicon oxide, silicon nitride, and aluminum oxide; And / or, the material of the first conductive layer includes copper.

11. The light-emitting substrate according to claim 1, wherein, The light-emitting substrate further includes: A second conductive layer is located between the substrate and the first conductive layer, and at least a portion of the structure of the second conductive layer and at least a portion of the structure of the first conductive layer are connected by vias.

12. The light-emitting substrate according to any one of claims 1-11, wherein, The light-emitting substrate further includes: The second inorganic passivation layer is located between the first inorganic passivation layer and the first conductive layer; The first organic layer is located between the second inorganic passivation layer and the first inorganic passivation layer; A second through hole is formed on the second inorganic passivation layer and the first organic layer, and the through hole connection portion is disposed through the second through hole to connect with the first connection portion.

13. The light-emitting substrate according to claim 12, wherein, The ratio of the thickness of the second inorganic passivation layer to the thickness of the first organic layer is greater than or equal to 1 / 10 and less than or equal to 1.

14. The light-emitting substrate according to any one of claims 1-11, wherein, The light-emitting substrate is used to form a backlight module, or the light-emitting substrate is used to form a display panel.

15. The light-emitting substrate according to any one of claims 1-11, wherein, The light-emitting substrate further includes a light-emitting chip and a driving chip. The driving chip is used to drive the light-emitting chip to emit light. Some of the pads are used to solder to the light-emitting chip, and some of the pads are used to solder to the driving chip. Alternatively, the light-emitting substrate may further include a light-emitting chip, and the pads are used for soldering to the light-emitting chip.

16. A method for manufacturing a light-emitting substrate, wherein, The manufacturing method includes: Provide a substrate; A conductive material layer is formed on the substrate, and the conductive material layer is etched to form a first conductive layer, the first conductive layer including a first connection portion; An inorganic passivation material layer is formed on the side of the first conductive layer away from the substrate. The inorganic passivation material layer is etched to form a first inorganic passivation layer. A first through-hole is formed on the first inorganic passivation layer so that at least a portion of the structure of the first connection portion is exposed outside the inorganic passivation material layer. The first connection portion exposed outside the inorganic passivation material layer is activated to form an activation layer on the side of the first connection portion away from the substrate. A metal structure is grown on the side of the activation layer away from the substrate to form a pad. The pad includes a connected via connection portion and a solder portion. The solder portion is located on the side of the first inorganic passivation layer away from the substrate. The via connection portion is disposed through the first through hole to connect with the first connection portion. The first through hole includes an opening on the side opposite to the substrate, the solder part covers the opening, and the edge of the orthographic projection of the solder part on the substrate and the edge of the orthographic projection of the opening on the substrate form an annular structure.

17. A display device, wherein, The display device includes the light-emitting substrate according to any one of claims 1-15.

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